An Integrated Flexible All-Nanowire Infrared Sensing System with Record Photosensitivity

Replicating CD Nanogrooves onto PDMS to Guide Nanowire Growth for Monolithic Flexible Photodetectors with High Bending-Stable UV-vis-NIR Photoresponse

Guided nanowires grown on polymer surfaces facilitate their seamless integration as flexible devices without post-growth processing steps. However, this is challenging due to the inability of polymer films to provide the required lattice-matching effect. In this work, this challenge is addressed by replicating highly aligned nanogrooves from a compact disc (CD) onto a casted flexible polydimethylsiloxane (PDMS) surface. Leveraging the replicated nanogrooves, copper hexadecafluorophthalocyanine (F16CuPc) and various metal phthalocyanines are guided into large-area, self-aligned nanowires. Subsequently, by employing specifically designed shadow masks during electrode deposition, these nanowires are seamlessly integrated as either a monolithic flexible photodetector with a large sensing area or on-chip flexible photodetector arrays. The resulting flexible photodetectors exhibit millisecond and long-term stable response to UV-vis-NIR light. Notably, they demonstrate exceptional bending stability, retaining stable and sensitive photoresponse even at a curvature radius as low as 0.5 cm and after enduring 1000 bending cycles. Furthermore, the photodetector array showcases consistent sensitivity and response speed across the entire array. This work not only proves the viability of guided nanowire growth on flexible polymer surfaces by replicating CD nanogrooves but also underscores the potential for large-scale monolithic integration of guided nanowires as flexible devices.

Flexible and Stretchable Light-Emitting Diodes and Photodetectors for Human-Centric Optoelectronics

Optoelectronic devices with unconventional form factors, such as flexible and stretchable light-emitting or photoresponsive devices, are core elements for the next-generation human-centric optoelectronics. For instance, these deformable devices can be utilized as closely fitted wearable sensors to acquire precise biosignals that are subsequently uploaded to the cloud for immediate examination and diagnosis, and also can be used for vision systems for human-interactive robotics. Their inception was propelled by breakthroughs in novel optoelectronic material technologies and device blueprinting methodologies, endowing flexibility and mechanical resilience to conventional rigid optoelectronic devices. This paper reviews the advancements in such soft optoelectronic device technologies, honing in on various materials, manufacturing techniques, and device design strategies. We will first highlight the general approaches for flexible and stretchable device fabrication, including the appropriate material selection for the substrate, electrodes, and insulation layers. We will then focus on the materials for flexible and stretchable light-emitting diodes, their device integration strategies, and representative application examples. Next, we will move on to the materials for flexible and stretchable photodetectors, highlighting the state-of-the-art materials and device fabrication methods, followed by their representative application examples. At the end, a brief summary will be given, and the potential challenges for further development of functional devices will be discussed as a conclusion.

Tunable Contacts of Bi2 O2 Se Nanosheets MSM Photodetectors by Metal-Assisted Transfer Approach for Self-Powered Near-Infrared Photodetection

Owing to the Fermi pinning effect arose in the metal electrodes deposition process, metal-semiconductor contact is always independent on the work function, which challenges the next-generation optoelectronic devices. In this work, a metal-assisted transfer approach is developed to transfer Bi2 O2 Se nanosheets onto the pre-deposited metal electrodes, benefiting to the tunable metal-semiconductor contact. The success in Bi2 O2 Se nanosheets transfer is contributed to the stronger van der Waals adhesion of metal electrodes than that of growth substrates. With the pre-deposited asymmetric electrodes, the self-powered near-infrared photodetectors are realized, demonstrating low dark current of 0.04 pA, high Ilight /Idark ratio of 380, fast rise and decay times of 4 and 6 ms, respectively, under the illumination of 1310 nm laser. By pre-depositing the metal electrodes on polyimide and glass, high-performance flexible and omnidirectional self-powered near-infrared photodetectors are achieved successfully. This study opens up new opportunities for low-dimensional semiconductors in next-generation high-performance optoelectronic devices.

