Large-Scale Synthesis of Strain-Tunable Semiconducting Antimonene on Copper Oxide

Epitaxial Growth of Large-Scale α-Phase Antimonene

Two-dimensional materials composed of elements from the 15th group of the periodic table remain largely unexplored. The primary challenge in advancing this research is the lack of large-scale layers that would facilitate extensive studies using laterally averaging techniques and enable functionalization for the fabrication of novel electronic, optoelectronic, and spintronic devices. In this report, we present a method for synthesizing large-scale antimonene layers, on the order of cm2. By employing molecular beam epitaxy, we successfully grow a monolayer film of α-phase antimonene on a W(110) surface passivated with a single-atom-thick layer of Sb atoms. The formation of α phase antimonene is confirmed through scanning tunneling microscopy and low-energy electron diffraction measurements. The isolated nature of the α-phase is further evidenced in the electronic structure, with linearly dispersed bands observed through angle-resolved photoelectron spectroscopy and supported by ab initio calculations.

Growth of Single Crystalline 2D Materials beyond Graphene on Non-metallic Substrates

The advent of 2D materials has ushered in the exploration of their synthesis, characterization and application. While plenty of 2D materials have been synthesized on various metallic substrates, interfacial interaction significantly affects their intrinsic electronic properties. Additionally, the complex transfer process presents further challenges. In this context, experimental efforts are devoted to the direct growth on technologically important semiconductor/insulator substrates. This review aims to uncover the effects of substrate on the growth of 2D materials. The focus is on non-metallic substrate used for epitaxial growth and how this highlights the necessity for phase engineering and advanced characterization at atomic scale. Special attention is paid to monoelemental 2D structures with topological properties. The conclusion is drawn through a discussion of the requirements for integrating 2D materials with current semiconductor-based technology and the unique properties of heterostructures based on 2D materials. Overall, this review describes how 2D materials can be fabricated directly on non-metallic substrates and the exploration of growth mechanism at atomic scale.

A Comprehensive Review on Electrocatalytic Applications of 2D Metallenes

This review introduces metallenes, a cutting-edge form of atomically thin two-dimensional (2D) metals, gaining attention in energy and catalysis. Their unique physicochemical and electronic properties make them promising for applications like catalysis. Metallenes stand out due to their abundance of under-coordinated metal atoms, enhancing the catalytic potential by improving atomic utilization and intrinsic activity. This review explores the utility of 2D metals as electrocatalysts in sustainable energy conversion, focusing on the Oxygen Evolution Reaction, Oxygen Reduction Reaction, Fuel Oxidation Reaction, and Carbon Dioxide Reduction Reaction. Aimed at researchers in nanomaterials and energy, the review is a comprehensive resource for unlocking the potential of 2D metals in creating a sustainable energy landscape.

Tunable Electronic Transport of New-Type 2D Iodine Materials Affected by the Doping of Metal Elements

2D iodine structures under high pressures are more attractive and valuable due to their special structures and excellent properties. Here, electronic transport properties of such 2D iodine structures are theoretically studied by considering the influence of the metal-element doping. In equilibrium, metal elements in Group 1 can enhance the conductance dramatically and show a better enhancement effect. Around the Fermi level, the transmission probability exceeds 1 and can be improved by the metal-element doping for all devices. In particular, the device density of states explains well the distinctions between transmission coefficients originating from different doping methods. Contrary to the "big" site doping, the "small" site doping changes transmission eigenstates greatly, with pronounced electronic states around doped atoms. In non-equilibrium, the conductance of all devices is almost weaker than the equilibrium conductance, decreasing at low voltages and fluctuating at high voltages with various amplitudes. Under biases, K-big doping shows the optimal enhancement effect, and Mg-small doping exhibits the most effective attenuation effect on conductance. Contrastingly, the currents of all devices increase with bias linearly. The metal-element doping can boost current at low biases and weaken current at high voltages. These findings contribute much to understanding the effects of defects on electronic properties and provide solid support for the application of new-type 2D iodine materials in controllable electronics and sensors.

