A High Current Density Direct-Current Generator Based on a Moving van der Waals Schottky Diode

Schottky Diode Leakage Current Fluctuations: Electrostatically Induced Flexoelectricity in Silicon

Nearly four decades have passed since IBM scientists pioneered atomic force microscopy (AFM) by merging the principles of a scanning tunneling microscope with the features of a stylus profilometer. Today, electrical AFM modes are an indispensable asset within the semiconductor and nanotechnology industries, enabling the characterization and manipulation of electrical properties at the nanoscale. However, electrical AFM measurements suffer from reproducibility issues caused, for example, by surface contaminations, Joule heating, and hard-to-minimize tip drift and tilt. Using as experimental system nanoscale Schottky diodes assembled on oxide-free silicon crystals of precisely defined surface chemistry, it is revealed that voltage-dependent adhesion forces lead to significant rotation of the AFM platinum tip. The electrostatics-driven tip rotation causes a strain gradient on the silicon surface, which induces a flexoelectric reverse bias term. This directional flexoelectric internal-bias term adds to the external (instrumental) bias, causing both an increased diode leakage as well as a shift of the diode knee voltage to larger forward biases. These findings will aid the design and characterization of silicon-based devices, especially those that are deliberately operated under large strain or shear, such as in emerging energy harvesting technologies including Schottky-based triboelectric nanogenerators (TENGs).

Ultra-Durable Polysilicon Based Tribovoltaic Nanogenerators for Bearing In Situ Rotational Speed Sensing

Tribovoltaic nanogenerator (TVNG) is an emerging energy device with the advantages of direct current and high power density. At present, many TVNGs are based on single-crystal materials, which are expensive and fragile during structural processing. Here, a polysilicon-based TVNG for bearing in situ rotational speed sensing is developed, which has the same level of performance and lower cost compared to monocrystalline silicon. The defects in polysilicon can provide additional carriers, but the grain boundaries can suppress the transport process of carriers, resulting in almost the same electrical output as single crystals. The oiled sliding mode TVNG has an impressive durability of up to 1 million cycles. The friction coefficient of rolling mode TVNG is as low as 0.14. Based on rolling mode polysilicon TVNG, the tapered roller bearing, thrust ball bearing, and deep groove ball bearing are manufactured by cutting and engraving processes. Moreover, their short-circuit current and open-circuit voltage are linear with speed, and the fitting coefficient is as high as 0.99, providing favorable conditions for in situ rotational speed sensing. This work presents a structure-function integrated bearing design methodology, demonstrating the considerable potential of in situ sensing for intelligent components in the industrial Internet of Things.

Edge-enhanced super microgenerator based on a two-dimensional Schottky junction

Super microgenerator (SMG) refers to a generator that can efficiently convert extremely weak external stimuli into electrical energy and has a small size, high power density and long lifespan, offer ground-breaking solutions for powering wearable devices, wireless distributed sensors and implanted medical equipment. However, the friction and wear between the interfaces of ordinary microgenerator results in an extremely low lifespan. Here, we present a prototype of SMGs based on a 2D-2D (graphite-MoS2) Schottky contact in the state of structural superlubricity (no wear and nearly zero friction between two contacted solid surfaces). What is even more interesting is when the graphite flake is slid from the bulk to the edge of MoS2, the output current will enhance from 31 to 56 A m-2. Through the I-V curve measurement, we found that the conductive channel across the junction can be activated and further enhanced at the edge of MoS2compare to bulk, which provide the explanation for the above-mentioned edge enhancement of power generation. Above results provide the design principles of high-performance SMGs based on 2D-2D Schottky junctions.

Tribovoltaic Effect: Origin, Interface, Characteristic, Mechanism & Application

Tribovoltaic effect is a phenomenon of the generation of direct voltage and current by the mechanical friction on semiconductor interface, which exhibits a brand-new energy conversion mechanism by the coupling of semiconductor and triboelectrification. Here, the origin, interfaces, characteristics, mechanism, coupling effect and application of the tribovoltaic effect is summarized and reviewed. The tribovoltaic effect is first proposed in 2019, which has developed in various forms tribovoltaic nanogenerator (TVNG) including metal-semiconductor, metal-insulator-semiconductor, semiconductor-semiconductor, liquid-solid and flexible interfaces. Compared with triboelectric nanogenerator, the TVNG has the characteristics of direct-current, high current density (mA-A cm-2) and low impedance (Ω-kΩ). The two mainstream views on the tribovoltaic generation mechanism, one dominated by built-in electric fields and the other dominated by interface electric fields, have been elaborated and summarized in detail. The tribo-photovoltaic effect and tribo-thermoelectric effect are also discovered and introduced because they can easily interact with other multi-physical field effects. The TVNGs are suitable for making energy harvesting and self-powered sensing devices for micro-nano energy applications. This paper not only revisit the development of the tribovoltaic effect, but also makes prospects for mechanism research, device fabrication and integrated application, which can accelerate the evolution of smart wearable electronics and intelligent industrial components.

