Charge-Trapping-Induced Non-Ideal Behaviors in Organic Field-Effect Transistors

Solution-Processed Polymer Dielectric Interlayer for Low-Voltage, Unipolar n-Type Organic Field-Effect Transistors

The integration of organic electronic circuits into real-life applications compels the fulfillment of a range of requirements, among which the ideal operation at a low voltage with reduced power consumption is paramount. Moreover, these performance factors should be achieved via solution-based fabrication schemes in order to comply with the promise of cost- and energy-efficient manufacturing offered by an organic, printed electronic technology. Here, we propose a solution-based route for the fabrication of low-voltage organic transistors, encompassing ideal device operation at voltages below 5 V and exhibiting n-type unipolarization. This process is widely applicable to a variety of semiconducting and dielectric materials. We achieved this through the use of a photo-cross-linked, low-k dielectric interlayer, which is used to fabricate multilayer dielectric stacks with areal capacitances of up to 40 nF/cm2 and leakage currents below 1 nA/cm2. Because of the chosen azide-based cross-linker, the dielectric promotes n-type unipolarization of the transistors and demonstrated to be compatible with different classes of semiconductors, from conjugated polymers to carbon nanotubes and low-temperature metal oxides. Our results demonstrate a general applicability of our unipolarizing dielectric, facilitating the implementation of complementary circuitry of emerging technologies with reduced power consumption.

Retina-inspired organic neuromorphic vision sensor with polarity modulation for decoding light information

The neuromorphic vision sensor (NeuVS), which is based on organic field-effect transistors (OFETs), uses polar functional groups (PFGs) in polymer dielectrics as interfacial units to control charge carriers. However, the mechanism of modulating charge transport on basis of PFGs in devices is unclear. Here, the carboxyl group is introduced into polymer dielectrics in this study, and it can induce the charge transfer process at the semiconductor/dielectric interfaces for effective carrier transport, giving rise to the best device mobility up to 20 cm2 V-1 s-1 at a low operating voltage of -1 V. Furthermore, the polarity modulation effect could further increase the optical figures of merit in NeuVS devices by at least an order of magnitude more than the devices using carboxyl group-free polymer dielectrics. Additionally, devices containing carboxyl groups improved image sensing for light information decoding with 52 grayscale signals and memory capabilities at an incredibly low power consumption of 1.25 fJ/spike. Our findings provide insight into the production of high-performance polymer dielectrics for NeuVS devices.

Protonated Organic Semiconductors: Origin of Water-Induced Charge-Trap Generation

Despite dramatic improvements in the electronic characteristics of organic semiconductors, the low operational stability of organic field-effect transistors (OFETs) hinders their direct use in practical applications. Although the literature contains numerous reports on the effects of water on the operational stability of OFETs, the underlying mechanisms of trap generation induced by water remain unclear. Here, a protonation-induced trap generation of organic semiconductors is proposed as a possible origin of the operational instability in organic field-effect transistors. Spectroscopic and electronic investigation techniques combined with simulations reveal that the direct protonation of organic semiconductors by water during operation may be responsible for the trap generation induced by bias stress; this phenomenon is independent of the trap generation at an insulator surface. In addition, the same feature occurred in small-bandgap polymers with fused thiophene rings irrespective of their crystalline ordering, implying the generality of protonation induced trap generation in various polymer semiconductors with a small bandgap. The finding of the trap-generation process provides new perspectives for achieving greater operational stability of organic field-effect transistors.

