1
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Cheng J, Cao H, Zhang S, Shao J, Yan W, Peng C, Yue F, Zhou Z. Enhanced Electric Field Minimizing Quasi-Fermi Level Splitting Deficit for High-Performance Tin-Lead Perovskite Solar Cells. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2410298. [PMID: 39394826 DOI: 10.1002/adma.202410298] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/16/2024] [Revised: 09/18/2024] [Indexed: 10/14/2024]
Abstract
The quasi-Fermi level splitting (QFLS) deficit caused by the non-radiative recombination at the interface of perovskite/electron transport layer (ETL) can lead to severe open-circuit voltage (VOC) loss and thus decreases the efficiency of perovskite solar cells (PSCs), however, has received limited attention in inverted tin-lead PSCs. Herein, the strategy of constructing an extra-electric field is presented by introducing ferroelectric polymer dipoles (FPD)-β-poly(1,1-difluoroethylene)-to suppress the QFLS deficit. The directional polarization of FPD can enhance the built-in electric field (BEF) and thus promote the charge transfer at the perovskite/ETL interface, which effectively suppresses non-radiative recombination. Furthermore, the incorporation of FPD facilitates high-quality crystallization of perovskite and reduces the surface energetic disorder. Therefore, the QFLS deficit in the perovskite/ETL half-stacked device is reduced from 62 to 27 meV after incorporating FPD, and the optimized device achieves an efficiency of 23.44% with a high VOC of 0.88 V. Additionally, the addition of FPD increases the activation energy for ion migration, which can reduce the effect of ion migration on the long-term stability of the device. Consequently, the FPD-incorporated device retains 88% of the initial efficiency after 1100 h of continuous illumination at the maximum power point (MPP).
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Affiliation(s)
- Jiahui Cheng
- Qingdao University of Science and Technology, Qingdao, 266042, China
| | - Huijie Cao
- Qingdao University of Science and Technology, Qingdao, 266042, China
| | - Shuming Zhang
- Qingdao University of Science and Technology, Qingdao, 266042, China
| | - Jie Shao
- Qingdao University of Science and Technology, Qingdao, 266042, China
| | - Wenjian Yan
- Qingdao University of Science and Technology, Qingdao, 266042, China
| | - Cheng Peng
- Qingdao University of Science and Technology, Qingdao, 266042, China
| | - Fang Yue
- Qingdao University of Science and Technology, Qingdao, 266042, China
- Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education), Nankai University, Tianjin, 300071, China
| | - Zhongmin Zhou
- Qingdao University of Science and Technology, Qingdao, 266042, China
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2
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Ma Y, Shan L, Ying Y, Shen L, Fu Y, Fei L, Lei Y, Yue N, Zhang W, Zhang H, Huang H, Yao K, Chu J. Day-Night imaging without Infrared Cutfilter removal based on metal-gradient perovskite single crystal photodetector. Nat Commun 2024; 15:7516. [PMID: 39209845 PMCID: PMC11362523 DOI: 10.1038/s41467-024-51762-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/08/2023] [Accepted: 08/19/2024] [Indexed: 09/04/2024] Open
Abstract
Day-Night imaging technology that obtains full-color and infrared images has great market demands for security monitoring and autonomous driving. The current mainstream solution relies on wide-spectrum silicon photodetectors combined with Infrared Cutfilter Removal, which increases complexity and failure rate. Here, we address these challenges by employing a perovskite photodetector based on Pb-Sn alloyed single crystal with a vertical bandgap-graded structure that presents variable-spectrum responses at different biases and extends the infrared detection range close to 1100 nm. Taking advantage of the Pb-Sn gradients in mobility and built-in field, the perovskite photodetector shows a large linear dynamic range of 177 dB. In addition, the optoelectronic characteristics feature long-term operational stability over a year. We further develop an imaging module prototype without Infrared Cutfilter Removal that exhibits excellent color fidelity with RGB color differences ranging from 0.48 to 2.46 under infrared interference and provides over 26-bit grayscale resolution in infrared imaging.
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Affiliation(s)
- Yao Ma
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, International Center of Future Science, Jilin University, Changchun, China
| | - Leting Shan
- Institute of Photovoltaics, School of Physics and Materials Science, Nanchang University, Nanchang, China
| | - Yiran Ying
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Liang Shen
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, International Center of Future Science, Jilin University, Changchun, China
| | - Yufeng Fu
- Institute of Photovoltaics, School of Physics and Materials Science, Nanchang University, Nanchang, China
| | - Linfeng Fei
- Institute of Photovoltaics, School of Physics and Materials Science, Nanchang University, Nanchang, China
| | - Yusheng Lei
- State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, China
| | - Nailin Yue
- College of Materials Science and Engineering, Electron Microscopy Center, Jilin University, Changchun, China
| | - Wei Zhang
- College of Materials Science and Engineering, Electron Microscopy Center, Jilin University, Changchun, China
| | - Hong Zhang
- State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, China
| | - Haitao Huang
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Kai Yao
- Institute of Photovoltaics, School of Physics and Materials Science, Nanchang University, Nanchang, China.
