Bi2 Te3 /Bi2 Se3 /Bi2 S3 Cascade Heterostructure for Fast-Response and High-Photoresponsivity Photodetector and High-Efficiency Water Splitting with a Small Bias Voltage

High-Sensitivity Photoelectrochemical Ultraviolet Photodetector with Stable pH-Universal Adaptability Based on Whole Single-Crystal Integrated Self-Supporting 4H-SiC Nanoarrays

Emerging photoelectrochemical (PEC) photodetectors (PDs) have notable advantages over conventional PDs and have attracted extensive attention. However, harsh liquid environments, such as those with high corrosivity and attenuation, substantially restrict their widespread application. Moreover, most PEC PDs are constructed by assembling numerous nanostructures on current collector substrates, which inevitably contain abundant interfaces and defects, thus greatly weakening the properties of PDs. To address these challenges, a high-performance pH-universal PEC ultraviolet (UV) PD based on a whole single-crystal integrated self-supporting 4H-SiC nanopore array photoelectrode is constructed, which is fabricated using a two-step anodic oxidation approach. The PD exhibits excellent photodetection behavior, with high responsivity (218.77 mA W-1), detectivity (6.64 × 1013 Jones), external quantum efficiency (72.47%), and rapid rise/decay times (17/48 ms) under 375 nm light illumination with a low intensity of 0.15 mW cm-2 and a bias voltage of 0.6 V, which is fall in the state-of-the-art of the wide-bandgap semiconductor-based PDs reported thus far. Furthermore, the SiC PEC PD exhibits excellent photoresponse and long-term operational stability in pH-universal liquid environments. The improved photodetection performance of the SiC PEC PD is primarily attributed to the synergistic effect of the nanopore array structure, integrated self-supporting configuration, and single-crystal structure of the whole photoelectrode.

Incorporating ReS2 Nanosheet into ZnIn2S4 Nanoflower as Synergistic Z-Scheme Photocatalyst for Highly Effective and Stable Visible-Light-Driven Photocatalytic Hydrogen Evolution and Degradation

Inspired by natural photosynthesis, the visible-light-driven Z-scheme system is very effective and promising for boosting photocatalytic hydrogen production and pollutant degradation. Here, a synergistic Z-scheme photocatalyst is constructed by coupling ReS2 nanosheet and ZnIn2S4 nanoflower and the experimental evidence for this direct Z-scheme heterostructure is provided by X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and electron paramagnetic resonance. Consequently, such a unique nanostructure makes this Z-scheme heterostructure exhibit 23.7 times higher photocatalytic hydrogen production than that of ZnIn2S4 nanoflower. Moreover, the ZnIn2S4/ReS2 photocatalyst is also very stable for photocatalytic hydrogen evolution, almost without activity decay even storing for two weeks. Besides, this Z-scheme heterostructure also exhibits superior photocatalytic degradation rates of methylene blue (1.7 × 10-2 min-1) and mitoxantrone (4.2 × 10-3 min-1) than that of ZnIn2S4 photocatalyst. The ultraviolet-visible absorption spectra, transient photocurrent spectra, open-circuit potential measurement, and electrochemical impedance spectroscopy reveal that the superior photocatalytic performance of ZnIn2S4/ReS2 heterostructure is mostly attributed to its broad and strong visible-light absorption, effective separation of charge carrier, and improved redox ability. This work provides a promising nanostructure design of a visible-light-driven Z-scheme heterostructure to simultaneously promote photocatalytic reduction and oxidation activity.

High-Performance Flexible Broadband Photoelectrochemical Photodetector Based on Molybdenum Telluride

Flexible broadband photodetectors are desired but challenging to be fabricated for next-generation wearable intelligent optoelectronic devices. Considering the narrow bandgap and strong light absorption, molybdenum telluride (MoTe2) based photoelectrochemical photodetectors are successfully assembled by liquid phase exfoliation accompanied with the electrophoretic deposited method. This MoTe2-based photodetector shows a broadband detection in ultraviolet-near-infrared band, long-term stability within 18000 s, and fast response in millisecond-level (response time≈19 ms, recovery time≈26 ms). More importantly, even though the MoTe2 photodetector is bent and twisted at a high degree for several hundred times, it still shows excellent flexibility with stable on-off switching characteristics. Additionally, this photodetector displays a good response for rotation angles in the range from 0° to 360°, and the extracted Iph maintain almost the same value approximately 0.97 µA cm-2, suggesting an omnidirectional detection capability. This work demonstrates the proposed flexible photoanode shows a great potential in future broadband omnidirectional detection systems.

