1
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Shu W, Tang Y, Su B, Hong A, Lin L, Zhou X, Yan Z, Liu JM. Enhanced Thermoelectric Performance of p-type AgSbTe 2 via Cu Doping. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 39330927 DOI: 10.1021/acsami.4c05454] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/28/2024]
Abstract
Recently, the p-type semiconductor AgSbTe2 has received a great deal of attention due to its promising thermoelectric performance in intermediate temperatures (300-700 K). However, its performance is limited by the suboptimal carrier concentration and the presence of Ag2Te impurities. Herein, we synthesized AgSb1-xCuxTe2 (x = 0, 0.02, 0.04, and 0.06) and investigated the effect of Cu doping on the thermoelectric properties of AgSbTe2. Our results indicate that Cu doping suppresses the Ag2Te impurities, raises the carrier concentration, and results in an improved power factor (PF). The calculation reveals that Cu doping downshifts the Fermi energy level, reduces the energy band gap and the difference among several valence band maximums, and thereby explains the improvement of PF. In addition, Cu doping reduces the thermal conductivity, possibly attributed to the inhibition of Ag2Te impurities and the phonon softening of the AgSb1-xCuxTe2. Overall, Cu doping improves the ZT of AgSb1-xCuxTe2. Among all samples, AgSb0.96Cu0.04Te2 has a maximum ZT of ∼1.45 at 498 K and an average ZT of ∼1.11 from 298 to 573 K.
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Affiliation(s)
- Wenjie Shu
- National Laboratory of Solid-State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China
| | - Yuxia Tang
- National Laboratory of Solid-State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China
| | - Bingwen Su
- National Laboratory of Solid-State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China
| | - Aijun Hong
- School of Physics, Communication and Electronics, Jiangxi Normal University, Nanchang 330022, China
| | - Lin Lin
- Department of Applied Physics, College of Science, Nanjing Forestry University, Nanjing 210037, China
| | - Xiaohui Zhou
- National Laboratory of Solid-State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China
| | - Zhibo Yan
- National Laboratory of Solid-State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China
| | - Jun-Ming Liu
- National Laboratory of Solid-State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and School of Physics, Nanjing University, Nanjing 210093, China
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2
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Wang L, Shi XL, Li L, Hong M, Lin B, Miao P, Ding J, Yuan N, Zheng S, Chen ZG. Zinc Doping Induces Enhanced Thermoelectric Performance of Solvothermal SnTe. Chem Asian J 2024; 19:e202400130. [PMID: 38380867 DOI: 10.1002/asia.202400130] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/18/2024] [Accepted: 02/19/2024] [Indexed: 02/22/2024]
Abstract
The creation of hierarchical nanostructures can effectively strengthen phonon scattering to reduce lattice thermal conductivity for improving thermoelectric properties in inorganic solids. Here, we use Zn doping to induce a remarkable reduction in the lattice thermal conductivity in SnTe, approaching the theoretical minimum limit. Microstructure analysis reveals that ZnTe nanoprecipitates can embed within SnTe grains beyond the solubility limit of Zn in the Zn alloyed SnTe. These nanoprecipitates result in a substantial decrease of the lattice thermal conductivity in SnTe, leading to an ultralow lattice thermal conductivity of 0.50 W m-1 K-1 at 773 K and a peak ZT of ~0.48 at 773 K, marking an approximately 45 % enhancement compared to pristine SnTe. This study underscores the effectiveness of incorporating ZnTe nanoprecipitates in boosting the thermoelectric performance of SnTe-based materials.
