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Sun Q, Sadhu A, Lie S, Wong LH. Critical Review of Cu-Based Hole Transport Materials for Perovskite Solar Cells: From Theoretical Insights to Experimental Validation. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2402412. [PMID: 38767270 DOI: 10.1002/adma.202402412] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/16/2024] [Revised: 05/17/2024] [Indexed: 05/22/2024]
Abstract
Despite the remarkable efficiency of perovskite solar cells (PSCs), long-term stability remains the primary barrier to their commercialization. The prospect of enhancing stability by substituting organic transport layers with suitable inorganic compounds, particularly Cu-based inorganic hole-transport materials (HTMs), holds promise due to their high valence band maximum (VBM) aligning with perovskite characteristics. This review assesses the advantages and disadvantages of these five types of Cu-based HTMs. Although Cu-based binary oxides and chalcogenides face narrow bandgap issues, the "chemical modulation of the valence band" (CMVB) strategy has successfully broadened the bandgap for Cu-based ternary oxides and chalcogenides. However, Cu-based ternary oxides encounter challenges with low mobility, and Cu-based ternary chalcogenides face mismatches in VBM alignment with perovskites. Cu-based binary halides, especially CuI, exhibit excellent properties such as wider bandgap, high mobility, and defect tolerance, but their stability remains a concern. These limitations of single anion compounds are insightfully discussed, offering solutions from the perspective of practical application. Future research can focus on Cu-based composite anion compounds, which merge the advantages of single anion compounds. Additionally, mixed-cation chalcogenides such as CuxM1-xS enable the customization of HTM properties by selecting and adjusting the proportions of cation M.
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Affiliation(s)
- Qingde Sun
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Ave, Singapore, 639798, Singapore
| | - Anupam Sadhu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Ave, Singapore, 639798, Singapore
| | - Stener Lie
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Ave, Singapore, 639798, Singapore
| | - Lydia Helena Wong
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Ave, Singapore, 639798, Singapore
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2
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Liu A, Kim YS, Kim MG, Reo Y, Zou T, Choi T, Bai S, Zhu H, Noh YY. Selenium-alloyed tellurium oxide for amorphous p-channel transistors. Nature 2024; 629:798-802. [PMID: 38599238 PMCID: PMC11111403 DOI: 10.1038/s41586-024-07360-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/07/2023] [Accepted: 03/27/2024] [Indexed: 04/12/2024]
Abstract
Compared to polycrystalline semiconductors, amorphous semiconductors offer inherent cost-effective, simple and uniform manufacturing. Traditional amorphous hydrogenated Si falls short in electrical properties, necessitating the exploration of new materials. The creation of high-mobility amorphous n-type metal oxides, such as a-InGaZnO (ref. 1), and their integration into thin-film transistors (TFTs) have propelled advancements in modern large-area electronics and new-generation displays2-8. However, finding comparable p-type counterparts poses notable challenges, impeding the progress of complementary metal-oxide-semiconductor technology and integrated circuits9-11. Here we introduce a pioneering design strategy for amorphous p-type semiconductors, incorporating high-mobility tellurium within an amorphous tellurium suboxide matrix, and demonstrate its use in high-performance, stable p-channel TFTs and complementary circuits. Theoretical analysis unveils a delocalized valence band from tellurium 5p bands with shallow acceptor states, enabling excess hole doping and transport. Selenium alloying suppresses hole concentrations and facilitates the p-orbital connectivity, realizing high-performance p-channel TFTs with an average field-effect hole mobility of around 15 cm2 V-1 s-1 and on/off current ratios of 106-107, along with wafer-scale uniformity and long-term stabilities under bias stress and ambient ageing. This study represents a crucial stride towards establishing commercially viable amorphous p-channel TFT technology and complementary electronics in a low-cost and industry-compatible manner.
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Affiliation(s)
- Ao Liu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, China.
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea.
- Department of Chemistry, Northwestern University, Evanston, IL, USA.
| | - Yong-Sung Kim
- Korea Research Institute of Standards and Science, Daejeon, Republic of Korea
- Department of Nano Science, University of Science and Technology, Daejeon, Republic of Korea
| | - Min Gyu Kim
- Beamline Research Division, Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang, Republic of Korea
| | - Youjin Reo
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea
| | - Taoyu Zou
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea
| | - Taesu Choi
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea
| | - Sai Bai
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, China
| | - Huihui Zhu
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea.
- Department of Chemistry, Northwestern University, Evanston, IL, USA.
- School of Physics, University of Electronic Science and Technology of China, Chengdu, China.
| | - Yong-Young Noh
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea.
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3
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Jamshidi M, Gardner JM. Copper(I) Iodide Thin Films: Deposition Methods and Hole-Transporting Performance. Molecules 2024; 29:1723. [PMID: 38675543 PMCID: PMC11052123 DOI: 10.3390/molecules29081723] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/13/2024] [Revised: 04/05/2024] [Accepted: 04/08/2024] [Indexed: 04/28/2024] Open
Abstract
The pursuit of p-type semiconductors has garnered considerable attention in academia and industry. Among the potential candidates, copper iodide (CuI) stands out as a highly promising p-type material due to its conductivity, cost-effectiveness, and low environmental impact. CuI can be employed to create thin films with >80% transparency within the visible range (400-750 nm) and utilizing various low-temperature, scalable deposition techniques. This review summarizes the deposition techniques for CuI as a hole-transport material and their performance in perovskite solar cells, thin-film transistors, and light-emitting diodes using diverse processing methods. The preparation methods of making thin films are divided into two categories: wet and neat methods. The advancements in CuI as a hole-transporting material and interface engineering techniques hold promising implications for the continued development of such devices.
