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Dou Z, Sun J, Fang Q. A Facile One-Step Conversion of Biobased Magnolol (Honokiol) toward High Refractive Materials. Biomacromolecules 2024; 25:6155-6163. [PMID: 39110195 DOI: 10.1021/acs.biomac.4c00856] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/10/2024]
Abstract
A series of polymers with both high refractive index and high Abbe number have been successfully synthesized through the photoclick thiol-ene reaction between the monomers derived from biobased magnolol (or honokiol) and commercial mercaptans and thiophenols. The polymer films not only exhibit a high refractive index and a high Abbe number but also display a transmittance of up to 90% in a range of wavelengths from 550 to 2000 nm and nearly 0% in the UV region. Moreover, these polymers also display low haze values in the visible-light region as well as exhibit good thermostability. These data indicate that they have potential applications for the fabrication of optical lenses and anti-UV coatings. In particular, this series of polymers are readily used for industrialization due to its excellent optical properties but low expense, simplicity, and efficiency of synthesis.
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Affiliation(s)
- Zongao Dou
- Key Laboratory of Fluorine and Nitrogen Chemistry and Advanced Materials, Center for Excellence in Molecular Synthesis, Shanghai Institute of Organic Chemistry, University of Chinese Academy of Sciences, Chinese Academy of Sciences, 345 Lingling Road, Shanghai 200032, P. R. China
| | - Jing Sun
- Key Laboratory of Fluorine and Nitrogen Chemistry and Advanced Materials, Center for Excellence in Molecular Synthesis, Shanghai Institute of Organic Chemistry, University of Chinese Academy of Sciences, Chinese Academy of Sciences, 345 Lingling Road, Shanghai 200032, P. R. China
| | - Qiang Fang
- Key Laboratory of Fluorine and Nitrogen Chemistry and Advanced Materials, Center for Excellence in Molecular Synthesis, Shanghai Institute of Organic Chemistry, University of Chinese Academy of Sciences, Chinese Academy of Sciences, 345 Lingling Road, Shanghai 200032, P. R. China
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2
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Nawaz A, Merces L, Ferro LMM, Sonar P, Bufon CCB. Impact of Planar and Vertical Organic Field-Effect Transistors on Flexible Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2204804. [PMID: 36124375 DOI: 10.1002/adma.202204804] [Citation(s) in RCA: 17] [Impact Index Per Article: 17.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/27/2022] [Revised: 09/13/2022] [Indexed: 06/15/2023]
Abstract
The development of flexible and conformable devices, whose performance can be maintained while being continuously deformed, provides a significant step toward the realization of next-generation wearable and e-textile applications. Organic field-effect transistors (OFETs) are particularly interesting for flexible and lightweight products, because of their low-temperature solution processability, and the mechanical flexibility of organic materials that endows OFETs the natural compatibility with plastic and biodegradable substrates. Here, an in-depth review of two competing flexible OFET technologies, planar and vertical OFETs (POFETs and VOFETs, respectively) is provided. The electrical, mechanical, and physical properties of POFETs and VOFETs are critically discussed, with a focus on four pivotal applications (integrated logic circuits, light-emitting devices, memories, and sensors). It is pointed out that the flexible function of the relatively newer VOFET technology, along with its perspective on advancing the applicability of flexible POFETs, has not been reviewed so far, and the direct comparison regarding the performance of POFET- and VOFET-based flexible applications is most likely absent. With discussions spanning printed and wearable electronics, materials science, biotechnology, and environmental monitoring, this contribution is a clear stimulus to researchers working in these fields to engage toward the plentiful possibilities that POFETs and VOFETs offer to flexible electronics.
