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Quan W, Lu Y, Wu Q, Cheng Y, Hu J, Zhang Z, Wang J, Li Z, Wang L, Ji Q, Zhang Y. Substantial Energy Band Modulation of Semiconducting Hexagonal GaTe Quantum Wells by Layer Thickness and Mirror Twin Boundaries. ACS NANO 2024. [PMID: 39074911 DOI: 10.1021/acsnano.4c05858] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/31/2024]
Abstract
Exploring emerging two-dimensional (2D) van der Waals (vdW) semiconducting materials and precisely tuning their electronic properties at the atomic level have long been recognized as crucial issues for developing their high-end electronic and optoelectronic applications. As a III-VI semiconductor, ultrathin layered hexagonal GaTe (h-GaTe) remains unexplored in terms of its intrinsic electronic properties and band engineering strategies. Herein, we report the successful synthesis of ultrathin h-GaTe layers on a selected graphene/SiC(0001) substrate, via molecular beam epitaxy (MBE). The widely tunable quasiparticle band gaps (∼2.60-1.55 eV), as well as the vdW quantum well states (QWSs) that can be strictly counted by the layer numbers, are well characterized by onsite scanning tunneling microscopy/spectroscopy (STM/STS), and their origins are clearly addressed by density functional theory (DFT) calculations. More intriguingly, distinctive 8|8E and 4|4P (Ga) mirror twin boundaries (MTBs) are identified in the ultrathin h-GaTe flakes, which can induce decreased band gaps and prominent p-doping effects. This work should deepen our understanding on the electronic tunability of 2D III-VI semiconductors by thickness control and line defect engineering, which may hold promise for fabricating atomic-scale vertical and lateral homojunctions toward ultrascaled electronics and optoelectronics.
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Affiliation(s)
- Wenzhi Quan
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Yue Lu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China
| | - Qilong Wu
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Yujin Cheng
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Jingyi Hu
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Zehui Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Jialong Wang
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Zhenzhu Li
- Department of Materials, Imperial College London, London SW7 2AZ, U.K
| | - Lili Wang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, People's Republic of China
| | - Qingqing Ji
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China
| | - Yanfeng Zhang
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
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2
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The Growth of High-Quality Hexagonal GaTe Nanosheets Induced by ZnO Nanocrystals. CRYSTALS 2022. [DOI: 10.3390/cryst12050627] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/04/2023]
Abstract
The monoclinic and hexagonal gallium tellurides (m-GaTe and h-GaTe) show different applications in optoelectronic devices. Compared to the m-GaTe, the h-GaTe is a metastable phase, which generally exists in ultrathin samples and is difficult to obtain by direct chemical reaction. Herein, a hexagonal ZnO-induced crystal growth strategy was used for the design and fabrication of h-GaTe. The high-quality h-GaTe nanosheets were successfully grown on the (001) surface of hexagonal ZnO by the chemical vapor deposition method under ambient pressure. The SEM, XPS, XRD, and HRTEM characterizations uncovered a flower-like nanosheet morphology and a hexagonal crystal structure for the obtained GaTe samples. Meanwhile, the conductive atomic force microscope measurement indicates that the obtained h-GaTe nanosheet is a p-type semiconductor. Based on the electron localization function simulation, the lattice-induced crystal growth of h-GaTe was demonstrated. The results give an insight into the synthesis of metastable phase crystal and open an avenue for fabricating new two-dimensional devices by p-type h-GaTe.
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3
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Zhang R, Wei Y, Kang Y, Pu M, Li X, Ma X, Xu M, Luo X. Breaking the Cut-Off Wavelength Limit of GaTe through Self-Driven Oxygen Intercalation in Air. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2103429. [PMID: 34970845 PMCID: PMC8948563 DOI: 10.1002/advs.202103429] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/06/2021] [Revised: 10/30/2021] [Indexed: 05/20/2023]
Abstract
Low symmetric two dimensional (2D) semiconductors are of great significance for their potential applications in polarization-sensitive photodetection and quantum information devices. However, their real applications are limited by their photo-detecting wavelength ranges, which are restricted by their fundamental optical bandgaps. Recently, intercalation has been demonstrated to be a powerful strategy to modulate the optical bandgaps of 2D semiconductors. Here, the authors report the self-driven oxygen (O2 ) intercalation induced bandgap reduction from 1.75 to 1.19 eV in gallium telluride (GaTe) in air. This bandgap shrinkage provides the long-wavelength detection threshold above ≈1100 nm for O2 intercalated GaTe (referred to as GaTeO2 ), well beyond the cut-off wavelength at ≈708 nm for pristine GaTe. The GaTeO2 photodetectors have a high photoresponsivity, and highly anisotropic photodetection behavior to even sub-waveband radiation. The dichroic ratio (Imax /Imin ) of photocurrent is about 1.39 and 2.9 for 600 nm and 1100 nm, respectively. This findings demonstrates a broadband photodetector utilizing GaTe after breaking through its bandgap limitation by self-driven O2 intercalation in air and further reveal its photoconductivity anisotropic nature. This provides design strategies of 2D materials-based high-performance broadband photodetectors for the exploration of polarized state information.
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Affiliation(s)
- Renyan Zhang
- State Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐EngineeringInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209China
- Division of Frontier Science and TechnologyInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209China
- College of Advanced Interdisciplinary StudiesNational University of Defense TechnologyChangsha410073China
| | - Yuehua Wei
- College of Advanced Interdisciplinary StudiesNational University of Defense TechnologyChangsha410073China
| | - Yan Kang
- College of Advanced Interdisciplinary StudiesNational University of Defense TechnologyChangsha410073China
- Beijing Institute for Advanced StudyNational University of Defense TechnologyChangsha410073China
| | - Mingbo Pu
- State Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐EngineeringInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209China
- Division of Frontier Science and TechnologyInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209China
| | - Xiong Li
- State Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐EngineeringInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209China
- Division of Frontier Science and TechnologyInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209China
| | - Xiaoliang Ma
- State Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐EngineeringInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209China
- Division of Frontier Science and TechnologyInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209China
| | - Mingfeng Xu
- State Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐EngineeringInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209China
- Division of Frontier Science and TechnologyInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209China
| | - Xiangang Luo
- State Key Laboratory of Optical Technologies on Nano‐Fabrication and Micro‐EngineeringInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209China
- Division of Frontier Science and TechnologyInstitute of Optics and ElectronicsChinese Academy of SciencesChengdu610209China
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4
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Tong M, Hu Y, He W, Yu XL, Hu S, Cheng X, Jiang T. Ultraefficient Terahertz Emission Mediated by Shift-Current Photovoltaic Effect in Layered Gallium Telluride. ACS NANO 2021; 15:17565-17572. [PMID: 34664931 DOI: 10.1021/acsnano.1c04601] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Generating terahertz waves using thin-layered materials holds great potential for the realization of integrated terahertz devices. However, previous studies have been limited by restricted radiation intensity and finite efficiency. Exploiting materials with higher efficiency for terahertz emission has attracted increasing interest worldwide. Herein, with visible-light excitation, a thin-layered GaTe film is demonstrated to be a promising emitter of terahertz radiation induced by the shift-current photovoltaic effect. Through theoretical calculations, a transient charge-transfer process resulting from the asymmetric structure of GaTe is shown to be the origin of an ultrafast shift current. Furthermore, it was found that the amplitude of the resulting terahertz signals can be manipulated by both the fluence of the pump laser and the orientation of the sample. Such high emission efficiency from the shift current indicates that the layered material (GaTe) is an excellent candidate for photovoltaics and terahertz emitters.