An Ultrahigh Power Density and Ultralow Wear GaN-Based Tribovoltaic Nanogenerator for Sliding Ball Bearing as Self-Powered Wireless Sensor Node

The tribovoltaic effect is regarded as a newly discovered semiconductor effect for mechanical-to-electrical energy conversion. However, tribovoltaic nanogenerators (TVNGs) are widely limited by low output power and poor wear resistance for device integration and application. Here, this work invents a TVNG using a ball-on-disk structure composed of gallium nitride (GaN) and steel ball. It exhibits an open-circuit voltage exceeding 130 V and an ultrahigh normalized average power density of 24.6 kW m-2 Hz-1 , which is a 282-fold improvement compared to previous works. Meanwhile, this TVNG reaches an ultralow wear rate of 5 × 10-7 mm3 N-1 m-1 at a maximum contact pressure of 906.6 MPa, surpassing the TVNG composed of Si by three orders of magnitude due to the local concentrated injection of frictional energy. Based on the TVNG, this work constructs the first tribovoltaic bearing and achieves sensing signal transmission within 16 s (300 rpm) by integrating a management circuit, a transmission module, a relay, and receiving terminals, which enables the monitoring of ambient pressure and temperature. This work realizes a GaN-based TVNG with high-performance and low wear simultaneously, demonstrating great potential for intelligent components and self-powered sensor nodes in the industrial Internet of Things.

Evolution of Thermoelectric Generators: From Application to Hybridization

Considerable thermal energy is emitted into the environment from human activities and equipment operation in the course of daily production. Accordingly, the use of thermoelectric generators (TEGs) can attract wide interest, and it shows high potential in reducing energy waste and increasing energy recovery rates. Notably, TEGs have aroused rising attention and been significantly boosted over the past few years, as the energy crisis has worsened. The reason for their progress is that thermoelectric generators can be easily attached to the surface of a heat source, converting heat energy directly into electricity in a stable and continuous manner. In this review, applications in wearable devices, and everyday life are reviewed according to the type of structure of TEGs. Meanwhile, the latest progress of TEGs' hybridization with triboelectric nanogenerator (TENG), piezoelectric nanogenerator (PENG), and photovoltaic effect is introduced. Moreover, prospects and suggestions for subsequent research work are proposed. This review suggests that hybridization of energy harvesting, and flexible high-temperature thermoelectric generators are the future trends.

Tribovoltaic Performance of TiO2 Thin Films: Crystallinity, Contact Metal, and Thermoelectric Effects

Tribovoltaic devices are attracting increasing attention as motion-based energy harvesters due to the high local current densities that can be generated. However, while these tribovoltaic devices are being developed, debate remains surrounding their fundamental mechanism. Here, we fabricate thin films from one of the world's most common oxides, TiO₂, and compare the tribovoltaic performance under contact with metals of varying work functions, contact areas, and applied pressure. The resultant current density shows little correlation with the work function of the contact metal and a strong correlation with the contact area. Considering other effects at the metal-semiconductor interface, the thermoelectric coefficients of different metals were calculated, which showed a clear correlation with the tribovoltaic current density. On the microscale, molybdenum showed the highest current density of 192 mA cm^-2. This work shows the need to consider a variety of mechanisms to understand the tribovoltaic effect and design future exemplar tribovoltaic devices.

Recent Advances in Triboelectric Nanogenerators: From Technological Progress to Commercial Applications

Serious climate changes and energy-related environmental problems are currently critical issues in the world. In order to reduce carbon emissions and save our environment, renewable energy harvesting technologies will serve as a key solution in the near future. Among them, triboelectric nanogenerators (TENGs), which is one of the most promising mechanical energy harvesters by means of contact electrification phenomenon, are explosively developing due to abundant wasting mechanical energy sources and a number of superior advantages in a wide availability and selection of materials, relatively simple device configurations, and low-cost processing. Significant experimental and theoretical efforts have been achieved toward understanding fundamental behaviors and a wide range of demonstrations since its report in 2012. As a result, considerable technological advancement has been exhibited and it advances the timeline of achievement in the proposed roadmap. Now, the technology has reached the stage of prototype development with verification of performance beyond the lab scale environment toward its commercialization. In this review, distinguished authors in the world worked together to summarize the state of the art in theory, materials, devices, systems, circuits, and applications in TENG fields. The great research achievements of researchers in this field around the world over the past decade are expected to play a major role in coming to fruition of unexpectedly accelerated technological advances over the next decade.

