1
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Zhou N, Dang Z, Li H, Sun Z, Deng S, Li J, Li X, Bai X, Xie Y, Li L, Zhai T. Low-Symmetry 2D t-InTe for Polarization-Sensitive UV-Vis-NIR Photodetection. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2400311. [PMID: 38804863 DOI: 10.1002/smll.202400311] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/13/2024] [Revised: 03/23/2024] [Indexed: 05/29/2024]
Abstract
Polarization-sensitive photodetection grounded on low-symmetry 2D materials has immense potential in improving detection accuracy, realizing intelligent detection, and enabling multidimensional visual perception, which has promising application prospects in bio-identification, optical communications, near-infrared imaging, radar, military, and security. However, the majority of the reported polarized photodetection are limited by UV-vis response range and low anisotropic photoresponsivity factor, limiting the achievement of high-performance anisotropic photodetection. Herein, 2D t-InTe crystal is introduced into anisotropic systems and developed to realize broadband-response and high-anisotropy-ratio polarized photodetection. Stemming from its narrow band gap and intrinsic low-symmetry lattice characteristic, 2D t-InTe-based photodetector exhibits a UV-vis-NIR broadband photoresponse and significant photoresponsivity anisotropy behavior, with an exceptional in-plane anisotropic factor of 1.81@808 nm laser, surpassing the performance of most reported 2D counterparts. This work expounds the anisotropic structure-activity relationship of 2D t-InTe crystal, and identifies 2D t-InTe as a prospective candidate for high-performance polarization-sensitive optoelectronics, laying the foundation for future multifunctional device applications.
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Affiliation(s)
- Nan Zhou
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
- Guangzhou Institute of Technology, Xidian University, Guangzhou, 710068, P. R. China
| | - Ziwei Dang
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
| | - Haoran Li
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
| | - Zongdong Sun
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Shijie Deng
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
| | - Junhao Li
- Institute of Information Sensing, Xidian University, Xi'an, 710126, P. R. China
| | - Xiaobo Li
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
- Guangzhou Institute of Technology, Xidian University, Guangzhou, 710068, P. R. China
| | - Xiaoxia Bai
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
| | - Yong Xie
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
| | - Liang Li
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
- Optics Valley Laboratory, Hubei, 430074, P. R. China
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2
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Alam TI, Liu K, Hani SU, Ahmed S, Tsang YH. Advances in Group-10 Transition Metal Dichalcogenide PdSe 2-Based Photodetectors: Outlook and Perspectives. SENSORS (BASEL, SWITZERLAND) 2024; 24:6127. [PMID: 39338871 PMCID: PMC11435463 DOI: 10.3390/s24186127] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/15/2024] [Revised: 09/11/2024] [Accepted: 09/19/2024] [Indexed: 09/30/2024]
Abstract
The recent advancements in low-dimensional material-based photodetectors have provided valuable insights into the fundamental properties of these materials, the design of their device architectures, and the strategic engineering approaches that have facilitated their remarkable progress. This review work consolidates and provides a comprehensive review of the recent progress in group-10 two-dimensional (2D) palladium diselenide (PdSe2)-based photodetectors. This work first offers a general overview of the various types of PdSe2 photodetectors, including their operating mechanisms and key performance metrics. A detailed examination is then conducted on the physical properties of 2D PdSe2 material and how these metrics, such as structural characteristics, optical anisotropy, carrier mobility, and bandgap, influence photodetector device performance and potential avenues for enhancement. Furthermore, the study delves into the current methods for synthesizing PdSe2 material and constructing the corresponding photodetector devices. The documented device performances and application prospects are thoroughly discussed. Finally, this review speculates on the existing trends and future research opportunities in the field of 2D PdSe2 photodetectors. Potential directions for continued advancement of these optoelectronic devices are proposed and forecasted.
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Affiliation(s)
- Tawsif Ibne Alam
- Shenzhen Research Institute, The Hong Kong Polytechnic University, Shenzhen 518057, China
- Department of Applied Physics, Materials Research Center, Photonics Research Institute and Research Institute for Advanced Manufacturing, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Kunxuan Liu
- Shenzhen Research Institute, The Hong Kong Polytechnic University, Shenzhen 518057, China
- Department of Applied Physics, Materials Research Center, Photonics Research Institute and Research Institute for Advanced Manufacturing, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Sumaiya Umme Hani
- Shenzhen Research Institute, The Hong Kong Polytechnic University, Shenzhen 518057, China
- Department of Applied Physics, Materials Research Center, Photonics Research Institute and Research Institute for Advanced Manufacturing, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Safayet Ahmed
- Department of Physics, Oregon State University, Corvallis, OR 97331, USA
| | - Yuen Hong Tsang
- Shenzhen Research Institute, The Hong Kong Polytechnic University, Shenzhen 518057, China
- Department of Applied Physics, Materials Research Center, Photonics Research Institute and Research Institute for Advanced Manufacturing, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
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3
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Li M, Guan W, Liu C, Xing F, Zheng Y, Di Y, Cao G, Wei S, Wang Y, Yang G, Yu L, Gan Z. Room-Temperature High-Performance Photodetector and Phototransistor Based on PdSe 2/ZnIn 2S 4 Alloy Heterojunctions. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2309499. [PMID: 38624172 DOI: 10.1002/smll.202309499] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/19/2023] [Revised: 03/12/2024] [Indexed: 04/17/2024]
Abstract
Various semiconductor devices have been developed based on 2D heterojunction materials owing to their distinctive optoelectronic properties. However, to achieve efficient charge transfer at their interface remains a major challenge. Herein, an alloy heterojunction concept is proposed. The sulfur vacancies in ZnIn2S4 are filled with selenium atoms of PdSe2. This chemically bonded heterojunction can significantly enhance the separation of photocarriers, providing notable advantages in the field of photoelectric conversion. As a demonstration, a two-terminal photodetector based on the PdSe2/ZnIn2S4 heterojunction materials is fabricated. The photodetector exhibits stable operation in ambient conditions, showcasing superior performance in terms of large photocurrent, high responsivity (48.8 mA W-1) and detectivity (1.98 × 1011 Jones). To further validate the excellent optoelectronic performance of the heterojunction, a tri-terminal phototransistor is also fabricated. Benefiting from gate voltage modulation, the photocurrent is amplified to milliampere level, and the responsivity is increased to 229.14 mA W-1. These findings collectively demonstrate the significant potential of the chemically bonded PdSe2/ZnIn2S4 alloy heterojunction for future optoelectronic applications.
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Affiliation(s)
- Mingchao Li
- Center for Future Optoelectronic Functional Materials, School of Computer and Electronic Information/School of Artificial Intelligence, Nanjing Normal University, Nanjing, 210023, China
| | - Wei Guan
- School of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao, 266042, P. R. China
| | - Cihui Liu
- Center for Future Optoelectronic Functional Materials, School of Computer and Electronic Information/School of Artificial Intelligence, Nanjing Normal University, Nanjing, 210023, China
| | - Fangjian Xing
- Center for Future Optoelectronic Functional Materials, School of Computer and Electronic Information/School of Artificial Intelligence, Nanjing Normal University, Nanjing, 210023, China
| | - Yubin Zheng
- Dalian University of Technology Corporation of Changshu Research Institution, Suzhou, 215500, P. R. China
| | - Yunsong Di
- Center for Future Optoelectronic Functional Materials, School of Computer and Electronic Information/School of Artificial Intelligence, Nanjing Normal University, Nanjing, 210023, China
| | - Guiyuan Cao
- Nanophotonics Research Center, Shenzhen Key Laboratory of Micro-Scale Optical Information Technology, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Shibiao Wei
- Nanophotonics Research Center, Shenzhen Key Laboratory of Micro-Scale Optical Information Technology, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Ying Wang
- School of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao, 266042, P. R. China
| | - Guofeng Yang
- School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, Wuxi, 214122, P. R. China
| | - Liyan Yu
- School of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao, 266042, P. R. China
| | - Zhixing Gan
- Center for Future Optoelectronic Functional Materials, School of Computer and Electronic Information/School of Artificial Intelligence, Nanjing Normal University, Nanjing, 210023, China
- School of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao, 266042, P. R. China
- Dalian University of Technology Corporation of Changshu Research Institution, Suzhou, 215500, P. R. China
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4
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Zhou Y, Yang X, Wang N, Wang X, Wang J, Zhu G, Feng Q. Solution-Processable Large-Area Black Phosphorus/Reduced Graphene Oxide Schottky Junction for High-Temperature Broadband Photodetectors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2401289. [PMID: 38593317 DOI: 10.1002/smll.202401289] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/18/2024] [Revised: 03/27/2024] [Indexed: 04/11/2024]
Abstract
2D materials-based broadband photodetectors have extensive applications in security monitoring and remote sensing fields, especially in supersonic aircraft that require reliable performance under extreme high-temperature conditions. However, the integration of large-area heterostructures with 2D materials often involves high-temperature deposition methods, and also limited options and size of substrates. Herein, a liquid-phase spin-coating method is presented based on the interface engineering to prepare larger-area Van der Waals heterojunctions of black phosphorus (BP)/reduced graphene oxide (RGO) films at room temperature on arbitrary substrates of any required size. Importantly, this method avoids the common requirement of high-temperature, and prevents the curling or stacking in 2D materials during the liquid-phase film formation. The BP/RGO films-based devices exhibit a wide spectral photo-response, ranging from the visible of 532 nm to infrared range of 2200 nm. Additionally, due to Van der Waals interface of Schottky junction, the array devices provide infrared detection at temperatures up to 400 K, with an outstanding photoresponsivity (R) of 12 A W-1 and a specific detectivity (D*) of ≈2.4 × 109 Jones. This work offers an efficient approach to fabricate large-area 2D Schottky junction films by solution-coating for high-temperature infrared photodetectors.
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Affiliation(s)
- Yanan Zhou
- College of Chemistry and Chemical Engineering, Northwestern Polytechnical University, Xi'an, 710072, China
| | - Xue Yang
- College of Chemistry and Chemical Engineering, Northwestern Polytechnical University, Xi'an, 710072, China
| | - Ning Wang
- College of Chemistry and Chemical Engineering, Northwestern Polytechnical University, Xi'an, 710072, China
- Department of Chemical Engineering Faculty of Engineering and the Built Environment, University of Johannesburg, Doornfontein, Johannesburg, 2028, South Africa
| | - Xiaojian Wang
- College of Chemistry and Chemical Engineering, Northwestern Polytechnical University, Xi'an, 710072, China
| | - Jiaxin Wang
- College of Chemistry and Chemical Engineering, Northwestern Polytechnical University, Xi'an, 710072, China
| | - Guangming Zhu
- College of Chemistry and Chemical Engineering, Northwestern Polytechnical University, Xi'an, 710072, China
| | - Qingliang Feng
- College of Chemistry and Chemical Engineering, Northwestern Polytechnical University, Xi'an, 710072, China
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5
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Hlushchenko D, Olszewski J, Martynkien T, Łukomski M, Gemza K, Karasiński P, Zięba M, Baraniecki T, Duda Ł, Bachmatiuk A, Guzik M, Kudrawiec R. Waveguide-Coupled Light Photodetector Based on Two-Dimensional Molybdenum Disulfide. ACS APPLIED MATERIALS & INTERFACES 2024; 16:28874-28885. [PMID: 38795034 PMCID: PMC11163399 DOI: 10.1021/acsami.4c04854] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2024]
Abstract
The integration of transition metal dichalcogenides with photonic structures such as sol-gel SiOx:TiOy optical waveguides (WGs) makes possible the fabrication of photonic devices with the desired characteristics in the visible spectral range. In this study, we propose and experimentally demonstrate a MoS2-based photodetector integrated with a sol-gel SiOx:TiOy WG. Based on the spectroscopic measurements performed for our device, we concluded that the light entering the WG is almost completely channeled out from the WG and absorbed by the MoS2 flake, which is deposited on the WG. Therefore, this device works as a photodetector. The light coupling into the MoS2 region in this device construction is due to the high contrast of refractive index between the van der Waals crystal and the sol-gel WG, which is ∼4 and ∼1.8, respectively. The obtained MoS2-based photodetectors exhibit a photoresponsivity of 0.3 A W-1 (n-type MoS2) and 7.53 mA W-1 (p-type MoS2) at a bias voltage of 2 V. These results reveal great potential in the integration of sol-gel WGs with van der Waals crystals in optoelectronic applications.
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Affiliation(s)
- Daria Hlushchenko
- Łukasiewicz
Research Network-PORT Polish Center for Technology Development, ul. Stabłowicka 147, 54-066 Wrocław, Poland
- Faculty
of Fundamental Problems of Science and Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego
27, 50-370 Wrocław, Poland
| | - Jacek Olszewski
- Faculty
of Fundamental Problems of Science and Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego
27, 50-370 Wrocław, Poland
| | - Tadeusz Martynkien
- Faculty
of Fundamental Problems of Science and Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego
27, 50-370 Wrocław, Poland
| | - Michał Łukomski
- Faculty
of Fundamental Problems of Science and Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego
27, 50-370 Wrocław, Poland
| | - Karolina Gemza
- Faculty
of Fundamental Problems of Science and Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego
27, 50-370 Wrocław, Poland
| | - Pawel Karasiński
- Department
of Optoelectronics, Silesian University
of Technology, ul. B. Krzywoustego 2, 44-100 Gliwice, Poland
| | - Magdalena Zięba
- Department
of Optoelectronics, Silesian University
of Technology, ul. B. Krzywoustego 2, 44-100 Gliwice, Poland
| | - Tomasz Baraniecki
- Łukasiewicz
Research Network-PORT Polish Center for Technology Development, ul. Stabłowicka 147, 54-066 Wrocław, Poland
| | - Łukasz Duda
- Łukasiewicz
Research Network-PORT Polish Center for Technology Development, ul. Stabłowicka 147, 54-066 Wrocław, Poland
- Faculty
of Chemistry, University of Wrocław, ul. F. Joliot-Curie 14, 50-383 Wrocław, Poland
| | - Alicja Bachmatiuk
- Łukasiewicz
Research Network-PORT Polish Center for Technology Development, ul. Stabłowicka 147, 54-066 Wrocław, Poland
| | - Małgorzata Guzik
- Łukasiewicz
Research Network-PORT Polish Center for Technology Development, ul. Stabłowicka 147, 54-066 Wrocław, Poland
- Faculty
of Chemistry, University of Wrocław, ul. F. Joliot-Curie 14, 50-383 Wrocław, Poland
| | - Robert Kudrawiec
- Łukasiewicz
Research Network-PORT Polish Center for Technology Development, ul. Stabłowicka 147, 54-066 Wrocław, Poland
- Faculty
of Fundamental Problems of Science and Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego
27, 50-370 Wrocław, Poland
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6
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Lyu X, Li Y, Li X, Liu X, Xiao J, Xu W, Jiang P, Yang H, Wu C, Hu X, Peng LY, Gong Q, Yang S, Gao Y. Layer-dependent ultrafast carrier dynamics of PdSe 2 investigated by photoemission electron microscopy. NANOSCALE 2024. [PMID: 38656387 DOI: 10.1039/d4nr00281d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/26/2024]
Abstract
For atomically thin two-dimensional materials, variations in layer thickness can result in significant changes in the electronic energy band structure and physicochemical properties, thereby influencing the carrier dynamics and device performance. In this work, we employ time- and energy-resolved photoemission electron microscopy to reveal the ultrafast carrier dynamics of PdSe2 with different layer thicknesses. We find that for few-layer PdSe2 with a semiconductor phase, an ultrafast hot carrier cooling on a timescale of approximately 0.3 ps and an ultrafast defect trapping on a timescale of approximately 1.3 ps are unveiled, followed by a slower decay of approximately tens of picoseconds. However, for bulk PdSe2 with a semimetal phase, only an ultrafast hot carrier cooling and a slower decay of approximately tens of picoseconds are observed, while the contribution of defect trapping is suppressed with the increase of layer number. Theoretical calculations of the electronic energy band structure further confirm the transition from a semiconductor to a semimetal. Our work demonstrates that TR- and ER-PEEM with ultrahigh spatiotemporal resolution and wide-field imaging capability has great advantages in revealing the intricate details of ultrafast carrier dynamics of nanomaterials.