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Affiliation(s)
- Mahboubeh Jamshidi
- Department of Chemistry, Division of Applied Physical Chemistry, KTH Royal Institute of Technology, SE-10044 Stockholm, Sweden
| | - James M. Gardner
- Department of Chemistry, Division of Applied Physical Chemistry, KTH Royal Institute of Technology, SE-10044 Stockholm, Sweden
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4
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Xue R, Gao G, Yang L, Xu L, Zhang Y, Zhu J. The impact of thickness-related grain boundary migration on hole concentration and mobility of p-type transparent conducting CuI films. RSC Adv 2024; 14:9072-9079. [PMID: 38500616 PMCID: PMC10945372 DOI: 10.1039/d4ra00704b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/27/2024] [Accepted: 03/11/2024] [Indexed: 03/20/2024] Open
Abstract
CuI films present promising optoelectronic properties for transparent conductors. However, the high hole concentration in CuI films hinders the controllable modulation of hole mobility, limiting their application in low-dimensional thin-film transistors. In this study, CuI films were prepared through a Cu film iodination method at room temperature, and a systematic investigation was conducted on the modulation of hole concentration and mobility with varying film thickness. The films exhibited a zinc blende structure (γ-phase) with increasing grain size as the thickness increased. The transmittance and optical bandgap of the films decreased with increasing thickness. The correlation of vacancy concentration with changing film thickness was analyzed through photoluminescence spectroscopy, revealing the influence of grain boundary migration on vacancy formation. The reduction in film thickness diminishes the migration of CuI grain boundaries, consequently reducing the probability of Cu vacancy and I vacancy formation, resulting in diminished hole concentration and enhanced hole mobility and film conductivity. The film with a thickness of 20 nm demonstrated optimal performance, with a transmittance of 90%, hole concentration of 4.09 × 1017 cm-3, hole mobility of 506.50 cm2 V-1 s-1, and conductivity of 33.19 S cm-1. This work deepens the understanding of hole transport such as hole concentration and mobility modulation in CuI films, highlighting the importance of controlling grain boundary migration during the film growth process.
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Affiliation(s)
- Ruibin Xue
- National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology Harbin 150080 P. R. China
| | - Gang Gao
- National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology Harbin 150080 P. R. China
| | - Lei Yang
- Center of Analysis Measurement, Harbin Institute of Technology Harbin 150001 P. R. China
| | - Liangge Xu
- National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology Harbin 150080 P. R. China
| | - Yumin Zhang
- National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology Harbin 150080 P. R. China
| | - Jiaqi Zhu
- National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology Harbin 150080 P. R. China
- Zhengzhou Research Institute, Harbin Institute of Technology Zhengzhou 450046 P. R. China
- Key Laboratory of Micro-systems and Micro-structures Manufacturing Ministry of Education, Harbin Institute of Technology Harbin 150080 P. R. China
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5
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Demirok AC, Sahin H, Yagmurcukardes M. Ultra-thin double-layered hexagonal CuI: strain tunable properties and robust semiconducting behavior. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:215401. [PMID: 38354421 DOI: 10.1088/1361-648x/ad294d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/04/2023] [Accepted: 02/14/2024] [Indexed: 02/16/2024]
Abstract
In this study, the freestanding form of ultra-thin CuI crystals, which have recently been synthesized experimentally, and their strain-dependent properties are investigated by means of density functional theory calculations. Structural optimizations show that CuI crystallizes in a double-layered hexagonal crystal (DLHC) structure. While phonon calculations predict that DLHC CuI crystals are dynamically stable, subsequent vibrational spectrum analyzes reveal that this structure has four unique Raman-active modes, allowing it to be easily distinguished from similar ultra-thin two-dimensional materials. Electronically, DLHC CuI is found to be a semiconductor with a direct band gap of 3.24 eV which is larger than that of its wurtzite and zincblende phases. Furthermore, it is found that in both armchair (AC) and zigzag (ZZ) orientations the elastic instabilities occur over the high strain strengths indicating the soft nature of CuI layer. In addition, the stress-strain curve along the AC direction reveal that DLHC CuI undergoes a structural phase transition between the 4% and 5% tensile uniaxial strains as indicated by a sudden drop of the stress in the lattice. Moreover, the phonon band dispersions show that the phononic instability occurs at much smaller strain along the ZZ direction than that of along the AC direction. Furthermore, the external strain direction can be deduced from the predicted Raman spectra through the splitting rates of the doubly degenerate in-plane vibrations. The mobility of the hole carriers display highly anisotropic characteristic as the applied strain reaches 5% along the AC direction. Due to its anomalous strain-dependent electronic features and elastically soft nature, DLHC of CuI is a potential candidate for future electro-mechanical applications.
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Affiliation(s)
- A C Demirok
- Department of Photonics, Izmir Institute of Technology, 35430 Izmir, Turkey
| | - H Sahin
- Department of Photonics, Izmir Institute of Technology, 35430 Izmir, Turkey
| | - M Yagmurcukardes
- Department of Photonics, Izmir Institute of Technology, 35430 Izmir, Turkey
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6
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Panama G, Lee SS. Thermoelectric Sensor with CuI Supported on Rough Glass. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:105. [PMID: 38202560 PMCID: PMC10780811 DOI: 10.3390/nano14010105] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2023] [Revised: 12/26/2023] [Accepted: 12/30/2023] [Indexed: 01/12/2024]
Abstract
Thermoelectric generators convert heat into a potential difference with arrays of p- and n-type materials, a process that allows thermal energy harvesting and temperature detection. Thermoelectric sensors have attracted interest in relation to the creation of temperature and combustible gas sensors due to their simple operation principle and self-powering ability. CuI is an efficient p-type thermoelectric material that can be readily produced from a Cu layer by an iodination method. However, the vapor iodination of Cu has the disadvantage of weak adhesion on a bare glass substrate due to stress caused by crystal growth, limiting microfabrication applications of this process. This work presents a rough soda-lime glass substrate with nanoscale cavities to support the growth of a CuI layer, showing good adhesion and enhanced thermoelectric sensitivity. A rough glass sample with nanocavities is developed by reactive ion etching of a photoresist-coated glass sample in which aggregates of carbon residuals and the accumulation of NaF catalyze variable etching rates to produce local isotropic etching and roughening. A thermoelectric sensor consists of 41 CuI/In-CoSb3 thermoelectric leg pairs with gold electrodes for electrical interconnection. A thermoelectric leg has a width of 25 μm, a length of 3 mm, and a thickness of 1 μm. The thermoelectric response results in an open-circuit voltage of 13.7 mV/K on rough glass and 0.9 mV/K on bare glass under ambient conditions. Rough glass provides good mechanical interlocking and introduces important variations of the crystallinity and composition in the supported thermoelectric layers, leading to enhanced thermopower.
