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Xu W, Tang X, Xiong J, Xu W, Zhou H, Yu C, Lou Y, Feng L. Organic-Hydrochloride-Modified ZnO Electron Transport Layer for Efficient Defect Passivation and Stress Release in Rigid and Flexible all Inorganic Perovskite Solar Cells. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2312230. [PMID: 38516959 DOI: 10.1002/smll.202312230] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/28/2023] [Revised: 02/28/2024] [Indexed: 03/23/2024]
Abstract
All inorganic CsPbI2Br perovskite (AIP) has attracted great attention due to its excellent resistance against thermal stress as well as the remarkable capability to deliver high-voltage output. However, CsPbI2Br perovskite solar cells (PeSCs) still encounter critical challenges in attaining both high efficiency and mechanical stability for commercial applications. In this work, formamidine disulfide dihydrochloride (FADD) modified ZnO electron transport layer (ETL) has been developed for fabricating inverted devices on either rigid or flexible substrate. It is found that the FADD modification leads to efficient defects passivation, thereby significantly reducing charge recombination at the AIP/ETL interface. As a result, rigid PeSCs (r-PeSCs) deliver an enhanced efficiency of 16.05% and improved long-term thermal stability. Moreover, the introduced FADD can regulate the Young's modulus (or Derjaguin-Muller-Toporov (DMT) modilus) of ZnO ETL and dissipate stress concentration at the AIP/ETL interface, effectively restraining the crack generation and improving the mechanical stability of PeSCs. The flexible PeSCs (f-PeSCs) exhibit one of the best performances so far reported with excellent stability against 6000 bending cycles at a curvature radius of 5 mm. This work thus provides an effective strategy to simultaneously improve the photovoltaic performance and mechanical stability.
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Affiliation(s)
- Wenjie Xu
- Soochow Institute for Energy and Materials Innovation (SIEMIS), School of Energy, Soochow University, Suzhou, 215006, China
- Jiangsu Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies, Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou, 215006, China
| | - Xiaoxuan Tang
- Soochow Institute for Energy and Materials Innovation (SIEMIS), School of Energy, Soochow University, Suzhou, 215006, China
- Jiangsu Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies, Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou, 215006, China
| | - Jie Xiong
- Soochow Institute for Energy and Materials Innovation (SIEMIS), School of Energy, Soochow University, Suzhou, 215006, China
- Jiangsu Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies, Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou, 215006, China
| | - Weiwei Xu
- Soochow Institute for Energy and Materials Innovation (SIEMIS), School of Energy, Soochow University, Suzhou, 215006, China
- Jiangsu Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies, Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou, 215006, China
| | - Heng Zhou
- Soochow Institute for Energy and Materials Innovation (SIEMIS), School of Energy, Soochow University, Suzhou, 215006, China
- Jiangsu Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies, Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou, 215006, China
| | - Chaohan Yu
- Soochow Institute for Energy and Materials Innovation (SIEMIS), School of Energy, Soochow University, Suzhou, 215006, China
- Jiangsu Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies, Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou, 215006, China
| | - Yanhui Lou
- Soochow Institute for Energy and Materials Innovation (SIEMIS), School of Energy, Soochow University, Suzhou, 215006, China
- Jiangsu Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies, Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou, 215006, China
| | - Lai Feng
- Soochow Institute for Energy and Materials Innovation (SIEMIS), School of Energy, Soochow University, Suzhou, 215006, China
- Jiangsu Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies, Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou, 215006, China
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2
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Wang S, Han Z, Zhang L, Shi Y, Cao S, Chen Y, Deng Z, Yang X, Li J, Sun B. Indeno[3,2- b]carbazole-Based Small Molecule Layer Enables Optimized Carrier Transport for PbS Quantum Dot NIR Photodetectors. J Phys Chem Lett 2024; 15:6750-6757. [PMID: 38912792 DOI: 10.1021/acs.jpclett.4c01567] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/25/2024]
Abstract
Colloidal quantum dots (CQDs) have garnered considerable attention for photodetectors (PDs), attributable to exceptional photoelectric properties and ease solution-based processing. However, the prevalent use of 1,2-ethanedithiol (EDT) as a hole transport layer (HTL) has limitations, such as energy level discrepancies, requisite oxidation, and intricate multilayer assembly. Organic p-type materials, lauded for their superior attributes and synthetic versatility, are now stepping forward as viable substitutes for conventional EDT HTLs. In this work, we introduced an organic HTL derived from indolo[3,2-b]carbazole, named ZL004, leading to a marked improvement in carrier generation and collection, facilitated by the optimized band alignment and enhanced interfacial charge dynamics. The ZL004-based PDs exhibit a photoresponsivity of 0.45 A/W, a noise current of 1.8 × 10-11 A Hz-0.5, a specific detectivity of 4.6 × 109 Jones, and an expansive linear dynamic range of 107 dB─surpassing EDT-based devices across the board, demonstrating the extraordinary property of organic p-type materials for CQD-based PDs.
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Affiliation(s)
- Shunqiang Wang
- State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Road, Nanjing 210023, China
| | - Zeyao Han
- State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Road, Nanjing 210023, China
| | - Li Zhang
- State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Road, Nanjing 210023, China
| | - Yi Shi
- State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Road, Nanjing 210023, China
| | - Shuang Cao
- State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Road, Nanjing 210023, China
| | - Yong Chen
- State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Road, Nanjing 210023, China
| | - Zijian Deng
- Institute of Artificial Photosynthesis, State Key Laboratory of Fine Chemicals, DUT-KTH Joint Education and Research Centre on Molecular Devices, Dalian University of Technology (DUT), 2 Linggong Road, Dalian 116024, China
| | - Xichuan Yang
- Institute of Artificial Photosynthesis, State Key Laboratory of Fine Chemicals, DUT-KTH Joint Education and Research Centre on Molecular Devices, Dalian University of Technology (DUT), 2 Linggong Road, Dalian 116024, China
| | - Junyu Li
- Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
| | - Bin Sun
- State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Road, Nanjing 210023, China
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3
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Yang W, Jo SH, Lee TW. Perovskite Colloidal Nanocrystal Solar Cells: Current Advances, Challenges, and Future Perspectives. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2401788. [PMID: 38708900 DOI: 10.1002/adma.202401788] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/02/2024] [Revised: 04/06/2024] [Indexed: 05/07/2024]
Abstract
The power conversion efficiencies (PCEs) of polycrystalline perovskite (PVK) solar cells (SCs) (PC-PeSCs) have rapidly increased. However, PC-PeSCs are intrinsically unstable without encapsulation, and their efficiency drops during large-scale production; these problems hinder the commercial viability of PeSCs. Stability can be increased by using colloidal PVK nanocrystals (c-PeNCs), which have high surface strains, low defect density, and exceptional crystal quality. The use of c-PeNCs separates the crystallization process from the film formation process, which is preponderant in large-scale fabrication. Consequently, the use of c-PeNCs has substantial potential to overcome challenges encountered when fabricating PC-PeSCs. Research on colloidal nanocrystal-based PVK SCs (NC-PeSCs) has increased their PCEs to a level greater than those of other quantum-dot SCs, but has not reached the PCEs of PC-PeSCs; this inferiority significantly impedes widespread application of NC-PeSCs. This review first introduces the distinctive properties of c-PeNCs, then the strategies that have been used to achieve high-efficiency NC-PeSCs. Then it discusses in detail the persisting challenges in this domain. Specifically, the major challenges and solutions for NC-PeSCs related to low short-circuit current density Jsc are covered. Last, the article presents a perspective on future research directions and potential applications in the realm of NC-PeSCs.
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Affiliation(s)
- Wenqiang Yang
- Institute of Atomic Manufacturing, International Research Institute for Multidisciplinary Science, Beihang University, Beijing, 100191, China
- Department of Materials Science and Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Seung-Hyeon Jo
- Department of Materials Science and Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Tae-Woo Lee
- Department of Materials Science and Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
- Research Institute of Advanced Materials, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
- Interdisciplinary program in Bioengineering, Institute of Engineering Research, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
- Soft Foundry, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea
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4
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Park M, Lim C, Lee H, Kang B, Hwang HW, Kim SK, Lee P, Kim W, Yu H, Kim T. Sn-Doped Zinc Oxide as an Electron Transporting Layer for Enhanced Performance in PbS Quantum Dot Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2024; 16:32375-32384. [PMID: 38869189 DOI: 10.1021/acsami.4c04128] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2024]
Abstract
Colloidal PbS quantum dot solar cells (QDSCs) have been primarily demonstrated in n-i-p structures by incorporating a solution-processed ZnO electron transporting layer (ETL). Nevertheless, the inherent energy barrier for the electron extraction at the ZnO/PbS junction along with the defective nature significantly diminishes the performance of the PbS QDSCs. In this study, by employing Sn-doped ZnO (ZTO) ETL, we have tuned the conduction band offset at the junction from spike-type to cliff-type so that the electron extraction barrier can be eliminated and the overall photovoltaic parameters can be enhanced (open-circuit voltage of 0.7 V, fill factor over 70%, and efficiency of 11.3%) as compared with the counterpart with the undoped ZnO ETL. The X-ray photoelectron spectroscopy (XPS) analysis revealed a mitigation of oxygen vacancies in the ZTO ETL of our PbS QDSCs. Our work signifies the importance of Sn doping into the conventional ZnO ETL for the superior electron extraction in PbS QDSCs.
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Affiliation(s)
- Minji Park
- Advanced Photovoltaics Research Center, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
| | - Chanwoo Lim
- Advanced Photovoltaics Research Center, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
- Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Hyejin Lee
- Advanced Photovoltaics Research Center, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
- Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Byungsoo Kang
- Advanced Photovoltaics Research Center, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
| | - Hyun Wook Hwang
- Department of Energy Systems Research, Ajou University, 206 Worldcup-ro, Suwon 16499, Republic of Korea
| | - Seok Ki Kim
- Department of Energy Systems Research, Ajou University, 206 Worldcup-ro, Suwon 16499, Republic of Korea
| | - Phillip Lee
- Advanced Photovoltaics Research Center, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
| | - Woong Kim
- Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Hyeonggeun Yu
- Advanced Photovoltaics Research Center, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
- Division of Nanoscience and Technology, University of Science and Technology (UST), KIST School, Seoul 02792, Republic of Korea
| | - Taehee Kim
- Advanced Photovoltaics Research Center, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
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5
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Chiu A, Lu C, Kachman DE, Rong E, Chintapalli SM, Lin Y, Khurgin D, Thon SM. Role of the ZnO electron transport layer in PbS colloidal quantum dot solar cell yield. NANOSCALE 2024; 16:8273-8285. [PMID: 38592692 DOI: 10.1039/d3nr06558h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/10/2024]
Abstract
The development of lead sulfide (PbS) colloidal quantum dot (CQD) solar cells has led to significant power conversion efficiency (PCE) improvements in recent years, with record efficiencies now over 15%. Many of the recent advances in improving PCE have focused on improving the interface between the PbS CQD active layer and the zinc oxide (ZnO) electron transport layer (ETL). Proper optimization of the ZnO ETL also increases yield, or the percentage of functioning devices per fabrication run. Simultaneous improvements in both PCE and yield will be critical as the field approaches commercialization. This review highlights recent advances in the synthesis of ZnO ETLs and discusses the impact and critical role of ZnO synthesis conditions on the PCE and yield of PbS CQD solar cells.
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Affiliation(s)
- Arlene Chiu
- Department of Electrical and Computer Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, Maryland, 21218, USA.
| | - Chengchangfeng Lu
- Department of Electrical and Computer Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, Maryland, 21218, USA.
| | - Dana E Kachman
- Department of Electrical and Computer Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, Maryland, 21218, USA.
| | - Eric Rong
- Department of Electrical and Computer Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, Maryland, 21218, USA.
| | - Sreyas M Chintapalli
- Department of Electrical and Computer Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, Maryland, 21218, USA.
| | - Yida Lin
- Department of Electrical and Computer Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, Maryland, 21218, USA.
| | - Daniel Khurgin
- Department of Electrical and Computer Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, Maryland, 21218, USA.
| | - Susanna M Thon
- Department of Electrical and Computer Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, Maryland, 21218, USA.