Polarization Reversal of Group IV-VI Semiconductors with Pucker-Like Structure: Mechanism Dissecting and Function Demonstration

Polarization imaging presents advantages in capturing spatial, spectral, and polarization information across various spectral bands. It can improve the perceptual ability of image sensors and has garnered more applications. Despite its potential, challenges persist in identifying band information and implementing image enhancement using polarization imaging. These challenges often necessitate integrating spectrometers or other components, resulting in increased complexities within image processing systems and hindering device miniaturization trends. Here, the characteristics of anisotropic absorption reversal are systematically elucidated in pucker-like group IV-VI semiconductors MX (M = Ge, Sn; X = S, Se) through theoretical predictions and experimental validations. Additionally, the fundamental mechanisms behind anisotropy reversal in different bands are also explored. The photodetector is constructed by utilizing MX as a light-absorbing layer, harnessing polarization-sensitive photoresponse for virtual imaging. The results indicate that the utilization of polarization reversal photodetectors holds advantages in achieving further multifunctional integration within the device structure while simplifying its configuration, including band information identification and image enhancement. This study provides a comprehensive analysis of polarization reversal mechanisms and presents a promising and reliable approach for achieving dual-band image band identification and image enhancement without additional auxiliary components.

Self-Powered Photodetector Based on Ag/CH3NH3PbI3/C Asymmetric Dual-Terminal Device

CH3NH3PbI3 is capable of exhibiting a superior photoresponse to visible light, but its self-powered devices are typically formed through p-n junctions. In this study, we fabricated a Ag/CH3NH3PbI3/C dual-terminal asymmetric electrode device using a single CH3NH3PbI3 perovskite micro/nanowire, enabling both the photoresponse and self-powered characteristics of CH3NH3PbI3 to visible light. Compared with traditional p-n junction devices, this simple device demonstrates enhanced interface photovoltaic effects by optimizing the combination of the Ag electrode with CH3NH3PbI3, resulting in superior self-powered characteristics. Under low bias voltage, the device achieves a significant on/off ratio of 103, with superior sensitivity and responsivity as well as a maximum rectification ratio of about 12. The photogenerated voltage and current reach approximately 0.8 V and 2 nA, respectively. This simple, compact, and self-powered asymmetric device exhibits great potential for applications in self-powered optoelectronics and wearable devices. This research provides a promising approach for recognizing and utilizing surface state effects in single nanoscale structures.

MXene based flexible photodetectors: progress, challenges, and opportunities

The growing interest in applying 2D transition-metal carbides and nitrides (MXenes) to diverse application fields such as energy storage and harvesters, catalysts, sensors, optoelectronics, electromagnetic interference shielding and antennas since its first discovery in 2011 is clearly evident. Their intrinsic high conductivity limits the development of MXenes in photodetectors that rely on the semiconducting properties of active materials, while the abundant functional groups on the surface of MXenes provide opportunities for using MXenes as sensing materials in the fabrication of flexible photodetectors. Considerable studies on MXene based photodetectors have been carried out, but the main obstacles include seeking novel semiconducting materials in MXene families, the manufacturing technology, etc. This review highlights the progress, challenges and opportunities in MXene based flexible photodetectors and discusses novel materials, architectures, and approaches that capitalize on our growing understanding of MXenes.

Broadband Polarization-Sensitive Photodetection of Magnetic Semiconducting MnTe Nanoribbons

2D materials with low symmetry are explored in recent years because of their anisotropic advantage in polarization-sensitive photodetection. Herein the controllably grown hexagonal magnetic semiconducting α-MnTe nanoribbons are reported with a highly anisotropic (100) surface and their high sensitivity to polarization in a broadband photodetection, whereas the hexagonal structure is highly symmetric. The outstanding photoresponse of α-MnTe nanoribbons occurs in a broadband range from ultraviolet (UV, 360 nm) to near infrared (NIR, 914 nm) with short response times of 46 ms (rise) and 37 ms (fall), excellent environmental stability, and repeatability. Furthermore, due to highly anisotropic (100) surface, the α-MnTe nanoribbons as photodetector exhibit attractive sensitivity to polarization and high dichroic ratios of up to 2.8 under light illumination of UV-to-NIR wavelengths. These results demonstrate that 2D magnetic semiconducting α-MnTe nanoribbons provide a promising platform to design the next-generation polarization-sensitive photodetectors in a broadband range.

