Self-Healing and Light-Soaking in MAPbI3 : The Effect of H2 O

Synthesis of Size-Adjustable CsPbBr3 Perovskite Quantum Dots for Potential Photoelectric Catalysis Applications

As a direct band gap semiconductor, perovskite has the advantages of high carrier mobility, long charge diffusion distance, high defect tolerance and low-cost solution preparation technology. Compared with traditional metal halide perovskites, which regulate energy band and luminescence by changing halogen, perovskite quantum dots (QDs) have a surface effect and quantum confinement effect. Based on the LaMer nucleation growth theory, we have synthesized CsPbBr3 QDs with high dimensional homogeneity by creating an environment rich in Br- ions based on the general thermal injection method. Moreover, the size of the quantum dots can be adjusted by simply changing the reaction temperature and the concentration of Br- ions in the system, and the blue emission of strongly confined pure CsPbBr3 perovskite is realized. Finally, optical and electrochemical tests suggested that the synthesized quantum dots have the potential to be used in the field of photocatalysis.

Degradation and Self-Healing of FAPbBr3 Perovskite under Soft-X-Ray Irradiation

The extensive use of perovskites as light absorbers calls for a deeper understanding of the interaction of these materials with light. Here, the evolution of the chemical and optoelectronic properties of formamidinium lead tri-bromide (FAPbBr3 ) films is tracked under the soft X-ray beam of a high-brilliance synchrotron source by photoemission spectroscopy and micro-photoluminescence. Two contrasting processes are at play during the irradiation. The degradation of the material manifests with the formation of Pb0 metallic clusters, loss of gaseous Br2 , decrease and shift of the photoluminescence emission. The recovery of the photoluminescence signal for prolonged beam exposure times is ascribed to self-healing of FAPbBr3 , thanks to the re-oxidation of Pb0 and migration of FA+ and Br- ions. This scenario is validated on FAPbBr3 films treated by Ar+ ion sputtering. The degradation/self-healing effect, which is previously reported for irradiation up to the ultraviolet regime, has the potential of extending the lifetime of X-ray detectors based on perovskites.

A-Site Cation Dependence of Self-Healing in Polycrystalline APbI3 Perovskite Films

In terms of sustainable use, halide perovskite (HaP) semiconductors have a strong advantage over most other classes of materials for (opto)electronics, as they can self-heal (SH) from photodamage. While there is considerable literature on SH in devices, where it may not be clear exactly where damage and SH occur, there is much less on the HaP material itself. Here we perform "fluorescence recovery after photobleaching" (FRAP) measurements to study SH on polycrystalline thin films for which encapsulation is critical to achieving complete and fast self-healing. We compare SH in three photoactive APbI₃ perovskite films by varying the A-site cation ranging from (relatively) small inorganic Cs through medium-sized MA to large FA (the last two are organic cations). While the A cation is often considered electronically relatively inactive, it significantly affects both SH kinetics and the threshold for photodamage. The SH kinetics are markedly faster for γ-CsPbI₃ and α-FAPbI₃ than for MAPbI₃. Furthermore, γ-CsPbI₃ exhibits an intricate interplay between photoinduced darkening and brightening. We suggest possible explanations for the observed differences in SH behavior. This study's results are essential for identifying absorber materials that can regain intrinsic, insolation-induced photodamage-linked efficiency loss during its rest cycles, thus enabling applications such as autonomously sustainable electronics.

Topotactic, Vapor-Phase, In Situ Monitored Formation of Ultrathin, Phase-Pure 2D-on-3D Halide Perovskite Surfaces

Two-dimensional (2D) halide perovskites, HaPs, can provide chemical stability to three-dimensional (3D) HaP surfaces, protecting them from exposure to ambient species and from reacting with contacting layers. Both actions occur with 2D HaPs, with the general stoichiometry R₂PbI₄ (R: long or bulky organic amine) covering the 3D ones. Adding such covering films can also boost power conversion efficiencies of photovoltaic cells by passivating surface/interface trap states. For maximum benefit, we need conformal ultrathin and phase-pure (n = 1) 2D layers to enable efficient tunneling of photogenerated charge carriers through the 2D film barrier. Conformal coverage of ultrathin (<10 nm) R₂PbI₄ layers on 3D perovskites is challenging with spin coating; even more so is its upscaling for larger-area devices. We report on vapor-phase cation exchange of the 3D surface with the R₂PbI₄ molecules and real-time in situ growth monitoring by photoluminescence (PL) to determine limits for forming ultrathin 2D layers. We characterize the 2D growth stages, following the changing PL intensity-time profiles, by combining structural, optical, morphological, and compositional characterizations. Moreover, from quantitative X-ray photoelectron spectroscopy (XPS) analysis on 2D/3D bilayer films, we estimate the smallest width of a 2D cover that we can grow to be <5 nm, roughly the limit for efficient tunneling through a (semi)conjugated organic barrier. We also find that, besides protecting the 3D against ambient humidity-induced degradation, the ultrathin 2D-on-3D film also aids self-repair following photodamage.

Self-Healing Ability of Perovskites Observed via Photoluminescence Response on Nanoscale Local Forces and Mechanical Damage

The photoluminescence (PL) of metal halide perovskites can recover after light or current-induced degradation. This self-healing ability is tested by acting mechanically on MAPbI3 polycrystalline microcrystals by an atomic force microscope tip (applying force, scratching, and cutting) while monitoring the PL. Although strain and crystal damage induce strong PL quenching, the initial balance between radiative and nonradiative processes in the microcrystals is restored within a few minutes. The stepwise quenching-recovery cycles induced by the mechanical action is interpreted as a modulation of the PL blinking behavior. This study proposes that the dynamic equilibrium between active and inactive states of the metastable nonradiative recombination centers causing blinking is perturbed by strain. Reversible stochastic transformation of several nonradiative centers per microcrystal under application/release of the local stress can lead to the observed PL quenching and recovery. Fitting the experimental PL trajectories by a phenomenological model based on viscoelasticity provides a characteristic time of strain relaxation in MAPbI3 on the order of 10-100 s. The key role of metastable defect states in nonradiative losses and in the self-healing properties of perovskites is suggested.

Static Disorder in Lead Halide Perovskites

In crystalline and amorphous semiconductors, the temperature-dependent Urbach energy can be determined from the inverse slope of the logarithm of the absorption spectrum and reflects the static and dynamic energetic disorder. Using recent advances in the sensitivity of photocurrent spectroscopy methods, we elucidate the temperature-dependent Urbach energy in lead halide perovskites containing different numbers of cation components. We find Urbach energies at room temperature to be 13.0 ± 1.0, 13.2 ± 1.0, and 13.5 ± 1.0 meV for single, double, and triple cation perovskite. Static, temperature-independent contributions to the Urbach energy are found to be as low as 5.1 ± 0.5, 4.7 ± 0.3, and 3.3 ± 0.9 meV for the same systems. Our results suggest that, at a low temperature, the dominant static disorder in perovskites is derived from zero-point phonon energy rather than structural disorder. This is unusual for solution-processed semiconductors but broadens the potential application of perovskites further to quantum electronics and devices.