- Department of Materials Science and Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, Maryland, 21218, USA
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6
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Wang H, Pinna J, Romero DG, Di Mario L, Koushki RM, Kot M, Portale G, Loi MA. PbS Quantum Dots Ink with Months-Long Shelf-Lifetime Enabling Scalable and Efficient Short-Wavelength Infrared Photodetectors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2311526. [PMID: 38327037 DOI: 10.1002/adma.202311526] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/01/2023] [Revised: 01/21/2024] [Indexed: 02/09/2024]
Abstract
The phase-transfer ligand exchange of PbS quantum dots (QDs) has substantially simplified device fabrication giving hope for future industrial exploitation. However, this technique when applied to QDs of large size (>4 nm) gives rise to inks with poor colloidal stability, thus hindering the development of QDs photodetectors in short-wavelength infrared range. Here, it is demonstrated that methylammonium lead iodide ligands can provide sufficient passivation of PbS QDs of size up to 6.7 nm, enabling inks with a minimum of ten-week shelf-life time, as proven by optical absorption and solution-small angle X-ray scattering. Furthermore, the maximum linear electron mobility of 4.7 × 10-2 cm2 V-1 s-1 is measured in field-effect transistors fabricated with fresh inks, while transistors fabricated with the same solution after ten-week storage retain 74% of the average starting electron mobility, demonstrating the outstanding quality both of the fresh and aged inks. Finally, photodetectors fabricated via blade-coating exhibit 76% external quantum efficiency at 1300 nm and 1.8 × 1012 Jones specific detectivity, values comparable with devices fabricated using ink with lower stability and wasteful methods such as spin-coating.
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Affiliation(s)
- Han Wang
- Photophysics and OptoElectronics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen, 9747 AG, The Netherlands
| | - Jacopo Pinna
- Photophysics and OptoElectronics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen, 9747 AG, The Netherlands
| | - David Garcia Romero
- Photophysics and OptoElectronics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen, 9747 AG, The Netherlands
| | - Lorenzo Di Mario
- Photophysics and OptoElectronics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen, 9747 AG, The Netherlands
| | - Razieh Mehrabi Koushki
- Photophysics and OptoElectronics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen, 9747 AG, The Netherlands
| | - Mordechai Kot
- Photophysics and OptoElectronics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen, 9747 AG, The Netherlands
| | - Giuseppe Portale
- Photophysics and OptoElectronics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen, 9747 AG, The Netherlands
| | - Maria Antonietta Loi
- Photophysics and OptoElectronics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen, 9747 AG, The Netherlands
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7
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Choi YK, Kim TH, Jung BK, Park T, Lee YM, Oh S, Choi HJ, Park J, Bae SI, Lee Y, Shim JW, Park HY, Oh SJ. High-Performance Self-Powered Quantum Dot Infrared Photodetector with Azide Ion Solution Treated Electron Transport Layer. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2308375. [PMID: 38073328 DOI: 10.1002/smll.202308375] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/21/2023] [Revised: 11/15/2023] [Indexed: 05/03/2024]
Abstract
The demand for self-powered photodetectors (PDs) capable of NIR detection without external power is growing with the advancement of NIR technologies such as LIDAR and object recognition. Lead sulfide quantum dot-based photodetectors (PbS QPDs) excel in NIR detection; however, their self-powered operation is hindered by carrier traps induced by surface defects and unfavorable band alignment in the zinc oxide nanoparticle (ZnO NP) electron-transport layer (ETL). In this study, an effective azide-ion (N3 -) treatment is introduced on a ZnO NP ETL to reduce the number of traps and improve the band alignment in a PbS QPD. The ZnO NP ETL treated with azide ions exhibited notable improvements in carrier lifetime and mobility as well as an enhanced internal electric field within the thin-film heterojunction of the ZnO NPs and PbS QDs. The azide-ion-treated PbS QPD demonstrated a increase in short-circuit current density upon NIR illumination, marking a responsivity of 0.45 A W-1, specific detectivity of 4 × 1011 Jones at 950 nm, response time of 8.2 µs, and linear dynamic range of 112 dB.
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Affiliation(s)
- Young Kyun Choi
- Department of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Tae Hyuk Kim
- School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Byung Ku Jung
- Department of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Taesung Park
- Department of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Yong Min Lee
- Department of Semiconductor Systems Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Seongkeun Oh
- Department of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Hyung Jin Choi
- Department of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Junhyeok Park
- Department of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Sang-In Bae
- Samsung Electronics Co. Ltd, Yongin-si, 17113, Republic of Korea
| | - YunKi Lee
- Samsung Electronics Co. Ltd, Yongin-si, 17113, Republic of Korea
| | - Jae Won Shim
- School of Electrical Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Hye Yeon Park
- Samsung Electronics Co. Ltd, Yongin-si, 17113, Republic of Korea
| | - Soong Ju Oh
- Department of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea
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Wang M, Liu S, Wei A, Luo T, Wen X, Li MY, Lu H. Effective Charge Collection of Electron Transport Layers for High-Performance Quantum Dot Infrared Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38690767 DOI: 10.1021/acsami.4c02069] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2024]
Abstract
Infrared (IR) solar cells, capable of converting low-energy IR photons to electron-hole pairs, are promising optoelectronic devices by broadening the utilization range of the solar spectrum to the short-wavelength IR region. The emerging PbS colloidal quantum dot (QD) IR solar cells attract much attention due to their tunable band gaps in the IR region, potential multiple exciton generation, and facile solution processing. In PbS QD solar cells, ZnO is commonly utilized as an electron transport layer (ETL) to establish a depleted heterostructure with a QD photoactive layer. However, band gap shrinkage of large PbS QDs makes it necessary to tailor the behaviors of the ZnO ETL for efficient carrier extraction in the devices. Herein, the characteristics of ZnO ETL are efficiently and flexibly tailored to match the QD layer by handily adjusting the postannealing process of ZnO ETL. With a suitable temperature, the well-matched energy level alignment and suppressed trap states are simultaneously achieved in the ZnO ETL, effectively reducing the nonradiative recombination and accelerating the electron injection from the QD layer to ETL. As a consequence, a high-performance PbS QD photovoltaic device with power conversion efficiencies (PCEs) of 10.09% and 1.37% is obtained under AM 1.5 and 1100 nm filtered solar illumination, demonstrating a simple and effective approach for achieving high-performance IR photoelectric devices.
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Affiliation(s)
- Meng Wang
- School of Science, Wuhan University of Technology, Wuhan, Hubei 430070, China
| | - Sisi Liu
- School of Science, Wuhan University of Technology, Wuhan, Hubei 430070, China
| | - Aoshen Wei
- School of Science, Wuhan University of Technology, Wuhan, Hubei 430070, China
| | - Tianyu Luo
- School of Science, Wuhan University of Technology, Wuhan, Hubei 430070, China
| | - Xiaoyan Wen
- School of Science, Wuhan University of Technology, Wuhan, Hubei 430070, China
| | - Ming-Yu Li
- School of Science, Wuhan University of Technology, Wuhan, Hubei 430070, China
- Yangtzi Delta Region Institute of University of Electronic Science and Technology of China, Huzhou, Zhejiang 313098, China
| | - Haifei Lu
- School of Science, Wuhan University of Technology, Wuhan, Hubei 430070, China
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9
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Yang B, Cang J, Li Z, Chen J. Nanocrystals as performance-boosting materials for solar cells. NANOSCALE ADVANCES 2024; 6:1331-1360. [PMID: 38419867 PMCID: PMC10898446 DOI: 10.1039/d3na01063e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/29/2023] [Accepted: 01/31/2024] [Indexed: 03/02/2024]
Abstract
Nanocrystals (NCs) have been widely studied owing to their distinctive properties and promising application in new-generation photoelectric devices. In photovoltaic devices, semiconductor NCs can act as efficient light harvesters for high-performance solar cells. Besides light absorption, NCs have shown great significance as functional layers for charge (hole and electron) transport and interface modification to improve the power conversion efficiency and stability of solar cells. NC-based functional layers can boost hole/electron transport ability, adjust energy level alignment between a light absorbing layer and charge transport layer, broaden the absorption range of an active layer, enhance intrinsic stability, and reduce fabrication cost. In this review, recent advances in NCs as a hole transport layer, electron transport layer, and interfacial layer are discussed. Additionally, NC additives to improve the performance of solar cells are demonstrated. Finally, a summary and future prospects of NC-based functional materials in solar cells are presented, addressing their limitations and suggesting potential solutions.
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Affiliation(s)
- Boping Yang
- College of Science, Guizhou Institute of Technology Guiyang 550003 China
| | - Junjie Cang
- School of Electrical Engineering, Yancheng Institute of Technology Yancheng 224051 China
| | - Zhiling Li
- College of Science, Guizhou Institute of Technology Guiyang 550003 China
| | - Jian Chen
- College of Artificial Intelligence and Electrical Engineering, Guizhou Institute of Technology Guiyang 550003 China
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10
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Chen Z, Li H, Yuan C, Gao P, Su Q, Chen S. Color Revolution: Prospects and Challenges of Quantum-Dot Light-Emitting Diode Display Technologies. SMALL METHODS 2024; 8:e2300359. [PMID: 37357153 DOI: 10.1002/smtd.202300359] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/18/2023] [Revised: 05/15/2023] [Indexed: 06/27/2023]
Abstract
Light-emitting diodes (LEDs) based on colloidal quantum-dots (QDs) such as CdSe, InP, and ZnSeTe feature a unique advantage of narrow emission linewidth of ≈20 nm, which can produce highly accurate colors, making them a highly promising technology for the realization of displays with Rec. 2020 color gamut. With the rapid development in the past decades, the performances of red and green QLEDs have been remarkably improved, and their efficiency and lifetime can almost meet industrial requirements. However, the industrialization of QLED displays still faces many challenges; for example, (1) the device mechanisms including the charge injection/transport/leakage, exciton quenching, and device degradation are still unclear, which fundamentally limit QLED performance improvement; (2) the blue performances including the efficiency, chromaticity, and stability are relatively low, which are still far from the requirements of practical applications; (3) the color patterning processes including the ink-jet printing, transfer printing, and photolithography are still immature, which restrict the manufacturing of high resolution full-color QLED displays. Here, the recent advancements attempting to address the above challenges of QLED displays are specifically reviewed. After a brief overview of QLED development history, device structure/principle, and performances, the main focus is to investigate the recent discoveries on device mechanisms with an emphasis on device degradation. Then recent progress is introduced in blue QLEDs and color patterning. Finally, the opportunities, challenges, solutions, and future research directions of QLED displays are summarized.
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Affiliation(s)
- Zinan Chen
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Haotao Li
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Cuixia Yuan
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Peili Gao
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Qiang Su
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Shuming Chen
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
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11
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He J, Ge Y, Wang Y, Yuan M, Xia H, Zhang X, Chen X, Wang X, Zhou X, Li K, Chen C, Tang J. Fluoride passivation of ZnO electron transport layers for efficient PbSe colloidal quantum dot photovoltaics. FRONTIERS OF OPTOELECTRONICS 2023; 16:28. [PMID: 37889375 PMCID: PMC10611680 DOI: 10.1007/s12200-023-00082-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/17/2023] [Accepted: 09/08/2023] [Indexed: 10/28/2023]
Abstract
Lead selenide (PbSe) colloidal quantum dots (CQDs) are suitable for the development of the next-generation of photovoltaics (PVs) because of efficient multiple-exciton generation and strong charge coupling ability. To date, the reported high-efficient PbSe CQD PVs use spin-coated zinc oxide (ZnO) as the electron transport layer (ETL). However, it is found that the surface defects of ZnO present a difficulty in completion of passivation, and this impedes the continuous progress of devices. To address this disadvantage, fluoride (F) anions are employed for the surface passivation of ZnO through a chemical bath deposition method (CBD). The F-passivated ZnO ETL possesses decreased densities of oxygen vacancy and a favorable band alignment. Benefiting from these improvements, PbSe CQD PVs report an efficiency of 10.04%, comparatively 9.4% higher than that of devices using sol-gel (SG) ZnO as ETL. We are optimistic that this interface passivation strategy has great potential in the development of solution-processed CQD optoelectronic devices.
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Affiliation(s)
- Jungang He
- Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, Hubei Engineering Technology Research Center of Optoelectronic and New Energy Materials, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, 430205, China.
