Recent Progress in Organic Phototransistors: Semiconductor Materials, Device Structures and Optoelectronic Applications

Stepwise Aggregation Control of PEDOT:PSS Enabled High-Conductivity, High-Resolution Printing of Polymer Electrodes for Transparent Organic Phototransistors

Electrohydrodynamic (EHD) jet printing is a widely employed technology to create high-resolution patterns and thus has enormous potential for circuit production. However, achieving both high conductivity and high resolution in printed polymer electrodes is a challenging task. Here, by modulating the aggregation state of the conducting polymer in the solution and solid phases, a stable and continuous jetting of PEDOT:PSS is realized, and high-conductivity electrode arrays are prepared. The line width reaches less than 5 μm with a record-high conductivity of 1250 S/cm. Organic field-effect transistors (OFETs) are further developed by combining printed source/drain electrodes with ultrathin organic semiconductor crystals. These OFETs show great light sensitivity, with a specific detectivity (D*) value of 2.86 × 1014 Jones. In addition, a proof-of-concept fully transparent phototransistor is demonstrated, which opens up new pathways to multidimensional optical imaging.

Dual Optoelectronic Organic Field-Effect Device: Combination of Electroluminescence and Photosensitivity

Merging the functionality of an organic field-effect transistor (OFET) with either a light emission or a photoelectric effect can increase the efficiency of displays or photosensing devices. In this work, we show that an organic semiconductor enables a multifunctional OFET combining electroluminescence (EL) and a photoelectric effect. Specifically, our computational and experimental investigations of a six-ring thiophene-phenylene co-oligomer (TPCO) revealed that this material is promising for OFETs, light-emitting, and photoelectric devices because of the large oscillator strength of the lowest-energy singlet transition, efficient luminescence, pronounced delocalization of the excited state, and balanced charge transport. The fabricated OFETs showed a photoelectric response for wavelengths shorter than 530 nm and simultaneously EL in the transistor channel, with a maximum at ~570 nm. The devices demonstrated an EL external quantum efficiency (EQE) of ~1.4% and a photoelectric responsivity of ~0.7 A W-1, which are among the best values reported for state-of-the-art organic light-emitting transistors and phototransistors, respectively. We anticipate that our results will stimulate the design of efficient materials for multifunctional organic optoelectronic devices and expand the potential applications of organic (opto)electronics.

Overcoming the Unfavorable Effects of "Boltzmann Tyranny:" Ultra-Low Subthreshold Swing in Organic Phototransistors via One-Transistor-One-Memristor Architecture

Organic phototransistors (OPTs), as photosensitive organic field-effect transistors (OFETs), have gained significant attention due to their pivotal roles in imaging, optical communication, and night vision. However, their performance is fundamentally limited by the Boltzmann distribution of charge carriers, which constrains the average subthreshold swing (SSave ) to a minimum of 60 mV/decade at room temperature. In this study, an innovative one-transistor-one-memristor (1T1R) architecture is proposed to overcome the Boltzmann limit in conventional OFETs. By replacing the source electrode in an OFET with a memristor, the 1T1R device exploits the memristor's sharp resistance state transitions to achieve an ultra-low SSave of 18 mV/decade. Consequently, the 1T1R devices demonstrate remarkable sensitivity to photo illumination, with a high specific detectivity of 3.9 × 109  cm W-1 Hz1/2 , outperforming conventional OPTs (4.9 × 104  cm W-1 Hz1/2 ) by more than four orders of magnitude. The 1T1R architecture presents a potentially universal solution for overcoming the detrimental effects of "Boltzmann tyranny," setting the stage for the development of ultra-low SSave devices in various optoelectronic applications.

Design and optimization of a multidirectional photodetector in optoelectronic integration

We have introduced and demonstrated a three-dimensional, multidirectional photodetector (PD) made of germanium for optoelectronic integration (OEI) systems. Building upon the fundamental physical principles of PDs, we focused on the design aspects of structure, dimensions, and doping. This led to the development of an integrated chip-level PD capable of discerning light from four different directions. Simulation verification confirmed that the key performance parameters of the four equivalent PDs meet the specified requirements. Importantly, we have identified the device's ability and strategy to evaluate light signals from different directions, as well as the impact of fluctuations in light intensity on the accuracy of the judgments. In-depth investigations into the effects of external bias, doping concentration, and doping region have been conducted to further optimize parameters, enhancing the performance of the proposed device. Overall, the current work will help improve the efficiency of PD and enhance the integration of future OEI chips.