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Affiliation(s)
- Ali Nawaz
- Center for Sensors and Devices, Bruno Kessler Foundation (FBK), Trento, 38123, Italy
| | - Leandro Merces
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, São Paulo, 13083-100, Brazil
| | - Letícia M M Ferro
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, São Paulo, 13083-100, Brazil
- Institute of Chemistry, University of Campinas, Campinas, São Paulo, 13083-970, Brazil
| | - Prashant Sonar
- School of Chemistry and Physics, Queensland University of Technology (QUT), Brisbane, QLD, 4000, Australia
- Centre for Materials Science, Queensland University of Technology, 2 George Street, Brisbane, QLD, 4000, Australia
| | - Carlos C B Bufon
- MackGraphe - Graphene and Nanomaterials Research Center, Mackenzie Presbyterian Institute, São Paulo, 01302-907, Brazil
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3
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Tung WY, Pu C, Huang YF, Xie W, Cheng CF, Lai YY, Li X, Lin HY, Lai YT, Chen K, Wang CL, Zhu Y. Benzimidazolone-Dioxazine Pigments-Based Conjugated Polymers for Organic Field-Effect Transistor. Macromol Rapid Commun 2023; 44:e2200297. [PMID: 35621302 DOI: 10.1002/marc.202200297] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/30/2022] [Revised: 05/14/2022] [Indexed: 01/11/2023]
Abstract
Molecules based on benzimidazolone-dioxazine are known as blue/violet pigments and have been commercialized for decades. However, unfavorable solubility limits the application of these structures as building blocks of conjugated polymers despite their low band gaps. Herein, a series of donor-acceptor conjugated polymers containing soluble benzimidazolone-dioxazine structures as the acceptors and oligothiophene as donors are synthesized and investigated. With increasing numbers of thiophene rings, the steric hindrance diminishes and high molecular weight polymers can be achieved, leading to an improved performance in organic field effect transistor devices. The hole mobility of polymers with three to six thiophene units is in the order of 10-1 cm2 V-1 s -1 . Among all the polymers, polymer P3 with three thiophene units between benzimidazolone-dioxazine structures shows the best hole mobility of 0.4 cm2 V-1 s -1 . Grazing-incidence wide-angle X-ray scattering results reveal that the high mobility of organic field-effect transistors (OFETs) can be accredited by matched donor-acceptor packing in the solid thin films.
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Affiliation(s)
- Wei-Yao Tung
- School of Polymer Science and Polymer Engineering, University of Akron, Akron, OH, 44325, USA
| | - Cheng Pu
- School of Polymer Science and Polymer Engineering, University of Akron, Akron, OH, 44325, USA
| | - Yi-Fan Huang
- Department of Applied Chemistry, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Wei Xie
- School of Polymer Science and Polymer Engineering, University of Akron, Akron, OH, 44325, USA
| | - Chung-Fu Cheng
- School of Polymer Science and Polymer Engineering, University of Akron, Akron, OH, 44325, USA
| | - Yun-Yu Lai
- School of Polymer Science and Polymer Engineering, University of Akron, Akron, OH, 44325, USA
| | - Xiang Li
- School of Polymer Science and Polymer Engineering, University of Akron, Akron, OH, 44325, USA
| | - Heng-Yi Lin
- Department of Applied Chemistry, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Yueh-Ting Lai
- School of Polymer Science and Polymer Engineering, University of Akron, Akron, OH, 44325, USA
| | - Kun Chen
- School of Polymer Science and Polymer Engineering, University of Akron, Akron, OH, 44325, USA
| | - Chien-Lung Wang
- Department of Applied Chemistry, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Yu Zhu
- School of Polymer Science and Polymer Engineering, University of Akron, Akron, OH, 44325, USA
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4
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Lee S, Kim S, Yoo H. Contribution of Polymers to Electronic Memory Devices and Applications. Polymers (Basel) 2021; 13:3774. [PMID: 34771332 PMCID: PMC8588209 DOI: 10.3390/polym13213774] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/14/2021] [Revised: 10/26/2021] [Accepted: 10/29/2021] [Indexed: 11/23/2022] Open
Abstract
Electronic memory devices, such as memristors, charge trap memory, and floating-gate memory, have been developed over the last decade. The use of polymers in electronic memory devices enables new opportunities, including easy-to-fabricate processes, mechanical flexibility, and neuromorphic applications. This review revisits recent efforts on polymer-based electronic memory developments. The versatile contributions of polymers for emerging memory devices are classified, providing a timely overview of such unconventional functionalities with a strong emphasis on the merits of polymer utilization. Furthermore, this review discusses the opportunities and challenges of polymer-based memory devices with respect to their device performance and stability for practical applications.
