1
|
Liu D, Pei F, Wang S, Chen X, Yuan Y, Zhao J, Guo J, Wang T, Li L, Kan X, Liao Z, Song D, Liu X, Fang Y, Wang S, Zhou S, Qiu ZQ, Huang H, Yang M, Li Q. Manipulation of Exchange Bias in Two-Dimensional van der Waals Ferromagnet Near Room Temperature. ACS NANO 2024; 18:23812-23822. [PMID: 39146501 DOI: 10.1021/acsnano.4c09142] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/17/2024]
Abstract
As a host for exchange bias (EB), van der Waals (vdW) magnetic materials have exhibited intriguing and distinct functionalities from conventional magnetic materials. The EB in most vdW systems is far below room temperature, which poses a challenge for practical applications. Here, by using Kerr microscopy, we demonstrate a record-high blocking temperature that approaches room temperature and a huge positive EB field that nears 2 kOe at 100 K in naturally oxidized two-dimensional (2D) vdW ferromagnetic Fe3GaTe2 nanoflakes. Moreover, we realized a reversible manipulation of both the presence/absence and positive/negative signs of EB via a training magnetic field without multiple field cooling processes. Thus, our study clearly reveals the robust, sizable, and sign-tunable EB in vdW magnetic materials up to near room temperature, thereby establishing Fe3GaTe2 as an emerging room-temperature-operating vdW material and paving the way for designing practical 2D spintronic devices.
Collapse
Affiliation(s)
- Daxiang Liu
- National Synchrotron Radiation Laboratory, and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230029, China
| | - Fangfang Pei
- National Synchrotron Radiation Laboratory, and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230029, China
| | - Siyu Wang
- National Synchrotron Radiation Laboratory, and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230029, China
| | - Xiaoli Chen
- National Synchrotron Radiation Laboratory, and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230029, China
| | - Yanan Yuan
- National Synchrotron Radiation Laboratory, and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230029, China
| | - Jiapeng Zhao
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Junming Guo
- Anhui Provincial Key Laboratory of Magnetic Functional Materials and Devices, and Center of Free Electron Laser & High Magnetic Field, Institute of Physical Science and Information Technology, Anhui University, Hefei 230601, China
| | - Tianye Wang
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
| | - Lin Li
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Xucai Kan
- Anhui Provincial Key Laboratory of Magnetic Functional Materials and Devices, School of Materials Science and Engineering, Anhui University, Hefei 230601, China
| | - Zhaoliang Liao
- National Synchrotron Radiation Laboratory, and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230029, China
| | - Dongsheng Song
- Anhui Provincial Key Laboratory of Magnetic Functional Materials and Devices, and Center of Free Electron Laser & High Magnetic Field, Institute of Physical Science and Information Technology, Anhui University, Hefei 230601, China
| | - Xue Liu
- Anhui Provincial Key Laboratory of Magnetic Functional Materials and Devices, and Center of Free Electron Laser & High Magnetic Field, Institute of Physical Science and Information Technology, Anhui University, Hefei 230601, China
| | - Yong Fang
- Jiangsu Laboratory of Advanced Functional Materials, School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu 215500, China
| | - Shouguo Wang
- Anhui Provincial Key Laboratory of Magnetic Functional Materials and Devices, School of Materials Science and Engineering, Anhui University, Hefei 230601, China
| | - Shiming Zhou
- Anhui Provincial Key Laboratory of Magnetic Functional Materials and Devices, School of Materials Science and Engineering, Anhui University, Hefei 230601, China
| | - Zi Qiang Qiu
- Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States
| | - He Huang
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Mengmeng Yang
- Anhui Provincial Key Laboratory of Magnetic Functional Materials and Devices, and Center of Free Electron Laser & High Magnetic Field, Institute of Physical Science and Information Technology, Anhui University, Hefei 230601, China
| | - Qian Li
- National Synchrotron Radiation Laboratory, and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230029, China
| |
Collapse
|
2
|
Chong SK, Cheng Y, Man H, Lee SH, Wang Y, Dai B, Tanabe M, Yang TH, Mao Z, Moler KA, Wang KL. Intrinsic exchange biased anomalous Hall effect in an uncompensated antiferromagnet MnBi 2Te 4. Nat Commun 2024; 15:2881. [PMID: 38570519 PMCID: PMC10991375 DOI: 10.1038/s41467-024-46689-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/10/2023] [Accepted: 03/06/2024] [Indexed: 04/05/2024] Open
Abstract
Achieving spin-pinning at the interface of hetero-bilayer ferromagnet/antiferromagnet structures in conventional exchange bias systems can be challenging due to difficulties in interface control and the weakening of spin-pinning caused by poor interface quality. In this work, we propose an alternative approach to stabilize the exchange interaction at the interface of an uncompensated antiferromagnet by utilizing a gradient of interlayer exchange coupling. We demonstrate this exchange interaction through a designed field training protocol in the odd-layer topological antiferromagnet MnBi2Te4. Our results reveal a remarkable field-trained exchange bias of up to ~ 400 mT, which exhibits high repeatability and can be easily reset by a large training field. Notably, this field-trained exchange bias effect persists even with zero-field initialization, presenting a stark contrast to the traditional field-cooled exchange bias. The highly tunable exchange bias observed in this single antiferromagnet compound, without the need for an additional magnetic layer, provides valuable insight into the exchange interaction mechanism. These findings pave the way for the systematic design of topological antiferromagnetic spintronics.
