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Xue G, Qin B, Ma C, Yin P, Liu C, Liu K. Large-Area Epitaxial Growth of Transition Metal Dichalcogenides. Chem Rev 2024; 124:9785-9865. [PMID: 39132950 DOI: 10.1021/acs.chemrev.3c00851] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/13/2024]
Abstract
Over the past decade, research on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high carrier mobility, significant excitonic effects, and strong spin-orbit couplings. Considerable attention from both scientific and industrial communities has fully fueled the exploration of TMDs toward practical applications. Proposed scenarios, such as ultrascaled transistors, on-chip photonics, flexible optoelectronics, and efficient electrocatalysis, critically depend on the scalable production of large-area TMD films. Correspondingly, substantial efforts have been devoted to refining the synthesizing methodology of 2D TMDs, which brought the field to a stage that necessitates a comprehensive summary. In this Review, we give a systematic overview of the basic designs and significant advancements in large-area epitaxial growth of TMDs. We first sketch out their fundamental structures and diverse properties. Subsequent discussion encompasses the state-of-the-art wafer-scale production designs, single-crystal epitaxial strategies, and techniques for structure modification and postprocessing. Additionally, we highlight the future directions for application-driven material fabrication and persistent challenges, aiming to inspire ongoing exploration along a revolution in the modern semiconductor industry.
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Affiliation(s)
- Guodong Xue
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Biao Qin
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Chaojie Ma
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Peng Yin
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Can Liu
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing 100871, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
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2
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Chen D, Mu S. Molten Salt-Assisted Synthesis of Catalysts for Energy Conversion. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2408285. [PMID: 39246151 DOI: 10.1002/adma.202408285] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/11/2024] [Revised: 08/28/2024] [Indexed: 09/10/2024]
Abstract
A breakthrough in manufacturing procedures often enables people to obtain the desired functional materials. For the field of energy conversion, designing and constructing catalysts with high cost-effectiveness is urgently needed for commercial requirements. Herein, the molten salt-assisted synthesis (MSAS) strategy is emphasized, which combines the advantages of traditional solid and liquid phase synthesis of catalysts. It not only provides sufficient kinetic accessibility, but effectively controls the size, morphology, and crystal plane features of the product, thus possessing promising application prospects. Specifically, the selection and role of the molten salt system, as well as the mechanism of molten salt assistance are analyzed in depth. Then, the creation of the catalyst by the MSAS and the electrochemical energy conversion related application are introduced in detail. Finally, the key problems and countermeasures faced in breakthroughs are discussed and look forward to the future. Undoubtedly, this systematical review and insights here will promote the comprehensive understanding of the MSAS and further stimulate the generation of new and high efficiency catalysts.
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Affiliation(s)
- Ding Chen
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, China
| | - Shichun Mu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, China
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3
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Sun Y, Wang H, Xie D. Recent Advance in Synaptic Plasticity Modulation Techniques for Neuromorphic Applications. NANO-MICRO LETTERS 2024; 16:211. [PMID: 38842588 PMCID: PMC11156833 DOI: 10.1007/s40820-024-01445-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/19/2024] [Accepted: 05/14/2024] [Indexed: 06/07/2024]
Abstract
Manipulating the expression of synaptic plasticity of neuromorphic devices provides fascinating opportunities to develop hardware platforms for artificial intelligence. However, great efforts have been devoted to exploring biomimetic mechanisms of plasticity simulation in the last few years. Recent progress in various plasticity modulation techniques has pushed the research of synaptic electronics from static plasticity simulation to dynamic plasticity modulation, improving the accuracy of neuromorphic computing and providing strategies for implementing neuromorphic sensing functions. Herein, several fascinating strategies for synaptic plasticity modulation through chemical techniques, device structure design, and physical signal sensing are reviewed. For chemical techniques, the underlying mechanisms for the modification of functional materials were clarified and its effect on the expression of synaptic plasticity was also highlighted. Based on device structure design, the reconfigurable operation of neuromorphic devices was well demonstrated to achieve programmable neuromorphic functions. Besides, integrating the sensory units with neuromorphic processing circuits paved a new way to achieve human-like intelligent perception under the modulation of physical signals such as light, strain, and temperature. Finally, considering that the relevant technology is still in the basic exploration stage, some prospects or development suggestions are put forward to promote the development of neuromorphic devices.
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Affiliation(s)
- Yilin Sun
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China.
| | - Huaipeng Wang
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, People's Republic of China
| | - Dan Xie
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, People's Republic of China.
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4
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Feng Y, Khalid M, Xiao H, Hu P. Two-dimensional material assisted-growth strategy: new insights and opportunities. NANOTECHNOLOGY 2024; 35:322001. [PMID: 38688246 DOI: 10.1088/1361-6528/ad4553] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/24/2023] [Accepted: 04/30/2024] [Indexed: 05/02/2024]
Abstract
The exploration and synthesis of novel materials are integral to scientific and technological progress. Since the prediction and synthesis of two-dimensional (2D) materials, it is expected to play an important role in the application of industrialization and the information age, resulting from its excellent physical and chemical properties. Currently, researchers have effectively utilized a range of material synthesis techniques, including mechanical exfoliation, redox reactions, chemical vapor deposition, and chemical vapor transport, to fabricate two-dimensional materials. However, despite their rapid development, the widespread industrial application of 2D materials faces challenges due to demanding synthesis requirements and high costs. To address these challenges, assisted growth techniques such as salt-assisted, gas-assisted, organic-assisted, and template-assisted growth have emerged as promising approaches. Herein, this study gives a summary of important developments in recent years in the assisted growth synthesis of 2D materials. Additionally, it highlights the current difficulties and possible benefits of the assisted-growth approach for 2D materials. It also highlights novel avenues of development and presents opportunities for new lines of investigation.