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Affiliation(s)
| | | | - Hocheon Yoo
- Department of Electronic Engineering, Gachon University, Seongnam 1342, Korea; (S.L.); (S.K.)
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5
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Xu T, Guo S, Qi W, Li S, Xu M, Wang W. Organic Transistor Nonvolatile Memory with Three-Level Information Storage and Optical Detection Functions. ACS APPLIED MATERIALS & INTERFACES 2020; 12:21952-21960. [PMID: 32319288 DOI: 10.1021/acsami.0c01162] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
By the current processing technology, it is a challenge to obtain ultrahigh-density information storage in the conventional binary floating-gate-based organic field-effect transistor (FG-OFET) nonvolatile memories (NVMs). To develop a multilevel memory in one cell is a feasible solution. In this work, we demonstrate FG-OFET NVMs with an integrated polymer floating-gate/tunneling (I-FG/T) layer consisting of poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) and polystyrene. The photoelectric effect of organic/polymer semiconductors is used to improve the controllability of the polarity and the number of the charges stored in the floating-gate. The FG-OFET NVMs integrate light sensitivity and nonvolatile information storage functions. By selecting suitable optical and electrical programming/erasing conditions, three-level information storage states, corresponding to electron storage, approximate neutrality, and hole storage in the floating-gate, are achieved and freely switched to each other. The memory mechanism and the dependence of the memory performances on the F8BT contents in I-FG/T layers are investigated. As a result, good memory performances, with mobility larger than 1.0 cm2 V-1 s-1, reliable three-level switching endurance over 100 cycles, and stable three-level retention capability over 20 000 s, are achieved in our memory. Furthermore, an imaging system with a nonvolatile information storage function is demonstrated in a 16 × 5 array of FG-OFET NVMs.
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Affiliation(s)
- Ting Xu
- College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
| | - Shuxu Guo
- College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
| | - Weihao Qi
- College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
| | - Shizhang Li
- College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
| | - Meili Xu
- College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
| | - Wei Wang
- College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
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6
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Chen H, Zhang W, Li M, He G, Guo X. Interface Engineering in Organic Field-Effect Transistors: Principles, Applications, and Perspectives. Chem Rev 2020; 120:2879-2949. [PMID: 32078296 DOI: 10.1021/acs.chemrev.9b00532] [Citation(s) in RCA: 99] [Impact Index Per Article: 24.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Heterogeneous interfaces that are ubiquitous in optoelectronic devices play a key role in the device performance and have led to the prosperity of today's microelectronics. Interface engineering provides an effective and promising approach to enhancing the device performance of organic field-effect transistors (OFETs) and even developing new functions. In fact, researchers from different disciplines have devoted considerable attention to this concept, which has started to evolve from simple improvement of the device performance to sophisticated construction of novel functionalities, indicating great potential for further applications in broad areas ranging from integrated circuits and energy conversion to catalysis and chemical/biological sensors. In this review article, we provide a timely and comprehensive overview of current efficient approaches developed for building various delicate functional interfaces in OFETs, including interfaces within the semiconductor layers, semiconductor/electrode interfaces, semiconductor/dielectric interfaces, and semiconductor/environment interfaces. We also highlight the major contributions and new concepts of integrating molecular functionalities into electrical circuits, which have been neglected in most previous reviews. This review will provide a fundamental understanding of the interplay between the molecular structure, assembly, and emergent functions at the molecular level and consequently offer novel insights into designing a new generation of multifunctional integrated circuits and sensors toward practical applications.