Synergistic Effect of Solvent Vapor Annealing and Chemical Doping for Achieving High-Performance Organic Field-Effect Transistors with Ideal Electrical Characteristics

Contact resistance and charge trapping are two key obstacles, often intertwined, that negatively impact on the performance of organic field-effect transistors (OFETs) by reducing the overall device mobility and provoking a nonideal behavior. Here, we expose organic semiconductor (OSC) thin films based on blends of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT-C8) with polystyrene (PS) to (i) a CH₃CN vapor annealing process, (ii) a doping I₂/water procedure, and (iii) vapors of I₂/CH₃CN to simultaneously dope and anneal the films. After careful analysis of the OFET electrical characteristics and by performing local Kelvin probe force microscopy studies, we found that the vapor annealing process predominantly reduces interfacial shallow traps, while the chemical doping of the OSC film is responsible for the diminishment of deeper traps and promoting a significant reduction of the contact resistance. Remarkably, the devices treated with I₂/CH₃CN reveal ideal electrical characteristics with a low level of shallow/deep traps and a very high and almost gate-independent mobility. Hence, this work demonstrates the promising synergistic effects of performing simultaneously a solvent vapor annealing and doping procedure, which can lead to trap-free OSC films with negligible contact resistance problems.

Multimodal-Synergistic-Modulation Neuromorphic Imaging Systems for Simulating Dry Eye Imaging

Inspired by human eyes, the neuromorphic visual system employs a highly efficient imaging and recognition process, which offers tremendous advantages in image acquisition, data pre-processing, and dynamic storage. However, it is still an enormous challenge to simultaneously simulate the structure, function, and environmental adaptive behavior of the human eye based on one device. Here, a multimodal-synergistic-modulation neuromorphic imaging system based on ultraflexible synaptic transistors is successfully presented and firstly simulates the dry eye imaging behavior at the device level. Moreover, important functions of the human visual system in relation to optoelectronic synaptic plasticity, image erasure and enhancement, real-time preprocessing, and dynamic storage are simulated by versatile devices. This work not only simplifies the complexity of traditional neuromorphic visual systems, but also plays a positive role in the publicity of biomedical eye care.

Evaluation of dosimetric characteristics of a ternary nanocomposite based on High Density Polyethylene/Bismuth Oxide/Graphene Oxide for gamma-rays

This research aims to investigate a ternary nanocomposite based on High Density Polyethylene/ Bismuth Oxide/Graphene Oxide (HDPE/Bi2O3/GO) at various concentrations. Solution method was used to fabricate the samples. FESEM-EDX mapping, AFM, TEM, XRD, XPS, FTIR, and TGA/DTG analyses were carried out on the samples. XRD analysis demonstrated a semi-crystalline behavior for the samples. TEM analysis exhibited a cauliflower-like structure of the material. The sample was irradiated by gamma-rays of 60Co source over the dose rate of 30–254 mGy/min and the electric current was measured as the response of the real-time dosimeter. Thus, various dosimetric characteristics were performed, namely linearity, angular dependence, energy dependence, bias-polarity, field size, and repeatability of the data. Results showed that response of the dosimeter was linear in the range of the investigated dose rate. The sensitivity of the 60 wt% Bi2O3 sample was measured as 3.4 nC·mGy−1. The angular response variation was 20% for normal beam incidence. The response of the dosimeter to assess the energy dependency was obtained as 2.2% at the radiation field of the 137Cs and 60Co beams. The dosimeter response was dependent on the bias-polarity, with maximum discrepancy of 11.1%. The dosimetry response was highly dependent upon the radiation field size. The repeatability of the dosimeter response was measured with standard deviation less than 1%. As well, the dosimeter response during the one-hour irradiation was stable with a standard deviation of 0.66%. Results showed that considering some correction factors, this material can be used for dosimetry of gamma-rays at the therapy level.

Evaluation of dosimetric characteristics of a ternary nanocomposite based on High Density Polyethylene/Bismuth Oxide/Graphene Oxide for gamma-rays

