Monolayer Transition Metal Dichalcogenides as Light Sources

Sub-Diffraction Correlation of Quantum Emitters and Local Strain Fields in Strain-Engineered WSe2 Monolayers

Strain-engineering in atomically thin metal dichalcogenides is a useful method for realizing single-photon emitters (SPEs) for quantum technologies. Correlating SPE position with local strain topography is challenging due to localization inaccuracies from the diffraction limit. Currently, SPEs are assumed to be positioned at the highest strained location and are typically identified by randomly screening narrow-linewidth emitters, of which only a few are spectrally pure. In this work, hyperspectral quantum emitter localization microscopy is used to locate 33 SPEs in nanoparticle-strained WSe2 monolayers with sub-diffraction-limit resolution (≈30 nm) and correlate their positions with the underlying strain field via image registration. In this system, spectrally pure emitters are not concentrated at the highest strain location due to spectral contamination; instead, isolable SPEs are distributed away from points of peak strain with an average displacement of 240 nm. These observations point toward a need for a change in the design rules for strain-engineered SPEs and constitute a key step toward realizing next-generation quantum optical architectures.

Synergetic Enhancement of Quantum Yield and Exciton Lifetime of Monolayer WS2 by Proximal Metal Plate and Negative Electric Bias

The efficiency of light emission is a critical performance factor for monolayer transition metal dichalcogenides (1L-TMDs) for photonic applications. While various methods have been studied to compensate for lattice defects to improve the quantum yield (QY) of 1L-TMDs, exciton-exciton annihilation (EEA) is still a major nonradiative decay channel for excitons at high exciton densities. Here, we demonstrate that the combined use of a proximal Au plate and a negative electric gate bias (NEGB) for 1L-WS2 provides a dramatic enhancement of the exciton lifetime at high exciton densities with the corresponding QY enhanced by 30 times and the EEA rate constant decreased by 80 times. The suppression of EEA by NEGB is attributed to the reduction of the defect-assisted EEA process, which we also explain with our theoretical model. Our results provide a synergetic solution to cope with EEA to realize high-intensity 2D light emitters using TMDs.

Functionalizing nanophotonic structures with 2D van der Waals materials

The integration of two-dimensional (2D) van der Waals materials with nanostructures has triggered a wide spectrum of optical and optoelectronic applications. Photonic structures of conventional materials typically lack efficient reconfigurability or multifunctionality. Atomically thin 2D materials can thus generate new functionality and reconfigurability for a well-established library of photonic structures such as integrated waveguides, optical fibers, photonic crystals, and metasurfaces, to name a few. Meanwhile, the interaction between light and van der Waals materials can be drastically enhanced as well by leveraging micro-cavities or resonators with high optical confinement. The unique van der Waals surfaces of the 2D materials enable handiness in transfer and mixing with various prefabricated photonic templates with high degrees of freedom, functionalizing as the optical gain, modulation, sensing, or plasmonic media for diverse applications. Here, we review recent advances in synergizing 2D materials to nanophotonic structures for prototyping novel functionality or performance enhancements. Challenges in scalable 2D materials preparations and transfer, as well as emerging opportunities in integrating van der Waals building blocks beyond 2D materials are also discussed.

Electric-Field-Driven Trion Drift and Funneling in MoSe2 Monolayer

Excitons, electron-hole pairs in semiconductors, can be utilized as information carriers with a spin or valley degree of freedom. However, manipulation of excitons' motion is challenging because of their charge-neutral characteristic and short recombination lifetimes. Here we demonstrate electric-field-driven drift and funneling of charged excitons (i.e., trions) toward the center of a MoSe2 monolayer. Using a simple bottom-gate device, we control the electric fields in the vicinity of the suspended monolayer, which increases the trion density and pulls down the layer. We observe that locally excited trions are subjected to electric force and, consequently, drift toward the center of the stretched layer. The exerting electric force on the trion is estimated to be 102-104 times stronger than the strain-induced force in the stretched monolayer, leading to the successful observation of trion drift under continuous-wave excitation. Our findings provide a new route for manipulating trions and achieving new types of optoelectronic devices.

2D Material Infrared Photonics and Plasmonics

Two-dimensional (2D) materials including graphene, transition metal dichalcogenides, black phosphorus, MXenes, and semimetals have attracted extensive and widespread interest over the past years for their many intriguing properties and phenomena, underlying physics, and great potential for applications. The vast library of 2D materials and their heterostructures provides a diverse range of electrical, photonic, mechanical, and chemical properties with boundless opportunities for photonics and plasmonic devices. The infrared (IR) regime, with wavelengths across 0.78 μm to 1000 μm, has particular technological significance in industrial, military, commercial, and medical settings while facing challenges especially in the limit of materials. Here, we present a comprehensive review of the varied approaches taken to leverage the properties of the 2D materials for IR applications in photodetection and sensing, light emission and modulation, surface plasmon and phonon polaritons, non-linear optics, and Smith-Purcell radiation, among others. The strategies examined include the growth and processing of 2D materials, the use of various 2D materials like semiconductors, semimetals, Weyl-semimetals and 2D heterostructures or mixed-dimensional hybrid structures, and the engineering of light-matter interactions through nanophotonics, metasurfaces, and 2D polaritons. Finally, we give an outlook on the challenges in realizing high-performance and ambient-stable devices and the prospects for future research and large-scale commercial applications.