| | - Junhao Chu
- State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, China
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3
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Ma X, Wang N. Open-circuit voltage deficits in Tin-based perovskite solar cells. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:393002. [PMID: 38906134 DOI: 10.1088/1361-648x/ad5ad0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/19/2024] [Accepted: 06/21/2024] [Indexed: 06/23/2024]
Abstract
The power conversion efficiency of Pb-based single-junction perovskite solar cells (PSCs) has surpassed 26%; however, the biocompatibility concerns associated with Pb pose threats to both the environment and living organisms. Consequently, the development of Pb-free PSCs is imperative. Among the various alternatives to Pb-based PSCs, Sn-based PSCs have exhibited outstanding optoelectronic properties, showing great potential for large-scale manufacturing and commercialization. Nevertheless, there remains a significant efficiency gap between Sn-based and Pb-based PSCs. The disparity primarily stems from substantial open-circuit voltage (VOC) deficits in Sn-based PSCs, typically ranging from 0.4 to 0.6 V. The main reason ofVOCdeficits is severe non-radiative recombination losses, which are caused by the uncontrolled crystallization kinetics of Sn halide perovskites and the spontaneous oxidation of Sn2+. This review summarizes the reasons forVOCdeficits in Sn-based PSCs, and the corresponding strategies to mitigate these issues. Additionally, it outlines the persistent challenges and future prospects for Sn-based PSCs, providing guidance to assist researchers in developing more efficient and stable Sn-based perovskites.
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Affiliation(s)
- Xue Ma
- College of Physics, Jilin University, Changchun 130012, People's Republic of China
| | - Ning Wang
- College of Physics, Jilin University, Changchun 130012, People's Republic of China
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4
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Orr KP, Diao J, Dey K, Hameed M, Dubajić M, Gilbert HL, Selby TA, Zelewski SJ, Han Y, Fitzsimmons MR, Roose B, Li P, Fan J, Jiang H, Briscoe J, Robinson IK, Stranks SD. Strain Heterogeneity and Extended Defects in Halide Perovskite Devices. ACS ENERGY LETTERS 2024; 9:3001-3011. [PMID: 38911532 PMCID: PMC11190982 DOI: 10.1021/acsenergylett.4c00921] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/31/2024] [Revised: 05/13/2024] [Accepted: 05/20/2024] [Indexed: 06/25/2024]
Abstract
Strain is an important property in halide perovskite semiconductors used for optoelectronic applications because of its ability to influence device efficiency and stability. However, descriptions of strain in these materials are generally limited to bulk averages of bare films, which miss important property-determining heterogeneities that occur on the nanoscale and at interfaces in multilayer device stacks. Here, we present three-dimensional nanoscale strain mapping using Bragg coherent diffraction imaging of individual grains in Cs0.1FA0.9Pb(I0.95Br0.05)3 and Cs0.15FA0.85SnI3 (FA = formamidinium) halide perovskite absorbers buried in full solar cell devices. We discover large local strains and striking intragrain and grain-to-grain strain heterogeneity, identifying distinct islands of tensile and compressive strain inside grains. Additionally, we directly image dislocations with surprising regularity in Cs0.15FA0.85SnI3 grains and find evidence for dislocation-induced antiphase boundary formation. Our results shine a rare light on the nanoscale strains in these materials in their technologically relevant device setting.
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Affiliation(s)
- Kieran
W. P. Orr
- Department
of Physics, Cavendish Laboratory, University
of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, U.K.
- Department
of Chemical Engineering and Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge CB3 0AS, U.K.
| | - Jiecheng Diao
- Center
for Transformative Science, ShanghaiTech
University, Shanghai 201210, China
| | - Krishanu Dey
- Department
of Physics, Cavendish Laboratory, University
of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, U.K.
| | - Madsar Hameed
- School
of Engineering and Materials Science, Queen
Mary University of London, Mile End Road, London E1 4NS, U.K.
| | - Miloš Dubajić
- Department
of Chemical Engineering and Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge CB3 0AS, U.K.
| | - Hayley L. Gilbert
- Department
of Chemical Engineering and Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge CB3 0AS, U.K.
- Diamond
Light Source, Harwell Science and Innovation Campus, Fermi Avenue, Didcot OX11 0DE, U.K.
| | - Thomas A. Selby
- Department
of Chemical Engineering and Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge CB3 0AS, U.K.
| | - Szymon J. Zelewski
- Department
of Physics, Cavendish Laboratory, University
of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, U.K.
- Department
of Chemical Engineering and Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge CB3 0AS, U.K.
| | - Yutong Han
- Department
of Chemical Engineering and Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge CB3 0AS, U.K.
| | - Melissa R. Fitzsimmons
- Department
of Chemical Engineering and Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge CB3 0AS, U.K.
| | - Bart Roose
- Department
of Chemical Engineering and Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge CB3 0AS, U.K.
| | - Peng Li
- Diamond
Light Source, Harwell Science and Innovation Campus, Fermi Avenue, Didcot OX11 0DE, U.K.
| | - Jiadong Fan
- Center
for Transformative Science, ShanghaiTech
University, Shanghai 201210, China
| | - Huaidong Jiang
- Center
for Transformative Science, ShanghaiTech
University, Shanghai 201210, China
| | - Joe Briscoe
- School
of Engineering and Materials Science, Queen
Mary University of London, Mile End Road, London E1 4NS, U.K.
| | - Ian K. Robinson
- London
Centre
for Nanotechnology, University College London, London WC1E 6BT, U.K.
- Condensed
Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11793, United States
| | - Samuel D. Stranks
- Department
of Physics, Cavendish Laboratory, University
of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, U.K.