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430074, China.
| | - You Ge
- Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, Hubei Engineering Technology Research Center of Optoelectronic and New Energy Materials, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, 430205, China
| | - Ya Wang
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Mohan Yuan
- Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, Hubei Engineering Technology Research Center of Optoelectronic and New Energy Materials, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, 430205, China
| | - Hang Xia
- Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, Hubei Engineering Technology Research Center of Optoelectronic and New Energy Materials, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, 430205, China
| | - Xingchen Zhang
- Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, Hubei Engineering Technology Research Center of Optoelectronic and New Energy Materials, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, 430205, China
| | - Xiao Chen
- Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, Hubei Engineering Technology Research Center of Optoelectronic and New Energy Materials, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, 430205, China
| | - Xia Wang
- Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, Hubei Engineering Technology Research Center of Optoelectronic and New Energy Materials, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, 430205, China
| | - Xianchang Zhou
- Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, Hubei Engineering Technology Research Center of Optoelectronic and New Energy Materials, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, 430205, China
| | - Kanghua Li
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430074, China.
| | - Chao Chen
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic Information, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430074, China
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12
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Lee J, Kim B, Kim C, Lee MH, Kozakci I, Cho S, Kim B, Lee SY, Kim J, Oh J, Lee JY. Unlocking the Potential of Colloidal Quantum Dot/Organic Hybrid Solar Cells: Band Tunable Interfacial Layer Approach. ACS APPLIED MATERIALS & INTERFACES 2023; 15:39408-39416. [PMID: 37555937 DOI: 10.1021/acsami.3c08419] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/10/2023]
Abstract
Hybrid colloidal quantum dot (CQD)/organic architectures are promising candidates for emerging optoelectronic devices having high performance and inexpensive fabrication. For unlocking the potential of CQD/organic hybrid devices, enhancing charge extraction properties at electron transport layer (ETL)/CQD interfaces is crucial. Hence, we carefully adjust the interface properties between the ETL and CQD layer by incorporating an interfacial layer for the ETL (EIL) using several types of cinnamic acid ligands. The EIL having a cascading band offset (ΔEC) between the ETL and CQD layer suppresses the potential barrier and the local charge accumulation at ETL/CQD interfaces, thereby reducing the bimolecular recombination. An optimal EIL effectively expands the depletion region that facilitates charge extraction between the ETL and CQD layer while preventing the formation of shallow traps. Representative devices with an EIL exhibit a maximum power conversion efficiency of 14.01% and retain over 80% of initial performances after 300 h under continuous maximum power point operation.
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Affiliation(s)
- Jihyung Lee
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Byeongsu Kim
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Changjo Kim
- Information and Electronics Research Institute, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Min-Ho Lee
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Irem Kozakci
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Sungjun Cho
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Beomil Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Sang Yeon Lee
- Information and Electronics Research Institute, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Junho Kim
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Jihun Oh
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Jung-Yong Lee
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
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13
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Fang S, Huang J, Tao R, Wei Q, Ding X, Yajima S, Chen Z, Zhu W, Liu C, Li Y, Yin N, Song L, Liu Y, Shi G, Wu H, Gao Y, Wen X, Chen Q, Shen Q, Li Y, Liu Z, Li Y, Ma W. Open-Shell Diradical-Sensitized Electron Transport Layer for High-Performance Colloidal Quantum Dot Solar Cells. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2212184. [PMID: 36870078 DOI: 10.1002/adma.202212184] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/27/2022] [Revised: 02/17/2023] [Indexed: 05/26/2023]
Abstract
The zinc oxide (ZnO) nanoparticles (NPs) are well-documented as an excellent electron transport layer (ETL) in optoelectronic devices. However, the intrinsic surface flaw of the ZnO NPs can easily result in serious surface recombination of carriers. Exploring effective passivation methods of ZnO NPs is essential to maximize the device's performance. Herein, a hybrid strategy is explored for the first time to improve the quality of ZnO ETL by incorporating stable organic open-shell donor-acceptor type diradicaloids. The high electron-donating feature of the diradical molecules can efficiently passivate the deep-level trap states and improve the conductivity of ZnO NP film. The unique advantage of the radical strategy is that its passivation effectiveness is highly correlated with the electron-donating ability of radical molecules, which can be precisely controlled by the rational design of molecular chemical structures. The well-passivated ZnO ETL is applied in lead sulfide (PbS) colloidal quantum dot solar cells, delivering a power conversion efficiency of 13.54%. More importantly, as a proof-of-concept study, this work will inspire the exploration of general strategies using radical molecules to construct high-efficiency solution-processed optoelectronic devices.
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Affiliation(s)
- Shiwen Fang
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, China
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Jiaxing Huang
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Ran Tao
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, China
| | - Qi Wei
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Xiaobo Ding
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, China
| | - Shota Yajima
- Faculty of Informatics and Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo, 182-8585, Japan
| | - Zhongxin Chen
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Weiya Zhu
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Cheng Liu
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, China
| | - Yusheng Li
- Faculty of Informatics and Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo, 182-8585, Japan
| | - Ni Yin
- i-Lab, CAS Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Suzhou, 215123, China
| | - Leliang Song
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, China
| | - Yang Liu
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, China
| | - Guozheng Shi
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, China
| | - Hao Wu
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, China
| | - Yiyuan Gao
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, China
| | - Xin Wen
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, China
| | - Qi Chen
- i-Lab, CAS Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Suzhou, 215123, China
| | - Qing Shen
- Faculty of Informatics and Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo, 182-8585, Japan
| | - Youyong Li
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, China
| | - Zeke Liu
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, China
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Yuan Li
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Wanli Ma
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, China
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
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14
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van Embden J, Gross S, Kittilstved KR, Della Gaspera E. Colloidal Approaches to Zinc Oxide Nanocrystals. Chem Rev 2023; 123:271-326. [PMID: 36563316 DOI: 10.1021/acs.chemrev.2c00456] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/24/2022]
Abstract
Zinc oxide is an extensively studied semiconductor with a wide band gap in the near-UV. Its many interesting properties have found use in optics, electronics, catalysis, sensing, as well as biomedicine and microbiology. In the nanoscale regime the functional properties of ZnO can be precisely tuned by manipulating its size, shape, chemical composition (doping), and surface states. In this review, we focus on the colloidal synthesis of ZnO nanocrystals (NCs) and provide a critical analysis of the synthetic methods currently available for preparing ZnO colloids. First, we outline key thermodynamic considerations for the nucleation and growth of colloidal nanoparticles, including an analysis of different reaction methodologies and of the role of dopant ions on nanoparticle formation. We then comprehensively review and discuss the literature on ZnO NC systems, including reactions in polar solvents that traditionally occur at low temperatures upon addition of a base, and high temperature reactions in organic, nonpolar solvents. A specific section is dedicated to doped NCs, highlighting both synthetic aspects and structure-property relationships. The versatility of these methods to achieve morphological and compositional control in ZnO is explicated. We then showcase some of the key applications of ZnO NCs, both as suspended colloids and as deposited coatings on supporting substrates. Finally, a critical analysis of the current state of the art for ZnO colloidal NCs is presented along with existing challenges and future directions for the field.
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Affiliation(s)
- Joel van Embden
- School of Science, RMIT University, MelbourneVictoria, 3001, Australia
| | - Silvia Gross
- Dipartimento di Scienze Chimiche, Università degli Studi di Padova, 35131Padova, Italy.,Karlsruher Institut für Technologie (KIT), Institut für Technische Chemie und Polymerchemie (ITCP), Engesserstrasse 20, 76131Karlsruhe, Germany
| | - Kevin R Kittilstved
- Department of Chemistry, University of Massachusetts Amherst, Amherst, Massachusetts01003, United States
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15
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Influence of ZIF-8 modification on performance of ZnO-based dye-sensitized solar cells. J Solid State Electrochem 2022. [DOI: 10.1007/s10008-022-05297-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/10/2022]
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16
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Improving the photovoltaic performance for PbS QD thin film solar cells through interface engineering. J Colloid Interface Sci 2022; 627:562-568. [PMID: 35870408 DOI: 10.1016/j.jcis.2022.07.064] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/20/2022] [Revised: 07/05/2022] [Accepted: 07/09/2022] [Indexed: 11/21/2022]
Abstract
Interfaces exist between functional layers inside thin film optoelectronic devices, and it is very important to minimize the energy loss when electrons move across the interfaces to improve the photovoltaic performance. For PbS quantum dots (QDs) solar cells with the classical n-i-p device architecture, it is particularly challenging to tune the electron transfer process due to limited material choices for each functional layer. Here, we introduce materials to tune the electron transfer across the three interfaces inside the PbS-QD solar cell: (1) the interface between the ZnO electron transport layer and the n-type iodide capped PbS QD layer (PbS-I QD layer), (2) the interface between the n-type PbS-I layer and the p-type 1,2-ethanedithiol (EDT) treated PbS QD layer (PbS-EDT QD layer), (3) the interface between the PbS-EDT layer and the Au electrode. After passivating the ZnO layer through APTES treating; tuning the band alignment through varying the QD size of PbS -EDT QD layer and a carbazole layer to tune the hole transport process, a power conversion efficiency of 9.23% (Voc of 0.62 V) under simulated AM1.5 sunlight is demonstrated for PbS QD solar cells. Our results highlights the profound influence of interface engineering on the electron transfer inside the PbS QD solar cells, exemplified by its impact on the photovoltaic performance of PbS QD devices.
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17
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Meresa AA, Lee TW, Lee S, Kim FS, Park K. Tetraaryldiamine-based electron-transporting interlayers for performance and stability enhancement of organic solar cells. J IND ENG CHEM 2022. [DOI: 10.1016/j.jiec.2022.06.021] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/25/2022]
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18
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Zhao Q, Han R, Marshall AR, Wang S, Wieliczka BM, Ni J, Zhang J, Yuan J, Luther JM, Hazarika A, Li GR. Colloidal Quantum Dot Solar Cells: Progressive Deposition Techniques and Future Prospects on Large-Area Fabrication. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2107888. [PMID: 35023606 DOI: 10.1002/adma.202107888] [Citation(s) in RCA: 17] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/02/2021] [Revised: 12/18/2021] [Indexed: 06/14/2023]
Abstract
Colloidally grown nanosized semiconductors yield extremely high-quality optoelectronic materials. Many examples have pointed to near perfect photoluminescence quantum yields, allowing for technology-leading materials such as high purity color centers in display technology. Furthermore, because of high chemical yield, and improved understanding of the surfaces, these materials, particularly colloidal quantum dots (QDs) can also be ideal candidates for other optoelectronic applications. Given the urgent necessity toward carbon neutrality, electricity from solar photovoltaics will play a large role in the power generation sector. QDs are developed and shown dramatic improvements over the past 15 years as photoactive materials in photovoltaics with various innovative deposition properties which can lead to exceptionally low-cost and high-performance devices. Once the key issues related to charge transport in optically thick arrays are addressed, QD-based photovoltaic technology can become a better candidate for practical application. In this article, the authors show how the possibilities of different deposition techniques can bring QD-based solar cells to the industrial level and discuss the challenges for perovskite QD solar cells in particular, to achieve large-area fabrication for further advancing technology to solve pivotal energy and environmental issues.