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Affiliation(s)
- Mingyu Tong
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, PR China
| | - Yuze Hu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, PR China
| | - Weibao He
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, PR China
| | - Xiang-Long Yu
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, PR China
| | - Siyang Hu
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, PR China
| | - Xiang'ai Cheng
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, PR China
| | - Tian Jiang
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, PR China
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5
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Hoang NT, Lee JH, Vu TH, Cho S, Seong MJ. Thickness-dependent in-plane anisotropy of GaTe phonons. Sci Rep 2021; 11:21202. [PMID: 34707186 PMCID: PMC8551200 DOI: 10.1038/s41598-021-00673-0] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/04/2021] [Accepted: 10/11/2021] [Indexed: 11/09/2022] Open
Abstract
Gallium Telluride (GaTe), a layered material with monoclinic crystal structure, has recently attracted a lot of attention due to its unique physical properties and potential applications for angle-resolved photonics and electronics, where optical anisotropies are important. Despite a few reports on the in-plane anisotropies of GaTe, a comprehensive understanding of them remained unsatisfactory to date. In this work, we investigated thickness-dependent in-plane anisotropies of the 13 Raman-active modes and one Raman-inactive mode of GaTe by using angle-resolved polarized Raman spectroscopy, under both parallel and perpendicular polarization configurations in the spectral range from 20 to 300 cm-1. Raman modes of GaTe revealed distinctly different thickness-dependent anisotropies in parallel polarization configuration while nearly unchanged for the perpendicular configuration. Especially, three Ag modes at 40.2 ([Formula: see text]), 152.5 ([Formula: see text]), and 283.8 ([Formula: see text]) cm-1 exhibited an evident variation in anisotropic behavior as decreasing thickness down to 9 nm. The observed anisotropies were thoroughly explained by adopting the calculated interference effect and the semiclassical complex Raman tensor analysis.
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Affiliation(s)
- Nguyen The Hoang
- Department of Physics, Chung-Ang University, Seoul, 06974, Republic of Korea
| | - Je-Ho Lee
- Department of Physics, Chung-Ang University, Seoul, 06974, Republic of Korea
| | - Thi Hoa Vu
- Department of Physics and Energy Harvest Storage Research Center, University of Ulsan, Ulsan, 44610, Republic of Korea
| | - Sunglae Cho
- Department of Physics and Energy Harvest Storage Research Center, University of Ulsan, Ulsan, 44610, Republic of Korea.
| | - Maeng-Je Seong
- Department of Physics, Chung-Ang University, Seoul, 06974, Republic of Korea. .,Center for Berry Curvature-Based New Phenomena, Chung-Ang University, Seoul, 06974, Republic of Korea.
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6
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Li F, Chen M, Wang Y, Zhu X, Zhang X, Zou Z, Zhang D, Yi J, Li Z, Li D, Pan A. Strain-controlled synthesis of ultrathin hexagonal GaTe/MoS 2 heterostructure for sensitive photodetection. iScience 2021; 24:103031. [PMID: 34541467 PMCID: PMC8437799 DOI: 10.1016/j.isci.2021.103031] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/27/2021] [Revised: 06/15/2021] [Accepted: 08/20/2021] [Indexed: 11/18/2022] Open
Abstract
Ultrathin hexagonal GaTe, with relatively high charge density, holds great potential in the field of optoelectronic devices. However, the thermodynamical stability limits it fabrications as well as applications. Here, by introducing two-dimensional MoS2 as the substrate, we successfully realized the phase-controlled synthesis of ultrathin h-GaTe, leading to high-quality h-GaTe/MoS2 heterostructures. Theoretical calculation studies reveal that GaTe with hexagonal phase is more thermodynamically stable on MoS2 templates, which can be attributed to the strain stretching and the formation energy reduction. Based on the achieved p-n heterostructures, optoelectronic devices are designed and probed, where remarkable photoresponsivity (32.5 A/W) and fast photoresponse speed (<50 μs) are obtained, indicating well-behaved photo-sensing behaviors. The study here could offer a good reference for the controlled growth of the relevant materials, and the achieved heterostructure will find promising applications in future integrated electronic and optoelectronic devices and systems.
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Affiliation(s)
- Fang Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
- Key Laboratory of Inferior Crude Oil Processing of Guangdong Provincial Higher Education Institutes, School of Chemical Engineering, Guangdong University of Petrochemical Technology, Maoming, Guangdong 525000, China
| | - Mingxing Chen
- Key Laboratory for Matter Microstructure and Function of Hunan Province, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, School of Physics and Electronics, Hunan Normal University, Changsha 410081, China
| | - Yajuan Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
| | - Xiaoli Zhu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
| | - Xuehong Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
| | - Zixing Zou
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
| | - Danliang Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
| | - Jiali Yi
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
| | - Ziwei Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
| | - Dong Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, Hunan 410082, China
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7
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Du L, Zhao Y, Wu L, Hu X, Yao L, Wang Y, Bai X, Dai Y, Qiao J, Uddin MG, Li X, Lahtinen J, Bai X, Zhang G, Ji W, Sun Z. Giant anisotropic photonics in the 1D van der Waals semiconductor fibrous red phosphorus. Nat Commun 2021; 12:4822. [PMID: 34376660 PMCID: PMC8355160 DOI: 10.1038/s41467-021-25104-6] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/30/2020] [Accepted: 07/12/2021] [Indexed: 11/11/2022] Open
Abstract
A confined electronic system can host a wide variety of fascinating electronic, magnetic, valleytronic and photonic phenomena due to its reduced symmetry and quantum confinement effect. For the recently emerging one-dimensional van der Waals (1D vdW) materials with electrons confined in 1D sub-units, an enormous variety of intriguing physical properties and functionalities can be expected. Here, we demonstrate the coexistence of giant linear/nonlinear optical anisotropy and high emission yield in fibrous red phosphorus (FRP), an exotic 1D vdW semiconductor with quasi-flat bands and a sizeable bandgap in the visible spectral range. The degree of photoluminescence (third-order nonlinear) anisotropy can reach 90% (86%), comparable to the best performance achieved so far. Meanwhile, the photoluminescence (third-harmonic generation) intensity in 1D vdW FRP is strong, with quantum efficiency (third-order susceptibility) four (three) times larger than that in the most well-known 2D vdW materials (e.g., MoS2). The concurrent realization of large linear/nonlinear optical anisotropy and emission intensity in 1D vdW FRP paves the way towards transforming the landscape of technological innovations in photonics and optoelectronics.