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Affiliation(s)
- Hongliang Chen
- Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
| | - Weining Zhang
- Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
| | - Mingliang Li
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
| | - Gen He
- Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
| | - Xuefeng Guo
- Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China.,Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China.,Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, P. R. China
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7
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Park Y, Baeg KJ, Kim C. Solution-Processed Nonvolatile Organic Transistor Memory Based on Semiconductor Blends. ACS APPLIED MATERIALS & INTERFACES 2019; 11:8327-8336. [PMID: 30707007 DOI: 10.1021/acsami.8b20571] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Solution-processed nonvolatile organic transistor memory devices are fabricated by employing semiconductor blends of p-channel 6,13-bis(triisopropylsilylethynyl)pentacene and n-channel poly{[ N, N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]- alt-5,5'-(2,2'-bithiophene)} (P(NDI2OD-2T); N2200) on polystyrene-brush as a polymer electret. Electret-based memory characteristics are significantly changed depending on the frontier molecular orbitals of the active semiconductors because the charge-trapping efficiency is mainly determined by the energy barrier to transfer electrons and holes from the active channel to the electret layer. A semiconductor mixture with an optimized blending ratio results in an efficient programming and erasing process. Thus, we obtained a remarkably high ratio of ON/OFF current (memory ratio) about 107 and a large amount of shifts in the threshold voltage (memory window) between the programmed and erased states of 55 V, while single-component N2200 showed only writing-once-read-many (WORM)-type memory. Especially, the programmed data can be stably retained more than 10 years with a sufficient memory ratio of 103. Furthermore, our semiconductor blend system leads to preferable vertical phase separation, which affords good reliability under a sequential memory operation condition as well as stability in ambient air. It is expected that our memory devices can be applied for versatile data storage in printed and flexible electronic applications.
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Affiliation(s)
- Yonghan Park
- Department of Chemical and Biomolecular Engineering , Sogang University , 35 Baekbeom-ro , Mapo-gu, Seoul 04107 , Republic of Korea
| | - Kang-Jun Baeg
- Department of Graphic Arts Information Engineering , Pukyong National University , 45 Yongso-ro , Nam-gu, Busan 48513 , Republic of Korea
| | - Choongik Kim
- Department of Chemical and Biomolecular Engineering , Sogang University , 35 Baekbeom-ro , Mapo-gu, Seoul 04107 , Republic of Korea
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8
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Yu Y, Bian L, Chen J, Ma Q, Li Y, Ling H, Feng Q, Xie L, Yi M, Huang W. 4,5-Diazafluorene-Based Donor-Acceptor Small Molecules as Charge Trapping Elements for Tunable Nonvolatile Organic Transistor Memory. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2018; 5:1800747. [PMID: 30581695 PMCID: PMC6299726 DOI: 10.1002/advs.201800747] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/14/2018] [Revised: 07/13/2018] [Indexed: 05/22/2023]
Abstract
Three diazafluorene derivatives triphenylamine (TPA)(PDAF) n (n = 1, 2, 3) serving as small molecular elements are designed and synthesized via concentrated sulfuric acid mediated Friedel-Crafts reaction. With highly nonplanar topological configuration, TPA(PDAF)3 shows weaker intermolecular interaction in the solid states and thus exhibits single nanomolecular behavior, which is crucial for charge stored and retained in an organic field-effect transistor (OFET) memory device. Furthermore, diazafluorene derivatives possess a completely separate highest occupied molecular orbital/lowest unoccupied molecular orbital, which offers ideal hole and electron trapping sites. As charge storage elements, triphenylamine groups provide the hole trapping sites, while diazafluorene units provide the electron trapping sites and act as a hole blocking group to restrain the leakage of stored holes trapped in triphenylamine. The pentacene-based OFET memory device with solution-processing TPA(PDAF)3 shows a good hole-trapping ability, high hole trapping density (4.55 × 1012 cm-2), fast trapping speed (<20 ms), a large memory window (89 V), and a tunable ambipolar memory behavior. The optimized device shows a large ON/OFF current ratio (2.85 × 107), good charge retention (>104 s), and reliable endurance properties. This study suggests that diazafluorene based donor-acceptor small molecular elements have great promise for high-performance OFET memory.