Conversion of Classical Light Emission from a Nanoparticle-Strained WSe2 Monolayer into Quantum Light Emission via Electron Beam Irradiation

Solid-state single photon emitters (SPEs) within atomically thin transition metal dichalcogenides (TMDs) have recently attracted interest as scalable quantum light sources for quantum photonic technologies. Among TMDs, WSe₂ monolayers (MLs) are promising for the deterministic fabrication and engineering of SPEs using local strain fields. The ability to reliably produce isolatable SPEs in WSe₂ is currently impeded by the presence of numerous spectrally overlapping states that occur at strained locations. Here nanoparticle (NP) arrays with precisely defined positions and sizes are employed to deterministically create strain fields in WSe₂ MLs, thus enabling the systematic investigation and control of SPE formation. Using this platform, electron beam irradiation at NP-strained locations transforms spectrally overlapped sub-bandgap emission states into isolatable, anti-bunched quantum emitters. The dependence of the emission spectra of WSe₂ MLs as a function of strain magnitude and exposure time to electron beam irradiation is quantified and provides insight into the mechanism for SPE production. Excitons selectively funnel through strongly coupled sub-bandgap states introduced by electron beam irradiation, which suppresses spectrally overlapping emission pathways and leads to measurable anti-bunched behavior. The findings provide a strategy to generate isolatable SPEs in 2D materials with a well-defined energy range.

Recent progress of two-dimensional heterostructures for thermoelectric applications

The rapid development of synthesis and fabrication techniques has opened up a research upsurge in two-dimensional (2D) material heterostructures, which have received extensive attention due to their superior physical and chemical properties. Currently, thermoelectric energy conversion is an effective means to deal with the energy crisis and increasingly serious environmental pollution. Therefore, an in-depth understanding of thermoelectric transport properties in 2D heterostructures is crucial for the development of micro-nano energy devices. In this review, the recent progress of 2D heterostructures for thermoelectric applications is summarized in detail. Firstly, we systematically introduce diverse theoretical simulations and experimental measurements of the thermoelectric properties of 2D heterostructures. Then, the thermoelectric applications and performance regulation of several common 2D materials, as well as in-plane heterostructures and van der Waals heterostructures, are also discussed. Finally, the challenges of improving the thermoelectric performance of 2D heterostructures materials are summarized, and related prospects are described.

Continuous Color-Tunable Light-Emitting Devices Based on Compositionally Graded Monolayer Transition Metal Dichalcogenide Alloys

The diverse series of transition metal dichalcogenide (TMDC) materials has been employed in various optoelectronic applications, such as photodetectors, light-emitting diodes, and lasers. Typically, the detection or emission range of optoelectronic devices is unique to the bandgap of the active material. Therefore, to improve the capability of these devices, extensive efforts have been devoted to tune the bandgap, such as gating, strain, and dielectric engineering. However, the controllability of these methods is severely limited (typically ≈0.1 eV). In contrast, alloying TMDCs is an effective approach that yields a composition-dependent bandgap and enables light emissions over a wide range. In this study, a color-tunable light-emitting device using compositionally graded TMDC alloys is fabricated. The monolayer WS₂ /WSe₂ alloy grown by chemical vapor deposition shows a spatial gradient in the light-emission energy, which varies from 2.1 to 1.7 eV. This alloy is incorporated in an electrolyte-based light-emitting device structure that can tune the recombination zone laterally. Thus, a continuous and reversible color-tunable light-emitting device is successfully fabricated by controlling the light-emitting positions. The results provide a new approach for exploring monolayer semiconductor-based broadband optical applications.

Tunable Strong Coupling in Transition Metal Dichalcogenide Nanowires

Subwavelength optical resonators with spatiotemporal control of light are essential to the miniaturization of optical devices. In this work, chemically synthesized transition metal dichalcogenide (TMDC) nanowires are exploited as a new type of dielectric nanoresonators to simultaneously support pronounced excitonic and Mie resonances. Strong light-matter couplings and tunable exciton polaritons in individual nanowires are demonstrated. In addition, the excitonic responses can be reversibly modulated with excellent reproducibility, offering the potential for developing tunable optical nanodevices. Being in the mobile colloidal state with highly tunable optical properties, the TMDC nanoresonators will find promising applications in integrated active optical devices, including all-optical switches and sensors.