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Affiliation(s)
- Luojun Du
- Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, Finland.
| | - Yanchong Zhao
- Beijing National Laboratory for Condensed Matter Physics; Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
| | - Linlu Wu
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing, P.R. China
| | - Xuerong Hu
- Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, Finland
- Institute of Photonics and Photon Technology, Northwest University, Xi'an, China
| | - Lide Yao
- Department of Applied Physics, Aalto University, Aalto, Finland
| | - Yadong Wang
- Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, Finland
| | - Xueyin Bai
- Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, Finland
| | - Yunyun Dai
- Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, Finland
| | - Jingsi Qiao
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing, P.R. China
- Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, Singapore
| | - Md Gius Uddin
- Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, Finland
| | - Xiaomei Li
- Beijing National Laboratory for Condensed Matter Physics; Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
| | - Jouko Lahtinen
- Department of Applied Physics, Aalto University, Aalto, Finland
| | - Xuedong Bai
- Beijing National Laboratory for Condensed Matter Physics; Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, China
| | - Guangyu Zhang
- Beijing National Laboratory for Condensed Matter Physics; Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, China
| | - Wei Ji
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing, P.R. China.
| | - Zhipei Sun
- Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, Finland.
- QTF Centre of Excellence, Department of Applied Physics, Aalto University, Aalto, Finland.
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8
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Liu M, Yang S, Han M, Feng S, Wang GG, Dang L, Zou B, Cai Y, Sun H, Yu J, Han JC, Liu Z. Controlled Growth of Large-Sized and Phase-Selectivity 2D GaTe Crystals. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2007909. [PMID: 33871163 DOI: 10.1002/smll.202007909] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/17/2020] [Revised: 02/08/2021] [Indexed: 06/12/2023]
Abstract
GaTe has recently attracted significant interest due to its direct bandgap and unique phase structure, which makes it a good candidate for optoelectronics. However, the controllable growth of large-sized monolayer and few-layer GaTe with tunable phase structures remains a great challenge. Here the controlled growth of large-sized GaTe with high quality, chemical uniformity, and good reproducibility is achieved through liquid-metal-assisted chemical vapor deposition method. By using liquid Ga, the rapid growth of 2D GaTe flakes with high phase-selectivity can be obtained due to its reduced reaction temperature. In addition, the method is used to synthesize many Ga-based 2D materials and their alloys, showing good universality. Raman spectra suggest that the as-grown GaTe own a relatively weak van der Waals interaction, where monoclinic GaTe displays highly-anisotropic optical properties. Furthermore, a p-n junction photodetector is fabricated using GaTe as a p-type semiconductor and 2D MoSe2 as a typical n-type semiconductor. The GaTe/MoSe2 heterostructure photodetector exhibits large photoresponsivity of 671.52 A W-1 and high photo-detectivity of 1.48 × 1010 Jones under illumination, owing to the enhanced light absorption and good quality of as-grown GaTe. These results indicate that 2D GaTe is a promising candidate for electronic and photoelectronic devices.
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Affiliation(s)
- Mingqiang Liu
- Shenzhen Key Laboratory for Advanced Materials, School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, P. R. China
| | - Shuo Yang
- Shenzhen Key Laboratory for Advanced Materials, School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, P. R. China
| | - Mao Han
- Shenzhen Key Laboratory for Advanced Materials, School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, P. R. China
| | - Simin Feng
- i-Lab, Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, 215123, P. R. China
| | - Gui-Gen Wang
- Shenzhen Key Laboratory for Advanced Materials, School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, P. R. China
- National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, Harbin, 150080, P. R. China
| | - Leyang Dang
- Shenzhen Key Laboratory for Advanced Materials, School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, P. R. China
| | - Bo Zou
- School of Science, Harbin Institute of Technology, Shenzhen, 518055, P. R. China
| | - Yawei Cai
- Shenzhen Key Laboratory for Advanced Materials, School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, P. R. China
| | - Huarui Sun
- School of Science, Harbin Institute of Technology, Shenzhen, 518055, P. R. China
| | - Jie Yu
- Shenzhen Key Laboratory for Advanced Materials, School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, P. R. China
| | - Jie-Cai Han
- National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, Harbin, 150080, P. R. China
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University (NTU), Singapore, 639798
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9
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Tien LC, Shih YC. Morphology-Controlled Vapor Phase Growth and Characterization of One-Dimensional GaTe Nanowires and Two-Dimensional Nanosheets for Potential Visible-Light Active Photocatalysts. NANOMATERIALS 2021; 11:nano11030778. [PMID: 33803827 PMCID: PMC8003267 DOI: 10.3390/nano11030778] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/23/2021] [Revised: 03/10/2021] [Accepted: 03/14/2021] [Indexed: 12/25/2022]
Abstract
Gallium telluride (GaTe) one-dimensional (1D) and two-dimensional (2D) materials have drawn much attention for high-performance optoelectronic applications because it possesses a direct bandgap for all thickness. We report the morphology-controlled vapor phase growth of 1D GaTe nanowires and 2D GaTe nanosheets by a simple physical vapor transport (PVT) approach. The surface morphology, crystal structure, phonon vibration modes, and optical property of samples were characterized and studied. The growth temperature is a key synthetic factor to control sample morphology. The 1D GaTe single crystal monoclinic nanowires were synthesized at 550 °C. The strong interlayer interaction and high surface migration of adatoms on c-sapphire enable the assembly of 1D nanowires into 2D nanosheet under 600 °C. Based on the characterization results demonstrated, we propose the van der Waals growth mechanism of 1D nanowires and 2D nanosheets. Moreover, the visible-light photocatalytic activity of 1D nanowires and 2D nanosheets was examined. Both 1D and 2D GaTe nanostructures exhibit visible-light active photocatalytic activity, suggesting that the GaTe nanostructures may be promising materials for visible light photocatalytic applications.