This research aims to investigate a ternary nanocomposite based on High Density Polyethylene/ Bismuth Oxide/Graphene Oxide (HDPE/Bi₂O₃/GO) at various concentrations. Solution method was used to fabricate the samples. FESEM-EDX mapping, AFM, TEM, XRD, XPS, FTIR, and TGA/DTG analyses were carried out on the samples. XRD analysis demonstrated a semi-crystalline behavior for the samples. TEM analysis exhibited a cauliflower-like structure of the material. The sample was irradiated by gamma-rays of ⁶⁰Co source over the dose rate of 30-254 mGy/min and the electric current was measured as the response of the real-time dosimeter. Thus, various dosimetric characteristics were performed, namely linearity, angular dependence, energy dependence, bias-polarity, field size, and repeatability of the data. Results showed that response of the dosimeter was linear in the range of the investigated dose rate. The sensitivity of the 60 wt% Bi₂O₃ sample was measured as 3.4 nC·mGy^-1. The angular response variation was 20% for normal beam incidence. The response of the dosimeter to assess the energy dependency was obtained as 2.2% at the radiation field of the ¹³⁷Cs and ⁶⁰Co beams. The dosimeter response was dependent on the bias-polarity, with maximum discrepancy of 11.1%. The dosimetry response was highly dependent upon the radiation field size. The repeatability of the dosimeter response was measured with standard deviation less than 1%. As well, the dosimeter response during the one-hour irradiation was stable with a standard deviation of 0.66%. Results showed that considering some correction factors, this material can be used for dosimetry of gamma-rays at the therapy level.

Anisotropic charge trapping in phototransistors unlocks ultrasensitive polarimetry for bionic navigation

Being able to probe the polarization states of light is crucial for applications from medical diagnostics and intelligent recognition to information encryption and bio-inspired navigation. Current state-of-the-art polarimeters based on anisotropic semiconductors enable direct linear dichroism photodetection without the need for bulky and complex external optics. However, their polarization sensitivity is restricted by the inherent optical anisotropy, leading to low dichroic ratios of typically smaller than ten. Here, we unveil an effective and general strategy to achieve more than 2,000-fold enhanced polarization sensitivity by exploiting an anisotropic charge trapping effect in organic phototransistors. The polarization-dependent trapping of photogenerated charge carriers provides an anisotropic photo-induced gate bias for current amplification, which has resulted in a record-high dichroic ratio of >10⁴, reaching over the extinction ratios of commercial polarizers. These findings further enable the demonstration of an on-chip polarizer-free bionic celestial compass for skylight-based polarization navigation. Our results offer a fundamental design principle and an effective route for the development of next-generation highly polarization-sensitive optoelectronics.

Dynamic self-stabilization in the electronic and nanomechanical properties of an organic polymer semiconductor

The field of organic electronics has profited from the discovery of new conjugated semiconducting polymers that have molecular backbones which exhibit resilience to conformational fluctuations, accompanied by charge carrier mobilities that routinely cross the 1 cm2/Vs benchmark. One such polymer is indacenodithiophene-co-benzothiadiazole. Previously understood to be lacking in microstructural order, we show here direct evidence of nanosized domains of high order in its thin films. We also demonstrate that its device-based high-performance electrical and thermoelectric properties are not intrinsic but undergo rapid stabilization following a burst of ambient air exposure. The polymer's nanomechanical properties equilibrate on longer timescales owing to an orthogonal mechanism; the gradual sweating-out of residual low molecular weight solvent molecules from its surface. We snapshot the quasistatic temporal evolution of the electrical, thermoelectric and nanomechanical properties of this prototypical organic semiconductor and investigate the subtleties which play on competing timescales. Our study documents the untold and often overlooked story of a polymer device's dynamic evolution toward stability.

Suppressing Interface Strain for Eliminating Double-Slope Behaviors: Towards Ideal Conformable Polymer Field-Effect Transistors

High-mobility polymer field-effect transistors (PFETs) are being actively explored for applications in soft electronic skin and low-cost flexible displays because of their superior solution processability, mechanical flexibility, and stretchability. However, most of high-mobility PFETs often deviate from the idealized behavior with variable mobility, large threshold voltage, and high off-state current, which masks their intrinsic properties and significantly impedes their practical applications. Here, it is first revealed that interface strain between polymer thin film and rigid substrate plays a crucial role in determining the ideality of PFETs, and demonstrate that various ideal conformable PFETs can be successfully fabricated by releasing strain. It is found that strain in film can be released by one-step peeling strategy, which can reduce π-π stacking distance and suppress generation of oxygen doped carriers, thereby obtaining linearly injected charge carriers and decreased carrier concentration in channel, eventually realizing ideal PFETs. More impressively, the fabricated ideal conformable PFET array displays outstanding conformability to curved objects, and meanwhile showing excellent organic light-emitting display driving capability. The work clarifies the effect of the interface strain on the device ideality, and strain can be effectively released by a facile peeling strategy, thus offering useful guidance for the construction of ideal conformable PFETs.