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Affiliation(s)
- Xiaying Lyu
- State Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking University, Beijing 100871, China.
| | - Yaolong Li
- State Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking University, Beijing 100871, China.
| | - Xiaofang Li
- State Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking University, Beijing 100871, China.
| | - Xiulan Liu
- State Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking University, Beijing 100871, China.
| | - Jingying Xiao
- State Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking University, Beijing 100871, China.
| | - Weiting Xu
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China.
| | - Pengzuo Jiang
- State Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking University, Beijing 100871, China.
| | - Hong Yang
- State Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking University, Beijing 100871, China.
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu 226010, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
| | - Chengyin Wu
- State Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking University, Beijing 100871, China.
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu 226010, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
| | - Xiaoyong Hu
- State Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking University, Beijing 100871, China.
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu 226010, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
| | - Liang-You Peng
- State Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking University, Beijing 100871, China.
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu 226010, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
| | - Qihuang Gong
- State Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking University, Beijing 100871, China.
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu 226010, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
| | - Shengxue Yang
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China.
| | - Yunan Gao
- State Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking University, Beijing 100871, China.
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu 226010, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
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7
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Dong C, Lu LS, Lin YC, Robinson JA. Air-Stable, Large-Area 2D Metals and Semiconductors. ACS NANOSCIENCE AU 2024; 4:115-127. [PMID: 38644964 PMCID: PMC11027125 DOI: 10.1021/acsnanoscienceau.3c00047] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/18/2023] [Revised: 12/16/2023] [Accepted: 12/18/2023] [Indexed: 04/23/2024]
Abstract
Two-dimensional (2D) materials are popular for fundamental physics study and technological applications in next-generation electronics, spintronics, and optoelectronic devices due to a wide range of intriguing physical and chemical properties. Recently, the family of 2D metals and 2D semiconductors has been expanding rapidly because they offer properties once unknown to us. One of the challenges to fully access their properties is poor stability in ambient conditions. In the first half of this Review, we briefly summarize common methods of preparing 2D metals and highlight some recent approaches for making air-stable 2D metals. Additionally, we introduce the physicochemical properties of some air-stable 2D metals recently explored. The second half discusses the air stability and oxidation mechanisms of 2D transition metal dichalcogenides and some elemental 2D semiconductors. Their air stability can be enhanced by optimizing growth temperature, substrates, and precursors during 2D material growth to improve material quality, which will be discussed. Other methods, including doping, postgrowth annealing, and encapsulation of insulators that can suppress defects and isolate the encapsulated samples from the ambient environment, will be reviewed.
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Affiliation(s)
- Chengye Dong
- 2-Dimensional
Crystal Consortium, The Pennsylvania State
University, University
Park, Pennsylvania 16802, United States
| | - Li-Syuan Lu
- Department
of Materials Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Yu-Chuan Lin
- Department
of Materials Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department
of Materials Science and Engineering, National
Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
| | - Joshua A. Robinson
- 2-Dimensional
Crystal Consortium, The Pennsylvania State
University, University
Park, Pennsylvania 16802, United States
- Department
of Materials Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
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8
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Bai Q, Huang X, Du S, Guo Y, Li C, Li W, Li J, Gu C. Multiple-polarization-sensitive photodetector Based on a plasmonic metasurface. NANOSCALE 2024. [PMID: 38625084 DOI: 10.1039/d4nr00808a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/17/2024]
Abstract
On-chip polarization-sensitive photodetectors are highly desired for ultra-compact optoelectronic systems. It has been demonstrated that polarization-sensitive photodetection can be realized using intrinsic chiral and anisotropy materials. However, these photodetectors can only realize the detection of either circularly polarized light (CPL) or linear polarized light (LPL) and are not applicable to multiple-polarization-sensitive photodetection. Herein, we experimentally demonstrate a metasurface-integrated semiconductor to realize multiple-polarization-sensitive photodetection at visible wavelengths. This device is composed of a MoSe2 monolayer on an H-shaped plasmonic nanostructure. The geometric chirality and anisotropy of the H-shaped nanostructure result in CPL and LPL resolved optical responses. By integrating a plasmonic metasurface with monolayer MoSe2, we converted polarization-sensitive optical absorption to the polarization-sensitive photocurrent of the device through the photoconductive effect. Polarization-sensitive photocurrent responses to both CPL and LPL are systematically investigated, which demonstrate a high photocurrent circular dichroism (CD) of 0.35 at a wavelength of 810 nm and photocurrent linear polarization (LP) of 0.4 at a wavelength of 633 nm. Our results provide a potential pathway to realize multiple-polarization-sensitive applications in medicine analysis, biology, and remote sensing.
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Affiliation(s)
- Qinghu Bai
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
- School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Xin Huang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
- School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Shuo Du
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
- School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Yang Guo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
- School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Chensheng Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
- School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Wei Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
- School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Junjie Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
- Songshan Lake Materials Laboratory, Dongguan 523808, People's Republic of China
| | - Changzhi Gu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
- School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
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9
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He W, Wu D, Kong L, Yu P, Yang G. Giant Negative Photoresponse in van der Waals Graphene/AgBiP 2Se 6/Graphene Trilayer Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2312541. [PMID: 38252894 DOI: 10.1002/adma.202312541] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/22/2023] [Revised: 01/17/2024] [Indexed: 01/24/2024]
Abstract
The positive photoconductive (PPC) effect is a well-established primary detection mechanism employed by photodetectors. In contrast, the negative photoconductive (NPC) effect is not extensively investigated thus far, and research on the NPC effect is still in its early stage. Herein, a quaternary van der Waals material, AgBiP2Se6 atomic layers, is discovered to achieve a giant NPC effect. Through experimental observations in a Graphene/AgBiP2Se6/ Graphene-based vertical photodetector, an irreversible conversion is identified from common PPC photoresponse to atypical NPC photoresponse. Notably, this device demonstrates an exceptionally high negative responsivity (R) of 4.9 × 105 A W-1, surpassing the previous records for NPC photodetectors. Additionally, it exhibits remarkable optoelectronic performances, including an external quantum efficiency of 1.3 × 108% and a detectivity (D) of 3.60 × 1012 Jones. The exceptionally high NPC photoresponse observed in this device can be attributed to the swift suppression of photogenerated free carriers at robust recombination centers situated at significant depths, induced by the elevated drain-source voltage bias. The remarkably high NPC photoresponse also positions AgBiP2Se6 as a promising 2D material for multifunctional optoelectronic devices and an excellent platform for systematic exploration of the NPC effect.
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Affiliation(s)
- Wei He
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Nanotechnology Research Center, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, P.R. China
| | - Dong Wu
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Nanotechnology Research Center, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, P.R. China
| | - Lingling Kong
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Nanotechnology Research Center, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, P.R. China
| | - Peng Yu
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Nanotechnology Research Center, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, P.R. China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Nanotechnology Research Center, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, P.R. China
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10
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Dang LY, Wei Z, Guo J, Cui TH, Wang Y, Han JC, Wang GG. Efficient Carrier Transport in 2D Bi 2O 2Se/CsBi 3I 10 Perovskite Heterojunction Enables Highly-Sensitive Broadband Photodetection. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2306600. [PMID: 38009782 DOI: 10.1002/smll.202306600] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2023] [Revised: 10/20/2023] [Indexed: 11/29/2023]
Abstract
2D Bi2O2Se has recently garnered significant attention in the electronics and optoelectronics fields due to its remarkable photosensitivity, broad spectral absorption, and excellent long-term environmental stability. However, the development of integrated Bi2O2Se photodetector with high performance and low-power consumption is limited by material synthesis method and the inherent high carrier concentration of Bi2O2Se. Here, a type-I heterojunction is presented, comprising 2D Bi2O2Se and lead-free bismuth perovskite CsBi3I10, for fast response and broadband detection. Through effective charge transfer and strong coupling effect at the interfaces of Bi2O2Se and CsBi3I10, the response time is accelerated to 4.1 µs, and the detection range is expanded from ultraviolet to near-infrared spectral regions (365-1500 nm). The as-fabricated photodetector exhibits a responsivity of 48.63 AW-1 and a detectivity of 1.22×1012 Jones at 808 nm. Moreover, efficient modulation of the dominant photocurrent generation mechanism from photoconductive to photogating effect leads to sensitive response exceeding 103 AW-1 for heterojunction-based photo field effect transistor (photo-FETs). Utilizing the large-scale growth of both Bi2O2Se and CsBi3I10, the as-fabricated integrated photodetector array demonstrates outstanding homogeneity and stability of photo-response performance. The proposed 2D Bi2O2Se/CsBi3I10 perovskite heterojunction holds promising prospects for the future-generation photodetector arrays and integrated optoelectronic systems.
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Affiliation(s)
- Le-Yang Dang
- Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, P. R. China
| | - Zhan Wei
- Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, P. R. China
| | - Jing Guo
- Shenzhen International Graduate School and Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen, 518055, China
| | - Tian-Hao Cui
- Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, P. R. China
| | - Yongjie Wang
- Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, School of Science, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, P. R. China
| | - Jie-Cai Han
- National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, Harbin, 150080, P. R. China
| | - Gui-Gen Wang
- Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, P. R. China
- National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, Harbin, 150080, P. R. China
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11
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Chen Y, Zhu Q, Sun J, Sun Y, Hanagata N, Xu M. A high-performance broadband phototransistor array of a PdSe 2/SOI Schottky junction. NANOSCALE 2024; 16:6078-6086. [PMID: 38441960 DOI: 10.1039/d3nr06643f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/22/2024]
Abstract
There is great interest in the incorporation of novel two-dimensional materials into Si-based technologies to realize multifunctional optoelectronic devices via heterogeneous integration. Here, we demonstrate a gate-tunable, self-driven, high-performance broadband phototransistor array based on a PdSe2/Si Schottky junction, which is fabricated by pre-depositing a semi-metallic PdSe2 film on a SOI substrate. In addition, thanks to the zero bandgap of the PdSe2 material and the PdSe2/Si vertical heterostructure, the prepared phototransistor exhibits pronounced photovoltaic properties in a wide spectral range from ultraviolet to near-infrared. The responsivity, specific detectivity and response time of the device at the incident light wavelength of 808 nm are 1.15 A W-1, 9.39 × 1010 Jones, and 27.1/40.3 μs, respectively, which are better than those of previously reported PdSe2-based photodetectors. The photoelectric performance can be further improved by applying an appropriate gate voltage to the phototransistor and the responsivity of the device increases to 1.61 A W-1 at VG = 5 V. We demonstrate the excellent imaging capabilities of a 4 × 4 array image sensor using PdSe2/SOI phototransistors under 375 nm, 532 nm, and 808 nm laser sources.
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Affiliation(s)
- Yexin Chen
- College of Integrated Circuits, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China.
| | - Qinghai Zhu
- College of Integrated Circuits, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China.
| | - Jiabao Sun
- College of Information Science & Electronic Engineering, Zhejiang University, 38 Zheda Road, Hangzhou 310027, China
| | - Yijun Sun
- College of Information Science & Electronic Engineering, Zhejiang University, 38 Zheda Road, Hangzhou 310027, China
| | - Nobutaka Hanagata
- Research Center for Functional Materials and Nanotechnology Innovation Station, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
| | - Mingsheng Xu
- College of Integrated Circuits, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China.
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12
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Murastov G, Aslam MA, Leitner S, Tkachuk V, Plutnarová I, Pavlica E, Rodriguez RD, Sofer Z, Matković A. Multi-Layer Palladium Diselenide as a Contact Material for Two-Dimensional Tungsten Diselenide Field-Effect Transistors. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:481. [PMID: 38470809 DOI: 10.3390/nano14050481] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/15/2024] [Revised: 02/28/2024] [Accepted: 03/01/2024] [Indexed: 03/14/2024]
Abstract
Tungsten diselenide (WSe2) has emerged as a promising ambipolar semiconductor material for field-effect transistors (FETs) due to its unique electronic properties, including a sizeable band gap, high carrier mobility, and remarkable on-off ratio. However, engineering the contacts to WSe2 remains an issue, and high contact barriers prevent the utilization of the full performance in electronic applications. Furthermore, it could be possible to tune the contacts to WSe2 for effective electron or hole injection and consequently pin the threshold voltage to either conduction or valence band. This would be the way to achieve complementary metal-oxide-semiconductor devices without doping of the channel material.This study investigates the behaviour of two-dimensional WSe2 field-effect transistors with multi-layer palladium diselenide (PdSe2) as a contact material. We demonstrate that PdSe2 contacts favour hole injection while preserving the ambipolar nature of the channel material. This consequently yields high-performance p-type WSe2 devices with PdSe2 van der Waals contacts. Further, we explore the tunability of the contact interface by selective laser alteration of the WSe2 under the contacts, enabling pinning of the threshold voltage to the valence band of WSe2, yielding pure p-type operation of the devices.