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Affiliation(s)
- Yuming Feng
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150080, People's Republic of China
| | - Mansoor Khalid
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150080, People's Republic of China
| | - Haiying Xiao
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150080, People's Republic of China
| | - PingAn Hu
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150080, People's Republic of China
- Key Lab of Microsystem and Microstructure of Ministry of Education, Harbin Institute of Technology, Harbin 150080, People's Republic of China
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5
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Li Z, Chen Z, Xiao L, Zhou X, Zhao C, Zhang Y. Extremely Enhanced Photoluminescence in MoS 2-Derived Quantum Sheets. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38470979 DOI: 10.1021/acsami.3c17934] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/14/2024]
Abstract
Molybdenum disulfide (MoS2) quantum sheets (QSs) are attractive for applications due to their tunable energy band structures and optical and electronic properties. The photoluminescence quantum yield (PLQY) of MoS2 QSs achieved by mechanical and liquid exfoliation and chemical vapor deposition is low. Some studies have reported that chemical treatment and elemental doping can improve the PLQY of transition metal dichalcogenides (TMDs), but this is limited by complex instruments and reactions. In this study, a heat treatment method based on a polar solvent is reported to improve the PLQY and photoluminescence (PL) intensity of MoS2 QSs at room temperature. The absolute PLQY of treated MoS2 QSs is increased to 18.5%, and the PL intensity is increased by a factor of 64. This method is also effective for tungsten disulfide (WS2) QSs. The PL enhancement of QSs is attributed to oxidation of the edges. Such passivation/deformation of MoS2 QSs facilitates the radiative route rather than the nonradiative route, resulting in extreme enhancement of the PL. Our work could provide novel insights/routes toward the PL enhancement of TMD QSs.
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Affiliation(s)
- Zhangqiang Li
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Zhexue Chen
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Liuyang Xiao
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Xuanping Zhou
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Ce Zhao
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Yong Zhang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P. R. China
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
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6
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He Q, Sheng B, Zhu K, Zhou Y, Qiao S, Wang Z, Song L. Phase Engineering and Synchrotron-Based Study on Two-Dimensional Energy Nanomaterials. Chem Rev 2023; 123:10750-10807. [PMID: 37581572 DOI: 10.1021/acs.chemrev.3c00389] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/16/2023]
Abstract
In recent years, there has been significant interest in the development of two-dimensional (2D) nanomaterials with unique physicochemical properties for various energy applications. These properties are often derived from the phase structures established through a range of physical and chemical design strategies. A concrete analysis of the phase structures and real reaction mechanisms of 2D energy nanomaterials requires advanced characterization methods that offer valuable information as much as possible. Here, we present a comprehensive review on the phase engineering of typical 2D nanomaterials with the focus of synchrotron radiation characterizations. In particular, the intrinsic defects, atomic doping, intercalation, and heterogeneous interfaces on 2D nanomaterials are introduced, together with their applications in energy-related fields. Among them, synchrotron-based multiple spectroscopic techniques are emphasized to reveal their intrinsic phases and structures. More importantly, various in situ methods are employed to provide deep insights into their structural evolutions under working conditions or reaction processes of 2D energy nanomaterials. Finally, conclusions and research perspectives on the future outlook for the further development of 2D energy nanomaterials and synchrotron radiation light sources and integrated techniques are discussed.
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Affiliation(s)
- Qun He
- National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230029, China
| | - Beibei Sheng
- National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230029, China
| | - Kefu Zhu
- National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230029, China
| | - Yuzhu Zhou
- National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230029, China
| | - Sicong Qiao
- National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230029, China
| | - Zhouxin Wang
- National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230029, China
| | - Li Song
- National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230029, China
- Zhejiang Institute of Photonelectronics, Jinhua, Zhejiang 321004, China
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7
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Wang S, Ding D, Li P, Sui Y, Liu G, Zhao S, Xiao R, Tian C, Chen Z, Wang H, Chen C, Mu G, Liu Y, Zhang Y, Jin C, Ding F, Yu G. Concentration Phase Separation of Substitution-Doped Atoms in TMDCs Monolayer. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2301027. [PMID: 37060218 DOI: 10.1002/smll.202301027] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/05/2023] [Revised: 03/28/2023] [Indexed: 06/19/2023]
Abstract
The density and spatial distribution of substituted dopants affect the transition metal dichalcogenides (TMDCs) materials properties. Previous studies have demonstrated that the density of dopants in TMDCs increases with the amount of doping, and the phenomenon of doping concentration difference between the nucleation center and the edge is observed, but the spatial distribution law of doping atoms has not been carefully studied. Here, it is demonstrated that the spatial distribution of dopants changes at high doping concentrations. The spontaneous formation of an interface with a steep doping concentration change is named concentration phase separation (CPS). The difference in the spatial distribution of dopants on both sides of the interface can be identified by an optical microscope. This is consistent with the results of spectral analysis and microstructure characterization of scanning transmission electron microscope. According to the calculation results of density functional theory, the chemical potential has two relatively stable energies as the doping concentration increases, which leads to the spontaneous formation of CPS. Understanding the abnormal phenomena is important for the design of TMDCs devices. This work has great significance in the establishment and improvement of the doping theory and the design of the doping process for 2D materials.