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Affiliation(s)
- Lijun Wang
- School of Material Science & Engineering, National Experimental Demonstration Center for Materials Science and Engineering, Jiangsu Province Cultivation base for State Key Laboratory of Photovoltaic Science and Technology, Changzhou University, Changzhou, Jiangsu, 213164, China
| | - Xiao-Lei Shi
- School of Chemistry and Physics, ARC Research Hub in Zero-emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of Technology, Brisbane, Queensland, 4000, Australia
| | - Lvzhou Li
- Yangzhou Technology Innovation Research Center for Carbon Neutrality of Yangzhou University, School of Mechanical Engineering, Yangzhou University, Yangzhou, 225127, Jiangsu, China
| | - Min Hong
- Centre for Future Materials and School of Engineering, University of Southern Queensland, Springfield Central, Queensland, 4300, Australia
| | - Bencai Lin
- School of Material Science & Engineering, National Experimental Demonstration Center for Materials Science and Engineering, Jiangsu Province Cultivation base for State Key Laboratory of Photovoltaic Science and Technology, Changzhou University, Changzhou, Jiangsu, 213164, China
| | - Pengcheng Miao
- School of Material Science & Engineering, National Experimental Demonstration Center for Materials Science and Engineering, Jiangsu Province Cultivation base for State Key Laboratory of Photovoltaic Science and Technology, Changzhou University, Changzhou, Jiangsu, 213164, China
| | - Jianning Ding
- Yangzhou Technology Innovation Research Center for Carbon Neutrality of Yangzhou University, School of Mechanical Engineering, Yangzhou University, Yangzhou, 225127, Jiangsu, China
| | - Ningyi Yuan
- School of Material Science & Engineering, National Experimental Demonstration Center for Materials Science and Engineering, Jiangsu Province Cultivation base for State Key Laboratory of Photovoltaic Science and Technology, Changzhou University, Changzhou, Jiangsu, 213164, China
| | - Shuqi Zheng
- State Key Laboratory of Heavy Oil Processing, College of New Energy and Materials, China University of Petroleum, Beijing, 102249, China
| | - Zhi-Gang Chen
- School of Chemistry and Physics, ARC Research Hub in Zero-emission Power Generation for Carbon Neutrality, and Centre for Materials Science, Queensland University of Technology, Brisbane, Queensland, 4000, Australia
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3
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Li Z, Pal K, Lee H, Wolverton C, Xia Y. Electron-Phonon Interaction Mediated Gigantic Enhancement of Thermoelectric Power Factor Induced by Topological Phase Transition. NANO LETTERS 2024; 24:5816-5823. [PMID: 38684443 DOI: 10.1021/acs.nanolett.4c01008] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/02/2024]
Abstract
We propose an effective strategy to significantly enhance the thermoelectric power factor (PF) of a series of 2D semimetals and semiconductors by driving them toward a topological phase transition (TPT). Employing first-principles calculations with an explicit consideration of electron-phonon interactions, we analyze the electronic transport properties of germanene across the TPT by applying hydrogenation and biaxial strain. We reveal that the nontrivial semimetal phase, hydrogenated germanene with 8% biaxial strain, achieves a considerable 4-fold PF enhancement, attributed to the highly asymmetric electronic structure and semimetallic nature of the nontrivial phase. We extend the strategy to another two representative 2D materials (stanene and HgSe) and observe a similar trend, with a marked 7-fold and 5-fold increase in PF, respectively. The wide selection of functional groups, universal applicability of biaxial strain, and broad spectrum of 2D semimetals and semiconductors render our approach highly promising for designing novel 2D materials with superior thermoelectric performance.
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Affiliation(s)
- Zhi Li
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Koushik Pal
- Department of Physics, Indian Institute of Technology Kanpur, Kanpur, UP 208016, India
| | - Huiju Lee
- Department of Mechanical and Materials Engineering, Portland State University, Portland, Oregon 97201, United States
| | - Chris Wolverton
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Yi Xia
- Department of Mechanical and Materials Engineering, Portland State University, Portland, Oregon 97201, United States
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4
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Li R, Zhang F, Ou W, Tan X, Zhu J, Ren D, Ang R. Multifunctional GeMnTe 2 Synergistically Optimizes Thermoelectric Properties of SnTe-In 2Te 3 Alloys. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 38038336 DOI: 10.1021/acsami.3c13907] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/02/2023]
Abstract
SnTe-In2Te3 alloys ensure excellent electrical properties in the whole temperature region due to the resonant level. Nevertheless, temperature-sensitive resonance states and single phonon scattering restrict further improvement of thermoelectric performance. Consequently, it is anticipated that additional electrically independent scattering sources should be introduced to impede phonon transport. Here, the SnTe-In2Te3-GeMnTe2 alloy is prepared by further solidifying cubic GeMnTe2, which demonstrates multiple modulation effects. The highly redissolved Mn2+ promotes the valence band convergence, enhances the Seebeck coefficient at higher temperature, and balances the possible weakened resonance level effect at higher carrier concentrations, and a high average power factor (1.94 mW m-1 K-2) is realized over the entire temperature range. Additionally, compensatory vacancies, substitutions, and Ge/Mn precipitates are easily constructed with GeMnTe2 alloying, leading to a further reduction in lattice thermal conductivity, which reaches κl ∼ 0.6 W m-1 K-1 at 850 K. Ultimately, a high peak zT of ∼1.25 (850 K) and a zTave of 0.72 (300-850 K) are realized in (SnTe)2.91(In2Te3)0.03(Ge0.5Mn0.5Te)1.2, and the maximum thermoelectric conversion efficiency of ∼2.8% (ΔT ∼ 450 K) is achieved. The present results indicate multiple effects of GeMnTe2 in enhancing the thermoelectric performance of SnTe-In2Te3 alloys.
