Recent Progress on Electrical and Optical Manipulations of Perovskite Photodetectors

UV-Resistant Nanostructured Anti-reflective Film for Achieving Efficiency Enhancement of Perovskite Solar Cells and Potential of Fabricating Large-Scale Cu(In, Ga)Se2 Solar Cells

Sticker-type transparent antireflective film (STAF) is applied to perovskite solar cells (PSCs) to reduce the reflection and improve the light-trapping ability of PSCs. However, the development of STAF is hindered by many factors, such as expensive materials, low actual service life, unsatisfactory antireflective effect, and a lack of research on stability. This work proposes an ultraviolet (UV)-resistant enhanced sticker-type nanostructure acrylic resin antireflective film (SNAAF), which is applied to the incident surface of PSCs. SNAAF is prepared by using a cleverly designed two-step peeling transfer process. The average reflectance of the related device is reduced by 4.06% through the entire visible light spectrum, which also helps achieve the champion performance of the PSCs with STAF. The excellent antireflection performance increases power conversion efficiency (PCE) from 20.77% to 22.1% owing to the significantly enhanced short-circuit current density by 5.5% with the SNAAF. Additionally, the target device maintains nearly 80% of its initial PCE after 480 h of irradiation with UV light (365 nm), far exceeding the exposure levels in IEC 61215. Moreover, the designed SNAAF is applicable to large-area Cu(In, Ga)Se2 (CIGS) solar cells (area: 225 cm2), which develops a practical external engineering strategy for optimizing device performance for different types of commercial solar cells.

Interface engineering for photoelectrochemical oxygen evolution reaction

Photoelectrochemical (PEC) water splitting provides a promising approach for solving sustainable energy challenges and achieving carbon neutrality goals. The oxygen evolution reaction (OER), a key bottleneck in the PEC water-splitting system occurring at the photoanode/electrolyte interface, plays a fundamental role in sustainable solar fuel production. Proper surface or interface engineering strategies have been proven to be necessary to achieve efficient and stable PEC water oxidation. This review summarizes the recent advances in interface engineering, including junction formation, surface doping, surface passivation or protection, surface sensitization, and OER cocatalyst modification, while highlighting the remarkable research achievements in the field of PEC water splitting. The benefits of each interface engineering strategy and how it enhances the device performance are critically analyzed and compared. Finally, the outlook for the development of interface engineering for efficient PEC water splitting is briefly discussed. This review illustrates the importance of employing rational interface engineering in realizing efficient and stable PEC water splitting devices.

MAPbX3 Perovskite Single Crystals for Advanced Optoelectronic Applications: Progress, Challenges, and Perspective

Perovskite single crystals have garnered significant attention due to their impressive properties in optoelectronic applications, including long carrier diffusion lengths, low trap-state densities, and enhanced stability. Methylamino lead halide perovskite (MAPbX3, where X is a halogen such as Cl, Br, or I) is a notable example of a metal halide perovskite with desirable properties and ideal cubic perovskites with a tolerance factor between 0.9 and 1.0. MAPbX3 has adjustable bandgap, high thermal and chemical stability, and excellent light absorption capacity. Here the unique characteristics of MAPbX3, including molecular structure, optical absorption properties, and carrier transport of MAPbX3 single crystals are summarized. Universal growth technologies for MAPbX3 single crystals, including inverse temperature crystallization, anti-solvent evaporation crystallization, solvent evaporation method, and single-crystalline thin film, including epitaxial method and space limiting method, are briefly introduced. Additionally, a comprehensive review of MAPbX3 single crystals in various optoelectronic device applications, including photodetectors, X-ray detectors, light-emitting diodes, lasers, and solar cells is mainly discussed. Finally, the current challenges and future prospects of the large-scale preparation and growth of MAPbX3 single crystals are put forward. With the continuous progress of photoelectric technology, more innovative photoelectric applications in the future are expected to bring more convenience and progress.

A ferroelectrically modulated ultrasensitive two-dimensional perovskite phototransistor with zero-gate-bias

Two-dimensional (2D) organic-inorganic halide perovskites are promising sensitive materials for optoelectronic applications due to their strong light-matter interactions, layered structure, long carrier lifetime and diffusion length. However, a high gate bias is indispensable for perovskite-based phototransistors to optimize detection performances, since ion migration seriously screens the gate electric field and the deposition process introduces intrinsic defects, which induces severe leakages and large power dissipation. In this work, an ultrasensitive phototransistor based on the (PEA)2SnI4 perovskite and the Al:HfO2 ferroelectric layer is meticulously studied, working without an external gate voltage. The nonvolatile remanent polarization provides a stable floating gate to locally define the potential profile, regulate barrier contact, and modulate carrier transport properties and charge redistributions, which facilitates an ultralow level of dark current and accurate photocurrent extraction at zero gate bias. Consequently, the fabricated phototransistor exhibits an outstanding responsivity and detectivity of 4918 A W-1 and 2.15 × 1015 Jones, respectively. The developed phototransistor contributes to advancements in optoelectronic applications including large-scale intelligent sensor arrays, light-wave communications and integrated circuits.

High Performance Perovskite Photodiodes via Molecule-Assisted Interfacial and Bulk Modulations

Metal halide perovskites have attracted significant attention in photodetection due to their superior photophysical properties and improved stability. However, the performance of their photodiodes is predominantly limited by non-radiative recombination within the perovskite layer or at interfaces. Here, molecular engineering via phenylethylammonium chloride for interfacial modulation and methylenediammonium dichloride for bulk modulation is introduced into vertical perovskite photodiodes to boost the photodetection performance. The responsivity at 635 nm excitation increased from 0.09 to 0.33 A W-1 with interfacial modulation, compared to the original perovskite device, and is further improved to 0.40 A W-1 with the combined effects of interfacial and bulk modulations (i.e., synergistic bimolecular engineering). The optimized photodiodes demonstrated high detectivity of over 1011 Jones, a rapid response time of ≈1 µs, and a linear dynamic range of ≈100 dB. Furthermore, the photocurrent exhibited a U-shaped dependence on temperature ranging from 10 to 300 K, with linearity breaking under strong illumination at low temperatures. These results confirmed that molecular engineering is the promising strategy for achieving high-performance perovskite photodetectors.

Wide-Bandgap Lead Halide Perovskites for Next-Generation Optoelectronics: Current Status and Future Prospects

Over the past decade, lead halide perovskites (LHPs), an emerging class of organic-inorganic ionic-type semiconductors, have drawn worldwide attention, which injects vitality into next-generation optoelectronics. Facilely tunable bandgap is one of the fascinating features of LHPs, enabling them to be widely used in various nano/microscale applications. Notably, wide-bandgap (WBG) LHPs have been considered as promising alternatives to traditional WBG semiconductors owing to the merits of low-cost, solution processability, superior optoelectronic characteristics, and flexibility, which could improve the cost-effectiveness and expand the application scenarios of traditional WBG devices. Herein, we provide a comprehensive review on the up-to-date research progress of WBG LHPs and their optoelectronics in terms of material fundamentals, optoelectronic devices, and their practical applications. First, the features and shortcomings of WBG LHPs are introduced to objectively display their natural features. Then we separately depict three typical optoelectronic devices based on WBG LHPs, including solar cells, light emitting diodes, and photodetectors. Sequentially, the inspiring applications of these optoelectronic devices in integrated functional systems are elaborately demonstrated. At last, the remaining challenges and future promise of WBG LHPs in optoelectronic applications are discussed. This review highlights the significance of WGB LHPs for promoting the development of the next-generation optoelectronics industry.