Collapse
Affiliation(s)
- Su Kong Chong
- Department of Electrical and Computer Engineering, University of California, Los Angeles, CA, 90095, USA.
| | - Yang Cheng
- Department of Electrical and Computer Engineering, University of California, Los Angeles, CA, 90095, USA
| | - Huiyuan Man
- Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA, 94305, USA
- Stanford Nano Shared Facilities, Stanford University, Stanford, CA, 94305, USA
| | - Seng Huat Lee
- 2D Crystal Consortium, Materials Research Institute, The Pennsylvania State University, University Park, PA, 16802, USA
- Department of Physics, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Yu Wang
- 2D Crystal Consortium, Materials Research Institute, The Pennsylvania State University, University Park, PA, 16802, USA
- Department of Physics, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Bingqian Dai
- Department of Electrical and Computer Engineering, University of California, Los Angeles, CA, 90095, USA
| | - Masaki Tanabe
- Department of Electrical and Computer Engineering, University of California, Los Angeles, CA, 90095, USA
| | - Ting-Hsun Yang
- Department of Electrical and Computer Engineering, University of California, Los Angeles, CA, 90095, USA
| | - Zhiqiang Mao
- 2D Crystal Consortium, Materials Research Institute, The Pennsylvania State University, University Park, PA, 16802, USA
- Department of Physics, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Kathryn A Moler
- Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA, 94305, USA
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
- Department of Physics and Applied Physics, Stanford University, Stanford, CA, 94305, USA
| | - Kang L Wang
- Department of Electrical and Computer Engineering, University of California, Los Angeles, CA, 90095, USA.
| |
Collapse
|
3
|
Cham TMJ, Dorrian RJ, Zhang XS, Dismukes AH, Chica DG, May AF, Roy X, Muller DA, Ralph DC, Luo YK. Exchange Bias Between van der Waals Materials: Tilted Magnetic States and Field-Free Spin-Orbit-Torque Switching. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2305739. [PMID: 37800466 DOI: 10.1002/adma.202305739] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/14/2023] [Revised: 09/06/2023] [Indexed: 10/07/2023]
Abstract
Magnetic van der Waals heterostructures provide a unique platform to study magnetism and spintronics device concepts in the 2D limit. Here, studies of exchange bias from the van der Waals antiferromagnet CrSBr acting on the van der Waals ferromagnet Fe3 GeTe2 (FGT) are reported. The orientation of the exchange bias is along the in-plane easy axis of CrSBr, perpendicular to the out-of-plane anisotropy of the FGT, inducing a strongly tilted magnetic configuration in the FGT. Furthermore, the in-plane exchange bias provides sufficient symmetry breaking to allow deterministic spin-orbit torque switching of the FGT in CrSBr/FGT/Pt samples at zero applied magnetic field. A minimum thickness of the CrSBr of >10 nm is needed to provide a non-zero exchange bias at 30 K.