Mechanical characteristics and failure behavior of puckered and buckled allotropes of antimonene nanotubes: a molecular dynamics study

In recent years, antimonene nanotubes have attracted considerable interest for diverse applications owing to their promising physical properties. In this study, classical molecular dynamics simulations with Stillinger-Weber potential were carried out to explore the fundamental mechanical characteristics of two stable allotropes of antimonene nanotubes (SbNTs), namely puckered (α-) and buckled (β-) nanotubes. Mechanical properties and deformation mechanisms of antimonene nanotubes, including ultimate tensile strength, fracture strain, and Young's modulus, were thoroughly examined by considering chirality, diameter, temperature, and strain rate variables. Numerical simulations revealed that all SbNT specimens examined in this study exhibit brittle failures with a complete loss of load-bearing capability following the ultimate stress level. The brittle nature of the SbNTs with varied diameters remained unchanged under different temperatures and loading-rate conditions. Owing to their distinct crystal structure in the armchair and zigzag directions, α-SbNTs present a distinctive anisotropic behavior compared to β-SbNTs. While the variation of the elastic modulus with temperature is not notable, the tensile strength and fracture strain of SbNTs deteriorated considerably at high temperatures. Furthermore, it was observed that the effects of diameter and temperature on zigzag α-SbNT are more pronounced due to its lower stability. Altogether, this study presents a comprehensive examination of the mechanical characteristics of the two stable antimonene allotropes and provides useful information for their potential utilizations in a wide range of applications.

Advances in the synthesis and modification of two-dimensional antimonene

Antimonene with a honeycomb layered structure has great application prospects in a wide spectrum of domains due to its high carrier mobility, high thermal conductivity, and layer-dependent electrical properties. Since the first successful synthesis of antimonene by epitaxy in 2015, various fabrication methods have been proposed successively. Herein, several representative synthetic methods are described in detail, including mechanical exfoliation, epitaxial growth, liquid-phase exfoliation, electrochemical exfoliation, etc. In addition, band engineering via modification strategies of antimonene, particularly intercalation and doping, is discussed based on available theoretical studies. By comparing the achieved structure characteristics and performances of these different synthesis and modification strategies, we present promising future developments and critical challenges for antimonene.

Antimonene: a tuneable post-graphene material for advanced applications in optoelectronics, catalysis, energy and biomedicine

The post-graphene era is undoubtedly marked by two-dimensional (2D) materials such as quasi-van der Waals antimonene. This emerging material has a fascinating structure, exhibits a pronounced chemical reactivity (in contrast to graphene), possesses outstanding electronic properties and has been postulated for a plethora of applications. However, chemistry and physics of antimonene remain in their infancy, but fortunately recent discoveries have shed light on its unmatched allotropy and rich chemical reactivity offering a myriad of unprecedented possibilities in terms of fundamental studies and applications. Indeed, antimonene can be considered as one of the most appealing post-graphene 2D materials reported to date, since its structure, properties and applications can be chemically engineered from the ground up (both using top-down and bottom-up approaches), offering an unprecedented level of control in the realm of 2D materials. In this review, we provide an in-depth analysis of the recent advances in the synthesis, characterization and applications of antimonene. First, we start with a general introduction to antimonene, and then we focus on its general chemistry, physical properties, characterization and synthetic strategies. We then perform a comprehensive study on the allotropy, the phase transition mechanisms, the oxidation behaviour and chemical functionalization. From a technological point of view, we further discuss the applications recently reported for antimonene in the fields of optoelectronics, catalysis, energy storage, cancer therapy and sensing. Finally, important aspects such as new scalable methodologies or the promising perspectives in biomedicine are discussed, pinpointing antimonene as a cutting-edge material of broad interest for researchers working in chemistry, physics, materials science and biomedicine.