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Affiliation(s)
| | - Seung S. Lee
- Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea;
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7
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Willis J, Claes R, Zhou Q, Giantomassi M, Rignanese GM, Hautier G, Scanlon DO. Limits to Hole Mobility and Doping in Copper Iodide. CHEMISTRY OF MATERIALS : A PUBLICATION OF THE AMERICAN CHEMICAL SOCIETY 2023; 35:8995-9006. [PMID: 38027540 PMCID: PMC10653089 DOI: 10.1021/acs.chemmater.3c01628] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/29/2023] [Revised: 10/09/2023] [Accepted: 10/09/2023] [Indexed: 12/01/2023]
Abstract
Over one hundred years have passed since the discovery of the p-type transparent conducting material copper iodide, predating the concept of the "electron-hole" itself. Supercentenarian status notwithstanding, little is understood about the charge transport mechanisms in CuI. Herein, a variety of modeling techniques are used to investigate the charge transport properties of CuI, and limitations to the hole mobility over experimentally achievable carrier concentrations are discussed. Poor dielectric response is responsible for extensive scattering from ionized impurities at degenerately doped carrier concentrations, while phonon scattering is found to dominate at lower carrier concentrations. A phonon-limited hole mobility of 162 cm2 V-1 s-1 is predicted at room temperature. The simulated charge transport properties for CuI are compared to existing experimental data, and the implications for future device performance are discussed. In addition to charge transport calculations, the defect chemistry of CuI is investigated with hybrid functionals, revealing that reasonably localized holes from the copper vacancy are the predominant source of charge carriers. The chalcogens S and Se are investigated as extrinsic dopants, where it is found that despite relatively low defect formation energies, they are unlikely to act as efficient electron acceptors due to the strong localization of holes and subsequent deep transition levels.
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Affiliation(s)
- Joe Willis
- Department
of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, U.K.
- Thomas
Young Centre, University College London, Gower Street, London WC1E 6BT, U.K.
| | - Romain Claes
- UCLouvain,
Institute of Condensed Matter and Nanosciences (IMCN), Chemin des Étoiles 8, Louvain-la-Neuve B-1348, Belgium
| | - Qi Zhou
- Department
of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, U.K.
- Thomas
Young Centre, University College London, Gower Street, London WC1E 6BT, U.K.
| | - Matteo Giantomassi
- UCLouvain,
Institute of Condensed Matter and Nanosciences (IMCN), Chemin des Étoiles 8, Louvain-la-Neuve B-1348, Belgium
| | - Gian-Marco Rignanese
- UCLouvain,
Institute of Condensed Matter and Nanosciences (IMCN), Chemin des Étoiles 8, Louvain-la-Neuve B-1348, Belgium
| | - Geoffroy Hautier
- UCLouvain,
Institute of Condensed Matter and Nanosciences (IMCN), Chemin des Étoiles 8, Louvain-la-Neuve B-1348, Belgium
- Thayer
School of Engineering, Dartmouth College, Hanover, New Hampshire 03755, United States
| | - David O. Scanlon
- Department
of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, U.K.
- Thomas
Young Centre, University College London, Gower Street, London WC1E 6BT, U.K.
- School
of Chemistry, University of Birmingham, Edgbaston, Birmingham B15 2TT, U.K.
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8
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Tang J, Ge F, Chen J, Zhou D, Zhan G, Liu J, Yuan J, Shi X, Zhao P, Fan X, Su Y, Liu Z, He J, Tang J, Zha C, Zhang L, Song X, Wang L. A Droplet Method for Synthesis of Multiclass Ultrathin Metal Halides. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2301573. [PMID: 37365697 DOI: 10.1002/smll.202301573] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/21/2023] [Revised: 05/28/2023] [Indexed: 06/28/2023]
Abstract
2D metal halides have attracted increasing research attention in recent years; however, it is still challenging to synthesize them via liquid-phase methods. Here it is demonstrated that a droplet method is simple and efficient for the synthesis of multiclass 2D metal halides, including trivalent (BiI3 , SbI3 ), divalent (SnI2 , GeI2 ), and monovalent (CuI) ones. In particular, 2D SbI3 is first experimentally achieved, of which the thinnest thickness is ≈6 nm. The nucleation and growth of these metal halide nanosheets are mainly determined by the supersaturation of precursor solutions that are dynamically varying during the solution evaporation. After solution drying, the nanosheets can fall on the surface of many different substrates, which further enables the feasible fabrication of related heterostructures and devices. With SbI3 /WSe2 being a good demonstration, the photoluminescence intensity and photo responsivity of WSe2 is obviously enhanced after interfacing with SbI3 . The work opens a new pathway for 2D metal halides toward widespread investigation and applications.
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Affiliation(s)
- Jin Tang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Feixiang Ge
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Jinlian Chen
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Dawei Zhou
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Guixiang Zhan
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Jing Liu
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Jiaxiao Yuan
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Xinyu Shi
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Peiyi Zhao
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Xinlin Fan
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Yu Su
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Zicong Liu
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Jiahao He
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Jiaqi Tang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Chenyang Zha
- Institute of Applied Physics and Materials Engineering (IAPME), Zhuhai UM Science & Technology Research Institute (ZUMRI), University of Macau, Taipa, Macau SAR, 999078, China
| | - Linghai Zhang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Xuefen Song
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Lin Wang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
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9
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Wu ZF, Wang C, Liu X, Tan K, Fu Z, Teat SJ, Li ZW, Hei X, Huang XY, Xu G, Li J. Confinement of 1D Chain and 2D Layered CuI Modules in K-INA-R Frameworks via Coordination Assembly: Structure Regulation and Semiconductivity Tuning. J Am Chem Soc 2023; 145:19293-19302. [PMID: 37616202 DOI: 10.1021/jacs.3c05095] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/26/2023]
Abstract
Herein, we present a new series of CuI-based hybrid materials with tunable structures and semiconducting properties. The CuI inorganic modules can be tailored into a one-dimensional (1D) chain and two-dimensional (2D) layer and confined/stabilized in coordination frameworks of potassium isonicotinic acid (HINA) and its derivatives (HINA-R, R = OH, NO2, and COOH). The resulting CuI-based hybrid materials exhibit interesting semiconducting behaviors associated with the dimensionality of the inorganic module; for instance, the structures containing the 2D-CuI module demonstrate significantly enhanced photoconductivity with a maximum increase of five orders of magnitude compared to that of the structures containing the 1D-CuI module. They also represent the first CuI-bearing hybrid chemiresistive gas sensors for NO2 with boosted sensing performance and sensitivity at multiple orders of magnitude over that of the pristine CuI. Particularly, the sensing ability of CuI-K-INA containing both 1D- and 2D-CuI modules is comparable to those of the best NO2 chemiresistors reported thus far.