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Affiliation(s)
- Gennadiy Murastov
- Department Physics, Mechanics and Electrical Engineering, Montanuniversität Leoben, Franz Josef Strasse 18, 8700 Leoben, Austria
| | - Muhammad Awais Aslam
- Department Physics, Mechanics and Electrical Engineering, Montanuniversität Leoben, Franz Josef Strasse 18, 8700 Leoben, Austria
| | - Simon Leitner
- Department Physics, Mechanics and Electrical Engineering, Montanuniversität Leoben, Franz Josef Strasse 18, 8700 Leoben, Austria
| | - Vadym Tkachuk
- Laboratory of Organic Matter Physics, University of Nova Gorica, Vipavska 13, SI-5000 Nova Gorica, Slovenia
| | - Iva Plutnarová
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague, Czech Republic
| | - Egon Pavlica
- Laboratory of Organic Matter Physics, University of Nova Gorica, Vipavska 13, SI-5000 Nova Gorica, Slovenia
| | - Raul D Rodriguez
- Research School of Chemistry & Applied Biomedical Sciences, Tomsk Polytechnic University, Lenina ave. 30, 634034 Tomsk, Russia
| | - Zdenek Sofer
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague, Czech Republic
| | - Aleksandar Matković
- Department Physics, Mechanics and Electrical Engineering, Montanuniversität Leoben, Franz Josef Strasse 18, 8700 Leoben, Austria
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13
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Xu T, Qi L, Xu Y, Xiao S, Yuan Q, Niu R, Wang J, Tsang HK, Liu T, Cheng Z. Giant optical absorption of a PtSe 2-on-silicon waveguide in mid-infrared wavelengths. NANOSCALE 2024; 16:3448-3453. [PMID: 38189416 DOI: 10.1039/d3nr05983a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/09/2024]
Abstract
Low-dimensional platinum diselenide (PtSe2) is a promising candidate for high-performance optoelectronics in the short-wavelength mid-infrared band due to its high carrier mobility, excellent stability, and tunable bandgap. However, light usually interacts moderately with low-dimensional PtSe2, limiting the optoelectronic responses of PtSe2-based devices. Here we demonstrated a giant optical absorption of a PtSe2-on-silicon waveguide by integrating a ten-layer PtSe2 film on an ultra-thin silicon waveguide. The weak mode confinement in the ultra-thin waveguide dramatically increases the waveguide mode overlap with the PtSe2 film. Our experimental results show that the absorption coefficient of the PtSe2-on-silicon waveguide is in the range of 0.0648 dB μm-1 to 0.0704 dB μm-1 in a spectral region of 2200 nm to 2300 nm wavelengths. Furthermore, we also studied the optical absorption in an ultra-thin silicon microring resonator. Our study provides a promising approach to developing PtSe2-on-silicon hybrid optoelectronic integrated circuits.
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Affiliation(s)
- Tianping Xu
- School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China.
- Key Laboratory of Optoelectronics Information Technology, Ministry of Education, Tianjin 300072, China
| | - Liqiang Qi
- School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China.
- Key Laboratory of Optoelectronics Information Technology, Ministry of Education, Tianjin 300072, China
| | - Yingqi Xu
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
| | - Shuqi Xiao
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, Hong Kong.
| | - Quan Yuan
- School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China.
| | - Rui Niu
- School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China.
| | - Jiaqi Wang
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
| | - Hon Ki Tsang
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, Hong Kong.
| | - Tiegen Liu
- School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China.
- Key Laboratory of Optoelectronics Information Technology, Ministry of Education, Tianjin 300072, China
| | - Zhenzhou Cheng
- School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China.
- Key Laboratory of Optoelectronics Information Technology, Ministry of Education, Tianjin 300072, China
- Georgia Tech Shenzhen Institute, Tianjin University, Shenzhen 518055, China
- School of Physics and Electronic Engineering, Xinjiang Normal University, Urumqi, Xinjiang 830054, China
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14
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Ma H, Fang H, Xie X, Liu Y, Tian H, Chai Y. Optoelectronic Synapses Based on MXene/Violet Phosphorus van der Waals Heterojunctions for Visual-Olfactory Crossmodal Perception. NANO-MICRO LETTERS 2024; 16:104. [PMID: 38300424 PMCID: PMC10834395 DOI: 10.1007/s40820-024-01330-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/20/2023] [Accepted: 12/11/2023] [Indexed: 02/02/2024]
Abstract
The crossmodal interaction of different senses, which is an important basis for learning and memory in the human brain, is highly desired to be mimicked at the device level for developing neuromorphic crossmodal perception, but related researches are scarce. Here, we demonstrate an optoelectronic synapse for vision-olfactory crossmodal perception based on MXene/violet phosphorus (VP) van der Waals heterojunctions. Benefiting from the efficient separation and transport of photogenerated carriers facilitated by conductive MXene, the photoelectric responsivity of VP is dramatically enhanced by 7 orders of magnitude, reaching up to 7.7 A W-1. Excited by ultraviolet light, multiple synaptic functions, including excitatory postsynaptic currents, paired-pulse facilitation, short/long-term plasticity and "learning-experience" behavior, were demonstrated with a low power consumption. Furthermore, the proposed optoelectronic synapse exhibits distinct synaptic behaviors in different gas environments, enabling it to simulate the interaction of visual and olfactory information for crossmodal perception. This work demonstrates the great potential of VP in optoelectronics and provides a promising platform for applications such as virtual reality and neurorobotics.
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Affiliation(s)
- Hailong Ma
- Center for Advancing Materials Performance From the Nanoscale (CAMP-Nano), State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China
| | - Huajing Fang
- Center for Advancing Materials Performance From the Nanoscale (CAMP-Nano), State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China.
| | - Xinxing Xie
- Center for Advancing Materials Performance From the Nanoscale (CAMP-Nano), State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China
| | - Yanming Liu
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, People's Republic of China
| | - He Tian
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, People's Republic of China.
| | - Yang Chai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, People's Republic of China.
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15
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Lian L, Zhang Q, Li W, Wang B, Liang Q. A shadow enabled non-invasive probe for multi-feature intelligent liquid surveillance system. NANOSCALE 2024; 16:1176-1187. [PMID: 38111989 DOI: 10.1039/d3nr04983c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/20/2023]
Abstract
Liquid detection probes used to identify the features of liquids show great promise in a variety of important applications. However, some challenges, such as sample contamination by direct contact with the liquid, the requirement of additional signal emitters, and complex fabrication, hindered the development of liquid detection probes. Here, we developed a non-invasive shadow probe (SP) for a multi-feature intelligent liquid surveillance system (ILSS). The self-powered SP with the working mechanism of the shadow effect can detect the features of liquids by analyzing the variations of liquid shadows such as the area, wavelength, and brightness. The exact resolution (5 different colors, 6 different concentrations, 6 different levels, 100% accuracy) and fast response time (0.2 ms) are shown by the SP under ambient light conditions (even in 0.003 sun). The ILSS, which integrated the SPs with signal processing circuits and applied the artificial intelligence (AI) technique, successfully detects and synoptically learns about liquids simultaneously. The in-real time ILSS reaches a test accuracy of 99.3% for 10 types of liquids with multiple features. This work showcases a promising solution for non-invasive multi-feature liquid detection, displaying great potential for future applications.
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Affiliation(s)
- Lizhen Lian
- School of Materials, Shenzhen Campus of Sun Yat-sen University, No. 66, Gongchang Road, Guangming District, Shenzhen 518107, China.
- Songshan Lake Materials Laboratory, Songshan Lake Mat Lab, Dongguan 523808, China.
- School of Physics and Materials Science, Guangzhou University, No. 230, University Town Waihuan West Road, Guangzhou 510006, China.
| | - Qian Zhang
- School of Materials, Shenzhen Campus of Sun Yat-sen University, No. 66, Gongchang Road, Guangming District, Shenzhen 518107, China.
| | - Wenbo Li
- Songshan Lake Materials Laboratory, Songshan Lake Mat Lab, Dongguan 523808, China.
| | - Bin Wang
- School of Physics and Materials Science, Guangzhou University, No. 230, University Town Waihuan West Road, Guangzhou 510006, China.
| | - Qijie Liang
- Songshan Lake Materials Laboratory, Songshan Lake Mat Lab, Dongguan 523808, China.
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16
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Jiang J, Xu W, Sun Z, Fu L, Zhang S, Qin B, Fan T, Li G, Chen S, Yang S, Ge W, Shen B, Tang N. Wavelength-Controlled Photoconductance Polarity Switching via Harnessing Defects in Doped PdSe 2 for Artificial Synaptic Features. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2306068. [PMID: 37963834 DOI: 10.1002/smll.202306068] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/19/2023] [Revised: 10/23/2023] [Indexed: 11/16/2023]
Abstract
Optoelectronic synapses are currently drawing significant attention as fundamental building blocks of neuromorphic computing to mimic brain functions. In this study, a two-terminal synaptic device based on a doped PdSe2 flake is proposed to imitate the key neural functions in an optical pathway. Due to the wavelength-dependent desorption of oxygen clusters near the intrinsic selenide vacancy defects, the doped PdSe2 photodetector achieves a high negative photoresponsivity of -7.8 × 103 A W-1 at 473 nm and a positive photoresponsivity of 181 A W-1 at 1064 nm. This wavelength-selective bi-direction photoresponse endows an all-optical pathway to imitate the fundamental functions of artificial synapses on a device level, such as psychological learning and forgetting capability, as well as dynamic logic functions. The underpinning photoresponse is further demonstrated on a flexible platform, providing a viable technology for neuromorphic computing in wearable electronics. Furthermore, the p-type doping results in an effective increase of the channel's electrical conductivity and a significant reduction in power consumption. Such low-power-consuming optical synapses with simple device architecture and low-dimensional features demonstrate tremendous promise for building multifunctional artificial neuromorphic systems in the future.
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Affiliation(s)
- Jiayang Jiang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Weiting Xu
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Zhenhao Sun
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Lei Fu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Shixiong Zhang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Biao Qin
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Teng Fan
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Guoping Li
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Shuaiyu Chen
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Shengxue Yang
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Weikun Ge
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Bo Shen
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu, 226010, China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China
| | - Ning Tang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu, 226010, China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China
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17
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Chen H, Kuklin A, Xiao J, Al-Hartomy OA, Al-Ghamdi A, Wageh S, Zhang Y, Ågren H, Gao L, Zhang H. Direct Observation of Photon Induced Giant Band Renormalization in 2D PdSe 2 Dichalcogenide by Transient Absorption Spectroscopy. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2302760. [PMID: 37469206 DOI: 10.1002/smll.202302760] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/02/2023] [Revised: 06/18/2023] [Indexed: 07/21/2023]
Abstract
Insight into fundamental light-matter interaction as well as underlying photo-physical processes is crucial for the development of novel optoelectronic devices. Palladium diselenide (PdSe2 ), an important representative of emerging 2D noble metal dichalcogenides, has gain considerable attention owing to its unique optical, physical, and chemical properties. In this study, 2D PdSe2 nanosheets (NSs) are prepared using the liquid-phase exfoliation method. A broadband carrier relaxation dynamics from visible to near-infrared bands are revealed using a time-resolved transient absorption spectrometer, giving results that indicate band filling and bandgap renormalization (BGR) effects in the 2D PdSe2 NSs. The observed blue-shift of the transient absorption spectra at the primary stage and the subsequent red-shift can be ascribed to this BGR effect. These findings reveal the many-body character of the 2D TMDs material and may hold keys for applications in the field of optoelectronics and ultrafast photonics.
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Affiliation(s)
- Hualong Chen
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, China
| | - Artem Kuklin
- Department of Physics and Astronomy, Uppsala University, Uppsala, SE-75120, Sweden
| | - Jing Xiao
- College of Physics and Electronic Engineering, Taishan University, Taian, 271000, China
| | - Omar A Al-Hartomy
- Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah, 21589, Saudi Arabia
| | - Ahmed Al-Ghamdi
- Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah, 21589, Saudi Arabia
| | - Swelm Wageh
- Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah, 21589, Saudi Arabia
| | - Yule Zhang
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, China
| | - Hans Ågren
- Department of Physics and Astronomy, Uppsala University, Uppsala, SE-75120, Sweden
| | - Lingfeng Gao
- College of Material Chemistry and Chemical Engineering, Key Laboratory of Organosilicon Chemistry and Material Technology, Ministry of Education, Key Laboratory of Organosilicon Material Technology, Hangzhou Normal University, Hangzhou, 311121, China
| | - Han Zhang
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, China
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18
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Jiang J, Xu W, Guo F, Yang S, Ge W, Shen B, Tang N. Polarization-Resolved Near-Infrared PdSe 2 p-i-n Homojunction Photodetector. NANO LETTERS 2023; 23:9522-9528. [PMID: 37823381 DOI: 10.1021/acs.nanolett.3c03086] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/13/2023]
Abstract
Constructing high-quality homojunctions plays a pivotal role for the advancement of two-dimensional transition metal sulfide (TMDC) based optoelectronic devices. Here, a lateral PdSe2 p-i-n homojunction is constructed by electrostatic doping. Electrical measurements reveal that the homojunction diode exhibits a strong rectifying characteristic with a rectification ratio exceeding 104 and an ideality factor approaching 1. When functioning in photovoltaic mode, the device achieves a high responsivity of 1.1 A/W under 1064 nm illumination, with a specific detectivity of 1.3 × 1011 Jones and a high linearity of 45 dB. Benefiting from the lateral p-i-n structure, the junction capacitance is significantly reduced, and an ultrafast response (3/6 μs) is obtained. Additionally, the photodiode has the capability of polarization distinction due to the unique in-plane anisotropic structure of PdSe2, exhibiting a dichroic ratio of 1.6 at a 1064 nm wavelength. This high-performance polarization-sensitive near-infrared photodetector exhibits great potential in the next-generation optoelectronic applications.