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Affiliation(s)
- Qian Zhao
- School of Materials Science and Engineering, Nankai University, Tianjin, 300350, China
| | - Rui Han
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, China
| | - Ashley R Marshall
- Condensed Matter Physics Department of Physics, University of Oxford, Parks Road, Oxford, OX13PU, UK
| | - Shuo Wang
- School of Materials Science and Engineering, Nankai University, Tianjin, 300350, China
| | | | - Jian Ni
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, China
| | - Jianjun Zhang
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, China
| | - Jianyu Yuan
- Institute of Functional Nano and Soft Materials Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, 215123, China
| | - Joseph M Luther
- National Renewable Energy Laboratory, Golden, CO, 80401, USA
| | - Abhijit Hazarika
- Polymers and Functional Materials Division, CSIR-Indian Institute of Chemical Technology, Uppal Road, Tarnaka, Hyderabad, 500007, India
| | - Guo-Ran Li
- School of Materials Science and Engineering, Nankai University, Tianjin, 300350, China
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19
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Xiao Y, Wang H, Awai F, Shibayama N, Kubo T, Segawa H. Emission Spectroscopy Investigation of the Enhancement of Carrier Collection Efficiency in AgBiS 2-Nanocrystal/ZnO-Nanowire Heterojunction Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2022; 14:6994-7003. [PMID: 35099930 DOI: 10.1021/acsami.1c21762] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Eco-friendly solar cells were fabricated using interdigitated layers comprising ZnO nanowires (NWs) and infrared absorbing AgBiS2 nanocrystals (ITO/ZnO NWs/AgBiS2/P3HT/Au). The quality of ZnO NWs was studied using photoluminescence and Raman spectroscopy to identify the defects in ZnO NWs influencing solar cell performance. Oxygen vacancies and Zn interstitial sites, among various recombination sites, were observed to be the main sites for carrier recombination, which hinders the carrier collection in the solar cells. Accordingly, the power conversion efficiency of AgBiS2 solar cells exhibited a good correlation with the number of oxygen vacancies. The structural order and electron-phonon interaction in ZnO NWs were also investigated via Raman scattering spectroscopy. A lower concentration of oxygen vacancies and zinc interstitials (Zni) resulted in a higher structural order as well as a weaker electron-phonon interaction in ZnO NWs. When ZnO NWs were treated at 500 °C in oxygen with the lowest oxygen vacancy concentration, the solar cells (500-O2 solar cell (SC)) demonstrated an external quantum efficiency of approximately 70% in the visible region and a corresponding internal quantum efficiency of more than 80%. The 500-O2 SC exhibited a power conversion efficiency of 5.41% (JSC = 22.21 mA/cm2, VOC = 0.41 V, and FF = 60%) under quasi one-sun illumination. New methods that can efficiently reduce oxygen vacancies and Zni without affecting the structural order of ZnO NWs would further enhance the carrier collection efficiency. Moreover, since ZnO is a key electron transport material for constructing not only colloidal quantum dot solar cells but also other emerging solar cells, such as organic thin-film solar cells, the present findings provide significant information for improving their performance.
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Affiliation(s)
- Yun Xiao
- Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan
| | - Haibin Wang
- Graduate School Arts & Sciences, The University of Tokyo, 3-8-1 Komaba, Meguro-ku, Tokyo 153-8902, Japan
| | - Fumiyasu Awai
- Graduate School Arts & Sciences, The University of Tokyo, 3-8-1 Komaba, Meguro-ku, Tokyo 153-8902, Japan
| | - Naoyuki Shibayama
- Graduate School Arts & Sciences, The University of Tokyo, 3-8-1 Komaba, Meguro-ku, Tokyo 153-8902, Japan
| | - Takaya Kubo
- Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan
| | - Hiroshi Segawa
- Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan
- Graduate School Arts & Sciences, The University of Tokyo, 3-8-1 Komaba, Meguro-ku, Tokyo 153-8902, Japan
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20
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Yuan M, Wang X, Chen X, He J, Li K, Song B, Hu H, Gao L, Lan X, Chen C, Tang J. Phase-Transfer Exchange Lead Chalcogenide Colloidal Quantum Dots: Ink Preparation, Film Assembly, and Solar Cell Construction. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2102340. [PMID: 34561947 DOI: 10.1002/smll.202102340] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/22/2021] [Revised: 07/23/2021] [Indexed: 06/13/2023]
Abstract
Solution-processed colloidal quantum dots (CQDs) are promising candidates for the third-generation photovoltaics due to their low cost and spectral tunability. The development of CQD solar cells mainly relies on high-quality CQD ink, smooth and dense film, and charge-extraction-favored device architectures. In particular, advances in the processing of CQDs are essential for high-quality QD solids. The phase transfer exchange (PTE), in contrast with traditional solid-state ligand exchange, has demonstrated to be the most promising approach for high-quality QD solids in terms of charge transport and defect passivation. As a result, the efficiencies of Pb chalcogenide CQD solar cells have been rapidly improved to 14.0%. In this review, the development of the PTE method is briefly reviewed for lead chalcogenide CQD ink preparation, film assembly, and device construction. Particularly, the key roles of lead halides and additional additives are emphasized for defect passivation and charge transport improvement. In the end, several potential directions for future research are proposed.
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Affiliation(s)
- Mohan Yuan
- Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, 430205, P. R. China
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Xia Wang
- Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, 430205, P. R. China
| | - Xiao Chen
- Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, 430205, P. R. China
| | - Jungang He
- Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, 430205, P. R. China
| | - Kanghua Li
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Boxiang Song
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Huicheng Hu
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Liang Gao
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Xinzheng Lan
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Chao Chen
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
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21
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Wang W, Zhang M, Pan Z, Biesold GM, Liang S, Rao H, Lin Z, Zhong X. Colloidal Inorganic Ligand-Capped Nanocrystals: Fundamentals, Status, and Insights into Advanced Functional Nanodevices. Chem Rev 2021; 122:4091-4162. [PMID: 34968050 DOI: 10.1021/acs.chemrev.1c00478] [Citation(s) in RCA: 21] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Colloidal nanocrystals (NCs) are intriguing building blocks for assembling various functional thin films and devices. The electronic, optoelectronic, and thermoelectric applications of solution-processed, inorganic ligand (IL)-capped colloidal NCs are especially promising as the performance of related devices can substantially outperform their organic ligand-capped counterparts. This in turn highlights the significance of preparing IL-capped NC dispersions. The replacement of initial bulky and insulating ligands capped on NCs with short and conductive inorganic ones is a critical step in solution-phase ligand exchange for preparing IL-capped NCs. Solution-phase ligand exchange is extremely appealing due to the highly concentrated NC inks with completed ligand exchange and homogeneous ligand coverage on the NC surface. In this review, the state-of-the-art of IL-capped NCs derived from solution-phase inorganic ligand exchange (SPILE) reactions are comprehensively reviewed. First, a general overview of the development and recent advancements of the synthesis of IL-capped colloidal NCs, mechanisms of SPILE, elementary reaction principles, surface chemistry, and advanced characterizations is provided. Second, a series of important factors in the SPILE process are offered, followed by an illustration of how properties of NC dispersions evolve after ILE. Third, surface modifications of perovskite NCs with use of inorganic reagents are overviewed. They are necessary because perovskite NCs cannot withstand polar solvents or undergo SPILE due to their soft ionic nature. Fourth, an overview of the research progresses in utilizing IL-capped NCs for a wide range of applications is presented, including NC synthesis, NC solid and film fabrication techniques, field effect transistors, photodetectors, photovoltaic devices, thermoelectric, and photoelectrocatalytic materials. Finally, the review concludes by outlining the remaining challenges in this field and proposing promising directions to further promote the development of IL-capped NCs in practical application in the future.
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Affiliation(s)
- Wenran Wang
- Key Laboratory for Biobased Materials and Energy of Ministry of Education, College of Materials and Energy, South China Agricultural University, 483 Wushan Road, Guangzhou 510642, China.,School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.,Guangdong Laboratory for Lingnan Modern Agriculture, Guangzhou 510642, China
| | - Meng Zhang
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Zhenxiao Pan
- Key Laboratory for Biobased Materials and Energy of Ministry of Education, College of Materials and Energy, South China Agricultural University, 483 Wushan Road, Guangzhou 510642, China.,Guangdong Laboratory for Lingnan Modern Agriculture, Guangzhou 510642, China
| | - Gill M Biesold
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Shuang Liang
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Huashang Rao
- Key Laboratory for Biobased Materials and Energy of Ministry of Education, College of Materials and Energy, South China Agricultural University, 483 Wushan Road, Guangzhou 510642, China.,Guangdong Laboratory for Lingnan Modern Agriculture, Guangzhou 510642, China
| | - Zhiqun Lin
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Xinhua Zhong
- Key Laboratory for Biobased Materials and Energy of Ministry of Education, College of Materials and Energy, South China Agricultural University, 483 Wushan Road, Guangzhou 510642, China.,Guangdong Laboratory for Lingnan Modern Agriculture, Guangzhou 510642, China
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22
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Light-emitting field-effect transistors with EQE over 20% enabled by a dielectric-quantum dots-dielectric sandwich structure. Sci Bull (Beijing) 2021; 67:529-536. [DOI: 10.1016/j.scib.2021.12.013] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/31/2021] [Revised: 10/17/2021] [Accepted: 12/07/2021] [Indexed: 11/19/2022]
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23
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Liu J, Xian K, Ye L, Zhou Z. Open-Circuit Voltage Loss in Lead Chalcogenide Quantum Dot Solar Cells. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2008115. [PMID: 34085736 DOI: 10.1002/adma.202008115] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/01/2020] [Revised: 01/09/2021] [Indexed: 06/12/2023]
Abstract
Lead chalcogenide colloidal quantum dot solar cells (CQDSCs) have received considerable attention due to their broad and tunable absorption and high stability. Presently, lead chalcogenide CQDSC has achieved a power conversion efficiency of ≈14%. However, the state-of-the-art lead chalcogenide CQDSC still has an open-circuit voltage (Voc ) loss of ≈0.45 V, which is significantly higher than those of c-Si and perovskite solar cells. Such high Voc loss severely limits the performance improvement and commercialization of lead chalcogenide CQDSCs. In this review, the Voc loss is first analyzed via detailed balance theory and the origin of Voc loss from both solar absorber and interface is summarized. Subsequently, various strategies for improving the Voc from the solar absorber, including the passivation strategies during the synthesis and ligand exchange are overviewed. The great impact of the ligand exchange process on CQD passivation is highlighted and the corresponding strategies to further reduce the Voc loss are summarized. Finally, various strategies are discussed to reduce interface Voc loss from charge transport layers. More importantly, the great potential of achieving performance breakthroughs via various organic hole transport layers is highlighted and the existing challenges toward commercialization are discussed.
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Affiliation(s)
- Junwei Liu
- School of Materials Science and Engineering, Tianjin University, Tianjin, 300350, China
- Tianjin Key Laboratory of Indoor Air Environmental Quality Control, School of Environmental Science and Engineering, Tianjin University, Tianjin, 300350, China
| | - Kaihu Xian
- School of Materials Science and Engineering, Tianjin University, Tianjin, 300350, China
| | - Long Ye
- School of Materials Science and Engineering, Tianjin University, Tianjin, 300350, China
| | - Zhihua Zhou
- Tianjin Key Laboratory of Indoor Air Environmental Quality Control, School of Environmental Science and Engineering, Tianjin University, Tianjin, 300350, China
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24
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Chen Z, Zhang Y, Teh ZL, Yang J, Yuan L, Conibeer GJ, Patterson RJ, Shen Q, Huang S, Zhang Z. Passivating Quantum Dot Carrier Transport Layer with Metal Salts. ACS APPLIED MATERIALS & INTERFACES 2021; 13:28679-28688. [PMID: 34101423 DOI: 10.1021/acsami.1c06410] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Quantum dots (QDs) have a wide range of applications in the field of optoelectronics. They have been playing multiple roles within the configuration of a device, by serving as the building blocks for both the active layer and the carrier transport layer. While the performance of various optoelectronic devices has been steadily improving via developments in passivating the QD active layer, the possible improvement via passivation of the QD-based carrier transport layer has been largely overlooked. Here, with lead sulfide QD photovoltaics as the platform of study, we demonstrate that the device performance can be significantly improved by passivating the QD hole transport layer (HTL) with zinc salt post-treatments. The power conversion efficiency is improved from 8.7% of the reference device to 10.2% and 9.5% for devices with zinc acetate (ZnAc)- and zinc iodide (ZnI2)-treated HTLs, respectively. Transient absorption spectroscopy confirms that both treatments effectively reduce band-tail states and increase carrier lifetime of the HTLs. Further elemental analysis shows that ZnAc provides a higher amount of Zn2+ for passivation while maintaining the function of HTL by allowing essential p-doping oxidation. In contrast, the additional I- passivation from ZnI2 inhibits p-doping oxidation and limits the function of HTL. This work demonstrates the potential of improving device performance by passivating the QD-based HTLs, and the method developed is likely applicable to other optoelectronic devices.