Influence of chemical interactions on the electronic properties of BiOI/organic semiconductor heterojunctions for application in solution-processed electronics

Bismuth oxide iodide (BiOI) has been viewed as a suitable environmentally-friendly alternative to lead-halide perovskites for low-cost (opto-)electronic applications such as photodetectors, phototransistors and sensors. To enable its incorporation in these devices in a convenient, scalable, and economical way, BiOI thin films were investigated as part of heterojunctions with various p-type organic semiconductors (OSCs) and tested in a field-effect transistor (FET) configuration. The hybrid heterojunctions, which combine the respective functionalities of BiOI and the OSCs were processed from solution under ambient atmosphere. The characteristics of each of these hybrid systems were correlated with the physical and chemical properties of the respective materials using a concept based on heteropolar chemical interactions at the interface. Systems suitable for application in lateral transport devices were identified and it was demonstrated how materials in the hybrids interact to provide improved and synergistic properties. These indentified heterojunction FETs are a first instance of successful incorporation of solution-processed BiOI thin films in a three-terminal device. They show a significant threshold voltage shift and retained carrier mobility compared to pristine OSC devices and open up possibilities for future optoelectronic applications.

Organic Phototransistor with Light-Induced Contact Modulation and Sensitivity Enhancement Using a C60/C70:TAPC Hybrid Channel

Organic phototransistors (OPTs) are attracting a significant degree of interest as devices that have the potential to play multiple roles, including light sensing, signal amplification, and switching for addressing when they are used for matrix arrays. However, it has been challenging to realize OPTs that can perform all of these roles simultaneously at a sufficient performance level because the channel materials with high carrier mobility often exhibit relatively low photoabsorption. In this work, we propose OPTs with a hybrid bilayer channel consisting of a neat C60 layer and a bulk-heterojunction layer of C70 and 1,1-bis(4-bis(4-methyl-phenyl)-amino-phenyl)-cyclohexane (TAPC) as a possible solution to this issue. While the C60 layer serves as the main carrier-transporting layer with high mobility, the C70:TAPC layer operates as a photoactive layer wherein the photogenerated carriers provide photoinduced contact modulation that leads to a significant enhancement in photosensitivity. With the optimal design maximizing the absorption, the proposed hybrid-channel OPTs show a responsivity of ca. 180 A/W, which is 4.5 times higher than that of the control OPT with a C70:TAPC single channel. The operation mechanism and the origin for the improvement are verified by an in-depth analysis of the photoinduced modulation of the channel and contact resistances of the OPTs.

Retina-inspired organic neuromorphic vision sensor with polarity modulation for decoding light information

The neuromorphic vision sensor (NeuVS), which is based on organic field-effect transistors (OFETs), uses polar functional groups (PFGs) in polymer dielectrics as interfacial units to control charge carriers. However, the mechanism of modulating charge transport on basis of PFGs in devices is unclear. Here, the carboxyl group is introduced into polymer dielectrics in this study, and it can induce the charge transfer process at the semiconductor/dielectric interfaces for effective carrier transport, giving rise to the best device mobility up to 20 cm2 V-1 s-1 at a low operating voltage of -1 V. Furthermore, the polarity modulation effect could further increase the optical figures of merit in NeuVS devices by at least an order of magnitude more than the devices using carboxyl group-free polymer dielectrics. Additionally, devices containing carboxyl groups improved image sensing for light information decoding with 52 grayscale signals and memory capabilities at an incredibly low power consumption of 1.25 fJ/spike. Our findings provide insight into the production of high-performance polymer dielectrics for NeuVS devices.

Inorganic novel cubic halide perovskite Sr3AsI3: Strain-activated electronic and optical properties

In recent years, inorganic perovskite materials have attracted a lot of attention in the field of solar technology due to their exceptional structural, optical, and electronic properties. This study thoroughly investigated, using first-principles density-functional theory (FP-DFT), the impact of compressive and tensile strain on the structural, optical, and electrical properties of the inorganic cubic perovskite Sr3AsI3. The unstrained planar Sr3AsI3 molecule exhibits a direct bandgap of 1.265 eV value at Γ point. The bandgap of the Sr3AsI3 perovskite is lowered to 1.212 eV when the relativistic spin-orbital coupling (SOC) effect is subjected in the observations. In addition, the structure's bandgap exhibits a falling prevalence due to compressive strain and a slight rise due to tensile strain. The optical indicators such as dielectric functions, absorption coefficient, reflectivity, and electron loss function show that this component has a great ability to absorb in the visible range in accordance with band characteristics. When compressive strain is raised, it is discovered that the spikes of the dielectric constant of Sr3AsI3 move to lower photon energy (redshift), and conversely, while growing tensile strain, it exhibits increased photon energy changing behavior (blueshift). As a result, the Sr3AsI3 perovskite is regarded as being ideal for use in solar cells for the production of electricity and light management.