Self-Powered Smart Textile Based on Dynamic Schottky Diode for Human-Machine Interactions

The growing demand for sustained self-powered devices with multifunctional sensing networks is one of the main challenges for smart textiles, which are the critical elements for the future Internet of Things (IoT) and Point of Care (POC). Here, cellulose-based smart textile is integrated with dynamic Schottky diode (DSD) to generate sustained power source (current density of 8.9 mA m⁻2 ) for self-powered built-in sensing network. In response to normal and shear motions, a pressure sensor with a sensitivity of 0.12 KPa⁻1 and an impact sensor are demonstrated, respectively. The woven structure of the textile contributes to signal amplification, which can also form a matrix of sensing elements for distributed sensing. The proposed strategy of fabricating self-powered and multifunctional sensing networks with smart textiles shows tremendous potential for future intelligent society.

Tunable Tribovoltaic Effect via Metal-Insulator Transition

Tribovoltaic direct-current (DC) nanogenerator made of dynamic semiconductor heterojunction is emerging as a promising mechanical energy harvesting technology. However, fundamental understanding of the mechano-electronic carrier excitation and transport at dynamic semiconductor interfaces remains to be investigated. Here, we demonstrated for the first time, that tribovoltaic DC effect can be tuned with metal-insulator transition (MIT). In a representative MIT material (vanadium dioxide, VO₂), we found that the short-circuit current (I_SC) can be enhanced by >20 times when the material is transformed from insulating to metallic state upon static or dynamic heating, while the open-circuit voltage (V_OC) turns out to be unaffected. Such phenomenon may be understood by the Hubbard model for Mott insulator: orders' magnitude increase in conductivity is induced when the nearest hopping changes dramatically and overcomes the Coulomb repulsion, while the Coulomb repulsion giving rise to the quasi-particle excitation energy remains relatively stable.

From Triboelectric Nanogenerator to Multifunctional Triboelectric Sensors: A Chemical Perspective toward the Interface Optimization and Device Integration

Triboelectric nanogenerators (TENGs) have intrigued scientists for their potential to alleviate the energy shortage crisis and facilitate self-powered sensors. Triboelectric interfaces containing triboelectric functionalized molecular groups and tunable surface charge densities are important for improving the electrical output capability of TENGs and the versatility of future electronics. In this review, following an introduction to the fundamental progress of TENG systems for mechanic energy harvesting, surface modifications that aim to increase the surface charge density and functionality are highlighted, with an emphasis on interfacial chemical modification and triboelectric energetics/dynamics optimization for efficient electrostatic induction and charge transfer. Recent advances in assemblies of multifunctional triboelectric sensing are briefly introduced, and future challenges and chemical perspectives in the field of TENG-based electronics are concisely reviewed. This review presents and advances the understanding of the state-of-the-art chemical strategies toward rational triboelectric interface engineering and system assembly and is expected to guide the rational design of highly efficient and versatile triboelectric sensing.

Broadband Insulator-Based Dynamic Diode with Ultrafast Hot Carriers Process

The excitation, rebound, and transport process of hot carriers (HCs) inside dynamic diode (DD) based on insulators has been rarely explored due to the original stereotyped in which it was thought that the insulators are nonconductive. However, the carrier dynamics of DD is totally different from the static diode, which may bring a subverting insight of insulators. Herein, we discovered insulators could be conductive under the framework of DD; the HC process inside the rebounding procedure caused by the disappearance and reestablishment of the built-in electric field at the interface of insulator/semiconductor heterostructure is the main generation mechanism. This type of DD can response fast up to 1 μs to mechanical excitation with an output of ~10 V, showing a wide band frequency response under different input frequencies from 0 to 40 kHz. It can work under extreme environments; various applications like underwater communication network, self-powered sensor/detector in the sea environment, and life health monitoring can be achieved.

Hot Carrier Transport and Carrier Multiplication Induced High Performance Vertical Graphene/Silicon Dynamic Diode Generator

Dynamic semiconductor diode generators (DDGs) offer a potential portable and miniaturized energy source, with the advantages of high current density, low internal impedance, and independence of the rectification circuit. However, the output voltage of DDGs is generally as low as 0.1-1 V, owing to energy loss during carrier transport and inefficient carrier collection, which requires further optimization and a deeper understanding of semiconductor physical properties. Therefore, this study proposes a vertical graphene/silicon DDG to regulate the performance by realizing hot carrier transport and collection. With instant contact and separation of the graphene and silicon, hot carriers are generated by the rebounding process of built-in electric fields in dynamic graphene/silicon diodes, which can be collected within the ultralong hot electron lifetime of graphene. In particular, monolayer graphene/silicon DDG outputs a high voltage of 6.1 V as result of ultrafast carrier transport between the monolayer graphene and silicon. Furthermore, a high current of 235.6 nA is generated due to the carrier multiplication in graphene. A voltage of 17.5 V is achieved under series connection, indicating the potential to supply electronic systems through integration design. The graphene/silicon DDG has applications as an in situ energy source for harvesting mechanical energy from the environment.