- Center
for Transformative Science, ShanghaiTech
University, Shanghai 201210, China
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5
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Yan W, Li C, Peng C, Tan S, Zhang J, Jiang H, Xin F, Yue F, Zhou Z. Hot-Carrier Cooling Regulation for Mixed Sn-Pb Perovskite Solar Cells. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2312170. [PMID: 38245819 DOI: 10.1002/adma.202312170] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/14/2023] [Revised: 01/11/2024] [Indexed: 01/22/2024]
Abstract
The rapid relaxation of hot carriers leads to energy loss in the form of heat and consequently restricts the theoretical efficiency of single-junction solar cells; However, this issue has not received much attention in tin-lead perovskites solar cells. Herein, tin(II) oxalate (SnC2O4) is introduced into tin-lead perovskite precursor solution to regulate hot-carrier cooling dynamics. The addition of SnC2O4 increases the length of carrier diffusion, extends the lifetime of carriers, and simultaneously slows down the cooling rate of carriers. Furthermore, SnC2O4 can bond with uncoordinated Sn2+ and Pb2+ ions to regulate the crystallization of perovskite and enable large grains. The strongly reducing properties of the C2O4 2- can inhibit the oxidation of Sn2+ to Sn4+ and minimize the formation of Sn vacancies in the resulting perovskite films. Additionally, as a substitute for tin(II) fluoride, the introduction of SnC2O4 avoids the carrier transport issues caused by the aggregation of F- ions at the interface. As a result, the SnC2O4-treated Sn-Pb cells show a champion efficiency of 23.36%, as well as 27.56% for the all-perovskite tandem solar cells. Moreover, the SnC2O4-treated devices show excellent long-term stability. This finding is expected to pave the way toward stable and highly efficient all-perovskite tandem solar cells.
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Affiliation(s)
- Wenjian Yan
- College of Chemistry and Molecular Engineering, Qingdao University of Science and Technology, Qingdao, 266042, China
| | - Chongwen Li
- Department of Electrical and Computer Engineering, University of Toronto, 35 St. George Street, Toronto, Ontario, M5S 1A4, Canada
| | - Cheng Peng
- College of Chemistry and Molecular Engineering, Qingdao University of Science and Technology, Qingdao, 266042, China
| | - Shuchen Tan
- College of Chemistry and Molecular Engineering, Qingdao University of Science and Technology, Qingdao, 266042, China
| | - Jiakang Zhang
- College of Chemistry and Molecular Engineering, Qingdao University of Science and Technology, Qingdao, 266042, China
| | - Haokun Jiang
- College of Chemistry and Molecular Engineering, Qingdao University of Science and Technology, Qingdao, 266042, China
| | - Feifei Xin
- College of Chemistry and Molecular Engineering, Qingdao University of Science and Technology, Qingdao, 266042, China
| | - Fang Yue
- College of Chemistry and Molecular Engineering, Qingdao University of Science and Technology, Qingdao, 266042, China
| | - Zhongmin Zhou
- College of Chemistry and Molecular Engineering, Qingdao University of Science and Technology, Qingdao, 266042, China
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6
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Roose B, Dey K, Fitzsimmons MR, Chiang YH, Cameron PJ, Stranks SD. Electrochemical Impedance Spectroscopy of All-Perovskite Tandem Solar Cells. ACS ENERGY LETTERS 2024; 9:442-453. [PMID: 38356934 PMCID: PMC10863385 DOI: 10.1021/acsenergylett.3c02018] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/25/2023] [Revised: 12/20/2023] [Accepted: 12/21/2023] [Indexed: 02/16/2024]
Abstract
This work explores electrochemical impedance spectroscopy to study recombination and ionic processes in all-perovskite tandem solar cells. We exploit selective excitation of each subcell to enhance or suppress the impedance signal from each subcell, allowing study of individual tandem subcells. We use this selective excitation methodology to show that the recombination resistance and ionic time constants of the wide gap subcell are increased with passivation. Furthermore, we investigate subcell-dependent degradation during maximum power point tracking and find an increase in recombination resistance and a decrease in capacitance for both subcells. Complementary optical and external quantum efficiency measurements indicate that the main driver for performance loss is the reduced capacity of the recombination layer to facilitate recombination due to the formation of a charge extraction barrier. This methodology highlights electrochemical impedance spectroscopy as a powerful tool to provide critical feedback to unlock the full potential of perovskite tandem solar cells.
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Affiliation(s)
- Bart Roose
- Department
of Chemical Engineering and Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge CB3 0AS, U.K.
| | - Krishanu Dey
- Department
of Physics, Cavendish Laboratory, University
of Cambridge, 19 JJ Thomson
Avenue, Cambridge CB3 0HE, U.K.
| | - Melissa R Fitzsimmons
- Department
of Chemical Engineering and Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge CB3 0AS, U.K.
| | - Yu-Hsien Chiang
- Department
of Physics, Cavendish Laboratory, University
of Cambridge, 19 JJ Thomson
Avenue, Cambridge CB3 0HE, U.K.
| | - Petra J Cameron
- Department
of Chemistry, University of Bath, Claverton Down, Bath BA2
7AY, U.K.
| | - Samuel D Stranks
- Department
of Chemical Engineering and Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge CB3 0AS, U.K.
- Department
of Physics, Cavendish Laboratory, University
of Cambridge, 19 JJ Thomson
Avenue, Cambridge CB3 0HE, U.K.