Constructing Carbon Nanotube Hybrid Fiber Electrodes with Unique Hierarchical Microcrack Structure for High-Voltage, Ultrahigh-Rate, and Ultralong-Life Flexible Aqueous Zinc Batteries

Flexible aqueous zinc batteries are promising candidates as safe power sources for fast-growing portable and wearable electronics. However, the low working voltage, poor rate capability, and cycling stability have greatly restricted their development and applications. Here, a new family of flexible bimetallic phosphide/carbon nanotube hybrid fiber electrodes with unique macroscopic microcrack structure and microscopic porous nanoflower structure is reported. The hierarchical microcrack structure not only facilitates the penetration of electrolyte for effective exposure of active sites, but also can serve as buffers to relieve the stress concentrations of the fiber electrode under deformations, enabling impressive electrochemical performance and mechanical flexibility. Particularly, the fabricated flexible aqueous zinc batteries demonstrate high working voltage plateau and specific capacity (≈1.7 V, 258.9 mAh g^-1 at 2 A g^-1 ), ultrahigh rate capability (135.8 mAh g^-1 at 50 A g^-1 , fully charged in only 9.8 s) and impressive power density of 79 000 W kg^-1 . Moreover, the flexible batteries show ultralong cycling life with 74.6% capacity retention after 20 000 cycles. The fiber batteries are also highly flexible and can be easily knitted into soft electronic textiles to power a smartphone, which are particularly promising for the next-generation of flexible and wearable electronics.

Flexible Optical Synapses Based on In2Se3/MoS2 Heterojunctions for Artificial Vision Systems in the Near-Infrared Range

Near-infrared (NIR) synaptic devices integrate NIR optical sensitivity and synaptic plasticity, emulating the basic biomimetic function of the human visual system and showing great potential in NIR artificial vision systems. However, the lack of semiconductor materials with appropriate band gaps for NIR photodetection and effective strategies for fabricating devices with synaptic behaviors limit the further development of NIR synaptic devices. Here, a two-terminal NIR synaptic device consisting of the In₂Se₃/MoS₂ heterojunction has been constructed, and it exhibits fundamental synaptic functions. The reduced band gap and potential barrier of In₂Se₃/MoS₂ heterojunctions are essential for NIR synaptic plasticity. In addition, the NIR synaptic properties of In₂Se₃/MoS₂ heterojunctions under strain have been studied systematically. The ΔEPSC of the In₂Se₃/MoS₂ synaptic device can be improved from 38.4% under no strain to 49.0% under a 0.54% strain with a 1060 nm illumination for 1 s at 100 mV. Furthermore, the artificial NIR vision system consisting of a 10 × 10 In₂Se₃/MoS₂ device array has been fabricated, exhibiting image sensing, learning, and storage functions under NIR illumination. This research provides new ideas for the design of flexible NIR synaptic devices based on 2D materials and presents many opportunities in artificial intelligence and NIR vision systems.

A Perovskite Photodetector Crossbar Array by Vapor Deposition for Dynamic Imaging

With the development of perovskite photodetectors, integrating photodetectors into array image sensors is the next target to pursue. The major obstacle to integrating perovskite photodiodes for dynamic imaging is the optoelectrical crosstalk among the pixels. Herein, a perovskite photodiode-blocking diode (PIN-BD) crossbar array with pixel-wise rectifying property by the vapor deposition method is presented. The PIN-BD shows a large rectification ratio of 3.3 × 10² under illumination, suppressing electrical crosstalk to as small as 8.0% in the imaging array. The fast response time of 72.8 ns allows real-time image acquisition by over 25 frames per second. The imaging sensor exhibits excellent imaging capability with a large linear dynamic range of 112 dB with 4096 gray levels and weak light sensitivity under 1.2 lux.