Friction-Dominated Carrier Excitation and Transport Mechanism for GaN-Based Direct-Current Triboelectric Nanogenerators

The semiconductor triboelectric nanogenerator (TENG) based on the tribovoltaic effect has the characteristics of direct current and high current density, but the energy transfer and conversion mechanism is not completely clear. Here, a series of gallium nitride (GaN)-based semiconductor direct-current TENGs (SDC-TENGs) are investigated for clarifying the carrier excitation and transport mechanism. During the friction process, the external output current always flows from GaN to silicon or aluminum, regardless of the direction of the built-in electric field, because of the semiconductor types. These results reveal that the carrier transport direction is dominated by the interfacial electric field formed by triboelectrification, which is also verified under different bias voltages. Moreover, the characteristics dependent on the frictional force have been systematically investigated under different normal forces and frictional modes. The open-circuit voltage and short-circuit current of SDC-TENG are both increased with a larger frictional force, which shows that the more severe friction results in both a larger interface electric field and more excited carriers. The maximum voltage can reach 25 V for lighting up a series of LEDs, which is enhanced by four times compared to the cutting-edge reported SDC-TENGs. This work has clarified the friction-dominated carrier excitation and transport mechanism for the tribovoltaic effect, which demonstrates the great potential of semiconductor materials for frictional energy recovery and utilization.

Semiconductor Contact-Electrification-Dominated Tribovoltaic Effect for Ultrahigh Power Generation

The semiconductor direct-current triboelectric nanogenerator (SDC-TENG) based on the tribovoltaic effect is promising for developing a new semiconductor energy technology with high power density. Here, the first SDC-TENG built using gallium nitride (GaN) and bismuth telluride (Bi₂ Te₃ ) for ultrahigh-power generation is reported. During the friction process, an additional interfacial electric field is formed by continuous contact electrification (CE), and abundant electron-hole pairs are excited and move directionally to form a junction current that is always internally from Bi₂ Te₃ to GaN, regardless of the semiconductor type. The peak open-circuit voltage can reach up to 40 V and the power density is 11.85 W m^-2 (average value is 9.23 W m^-2 ), which is approximately 200 times higher than that of previous centimeter-level SDC-TENGs. Moreover, compared to traditional polymer TENGs under the same conditions, the average power density is remarkably improved by over 40 times. This study provides the first evidence of CE on the tribovoltaic effect and sets the normalized power density record for TENGs, which demonstrates a great potential of the tribovoltaic effect for energy harvesting and sensing.

Mechanism of In-Plane and Out-of-Plane Tribovoltaic Direct-Current Transport with a Metal/Oxide/Metal Dynamic Heterojunction

Interfacial layer engineering has been demonstrated as an effective strategy for boosting power output in semiconductor-based dynamic direct-current (DC) generators, although the underlying mechanism of power enhancement remains obscure. Here, such ambiguity has been elucidated by comparing fundamental tribovoltaic DC output characteristics of prototypical metal-oxide-metal heterojunctions prepared by atomic-layer deposition (ALD) with a vertical (out-of-plane carrier transport through the interfacial layer) and a horizontal (in-plane carrier transport along the interfacial layer) configuration such that the influences from nonequilibrium electronic excitation and interfacial capacitive amplification can be individually tuned and investigated. It is found in the case of Al/TiO₂/Ti vertical configurations that the open-circuit voltage (V_OC) increases linearly from -0.03 to -0.52 V as the thickness of titanium oxide (t_TiO2) increases from 0 to 200 nm with a linear amplification coefficient of -2.31 mV nm^-1, which is validated by a parallel-capacitor theoretical model with tribovoltaic electronic excitation. In contrast, the V_OC output with the horizontal configuration is ∼55 mV, where the potential difference is merely associated with the accumulation of surface charges and the subsequent charge rearrangement in the depletion region. Meanwhile, it is measured that the short-circuit current density (J_SC) shows an initial increasing trend when t_TiO2 increases, reaches its peak value at 0.21 A m^-2 at t_TiO2 = 20 nm, and then decreases as t_TiO2 increases further. From current-voltage (I-V) characterization, it is proposed that such DC output variation with an optimal interfacial layer thickness stems from the competition of amplified voltage and increased resistance with increasing interfacial layer thickness, with the main charge transport mechanism switching from quantum tunneling to thermionic emission/trap-assisted transport. In contrast, tribovoltaic excitation is proven to be significantly weaker when a wide band-gap insulator (Al₂O₃) is involved. The elucidation of the fundamental mechanism of power enhancement by the interfacial layer in this work is of great significance in providing instructional direction for the development and optimization of high-performance DC nanogenerators.