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Affiliation(s)
- Jiayang Jiang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Weiting Xu
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Fuqiang Guo
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Shengxue Yang
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Weikun Ge
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Bo Shen
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong 226010, Jiangsu, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
| | - Ning Tang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong 226010, Jiangsu, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
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19
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Alijani H, Reineck P, Komljenovic R, Russo SP, Low MX, Balendhran S, Crozier KB, Walia S, Nash GR, Yeo LY, Rezk AR. The Acoustophotoelectric Effect: Efficient Phonon-Photon-Electron Coupling in Zero-Voltage-Biased 2D SnS 2 for Broad-Band Photodetection. ACS NANO 2023; 17:19254-19264. [PMID: 37755696 DOI: 10.1021/acsnano.3c06075] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/28/2023]
Abstract
Two-dimensional (2D) layered metal dichalcogenides constitute a promising class of materials for photodetector applications due to their excellent optoelectronic properties. The most common photodetectors, which work on the principle of photoconductive or photovoltaic effects, however, require either the application of external voltage biases or built-in electric fields, which makes it challenging to simultaneously achieve high responsivities across broad-band wavelength excitation─especially beyond the material's nominal band gap─while producing low dark currents. In this work, we report the discovery of an intricate phonon-photon-electron coupling─which we term the acoustophotoelectric effect─in SnS2 that facilitates efficient photodetection through the application of 100 MHz order propagating surface acoustic waves (SAWs). This effect not only reduces the band gap of SnS2 but also provides the requisite momentum for indirect band gap transition of the photoexcited charge carriers, to enable broad-band photodetection beyond the visible light range, while maintaining pA-order dark currents─ without the need for any external voltage bias. More specifically, we show in the infrared excitation range that it is possible to achieve up to 8 orders of magnitude improvement in the material's photoresponsivity compared to that previously reported for SnS2-based photodetectors, in addition to exhibiting superior performance compared to most other 2D materials reported to date for photodetection.
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Affiliation(s)
- Hossein Alijani
- Micro/Nanophysics Research Laboratory, RMIT University, Melbourne, Victoria 3001, Australia
| | - Philipp Reineck
- ARC Centre of Excellence for Nanoscale BioPhotonics, School of Science, RMIT University, Melbourne, Victoria 3001, Australia
| | - Robert Komljenovic
- Micro/Nanophysics Research Laboratory, RMIT University, Melbourne, Victoria 3001, Australia
| | - Salvy P Russo
- ARC Centre of Excellence in Exciton Science, School of Science, RMIT University, Melbourne, Victoria 3001, Australia
| | - Mei Xian Low
- School of Engineering, RMIT University, Melbourne, Victoria 3001, Australia
| | | | - Kenneth B Crozier
- School of Physics, The University of Melbourne, Parkville, Victoria 3010, Australia
- Department of Electrical and Electronic Engineering, The University of Melbourne, Parkville, Victoria 3010, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, The University of Melbourne, Parkville, Victoria 3010, Australia
| | - Sumeet Walia
- School of Engineering, RMIT University, Melbourne, Victoria 3001, Australia
| | - Geoff R Nash
- Natural Sciences, Faculty of Environment, Science and Economy, University of Exeter, Exeter EX4 4QF, United Kingdom
| | - Leslie Y Yeo
- Micro/Nanophysics Research Laboratory, RMIT University, Melbourne, Victoria 3001, Australia
| | - Amgad R Rezk
- Micro/Nanophysics Research Laboratory, RMIT University, Melbourne, Victoria 3001, Australia
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20
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Li G, Zhang X, Wang Y, Bai Z, Zhao H, He J, He D. Ultrafast transient absorption measurements of photocarrier dynamics in PdSe 2. NANOSCALE 2023; 15:14994-14999. [PMID: 37664909 DOI: 10.1039/d3nr03173j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/05/2023]
Abstract
We investigate the photocarrier dynamics in bulk PdSe2, a layered transition metal dichalcogenide with a novel pentagonal structure and unique electronic and optical properties. Using femtosecond transient absorption microscopy, we study the behavior of photocarriers in mechanically exfoliated bulk PdSe2 flakes at room temperature. By employing a 400 nm ultrafast laser pulse, electron-hole pairs are generated, and their dynamics are probed using an 800 nm detection pulse. Our findings reveal that the lifetime of photocarriers in bulk PdSe2 is approximately 210 ps. Furthermore, by spatially resolving the differential reflection signal, we determine a photocarrier diffusion coefficient of about 7.3 cm2 s-1. Based on these results, we estimate a diffusion length of around 400 nm and a photocarrier mobility of approximately 300 cm2 V-1 s-1. These results shed light on the ultrafast optoelectronic properties of PdSe2, offer valuable insights into photocarriers in this emerging material, and enable design of high-performance optoelectronic devices based on PdSe2.
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Affiliation(s)
- Guili Li
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China.
| | - Xiaoxian Zhang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China.
| | - Yongsheng Wang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China.
| | - Zhiying Bai
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China.
| | - Hui Zhao
- Department of Physics and Astronomy, The University of Kansas, Lawrence, Kansas 66045, USA.
| | - Jiaqi He
- College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing 100029, China.
| | - Dawei He
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China.
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21
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Lu J, He Y, Ma C, Ye Q, Yi H, Zheng Z, Yao J, Yang G. Ultrabroadband Imaging Based on Wafer-Scale Tellurene. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211562. [PMID: 36893428 DOI: 10.1002/adma.202211562] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/10/2022] [Revised: 03/02/2023] [Indexed: 05/19/2023]
Abstract
High-resolution imaging is at the heart of the revolutionary breakthroughs of intelligent technologies, and it is established as an important approach toward high-sensitivity information extraction/storage. However, due to the incompatibility between non-silicon optoelectronic materials and traditional integrated circuits as well as the lack of competent photosensitive semiconductors in the infrared region, the development of ultrabroadband imaging is severely impeded. Herein, the monolithic integration of wafer-scale tellurene photoelectric functional units by exploiting room-temperature pulsed-laser deposition is realized. Taking advantage of the surface plasmon polaritons of tellurene, which results in the thermal perturbation promoted exciton separation, in situ formation of out-of-plane homojunction and negative expansion promoted carrier transport, as well as the band bending promoted electron-hole pair separation enabled by the unique interconnected nanostrip morphology, the tellurene photodetectors demonstrate wide-spectrum photoresponse from 370.6 to 2240 nm and unprecedented photosensitivity with the optimized responsivity, external quantum efficiency and detectivity of 2.7 × 107 A W-1 , 8.2 × 109 % and 4.5 × 1015 Jones. An ultrabroadband imager is demonstrated and high-resolution photoelectric imaging is realized. The proof-of-concept wafer-scale tellurene-based ultrabroadband photoelectric imaging system depicts a fascinating paradigm for the development of an advanced 2D imaging platform toward next-generation intelligent equipment.
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Affiliation(s)
- Jianting Lu
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Yan He
- College of Science, Guangdong University of Petrochemical Technology, Maoming, Guangdong, 525000, P. R. China
| | - Churong Ma
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Institute of Photonics Technology, Jinan University, Guangzhou, 511443, P. R. China
| | - Qiaojue Ye
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Huaxin Yi
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Zhaoqiang Zheng
- School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
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22
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Xiao F, Lei W, Wang W, Ma Y, Gong X, Ming X. Layer-dependent electronic structures and optical properties of two-dimensional PdSSe. Phys Chem Chem Phys 2023; 25:11827-11838. [PMID: 37067819 DOI: 10.1039/d3cp00022b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/18/2023]
Abstract
Two-dimensional (2D) layered palladium dichalcogenides PdX2 (X = S and Se) have attracted increasing interest due to their tunable electronic structure and abundant physicochemical properties. Recently, as the sister material of PdX2, PdSSe has received increasing attention and shows great promise for technological applications and fundamental research. In the present study, we focus on the layer-dependent geometry, electronic structure, and optical properties of PdSSe using first-principles calculations. The lattice shrinkage effect present in the 2D structure is suppressed with increasing number of layers. Attributed to the strong interlayer coupling interactions, the band gap decreases from 2.30 to 0.83 eV with increased thickness. Particularly, the dispersion of the band edges on the high symmetry path changes considerably from the monolayer to bilayer PdSSe, resulting in shifts of the conduction band minimum and valence band maximum. The multilayer PdSSe shows band convergence feature with multi-valley for the conduction band, which are maintained with reduced effective mass. Furthermore, the increasing number of layers drives a wider absorption range in the visible light region, and the light absorption capability increases from ∼10% to ∼30%. Meanwhile, the band edge positions of the multilayer PdSSe are more appropriate for photocatalytic water splitting. Our theoretical study reveals the enhanced valley convergence, conductivity and optical absorption performance of the few-layer PdSSe, which suggests its promising application in thermoelectric conversion, solar harvesting and photocatalysis.
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Affiliation(s)
- Feng Xiao
- College of Science, Guilin University of Technology, Guilin 541004, P. R. China.
- School of Physics, Sun Yat-Sen University, Guangzhou, 510275, P. R. China
| | - Wen Lei
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, P. R. China
| | - Wei Wang
- School of Materials Science and Engineering, Beihang University, Beijing 100191, P. R. China
| | - Yiping Ma
- College of Science, Guilin University of Technology, Guilin 541004, P. R. China.
| | - Xujia Gong
- College of Science, Guilin University of Technology, Guilin 541004, P. R. China.
| | - Xing Ming
- College of Science, Guilin University of Technology, Guilin 541004, P. R. China.
- MOE Key Laboratory of New Processing Technology for Nonferrous Metal and Materials, Key Laboratory of Low-dimensional Structural Physics and Application, Education Department of Guangxi Zhuang Autonomous Region, Guilin University of Technology, Guilin 541004, P. R. China
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23
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Ahmad W, Wu J, Zhuang Q, Neogi A, Wang Z. Research Process on Photodetectors based on Group-10 Transition Metal Dichalcogenides. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2207641. [PMID: 36658722 DOI: 10.1002/smll.202207641] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/07/2022] [Revised: 01/01/2023] [Indexed: 06/17/2023]
Abstract
Rapidly evolving group-10 transition metal dichalcogenides (TMDCs) offer remarkable electronic, optical, and mechanical properties, making them promising candidates for advanced optoelectronic applications. Compared to most TMDCs semiconductors, group-10-TMDCs possess unique structures, narrow bandgap, and influential physical properties that motivate the development of broadband photodetectors, specifically infrared photodetectors. This review presents the latest developments in the fabrication of broadband photodetectors based on conventional 2D TMDCs. It mainly focuses on the recent developments in group-10 TMDCs from the perspective of the lattice structure and synthesis techniques. Recent progress in group-10 TMDCs and their heterostructures with different dimensionality of materials-based broadband photodetectors is provided. Moreover, this review accounts for the latest applications of group-10 TMDCs in the fields of nanoelectronics and optoelectronics. Finally, conclusions and outlooks are summarized to provide perspectives for next-generation broadband photodetectors based on group-10 TMDCs.
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Affiliation(s)
- Waqas Ahmad
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Jiang Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Qiandong Zhuang
- Physics Department, Lancaster University, Lancaster, LA14YB, UK
| | - Arup Neogi
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Zhiming Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China
- Institute for Advanced Study, Chengdu University, Chengdu, 610106, China
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24
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He W, Kong L, Yu P, Yang G. Record-High Work-Function p-Type CuBiP 2 Se 6 Atomic Layers for High-Photoresponse van der Waals Vertical Heterostructure Phototransistor. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209995. [PMID: 36640444 DOI: 10.1002/adma.202209995] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/28/2022] [Revised: 01/04/2023] [Indexed: 06/17/2023]
Abstract
The notable lack of intrinsic p-type 2D layered semiconductors has hindered the engineering of 2D devices for complementary metal oxide semiconductors (CMOSs). Herein, a novel quaternary intrinsic p-type 2D semiconductor, CuBiP2 Se6 atomic layers, is introduced into the 2D family. The semiconductor displays a high work function of 5.26 eV, a moderate hole mobility of 1.72 cm2 V-1 s-1 , and an ultrahigh on/off current exceeding 106 at room temperature. To date, 5.26 eV is the highest work-function recorded in p-type 2D materials, indicating the ultrastable p-type behavior of CuBiP2 Se6 . Additionally, a multilayer graphene/CuBiP2 Se6 /multilayer graphene (MLG/CBPS/MLG)-based fully vertical van der Waals heterostructure phototransistor is designed and fabricated. This device exhibits outstanding optoelectronic performance with a responsivity (R) of 4.9 × 104 A W-1 , an external quantum efficiency (EQE) of 1.5 × 107 %, a detectivity (D) of 1.14 × 1013 Jones, and a broad working wavelength (400-1100 nm), respectively. This is comparable to state-of-the-art 2D devices. Such excellent performance is attributed to the ultrashort transmit length and nondestructive/defect-free contacts. This leads to faster response speed and eliminates Fermi-level pinning effects. Moreover, ultrahigh responsivity and detectivity endow the device with applaudable imaging sensing capability. These results make CuBiP2 Se6 an ideal p-type candidate material for next-generation CMOSs logic devices.
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Affiliation(s)
- Wei He
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Nanotechnology Research Center, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Lingling Kong
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Nanotechnology Research Center, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Peng Yu
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Nanotechnology Research Center, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Nanotechnology Research Center, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou, 510275, P. R. China
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25
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Hu Z, Yang N, Feng Y, Xu L, Hu C, Liu H, Tian S, Yang J. Synthesis of unconventional Pd-Se nanoparticles for phase-dependent ethanol electrooxidation. Chem Commun (Camb) 2023; 59:4020-4023. [PMID: 36917447 DOI: 10.1039/d2cc06785d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/08/2023]
Abstract
By tuning the amount of the Se precursors during the synthesis, orthorhombic PdSe2, cubic Pd17Se15, and monoclinic Pd7Se2 nanoparticles are synthesized, which show phase-dependent electrocatalysis for the ethanol oxidation reaction. This work advances the controllable synthesis of transition metal selenides and inspires their applications in electrocatalysis.