Collapse
Affiliation(s)
| | | | | | - Avalon H Dismukes
- Department of Chemistry, Columbia University, New York, NY, 10027, USA
| | - Daniel G Chica
- Department of Chemistry, Columbia University, New York, NY, 10027, USA
| | - Andrew F May
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Xavier Roy
- Department of Chemistry, Columbia University, New York, NY, 10027, USA
| | - David A Muller
- Cornell University, Ithaca, NY, 14850, USA
- Kavli Institute at Cornell, Ithaca, NY, 14853, USA
| | - Daniel C Ralph
- Cornell University, Ithaca, NY, 14850, USA
- Kavli Institute at Cornell, Ithaca, NY, 14853, USA
| | - Yunqiu Kelly Luo
- Cornell University, Ithaca, NY, 14850, USA
- Kavli Institute at Cornell, Ithaca, NY, 14853, USA
- Department of Physics and Astronomy, University of Southern California, Los Angeles, CA, 90089, USA
| |
Collapse
|
4
|
Averyanov DV, Sokolov IS, Taldenkov AN, Parfenov OE, Karateev IA, Kondratev OA, Tokmachev AM, Storchak VG. Intrinsic exchange bias state in silicene and germanene materials EuX 2. NANOSCALE HORIZONS 2023; 8:803-811. [PMID: 36987577 DOI: 10.1039/d3nh00009e] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
2D magnets have recently emerged as a host for unconventional phases and related phenomena. The prominence of 2D magnetism stems from its high amenability to external stimuli and structural variations. The low dimensionality facilitates competition between magnetic orders which may give rise to exchange bias, in particular in magnetic heterostructures. Here, we propose a strategy for the search of exchange bias state in 2D individual compounds. We track the evolution of magnetic orders driven by the number of monolayers in a system exhibiting antiferromagnetism in the multilayer and ferromagnetism in the monolayer limit. The material, EuSi2, has the structure of multilayer silicene intercalated by Eu. A strong intrinsic exchange bias effect accompanies the dimensional crossover. Comparison with silicene-based GdSi2 and germanene-based EuGe2 suggests the competition between magnetic orders to be a common property of this class of materials that may be useful in spintronic applications.
Collapse
Affiliation(s)
- Dmitry V Averyanov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
| | - Ivan S Sokolov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
| | - Alexander N Taldenkov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
| | - Oleg E Parfenov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
| | - Igor A Karateev
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
| | - Oleg A Kondratev
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
| | - Andrey M Tokmachev
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
| | - Vyacheslav G Storchak
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
| |
Collapse
|
5
|
Deng Z, Wang X, Wang M, Shen F, Zhang J, Chen Y, Feng HL, Xu J, Peng Y, Li W, Zhao J, Wang X, Valvidares M, Francoual S, Leupold O, Hu Z, Tjeng LH, Li MR, Croft M, Zhang Y, Liu E, He L, Hu F, Sun J, Greenblatt M, Jin C. Giant Exchange-Bias-Like Effect at Low Cooling Fields Induced by Pinned Magnetic Domains in Y 2 NiIrO 6 Double Perovskite. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209759. [PMID: 36795948 DOI: 10.1002/adma.202209759] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/22/2022] [Revised: 02/06/2023] [Indexed: 05/17/2023]
Abstract
Exchange bias (EB) is highly desirable for widespread technologies. Generally, conventional exchange-bias heterojunctions require excessively large cooling fields for sufficient bias fields, which are generated by pinned spins at the interface of ferromagnetic and antiferromagnetic layers. It is crucial for applicability to obtain considerable exchange-bias fields with minimum cooling fields. Here, an exchange-bias-like effect is reported in a double perovskite, Y2 NiIrO6 , which shows long-range ferrimagnetic ordering below 192 K. It displays a giant bias-like field of 1.1 T with a cooling field of only 15 Oe at 5 K. This robust phenomenon appears below 170 K. This fascinating bias-like effect is the secondary effect of the vertical shifts of the magnetic loops, which is attributed to the pinned magnetic domains due to the combination of strong spin-orbit coupling on Ir, and antiferromagnetically coupled Ni- and Ir-sublattices. The pinned moments in Y2 NiIrO6 are present throughout the full volume, not just at the interface as in conventional bilayer systems.