Plasmonic and Graphene-Functionalized High-Performance Broadband Quasi-Two-Dimensional Perovskite Hybrid Photodetectors

Quasi-two-dimensional (2D) layered organic-inorganic hybrid perovskites have attracted extensive attention, owing to their excellent optoelectronic tunability and moisture stability compared with three-dimensional perovskite counterparts and show great potential for application in photodetectors (PDs). However, owing to the unavoidable grain boundary defects of perovskite polycrystalline films, the photocurrent is limited by poor light absorption and charge mobility. Therefore, the preparation of quasi-2D perovskite films with strong light trapping and high charge mobility has been challenging. In this study, novel broadband quasi-2D perovskite (BA)₂(FA)_n-1Pb_nI_3n+1 hybrid-structure PDs with good stability were fabricated by combining both monolayer graphene and Au square nanoarrays. The hybrid system using both graphene and Au square nanoarrays effectively improved the carrier mobility and light absorption and simultaneously maximized light trapping and light-induced carrier extraction, which resulted in PDs with greatly enhanced photocurrent in the visible and near-infrared range. The graphene-Au array-perovskite-based PDs had a low dark current of 10^-10 A, large on/off ratio of 10⁴, high responsivity of 18.71 A W^-1, and detectivity of 2.21 × 10¹³ Jones. The responsivity and detectivity were two orders of magnitude higher than those of PDs based only on perovskites. This work demonstrates a promising and feasible device based on the coupling of a gold array, layered graphene, and quasi-2D perovskites, which shows great potential for the development of high-performance broadband perovskite PDs.

p-n Junction Based Direct-Current Triboelectric Nanogenerator by Conjunction of Tribovoltaic Effect and Photovoltaic Effect

Triboelectric nanogenerators (TENGs) have attracted much interest in recent years, due to its effectiveness and low cost for converting high-entropy mechanical energy into electric power. The traditional TENGs generate an alternating current, which requires a rectifier to provide a direct-current (DC) power supply. Herein, a dynamic p-n junction based direct-current triboelectric nanogenerator (DTENG) is demonstrated. When a p-Si wafer is sliding on a n-GaN wafer, carriers are generated at the interface and a DC current is produced along the direction of the built-in electric field, which is called the tribovoltatic effect. Simultaneously, an UV light is illuminated on the p-n junction to enhance the output. The results indicate that the current increases 13 times and the voltage increases 4 times under UV light (365 nm, 28 mW/cm²) irradiation. This work demonstrates the coupling between the tribovoltaic effect and the photovoltaic effect in DTENG semiconductors, promoting further development for energy harvesting in mechanical energy and photon energy.

Direct-current generators based on conductive polymers for self-powered flexible devices

Direct-current generators, especially those based on the Schottky contacts between conductive polymers and metal electrodes, are efficient in converting mechanical stimuli into electrical energy. In contrast to triboelectric and piezoelectric generators, direct-current generators readily produce direct-current outputs and high currents that are crucial for integrating multiple energy-harvesting units in large scale and driving some types of devices. We are focusing on the relationship between Schottky barrier height and performance, systematically investigating the effects of various conductive polymers and electrodes on the outputs by both theoretical simulation and experiments. Tailoring the Schottky barrier height between conductive polymers and metal electrodes is demonstrated a significant approach to design the new DC generators. The preparation method of electrochemical deposition endows the generators flexibility, the linear relationship of current/voltage output vs. strain applied on the generators, combined with the large outputs offer advantages for the generator to work as flexible sensors. Furthermore, a mechanosensation-active matrix array based on direct-current generator for the strain monitoring demonstrated its promising prospects in flexible electronics. The direct-current generators with improved performance could serve as a stream new blood for versatile sensory systems and human-machine interactive interfaces.

From contact electrification to triboelectric nanogenerators

Although the contact electrification (CE) (or usually called 'triboelectrification') effect has been known for over 2600 years, its scientific mechanism still remains debated after decades. Interest in studying CE has been recently revisited due to the invention of triboelectric nanogenerators (TENGs), which are the most effective approach for converting random, low-frequency mechanical energy (called high entropy energy) into electric power for distributed energy applications. This review is composed of three parts that are coherently linked, ranging from basic physics, through classical electrodynamics, to technological advances and engineering applications. First, the mechanisms of CE are studied for general cases involving solids, liquids and gas phases. Various physics models are presented to explain the fundamentals of CE by illustrating that electron transfer is the dominant mechanism for CE for solid-solid interfaces. Electron transfer also occurs in the CE at liquid-solid and liquid-liquid interfaces. An electron-cloud overlap model is proposed to explain CE in general. This electron transfer model is extended to liquid-solid interfaces, leading to a revision of the formation mechanism of the electric double layer at liquid-solid interfaces. Second, by adding a time-dependent polarization termPscreated by the CE-induced surface electrostatic charges in the displacement fieldD, we expand Maxwell's equations to include both the medium polarizations due to electric field (P) and mechanical aggitation and medium boundary movement induced polarization term (Ps). From these, the output power, electromagnetic (EM) behaviour and current transport equation for a TENG are systematically derived from first principles. A general solution is presented for the modified Maxwell's equations, and analytical solutions for the output potential are provided for a few cases. The displacement current arising fromε∂E/∂t is responsible for EM waves, while the newly added term ∂Ps/∂t is responsible for energy and sensors. This work sets the standard theory for quantifying the performance and EM behaviour of TENGs in general. Finally, we review the applications of TENGs for harvesting all kinds of available mechanical energy that is wasted in our daily life, such as human motion, walking, vibration, mechanical triggering, rotating tires, wind, flowing water and more. A summary is provided about the applications of TENGs in energy science, environmental protection, wearable electronics, self-powered sensors, medical science, robotics and artificial intelligence.