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Affiliation(s)
- Zhenya Hu
- State Key Laboratory of Multiphase Complex Systems, Institute of Process Engineering, Chinese Academy of Sciences, Beijing, 100190, China. .,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Niuwa Yang
- State Key Laboratory of Multiphase Complex Systems, Institute of Process Engineering, Chinese Academy of Sciences, Beijing, 100190, China. .,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yongjun Feng
- State Key Laboratory of Chemical Resource Engineering, Beijing Engineering Center for Hierarchical Catalysts, College of Chemistry, Beijing University of Chemical Technology, No. 15 Beisanhuan East Road, Beijing, 100029, China
| | - Lin Xu
- School of Chemistry and Materials Science, Jiangsu Key Laboratory of New Power Batteries, Jiangsu Collaborative Innovation Centre of Biomedical Functional Materials, Nanjing Normal University, Nanjing, 210023, P. R. China
| | - Chaoquan Hu
- State Key Laboratory of Multiphase Complex Systems, Institute of Process Engineering, Chinese Academy of Sciences, Beijing, 100190, China. .,Nanjing IPE Institute of Green Manufacturing Industry, Nanjing, 211100, Jiangsu, China
| | - Hui Liu
- State Key Laboratory of Multiphase Complex Systems, Institute of Process Engineering, Chinese Academy of Sciences, Beijing, 100190, China. .,Nanjing IPE Institute of Green Manufacturing Industry, Nanjing, 211100, Jiangsu, China
| | - Shaonan Tian
- State Key Laboratory of Multiphase Complex Systems, Institute of Process Engineering, Chinese Academy of Sciences, Beijing, 100190, China.
| | - Jun Yang
- State Key Laboratory of Multiphase Complex Systems, Institute of Process Engineering, Chinese Academy of Sciences, Beijing, 100190, China. .,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.,Nanjing IPE Institute of Green Manufacturing Industry, Nanjing, 211100, Jiangsu, China
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26
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Elbanna A, Jiang H, Fu Q, Zhu JF, Liu Y, Zhao M, Liu D, Lai S, Chua XW, Pan J, Shen ZX, Wu L, Liu Z, Qiu CW, Teng J. 2D Material Infrared Photonics and Plasmonics. ACS NANO 2023; 17:4134-4179. [PMID: 36821785 DOI: 10.1021/acsnano.2c10705] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Two-dimensional (2D) materials including graphene, transition metal dichalcogenides, black phosphorus, MXenes, and semimetals have attracted extensive and widespread interest over the past years for their many intriguing properties and phenomena, underlying physics, and great potential for applications. The vast library of 2D materials and their heterostructures provides a diverse range of electrical, photonic, mechanical, and chemical properties with boundless opportunities for photonics and plasmonic devices. The infrared (IR) regime, with wavelengths across 0.78 μm to 1000 μm, has particular technological significance in industrial, military, commercial, and medical settings while facing challenges especially in the limit of materials. Here, we present a comprehensive review of the varied approaches taken to leverage the properties of the 2D materials for IR applications in photodetection and sensing, light emission and modulation, surface plasmon and phonon polaritons, non-linear optics, and Smith-Purcell radiation, among others. The strategies examined include the growth and processing of 2D materials, the use of various 2D materials like semiconductors, semimetals, Weyl-semimetals and 2D heterostructures or mixed-dimensional hybrid structures, and the engineering of light-matter interactions through nanophotonics, metasurfaces, and 2D polaritons. Finally, we give an outlook on the challenges in realizing high-performance and ambient-stable devices and the prospects for future research and large-scale commercial applications.
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Affiliation(s)
- Ahmed Elbanna
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 637371, Singapore
| | - Hao Jiang
- Department of Electrical and Electronic Engineering, National University of Singapore, Singapore 117583, Singapore
| | - Qundong Fu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
- CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, Singapore 637553, Singapore
| | - Juan-Feng Zhu
- Science, Mathematics and Technology (SMT), Singapore University of Technology and Design, 8 Somapah Road, Singapore 487372, Singapore
| | - Yuanda Liu
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Meng Zhao
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Dongjue Liu
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Samuel Lai
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Xian Wei Chua
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Jisheng Pan
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Ze Xiang Shen
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 637371, Singapore
- Interdisciplinary Graduate Program, Energy Research Institute@NTU, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
- The Photonics Institute and Center for Disruptive Photonic Technologies, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 Singapore
| | - Lin Wu
- Science, Mathematics and Technology (SMT), Singapore University of Technology and Design, 8 Somapah Road, Singapore 487372, Singapore
- Institute of High Performance Computing, Agency for Science Technology and Research (A*STAR), 1 Fusionopolis Way, Singapore 138632, Singapore
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
- CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, Singapore 637553, Singapore
| | - Cheng-Wei Qiu
- Department of Electrical and Electronic Engineering, National University of Singapore, Singapore 117583, Singapore
| | - Jinghua Teng
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
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27
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Hei J, Li X, Wu S, Lin P, Shi Z, Tian Y, Li X, Zeng L, Yu X, Wu D. Wafer-Scale Patterning Synthesis of Two-Dimensional WSe 2 Layers by Direct Selenization for Highly Sensitive van der Waals Heterojunction Broadband Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2023; 15:12052-12060. [PMID: 36848604 DOI: 10.1021/acsami.2c22409] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Two-dimensional (2D) transition-metal dichalcogenides (TMDs) exhibit promising potential in fabricating highly sensitive photodetectors due to their unique electrical and optoelectrical characteristics. However, micron-sized 2D materials produced by conventional chemical vapor deposition (CVD) and mechanical exfoliation methods fail to satisfy the demands for applications in integrated optoelectronics and systems given their poor controllability and repeatability. Here, we propose a simple selenization approach to grow wafer-scale (2 in.) 2D p-WSe2 layers with high uniformity and customized patterns. Furthermore, a self-driven broadband photodetector with a p-WSe2/n-Si van der Waals heterojunction has been in situ fabricated with a satisfactory responsivity of 689.8 mA/W and a large specific detectivity of 1.59 × 1013 Jones covering from ultraviolet to short-wave infrared. In addition, a remarkable nanosecond response speed has been recorded under 0.5% duty cycle of the input light. The proposed selenization approach on the growth of 2D WSe2 layers demonstrates an effective route to fabricate highly sensitive broadband photodetectors used for integrated optoelectronic systems.
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Affiliation(s)
- Jinjin Hei
- School of Physics and Microelectronics, and Key Laboratory of Material Physics, Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China
| | - Xue Li
- School of Physics and Microelectronics, and Key Laboratory of Material Physics, Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China
| | - Shuoen Wu
- Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, California 92093, United States
| | - Pei Lin
- School of Physics and Microelectronics, and Key Laboratory of Material Physics, Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China
| | - Zhifeng Shi
- School of Physics and Microelectronics, and Key Laboratory of Material Physics, Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China
| | - Yongtao Tian
- School of Physics and Microelectronics, and Key Laboratory of Material Physics, Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China
| | - Xinjian Li
- School of Physics and Microelectronics, and Key Laboratory of Material Physics, Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China
| | - Longhui Zeng
- Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, California 92093, United States
| | - Xuechao Yu
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
| | - Di Wu
- School of Physics and Microelectronics, and Key Laboratory of Material Physics, Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China
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28
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Jia L, Wu J, Zhang Y, Qu Y, Jia B, Moss DJ. Third-Order Optical Nonlinearities of 2D Materials at Telecommunications Wavelengths. MICROMACHINES 2023; 14:307. [PMID: 36838007 PMCID: PMC9962682 DOI: 10.3390/mi14020307] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/25/2022] [Revised: 01/14/2023] [Accepted: 01/14/2023] [Indexed: 06/18/2023]
Abstract
All-optical signal processing based on nonlinear optical devices is promising for ultrafast information processing in optical communication systems. Recent advances in two-dimensional (2D) layered materials with unique structures and distinctive properties have opened up new avenues for nonlinear optics and the fabrication of related devices with high performance. This paper reviews the recent advances in research on third-order optical nonlinearities of 2D materials, focusing on all-optical processing applications in the optical telecommunications band near 1550 nm. First, we provide an overview of the material properties of different 2D materials. Next, we review different methods for characterizing the third-order optical nonlinearities of 2D materials, including the Z-scan technique, third-harmonic generation (THG) measurement, and hybrid device characterization, together with a summary of the measured n2 values in the telecommunications band. Finally, the current challenges and future perspectives are discussed.
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Affiliation(s)
- Linnan Jia
- Optical Sciences Center, Swinburne University of Technology, Hawthorn, VIC 3122, Australia
| | - Jiayang Wu
- Optical Sciences Center, Swinburne University of Technology, Hawthorn, VIC 3122, Australia
| | - Yuning Zhang
- Optical Sciences Center, Swinburne University of Technology, Hawthorn, VIC 3122, Australia
| | - Yang Qu
- Optical Sciences Center, Swinburne University of Technology, Hawthorn, VIC 3122, Australia
| | - Baohua Jia
- School of Science, RMIT University, Melbourne, VIC 3001, Australia
- Australian Research Council (ARC) Industrial Transformation Training, Centre in Surface Engineering for Advanced Materials (SEAM), RMIT University, Melbourne, VIC 3000, Australia
| | - David J. Moss
- Optical Sciences Center, Swinburne University of Technology, Hawthorn, VIC 3122, Australia
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29
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Liu X, Wang J, Lin Y, Zhou J, Liu Q, Yu W, Cai Y, Li X, Botcha VD, Rao T, Huang S. Synthesis of Rhenium-Doped Molybdenum Sulfide by Atmospheric Pressure Chemical Vapor Deposition (CVD) for a High-Performance Photodetector. ACS OMEGA 2022; 7:48301-48309. [PMID: 36591144 PMCID: PMC9798488 DOI: 10.1021/acsomega.2c06480] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/07/2022] [Accepted: 11/28/2022] [Indexed: 06/17/2023]
Abstract
Two-dimensional layered materials have attracted tremendous attention as photodetectors due to their fascinating features, including comprehensive coverage of band gaps, high potential in new-generation electronic devices, mechanical flexibility, and sensitive light-mass interaction. Currently, graphene and transition-metal dichalcogenides (TMDCs) are the most attractive active materials for constructing photodetectors. A growing number of emerging TMDCs applied in photodetectors bring up opportunities in the direct band gap independence with thickness. This study demonstrated for the first time a photodetector based on a few-layer Re x Mo1-x S2, which was grown by chemical vapor deposition (CVD) under atmospheric pressure. The detailed material characterizations were performed using Raman spectroscopy, photoluminescence, and X-ray photoelectron spectroscopy (XPS) on an as-grown few-layer Re x Mo1-x S2. The results show that both MoS2 and ReS2 peaks appear in the Re x Mo1-x S2 Raman diagram. Re x Mo1-x S2 is observed to emit light at a wavelength of 716.8 nm. The electronic band structure of the few layers of Re x Mo1-x S2 calculated using the first-principles theory suggests that the band gap of Re x Mo1-x S2 is larger than that of ReS2 and smaller than that of MoS2, which is consistent with the photoluminescence results. The thermal stability of the few layers of Re x Mo1-x S2 was evaluated using Raman temperature measurements. It is found that the thermal stability of Re x Mo1-x S2 is close to those of pure ReS2 and MoS2. The fabricated Re x Mo1-x S2 photodetector shows a high response rate of 7.46 A W-1 under 365 nm illumination, offering a competitive performance to the devices based on TMDCs and graphenes. This study unambiguously distinguishes Re x Mo1-x S2 as a future candidate in electronics and optoelectronics.
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Affiliation(s)
- Xinke Liu
- College
of Materials Science and Engineering, College of Electronic and Information
Engineering, Institute of Microelectronics (IME), Guangdong Research
Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Avenue, Shenzhen518060, People’s
Republic of China
| | - Jiangchuan Wang
- College
of Materials Science and Engineering, College of Electronic and Information
Engineering, Institute of Microelectronics (IME), Guangdong Research
Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Avenue, Shenzhen518060, People’s
Republic of China
| | - Yuheng Lin
- College
of Materials Science and Engineering, College of Electronic and Information
Engineering, Institute of Microelectronics (IME), Guangdong Research
Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Avenue, Shenzhen518060, People’s
Republic of China
| | - Jie Zhou
- College
of Materials Science and Engineering, College of Electronic and Information
Engineering, Institute of Microelectronics (IME), Guangdong Research
Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Avenue, Shenzhen518060, People’s
Republic of China
| | - Qiang Liu
- State
Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information
Technology, CAS, 865
Chang Ning Road, Shanghai200050, People’s Republic
of China
| | - Wenjie Yu
- State
Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information
Technology, CAS, 865
Chang Ning Road, Shanghai200050, People’s Republic
of China
| | - Yongqing Cai
- Joint
Key Laboratory of Ministry of Education, Institute of Applied Physics
and Materials Engineering, University of
Macau, Taipa, Macau999078, China
| | - Xiaohua Li
- College
of Materials Science and Engineering, College of Electronic and Information
Engineering, Institute of Microelectronics (IME), Guangdong Research
Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Avenue, Shenzhen518060, People’s
Republic of China
| | - V. Divakar Botcha
- College
of Materials Science and Engineering, College of Electronic and Information
Engineering, Institute of Microelectronics (IME), Guangdong Research
Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Avenue, Shenzhen518060, People’s
Republic of China
| | - Tingke Rao
- College
of Materials Science and Engineering, College of Electronic and Information
Engineering, Institute of Microelectronics (IME), Guangdong Research
Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Avenue, Shenzhen518060, People’s
Republic of China
| | - Shuangwu Huang
- College
of Materials Science and Engineering, College of Electronic and Information
Engineering, Institute of Microelectronics (IME), Guangdong Research
Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Avenue, Shenzhen518060, People’s
Republic of China
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30
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Mahmoodi E, Amiri MH, Salimi A, Frisenda R, Flores E, Ares JR, Ferrer IJ, Castellanos-Gomez A, Ghasemi F. Paper-based broadband flexible photodetectors with van der Waals materials. Sci Rep 2022; 12:12585. [PMID: 35869156 PMCID: PMC9307754 DOI: 10.1038/s41598-022-16834-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/27/2022] [Accepted: 07/18/2022] [Indexed: 11/09/2022] Open
Abstract
Layered metal chalcogenide materials are exceptionally appealing in optoelectronic devices thanks to their extraordinary optical properties. Recently, their application as flexible and wearable photodetectors have received a lot of attention. Herein, broadband and high-performance paper-based PDs were established in a very facile and inexpensive method by rubbing molybdenum disulfide and titanium trisulfide crystals on papers. Transferred layers were characterized by SEM, EDX mapping, and Raman analyses, and their optoelectronic properties were evaluated in a wavelength range of 405–810 nm. Although the highest and lowest photoresponsivities were respectively measured for TiS3 (1.50 mA/W) and MoS2 (1.13 μA/W) PDs, the TiS3–MoS2 heterostructure not only had a significant photoresponsivity but also showed the highest on/off ratio (1.82) and fast response time (0.96 s) compared with two other PDs. This advantage is due to the band offset formation at the heterojunction, which efficiently separates the photogenerated electron–hole pairs within the heterostructure. Numerical simulation of the introduced PDs also confirmed the superiority of TiS3–MoS2 heterostructure over the other two PDs and exhibited a good agreement with the experimental results. Finally, MoS2 PD demonstrated very high flexibility under applied strain, but TiS3 based PDs suffered from its fragility and experience a remarkable drain current reduction at strain larger than ± 0.33%. However, at lower strains, all PDs displayed acceptable performances.
