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Zhou N, Dang Z, Li H, Sun Z, Deng S, Li J, Li X, Bai X, Xie Y, Li L, Zhai T. Low-Symmetry 2D t-InTe for Polarization-Sensitive UV-Vis-NIR Photodetection. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2400311. [PMID: 38804863 DOI: 10.1002/smll.202400311] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/13/2024] [Revised: 03/23/2024] [Indexed: 05/29/2024]
Abstract
Polarization-sensitive photodetection grounded on low-symmetry 2D materials has immense potential in improving detection accuracy, realizing intelligent detection, and enabling multidimensional visual perception, which has promising application prospects in bio-identification, optical communications, near-infrared imaging, radar, military, and security. However, the majority of the reported polarized photodetection are limited by UV-vis response range and low anisotropic photoresponsivity factor, limiting the achievement of high-performance anisotropic photodetection. Herein, 2D t-InTe crystal is introduced into anisotropic systems and developed to realize broadband-response and high-anisotropy-ratio polarized photodetection. Stemming from its narrow band gap and intrinsic low-symmetry lattice characteristic, 2D t-InTe-based photodetector exhibits a UV-vis-NIR broadband photoresponse and significant photoresponsivity anisotropy behavior, with an exceptional in-plane anisotropic factor of 1.81@808 nm laser, surpassing the performance of most reported 2D counterparts. This work expounds the anisotropic structure-activity relationship of 2D t-InTe crystal, and identifies 2D t-InTe as a prospective candidate for high-performance polarization-sensitive optoelectronics, laying the foundation for future multifunctional device applications.
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Affiliation(s)
- Nan Zhou
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
- Guangzhou Institute of Technology, Xidian University, Guangzhou, 710068, P. R. China
| | - Ziwei Dang
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
| | - Haoran Li
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
| | - Zongdong Sun
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Shijie Deng
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
| | - Junhao Li
- Institute of Information Sensing, Xidian University, Xi'an, 710126, P. R. China
| | - Xiaobo Li
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
- Guangzhou Institute of Technology, Xidian University, Guangzhou, 710068, P. R. China
| | - Xiaoxia Bai
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
| | - Yong Xie
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
| | - Liang Li
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
- Optics Valley Laboratory, Hubei, 430074, P. R. China
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Yang Y, Liu J, Zhao C, Liang Q, Dong W, Shi J, Wang P, Kong D, Lv L, Jia L, Wang D, Huang C, Zheng S, Wang M, Liu F, Yu P, Qiao J, Ji W, Zhou J. A Universal Strategy for Synthesis of 2D Ternary Transition Metal Phosphorous Chalcogenides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307237. [PMID: 37776266 DOI: 10.1002/adma.202307237] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/21/2023] [Revised: 09/26/2023] [Indexed: 10/02/2023]
Abstract
The 2D ternary transition metal phosphorous chalcogenides (TMPCs) have attracted extensive research interest due to their widely tunable band gap, rich electronic properties, inherent magnetic and ferroelectric properties. However, the synthesis of TMPCs via chemical vapor deposition (CVD) is still challenging since it is difficult to control reactions among multi-precursors. Here, a subtractive element growth mechanism is proposed to controllably synthesize the TMPCs. Based on the growth mechanism, the TMPCs including FePS3 , FePSe3 , MnPS3 , MnPSe3 , CdPS3 , CdPSe3 , In2 P3 S9 , and SnPS3 are achieved successfully and further confirmed by Raman, second-harmonic generation (SHG), and scanning transmission electron microscopy (STEM). The typical TMPCs-SnPS3 shows a strong SHG signal at 1064 nm, with an effective nonlinear susceptibility χ(2) of 8.41 × 10-11 m V-1 , which is about 8 times of that in MoS2 . And the photodetector based on CdPSe3 exhibits superior detection performances with responsivity of 582 mA W-1 , high detectivity of 3.19 × 1011 Jones, and fast rise time of 611 µs, which is better than most previously reported TMPCs-based photodetectors. These results demonstrate the high quality of TMPCs and promote the exploration of the optical properties of 2D TMPCs for their applications in optoelectronics.
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Affiliation(s)
- Yang Yang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 10081, China
| | - Jijian Liu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 10081, China
| | - Chunyu Zhao
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 10081, China
| | - Qingrong Liang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 10081, China
| | - Weikang Dong
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 10081, China
| | - Jia Shi
- Institute of Information Photonics Technology and School of Physics and Optoelectronics, Faculty of Science, Beijing University of Technology, Beijing, 100124, China
| | - Ping Wang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 10081, China
| | - Denan Kong
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 10081, China
| | - Lu Lv
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 10081, China
| | - Lin Jia
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 10081, China
| | - Dainan Wang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 10081, China
| | - Chun Huang
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, 10081, China
| | - Shoujun Zheng
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 10081, China
| | - Meiling Wang
- School of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan, 030002, China
| | - Fucai Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, China
| | - Peng Yu
- School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, China
| | - Jingsi Qiao
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, 10081, China
| | - Wei Ji
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing, 100872, China
| | - Jiadong Zhou
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 10081, China
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, 10081, China
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3
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Li L, Zhang Q, Li H, Geng D. Liquid metal catalyzed chemical vapor deposition towards morphology engineering of 2D epitaxial heterostructures. Chem Commun (Camb) 2023. [PMID: 37991755 DOI: 10.1039/d3cc04914k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/23/2023]
Abstract
The past decades have witnessed significant advancements in the growth of two-dimensional (2D) materials, offering a wide range of potential applications in the fields of electronics, optoelectronics, energy storage, sensors, catalysis, and biomedical treatments. Epitaxial heterostructures based on 2D materials, including vertical heterostructures, lateral structures, and superlattices, have emerged as novel material systems to manipulate the intrinsic properties and unlock new functionalities. Therefore, the development of controllable preparation methods for tailored epitaxial heterostructures serves as a fundamental basis for extensive property investigation and further application exploration. However, this pursuit presents formidable challenges due to the incomplete understanding of growth mechanisms and limited designable strategies. Chemical vapor deposition (CVD) is deemed as a promising and versatile platform for the controlled synthesis of 2D materials, especially with regard to achieving lattice matching, a critical factor in epitaxial growth. Consequently, CVD holds potential to overcome these hurdles. In this Feature Article, we present our recent breakthroughs in the controllable preparation of 2D epitaxial heterostructures using CVD. Our focus revolves around the processes of morphology engineering, interface engineering, size and density engineering, and striking the delicate balance between growth and etching. Using molten metals or alloys as primary catalysts, we have achieved remarkable control over the fabrication of graphene/hexagonal boron nitride (hBN) super-ordered arrays, enabled multistage etching of graphene/hBN heterostructures, and successfully realized the construction of graphene/MXene heterostructures. Furthermore, our research endeavors encompass both bottom-up and top-down fabrication methods, offering a novel perspective on the synthesis of 2D epitaxial heterostructures. The resulting products hold immense potential for enhancing the efficiency of critical reactions such as oxygen reduction, CO2 reduction, and hydrogen evolution reactions. By presenting our methodologies for obtaining 2D epitaxial heterostructures through CVD, we aspire to inspire fellow researchers in this field to devise more feasible and controllable fabrication techniques while also fostering the exploration of diverse heterostructure configurations. Together, these advancements will undoubtedly pave the way for further breakthroughs in atomic manufacturing and novel applications.
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Affiliation(s)
- Lin Li
- College of Chemistry, Tianjin Normal University, Tianjin 300387, China
| | - Qing Zhang
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou 350207, China
| | - Hang Li
- CAS Key Laboratory of Separation Science for Analytical Chemistry, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023, China
| | - Dechao Geng
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin 300192, China
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Yu M, Zhang F, Gao W, Shen H, Kang L, Ju L, Yin H. Two-dimensional InTeClO 3: an ultrawide-bandgap material with potential application in a deep ultraviolet photodetector. Phys Chem Chem Phys 2023; 25:29241-29248. [PMID: 37874031 DOI: 10.1039/d3cp03612j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/25/2023]
Abstract
Ultrawide-bandgap semiconductors, possessing bandgaps distinctly larger than the 3.4 eV of GaN, have emerged as a promising class capable of achieving deep ultraviolet (UV) light detection. Based on first-principles calculations, we propose an unexplored two-dimensional (2D) InTeClO3 layered system with ultrawide bandgaps ranging from 4.34 eV of bulk to 4.54 eV of monolayer. Our calculations demonstrate that 2D InTeClO3 monolayer can be exfoliated from its bulk counterpart and maintain good thermal and dynamic stability at room temperature. The ultrawide bandgaps may be modulated by the small in-plane strains and layer thickness in a certain range. Furthermore, the 2D InTeClO3 monolayer shows promising electron transport behavior and strong optical absorption capacity in the deep UV range. A two-probe InTeClO3-based photodetection device has been constructed for evaluating the photocurrent. Remarkably, the effective photocurrent (5.7 A m-2 at photon energy of 4.2 eV) generation under polarized light has been observed in such a photodetector. Our results indicate that 2D InTeClO3 systems have strong photoresponse capacity in the deep UV region, accompanying the remarkable polarization sensitivity and high extinction ratio. These distinctive characteristics highlight the promising application prospects of InTeClO3 materials in the field of deep UV optoelectronics.
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Affiliation(s)
- Meiyang Yu
- Joint Center for Theoretical Physics, Institute for Computational Materials Science, and International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China.
| | - Fumin Zhang
- Joint Center for Theoretical Physics, Institute for Computational Materials Science, and International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China.
| | - Wenjiang Gao
- Joint Center for Theoretical Physics, Institute for Computational Materials Science, and International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China.
| | - Huimin Shen
- Joint Center for Theoretical Physics, Institute for Computational Materials Science, and International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China.
| | - Lili Kang
- Joint Center for Theoretical Physics, Institute for Computational Materials Science, and International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China.
| | - Lin Ju
- School of Physics and Electric Engineering, Anyang Normal University, Anyang 455000, China.
| | - Huabing Yin
- Joint Center for Theoretical Physics, Institute for Computational Materials Science, and International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China.
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5
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Wang Z, Wei L, Wang S, Wu T, Sun L, Ma C, Tao X, Wang S. 2D SiP 2/h-BN for a Gate-Controlled Phototransistor with Ultrahigh Sensitivity. ACS APPLIED MATERIALS & INTERFACES 2023; 15:15810-15818. [PMID: 36939047 DOI: 10.1021/acsami.2c19803] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Two-dimensional (2D) materials are extremely attractive for the construction of highly sensitive photodetectors due to their unique electronic and optical properties. However, developing 2D photodetectors with ultrahigh sensitivity for extremely low-light-level detection is still a challenge owing to the limitation of high dark current and low detectivity. Herein, a gate-controlled phototransistor based on 2D SiP2/hexagonal boron nitride (h-BN) was rationally designed and demonstrated ultrahigh sensitivity for the first time. With a back-gate device geometry, the SiP2/h-BN phototransistor exhibits an ultrahigh detectivity of 3.4 × 1013 Jones, which is one of the highest values among 2D material-based photodetectors. In addition, the phototransistor also shows a gate tunable responsivity of ≤43.5 A/W at a gate voltage of 30 V due to the photogating effect. The ultrahigh sensitivity of the SiP2-based phototransistor is attributed to the extremely low dark current suppressed by the phototransistor configuration and the improved photocurrent by using h-BN as a substrate to reduce charge scattering. This work provides a facile strategy for improving the detectivity of photodetectors and validates the great potential of 2D SiP2 phototransistors for ultrasensitive optoelectronic applications.
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Affiliation(s)
- Ziming Wang
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, P. R. China
| | - Limei Wei
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, P. R. China
| | - Shilei Wang
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, P. R. China
| | - Tiange Wu
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, P. R. China
| | - Lanjing Sun
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, P. R. China
| | - Chao Ma
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, P. R. China
| | - Xutang Tao
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, P. R. China
| | - Shanpeng Wang
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan 250100, P. R. China
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6
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Yan Y, Li J, Li S, Wang M, Luo G, Song X, Zhang S, Jiang Y, Qin R, Xia C. Two-dimensional wide-bandgap GeSe 2 vertical ultraviolet photodetectors with high responsivity and ultrafast response speed. NANOSCALE ADVANCES 2022; 4:5297-5303. [PMID: 36540128 PMCID: PMC9724610 DOI: 10.1039/d2na00565d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/23/2022] [Accepted: 09/30/2022] [Indexed: 06/17/2023]
Abstract
Germanium selenide (GeSe2), as a typical member of 2D wide bandgap semiconductors (WBSs), shows great potential in ultraviolet (UV) optoelectronics due to its excellent flexibility, superior environmental stability, competitive UV absorption coefficient, and significant spectral selectivity. However, the GeSe2-based UV photodetector suffers from high operation voltages and low photocurrent, which prevents its practical imaging applications. In this work, we report an elevated photocurrent generation in a vertical stacking graphene/GeSe2/graphene heterostructure with low operation voltage and low power consumption. Efficient collection of photoexcited carriers in GeSe2 through graphene electrodes results in outstanding UV detection properties, including a pronounced responsivity of 37.1 A W-1, a specific detectivity of 8.83 × 1011 Jones, and an ultrahigh on/off ratio (∼105) at 355 nm. In addition, building a Schottky barrier between GeSe2 and graphene and reducing the channel length can increase the photoresponse speed to ∼300 μs. These accomplishments set the stage for future optoelectronic applications of vertical 2D WBS heterostructure UV photodetectors.