Ultrafast and Polarization-Sensitive ReS2/ReSe2 Heterostructure Photodetectors with Ambipolar Photoresponse

Recently, two-dimensional (2D) van der Waals (vdWs) heterostructures provided excellent and fascinating platforms for advanced engineering in high-performance optoelectronic devices. Herein, novel ReS2/ReSe2 heterojunction phototransistors are constructed and explored systematically that display high responsivity, wavelength-dependent ambipolar photoresponse (negative and positive), ultrafast and polarization-sensitive detection capability. This photodetector exhibits a positive photoresponse from UV to visible spectrum (760 nm) with high photoresponsivities about 126.56 and 16.24 A/W under 350 and 638 nm light illumination, respectively, with a negative photoresponse over 760 nm, which is mainly ascribed to the ambipolar photoresponse modulated by gate voltage. In addition, profound linear polarization sensitivity is demonstrated with a dichroic ratio of about ∼1.2 at 638 nm and up to ∼2.0 at 980 nm, primarily owing to the wavelength-dependent absorption anisotropy and the stagger alignment of the crystal. Beyond static photodetection, the dynamic photoresponse of this vdWs device presents an ultrafast and repeatable photoswitching performance with a cutoff frequency (f3dB) exceeding 100 kHz. Overall, this study reveals the great potential of 2D ReX2-based vdWs heterostructures for high-performance, ultrafast, and polarization-sensitive broadband photodetectors.

Brightening of a dark monolayer semiconductor via strong light-matter coupling in a cavity

Engineering the properties of quantum materials via strong light-matter coupling is a compelling research direction with a multiplicity of modern applications. Those range from modifying charge transport in organic molecules, steering particle correlation and interactions, and even controlling chemical reactions. Here, we study the modification of the material properties via strong coupling and demonstrate an effective inversion of the excitonic band-ordering in a monolayer of WSe₂ with spin-forbidden, optically dark ground state. In our experiments, we harness the strong light-matter coupling between cavity photon and the high energy, spin-allowed bright exciton, and thus creating two bright polaritonic modes in the optical bandgap with the lower polariton mode pushed below the WSe₂ dark state. We demonstrate that in this regime the commonly observed luminescence quenching stemming from the fast relaxation to the dark ground state is prevented, which results in the brightening of this intrinsically dark material. We probe this effective brightening by temperature-dependent photoluminescence, and we find an excellent agreement with a theoretical model accounting for the inversion of the band ordering and phonon-assisted polariton relaxation.

Here, the authors show brightening of dark excitons by strong coupling between cavity photons and high energy, spin-allowed, bright excitons in monolayer WSe₂. In this regime, the commonly observed photoluminescence quenching stemming from the fast relaxation to the dark ground state is prevented.

Science of 2.5 dimensional materials: paradigm shift of materials science toward future social innovation

The past decades of materials science discoveries are the basis of our present society - from the foundation of semiconductor devices to the recent development of internet of things (IoT) technologies. These materials science developments have depended mainly on control of rigid chemical bonds, such as covalent and ionic bonds, in organic molecules and polymers, inorganic crystals and thin films. The recent discovery of graphene and other two-dimensional (2D) materials offers a novel approach to synthesizing materials by controlling their weak out-of-plane van der Waals (vdW) interactions. Artificial stacks of different types of 2D materials are a novel concept in materials synthesis, with the stacks not limited by rigid chemical bonds nor by lattice constants. This offers plenty of opportunities to explore new physics, chemistry, and engineering. An often-overlooked characteristic of vdW stacks is the well-defined 2D nanospace between the layers, which provides unique physical phenomena and a rich field for synthesis of novel materials. Applying the science of intercalation compounds to 2D materials provides new insights and expectations about the use of the vdW nanospace. We call this nascent field of science '2.5 dimensional (2.5D) materials,' to acknowledge the important extra degree of freedom beyond 2D materials. 2.5D materials not only offer a new field of scientific research, but also contribute to the development of practical applications, and will lead to future social innovation. In this paper, we introduce the new scientific concept of this science of '2.5D materials' and review recent research developments based on this new scientific concept.

Understanding the Synergistic Oxidation in Dichalcogenides through Electrochemiluminescence Blinking at Millisecond Resolution

The oxidation of transition metal dichalcogenides (TMDCs) has been extensively studied and applied in electronics, optics, and energy sources because of its tunable structure and performance. However, due to the lack of appropriate technology, dynamically observe the oxidation process remains an arduous task. Herein, the synergistic oxidation between edge and basal plane in molybdenum disulfide (MoS₂ ) is observed through electrogenerated chemiluminescence (ECL) blinking with a millisecond resolution. In addition, the ECL method provides a simple, convenient, and quick way to judge structural changes. The transient elevation of the ECL intensity proved the intermittent doping of oxygen at MoS₂ , which generates O-atom active sites. High ECL intensity enhanced from the produced hydroperoxide intermediates eases the monitoring of MoS₂ particles. Further study shows that the formation of sulfur vacancies at MoS₂ , by the edge activation of hydrogen peroxide and the migration of oxygen to the basal plane, is more conducive to oxygen doping that favors the formation of MoOMo as new active sites to induce bursts. The revealing of sulfur vacancy-governed blinking from MoS₂ indicates a complex interaction between oxygen and MoS₂ . The same phenomenon is observed on tungsten disulfide (WS₂ ), which provides new information about the oxidation feature of 2D dichalcogenides.