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31
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Luo W, Oyedele AD, Mao N, Puretzky A, Xiao K, Liang L, Ling X. Excitation-Dependent Anisotropic Raman Response of Atomically Thin Pentagonal PdSe 2. ACS PHYSICAL CHEMISTRY AU 2022; 2:482-489. [PMID: 36465836 PMCID: PMC9706783 DOI: 10.1021/acsphyschemau.2c00007] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/02/2022] [Revised: 07/15/2022] [Accepted: 07/22/2022] [Indexed: 06/17/2023]
Abstract
The group-10 noble-metal dichalcogenides have recently emerged as a promising group of two-dimensional materials due to their unique crystal structures and fascinating physical properties. In this work, the resonance enhancement of the interlayer breathing mode (B1) and intralayer Ag 1 and Ag 3 modes in atomically thin pentagonal PdSe2 were studied using angle-resolved polarized Raman spectroscopy with 13 excitation wavelengths. Under the excitation energies of 2.33, 2.38, and 2.41 eV, the Raman intensities of both the low-frequency breathing mode B1 and high-frequency mode Ag 1 of all the thicknesses are the strongest when the incident polarization is parallel to the a axis of PdSe2, serving as a fast identification of the crystal orientation of few-layer PdSe2. We demonstrated that the intensities of B1, Ag 1, and Ag 3 modes are the strongest with the excitation energies between 2.18 and 2.38 eV when the incident polarization is parallel to PdSe2 a axis, which arises from the resonance enhancement caused by the absorption. Our investigation reveals the underlying interplay of the anisotropic electron-phonon and electron-photon interactions in the Raman scattering process of atomically thin PdSe2. It paves the way for future applications on PdSe2-based optoelectronics.
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Affiliation(s)
- Weijun Luo
- Department
of Chemistry, Boston University, Boston, Massachusetts 02215, United States
| | - Akinola D. Oyedele
- Center
for Nanophase Materials Sciences, Oak Ridge
National Laboratory, Oak Ridge, Tennessee 37831, United States
- Bredesen
Center for Interdisciplinary Research and Graduate Education, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Nannan Mao
- Department
of Chemistry, Boston University, Boston, Massachusetts 02215, United States
- Department
of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Alexander Puretzky
- Center
for Nanophase Materials Sciences, Oak Ridge
National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Kai Xiao
- Center
for Nanophase Materials Sciences, Oak Ridge
National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Liangbo Liang
- Center
for Nanophase Materials Sciences, Oak Ridge
National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Xi Ling
- Department
of Chemistry, Boston University, Boston, Massachusetts 02215, United States
- Division
of Materials Science and Engineering, Boston
University, Boston, Massachusetts 02215, United States
- The Photonics
Center, Boston University, Boston, Massachusetts 02215, United States
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32
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Gu Y, Zhang L, Cai H, Liang L, Liu C, Hoffman A, Yu Y, Houston A, Puretzky AA, Duscher G, Rack PD, Rouleau CM, Meng X, Yoon M, Geohegan DB, Xiao K. Stabilized Synthesis of 2D Verbeekite: Monoclinic PdSe 2 Crystals with High Mobility and In-Plane Optical and Electrical Anisotropy. ACS NANO 2022; 16:13900-13910. [PMID: 35775975 DOI: 10.1021/acsnano.2c02711] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
PdSe2 has a layered structure with an unusual, puckered Cairo pentagonal tiling. Its atomic bond configuration features planar 4-fold-coordinated Pd atoms and intralayer Se-Se bonds that enable polymorphic phases with distinct electronic and quantum properties, especially when atomically thin. PdSe2 is conventionally orthorhombic, and direct synthesis of its metastable polymorphic phases is still a challenge. Here, we report an ambient-pressure chemical vapor deposition approach to synthesize metastable monoclinic PdSe2. Monoclinic PdSe2 is shown to be synthesized selectively under Se-deficient conditions that induce Se vacancies. These defects are shown by first-principles density functional theory calculations to reduce the free energy of the metastable monoclinic phase, thereby stabilizing it during synthesis. The structure and composition of the monoclinic PdSe2 crystals are identified and characterized by scanning transmission electron microscopy imaging, convergent beam electron diffraction, and electron energy loss spectroscopy. Polarized Raman spectroscopy of the monoclinic PdSe2 flakes reveals their strong in-plane optical anisotropy. Electrical transport measurements show that the monoclinic PdSe2 exhibits n-type charge carrier conduction with electron mobilities up to ∼298 cm2 V-1 s-1 and a strong in-plane electron mobility anisotropy of ∼1.9. The defect-mediated growth pathway identified in this work is promising for phase-selective direct synthesis of other 2D transition metal dichalcogenides.
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Affiliation(s)
- Yiyi Gu
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Lizhi Zhang
- Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, United States
- Laboratory of Theoretical and Computational Nanoscience, National Center for Nanoscience and Technology of China, Beijing 100190, China
| | - Hui Cai
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Liangbo Liang
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Chenze Liu
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Anna Hoffman
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Yiling Yu
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Austin Houston
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Alexander A Puretzky
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Gerd Duscher
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Philip D Rack
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Christopher M Rouleau
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Xiangmin Meng
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Mina Yoon
- Materials Sciences and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - David B Geohegan
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Kai Xiao
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
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33
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Wu J, Ma H, Zhong C, Wei M, Sun C, Ye Y, Xu Y, Tang B, Luo Y, Sun B, Jian J, Dai H, Lin H, Li L. Waveguide-Integrated PdSe 2 Photodetector over a Broad Infrared Wavelength Range. NANO LETTERS 2022; 22:6816-6824. [PMID: 35787028 DOI: 10.1021/acs.nanolett.2c02099] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Hybrid integration of van der Waals materials on a photonic platform enables diverse exploration of novel active functions and significant improvement in device performance for next-generation integrated photonic circuits, but developing waveguide-integrated photodetectors based on conventionally investigated transition metal dichalcogenide materials at the full optical telecommunication bands and mid-infrared range is still a challenge. Here, we integrate PdSe2 with silicon waveguide for on-chip photodetection with a high responsivity from 1260 to 1565 nm, a low noise-equivalent power of 4.0 pW·Hz-0.5, a 3-dB bandwidth of 1.5 GHz, and a measured data rate of 2.5 Gbit·s-1. The achieved PdSe2 photodetectors provide new insights to explore the integration of novel van der Waals materials with integrated photonic platforms and exhibit great potential for diverse applications over a broad infrared range of wavelengths, such as on-chip sensing and spectroscopy.
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Affiliation(s)
- Jianghong Wu
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, China
| | - Hui Ma
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
- MOE Frontier Science Center for Brain Science & Brain-Machine Integration, Zhejiang University, Hangzhou 310027, China
| | - Chuyu Zhong
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
- MOE Frontier Science Center for Brain Science & Brain-Machine Integration, Zhejiang University, Hangzhou 310027, China
| | - Maoliang Wei
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
- MOE Frontier Science Center for Brain Science & Brain-Machine Integration, Zhejiang University, Hangzhou 310027, China
| | - Chunlei Sun
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, China
| | - Yuting Ye
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, China
| | - Yan Xu
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, China
| | - Bo Tang
- Institute of Microelectronics, Chinese Academic Society, Beijing 100029, China
| | - Ye Luo
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, China
| | - Boshu Sun
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
- MOE Frontier Science Center for Brain Science & Brain-Machine Integration, Zhejiang University, Hangzhou 310027, China
| | - Jialing Jian
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, China
| | - Hao Dai
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
- MOE Frontier Science Center for Brain Science & Brain-Machine Integration, Zhejiang University, Hangzhou 310027, China
| | - Hongtao Lin
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
- MOE Frontier Science Center for Brain Science & Brain-Machine Integration, Zhejiang University, Hangzhou 310027, China
| | - Lan Li
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, China
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34
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Liu Z, Han T, Liu M, Huang S, Zhang Z, Long M, Hou X, Shan L. Protonation enhanced superconductivity in PdTe 2. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:335603. [PMID: 35679850 DOI: 10.1088/1361-648x/ac7767] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/16/2022] [Accepted: 06/09/2022] [Indexed: 06/15/2023]
Abstract
Electrochemical ionic liquid gating is an effective way to intercalate ions into layered materials and modulate the properties. Here we report an enhanced superconductivity in a topological superconductor candidate PdTe2through electrochemical gating procedure. The superconducting transition temperature was increased to approximately 3.2 K by ionic gating induced protonation at room temperature. Moreover, a further enhanced superconductivity of both superconducting transition temperature and superconducting volume fraction was observed after the gated samples were placed in a glove box for 2 months. This may be caused by the diffusion of protons in the gated single crystals, which is rarely reported in electrochemical ionic liquid gating experiments. Our results further the superconducting study of PdTe2and may reveal a common phenomenon in the electrochemical gating procedure.
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Affiliation(s)
- Zhen Liu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
| | - Tao Han
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
- Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Anhui University, Hefei 230601, People's Republic of China
| | - Mengqin Liu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
| | - Shuting Huang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
| | - Zongyuan Zhang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
- Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Anhui University, Hefei 230601, People's Republic of China
| | - Mingsheng Long
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
- Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Anhui University, Hefei 230601, People's Republic of China
| | - Xingyuan Hou
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
- Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Anhui University, Hefei 230601, People's Republic of China
| | - Lei Shan
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
- Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Anhui University, Hefei 230601, People's Republic of China
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35
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Shiraishi M, Noda D, Ohta R, Kan T. Room-temperature plasmonic mid-infrared photodetector based on PtSi/p-Si low Schottky-barrier junction. APPLIED OPTICS 2022; 61:3987-3996. [PMID: 36256071 DOI: 10.1364/ao.457717] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/08/2022] [Accepted: 04/19/2022] [Indexed: 06/16/2023]
Abstract
In this study, a low Schottky-barrier photodetector with a plasmonic assist using a two-dimensional (2D) nanohole array was demonstrated, which receives mid-infrared (MIR) light at room temperature. In the structural design, it was confirmed that the 2D nanohole-array photodetector has high absorbance in the MIR region using rigorous coupled-wave analysis. The result showed that the nanoholes formed in p-type silicon (p-Si), platinum silicide (PtSi), to form Schottky barriers, and gold (Au), for photocurrent extraction, had high absorbance in the MIR region along with the Fabry-Perot resonance mode toward the depth of the nanohole. The 2D nanohole array, with Au/PtSi/p-Si layers, has high absorbance for illuminating MIR light near 3.46 µm from the backside. The current-voltage characteristics indicated a low Schottky barrier of 0.32 eV, confirming the photoresponsive potential in the MIR photodetection. The photocurrent response to the modulation signal was obtained at room temperature. In addition, signal processing through transimpedance and lock-in amplifiers enabled us to obtain characteristics with high linearity for light intensities in milliwatts. Light acquisition for 2.5-3.8-µm-long MIR wavelength became possible, and applications in gas sensing, including vibrational absorption bands of alkane groups, are expected.
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36
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Zhang J, Liu D, Ou Q, Lu Y, Huang J. Covalent Coupling of Porphyrins with Monolayer Graphene for Low-Voltage Synaptic Transistors. ACS APPLIED MATERIALS & INTERFACES 2022; 14:11699-11707. [PMID: 35213150 DOI: 10.1021/acsami.1c22073] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Synaptic devices emulating biological synapses are a key building component of artificial neural networks. Porphyrins and graphene, as two kinds of emerging electronic materials, have attracted extensive attention in the research of photoelectric devices due to their excellent structural and functional properties. Herein, we present a photonic synaptic transistor based on porphyrin-graphene covalent hybrids utilizing 5,10,15,20-tetrakis (4-aminophenyl)-21H,23H-porphine and monolayer graphene linked through the diazo addition reaction. The photonic synaptic device successfully simulates several essential biological functions, and the synaptic plasticity can be regulated by adjusting the parameters of light spikes and gate voltages of the device. Moreover, learning and memory behaviors under different wavelengths are studied to imitate the learning efficiency of humans in diverse emotional states. It is worth noting that all the synaptic functions can be realized at a low operating voltage of -10 mV, which is much lower than that required by most reported photonic synaptic devices. These results indicate that covalent coupling products of porphyrins with graphene have broad prospects in the construction of synaptic transistors and may arouse new research advances in neuromorphic devices with ultralow operating voltage and low energy consumption.
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Affiliation(s)
- Junyao Zhang
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Frontiers Science Center for Intelligent Autonomous Systems, Tongji University, Shanghai 201804, P. R. China
| | - Dapeng Liu
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Frontiers Science Center for Intelligent Autonomous Systems, Tongji University, Shanghai 201804, P. R. China
| | - Qingqing Ou
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Frontiers Science Center for Intelligent Autonomous Systems, Tongji University, Shanghai 201804, P. R. China
| | - Yang Lu
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Frontiers Science Center for Intelligent Autonomous Systems, Tongji University, Shanghai 201804, P. R. China
| | - Jia Huang
- Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Frontiers Science Center for Intelligent Autonomous Systems, Tongji University, Shanghai 201804, P. R. China
- Translational Research Institute of Brain and Brain-Like Intelligence, Shanghai Fourth People's Hospital Affiliated to Tongji University, School of Materials Science and Engineering, Tongji University, Shanghai 200434, P. R. China
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Jia L, Wu J, Zhang Y, Qu Y, Jia B, Chen Z, Moss DJ. Fabrication Technologies for the On-Chip Integration of 2D Materials. SMALL METHODS 2022; 6:e2101435. [PMID: 34994111 DOI: 10.1002/smtd.202101435] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/18/2021] [Revised: 12/12/2021] [Indexed: 06/14/2023]
Abstract
With compact footprint, low energy consumption, high scalability, and mass producibility, chip-scale integrated devices are an indispensable part of modern technological change and development. Recent advances in 2D layered materials with their unique structures and distinctive properties have motivated their on-chip integration, yielding a variety of functional devices with superior performance and new features. To realize integrated devices incorporating 2D materials, it requires a diverse range of device fabrication techniques, which are of fundamental importance to achieve good performance and high reproducibility. This paper reviews the state-of-art fabrication techniques for the on-chip integration of 2D materials. First, an overview of the material properties and on-chip applications of 2D materials is provided. Second, different approaches used for integrating 2D materials on chips are comprehensively reviewed, which are categorized into material synthesis, on-chip transfer, film patterning, and property tuning/modification. Third, the methods for integrating 2D van der Waals heterostructures are also discussed and summarized. Finally, the current challenges and future perspectives are highlighted.