Ion Migration at Metal Halide Perovskite Grain Boundaries Elucidated with a Machine Learning Force Field

Metal halide perovskites are promising optoelectronic materials with excellent defect tolerance in carrier recombination, believed to arise largely from their unique soft lattices. However, weak lattice interactions also promote ion migration, leading to serious stability issues. Grain boundaries (GBs) have been experimentally identified as the primary migration channels, but the relevant mechanism remains elusive. Using molecular dynamics with a machine learning force field, we directly model ion migration at a common CsPbBr3 GB. We demonstrate that the as-built GB model, containing 6400 atoms, experiences structural reconstruction over several nanoseconds, and only Br atoms diffuse after that. A fraction of Br atoms near the GB either migrate toward the GB center or along the GB through different migration channels. Increasing the temperature not only accelerates the ion migration via the Arrhenius activation but also allows more Br atoms to migrate. The activation energies are much lower at the GB than in the bulk due to large-scale structural distortions and favorable non-stoichiometric local environments available at GBs. Making the local GB composition more stoichiometric by doping or annealing can suppress the ion migration. The reported results provide valuable atomistic insights into the GB properties and ion migration in metal halide perovskites.

How the Spacer Influences the Stability of 2D Perovskites?

Two-dimensional lead halide perovskites (2D HPs) represent as an emerging class of materials given their tunable optoelectronic properties and long-term stability in perovskite solar cells. However, the ever-growing field of optoelectronic devices using 2D HPs requires fundamental understanding of the influence of the spacer on the physiochemical properties and stability of perovskites as well as establish which cation properties are closely related to suppress the halogen ion mobility. This study focuses on investigating the influence of organic spacers with intrinsic properties (e.g., rigidity and flexibility, special groups) and variations of material dimensions on the stability of halogen ions and inorganic frameworks in 2D HPs. It is found that the perovskite structure composed of rigidity molecules owns better stability of halogen ion and inorganic framework than that of flexible molecules. The stability of ions exhibits a negative correlation with the dimensions of perovskite. More importantly, a simple descriptor for measuring the stability of halogen ions in 2D HPs is constructed. By causal discovery algorithms with more physical and chemical significance, the Kappa shape index, number of rotatable bonds, and aromatic carbocycles in organic spacers are identified as causal and important features for the stability of halogen ions in 2D HPs.

Recent Progress in Photodetectors: From Materials to Structures and Applications

Photodetectors are critical components in a wide range of applications, from imaging and sensing to communications and environmental monitoring. Recent advancements in material science have led to the development of emerging photodetecting materials, such as perovskites, polymers, novel two-dimensional materials, and quantum dots, which offer unique optoelectronic properties and high tunability. This review presents a comprehensive overview of the synthesis methodologies for these cutting-edge materials, highlighting their potential to enhance photodetection performance. Additionally, we explore the design and fabrication of photodetectors with novel structures and physics, emphasizing devices that achieve high figure-of-merit parameters, such as enhanced sensitivity, fast response times, and broad spectral detection. Finally, we discuss the demonstration of new applications enabled by these advanced photodetectors, including flexible and wearable devices, next-generation imaging systems, and environmental sensing technologies. Through this review, we aim to provide insights into the current trends and future directions in the field of photodetection, guiding further research and development in this rapidly evolving area.

Toward Thin-Film Laser Diodes with Metal Halide Perovskites

Metal halide perovskite semiconductors hold a strong promise for enabling thin-film laser diodes. Perovskites distinguish themselves from other non-epitaxial media primarily through their ability to maintain performance at high current densities, which is a critical requirement for achieving injection lasing. Coming in a wide range of varieties, numerous perovskites delivered low-threshold optical amplified spontaneous emission and optically pumped lasing when combined with a suitable optical cavity. A progression toward electrically pumped lasing requires the development of efficient light-emitting structures with reduced optical losses and high radiative efficiency at lasing-level current densities. This involves a set of important trade-offs in terms of material choice, stack and waveguide design, as well as resonator integration. In this Perspective, the key milestones are highlighted that have been achieved in the study of passive optical waveguides and light-emitting diodes, and these learnings are translated toward more complex laser diode architectures. Finally, a novel resonator integration route is proposed that is capable of relaxing optical and electrical design constraints.

An Active-Matrix Synaptic Phototransistor Array for In-Sensor Spectral Processing

The human retina perceives and preprocesses the spectral information of incident light, enabling fast image recognition and efficient chromatic adaptation. In comparison, it is reluctant to implement parallel spectral preprocessing and temporal information fusion in current complementary metal-oxide-semiconductor (CMOS) image sensors, requiring intricate circuitry, frequent data transmission, and color filters. Herein, an active-matrix synaptic phototransistor array (AMSPA) is developed based on organic/inorganic semiconductor heterostructures. The AMSPA provides wavelength-dependent, bidirectional photoresponses, enabling dynamic imaging and in-sensor spectral preprocessing functions. Specifically, near-infrared light induces inhibitory photoresponse while UV light results in exhibitory photoresponse. With rational structural design of the organic/inorganic hybrid heterostructures, the current dynamic range of phototransistor is improved to over 90 dB. Finally, a 32 × 64 AMSPA (128 pixels per inch) is demonstrated with one-switch-transistor and one-synaptic phototransistor (1-T-1-PT) structure, achieving spatial chromatic enhancement and temporal trajectory imaging. These results reveal the feasibility of AMSPA for constructing artificial vision systems.

Exploring Nanoscale Perovskite Materials for Next-Generation Photodetectors: A Comprehensive Review and Future Directions

The rapid advancement of nanotechnology has sparked much interest in applying nanoscale perovskite materials for photodetection applications. These materials are promising candidates for next-generation photodetectors (PDs) due to their unique optoelectronic properties and flexible synthesis routes. This review explores the approaches used in the development and use of optoelectronic devices made of different nanoscale perovskite architectures, including quantum dots, nanosheets, nanorods, nanowires, and nanocrystals. Through a thorough analysis of recent literature, the review also addresses common issues like the mechanisms underlying the degradation of perovskite PDs and offers perspectives on potential solutions to improve stability and scalability that impede widespread implementation. In addition, it highlights that photodetection encompasses the detection of light fields in dimensions other than light intensity and suggests potential avenues for future research to overcome these obstacles and fully realize the potential of nanoscale perovskite materials in state-of-the-art photodetection systems. This review provides a comprehensive overview of nanoscale perovskite PDs and guides future research efforts towards improved performance and wider applicability, making it a valuable resource for researchers.

2D Printed Plasmonic Nanoparticle Array Incorporated Formamidinium-Based High-Performance Self-Biased Perovskite Photodetector

Utilizing noble metal nanoparticles through novel technologies is a promising avenue for enhancing the performance of organic/inorganic photodetectors. This study investigates the performance enhancement of Formamidinium-based perovskite (Pe) photodetectors (PDs) through the incorporation of plasmonic silver nanoparticles (Ag NPs) arrays using a 2D printing technique. The incorporation of plasmonic Ag NPs leads to a major improvement in the performance of the planar PD device, which is attributed to increased light absorption, hot electron generation, and more efficient charge extraction and transport. The unique aspect of this study lies in the method of incorporating plasmonic NPs using a two-dimensional printing technology. This approach offers several advantages over traditional methods, including lower cost, nonvacuum operation, and compatibility with room temperature fabrication. The printed plasmon-enhanced optimized perovskite PD exhibits remarkable performance metrics, including a peak responsivity of 1.03 A/W at 5 V external bias, which is significantly high compared to the reported devices. Moreover, the PD demonstrates exceptional detectivity with a peak value of 3.7 × 1012 Jones at 5 V, highlighting its capability to detect ultralow light signals with high precision. The device can be reversibly switched between low and high conductance states, yielding a stable and repeatable Ilight/Idark ratio of 1.06 × 104. In addition, the integration of plasmonic nanoparticles imparts remarkable photovoltaic characteristics to the perovskite photodetector, enabling it to function as a self-biased device. The hybrid device demonstrates a peak responsivity of 15 mA/W, a high detectivity of 2.15 × 1011 Jones, and a significant on-off ratio of 2.23 × 103, all achieved at zero external bias. Overall, this study presents a significant advancement in the field of plasmon-enhanced Pe photodetection technology. By utilizing the benefits of printing technology to incorporate NPs, we have developed a high-performance PD that combines cost-effectiveness with exceptional performance. Thus, we believe that this study will pave the way for the development of a low-cost, high-performance plasmon-enhanced Pe-based PD.