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10
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Tareen AK, Khan K, Aslam M, Zhang H, Liu X. Recent progress, challenges, and prospects in emerging group-VIA Xenes: synthesis, properties and novel applications. NANOSCALE 2021; 13:510-552. [PMID: 33404570 DOI: 10.1039/d0nr07444f] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
The discovery of graphene (G) attracted considerable attention to the study of other novel two-dimensional materials (2DMs), which is identified as modern day "alchemy" since researchers are converting the majority of promising periodic table elements into 2DMs. Among the family of 2DMs, the newly invented monoelemental, atomically thin 2DMs of groups IIIA-VIA, called "Xenes" (where, X = IIIA-VIA group elements, and "ene" is the Latin word for nanosheets (NSs)), are a very active area of research for the fabrication of future nanodevices with high speed, low cost and elevated efficiency. Currently, any novel structure of 2DMs from the typical Xenes will probably be applicable in electronic technology. Analysis of their possible highly sensitive synthesis and characterization present opportunities for theoretically examining proposed 2D-Xenes with atomic precision in ideal circumstances, thus providing theoretical predictions for experimental support. Several theoretically predicted and experimentally synthesized 2D-Xene materials have been investigated for the group-VIA elements (tellurene (2D-Te), and selenene (2D-Se)), which are similar to topological insulators (TIs), thus potentially rendering them suitable materials for application in upcoming nanodevices. Although the investigation and device application of these materials are still in their infancy, theoretical studies and a few experiment-based investigations have proven that they are complementary to conventional (i.e., layered bulk-derived) 2DMs. This review focuses on the synthesis of novel group-VIA Xenes (2D-Te and 2D-Se) and summarizes the current development in understanding their basic properties, with the current advancement in signifying device applications. Lastly, the future research prospects, further advanced applications and associated shortcomings of the group-VIA Xenes are summarized and highlighted.
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Affiliation(s)
- Ayesha Khan Tareen
- College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Ave, Shenzhen, 518060, People Republic of China. and Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy, Shenzhen University, Shenzhen, 518060, P.R. China.
| | - Karim Khan
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy, Shenzhen University, Shenzhen, 518060, P.R. China. and School of Electrical Engineering & Intelligentization, Dongguan University of Technology, Dongguan (DGUT), Dongguan, 523808, Guangdong Province, P. R. China and Government Degree college Paharpur, Gomel University, Dera Ismail Khan, Khyber Pakhtoonkhwa (K.P.K.), 29220, Islamic Republic of Pakistan
| | - Muhammad Aslam
- Government Degree college Paharpur, Gomel University, Dera Ismail Khan, Khyber Pakhtoonkhwa (K.P.K.), 29220, Islamic Republic of Pakistan
| | - Han Zhang
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy, Shenzhen University, Shenzhen, 518060, P.R. China.
| | - Xinke Liu
- College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Ave, Shenzhen, 518060, People Republic of China.
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11
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Li X, Chen C, Yang Y, Lei Z, Xu H. 2D Re-Based Transition Metal Chalcogenides: Progress, Challenges, and Opportunities. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:2002320. [PMID: 33304762 PMCID: PMC7709994 DOI: 10.1002/advs.202002320] [Citation(s) in RCA: 22] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/19/2020] [Revised: 08/22/2020] [Indexed: 05/16/2023]
Abstract
The rise of 2D transition-metal dichalcogenides (TMDs) materials has enormous implications for the scientific community and beyond. Among TMDs, ReX2 (X = S, Se) has attracted significant interest regarding its unusual 1T' structure and extraordinary properties in various fields during the past 7 years. For instance, ReX2 possesses large bandgaps (ReSe2: 1.3 eV, ReS2: 1.6 eV), distinctive interlayer decoupling, and strong anisotropic properties, which endow more degree of freedom for constructing novel optoelectronic, logic circuit, and sensor devices. Moreover, facile ion intercalation, abundant active sites, together with stable 1T' structure enable them great perspective to fabricate high-performance catalysts and advanced energy storage devices. In this review, the structural features, fundamental physicochemical properties, as well as all existing applications of Re-based TMDs materials are comprehensively introduced. Especially, the emerging synthesis strategies are critically analyzed and pay particular attention is paid to its growth mechanism with probing the assembly process of domain architectures. Finally, current challenges and future opportunities regarding the controlled preparation methods, property, and application exploration of Re-based TMDs are discussed.
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Affiliation(s)
- Xiaobo Li
- Key Laboratory of Applied Surface and Colloid ChemistryMinistry of EducationShaanxi Key Laboratory for Advanced Energy DevicesSchool of Materials Science and EngineeringShaanxi Normal UniversityXi'an710119P. R. China
| | - Chao Chen
- Key Laboratory of Applied Surface and Colloid ChemistryMinistry of EducationShaanxi Key Laboratory for Advanced Energy DevicesSchool of Materials Science and EngineeringShaanxi Normal UniversityXi'an710119P. R. China
| | - Yang Yang
- Key Laboratory of Applied Surface and Colloid ChemistryMinistry of EducationShaanxi Key Laboratory for Advanced Energy DevicesSchool of Materials Science and EngineeringShaanxi Normal UniversityXi'an710119P. R. China
| | - Zhibin Lei
- Key Laboratory of Applied Surface and Colloid ChemistryMinistry of EducationShaanxi Key Laboratory for Advanced Energy DevicesSchool of Materials Science and EngineeringShaanxi Normal UniversityXi'an710119P. R. China
| | - Hua Xu
- Key Laboratory of Applied Surface and Colloid ChemistryMinistry of EducationShaanxi Key Laboratory for Advanced Energy DevicesSchool of Materials Science and EngineeringShaanxi Normal UniversityXi'an710119P. R. China
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12
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Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates. MATERIALS 2020; 13:ma13163447. [PMID: 32764315 PMCID: PMC7475857 DOI: 10.3390/ma13163447] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/29/2020] [Revised: 07/27/2020] [Accepted: 07/30/2020] [Indexed: 11/17/2022]
Abstract
Development of molecular beam epitaxy (MBE) of two-dimensional (2D) layered materials is an inevitable step in realizing novel devices based on 2D materials and heterostructures. However, due to existence of numerous polytypes and occurrence of additional phases, the synthesis of 2D films remains a difficult task. This paper reports on MBE growth of GaSe, InSe, and GaTe layers and related heterostructures on GaAs(001) substrates by using a Se valve cracking cell and group III metal effusion cells. The sophisticated self-consistent analysis of X-ray diffraction, transmission electron microscopy, and Raman spectroscopy data was used to establish the correlation between growth conditions, formed polytypes and additional phases, surface morphology and crystalline structure of the III–VI 2D layers. The photoluminescence and Raman spectra of the grown films are discussed in detail to confirm or correct the structural findings. The requirement of a high growth temperature for the fabrication of optically active 2D layers was confirmed for all materials. However, this also facilitated the strong diffusion of group III metals in III–VI and III–VI/II–VI heterostructures. In particular, the strong In diffusion into the underlying ZnSe layers was observed in ZnSe/InSe/ZnSe quantum well structures, and the Ga diffusion into the top InSe layer grown at ~450 °C was confirmed by the Raman data in the InSe/GaSe heterostructures. The results on fabrication of the GaSe/GaTe quantum well structures are presented as well, although the choice of optimum growth temperatures to make them optically active is still a challenge.