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Affiliation(s)
- Yong Yan
- School of Physics, Henan Normal University Xinxiang Henan province China
| | - Jie Li
- School of Physics, Henan Normal University Xinxiang Henan province China
| | - Shasha Li
- School of Physics, Henan Normal University Xinxiang Henan province China
| | - Mengna Wang
- School of Physics, Henan Normal University Xinxiang Henan province China
| | - Gaoli Luo
- School of Physics, Henan Normal University Xinxiang Henan province China
| | - Xiaohui Song
- School of Physics, Henan Normal University Xinxiang Henan province China
| | - Suicai Zhang
- School of Physics, Henan Normal University Xinxiang Henan province China
| | - Yurong Jiang
- School of Physics, Henan Normal University Xinxiang Henan province China
| | - Ruiping Qin
- School of Physics, Henan Normal University Xinxiang Henan province China
| | - Congxin Xia
- School of Physics, Henan Normal University Xinxiang Henan province China
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7
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Wang R, Wang F, Zhang X, Feng X, Zhao C, Bu K, Zhang Z, Zhai T, Huang F. Improved Polarization in the Sr
6
Cd
2
Sb
6
O
7
Se
10
Oxyselenide through Design of Lateral Sublattices for Efficient Photoelectric Conversion. Angew Chem Int Ed Engl 2022; 61:e202206816. [DOI: 10.1002/anie.202206816] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/09/2022] [Indexed: 12/26/2022]
Affiliation(s)
- Ruiqi Wang
- Beijing National Laboratory for Molecular Sciences State Key Laboratory of Rare Earth Materials Chemistry and Applications College of Chemistry and Molecular Engineering Peking University Beijing 100871 P. R. China
| | - Fakun Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology School of Materials Science and Engineering Huazhong University of Science and Technology (HUST) Wuhan 430074 P. R. China
| | - Xian Zhang
- Qian Xuesen Laboratory of Space Technology China Academy of Space Technology Beijing 100094 P. R. China
| | - Xin Feng
- State Key Laboratory of Materials Processing and Die & Mould Technology School of Materials Science and Engineering Huazhong University of Science and Technology (HUST) Wuhan 430074 P. R. China
| | - Chendong Zhao
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai 200050 P. R. China
| | - Kejun Bu
- Center for High Pressure Science and Technology Advanced Research (HPSTAR) Shanghai 201203 P. R. China
| | - Zhuang Zhang
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai 200050 P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology School of Materials Science and Engineering Huazhong University of Science and Technology (HUST) Wuhan 430074 P. R. China
| | - Fuqiang Huang
- Beijing National Laboratory for Molecular Sciences State Key Laboratory of Rare Earth Materials Chemistry and Applications College of Chemistry and Molecular Engineering Peking University Beijing 100871 P. R. China
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai 200050 P. R. China
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8
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Zhou N, Zhang Z, Wang F, Li J, Xu X, Li H, Ding S, Liu J, Li X, Xie Y, Yang R, Ma Y, Zhai T. Spin Ordering Induced Broadband Photodetection Based on Two-Dimensional Magnetic Semiconductor α-MnSe. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2202177. [PMID: 35666075 PMCID: PMC9353471 DOI: 10.1002/advs.202202177] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/14/2022] [Revised: 05/05/2022] [Indexed: 06/15/2023]
Abstract
Two-dimensional (2D) magnetic semiconductors are considered to have great application prospects in spintronic logic devices, memory devices, and photodetectors, due to their unique structures and outstanding physical properties in 2D confinement. Understanding the influence of magnetism on optical/optoelectronic properties of 2D magnetic semiconductors is a significant issue for constructing multifunctional electronic devices and implementing sophisticated functions. Herein, the influence of spin ordering and magnons on the optical/optoelectronic properties of 2D magnetic semiconductor α-MnSe synthesized by space-confined chemical vapor deposition (CVD) is explored systematically. The spin-ordering-induced magnetic phase transition triggers temperature-dependent photoluminescence spectra to produce a huge transition at Néel temperature (TN ≈ 160 K). The magnons- and defects-induced emissions are the primary luminescence path below TN and direct internal 4 a T1g →6 A1g transition-induced emissions are the main luminescence path above TN . Additionally, the magnons and defect structures endow 2D α-MnSe with a broadband luminescence from 550 to 880 nm, and an ultraviolet-near-infrared photoresponse from 365 to 808 nm. Moreover, the device also demonstrates improved photodetection performance at 80 K, possibly influenced by spin ordering and trap states associated with defects. These above findings indicate that 2D magnetic semiconductor α-MnSe provides an excellent platform for magneto-optical and magneto-optoelectronic research.
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Affiliation(s)
- Nan Zhou
- School of Advanced Materials and NanotechnologyXidian UniversityXi'an710126P. R. China
- Guangzhou Institute of TechnologyXidian UniversityGuangzhou710068P. R. China
| | - Zhimiao Zhang
- School of Advanced Materials and NanotechnologyXidian UniversityXi'an710126P. R. China
| | - Fakun Wang
- State Key Laboratory of Materials Processing and Die and Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and TechnologyWuhan430074P. R. China
- School of Electrical and Electronic EngineeringNanyang Technological UniversitySingapore639798Singapore
| | - Junhao Li
- Institute of Information SensingXidian UniversityXi'an710126P. R. China
| | - Xiang Xu
- State Key Laboratory of Materials Processing and Die and Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Haoran Li
- School of Advanced Materials and NanotechnologyXidian UniversityXi'an710126P. R. China
| | - Su Ding
- School of Advanced Materials and NanotechnologyXidian UniversityXi'an710126P. R. China
| | - Jinmei Liu
- School of Advanced Materials and NanotechnologyXidian UniversityXi'an710126P. R. China
| | - Xiaobo Li
- School of Advanced Materials and NanotechnologyXidian UniversityXi'an710126P. R. China
- Guangzhou Institute of TechnologyXidian UniversityGuangzhou710068P. R. China
| | - Yong Xie
- School of Advanced Materials and NanotechnologyXidian UniversityXi'an710126P. R. China
| | - Rusen Yang
- School of Advanced Materials and NanotechnologyXidian UniversityXi'an710126P. R. China
| | - Ying Ma
- State Key Laboratory of Materials Processing and Die and Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die and Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and TechnologyWuhan430074P. R. China
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9
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Wang R, Wang F, Zhang X, Feng X, Zhao C, Bu K, Zhang Z, Zhai T, Huang F. Improved Polarization in the Sr6Cd2Sb6O7Se10 Oxyselenide through Design of Lateral Sublattices for Efficient Photoelectric Conversion. Angew Chem Int Ed Engl 2022. [DOI: 10.1002/ange.202206816] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
Affiliation(s)
- Ruiqi Wang
- Peking University College of Chemistry and Molecular Engineering College of Chemistry CHINA
| | - Fakun Wang
- Huazhong University of Science and Technology State Key Laboratory of Materials Processing and Die & Mould Technology School of Materials Science and Engineering CHINA
| | - Xian Zhang
- China Academy of Space Technology Qian Xuesen Laboratory of Space Technology CHINA
| | - Xin Feng
- Huazhong University of Science and Technology State Key Laboratory of Materials Processing and Die & Mould Technology School of Materials Science and Engineering CHINA
| | - Chendong Zhao
- Shanghai Institute of Ceramics Chinese Academy of Sciences State Key Laboratory of High-Performance Ceramics and Superfine Microstructure CHINA
| | - Kejun Bu
- Center for High Pressure Science and Technology Advanced Research HPSTAR CHINA
| | - Zhuang Zhang
- Shanghai Institute of Ceramics Chinese Academy of Sciences State Key Laboratory of High-Performance Ceramics and Superfine Microstructure CHINA
| | - Tianyou Zhai
- Huazhong University of Science and Technology State Key Laboratory of Materials Processing and Die & Mould Technology School of Materials Science and Engineering CHINA
| | - Fuqiang Huang
- Shanghai Institute of Ceramics Chinese Academy of Sciences dingxi road, no. 1295 Shanghai CHINA
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10
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Chen J, Li L, Gong P, Zhang H, Yin S, Li M, Wu L, Gao W, Long M, Shan L, Yan F, Li G. A Submicrosecond-Response Ultraviolet-Visible-Near-Infrared Broadband Photodetector Based on 2D Tellurosilicate InSiTe 3. ACS NANO 2022; 16:7745-7754. [PMID: 35499232 DOI: 10.1021/acsnano.1c11628] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
2D material (2DM) based photodetectors with broadband photoresponse are of great value for a vast number of applications such as multiwavelength photodetection, imaging, and night vision. However, compared with traditional photodetectors based on bulk material, the relatively slow speed performance of 2DM based photodetectors hinders their practical applications. Herein, a submicrosecond-response photodetector based on ternary telluride InSiTe3 with trigonal symmetry and layered structure was demonstrated in this study. The InSiTe3 based photodetectors exhibit an ultrafast photoresponse (545-576 ns) and broadband detection capabilities from the ultraviolet (UV) to the near-infrared (NIR) optical communication region (365-1310 nm). Besides, the photodetector presents an outstanding reversible and stable photoresponse in which the response performance remains consistent within 200 000 cycles of switch operation. These significant findings suggest that InSiTe3 can be a promising candidate for constructing fast response broadband 2DM based optoelectronic devices.
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Affiliation(s)
- Jiawang Chen
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P.R. China
- University of Science and Technology of China, Hefei 230026, P.R. China
| | - Liang Li
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P.R. China
- University of Science and Technology of China, Hefei 230026, P.R. China
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P.R. China
| | - Penglai Gong
- Key Laboratory of Optic-Electronic Information and Materials of Hebei Province, Institute of Life Science and Green Development, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China
| | - Hanlin Zhang
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P.R. China
| | - Shiqi Yin
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P.R. China
| | - Ming Li
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P.R. China
- University of Science and Technology of China, Hefei 230026, P.R. China
| | - Liangfei Wu
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P.R. China
- University of Science and Technology of China, Hefei 230026, P.R. China
| | - Wenshuai Gao
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P.R. China
| | - Mingsheng Long
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P.R. China
| | - Lei Shan
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P.R. China
| | - Feng Yan
- Department of Applied Physics, Research Institute of Intelligent Wearable Systems, The Hong Kong Polytechnic University, Kowloon, Hong Kong 999077, P.R. China
| | - Guanghai Li
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P.R. China
- University of Science and Technology of China, Hefei 230026, P.R. China
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11
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Zhen W, Zhou X, Weng S, Zhu W, Zhang C. Ultrasensitive, Ultrafast, and Gate-Tunable Two-Dimensional Photodetectors in Ternary Rhombohedral ZnIn 2S 4 for Optical Neural Networks. ACS APPLIED MATERIALS & INTERFACES 2022; 14:12571-12582. [PMID: 35234462 DOI: 10.1021/acsami.2c00063] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The demand for high-performance semiconductors in electronics and optoelectronics has prompted the expansion of low-dimensional materials research to ternary compounds. However, photodetectors based on 2D ternary materials usually suffer from large dark currents and slow response, which means increased power consumption and reduced performance. Here we report a systematic study of the optoelectronic properties of well-characterized rhombohedral ZnIn2S4 (R-ZIS) nanosheets which exhibit an extremely low dark current (7 pA at 5 V bias). The superior performance represented by a series of parameters surpasses most 2D counterparts. The ultrahigh specific detectivity (1.8 × 1014 Jones), comparably short response time (τrise = 222 μs, τdecay = 158 μs), and compatibility with high-frequency operation (1000 Hz) are particularly prominent. Moreover, a gate-tunable characteristic is observed, which is attributed to photogating and improves the photoresponse by 2 orders of magnitude. Gating technique can effectively modulate the photocurrent-generation mechanism from photoconductive effect to dominant photogating. The combination of ultrahigh sensitivity, ultrafast response, and high gate tunability makes the R-ZIS phototransistor an ideal device for low-energy-consumption and high-frequency optoelectronic applications, which is further demonstrated by its excellent performance in optical neural networks and promising potential in optical deep learning and computing.
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Affiliation(s)
- Weili Zhen
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, China
- University of Science and Technology of China, Hefei 230026, China
| | - Xi Zhou
- The Interdisciplinary Research Center, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210, China
- School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shirui Weng
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, China
| | - Wenka Zhu
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, China
| | - Changjin Zhang
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, China
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
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12
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Gogoi K, Chattopadhyay A. Surface Engineering of Quantum Dots for Self-Powered Ultraviolet Photodetection and Information Encryption. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2022; 38:2668-2676. [PMID: 35164501 DOI: 10.1021/acs.langmuir.1c03402] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
We demonstrate fabrication of photodetectors in the UVC and UVA regions, based on surface engineering of Mn2+-doped ZnS Qdot. Mn2+-doped ZnS Qdot exhibited UVC detection with a responsivity of 0.3 ± 0.02 A·W-1 and detectivity of 1.7 ± 0.2 1011 Jones. Following this, the Qdot was surface modified with 8-hydroxyquinoline 5-sulfonic acid ligand, which resulted in the formation of a bluish green zinc quinolate complex (Zn(QS)2) at the Qdot surface (defined as the quantum dot complex, QDC) exhibiting overall white photoluminescence. The detector developed with QDC as the photoactive material exhibited a responsivity of 0.2 ± 0.02 A·W-1 and detectivity of 1.2 ± 0.2 1011 Jones in the UVA band. This shift in the detection band from UVC in Qdot to UVA in QDC, through the surface complexation mechanism, is a new approach for tuning spectral detection featured in this work. Besides, the self-powered response of both the detectors exhibited attractive photoelectric characteristics. The detectors were incorporated in a portable prototype to show their potential application toward selective UVC and UVA spectral detection. Additionally, the dual-mode emission of the QDC was used for data encryption and decryption.