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Affiliation(s)
- Shuang Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Degong Ding
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China
| | - Pai Li
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Yanping Sui
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Guanyu Liu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Sunwen Zhao
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Runhan Xiao
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Chuang Tian
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhiying Chen
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Haomin Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Chen Chen
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Gang Mu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yixin Liu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yanhui Zhang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Chuanhong Jin
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, China
| | - Feng Ding
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Faculty of Materials Science and Engineering/Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, 1068 Xueyuan Blvd, Shenzhen, 518055, China
| | - Guanghui Yu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
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8
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Kim M, Son M, Seo DB, Kim J, Jang M, Kim DI, Lee S, Yim S, Song W, Myung S, Yoo JW, Lee SS, An KS. Dual Catalytic and Self-Assembled Growth of Two-Dimensional Transition Metal Dichalcogenides Through Simultaneous Predeposition Process. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2206350. [PMID: 36866498 DOI: 10.1002/smll.202206350] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/15/2022] [Revised: 02/10/2023] [Indexed: 06/02/2023]
Abstract
The recent introduction of alkali metal halide catalysts for chemical vapor deposition (CVD) of transition metal dichalcogenides (TMDs) has enabled remarkable two-dimensional (2D) growth. However, the process development and growth mechanism require further exploration to enhance the effects of salts and understand the principles. Herein, simultaneous predeposition of a metal source (MoO3 ) and salt (NaCl) by thermal evaporation is adopted. As a result, remarkable growth behaviors such as promoted 2D growth, easy patterning, and potential diversity of target materials can be achieved. Step-by-step spectroscopy combined with morphological analyses reveals a reaction path for MoS2 growth in which NaCl reacts separately with S and MoO3 to form Na2 SO4 and Na2 Mo2 O7 intermediates, respectively. These intermediates provide a favorable environment for 2D growth, including an enhanced source supply and liquid medium. Consequently, large grains of monolayer MoS2 are formed by self-assembly, indicating the merging of small equilateral triangular grains on the liquid intermediates. This study is expected to serve as an ideal reference for understanding the principles of salt catalysis and evolution of CVD in the preparation of 2D TMDs.
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Affiliation(s)
- Minsu Kim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Minkyun Son
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, 50 UNIST-gil, Ulju-gun, Ulsan, 44919, Republic of Korea
| | - Dong-Bum Seo
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Jin Kim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Moonjeong Jang
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Dong In Kim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Seunghun Lee
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
- Department of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Suwon-si, Gyeonggi-do, 16419, Republic of Korea
| | - Soonmin Yim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Wooseok Song
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Sung Myung
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Jung-Woo Yoo
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, 50 UNIST-gil, Ulju-gun, Ulsan, 44919, Republic of Korea
| | - Sun Sook Lee
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
| | - Ki-Seok An
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, 141 Gajeong-ro, Yuseong-gu, Daejeon, 34114, Republic of Korea
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9
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Giri A, Park G, Jeong U. Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications. Chem Rev 2023; 123:3329-3442. [PMID: 36719999 PMCID: PMC10103142 DOI: 10.1021/acs.chemrev.2c00455] [Citation(s) in RCA: 20] [Impact Index Per Article: 20.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/30/2022] [Indexed: 02/01/2023]
Abstract
The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.
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Affiliation(s)
- Anupam Giri
- Department
of Chemistry, Faculty of Science, University
of Allahabad, Prayagraj, UP-211002, India
| | - Gyeongbae Park
- Department
of Materials Science and Engineering, Pohang
University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea
- Functional
Materials and Components R&D Group, Korea Institute of Industrial Technology, Gwahakdanji-ro 137-41, Sacheon-myeon, Gangneung, Gangwon-do25440, Republic of Korea
| | - Unyong Jeong
- Department
of Materials Science and Engineering, Pohang
University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea
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10
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Sokolikova MS, Cheng G, Och M, Palczynski P, El Hajraoui K, Ramasse QM, Mattevi C. Tuning the 1T'/2H phases in W xMo 1-xSe 2 nanosheets. NANOSCALE 2023; 15:2714-2725. [PMID: 36651927 PMCID: PMC9909680 DOI: 10.1039/d2nr05631c] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/11/2022] [Accepted: 01/10/2023] [Indexed: 06/17/2023]
Abstract
Controlling materials' morphology, crystal phase and chemical composition at the atomic scale has become central in materials research. Wet chemistry approaches have great potential in directing the material crystallisation process to achieve tuneable chemical compositions as well as to target specific crystal phases. Herein, we report the compositional and crystal phase tuneability achieved in the quasi-binary WxMo1-xSe2 system with chemical and crystal phase mixing down to the atomic level. A series of WxMo1-xSe2 solid solutions in the form of nanoflowers with atomically thin petals were obtained via a direct colloidal reaction by systematically varying the ratios of transition metal precursors. We investigate the effect of selenium precursor on the morphology of the WxMo1-xSe2 material and show how using elemental selenium can enable the formation of larger and distinct nanoflowers. While the synthesised materials are compositionally homogeneous, they exhibit crystal phase heterogeneity with the co-existing domains of the 1T' and 2H crystal phases, and with evidence of MoSe2 in the metastable 1T' phase. We show at single atom level of resolution, that tungsten and molybdenum can be found in both the 1T' and 2H lattices. The formation of heterophase 1T'/2H WxMo1-xSe2 electrocatalysts allowed for a considerable improvement in the activity for the acidic hydrogen evolution reaction (HER) compared to pristine, 1T'-dominated, WSe2. This work can pave the way towards engineered functional nanomaterials where properties, such as electronic and catalytic, have to be controlled at the atomic scale.