Enhancing the Performance of Organic Phototransistors Based on Oriented Floating Films of P3HT Assisted by Al-Island Deposition

The fabrication of high-performance Organic Phototransistors (OPTs) by depositing Al-islands atop Poly(3-hexylthiophene) (P3HT) thin film coated using the unidirectional floating-film transfer method (UFTM) has been realized. Further, the effect of Al-island thickness on the OPTs' performance has been intensively investigated using X-ray photoelectron spectroscopy, X-ray Diffraction, Atomic force microscopy and UV-Vis spectroscopy analysis. Under the optimized conditions, OPTs' mobility and on-off ratio were found to be 2 × 10-2 cm2 V-1 s-1 and 3 × 104, respectively. Further, the device exhibited high photosensitivity of 105, responsivity of 339 A/W, detectivity of 3 × 1014 Jones, and external quantum efficiency of 7.8 × 103% when illuminated with a 525 nm LED laser (0.3 mW/cm2).

Nanographene-Based Heterojunctions for High-Performance Organic Phototransistor Memory Devices

Organic phototransistors can enable many important applications such as nonvolatile memory, artificial synapses, and photodetectors in next-generation optical communication and wearable electronics. However, it is still a challenge to achieve a big memory window (threshold voltage response ∆V_th ) for phototransistors. Here, a nanographene-based heterojunction phototransistor memory with large ∆V_th responses is reported. Exposure to low intensity light (25.7 µW cm^-2 ) for 1 s yields a memory window of 35 V, and the threshold voltage shift is found to be larger than 140 V under continuous light illumination. The device exhibits both good photosensitivity (3.6 × 10⁵ ) and memory properties including long retention time (>1.5 × 10⁵  s), large hysteresis (45.35 V), and high endurance for voltage-erasing and light-programming. These findings demonstrate the high application potential of nanographenes in the field of optoelectronics. In addition, the working principle of these hybrid nanographene-organic structured heterojunction phototransistor memory devices is described which provides new insight into the design of high-performance organic phototransistor devices.

Wearable Electronics Based on Stretchable Organic Semiconductors

Wearable electronics are attracting increasing interest due to the emerging Internet of Things (IoT). Compared to their inorganic counterparts, stretchable organic semiconductors (SOSs) are promising candidates for wearable electronics due to their excellent properties, including light weight, stretchability, dissolubility, compatibility with flexible substrates, easy tuning of electrical properties, low cost, and low temperature solution processability for large-area printing. Considerable efforts have been dedicated to the fabrication of SOS-based wearable electronics and their potential applications in various areas, including chemical sensors, organic light emitting diodes (OLEDs), organic photodiodes (OPDs), and organic photovoltaics (OPVs), have been demonstrated. In this review, some recent advances of SOS-based wearable electronics based on the classification by device functionality and potential applications are presented. In addition, a conclusion and potential challenges for further development of SOS-based wearable electronics are also discussed.

A new dithieno[3,2-b:2',3'-d]thiophene derivative for high performance single crystal organic field-effect transistors and UV-sensitive phototransistors

Organic phototransistors (OPTs), as the basic unit for organic image sensors, are emerging as one of the most promising light signal detectors. High performance UV-sensitive phototransistors are highly desired for the detection of UV light. Herein, by introducing the anthracene group to the 2,6-positions of dithieno[3,2-b:2',3'-d]thiophene, we designed and synthesized a new dithieno[3,2-b:2',3'-d]thiophene derivative, 2,6-di(anthracen-2-yl)dithieno[3,2-b:2',3'-d]thiophene (2,6-DADTT). The single crystal structure of 2,6-DADTT presents classical herringbone packing with multiple intermolecular interactions, including S⋯S (3.470 Å), S⋯C (3.304 Å, 3.391 Å, 3.394 Å) and C-H⋯π (2.763 Å, 2.822 Å, 2.846 Å, 2.865 Å, 2.885 Å, 2.890 Å) contacts. Single crystal organic field-effect transistors (SC-OFETs) based on 2,6-DADTT reach a highest mobility of 1.26 cm2 V-1 s-1 and an average mobility of 0.706 cm2 V-1 s-1. 2,6-DADTT-based single crystal organic phototransistors (OPTs) demonstrate photosensitivity (P) of 2.49 × 106, photoresponsivity (R) of 6.84 × 103 A W-1 and ultrahigh detectivity (D*) of 4.70 × 1016 Jones to UV light, which are among the best figures of merit for UV-sensitive OPTs. These excellent comprehensive performances indicate its good application prospects in integrated optoelectronics.