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7
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Dey K, Ghosh D, Pilot M, Pering SR, Roose B, Deswal P, Senanayak SP, Cameron PJ, Islam MS, Stranks SD. Substitution of lead with tin suppresses ionic transport in halide perovskite optoelectronics. ENERGY & ENVIRONMENTAL SCIENCE 2024; 17:760-769. [PMID: 38269299 PMCID: PMC10805128 DOI: 10.1039/d3ee03772j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/04/2023] [Accepted: 11/23/2023] [Indexed: 01/26/2024]
Abstract
Despite the rapid rise in the performance of a variety of perovskite optoelectronic devices with vertical charge transport, the effects of ion migration remain a common and longstanding Achilles' heel limiting the long-term operational stability of lead halide perovskite devices. However, there is still limited understanding of the impact of tin (Sn) substitution on the ion dynamics of lead (Pb) halide perovskites. Here, we employ scan-rate-dependent current-voltage measurements on Pb and mixed Pb-Sn perovskite solar cells to show that short circuit current losses at lower scan rates, which can be traced to the presence of mobile ions, are present in both kinds of perovskites. To understand the kinetics of ion migration, we carry out scan-rate-dependent hysteresis analyses and temperature-dependent impedance spectroscopy measurements, which demonstrate suppressed ion migration in Pb-Sn devices compared to their Pb-only analogues. By linking these experimental observations to first-principles calculations on mixed Pb-Sn perovskites, we reveal the key role played by Sn vacancies in increasing the iodide ion migration barrier due to local structural distortions. These results highlight the beneficial effect of Sn substitution in mitigating undesirable ion migration in halide perovskites, with potential implications for future device development.
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Affiliation(s)
- Krishanu Dey
- Cavendish Laboratory, University of Cambridge Cambridge UK
| | - Dibyajyoti Ghosh
- Department of Materials Science and Engineering and Department of Chemistry, Indian Institute of Technology Delhi Hauz Khas India
| | | | - Samuel R Pering
- Department of Materials, Loughborough University Loughborough UK
| | - Bart Roose
- Department of Chemical Engineering and Biotechnology, University of Cambridge Cambridge UK
| | - Priyanka Deswal
- Department of Physics, Indian Institute of Technology Delhi Hauz Khas India
| | - Satyaprasad P Senanayak
- Nanoelectronics and Device Physics Lab,School of Physical Sciences, National Institute of Science Education and Research, HBNI, Jatni India
| | | | | | - Samuel D Stranks
- Cavendish Laboratory, University of Cambridge Cambridge UK
- Department of Chemical Engineering and Biotechnology, University of Cambridge Cambridge UK
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8
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Zhang Z, Huang Y, Jin J, Jiang Y, Xu Y, Zhu J, Zhao D. Mechanistic Understanding of Oxidation of Tin-based Perovskite Solar Cells and Mitigation Strategies. Angew Chem Int Ed Engl 2023; 62:e202308093. [PMID: 37525424 DOI: 10.1002/anie.202308093] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/16/2023] [Revised: 07/30/2023] [Accepted: 07/31/2023] [Indexed: 08/02/2023]
Abstract
Tin (Sn)-based perovskites as the most promising absorber materials for lead-free perovskite solar cells (PSCs) have achieved the record efficiency of over 14 %. Although suppressing the oxidation of Sn-based perovskites is a frequently concerned topic for Sn-based PSCs, many studies have given vague explanations and the mechanisms are still under debate. This is in principal due to the lack of an in-depth understanding of various and complex intrinsic and extrinsic factors causing the oxidation process. In this context, we critically review the chemical mechanism of facile oxidation of Sn-based perovskites and differentiate its detrimental effects at material- and device-level. More importantly, we classify and introduce the intrinsic factors (raw materials and solvent of perovskite precursors) and extrinsic factors (exposure to neutral oxygen and superoxide) causing the oxidation with their corresponding anti-oxidation improvement methods. The presented comprehensive understanding and prospect of the oxidation provide insightful guidance for suppressing the oxidation in Sn-based PSCs "from the beginning to the end".
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Affiliation(s)
- Zhihao Zhang
- College of Materials Science and Engineering &, Engineering Research Center of Alternative Energy Materials & Devices, Ministry of Education, Sichuan University, Chengdu, 610065, China
| | - Yuanfang Huang
- College of Materials Science and Engineering &, Engineering Research Center of Alternative Energy Materials & Devices, Ministry of Education, Sichuan University, Chengdu, 610065, China
| | - Jialun Jin
- College of Materials Science and Engineering &, Engineering Research Center of Alternative Energy Materials & Devices, Ministry of Education, Sichuan University, Chengdu, 610065, China
| | - Yiting Jiang
- College of Materials Science and Engineering &, Engineering Research Center of Alternative Energy Materials & Devices, Ministry of Education, Sichuan University, Chengdu, 610065, China
| | - Yuliang Xu
- College of Materials Science and Engineering &, Engineering Research Center of Alternative Energy Materials & Devices, Ministry of Education, Sichuan University, Chengdu, 610065, China
| | - Jingwei Zhu
- College of Materials Science and Engineering &, Engineering Research Center of Alternative Energy Materials & Devices, Ministry of Education, Sichuan University, Chengdu, 610065, China
| | - Dewei Zhao
- College of Materials Science and Engineering &, Engineering Research Center of Alternative Energy Materials & Devices, Ministry of Education, Sichuan University, Chengdu, 610065, China
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9
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Qin Z, Qin M, Lu X. High-Efficiency Low-Lead Perovskite Photovoltaics Approaching 20% Enabled by a Vacuum-Drying Strategy. SMALL METHODS 2023; 7:e2300202. [PMID: 37148173 DOI: 10.1002/smtd.202300202] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/15/2023] [Revised: 04/11/2023] [Indexed: 05/08/2023]
Abstract
Lead-tin mixed perovskites are excellent photovoltaic materials that can be used in single- or multi-junction perovskite solar cells (PSCs). However, most high-performance Pb-Sn mixed PSCs reported to date are still Pb-dominant. It is highly demanding to develop environmentally friendly low-lead PSCs, but the poor film quality caused by the uncontrollable crystallization kinetics has been hindering the efficiency improvement of low-lead PSCs. Here, a vacuum-drying strategy in the two-step method to fabricate low-lead PSCs (FAPb0.3 Sn0.7 I3 ) with an impressive efficiency of 19.67% is employed. The vacuum treatment induces the formation of low crystalline Pb0.3 Sn0.7 I2 films containing less solvent, thus facilitating the subsequent FAI penetration and suppressing pinholes. Compared with the conventional one-step method, the two-step fabricated low-lead perovskite films with the vacuum-drying treatment exhibit a larger grain size, lower trap density, and weaker recombination loss, thus giving rise to a record-high efficiency near 20% with better thermal stability.