Split-Ring Structured All-Inorganic Perovskite Photodetector Arrays for Masterly Internet of Things

Photodetectors with long detection distances and fast response are important media in constructing a non-contact human-machine interface for the Masterly Internet of Things (MIT). All-inorganic perovskites have excellent optoelectronic performance with high moisture and oxygen resistance, making them one of the promising candidates for high-performance photodetectors, but a simple, low-cost and reliable fabrication technology is urgently needed. Here, a dual-function laser etching method is developed to complete both the lyophilic split-ring structure and electrode patterning. This novel split-ring structure can capture the perovskite precursor droplet efficiently and achieve the uniform and compact deposition of CsPbBr3 films. Furthermore, our devices based on laterally conducting split-ring structured photodetectors possess outstanding performance, including the maximum responsivity of 1.44 × 105 mA W-1, a response time of 150 μs in 1.5 kHz and one-unit area < 4 × 10-2 mm2. Based on these split-ring photodetector arrays, we realized three-dimensional gesture detection with up to 100 mm distance detection and up to 600 mm s-1 speed detection, for low-cost, integrative, and non-contact human-machine interfaces. Finally, we applied this MIT to wearable and flexible digital gesture recognition watch panel, safe and comfortable central controller integrated on the car screen, and remote control of the robot, demonstrating the broad potential applications.

Stiff Shape Memory Polymers for High-Resolution Reconfigurable Nanophotonics

Reconfigurable metamaterials require constituent nanostructures to demonstrate switching of shapes with external stimuli. Yet, a longstanding challenge is in overcoming stiction caused by van der Waals forces in the deformed configuration, which impedes shape recovery. Here, we introduce stiff shape memory polymers. This designer material has a storage modulus of ∼5.2 GPa at room temperature and ∼90 MPa in the rubbery state at 150 °C, 1 order of magnitude higher than those in previous reports. Nanopillars with diameters of ∼400 nm and an aspect ratio as high as ∼10 were printed by two-photon lithography. Experimentally, we observe shape recovery as collapsed and touching structures overcome stiction to stand back up. We develop a theoretical model to explain the recoverability of these sub-micrometer structures. Reconfigurable structural color prints with a resolution of 21150 dots per inch and holograms are demonstrated, indicating potential applications of the stiff shape memory polymers in high-resolution reconfigurable nanophotonics.

Perovskite-Based Memristor with 50-Fold Switchable Photosensitivity for In-Sensor Computing Neural Network

In-sensor computing can simultaneously output image information and recognition results through in-situ visual signal processing, which can greatly improve the efficiency of machine vision. However, in-sensor computing is challenging due to the requirement to controllably adjust the sensor’s photosensitivity. Herein, it is demonstrated a ternary cationic halide Cs_0.05FA_0.81MA_0.14 Pb(I_0.85Br_0.15)₃ (CsFAMA) perovskite, whose External quantum efficiency (EQE) value is above 80% in the entire visible region (400–750 nm), and peak responsibility value at 750 nm reaches 0.45 A/W. In addition, the device can achieve a 50-fold enhancement of the photoresponsibility under the same illumination by adjusting the internal ion migration and readout voltage. A proof-of-concept visually enhanced neural network system is demonstrated through the switchable photosensitivity of the perovskite sensor array, which can simultaneously optimize imaging and recognition results and improve object recognition accuracy by 17% in low-light environments.

Near-Infrared Polarimetric Image Sensors Based on Ordered Sulfur-Passivation GaSb Nanowire Arrays

The near-infrared polarimetric image sensor has a wide range of applications in the military and civilian fields, thus developing into a research hotspot in recent years. Because of their distinguishing 1D structure features, the ordered GaSb nanowire (NW) arrays possess potential applications for near-infrared polarization photodetection. In this work, single-crystalline GaSb NWs are synthesized through a sulfur-catalyzed chemical vapor deposition process. A sulfur-passivation thin layer is formed on the NW surface, which prevents the GaSb NW core from being oxidized. The photodetector based on sulfur-passivation GaSb (S-GaSb) NWs has a lower dark current and higher responsivity than that built with pure GaSb NWs. The photodetector exhibits a large responsivity of 9.39 × 10² A/W and an ultrahigh detectivity of 1.10 × 10¹¹ Jones for 1.55 μm incident light. Furthermore, the dichroic ratio of the device is measured to reach 2.65 for polarized 1.55 μm light. Through a COMSOL simulation, it is elucidated that the origin of the polarized photoresponse is the attenuation of a light electric field inside the NW when the angle of incident polarization light rotates. Moreover, a flexible polarimetric image sensor with 5 × 5 pixels is successfully constructed on the ordered S-GaSb NW arrays, and it exhibits a good imaging ability for incident near-infrared polarization light. These good photoresponse properties and polarized imaging abilities can empower ordered S-GaSb NW arrays with technological potentials in next-generation large-scale near-infrared polarimetric imaging sensors.