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Affiliation(s)
- Zhao-Feng Wu
- Department of Chemistry and Chemical Biology, Rutgers University, 123 Bevier Rd. Piscataway, New Brunswick, New Jersey 08854, United States
- State Key Laboratory of Structural Chemistry, Fujian Provincial Key Laboratory of Materials and Techniques toward Hydrogen Energy, Fujian Institute of Research on the Structure of Matter, the Chinese Academy of Sciences, Fuzhou, Fujian 350002, P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, P. R. China
| | - Chuanzhe Wang
- State Key Laboratory of Structural Chemistry, Fujian Provincial Key Laboratory of Materials and Techniques toward Hydrogen Energy, Fujian Institute of Research on the Structure of Matter, the Chinese Academy of Sciences, Fuzhou, Fujian 350002, P. R. China
| | - Xingwu Liu
- Synfuels China Technology Co.Ltd., Leyuan Second South Street Yanqi Development Zone Huairou, Beijing 101407, P. R. China
| | - Kui Tan
- Department of Chemistry, University of North Texas, 1155 Union Cir, Denton, Texas 76203, United States
| | - Zhihua Fu
- State Key Laboratory of Structural Chemistry, Fujian Provincial Key Laboratory of Materials and Techniques toward Hydrogen Energy, Fujian Institute of Research on the Structure of Matter, the Chinese Academy of Sciences, Fuzhou, Fujian 350002, P. R. China
| | - Simon J Teat
- Advanced Light Source, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, United States
| | - Zi-Wei Li
- State Key Laboratory of Structural Chemistry, Fujian Provincial Key Laboratory of Materials and Techniques toward Hydrogen Energy, Fujian Institute of Research on the Structure of Matter, the Chinese Academy of Sciences, Fuzhou, Fujian 350002, P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, P. R. China
| | - Xiuze Hei
- Department of Chemistry and Chemical Biology, Rutgers University, 123 Bevier Rd. Piscataway, New Brunswick, New Jersey 08854, United States
| | - Xiao-Ying Huang
- State Key Laboratory of Structural Chemistry, Fujian Provincial Key Laboratory of Materials and Techniques toward Hydrogen Energy, Fujian Institute of Research on the Structure of Matter, the Chinese Academy of Sciences, Fuzhou, Fujian 350002, P. R. China
| | - Gang Xu
- State Key Laboratory of Structural Chemistry, Fujian Provincial Key Laboratory of Materials and Techniques toward Hydrogen Energy, Fujian Institute of Research on the Structure of Matter, the Chinese Academy of Sciences, Fuzhou, Fujian 350002, P. R. China
| | - Jing Li
- Department of Chemistry and Chemical Biology, Rutgers University, 123 Bevier Rd. Piscataway, New Brunswick, New Jersey 08854, United States
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10
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Tiadi M, Trivedi V, Kumar S, Jain PK, Yadav SK, Gopalan R, Satapathy DK, Battabyal M. Enhanced Thermoelectric Efficiency in P-Type Mg 3Sb 2: Role of Monovalent Atoms Codoping at Mg sites. ACS APPLIED MATERIALS & INTERFACES 2023; 15:20175-20190. [PMID: 37067866 DOI: 10.1021/acsami.3c02151] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Due to natural abundance, low cost, and compatibility with sustainable green technology, Mg3Sb2-based Zintl compounds are comprehensively explored as potential thermoelectric materials for near-room temperature applications. The effective use of these materials in thermoelectric devices requires both p and n-type Mg3Sb2 having comparable thermoelectric efficiency. However, p-type Mg3Sb2 has inferior thermoelectric efficiency efficiency compared to its n-type counterpart due to low electrical conductivity (∼103Sm-1). Here, we show that codoping of monovalent atoms (Li-Ag, and Na-Ag) at the Mg site of Mg3Sb2 produces a synergistic effect and boosts the electrical conductivity, which enhances the thermoelectric properties of p-type Mg3Sb2. While, Ag prefers to occupy the Mg2 site, Li and Na are favorable at the Mg1 site of Mg3Sb2 lattice. Compared to Li-Ag codoping, Na-Ag codoping in Mg3Sb2 is found to be more effective for increasing the charge carrier concentration and significantly augmenting the electrical conductivity. The dominance of the three-phonon scattering mechanism in Li and Li-Ag doped Mg3Sb2 and the four-phonon scattering process for the Na and Na-Ag doped Mg3Sb2 are confirmed. Due to the simultaneous increase in electrical conductivity and decrease in thermal conductivity, the zT value ∼0.8 at 675 K achieved for Mg2.975Na0.02Ag0.005Sb2 is the highest value among p-type Mg3Sb2. Our work shows a constructive approach to enhance the zT of p-type Mg3Sb2 via monovalent atoms codoping at the Mg sites.