Review on synthetic approaches and PEC activity performance of bismuth binary and mixed-anion compounds for potential applications in marine engineering

Photoelectrochemical (PEC) technology in marine engineering holds significant importance due to its potential to address various challenges in the marine environment. Currently, PEC-type applications in marine engineering offer numerous benefits, including sustainable energy generation, water desalination and treatment, photodetection, and communication. Finding novel efficient photoresponse semiconductors is of great significance for the development of PEC-type techniques in the marine space. Bismuth-based semiconductor materials possess suitable and tunable bandgap structures, high carrier mobility, low toxicity, and strong oxidation capacity, which gives them great potential for PEC-type applications in marine engineering. In this paper, the structure and properties of bismuth binary and mixed-anion semiconductors have been reviewed. Meanwhile, the recent progress and synthetic approaches were discussed from the point of view of the application prospects. Finally, the issues and challenges of bismuth binary and mixed-anion semiconductors in PEC-type photodetection and hydrogen generation are analyzed. Thus, this perspective will not only stimulate the further investigation and application of bismuth binary and mixed-anion semiconductors in marine engineering but also help related practitioners understand the recent progress and potential applications of bismuth binary and mixed-anion compounds.

Bi2Te3 nanosheets promoted Pd for ethylene glycol electrooxidation both in the dark and under visible light irradiation

Ethylene glycol electrooxidation catalyzed by Pd nanoparticles was found to be largely improved by Bi2Te3 nanosheets both in the dark and under visible light irradiation.

Constructing Sequential Type II Heterojunction CQDs/Bi2S3/TiNbO Photoanode with Superior Charge Transfer Capability Toward Stable Photoelectrochemical Water Splitting

Efficient charge transfer and light-trapping units are pivotal prerequisites in the realm of Ti-based photoanode photoelectrochemical (PEC) water splitting. In this work, we successfully synthesized a ternary carbon quantum dots/Bi2S3 quantum dots/Nb-doped TiO2 nanotube arrays (CQDs/Bi2S3/TiNbO) composite photoanode for PEC water splitting. CQDs/Bi2S3/TiNbO composite photoanode exhibited a considerably elevated photocurrent density of 8.80 mA cm-2 at 1.23 V vs the reversible hydrogen electrode, which was 20.00 times better than that of TiO2 (0.44 mA cm-2). Furthermore, the CQDs/Bi2S3/TiNbO composite photoanode attested to exceptional stability, maintaining 92.54% of its initial current after 5 h of stability measurement. Nb-doping boosted the electrical conductivity, facilitating charge transfer at the solid-liquid interface. Moderate amounts of Bi2S3 quantum dots (QDs) and CQDs deposited on TiNbO provided abundant active sites for the electrolyte-photoanode interaction. Simultaneously, Bi2S3 QDs and CQDs synergistically functioned as light-trapping units to broaden the light absorption range from 396 to 530 nm, stimulating increased carrier generation within the composite photoanode. In comparison with pristine TiO, CQDs/Bi2S3/TiNbO photoanodes possessed a superior ability to promote interfacial reactions. This study may provide a strategy for developing high-performance Ti-based photoanodes with efficient charge transfer and light trapping units for highly driving solar-to-hydrogen conversion.