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Affiliation(s)
- Yang Yu
- Centre for Molecular Systems and Organic Devices (CMSOD)Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials (IAM)Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM)Nanjing University of Posts & Telecommunications9 Wenyuan RoadNanjing210023P. R. China
| | - Lin‐Yi Bian
- Centre for Molecular Systems and Organic Devices (CMSOD)Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials (IAM)Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM)Nanjing University of Posts & Telecommunications9 Wenyuan RoadNanjing210023P. R. China
| | - Jian‐Guo Chen
- Centre for Molecular Systems and Organic Devices (CMSOD)Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials (IAM)Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM)Nanjing University of Posts & Telecommunications9 Wenyuan RoadNanjing210023P. R. China
| | - Qi‐Hao Ma
- Centre for Molecular Systems and Organic Devices (CMSOD)Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials (IAM)Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM)Nanjing University of Posts & Telecommunications9 Wenyuan RoadNanjing210023P. R. China
| | - Yin‐Xiang Li
- Centre for Molecular Systems and Organic Devices (CMSOD)Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials (IAM)Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM)Nanjing University of Posts & Telecommunications9 Wenyuan RoadNanjing210023P. R. China
| | - Hai‐Feng Ling
- Centre for Molecular Systems and Organic Devices (CMSOD)Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials (IAM)Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM)Nanjing University of Posts & Telecommunications9 Wenyuan RoadNanjing210023P. R. China
| | - Quan‐You Feng
- Centre for Molecular Systems and Organic Devices (CMSOD)Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials (IAM)Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM)Nanjing University of Posts & Telecommunications9 Wenyuan RoadNanjing210023P. R. China
| | - Ling‐Hai Xie
- Centre for Molecular Systems and Organic Devices (CMSOD)Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials (IAM)Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM)Nanjing University of Posts & Telecommunications9 Wenyuan RoadNanjing210023P. R. China
| | - Ming‐Dong Yi
- Centre for Molecular Systems and Organic Devices (CMSOD)Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials (IAM)Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM)Nanjing University of Posts & Telecommunications9 Wenyuan RoadNanjing210023P. R. China
| | - Wei Huang
- Centre for Molecular Systems and Organic Devices (CMSOD)Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials (IAM)Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM)Nanjing University of Posts & Telecommunications9 Wenyuan RoadNanjing210023P. R. China
- Shaanxi Institute of Flexible Electronics (SIFE)Northwestern Polytechnical University (NPU)127 West Youyi RoadXi'an710072P. R. China
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9
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Fan H, Ji Y, Xu Q, Zhou F, Wu B, Wang L, Li Y, Lu J. Sulfur (VI) Fluoride Exchange Polymerization for Large Conjugate Chromophores and Functional Main-Chain Polysulfates with Nonvolatile Memory Performance. Chempluschem 2018; 83:407-413. [PMID: 31957370 DOI: 10.1002/cplu.201800067] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/07/2018] [Revised: 04/10/2018] [Indexed: 11/10/2022]
Abstract
Sulfur (VI) fluoride exchange (SuFEx) reactions can be applied not only in organic click synthesis, but also in the preparation of functional main-chain polymers. In this work, four functional main-chain polysulfates (PNT-PS, NPNT-PS, PHF-PS, and TPE-PS) are synthesized in high yield using the SuFEx reaction at room temperature. The polysulfates exhibit satisfactory thermal stability and solution processability. They are used as the active layer for memory devices (ITO/PNT-PS/Al, ITO/NPNT-PS/Al, ITO/PHF-PS/Al, and ITO/TPE-PS/Al). I-V measurements show that ITO/PNT-PS/Al and ITO/NPNT-PS/Al exhibit stable flash-memory (write-read-erase) behavior, while ITO/PHF-PS/Al and ITO/TPE-PS/Al exhibit WORM (write once read many) behavior. Our studies provide a feasible and efficient synthetic methodology for the preparation of new memory materials.