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Affiliation(s)
- Zihan Chen
- Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom
- Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales (UNSW), Sydney, New South Wales 2052, Australia
| | - Yaohong Zhang
- Faculty of Informatics and Engineering, The University of Electro-Communications, Tokyo 182-8585, Japan
- School of Physics, Northwest University, Xi'an Bai North Road No. 229, Xi'an 710069, China
| | - Zhi Li Teh
- Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales (UNSW), Sydney, New South Wales 2052, Australia
| | - Jianfeng Yang
- Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales (UNSW), Sydney, New South Wales 2052, Australia
| | - Lin Yuan
- School of Engineering, Macquarie University Sustainable Energy Research Centre, Macquarie University, Sydney, New South Wales 2109, Australia
| | - Gavin J Conibeer
- Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales (UNSW), Sydney, New South Wales 2052, Australia
| | - Robert J Patterson
- Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales (UNSW), Sydney, New South Wales 2052, Australia
| | - Qing Shen
- Faculty of Informatics and Engineering, The University of Electro-Communications, Tokyo 182-8585, Japan
| | - Shujuan Huang
- School of Engineering, Macquarie University Sustainable Energy Research Centre, Macquarie University, Sydney, New South Wales 2109, Australia
| | - Zhilong Zhang
- Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom
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25
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Cao F, Wu Q, Sui Y, Wang S, Dou Y, Hua W, Kong L, Wang L, Zhang J, Jiang T, Yang X. All-Inorganic Quantum Dot Light-Emitting Diodes with Suppressed Luminance Quenching Enabled by Chloride Passivated Tungsten Phosphate Hole Transport Layers. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2100030. [PMID: 33783126 DOI: 10.1002/smll.202100030] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/04/2021] [Revised: 02/08/2021] [Indexed: 06/12/2023]
Abstract
Although excellent performance such as high efficiency and stability have been achieved in quantum dot (QD)-based light-emitting diodes (QLEDs) possessing an organic/inorganic hybrid device structure, the highly expected all-inorganic QLEDs remain at the bottleneck stage in recent years, resulting from the luminance quenching of QDs caused by inorganic hole transport layer (HTL) and unbalanced charge injection due to large energy barrier for injecting holes from HTL to QDs. Here, it is reported that the solution-processed inorganic environmentally friendly chloride (Cl)-passivated tungsten phosphate (Cl@TPA) films serve as HTL. The incorporation of Cl in TPA effectively passivates the oxygen vacancies, which not only avoids the luminescence quenching of QDs by reducing carrier concentration but also facilitates the hole injection from HTL to QDs with a favorable electronic band alignment, thus achieving the record external quantum efficiency of ≈9.27%, among all previous reports about all-inorganic QLEDs. Most importantly, the resulting all-inorganic QLEDs with Cl@TPA exhibit a substantial improvement in the operational lifetime (T50 > 105 h under an initial luminance of 100 cd m-2 ), which is almost 30-fold higher than the devices with TPA HTL. This work furnishes a promising strategy for highly efficient and stable QLEDs based on inorganic device structure.
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Affiliation(s)
- Fan Cao
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410073, China
| | - Qianqian Wu
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, 149 Yanchang Road, Shanghai, 200072, China
| | - Yizhen Sui
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410073, China
| | - Sheng Wang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, 149 Yanchang Road, Shanghai, 200072, China
| | - Yongjiang Dou
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, 149 Yanchang Road, Shanghai, 200072, China
| | - Weihong Hua
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410073, China
| | - Lingmei Kong
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, 149 Yanchang Road, Shanghai, 200072, China
| | - Lin Wang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, 149 Yanchang Road, Shanghai, 200072, China
| | - Jianhua Zhang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, 149 Yanchang Road, Shanghai, 200072, China
| | - Tian Jiang
- College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410073, China
| | - Xuyong Yang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, 149 Yanchang Road, Shanghai, 200072, China
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26
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Lim S, Kim J, Park JY, Min J, Yun S, Park T, Kim Y, Choi J. Suppressed Degradation and Enhanced Performance of CsPbI 3 Perovskite Quantum Dot Solar Cells via Engineering of Electron Transport Layers. ACS APPLIED MATERIALS & INTERFACES 2021; 13:6119-6129. [PMID: 33499586 DOI: 10.1021/acsami.0c15484] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2023]
Abstract
CsPbI3 perovskite quantum dots (CsPbI3-PQDs) have recently come into focus as a light-harvesting material that can act as a platform through which to combine the material advantages of both perovskites and QDs. However, the low cubic-phase stability of CsPbI3-PQDs in ambient conditions has been recognized as a factor that inhibits device stability. TiO2 nanoparticles are the most regularly used materials as an electron transport layer (ETL) in CsPbI3-PQD photovoltaics; however, we found that TiO2 can facilitate the cubic-phase degradation of CsPbI3-PQDs due to its vigorous photocatalytic activity. To address these issues, we have developed chloride-passivated SnO2 QDs (Cl@SnO2 QDs), which have low photocatalytic activity and few surface traps, to suppress the cubic-phase degradation of CsPbI3-PQDs. Given these advantages, the CsPbI3-PQD solar cells based on Cl@SnO2 ETLs show significantly improved device operational stability (under conditions of 50% relative humidity and 1-sun illumination), compared to those based on TiO2 ETLs. In addition, the Cl@SnO2-based devices showed improved open circuit voltage and photocurrent density, resulting in enhanced power conversion efficiency (PCE) up to 14.5% compared to that of TiO2-based control devices (PCE of 13.8%).
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Affiliation(s)
- S Lim
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - J Kim
- Department of Chemical Engineering, Hanyang University, Seoul 04763, Republic of Korea
- Division of Energy Technology, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, Republic of Korea
| | - J Y Park
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, Republic of Korea
| | - J Min
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - S Yun
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - T Park
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Y Kim
- Division of Energy Technology, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, Republic of Korea
| | - J Choi
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, Republic of Korea
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27
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Liu Y, Shi G, Liu Z, Ma W. Toward printable solar cells based on PbX colloidal quantum dot inks. NANOSCALE HORIZONS 2021; 6:8-23. [PMID: 33174558 DOI: 10.1039/d0nh00488j] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Lead chalcogenide (PbX, X = S, Se) colloidal quantum dots (CQDs) are promising solution-processed semiconductor materials for the construction of low-cost, large-area, and flexible solar cells. The properties of CQDs endow them with advantages in semi-conducting film deposition compared to other solution-processed photovoltaic materials, which is critical for the fabrication of efficient large-area solar cells towards industrialization. However, the development of large-area CQD solar cells is impeded by the conventional solid-state ligand exchange process, where the tedious processing with high expense is indispensable to facilitate charge transport of CQD films for photovoltaic applications. In the past several years, the rapid development of CQD inks has boosted the device performance and dramatically simplified the fabrication process. The CQD inks are compatible with most of the industrialized printing techniques, demonstrating potential in fabricating solar modules for commercialization. This article aims to review the recent advances in solar cells based on PbX CQD inks, including both lab-scale and large-area photovoltaic devices prepared from solution-phase ligand exchange (SPLE) as well as the recently invented "one-step" synthesis. We expect to draw attention to the enormous potential of CQD inks for developing high-efficiency and low-cost large-area photovoltaics.
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Affiliation(s)
- Yang Liu
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, 199 Ren-Ai Road, Suzhou Industrial Park, Suzhou, 215123 Jiangsu, P. R. China.
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28
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Mallakpour S, Sirous F, Hussain CM. A journey to the world of fascinating ZnO nanocomposites made of chitosan, starch, cellulose, and other biopolymers: Progress in recent achievements in eco-friendly food packaging, biomedical, and water remediation technologies. Int J Biol Macromol 2020; 170:701-716. [PMID: 33388319 DOI: 10.1016/j.ijbiomac.2020.12.163] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/17/2020] [Revised: 12/19/2020] [Accepted: 12/21/2020] [Indexed: 12/11/2022]
Abstract
Green chemistry or in other words "green world" is referred to a sustainable environment using biocompatible, biodegradable, renewable, economical, and simple materials, and methods. Without any exaggeration, the exceptional chemical and physical properties of ZnO bionanocomposites beside various utilizations, make it vital materials in research and green chemistry field. Biocompatible ZnO nanoparticles with fascinating antimicrobial, physicochemical, as well as photocatalytic performance could be applied as a prominent candidate to reinforce diverse biopolymer matrixes, for instance, chitosan, starch, cellulose, gelatin, alginate, poly(hydroxyalkanoates), carrageenan, and so on. With a combination of advantageous properties of these materials, they could be illustrated specific utilizations in different areas. In this regard, the following context focuses on highlighting the recent achievements of this category of material on three important and widely used scopes: eco-friendly food packaging, biomedical specially wound dressings, and water remediation technologies.
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Affiliation(s)
- Shadpour Mallakpour
- Organic Polymer Chemistry Research Laboratory, Department of Chemistry, Isfahan University of Technology, Isfahan 84156-83111, Islamic Republic of Iran.
| | - Fariba Sirous
- Organic Polymer Chemistry Research Laboratory, Department of Chemistry, Isfahan University of Technology, Isfahan 84156-83111, Islamic Republic of Iran
| | - Chaudhery Mustansar Hussain
- Department of Chemistry and Environmental Science, New Jersey Institute of Technology, Newark, NJ 07102, USA
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29
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Zhang X, Shen W, Bu F, Wang Y, Yu X, Zhang W, Wang J, Belfiore LA, Tang J. Strong enhanced efficiency of natural alginate for polymer solar cells through modification of the ZnO cathode buffer layer. APPLIED OPTICS 2020; 59:9042-9050. [PMID: 33104594 DOI: 10.1364/ao.398545] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/03/2020] [Accepted: 09/02/2020] [Indexed: 06/11/2023]
Abstract
Sodium alginate (SA), as a natural marine biopolymer, possesses many merits such as super-easy accessibility from the ocean, low cost, nontoxicity, and no synthesis for practical application. For the chemical structure, SA has enough lone electron pairs of oxygen atoms in the backbone and short branched chains, which is expected to passivate oxygen vacancy on the surface of the ZnO cathode buffer layer to improve the photovoltaic performance. Herein, it was applied to modify the surface trap of the ZnO layer in fullerene and non-fullerene polymer solar cells (PSCs). The defects were successfully reduced, and the trap-assisted recombination decreased. In a PTB7-Th:PC71BM system, power conversion efficiency (PCE) was improved from 8.06% to 9.36%. In the PM6:IT-4F system, PCE was enhanced from 12.13% to 13.08%. The addition of SA did not destroy the stability of the device. Overall, this work demonstrates the potential for preparing devices with long-time stability and industrial manufacture of PSCs by using biological materials in the future.
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30
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Yang J, Oh JT, Kim M, Song H, Boukhvalov DW, Lee SH, Choi H, Yi W. Hybrid Surface Passivation for Retrieving Charge Collection Efficiency of Colloidal Quantum Dot Photovoltaics. ACS APPLIED MATERIALS & INTERFACES 2020; 12:43576-43585. [PMID: 32876435 DOI: 10.1021/acsami.0c10077] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Efficient charge collection in photovoltaics is a key issue toward their high performance. Despite the promising performance of colloidal quantum dot (CQD)-based photovoltaics (CQDPVs), they suffer significant dissipation of photocurrent due to imperfect surface passivation of the CQD hole transport layer (HTL) by a single 1,2-ethaneditihol (EDT) ligand. To address the critical drawback of existing CQDPVs, we offer a hybrid passivation strategy, including both EDT and thiocyanate (SCN). The hybrid passivation leads to seamless surface passivation of CQDs, remarkably suppressing charge recombination. This strategy also augments the p-doping density of the CQD, resulting in a pronounced energy level bending at the active layer/HTL interface and facilitating efficient charge separation. Moreover, enhanced electronic coupling across the CQDs (originating from reduced inter-dot spacing) promotes rapid charge extraction. Consequently, the flawless charge collection by a hybrid-passivated HTL successfully retrieves the photocurrent, achieving an enhanced CQDPV power conversion efficiency of 12.70% compared with 11.49% for the control device.