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Affiliation(s)
| | - Gang Cheng
- Department of Materials, Imperial College London, London SW7 2AZ, UK.
| | - Mauro Och
- Department of Materials, Imperial College London, London SW7 2AZ, UK.
| | - Pawel Palczynski
- Department of Materials, Imperial College London, London SW7 2AZ, UK.
| | - Khalil El Hajraoui
- SuperSTEM Laboratory, SciTech Daresbury, Keckwick Lane, Daresbury WA4 4AD, UK
- York NanoCentre & Department of Physics, University of York, York YO10 5DD, UK
| | - Quentin M Ramasse
- SuperSTEM Laboratory, SciTech Daresbury, Keckwick Lane, Daresbury WA4 4AD, UK
- School of Physics and Astronomy & School of Chemical and Process Engineering, University of Leeds, Leeds LS2 9JT, UK
| | - Cecilia Mattevi
- Department of Materials, Imperial College London, London SW7 2AZ, UK.
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11
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Hu S, Guo R, Gao Y, Chen F. Oxoiron(IV)-dominated Heterogeneous Fenton-like Mechanism of Fe-Doped MoS 2. Chem Asian J 2023; 18:e202201134. [PMID: 36459407 DOI: 10.1002/asia.202201134] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/08/2022] [Revised: 12/01/2022] [Accepted: 12/01/2022] [Indexed: 12/04/2022]
Abstract
Oxoiron(IV) species are a critical intermediate in the Fe-based Fenton-like process at circumneutral pH, and its oxidative reactivity is closely related to the ligands. An optional inorganic host material, MoS2 , is selected to construct a highly reactive sulfur ligand coordinated Fe species in this work. The Fe species doped in MoS2 is presented as the FeII centre and triggers the transformation of the 2H phase to the octahedral 1T phase MoS2 . The role of the interaction between doped Fe and the MoS2 host lattice on the formation of oxoiron(IV) is studied. A significant Fenton-like reactivity and a remarkable accumulation of oxoiron(IV) species were observed for Fe-MoS2 . The quenching experiment was implemented to disclose the predominant role of oxoiron(IV) species in the Fe-MoS2 /H2 O2 Fenton-like system. Furthermore, oxoiron(IV) species could transform into the ⋅O2 - and 1 O2 , which further expedites the Fenton-like reaction.
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Affiliation(s)
- Shiyu Hu
- Key Laboratory for Advanced Materials and Institute of Fine Chemicals, School of Chemistry and Molecular Engineering, East China University of Science and Technology, 130 Meilong Road, 200237, Shanghai, P. R. China
| | - Rujia Guo
- Key Laboratory for Advanced Materials and Institute of Fine Chemicals, School of Chemistry and Molecular Engineering, East China University of Science and Technology, 130 Meilong Road, 200237, Shanghai, P. R. China
| | - Yiqian Gao
- Key Laboratory for Advanced Materials and Institute of Fine Chemicals, School of Chemistry and Molecular Engineering, East China University of Science and Technology, 130 Meilong Road, 200237, Shanghai, P. R. China
| | - Feng Chen
- Key Laboratory for Advanced Materials and Institute of Fine Chemicals, School of Chemistry and Molecular Engineering, East China University of Science and Technology, 130 Meilong Road, 200237, Shanghai, P. R. China
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12
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Zhang Y, Zhang XY, Sun WY. In Situ Carbon-Encapsulated Copper-Doped Cerium Oxide Derived from MOFs for Boosting CO 2-to-CH 4 Electro-Conversion. ACS Catal 2023. [DOI: 10.1021/acscatal.2c05538] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/12/2023]
Affiliation(s)
- Ya Zhang
- Coordination Chemistry Institute, State Key Laboratory of Coordination Chemistry, School of Chemistry and Chemical Engineering, Nanjing National Laboratory of Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, China
| | - Xiao-Yu Zhang
- Coordination Chemistry Institute, State Key Laboratory of Coordination Chemistry, School of Chemistry and Chemical Engineering, Nanjing National Laboratory of Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, China
| | - Wei-Yin Sun
- Coordination Chemistry Institute, State Key Laboratory of Coordination Chemistry, School of Chemistry and Chemical Engineering, Nanjing National Laboratory of Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, China
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13
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Sulfur ligated oxoiron(IV) centre in fenton-like reaction: Theoretical postulation and experimental verification. CATAL COMMUN 2022. [DOI: 10.1016/j.catcom.2022.106536] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/19/2022] Open
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14
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Zhang B, Yun C, Wu H, Zhao Z, Zeng Y, Liang D, Shen T, Zhang J, Huang X, Song J, Xu J, Zhang Q, Tan PH, Gao S, Hou Y. Two-Dimensional Wedge-Shaped Magnetic EuS: Insight into the Substrate Step-Guided Epitaxial Synthesis on Sapphire. J Am Chem Soc 2022; 144:19758-19769. [PMID: 36257067 DOI: 10.1021/jacs.2c06023] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
Rare earth chalcogenides (RECs) with novel luminescence and magnetic properties offer fascinating opportunities for fundamental research and applications. However, controllable synthesis of RECs down to the two-dimensional (2D) limit still has a great challenge. Herein, 2D wedge-shaped ferromagnetic EuS single crystals are successfully synthesized via a facile molten-salt-assisted chemical vapor deposition method on sapphire. Based on the theoretical simulations and experimental measurements, the mechanisms of aligned growth and wedge-shaped growth are systematically proposed. The wedge-shaped growth is driven by a dual-interaction mechanism, where the coupling between EuS and the substrate steps impedes the lateral growth, and the strong bonding of nonlayered EuS itself facilitates the vertical growth. Through temperature-dependent Raman and photoluminescence characterization, the nanoflakes show a large Raman temperature coefficient of -0.030 cm-1 K-1 and uncommon increasing band gap with temperature. More importantly, by low-temperature magnetic force microscopy characterization, thickness variation of the magnetic signal is revealed within one sample, indicating the great potential of the wedge-shaped nanoflake to serve as a platform for highly efficient investigation of thickness-dependent magnetic properties. This work sheds new light on 2D RECs and will offer a deep understanding of 2D wedge-shaped materials.