Persistent electrical energy generation from organic diodes under constant pressure: toward organic gravity nanogenerators

Here it is demonstrated that electricity can be continuously generated by pressing organic diodes with the poly(3-hexylthiophene) (P3HT) layers which are sandwiched between indium-tin oxide and aluminum (Al) electrodes. The optimized single devices with the 150-nm-thick P3HT layers are able to generate 60 μV and 45 μA by pressing, while persistent voltage (50 μV) and current (45 μA) generations are achieved by continuous pressing for 7 days. The charge generation by pressing of organic diodes is supported by the current density-voltage and capacitance measurements, while the friction of pi-orbital electrons in the P3HT chains upon pressing is proposed for the mechanism of persistent electricity generation. Organic diode modules with 14 sub-cells in series deliver ca. 0.4 V and ca. 20 μW. The present technology is expected to pave the way for next-generation energy conversion devices, organic gravity nanogenerators that enable continuous electricity generation by gravitational forces.

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Organic diodes with the P3HT layers can generate electricity upon compression of devices.

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The 150-nm-thick P3HT layers deliver the best voltage and current output signals.

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The optimized devices show continuous electricity generation upon pressing for 7 days.

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0.4 V Is achieved from the organic diode modules with 14 sub-cells in series connection.

Effect of the External Velocity on the Exfoliation Properties of Graphene from Amorphous SiO2 Surface

External action has a significant influence on the formation of high-quality graphene and the adhesion of graphene on the surface of the MEMS/NEMS device. The atomic-scale simulation and calculation can further study the exfoliation process of graphene by external actions. In multilayer graphene systems where graphene layers were simulated weakly contacted with SiO2 substrate, a constant vertical upward velocity (Vup) was applied to the topmost layer. Then two critical velocities were found, and three kinds of distinct exfoliation processes determined by critical upward velocities were observed in multilayer graphene systems. The first critical velocities are in the range of 0.5 Å/ps–3.18 Å/ps, and the second critical velocities are in the range of 9.5 Å/ps–12.1 Å/ps. When the Vup is less than the first critical velocity, all graphene layers will not be exfoliated. When Vup is between the first and second critical Vup, all layers can be exfoliated almost synchronously at last. When Vup is larger than the second critical Vup, the topmost layer can be exfoliated alone, transferring energy to the underlying layers, and the underlying layers are slowly exfoliated. The maximum exfoliation force to exfoliate the topmost layer of graphene is 3200 times larger than that of all graphene layers. Moreover, it is required 149.26 mJ/m2 to get monolayer graphene from multilayers, while peeling off all layers without effort. This study explains the difficulty to get monolayer graphene and why graphene falls off easily during the transfer process.

Microscale Schottky superlubric generator with high direct-current density and ultralong life

Miniaturized or microscale generators that can effectively convert weak and random mechanical energy into electricity have significant potential to provide solutions for the power supply problem of distributed devices. However, owing to the common occurrence of friction and wear, all such generators developed so far have failed to simultaneously achieve sufficiently high current density and sufficiently long lifetime, which are crucial for real-world applications. To address this issue, we invent a microscale Schottky superlubric generator (S-SLG), such that the sliding contact between microsized graphite flakes and n-type silicon is in a structural superlubric state (an ultra-low friction and wearless state). The S-SLG not only generates high current (~210 Am-2) and power (~7 Wm-2) densities, but also achieves a long lifetime of at least 5,000 cycles, while maintaining stable high electrical current density (~119 Am-2). No current decay and wear are observed during the experiment, indicating that the actual persistence of the S-SLG is enduring or virtually unlimited. By excluding the mechanism of friction-induced excitation in the S-SLG, we further demonstrate an electronic drift process during relative sliding using a quasi-static semiconductor finite element simulation. Our work may guide and accelerate the future use of S-SLGs in real-world applications.