Ultra-Narrowband Near-Infrared Responsive J-Aggregates of Fused Quinoidal Tetracyanoindacenodithiophene

Narrowband photoresponsive molecules are highly coveted in high-resolution imaging, sensing, and monochromatic photodetection, especially those extending into the near-infrared (NIR) spectral range. Here, a new class of J-aggregating materials based on quinoidal indacenodithiophenes (IDTs) that exhibit an ultra-narrowband (full width half maxima of 22 nm) NIR absorption peak centered at 770 nm is reported. The spectral width is readily tuned by the length of the solubilizing alkyl group, with longer chains resulting in significant spectral narrowing. The J-aggregate behavior is confirmed by a combination of excited state lifetime measurements and single-crystal X-ray diffraction measurements. Their utility as electron-transporting materials is demonstrated in both transistor and phototransistor devices, with the latter demonstrating good response at NIR wavelengths (780 nm) over a range of intensities.

Organic Supercapacitors as the Next Generation Energy Storage Device: Emergence, Opportunity, and Challenges

Harnessing new materials for developing high-energy storage devices set off research in the field of organic supercapacitors. Various attractive properties like high energy density, lower device weight, excellent cycling stability, and impressive pseudocapacitive nature make organic supercapacitors suitable candidates for high-end storage device applications. This review highlights the overall progress and future of organic supercapacitors. Sustainable energy production and storage depend on low cost, large supercapacitor packs with high energy density. Organic supercapacitors with high pseudocapacitance, lightweight form factor, and higher device potential are alternatives to other energy storage devices. There are many recent ongoing research works that focus on organic electrolytes along with the material aspect of organic supercapacitors. This review summarizes the current research status and the chemistry behind the storage mechanism in organic supercapacitors to overcome the challenges and achieve superior performance for future opportunities.

Best practices in the measurement of circularly polarised photodetectors

Circularly polarised light will revolutionise emerging technologies, including encrypted light-based communications, quantum computing, bioimaging and multi-channel data processing. In order to make use of these remarkable opportunities, high performance photodetectors that can accurately differentiate between left- and right-handed circularly polarised light are desperately needed. Whilst this potential has resulted in considerable research interest in chiral materials and circularly polarised photodetecting devices, their translation into real-world technologies is limited by non-standardised reporting and testing protocols. This mini-review provides an accessible introduction into the working principles of circularly polarised photodetectors and a comprehensive overview of the performance metrics of state-of-the-art devices. We propose a rigorous device characterisation procedure that will allow for standardised evaluation of novel devices, which we hope will accelerate research and investment in this area.

Mixed Ionic-Electronic Conduction, a Multifunctional Property in Organic Conductors

Organic mixed ionic-electronic conductors (OMIECs) have gained recent interest and rapid development due to their versatility in diverse applications ranging from sensing, actuation and computation to energy harvesting/storage, and information transfer. Their multifunctional properties arise from their ability to simultaneously participate in redox reactions as well as modulation of ionic and electronic charge density throughout the bulk of the material. Most importantly, the ability to access charge states with deep modulation through a large extent of its density of states and physical volume of the material enables OMIEC-based devices to display exciting new characteristics and opens up new degrees of freedom in device design. Leveraging the infinite possibilities of the organic synthetic toolbox, this perspective highlights several chemical and structural design approaches to modify OMIECs' properties important in device applications such as electronic and ionic conductivity, color, modulus, etc. Additionally, the ability for OMIECs to respond to external stimuli and transduce signals to myriad types of outputs has accelerated their development in smart systems. This perspective further illustrates how various stimuli such as electrical, chemical, and optical inputs fundamentally change OMIECs' properties dynamically and how these changes can be utilized in device applications.