Nanotherapies for sepsis by regulating inflammatory signals and reactive oxygen and nitrogen species: New insight for treating COVID-19

SARS-CoV-2 has caused up to 127 million cases of COVID-19. Approximately 5% of COVID-19 patients develop severe illness, and approximately 40% of those with severe illness eventually die, corresponding to more than 2.78 million people. The pathological characteristics of COVID-19 resemble typical sepsis, and severe COVID-19 has been identified as viral sepsis. Progress in sepsis research is important for improving the clinical care of these patients. Recent advances in understanding the pathogenesis of sepsis have led to the view that an uncontrolled inflammatory response and oxidative stress are core factors. However, in the traditional treatment of sepsis, it is difficult to achieve a balance between the inflammation, pathogens (viruses, bacteria, and fungi), and patient tolerance, resulting in high mortality of patients with sepsis. In recent years, nanomaterials mediating reactive oxygen and nitrogen species (RONS) and the inflammatory response have shown previously unattainable therapeutic effects on sepsis. Despite these advantages, RONS and inflammatory response-based nanomaterials have yet to be extensively adopted as sepsis therapy. To the best of our knowledge, no review has yet discussed the pathogenesis of sepsis and the application of nanomaterials. To help bridge this gap, we discuss the pathogenesis of sepsis related to inflammation and the overproduction RONS, which activate pathogen-associated molecular pattern (PAMP)-pattern recognition receptor (PRR) and damage-associated molecular pattern (DAMP)-PRR signaling pathways. We also summarize the application of nanomaterials in the treatment of sepsis. As highlighted here, this strategy could synergistically improve the therapeutic efficacy against both RONS and inflammation in sepsis and may prolong survival. Current challenges and future developments for sepsis treatment are also summarized.

Room-Temperature Chiral Light-Emitting Diode Based on Strained Monolayer Semiconductors

Room-temperature chiral light sources whose optical helicity can be electrically switched are one of the most important devices for future optical quantum information processing. The emerging valley degree of freedom in monolayer semiconductors allows generation of chiral luminescence via valley polarization. However, relevant valley-polarized light-emitting diodes (LEDs) have only been achieved at low temperatures (typically below 80 K). Here, a room-temperature chiral LED with strained transition metal dichalcogenide monolayers is realized. Spatially resolved polarization spectroscopy reveals that strain effects are crucial to yielding robust valley-polarized electroluminescence. The broken threefold rotational symmetry of strained monolayers induce inequivalent valley drifts at the K/K' valleys, resulting in different amounts of spin recombination driven by electric fields. Based on this scenario, ideally strained conditions are designed for LEDs on flexible substrates, in which the helicity of room-temperature valley-polarized electroluminescence is electrically tuned. The results provide a new pathway for practical chiral light sources based on monolayer semiconductors.

Spatial Control of Dynamic p-i-n Junctions in Transition Metal Dichalcogenide Light-Emitting Devices

Emerging transition metal dichalcogenides (TMDCs) offer an attractive platform for investigating functional light-emitting devices, such as flexible devices, quantum and chiral devices, high-performance optical modulators, and ultralow threshold lasers. In these devices, the key operation is to control the light-emitting position, that is, the spatial position of the recombination zone to generate electroluminescence, which permits precise light guides/passes/confinement to ensure favorable device performance. Although various structures of TMDC light-emitting devices have been demonstrated, including the transistor configuration and heterostructured diodes, it is still difficult to tune the light-emitting position precisely owing to the structural device complexity. In this study, we fabricated two-terminal light-emitting devices with chemically synthesized WSe₂, MoSe₂, and WS₂ monolayers, and performed direct observations of their electroluminescence, from which we discovered a divergence in their light-emitting positions. Subsequently, we propose a method to associate spatial electroluminescence imaging with transport properties among different samples; consequently, a common rule for determining the locations of recombination zones is revealed. Owing to dynamic carrier accumulations and p-i-n junction formations, the light-emitting positions in electrolyte-based devices can be tuned continuously. The proposed method will expand the device applicability for designing functional optoelectronic applications based on TMDCs.

ZnO/CPAN Modified Contact Lens with Antibacterial and Harmful Light Reduction Capabilities

Compared with traditional glasses, the comfortable and convenient contact lens (CL) has seen an upsurge among the public. However, due to the lack of antibacterial properties of ordinary CLs, the risk of eye infection is greatly increased accordingly. On the other hand, ordinary CLs also cannot effectively reduce the short-wavelength blue light emitted from electronic products, such as mobile phones and computers. Aiming at the above two problems, zinc oxide (ZnO)/cyclized polyacrylonitrile (CPAN) composites are developed for CL modification. After loading with ZnO/CPAN (ZC), the CL shows a broad-spectrum antibacterial property. Further experiments also prove that it can block UVB, UVA, as well as blue light selectively, under the premise of ensuring hydrophilicity and certain transparency. Theoretically, this ZC-decorated CL can fundamentally reduce the damage to the eyes from harmful light emitted by light-emitting diodes and the secretion of pro-inflammatory factors, which is thus a promising eye protection strategy for modern society.