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Affiliation(s)
- Jonghee Yang
- Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
- Research Institute for Natural Sciences, Hanyang University, Seoul 04763, Republic of Korea
| | - Jae Taek Oh
- Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
- Research Institute for Convergence of Basic Sciences, Hanyang University, Seoul 04763, Republic of Korea
| | - Minseon Kim
- Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
- Research Institute for Convergence of Basic Sciences, Hanyang University, Seoul 04763, Republic of Korea
| | - Hochan Song
- Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
- Research Institute for Convergence of Basic Sciences, Hanyang University, Seoul 04763, Republic of Korea
| | - Danil W Boukhvalov
- College of Science, Institute of Material Physics and Chemistry, Nanjing Forestry University, Nanjing 210037, China
- Institute of Physics and Technology, Ural Federal University, Mira str. 19, Yekaterinburg 620002, Russia
| | - Seung Hyun Lee
- Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
- Research Institute for Natural Sciences, Hanyang University, Seoul 04763, Republic of Korea
| | - Hyosung Choi
- Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
- Research Institute for Convergence of Basic Sciences, Hanyang University, Seoul 04763, Republic of Korea
| | - Whikun Yi
- Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
- Research Institute for Natural Sciences, Hanyang University, Seoul 04763, Republic of Korea
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31
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Tan CS, Hou Y, Saidaminov MI, Proppe A, Huang YS, Zhao Y, Wei M, Walters G, Wang Z, Zhao Y, Todorovic P, Kelley SO, Chen LJ, Sargent EH. Heterogeneous Supersaturation in Mixed Perovskites. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:1903166. [PMID: 32274311 PMCID: PMC7140989 DOI: 10.1002/advs.201903166] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/06/2019] [Revised: 12/20/2019] [Indexed: 05/29/2023]
Abstract
Thin-film solar cells based on hybrid lead halide perovskites have achieved certified power conversion efficiencies exceeding 24%, approaching those of crystalline silicon. This motivates deeper studies of the mechanisms that determine their performance. Twin defect sites have been proposed as a source of traps in perovskites, yet their origin and influence on photovoltaic performance remain unclear. It is found that twin defects-observed herein via both transmission electron microscopy and X-ray diffraction-are correlated with the amount of antisolvent added to the perovskite and that twin defects in the highest-performing perovskite photovoltaics are suppressed. Heterogeneous supersaturation nucleation is discussed as a contributor to efficient perovskite-based optoelectronic devices.
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Affiliation(s)
- Chih Shan Tan
- Department of Electrical and Computer EngineeringUniversity of Toronto10 King's College RoadTorontoOntarioM5S 3G4Canada
- Frontier Research Center on Fundamental and Applied Sciences of MattersDepartment of Materials Science and EngineeringNational Tsing Hua UniversityHsinchuTaiwan30043Republic of China
| | - Yi Hou
- Department of Electrical and Computer EngineeringUniversity of Toronto10 King's College RoadTorontoOntarioM5S 3G4Canada
| | - Makhsud I. Saidaminov
- Department of Electrical and Computer EngineeringUniversity of Toronto10 King's College RoadTorontoOntarioM5S 3G4Canada
- Department of Chemistry and Electrical and Computer EngineeringCentre for Advanced Materials and Related Technologies (CAMTEC)University of Victoria3800 Finnerty RdVictoriaBC V8P 5C2Canada
| | - Andrew Proppe
- Department of Electrical and Computer EngineeringUniversity of Toronto10 King's College RoadTorontoOntarioM5S 3G4Canada
- Department of ChemistryUniversity of Toronto80 St. George StreetTorontoOntarioM5S 3G4Canada
| | - Yu Sheng Huang
- Frontier Research Center on Fundamental and Applied Sciences of MattersDepartment of Materials Science and EngineeringNational Tsing Hua UniversityHsinchuTaiwan30043Republic of China
| | - Yicheng Zhao
- Department of Electrical and Computer EngineeringUniversity of Toronto10 King's College RoadTorontoOntarioM5S 3G4Canada
| | - Mingyang Wei
- Department of Electrical and Computer EngineeringUniversity of Toronto10 King's College RoadTorontoOntarioM5S 3G4Canada
| | - Grant Walters
- Department of Electrical and Computer EngineeringUniversity of Toronto10 King's College RoadTorontoOntarioM5S 3G4Canada
| | - Ziyun Wang
- Department of Electrical and Computer EngineeringUniversity of Toronto10 King's College RoadTorontoOntarioM5S 3G4Canada
| | - Yongbiao Zhao
- Department of Electrical and Computer EngineeringUniversity of Toronto10 King's College RoadTorontoOntarioM5S 3G4Canada
| | - Petar Todorovic
- Department of Electrical and Computer EngineeringUniversity of Toronto10 King's College RoadTorontoOntarioM5S 3G4Canada
| | - Shana O. Kelley
- Department of ChemistryUniversity of Toronto80 St. George StreetTorontoOntarioM5S 3G4Canada
- Department of Pharmaceutical SciencesLeslie Dan Faculty of PharmacyUniversity of TorontoTorontoOntarioM5S 3M2Canada
| | - Lih Juann Chen
- Frontier Research Center on Fundamental and Applied Sciences of MattersDepartment of Materials Science and EngineeringNational Tsing Hua UniversityHsinchuTaiwan30043Republic of China
| | - Edward H. Sargent
- Department of Electrical and Computer EngineeringUniversity of Toronto10 King's College RoadTorontoOntarioM5S 3G4Canada
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32
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Zhang X, Wo X, Han T, Ren S, Deng Y, He S, Wang H. Synthesis and Application of New Polyphosphazene Microsphere Photocatalysts. J Inorg Organomet Polym Mater 2020. [DOI: 10.1007/s10904-019-01234-9] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/02/2023]
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33
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Choi J, Choi MJ, Kim J, Dinic F, Todorovic P, Sun B, Wei M, Baek SW, Hoogland S, García de Arquer FP, Voznyy O, Sargent EH. Stabilizing Surface Passivation Enables Stable Operation of Colloidal Quantum Dot Photovoltaic Devices at Maximum Power Point in an Air Ambient. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1906497. [PMID: 31930771 DOI: 10.1002/adma.201906497] [Citation(s) in RCA: 24] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/03/2019] [Revised: 11/22/2019] [Indexed: 06/10/2023]
Abstract
Colloidal quantum dots (CQDs) are promising materials for photovoltaic (PV) applications owing to their size-tunable bandgap and solution processing. However, reports on CQD PV stability have been limited so far to storage in the dark; or operation illuminated, but under an inert atmosphere. CQD PV devices that are stable under continuous operation in air have yet to be demonstrated-a limitation that is shown here to arise due to rapid oxidation of both CQDs and surface passivation. Here, a stable CQD PV device under continuous operation in air is demonstrated by introducing additional potassium iodide (KI) on the CQD surface that acts as a shielding layer and thus stands in the way of oxidation of the CQD surface. The devices (unencapsulated) retain >80% of their initial efficiency following 300 h of continuous operation in air, whereas CQD PV devices without KI lose the amount of performance within just 21 h. KI shielding also provides improved surface passivation and, as a result, a higher power conversion efficiency (PCE) of 12.6% compared with 11.4% for control devices.
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Affiliation(s)
- Jongmin Choi
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Min-Jae Choi
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Junghwan Kim
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Filip Dinic
- Department of Physical and Environmental Sciences, University of Toronto, 1065, Military Trail, Toronto, Ontario, M1C 1A4, Canada
| | - Petar Todorovic
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Bin Sun
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Mingyang Wei
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Se-Woong Baek
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Sjoerd Hoogland
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - F Pelayo García de Arquer
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Oleksandr Voznyy
- Department of Physical and Environmental Sciences, University of Toronto, 1065, Military Trail, Toronto, Ontario, M1C 1A4, Canada
| | - Edward H Sargent
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
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34
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Zhang Y, Wu G, Liu F, Ding C, Zou Z, Shen Q. Photoexcited carrier dynamics in colloidal quantum dot solar cells: insights into individual quantum dots, quantum dot solid films and devices. Chem Soc Rev 2020; 49:49-84. [PMID: 31825404 DOI: 10.1039/c9cs00560a] [Citation(s) in RCA: 27] [Impact Index Per Article: 6.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/05/2023]
Abstract
The certified power conversion efficiency (PCE) record of colloidal quantum dot solar cells (QDSCs) has considerably improved from below 4% to 16.6% in the last few years. However, the record PCE value of QDSCs is still substantially lower than the theoretical efficiency. So far, there have been several reviews on recent and significant achievements in QDSCs, but reviews on photoexcited carrier dynamics in QDSCs are scarce. The photovoltaic performances of QDSCs are still limited by the photovoltage, photocurrent and fill factor that are mainly determined by the photoexcited carrier dynamics, including carrier (or exciton) generation, carrier extraction or transfer, and the carrier recombination process, in the devices. In this review, the photoexcited carrier dynamics in the whole QDSCs, originating from individual quantum dots (QDs) to the entire device as well as the characterization methods used for analyzing the photoexcited carrier dynamics are summarized and discussed. The recent research including photoexcited multiple exciton generation (MEG), hot electron extraction, and carrier transfer between adjacent QDs, as well as carrier injection and recombination at each interface of QDSCs are discussed in detail herein. The influence of photoexcited carrier dynamics on the physiochemical properties of QDs and photovoltaic performances of QDSC devices is also discussed.
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Affiliation(s)
- Yaohong Zhang
- Faculty of Informatics and Engineering, The University of Electro-Communications, Tokyo 182-8585, Japan.
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35
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Woo HK, Kang MS, Park T, Bang J, Jeon S, Lee WS, Ahn J, Cho G, Ko DK, Kim Y, Ha DH, Oh SJ. Colloidal-annealing of ZnO nanoparticles to passivate traps and improve charge extraction in colloidal quantum dot solar cells. NANOSCALE 2019; 11:17498-17505. [PMID: 31532437 DOI: 10.1039/c9nr06346c] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The popularity of colloidal quantum dot (CQD) solar cells has increased owing to their tunable bandgap, multiple exciton generation, and low-cost solution processes. ZnO nanoparticle (NP) layers are generally employed as electron transport layers in CQD solar cells to efficiently extract the electrons. However, trap sites and the unfavorable band structure of the as-synthesized ZnO NPs have hindered their potential performance. Herein, we introduce a facile method of ZnO NP annealing in the colloidal state. Electrical, structural, and optical analyses demonstrated that the colloidal-annealing of ZnO NPs effectively passivated the defects and simultaneously shifted their band diagram; therefore, colloidal-annealing is a more favorable method as compared to conventional film-annealing. These CQD solar cells based on colloidal-annealed ZnO NPs exhibited efficient charge extraction, reduced recombination and achieved an enhanced power conversion efficiency (PCE) of 9.29%, whereas the CQD solar cells based on ZnO NPs without annealing had a PCE of 8.05%. Moreover, the CQD solar cells using colloidal-annealed ZnO NPs exhibited an improved air stability with 98% retention after 120 days, as compared to that of CQD solar cells using non-annealed ZnO NPs with 84% retention.
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Affiliation(s)
- Ho Kun Woo
- Department of Materials Science and Engineering, Korea University, 02841, Republic of Korea.
| | - Min Su Kang
- Department of Materials Science and Engineering, Korea University, 02841, Republic of Korea.
| | - Taesung Park
- Department of Materials Science and Engineering, Korea University, 02841, Republic of Korea.
| | - Junsung Bang
- Department of Materials Science and Engineering, Korea University, 02841, Republic of Korea.
| | - Sanghyun Jeon
- Department of Materials Science and Engineering, Korea University, 02841, Republic of Korea.
| | - Woo Seok Lee
- Department of Materials Science and Engineering, Korea University, 02841, Republic of Korea.
| | - Junhyuk Ahn
- Department of Materials Science and Engineering, Korea University, 02841, Republic of Korea.
| | - Geonhee Cho
- School of Integrative Engineering, Chung-Ang University, Seoul, 06974, Republic of Korea
| | - Dong-Kyun Ko
- Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102, USA
| | - Younghoon Kim
- Convergence Research Center for Solar Energy, Daegu Gyeongbuk Institute of Science and Technology (DGIST), 333 Techno Jungang-Daero, Hyeonpung, Daegu 42988, Korea
| | - Don-Hyung Ha
- School of Integrative Engineering, Chung-Ang University, Seoul, 06974, Republic of Korea
| | - Soong Ju Oh
- Department of Materials Science and Engineering, Korea University, 02841, Republic of Korea.