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Affiliation(s)
- Biao Zhang
- School of Materials Science and Engineering, Peking University, Beijing100871, China.,Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing100871, China
| | - Chao Yun
- State Key Laboratory for Mesoscopic Physics, School of Physics, Beijing Key Laboratory for Magnetoeletric Materials and Devices, Peking University, Beijing100871, China
| | - Heng Wu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing100083, China
| | - Zijing Zhao
- School of Materials Science and Engineering, Peking University, Beijing100871, China.,Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing100871, China
| | - Yi Zeng
- School of Materials Science and Engineering, Peking University, Beijing100871, China.,Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing100871, China
| | - Dong Liang
- State Key Laboratory for Mesoscopic Physics, School of Physics, Beijing Key Laboratory for Magnetoeletric Materials and Devices, Peking University, Beijing100871, China
| | - Tong Shen
- School of Materials Science and Engineering, Peking University, Beijing100871, China.,Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing100871, China
| | - Jine Zhang
- School of Integrated Circuit Science and Engineering, Beihang University, Beijing100191, China
| | - Xiaoxiao Huang
- School of Materials Science and Engineering, Peking University, Beijing100871, China.,Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing100871, China
| | - Jiepeng Song
- School of Materials Science and Engineering, Peking University, Beijing100871, China
| | - Junjie Xu
- School of Materials Science and Engineering, Peking University, Beijing100871, China.,Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing100871, China
| | - Qing Zhang
- School of Materials Science and Engineering, Peking University, Beijing100871, China
| | - Ping-Heng Tan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing100083, China
| | - Song Gao
- Institute of Spin-X Science and Technology, South China University of Technology, Guangzhou510641, China
| | - Yanglong Hou
- School of Materials Science and Engineering, Peking University, Beijing100871, China.,Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, Peking University, Beijing100871, China
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15
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Shen D, Zhao B, Zhang Z, Zhang H, Yang X, Huang Z, Li B, Song R, Jin Y, Wu R, Li B, Li J, Duan X. Synthesis of Group VIII Magnetic Transition-Metal-Doped Monolayer MoSe 2. ACS NANO 2022; 16:10623-10631. [PMID: 35735791 DOI: 10.1021/acsnano.2c02214] [Citation(s) in RCA: 18] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The limitation on the spintronic applications of van der Waals layered transition-metal dichalcogenide semiconductors is ascribed to the intrinsic nonmagnetic feature. Recent studies have proved that substitutional doping is an effective route to alter the magnetic properties of two-dimensional transition-metal dichalcogenides (TMDs). However, highly valid and repeatable substitutional doping of TMDs remains to be developed. Herein, we report group VIII magnetic transition metal-doped molybdenum diselenide (MoSe2) single crystals via a one-pot mixed-salt-intermediated chemical vapor deposition method with high controllability and reproducibility. The high-angle annular dark-field scanning transmission electron microscopy studies further confirm that the sites of Fe are indeed substitutionally incorporated into the MoSe2 monolayer. The Fe-doped MoSe2 monolayer with a concentration from 0.93% to 6.10% could be obtained by controlling the ratios of FeCl3/Na2MoO4. Moreover, this strategy can be extended to create Co(Ni)-doped MoSe2 monolayers. The magnetic hysteresis (M-H) measurements demonstrate that group VIII magnetic transition-metal-doped MoSe2 samples exhibit room-temperature ferromagnetism. Additionally, the Fe-doped MoSe2 field effect transistor shows n-type semiconductor characteristics, indicating the obtainment of a room-temperature dilute magnetic semiconductor. Our approach is universal in magnetic transition-metal substitutional doping of TMDs, and it inspires further research interest in the study of related spintronic and magnetoelectric applications.
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Affiliation(s)
- Dingyi Shen
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Bei Zhao
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
- School of Physics and Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 211189, China
| | - Zucheng Zhang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Hongmei Zhang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Xiangdong Yang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Ziwei Huang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Bailing Li
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Rong Song
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Yejun Jin
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Ruixia Wu
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Bo Li
- School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Jia Li
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
| | - Xidong Duan
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082, China
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16
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Zhang Q, Xiao X, Li L, Geng D, Chen W, Hu W. Additive-Assisted Growth of Scaled and Quality 2D Materials. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2107241. [PMID: 35092150 DOI: 10.1002/smll.202107241] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/23/2021] [Revised: 12/19/2021] [Indexed: 06/14/2023]
Abstract
2D materials are increasingly becoming key components in modern electronics because of their prominent electronic and optoelectronic properties. The central and premise to the entire discipline of 2D materials lie in the high-quality and scaled preparations. The chemical vapor deposition (CVD) method offers compelling benefits in terms of scalability and controllability in shaping large-area and high-quality 2D materials. The past few years have witnessed development of numerous CVD growth strategies, with the use of additives attracting substantial attention in the production of scaled 2D crystals. This review provides an overview of different additives used in CVD growth of 2D materials, as well as a methodical demonstration of their vital roles. In addition, the intrinsic mechanisms of the production of scaled 2D crystals with additives are also discussed. Lastly, reliable guidance on the future design of optimal CVD synthesis routes is provided by analyzing the accessibility, pricing, by-products, controllability, universality, and commercialization of various additives.