Two-dimensional IV-VA3 monolayers with enhanced charge mobility for high-performance solar cells

High-performance photovoltaics (PVs) constitute a subject of extensive research efforts, in which silicon (Si)-based solar cells (SCs) have been widely commercialized. However, the low carrier mobility of Si-based SCs can limit the effective charge separation, thereby negatively impacting the device performance. Here, via calculating the physicochemical and PV performance based on density functional theory, we demonstrate SCs based on two-dimensional (2D) group IV and V compounds with an AX₃ configuration. Firstly, the cleavage energies of AX₃ (A = Si, Ge; X = P, As, and Sb) are calculated to be less than 1 J m^-2, providing an experimental feasibility to be exfoliated from the corresponding bulk. Secondly, electronic and optical properties have been systematically investigated. To be specific, the band gap of monolayer AX₃ falls in the range of 1.11-1.27 eV, which is comparable with that of Si. Significantly, the electron mobility of monolayer AX₃ can reach as high as ∼30 000 cm² V^-1 s^-1, which is one order of magnitude higher than that of Si. Furthermore, the optical absorbance of monolayer SiAs₃, SiP₃ and GeAs₃ exhibits high coefficients in visible light. Therefore, we believe that our designed AX₃-based PV systems with power conversion efficiency of 20% can offer great potential in the application of high-performance two-dimension-based PVs.

Edge stabilities, properties and growth kinetics of graphene-like two dimensional monolayers composed with Group 15 elements

Graphene-like two dimensional (2D) monolayers composed of β-structured Group 15 (β-G15) elements have attracted great attention due to their intrinsic bandgaps, thermodynamic stabilities and high mobilities. Quite different from graphene, a buckle with amplitude ranging from 1.24 Å to 1.65 Å exists along the z direction in β-G15 films. To learn the growth behaviours and the relevant influence of such buckles, here, we performed a systematic study on the edge stabilities of monolayer films constructed with β-phase P, As, Sb and Bi, respectively. Our theoretical results show that, for free-standing films, the zigzag edge with dangling atoms is the most stable one for bare P, As and Sb and the pristine AC edge is the most stable one for Bi, while the pristine zigzag edge becomes the most stable one for all films if the edge is terminated with hydrogen atoms, both resulting in hexagonal flakes under equilibrium growth conditions. Buckles show no apparent influence on the edge stabilities in free-standing films while play a significant role in cases considering underlying metal substrates. Such an influence can be attributed to the charge transfer difference between the lower/upper β-G15 atoms and underlying substrates, which may eventually determine the growth mechanism and morphologies of 2D β-G15 films. Detailed growth kinetics and properties were also discussed based on the first-principles results. The understanding of these fundamental principles should provide useful information for guiding the synthesis of β-G15 films and other 2D materials.

Topological Proximity-Induced Dirac Fermion in Two-Dimensional Antimonene

Antimonene is a promising two-dimensional (2D) material that is calculated to have a significant fundamental bandgap usable for advanced applications such as field-effect transistors, photoelectric devices, and the quantum-spin Hall (QSH) state. Herein, we demonstrate a phenomenon termed topological proximity effect, which occurs between a 2D material and a three-dimensional (3D) topological insulator (TI). We provide strong evidence derived from hydrogen etching on Sb₂Te₃ that large-area and well-ordered antimonene presents a 2D topological state. Delicate analysis with a scanning tunneling microscope of the evolutionary intermediates reveals that hydrogen etching on Sb₂Te₃ resulted in the formation of a large area of antimonene with a buckled structure. A topological state formed in the antimonene/Sb₂Te₃ heterostructure was confirmed with angle-resolved photoemission spectra and density-functional theory calculations; in particular, the Dirac point was located almost at the Fermi level. The results reveal that Dirac fermions are indeed realized at the interface of a 2D normal insulator (NI) and a 3D TI as a result of strong hybridization between antimonene and Sb₂Te₃. Our work demonstrates that the position of the Dirac point and the shape of the Dirac surface state can be tuned by varying the energy position of the NI valence band, which modifies the direction of the spin texture of Sb-BL/Sb₂Te₃ via varying the Fermi level. This topological phase in 2D-material engineering has generated a paradigm in that the topological proximity effect at the NI/TI interface has been realized, which demonstrates a way to create QSH systems in 2D-material TI heterostructures.