Enhancing the Humidity Stability of Perovskite Films through Interfacial Modification with Differentiated Hydrophilic Organics

Preparing high-quality perovskite films is a decisive step toward realizing highly efficient and stable perovskite solar cells (Pero-SCs). Water is a key factor affecting the stability of the Pero-SCs. Here, the widely used water adsorbents chitosan, sorbitol, and sodium hyaluronate (NaHA) were used as hydrophilic layers on the upper interface of the perovskite to form a barrier against water. The water adsorbents also passivated defects on the surface of the perovskite active layer due to their -OH and -COOH functional groups. The NaHA-modified devices showed the best power conversion efficiency (PCE) (PCE = 21.74%). Although the NaHA-modified Pero-SCs showed optimal photovoltaic performance, the stability of the modified devices decreased due to the strong water adsorption ability of NaHA, while with moderate water adsorption ability sorbitol-modified devices exhibited good stability and PCE. The devices were tested in the dark and room temperature at different humidity levels for 800 h. At low humidity (25% ± 5% RH), the PCEs of the sorbitol- and NaHA-modified devices were maintained at 80% and 71% of the initial values, respectively. At high humidity (75% ± 5% RH), the PCE was maintained at 64% and 23% of the initial values, respectively. This work provides an avenue to select adsorbents with suitable water absorption ability as the interface modification layer, thus reducing the water erosion of perovskite films and obtaining highly stable inverted Pero-SCs.

Enhanced Optoelectronic Performance of p-WSe2/Re0.12W0.42Mo0.46S2 Heterojunction

Stacking of van der Waals (vdW) heterostructures and chemical element doping have emerged as crucial methods for enhancing the performance of semiconductors. This study proposes a novel strategy for modifying heterostructures by codoping MoS2 with two elements, Re and W, resulting in the construction of a RexWyMo1-x-yS2/WSe2 heterostructure for the preparation of photodetectors. This approach incorporates multiple strategies to enhance the performance, including hybrid stacking of materials, type-II band alignment, and regulation of element doping. As a result, the RexWyMo1-x-yS2/WSe2 devices demonstrate exceptional performance, including high photoresponsivity (1550.22 A/W), high detectivity (8.17 × 1013 Jones), and fast response speed (rise/fall time, 190 ms/1.42 s). Moreover, the ability to tune the band gap through element doping enables spectral response in the ultraviolet (UV), visible light, and near-infrared (NIR) regions. This heterostructure fabrication scheme highlights the high sensitivity and potential applications of vdW heterostructure (vdWH) in optoelectronic devices.

Solid-State Anion Exchange Enabled by Pluggable vdW Assembly for In Situ Halide Manipulation in Perovskite Monocrystalline Film

The fabrication of perovskite single crystal-based optoelectronics with improved performance is largely hindered by limited processing techniques. Particularly, the local halide composition manipulation, which dominates the bandgap and thus the formation of heterostructures and emission of multiple-wavelength light, is realized via prevalent liquid- or gas-phase anion exchange with the utilization of lithography, while the monocrystalline nature is sacrificed due to polycrystalline transition in exchange with massive defects emerging, impeding carrier separation and transportation. Thus, a damage-free and lithography-free solid-state anion exchange strategy, aiming at in situ halide manipulation in perovskite monocrystalline film, is developed. Typically, CsPbCl3 working as medium to deliver halide is van der Waals (vdW) assembled to specific spots of CsPbBr3, followed by the removal of CsPbCl3 after anion exchange, with the halide composition in contact area modulated and monocrystalline nature of CsPbBr3 preserved. CsPbBr3-CsPbBrxCl3-x monocrystalline heterostructure has been achieved without lithography. Device based on the heterostructure shows apparent rectification behavior and improved photo-response rate. Heterostructure arrays can also be constructed with customized medium crystal. Furthermore, the halide composition can be accurately tuned to enable full coverage of visible spectra. The solid-state exchange enriches the toolbox for processing vulnerable perovskite and paves the way for the integration of monocrystalline perovskite optoelectronics.

Synthesis of Double Trivalent Perovskite Quantum Dots Cs3BiSbX9 (X = Cl, Br, I) for Efficient CO2 Photoreduction Performance

Non-toxic Bi halides have great potential in the field of CO2 photoreduction, but strong charge localization limits their charge separation and transfer. In this study, a series of Cs3BiSbX9 (X = Cl, Br, I) perovskite quantum dots (PQDs) are synthesized by antisolvent recrystallization at room temperature, in which Cs3BiSbBr9 PQDs has high selectivity (94.51%) and yield (15.32 µmol g-1 h-1) of CO2 to CO. In situ DRIFTS and theoretical calculations suggest that the surface charge can be tailored by halogen modulation, allowing for the customization of intermediate species. The Bi─Br─Sb symmetric charge distribution induced by the halogen Br promotes the formation of b─HCOO and reduces the reaction energy barrier of the rate-limiting step, while the weak electronegativity of Cl and the high electronegativity of I leads to m─HCOO and ─COOH production, which are detrimental to CO generation. This work provides new insights into the design of halide alloy perovskites for CO2 photoreduction.

van der Waals Integration of Large-Area Monocrystalline 3D Perovskite Thin Films on Arbitrary Semiconductor Substrates for Heterojunctions

Perovskite monocrystalline films are regarded as desirable candidates for the integration of high-performance optoelectronics due to their unique photophysical properties. However, the heterogeneous integration of a perovskite monocrystalline film with other semiconductors is fundamentally limited by the lattice mismatch, which hinders direct epitaxy. Herein, the van der Waals (vdW) integration strategy for 3D perovskites is developed, where perovskite monocrystalline films are epitaxially grown on the mother substrate, followed by its peeling off and transferring to arbitrary semiconductors, forming monocrystalline heterojunctions. The as-achieved CsPbBr3-Nb-doped SrTiO3 (Nb:STO) vdW p-n heterojunction exhibited comparable performance to their directly epitaxial counterpart, demonstrating the feasibility of vdW integration for 3D perovskites. Furthermore, the vdW integration could be extended to silicon substrates, rendering the CsPbBr3-n-Si and CsPbCl3-p-Si p-n heterojunction with apparent rectification behaviors and photoresponse. The vdW integration significantly enriches the selections of semiconductors hybridizing with perovskites and provides opportunities for monocrystalline perovskite optoelectronics with complex configurations and multiple functionalities.

Broadband mid-infrared photodetectors utilizing two-dimensional van der Waals heterostructures with parallel-stacked pn junctions

Optimizing the width of depletion region is a key consideration in designing high performance photovoltaic photodetectors, as the electron-hole pairs generated outside the depletion region cannot be effectively separated, leading to a negligible contribution to the overall photocurrent. However, currently reported photovoltaic mid-infrared photodetectors based on two-dimensional heterostructures usually adopt a single pn junction configuration, where the depletion region width is not maximally optimized. Here, we demonstrate the construction of a high performance broadband mid-infrared photodetector based on a MoS2/b-AsP/MoS2npn van der Waals heterostructure. The npn heterojunction can be equivalently represented as two parallel-stacked pn junctions, effectively increasing the thickness of the depletion region. Consequently, the npn device shows a high detectivity of 1.3 × 1010cmHz1/2W-1at the mid-infrared wavelength, which is significantly improved compared with its single pn junction counterpart. Moreover, it exhibits a fast response speed of 12 μs, and a broadband detection capability ranging from visible to mid-infrared wavelengths.