Fully integrated ultra-sensitive electronic nose based on organic field-effect transistors

Modern solid-state gas sensors approaching ppb-level limit of detection open new perspectives for process control, environmental monitoring and exhaled breath analysis. Organic field-effect transistors (OFETs) are especially promising for gas sensing due to their outstanding sensitivities, low cost and small power consumption. However, they suffer of poor selectivity, requiring development of cross-selective arrays to distinguish analytes, and environmental instability, especially in humid air. Here we present the first fully integrated OFET-based electronic nose with the whole sensor array located on a single substrate. It features down to 30 ppb limit of detection provided by monolayer thick active layers and operates in air with up to 95% relative humidity. By means of principal component analysis, it is able to discriminate toxic air pollutants and monitor meat product freshness. The approach presented paves the way for developing affordable air sensing networks for the Internet of Things.

Blurred Electrode for Low Contact Resistance in Coplanar Organic Transistors

Inefficient charge injection and transport across the electrode/semiconductor contact edge severely limits the device performance of coplanar organic thin-film transistors (OTFTs). To date, various approaches have been implemented to address the adverse contact problems of coplanar OTFTs. However, these approaches mainly focused on reducing the injection resistance and failed to effectively lower the access resistance. Here, we demonstrate a facile strategy by utilizing the blurring effect during the deposition of metal electrodes, to significantly reduce the access resistance. We find that the transition region formed by the blurring behavior can continuously tune the molecular packing and thin-film growth of organic semiconductors across the contact edge, as well as provide continuously distributed gap states for carrier tunnelling. Based on this versatile strategy, the fabricated dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) coplanar OTFT shows a high field-effect mobility of 6.08 cm² V^-1 s^-1 and a low contact resistance of 2.32 kΩ cm, comparable to the staggered OTFTs fabricated simultaneously. Our work addresses the crucial impediments for further reducing the contact resistance in coplanar OTFTs, which represents a significant step of contact injection engineering in organic devices.

Roles of interfaces in the ideality of organic field-effect transistors

Organic field-effect transistors (OFETs) are fundamental building blocks for flexible and large-area electronics due to their superior solution-processability, flexibility and stretchability. OFETs with high ideality are essential to their practical applications. In reality, however, many OFETs still suffer from non-ideal behaviors, such as gate-dependent mobility, which thus hinders the extraction of their intrinsic performance. It is much desired to gain a comprehensive understanding of the origins of these non-idealities. OFETs are primarily interface-related devices, and hence their performance and ideality are highly dependent on the interface properties between each device component. This review will focus on the recent progress in investigating the non-ideal behaviors of OFETs. In particular, the roles of interfaces, including the organic semiconductor (OSC)/dielectric interface, OSC/electrode interface and OSC/atmosphere interface, in determining the ideality of OFETs are summarized. Viable approaches through interface optimization to improve the device ideality are also reviewed. Finally, an overview of the outstanding challenges as well as the future development directions for the construction of ideal OFETs is given.

Mimicking Sensory Adaptation with Dielectric Engineered Organic Transistors

Mimicking sensory adaptation with transistors is essential for developing next-generation smart circuits. A key challenge is how to obtain controllable and reversible short-term signal decay while simultaneously maintaining long-term electrical stability. By introducing a buried dynamic-trapping interface within the dielectric layer, an organic adaptive transistor (OAT) with sensory adaptation functionality is developed. The device induces self-adaptive interfacial trapping to enable volatile shielding of the gating field, thereby leading to rapid and temporary carrier concentration decay in the conductive channel without diminishing the mobility upon a fixed voltage bias. More importantly, the device exhibits a fine-tuned decay constant ranging from 50 ms to 5 s, accurately matching the adaptation timescales in bio-systems. This not only suggests promising applications of OATs in flexible artificial intelligent elements, but also provides a strategy for engineering organic devices toward novel biomimetic functions.