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Affiliation(s)
- Kasturi Gogoi
- Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati 781039, Assam, India
| | - Arun Chattopadhyay
- Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati 781039, Assam, India
- Department of Chemistry, Indian Institute of Technology Guwahati, Guwahati 781039, Assam, India
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Wu J, Wang F, Li H, Yang S, Li P, Zhao Y, Li Y, Zhai T. Epitaxial Growth of 2D Ultrathin Metastable γ-Bi 2 O 3 Flakes for High Performance Ultraviolet Photodetection. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2104244. [PMID: 34741412 DOI: 10.1002/smll.202104244] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/19/2021] [Revised: 09/13/2021] [Indexed: 06/13/2023]
Abstract
Ultraviolet detection is of great significance due to its wide applications in the missile tracking, flame detecting, pollution monitoring, and so on. The nonlayered semiconductor γ-Bi2 O3 is a promising candidate toward high-performance UV detection due to the wide bandgap, excellent light sensitivity, environmental stability, nontoxic and elemental abundance properties. However, controllable preparation of ultrathin 2D γ-Bi2 O3 flakes remains a challenge, owing to its nonlayered structure, metastable nature, and other competing phases. Moreover, the UV photodetectors based on 2D γ-Bi2 O3 flake have not been implemented yet. Here, ultrathin (down to 4.8 nm) 2D γ-Bi2 O3 flakes with high crystal quality are obtained via a van der Waals epitaxy method. The as-synthesized single-crystalline γ-Bi2 O3 flakes show a body-centered cubic structure and grown along (111) lattice plane as revealed by experimental observations. More importantly, photodetectors based on the as-synthesized 2D γ-Bi2 O3 flakes exhibit promising UV detection ability, including a responsivity of 64.5 A W-1 , a detectivity of 1.3 × 1013 Jones, and an ultrafast response speed (τrise ≈ 290 µs and τdecay ≈ 870 µs) at 365 nm, suggesting its great potential for various optoelectronic applications.
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Affiliation(s)
- Jie Wu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Fakun Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Haobo Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Sijie Yang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Pengyu Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yinghe Zhao
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yuan Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
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14
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Yoon SO, Jeon J, Choi KH, Jeong BJ, Chae S, Kim BJ, Oh S, Woo C, Lee B, Cho S, Kim TY, Jang HE, Ahn J, Dong X, Ghulam A, Park JH, Lee JH, Yu HK, Choi JY. High Breakdown Current Density in Quasi-1D van der Waals Layered Material Ta 2NiSe 7. ACS APPLIED MATERIALS & INTERFACES 2021; 13:52871-52879. [PMID: 34702025 DOI: 10.1021/acsami.1c14335] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
We synthesized ternary composition chalcogenide Ta2NiSe7, a quasi-one-dimensional (Q1D) material with excellent crystallinity. To utilize the excellent electrical conductivity property of Ta2NiSe7, the breakdown current density (JBD) according to thickness change through mechanical exfoliation was measured. It was confirmed that as the thickness decreased, the maximum breakdown voltage (VBD) increased, and at 18 nm thickness, 35 MA cm-2 of JBD was measured, which was 35 times higher than that of copper, which is commonly used as an interconnect material. By optimization of the exfoliation process, it is expected that through a theoretical model fitting, the JBD can be increased to about 356 MA cm-2. It is expected that the low-dimensional materials with ternary compositions proposed through this experiment can be used as candidates for current-carrying materials that are required for the miniaturization of various electronic devices.
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Affiliation(s)
- Sang Ok Yoon
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jiho Jeon
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Kyung Hwan Choi
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Byung Joo Jeong
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Sudong Chae
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Bum Jun Kim
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Seungbae Oh
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Chaeheon Woo
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Bom Lee
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Sooheon Cho
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Tae Yeong Kim
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Han Eol Jang
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jungyoon Ahn
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Xue Dong
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Asghar Ghulam
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jae-Hyuk Park
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jae-Hyun Lee
- Department of Materials Science and Engineering & Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Hak Ki Yu
- Department of Materials Science and Engineering & Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Jae-Young Choi
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
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15
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Yang L, Li M, Wang Y, Zhang Y, Liu Z, Ruan S, Wang Z, Wang S. An isocamphanyl-based fluorescent "turn-on" probe for highly sensitive and selective detection of Ga 3+ and application in vivo and in vitro. Analyst 2021; 146:7294-7305. [PMID: 34749386 DOI: 10.1039/d1an01368h] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/26/2022]
Abstract
A novel fluorescent probe 2-(4-(diethylamino)-2-hydroxybenzylidene)-N-(2,3,3-trimethylbicyclo[2.2.1]heptan-2-yl)hydrazinecarbothioamide (HT) was prepared in this study by a condensation reaction. HT has been confirmed to possess high specificity toward Ga3+ over other metal ions (including Al3+ and In3+) via a distinct fluorescence light-up response. Moreover, HT exhibited good detection performances for Ga3+ including high selectivity, excellent anti-interference ability, a wide working pH range, and good reversibility. The association constant and limit of detection (LOD) were calculated to be 5.34 × 103 M-1 and 1.18 × 10-6 M, respectively. The detection mechanism of HT toward Ga3+ was proposed and confirmed by 1H NMR analysis, HRMS analysis, and DFT calculations. A simple test strip-based portable detecting device and a molecular INHIBIT logic circuit were established for improving its practical applicability. Furthermore, the desirable sensing performance of HT for Ga3+ was successfully reconfirmed in MCF-7 cells and zebrafish.
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Affiliation(s)
- Lijuan Yang
- Co-Innovation Center of Efficient Processing and Utilization of Forest Resources, International Innovation Center for Forest Chemicals and Materials, College of Chemical Engineering, Nanjing Forestry University, Nanjing, 210037, China.
| | - Mingxin Li
- Co-Innovation Center of Efficient Processing and Utilization of Forest Resources, International Innovation Center for Forest Chemicals and Materials, College of Chemical Engineering, Nanjing Forestry University, Nanjing, 210037, China.
| | - Yunyun Wang
- Co-Innovation Center of Efficient Processing and Utilization of Forest Resources, International Innovation Center for Forest Chemicals and Materials, College of Chemical Engineering, Nanjing Forestry University, Nanjing, 210037, China.
| | - Yan Zhang
- Co-Innovation Center of Efficient Processing and Utilization of Forest Resources, International Innovation Center for Forest Chemicals and Materials, College of Chemical Engineering, Nanjing Forestry University, Nanjing, 210037, China.
| | - Zhipeng Liu
- College of Materials Science and Engineering, Nanjing Forestry University, Nanjing 210037, China
| | - Shutang Ruan
- Co-Innovation Center of Efficient Processing and Utilization of Forest Resources, International Innovation Center for Forest Chemicals and Materials, College of Chemical Engineering, Nanjing Forestry University, Nanjing, 210037, China.
| | - Zhonglong Wang
- Co-Innovation Center of Efficient Processing and Utilization of Forest Resources, International Innovation Center for Forest Chemicals and Materials, College of Chemical Engineering, Nanjing Forestry University, Nanjing, 210037, China.
| | - Shifa Wang
- Co-Innovation Center of Efficient Processing and Utilization of Forest Resources, International Innovation Center for Forest Chemicals and Materials, College of Chemical Engineering, Nanjing Forestry University, Nanjing, 210037, China.
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16
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Wang B, Tang M, Lou H, Li F, Bergara A, Yang G. Wide Band Gap P 3S Monolayer with Anisotropic and Ultrahigh Carrier Mobility. J Phys Chem Lett 2021; 12:8481-8488. [PMID: 34450014 DOI: 10.1021/acs.jpclett.1c02363] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Phosphorene has offered an additional advantage for developing new optoelectronic devices due to its anisotropic and high carrier mobility. However, its instability in air causes a rapid degradation of the performance of the device. Thus, improving the stability of phosphorene while maintaining its original properties has become the key to the development of high-performance electronic devices. Herein, we propose that the formation of two-dimensional (2D) P-rich P-S compounds could achieve this goal. First-principles swarm-structural searches revealed two previously unkonwn P3S and P2S monolayers. The P3S monolayer, consisting of n-bicyclo-P6 units along the armchair direction, exhibits anisotropic and wide band gap characteristics. Interestingly, its carrier mobility reaches 1.11 × 104 cm2 V-1 s-1 and is much higher than in phosphorene. Its electronic band gap and optical absorption coefficients in the ultraviolet region reach 2.71 eV and 105 cm-1, respectively. Additionally, the P3S monolayer has a high structural stability and resistance to air oxidation.
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Affiliation(s)
- Bo Wang
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, Jilin 130024, China
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao, Hebei 066004, China
| | - Meng Tang
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, Jilin 130024, China
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao, Hebei 066004, China
| | - Huan Lou
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, Jilin 130024, China
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao, Hebei 066004, China
| | - Fei Li
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao, Hebei 066004, China
| | - Aitor Bergara
- Departamento de Física, Universidad del País Vasco-Euskal Herriko Unibertsitatea, UPV/EHU, 48080 Bilbao, Spain
- Donostia International Physics Center (DIPC), 20018 Donostia, Spain
- Centro de Física de Materiales CFM, Centro Mixto CSIC-UPV/EHU, 20018 Donostia, Spain
| | - Guochun Yang
- Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, Jilin 130024, China
- State Key Laboratory of Metastable Materials Science & Technology and Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao, Hebei 066004, China
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17
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Yao J, Yang G. Multielement 2D layered material photodetectors. NANOTECHNOLOGY 2021; 32:392001. [PMID: 34111857 DOI: 10.1088/1361-6528/ac0a16] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2021] [Accepted: 06/10/2021] [Indexed: 06/12/2023]
Abstract
The pronounced quantum confinement effects, outstanding mechanical strength, strong light-matter interactions and reasonably high electric transport properties under atomically thin limit have conjointly established 2D layered materials (2DLMs) as compelling building blocks towards the next generation optoelectronic devices. By virtue of the diverse compositions and crystal structures which bring about abundant physical properties, multielement 2DLMs (ME2DLMs) have become a bran-new research focus of tremendous scientific enthusiasm. Herein, for the first time, this review provides a comprehensive overview on the latest evolution of ME2DLM photodetectors. The crystal structures, synthesis, and physical properties of various experimentally realized ME2DLMs as well as the development in metal-semiconductor-metal photodetectors are comprehensively summarized by dividing them into narrow-bandgap ME2DLMs (including Bi2O2X (X = S, Se, Te), EuMTe3(M = Bi, Sb), Nb2XTe4(X = Si, Ge), Ta2NiX5(X = S, Se), M2PdX6(M = Ta, Nb; X = S, Se), PbSnS2), moderate-bandgap ME2DLMs (including CuIn7Se11, CuTaS3, GaGeTe, TlMX2(M = Ga, In; X = S, Se)), wide-bandgap ME2DLMs (including BiOX (X = F, Cl, Br, I), MPX3(M = Fe, Ni, Mn, Cd, Zn; X = S, Se), ABP2X6(A = Cu, Ag; B = In, Bi; X = S, Se), Ga2In4S9), as well as topological ME2DLMs (MIrTe4(M = Ta, Nb)). In the last section, the ongoing challenges standing in the way of further development are underscored and the potential strategies settling them are proposed, which is aimed at navigating the future advancement of this fascinating domain.
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Affiliation(s)
- Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, 510275, Guangdong, People's Republic of China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, 510275, Guangdong, People's Republic of China
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18
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Tian Y, Vankova N, Weidler P, Kuc A, Heine T, Wöll C, Gu Z, Zhang J. Oriented Growth of In-Oxo Chain Based Metal-Porphyrin Framework Thin Film for High-Sensitive Photodetector. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:2100548. [PMID: 34306983 PMCID: PMC8292912 DOI: 10.1002/advs.202100548] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/09/2021] [Revised: 03/09/2021] [Indexed: 06/13/2023]
Abstract
The potential of metal-organic frameworks (MOFs) for applications in optoelectronics results from a unique combination of interesting photophysical properties and straightforward tunability of organic and inorganic units. Here, it is demonstrated that using MOF approach chromophores can be assembled into well-ordered 1D arrays using metal-oxo strands as lead structure, and the resulting porphyrinic rows exhibit unique photophysical properties and allow the realization of highly sensitive photodetectors. A porphyrinic MOF thin film, In-TCPP surface-coordinated MOF thin films with [021] orientation is fabricated using a layer-by-layer method, from In(NO3)3 and TCPP (5,10,15,20-(4-carboxyphenyl)porphyrin). Detailed experimental and theoretical analysis reveals that the assembly yields a structure where In-oxo strands running parallel to the substrate fix the chromophoric linkers to yield 1D arrays of porphyrins. The frontier orbitals of this highly anisotropic arrangement are localized in these columnar arrangements of porphyrins and result in high photoactivity, which is exploited to fabricate a photodetector with record (as compared to other organic materials) responsivity in visible regime of 7.28 × 1014 Jones and short rise/fall times (0.07/0.04 s). This oriented MOF thin film-based high-sensitive photodetector provides a new avenue to use inorganic, stable lead structures to assemble organic semiconductors into regular arrays, thus creating a huge potential for the fabrication of optoelectronic devices.