Collapse
Affiliation(s)
- Zheng Deng
- Institute of Physics, Chinese Academy of Sciences, School of Physics, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Department of Chemistry and Chemical Biology, Rutgers the State University of New Jersey, 123 Bevier Road, Piscataway, NJ, 08854, USA
| | - Xiao Wang
- Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Straβe 40, Dresden, 01187, Dresden, Germany
| | - Mengqin Wang
- Institute of Physics, Chinese Academy of Sciences, School of Physics, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Feiran Shen
- Spallation Neutron Source Science Center, Institute of High Energy Physics, Chinese Academy of Sciences, Dongguan, 523803, P. R. China
| | - Jine Zhang
- Institute of Physics, Chinese Academy of Sciences, School of Physics, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Yuansha Chen
- Institute of Physics, Chinese Academy of Sciences, School of Physics, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Hai L Feng
- Institute of Physics, Chinese Academy of Sciences, School of Physics, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Jiawang Xu
- Institute of Physics, Chinese Academy of Sciences, School of Physics, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Yi Peng
- Institute of Physics, Chinese Academy of Sciences, School of Physics, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Wenmin Li
- Institute of Physics, Chinese Academy of Sciences, School of Physics, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Jianfa Zhao
- Institute of Physics, Chinese Academy of Sciences, School of Physics, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Xiancheng Wang
- Institute of Physics, Chinese Academy of Sciences, School of Physics, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Manuel Valvidares
- ALBA Synchrotron Light Source, Cerdanyola del Valles, Barcelona, 08290, Spain
| | - Sonia Francoual
- Deutsches Elektronen-Synchrotron (DESY), Notkestraße 85, Hamburg, 22607, Hamburg, Germany
| | - Olaf Leupold
- Deutsches Elektronen-Synchrotron (DESY), Notkestraße 85, Hamburg, 22607, Hamburg, Germany
| | - Zhiwei Hu
- Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Straβe 40, Dresden, 01187, Dresden, Germany
| | - Liu Hao Tjeng
- Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Straβe 40, Dresden, 01187, Dresden, Germany
| | - Man-Rong Li
- Key Laboratory of Bioinorganic and Synthetic Chemistry of Ministry of Education, School of Chemistry, Sun Yat-Sen University, Guangzhou, 510275, P. R. China
| | - Mark Croft
- Department of Physics and Astronomy, Rutgers the State University of New Jersey, 136 Frelinghuysen Road, Piscataway, NJ, 08854, USA
| | - Ying Zhang
- Institute of Physics, Chinese Academy of Sciences, School of Physics, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Enke Liu
- Institute of Physics, Chinese Academy of Sciences, School of Physics, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Lunhua He
- Institute of Physics, Chinese Academy of Sciences, School of Physics, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Spallation Neutron Source Science Center, Songshan Lake Materials Laboratory, Dongguan, 523808, P. R. China
| | - Fengxia Hu
- Institute of Physics, Chinese Academy of Sciences, School of Physics, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Jirong Sun
- Institute of Physics, Chinese Academy of Sciences, School of Physics, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Martha Greenblatt
- Department of Chemistry and Chemical Biology, Rutgers the State University of New Jersey, 123 Bevier Road, Piscataway, NJ, 08854, USA
| | - Changqing Jin
- Institute of Physics, Chinese Academy of Sciences, School of Physics, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| |
Collapse
|
6
|
Ying Z, Chen B, Li C, Wei B, Dai Z, Guo F, Pan D, Zhang H, Wu D, Wang X, Zhang S, Fei F, Song F. Large Exchange Bias Effect and Coverage-Dependent Interfacial Coupling in CrI 3/MnBi 2Te 4 van der Waals Heterostructures. NANO LETTERS 2023; 23:765-771. [PMID: 36542799 DOI: 10.1021/acs.nanolett.2c02882] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Igniting interface magnetic ordering of magnetic topological insulators by building a van der Waals heterostructure can help to reveal novel quantum states and design functional devices. Here, we observe an interesting exchange bias effect, indicating successful interfacial magnetic coupling, in CrI3/MnBi2Te4 ferromagnetic insulator/antiferromagnetic topological insulator (FMI/AFM-TI) heterostructure devices. The devices originally exhibit a negative exchange bias field, which decays with increasing temperature and is unaffected by the back-gate voltage. When we change the device configuration to be half-covered by CrI3, the exchange bias becomes positive with a very large exchange bias field exceeding 300 mT. Such sensitive manipulation is explained by the competition between the FM and AFM coupling at the interface of CrI3 and MnBi2Te4, pointing to coverage-dependent interfacial magnetic interactions. Our work will facilitate the development of topological and antiferromagnetic devices.