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Affiliation(s)
- Linnan Jia
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
| | - Jiayang Wu
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
| | - Yuning Zhang
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
| | - Yang Qu
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
| | - Baohua Jia
- Centre for Translational Atomaterials, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
| | - Zhigang Chen
- MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEDA Applied Physics Institute and School of Physics, Nankai University, Tianjin, 300457, China
- Department of Physics and Astronomy, San Francisco State University, San Francisco, CA, 94132, USA
| | - David J Moss
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, VIC, 3122, Australia
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Peyyety NA, Kumar S, Li MK, Dehm S, Krupke R. Tailoring Spectrally Flat Infrared Photodetection with Thickness-Controlled Nanocrystalline Graphite. ACS APPLIED MATERIALS & INTERFACES 2022; 14:9525-9534. [PMID: 35138788 DOI: 10.1021/acsami.1c24306] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Graphene, a zero-gap semiconductor, absorbs 2.3% of incident photons in a wide wavelength range as a free-standing monolayer, whereas 50% is expected for ∼90 layers. Adjusting the layer number allows the tailoring of the photoresponse; however, controlling the thickness of multilayer graphene remains challenging on the wafer scale. Nanocrystalline graphene or graphite (NCG) can instead be grown with controlled thickness. We have fabricated photodetectors from NCG that are spectrally flat in the near-infrared to short-wavelength infrared region by tailoring the layer thicknesses. Transfer matrix simulations were used to determine the NCG thickness for maximum light absorption in the NCG layer on a silicon substrate. The extrinsic and intrinsic photoresponse was determined from 1100 to 2100 nm using chromatic aberration-corrected photocurrent spectroscopy. Diffraction-limited hyperspectral photocurrent imaging shows that the biased photoresponse is unipolar and homogeneous across the device area, whereas the short-circuit photoresponse gives rise to positive and negative photocurrents at the electrodes. The intrinsic photoresponses are wavelength-independent, indicative of bolometric and electrothermal photodetection.
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Affiliation(s)
- Naga Anirudh Peyyety
- Institute of Nanotechnology, Karlsruhe Institute of Technology, 76021 Karlsruhe, Germany
- Institute of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt, Germany
| | - Sandeep Kumar
- Institute of Nanotechnology, Karlsruhe Institute of Technology, 76021 Karlsruhe, Germany
- Institute of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt, Germany
| | - Min-Ken Li
- Institute of Quantum Materials and Technologies, Karlsruhe Institute of Technology, 76021 Karlsruhe, Germany
- Institute of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt, Germany
| | - Simone Dehm
- Institute of Nanotechnology, Karlsruhe Institute of Technology, 76021 Karlsruhe, Germany
| | - Ralph Krupke
- Institute of Nanotechnology, Karlsruhe Institute of Technology, 76021 Karlsruhe, Germany
- Institute of Quantum Materials and Technologies, Karlsruhe Institute of Technology, 76021 Karlsruhe, Germany
- Institute of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt, Germany
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Raval D, Gupta SK, Gajjar PN, Ahuja R. Strain modulating electronic band gaps and SQ efficiencies of semiconductor 2D PdQ 2 (Q = S, Se) monolayer. Sci Rep 2022; 12:2964. [PMID: 35194055 PMCID: PMC8863876 DOI: 10.1038/s41598-022-06142-6] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/24/2021] [Accepted: 01/18/2022] [Indexed: 11/16/2022] Open
Abstract
We studied the physical, electronic transport and optical properties of a unique pentagonal PdQ2 (Q = S, Se) monolayers. The dynamic stability of 2Dwrinkle like-PdQ2 is proven by positive phonon frequencies in the phonon dispersion curve. The optimized structural parameters of wrinkled pentagonal PdQ2 are in good agreement with the available experimental results. The ultimate tensile strength (UTHS) was calculated and found that, penta-PdS2 monolayer can withstand up to 16% (18%) strain along x (y) direction with 3.44 GPa (3.43 GPa). While, penta-PdSe2 monolayer can withstand up to 17% (19%) strain along x (y) dirrection with 3.46 GPa (3.40 GPa). It is found that, the penta-PdQ2 monolayers has the semiconducting behavior with indirect band gap of 0.94 and 1.26 eV for 2D-PdS2 and 2D-PdSe2, respectively. More interestingly, at room temperacture, the hole mobilty (electron mobility) obtained for 2D-PdS2 and PdSe2 are 67.43 (258.06) cm2 V-1 s-1 and 1518.81 (442.49) cm2 V-1 s-1, respectively. In addition, I-V characteristics of PdSe2 monolayer show strong negative differential conductance (NDC) region near the 3.57 V. The Shockly-Queisser (SQ) effeciency prameters of PdQ2 monolayers are also explored and the highest SQ efficeinciy obtained for PdS2 is 33.93% at -5% strain and for PdSe2 is 33.94% at -2% strain. The penta-PdQ2 exhibits high optical absorption intensity in the UV region, up to 4.04 × 105 (for PdS2) and 5.28 × 105 (for PdSe2), which is suitable for applications in optoelectronic devices. Thus, the ultrathin PdQ2 monolayers could be potential material for next-generation solar-cell applications and high performance nanodevices.
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Affiliation(s)
- Dhara Raval
- Department of Physics, University School of Sciences, Gujarat University, Ahmedabad, 380009, India
| | - Sanjeev K Gupta
- Computational Materials and Nanoscience Group, Department of Physics and Electronics, St. Xavier's College, Ahmedabad, 380009, India.
| | - P N Gajjar
- Department of Physics, University School of Sciences, Gujarat University, Ahmedabad, 380009, India.
| | - Rajeev Ahuja
- Condensed Matter Theory Group, Department of Physics and Astronomy, Uppsala University, Box 516, 751 20, Uppsala, Sweden
- Department of Physics, Indian Institute of Technology Ropar, Rupnagar, Punjab, 140001, India
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40
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Dai M, Wang C, Ye M, Zhu S, Han S, Sun F, Chen W, Jin Y, Chua Y, Wang QJ. High-Performance, Polarization-Sensitive, Long-Wave Infrared Photodetection via Photothermoelectric Effect with Asymmetric van der Waals Contacts. ACS NANO 2022; 16:295-305. [PMID: 35014251 DOI: 10.1021/acsnano.1c06286] [Citation(s) in RCA: 27] [Impact Index Per Article: 13.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Long-wavelength infrared (LWIR) photodetection is important for heat-seeking technologies, such as thermal imaging, all-weather surveillance, and missile guidance. Among various detection techniques, photothermoelectric (PTE) detectors are promising in that they can realize ultra-broadband photodetection at room temperature without an external power supply. However, their performance in terms of speed, responsivity, and noise level in the LWIR regime still needs further improvement. Here, we demonstrated a high-performance PTE photodetector based on low-symmetry palladium selenide (PdSe2) with asymmetric van der Waals contacts. The temperature gradient induced by asymmetric van der Waals contacts even under global illumination drives carrier diffusion to produce a photovoltage via the PTE effect. A responsivity of over 13 V/W, a response time of ∼50 μs, and a noise equivalent power of less than 7 nW/Hz1/2 are obtained in the 4.6-10.5 μm regime at room temperature. Furthermore, due to the anisotropic absorption of PdSe2, the detector exhibits a linear polarization angle sensitive response with an anisotropy ratio of 2.06 at 4.6 μm and 1.21 at 10.5 μm, respectively. Our proposed device architecture provides an alternative strategy to design high-performance photodetectors in the LWIR regime by utilizing van der Waals layered materials.
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Affiliation(s)
- Mingjin Dai
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Chongwu Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Ming Ye
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Song Zhu
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Song Han
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Fangyuan Sun
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Wenduo Chen
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Yuhao Jin
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Yunda Chua
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Qi Jie Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
- Centre for Disruptive Photonic Technologies, Division of Physics and Applied Physics School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
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41
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Shikoh AS, Choi GS, Hong S, Jeong KS, Kim J. High-sensitivity hybrid PbSe/ITZO thin film-based phototransistor detecting from 2100 to 2500 nm near-infrared illumination. NANOTECHNOLOGY 2022; 33:165501. [PMID: 34983035 DOI: 10.1088/1361-6528/ac47d3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/11/2021] [Accepted: 01/04/2022] [Indexed: 06/14/2023]
Abstract
We report that high absorption PbSe colloidal quantum dots (QDs) having a peak absorbance beyond 2100 nm were synthesized and incorporated into InSnZnO (ITZO) channel layer-based thin film transistors (TFTs). It was intended that PbSe QDs with proportionally less photocurrent modulation can be remedied by semiconducting and low off-current ITZO-based TFT configuration. Multiple deposition scheme of PbSe QDs on ITZO metal oxide thin film gave rise to nearly linear increase of film thickness with acceptably uniform and smooth surface (less than 10 nm). Hybrid PbSe/ITZO thin film-based phototransistor exhibited the best performance of near infrared (NIR) detection in terms of response time, sensitivity and detectivity as high as 0.38 s, 3.91 and 4.55 × 107Jones at room temperature, respectively. This is indebted mainly from the effective diffusion of photogenerated carrier from the PbSe surface to ITZO channel layer as well as from the conduction band alignment between them. Therefore, we believe that our hybrid PbSe/ITZO material platform can be widely used to be in favour of incorporation of solution-processed colloidal light absorbing material into the high-performance metal oxide thin film transistor configuration.
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Affiliation(s)
- Ali Sehpar Shikoh
- Department of Photonics and Nanoelectronics, Hanyang University, Ansan, Republic of Korea
| | - Gi Sang Choi
- Department of Photonics and Nanoelectronics, Hanyang University, Ansan, Republic of Korea
- BK21 FOUR ERICA-ACE Center, Hanyang University, Ansan, Gyeonggi 15588, Republic of Korea
| | - Sungmin Hong
- Department of Chemistry and Center for Molecular Spectroscopy and Dynamics, Korea University, Seoul, Republic of Korea
| | - Kwang Seob Jeong
- Department of Chemistry and Center for Molecular Spectroscopy and Dynamics, Korea University, Seoul, Republic of Korea
| | - Jaekyun Kim
- Department of Photonics and Nanoelectronics, Hanyang University, Ansan, Republic of Korea
- BK21 FOUR ERICA-ACE Center, Hanyang University, Ansan, Gyeonggi 15588, Republic of Korea
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Wang X, Xiong T, Zhao K, Zhou Z, Xin K, Deng HX, Kang J, Yang J, Liu YY, Wei Z. Polarimetric Image Sensor and Fermi Level Shifting Induced Multichannel Transition Based on 2D PdPS. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2107206. [PMID: 34676919 DOI: 10.1002/adma.202107206] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/10/2021] [Revised: 10/20/2021] [Indexed: 06/13/2023]
Abstract
2D materials have been attracting high interest in recent years due to their low structural symmetry, excellent photoresponse, and high air stability. However, most 2D materials can only respond to specific light, which limits the development of wide-spectrum photodetectors. Proper bandgap and the regulation of Fermi level are the foundations for realizing electronic multichannel transition, which is an effective method to achieve a wide spectral response. Herein, a noble 2D material, palladium phosphide sulfide (PdPS), is designed and synthesized. The bandgap of PdPS is around 2.1 eV and the formation of S vacancies, interstitial Pd and P atoms promote the Fermi level very close to the conduction band. Therefore, the PdPS-based photodetector shows impressive wide spectral response from solar-blind ultraviolet to near-infrared based on the multichannel transition. It also exhibits superior optoelectrical properties with photoresponsivity (R) of 1 × 103 A W-1 and detectivity (D*) of 4 × 1011 Jones at 532 nm. Moreover, PdPS exhibits good performance of polarization detection with dichroic ratio of ≈3.7 at 808 nm. Significantly, it achieves polarimetric imaging and hidden-target detection in complex environments through active detection.
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Affiliation(s)
- Xingang Wang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Sino-Danish Center for Education and Research, Sino-Danish College, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tao Xiong
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Kai Zhao
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Ziqi Zhou
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Kaiyao Xin
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Sino-Danish Center for Education and Research, Sino-Danish College, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Hui-Xiong Deng
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Jun Kang
- Beijing Computational Science Research Center, Beijing, 100193, China
| | - Juehan Yang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Yue-Yang Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Sino-Danish Center for Education and Research, Sino-Danish College, University of Chinese Academy of Sciences, Beijing, 100049, China
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Dong Z, Yu W, Zhang L, Mu H, Xie L, Li J, Zhang Y, Huang L, He X, Wang L, Lin S, Zhang K. Highly Efficient, Ultrabroad PdSe 2 Phototransistors from Visible to Terahertz Driven by Mutiphysical Mechanism. ACS NANO 2021; 15:20403-20413. [PMID: 34780146 DOI: 10.1021/acsnano.1c08756] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The noble transition metal dichalcogenide palladium diselenide (PdSe2) is an ideal candidate material for broad-spectrum photodetection owing to the large bandgap tunability, high mobility, low thermal conductivity, and large Seebeck coefficient. In this study, self-powered ultrabroadband PdSe2 photodetectors from the visible-infrared to terahertz (THz) region driven by a mutiphysical mechanism are reported. In the visible-infrared region, the photogenerated electron-hole pairs in the PdSe2 body are quickly separated by the built-in electric field at the metal-semiconductor interface and achieve a photoresponsivity of 28 A·W-1 at 405 nm and 0.4 A·W-1 at 1850 nm. In the THz region, PdSe2 photodetectors display a room-temperature responsivity of 20 mA·W-1 at 0.10 THz and 5 mA·W-1 at 0.24 THz based on efficient production of hot carriers in an antenna-assisted structure. Owing to the fast response speed of ∼7.5 μs and low noise equivalent power of ∼900 pW·Hz-1/2, high-resolution transmission THz imaging is demonstrated under an ambient environment at room temperature. Our research validates the great potential of PdSe2 for broadband photodetection and provides a possibility for future optoelectronic applications.
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Affiliation(s)
- Zhuo Dong
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Wenzhi Yu
- Songshan Lake Materials Laboratory, Dongguan 523000, China
| | - Libo Zhang
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- Department of Optoelectronic Science and Engineering, Donghua University, Shanghai 201620, China
| | - Haoran Mu
- Songshan Lake Materials Laboratory, Dongguan 523000, China
| | - Liu Xie
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
- Yangtze Memory Technologies Co., Ltd., Wuhan 430074, China
| | - Jie Li
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Yan Zhang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Luyi Huang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Xiaoyue He
- Songshan Lake Materials Laboratory, Dongguan 523000, China
| | - Lin Wang
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Shenghuang Lin
- Songshan Lake Materials Laboratory, Dongguan 523000, China
| | - Kai Zhang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
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44
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Wang P, He D, Wang Y, Zhang X, He X, He J, Zhao H. Ultrafast Interlayer Charge Transfer between Bilayer PtSe 2 and Monolayer WS 2. ACS APPLIED MATERIALS & INTERFACES 2021; 13:57822-57830. [PMID: 34797636 DOI: 10.1021/acsami.1c18189] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Interlayer charge transfer (CT) between PtSe2 and WS2 is studied experimentally. Layer-selective pump-probe and photoluminescence quenching measurements reveal ultrafast interlayer CT in the heterostructure formed by bilayer PtSe2 and monolayer WS2, confirming its type-II band alignment. The CT facilitates the formation of the interlayer excitons with a lifetime of several hundred ps to 1 ns, a diffusion coefficient of 0.9 cm2 s-1, and a diffusion length reaching 200 nm. These results demonstrate the integration of PtSe2 with other materials in van der Waals heterostructures with novel charge-transfer properties and help develop fundamental understanding on the performance of various optoelectronic devices based on heterostructures involving PtSe2.