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Affiliation(s)
- Minati Tiadi
- International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), IIT M Research Park, Chennai 600113, India
- Soft Materials Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
| | - Vikrant Trivedi
- International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), IIT M Research Park, Chennai 600113, India
- Department of Metallurgical and Materials Engineering, Indian Institute of Technology Madras, Chennai 600036, India
| | - Santosh Kumar
- Soft Materials Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
| | - P K Jain
- International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), Balapur, Hyderabad 500005, Telangana, India
| | - Satyesh Kumar Yadav
- Center for Atomistic Modeling and Materials Design, Indian Institute of Technology Madras, Chennai 600036, India
| | - R Gopalan
- International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), IIT M Research Park, Chennai 600113, India
- Department of Metallurgical and Materials Engineering, Indian Institute of Technology Madras, Chennai 600036, India
| | - Dillip K Satapathy
- Soft Materials Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
| | - Manjusha Battabyal
- International Advanced Research Centre for Powder Metallurgy and New Materials (ARCI), IIT M Research Park, Chennai 600113, India
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11
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Bericat-Vadell R, Zou X, Drillet M, Corvoysier H, Silveira VR, Konezny SJ, Sá J. Carrier Dynamics in Solution-Processed CuI as a P-Type Semiconductor: The Origin of Negative Photoconductivity. J Phys Chem Lett 2023; 14:1007-1013. [PMID: 36693133 PMCID: PMC9900634 DOI: 10.1021/acs.jpclett.2c03720] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/07/2022] [Accepted: 01/20/2023] [Indexed: 06/17/2023]
Abstract
There is an urgent need for efficient solution-processable p-type semiconductors. Copper(I) iodide (CuI) has attracted attention as a potential candidate due to its good electrical properties and ease of preparation. However, its carrier dynamics still need to be better understood. Carrier dynamics after bandgap excitation yielded a convoluted signal of free carriers (positive signal) and a negative feature, which was also present when the material was excited with sub-bandgap excitation energies. This previously unseen feature was found to be dependent on measurement temperature and attributed to negative photoconductivity. The unexpected signal relates to the formation of polarons or strongly bound excitons. The possibility of coupling CuI to plasmonic sensitizers is also tested, yielding positive results. The outcomes mentioned above could have profound implications regarding the applicability of CuI in photocatalytic and photovoltaic systems and could also open a whole new range of possible applications.
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Affiliation(s)
- Robert Bericat-Vadell
- Physical
Chemistry Division, Department of Chemistry - Angstrom Laboratory, Uppsala University, Box 523, 751 20Uppsala, Sweden
| | - Xianshao Zou
- Physical
Chemistry Division, Department of Chemistry - Angstrom Laboratory, Uppsala University, Box 523, 751 20Uppsala, Sweden
| | - Mélio Drillet
- Physical
Chemistry Division, Department of Chemistry - Angstrom Laboratory, Uppsala University, Box 523, 751 20Uppsala, Sweden
| | - Hugo Corvoysier
- Physical
Chemistry Division, Department of Chemistry - Angstrom Laboratory, Uppsala University, Box 523, 751 20Uppsala, Sweden
| | - Vitor R. Silveira
- Physical
Chemistry Division, Department of Chemistry - Angstrom Laboratory, Uppsala University, Box 523, 751 20Uppsala, Sweden
| | - Steven J. Konezny
- Departments
of Physics and Chemistry and Energy Sciences Institute, Yale University, 217 Prospect Street, P.O. Box
208120, New Haven, Connecticut06520-8120, United States
| | - Jacinto Sá
- Physical
Chemistry Division, Department of Chemistry - Angstrom Laboratory, Uppsala University, Box 523, 751 20Uppsala, Sweden
- Institute
of Physical Chemistry, Polish Academy of
Sciences, Marcina Kasprzaka
44/52, 01-224Warsaw, Poland
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12
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Yu SH, Hassan SZ, So C, Kang M, Chung DS. Molecular-Switch-Embedded Solution-Processed Semiconductors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2203401. [PMID: 35929102 DOI: 10.1002/adma.202203401] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/14/2022] [Revised: 08/03/2022] [Indexed: 06/15/2023]
Abstract
Recent improvements in the performance of solution-processed semiconductor materials and optoelectronic devices have shifted research interest to the diversification/advancement of their functionality. Embedding a molecular switch capable of transition between two or more metastable isomers by light stimuli is one of the most straightforward and widely accepted methods to potentially realize the multifunctionality of optoelectronic devices. A molecular switch embedded in a semiconductor can effectively control various parameters such as trap-level, dielectric constant, electrical resistance, charge mobility, and charge polarity, which can be utilized in photoprogrammable devices including transistors, memory, and diodes. This review classifies the mechanism of each optoelectronic transition driven by molecular switches regardless of the type of semiconductor material or molecular switch or device. In addition, the basic characteristics of molecular switches and the persisting technical/scientific issues corresponding to each mechanism are discussed to help researchers. Finally, interesting yet infrequently reported applications of molecular switches and their mechanisms are also described.
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Affiliation(s)
- Seong Hoon Yu
- Department of Chemical Engineering, Pohang University of Science & Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Syed Zahid Hassan
- Department of Chemical Engineering, Pohang University of Science & Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Chan So
- Department of Chemical Engineering, Pohang University of Science & Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Mingyun Kang
- Department of Chemical Engineering, Pohang University of Science & Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Dae Sung Chung
- Department of Chemical Engineering, Pohang University of Science & Technology (POSTECH), Pohang, 37673, Republic of Korea
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13
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Schmidl G, Jia G, Gawlik A, Lorenz P, Zieger G, Dellith J, Diegel M, Plentz J. Copper Iodide on Spacer Fabrics as Textile Thermoelectric Device for Energy Generation. MATERIALS (BASEL, SWITZERLAND) 2022; 16:13. [PMID: 36614351 PMCID: PMC9821746 DOI: 10.3390/ma16010013] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/03/2022] [Revised: 12/08/2022] [Accepted: 12/14/2022] [Indexed: 06/17/2023]
Abstract
The integration of electronic functionalities into textiles for use as wearable sensors, energy harvesters, or coolers has become increasingly important in recent years. A special focus is on efficient thermoelectric materials. Copper iodide as a p-type thermoelectrically active, nontoxic material is attractive for energy harvesting and energy generation because of its transparency and possible high-power factor. The deposition of CuI on polyester spacer fabrics by wet chemical processes represents a great potential for use in textile industry for example as flexible thermoelectric energy generators in the leisure or industrial sector as well as in medical technologies. The deposited material on polyester yarn is investigated by electron microscopy, x-ray diffraction and by thermoelectric measurements. The Seebeck coefficient was observed between 112 and 153 µV/K in a temperature range between 30 °C and 90 °C. It is demonstrated that the maximum output power reached 99 nW at temperature difference of 65.5 K with respect to room temperature for a single textile element. However, several elements can be connected in series and the output power can be linear upscaled. Thus, CuI coated on 3D spacer fabrics can be attractive to fabricate thermoelectric devices especially in the lower temperature range for textile medical or leisure applications.