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36
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Yang J, Lee J, Lee J, Yi W. Improving Charge Collection from Colloidal Quantum Dot Photovoltaics by Single-Walled Carbon Nanotube Incorporation. ACS APPLIED MATERIALS & INTERFACES 2019; 11:33759-33769. [PMID: 31430430 DOI: 10.1021/acsami.9b07089] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Improving charge collection is one of the key issues for high-performance PbS colloidal quantum dot photovoltaics (CQDPVs) due to the considerable charge loss resulting from the low mobility and large defect densities of the 1,2-ethanedithiol-treated PbS quantum dot hole-transporting layer (HTL). To overcome these limitations, single-walled carbon nanotubes (SWNTs) and C60-encapsulated SWNTs (C60@SWNTs) are incorporated into the HTL in CQDPVs. SWNT-incorporated CQDPV demonstrates a significantly improved short-circuit current density (JSC), and C60@SWNT-incorporated CQDPV exhibits an even higher JSC than that of pristine SWNT. Both result in improved power-conversion efficiencies. Hole-selective, photoinduced charge extraction with linearly increasing voltage measurements demonstrates that SWNT or C60@SWNT incorporation improves hole-transporting behavior, rendering suppressed charge recombination and enhanced mobility of the HTL. The enhanced p-type characteristics and the improved hole diffusion lengths of SWNT- or C60@SWNT-incorporated HTL bring improvement of the entire hole-transporting length and enable lossless hole collection, which results in the JSC enhancement of the CQDPVs.
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Affiliation(s)
- Jonghee Yang
- Research Institute for Natural Sciences and Department of Chemistry , Hanyang University , Seoul 04763 , Republic of Korea
| | - Jongtaek Lee
- Research Institute for Natural Sciences and Department of Chemistry , Hanyang University , Seoul 04763 , Republic of Korea
| | - Junyoung Lee
- Research Institute for Natural Sciences and Department of Chemistry , Hanyang University , Seoul 04763 , Republic of Korea
| | - Whikun Yi
- Research Institute for Natural Sciences and Department of Chemistry , Hanyang University , Seoul 04763 , Republic of Korea
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37
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Choi MJ, Kim Y, Lim H, Alarousu E, Adhikari A, Shaheen BS, Kim YH, Mohammed OF, Sargent EH, Kim JY, Jung YS. Tuning Solute-Redistribution Dynamics for Scalable Fabrication of Colloidal Quantum-Dot Optoelectronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1805886. [PMID: 31148263 DOI: 10.1002/adma.201805886] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/10/2018] [Revised: 04/25/2019] [Indexed: 06/09/2023]
Abstract
Solution-processed colloidal quantum dots (CQDs) are attractive materials for the realization of low-cost and efficient optoelectronic devices. Although impressive CQD-solar-cell performance has been achieved, the fabrication of CQD films is still limited to laboratory-scale small areas because of the complicated deposition of CQD inks. Large-area, uniform deposition of lead sulfide (PbS) CQD inks is successfully realized for photovoltaic device applications by engineering the solute redistribution of CQD droplets. It is shown experimentally and theoretically that the solute-redistribution dynamics of CQD droplets are highly dependent on the movement of the contact line and on the evaporation kinetics of the solvent. By lowering the friction constant of the contact line and increasing the evaporation rate of the droplets, a uniform deposition of CQD ink in length and width over large areas is realized. By utilizing a spray-coating process, large-area (up to 100 cm2 ) CQD films are fabricated with 3-7% thickness variation on various substrates including glass, indium tin oxide glass, and polyethylene terephthalate. Furthermore, scalable fabrication of CQD solar cells is demonstrated with 100 cm2 CQD films which exhibits a notably high efficiency of 8.10%.
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Affiliation(s)
- Min-Jae Choi
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, South Korea
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - YongJoo Kim
- Institute for NanoCentury, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, South Korea
| | - Hunhee Lim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, South Korea
| | - Erkki Alarousu
- King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia
| | - Aniruddha Adhikari
- King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia
| | - Basamat S Shaheen
- King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia
| | - Yong Ho Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, South Korea
| | - Omar F Mohammed
- King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia
| | - Edward H Sargent
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Jin Young Kim
- Fuel Cell Research Center, Korea Institute of Science and Technology, Seoul, 02792, South Korea
| | - Yeon Sik Jung
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, South Korea
- Institute for NanoCentury, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, South Korea
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38
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Shrestha A, Batmunkh M, Tricoli A, Qiao SZ, Dai S. Nahinfrarotaktive Bleichalkogenid‐Quantenpunkte: Herstellung, postsynthetischer Ligandenaustausch und Anwendungen in Solarzellen. Angew Chem Int Ed Engl 2019. [DOI: 10.1002/ange.201804053] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
Affiliation(s)
- Aabhash Shrestha
- School of Chemical Engineering The University of Adelaide Adelaide SA 5005 Australien
- Nanotechnology Research Laboratory, Research School of Engineering The Australian National University Canberra ACT 2601 Australien
| | - Munkhbayar Batmunkh
- School of Chemical Engineering The University of Adelaide Adelaide SA 5005 Australien
- College of Science and Engineering Flinders University Bedford Park Adelaide SA 5042 Australien
- Australian Institute for Bioengineering and Nanotechnology The University of Queensland Brisbane Queensland 4072 Australien
| | - Antonio Tricoli
- Nanotechnology Research Laboratory, Research School of Engineering The Australian National University Canberra ACT 2601 Australien
| | - Shi Zhang Qiao
- School of Chemical Engineering The University of Adelaide Adelaide SA 5005 Australien
| | - Sheng Dai
- School of Chemical Engineering The University of Adelaide Adelaide SA 5005 Australien
- Department of Chemical Engineering Brunel University London Uxbridge UB8 3 Großbritannien
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39
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Meng L, Zeng T, Jin Y, Xu Q, Wang X. Surface-Modified Substrates for Quantum Dot Inks in Printed Electronics. ACS OMEGA 2019; 4:4161-4168. [PMID: 31459625 PMCID: PMC6648829 DOI: 10.1021/acsomega.9b00195] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/22/2019] [Accepted: 02/13/2019] [Indexed: 05/29/2023]
Abstract
Printed electronics fill the niches for low-cost, flexible devices in electronics. Developing substrates suitable for various printable electronic inks becomes an important topic in both academia and industry. Because of their extraordinary properties like solution processability, colloidal quantum dots (QDs) are gradually emerging in this field as promising candidates for electronic inks. In recent years, researchers have successfully produced high quality PbS QD inks in polar solvents. However, the incorporation of electronic inks onto a well-passivated substrate remains challenging due to the processing incompatibility between polar solvents and hydrophobic substrates. Here, we propose a surface modification strategy by using chlorine to achieve both trap-site suppression and a hydrophilic surface. The chlorine can effectively passivate the surface dangling bonds and charged hydroxyls while creating a hydrophilic surface. On this modified substrate, the contact angle between the water droplet and the SiO2 substrate can be as small as 20° and this strategy is also feasible for other polymer and inorganic substrates. For a proof-of-concept demonstration, we fabricated a PbS QD ink-based field-effect transistor on a Cl-passivated substrate, and the device showed a mobility as high as 4.36 × 10-3 cm2/V s, which indicates effective trap-site suppression. This device also enables the potential of the Cl-passivated substrates for QD inks with water or other polar solvents.
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Affiliation(s)
- Lingju Meng
- Department
of Electrical and Computer Engineering, University of Alberta, 9107-116 Street, Edmonton, Canada T6G 2V4
| | - Tao Zeng
- Department
of Electrical and Computer Engineering, University of Alberta, 9107-116 Street, Edmonton, Canada T6G 2V4
- School
of Material Science and Engineering, Jingdezhen
Ceramic Institute (Xianghu Campus), Xianghu Road, Jingdezhen 333000, Jiangxi, P.
R. China
| | - Yihan Jin
- Department
of Electrical and Computer Engineering, University of Alberta, 9107-116 Street, Edmonton, Canada T6G 2V4
- School
of Optoelectronics, Beijing Institute of
Technology, No. 5 South Zhong Guan Cun Street, Beijing 100081, P. R. China
| | - Qiwei Xu
- Department
of Electrical and Computer Engineering, University of Alberta, 9107-116 Street, Edmonton, Canada T6G 2V4
| | - Xihua Wang
- Department
of Electrical and Computer Engineering, University of Alberta, 9107-116 Street, Edmonton, Canada T6G 2V4
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40
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Gao Y, Patterson R, Hu L, Yuan L, Zhang Z, Hu Y, Chen Z, Teh ZL, Conibeer G, Huang S. MgCl 2 passivated ZnO electron transporting layer to improve PbS quantum dot solar cells. NANOTECHNOLOGY 2019; 30:085403. [PMID: 30248023 DOI: 10.1088/1361-6528/aae3de] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The unique tunable bandgaps and straightforward synthesis of colloidal quantum dots make them promising low-cost materials for photovoltaics. High-performance colloidal quantum dot solar cells rely on good-quality electron transporting layers (ETLs) to make carrier selective contacts. Despite extensive use of n-type oxides as ETLs, a detailed understanding of their surface and interface states as well as mechanisms to improve their optical properties are still under development. Here, we report a simple procedure to produce MgCl2 passivated ZnO nanoparticles ETLs that show improved device performance. The MgCl2 treated ZnO electron transporting layers boost the PbS colloidal quantum dot cell efficiency from 6.3% to 8.2%. The cell exhibits reduced defects leading to significant improvements of both FF and J sc. This low-temperature MgCl2 treated ZnO electron transporting layer may be applied in solution processed tandem cells as a promising strategy to further increase cell efficiencies.
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Affiliation(s)
- Yijun Gao
- Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney 2052, Australia
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41
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Shrestha A, Batmunkh M, Tricoli A, Qiao SZ, Dai S. Near-Infrared Active Lead Chalcogenide Quantum Dots: Preparation, Post-Synthesis Ligand Exchange, and Applications in Solar Cells. Angew Chem Int Ed Engl 2019; 58:5202-5224. [PMID: 29878530 DOI: 10.1002/anie.201804053] [Citation(s) in RCA: 52] [Impact Index Per Article: 10.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/05/2018] [Indexed: 12/12/2022]
Abstract
Quantum dots (QDs) of lead chalcogenides (e.g. PbS, PbSe, and PbTe) are attractive near-infrared (NIR) active materials that show great potential in a wide range of applications, such as, photovoltaics (PV), optoelectronics, sensors, and bio-electronics. The surface ligand plays an essential role in the production of QDs, post-synthesis modification, and their integration to practical applications. Therefore, it is critically important that the influence of surface ligands on the synthesis and properties of QDs is well understood for their applications in various devices. In this Review we elaborate the application of colloidal synthesis techniques for the preparation of lead chalcogenide based QDs. We specifically focus on the influence of surface ligands on the synthesis of QDs and their solution-phase ligand exchange. Given the importance of lead chalcogenide QDs as potential light harvesters, we also pay particular attention to the current progress of these QDs in photovoltaic applications.
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Affiliation(s)
- Aabhash Shrestha
- School of Chemical Engineering, The University of Adelaide, Adelaide, SA, 5005, Australia.,Nanotechnology Research Laboratory, Research School of Engineering, The Australian National University, Canberra, ACT, 2601, Australia
| | - Munkhbayar Batmunkh
- School of Chemical Engineering, The University of Adelaide, Adelaide, SA, 5005, Australia.,College of Science and Engineering, Flinders University, Bedford Park, Adelaide, SA, 5042, Australia.,Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, Brisbane, Queensland, 4072, Australia
| | - Antonio Tricoli
- Nanotechnology Research Laboratory, Research School of Engineering, The Australian National University, Canberra, ACT, 2601, Australia
| | - Shi Zhang Qiao
- School of Chemical Engineering, The University of Adelaide, Adelaide, SA, 5005, Australia
| | - Sheng Dai
- School of Chemical Engineering, The University of Adelaide, Adelaide, SA, 5005, Australia.,Department of Chemical Engineering, Brunel University London, Uxbridge, UB8 3PH, UK
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42
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Bi Y, Bertran A, Gupta S, Ramiro I, Pradhan S, Christodoulou S, Majji SN, Akgul MZ, Konstantatos G. Solution processed infrared- and thermo-photovoltaics based on 0.7 eV bandgap PbS colloidal quantum dots. NANOSCALE 2019; 11:838-843. [PMID: 30574637 DOI: 10.1039/c8nr08755e] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Harnessing low energy photons is of paramount importance for multi-junction high efficiency solar cells as well as for thermo-photovoltaic applications. However, semiconductor absorbers with the bandgap lower than 0.8 eV have been limited to III-V (InGaAs) or IV (Ge) semiconductors that are characterized by high manufacturing costs and complicated lattice matching requirements in their growth and integration with higher bandgap cells. Here, we have developed solution processed low bandgap photovoltaic devices based on PbS colloidal quantum dots (CQDs) with a bandgap of 0.7 eV suited for both thermo-photovoltaics and low energy solar photon harvesting. By matching the spectral response of those cells to that of the infrared solar spectrum, we report a record high short circuit current (JSC) of 37 mA cm-2 under the full solar spectrum and 5.5 mA cm-2 when placed at the back of a silicon wafer resulting in power conversion efficiencies (PCEs) of 6.4% and 0.7%, respectively. Moreover, the device reached an above bandgap PCE of ∼6% as a thermo-photovoltaic cell recorded under a 1000 °C blackbody radiator.