Strong anisotropic enhancement of photoluminescence in WS2 integrated with plasmonic nanowire array

Layered transition metal dichalcogenides (TMDCs) have shown great potential for a wide range of applications in photonics and optoelectronics. Nevertheless, valley decoherence severely randomizes its polarization which is important to a light emitter. Plasmonic metasurface with a unique way to manipulate the light-matter interaction may provide an effective and practical solution. Here by integrating TMDCs with plasmonic nanowire arrays, we demonstrate strong anisotropic enhancement of the excitonic emission at different spectral positions. For the indirect bandgap transition in bilayer WS2, multifold enhancement can be achieved with the photoluminescence (PL) polarization either perpendicular or parallel to the long axis of nanowires, which arises from the coupling of WS2 with localized or guided plasmon modes, respectively. Moreover, PL of high linearity is obtained in the direct bandgap transition benefiting from, in addition to the plasmonic enhancement, the directional diffraction scattering of nanowire arrays. Our method with enhanced PL intensity contrasts to the conventional form-birefringence based on the aspect ratio of nanowire arrays where the intensity loss is remarkable. Our results provide a prototypical plasmon-exciton hybrid system for anisotropic enhancement of the PL at the nanoscale, enabling simultaneous control of the intensity, polarization and wavelength toward practical ultrathin photonic devices based on TMDCs.

2D Homojunctions for Electronics and Optoelectronics

In the post-Moore era, 2D materials with rich physical properties have attracted widespread attention from the scientific and industrial communities. Among 2D materials, the 2D homojunctions are of great promise in designing novel electronic and optoelectronic devices due to their unique geometries and properties such as homogeneous components, perfect lattice matching, and efficient charge transfer at the interface. In this article, a pioneering review focusing on the structural design and device application of 2D homojunctions such as p-n homojunctions, heterophase homojunctions, and layer-engineered homojunctions is provided. The preparation strategies to construct 2D homojunctions including vapor-phase deposition, lithium intercalation, laser irradiation, chemical doping, electrostatic doping, and photodoping are summarized in detail. Specifically, a careful review on the applications of the 2D homojunctions in electronics (e.g., field-effect transistors, rectifiers, and inverters) and optoelectronics (e.g., light-emitting diodes, photovoltaics, and photodetectors) is provided. Eventually, the current challenges and future perspectives are commented for promoting the rapid development of 2D homojunctions.

Microsphere-coupled light emission control of van der Waals heterostructures

Two-dimensional transition metal dichalcogenides (TMDCs) integrated into photonic structures provide an intriguing playground for the development of novel optoelectronic devices with improved performance. Here, we show the enhanced light emission from TMDC based van der Waals heterostructures through coupling with microsphere cavities. We observe cavity-induced emission enhancement of TMDC materials which varies by an order of magnitude, depending on the size of the microsphere and thickness of the supporting oxide substrate. Furthermore, we demonstrate microsphere cavity-enhanced electroluminescence of a van der Waals light emitting transistor, showing the potential of 2D material based hybrid optoelectronic structures.

Manipulation of Valley Pseudospin by Selective Spin Injection in Chiral Two-Dimensional Perovskite/Monolayer Transition Metal Dichalcogenide Heterostructures

Monolayer two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted great interest in spintronics and valleytronics due to the spin-valley locking effect. To efficiently control and manipulate the valley pseudospin is of paramount importance for valley-based electronics and optoelectronics. A variety of strategies have been developed to address the valley pseudospin including optical, electrical, and magnetic methods; nonetheless, they involve either below liquid-nitrogen temperature or an external magnetic field, which increases the cost and complexity of the devices. Here, we report a straightforward way to manipulate valley polarization in monolayer TMDs via selective spin injection in chiral 2D perovskite/monolayer TMD (e.g., MoS₂ and WSe₂) van der Waals heterostructures without requiring an external magnetic field or specially designed device structures. We show the dangling-bond-free vdW interface can allow an impressive average spin injection efficiency of 78% to produce persistent valley polarization in monolayer MoS₂ (WSe₂) over 10% from liquid-nitrogen temperature to above 200 K. We attribute the valley polarization of monolayer MoS₂ (WSe₂) to selective spin injection from chiral 2D perovskites, which can effectively introduce population imbalance between valleys in monolayer MoS₂ (WSe₂). Our findings provide an alternative strategy to manipulate the valley polarization in TMDs without requiring circularly polarized light excitation, below liquid-nitrogen temperature, or external magnetic field, and thus would promote the development of perovskite-based spintronic and valleytronic devices.