Collapse
Affiliation(s)
- Zhe Ying
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China
| | - Bo Chen
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China
| | - Chunfeng Li
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China
| | - Boyuan Wei
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China
| | - Zheng Dai
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China
| | - Fengyi Guo
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China
| | - Danfeng Pan
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
- Microfabrication and Integration Technology Center, Nanjing University, Nanjing 210093, China
| | - Haijun Zhang
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China
| | - Di Wu
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China
| | - Xuefeng Wang
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Shuai Zhang
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China
- Atom Manufacturing Institute, Nanjing 211806, China
| | - Fucong Fei
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China
- Atom Manufacturing Institute, Nanjing 211806, China
| | - Fengqi Song
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China
- Atom Manufacturing Institute, Nanjing 211806, China
| |
Collapse
|
7
|
Liu C, Zhang H, Zhang S, Hou D, Liu Y, Wu H, Jiang Z, Wang H, Ma Z, Luo X, Li X, Sun Y, Xu X, Zhang Z, Sheng Z. Emergent, Non-Aging, Extendable, and Rechargeable Exchange Bias in 2D Fe 3 GeTe 2 Homostructures Induced by Moderate Pressuring. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2203411. [PMID: 36300686 DOI: 10.1002/adma.202203411] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/15/2022] [Revised: 10/13/2022] [Indexed: 06/16/2023]
Abstract
As a crucial concept in magnetism and spintronics, exchange bias (ExB) measures the asymmetry in the hysteresis loop of a pinned ferromagnet (FM)/antiferromagnet (AFM) interface. Previous studies are mainly focused on FM/AFM heterostructures composed of conventional bulk materials, whose complex interfaces prohibit precise control and full understanding of the phenomenon. Here, the enabling power of 2D magnets is exploited to demonstrate the emergence, non-aging, extendability, and rechargeability of ExB in van der Waals Fe3 GeTe2 homostructures, upon moderate pressuring. The emergence of the ExB is attributed to a local stress-induced FM-to-AFM transition, as validated using first-principles calculations, and confirmed in magneto-optical Kerr effect and second harmonic generation measurements. It is also observed that, negligible ExB aging before the training effect suddenly takes place through avalanching, pronounced delay of the avalanche via timed pressure repetition (extendability), ExB recovery in the post-training sample upon refreshed pressuring (rechargeability), and demonstrate its versatile tunability. These striking findings offer unprecedented insights into the underlying principles of ExB and its training, with immense technological applications in sight.
Collapse
Affiliation(s)
- Caixing Liu
- Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, P. R. China
- The International Center for Quantum Design of Functional Materials (ICQD), University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Huisheng Zhang
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of the Ministry of Education, Research Institute of Materials Science, Shanxi Normal University, Taiyuan, 030000, P. R. China
| | - Shunhong Zhang
- The International Center for Quantum Design of Functional Materials (ICQD), University of Science and Technology of China, Hefei, 230026, P. R. China
| | - De Hou
- Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Yonglai Liu
- Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Hanqing Wu
- The International Center for Quantum Design of Functional Materials (ICQD), University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Zhongzhu Jiang
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - HuaiXiang Wang
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Zongwei Ma
- Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Xuan Luo
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Xiaoyin Li
- The International Center for Quantum Design of Functional Materials (ICQD), University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Yuping Sun
- Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, P. R. China
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Xiaohong Xu
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of the Ministry of Education, Research Institute of Materials Science, Shanxi Normal University, Taiyuan, 030000, P. R. China
| | - Zhenyu Zhang
- The International Center for Quantum Design of Functional Materials (ICQD), University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Zhigao Sheng
- Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, P. R. China
- Key Laboratory of Photovoltaic Materials and Energy Conservation, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| |
Collapse
|
8
|
Averyanov DV, Sokolov IS, Taldenkov AN, Parfenov OE, Karateev IA, Kondratev OA, Tokmachev AM, Storchak VG. Exchange Bias State at the Crossover to 2D Ferromagnetism. ACS NANO 2022; 16:19482-19490. [PMID: 36278843 DOI: 10.1021/acsnano.2c09452] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The inherent malleability of 2D magnetism provides access to unconventional quantum phases, in particular those with coexisting magnetic orders. Incidentally, in a number of materials, the magnetic state in the bulk undergoes a fundamental change when the system is pushed to the monolayer limit. Therefore, a competition of magnetic states can be expected in the crossover region. Here, an exchange bias state is observed at the crossover from 3D antiferromagnetism to 2D ferromagnetism driven by the number of monolayers in the metalloxene GdSi2. The material constitutes a stack of alternating monolayers of Gd and silicene, the Si analogue of graphene. The exchange bias manifests itself as a shift of the hysteresis loop signifying coupling of magnetic systems, as evidenced by magnetization studies. Two features distinguish the phenomenon: (i) it is intrinsic, i.e. it is detected in an individual compound; (ii) the exchange bias field, 1.5 kOe, is unusually high, which is conducive to applications. The results suggest magnetic derivatives of 2D-Xenes to be prospective materials for ultracompact spintronics.