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Affiliation(s)
- Qing Zhang
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou, 350207, China
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
| | - Xixi Xiao
- Department of Chemistry, Tianjin University & Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
| | - Lin Li
- Institute of Molecular Plus, Tianjin University, Tianjin, 300072, China
| | - Dechao Geng
- Department of Chemistry, Tianjin University & Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
| | - Wei Chen
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou, 350207, China
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
| | - Wenping Hu
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou, 350207, China
- Department of Chemistry, Tianjin University & Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China
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17
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Zhou R, Wu J, Chen Y, Xie L. Polymorph Structures, Rich Physical Properties and Potential Applications of
Two‐Dimensional MoTe
2
,
WTe
2
and Its Alloys. CHINESE J CHEM 2022. [DOI: 10.1002/cjoc.202100777] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Affiliation(s)
- Rui Zhou
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology Beijing 100190 China
- University of Chinese Academy of Sciences Beijing 100049 China
| | - Juanxia Wu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology Beijing 100190 China
| | - Yuansha Chen
- Beijing National Laboratory for Condensed Matter Physics & Institute of Physics, Chinese Academy of Sciences Beijing 100190 China
| | - Liming Xie
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology Beijing 100190 China
- University of Chinese Academy of Sciences Beijing 100049 China
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18
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Yao J, Yang G. 2D Layered Material Alloys: Synthesis and Application in Electronic and Optoelectronic Devices. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2103036. [PMID: 34719873 PMCID: PMC8728821 DOI: 10.1002/advs.202103036] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/15/2021] [Revised: 09/01/2021] [Indexed: 05/12/2023]
Abstract
2D layered materials (2DLMs) have come under the limelight of scientific and engineering research and broke new ground across a broad range of disciplines in the past decade. Nevertheless, the members of stoichiometric 2DLMs are relatively limited. This renders them incompetent to fulfill the multitudinous scenarios across the breadth of electronic and optoelectronic applications since the characteristics exhibited by a specific material are relatively monotonous and limited. Inspiringly, alloying of 2DLMs can markedly broaden the 2D family through composition modulation and it has ushered a whole new research domain: 2DLM alloy nano-electronics and nano-optoelectronics. This review begins with a comprehensive survey on synthetic technologies for the production of 2DLM alloys, which include chemical vapor transport, chemical vapor deposition, pulsed-laser deposition, and molecular beam epitaxy, spanning their development, as well as, advantages and disadvantages. Then, the up-to-date advances of 2DLM alloys in electronic devices are summarized. Subsequently, the up-to-date advances of 2DLM alloys in optoelectronic devices are summarized. In the end, the ongoing challenges of this emerging field are highlighted and the future opportunities are envisioned, which aim to navigate the coming exploration and fully exert the pivotal role of 2DLMs toward the next generation of electronic and optoelectronic devices.
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Affiliation(s)
- Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
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19
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Abstract
Salt-assisted chemical vapor deposition (SA-CVD), which uses halide salts (e.g., NaCl, KBr, etc.) and molten salts (e.g., Na2MoO4, Na2WO4, etc.) as precursors, is one of the most popular methods favored for the fabrication of two-dimensional (2D) materials such as atomically thin metal chalcogenides, graphene, and h-BN. In this review, the distinct functions of halogens (F, Cl, Br, I) and alkali metals (Li, Na, K) in SA-CVD are first clarified. Based on the current development in SA-CVD growth and its related reaction modes, the existing methods are categorized into the Salt 1.0 (halide salts-based) and Salt 2.0 (molten salts-based) techniques. The achievements, advantages, and limitations of each technique are discussed in detail. Finally, new perspectives are proposed for the application of SA-CVD in the synthesis of 2D transition metal dichalcogenides for advanced electronics.
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Affiliation(s)
- Shisheng Li
- International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS), Tsukuba 305-0044, Japan
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20
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Li W, Zeng Y, Zhao Z, Zhang B, Xu J, Huang X, Hou Y. 2D Magnetic Heterostructures and Their Interface Modulated Magnetism. ACS APPLIED MATERIALS & INTERFACES 2021; 13:50591-50601. [PMID: 34674524 DOI: 10.1021/acsami.1c11132] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
In recent years, two-dimensional (2D) magnetic heterostructures have captured widespread interest as they provide a fertile ground for exploring the novel properties induced by interfacial magnetic coupling, modulating the intrinsic magnetism of the 2D magnet, and exploiting new spintronic device applications. In this Spotlight on Applications, dominating synthetic strategies employed to fabricate 2D magnetic heterostructures are introduced first. Notably, we then concentrate on two different kinds of magnetic interfaces, namely, the magnetic-nonmagnetic interface and the magnetic-magnetic interface. Specifically, various interface modulated magnetisms such as valley splitting and the anomalous Hall effect as well as their related device applications such as magnetic tunnel junctions have been further reviewed and discussed. Finally, we briefly summarize the recent progress of 2D magnetic heterostructures and outline the future development direction of this booming field.