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Affiliation(s)
- Ruiheng Li
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China
| | - Fujie Zhang
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China
| | - Wenxin Ou
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China
| | - Xiaobo Tan
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China
| | - Jianglong Zhu
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China
| | - Ding Ren
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China
| | - Ran Ang
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, China
- Institute of New Energy and Low-Carbon Technology, Sichuan University, Chengdu 610065, China
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5
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Nan B, Song X, Chang C, Xiao K, Zhang Y, Yang L, Horta S, Li J, Lim KH, Ibáñez M, Cabot A. Bottom-Up Synthesis of SnTe-Based Thermoelectric Composites. ACS APPLIED MATERIALS & INTERFACES 2023; 15:23380-23389. [PMID: 37141543 DOI: 10.1021/acsami.3c00625] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
There is a need for the development of lead-free thermoelectric materials for medium-/high-temperature applications. Here, we report a thiol-free tin telluride (SnTe) precursor that can be thermally decomposed to produce SnTe crystals with sizes ranging from tens to several hundreds of nanometers. We further engineer SnTe-Cu2SnTe3 nanocomposites with a homogeneous phase distribution by decomposing the liquid SnTe precursor containing a dispersion of Cu1.5Te colloidal nanoparticles. The presence of Cu within the SnTe and the segregated semimetallic Cu2SnTe3 phase effectively improves the electrical conductivity of SnTe while simultaneously reducing the lattice thermal conductivity without compromising the Seebeck coefficient. Overall, power factors up to 3.63 mW m-1 K-2 and thermoelectric figures of merit up to 1.04 are obtained at 823 K, which represent a 167% enhancement compared with pristine SnTe.
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Affiliation(s)
- Bingfei Nan
- Catalonia Institute for Energy Research─IREC, Sant Adrià de Besòs, Barcelona 08930, Spain
- Universitat de Barcelona, Martí i Franquès 1, Barcelona 08028, Spain
| | - Xuan Song
- The State Key Laboratory of Chemical Engineering, Department of Chemical Engineering, Tsinghua University, Beijing 100084, China
| | - Cheng Chang
- Institute of Science and Technology Austria (ISTA), Am Campus 1, Klosterneuburg 3400, Austria
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Ke Xiao
- Catalonia Institute for Energy Research─IREC, Sant Adrià de Besòs, Barcelona 08930, Spain
- Universitat de Barcelona, Martí i Franquès 1, Barcelona 08028, Spain
| | - Yu Zhang
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, State College, Pennsylvania 16802, United States
| | - Linlin Yang
- Catalonia Institute for Energy Research─IREC, Sant Adrià de Besòs, Barcelona 08930, Spain
- Universitat de Barcelona, Martí i Franquès 1, Barcelona 08028, Spain
| | - Sharona Horta
- Institute of Science and Technology Austria (ISTA), Am Campus 1, Klosterneuburg 3400, Austria
| | - Junshan Li
- Institute of Advanced Study, Chengdu University, Chengdu 610106, China
| | - Khak Ho Lim
- Institute of Zhejiang University─Quzhou, 99 Zheda Rd, Quzhou 324000, Zhejiang, P. R. China
- College of Chemical and Biological Engineering, Zhejiang University, 38 Zheda Rd, Hangzhou 310007, Zhejiang, P. R. China
| | - Maria Ibáñez
- Institute of Science and Technology Austria (ISTA), Am Campus 1, Klosterneuburg 3400, Austria
| | - Andreu Cabot
- Catalonia Institute for Energy Research─IREC, Sant Adrià de Besòs, Barcelona 08930, Spain
- ICREA, Pg. Lluís Companys 23, Barcelona 08010, Catalonia, Spain
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6
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Pathak R, Dutta P, Srivastava A, Rawat D, Gopal RK, Singh AK, Soni A, Biswas K. Strong Anharmonicity‐Induced Low Thermal Conductivity and High n‐type Mobility in the Topological Insulator Bi
1.1
Sb
0.9
Te
2
S. Angew Chem Int Ed Engl 2022; 61:e202210783. [DOI: 10.1002/anie.202210783] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/22/2022] [Indexed: 11/07/2022]
Affiliation(s)
- Riddhimoy Pathak
- New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) Jakkur P.O. Bangalore 560064 India
| | - Prabir Dutta
- New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) Jakkur P.O. Bangalore 560064 India
| | - Ashutosh Srivastava
- Materials Research Centre Indian Institute of Science Bangalore 560012 India
| | - Divya Rawat
- School of Basic Sciences Indian Institute of Technology Mandi Mandi, Himachal Pradesh 175005 India
| | - Radha Krishna Gopal