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Affiliation(s)
- Yi‐Bo Tian
- State Key Laboratory of Structural ChemistryFujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhou350002P. R. China
| | - Nina Vankova
- Faculty of Chemistry and Food ChemistryTechnical University DresdenDresden01069Germany
| | - Peter Weidler
- Institute of Functional Interfaces (IFG)Karlsruhe Institute of Technology (KIT)Eggenstein‐Leopoldshafen76344Germany
| | - Agnieszka Kuc
- Institute of Resource EcologyHelmholtz‐Center Dresden‐RossendorfLeipzig Research BranchLeipzig04318Germany
| | - Thomas Heine
- Faculty of Chemistry and Food ChemistryTechnical University DresdenDresden01069Germany
- Institute of Resource EcologyHelmholtz‐Center Dresden‐RossendorfLeipzig Research BranchLeipzig04318Germany
| | - Christof Wöll
- Institute of Functional Interfaces (IFG)Karlsruhe Institute of Technology (KIT)Eggenstein‐Leopoldshafen76344Germany
| | - Zhi‐Gang Gu
- State Key Laboratory of Structural ChemistryFujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhou350002P. R. China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of ChinaFuzhouFujian350108P. R. China
- University of Chinese Academy of SciencesBeijing100049P. R. China
| | - Jian Zhang
- State Key Laboratory of Structural ChemistryFujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhou350002P. R. China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of ChinaFuzhouFujian350108P. R. China
- University of Chinese Academy of SciencesBeijing100049P. R. China
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Song W, Chen J, Li Z, Fang X. Self-Powered MXene/GaN van der Waals Heterojunction Ultraviolet Photodiodes with Superhigh Efficiency and Stable Current Outputs. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2101059. [PMID: 34046946 DOI: 10.1002/adma.202101059] [Citation(s) in RCA: 65] [Impact Index Per Article: 21.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2021] [Revised: 04/01/2021] [Indexed: 06/12/2023]
Abstract
A self-powered, high-performance Ti3 C2 Tx MXene/GaN van der Waals heterojunction (vdWH)-based ultraviolet (UV) photodiode is reported. Such integration creates a Schottky junction depth that is larger than the UV absorption depth to sufficiently separate the photoinduced electron/hole pairs, boosting the peak internal quantum efficiency over the unity and the external quantum efficiency over 99% under weak UV light without bias. The proposed Ti3 C2 Tx /GaN vdWH UV photodiode demonstrates pronounced photoelectric performances working in self-powered mode, including a large responsivity (284 mA W-1 ), a high specific detectivity (7.06 × 1013 Jones), and fast response speed (rise/decay time of 7.55 µs/1.67 ms). Furthermore, the remarkable photovoltaic behavior leads to an impressive power conversion efficiency of 7.33% under 355 nm UV light illumination. Additionally, this work presents an easy-processing spray-deposition route for the fabrication of large-area UV photodiode arrays that exhibit highly uniform cell-to-cell performance. The MXene/GaN photodiode arrays with high-efficiency and self-powered ability show high potential for many applications, such as energy-saving communication, imaging, and sensing networks.
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Affiliation(s)
- Weidong Song
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
- College of Applied Physics and Materials, Wuyi University, Jiangmen, 529020, P. R. China
| | - Jiaxin Chen
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Ziliang Li
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Xiaosheng Fang
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
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20
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Yan Y, Yang J, Du J, Zhang X, Liu YY, Xia C, Wei Z. Cross-Substitution Promoted Ultrawide Bandgap up to 4.5 eV in a 2D Semiconductor: Gallium Thiophosphate. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2008761. [PMID: 33876467 DOI: 10.1002/adma.202008761] [Citation(s) in RCA: 22] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/28/2020] [Revised: 02/26/2021] [Indexed: 06/12/2023]
Abstract
Exploring 2D ultrawide bandgap semiconductors (UWBSs) will be conductive to the development of next-generation nanodevices, such as deep-ultraviolet photodetectors, single-photon emitters, and high-power flexible electronic devices. However, a gap still remains between the theoretical prediction of novel 2D UWBSs and the experimental realization of the corresponding materials. The cross-substitution process is an effective way to construct novel semiconductors with the favorable parent characteristics (e.g., structure) and the better physicochemical properties (e.g., bandgap). Herein, a simple case is offered for rational design and syntheses of 2D UWBS GaPS4 by employing state-of-the-art GeS2 as a similar structural model. Benefiting from the cosubstitution of Ge with lighter Ga and P, the GaPS4 crystals exhibit sharply enlarged optical bandgaps (few-layer: 3.94 eV and monolayer: 4.50 eV) and superior detection performances with high responsivity (4.89 A W-1 ), high detectivity (1.98 × 1012 Jones), and high quantum efficiency (2.39 × 103 %) in the solar-blind ultraviolet region. Moreover, the GaPS4 -based photodetector exhibits polarization-sensitive photoresponse with a linear dichroic ratio of 1.85 at 254 nm, benefitting from its in-plane structural anisotropy. These results provide a pathway for the discovery and fabrication of 2D UWBS anisotropic materials, which become promising candidates for future solar-blind ultraviolet and polarization-sensitive sensors.
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Affiliation(s)
- Yong Yan
- Henan Key Laboratory of Photovoltaic Materials, School of Physics, Henan Normal University, Xinxiang, 453007, China
| | - Juehan Yang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100083, China
| | - Juan Du
- State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, China
| | - Xiaomei Zhang
- Henan Key Laboratory of Infrared Materials & Spectrum Measures and Applications, Henan Normal University, Xinxiang, 453007, China
| | - Yue-Yang Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100083, China
| | - Congxin Xia
- Henan Key Laboratory of Photovoltaic Materials, School of Physics, Henan Normal University, Xinxiang, 453007, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100083, China
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21
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Wang P, Meng F, Su H, Liu L, Khan MA, Li H. A highly selective "turn-on" water-soluble fluorescent sensor for gallium ion detection. RSC Adv 2021; 11:19747-19754. [PMID: 35479197 PMCID: PMC9033676 DOI: 10.1039/d1ra02582a] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/01/2021] [Accepted: 05/18/2021] [Indexed: 12/21/2022] Open
Abstract
In this work, a novel sensor, (E)-N′-(3-(tert-butyl)-2-hydroxybenzylidene)thiophene-2-carbohydrazide (1), based on salicylaldehyde and thiophene hydrazide moieties was designed and synthesized. The single-crystal structure of 1 was achieved and studied for understanding its functional properties. The interaction and recognition abilities of 1 with different metal ions were investigated. Sensor 1 showed excellent “turn-on” fluorescence with highly selective and specific recognition ability in the presence of gallium ions (Ga3+) in an aqueous solution. The sensing behavior of 1 with Ga3+ was also studied by photophysical experiments, ESI-MS analysis, and 1H NMR titration. The limit of detection (LOD) and limit of quantification (LOQ) of 1 for the detection of Ga3+ in an aqueous solution were calculated as 58 nM, and 192 nM, respectively. DFT calculations were carried out to optimize the configuration of 1 and 1–Ga3+ complexes and rationalize the photophysical experimental data. Highly selective test strips based on sensor 1 were developed for Ga3+ detection. Sensor 1 was also used to detect Ga3+ in actual water samples, and a considerable recovery rate was obtained. In this work, a highly selective water-soluble “turn-on” fluorescent sensor for gallium ion recognition was reported.![]()
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Affiliation(s)
- Pengfei Wang
- Key Laboratory of Cluster Science of Ministry of Education, School of Chemistry and Chemical Engineering, Beijing Institute of Technology Beijing 100081 P. R. China +86-10-81381366
| | - Fanda Meng
- School of Basic Medicine, Shandong First Medical University, Shandong Academy of Medical Sciences Jinan 250062 P. R. China
| | - Hao Su
- Key Laboratory of Cluster Science of Ministry of Education, School of Chemistry and Chemical Engineering, Beijing Institute of Technology Beijing 100081 P. R. China +86-10-81381366
| | - Lijie Liu
- Key Laboratory of Cluster Science of Ministry of Education, School of Chemistry and Chemical Engineering, Beijing Institute of Technology Beijing 100081 P. R. China +86-10-81381366
| | - Maroof Ahmad Khan
- Key Laboratory of Cluster Science of Ministry of Education, School of Chemistry and Chemical Engineering, Beijing Institute of Technology Beijing 100081 P. R. China +86-10-81381366
| | - Hui Li
- Key Laboratory of Cluster Science of Ministry of Education, School of Chemistry and Chemical Engineering, Beijing Institute of Technology Beijing 100081 P. R. China +86-10-81381366
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22
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Zuo N, Nie A, Hu C, Shen W, Jin B, Hu X, Liu Z, Zhou X, Zhai T. Synergistic Additive-Assisted Growth of 2D Ternary In 2 SnS 4 with Giant Gate-Tunable Polarization-Sensitive Photoresponse. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2008078. [PMID: 33760364 DOI: 10.1002/smll.202008078] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/24/2020] [Revised: 02/01/2021] [Indexed: 06/12/2023]
Abstract
2D ternary materials exhibit great promise in the field of polarization-sensitive photodetectors due to the low-symmetry crystal structure. However, the realization of ternary material growth is still a huge challenge because of the complex reaction process. Here, for the first time, 2D ternary In2 SnS4 flakes are obtained via synergistic additive of salt and molecular sieve-assisted chemical vapor deposition. Raman vibration mode of In2 SnS4 flakes exhibits polarization-dependent properties. The polarization-resolved absorption spectroscopy and azimuth-dependent reflectance difference microscopy further confirm its anisotropy of in-plane optical absorption and reflection. Besides, the In2 SnS4 flake based device on mica shows ultrafast rising and decay rates of ≈20 and 20 µs. Impressively, In2 SnS4 flake based phototransistor demonstrates giant gate-tunable polarization-sensitive photoresponse: the dichroic ratio can be adjusted in the range of 1.13-1.70 with gate voltage varying from -35-35 V. This work provides an effective means for modulating the polarization-sensitive photoresponse, which may significantly promote the research progress of polarization-sensitive photodetectors.
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Affiliation(s)
- Nian Zuo
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Anmin Nie
- Center for High Pressure Science, State Key Laboratory of Metastable Materials Science & Technology, Yanshan University, Qinhuangdao, 066004, P. R. China
| | - Chunguang Hu
- State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Tianjin, 300072, P. R. China
| | - Wanfu Shen
- State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Tianjin, 300072, P. R. China
| | - Bao Jin
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Xiaozong Hu
- Green Catalysis Center, and College of Chemistry, Zhengzhou University, Zhengzhou, 450001, P. R. China
| | - Zhongyuan Liu
- Center for High Pressure Science, State Key Laboratory of Metastable Materials Science & Technology, Yanshan University, Qinhuangdao, 066004, P. R. China
| | - Xing Zhou
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
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23
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Chen J, Tan C, Li G, Chen L, Zhang H, Yin S, Li M, Li L, Li G. 2D Silicon-Based Semiconductor Si 2 Te 3 toward Broadband Photodetection. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2006496. [PMID: 33656798 DOI: 10.1002/smll.202006496] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/18/2020] [Revised: 12/22/2020] [Indexed: 06/12/2023]
Abstract
Silicon-based semiconductor materials dominate modern technology for more than half a century with extraordinary electrical-optical performance and mutual processing compatibility. Now, 2D materials have rapidly established themselves as prospective candidates for the next-generation semiconductor industry because of their novel properties. Considering chemical and processing compatibility, silicon-based 2D materials possess significant advantages in integrating with silicon. Here, a systematic study is reported on the structural, electrical, and optical performance of silicon telluride (Si2 Te3 ) 2D material, a IV-VI silicon-based semiconductor with a layered structure. The ultrawide photoluminescence (PL) spectra in the range of 550-1050 nm reveals the intrinsic defects in Si2 Te3 . The Si2 Te3 -based field-effect transistors (FETs) and photodetectors show a typical p-type behavior and a remarkable broadband spectral response in the range of 405-1064 nm. Notably, the photoresponsivity and detectivity of the photodetector device with 13.5 nm in thickness and upon 405 nm illumination can reach up to 65 A W-1 and 2.81 × 1012 Jones, respectively, outperforming many traditional broadband photodetectors. It is believed this work will excite interests in further exploring the practical application of 2D silicon-based materials in the field of optoelectronics.