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Affiliation(s)
- Zhaotong Qin
- Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong SAR, 999077, P. R. China
| | - Minchao Qin
- Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong SAR, 999077, P. R. China
| | - Xinhui Lu
- Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong SAR, 999077, P. R. China
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10
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Qin Z, Pols M, Qin M, Zhang J, Yan H, Tao S, Lu X. Over-18%-Efficiency Quasi-2D Ruddlesden-Popper Pb-Sn Mixed Perovskite Solar Cells by Compositional Engineering. ACS ENERGY LETTERS 2023; 8:3188-3195. [PMID: 37469391 PMCID: PMC10353033 DOI: 10.1021/acsenergylett.3c00853] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/26/2023] [Accepted: 06/22/2023] [Indexed: 07/21/2023]
Abstract
Quasi-two-dimensional (2D) Pb-Sn mixed perovskites show great potential in applications of single and tandem photovoltaic devices, but they suffer from low efficiencies due to the existence of horizontal 2D phases. Here, we obtain a record high efficiency of 18.06% based on 2D ⟨n⟩ = 5 Pb-Sn mixed perovskites (iso-BA2MA4(PbxSn1-x)5I16, x = 0.7), by optimizing the crystal orientation through a regulation of the Pb/Sn ratio. We find that Sn-rich precursors give rise to a mixture of horizontal and vertical 2D phases. Interestingly, increasing the Pb content can not only entirely suppress the unwanted horizontal 2D phase in the film but also enhance the growth of vertical 2D phases, thus significantly improving the device performance and stability. It is suggested that an increase of the Pb content in the Pb-Sn mixed systems facilitates the incorporation of iso-butylammonium (iso-BA+) ligands in vertically oriented perovskites because of the reduced lattice strain and increased interaction between the organic ligands and inorganic framework. Our work sheds light on the optimal conditions for fabricating stable and efficient 2D Pb-Sn mixed perovskite solar cells.
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Affiliation(s)
- Zhaotong Qin
- Department
of Physics, The Chinese University of Hong
Kong, Shatin 999077, Hong Kong SAR, People’s Republic of China
| | - Mike Pols
- Materials
Simulation and Modelling, Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600MB Eindhoven, The Netherlands
| | - Minchao Qin
- Department
of Physics, The Chinese University of Hong
Kong, Shatin 999077, Hong Kong SAR, People’s Republic of China
| | - Jianquan Zhang
- Department
of Chemistry, Hong Kong University of Science
and Technology, Kowloon 999077, Hong Kong SAR, People’s Republic of China
| | - He Yan
- Department
of Chemistry, Hong Kong University of Science
and Technology, Kowloon 999077, Hong Kong SAR, People’s Republic of China
| | - Shuxia Tao
- Materials
Simulation and Modelling, Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600MB Eindhoven, The Netherlands
| | - Xinhui Lu
- Department
of Physics, The Chinese University of Hong
Kong, Shatin 999077, Hong Kong SAR, People’s Republic of China
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11
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Li P, Cao X, Li J, Jiao B, Hou X, Hao F, Ning Z, Bian Z, Xi J, Ding L, Wu Z, Dong H. Ligand Engineering in Tin-Based Perovskite Solar Cells. NANO-MICRO LETTERS 2023; 15:167. [PMID: 37395847 PMCID: PMC10317948 DOI: 10.1007/s40820-023-01143-0] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/05/2023] [Accepted: 06/11/2023] [Indexed: 07/04/2023]
Abstract
Perovskite solar cells (PSCs) have attracted aggressive attention in the photovoltaic field in light of the rapid increasing power conversion efficiency. However, their large-scale application and commercialization are limited by the toxicity issue of lead (Pb). Among all the lead-free perovskites, tin (Sn)-based perovskites have shown potential due to their low toxicity, ideal bandgap structure, high carrier mobility, and long hot carrier lifetime. Great progress of Sn-based PSCs has been realized in recent years, and the certified efficiency has now reached over 14%. Nevertheless, this record still falls far behind the theoretical calculations. This is likely due to the uncontrolled nucleation states and pronounced Sn (IV) vacancies. With insights into the methodologies resolving both issues, ligand engineering-assisted perovskite film fabrication dictates the state-of-the-art Sn-based PSCs. Herein, we summarize the role of ligand engineering during each state of film fabrication, ranging from the starting precursors to the ending fabricated bulks. The incorporation of ligands to suppress Sn2+ oxidation, passivate bulk defects, optimize crystal orientation, and improve stability is discussed, respectively. Finally, the remained challenges and perspectives toward advancing the performance of Sn-based PSCs are presented. We expect this review can draw a clear roadmap to facilitate Sn-based PSCs via ligand engineering.