Enhancing Optical and Thermal Stability of Blue-Emitting Perovskite Nanocrystals through Surface Passivation with Sulfonate or Sulfonic Acid Ligands

This study aims to enhance the optical and thermal properties of cesium-based perovskite nanocrystals (NCs) through surface passivation with organic sulfonate (or sulfonic acid) ligands. Four different phenylated ligands, including sodium β-styrenesulfonate (SbSS), sodium benzenesulfonate (SBS), sodium p-toluenesulfonate (SPTS), and 4-dodecylbenzenesulfonic acid (DBSA), were employed to modify blue-emitting CsPbBr1.5Cl1.5 perovskite NCs, resulting in improved size uniformity and surface functionalization. Transmission electron microscopy and X-ray photoelectron spectroscopy confirmed the successful anchoring of sulfonate or sulfonic acid ligands on the surface of perovskite NCs. Moreover, the photoluminescence quantum yield increased from 32% of the original perovskite NCs to 63% of the SPTS-modified ones due to effective surface passivation. Time-resolved photoluminescence decay measurements revealed extended PL lifetimes for ligand-modified NCs, indicative of reduced nonradiative recombination. Thermal stability studies demonstrated that the SPTS-modified NCs retained nearly 80% of the initial PL intensity when heated at 60 °C for 10 min, surpassing the performance of the original NCs. These findings emphasize the optical and thermal stability enhancement of cesium-based perovskite NCs through surface passivation with suitable sulfonate ligands.

Highly Efficient Flexible Photodetectors Based on Pb-Free CsBi3I10 Perovskites

Perovskites have made remarkable advancements in optoelectronics owing to their high light absorption coefficient, tunable bandgap, and long charge diffusion. Nonetheless, the practical applications of Pb-based perovskites have been hindered by the instability and toxicity of Pb, especially in flexible electronics, which require high biosecurity and low toxicity. Hence, the development of stable Pb-free perovskite materials has gained increasing attention. In this study, we synthesized stable CsBi3I10 Pb-free perovskites outside the glovebox and improved the optoelectronic and mechanical performances of the CsBi3I10-based flexible devices through polyvinylcarbazole (PVK) doping. Flexible photodetectors with the device structure of PET/ITO/PEDOT:PSS/CsBi3I10:PVK/Au was fabricated. The results indicated that the introduction of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) reduced the surface roughness of the flexible PET substrate, while PVK doping further improved the surface smoothness of CsBi3I10 thin films, thereby enhancing the interfacial charge transportation. Moreover, PEDOT:PSS and PVK acted as stepwise hole transport layers in the photodetectors. The device demonstrated a maximum responsivity of 0.3 A/W, detectivity of 2.6 × 1011 Jones, and a response time of 102 μs at 650 nm. After subjecting it to 1000 bending tests, the light current retained 80% of its initial value. This study presents a universally applicable method for controlling the surface morphology of a flexible perovskite thin film.

Piperidine and Pyridine Series Lead-Free Dion-Jacobson Phase Tin Perovskite Single Crystals and Their Applications for Field-Effect Transistors

Two-dimensional (2D) organic-inorganic metal halide perovskites have gained immense attention as alternatives to three-dimensional (3D) perovskites in recent years. The hydrophobic spacers in the layered structure of 2D perovskites make them more moisture-resistant than 3D perovskites. Moreover, they exhibit unique anisotropic electrical transport properties due to a structural confinement effect. In this study, four lead-free Dion-Jacobson (DJ) Sn-based phase perovskite single crystals, 3AMPSnI4, 4AMPSnI4, 3AMPYSnI4, and 4AMPYSnI4 [AMP = (aminomethyl)-piperidinium, AMPY = (aminomethyl)pyridinium] are reported. Results reveal structural differences between them impacting the resulting optical properties. Namely, higher octahedron distortion results in a higher absorption edge. Density functional theory (DFT) is also performed to determine the trends in energy band diagrams, exciton binding energies, and formation energies due to structural differences among the four single crystals. Finally, a field-effect transistor (FET) based on 4AMPSnI4 is demonstrated with a respectable hole mobility of 0.57 cm2 V-1 s-1 requiring a low threshold voltage of only -2.5 V at a drain voltage of -40 V. To the best of our knowledge, this is the third DJ-phase perovskite FET reported to date.

Ferroelectricity and Thermochromism in a 2D Dion-Jacobson Organic-Inorganic Hybrid Perovskite

2D organic-inorganic hybrid perovskites (OIHPs) have become one of the hottest research topics due to their excellent environmental stability and unique optoelectronic properties. Recently, the ferroelectricity and thermochromism of 2D OIHPs have attracted increasing interests. Integrating ferroelectricity and thermochromism into perovskites can significantly promote the development of multichannel intelligent devices. Here, a novel 2D Dion-Jacobson OIHP of the formula (3AMP)PbI4 (where 3AMP is 3-(aminomethyl)pyridinium) is reported, which has a remarkable spontaneous polarization value (Ps) of 15.6 µC cm-2 and interesting thermochromism. As far it is known, such a large Ps value is the highest for 2D OIHPs recorded so far. These findings will inspire further exploration and application of multifunctional perovskites.

A Double Perovskite Single Crystal CsCuAgI3

Eco-friendly halide double perovskites are attracting significant attention as potential substitutes for traditional lead-based halide perovskites. However, their typically wide or indirect band gap limits further technological advancement. This study presents a new, eco-friendly, all-inorganic millimeter-scale CsCuAgI3 single crystal (SC). The crystal exhibits a direct band gap of 2.02 eV at the G-point, markedly superior to that of traditional double perovskites. The absorption and photoluminescence spectra further corroborate its band gap attributes. Owing to the B-site Cu-Ag disorder, the crystal possesses a higher Urbach energy (119 meV), indicative of structural disorder. CsCuAgI3 exhibits a wide Stokes shift of 230 nm, a wide full width at half-maximum (fwhm) of 152 nm, a long fluorescence lifetime of 7.29 μs, and excellent stability. In addition, a photoelectric detection prototype was prepared using a CsCuAgI3 single crystal. Using a 375 nm laser as the excitation source, the device showed a very sensitive photoelectric response, clocking in at (0.37/0.21) seconds. This work offers new insights into developing novel lead-free double perovskite single crystals and exploring their potential applications.

Tuneable Efficient White Emission of Sb3+/Mn2+ Co-Doped Lead-Free Perovskites for Single-Component White Light-Emitting Diodes

Inorganic lead-free perovskite nanocrystals (NCs) with broadband self-trapped exciton (STEs) emission and low toxicity have shown enormous application prospects in the field of display and lighting. However, white light-emitting diodes (WLEDs) based on a single-component material with high photoluminescence quantum yield (PLQY) remain challenging. Here, we demonstrate a novel codoping strategy by introducing Sb3+/Mn2+ ions to achieve the tuneable dual emission in lead-free perovskite Cs3InCl6 NCs. The PLQY increases to 59.64% after doping with Sb3+. The codoped Cs3InCl6 NCs exhibit efficient white light emission due to the energy transfer channel from STEs to Mn2+ ions with PLQY of 51.38%. Density functional theory (DFT) calculations have been used to verify deeply the effects of Sb3+/Mn2+ doping. WLEDs based on Sb3+/Mn2+-codoped Cs3InCl6 NCs are explored with color rendering index of 85.5 and color coordinate of (0.398, 0.445), which have been successfully applied as photodetector lighting sources. This work provides a new perspective for designing novel lead-free perovskites to achieve single-component WLEDs.