Schottky-Contacted High-Performance GaSb Nanowires Photodetectors Enabled by Lead-Free All-Inorganic Perovskites Decoration

The surface Fermi level pinning effect promotes the formation of metal-independent Ohmic contacts for the high-speed GaSb nanowires (NWs) electronic devices, however, it limits next-generation optoelectronic devices. In this work, lead-free all-inorganic perovskites with broad bandgaps and low work functions are adopted to decorate the surfaces of GaSb NWs, demonstrating the success in the construction of Schottky-contacts by surface engineering. Benefiting from the expected Schottky barrier, the dark current is reduced to 2 pA, the I_light /I_dark ratio is improved to 10³ and the response time is reduced by more than 15 times. Furthermore, a Schottky-contacted parallel array GaSb NWs photodetector is also fabricated by the contact printing technology, showing a higher photocurrent and a low dark current of 15 pA, along with the good infrared photodetection ability for a concealed target. All results guide the construction of Schottky-contacts by surface decorations for next-generation high-performance III-V NWs optoelectronics devices.

Integrated polarization-sensitive amplification system for digital information transmission

Polarized light can provide significant information about objects, and can be used as information carrier in communication systems through artificial modulation. However, traditional polarized light detection systems integrate polarizers and various functional circuits in addition to detectors, and are supplemented by complex encoding and decoding algorithms. Although the in-plane anisotropy of low-dimensional materials can be utilized to manufacture polarization-sensitive photodetectors without polarizers, the low anisotropic photocurrent ratio makes it impossible to realize digital output of polarized information. In this study, we propose an integrated polarization-sensitive amplification system by introducing a nanowire polarized photodetector and organic semiconductor transistors, which can boost the polarization sensitivity from 1.24 to 375. Especially, integrated systems are universal in that the systems can increase the anisotropic photocurrent ratio of any low-dimensional material corresponding to the polarized light. Consequently, a simple digital polarized light communication system can be realized based on this integrated system, which achieves certain information disguising and confidentiality effects.

Micro-Nano Processing of Active Layers in Flexible Tactile Sensors via Template Methods: A Review

Template methods are regarded as an important method for micro-nano processing in the active layer of flexible tactile sensors. These template methods use physical/chemical processes to introduce micro-nano structures on the active layer, which improves many properties including sensitivity, response/recovery time, and detection limit. However, since the processing process and applicable conditions of the template method have not yet formed a perfect system, the development and commercialization of flexible tactile sensors based on the template method are still at a relatively slow stage. Despite the above obstacles, advances in microelectronics, materials science, nanoscience, and other disciplines have laid the foundation for various template methods, enabling the continuous development of flexible tactile sensors. Therefore, a comprehensive and systematic review of flexible tactile sensors based on the template method is needed to further promote progress in this field. Here, the unique advantages and shortcomings of various template methods are summarized in detail and discuss the research progress and challenges in this field. It is believed that this review will have a significant impact on many fields of flexible electronics, which is beneficial to promote the cross-integration of multiple fields and accelerate the development of flexible electronic devices.

Embedding of Ti3 C2 Tx Nanocrystals in MAPbI3 Microwires for Improved Responsivity and Detectivity of Photodetector

Organic-inorganic hybrid MAPbI₃ microwires show unique optoelectronic properties for high performances of photodetectors (PDs). However, the defects-assisted nonradiative recombination is harmful for carrier transport, which limits the performances improvement of MAPbI₃ microwires PDs. Traditional organic passivation agents effectively combine the surface defects of microwires and also reduce the mobility of overall film based on the perovskite microwires. Therefore, the improvement of internal carrier transport of microwires and the mobility of integrated film simultaneously is a particular challenge for fabrication of performances enhanced perovskite microwires PDs. Here, the Ti₃ C₂ T_x NCs are fabricated by nonfocus laser irradiation in liquid environment, and hybrids the high conductive NCs in the MAPbI₃ microwires. The presence of Ti₃ C₂ T_x NCs renders defects passivation, enhancement of crystalline orientation, charge transport, and carrier extraction for MAPbI₃ microwires, and boots the mobility of microwires based film, leading to about tenfolds enhancement of performances of PDs than that of the control. The maximum responsivity and the detectivity of the Ti₃ C₂ T_x NCs embedded MAPbI₃ microwires PDs reach to 1.70 A W^-1 and 7.0 × 10¹¹ Jones in visible window, respectively. The findings suggest that the laser generated high conductive Ti₃ C₂ T_x NCs is an effective additive for perovskite microwires to fabricate performances enhanced optoelectronics.