Manipulating Electrical Properties of Silica-Based Materials via Atomic Oxygen Irradiation

Regulated triboelectrification has attracted considerable research attention due to its potential applications in harvesting energy and importance in antistatic protection. Irradiation is an effective and stable modification method due to its adjustable and uniform irradiation parameters. Moreover, atomic oxygen (AO) irradiation is an important component in the low earth orbit, which is a considerable factor for promoting triboelectric nanogenerators (TENGs) in the outer space. AO irradiation was utilized to manipulate the surface structure and chemical composition to regulate electrical properties. AO irradiation can increase electron-donating groups and enhance electrical positivity of polydimethylsiloxane (PDMS) films due to the transition from Si-C bonds to Si-O bonds. Therefore, different trends of polytetrafluoroethylene (PTFE) and polystyrene (PS) were caused by their TENG composition with irradiated PDMS. Tribocharge cross-over polarity and charge generation were prevented completely in PS- and PDMS-based TENGs by adjusting the irradiation time to 4.1 h. Short-circuit current enhanced from 5 to 22 μA and the output voltage increased from 160 to 760 V when PDMS films in PTFE- and PDMS-based TENGs were subjected to AO irradiation for 6 h. This study demonstrated that AO irradiation can manipulate triboelectric properties of silica-based materials, which are potential components for harvesting energy and preventing electrostatic hazard in the outer space.

Triboelectric nanogenerator: from alternating current to direct current

Triboelectric nanogenerator (TENG) is considered as a potential solution to harvest distributed energy for the sustainable and reliable power supply of the internet of things. Although numerous researches on alternating current (AC) output TENG from fundamental physics to potential applications have been widely promoted in recent years, the studies about direct current (DC) output TENG is just beginning, especially for a constant current output. This work gives the summary of recent key researches from AC-TENG to DC-TENG, especially a constant current TENG, as well as the design of AC/DC-TENG. In addition, some new DC generators will also be summarized toward a wide range of readers. This study presents the similarities and differences between AC-TENG and DC-TENG, so that their impact and uniqueness can be clearly understood. Finally, the major challenges and the future outlooks in this rapidly emerging research field will be discussed as a guideline for future research.

Polarized Water Driven Dynamic PN Junction-Based Direct-Current Generator

There is a rising prospective in harvesting energy from the environment, as in situ energy is required for the distributed sensors in the interconnected information society, among which the water flow energy is the most potential candidate as a clean and abundant mechanical source. However, for microscale and unordered movement of water, achieving a sustainable direct-current generating device with high output to drive the load element is still challenging, which requires for further exploration. Herein, we propose a dynamic PN water junction generator with moving water sandwiched between two semiconductors, which outputs a sustainable direct-current voltage of 0.3 V and a current of 0.64 μA. The mechanism can be attributed to the dynamic polarization process of water as moving dielectric medium in the dynamic PN water junction, under the Fermi level difference of two semiconductors. We further demonstrate an encapsulated portable power-generating device with simple structure and continuous direct-current voltage output of 0.11 V, which exhibits its promising potential application in the field of wearable devices and the IoTs.

Scanning Probing of the Tribovoltaic Effect at the Sliding Interface of Two Semiconductors

Contact electrification (CE or triboelectrification) is a common phenomenon, which can occur for almost all types of materials. In previous studies, the CE between insulators and metals has been widely discussed, while CE involving semiconductors is only recently. Here, a tribo-current is generated by sliding an N-type diamond coated tip on a P-type or N-type Si wafers. The density of surface states of the Si wafer is changed by introducing different densities of doping. It is found that the tribo-current between two sliding semiconductors increases with increasing density of surface states of the semiconductor and the sliding load. The results suggest that the tribo-current is induced by the tribovoltaic effect, in which the electron-hole pairs at the sliding interface are excited by the energy release during friction, which may be due to the transition of electrons between the surface states during contact, or bond formation across the sliding interface. The electron-hole pairs at the sliding interface are subsequently separated by the built-in electric field at the PN or NN heterojunctions, which results in a tribo-current, in analogy to that which occurs in the photovoltaic effect.

Interfacial Built-In Electric Field-Driven Direct Current Generator Based on Dynamic Silicon Homojunction

Searching for light and miniaturized functional device structures for sustainable energy gathering from the environment is the focus of energy society with the development of the internet of things. The proposal of a dynamic heterojunction-based direct current generator builds up new platforms for developing in situ energy. However, the requirement of different semiconductors in dynamic heterojunction is too complex to wide applications, generating energy loss for crystal structure mismatch. Herein, dynamic homojunction generators are explored, with the same semiconductor and majority carrier type. Systematic experiments reveal that the majority of carrier directional separation originates from the breaking symmetry between carrier distribution, leading to the rebounding effect of carriers by the interfacial electric field. Strikingly, NN Si homojunction with different Fermi levels can also output the electricity with higher current density than PP/PN homojunction, attributing to higher carrier mobility. The current density is as high as 214.0 A/m², and internal impedance is as low as 3.6 kΩ, matching well with the impedance of electron components. Furthermore, the N-i-N structure is explored, whose output voltage can be further improved to 1.3 V in the case of the N-Si/Al₂O₃/N-Si structure, attributing to the enhanced interfacial barrier. This approach provides a simple and feasible way of converting low-frequency disordered mechanical motion into electricity.