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Affiliation(s)
- Peizhou Li
- Key Laboratory for Physical Electronics and Devices (MoE), Shaanxi Key Lab of Information Photonic Technique, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China
| | - Xiangrong Cao
- Key Laboratory for Physical Electronics and Devices (MoE), Shaanxi Key Lab of Information Photonic Technique, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China
| | - Jingrui Li
- Key Laboratory for Physical Electronics and Devices (MoE), Shaanxi Key Lab of Information Photonic Technique, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China
| | - Bo Jiao
- Key Laboratory for Physical Electronics and Devices (MoE), Shaanxi Key Lab of Information Photonic Technique, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China
| | - Xun Hou
- Key Laboratory for Physical Electronics and Devices (MoE), Shaanxi Key Lab of Information Photonic Technique, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China
| | - Feng Hao
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu, 611731, People's Republic of China
| | - Zhijun Ning
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, People's Republic of China
| | - Zuqiang Bian
- Beijing National Laboratory for Molecular Sciences, State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China
| | - Jun Xi
- Key Laboratory for Physical Electronics and Devices (MoE), Shaanxi Key Lab of Information Photonic Technique, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China.
| | - Liming Ding
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, People's Republic of China.
| | - Zhaoxin Wu
- Key Laboratory for Physical Electronics and Devices (MoE), Shaanxi Key Lab of Information Photonic Technique, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China.
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, 030006, People's Republic of China.
| | - Hua Dong
- Key Laboratory for Physical Electronics and Devices (MoE), Shaanxi Key Lab of Information Photonic Technique, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China.
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, 030006, People's Republic of China.
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12
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Senanayak SP, Dey K, Shivanna R, Li W, Ghosh D, Zhang Y, Roose B, Zelewski SJ, Andaji-Garmaroudi Z, Wood W, Tiwale N, MacManus-Driscoll JL, Friend RH, Stranks SD, Sirringhaus H. Charge transport in mixed metal halide perovskite semiconductors. NATURE MATERIALS 2023; 22:216-224. [PMID: 36702888 DOI: 10.1038/s41563-022-01448-2] [Citation(s) in RCA: 24] [Impact Index Per Article: 24.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/27/2022] [Accepted: 11/24/2022] [Indexed: 06/18/2023]
Abstract
Investigation of the inherent field-driven charge transport behaviour of three-dimensional lead halide perovskites has largely remained challenging, owing to undesirable ionic migration effects near room temperature and dipolar disorder instabilities prevalent specifically in methylammonium-and-lead-based high-performing three-dimensional perovskite compositions. Here, we address both these challenges and demonstrate that field-effect transistors based on methylammonium-free, mixed metal (Pb/Sn) perovskite compositions do not suffer from ion migration effects as notably as their pure-Pb counterparts and reliably exhibit hysteresis-free p-type transport with a mobility reaching 5.4 cm2 V-1 s-1. The reduced ion migration is visualized through photoluminescence microscopy under bias and is manifested as an activated temperature dependence of the field-effect mobility with a low activation energy (~48 meV) consistent with the presence of the shallow defects present in these materials. An understanding of the long-range electronic charge transport in these inherently doped mixed metal halide perovskites will contribute immensely towards high-performance optoelectronic devices.
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Affiliation(s)
- Satyaprasad P Senanayak
- Nanoelectronics and Device Physics Lab, National Institute of Science Education and Research, School of Physical Sciences, HBNI, Jatni, India.
| | - Krishanu Dey
- Optoelectronics Group, Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge, UK
| | - Ravichandran Shivanna
- Optoelectronics Group, Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge, UK
- Department of Physics, Indian Institute of Technology Madras, Chennai, India
| | - Weiwei Li
- Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, UK
- College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Nanjing University of Aeronautics and Astronautics, Nanjing, China
| | - Dibyajyoti Ghosh
- Department of Materials Science and Engineering, Department of Chemistry, Indian Institute of Technology Delhi, Hauz Khas, India
| | - Youcheng Zhang
- Optoelectronics Group, Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge, UK
- Cambridge Graphene Centre, Department of Engineering, University of Cambridge, Cambridge, UK
| | - Bart Roose
- Department of Chemical Engineering and Biotechnology, University of Cambridge, Cambridge, UK
| | - Szymon J Zelewski
- Optoelectronics Group, Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge, UK
- Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wrocław, Poland
| | - Zahra Andaji-Garmaroudi
- Optoelectronics Group, Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge, UK
| | - William Wood
- Optoelectronics Group, Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge, UK
| | - Nikhil Tiwale
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, USA
| | | | - Richard H Friend
- Optoelectronics Group, Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge, UK
| | - Samuel D Stranks
- Optoelectronics Group, Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge, UK.
- Department of Chemical Engineering and Biotechnology, University of Cambridge, Cambridge, UK.
| | - Henning Sirringhaus
- Optoelectronics Group, Department of Physics, Cavendish Laboratory, University of Cambridge, Cambridge, UK.