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13
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Liu CW, Dai JJ, Wu SK, Diep NQ, Huynh SH, Mai TT, Wen HC, Yuan CT, Chou WC, Shen JL, Luc HH. Substrate-induced strain in 2D layered GaSe materials grown by molecular beam epitaxy. Sci Rep 2020; 10:12972. [PMID: 32737426 PMCID: PMC7395717 DOI: 10.1038/s41598-020-69946-4] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/07/2020] [Accepted: 06/16/2020] [Indexed: 11/21/2022] Open
Abstract
Two-dimensional (2D) layered GaSe films were grown on GaAs (001), GaN/Sapphire, and Mica substrates by molecular beam epitaxy (MBE). The in situ reflective high-energy electron diffraction monitoring reveals randomly in-plane orientations of nucleated GaSe layers grown on hexagonal GaN/Sapphire and Mica substrates, whereas single-orientation GaSe domain is predominant in the GaSe/GaAs (001) sample. Strong red-shifts in the frequency of in-plane [Formula: see text] vibration modes and bound exciton emissions observed from Raman scattering and photoluminescence spectra in all samples are attributed to the unintentionally biaxial in-plane tensile strains, induced by the dissimilarity of symmetrical surface structure between the 2D-GaSe layers and the substrates during the epitaxial growth. The results in this study provide an important understanding of the MBE-growth process of 2D-GaSe on 2D/3D hybrid-heterostructures and pave the way in strain engineering and optical manipulation of 2D layered GaSe materials for novel optoelectronic integrated technologies.
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Affiliation(s)
- Cheng-Wei Liu
- Department of Electrophysics, National Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Jin-Ji Dai
- Department of Electrophysics, National Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Ssu-Kuan Wu
- Department of Electrophysics, National Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Nhu-Quynh Diep
- Department of Electrophysics, National Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Sa-Hoang Huynh
- Department of Electrophysics, National Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Thi-Thu Mai
- Department of Electrophysics, National Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Hua-Chiang Wen
- Department of Electrophysics, National Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Chi-Tsu Yuan
- Department of Physics, Chung Yuan Christian University, Chung Li, 32056, Taiwan
| | - Wu-Ching Chou
- Department of Electrophysics, National Chiao Tung University, Hsinchu, 30010, Taiwan.
| | - Ji-Lin Shen
- Department of Physics, Chung Yuan Christian University, Chung Li, 32056, Taiwan
| | - Huy-Hoang Luc
- Faculty of Physics, Hanoi National University of Education, Cau Giay, Hanoi, Vietnam
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14
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Zhang KC, Li YF, Liu Y, Zhu Y. First-principles study on the anisotropic transport of electrons and phonons in monolayer and bulk GaTe: a comparative study. Phys Chem Chem Phys 2020; 22:15270-15280. [PMID: 32613997 DOI: 10.1039/d0cp02600j] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Recently, monoclinic-phase GaTe has attracted much attention due to its potential applications in nanoelectronics. Despite the experimental research, theoretical studies on the thermal and transport properties, which are necessary to provide information for future applications, are still absent. We have systematically investigated the electronic, phonon and electron transporting, and thermoelectric properties of monolayer and bulk GaTe using first-principles calculations plus the Boltzmann transport equation. At the valence band maximum and conduction band minimum, the effective mass shows large anisotropy as the band dispersions are along different k-paths. The group velocity of acoustic modes also shows large anisotropy owing to the in-plane low-symmetry. Our calculations reveal that the in-plane thermal conductivities, κa and κb, take 3.5 and 8.9 W m-1 K-1, respectively, for the bulk at 300 K, compared to κa = 5.5 and κb = 10.4 W m-1 K-1 of the monolayer. Due to the van der Waals interactions between interlayers, the out-of-plane thermal conductivity is very small, κc = 1.8 W m-1 K-1. The difference between the in-plane thermal conductivities of the bulk and the monolayer can be attributed to the strengthened Umklapp scattering, which is caused by the stiffening of the lowest-frequency optical mode in the bulk. The hole mobilities of the bulk is found to be about 12-35 cm2 V-1 s-1 at 300 K, in good agreement with the experimental results. The monolayer is found to have smaller mobility but larger anisotropy than those of the bulk. Interestingly, the out-of-plane conductivity is anomalously larger than the in-plane one for the bulk, which is attributed to the orbital overlaps between the interlayer Te atoms. Moreover, n-type GaTe is found to have much larger mobility and anisotropy than the p-type one, which is useful for future applications. Compared with the case of monolayer GaTe, thermoelectric performance can be enhanced by one order of magnitude for the bulk GaTe by exploiting the out-of-plane thermal and electrical conductivities.
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Affiliation(s)
- Kai-Cheng Zhang
- College of Mathematics and Physics, Bohai University, Jinzhou 121013, China.
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15
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Wu K, Blei M, Chen B, Liu L, Cai H, Brayfield C, Wright D, Zhuang H, Tongay S. Phase Transition across Anisotropic NbS 3 and Direct Gap Semiconductor TiS 3 at Nominal Titanium Alloying Limit. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2000018. [PMID: 32167204 DOI: 10.1002/adma.202000018] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/02/2020] [Revised: 02/17/2020] [Accepted: 02/19/2020] [Indexed: 06/10/2023]
Abstract
Alloying selected layered transitional metal trichalcogenides (TMTCs) with unique chain-like structures offers the opportunities for structural, optical, and electrical engineering thus expands the regime of this class of pseudo-one-dimensional materials. Here, the novel phase transition in anisotropic Nb(1- x ) Tix S3 alloys is demonstrated for the first time. Results show that Nb(1- x ) Tix S3 can be fully alloyed across the entire composition range from triclinic-phase NbS3 to monoclinic-phase TiS3 . Surprisingly, incorporation of a small concentration of Ti (x ≈ 0.05-0.18) into NbS3 host matrix is sufficient to induce triclinic to monoclinic transition. Theoretical studies suggest that Ti atoms effectively introduce hole doping, thus rapidly decreases the total energy of monoclinic phase and induces the phase transition. When alloyed, crystalline and optical anisotropy are largely preserved as evidenced by high resolution transmission electron microscopy and angle-resolved Raman spectroscopy. Further Raman measurements identify Raman modes to determine crystalline anisotropy direction and offer insights into the degree of anisotropy. Overall results introduce Nb(1- x ) Tix S3 as a new and easy phase change material and mark the first phase engineering in anisotropic van der Waals (vdW) trichalcogenide systems for their potential applications in two-dimensional superconductivity, electronics, photonics, and information technologies.