Surface States Enhanced Dynamic Schottky Diode Generator with Extremely High Power Density Over 1000 W m-2

The overloaded energy cost has become the main concern of the now fast developing society, which make novel energy devices with high power density of critical importance to the sustainable development of human society. Herein, a dynamic Schottky diode based generator with ultrahigh power density of 1262.0 W m-2 for sliding Fe tip on rough p-type silicon is reported. Intriguingly, the increased surface states after rough treatment lead to an extremely enhanced current density up to 2.7 × 105 A m-2, as the charged surface states can effectively accelerate the carriers through large atomic electric field, while the reflecting directions are regulated by the built-in electric field of the Schottky barrier. This research provides an open avenue for utilizing the surface states in semiconductors in a subversive way, which can co-utilize the atomic electric field and built-in electric field to harvest energy from the mechanical movements, especially for achieving an ultrahigh current density power source.

Tunable Dynamic Black Phosphorus/Insulator/Si Heterojunction Direct-Current Generator Based on the Hot Electron Transport

Static heterojunction-based electronic devices have been widely applied because carrier dynamic processes between semiconductors can be designed through band gap engineering. Herein, we demonstrate a tunable direct-current generator based on the dynamic heterojunction, whose mechanism is based on breaking the symmetry of drift and diffusion currents and rebounding hot carrier transport in dynamic heterojunctions. Furthermore, the output voltage can be delicately adjusted and enhanced with the interface energy level engineering of inserting dielectric layers. Under the ultrahigh interface electric field, hot electrons will still transfer across the interface through the tunneling and hopping effect. In particular, the intrinsic anisotropy of black phosphorus arising from the lattice structure produces extraordinary electronic, transport, and mechanical properties exploited in our dynamic heterojunction generator. Herein, the voltage of 6.1 V, current density of 124.0 A/m², power density of 201.0 W/m², and energy-conversion efficiency of 31.4% have been achieved based on the dynamic black phosphorus/AlN/Si heterojunction, which can be used to directly and synchronously light up light-emitting diodes. This direct-current generator has the potential to convert ubiquitous mechanical energy into electric energy and is a promising candidate for novel portable and miniaturized power sources in the in situ energy acquisition field.

Direct-Current Generator Based on Dynamic PN Junctions with the Designed Voltage Output

The static PN junction is the foundation of integrated circuits. Herein, we pioneer a high current density generation by mechanically moving N-type semiconductor over P-type semiconductor, named as the dynamic PN junction. The establishment and destruction of the depletion layer causes the redistribution and rebounding of diffusing carriers by the built-in field, similar to a capacitive charge/discharge process of PN junction capacitance during the movement. Through inserting dielectric layer at the interface of the dynamic PN junction, output voltage can be improved and designed numerically according to the energy level difference between the valence band of semiconductor and conduction band of dielectric layer. Especially, the dynamic MoS₂/AlN/Si generator with open-circuit voltage of 5.1 V, short-circuit current density of 112.0 A/m², power density of 130.0 W/m², and power-conversion efficiency of 32.5% has been achieved, which can light up light-emitting diode timely and directly. This generator can continuously work for 1 h, demonstrating its great potential applications.

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High current density direct-current generator based on dynamic PN junctions

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Dynamic equilibrium between establishment and destruction of the depletion layer

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Capacitive discharge of PN junction capacitance caused by hot carriers rebounding

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Enhance and design voltage numerically by inserting dielectric layer at the interface

Scaled-up Direct-Current Generation in MoS2 Multilayer-Based Moving Heterojunctions

Techniques for scaling-up the direct-current (dc) triboelectricity generation in MoS₂ multilayer-based Schottky nanocontacts are vital for exploiting the nanoscale phenomenon for real-world applications of energy harvesting and sensing. Here, we show that scaling-up the dc output can be realized by using various MoS₂ multilayer-based heterojunctions including metal/semiconductor (MS), metal/insulator (tens of nanometers)/semiconductor (MIS), and semiconductor/insulator (a few nanometers)/semiconductor (SIS) moving structures. It is shown that the tribo-excited energetic charge carriers can overcome the interfacial potential barrier by different mechanisms, such as thermionic emission, defect conduction, and quantum tunneling in the case of MS, MIS, and SIS moving structures. By tailoring the interface structure, it is possible to trigger electrical conduction resulting in optimized power output. We also show that the band bending in the surface-charged region of MoS₂ determines the direction of the dc power output. Our experimental results show that engineering the interface structure opens up new avenues for developing next-generation semiconductor-based mechanical energy conversion with high performance.