Ultrathin Transition Metal Chalcogenide Nanosheets Synthesized via Topotactic Transformation for Effective Cancer Theranostics

Ultrathin transition metal chalcogenide (TMC) nanosheets with ultrahigh photothermal conversion efficiency (η) and excellent stability are strongly desired in the application of photothermal therapy (PTT). However, the current synthetic methods of ultrathin TMC nanosheets have issues in obtaining uniform morphology, good dispersion, and satisfactory PTT behavior. Herein, ultrathin nanosheets of CoFe-selenide (CFS) with a finely controlled structure were prepared via a topological structural transformation process from an ultrathin CoFe-layered double hydroxide (LDH) precursor, followed by surface modification with poly(ethylene glycol) (PEG). The as-prepared CFS-PEG nanosheets inherit the ultrathin morphology of CoFe-LDH and exhibit an outstanding photothermal performance with a η of 74.5%, which is the first rank level of reported two-dimensional (2D) TMC nanosheet materials. The CFS-PEG nanosheets possess a satisfactory photoacoustic (PA) imaging capability with an ultralow detection limit (5 ppm) and simultaneously superior T₂ magnetic resonance imaging (MRI) performance with a large transverse MR relaxivity value (r₂) of 347.7 mM^-1 s^-1. Moreover, in vitro and in vivo assays verify superior anticancer activity with a dramatic photoinduced cancer cell apoptosis and tumor ablation. Therefore, a successful paradigm is provided for rational design and preparation of ultrathin TMC nanosheets in this work, holding enormous potential in cancer theranostics.

A Single Chiral Nanoparticle Induced Valley Polarization Enhancement

Valley polarization is among the most critical attributes of atomically thin materials. However, increasing contrast from monolayer transition metal dichalcogenides (TMDs) has so far been challenging. In this work, a large degree of circular polarization up to 45% from a monolayer WS₂ is achieved at room temperature by using a single chiral plasmonic nanoparticle. The increased contrast is attributed to the selective enhancement of both the excitation and the emission rate having one particular handedness of the circular polarization, together with accelerated radiative recombination of valley excitons due to the Purcell effect. The experimental results are corroborated by the optical simulation using the finite-difference time-domain (FDTD) method. Additionally, the single chiral nanoparticle enables the observation of valley-polarized luminescence with a linear excitation. The results provide a promising pathway to enhance valley contrast from monolayer TMDs and utilize them for nanophotonic devices.

Plasmonically enabled two-dimensional material-based optoelectronic devices

Two-dimensional (2D) materials, such as graphene, transition metal dichalcogenides, black phosphorus and hexagonal boron nitride, have been intensively investigated as building blocks for optoelectronic devices in the past few years. Very recently, significant efforts have been devoted to the improvement of the optoelectronic performances of 2D materials, which are restricted by their intrinsically low light absorption due to the ultrathin thickness. Making use of the plasmonic effects of metal nanostructures and intrinsic plasmon excitation in graphene has been shown to be one of the promising strategies. In this minireview, recent progress in 2D material-based optoelectronics enabled by the plasmonic effects is highlighted. A perspective on more possibilities in plasmon-assisted 2D material-based optoelectronic applications will also be provided.

Hierarchical Core-Shell Structure of 2D VS2@VC@N-Doped Carbon Sheets Decorated by Ultrafine Pd Nanoparticles: Assembled in a 3D Rosette-like Array on Carbon Fiber Microelectrode for Electrochemical Sensing

The development of two-dimensional (2D) nanohybrid materials with heterogeneous components in nanoscale and three-dimensional (3D) well-ordered assembly in microscale has been regarded as an effective way to improve their overall performances by the synergistic coupling of the optimized structure and composition. In this work, we reported the design and synthesis of a new type of hierarchically core-shell structure of 2D VS₂@VC@N-doped carbon (NC) sheets decorated by ultrafine Pd nanoparticles (PdNPs), which were vertically grown on carbon fiber (CF) and assembled into a unique 3D rosette-like array. The resultant VS₂@VC@NC-PdNPs modified CF microelectrode integrated the structural and electrochemical properties of the heterogeneous hybridization of core-shell VS₂@VC@NC-PdNPs sheets with a unique rosette-like array structure, and gave rise to a significant improvement in terms of electron transfer ability, electrocatalytic activity, stability, and biocompatibility. Under the optimized conditions, the VS₂@VC@NC-PdNPs modified CF microelectrode demonstrated excellent electrochemical sensing performance towards biomarker hydrogen peroxide (H₂O₂) including a high sensitivity of 152.7 μA cm^-2 mM^-1, a low detection limit of 50 nM (a signal-to-noise ratio of 3:1), as well as good reproducibility and anti-interference ability, which could be used for the real-time in situ electrochemical detection of H₂O₂ in live cancer cells and cancer tissue. The remarkable performances of the proposed nanohybrid microelectrode will have a profound impact on the design of diverse 2D layered materials as a promising candidate for electrochemical biosensing applications.