Polymorphism in Post-Dichalcogenide Two-Dimensional Materials

Two-dimensional (2D) materials exhibit a wide range of atomic structures, compositions, and associated versatility of properties. Furthermore, for a given composition, a variety of different crystal structures (i.e., polymorphs) can be observed. Polymorphism in 2D materials presents a fertile landscape for designing novel architectures and imparting new functionalities. The objective of this Review is to identify the polymorphs of emerging 2D materials, describe their polymorph-dependent properties, and outline methods used for polymorph control. Since traditional 2D materials (e.g., graphene, hexagonal boron nitride, and transition metal dichalcogenides) have already been studied extensively, the focus here is on polymorphism in post-dichalcogenide 2D materials including group III, IV, and V elemental 2D materials, layered group III, IV, and V metal chalcogenides, and 2D transition metal halides. In addition to providing a comprehensive survey of recent experimental and theoretical literature, this Review identifies the most promising opportunities for future research including how 2D polymorph engineering can provide a pathway to materials by design.

Structural and mechanical properties of antimonene monolayers doped with transition metals: a DFT-based study

In the current study, the elastic and plastic properties of the 2 × 2 and 3 × 3 pristine and transition metal (TM)-doped antimonene are studied through DFT calculations. Sc, Ti, V, Cr, Fe, Co, Ni, Cu, and Zn atoms are selected as the doping atoms. It was observed that Young's and bulk moduli of both 2 × 2 and 3 × 3 pristine structure would decrease while affected by the doping atoms. The highest reduction in the Young's and bulk moduli of the 2 × 2 nanosheets has occurred in the Cr- and Ti-doped structures, respectively, while the same reduction was observed in the V- and Ti-doped structures in the 3 × 3 nanosheets. In addition, it was shown that all of the investigated structures express isotropic behavior since the obtained Young's moduli of these nanostructures have negligible difference along armchair and zigzag directions. Finally, the loading is further increased to investigate the plastic behavior of these structures. The results showed that except for 2 × 2 Sc-doped structure under biaxial loading, the yield strain of all doped nanosheets would decrease under uniaxial and biaxial loadings. The highest reduction in the yield strain of the 2 × 2 nanosheets under biaxial loading has been observed in Cu-doped nanosheet while in 3 × 3 nanosheets, the highest reduction has occurred in Cu-, Fe-, and Zn-doped nanosheets under the same condition. As for the yield strain of the doped 2 × 2 nanosheets while affected by the uniaxial loading, Cu- and Zn-doped nanosheets experienced the highest reduction while in 3 × 3 nanosheets, the highest reduction has been observed for Cr-doped nanosheet under the same condition.

Kinetics-Limited Two-Step Growth of van der Waals Puckered Honeycomb Sb Monolayer

Puckered honeycomb Sb monolayer, the structural analog of black phosphorene, has been recently successfully grown by means of molecular beam epitaxy. However, little is known to date about the growth mechanism for such a puckered honeycomb monolayer. In this study, by using scanning tunneling microscopy in combination with first-principles density functional theory calculations, we unveil that the puckered honeycomb Sb monolayer takes a kinetics-limited two-step growth mode. As the coverage of Sb increases, the Sb atoms first form the distorted hexagonal lattice as the half layer, and then the distorted hexagonal half-layer transforms into the puckered honeycomb lattice as the full layer. These results provide the atomic-scale insight in understanding the growth mechanism of puckered honeycomb monolayer and can be instructive to the direct growth of other monolayers with the same structure.