Ferroelectric-Optoelectronic Hybrid System for Photodetection

Photodetectors (PDs), as functional devices based on photon-to-electron conversion, are an indispensable component for the next-generation Internet of Things system. The research of advanced and efficient PDs that meet the diverse demands is becoming a major task. Ferroelectric materials can develop a unique spontaneous polarization due to the symmetry-breaking of the unit cell, which is switchable under an external electric field. Ferroelectric polarization field has the intrinsic characteristics of non-volatilization and rewritability. Introducing ferroelectrics to effectively manipulate the band bending and carrier transport can be non-destructive and controllable in the ferroelectric-optoelectronic hybrid systems. Hence, ferroelectric integration offers a promising strategy for high-performance photoelectric detection. This paper reviews the fundamentals of optoelectronic and ferroelectric materials, and their interactions in hybrid photodetection systems. The first section introduces the characteristics and applications of typical optoelectronic and ferroelectric materials. Then, the interplay mechanisms, modulation effects, and typical device structures of ferroelectric-optoelectronic hybrid systems are discussed. Finally, in summary and perspective section, the progress of ferroelectrics integrated PDs is summed up and the challenges of ferroelectrics in the field of optoelectronics are considered.

2D Ruddlesden-Popper Sn-Based Perovskite Weak Light Detector for Image Transmission and Reflection Imaging

2D Ruddlesden-Popper Sn-based perovskite has excellent optoelectronic properties and weak halide ion migration characteristics, making it an ideal candidate for weak light detection, which has great potential in light communication, and medical applications. Although Sn-based perovskite photodetectors are developed, weak light detection is not demonstrated yet. Herein, a high-performance self-powered photodetector with the capability to detect ultra-weak light signals is designed based on vertical PEA2 SnI4 /Si nanowires heterojunction. Due to the low dark current and high light absorption efficiency, the devices present a remarkable responsivity of 42.4 mA W-1 , a high detectivity of 8 × 1011 Jones, and an ultralow noise current of 2.47 × 10-13 A Hz-1/2 . Especially, the device exhibits a high on-off current ratio of 18.6 at light signals as low as 4.60 nW cm-2 , revealing the capacity to detect ultra-weak light. The device is applied as a signal receiver and realized image transmission in light communication system. Moreover, high-resolution reflection imaging and multispectral imaging are obtained using the device as the sensor in the imaging system. These results reveal that 2D PEA2 SnI4 -based self-powered photodetectors with low-noise current possess enormous potential in future weak light detection.

Recent advances in 2D transition metal dichalcogenide-based photodetectors: a review

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as a highly promising platform for the development of photodetectors (PDs) owing to their remarkable electronic and optoelectronic properties. Highly effective PDs can be obtained by making use of the exceptional properties of 2D materials, such as their high transparency, large charge carrier mobility, and tunable electronic structure. The photodetection mechanism in 2D TMD-based PDs is thoroughly discussed in this article, with special attention paid to the key characteristics that set them apart from PDs based on other integrated materials. This review examines how single TMDs, TMD-TMD heterostructures, TMD-graphene (Gr) hybrids, TMD-MXene composites, TMD-perovskite heterostructures, and TMD-quantum dot (QD) configurations show advanced photodetection. Additionally, a thorough analysis of the recent developments in 2D TMD-based PDs, highlighting their exceptional performance capabilities, including ultrafast photo response, ultrabroad detectivity, and ultrahigh photoresponsivity, attained through cutting-edge methods is provided. The article conclusion highlights the potential for ground-breaking discoveries in this fast developing field of research by outlining the challenges faced in the field of PDs today and providing an outlook on the prospects of 2D TMD-based PDs in the future.

Tunable Periodic Nanopillar Array for MAPbI3 Perovskite Photodetectors with Improved Light Absorption

In the field of optoelectronic applications, the vigorous development of organic-inorganic hybrid perovskite materials, such as methylammonium lead triiodide (MAPbI3), has spurred continuous research on methods to enhance the photodetection performance. Periodic nanoarrays can effectively improve the light absorption of perovskite thin films. However, there are still challenges in fabricating tunable periodic patterned and large-area perovskite nanoarrays. In this study, we present a cost-effective and facile approach utilizing nanosphere lithography and dry etching techniques to create a large-area Si nanopillar array, which is employed for patterning MAPbI3 thin films. The scanning electron microscopy (SEM) and X-ray diffraction (XRD) results reveal that the introduction of nanopillar structures did not have a significant adverse effect on the crystallinity of the MAPbI3 thin film. Light absorption tests and optical simulations indicate that the nanopillar array enhances the light intensity within the perovskite films, leading to photodetectors with a responsivity of 11.2 A/W and a detectivity of 7.3 × 1010 Jones at 450 nm in wavelength. Compared with photodetectors without nanostructures, these photodetectors exhibit better visible light absorption. Finally, we demonstrate the application of these photodetector arrays in a prototype image sensor.

In-situ free-standing inorganic 2D Cs2PbI2Cl2 nanosheets for efficient self-powered photodetectors with carbon electrode

Inorganic two-dimensional (2D) perovskites possess excellent thermal stability and high charge mobility, making them an attractive choice for stable optoelectronic devices such as photodetectors (PDs). The formation of an appropriate inorganic 2D perovskite structure is of great importance to efficient PDs, especially to that of planar self-powered photovoltaic PDs featuring perpendicular charge transport channels. Herein, we implemented morphological engineering on wide bandgap inorganic 2D perovskite, Cs2PbI2Cl2, demonstrating a successful preparation of in-situ free-standing nanosheets structure with proper charge channels for photovoltaic type self-powered PDs. Compared with its counterpart with a nanoblock morphology, the 2D nanosheet Cs2PbI2Cl2 film exhibits enhanced charge mobility and purified Ruddlesden-Popper phase that can withstand high-energy electron beam radiation, accelerated thermal aging and long-term shelf storage. Sandwiching Cs2PbI2Cl2 nanosheet film in between tin oxide (SnO2) and polythiophene (P3HT) as electron and hole acceptors, respectively, the constructed photovoltaic type structure exhibits effective dissociation of excitons at the cascade type-II interface. The nanosheets enable lower dark current and more efficient charge collection than the nanoblock structure. As a result, the self-powered photodetectors with 2D Cs2PbI2Cl2 nanosheets deliver an outstanding responsivity of 698 mW/cm2 and a detectivity of 8.6×1012 Jones. The stable PDs can be applied to monitor ultraviolet irradiation in real outdoor conditions. Our work demonstrates the significant role of morphology tuning of 2D inorganic perovskite in stable, cost-effective and efficient photodetectors.

Waterproof and Flexible Perovskite Photodetector Enabled By P-type Organic Molecular Rubrene with High Moisture and Mechanical Stability

Metal halide perovskite films have gained significant attention because of their remarkable optoelectronic performances. However, their poor stability upon the severe environment appears to be one of the main facets that impedes their further commercial applications. Herein, a method to improve the stability of flexible photodetectors under water and humidity environment without encapsulation is reported. The devices are fabricated using the physical vapor deposition method (Pulse Laser Deposition & Thermal Evaporation) under high-vacuum conditions. An amorphous organic Rubrene film with low molecular polarity and high elastic modulus serves as both a protective layer and hole transport layer. After immersed in water for 6000 min, the photoluminescence intensity attenuation of films only decreased by a maximum of 10%. The demonstrator device, based on Rubrene/CsPbBr3 /ZnO heterojunction confirms that the strategy not only enhances device moisture and mechanical stability but also achieves high sensitivity in optoelectronic detection. In self-powered mode, it has a fast response time of 79.4 µs /207.6 µs and a responsivity 124 mA W-1 . Additionally, the absence of encapsulation simplifies the fabrication of complex electrodes, making it suitable for various applications. This study highlights the potential use of amorphous organic films in improving the stability of perovskite-based flexible devices.