- New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) Jakkur P.O. Bangalore 560064 India
| | - Abhishek K. Singh
- Materials Research Centre Indian Institute of Science Bangalore 560012 India
| | - Ajay Soni
- School of Basic Sciences Indian Institute of Technology Mandi Mandi, Himachal Pradesh 175005 India
| | - Kanishka Biswas
- New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) Jakkur P.O. Bangalore 560064 India
- School of Advanced Materials and International Centre of Materials Science Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O. Bangalore 560064 India
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7
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Chang C, Liu Y, Ho Lee S, Chiara Spadaro M, Koskela KM, Kleinhanns T, Costanzo T, Arbiol J, Brutchey RL, Ibáñez M. Surface Functionalization of Surfactant-Free Particles: A Strategy to Tailor the Properties of Nanocomposites for Enhanced Thermoelectric Performance. Angew Chem Int Ed Engl 2022; 61:e202207002. [PMID: 35799379 PMCID: PMC9542085 DOI: 10.1002/anie.202207002] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/12/2022] [Indexed: 11/06/2022]
Abstract
The broad implementation of thermoelectricity requires high-performance and low-cost materials. One possibility is employing surfactant-free solution synthesis to produce nanopowders. We propose the strategy of functionalizing "naked" particles' surface by inorganic molecules to control the nanostructure and, consequently, thermoelectric performance. In particular, we use bismuth thiolates to functionalize surfactant-free SnTe particles' surfaces. Upon thermal processing, bismuth thiolates decomposition renders SnTe-Bi2 S3 nanocomposites with synergistic functions: 1) carrier concentration optimization by Bi doping; 2) Seebeck coefficient enhancement and bipolar effect suppression by energy filtering; and 3) lattice thermal conductivity reduction by small grain domains, grain boundaries and nanostructuration. Overall, the SnTe-Bi2 S3 nanocomposites exhibit peak z T up to 1.3 at 873 K and an average z T of ≈0.6 at 300-873 K, which is among the highest reported for solution-processed SnTe.
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Affiliation(s)
- Cheng Chang
- Institute of Science and Technology AustriaAm Campus 13400KlosterneuburgAustria
| | - Yu Liu
- Institute of Science and Technology AustriaAm Campus 13400KlosterneuburgAustria
| | - Seung Ho Lee
- Institute of Science and Technology AustriaAm Campus 13400KlosterneuburgAustria
| | | | | | - Tobias Kleinhanns
- Institute of Science and Technology AustriaAm Campus 13400KlosterneuburgAustria
| | - Tommaso Costanzo
- Institute of Science and Technology AustriaAm Campus 13400KlosterneuburgAustria
| | - Jordi Arbiol
- Catalan Institute of Nanoscience and Nanotechnology (ICN2)CSIC, and BIST08193Barcelona, CataloniaSpain
- ICREAPg. Lluís Companys 2308010Barcelona, CataloniaSpain
| | - Richard L. Brutchey
- Department of ChemistryUniversity of Southern CaliforniaLos AngelesCA 90089USA
| | - Maria Ibáñez
- Institute of Science and Technology AustriaAm Campus 13400KlosterneuburgAustria
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8
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Chang C, Liu Y, Ho Lee S, Chiara Spadaro M, Koskela KM, Kleinhanns T, Costanzo T, Arbiol J, Brutchey RL, Ibáñez M. Surface Functionalization of Surfactant-Free Particles: A Strategy to Tailor the Properties of Nanocomposites for Enhanced Thermoelectric Performance. ANGEWANDTE CHEMIE (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 134:e202207002. [PMID: 38505739 PMCID: PMC10947131 DOI: 10.1002/ange.202207002] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/12/2022] [Indexed: 11/07/2022]
Abstract
The broad implementation of thermoelectricity requires high-performance and low-cost materials. One possibility is employing surfactant-free solution synthesis to produce nanopowders. We propose the strategy of functionalizing "naked" particles' surface by inorganic molecules to control the nanostructure and, consequently, thermoelectric performance. In particular, we use bismuth thiolates to functionalize surfactant-free SnTe particles' surfaces. Upon thermal processing, bismuth thiolates decomposition renders SnTe-Bi2S3 nanocomposites with synergistic functions: 1) carrier concentration optimization by Bi doping; 2) Seebeck coefficient enhancement and bipolar effect suppression by energy filtering; and 3) lattice thermal conductivity reduction by small grain domains, grain boundaries and nanostructuration. Overall, the SnTe-Bi2S3 nanocomposites exhibit peak z T up to 1.3 at 873 K and an average z T of ≈0.6 at 300-873 K, which is among the highest reported for solution-processed SnTe.