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Affiliation(s)
- Pengzhi Wang
- College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing 100029, China
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Dawei He
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Yongsheng Wang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Xiaoxian Zhang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Xiaoyue He
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Jiaqi He
- College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing 100029, China
| | - Hui Zhao
- Department of Physics and Astronomy, The University of Kansas, Lawrence, Kansas 66045, United States
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45
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Zhang X, Li L, Ji C, Liu X, Li Q, Zhang K, Peng Y, Hong M, Luo J. Rational design of high-quality 2D/3D perovskite heterostructure crystals for record-performance polarization-sensitive photodetection. Natl Sci Rev 2021; 8:nwab044. [PMID: 34858607 PMCID: PMC8566186 DOI: 10.1093/nsr/nwab044] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/28/2020] [Revised: 02/24/2021] [Accepted: 03/06/2021] [Indexed: 02/06/2023] Open
Abstract
Polarization-sensitive photodetection is central to optics applications and has been successfully demonstrated in photodetectors of two-dimensional (2D) materials, such as layered hybrid perovskites; however, achieving high polarization sensitivity in such a photodetector remains extremely challenging. Here, for the first time, we demonstrate a high-performance polarization-sensitive photodetector using single-crystalline 2D/3D perovskite heterostructure, namely, (4-AMP)(MA)2Pb3Br10/MAPbBr3 (MA = methylammonium; 4-AMP = 4-(aminomethyl)piperidinium), which exhibits ultrahigh polarization sensitivity up to 17.6 under self-driven mode. To our knowledge, such a high polarization selectivity has surpassed all of the reported perovskite-based devices, and is comparable to, or even better than, the traditional inorganic heterostructure-based photodetectors. Further studies reveal that the built-in electric field formed at the junction can spatially separate the photogenerated electrons and holes, reducing their recombination rate and thus enhancing the performance for polarization-sensitive photodetection. This work provides a new source of polarization-sensitive materials and insights into designing novel optoelectronic devices.
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Affiliation(s)
- Xinyuan Zhang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
| | - Lina Li
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
| | - Chengmin Ji
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
| | - Xitao Liu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
| | - Qing Li
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Kun Zhang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Yu Peng
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
| | - Maochun Hong
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
| | - Junhua Luo
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
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Wang Z, Xia H, Wang P, Zhou X, Liu C, Zhang Q, Wang F, Huang M, Chen S, Wu P, Chen Y, Ye J, Huang S, Yan H, Gu L, Miao J, Li T, Chen X, Lu W, Zhou P, Hu W. Controllable Doping in 2D Layered Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2104942. [PMID: 34569099 DOI: 10.1002/adma.202104942] [Citation(s) in RCA: 24] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/28/2021] [Revised: 09/03/2021] [Indexed: 06/13/2023]
Abstract
For each generation of semiconductors, the issue of doping techniques is always placed at the top of the priority list since it determines whether a material can be used in the electronic and optoelectronic industry or not. When it comes to 2D materials, significant challenges have been found in controllably doping 2D semiconductors into p- or n-type, let alone developing a continuous control of this process. Here, a unique self-modulated doping characteristic in 2D layered materials such as PtSSe, PtS0.8 Se1.2 , PdSe2 , and WSe2 is reported. The varying number of vertically stacked-monolayers is the critical factor for controllably tuning the same material from p-type to intrinsic, and to n-type doping. Importantly, it is found that the thickness-induced lattice deformation makes defects in PtSSe transit from Pt vacancies to anion vacancies based on dynamic and thermodynamic analyses, which leads to p- and n-type conductance, respectively. By thickness-modulated doping, WSe2 diode exhibits a high rectification ratio of 4400 and a large open-circuit voltage of 0.38 V. Meanwhile, the PtSSe detector overcomes the shortcoming of large dark-current in narrow-bandgap optoelectronic devices. All these findings provide a brand-new perspective for fundamental scientific studies and applications.
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Affiliation(s)
- Zhen Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Hui Xia
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Peng Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xiaohao Zhou
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Chunsen Liu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
- Frontier Institute of Chip and System, Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Fang Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Menglin Huang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Shiyou Chen
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Peisong Wu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yunfeng Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jiafu Ye
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Shenyang Huang
- State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai, 200433, China
| | - Hugen Yan
- State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai, 200433, China
| | - Lin Gu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Jinshui Miao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 330106, China
| | - Tianxin Li
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Xiaoshuang Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 330106, China
| | - Wei Lu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 330106, China
| | - Peng Zhou
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
- Frontier Institute of Chip and System, Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 330106, China
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Ye C, Yang Z, Dong J, Huang Y, Song M, Sa B, Zheng J, Zhan H. Layer-Tunable Nonlinear Optical Characteristics and Photocarrier Dynamics of 2D PdSe 2 in Broadband Spectra. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2103938. [PMID: 34677904 DOI: 10.1002/smll.202103938] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/06/2021] [Revised: 08/30/2021] [Indexed: 06/13/2023]
Abstract
Layered 2D transition metal dichalcogenides (TMDCs) exhibited fascinating nonlinear optical (NLO) properties for constructing varied promising optoelectronics. However, exploring the desired 2D materials with both superior nonlinear absorption and ultrafast response in broadband spectra remain the key challenges to harvest their greatest potential. Here, based on synthesizing 2D PdSe2 films with the controlled layer number, the authors systematically demonstrated the broadband giant NLO performance and ultrafast excited carrier dynamics of this emerging material under femtosecond visible-to-near-infrared laser-pulse excitation (400-1550 nm). Layer-dependent and wavelength-dependent evolution of optical bandgap, nonlinear absorption, and photocarrier dynamics in the obtained 2D PdSe2 are clearly revealed. Specially, the transition from semiconducting to semimetallic PdSe2 induced dramatic changes of their interband absorption-relaxation process. This work makes 2D PdSe2 more competitive for future ultrafast photonics and also opens up a new avenue for the optical performance optimization of various 2D materials by rational design of these materials.
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Affiliation(s)
- Chenyu Ye
- College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
| | - Zhenqi Yang
- College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
| | - Junhao Dong
- College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
| | - Yongfeng Huang
- College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
| | - Miaomiao Song
- College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
| | - Baisheng Sa
- College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
| | - Jingying Zheng
- College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
| | - Hongbing Zhan
- College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
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Wang H, Chang J, Huang Y, Lei Z, Du W, Zhou Y, E Y, Xu X. Large In-Plane Anisotropic Terahertz Emission Induced by Asymmetric Polarization in Low-Symmetric PdSe 2. ACS APPLIED MATERIALS & INTERFACES 2021; 13:54543-54550. [PMID: 34734685 DOI: 10.1021/acsami.1c16197] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Palladium diselenide (PdSe2) exhibits air stability, low symmetry, and high carrier mobility, resulting in unique in-plane anisotropy for polarized optoelectronic devices. However, the relationship of the symmetry and the terahertz (THz) radiation remains elusive yet significant for both the THz source in technology and nonlinear optical physics in science. Herein, we observed large in-plane anisotropic THz radiation from multilayer PdSe2 under femtosecond laser excitation. The THz emission demonstrates 2α dependence on the optical polarization angle from the resonant optical rectification combined with a background from the photocarrier acceleration under the surface depletion field. Interestingly, the in-plane THz emission along and perpendicular to the puckered direction demonstrates large anisotropy. Furthermore, the THz time-domain signals exhibit reversed polarities along the positive and negative puckered directions. This asymmetric polarization could relate to the bonding of Pd-Se, resulting in the unidirectional photon-induced current. Our results bridge the gap between the low-symmetry two-dimensional materials and the THz technology, which could promote the development of THz-polarized devices based on low-symmetry layered materials.
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Affiliation(s)
- He Wang
- Shaanxi Joint Lab of Graphene, State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon-Technology, Northwest University, Xi'an 710127, China
| | - Jiawei Chang
- Shaanxi Joint Lab of Graphene, State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon-Technology, Northwest University, Xi'an 710127, China
| | - Yuanyuan Huang
- Shaanxi Joint Lab of Graphene, State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon-Technology, Northwest University, Xi'an 710127, China
| | - Zhen Lei
- Shaanxi Joint Lab of Graphene, State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon-Technology, Northwest University, Xi'an 710127, China
| | - Wanyi Du
- Shaanxi Joint Lab of Graphene, State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon-Technology, Northwest University, Xi'an 710127, China
| | - Yixuan Zhou
- Shaanxi Joint Lab of Graphene, State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon-Technology, Northwest University, Xi'an 710127, China
| | - Yiwen E
- The Institute of Optics, University of Rochester, Rochester, New York 14627, United States
| | - Xinlong Xu
- Shaanxi Joint Lab of Graphene, State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon-Technology, Northwest University, Xi'an 710127, China
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49
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Kim JK, Cho K, Jang J, Baek KY, Kim J, Seo J, Song M, Shin J, Kim J, Parkin SSP, Lee JH, Kang K, Lee T. Molecular Dopant-Dependent Charge Transport in Surface-Charge-Transfer-Doped Tungsten Diselenide Field Effect Transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2101598. [PMID: 34533851 DOI: 10.1002/adma.202101598] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/26/2021] [Revised: 08/15/2021] [Indexed: 06/13/2023]
Abstract
The controllability of carrier density and major carrier type of transition metal dichalcogenides(TMDCs) is critical for electronic and optoelectronic device applications. To utilize doping in TMDC devices, it is important to understand the role of dopants in charge transport properties of TMDCs. Here, the effects of molecular doping on the charge transport properties of tungsten diselenide (WSe2 ) are investigated using three p-type molecular dopants, 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4 -TCNQ), tris(4-bromophenyl)ammoniumyl hexachloroantimonate (magic blue), and molybdenum tris(1,2-bis(trifluoromethyl)ethane-1,2-dithiolene) (Mo(tfd-COCF3 )3 ). The temperature-dependent transport measurements show that the dopant counterions on WSe2 surface can induce Coulomb scattering in WSe2 channel and the degree of scattering is significantly dependent on the dopant. Furthermore, the quantitative analysis revealed that the amount of charge transfer between WSe2 and dopants is related to not only doping density, but also the contribution of each dopant ion toward Coulomb scattering. The first-principles density functional theory calculations show that the amount of charge transfer is mainly determined by intrinsic properties of the dopant molecules such as relative frontier orbital positions and their spin configurations. The authors' systematic investigation of the charge transport of doped TMDCs will be directly relevant for pursuing molecular routes for efficient and controllable doping in TMDC nanoelectronic devices.
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Affiliation(s)
- Jae-Keun Kim
- Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul, 08826, Korea
- Max-Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle (Saale), Germany
| | - Kyungjune Cho
- Max-Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle (Saale), Germany
- Soft Hybrid Materials Research Center, Korea Institute of Science and Technology, Seoul, 02792, Korea
| | - Juntae Jang
- Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul, 08826, Korea
| | - Kyeong-Yoon Baek
- Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul, 08826, Korea
| | - Jehyun Kim
- Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul, 08826, Korea
| | - Junseok Seo
- Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul, 08826, Korea
| | - Minwoo Song
- Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul, 08826, Korea
| | - Jiwon Shin
- Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul, 08826, Korea
| | - Jaeyoung Kim
- Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul, 08826, Korea
| | - Stuart S P Parkin
- Max-Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle (Saale), Germany
| | - Jung-Hoon Lee
- Computational Science Research Center, Korea Institute of Science and Technology, Seoul, 02792, Korea
| | - Keehoon Kang
- Department of Materials Science & Engineering, Yonsei University, Seoul, 03722, Korea
| | - Takhee Lee
- Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul, 08826, Korea
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50
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Yang C, Wang G, Liu M, Yao F, Li H. Mechanism, Material, Design, and Implementation Principle of Two-Dimensional Material Photodetectors. NANOMATERIALS 2021; 11:nano11102688. [PMID: 34685129 PMCID: PMC8537528 DOI: 10.3390/nano11102688] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/12/2021] [Revised: 10/06/2021] [Accepted: 10/08/2021] [Indexed: 11/16/2022]
Abstract
Two-dimensional (2D) materials may play an important role in future photodetectors due to their natural atom-thin body thickness, unique quantum confinement, and excellent electronic and photoelectric properties. Semimetallic graphene, semiconductor black phosphorus, and transition metal dichalcogenides possess flexible and adjustable bandgaps, which correspond to a wide interaction spectrum ranging from ultraviolet to terahertz. Nevertheless, their absorbance is relatively low, and it is difficult for a single material to cover a wide spectrum. Therefore, the combination of phototransistors based on 2D hybrid structures with other material platforms, such as quantum dots, organic materials, or plasma nanostructures, exhibit ultra-sensitive and broadband optical detection capabilities that cannot be ascribed to the individual constituents of the assembly. This article provides a comprehensive and systematic review of the recent research progress of 2D material photodetectors. First, the fundamental detection mechanism and key metrics of the 2D material photodetectors are introduced. Then, the latest developments in 2D material photodetectors are reviewed based on the strategies of photocurrent enhancement. Finally, a design and implementation principle for high-performance 2D material photodetectors is provided, together with the current challenges and future outlooks.
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Affiliation(s)
- Cheng Yang
- School of Physics and Electronics, Shandong Normal University, Jinan 250014, China;
- Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, NY 14260, USA;
- Correspondence: (C.Y.); (H.L.)
| | - Guangcan Wang
- School of Physics and Electronics, Shandong Normal University, Jinan 250014, China;
| | - Maomao Liu
- Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, NY 14260, USA;
| | - Fei Yao
- Department of Materials Design and Innovation, University at Buffalo, The State University of New York, Buffalo, NY 14260, USA;
| | - Huamin Li
- Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, NY 14260, USA;
- Correspondence: (C.Y.); (H.L.)
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