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Affiliation(s)
- Kedi Wu
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA
| | - Mark Blei
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA
| | - Bin Chen
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA
| | - Lei Liu
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA
| | - Hui Cai
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA
| | - Cassondra Brayfield
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA
| | - David Wright
- LeRoy Eyring Center for Solid State Science, Arizona State University, Tempe, AZ, 85287, USA
| | - Houlong Zhuang
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA
| | - Sefaattin Tongay
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA
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16
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Ho CH, Chiou MC, Herninda TM. Nanowire Grid Polarization and Polarized Excitonic Emission Observed in Multilayer GaTe. J Phys Chem Lett 2020; 11:608-617. [PMID: 31905289 DOI: 10.1021/acs.jpclett.9b03569] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
In this study, near-infrared (NIR) x-polarized (P-state) light is created from the transmission ray of monoclinic multilayer GaTe near the band edge. The P-state transmittance photons are produced via the transmission light of a ribbonlike multilayer GaTe with a plurality of nanowire grids being parallel and constructed along the y direction (b axis) from 1.56 to 1.62 eV. At 300 K, a P-state excitonic emission at 1.652 eV can be clearly detected in polarized microphotoluminescence (μPL) measurement. The free-exciton extinction energy and recombination lifetime of the band-edge exciton are evaluated and determined to be ΔE = 32 ± 4 meV and τ ≈ 0.032 ns, respectively, for the multilayer GaTe. Polarized microthermoreflectance (μTR) measurement also verifies that the x-polarized transition is allowed while y-polarized (S-state) transition is forbidden in the multilayer GaTe. An asymmetric p-to-p transition along the x polarization is thus inferred to comprise the band edge of multilayer GaTe to form in-plane optical anisotropy.
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Affiliation(s)
- Ching-Hwa Ho
- Graduate Institute of Applied Science and Technology , National Taiwan University of Science and Technology , Taipei 106 , Taiwan
| | - Mei-Chan Chiou
- Graduate Institute of Applied Science and Technology , National Taiwan University of Science and Technology , Taipei 106 , Taiwan
| | - Thalita Maysha Herninda
- Graduate Institute of Applied Science and Technology , National Taiwan University of Science and Technology , Taipei 106 , Taiwan
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17
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Li Z, Xu B, Liang D, Pan A. Polarization-Dependent Optical Properties and Optoelectronic Devices of 2D Materials. RESEARCH (WASHINGTON, D.C.) 2020; 2020:5464258. [PMID: 33029588 PMCID: PMC7521027 DOI: 10.34133/2020/5464258] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/22/2020] [Accepted: 07/26/2020] [Indexed: 01/12/2023]
Abstract
The development of optoelectronic devices requires breakthroughs in new material systems and novel device mechanisms, and the demand recently changes from the detection of signal intensity and responsivity to the exploration of sensitivity of polarized state information. Two-dimensional (2D) materials are a rich family exhibiting diverse physical and electronic properties for polarization device applications, including anisotropic materials, valleytronic materials, and other hybrid heterostructures. In this review, we first review the polarized-light-dependent physical mechanism in 2D materials, then present detailed descriptions in optical and optoelectronic properties, involving Raman shift, optical absorption, and light emission and functional optoelectronic devices. Finally, a comment is made on future developments and challenges. The plethora of 2D materials and their heterostructures offers the promise of polarization-dependent scientific discovery and optoelectronic device application.
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Affiliation(s)
- Ziwei Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Boyi Xu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Delang Liang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials and Engineering, Hunan University, Changsha, Hunan 410082, China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials and Engineering, Hunan University, Changsha, Hunan 410082, China
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18
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Study of Oxidation and Polarization-Dependent Optical Properties of Environmentally Stable Layered GaTe Using a Novel Passivation Approach. NANOMATERIALS 2019; 9:nano9111510. [PMID: 31652827 PMCID: PMC6915591 DOI: 10.3390/nano9111510] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/19/2019] [Revised: 10/17/2019] [Accepted: 10/18/2019] [Indexed: 11/17/2022]
Abstract
Emerging two-dimensional gallium chalcogenides, such as gallium telluride (GaTe), are considered promising layered semiconductors that can serve as vital building blocks towards the implementation of nanodevices in the fields of nanoelectronics, optoelectronics, and quantum photonics. However, oxidation-induced electronic, structural, and optical changes observed in ambient-exposed gallium chalcogenides need to be further investigated and addressed. Herein, we report on the thickness-dependent effect of air exposure on the Raman and photoluminescence (PL) properties of GaTe flakes, with thicknesses spanning in the range of a few layers to 100 nm. We have developed a novel chemical passivation that results in complete encapsulation of the as-exfoliated GaTe flakes in ultrathin hydrogen–silsesquioxane (HSQ) film. A combination of correlation and comparison of Raman and PL studies reveal that the HSQ-capped GaTe flakes are effectively protected from oxidation in air ambient over the studied-period of one year, and thus, preserving their structural and optical characteristics. This contrasts with the behavior of uncapped GaTe, where we observe a significant reduction of the GaTe-related PL (~100×) and Raman (~4×) peak intensities for the few-layered flakes over a period of few days. The time-evolution of the Raman spectra in uncapped GaTe is accompanied by the appearance of two new prominent broad peaks at ~130 cm−1 and ~146 cm−1, which are attributed to the formation of polycrystalline tellurium, due to oxidation of ambient-exposed GaTe. Furthermore, and by leveraging this novel passivation, we were able to explore the optical anisotropy of HSQ-capped GaTe flakes. This is caused by the one-dimensional-like nature of the GaTe layer, as the layer comprises Ga–Ga chains extending along the b-axis direction. In concurrence with high-resolution transmission electron microscopy analysis, polarization-dependent PL spectroscopy was used to identify the b-axis crystal direction in HSQ-capped GaTe flakes with various thicknesses over a range of wavelengths (458 nm–633 nm). Thus, our novel surface-passivation offers a new approach to explore and reveal the physical properties of the layered GaTe, with the potential of fabricating reliable polarization-dependent nanophotonics with structural and optical stability.
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19
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Zhang Y, Yang X, Zhang P, Liu D, Zou Z, Tan R, Gui J. Morphology-tunable & template-free fabrication of MoS2 nanostructures with enhanced photoreduction activities for Cr(VI). J Photochem Photobiol A Chem 2019. [DOI: 10.1016/j.jphotochem.2019.01.016] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
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20
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Abnormal band bowing effects in phase instability crossover region of GaSe 1-xTe x nanomaterials. Nat Commun 2018; 9:1927. [PMID: 29765042 PMCID: PMC5953935 DOI: 10.1038/s41467-018-04328-z] [Citation(s) in RCA: 19] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/11/2017] [Accepted: 04/11/2018] [Indexed: 11/15/2022] Open
Abstract
Akin to the enormous number of discoveries made through traditional semiconductor alloys, alloying selected 2D semiconductors enables engineering of their electronic structure for a wide range of new applications. 2D alloys have been demonstrated when two components crystallized in the same phase, and their bandgaps displayed predictable monotonic variation. By stabilizing previously unobserved compositions and phases of GaSe1−xTex at nanoscales on GaAs(111), we demonstrate abnormal band bowing effects and phase instability region when components crystallize in different phases. Advanced microscopy and spectroscopy measurements show as tellurium is alloyed into GaSe, nanostructures undergo hexagonal to monoclinic and isotropic to anisotropic transition. There exists an instability region (0.56 < x < 0.67) where both phases compete and coexist, and two different bandgap values can be found at the same composition leading to anomalous band bowing effects. Results highlight unique alloying effects, not existing in single-phase alloys, and phase engineering routes for potential applications in photonic and electronics. Alloys of two-dimensional materials normally occur when two components crystallize in the same phase. Here, the authors observe an anomalous phase instability, accompanied by a band bowing effect, in GaSe1-xTex alloys on GaAs(111).