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Affiliation(s)
- Cheng Chang
- Institute of Science and Technology AustriaAm Campus 13400KlosterneuburgAustria
| | - Yu Liu
- Institute of Science and Technology AustriaAm Campus 13400KlosterneuburgAustria
| | - Seung Ho Lee
- Institute of Science and Technology AustriaAm Campus 13400KlosterneuburgAustria
| | | | | | - Tobias Kleinhanns
- Institute of Science and Technology AustriaAm Campus 13400KlosterneuburgAustria
| | - Tommaso Costanzo
- Institute of Science and Technology AustriaAm Campus 13400KlosterneuburgAustria
| | - Jordi Arbiol
- Catalan Institute of Nanoscience and Nanotechnology (ICN2)CSIC, and BIST08193Barcelona, CataloniaSpain
- ICREAPg. Lluís Companys 2308010Barcelona, CataloniaSpain
| | - Richard L. Brutchey
- Department of ChemistryUniversity of Southern CaliforniaLos AngelesCA 90089USA
| | - Maria Ibáñez
- Institute of Science and Technology AustriaAm Campus 13400KlosterneuburgAustria
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9
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Pathak R, Dutta P, Srivastava A, Rawat D, Gopal RK, Singh AK, Soni A, Biswas K. Strong Anharmonicity‐Induced Low Thermal conductivity and High n‐type Mobility in Topological Insulator Bi1.1Sb0.9Te2S. Angew Chem Int Ed Engl 2022. [DOI: 10.1002/ange.202210783] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
Affiliation(s)
- Riddhimoy Pathak
- JNCASR: Jawaharlal Nehru Centre for Advanced Scientific Research NCU INDIA
| | - Prabir Dutta
- JNCASR: Jawaharlal Nehru Centre for Advanced Scientific Research NCU INDIA
| | | | - Divya Rawat
- IIT Mandi: Indian Institute of Technology Mandi Physics INDIA
| | | | | | - Ajay Soni
- IIT Mandi: Indian Institute of Technology Mandi Physics INDIA
| | - Kanishka Biswas
- JNCASR: Jawaharlal Nehru Centre for Advanced Scientific Research New Chemistry Unit Jakkur Bangalore INDIA
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10
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Yang Q, Lyu T, Nan B, Tie J, Xu G. Enabling High Quality Factor and Enhanced Thermoelectric Performance in BiBr 3-Doped Sn 0.93Mn 0.1Te via Band Convergence and Band Sharpening. ACS APPLIED MATERIALS & INTERFACES 2022; 14:32236-32243. [PMID: 35815510 DOI: 10.1021/acsami.2c06822] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Lead-free SnTe-based materials are expected to replace PbTe and have gained much attention from the thermoelectric community. In this work, a maximum ZT of ∼1.31 at 873 K is attained in SnTe via promoting a high quality factor resulting from Mn alloying and BiBr3 doping. The results show that Mn alloying in SnTe converges the L band and the ∑ band in valence bands to supply enhanced valley degeneracy and the density of states effective mass, giving rise to a high power factor of ∼21.67 μW cm-1 K-2 at 723 K in Sn0.93Mn0.1Te. In addition, the subsequent BiBr3 doping can sharpen the top of the valence band to coordinate the contradiction between the band effective mass and the carrier mobility, thus enhancing the carrier mobility while maintaining a relatively large density of states effective mass. Consequently, a maximum power factor of 23.85 μW cm-1 K-2 at 873 K is achieved in Sn0.93Mn0.1Te-0.8 atom % BiBr3. In addition to band sharpening, BiBr3 doping can also effectively suppress the bipolar effect at elevated temperatures and reduce the lattice thermal conductivity by strengthening the point defect phonon scattering. Benefitting from doping BiBr3 in Sn0.93Mn0.1Te optimizes the carrier mobility and suppresses the lattice thermal conductivity, resulting in a dramatically enhanced quality factor. Accordingly, an average ZT of ∼0.62 in the temperature range of 300-873 K is obtained in Sn0.93Mn0.1Te-0.8 atom % BiBr3, ∼250% increase compared with that in Sn1.03Te.