Polarization-Dependent Optical Properties and Optoelectronic Devices of 2D Materials

The development of optoelectronic devices requires breakthroughs in new material systems and novel device mechanisms, and the demand recently changes from the detection of signal intensity and responsivity to the exploration of sensitivity of polarized state information. Two-dimensional (2D) materials are a rich family exhibiting diverse physical and electronic properties for polarization device applications, including anisotropic materials, valleytronic materials, and other hybrid heterostructures. In this review, we first review the polarized-light-dependent physical mechanism in 2D materials, then present detailed descriptions in optical and optoelectronic properties, involving Raman shift, optical absorption, and light emission and functional optoelectronic devices. Finally, a comment is made on future developments and challenges. The plethora of 2D materials and their heterostructures offers the promise of polarization-dependent scientific discovery and optoelectronic device application.

Probing Charge Carrier Transport and Recombination Pathways in Monolayer MoS2/WS2 Heterojunction Photoelectrodes

Monolayer heterojunctions such as MoS₂/WS₂ are attractive for solar energy conversion applications because the interfacial electric field spatially separates charge carriers in less than 100 fs. Photoelectrochemical cells represent an intriguing platform to collect the spatially separated carriers. However, the recombination, transport, and interfacial charge transfer processes that take place following the ultrafast charge separation step have not been investigated. Here we demonstrate novel charge recombination and transport pathways in monolayer MoS₂/WS₂ photoelectrochemical cells by spatially resolving the net collection of carriers (i.e., the photocurrent) at the single nanosheet level. We discovered an excitation-wavelength-dependent recombination pathway that depends on the heterojunction stacking configuration and the carrier generation profile in the heterostructure. Photocurrent mapping measurements revealed that charge transport occurs parallel to the layers over micrometer-scale distances even though the indium tin oxide electrode and liquid electrolyte provide efficient charge extraction pathways via intimate electron- and hole-selective contacts. Our results reveal how composition heterogeneity influences the performance of bulk heterojunction electrodes made from randomly oriented nanosheets and provide critical insight into the design of efficient heterojunction photoelectrodes for solar energy conversion applications.

Surface group-modified MXene nano-flake doping of monolayer tungsten disulfides

Exciton/trion-involved optoelectronic properties have attracted exponential amount of attention for various applications ranging from optoelectronics, valleytronics to electronics. Herein, we report a new chemical (MXene) doping strategy to modulate the negative trion and neutral exciton for achieving high photoluminescence yield of atomically thin transition metal dichalcogenides, enabled by the regulation of carrier densities to promote electron-bound trion-to-exciton transition via charge transfer from TMDCs to MXene. As a proof of concept, the MXene nano-flake-doped tungsten disulfide is demonstrated to obtain an enhanced PL efficiency of up to ∼five folds, which obviously exceeds the reported efficiency upon electrical and/or plasma doping strategies. The PL enhancement degree can also be modulated by tuning the corresponding surface functional groups of MXene nano-flakes, reflecting that the electron-withdrawing functional groups play a vital role in this charge transfer process. These findings offer promising clues to control the optoelectronic properties of TMDCs and expand the scope of the application of MXene nano-flakes, suggesting a possibility to construct a new heterostructure junction based on MXenes and TMDCs.

Exciton Polarization and Renormalization Effect for Optical Modulation in Monolayer Semiconductors

The ideal quantum confinement structure of monolayer semiconductors offers prominent optical modulation capabilities that are mediated by enhanced many-body interactions. Herein, we establish an electrolyte-gating method for tuning the luminescence properties that are in transition metal dichalcogenide (TMDC) monolayers. We fabricate electric double-layer capacitors on TMDC/graphite heterostructures to investigate electric-field- and carrier-density-dependent photoluminescence. The exciton peak energy initially shows a slight quadratic red shift of ∼1 meV without carrier accumulations, which is caused by the quantum-confined Stark effect. In contrast, the exciton resonance exhibits a larger red shift up to 10 meV with the accumulated carrier density above 10¹³ cm^-2. These results indicate that the optical transitions can be largely modulated by the carrier density control in S- and Se-based TMDCs, as triggered by the doping-induced band gap renormalization effect. To further inspire this modulation capability, we also apply our method to electrolyte-based TMDC light-emitting devices. Biasing solely in electrolyte-induced p-i-n junctions yields pronounced red shifts up to 40 meV for exciton and trion electroluminescence. Consequently, our approach reveals that the doping effects in the high-carrier-density regimes are potentially significant for efficient optical modulation in monolayer semiconductors.