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Affiliation(s)
- Huiru Fan
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative, Innovation Center of Suzhou Nano Science and Technology, Soochow University, 199 Ren'ai Road, Suzhou, 215123, China
| | - Yujin Ji
- Functional Nano, Soft Materials Laboratory (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, 215123, China
| | - Qingfeng Xu
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative, Innovation Center of Suzhou Nano Science and Technology, Soochow University, 199 Ren'ai Road, Suzhou, 215123, China
| | - Feng Zhou
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative, Innovation Center of Suzhou Nano Science and Technology, Soochow University, 199 Ren'ai Road, Suzhou, 215123, China
| | - Bin Wu
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative, Innovation Center of Suzhou Nano Science and Technology, Soochow University, 199 Ren'ai Road, Suzhou, 215123, China
| | - Lihua Wang
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative, Innovation Center of Suzhou Nano Science and Technology, Soochow University, 199 Ren'ai Road, Suzhou, 215123, China
| | - Youyong Li
- Functional Nano, Soft Materials Laboratory (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, 215123, China
| | - Jianmei Lu
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative, Innovation Center of Suzhou Nano Science and Technology, Soochow University, 199 Ren'ai Road, Suzhou, 215123, China
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10
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Zhou L, Mao J, Ren Y, Han ST, Roy VAL, Zhou Y. Recent Advances of Flexible Data Storage Devices Based on Organic Nanoscaled Materials. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14:1703126. [PMID: 29377568 DOI: 10.1002/smll.201703126] [Citation(s) in RCA: 47] [Impact Index Per Article: 7.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/10/2017] [Revised: 11/04/2017] [Indexed: 06/07/2023]
Abstract
Following the trend of miniaturization as per Moore's law, and facing the strong demand of next-generation electronic devices that should be highly portable, wearable, transplantable, and lightweight, growing endeavors have been made to develop novel flexible data storage devices possessing nonvolatile ability, high-density storage, high-switching speed, and reliable endurance properties. Nonvolatile organic data storage devices including memory devices on the basis of floating-gate, charge-trapping, and ferroelectric architectures, as well as organic resistive memory are believed to be favorable candidates for future data storage applications. In this Review, typical information on device structure, memory characteristics, device operation mechanisms, mechanical properties, challenges, and recent progress of the above categories of flexible data storage devices based on organic nanoscaled materials is summarized.
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Affiliation(s)
- Li Zhou
- College of Electronic Science and Technology, Shenzhen University, Shenzhen, 518060, P. R. China
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Jingyu Mao
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yi Ren
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Su-Ting Han
- College of Electronic Science and Technology, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Vellaisamy A L Roy
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
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11
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Wang Q, Zhang J, Yu Y, Dan Y, Jiang L. 4,4′,4′′-Triaminotriphenylamine-based porous polyimide as a visible-light-driven photocatalyst. NEW J CHEM 2018. [DOI: 10.1039/c8nj02173b] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
A novel polyimide photocatalyst was fabricated by a low-temperature condensation method and its photocatalytic mechanism was discussed.