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Affiliation(s)
- Quanxin Yang
- Beijing municipal key lab of advanced energy materials and technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, P. R. China
| | - Tu Lyu
- Beijing municipal key lab of advanced energy materials and technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, P. R. China
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Bohang Nan
- Beijing municipal key lab of advanced energy materials and technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, P. R. China
| | - Jian Tie
- Beijing municipal key lab of advanced energy materials and technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, P. R. China
| | - Guiying Xu
- Beijing municipal key lab of advanced energy materials and technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, P. R. China
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11
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Ghosh T, Dutta M, Sarkar D, Biswas K. Insights into Low Thermal Conductivity in Inorganic Materials for Thermoelectrics. J Am Chem Soc 2022; 144:10099-10118. [PMID: 35652915 DOI: 10.1021/jacs.2c02017] [Citation(s) in RCA: 32] [Impact Index Per Article: 16.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/01/2023]
Abstract
Efficient manipulation of thermal conductivity and fundamental understanding of the microscopic mechanisms of phonon scattering in crystalline solids are crucial to achieve high thermoelectric performance. Thermoelectric energy conversion directly and reversibly converts between heat and electricity and is a promising renewable technology to generate electricity by recovering waste heat and improve solid-state refrigeration. However, a unique challenge in thermal transport needs to be addressed to achieve high thermoelectric performance: the requirement of crystalline materials with ultralow lattice thermal conductivity (κL). A plethora of strategies have been developed to lower κL in crystalline solids by means of nanostructural modifications, introduction of intrinsic or extrinsic phonon scattering centers with tailored shape and dimension, and manipulation of defects and disorder. Recently, intrinsic local lattice distortion and lattice anharmonicity originating from various mechanisms such as rattling, bonding heterogeneity, and ferroelectric instability have found popularity. In this Perspective, we outline the role of manipulation of chemical bonding and structural chemistry on thermal transport in various high-performance thermoelectric materials. We first briefly outline the fundamental aspects of κL and discuss the current status of the popular phonon scattering mechanisms in brief. Then we discuss emerging new ideas with examples of crystal structure and lattice dynamics in exemplary materials. Finally, we present an outlook for focus areas of experimental and theoretical challenges, possible new directions, and integrations of novel techniques to achieve low κL in order to realize high-performance thermoelectric materials.
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Affiliation(s)
- Tanmoy Ghosh
- New Chemistry Unit, International Centre for Materials Science, and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Moinak Dutta
- New Chemistry Unit, International Centre for Materials Science, and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Debattam Sarkar
- New Chemistry Unit, International Centre for Materials Science, and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Kanishka Biswas
- New Chemistry Unit, International Centre for Materials Science, and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
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12
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Zhang F, Qi X, He M, Zheng F, Jin L, Peng Z, Chao X, Yang Z, Wu D. Contrasting roles of Bi-doping and Bi 2Te 3 alloying on the thermoelectric performance of SnTe. Inorg Chem Front 2022. [DOI: 10.1039/d2qi01437h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
A step-by-step band convergence strategy contributes to the enhanced thermoelectric figure of merit ZT in SnTe.