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21
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Zhang Q, Liu C, Liu X, Liu J, Cui Z, Zhang Y, Yang L, Zhao Y, Xu TT, Chen Y, Wei J, Mao Z, Li D. Thermal Transport in Quasi-1D van der Waals Crystal Ta 2Pd 3Se 8 Nanowires: Size and Length Dependence. ACS NANO 2018; 12:2634-2642. [PMID: 29474086 DOI: 10.1021/acsnano.7b08718] [Citation(s) in RCA: 29] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
Van der Waals (vdW) crystals with covalently bonded building blocks assembled together through vdW interactions have attracted tremendous attention recently because of their interesting properties and promising applications. Compared to the explosive research on two-dimensional (2D) vdW materials, quasi-one-dimensional (quasi-1D) vdW crystals have received considerably less attention, while they also present rich physics and engineering implications. Here we report on the thermal conductivity of exfoliated quasi-1D Ta2Pd3Se8 vdW nanowires. Interestingly, even though the interatomic interactions along each molecular chain are much stronger than the interchain vdW interactions, the measured thermal conductivity still demonstrates a clear dependence on the cross-sectional size up to >110 nm. The results also reveal that partial ballistic phonon transport can persist over 13 μm at room temperature along the molecular chain direction, the longest experimentally observed ballistic transport distance with observable effects on thermal conductivity so far. First-principles calculations suggest that the ultralong ballistic phonon transport arises from the highly focused longitudinal phonons propagating along the molecular chains. These data help to understand phonon transport through quasi-1D vdW crystals, facilitating various applications of this class of materials.
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Affiliation(s)
- Qian Zhang
- Department of Mechanical Engineering , Vanderbilt University , Nashville , Tennessee 37235 , United States
| | - Chenhan Liu
- School of Mechanical Engineering and Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments , Southeast University , Nanjing 210096 , PR China
| | - Xue Liu
- Department of Physics and Engineering Physics , Tulane University , New Orleans , Louisiana 70118 , United States
| | - Jinyu Liu
- Department of Physics and Engineering Physics , Tulane University , New Orleans , Louisiana 70118 , United States
| | - Zhiguang Cui
- Department of Mechanical Engineering and Engineering Science , The University of North Carolina at Charlotte , Charlotte , North Carolina 28223 , United States
| | - Yin Zhang
- Department of Mechanical Engineering , Vanderbilt University , Nashville , Tennessee 37235 , United States
- School of Mechanical Engineering and Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments , Southeast University , Nanjing 210096 , PR China
| | - Lin Yang
- Department of Mechanical Engineering , Vanderbilt University , Nashville , Tennessee 37235 , United States
| | - Yang Zhao
- Department of Mechanical Engineering , Vanderbilt University , Nashville , Tennessee 37235 , United States
| | - Terry T Xu
- Department of Mechanical Engineering and Engineering Science , The University of North Carolina at Charlotte , Charlotte , North Carolina 28223 , United States
| | - Yunfei Chen
- School of Mechanical Engineering and Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments , Southeast University , Nanjing 210096 , PR China
| | - Jiang Wei
- Department of Physics and Engineering Physics , Tulane University , New Orleans , Louisiana 70118 , United States
| | - Zhiqiang Mao
- Department of Physics and Engineering Physics , Tulane University , New Orleans , Louisiana 70118 , United States
| | - Deyu Li
- Department of Mechanical Engineering , Vanderbilt University , Nashville , Tennessee 37235 , United States
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22
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Zeng M, Xiao Y, Liu J, Yang K, Fu L. Exploring Two-Dimensional Materials toward the Next-Generation Circuits: From Monomer Design to Assembly Control. Chem Rev 2018; 118:6236-6296. [DOI: 10.1021/acs.chemrev.7b00633] [Citation(s) in RCA: 298] [Impact Index Per Article: 49.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/06/2023]
Affiliation(s)
- Mengqi Zeng
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China
| | - Yao Xiao
- The Institute for Advanced Studies (IAS), Wuhan University, Wuhan 430072, China
| | - Jinxin Liu
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China
| | - Kena Yang
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China
| | - Lei Fu
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China
- The Institute for Advanced Studies (IAS), Wuhan University, Wuhan 430072, China
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23
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Yang S, Qin Y, Chen B, Özçelik VO, White CE, Shen Y, Yang S, Tongay S. Novel Surface Molecular Functionalization Route To Enhance Environmental Stability of Tellurium-Containing 2D Layers. ACS APPLIED MATERIALS & INTERFACES 2017; 9:44625-44631. [PMID: 29192495 DOI: 10.1021/acsami.7b14873] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Recent studies have shown that tellurium-based two-dimensional (2D) crystals undergo dramatic structural, physical, and chemical changes under ambient conditions, which adversely impact their much desired properties. Here, we introduce a diazonium molecule functionalization-based surface engineering route that greatly enhances their environmental stability without sacrificing their much desired properties. Spectroscopy and microscopy results show that diazonium groups significantly slow down the surface reactions, and consequently, gallium telluride (GaTe), zirconium telluride (ZrTe3), and molybdenum ditelluride (MoTe2) gain strong resistance to surface transformation in air or when immersed under water. Density functional theory calculations show that functionalizing molecules reduce surface reactivity of Te-containing 2D surfaces by chemical binding followed by an electron withdrawal process. While pristine surfaces structurally decompose because of strong reactivity of Te surface atoms, passivated functionalized surfaces retain their structural anisotropy, optical band gap, and emission characteristics as evidenced by our conductive atomic force microscopy, photoluminescence, and absorption spectroscopy measurements. Overall, our findings offer an effective method to increase the stability of these environmentally sensitive materials without impacting much of their physical properties.