A Review on Solution-Processed Organic Phototransistors and Their Recent Developments

Today, more disciplines are intercepting each other, giving rise to “cross-disciplinary” research. Technological advancements in material science and device structure and production have paved the way towards development of new classes of multi-purpose sensory devices. Organic phototransistors (OPTs) are photo-activated sensors based on organic field-effect transistors that convert incident light signals into electrical signals. The organic semiconductor (OSC) layer and three-electrode structure of an OPT offer great advantages for light detection compared to conventional photodetectors and photodiodes, due to their signal amplification and noise reduction characteristics. Solution processing of the active layer enables mass production of OPT devices at significantly reduced cost. The chemical structure of OSCs can be modified accordingly to fulfil detection at various wavelengths for different purposes. Organic phototransistors have attracted substantial interest in a variety of fields, namely biomedical, medical diagnostics, healthcare, energy, security, and environmental monitoring. Lightweight and mechanically flexible and wearable OPTs are suitable alternatives not only at clinical levels but also for point-of-care and home-assisted usage. In this review, we aim to explain different types, working mechanism and figures of merit of organic phototransistors and highlight the recent advances from the literature on development and implementation of OPTs for a broad range of research and real-life applications.

Ultrahigh-Performance Optoelectronic Skin Based on Intrinsically Stretchable Perovskite-Polymer Heterojunction Transistors

The optoelectronic skin is acknowledged as the world's current cutting-edge technology in the fields of wearable healthcare monitoring, soft robotics, artificial retinas, and so on. However, the difficulty in preparing stretchable photosensitive polymers and the high-crystallization nature of most reported photosensitive materials (such as perovskites) severely restrict the development of skin-like optoelectronic devices. Herein, a surface energy-induced self-assembly methodology is proposed to form easily transferrable and flexible perovskite quantum dot (PQD) films with a worm-like morphology. Furthermore, intrinsically stretchable phototransistors (ISTPTs) are fabricated based on a stretchable photosensitive layer heterojunction consisting of worm-like PQD films and hybrid polymer semiconductors. The obtained ISTPTs display highly sensitive response to high-energy photons of X-ray (with a detection limit of 79 nGy s^-1 , that is 560 times lower than commercial medical chest X-ray diagnosis) and ultraviolet (with photosensitivity of 5 × 10⁶ and detectable light intensity of 50 nW cm^-2 among the highest performance of reported photodetectors). In addition, these ISTPTs demonstrate desirable e-skin characteristics with high strain tolerance, high sensing specificity, high optical transparency, and good skin conformability. The surface energy-induced self-assembly methodology for the preparation of ISTPTs is a critical demonstration to enable low-cost and high-performance optoelectronic skins.

Organic Single Crystals with High Photoluminescence Quantum Yields Close to 100% and High Mobility for Optoelectronic Devices

Organic single crystals with excellent optical and electrical properties are critical for the development of organic optoelectronics. Herein, two compounds 9,10-bis([N,N-diphenyl]-4'-phenylethynyl)anthracene (TPA-An) and 9,10-bis([1',3'-diphenyl]-5'-phenylethynyl)anthracene (TBA-An) are synthesized by introducing two different luminescent groups, triphenylamine and 1,3-diphenylbenzene, at the 9,10 positions of anthracene via triple bond connection. Single crystals based on TPA-An and TBA-An with a ribbon morphology obtained through the slow solvent-evaporation method exhibit high photoluminescence quantum yields (PLQYs) of 98% and 99% at room temperature, and remarkable hole mobilities of 0.45 and 0.15 cm² V^-1 s^-1 in single-crystal organic field-effect transistors (SC-OFETs). Furthermore, UV phototransistors based on the two single crystals obtain photosensitivities of 1.03 × 10³ and 3.45 × 10⁴ , ultrahigh photoresponsivities of 7.19 × 10⁵ and 1.50 × 10⁵ A W^-1 , and the detectivities exceeding 1.40 × 10¹⁶ and 1.60 × 10¹⁷ Jones.

High performance near-infrared phototransistors via enhanced electron trapping effect

A high performance near-infrared organic phototransistor is achieved via introducing a small molecule acceptor as an electron trapping site into the narrow-bandgap conjugated polymer films. With only 10% (wt) addition of the acceptor molecule, the photoresponse to light of 850 nm has been significantly improved with a best photoresponsivity up to 2000 A W^-1, high detectivity of 10¹⁶ Jones and fairly good photosensitivity in the order of 10⁶.

Design, synthesis, structure, and photophysical features of highly emissive cinnamic derivatives

New cinnamic derivatives 1a–c were designed starting from the chromophores working in polybenzofulvene derivatives poly-6-DMFL-BF3k, poly-6-MCBZ-BF3k, and poly-6-TPA-BF3k endowed with outstanding optoelectronic performances.