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Affiliation(s)
- Qin Wang
- State Key Laboratory of Polymer Materials Engineering of China (Sichuan University)
- Polymer Research Institute of Sichuan University
- Chengdu 610065
- China
| | - Jianling Zhang
- State Key Laboratory of Polymer Materials Engineering of China (Sichuan University)
- Polymer Research Institute of Sichuan University
- Chengdu 610065
- China
| | - Yuyan Yu
- State Key Laboratory of Polymer Materials Engineering of China (Sichuan University)
- Polymer Research Institute of Sichuan University
- Chengdu 610065
- China
| | - Yi Dan
- State Key Laboratory of Polymer Materials Engineering of China (Sichuan University)
- Polymer Research Institute of Sichuan University
- Chengdu 610065
- China
| | - Long Jiang
- State Key Laboratory of Polymer Materials Engineering of China (Sichuan University)
- Polymer Research Institute of Sichuan University
- Chengdu 610065
- China
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12
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Liu B, Bao Y, Ling HF, Zhu WS, Gong RJ, Lin JY, Xie LH, Yi MD, Huang W. Fluorinated p-n type copolyfluorene as polymer electret for stable nonvolatile organic transistor memory device. CHINESE JOURNAL OF POLYMER SCIENCE 2016. [DOI: 10.1007/s10118-016-1826-0] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/21/2022]
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Tung WY, Li MH, Wu HC, Liu HY, Hsieh YT, Chen WC. High Performance Nonvolatile Transistor Memories Utilizing Functional Polyimide-Based Supramolecular Electrets. Chem Asian J 2016; 11:1631-40. [DOI: 10.1002/asia.201600365] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/20/2016] [Indexed: 11/08/2022]
Affiliation(s)
- Wei-Yao Tung
- Department of Chemical Engineering; National Taiwan University; No. 1, Sec. 4, Roosevelt Rd. Taipei 10617 Taiwan
| | - Meng-Hsien Li
- Department of Chemical Engineering; National Taiwan University; No. 1, Sec. 4, Roosevelt Rd. Taipei 10617 Taiwan
| | - Hung-Chin Wu
- Department of Chemical Engineering; National Taiwan University; No. 1, Sec. 4, Roosevelt Rd. Taipei 10617 Taiwan
| | - Hsin-Yu Liu
- Department of Chemical Engineering; National Taiwan University; No. 1, Sec. 4, Roosevelt Rd. Taipei 10617 Taiwan
| | - Yun-Ting Hsieh
- Department of Chemical Engineering; National Taiwan University; No. 1, Sec. 4, Roosevelt Rd. Taipei 10617 Taiwan
| | - Wen-Chang Chen
- Department of Chemical Engineering; National Taiwan University; No. 1, Sec. 4, Roosevelt Rd. Taipei 10617 Taiwan
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Chung FJ, Liu HY, Jiang BY, He GY, Wang SH, Wu WC, Liu CL. Random styrenic copolymers with pendant pyrene moieties: Synthesis and applications in organic field-effect transistor memory. ACTA ACUST UNITED AC 2015. [DOI: 10.1002/pola.27995] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- Fei-Jan Chung
- Department of Chemical Engineering; National Cheng Kung University; Tainan 70101 Taiwan
| | - Hsin-Yu Liu
- Department of Chemical and Materials Engineering; National Central University; Taoyuan 32001 Taiwan
| | - Bo-Yi Jiang
- Department of Chemical and Materials Engineering; National Central University; Taoyuan 32001 Taiwan
| | - Guan-Yu He
- Department of Chemical and Materials Engineering; National Central University; Taoyuan 32001 Taiwan
| | - Shi-Hao Wang
- Department of Chemical Engineering; National Cheng Kung University; Tainan 70101 Taiwan
| | - Wen-Chung Wu
- Department of Chemical Engineering; National Cheng Kung University; Tainan 70101 Taiwan
| | - Cheng-Liang Liu
- Department of Chemical and Materials Engineering; National Central University; Taoyuan 32001 Taiwan
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Chiu YC, Sun HS, Lee WY, Halila S, Borsali R, Chen WC. Oligosaccharide Carbohydrate Dielectrics toward High-Performance Non-volatile Transistor Memory Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2015; 27:6257-6264. [PMID: 26332569 DOI: 10.1002/adma.201502088] [Citation(s) in RCA: 25] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/01/2015] [Revised: 07/04/2015] [Indexed: 06/05/2023]
Abstract
Oligosaccharides are one of the most promising biomaterials because they are abundant, renewable, diversified, and biosourced. The use of oligo- or polysaccharides for high-performance non-volatile organic field-effect-transistor memory is demonstrated herein. The charge-storage mechanism is attributed to charged hydroxyl groups that induce stronger hydrogen bonding, thus leading to the stabilization of trapped charges. This study reveals a promising future for green memory devices.