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Affiliation(s)
- Sijie Yang
- School for Engineering of Matter, Transport and Energy, Arizona State University , Tempe, Arizona 85287, United States
| | - Ying Qin
- School for Engineering of Matter, Transport and Energy, Arizona State University , Tempe, Arizona 85287, United States
| | - Bin Chen
- School for Engineering of Matter, Transport and Energy, Arizona State University , Tempe, Arizona 85287, United States
| | | | | | - Yuxia Shen
- School for Engineering of Matter, Transport and Energy, Arizona State University , Tempe, Arizona 85287, United States
| | - Shengxue Yang
- School of Materials Science and Engineering, Beihang University , Beijing 100191, People's Republic of China
| | - Sefaattin Tongay
- School for Engineering of Matter, Transport and Energy, Arizona State University , Tempe, Arizona 85287, United States
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Li L, Gong P, Wang W, Deng B, Pi L, Yu J, Zhou X, Shi X, Li H, Zhai T. Strong In-Plane Anisotropies of Optical and Electrical Response in Layered Dimetal Chalcogenide. ACS NANO 2017; 11:10264-10272. [PMID: 28901748 DOI: 10.1021/acsnano.7b04860] [Citation(s) in RCA: 49] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
An interesting in-plane anisotropic layered dimetal chalcogenide Ta2NiS5 is introduced, and the optical and electrical properties with respect to its in-plane anisotropy are systematically studied. The Raman vibration modes have been identified by Raman spectra measurements combined with calculations of phonon-related properties. Importantly, the Ta2NiS5 flakes exhibit strong anisotropic Raman response under the angle-resolved polarized Raman spectroscopy measurements. We found that Raman intensities of the Ag mode not only depend on rotation angle but are also related to the sample thickness. In contrast, the infrared absorption with light polarized along the a axis direction is always larger than that in the c axis direction regardless of thickness under the polarization-resolved infrared spectroscopy measurements. Remarkably, the first-principles calculations combined with angle-resolved conductance measurements indicate strong anisotropic conductivity of Ta2NiS5. Our results not only prove Ta2NiS5 is a promising in-plane anisotropic 2D material but also provide an interesting platform for future functionalized electronic devices.
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Affiliation(s)
- Liang Li
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST) , Wuhan 430074, P.R. China
| | - Penglai Gong
- Department of Physics, Southern University of Science and Technology , Shenzhen 518055, P.R. China
| | - Weike Wang
- Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications, College of Physics and Information Science, Hunan Normal University , Changsha 410081, P.R. China
| | - Bei Deng
- Department of Physics, Southern University of Science and Technology , Shenzhen 518055, P.R. China
| | - Lejing Pi
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST) , Wuhan 430074, P.R. China
| | - Jing Yu
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST) , Wuhan 430074, P.R. China
| | - Xing Zhou
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST) , Wuhan 430074, P.R. China
| | - Xingqiang Shi
- Department of Physics, Southern University of Science and Technology , Shenzhen 518055, P.R. China
| | - Huiqiao Li
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST) , Wuhan 430074, P.R. China
| | - Tianyou Zhai
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST) , Wuhan 430074, P.R. China
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Tianjin University , and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, P.R. China
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25
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Chen B, Wu K, Suslu A, Yang S, Cai H, Yano A, Soignard E, Aoki T, March K, Shen Y, Tongay S. Controlling Structural Anisotropy of Anisotropic 2D Layers in Pseudo-1D/2D Material Heterojunctions. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29. [PMID: 28692772 DOI: 10.1002/adma.201701201] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/01/2017] [Revised: 05/24/2017] [Indexed: 06/07/2023]
Abstract
Chemical vapor deposition and growth dynamics of highly anisotropic 2D lateral heterojunctions between pseudo-1D ReS2 and isotropic WS2 monolayers are reported for the first time. Constituent ReS2 and WS2 layers have vastly different atomic structure, crystallizing in anisotropic 1T' and isotropic 2H phases, respectively. Through high-resolution scanning transmission electron microscopy, electron energy loss spectroscopy, and angle-resolved Raman spectroscopy, this study is able to provide the very first atomic look at intimate interfaces between these dissimilar 2D materials. Surprisingly, the results reveal that ReS2 lateral heterojunctions to WS2 produce well-oriented (highly anisotropic) Re-chains perpendicular to WS2 edges. When vertically stacked, Re-chains orient themselves along the WS2 zigzag direction, and consequently, Re-chains exhibit six-fold rotation, resulting in loss of macroscopic scale anisotropy. The degree of anisotropy of ReS2 on WS2 largely depends on the domain size, and decreases for increasing domain size due to randomization of Re-chains and formation of ReS2 subdomains. Present work establishes the growth dynamics of atomic junctions between novel anisotropic/isotropic 2D materials, and overall results mark the very first demonstration of control over anisotropy direction, which is a significant leap forward for large-scale nanomanufacturing of anisotropic systems.
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Affiliation(s)
- Bin Chen
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA
| | - Kedi Wu
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA
| | - Aslihan Suslu
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA
| | - Sijie Yang
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA
| | - Hui Cai
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA
| | - Aliya Yano
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA
| | - Emmanuel Soignard
- LeRoy Eyring Center for Solid State Science, Arizona State University, Tempe, AZ, 85287, USA
| | - Toshihiro Aoki
- LeRoy Eyring Center for Solid State Science, Arizona State University, Tempe, AZ, 85287, USA
| | - Katia March
- LeRoy Eyring Center for Solid State Science, Arizona State University, Tempe, AZ, 85287, USA
| | - Yuxia Shen
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA
| | - Sefaattin Tongay
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA
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Yang S, Cai H, Chen B, Ko C, Özçelik VO, Ogletree DF, White CE, Shen Y, Tongay S. Environmental stability of 2D anisotropic tellurium containing nanomaterials: anisotropic to isotropic transition. NANOSCALE 2017; 9:12288-12294. [PMID: 28809419 DOI: 10.1039/c7nr02397a] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We report on the vibrational (Raman) spectrum and structural transformation of semiconducting pseudo-1D GaTe and ZrTe3 nanomaterials driven by ambient molecular interactions at the nanoscale by angle-resolved Raman spectroscopy, atomic force microscopy (AFM), and environmental X-ray photoelectron (XPS) measurements. The results show that tellurium containing pseudo-1D materials undergo drastic structural and physical changes within a week. During this process, new Raman peaks start to emerge and surface roughness increases substantially. Surprisingly, aged Raman spectra of GaTe, ZrTe3, and α-TeOx show striking similarities suggesting that oxidation of tellurium takes place. Careful, environmental tests reveal that the interaction between GaTe and H2O molecules forms Te-O bonds at the outermost layers of GaTe which leads to newly emerging Raman peaks, a much reduced Schottky junction current density, and an anisotropic to isotropic structural transition. These findings offer fresh interpretation of the aging mechanisms for these material systems, provide new interpretation of the Raman spectrum of aged GaTe which was previously presumed to be of the hexagonal phase, and introduce an anisotropic to isotropic transformation effect induced by molecular interactions on the surface.
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Affiliation(s)
- Sijie Yang
- School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287, USA.
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