Integrating Hybrid Perovskite Nanocrystals into Metal-Organic Framework as Efficient S-Scheme Heterojunction Photocatalyst for Synergistically Boosting Controlled Radical Photopolymerization under 980 nm NIR Light

S-scheme heterojunction photocatalyst MAPbI3@PCN-222 with light absorption extending to the NIR region is constructed by embedding organic-inorganic hybrid perovskite (MAPbI3) into porphyrinic Zr-MOF (PCN-222). Both in situ X-ray photoelectron spectroscopy, ultraviolet photoelectron spectral characterization, and photocatalytic polymerization experiment prove the formation of S-scheme heterojunction. MAPbI3@PCN-222 with a low dosage (90 ppm) displays an impressive photocatalytic ability for 980 nm light-mediated photoinduced electron/energy-transfer-reversible addition-fragmentation chain-transfer (PET-RAFT) polymerization in air. The well-defined controllable-molecular weight polymers including block copolymers and ultrahigh-molecular weight polymers can be achieved with narrow distributions (Mw/Mn < 1.20) via rapid photopolymerization. The industrial application potential of the photocatalyst also has been proved by scale-up synthesis of polymers with low polydispersity under NIR light-induced photopolymerization in a large-volume reaction system (200 mL) with high monomer conversion up to 99%. The penetration photopolymerization through the 5 mm polytetrafluoroethylene plate and excellent photocontrollable behavior illustrate the existence of long-term photogenerated electron transfer of heterojunction and abundant free radicals in photopolymerization. The photocatalyst still retains high catalytic activity after 10 cycles of photopolymerization in air. It is revealed for the first time that the special PET-RAFT polymerization pathway is initiated by the aldehyde-bearing α-aminoalkyl radical derived from the oxidization of triethanolamine (TEOA) by the heterojunction photocatalyst. This research offers a new insight into understanding the NIR-light-activated PET-RAFT polymerization mechanism in the presence of TEOA.

Polarization-Sensitive Detector Based on MoTe2/WTe2 Heterojunction for Broadband Optoelectronic Imaging

Polarization-sensitive detectors have significant applications in modern communication and information processing. In this study. We present a polarization-sensitive detector based on a MoTe2/WTe2 heterojunction, where WTe2 forms a favorable bandgap structure with MoTe2 after forming the heterojunction. This enhances the carrier separation efficiency and photoelectric response. We successfully achieved wide spectral detection ranging from visible to near-infrared light. Specifically, under zero bias, our photodetector exhibits a responsivity (R) of 0.6 A/W and a detectivity (D*) of 3.6 × 1013 Jones for 635 nm laser illumination. Moreover, the photoswitching ratio can approach approximately 6.3 × 105. Importantly, the polarization sensitivity can reach 3.5 (5.2) at 635 (1310) nm polarized light at zero bias. This study both unveils potential for utilizing MoTe2/WTe2 heterojunctions as polarization-sensitive detectors and provides novel insights for developing high-performance optoelectronic devices.

Perovskite single-pixel detector for dual-color metasurface imaging recognition in complex environment

Highly efficient multi-dimensional data storage and extraction are two primary ends for the design and fabrication of emerging optical materials. Although metasurfaces show great potential in information storage due to their modulation for different degrees of freedom of light, a compact and efficient detector for relevant multi-dimensional data retrieval is still a challenge, especially in complex environments. Here, we demonstrate a multi-dimensional image storage and retrieval process by using a dual-color metasurface and a double-layer integrated perovskite single-pixel detector (DIP-SPD). Benefitting from the photoelectric response characteristics of the FAPbBr2.4I0.6 and FAPbI3 films and their stacked structure, our filter-free DIP-SPD can accurately reconstruct different colorful images stored in a metasurface within a single-round measurement, even in complex environments with scattering media or strong background noise. Our work not only provides a compact, filter-free, and noise-robust detector for colorful image extraction in a metasurface, but also paves the way for color imaging application of perovskite-like bandgap tunable materials.

Field-Induced Transport Anisotropy in Single-Crystalline All-Inorganic Lead-Halide Perovskite Nanowires

The dynamic crystal lattice of halide perovskites facilitates the coupled transport of ions and electrons, offering innovative concepts in semiconductor iontronic devices that surpass solar cell applications. However, a comprehensive understanding of the intricacies of coupled ionic and electronic transport at the microscale remains ambiguous, owing to the inhomogeneity in ploy-crystalline perovskite thin films. In this work, we employed one-dimensional (1D) single-crystalline CsPbBr3 nanowires (NWs) to investigate the electric field induced ionic transport. Upon poling by an external bias, the previously uniform NW exhibits highly anisotropic ionic transport, which is identified as the origin of the giant switchable photovoltaic effect by spatially resolved scanning photocurrent microscopy. The subsequent ultrafast scanning photoluminescence (PL) microscopy measurements demonstrate significant localization of photocarriers near one terminal of the device, which is attributed to the accumulation of halogen vacancies. In addition, thanks to the enhancement of the local electric field, the poled device shows a 10-fold increase of photoresponse speed. Our findings favor the scale-down of perovskite devices to the submicrometer scale, extending their applications in self-powered iontronic and optoelectronic devices.

3D-Heterojunction Based on Embedded Perovskite Micro-Sized Single Crystals for Fast Photomultiplier Photodetectors with Broad/Narrowband Dual-Mode

A fast photomultiplier photodetector with a broad/narrowband dual mode is implemented using a new 3D heterostructure based on embedded perovskite micro-sized single crystals. Because the single-crystal size is smaller than the electrode size, the active layer can be divided into a perovskite microcrystalline part for charge transport and a polymer-embedded part for charge storage. This induces an additional radial interface in the 3D heterojunction structure, and allows a photogenerated built-in electric field in the radial direction, especially when the energy levels between the perovskite and embedding polymer are similar. This type of heterojunction has a small radial capacitance that can effectively reduce carrier quenching and accelerate the carrier response. By controlling the applied bias direction, up to 300-1000% external quantum efficiency (EQE) and microsecond response can be achieved not only in the wide range of ultraviolet to visible light from 320 to 550 nm, but also in the narrow-band response with a full width at half minimum (FWHM) of 20 nm. This shows great potential for applications in integrated multifunctional photodetectors.

Facile Vertical Structure Broadband Photodetectors Enabled by Polyvinylpyrrolidone-Regulated Perovskite and Near-Infrared-Sensitive Lead Phthalocyanine

Broadband photodetectors have drawn tremendous attention in many application areas such as imaging, optical communication, and biochemical sensing. Perovskite is a star material with broad spectral absorption, but it is challenging to develop ultraviolet-visible-near-infrared (UV-Vis-NIR) ultra-broadband photodetectors due to the insufficient absorption in the near-infrared region. Moreover, it is difficult to construct a diode-type photodetector with a simple vertical structure based only on perovskite materials. Here, facile vertical structure broadband photodetectors were fabricated based on heterojunctions that were composed of perovskite MAPbI3 films with UV-Vis absorption spectrum and small organic molecule lead phthalocyanine (PbPc) with strong NIR optical absorption, resulting in UV-Vis-NIR ultra-broadband photodetection. The quality of MAPbI3 films was improved by introducing polyvinylpyrrolidone (PVP) modification, and subsequently, the corresponding MAPbI3/PbPc heterojunction-based photodetectors exhibited rectification characteristics and reduced reverse dark currents. When the PVP mass ratio is 1 wt%, the photodetector achieved the best performance that the spectral response uniformity factor was as high as 0.77, the photoresponsivity exceeded 10 A/W, and the photoresponse time was less than 0.5 ms under a light intensity of 0.013 mW/cm2 in the UV-Vis to NIR spectral range. These results are comparable or superior to those of some inorganic, organic, and perovskite photodetectors reported previously. This study would provide an effective strategy to construct high-performance perovskite photodetectors based on a simple vertical structure, paving the way to the realization of UV-Vis-NIR broadband photodetection.