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13
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Rashidi M, Ghasemi F. Thermally oxidized MoS2-based hybrids as superior electrodes for supercapacitor and photoelectrochemical applications. Electrochim Acta 2022. [DOI: 10.1016/j.electacta.2022.141379] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
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14
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Nasti G, Aldamasy MH, Flatken MA, Musto P, Matczak P, Dallmann A, Hoell A, Musiienko A, Hempel H, Aktas E, Di Girolamo D, Pascual J, Li G, Li M, Mercaldo LV, Veneri PD, Abate A. Pyridine Controlled Tin Perovskite Crystallization. ACS ENERGY LETTERS 2022; 7:3197-3203. [PMID: 36277134 PMCID: PMC9578040 DOI: 10.1021/acsenergylett.2c01749] [Citation(s) in RCA: 15] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/03/2022] [Accepted: 08/23/2022] [Indexed: 05/09/2023]
Abstract
Controlling the crystallization of perovskite in a thin film is essential in making solar cells. Processing tin-based perovskite films from solution is challenging because of the uncontrollable faster crystallization of tin than the most used lead perovskite. The best performing devices are prepared by depositing perovskite from dimethyl sulfoxide because it slows down the assembly of the tin-iodine network that forms perovskite. However, while dimethyl sulfoxide seems the best solution to control the crystallization, it oxidizes tin during processing. This work demonstrates that 4-(tert-butyl) pyridine can replace dimethyl sulfoxide to control the crystallization without oxidizing tin. We show that tin perovskite films deposited from pyridine have a 1 order of magnitude lower defect density, which promotes charge mobility and photovoltaic performance.
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Affiliation(s)
- Giuseppe Nasti
- Department
of Chemical Materials and Production Engineering, University of Naples Federico II, Piazzale Vincenzo Tecchio 80, 80125 Naples, Italy
- Giuseppe
Nasti:
| | - Mahmoud Hussein Aldamasy
- Department
of Novel Materials and Interfaces for Photovoltaic Solar Cells, Helmholtz-Zentrum Berlin für Materialien und
Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin, Germany
- Egyptian
Petroleum Research Institute, 4441312 Cairo, Egypt
| | - Marion Alwine Flatken
- Department
of Novel Materials and Interfaces for Photovoltaic Solar Cells, Helmholtz-Zentrum Berlin für Materialien und
Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin, Germany
| | - Pellegrino Musto
- National
Research Council of Italy Institute for Polymers Composites and Biomaterials, Via Campi Flegrei 34, 80078 Pozzuoli (NA), Italy
| | - Piotr Matczak
- Faculty
of Chemistry, University of Łódź́́́, 90-149 Lodz, Poland
| | - André Dallmann
- Humboldt
Universität zu Berlin, Institut für Chemie, Brook-Taylor-Str. 2, 12489 Berlin, Germany
| | - Armin Hoell
- Department
of Novel Materials and Interfaces for Photovoltaic Solar Cells, Helmholtz-Zentrum Berlin für Materialien und
Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin, Germany
| | - Artem Musiienko
- Department
of Novel Materials and Interfaces for Photovoltaic Solar Cells, Helmholtz-Zentrum Berlin für Materialien und
Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin, Germany
| | - Hannes Hempel
- Department
of Novel Materials and Interfaces for Photovoltaic Solar Cells, Helmholtz-Zentrum Berlin für Materialien und
Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin, Germany
| | - Ece Aktas
- Department
of Chemical Materials and Production Engineering, University of Naples Federico II, Piazzale Vincenzo Tecchio 80, 80125 Naples, Italy
| | - Diego Di Girolamo
- Department
of Chemical Materials and Production Engineering, University of Naples Federico II, Piazzale Vincenzo Tecchio 80, 80125 Naples, Italy
| | - Jorge Pascual
- Department
of Novel Materials and Interfaces for Photovoltaic Solar Cells, Helmholtz-Zentrum Berlin für Materialien und
Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin, Germany
| | - Guixiang Li
- Department
of Novel Materials and Interfaces for Photovoltaic Solar Cells, Helmholtz-Zentrum Berlin für Materialien und
Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin, Germany
| | - Meng Li
- Key
Lab for Special Functional Materials of Ministry of Education, National
and Local Joint Engineering Research Center for High-Efficiency Display
and Lighting Technology, School of Materials Science and Engineering,
Collaborative Innovation Center of Nano Functional Materials and Applications, Henan University, Kaifeng 475004 China
| | - Lucia Vittoria Mercaldo
- Italian
National Agency for New Technologies, Energy and Sustainable Economic
Development (ENEA) - Portici Research Center, Piazzale E. Fermi, 80055 Portici (NA), Italy
| | - Paola Delli Veneri
- Italian
National Agency for New Technologies, Energy and Sustainable Economic
Development (ENEA) - Portici Research Center, Piazzale E. Fermi, 80055 Portici (NA), Italy
| | - Antonio Abate
- Department
of Chemical Materials and Production Engineering, University of Naples Federico II, Piazzale Vincenzo Tecchio 80, 80125 Naples, Italy
- Department
of Novel Materials and Interfaces for Photovoltaic Solar Cells, Helmholtz-Zentrum Berlin für Materialien und
Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin, Germany
- Antonio Abate:
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15
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Kahmann S, Chen Z, Hordiichuk O, Nazarenko O, Shao S, Kovalenko MV, Blake GR, Tao S, Loi MA. Compositional Variation in FAPb 1-xSn xI 3 and Its Impact on the Electronic Structure: A Combined Density Functional Theory and Experimental Study. ACS APPLIED MATERIALS & INTERFACES 2022; 14:34253-34261. [PMID: 35512221 PMCID: PMC9353781 DOI: 10.1021/acsami.2c00889] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Given their comparatively narrow band gap, mixed Pb-Sn iodide perovskites are interesting candidates for bottom cells in all-perovskite tandems or single junction solar cells, and their luminescence around 900 nm offers great potential for near-infrared optoelectronics. Here, we investigate mixed FAPb1-xSnxI3 offering the first accurate determination of the crystal structure over a temperature range from 293 to 100 K. We demonstrate that all compositions exhibit a cubic structure at room temperature and undergo at least two transitions to lower symmetry tetragonal phases upon cooling. Using density functional theory (DFT) calculations based on these structures, we subsequently reveal that the main impact on the band gap bowing is the different energy of the s and p orbital levels derived from Pb and Sn. In addition, this energy mismatch results in strongly composition-dependent luminescence characteristics. Whereas neat and Sn-rich compounds exhibit bright and narrow emission with a clean band gap, Sn-poor compounds intrinsically suffer from increased carrier recombination mediated by in-gap states, as evidenced by the appearance of pronounced low-energy photoluminescence upon cooling. This study is the first to link experimentally determined structures of FAPb1-xSnxI3 with the electronic properties, and we demonstrate that optoelectronic applications based on Pb-Sn iodide compounds should employ Sn-rich compositions.