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Affiliation(s)
- Fudong Zhang
- Key Laboratory for Macromolecular Science of Shaanxi Province, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710062, China
| | - Xia Qi
- Key Laboratory for Macromolecular Science of Shaanxi Province, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710062, China
| | - Mingkai He
- Department of Physics, The Chinese University of Hong Kong, Hong Kong 999077, China
| | - Fengshan Zheng
- Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Forschungszentrum Jülich GmbH, 52428 Jülich, Germany
| | - Lei Jin
- Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Forschungszentrum Jülich GmbH, 52428 Jülich, Germany
| | - Zhanhui Peng
- Key Laboratory for Macromolecular Science of Shaanxi Province, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710062, China
| | - Xiaolian Chao
- Key Laboratory for Macromolecular Science of Shaanxi Province, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710062, China
| | - Zupei Yang
- Key Laboratory for Macromolecular Science of Shaanxi Province, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710062, China
| | - Di Wu
- Key Laboratory for Macromolecular Science of Shaanxi Province, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710062, China
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13
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He W, Li N, Wang H, Wang G, Wang G, Lu X, Zhou X. Multiple Effects Promoting the Thermoelectric Performance of SnTe by Alloying with CuSbTe 2 and CuBiTe 2. ACS APPLIED MATERIALS & INTERFACES 2021; 13:52775-52782. [PMID: 34702031 DOI: 10.1021/acsami.1c15614] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
In a SnTe-based thermoelectric material, the naturally high hole concentration caused by cation vacancies and high total thermal conductivity seriously hinder its thermoelectric performance. A recent work shows that alloying SnTe with other compounds from the I-V-VI2 family (I = Ag, Na; V = Sb, Bi; VI = Te) can be considered an effective strategy to boost the figure of merit efficiently via the synergy of manipulating hole concentration and lowering lattice thermal conductivity. Herein, we present a markedly enhanced thermoelectric performance in p-type SnTe through CuPnTe2 (Pn = Sb, Bi) alloying. Moreover, we found that the alloying with both CuSbTe2 and CuBiTe2 can facilitate the valence band convergence of SnTe, but their relative influence is different. Interestingly, compared to CuBiTe2, alloying with CuSbTe2 increases the carrier concentration of SnTe, which suppresses the bipolar effect. Ultimately, under the positive effect of valence band convergence, increased vacancy concentration, and decreased lattice thermal conductivity, compounds with a nominal composition of (SnTe)0.90(CuSbTe2)0.10 attains a peak zT of ∼1.26 at 823 K. In contrast, the thermoelectric performance of (SnTe)1-x(CuBiTe2)x is restricted by the reduced carrier concentration and diminished band gap, showing only a humble maximum zT value of ∼0.91 at 823 K in the sample with a nominal composition of (SnTe)0.96(CuBiTe2)0.04. These results demonstrate the multiple effects on thermoelectric transport during the formation of complex solid solutions.
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Affiliation(s)
- Wenlu He
- Chongqing Key Laboratory of Soft Condensed Matter Physics and Smart Materials, College of Physics, Chongqing University, Chongqing 401331, P. R. China
| | - Nanhai Li
- Chongqing Key Laboratory of Soft Condensed Matter Physics and Smart Materials, College of Physics, Chongqing University, Chongqing 401331, P. R. China
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, P. R. China
| | - Huan Wang
- Chongqing Key Laboratory of Soft Condensed Matter Physics and Smart Materials, College of Physics, Chongqing University, Chongqing 401331, P. R. China
| | - Guiwen Wang
- Analytical and Testing Center, Chongqing University, Chongqing 401331, P. R. China
| | - Guoyu Wang
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, P. R. China
| | - Xu Lu
- Chongqing Key Laboratory of Soft Condensed Matter Physics and Smart Materials, College of Physics, Chongqing University, Chongqing 401331, P. R. China
| | - Xiaoyuan Zhou
- Chongqing Key Laboratory of Soft Condensed Matter Physics and Smart Materials, College of Physics, Chongqing University, Chongqing 401331, P. R. China
- Analytical and Testing Center, Chongqing University, Chongqing 401331, P. R. China
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14
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Jiao WY, Hu R, Han SH, Luo YF, Yuan HM, Li MK, Liu HJ. Surprisingly good thermoelectric performance of monolayer C 3N. NANOTECHNOLOGY 2021; 33:045401. [PMID: 34653997 DOI: 10.1088/1361-6528/ac302c] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/19/2021] [Accepted: 10/15/2021] [Indexed: 06/13/2023]
Abstract
The rapid emergence of graphene has attracted numerous efforts to explore other two-dimensional materials. Here, we combine first-principles calculations and Boltzmann theory to investigate the structural, electronic, and thermoelectric transport properties of monolayer C3N, which exhibits a honeycomb structure very similar to graphene. It is found that the system is both dynamically and thermally stable even at high temperature. Unlike graphene, the monolayer has an indirect band gap of 0.38 eV and much lower lattice thermal conductivity. Moreover, the system exhibits obviously larger electrical conductivity and Seebeck coefficients for the hole carriers. Consequently, theZTvalue ofp-type C3N can reach 1.4 at 1200 K when a constant relaxation time is predicted by the simple deformation potential theory. However, such a largerZTis reduced to 0.6 if we fully consider the electron-phonon coupling. Even so, the thermoelectric performance of monolayer C3N is still significantly enhanced compared with that of graphene, and is surprisingly good for low-dimensional thermoelectric materials consisting of very light elements.