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14
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Tsay CY, Chen YC, Tsai HM, Sittimart P, Yoshitake T. The Role of Zn Substitution in Improving the Electrical Properties of CuI Thin Films and Optoelectronic Performance of CuI MSM Photodetectors. MATERIALS (BASEL, SWITZERLAND) 2022; 15:8145. [PMID: 36431630 PMCID: PMC9694342 DOI: 10.3390/ma15228145] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/21/2022] [Revised: 11/07/2022] [Accepted: 11/14/2022] [Indexed: 06/16/2023]
Abstract
Pure CuI and Zn-substituted CuI (CuI:Zn) semiconductor thin films, and metal-semiconductor-metal (MSM) photodetectors were fabricated on glass substrates by a low-temperature solution process. The influence of Zn substitution concentration (0-12 at%) on the microstructural, optical, and electrical characteristics of CuI thin films and its role in improving the optoelectronic performance of CuI MSM photodetectors were investigated in this study. Incorporation of Zn cation dopant into CuI thin films improved the crystallinity and increased the average crystalline size. XPS analysis revealed that the oxidation state of Cu ions in all the CuI-based thin films was +1, and the estimated values of [Cu]/[I] for the CuI:Zn thin films were lower than 0.9. It was found that the native p-type conductivity of polycrystalline CuI thin film was converted to n-type conductivity after the incorporation of Zn ions into CuI nanocrystals, and the electrical resistivity decreased with increases in Zn concentration. A time-resolved photocurrent study indicated that the improvements in the optoelectronic performance of CuI MSM photodetectors were obtained through the substitution of Zn ions, which provided operational stability to the two-terminal optoelectronic device. The 8 at% Zn-substituted CuI photodetectors exhibited the highest response current, responsivity, and EQE, as well as moderate specific detectivity.
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Affiliation(s)
- Chien-Yie Tsay
- Department of Materials Science and Engineering, Feng Chia University, Taichung 40724, Taiwan
| | - Yun-Chi Chen
- Department of Materials Science and Engineering, Feng Chia University, Taichung 40724, Taiwan
| | - Hsuan-Meng Tsai
- Department of Materials Science and Engineering, Feng Chia University, Taichung 40724, Taiwan
| | - Phongsaphak Sittimart
- Department of Advanced Energy Science and Engineering, Kyushu University, Fukuoka 816-8580, Japan
| | - Tsuyoshi Yoshitake
- Department of Advanced Energy Science and Engineering, Kyushu University, Fukuoka 816-8580, Japan
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15
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Li Z, Wu H, Cao H, Liang L, Han Y, Yang J, Song Y, Burda C. Improved Ultrafast Carrier Relaxation and Charge Transfer Dynamics in CuI Films and Their Heterojunctions via Sn Doping. J Phys Chem Lett 2022; 13:9072-9078. [PMID: 36154177 DOI: 10.1021/acs.jpclett.2c02354] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
CuI is one of the promising hole transport materials for perovskite solar cells. However, its tendency to form defects is currently limiting its use for device applications. Here, we report the successful improvement of CuI through Sn doping and the direct measurement of the carrier relaxation and interfacial charge-transfer processes in Sn-doped CuI films and their heterostructures. Femtosecond-transient absorption (fs-TA) measurements reveal that Sn doping effectively passivates the trap states within the bandgap of CuI. The I-V characteristics of heterostructures demonstrate drastic improvement in transport characteristics upon Sn doping. Fs-TA measurements further confirm that the CuSnI/ZnO heterojunction has a type-II configuration with ultrafast charge transfer (<280 fs). The charge transfer time of a CuI/ZnO heterostructure is ∼2.8 times slower than that of the CuSnI/ZnO heterostructure, indicating that Sn doping suppresses the interfacial states that retard the charge transfer. These results elucidate the effect of Sn doping on the performance of CuI-based heterostructures.
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Affiliation(s)
- Zhongguo Li
- School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu 215500, China
| | - Haijuan Wu
- Laboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Hongtao Cao
- Laboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Lingyan Liang
- Laboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Yanbing Han
- Department of Physics, Harbin Institute of Technology, Harbin 150001, China
| | - Junyi Yang
- School of Physical Science and Technology, Soochow University, Suzhou 215006, China
| | - Yinglin Song
- Department of Physics, Harbin Institute of Technology, Harbin 150001, China
| | - Clemens Burda
- Department of Chemistry, College of Arts and Sciences, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, Ohio 44106, United States
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16
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Kumar S, Battabyal M, K S, Satapathy DK. Thermoelectric properties of Ag-doped CuI: a temperature dependent optical phonon study. Phys Chem Chem Phys 2022; 24:24228-24237. [PMID: 36169015 DOI: 10.1039/d2cp02618j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Due to the natural abundance and non-toxicity of copper (Cu) and iodine (I), γ-CuI has been widely explored as a potential transparent thermoelectric material for near room temperature applications. Here, we report the effect of doping of an heavy atom such as silver (Ag) on the evolution of temperature-dependent optical phonon modes and thermoelectric properties of chemically synthesized single-phase nanocrystalline γ-CuI. We found that Ag doping reduces the lattice parameters of CuI and thereby confirms the occupancy of Ag atoms at the vacancy sites of CuI. The decrease in phonon lifetime with the increase in temperature, which strongly influences the lattice thermal conductivity, is established from temperature-dependent optical phonon vibrations study. The four-phonon/Umklapp scattering is found to be more prominent in undoped CuI, whereas three-phonon scattering is prominent in Ag-doped CuI. At low temperatures, an almost 90% increase in the Seebeck coefficient is observed for Ag-doped CuI compared to undoped CuI, which can be understood by taking into account a net decrease in the hole carrier concentration in doped CuI.