Benchmark Investigation of Band-Gap Tunability of Monolayer Semiconductors under Hydrostatic Pressure with Focus-On Antimony

In this paper, the band-gap tunability of three monolayer semiconductors under hydrostatic pressure was intensively investigated based on first-principle simulations with a focus on monolayer antimony (Sb) as a semiconductor nanomaterial. As the benchmark study, monolayer black phosphorus (BP) and monolayer molybdenum disulfide (MoS2) were also investigated for comparison. Our calculations showed that the band-gap tunability of the monolayer Sb was much more sensitive to hydrostatic pressure than that of the monolayer BP and MoS2. Furthermore, the monolayer Sb was predicted to change from an indirect band-gap semiconductor to a conductor and to transform into a double-layer nanostructure above a critical pressure value ranging from 3 to 5 GPa. This finding opens an opportunity for nanoelectronic, flexible electronics and optoelectronic devices as well as sensors with the capabilities of deep band-gap tunability and semiconductor-to-metal transition by applying mechanical pressure.

Realizing Few-Layer Iodinene for High-Rate Sodium-Ion Batteries

Elemental 2D materials with fascinating characteristics are regarded as an influential portion of the 2D family. Iodine is as a typical monoelemental molecular crystal and exhibits great prospects of applications. To realize 2D iodine, not only is it required to separate the weak interlayer van der Waals interactions, but also to reserve the weak intramolecular halogen bonds; thus, 2D iodine is still unexploited until now. Herein, atomically thin iodine nanosheets (termed "iodinene") with the thickness around 1.0 nm and lateral sizes up to hundreds of nanometers are successfully fabricated by a liquid-phase exfoliation strategy. When used for the cathode of rechargeable sodium-ion batteries, the ultrathin iodinene exhibits superb rate properties with a high specific capacity of 109.5 mA h g^-1 at the high rate of 10 A g^-1 owing to its unique 2D ultrathin architecture with remarkably enhanced pseudocapacitive behavior. First-principles calculations reveal that the diffusion of sodium ions in few-layered iodinene changes from the original horizontal direction in bulk to the vertical with a small energy barrier of 0.07 eV because of the size effect. The successful preparation and intensive structural investigation of iodinene paves the way for the development of novel iodine-based science and technologies.

Anisotropic Transport Property of Antimonene MOSFETs

As silicon-based electronic devices rapidly reach their scaling limits, novel two-dimensional (2D) semiconductors, such as graphene nanoribbon, transition metal dichalcogenides, and phosphorene, are becoming promising channel materials. Antimonene has been proved suitable for ultrascaled field-effect transistors (FETs) benefiting from its superior semiconducting properties. Considering that antimonene shows different effective mass from 0° (zigzag) to 30° (armchair), we have calculated the anisotropic transport property of monolayer (ML) antimonene metal-oxide-semiconductor FET (MOSFETs), including on-state current, subthreshold swing, effective mass, intrinsic delay time, and power dissipation. Encouragingly, 0° (zigzag) and 19.1° directions ML antimonene MOSFETs with 4 nm gate length and 1 nm underlap achieve the International Technology Roadmap for Semiconductors (ITRS) high-performance (HP) goal in 2028. The performance of ML antimonene MOSFETs still can fulfill the ITRS HP goal, when the spin-orbit coupling effect is considered. The magnitude of on-state currents in all calculations generally varies inversely with the effective mass. Therefore, we predict that other transmission directions with effective masses between 0.291 and 0.388 m₀ can also achieve the ITRS HP goal, which enables antimonene to be a promising channel material.

Recent Advances in Tin: From Two-Dimensional Quantum Spin Hall Insulator to Bulk Dirac Semimetal

An atomic layer of tin in a buckled honeycomb lattice, termed stanene, is a promising large-gap two-dimensional topological insulator for realizing room-temperature quantum-spin-Hall effect and therefore has drawn tremendous interest in recent years. Because the electronic structures of Sn allotropes are sensitive to lattice strain, e.g. the semimetallic α-phase of Sn can transform into a three-dimensional topological Dirac semimetal under compressive strain, recent experimental advances have demonstrated that stanene layers on different substrates can also host various electronic properties relating to in-plane strain, interfacial charge transfer, layer thickness, and so on. Thus, comprehensive understanding of the growth mechanism at the atomic scale is highly desirable for precise control of such tunable properties. Herein, the fundamental properties of stanene and α-Sn films, recent achievements in epitaxial growth, challenges in high-quality synthesis, and possible applications of stanene are discussed.