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Affiliation(s)
- W Y Jiao
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - R Hu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - S H Han
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Y F Luo
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - H M Yuan
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - M K Li
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - H J Liu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
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15
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Vasdev A, Dutta M, Mishra S, Kaur V, Kaur H, Biswas K, Sheet G. Local ferroelectric polarization switching driven by nanoscale distortions in thermoelectric [Formula: see text]. Sci Rep 2021; 11:17190. [PMID: 34433850 PMCID: PMC8387443 DOI: 10.1038/s41598-021-96299-3] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/13/2021] [Accepted: 08/03/2021] [Indexed: 11/24/2022] Open
Abstract
A remarkable decrease in the lattice thermal conductivity and enhancement of thermoelectric figure of merit were recently observed in rock-salt cubic SnTe, when doped with germanium (Ge). Primarily, based on theoretical analysis, the decrease in lattice thermal conductivity was attributed to local ferroelectric fluctuations induced softening of the optical phonons which may strongly scatter the heat carrying acoustic phonons. Although the previous structural analysis indicated that the local ferroelectric transition temperature would be near room temperature in [Formula: see text], a direct evidence of local ferroelectricity remained elusive. Here we report a direct evidence of local nanoscale ferroelectric domains and their switching in [Formula: see text] using piezoeresponse force microscopy(PFM) and switching spectroscopy over a range of temperatures near the room temperature. From temperature dependent (250-300 K) synchrotron X-ray pair distribution function (PDF) analysis, we show the presence of local off-centering distortion of Ge along the rhombohedral direction in global cubic [Formula: see text]. The length scale of the [Formula: see text] off-centering is 0.25-0.10 Å near the room temperatures (250-300 K). This local emphatic behaviour of cation is the cause for the observed local ferroelectric instability, thereby low lattice thermal conductivity in [Formula: see text].
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Affiliation(s)
- Aastha Vasdev
- Department of Physical Sciences, Indian Institute of Science Education and Research Mohali, Sector 81, S. A. S. Nagar, Manauli, PO 140306, Mohali, Punjab India
| | - Moinak Dutta
- New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bengaluru, Karnataka India
| | - Shivam Mishra
- Department of Physical Sciences, Indian Institute of Science Education and Research Mohali, Sector 81, S. A. S. Nagar, Manauli, PO 140306, Mohali, Punjab India
| | - Veerpal Kaur
- Department of Physical Sciences, Indian Institute of Science Education and Research Mohali, Sector 81, S. A. S. Nagar, Manauli, PO 140306, Mohali, Punjab India
| | - Harleen Kaur
- Department of Physical Sciences, Indian Institute of Science Education and Research Mohali, Sector 81, S. A. S. Nagar, Manauli, PO 140306, Mohali, Punjab India
| | - Kanishka Biswas
- New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bengaluru, Karnataka India
| | - Goutam Sheet
- Department of Physical Sciences, Indian Institute of Science Education and Research Mohali, Sector 81, S. A. S. Nagar, Manauli, PO 140306, Mohali, Punjab India
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16
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Yang Q, Lyu T, Dong Y, Nan B, Tie J, Zhou X, Zhang B, Xu G. Anion exchanged Cl doping achieving band sharpening and low lattice thermal conductivity for improving thermoelectric performance in SnTe. Inorg Chem Front 2021. [DOI: 10.1039/d1qi00727k] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/24/2022]
Abstract
Cl doping achieves band sharpening as a potential strategy for improving the power factor in SnTe thermoelectrics.
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Affiliation(s)
- Quanxin Yang
- Beijing Municipal Key Lab of Advanced Energy Materials and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Tu Lyu
- Beijing Municipal Key Lab of Advanced Energy Materials and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Yuan Dong
- Beijing Municipal Key Lab of Advanced Energy Materials and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Bohang Nan
- Beijing Municipal Key Lab of Advanced Energy Materials and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Jian Tie
- Beijing Municipal Key Lab of Advanced Energy Materials and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Xiaojing Zhou
- Beijing Municipal Key Lab of Advanced Energy Materials and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
- Micro-nano Fabrication Technology Department, Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China
| | - Bin Zhang
- Beijing Municipal Key Lab of Advanced Energy Materials and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Guiying Xu
- Beijing Municipal Key Lab of Advanced Energy Materials and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
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