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Affiliation(s)
- Santosh Kumar
- Department of Physics, Indian Institute of Technology Madras, Chennai-600036, India.
| | - Manjusha Battabyal
- Centre for Automotive Energy Materials, ARCI, IITM Research Park, Chennai-600113, India.
| | - Sethupathi K
- Department of Physics, Indian Institute of Technology Madras, Chennai-600036, India.
| | - Dillip K Satapathy
- Department of Physics, Indian Institute of Technology Madras, Chennai-600036, India.
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17
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Xing R, Shi P, Wang D, Wu Z, Ge Y, Xing Y, Wei L, Yan S, Tian Y, Bai L, Chen Y. Flexible Self-Powered Weak Light Detectors Based on ZnO/CsPbBr 3/γ-CuI Heterojunctions. ACS APPLIED MATERIALS & INTERFACES 2022; 14:40093-40101. [PMID: 35833831 DOI: 10.1021/acsami.2c05422] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Halide perovskites (HPs) with marvelous optical and electrical properties are regarded as one of the competitive candidates for building next-generation photodetectors (PDs). However, combining their excellent properties with satisfactory long-term robustness is still challenging, ultimately limiting the practical applications of HP-based PDs. Herein, a high vacuum deposition system is employed to fabricate flexible self-powered PDs with a ZnO/CsPbBr3/γ-CuI structure, which shows excellent stability and outstanding performance in weak light detection. Benefiting from the improved crystallinity and optimized device structure, a high detectivity of 8.1 × 1013 Jones and a rapid response speed (rise/decay time of 3.9/1.8 μs) are obtained in this self-powered device. Furthermore, the unencapsulated device exhibits intriguing environmental stability and mechanical flexibility. The photocurrent remains unchanged after 7000 s of continuous operation or 100 bending cycles. Furthermore, a 15 × 15 PD array is fabricated as an image sensor. A high contrast image of the target object can be obtained owing to the high sensitivity and uniformity of the self-powered PDs. These results demonstrate the feasibility and practicality of the ZnO/CsPbBr3/γ-CuI heterojunction for applications in weak light detection and image formation.
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Affiliation(s)
- Ruofei Xing
- School of Physics, and State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Peng Shi
- School of Physics, and State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Dong Wang
- School of Physics, and State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Zhenfa Wu
- School of Physics, and State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Yufeng Ge
- School of Physics, and State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Yuzhi Xing
- School of Physics, and State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Lin Wei
- School of Microelectronics, and State Key Laboratory of Crystal Materials, Shandong University, Jinan 250101, China
| | - Shishen Yan
- School of Physics, and State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Yufeng Tian
- School of Physics, and State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Lihui Bai
- School of Physics, and State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Yanxue Chen
- School of Physics, and State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
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18
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Shen C, Yin Z, Collins F, Pinna N. Atomic Layer Deposition of Metal Oxides and Chalcogenides for High Performance Transistors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2104599. [PMID: 35712776 PMCID: PMC9376853 DOI: 10.1002/advs.202104599] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/15/2021] [Revised: 03/23/2022] [Indexed: 06/15/2023]
Abstract
Atomic layer deposition (ALD) is a deposition technique well-suited to produce high-quality thin film materials at the nanoscale for applications in transistors. This review comprehensively describes the latest developments in ALD of metal oxides (MOs) and chalcogenides with tunable bandgaps, compositions, and nanostructures for the fabrication of high-performance field-effect transistors. By ALD various n-type and p-type MOs, including binary and multinary semiconductors, can be deposited and applied as channel materials, transparent electrodes, or electrode interlayers for improving charge-transport and switching properties of transistors. On the other hand, MO insulators by ALD are applied as dielectrics or protecting/encapsulating layers for enhancing device performance and stability. Metal chalcogenide semiconductors and their heterostructures made by ALD have shown great promise as novel building blocks to fabricate single channel or heterojunction materials in transistors. By correlating the device performance to the structural and chemical properties of the ALD materials, clear structure-property relations can be proposed, which can help to design better-performing transistors. Finally, a brief concluding remark on these ALD materials and devices is presented, with insights into upcoming opportunities and challenges for future electronics and integrated applications.
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Affiliation(s)
- Chengxu Shen
- Institut für Chemie and IRIS AdlershofHumboldt‐Universität zu BerlinBrook‐Taylor‐Str. 2Berlin12489Germany
| | - Zhigang Yin
- Institut für Chemie and IRIS AdlershofHumboldt‐Universität zu BerlinBrook‐Taylor‐Str. 2Berlin12489Germany
- State Key Laboratory of Structural ChemistryFujian Institute of Research on the Structure of MatterChinese Academy of Sciences155 Yangqiao West RoadFuzhouFujian350002China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of ChinaFuzhouFujian350108China
| | - Fionn Collins
- Institut für Chemie and IRIS AdlershofHumboldt‐Universität zu BerlinBrook‐Taylor‐Str. 2Berlin12489Germany
| | - Nicola Pinna
- Institut für Chemie and IRIS AdlershofHumboldt‐Universität zu BerlinBrook‐Taylor‐Str. 2Berlin12489Germany
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19
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Research Progress of p-Type Oxide Thin-Film Transistors. MATERIALS 2022; 15:ma15144781. [PMID: 35888248 PMCID: PMC9323180 DOI: 10.3390/ma15144781] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/10/2022] [Revised: 07/02/2022] [Accepted: 07/04/2022] [Indexed: 02/05/2023]
Abstract
The development of transparent electronics has advanced metal–oxide–semiconductor Thin-Film transistor (TFT) technology. In the field of flat-panel displays, as basic units, TFTs play an important role in achieving high speed, brightness, and screen contrast ratio to display information by controlling liquid crystal pixel dots. Oxide TFTs have gradually replaced silicon-based TFTs owing to their field-effect mobility, stability, and responsiveness. In the market, n-type oxide TFTs have been widely used, and their preparation methods have been gradually refined; however, p-Type oxide TFTs with the same properties are difficult to obtain. Fabricating p-Type oxide TFTs with the same performance as n-type oxide TFTs can ensure more energy-efficient complementary electronics and better transparent display applications. This paper summarizes the basic understanding of the structure and performance of the p-Type oxide TFTs, expounding the research progress and challenges of oxide transistors. The microstructures of the three types of p-Type oxides and significant efforts to improve the performance of oxide TFTs are highlighted. Finally, the latest progress and prospects of oxide TFTs based on p-Type oxide semiconductors and other p-Type semiconductor electronic devices are discussed.