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Affiliation(s)
- Jiawang Chen
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Chinese Academy of Sciences, University of Science and Technology of China, Hefei, 230031, P. R. China
| | - Chaoyang Tan
- Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, P. R. China
| | - Gang Li
- Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, P. R. China
| | - Lijie Chen
- Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, P. R. China
| | - Hanlin Zhang
- Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, P. R. China
| | - Shiqi Yin
- Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, P. R. China
| | - Ming Li
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Chinese Academy of Sciences, University of Science and Technology of China, Hefei, 230031, P. R. China
| | - Liang Li
- Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, P. R. China
- Photoelectric Conversion Energy Materials and Devices Key Laboratory of Anhui Province, Anhui University, Hefei, 230601, P. R. China
| | - Guanghai Li
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Chinese Academy of Sciences, University of Science and Technology of China, Hefei, 230031, P. R. China
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24
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Zhang J, Tan B, Zhang X, Gao F, Hu Y, Wang L, Duan X, Yang Z, Hu P. Atomically Thin Hexagonal Boron Nitride and Its Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2000769. [PMID: 32803781 DOI: 10.1002/adma.202000769] [Citation(s) in RCA: 36] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/24/2020] [Revised: 05/06/2020] [Indexed: 06/11/2023]
Abstract
Atomically thin hexagonal boron nitride (h-BN) is an emerging star of 2D materials. It is taken as an optimal substrate for other 2D-material-based devices owing to its atomical flatness, absence of dangling bonds, and excellent stability. Specifically, h-BN is found to be a natural hyperbolic material in the mid-infrared range, as well as a piezoelectric material. All the unique properties are beneficial for novel applications in optoelectronics and electronics. Currently, most of these applications are merely based on exfoliated h-BN flakes at their proof-of-concept stages. Chemical vapor deposition (CVD) is considered as the most promising approach for producing large-scale, high-quality, atomically thin h-BN films and heterostructures. Herein, CVD synthesis of atomically thin h-BN is the focus. Also, the growth kinetics are systematically investigated to point out general strategies for controllable and scalable preparation of single-crystal h-BN film. Meanwhile, epitaxial growth of 2D materials onto h-BN and at its edge to construct heterostructures is summarized, emphasizing that the specific orientation of constituent parts in heterostructures can introduce novel properties. Finally, recent applications of atomically thin h-BN and its heterostructures in optoelectronics and electronics are summarized.
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Affiliation(s)
- Jia Zhang
- School of Materials Science and Engineering, Harbin Institute of Technology, No. 92, Dazhi Street, Harbin, 150001, China
- Key Laboratory of Microsystems and Microstructure Manufacturing, Ministry of Education, Harbin Institute of Technology, No. 2 Yikuang Street, Harbin, 150080, China
- State Key Laboratory of Robotics and System, Harbin Institute of Technology, No. 2 Yikuang Street, Harbin, 150080, China
| | - Biying Tan
- Key Laboratory of Microsystems and Microstructure Manufacturing, Ministry of Education, Harbin Institute of Technology, No. 2 Yikuang Street, Harbin, 150080, China
| | - Xin Zhang
- Key Laboratory of Microsystems and Microstructure Manufacturing, Ministry of Education, Harbin Institute of Technology, No. 2 Yikuang Street, Harbin, 150080, China
| | - Feng Gao
- School of Materials Science and Engineering, Harbin Institute of Technology, No. 92, Dazhi Street, Harbin, 150001, China
| | - Yunxia Hu
- School of Materials Science and Engineering, Harbin Institute of Technology, No. 92, Dazhi Street, Harbin, 150001, China
| | - Lifeng Wang
- School of Materials Science and Engineering, Harbin Institute of Technology, No. 92, Dazhi Street, Harbin, 150001, China
| | - Xiaoming Duan
- School of Materials Science and Engineering, Harbin Institute of Technology, No. 92, Dazhi Street, Harbin, 150001, China
- Institute for Advanced Ceramics, Harbin Institute of Technology, No. 92 Dazhi Street, Harbin, 150001, China
| | - Zhihua Yang
- School of Materials Science and Engineering, Harbin Institute of Technology, No. 92, Dazhi Street, Harbin, 150001, China
- Institute for Advanced Ceramics, Harbin Institute of Technology, No. 92 Dazhi Street, Harbin, 150001, China
| | - PingAn Hu
- School of Materials Science and Engineering, Harbin Institute of Technology, No. 92, Dazhi Street, Harbin, 150001, China
- Key Laboratory of Microsystems and Microstructure Manufacturing, Ministry of Education, Harbin Institute of Technology, No. 2 Yikuang Street, Harbin, 150080, China
- State Key Laboratory of Robotics and System, Harbin Institute of Technology, No. 2 Yikuang Street, Harbin, 150080, China
- Institute for Advanced Ceramics, Harbin Institute of Technology, No. 92 Dazhi Street, Harbin, 150001, China
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25
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Yu H, Liao Q, Kang Z, Wang Z, Liu B, Zhang X, Du J, Ou Y, Hong M, Xiao J, Zhang Z, Zhang Y. Atomic-Thin ZnO Sheet for Visible-Blind Ultraviolet Photodetection. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2005520. [PMID: 33136343 DOI: 10.1002/smll.202005520] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/05/2020] [Indexed: 06/11/2023]
Abstract
The atomic-thin 2D semiconductors have emerged as plausible candidates for future optoelectronics with higher performance in terms of the scaling process. However, currently reported 2D photodetectors still have huge shortcomings in ultraviolet and especially visible-blind wavelengths. Here, a simple and nontoxic surfactant-assisted synthesis strategy is reported for the controllable growth of atomically thin (1.5 to 4 nm) ZnO nanosheets with size ranging from 3 to 30 µm. Benefit from the short carbon chains and the water-soluble ability of sodium dodecyl sulfate (SDS), the synthesized ZnO nanosheets possess high crystal quality and clean surface, leading to good compatibility with traditional micromanufacturing technology and high sensitivity to UV light. The photodetectors constructed with ZnO demonstrate the highest responsivity (up to 2.0 × 104 A W-1 ) and detectivity (D* = 6.83 × 1014 Jones) at a visible-blind wavelength of 254 nm, and the photoresponse speed is optimized by the 400 °C annealing treatment (τR = 3.97 s, τD = 5.32 s), thus the 2D ZnO can serve as a promising material to fill in the gap for deep-UV photodetection. The method developed here opens a new avenue to controllably synthesize 2D nonlayered materials and accelerates their applications in high-performance optoelectronic devices.
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Affiliation(s)
- Huihui Yu
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Qingliang Liao
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Zhuo Kang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Zhenyu Wang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Baishan Liu
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Xiankun Zhang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Junli Du
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Yang Ou
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Mengyu Hong
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Jiankun Xiao
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Zheng Zhang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Yue Zhang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
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26
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Xu L, Duan Z, Zhang P, Wang X, Zhang J, Shang L, Jiang K, Li Y, Zhu L, Gong Y, Hu Z, Chu J. Ferroelectric-Modulated MoS 2 Field-Effect Transistors as Multilevel Nonvolatile Memory. ACS APPLIED MATERIALS & INTERFACES 2020; 12:44902-44911. [PMID: 32931241 DOI: 10.1021/acsami.0c09951] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Ferroelectric field-effect transistors (FeFETs) with semiconductors as the channel material and ferroelectrics as the gate insulator are attractive and/or promising devices for application in nonvolatile memory. In FeFETs, the conductivity states of the semiconductor are utilized to explore the polarization directions of the ferroelectric material. Herein, we report FeFETs based on a few layers of MoS2 on a 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) single crystal with switchable multilevel states. It was found that the On-Off ratios can reach as high as 106. We prove that the interaction effect of ferroelectric polarization and interface charge traps has a great influence on the transport behaviors and nonvolatile memory characteristics of MoS2/PMN-PT FeFETs. In order to further study the underlying physical mechanism, we have researched the time-dependent electrical properties in the temperature range from 300 to 500 K. The separation of effects from ferroelectric polarization and interfacial traps on electrical behaviors of FeFETs provides us with an opportunity to better understand the operation mechanism, which suggests a fantastic way for multilevel, low-power consumption, and high-density nonvolatile memory devices.
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Affiliation(s)
- Liping Xu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Zhihua Duan
- Key Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University, Shanghai 200234, China
| | - Peng Zhang
- School of Materials Science & Engineering, Beihang University, Beijing 100191, China
| | - Xiang Wang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Jinzhong Zhang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Liyan Shang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Kai Jiang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Yawei Li
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Liangqing Zhu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Yongji Gong
- School of Materials Science & Engineering, Beihang University, Beijing 100191, China
| | - Zhigao Hu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
- Shanghai Institute of Intelligent Electronics & Systems, Fudan University, Shanghai 200433, China
| | - Junhao Chu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
- Shanghai Institute of Intelligent Electronics & Systems, Fudan University, Shanghai 200433, China
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Shim GW, Hong W, Cha JH, Park JH, Lee KJ, Choi SY. TFT Channel Materials for Display Applications: From Amorphous Silicon to Transition Metal Dichalcogenides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1907166. [PMID: 32176401 DOI: 10.1002/adma.201907166] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2019] [Revised: 12/16/2019] [Indexed: 06/10/2023]
Abstract
As the need for super-high-resolution displays with various form factors has increased, it has become necessary to produce high-performance thin-film transistors (TFTs) that enable faster switching and higher current driving of each pixel in the display. Over the past few decades, hydrogenated amorphous silicon (a-Si:H) has been widely utilized as a TFT channel material. More recently, to meet the requirement of new types of displays such as organic light-emitting diode displays, and also to overcome the performance and reliability issues of a-Si:H, low-temperature polycrystalline silicon and amorphous oxide semiconductors have partly replaced a-Si:H channel materials. Basic material properties and device structures of TFTs in commercial displays are explored, and then the potential of atomically thin layered transition metal dichalcogenides as next-generation channel materials is discussed.
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Affiliation(s)
- Gi Woong Shim
- Graphene/2D Materials Research Center, Center for Advanced Materials Discovery towards 3D Display, School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea
| | - Woonggi Hong
- Graphene/2D Materials Research Center, Center for Advanced Materials Discovery towards 3D Display, School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea
| | - Jun-Hwe Cha
- Graphene/2D Materials Research Center, Center for Advanced Materials Discovery towards 3D Display, School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea
| | - Jung Hwan Park
- Department of Mechanical Engineering, University of California, Berkeley, CA, 94720, USA
| | - Keon Jae Lee
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea
| | - Sung-Yool Choi
- Graphene/2D Materials Research Center, Center for Advanced Materials Discovery towards 3D Display, School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea
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Sun H, Zhou X, Wang X, Xu L, Zhang J, Jiang K, Shang L, Hu Z, Chu J. P-N conversion of charge carrier types and high photoresponsive performance of composition modulated ternary alloy W(S xSe 1-x) 2 field-effect transistors. NANOSCALE 2020; 12:15304-15317. [PMID: 32648866 DOI: 10.1039/d0nr04633g] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Transition metal dichalcogenides (TMDs) have emerged as a new class of two-dimensional (2D) materials, which are promising for diverse applications in nanoelectronics, optoelectronics, and photonics. To satisfy the requirements of the building blocks of functional devices, systematic modulation of the band gap and carrier type of TMDs materials becomes a significant challenge. Here, we report a salt-assisted chemical vapor deposition (CVD) approach for the simultaneous growth of alloy W(SxSe1-x)2 nanosheets with variable alloy compositions. Electrical transport studies based on the as-fabricated W(SxSe1-x)2 nanosheet field-effect transistors (FETs) demonstrate that charge carrier types of alloy nanosheet transistors can be systematically tuned by adjusting the alloy composition. Temperature-dependent current measurement shows that the main scattering mechanism is the charged impurity scattering. The effective Schottky barrier heights of bipolar W(SxSe1-x)2 transistors are initially increased and then decreased with increasing positive (or negative) gate voltage, which is tunable by varying the alloy composition. In addition, the tunability of these W(SxSe1-x)2-based ambipolar transistors is suitable for logic and analog applications and represents a critical step toward future fundamental studies as well as for the rational design of new 2D electronics with tailored spectral responses, and simpler and higher integration densities. Finally, the high photoresponsivity (up to 914 mA W-1) and detectivity (4.57 × 1010 Jones) of ultrathin W(SxSe1-x)2 phototransistors imply their potential applications in flexible light-detection and light-harvesting devices. These band gap engineered 2D structures could open up an exciting opportunity and contribute to finding diverse applications in future functional electronic/optoelectronic devices.
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Affiliation(s)
- Huimin Sun
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Xin Zhou
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Xiang Wang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Liping Xu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Jinzhong Zhang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Kai Jiang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Liyan Shang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
| | - Zhigao Hu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China. and Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China and Shanghai Institute of Intelligent Electronics & Systems, Fudan University, Shanghai 200433, China
| | - Junhao Chu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China. and Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China and Shanghai Institute of Intelligent Electronics & Systems, Fudan University, Shanghai 200433, China
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29
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Chen L, Li Z, Yan C. High-performance near-infrared Schottky-photodetector based graphene/In 2S 3 van der Waals heterostructures. RSC Adv 2020; 10:23662-23667. [PMID: 35517344 PMCID: PMC9054918 DOI: 10.1039/d0ra02033h] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/03/2020] [Accepted: 05/19/2020] [Indexed: 11/21/2022] Open
Abstract
Two-dimensional (2D) β-In2S3 is a natural defective n-type semiconductor attracting considerable interest for its excellent photoelectronic performance. However, β-In2S3 based photodetectors exhibited a weak near-infrared photoresponse compared to visible wavelength in past reports. In this work, high-quality 2D β-In2S3 nanosheets were prepared by a space-confined chemical vapor deposition (CVD) method. Graphene/In2S3 van der Waals heterostructures were constructed to realize an enhanced near-infrared photodetection performance by a series of transfer processes. The photodetectors based on graphene/In2S3 van der Waals heterostructures through junction carrier separation exhibited a better infrared performance of high photoresponsivity (R light) of 0.49 mA W-1, external quantum efficiency (EQE) of 0.07%, and detectivity (D*) of 3.05 × 107 jones using an 808 nm laser.