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Affiliation(s)
- Wei Li
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MMD), Beijing Innovation Center for Engineering Science and Advanced Technology (BIC-ESAT), School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Yi Zeng
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MMD), Beijing Innovation Center for Engineering Science and Advanced Technology (BIC-ESAT), School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Zijing Zhao
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MMD), Beijing Innovation Center for Engineering Science and Advanced Technology (BIC-ESAT), School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Biao Zhang
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MMD), Beijing Innovation Center for Engineering Science and Advanced Technology (BIC-ESAT), School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Junjie Xu
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MMD), Beijing Innovation Center for Engineering Science and Advanced Technology (BIC-ESAT), School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Xiaoxiao Huang
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MMD), Beijing Innovation Center for Engineering Science and Advanced Technology (BIC-ESAT), School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Yanglong Hou
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MMD), Beijing Innovation Center for Engineering Science and Advanced Technology (BIC-ESAT), School of Materials Science and Engineering, Peking University, Beijing 100871, China
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21
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Tursun M, Wu C. Vacancy-triggered and dopant-assisted NO electrocatalytic reduction over MoS 2. Phys Chem Chem Phys 2021; 23:19872-19883. [PMID: 34525138 DOI: 10.1039/d1cp02764f] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/20/2022]
Abstract
Nitric oxide electroreduction reaction (NOER) is an efficient method for NH3 synthesis and NOx-related pollutant treatment. However, current research on NOER catalysts mainly focuses on noble metals and single atom catalysts, while low-cost transition metal dichalcogenides (TMDCs) are rarely considered. Herein, by applying density functional theory (DFT) calculations, we study the catalytic performance of NOER over 2H-MoS2 monolayers with the most common S vacancies and some Mo atoms substituted by transition metal atoms (denoted as TM-MoS2@VS). Our results show that an S vacancy and a heteroatom substitution tend to form a first nearest neighbour (1NN) pair, which greatly improves the NOER catalytic performance of 2H-MoS2. The S vacancy site can trigger NOER by strongly adsorbing a NO molecule and elongating the NO bond, while the heteroatom dopant can assist NOER by tuning the electron donating capability of 2H-MoS2 which breaks the linear scaling relations among key reaction intermediates. At low NO coverage, NH3 can be correspondingly yielded at -0.06 and -0.38 V onset potentials over the Pt- and Au-doped MoS2 catalysts with S vacancies (Pt-MoS2@VS and Au-MoS2@VS). At high NO coverage, N2O/N2 is thermodynamically favored. Meanwhile, the competing hydrogen evolution reaction (HER) is suppressed. Thus, the Pt-MoS2@VS catalysts are promising candidates for NOER. In addition, coupling the substitutional doping of Mo atoms to S vacancies presents great potential in improving the catalytic activity and selectivity of MoS2 for other reactions. In general, the strategy of coupling hetero-metal doping and chalcogen vacancy can be extended to enhance the catalytic activity of other TMDCs.
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Affiliation(s)
- Mamutjan Tursun
- Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an 710054, China. .,Xinjiang Laboratory of Native Medicinal and Edible Plant Resources Chemistry, College of Chemistry and Environmental Science, Kashgar University, Kashgar, Xinjiang, 844000, China
| | - Chao Wu
- Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an 710054, China.
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22
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Li B, Geng J, Ai H, Kong Y, Bai H, Lo KH, Ng KW, Kawazoe Y, Pan H. Design of 2D materials - MSi 2C xN 4-x (M = Cr, Mo, and W; x = 1 and 2) - with tunable electronic and magnetic properties. NANOSCALE 2021; 13:8038-8048. [PMID: 33900351 DOI: 10.1039/d1nr00461a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Two-dimensional (2D) materials have attracted increasing interest in the past decades due to their unique physical and chemical properties for diverse applications. In this work, we present a first-principles design on a novel 2D family, MSi2CxN4-x (M = Cr, Mo, and W; x = 1 and 2), based on density-functional theory (DFT). We find that all MSi2CxN4-x monolayers are stable by investigating their mechanic, dynamic, and thermodynamic properties. Interestingly, we see that the alignment of magnetic moments can be tuned to achieve non-magnetism (NM), ferromagnetism (FM), anti-ferromagnetism (AFM) or paramagnetism (PM) by arranging the positions of carbon atoms in the 2D systems. Accordingly, their electronic properties can be controlled to obtain semiconductor, half-metal, or metal. The FM states in half-metallic 2D systems are contributed to the hole-mediated double exchange, while the AFM states are induced by super-exchange. Our findings show that the physical properties of 2D systems can be tuned by compositional and structural engineering, especially the layer of C atoms, which may provide guidance on the design and fabrication of novel 2D materials with projected properties for multi-functional applications.
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Affiliation(s)
- Bowen Li
- Institute of Applied Physics and Materials Engineering, University of Macau, Macao SAR, 999078, P.R. China.