Engineering graphitic carbon nitride for next-generation photodetectors: a mini review

Semiconductor photodetectors, as photoelectric devices using optical-electrical signal conversion for detection, are widely used in various fields such as optical communication, medical imaging, environmental monitoring, military tracking, remote sensing, etc. Compared to the conventional photodetector materials including silicon, III-V semiconductors and metal sulfides, graphitic carbon nitride (g-C3N4) as a metal-free polymeric semiconductor, has many advantages such as low-price, easy preparation, efficient visible light response, and relatively good thermal stability. In the meantime, the polymer characteristics also endow the g-C3N4 with good mechanical properties. Apart from being used for photo(electro)catalysts during the past decades, the potential use of g-C3N4 in photodetectors has attracted great research interests very recently. In this review, we first briefly introduce the structure and properties of g-C3N4 and the key performance parameters of photodetectors. Then, combining the very recent progress, the review focuses on the active materials, fabrication methods and performance enhancement strategies for g-C3N4 based photodetectors. The existing challenges are discussed and the future development of g-C3N4 based photodetectors is also forecasted.

Multifunctional Perovskite Photodetectors: From Molecular-Scale Crystal Structure Design to Micro/Nano-scale Morphology Manipulation

Multifunctional photodetectors boost the development of traditional optical communication technology and emerging artificial intelligence fields, such as robotics and autonomous driving. However, the current implementation of multifunctional detectors is based on the physical combination of optical lenses, gratings, and multiple photodetectors, the large size and its complex structure hinder the miniaturization, lightweight, and integration of devices. In contrast, perovskite materials have achieved remarkable progress in the field of multifunctional photodetectors due to their diverse crystal structures, simple morphology manipulation, and excellent optoelectronic properties. In this review, we first overview the crystal structures and morphology manipulation techniques of perovskite materials and then summarize the working mechanism and performance parameters of multifunctional photodetectors. Furthermore, the fabrication strategies of multifunctional perovskite photodetectors and their advancements are highlighted, including polarized light detection, spectral detection, angle-sensing detection, and self-powered detection. Finally, the existing problems of multifunctional detectors and the perspectives of their future development are presented.

Surface Modification of ZnO Nanocrystals with Conjugated Polyelectrolytes Carrying Different Counterions for Inverted Perovskite Light-Emitting Diodes

In this work, bromide ions (Br^-) on the conjugated polyelectrolytes (CPEs) were converted to tetrafluoroborate (BF₄^-) or hexafluorophosphate (PF₆^-) ions through anion exchange. The three CPEs (PFN-Br, PFN-BF₄, and PFN-PF₆) were utilized solely for surface modification of zinc oxide nanocrystals (ZnO NCs). The ionic groups on CPEs can form permanent dipoles to facilitate charge injection from ZnO NCs to cesium lead bromide (CsPbBr₃) NC emitters, therefore promoting luminescent properties of inverted perovskite light-emitting diodes (PeLEDs). The experimental results reveal that ZnO NC films were smoothened by CPEs that allowed flat deposition of the perovskite active layers; moreover, the improved contact between ZnO and perovskite layers was beneficial for reducing leakage current, as verified in the dark current measurement of devices. In addition, the incorporation of CPEs helped to passivate the defects of ZnO NC films and prolong the carrier lifetime of CsPbBr₃ NCs. PeLEDs based on different CPEs were then constructed and evaluated. The device based on PFN-Br showed the highest brightness and current efficiency, and the one based on PFN-BF₄ exhibited better current efficiency over PFN-Br under the low current density below 160 mA/cm². This is the first report using fluorene-based CPEs with Br^-, BF₄^-, or PF₆^- groups to modify the properties of ZnO and CsPbBr₃ NCs for the construction of inverted PeLEDs so far. Our experiments explored new kinds of CPEs on the surface modification of ZnO NCs and device performance of PeLEDs.

Mixed-Cation Halide Perovskite Doped with Rb+ for Highly Efficient Photodetector

Photodetectors are widely employed as fundamental devices in optical communication, automatic control, image sensors, night vision, missile guidance, and many other industrial or military fields. Mixed-cation perovskites have emerged as promising optoelectronic materials for application in photodetectors due to their superior compositional flexibility and photovoltaic performance. However, their application involves obstacles such as phase segregation and poor-quality crystallization, which introduce defects in perovskite films and adversely affect devices' optoelectronic performance. The application prospects of mixed-cation perovskite technology are significantly constrained by these challenges. Therefore, it is necessary to investigate strategies that combine crystallinity control and defect passivation to obtain high-quality thin films. In this study, we incorporated different Rb⁺ ratios in triple-cation (CsMAFA) perovskite precursor solutions and studied their effects on crystal growth. Our results show that a small amount of Rb⁺ was enough to induce the crystallization of the α-FAPbI₃ phase and suppress the formation of the yellow non-photoactive phase; the grain size increased, and the product of the carrier mobility and the lifetime (μτ) improved. As a result, the fabricated photodetector exhibited a broad photo-response region, from ultraviolet to near-infrared, with maximum responsivity (R) up to 11.8 mA W^-1 and excellent detectivity (D*) values up to 5.33 × 10¹¹ Jones. This work provides a feasible strategy to improve photodetectors' performance via additive engineering.

Infrared Photodetection from 2D/3D van der Waals Heterostructures

An infrared photodetector is a critical component that detects, identifies, and tracks complex targets in a detection system. Infrared photodetectors based on 3D bulk materials are widely applied in national defense, military, communications, and astronomy fields. The complex application environment requires higher performance and multi-dimensional capability. The emergence of 2D materials has brought new possibilities to develop next-generation infrared detectors. However, the inherent thickness limitations and the immature preparation of 2D materials still lead to low quantum efficiency and slow response speeds. This review summarizes 2D/3D hybrid van der Waals heterojunctions for infrared photodetection. First, the physical properties of 2D and 3D materials related to detection capability, including thickness, band gap, absorption band, quantum efficiency, and carrier mobility, are summarized. Then, the primary research progress of 2D/3D infrared detectors is reviewed from performance improvement (broadband, high-responsivity, fast response) and new functional devices (two-color detectors, polarization detectors). Importantly, combining low-doped 3D and flexible 2D materials can effectively improve the responsivity and detection speed due to a significant depletion region width. Furthermore, combining the anisotropic 2D lattice structure and high absorbance of 3D materials provides a new strategy in high-performance polarization detectors. This paper offers prospects for developing 2D/3D high-performance infrared detection technology.

Defect recombination suppression and carrier extraction improvement for efficient CsPbBr3/SnO2heterojunction photodetectors

Perovskite materials with excellent optical and electronic properties have huge potential in the research field of photodetectors. Constructing heterojunctions and promoting carrier transportation are significant for the development of perovskite-based optoelectronics devices with high performances. Herein, we demonstrated a CsPbBr₃/SnO₂heterojunction photodetector and improved the device performances through post-annealing treatment of SnO₂film. The results indicated that the electrical properties of SnO₂films will make an important impact on carrier extraction, especially for type-II heterojunction. As the electrons transfer layer in CsPbBr₃/SnO₂type-II heterojunction, defects related to oxygen vacancy should be the key factor to affect carrier concentration, induce carriers' limitation and recombination rate. Under proper annealing temperature for SnO₂layer, the recombination rate can decrease to 1.37 × 10²¹cm³s and the spectral responsivity will be highly increased. This work can enhance the understanding on the photoresponse of perovskite photodetectors, and will be helpful for the further optimization and design of optoelectronic devices based on the perovskite heterojunction.

1-Adamantanamine Hydrochloride Resists Environmental Corrosion to Obtain Highly Efficient and Stable Perovskite Solar Cells

Passivating the defective surface of perovskite film is a promising strategy to improve the stability and efficiency of perovskite solar cells (PSCs). Herein, 1-adamantanamine hydrochloride (ATH) is introduced to the upper surface of the perovskite film to heal the defects of the perovskite surface. The best-performance ATH-modified device has a higher efficiency (23.45%) than the champion control device (21.53%). The defects are passivated, interfacial nonradiative recombination is suppressed, and interface stress is released by the ATH deposited on the perovskite film, leading to longer carrier lifetimes and enhancement in open-circuit voltage (V_OC) and fill factor (FF) of the PSCs. With obvious improvement, V_OC and FF of 1.159 V and 0.796 for the control device are raised to 1.178 V and 0.826 for the ATH-modified device, respectively. Finally, during an operational stability measurement of more than 1000 h, the ATH-treated PSC exhibited better moisture resistance, thermal persistence, and light stability.