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Affiliation(s)
- Long Chen
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China Chengdu 610054 China
| | - Zhenghan Li
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China Chengdu 610054 China
| | - Chaoyi Yan
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China Chengdu 610054 China
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30
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Han W, Li C, Yang S, Luo P, Wang F, Feng X, Liu K, Pei K, Li Y, Li H, Li L, Gao Y, Zhai T. Atomically Thin Oxyhalide Solar-Blind Photodetectors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2000228. [PMID: 32346935 DOI: 10.1002/smll.202000228] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/13/2020] [Revised: 02/23/2020] [Accepted: 04/07/2020] [Indexed: 06/11/2023]
Abstract
2D wide-bandgap semiconductors demonstrate great potential in fabricating solar-blind ultraviolet (SBUV) photodetectors. However, the low responsivity of 2D solar-blind photodetectors still limits their practical applications. Here, high-responsivity solar-blind photodetectors are achieved based on 2D bismuth oxychloride (BiOCl) flakes. The 2D BiOCl photodetectors exhibit a responsivity up to 35.7 A W-1 and a specific detectivity of 2.2 × 1010 Jones under 250 nm illumination with 17.8 µW cm-2 power density. In particular, the enhanced photodetective performances are demonstrated in BiOCl photodetectors with increasing ambient temperature. Surprisingly, their responsivity can reach 2060 A W-1 at 450 K under solar-blind light illumination, maybe owing to the formation of defective BiOCl grains evidenced by in situ transmission electron microscopy. The high responsivity throughout the solar-blind range indicates that 2D BiOCl is a promising candidate for SBUV detection.
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Affiliation(s)
- Wei Han
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Chen Li
- Center for Nanoscale Characterization and Devices, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Sanjun Yang
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Peng Luo
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Fakun Wang
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Xin Feng
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Kailang Liu
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Ke Pei
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Yuan Li
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Huiqiao Li
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Luying Li
- Center for Nanoscale Characterization and Devices, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Yihua Gao
- School of Physics, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
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31
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Ouyang L, Armstrong JPK, Chen Q, Lin Y, Stevens MM. Void-free 3D Bioprinting for In-situ Endothelialization and Microfluidic Perfusion. ADVANCED FUNCTIONAL MATERIALS 2020; 30:1909009. [PMID: 35677899 DOI: 10.1002/adfm.201909909] [Citation(s) in RCA: 97] [Impact Index Per Article: 24.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/27/2019] [Indexed: 05/21/2023]
Abstract
Two major challenges of 3D bioprinting are the retention of structural fidelity and efficient endothelialization for tissue vascularization. We address both of these issues by introducing a versatile 3D bioprinting strategy, in which a templating bioink is deposited layer-by-layer alongside a matrix bioink to establish void-free multimaterial structures. After crosslinking the matrix phase, the templating phase is sacrificed to create a well-defined 3D network of interconnected tubular channels. This void-free 3D printing (VF-3DP) approach circumvents the traditional concerns of structural collapse, deformation and oxygen inhibition, moreover, it can be readily used to print materials that are widely considered "unprintable". By pre-loading endothelial cells into the templating bioink, the inner surface of the channels can be efficiently cellularized with a confluent endothelial layer. This in-situ endothelialization method can be used to produce endothelium with a far greater uniformity than can be achieved using the conventional post-seeding approach. This VF-3DP approach can also be extended beyond tissue fabrication and towards customized hydrogel-based microfluidics and self-supported perfusable hydrogel constructs.
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Affiliation(s)
- Liliang Ouyang
- Department of Materials, Department of Bioengineering, Institute of Biomedical Engineering, Imperial College London, London, SW7 2AZ, UK
| | - James P K Armstrong
- Department of Materials, Department of Bioengineering, Institute of Biomedical Engineering, Imperial College London, London, SW7 2AZ, UK
| | - Qu Chen
- Department of Materials, Department of Bioengineering, Institute of Biomedical Engineering, Imperial College London, London, SW7 2AZ, UK
| | - Yiyang Lin
- Department of Materials, Department of Bioengineering, Institute of Biomedical Engineering, Imperial College London, London, SW7 2AZ, UK
| | - Molly M Stevens
- Department of Materials, Department of Bioengineering, Institute of Biomedical Engineering, Imperial College London, London, SW7 2AZ, UK
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32
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Liu S, Wang YC, Chang CM, Yasuda T, Fukui N, Maeda H, Long P, Nakazato K, Jian WB, Xie W, Tsukagoshi K, Nishihara H. Solution-processed organometallic quasi-two-dimensional nanosheets as a hole buffer layer for organic light-emitting devices. NANOSCALE 2020; 12:6983-6990. [PMID: 32207501 DOI: 10.1039/d0nr00240b] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Two-dimensional (2D) vdW materials have been integrated into optoelectronic devices to achieve exceptional functionality. However, the integration of large-area 2D thin films into organic light-emitting devices (OLEDs) remains challenging because of the finite number of inorganic 2D materials and the high-temperature requirements of their deposition process. The construction of 2D organometallic materials holds immense potential because of their solution synthesis and unlimited structural and functional diversity. Here, we report a facile route using an oil-water interfacial coordination reaction between organic ligands and divalent metal ions to synthesize crystalline quasi-2D organometallic bis(dithiolato)nickel (NiDT) nanosheets with a centimeter scale and a tunable thickness. The NiDT nanosheets can be directly integrated into OLEDs for use as a hole buffer layer and a fluorescent mounting medium without the aid of a transfer process. Moreover, OLEDs with NiDT nanosheets show not only comparable efficiency to conventional OLEDs but also prolonged device lifetime by nearly 2 times. These results open up a new dimension to use quasi-2D organometallic nanosheets as functional layers in large-area organic devices.
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Affiliation(s)
- Shihao Liu
- WPI International Center for Materials Nanoarchitectonics (WPI-MANA) & International Center for Young Scientists (ICYS), National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan.
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33
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Ferhati H, Djeffal F, Benhaya AE, Bendjerad A. Giant Detectivity of ZnO-Based Self-Powered UV Photodetector by Inserting an Engineered Back Gold Layer Using RF Sputtering. IEEE SENSORS JOURNAL 2020; 20:3512-3519. [DOI: 10.1109/jsen.2019.2960271] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/02/2023]
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34
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Ma D, Wang R, Zhao J, Chen Q, Wu L, Li D, Su L, Jiang X, Luo Z, Ge Y, Li J, Zhang Y, Zhang H. A self-powered photodetector based on two-dimensional boron nanosheets. NANOSCALE 2020; 12:5313-5323. [PMID: 32080700 DOI: 10.1039/d0nr00005a] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Owing to their intriguing characteristics, the ongoing pursuit of emerging mono-elemental two-dimensional (2D) nanosheets beyond graphene is an exciting research area for next-generation applications. Herein, we demonstrate that highly crystalline 2D boron (B) nanosheets can be efficiently synthesized by employing a modified liquid phase exfoliation method. Moreover, carrier dynamics has been systematically investigated by using femtosecond time-resolved transient absorption spectroscopy, demonstrating an ultrafast recovery speed during carrier transfer. Based on these results, the optoelectronic performance of the as-synthesized 2D B nanosheets has been investigated by applying them in photoelectrochemical (PEC)-type and field effect transistor (FET)-type photodetectors. The experimental results revealed that the as-fabricated PEC device not only exhibited a favourable self-powered capability, but also a high photoresponsivity of 2.9-91.7 μA W-1 in the UV region. Besides, the FET device also exhibited a tunable photoresponsivity in the range of 174-281.3 μA W-1 under the irradiation of excited light at 405 nm. We strongly believe that the current work shall pave the path for successful utilization of 2D B nanosheets in electronic and optoelectronic devices. Moreover, the proposed method can be utilized to explore other mono-elemental 2D nanomaterials.
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Affiliation(s)
- Dingtao Ma
- Faculty of Information Technology, Macau University of Science and Technology, Taipa, Macau SAR 999078, P. R. China
| | - Rui Wang
- Collaborative Innovation Center for Optoelectronic Science and Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, P. R. China. and Department of Electronic Engineering, Xiamen University, Xiamen 361005, P. R. China
| | - Jinlai Zhao
- Faculty of Information Technology, Macau University of Science and Technology, Taipa, Macau SAR 999078, P. R. China and Collaborative Innovation Center for Optoelectronic Science and Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, P. R. China.
| | - Qianyuan Chen
- School of Physics and Technology, and MOE Key Laboratory of Artificial Micro- and Nano-structures, Wuhan University, Wuhan 430072, China
| | - Leiming Wu
- Faculty of Information Technology, Macau University of Science and Technology, Taipa, Macau SAR 999078, P. R. China
| | - Delong Li
- Collaborative Innovation Center for Optoelectronic Science and Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, P. R. China.
| | - Liumei Su
- Collaborative Innovation Center for Optoelectronic Science and Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, P. R. China.
| | - Xiantao Jiang
- Collaborative Innovation Center for Optoelectronic Science and Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, P. R. China.
| | - Zhengqian Luo
- Department of Electronic Engineering, Xiamen University, Xiamen 361005, P. R. China
| | - Yanqi Ge
- Collaborative Innovation Center for Optoelectronic Science and Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, P. R. China.
| | - Jianqing Li
- Faculty of Information Technology, Macau University of Science and Technology, Taipa, Macau SAR 999078, P. R. China
| | - Yupeng Zhang
- Collaborative Innovation Center for Optoelectronic Science and Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, P. R. China.
| | - Han Zhang
- Collaborative Innovation Center for Optoelectronic Science and Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, P. R. China.
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Gong C, Chu J, Qian S, Yin C, Hu X, Wang H, Wang Y, Ding X, Jiang S, Li A, Gong Y, Wang X, Li C, Zhai T, Xiong J. Large-Scale Ultrathin 2D Wide-Bandgap BiOBr Nanoflakes for Gate-Controlled Deep-Ultraviolet Phototransistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1908242. [PMID: 32077189 DOI: 10.1002/adma.201908242] [Citation(s) in RCA: 36] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/16/2019] [Indexed: 06/10/2023]
Abstract
Ternary two-dimensional (2D) semiconductors with controllable wide bandgap, high ultraviolet (UV) absorption coefficient, and critical tuning freedom degree of stoichiometry variation have a great application prospect for UV detection. However, as-reported ternary 2D semiconductors often possess a bandgap below 3.0 eV, which must be further enlarged to achieve comprehensively improved UV, especially deep-UV (DUV), detection capacity. Herein, sub-one-unit-cell 2D monolayer BiOBr nanoflakes (≈0.57 nm) with a large size of 70 µm are synthesized for high-performance DUV detection due to the large bandgap of 3.69 eV. Phototransistors based on the 2D ultrathin BiOBr nanoflakes deliver remarkable DUV detection performance including ultrahigh photoresponsivity (Rλ , 12739.13 A W-1 ), ultrahigh external quantum efficiency (EQE, 6.46 × 106 %), and excellent detectivity (D*, 8.37 × 1012 Jones) at 245 nm with a gate voltage (Vg ) of 35 V attributed to the photogating effects. The ultrafast response (τrise = 102 µs) can be achieved by utilizing photoconduction effects at Vg of -40 V. The combination of photocurrent generation mechanisms for BiOBr-based phototransistors controlled by Vg can pave a way for designing novel 2D optoelectronic materials to achieve optimal device performance.
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Affiliation(s)
- Chuanhui Gong
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Junwei Chu
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Shifeng Qian
- Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Chujun Yin
- Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Xiaozong Hu
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Hongbo Wang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Yang Wang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Xiang Ding
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Shangchi Jiang
- Technology Development Center, Metatest Optoelectronic CO. LTD, Nanjing, 210008, P. R. China
| | - Alei Li
- Academy for Advanced Interdisciplinary Studies and Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Youpin Gong
- Academy for Advanced Interdisciplinary Studies and Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Xianfu Wang
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Chaobo Li
- Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Jie Xiong
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
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Li S, Zhang Y, Yang W, Liu H, Fang X. 2D Perovskite Sr 2 Nb 3 O 10 for High-Performance UV Photodetectors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1905443. [PMID: 31773828 DOI: 10.1002/adma.201905443] [Citation(s) in RCA: 74] [Impact Index Per Article: 18.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/22/2019] [Revised: 10/28/2019] [Indexed: 05/21/2023]
Abstract
2D perovskites, due to their unique properties and reduced dimension, are promising candidates for future optoelectronic devices. However, the development of stable and nontoxic 2D wide-bandgap perovskites remains a challenge. 2D all-inorganic perovskite Sr2 Nb3 O10 (SNO) nanosheets with thicknesses down to 1.8 nm are synthesized by liquid exfoliation, and for the first time, UV photodetectors (PDs) based on individual few-layer SNO sheets are investigated. The SNO sheet-based PDs exhibit excellent UV detecting performance (narrowband responsivity = 1214 A W-1 , external quantum efficiency = 5.6 × 105 %, detectivity = 1.4 × 1014 Jones @270 nm, 1 V bias), and fast response speed (trise ≈ 0.4 ms, tdecay ≈ 40 ms), outperforming most reported individual 2D sheet-based UV PDs. Furthermore, the carrier transport properties of SNO and the performance of SNO-based phototransistors are successfully controlled by gate voltage. More intriguingly, the photodetecting performance and carrier transport properties of SNO sheets are dependent on their thickness. In addition, flexible and transparent PDs with high mechanical stability are easily fabricated based on SNO nanosheet film. This work sheds light on the development of high-performance optoelectronics based on low-dimensional wide-bandgap perovskites in the future.