Enhanced excitation and emission from 2D transition metal dichalcogenides with all-dielectric nanoantennas

The recently emerged concept of all-dielectric nanophotonics based on optical Mie resonances in high-index dielectric nanoparticles has proven to be a promising pathway to boost light-matter interactions at the nanoscale. In this work, we discuss the opportunities enabled by the interaction of dielectric nanoresonators with 2D transition metal dichalcogenides (2D TMDCs), leading to weak and strong coupling regimes. We perform a comprehensive analysis of bright exciton photoluminescence (PL) enhancement from various 2D TMDCs, including WS₂, MoS₂, WSe₂, and MoSe₂ via their coupling to Mie resonances of a silicon nanoparticle. For each case, we find the system parameters corresponding to maximal PL enhancement taking into account excitation rate, Purcell factor and radiation efficiency. We demonstrate numerically that all-dielectric Si nanoantennas can significantly enhance the PL intensity from 2D TMDC by a factor of hundred through precise optimization of the geometrical and material parameters. Our results may be useful for high-efficiency 2D TMDC-based optoelectronic, nanophotonic, and quantum optical devices.

WS2 monolayer-based light-emitting devices in a vertical p-n architecture

2D semiconductors represent an exciting new material class with great potential for optoelectronic devices. In particular, WS2 monolayers are promising candidates for light-emitting devices (LEDs) due to their direct band gap with efficient recombination in the red spectral range. Here, we present a novel LED architecture by embedding exfoliated WS2 monolayer flakes into a vertical p-n layout using organic p- and inorganic n-supporting layers. Laser lithography was applied to define the current path perpendicular to the WS2 flake. The devices exhibit rectifying behavior and emit room temperature electroluminescence with luminance up to 50 cd m-2 in the red spectral range.

High-Performance WS2 Monolayer Light-Emitting Tunneling Devices Using 2D Materials Grown by Chemical Vapor Deposition

The solid progress in the study of a single two-dimensional (2D) material underpins the development for creating 2D material assemblies with various electronic and optoelectronic properties. We introduce an asymmetric structure by stacking monolayer semiconducting tungsten disulfide, metallic graphene, and insulating boron nitride to fabricate numerous red channel light-emitting devices (LEDs). All the 2D crystals were grown by chemical vapor deposition (CVD), which has great potential for future industrial scale-up. Our LEDs exhibit visibly observable electroluminescence (EL) at both 5.5 V forward and 7.0 V backward biasing, which correlates well with our asymmetric design. The red emission can last for at least several minutes, and the success rate of the working device that can emit detectable EL is up to 80%. In addition, we show that sample degradation is prone to happen when a continuing bias, much higher than the threshold voltage, is applied. Our success of using high-quality CVD-grown 2D materials for red light emitters is expected to provide the basis for flexible and transparent displays.

Enhanced Performance of a CVD MoS2 Photodetector by Chemical in Situ n-Type Doping

Transition metal dichalcogenides (TMDs) are a category of promising two-dimensional (2D) materials for the optoelectronic devices, and their unique characteristics include tunable band gap, nondangling bonds as well as compatibility to large-scale fabrication, for instance, chemical vapor deposition (CVD). MoS₂ is one of the first TMDs that is well studied in the photodetection area widely. However, the low photoresponse restricts its applications in photodetectors unless the device is applied with ultrahigh source-drain voltage ( V_DS) and gate voltage ( V_GS). In this work, the photoresponse of a MoS₂ photodetector was improved by a chemical in situ doping method using gold chloride hydrate. The responsivity and specific detectivity were increased to 99.9 A/W and 9.4 × 10¹² Jones under low V_DS (0.1 V) and V_GS (0 V), which are 14.6 times and 4.8 times higher than those of a pristine photodetector, respectively. The photoresponse enhancement results from chlorine n-type doping in CVD MoS₂ which reduces the trapping of photoinduced electrons and promotes the photogating effect. This novel doping strategy leads to great applications of high-performance MoS₂ photodetectors potentially and opens a new avenue to enhance photoresponse for other 2D materials.

Theoretical study on the intrinsic properties of In2Se3/MoS2 as a photocatalyst driven by near-infrared, visible and ultraviolet light

Two-dimensional photocatalysts with full optical absorption have attracted widespread attention for water splitting and pollutant degradation, but only few single materials can meet this criterion.

Valley-Selective Response of Nanostructures Coupled to 2D Transition-Metal Dichalcogenides

Monolayer (1L) transition-metal dichalcogenides (TMDCs) are attractive materials for several optoelectronic applications because of their strong excitonic resonances and valley-selective response. Valley excitons in 1L-TMDCs are formed at opposite points of the Brillouin zone boundary, giving rise to a valley degree of freedom that can be treated as a pseudospin, and may be used as a platform for information transport and processing. However, short valley depolarization times and relatively short exciton lifetimes at room temperature prevent using valley pseudospins in on-chip integrated valley devices. Recently, it was demonstrated how coupling these materials to optical nanoantennas and metasurfaces can overcome this obstacle. Here, we review the state-of-the-art advances in valley-selective directional emission and exciton sorting in 1L-TMDC mediated by nanostructures and nanoantennas. We briefly discuss the optical properties of 1L-TMDCs paying special attention to their photoluminescence/absorption spectra, dynamics of valley depolarization, and the valley Hall effect. Then, we review recent works on nanostructures for valley-selective directional emission from 1L-TMDCs.