Collapse
Affiliation(s)
- Dmitry V Averyanov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia
| | - Ivan S Sokolov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia
| | - Alexander N Taldenkov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia
| | - Oleg E Parfenov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia
| | - Igor A Karateev
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia
| | - Oleg A Kondratev
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia
| | - Andrey M Tokmachev
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia
| | - Vyacheslav G Storchak
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia
| |
Collapse
|
9
|
Albarakati S, Xie WQ, Tan C, Zheng G, Algarni M, Li J, Partridge J, Spencer MJS, Farrar L, Xiong Y, Tian M, Wang X, Zhao YJ, Wang L. Electric Control of Exchange Bias Effect in FePS 3-Fe 5GeTe 2 van der Waals Heterostructures. NANO LETTERS 2022; 22:6166-6172. [PMID: 35912475 DOI: 10.1021/acs.nanolett.2c01370] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Manipulating the exchange bias (EB) effect using an electronic gate is a significant goal in spintronics. The emergence of van der Waals (vdW) magnetic heterostructures has provided improved means to study interlayer magnetic coupling, but to date, these heterostructures have not exhibited electrical gate-controlled EB effects. Here, we report electrically controllable EB effects in a vdW heterostructure, FePS3-Fe5GeTe2. By applying a solid protonic gate, the EB effects were repeatably electrically tuned. The EB field reaches up to 23% of the coercivity and the blocking temperature ranges from 30 to 60 K under various gate-voltages. The proton intercalations not only tune the average magnetic exchange coupling but also change the antiferromagnetic configurations in the FePS3 layer. These result in a dramatic modulation of the total interface exchange coupling and the resultant EB effects. The study is a significant step toward vdW heterostructure-based magnetic logic for future low-energy electronics.
Collapse
Affiliation(s)
- Sultan Albarakati
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), School of Science, RMIT University, Melbourne, Victoria3001, Australia
- Physics Department, Faculty of Science and Arts, University of Jeddah, P.O. Box 80200, 21589Khulais, Saudi Arabia
| | - Wen-Qiang Xie
- Department of Physics, South China University of Technology, Guangzhou510640, China
| | - Cheng Tan
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), School of Science, RMIT University, Melbourne, Victoria3001, Australia
| | - Guolin Zheng
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences (CAS), Hefei, Anhui230031, China
| | - Meri Algarni
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), School of Science, RMIT University, Melbourne, Victoria3001, Australia
| | - Junbo Li
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences (CAS), Hefei, Anhui230031, China
| | - James Partridge
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), School of Science, RMIT University, Melbourne, Victoria3001, Australia
| | - Michelle J S Spencer
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), School of Science, RMIT University, Melbourne, Victoria3001, Australia
| | - Lawrence Farrar
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), School of Science, RMIT University, Melbourne, Victoria3001, Australia
| | - Yimin Xiong
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences (CAS), Hefei, Anhui230031, China
| | - Mingliang Tian
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences (CAS), Hefei, Anhui230031, China
- Department of Physics, School of Physics and Materials Science, Anhui University, Hefei, Anhui230601, China
| | - Xiaolin Wang
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), University of Wollongong, Wollongong, New South Wales2500, Australia
- Institute for Superconducting & Electronic Materials, Australian Institute of Innovative Materials, University of Wollongong, Wollongong, New South Wales2500, Australia
| | - Yu-Jun Zhao
- Department of Physics, South China University of Technology, Guangzhou510640, China
| | - Lan Wang
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), School of Science, RMIT University, Melbourne, Victoria3001, Australia
| |
Collapse
|