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Affiliation(s)
- Siyuan Li
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Yong Zhang
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Wei Yang
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Hui Liu
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Xiaosheng Fang
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
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37
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Abstract
Our review provides a comprehensive overview of the latest evolution of broadband photodetectors (BBPDs) based on 2D materials (2DMs). We begin with BBPDs built on various 2DM channels, including narrow-bandgap 2DMs, 2D topological semimetals, 2D charge density wave compounds, and 2D heterojunctions. Then, we introduce defect-engineered 2DM BBPDs, including vacancy engineering, heteroatom incorporation, and interfacial engineering. Subsequently, we summarize 2DM based mixed-dimensional (0D-2D, 1D-2D, 2D-3D, and 0D-2D-3D) BBPDs. Finally, we provide several viewpoints for the future development of this burgeoning field.
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Affiliation(s)
- Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China.
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Hao S, Yan S, Wang Y, Xu T, Zhang H, Cong X, Li L, Liu X, Cao T, Gao A, Zhang L, Jia L, Long M, Hu W, Wang X, Tan P, Sun L, Cui X, Liang SJ, Miao F. Edge-Epitaxial Growth of InSe Nanowires toward High-Performance Photodetectors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e1905902. [PMID: 31867892 DOI: 10.1002/smll.201905902] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/15/2019] [Revised: 11/24/2019] [Indexed: 06/10/2023]
Abstract
Semiconducting nanowires offer many opportunities for electronic and optoelectronic device applications due to their unique geometries and physical properties. However, it is challenging to synthesize semiconducting nanowires directly on a SiO2 /Si substrate due to lattice mismatch. Here, a catalysis-free approach is developed to achieve direct synthesis of long and straight InSe nanowires on SiO2 /Si substrates through edge-homoepitaxial growth. Parallel InSe nanowires are achieved further on SiO2 /Si substrates through controlling growth conditions. The underlying growth mechanism is attributed to a selenium self-driven vapor-liquid-solid process, which is distinct from the conventional metal-catalytic vapor-liquid-solid method widely used for growing Si and III-V nanowires. Furthermore, it is demonstrated that the as-grown InSe nanowire-based visible light photodetector simultaneously possesses an extraordinary photoresponsivity of 271 A W-1 , ultrahigh detectivity of 1.57 × 1014 Jones, and a fast response speed of microsecond scale. The excellent performance of the photodetector indicates that as-grown InSe nanowires are promising in future optoelectronic applications. More importantly, the proposed edge-homoepitaxial approach may open up a novel avenue for direct synthesis of semiconducting nanowire arrays on SiO2 /Si substrates.
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Affiliation(s)
- Song Hao
- National Laboratory of Solid-State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Shengnan Yan
- National Laboratory of Solid-State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Yang Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Tao Xu
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing, 210096, China
| | - Hui Zhang
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing, 210096, China
| | - Xin Cong
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, College of Materials Science and Opto-Electronic Technology, Chinese Academy of Sciences, Beijing, 100083, China
| | - Lingfei Li
- School of Electronic Science and Technology, Nanjing University, Nanjing, 210093, China
| | - Xiaowei Liu
- National Laboratory of Solid-State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Tianjun Cao
- National Laboratory of Solid-State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Anyuan Gao
- National Laboratory of Solid-State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Lili Zhang
- National Laboratory of Solid-State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Lanxin Jia
- National Laboratory of Solid-State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Mingsheng Long
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Xiaomu Wang
- School of Electronic Science and Technology, Nanjing University, Nanjing, 210093, China
| | - Pingheng Tan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, College of Materials Science and Opto-Electronic Technology, Chinese Academy of Sciences, Beijing, 100083, China
| | - Litao Sun
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing, 210096, China
| | - Xinyi Cui
- State Key Laboratory of Pollution Control and Resource Reuse, School of the Environment, Nanjing University, Nanjing, 210046, China
| | - Shi-Jun Liang
- National Laboratory of Solid-State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Feng Miao
- National Laboratory of Solid-State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
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Du Z, Fu D, Teng J, Wang L, Gao F, Yang W, Zhang H, Fang X. CsPbI 3 Nanotube Photodetectors with High Detectivity. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2019; 15:e1905253. [PMID: 31769610 DOI: 10.1002/smll.201905253] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/15/2019] [Revised: 11/07/2019] [Indexed: 06/10/2023]
Abstract
In the present work, the exploration of photodetectors (PDs) based on CsPbI3 nanotubes are reported. The as-prepared CsPbI3 nanotubes can be stable for more than 2 months under air conditions. It is found that, in comparison to the nanowires, nanobelts, and nanosheets, the nanotubes can be advantageous to be used as the functional units for PDs, which is mainly attributed to the enhanced light absorption ability induced by the light trapping effect within the tube cavity. As a proof of concept, the as-constructed PDs based on CsPbI3 nanotube present an overall excellent performance with a responsivity (Rλ ), external quantum efficiency (EQE) and detectivity of 1.84 × 103 A W-1 , 5.65 × 105 % and 9.99 × 1013 Jones, respectively, which are all comparable to state-of-the-art ones for all-inorganic perovskite PDs.
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Affiliation(s)
- Zhentao Du
- College of Materials Science and Engineering, Hunan University, Changsha, 410082, P. R. China
- Institute of Materials, Ningbo University of Technology, Ningbo, 315016, P. R. China
| | - Dingfa Fu
- College of Materials Science and Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Jie Teng
- College of Materials Science and Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Lin Wang
- Institute of Materials, Ningbo University of Technology, Ningbo, 315016, P. R. China
| | - Fengmei Gao
- Institute of Materials, Ningbo University of Technology, Ningbo, 315016, P. R. China
| | - Weiyou Yang
- Institute of Materials, Ningbo University of Technology, Ningbo, 315016, P. R. China
| | - Hui Zhang
- College of Materials Science and Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Xiaosheng Fang
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
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Hu M, Yan A, Huang J, Huang F, Li F, Cui Q, Li Q, Wang X. Novel 2D hybrids composed of SnIn 4S 8 nanoplates on BiOBr nanosheets for enhanced photocatalytic applications. NANOTECHNOLOGY 2019; 31:105202. [PMID: 31751963 DOI: 10.1088/1361-6528/ab5a1f] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
In the last ten years, bismuth oxybromide (BiOBr) has attracted wide attention due to its superior optoelectronic property. However, its practical application still suffers from slow carrier transport and high carrier recombination. Here we report a kind of novel tannum indium sulfide (SnIn4S8)/BiOBr hybrid prepared by a two-step hydrothermal method. The results showed that small amount of SnIn4S8 had no influence on the crystal phase of BiOBr, but the morphology could be regulated from nanosheet to nanoflower. Specially, SnIn4S8 exerted a slight effect on the light absorption and band gap of BiOBr. Importantly, SnIn4S8/BiOBr hybrids exhibited remarkable enhancement of the photocatalytic activity towards the degradation of rhodamin B (RhB) dye molecules. SnIn4S8/BiOBr-0.20 with 99.8% degradation efficiency had the highest photocatalytic activity within 40 min, while it was only 71.1% for pure BiOBr. The enhanced photocatalytic activity was mainly attributed to efficient interfacial transfer and low carrier recombination. This work will help us understand the photocatalytic mechanism of bismuth oxyhalide hybrids.
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Affiliation(s)
- Miao Hu
- Low Carbon Energy Institute, China University of Mining and Technology, Xuzhou 221008, People's Republic of China. School of Materials Science and Engineering, China University of Mining and Technology, Xuzhou 221116, People's Republic of China
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Xu L, Zhang P, Jiang H, Wang X, Chen F, Hu Z, Gong Y, Shang L, Zhang J, Jiang K, Chu J. Large-Scale Growth and Field-Effect Transistors Electrical Engineering of Atomic-Layer SnS 2. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2019; 15:e1904116. [PMID: 31588680 DOI: 10.1002/smll.201904116] [Citation(s) in RCA: 27] [Impact Index Per Article: 5.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/27/2019] [Revised: 08/28/2019] [Indexed: 06/10/2023]
Abstract
2D layers of metal dichalcogenides are of considerable interest for high-performance electronic devices for their unique electronic properties and atomically thin geometry. 2D SnS2 nanosheets with a bandgap of ≈2.6 eV have been attracting intensive attention as one potential candidate for modern electrocatalysis, electronic, and/or optoelectronic fields. However, the controllable growth of large-size and high-quality SnS2 atomic layers still remains a challenge. Herein, a salt-assisted chemical vapor deposition method is provided to synthesize atomic-layer SnS2 with a large crystal size up to 410 µm and good uniformity. Particularly, the as-fabricated SnS2 nanosheet-based field-effect transistors (FETs) show high mobility (2.58 cm2 V-1 s-1 ) and high on/off ratio (≈108 ), which is superior to other reported SnS2 -based FETs. Additionally, the effects of temperature on the electrical properties are systematically investigated. It is shown that the scattering mechanism transforms from charged impurities scattering to electron-phonon scattering with the temperature. Moreover, SnS2 can serve as an ideal material for energy storage and catalyst support. The high performance together with controllable growth of SnS2 endow it with great potential for future applications in electrocatalysis, electronics, and optoelectronics.
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Affiliation(s)
- Liping Xu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, P. R. China
| | - Peng Zhang
- School of Materials Science & Engineering, Beihang University, Beijing, 100191, P. R. China
| | - Huaning Jiang
- School of Materials Science & Engineering, Beihang University, Beijing, 100191, P. R. China
| | - Xiang Wang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, P. R. China
| | - Fangfang Chen
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, P. R. China
| | - Zhigao Hu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, P. R. China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, 030006, Shanxi, P. R. China
- Shanghai Institute of Intelligent Electronics & Systems, Fudan University, Shanghai, 200433, P. R. China
| | - Yongji Gong
- School of Materials Science & Engineering, Beihang University, Beijing, 100191, P. R. China
| | - Liyan Shang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, P. R. China
| | - Jinzhong Zhang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, P. R. China
| | - Kai Jiang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, P. R. China
| | - Junhao Chu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, P. R. China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, 030006, Shanxi, P. R. China
- Shanghai Institute of Intelligent Electronics & Systems, Fudan University, Shanghai, 200433, P. R. China
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Wei C, Fei H, Tian Y, An Y, Zeng G, Feng J, Qian Y. Room-Temperature Liquid Metal Confined in MXene Paper as a Flexible, Freestanding, and Binder-Free Anode for Next-Generation Lithium-Ion Batteries. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2019; 15:e1903214. [PMID: 31583828 DOI: 10.1002/smll.201903214] [Citation(s) in RCA: 23] [Impact Index Per Article: 4.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/20/2019] [Revised: 08/24/2019] [Indexed: 06/10/2023]
Abstract
Exploring flexible lithium-ion batteries is required with the ever-increasing demand for wearable and portable electronic devices. Selecting a flexible conductive substrate accompanying with closely coupled active materials is the key point. Here, a lightweight, flexible, and freestanding MXene/liquid metal paper is fabricated by confining 3 °C GaInSnZn liquid metal in the matrix of MXene paper without any binder or conductive additive. When used as anode for lithium-ion cells, it can deliver a high discharge capacity of 638.79 mAh g-1 at 20 mA g-1 . It also exhibits satisfactory rate capacities, with discharge capacities of 507.42, 483.33, 480.22, 452.30, and 404.47 mAh g-1 at 50, 100, 200, 500, and 1000 mA g-1 , respectively. The cycling performance is obviously improved by slightly reducing the charge-discharge voltage range. The composite paper also has better electrochemical performance than liquid metal coated Cu foil. This study proposes a novel flexible anode by a clever combination of MXene paper and low-melting point liquid metal, paving the way for next-generation lithium-ion batteries.
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Affiliation(s)
- Chuanliang Wei
- SDU & Rice Joint Center for Carbon Nanomaterials, Key Laboratory for Liquid-Solid Structural Evolution & Processing of Materials (Ministry of Education), School of Materials Science and Engineering, Shandong University, Jinan, Shandong, 250061, P. R. China
| | - Huifang Fei
- SDU & Rice Joint Center for Carbon Nanomaterials, Key Laboratory for Liquid-Solid Structural Evolution & Processing of Materials (Ministry of Education), School of Materials Science and Engineering, Shandong University, Jinan, Shandong, 250061, P. R. China
| | - Yuan Tian
- SDU & Rice Joint Center for Carbon Nanomaterials, Key Laboratory for Liquid-Solid Structural Evolution & Processing of Materials (Ministry of Education), School of Materials Science and Engineering, Shandong University, Jinan, Shandong, 250061, P. R. China
| | - Yongling An
- SDU & Rice Joint Center for Carbon Nanomaterials, Key Laboratory for Liquid-Solid Structural Evolution & Processing of Materials (Ministry of Education), School of Materials Science and Engineering, Shandong University, Jinan, Shandong, 250061, P. R. China
| | - Guifang Zeng
- SDU & Rice Joint Center for Carbon Nanomaterials, Key Laboratory for Liquid-Solid Structural Evolution & Processing of Materials (Ministry of Education), School of Materials Science and Engineering, Shandong University, Jinan, Shandong, 250061, P. R. China
| | - Jinkui Feng
- SDU & Rice Joint Center for Carbon Nanomaterials, Key Laboratory for Liquid-Solid Structural Evolution & Processing of Materials (Ministry of Education), School of Materials Science and Engineering, Shandong University, Jinan, Shandong, 250061, P. R. China
| | - Yitai Qian
- Hefei National Laboratory for Physical Science at Microscale, Department of Chemistry, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China
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Gupta A, Chowdhury RK, Ray SK, Srivastava SK. Selective photoresponse of plasmonic silver nanoparticle decorated Bi 2Se 3 nanosheets. NANOTECHNOLOGY 2019; 30:435204. [PMID: 31320602 DOI: 10.1088/1361-6528/ab3382] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The plasmon-enhanced photoresponse properties of a Ag nanoparticle decorated Bi2Se3 nanosheet (AGBS)/p-Si heterojunction device have been studied. The Ag nanoparticles, Bi2Se3 nanosheets, and AGBS nanocomposite are synthesized chemically. Microscopic investigations, ultimately of the AGBS nanocomposite, reveal that the Bi2Se3 nanosheets of thickness ∼20 nm and lateral dimension ∼1 μm are decorated with Ag nanoparticles of sizes 20-40 nm in the nanocomposite. The x-ray diffraction pattern of AGBS shows that apart from being in a metallic state, the Ag in the AGBS is also in the form of compounds with Bi, Se, and additionally O. This observation is further complemented by the x-ray photoelectron spectrum, which shows the presence of Ag0 and Ag+ states of Ag in AGBS. The UV-visible absorption spectra show the plasmonic peak of the Ag nanoparticles occurs at 420 nm; the peak is shifted to ∼500 nm in AGBS due to the modified dielectric environment of the nanoparticles. The AGBS/p-Si heterojunction shows excellent photoresponse properties, with a responsivity of 0.28 A/W, a fairly high detectivity of 4 × 1010 Jones, and an EQE of 71% under 10 V reverse bias at a 500 nm wavelength. The plasmon enhanced photoresponse at the selective wavelength makes this material attractive for high performance optoelectronic devices.