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Affiliation(s)
- Yu Bi
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, Av. Carl Friedrich Gauss, 3, 08860 Castelldefels, Barcelona, Spain.
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43
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Hosokawa H, Tamaki R, Sawada T, Okonogi A, Sato H, Ogomi Y, Hayase S, Okada Y, Yano T. Solution-processed intermediate-band solar cells with lead sulfide quantum dots and lead halide perovskites. Nat Commun 2019; 10:43. [PMID: 30626874 PMCID: PMC6327045 DOI: 10.1038/s41467-018-07655-3] [Citation(s) in RCA: 50] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/15/2018] [Accepted: 11/16/2018] [Indexed: 11/09/2022] Open
Abstract
The intermediate-band solar cell (IBSC) with quantum dots and a bulk semiconductor matrix has potential for high power conversion efficiency, exceeding the Shockley-Queisser limit. However, the IBSCs reported to date have been fabricated only by dry process and their efficiencies are limited, because their photo-absorption layers have low particle density of quantum dots, defects due to lattice strain, and low bandgap energy of bulk semiconductors. Here we present solution-processed IBSCs containing photo-absorption layers where lead sulfide quantum dots are densely dispersed in methylammonium lead bromide perovskite matrices with a high bandgap energy of 2.3 eV under undistorted conditions. We confirm that the present IBSCs exhibit two-step photon absorption via intermediate-band at room temperature by inter-subband photocurrent spectroscopy.
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Affiliation(s)
- Hiroji Hosokawa
- Material Science Research, R&D, Kao Corporation, 1334 Minato, Wakayama, 640-8580, Japan.
| | - Ryo Tamaki
- Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, 153-8904, Japan
| | - Takuya Sawada
- Material Science Research, R&D, Kao Corporation, 1334 Minato, Wakayama, 640-8580, Japan
| | - Akinori Okonogi
- Material Science Research, R&D, Kao Corporation, 1334 Minato, Wakayama, 640-8580, Japan
| | - Haruyuki Sato
- Material Science Research, R&D, Kao Corporation, 1334 Minato, Wakayama, 640-8580, Japan
| | - Yuhei Ogomi
- Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu-ku, Kitakyushu, Fukuoka, 808-0196, Japan
| | - Shuzi Hayase
- Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu-ku, Kitakyushu, Fukuoka, 808-0196, Japan
| | - Yoshitaka Okada
- Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, 153-8904, Japan
| | - Toshihiro Yano
- Material Science Research, R&D, Kao Corporation, 1334 Minato, Wakayama, 640-8580, Japan
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44
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Maiti S, Dana J, Ghosh HN. Correlating Charge‐Carrier Dynamics with Efficiency in Quantum‐Dot Solar Cells: Can Excitonics Lead to Highly Efficient Devices? Chemistry 2018; 25:692-702. [DOI: 10.1002/chem.201801853] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/15/2018] [Revised: 07/06/2018] [Indexed: 11/06/2022]
Affiliation(s)
- Sourav Maiti
- Radiation & Photochemistry DivisionBhabha Atomic Research Centre Mumbai 400085 India
- Department of ChemistrySavitribai Phule Pune University Ganeshkhind Pune 411007 India
| | - Jayanta Dana
- Radiation & Photochemistry DivisionBhabha Atomic Research Centre Mumbai 400085 India
| | - Hirendra N. Ghosh
- Radiation & Photochemistry DivisionBhabha Atomic Research Centre Mumbai 400085 India
- Institute of Nano Science and Technology Mohali Punjab 160062 India
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Zhou R, Yang Z, Xu J, Cao G. Synergistic combination of semiconductor quantum dots and organic-inorganic halide perovskites for hybrid solar cells. Coord Chem Rev 2018. [DOI: 10.1016/j.ccr.2018.07.009] [Citation(s) in RCA: 40] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/07/2023]
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Azmi R, Seo G, Ahn TK, Jang SY. High-Efficiency Air-Stable Colloidal Quantum Dot Solar Cells Based on a Potassium-Doped ZnO Electron-Accepting Layer. ACS APPLIED MATERIALS & INTERFACES 2018; 10:35244-35249. [PMID: 30246532 DOI: 10.1021/acsami.8b12577] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
High-efficiency colloidal quantum dot (CQD) solar cells (CQDSCs) with improved air stability were developed by employing potassium-modified ZnO as an electron-accepting layer (EAL). The effective potassium modification was achievable by a simple treatment with a KOH solution of pristine ZnO films prepared by a low-temperature solution process. The resulting K-doped ZnO (ZnO-K) exhibited EAL properties superior to those of a pristine ZnO-EAL. The Fermi energy level of ZnO was upshifted, which increased the internal electric field and amplified the depletion region (i.e., charge drift) of the devices. The surface defects of ZnO were effectively passivated by K modification, which considerably suppressed interfacial charge recombination. The CQDSC based on ZnO-K achieved improved power conversion efficiency (PCE) of ≈10.75% ( VOC of 0.67 V, JSC of 23.89 mA cm-2, and fill factor of 0.68), whereas the CQDSC based on pristine ZnO showed PCE of 9.97%. Moreover, the suppressed surface defects of ZnO-K substantially improved long-term stability under air. The device using ZnO-K exhibited superior long-term air storage stability (96% retention after 90 days) compared to that using pristine ZnO (88% retention after 90 days). The ZnO-K-based device also exhibited improved photostability under air. Under continuous light illumination for 600 min, the ZnO-K-based device retained 96% of its initial PCE, whereas the pristine ZnO-based device retained only 67%.
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Affiliation(s)
- Randi Azmi
- Department of Chemistry , Kookmin University , 77 Jeongneung-ro , Seongbuk-gu, Seoul 136-702 , Republic of Korea
| | - Gabseok Seo
- Department of Energy Science , Sungkyunkwan University , 2066 Seobu-ro , Jangan-gu, Suwon , Gyeonggi-do 16419 , Republic of Korea
| | - Tae Kyu Ahn
- Department of Energy Science , Sungkyunkwan University , 2066 Seobu-ro , Jangan-gu, Suwon , Gyeonggi-do 16419 , Republic of Korea
| | - Sung-Yeon Jang
- Department of Chemistry , Kookmin University , 77 Jeongneung-ro , Seongbuk-gu, Seoul 136-702 , Republic of Korea
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Energy level tuned indium arsenide colloidal quantum dot films for efficient photovoltaics. Nat Commun 2018; 9:4267. [PMID: 30323251 PMCID: PMC6189201 DOI: 10.1038/s41467-018-06399-4] [Citation(s) in RCA: 34] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/05/2018] [Accepted: 08/29/2018] [Indexed: 11/08/2022] Open
Abstract
We introduce indium arsenide colloidal quantum dot films for photovoltaic devices, fabricated by two-step surface modification. Native ligands and unwanted oxides on the surface are peeled off followed by passivating with incoming atomic or short ligands. The near-infrared-absorbing n-type indium arsenide colloidal quantum dot films can be tuned in energy-level positions up to 0.4 eV depending on the surface chemistry, and consequently, they boost collection efficiency when used in various emerging solar cells. As an example, we demonstrate p-n junction between n-type indium arsenide and p-type lead sulfide colloidal quantum dot layers, which leads to a favorable electronic band alignment and charge extraction from both colloidal quantum dot layers. A certified power conversion efficiency of 7.92% is achieved without additionally supporting carrier transport layers. This study provides richer materials to explore for high-efficiency emerging photovoltaics and will broaden research interest for various optoelectronic applications using the n-type covalent nanocrystal arrays.
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Abstract
From a niche field over 30 years ago, quantum dots (QDs) have developed into viable materials for many commercial optoelectronic devices. We discuss the advancements in Pb-based QD solar cells (QDSCs) from a viewpoint of the pathways an excited state can take when relaxing back to the ground state. Systematically understanding the fundamental processes occurring in QDs has led to improvements in solar cell efficiency from ~3% to over 13% in 8 years. We compile data from ~200 articles reporting functioning QDSCs to give an overview of the current limitations in the technology. We find that the open circuit voltage limits the device efficiency and propose some strategies for overcoming this limitation.
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Tulsani SR, Rath AK. Photo-induced surface modification to improve the performance of lead sulfide quantum dot solar cell. J Colloid Interface Sci 2018; 522:120-125. [PMID: 29579563 DOI: 10.1016/j.jcis.2018.03.047] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/27/2017] [Revised: 03/09/2018] [Accepted: 03/14/2018] [Indexed: 10/17/2022]
Abstract
The solution-processed quantum dot (QD) solar cell technology has seen significant advancements in recent past to emerge as a potential contender for the next generation photovoltaic technology. In the development of high performance QD solar cell, the surface ligand chemistry has played the important role in controlling the doping type and doping density of QD solids. For instance, lead sulfide (PbS) QDs which is at the forefront of QD solar cell technology, can be made n-type or p-type respectively by using iodine or thiol as the surfactant. The advancements in surface ligand chemistry enable the formation of p-n homojunction of PbS QDs layers to attain high solar cell performances. It is shown here, however, that poor Fermi level alignment of thiol passivated p-type PbS QD hole transport layer with the n-type PbS QD light absorbing layer has rendered the photovoltaic devices from realizing their full potential. Here we develop a control surface oxidation technique using facile ultraviolet ozone treatment to increase the p-doping density in a controlled fashion for the thiol passivated PbS QD layer. This subtle surface modification tunes the Fermi energy level of the hole transport layer to deeper values to facilitate the carrier extraction and voltage generation in photovoltaic devices. In photovoltaic devices, the ultraviolet ozone treatment resulted in the average gain of 18% in the power conversion efficiency with the highest recorded efficiency of 8.98%.
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Affiliation(s)
| | - Arup Kumar Rath
- CSIR-National Chemical Laboratory, Dr. Homi Bhabha Road, Pune 411008, India.
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Huang YJ, Chen HC, Lin HK, Wei KH. Doping ZnO Electron Transport Layers with MoS 2 Nanosheets Enhances the Efficiency of Polymer Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2018; 10:20196-20204. [PMID: 29783839 DOI: 10.1021/acsami.8b06413] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
In this study, we incorporated molybdenum disulfide (MoS2) nanosheets into sol-gel processing of zinc oxide (ZnO) to form ZnO:MoS2 composites for use as electron transport layers (ETLs) in inverted polymer solar cells featuring a binary bulk heterojunction active layer. We could effectively tune the energy band of the ZnO:MoS2 composite film from 4.45 to 4.22 eV by varying the content of MoS2 up to 0.5 wt %, such that the composite was suitable for use in bulk heterojunction photovoltaic devices based on poly[bis(5-(2-ethylhexyl)thien-2-yl)benzodithiophene- alt-(4-(2-ethylhexyl)-3-fluorothienothiophene)-2-carboxylate-2,6-diyl] (PTB7-TH)/phenyl-C71-butryric acid methyl ester (PC71BM). In particular, the power conversion efficiency (PCE) of the PTB7-TH/PC71BM (1:1.5, w/w) device incorporating the ZnO:MoS2 (0.5 wt %) composite layer as the ETL was 10.1%, up from 8.8% for the corresponding device featuring ZnO alone as the ETL, a relative increase of 15%. Incorporating a small amount of MoS2 nanosheets into the ETL altered the morphology of the ETL and resulted in enhanced current densities, fill factors, and PCEs for the devices. We used ultraviolet photoelectron spectroscopy, synchrotron grazing incidence wide-/small-angle X-ray scattering, atomic force microscopy, and transmission electron microscopy to characterize the energy band structures, internal structures, surface roughness, and morphologies, respectively, of the ZnO:MoS2 composite films.
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