Excellent optoelectronic applications and electrical transport behavior of the n-WO3nanostructures/p-diamond heterojunction: a new perspective

Nanostructured n-type metal oxides/p-type boron-doped diamond heterojunctions have demonstrated a typical rectification feature and/or negative differential resistance (NDR) potentially applied in wide fields. Recently, the fabrication and electronic transport behavior of n-WO₃nanorods/p-diamond heterojunction at high temperatures were studied by Wanget al(2017Appl. Phys. Lett.110052106), which opened the door for optoelectronic applications that can operate at high-temperatures, high-power, and in various harsh environments. In this perspective, an overview was presented on the future directions, challenges and opportunities for the optoelectronic applications based on the n-WO₃nanostructures/p-diamond heterojunction. We focus, in particular, on the prospects for its high temperature NDR, UV photodetector, field emission emitters, photocatalyst and optical information storage for a wide range of new optoelectronic applications.

Scalable Assembly of Flexible Ultrathin All-in-One Zinc-Ion Batteries with Highly Stretchable, Editable, and Customizable Functions

Aqueous zinc-ion batteries (ZIBs) are considered to be a promising candidate for flexible energy storage devices due to their high safety and low cost. However, the scalable assembly of flexible ZIBs is still a challenge. Here, a scalable assembly strategy is developed to fabricate flexible ZIBs with an ultrathin all-in-one structure by combining blade coating with a rolling assembly process. Such a unique all-in-one integrated structure can effectively avoid the relative displacement or detachment between neighboring components to ensure continuous and effective ion- and/or loading-transfer capacity under external deformation, resulting in excellent structural and electrochemical stability. Furthermore, the ultrathin all-in-one ZIBs can be tailored and edited controllably into desired shapes and structures, further extending their editable, stretchable, and shape-customized functions. In addition, the ultrathin all-in-one ZIBs display the ability to integrate with perovskite solar cells to achieve an energy harvesting and storage integrated system. These enlighten a broad area of flexible ZIBs to be compatible with highly flexible and wearable electronics. The scaling-up assembly strategy provides a route to design other ultrathin all-in-one energy storage devices with stretchable, editable, and customizable behaviors.

A nanograting-based flexible and stretchable waveguide for tactile sensing

Based on the related characteristics of optical waveguide and flexible optical materials, a flexible and stretchable optical waveguide structure oriented to tactile perception is proposed. The sensing principle of optical waveguide is based on mechanical deformation caused by output light loss. It overcomes the shortcomings of traditional optical waveguide devices, which are unable to conform to irregular surface. The flexible and stretchable optical waveguide is fabricated with nanoreplica molding method, and it has been applied to the measurement of pressure and strain in the field of tactile sensing. The flexible and stretchable optical waveguide had a strain detection range of 0 to 12.5%, and the external force detection range is from 0 to 23 × 10-3 N.

Self-Powered Intelligent Human-Machine Interaction for Handwriting Recognition

Handwritten signatures widely exist in our daily lives. The main challenge of signal recognition on handwriting is in the development of approaches to obtain information effectively. External mechanical signals can be easily detected by triboelectric nanogenerators which can provide immediate opportunities for building new types of active sensors capable of recording handwritten signals. In this work, we report an intelligent human-machine interaction interface based on a triboelectric nanogenerator. Using the horizontal-vertical symmetrical electrode array, the handwritten triboelectric signal can be recorded without external energy supply. Combined with supervised machine learning methods, it can successfully recognize handwritten English letters, Chinese characters, and Arabic numerals. The principal component analysis algorithm preprocesses the triboelectric signal data to reduce the complexity of the neural network in the machine learning process. Further, it can realize the anticounterfeiting recognition of writing habits by controlling the samples input to the neural network. The results show that the intelligent human-computer interaction interface has broad application prospects in signature security and human-computer interaction.