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Affiliation(s)
- Simon Kahmann
- Photophysics
and OptoElectronics Group, Zernike Institute of Advanced Materials, University of Groningen, Nijenborgh 4, NL-9747
AG Groningen, The Netherlands
| | - Zehua Chen
- Materials
Simulation and Modelling, Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
- Center
for Computational Energy Research, Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
| | - Oleh Hordiichuk
- Department
of Chemistry and Applied Biosciences, ETH
Zürich, Vladimir Prelog Weg 1, CH-8093 Zürich, Switzerland
- EMPA-Swiss
Federal Laboratories for Materials Science and Technology, Überlandstraße 129, CH-8600 Dübendorf, Switzerland
| | - Olga Nazarenko
- Department
of Chemistry and Applied Biosciences, ETH
Zürich, Vladimir Prelog Weg 1, CH-8093 Zürich, Switzerland
- EMPA-Swiss
Federal Laboratories for Materials Science and Technology, Überlandstraße 129, CH-8600 Dübendorf, Switzerland
| | - Shuyan Shao
- Photophysics
and OptoElectronics Group, Zernike Institute of Advanced Materials, University of Groningen, Nijenborgh 4, NL-9747
AG Groningen, The Netherlands
| | - Maksym V. Kovalenko
- Department
of Chemistry and Applied Biosciences, ETH
Zürich, Vladimir Prelog Weg 1, CH-8093 Zürich, Switzerland
- EMPA-Swiss
Federal Laboratories for Materials Science and Technology, Überlandstraße 129, CH-8600 Dübendorf, Switzerland
| | - Graeme R. Blake
- Solid
State Materials for Electronics, Zernike Institute of Advanced Materials, University of Groningen, Nijenborgh 4, NL-9747
AG Groningen, The Netherlands
| | - Shuxia Tao
- Materials
Simulation and Modelling, Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
- Center
for Computational Energy Research, Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
| | - Maria A. Loi
- Photophysics
and OptoElectronics Group, Zernike Institute of Advanced Materials, University of Groningen, Nijenborgh 4, NL-9747
AG Groningen, The Netherlands
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16
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Chen R, Yan Y, Tang J, Zeng H, Yao Q, Chen L, Liang Z. Efficient p‐Type Doping of Tin Halide Perovskite via Sequential Diffusion for Thermoelectrics. SMALL SCIENCE 2022. [DOI: 10.1002/smsc.202200004] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/29/2022] Open
Affiliation(s)
- Ruisi Chen
- Department of Materials Science Fudan University Shanghai 200433 China
| | - Yajie Yan
- Department of Materials Science Fudan University Shanghai 200433 China
| | - Junhui Tang
- Department of Materials Science Fudan University Shanghai 200433 China
| | - Huarong Zeng
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai 200050 China
| | - Qin Yao
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai 200050 China
| | - Lidong Chen
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai 200050 China
| | - Ziqi Liang
- Department of Materials Science Fudan University Shanghai 200433 China
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17
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Wang R, Gao H, Yu R, Jia H, Ma Z, He Z, Zhang Y, Yang J, Zhang L, Tan Z. β-Diketone Coordination Strategy for Highly Efficient and Stable Pb-Sn Mixed Perovskite Solar Cells. J Phys Chem Lett 2021; 12:11772-11778. [PMID: 34855410 DOI: 10.1021/acs.jpclett.1c03555] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The narrow bandgap Pb-Sn hybrid perovskite materials with lower toxicities and adjustable optical bandgaps provide the opportunity to construct high-efficiency perovskite solar cells (PerSCs). To solve the issues of the uncontrollable crystallization rate of Pb-Sn perovskite and easy oxidation of Sn2+, a β-diketone-based additive, N,N,N',N'-tetraphenylmalondiamide (TPMA), is introduced to coordinate with Pb2+ and Sn2+. The introduction of TPMA can improve the morphology of perovskite films and decrease the density of defect states, resulting in an enhanced power conversion efficiency of >20% and improved stability. The PerSC without encapsulation retains 94% of its initial efficiency after being stored for 1000 h in a nitrogen-filled glovebox and shows a lifetime of only 8% degradation after being continuously heated for 100 h at 80 °C. This work represents a new strategy of introducing a β-diketone ligand as an additive in precursor engineering for achieving efficient and stable PerSCs.
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Affiliation(s)
- Ruyue Wang
- Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing 100029, China
| | - Huaizhi Gao
- Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing 100029, China
| | - Runnan Yu
- Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing 100029, China
| | - Haoran Jia
- Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing 100029, China
| | - Zongwen Ma
- Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing 100029, China
| | - Zhangwei He
- Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing 100029, China
| | - Yuling Zhang
- Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing 100029, China
| | - Jing Yang
- Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing 100029, China
| | - Lei Zhang
- Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing 100029, China
| | - Zhan'ao Tan
- Institute of Science and Technology, China Three Gorges Corporation, Beijing 100038, China
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