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23
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Enhanced Electrical Performance of Monolayer MoS 2 with Rare Earth Element Sm Doping. NANOMATERIALS 2021; 11:nano11030769. [PMID: 33803612 PMCID: PMC8002856 DOI: 10.3390/nano11030769] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/21/2021] [Revised: 03/09/2021] [Accepted: 03/16/2021] [Indexed: 11/17/2022]
Abstract
Rare earth (RE) element-doped two-dimensional (2D) transition metal dichalcogenides (TMDCs) with applications in luminescence and magnetics have received considerable attention in recent years. To date, the effect of RE element doping on the electronic properties of monolayer 2D-TMDCs remains unanswered due to challenges including the difficulty of achieving valid monolayer doping and introducing RE elements with distinct valence and atomic configurations. Herein, we report a unique strategy to grow the Sm-doped monolayer MoS2 film by using an atmospheric pressure chemical vapor deposition method with the substrate face down on top of the growth source. A stable monolayer triangular Sm-doped MoS2 was achieved. The threshold voltage of an Sm-doped MoS2-based field effect transistor (FET) moved from -12 to 0 V due to the p-type character impurity state introduced by Sm ions in monolayer MoS2. Additionally, the electrical performance of the monolayer MoS2-based FET was improved by RE element Sm doping, including a 500% increase of the on/off current ratio and a 40% increase of the FET's mobility. The electronic property enhancement resulted from Sm doping MoS2, which led internal lattice strain and changes in Fermi energy levels. These findings provide a general approach to synthesize RE element-doped monolayer 2D-TMDCs and to enrich their applications in electrical devices.
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24
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An J, Wang B, Shu C, Wu W, Sun B, Zhang Z, Li D, Li S. Research development of 2D materials based photodetectors towards mid‐infrared regime. NANO SELECT 2020. [DOI: 10.1002/nano.202000237] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/06/2023] Open
Affiliation(s)
- Junru An
- State Key Laboratory of Applied Optics Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun P. R. China
- University of Chinese Academy of Sciences (UCAS) Beijing P. R. China
| | - Bin Wang
- State Key Laboratory of Applied Optics Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun P. R. China
| | - Chang Shu
- Institute of Functional Nano and Soft Materials (FUNSOM) Jiangsu Key Laboratory for Carbon‐Based Functional Materials and Devices Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University Suzhou P. R. China
| | - Wenming Wu
- State Key Laboratory of Applied Optics Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun P. R. China
- University of Chinese Academy of Sciences (UCAS) Beijing P. R. China
| | - Baoquan Sun
- Institute of Functional Nano and Soft Materials (FUNSOM) Jiangsu Key Laboratory for Carbon‐Based Functional Materials and Devices Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University Suzhou P. R. China
| | - Zhiyu Zhang
- University of Chinese Academy of Sciences (UCAS) Beijing P. R. China
- Key Laboratory of Optical System Advanced Manufacturing Technology Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun China
| | - Dabing Li
- University of Chinese Academy of Sciences (UCAS) Beijing P. R. China
- State Key Laboratory of Luminescence and Applications Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun P. R. China
| | - Shaojuan Li
- State Key Laboratory of Applied Optics Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences Changchun P. R. China
- University of Chinese Academy of Sciences (UCAS) Beijing P. R. China
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Kim KY, Park G, Cho J, Kim J, Kim JS, Jung J, Park K, You CY, Oh IH. Intrinsic Magnetic Order of Chemically Exfoliated 2D Ruddlesden-Popper Organic-Inorganic Halide Perovskite Ultrathin Films. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2005445. [PMID: 33241618 DOI: 10.1002/smll.202005445] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/02/2020] [Revised: 10/29/2020] [Indexed: 06/11/2023]
Abstract
Thin film fabrication of 2D layered organic-inorganic hybrid perovskites (2D-OIHPs) for spintronic applications has been attempted using solution-based process like Langmuir-Blodgett technique. However, monolayer or few-layered 2D magnets are not yet realized, even though a wide spectrum of 2D Ruddlesden-Popper (RP) OIHPs are known as quasi-2D Heisenberg magnets in bulk compounds. Here, chemical exfoliation by solvent engineering is applied to successfully synthesize large-sized, few unit-cell-thick 2D RP-OIHPs. Comprehensive structural characterization reveals that binary co-solvents with high relative polarity in spin coating technique are the most effective among nine kinds of solvents. Above all, this enables few-layered 2D RP-OIHP ultrathin films sustaining their intrinsic magnetic order. It is found that XY-like magnetic anisotropy driven by Jahn-Teller effect responsible for ferromagnetism in seven-layered (C6 H5 CH2 CH2 NH3 )2 CuCl4 ultrathin films remains very robust, whereas Ising-like dipolar anisotropy responsible for canted antiferromagnetism in ten-layered (C6 H5 CH2 CH2 NH3 )2 MnCl4 ultrathin films is greatly reduced. It is expected that ferromagnetism even at monolayer limit should be possible by means of further sophisticated solvent engineering as long as Jahn-Teller effect is active. The chemical exfoliation using solvent engineering unambiguously can bring about a new breakthrough in the development of 2D RP-OIHP van der Waals magnets for ultrahigh energy-efficient spintronic, opto-spintronic devices.
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Affiliation(s)
- Ki-Yeon Kim
- Quantum Beam Science Division, Korea Atomic Energy Research Institute, Daejeon, 34057, Republic of Korea
| | - Garam Park
- Nuclear Chemistry Research Team, Korea Atomic Energy Research Institute, Daejeon, 34057, Republic of Korea
| | - Jaehun Cho
- Division of Nanotechnology, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea
| | - Joonwoo Kim
- Division of Nanotechnology, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea
| | - June-Seo Kim
- Division of Nanotechnology, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea
| | - Jinyong Jung
- Department of Emerging Materials Science, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea
| | - Kwonjin Park
- Department of Emerging Materials Science, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea
| | - Chun-Yeol You
- Department of Emerging Materials Science, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea
| | - In-Hwan Oh
- Quantum Beam Science Division, Korea Atomic Energy Research Institute, Daejeon, 34057, Republic of Korea
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