Tailoring Bi2Se3 Topological Insulator for Visible-NIR Photodetectors with Schottky Contacts Using Liquid Phase Exfoliation

Layered semiconductors of the V-VI group have attracted considerable attention in optoelectronic applications owing to their atomically thin structures. They offer thickness-dependent optical and electronic properties, promising ultrafast response time, and high sensitivity. Compared to the bulk, 2D bismuth selenide (Bi2Se3) is recently considered a highly promising material. In this study, 2D nanosheets are synthesized by prolonged sonication in two different solvents, such as N-methyl-2-pyrrolidone (NMP) and chitosan-acetic acid solution (CS-HAc), using the liquid-phase exfoliation (LPE) method. X-ray diffraction confirms the amorphous nature of exfoliated 2D nanosheets with maximum peak intensity at the same position (015) crystal plane as that obtained in its bulk counterpart. SEM confirms the thin 2D nanosheet-like morphology. Successful exfoliation of Bi2Se3 nanosheets up to five layers is achieved using CS-HAc solvent. The as-synthesized 2D nanosheets in different solvents are employed to fabricate the photodetector. At minimum selected power density, the photodetector fabricated using exfoliated ultrathin 2D nanosheets exhibits the highest range of responsivity, varying from 15 to 2.5 mA/W, and detectivity ranging from 2.83 × 109 to 6.37 × 107. Ultrathin 2D Bi2Se3 nanosheets have fast rise and fall times, ranging from 0.01 to 0.12 and 0.01 to 0.06 s, respectively, at different wavelengths. Ultrathin Bi2Se3 nanosheets have improved photodetection parameters as compared to multilayered nanosheets due to the high surface to volume ratio, reduced recombination and trapping of charge carrier, improved carrier confinement, and faster carrier transport due to the thin layer.

Direct Z-Scheme Heterostructure of Vertically Oriented SnS2 Nanosheet on BiVO4 Nanoflower for Self-Powered Photodetectors and Water Splitting

The construction of nanostructured Z-scheme heterostructure is a powerful strategy for realizing high-performance photoelectrochemical (PEC) devices such as self-powered photodetectors and water splitting. Considering the band structure and internal electric field direction, BiVO4 is a promising candidate to construct SnS2 -based heterostructure. Herein, the direct Z-scheme heterostructure of vertically oriented SnS2 nanosheet on BiVO4 nanoflower is rationally fabricated for efficient self-powered PEC photodetectors. The Z-scheme heterostructure is identified by ultraviolet photoelectron spectroscopy, photoluminescence spectroscopy, PEC measurement, and water splitting. The SnS2 /BiVO4 heterostructure shows a superior photodetection performance such as excellent photoresponsivity (10.43 mA W-1 ), fast response time (6 ms), and long-term stability. Additionally, by virtue of efficient Z-scheme charge transfer and unique light-trapping nanostructure, the SnS2 /BiVO4 heterostructure also displays a remarkable photocatalytic hydrogen production rate of 54.3 µmol cm-2 h-1 in Na2 SO3 electrolyte. Furthermore, the synergistic effect between photo-activation and bias voltage further improves the PEC hydrogen production rate of 360 µmol cm-2 h-1 at 0.8 V, which is an order of magnitude above the BiVO4 . The results provide useful inspiration for designing direct Z-scheme heterostructures with special nanostructured morphology to signally promote the performance of PEC devices.

Polarization-Sensitive Photodetector Based on High Crystallinity Quasi-1D BiSeI Nanowires Synthesized via Chemical Vapor Deposition

Bismuth chalcohalides (BiSeI and BiSI), a class of superior light absorbers, have recently garnered great attention owing to their promise in constructing next-generation optoelectronic devices. However, to date, the photodetection application of bismuth chalcohalides is still limited due to the challenge in controllable preparation. Herein, the synthesis of large-scale quasi-1D BiSeI nanowires via chemical vapor deposition growth is reported. By precisely tuning the growth temperature and the Se supply, it can effectively control the growth thermodynamics and kinetics of BiSeI crystal, and thus achieve high purity quasi-1D BiSeI nanowires with high crystal quality, uniform diameter, and tunable domain length. Theory and optical characterizations of the quasi-1D BiSeI nanowires reveal an indirect bandgap of 1.57 eV with prominent optical linear dichroism. As a result, the quasi-1D BiSeI nanowire-based photodetector demonstrates a broadband photoresponse (400-800 nm) with high responsivity of 5880 mA W-1 , fast response speed of 0.11 ms and superior air stability. More importantly, the photodetector displays strong polarization sensitivity (anisotropic ratio = 1.77) under the 532 nm light irradiation. This work will provide important guides to the synthesis of other quais-1D metal chalcohalides and shed light on their potential in constructing novel multifunctional optoelectronic devices.