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Affiliation(s)
- Anu Gupta
- Department of Physics, Indian Institute of Technology Kharagpur, Kharagpur 721302, India
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Ying H, Li X, Wu Y, Yao Y, Xi J, Su W, Jin C, Xu M, He Z, Zhang Q. High-performance ultra-violet phototransistors based on CVT-grown high quality SnS 2 flakes. NANOSCALE ADVANCES 2019; 1:3973-3979. [PMID: 36132114 PMCID: PMC9418408 DOI: 10.1039/c9na00471h] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/01/2019] [Accepted: 08/21/2019] [Indexed: 05/07/2023]
Abstract
van der Waals layered two-dimensional (2D) metal dichalcogenides, such as SnS2, have garnered great interest owing to their new physics in the ultrathin limit, and become potential candidates for the next-generation electronics and/or optoelectronics fields. Herein, we report high-performance UV photodetectors established on high quality SnS2 flakes and address the relatively lower photodetection capability of the thinner flakes via a compatible gate-controlling strategy. SnS2 flakes with different thicknesses were mechanically exfoliated from CVT-grown high-quality 2H-SnS2 single crystals. The photodetectors fabricated using SnS2 flakes reveal a desired response performance (R λ ≈ 112 A W-1, EQE ≈ 3.7 × 104%, and D* ≈ 1.18 × 1011 Jones) under UV light with a very low power density (0.2 mW cm-2 @ 365 nm). Specifically, SnS2 flakes present a positive thickness-dependent photodetection behavior caused by the enhanced light absorption capacity of thicker samples. Fortunately, the responsivity of thin SnS2 flakes (e.g. ∼15 nm) could be indeed enhanced to ∼140 A W-1 under a gate bias of +20 V, reaching the performance level of thicker samples without gate bias (e.g. ∼144 A W-1 for a ∼60 nm flake). Our results offer an efficient way to choose 2D crystals with controllable thicknesses as optimal candidates for desirable optoelectronic devices.
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Affiliation(s)
- Haoting Ying
- College of Materials & Environmental Engineering, Hangzhou Dianzi University Xiasha Higher Education Zone Hangzhou 310018 P. R. China
| | - Xin Li
- College of Materials & Environmental Engineering, Hangzhou Dianzi University Xiasha Higher Education Zone Hangzhou 310018 P. R. China
| | - Yutong Wu
- College of Materials & Environmental Engineering, Hangzhou Dianzi University Xiasha Higher Education Zone Hangzhou 310018 P. R. China
| | - Yi Yao
- College of Materials & Environmental Engineering, Hangzhou Dianzi University Xiasha Higher Education Zone Hangzhou 310018 P. R. China
| | - Junhua Xi
- College of Materials & Environmental Engineering, Hangzhou Dianzi University Xiasha Higher Education Zone Hangzhou 310018 P. R. China
| | - Weitao Su
- College of Materials & Environmental Engineering, Hangzhou Dianzi University Xiasha Higher Education Zone Hangzhou 310018 P. R. China
- College of Science, Hangzhou Dianzi University Xiasha Higher Education Zone Hangzhou 310018 P. R. China
| | - Chengchao Jin
- College of Materials & Environmental Engineering, Hangzhou Dianzi University Xiasha Higher Education Zone Hangzhou 310018 P. R. China
| | - Minxuan Xu
- College of Materials & Environmental Engineering, Hangzhou Dianzi University Xiasha Higher Education Zone Hangzhou 310018 P. R. China
| | - Zhiwei He
- College of Materials & Environmental Engineering, Hangzhou Dianzi University Xiasha Higher Education Zone Hangzhou 310018 P. R. China
| | - Qi Zhang
- College of Materials & Environmental Engineering, Hangzhou Dianzi University Xiasha Higher Education Zone Hangzhou 310018 P. R. China
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Zhao S, Wang L, Fu L. Precise Vapor-Phase Synthesis of Two-Dimensional Atomic Single Crystals. iScience 2019; 20:527-545. [PMID: 31655063 PMCID: PMC6818371 DOI: 10.1016/j.isci.2019.09.038] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/05/2019] [Revised: 09/19/2019] [Accepted: 09/24/2019] [Indexed: 02/06/2023] Open
Abstract
Two-dimensional atomic single crystals (2DASCs) have drawn immense attention because of their potential for fundamental research and new technologies. Novel properties of 2DASCs are closely related to their atomic structures, and effective modulation of the structures allows for exploring various practical applications. Precise vapor-phase synthesis of 2DASCs with tunable thickness, selectable phase, and controllable chemical composition can be realized to adjust their band structures and electronic properties. This review highlights the latest advances in the precise vapor-phase synthesis of 2DASCs. We thoroughly elaborate on strategies toward the accurate control of layer number, phase, chemical composition of layered 2DASCs, and thickness of non-layered 2DASCs. Finally, we suggest forward-looking solutions to the challenges and directions of future developments in this emerging field.
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Affiliation(s)
- Shasha Zhao
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China
| | - Luyang Wang
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China
| | - Lei Fu
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China.
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Zhang ZX, Li C, Lu Y, Tong XW, Liang FX, Zhao XY, Wu D, Xie C, Luo LB. Sensitive Deep Ultraviolet Photodetector and Image Sensor Composed of Inorganic Lead-Free Cs 3Cu 2I 5 Perovskite with Wide Bandgap. J Phys Chem Lett 2019; 10:5343-5350. [PMID: 31452370 DOI: 10.1021/acs.jpclett.9b02390] [Citation(s) in RCA: 58] [Impact Index Per Article: 11.6] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
In this work, a sensitive deep ultraviolet (DUV) light photodetector based on inorganic and lead-free Cs3Cu2I5 crystalline film derived by a solution method was reported. Optoelectronic characterization revealed that the perovskite device exhibited nearly no sensitivity to visible illumination with wavelength of 405 nm but exhibited pronounced sensitivity to both DUV and UV light illumination with response speeds of 26.2/49.9 ms for rise/fall time. The Ilight/Idark ratio could reach 127. What is more, the responsivity and specific detectivity were calculated to be 64.9 mA W-1 and 6.9 × 1011 Jones, respectively. In addition, the device could keep its photoresponsivity after storage in air environment for a month. It is also found that the capability of Cs3Cu2I5 crystalline film device can readily record still DUV image with acceptable resolution. The above results confirm that the DUV photodetector may hold great potential for future DUV optoelectronic device and systems.
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Affiliation(s)
| | | | | | | | | | | | - Di Wu
- School of Physics and Engineering and Key Laboratory of Material Physics of Ministry of Education , Zhengzhou University , Zhengzhou, Henan 450052 , China
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Hu X, Huang P, Liu K, Jin B, Zhang X, Zhang X, Zhou X, Zhai T. Salt-Assisted Growth of Ultrathin GeSe Rectangular Flakes for Phototransistors with Ultrahigh Responsivity. ACS APPLIED MATERIALS & INTERFACES 2019; 11:23353-23360. [PMID: 31187617 DOI: 10.1021/acsami.9b06425] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Two-dimensional (2D) GeSe is an important IVA-VIA semiconductor for future applications in electronics and optoelectronics because of its high absorption coefficient, mobility, and photoresponsivity. However, the controllable synthesis of 2D GeSe flakes is still a huge problem. Here, high-quality single-crystalline ultrathin 2D GeSe flakes are synthesized by a salt-assisted chemical vapor deposition method. The flakes tend to grow along the [010] crystal orientation presenting a rectangular shape with a thickness down to 5 nm. Then, the electrical and optoelectronic properties have been systematically investigated. A thickness-dependent Schottky barrier is shown in GeSe field-effect transistors. The p-type conductivity of GeSe is mainly caused by the Ge deficiency, which is proven by a variable-temperature experiment and theoretical calculations. In addition, the phototransistors based on as-grown GeSe flakes present an ultrahigh responsivity of 1.8 × 104 A/W and an excellent external quantum efficiency of 4.2 × 106%.
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Affiliation(s)
- Xiaozong Hu
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering , Huazhong University of Science and Technology (HUST) , Wuhan 430074 , P. R. China
| | - Pu Huang
- Shenzhen Key Laboratory of Flexible Memory Materials and Devices, College of Electronic Science and Technology , Shenzhen University , Nanhai Avenue 3688 , Shenzhen , Guangdong 518060 , P. R. China
| | - Kailang Liu
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering , Huazhong University of Science and Technology (HUST) , Wuhan 430074 , P. R. China
| | - Bao Jin
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering , Huazhong University of Science and Technology (HUST) , Wuhan 430074 , P. R. China
| | - Xun Zhang
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering , Huazhong University of Science and Technology (HUST) , Wuhan 430074 , P. R. China
| | - Xiuwen Zhang
- Shenzhen Key Laboratory of Flexible Memory Materials and Devices, College of Electronic Science and Technology , Shenzhen University , Nanhai Avenue 3688 , Shenzhen , Guangdong 518060 , P. R. China
| | - Xing Zhou
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering , Huazhong University of Science and Technology (HUST) , Wuhan 430074 , P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering , Huazhong University of Science and Technology (HUST) , Wuhan 430074 , P. R. China
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Wang F, Zhang Y, Gao Y, Luo P, Su J, Han W, Liu K, Li H, Zhai T. 2D Metal Chalcogenides for IR Photodetection. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2019; 15:e1901347. [PMID: 31111680 DOI: 10.1002/smll.201901347] [Citation(s) in RCA: 47] [Impact Index Per Article: 9.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/14/2019] [Revised: 04/16/2019] [Indexed: 05/25/2023]
Abstract
Infrared (IR) photodetectors are finding diverse applications in imaging, information communication, military, etc. 2D metal chalcogenides (2DMCs) have attracted increasing interest in view of their unique structures and extraordinary physical properties. They have demonstrated outstanding IR detection performance including high responsivity and detectivity, high on/off ratio, fast response rate, stable room temperature operability, and good mechanical flexibility, which has opened up a new prospect in next-generation IR photodetectors. This Review presents a comprehensive summary of recent progress in advanced IR photodetectors based on 2DMCs. The rationale of the photodetectors containing photocurrent generation mechanisms and performance parameters are briefly introduced. The device performances of 2DMCs-based IR photodetectors are also systematically summarized, and some representative achievements are highlighted as well. Finally, conclusions and outlooks are delivered as a guideline for this thriving field.
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Affiliation(s)
- Fakun Wang
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yue Zhang
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yu Gao
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Peng Luo
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Jianwei Su
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Wei Han
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Kailang Liu
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Huiqiao Li
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
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50
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He X, Wu C, Qian Y, Li Y, Zhang L, Ding F, Chen H, Shen J. Highly sensitive and selective light-up fluorescent probe for monitoring gallium and chromium ions in vitro and in vivo. Analyst 2019; 144:3807-3816. [DOI: 10.1039/c9an00625g] [Citation(s) in RCA: 26] [Impact Index Per Article: 5.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/18/2022]
Abstract
Here reported an NBDT sensor could be effectively responsive to gallium and chromium for bio-imaging in vivo.
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Affiliation(s)
- Xiaojun He
- School of Ophthalmology & Optometry
- School of Biomedical Engineering
- Wenzhou Medical University
- Wenzhou
- China
| | - Chenglin Wu
- Organ Transplant Center
- The First Affiliated Hospital of Sun Yat-sen University
- Guangzhou
- China
| | - Yuna Qian
- Wenzhou Institute of Biomaterials and Engineering
- Chinese Academy of Science
- Wenzhou
- China
| | - Yahui Li
- School of Ophthalmology & Optometry
- School of Biomedical Engineering
- Wenzhou Medical University
- Wenzhou
- China
| | - Lilei Zhang
- College of Food and Drug
- Luoyang Normal University
- Luoyang
- China
| | - Feng Ding
- Department of Microbiology and Immunology
- School of Basic Medical Sciences
- Wenzhou Medical University
- Wenzhou
- China
| | - Hong Chen
- College of Food and Drug
- Luoyang Normal University
- Luoyang
- China
| | - Jianliang Shen
- School of Ophthalmology & Optometry
- School of Biomedical Engineering
- Wenzhou Medical University
- Wenzhou
- China
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