Highly efficient and stable near-infrared photodetectors enabled from passivated tin-lead hybrid perovskites

Tin-lead perovskite-based photodetectors have a wide light-absorption wavelength range, which spans 1000 nm. However, the preparation of the mixed tin-lead perovskite films faces two great obstacles, namely easy oxidation of Sn²⁺to Sn⁴⁺and fast crystallization from tin-lead perovskite precursor solutions, thus further resulting in poor morphology and high density of defects in tin-lead perovskite films. In this study, we demonstrated a high-performance of near-infrared photodetectors prepared from a stable low-bandgap (MAPbI₃)_0.5(FASnI₃)_0.5film modified with 2-fluorophenethylammonium iodide (2-F-PEAI). The addition engineering can efficiently improve the crystallization of (MAPbI₃)_0.5(FASnI₃)_0.5films through the coordination binding between Pb²⁺and N atom in 2-F-PEAI, and resulting in a uniform and dense (MAPbI₃)_0.5(FASnI₃)_0.5film. Moreover, 2-F-PEAI suppressed Sn²⁺oxidation and effectively passivated defects in the (MAPbI₃)_0.5(FASnI₃)_0.5film, thereby significantly reducing the dark current in the PDs. Consequently, the near-infrared photodetectors showed a high responsivity with a specific detectivity of over 10¹²Jones at 800 to near-1000 nm. Additionally, the stability of PDs incorporated with 2-F-PEAI has been significantly improved under air conditions, and the device with the 2-F-PEAI ratio of 400:1 retained 80% of its initial efficiency after 450 h storage in air without encapsulation. Finally, 5 × 5 cm²photodetector arrays were fabricated to demonstrate the potential utility of the Sn-Pb perovskite photodetector in optical imaging and optoelectronic applications.

Near-infrared polarization-sensitive photodetection via interfacial symmetry engineering of an Si/MAPbI3 heterostructural single crystal

Methylammonium lead iodide (MAPbI₃) single crystals (SCs) have drawn particular attention in the optoelectronics field, due to their outstanding photoelectric performance. However, the structures of those MAPbI₃ SCs are isotropic, which limits the further application of the materials for polarization-sensitive photodetection. Here, we propose a strategy of symmetry modulation by heterogeneously integrating large-sized MAPbI₃ SCs with silicon (Si) wafers and we give the first demonstration of self-powered near-infrared (NIR) polarization-sensitive photodetection using MAPbI₃ SCs. Created via a delicate solution method, the MAPbI₃/Si heterostructures show a high crystalline quality and a solid interfacial connection. More importantly, the built-in electric field resulting from the band bending at the MAPbI₃/Si heterostructure interface generates polar symmetry, which enables directional transport of photogenerated carriers, making the MAPbI₃/Si heterostructures highly polarization-sensitive. Consequently, in the self-powered mode, NIR photodetectors of MAPbI₃/Si heterostructures exhibit large polarization ratios of 3.3 at 785 nm and 2.8 at 940 nm. Moreover, a high detectivity of 7.35 × 10¹² Jones of the present devices is also achieved. Our work gives the first demonstration of self-powered polarization-sensitive photodetection of MAPbI₃ SCs and provides a strategy to design polarization-sensitive materials beyond the conventional limitations induced by isotropic structures.

Photogating Effect-Driven Photodetectors and Their Emerging Applications

Rather than generating a photocurrent through photo-excited carriers by the photoelectric effect, the photogating effect enables us to detect sub-bandgap rays. The photogating effect is caused by trapped photo-induced charges that modulate the potential energy of the semiconductor/dielectric interface, where these trapped charges contribute an additional electrical gating-field, resulting in a shift in the threshold voltage. This approach clearly separates the drain current in dark versus bright exposures. In this review, we discuss the photogating effect-driven photodetectors with respect to emerging optoelectrical materials, device structures, and mechanisms. Representative examples that reported the photogating effect-based sub-bandgap photodetection are revisited. Furthermore, emerging applications using these photogating effects are highlighted. The potential and challenging aspects of next-generation photodetector devices are presented with an emphasis on the photogating effect.

Visible and infrared photodiode based on γ-InSe/Ge van der Waals heterojunction for polarized detection and imaging

Broadband photodetectors are a category of optoelectronic devices that have important applications in modern communication information. γ-InSe is a newly developed two-dimensional (2D) layered semiconductor with an air-stable and low-symmetry crystal structure that is suitable for polarization-sensitive photodetection. Herein, we report a P-N photodiode based on 3D Ge/2D γ-InSe van der Waals heterojunction (vdWH). A built-in electric field is introduced at the p-Ge/n-InSe interface to suppress the dark current and accelerate the separation of photogenerated carriers. Moreover, the heterojunction belongs to the accumulation mode with a well-designed type-II band arrangement, which is suitable for the fast separation of photogenerated carriers. Driven by these advantages, the device exhibits excellent photovoltaic performance within the detection range of 400 to 1600 nm and shows a double photocurrent peak at around 405 and 1550 nm. In particular, the responsivity (R) is up to 9.78 A W^-1 and the specific detectivity (D*) reaches 5.38 × 10¹¹ Jones with a fast response speed of 46/32 μs under a 1550 nm laser. Under blackbody radiation, the room temperature R and D* in the mid-wavelength infrared region are 0.203 A W^-1 and 5.6 × 10⁸ Jones, respectively. Moreover, polarization-sensitive light detection from 405-1550 nm was achieved, with the dichroism ratios of 1.44, 3.01, 1.71, 1.41 and 1.34 at 405, 635, 808, 1310 and 1550 nm, respectively. In addition, high-resolution single-pixel imaging capability is demonstrated at visible and near-infrared wavelengths. This work reveals the great potential of the γ-InSe/Ge photodiode for high-performance, broadband, air-stable and polarization-sensitive photodetection.

Pyro-Phototronic Effect Enhanced Pyramid Structured p-Si/n-ZnO Nanowires Heterojunction Photodetector

The emergence of nanomaterials has brought about the development of miniature photodetectors into a new stage, and ZnO nanomaterials are currently one of the most popular research objects. Here, the performance of a photodetector consisting of micropyramid structured p-Si/n-ZnO NWs heterojunction constructed by an anisotropic chemical etching and hydrothermal method is optimized by using the pyro-phototronic effect, and the photoresponses of the device to 405 and 648 nm lasers are investigated. The results show that, with the introduction of pyro-phototronic effect, the photoresponsivity R_pyro increases to 208 times that of R_photo when the wavelength is 405 nm and the optical power density is 0.0693 mW/cm². Moreover, with the increase of the chopper frequency, the photocurrent increases by more than 3 times, and the photoresponsivity is also increased by a factor of 4.5, making it possible to detect ultrafast pulsed light. In addition, in order to increase the current collection efficiency, a thin film Al layer was deposited as the back electrode on the basis of the device, and the photocurrent and photoresponsivity are significantly improved. Finally, the coupling between the pyro-phototronic effect and the piezo-phototronic effect is analyzed by applying compressive strain to the photodetector. When the compressive strain is -1.02%, the photocurrent decreases by 31.4% and the photoresponsivity decreases by 27.9% due to the opposite direction between laser illumination induced pyroelectric polarization charges and compressive strain induced piezoelectric polarization charges. This work not only demonstrates the great potential of pyro-phototronic effect in enhancing the silicon-based heterojunction photodetectors for high-performance photodetection and ultrafast pulsed light detection but also provides assistance for a better understanding of the coupling mechanism between pyro-phototronic and piezo-phototronic effects.