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20
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Storm P, Karimova K, Bar MS, Selle S, von Wenckstern H, Grundmann M, Lorenz M. Suppression of Rotational Domains of CuI Employing Sodium Halide Buffer Layers. ACS APPLIED MATERIALS & INTERFACES 2022; 14:12350-12358. [PMID: 35253419 DOI: 10.1021/acsami.1c24432] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The occurrence of rotational domains is a well-known issue for copper iodide (CuI) that naturally occurs for growth on popular substrates like sapphire. However, this has detrimental effects on the thin film quality like increasing surface roughness or deteriorated transport characteristics due to grain boundary scattering. Utilizing pulsed laser deposition and the in situ growth of sodium chloride (NaCl) and sodium bromide (NaBr) template layers, studies were performed on their potential on suppressing the formation of rotational domains of CuI on c-plane sapphire and SrF2(111) substrates. Corresponding samples were investigated concerning their epitaxial properties and further characterized regarding (volume) crystalline, morphological, and electrical properties. Particularly for NaBr template layers, fully single-crystalline growth of CuI thin films was obtained and resulted in significantly reduced surface roughness of the CuI layer.
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Affiliation(s)
- Philipp Storm
- Felix Bloch Institute for Solid State Physics, Universität Leipzig, 04103 Leipzig, Germany
| | - Khanim Karimova
- Felix Bloch Institute for Solid State Physics, Universität Leipzig, 04103 Leipzig, Germany
| | - Michael Sebastian Bar
- Felix Bloch Institute for Solid State Physics, Universität Leipzig, 04103 Leipzig, Germany
| | - Susanne Selle
- Fraunhofer Institute for Microstructure of Materials and Systems IMWS, 06120 Halle, Germany
| | - Holger von Wenckstern
- Felix Bloch Institute for Solid State Physics, Universität Leipzig, 04103 Leipzig, Germany
| | - Marius Grundmann
- Felix Bloch Institute for Solid State Physics, Universität Leipzig, 04103 Leipzig, Germany
| | - Michael Lorenz
- Felix Bloch Institute for Solid State Physics, Universität Leipzig, 04103 Leipzig, Germany
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21
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Effects of Iodine Doping on Electrical Characteristics of Solution-Processed Copper Oxide Thin-Film Transistors. MATERIALS 2021; 14:ma14206118. [PMID: 34683708 PMCID: PMC8537329 DOI: 10.3390/ma14206118] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/14/2021] [Revised: 10/05/2021] [Accepted: 10/12/2021] [Indexed: 02/07/2023]
Abstract
In order to implement oxide semiconductor-based complementary circuits, the improvement of the electrical properties of p-type oxide semiconductors and the performance of p-type oxide TFTs is certainly required. In this study, we report the effects of iodine doping on the structural and electrical characteristics of copper oxide (CuO) semiconductor films and the TFT performance. The CuO semiconductor films were fabricated using copper(II) acetate hydrate as a precursor to solution processing, and iodine doping was performed using vapor sublimated from solid iodine. Doped iodine penetrated the CuO film through grain boundaries, thereby inducing tensile stress in the film and increasing the film’s thickness. Iodine doping contributed to the improvement of the electrical properties of the solution-processed CuO semiconductor including increases in Hall mobility and hole-carrier concentration and a decrease in electrical resistivity. The CuO TFTs exhibited a conduction channel formation by holes, that is, p-type operation characteristics, and the TFT performance improved after iodine doping. Iodine doping was also found to be effective in reducing the counterclockwise hysteresis in the transfer characteristics of CuO TFTs. These results are explained by physicochemical reactions in which iodine replaces oxygen vacancies and oxygen atoms through the formation of iodide anions in CuO.
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22
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Ghazal N, Madkour M, Abdel Nazeer A, Obayya SSA, Mohamed SA. Electrochemical capacitive performance of thermally evaporated Al-doped CuI thin films. RSC Adv 2021; 11:39262-39269. [PMID: 35492487 PMCID: PMC9044428 DOI: 10.1039/d1ra07455e] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/08/2021] [Accepted: 11/21/2021] [Indexed: 11/21/2022] Open
Abstract
Schematic diagram showing the preparation of the bare and Al-doped CuI thin films for supercapacitor applications.
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Affiliation(s)
- Nurhan Ghazal
- Centre for Photonics and Smart Materials, Zewail City of Science and Technology, October Gardens, 6th of October City, Giza, Egypt
| | - Metwally Madkour
- Chemistry Department, Faculty of Science, Kuwait University, P. O. Box 5969, Safat, 13060, Kuwait
| | - Ahmed Abdel Nazeer
- Electrochemistry Laboratory, Physical Chemistry Department, National Research Centre, P.O. 12622, Dokki, Giza, Egypt
| | - S. S. A. Obayya
- Centre for Photonics and Smart Materials, Zewail City of Science and Technology, October Gardens, 6th of October City, Giza, Egypt
| | - Shaimaa A. Mohamed
- Centre for Photonics and Smart Materials, Zewail City of Science and Technology, October Gardens, 6th of October City, Giza, Egypt
- Center for Nanotechnology, Zewail City of Science and Technology, October Gardens, 6th of October, Giza, 12578, Egypt
- Nanotechnology and Nanoelectronics Engineering Program, University of Science and Technology, Zewail City of Science and Technology, October Gardens, 6th of October City, Giza, Egypt
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