Quantum tailoring for polarization-discriminating Bi2S3 nanowire photodetectors and their multiplexing optical communication and imaging applications

In this study, cost-efficient atmospheric pressure chemical vapor deposition has been successfully developed to produce well-aligned high-quality monocrystalline Bi2S3 nanowires. By virtue of surface strain-induced energy band reconstruction, the Bi2S3 photodetectors demonstrate a broadband photoresponse across 370.6 to 1310 nm. Upon a gate voltage of 30 V, the responsivity, external quantum efficiency, and detectivity reach 23 760 A W-1, 5.55 × 106%, and 3.68 × 1013 Jones, respectively. The outstanding photosensitivity is ascribed to the high-efficiency spacial separation of photocarriers, enabled by synergy of the axial built-in electric field and type-II band alignment, as well as the pronounced photogating effect. Moreover, a polarization-discriminating photoresponse has been unveiled. For the first time, the correlation between quantum confinement and dichroic ratio is systematically explored. The optoelectronic dichroism is established to be negatively correlated with the cross dimension (i.e., width and height) of the channel. Specifically, upon 405 nm illumination, the optimized dichroic ratio reaches 2.4, the highest value among the reported Bi2S3 photodetectors. In the end, proof-of-concept multiplexing optical communications and broadband lensless polarimetric imaging have been implemented by exploiting the Bi2S3 nanowire photodetectors as light-sensing functional units. This study develops a quantum tailoring strategy for tailoring the polarization properties of (quasi-)1D material photodetectors whilst depicting new horizons for the next-generation opto-electronics industry.

Broadband All-Optical THz Modulator Based on Bi2Te3/Si Heterostructure Driven by UV-Visible Light

All-optical terahertz (THz) modulators have received tremendous attention due to their significant role in developing future sixth-generation technology and all-optical networks. Herein, the THz modulation performance of the Bi₂Te₃/Si heterostructure is investigated via THz time-domain spectroscopy under the control of continuous wave lasers at 532 nm and 405 nm. Broadband-sensitive modulation is observed at 532 nm and 405 nm within the experimental frequency range from 0.8 to 2.4 THz. The modulation depth reaches 80% under the 532 nm laser illumination with a maximum power of 250 mW and 96% under 405 nm illumination with a high power of 550 mW. The mechanism of the largely enhanced modulation depth is attributed to the construction of a type-II Bi₂Te₃/Si heterostructure, which could promote photogenerated electron and hole separation and increase carrier density dramatically. This work proves that a high photon energy laser can also achieve high-efficiency modulation based on the Bi₂Te₃/Si heterostructure, and the UV-Visible control laser may be more suitable for designing advanced all-optical THz modulators with micro-level sizes.

Enhanced Photoresponse of High Crystalline Bi2Se3 Thin-Films Using Patterned Substrates

High-quality Bi₂Se₃ thin films with topological insulating properties at room temperature have recently attracted much attention as one of the promising materials for realizing innovative electronic and optoelectronic devices. Here, we report the high crystallinity growth of Bi₂Se₃ thin films on a patterned sapphire substrate (PSS) by using a vapor-phase transport deposition with minimizing thermal dissociation of Se atoms vaporized in Bi₂Se₃ powder. This PSS not only reduces the large dislocation of heterogeneously grown Bi₂Se₃ on a sapphire substrate but also induces enhanced light absorption in the visible to near-infrared (IR) ranges compared to Bi₂Se₃ on planar sapphire substrates. Thus, the Bi₂Se₃ thin film laterally grown on the PSS reveals uniform surface properties and high crystallinity in the rhombohedral lattice phase with a full width at half maximum of 0.06° for the XRD (003) peak. Also, the photoresponse of the fabricated IR conversion device using Bi₂Se₃/PSS heterostructure exhibits excellent performance and high reliability with no degradation after continuous switching. As a result, the device constructed with the Bi₂Se₃/PSS exhibits one order of magnitude higher NIR induced-photocurrent and 1-2 orders of magnitude faster photo-switching than that with Bi₂Se₃/Al₂O₃. Such an enhancement in the device performance of Bi₂Se₃/PSS is confirmed by the increased absorption spectra in visible and NIR ranges and the improved light absorption distribution.