Precise Control over Polymer Semiconducting Films by Tuning the Thermal Behavior of the Thin-Film State's Crystalline and Morphological Structures

The crystalline and morphological structures of polymer semiconducting films were controlled by selecting appropriate thermal properties of the polymeric chains, thereby improving polymer field-effect transistor (FET) performances. Poly(dioctyl-quaterthiophene-dioctyl-bithiazole) (PDQDB), comprising 5,5'-bithiazole and oligothiophene rings, was used as the basis for the polymer semiconductor studies. The T_g and T_m values of the thin-film state, rather than those of the bulk polymer state, were important in this study. A PDQDB film with a T_g of 101 °C in the thin-film state showed the highest maximum and average μ_FET values of 0.194 and 0.141 cm² V^-1 s^-1, respectively, in an FET device at a post-processing temperature of 100 °C. On the other hand, relatively low average μ_FET values of 0.115, 0.098, and 0.079 cm² V^-1 s^-1 were observed in FET devices prepared from PDQDB films with T_g values of 130, 165, and 180 °C, respectively, despite the dramatic increase in film crystallinity. With the variations in μ_FET, what we have noticed is that the standard deviations of the measured μ_FET values varied with the T_g values: 36.0% for the T_g = 165 °C film and 51.1% for the T_g = 180 °C film, indicating that the organic field-effect transistors performances were not uniform. These results were closely related to nano- and microscale nonuniformity in the PDQDB film structure in the presence of excessively activated grain structures. These variations were correlated with the crystalline and morphological structures of the PDQDB films prepared under various processing conditions.

Recent Efforts in Understanding and Improving the Nonideal Behaviors of Organic Field-Effect Transistors

Over the past three decades, the mobility of organic field-effect transistors (OFETs) has been improved from 10-5 up to over 10 cm2 V-1 s-1, which reaches or has already satisfied the requirements of demanding applications. However, pronounced nonideal behaviors in current-voltage characteristics are commonly observed, which indicates that the reported mobilities may not truly reflect the device properties. Herein, a comprehensive understanding of the origins of several observed nonidealities (downward, upward, double-slope, superlinear, and humped transfer characteristics) is summarized, and how to extract comparatively reliable mobilities from nonideal behaviors in OFETs is discussed. Combining an overview of the ideal and state-of-the-art OFETs, considerable possible approaches are also provided for future OFETs.

Fabrication of Two-Dimensional Crystalline Organic Films by Tilted Spin Coating for High-Performance Organic Field-Effect Transistors

We developed a facile method for fabricating large-area, two-dimensional (2D), organic, highly crystalline films and extended it to organic thin-film transistor arrays. Tilted spinning provided oriented flow at the three-phase contact line, and a 2D crystalline film that consisted of layer-by-layer stacked 2,7-diocty[1]benzothieno[3,2- b]benzothiophene (C₈-BTBT) was obtained facilely for organic thin-film transistors (OTFTs). The extracted field-effect mobility is 4.6 cm² V^-1 s^-1, but with nonideal features. By applying this method to microdroplet arrays, an oriented crystal was fabricated, and the channel region for OTFTs was covered by adjusting the spinning speed. By tuning the tilt angle (θ) of the revolving substrate, we fabricated high-performance OTFT arrays with average and maximum mobilities of 7.5 and 10.1 cm² V^-1 s^-1, respectively, which exhibited high reliability factors of over 90% and were close to that of ideal transistors. These results suggest that high-quality crystalline films can be obtained via a facile tilted-spinning method.

New synthetic approaches for hexacene and its application in thin-film transistors

Hexacene was synthesized at the single molecule level and macroscopic scale, respectively. The film mobility of hexacene was observed at 0.123 cm² V⁻¹ s⁻¹.