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Affiliation(s)
- Yu-Cheng Chiu
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan, ROC
| | - Han-Sheng Sun
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan, ROC
| | - Wen-Ya Lee
- Department of Chemical Engineering and Biotechnology, National Taipei University of Technology, Taipei, 106, Taiwan, ROC
| | - Sami Halila
- Centre de Recherches sur les Macromolécules Végétales (CERMAV, UPR-CNRS 5301), Affiliated with Grenoble Alpes University, Member of Institut de Chimie Moléculaire de Grenoble (ICMG, FR-CNRS 2607) and Institut Carnot PolyNat, BP53, 38041, Grenoble CEDEX 9, France
| | - Redouane Borsali
- Centre de Recherches sur les Macromolécules Végétales (CERMAV, UPR-CNRS 5301), Affiliated with Grenoble Alpes University, Member of Institut de Chimie Moléculaire de Grenoble (ICMG, FR-CNRS 2607) and Institut Carnot PolyNat, BP53, 38041, Grenoble CEDEX 9, France
| | - Wen-Chang Chen
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan, ROC
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16
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Zhang B, Chen Y, Neoh KG, Kang ET. Organic Electronic Memory Devices. ELECTRICAL MEMORY MATERIALS AND DEVICES 2015. [DOI: 10.1039/9781782622505-00001] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/28/2023]
Abstract
With the rapid development of the electronics industry in recent years, information technology devices, such as personal computers, mobile phones, digital cameras and media players, have become an essential part of our daily life. From both the technological and economic points of view, the development of novel information storage materials and devices has become an emergent issue facing the electronics industry. Due to the advantages of good scalability, flexibility, low cost, ease of processing, 3D-stacking capability and high capacity for data storage, organic-based electrical memory devices have been promising alternatives or supplementary devices to conventional inorganic semiconductor-based memory technology. The basic concepts and historical development of electronic memory devices are first presented. The following section introduces the structures and switching mechanisms of organic electronic memory devices classified as transistors, capacitors and resistors. Subsequently, the progress in the field of organic-based memory materials and devices is systematically summarized and discussed. Finally, the challenges posed to the development of novel organic electronic memory devices are summarized.
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Affiliation(s)
- Bin Zhang
- Department of Chemical & Biomolecular Engineering, National University of Singapore 10 Kent Ridge 119260 Singapore
- Key Lab for Advanced Materials, Institute of Applied Chemistry, East China University of Science and Technology 130 Meilong Road Shanghai 200237 China
| | - Yu Chen
- Key Lab for Advanced Materials, Institute of Applied Chemistry, East China University of Science and Technology 130 Meilong Road Shanghai 200237 China
| | - Koon-Gee Neoh
- Department of Chemical & Biomolecular Engineering, National University of Singapore 10 Kent Ridge 119260 Singapore
| | - En-Tang Kang
- Department of Chemical & Biomolecular Engineering, National University of Singapore 10 Kent Ridge 119260 Singapore
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Chou YH, Chang HC, Liu CL, Chen WC. Polymeric charge storage electrets for non-volatile organic field effect transistor memory devices. Polym Chem 2015. [DOI: 10.1039/c4py01213e] [Citation(s) in RCA: 155] [Impact Index Per Article: 17.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/26/2022]
Abstract
A review on polymeric charge storage electrets for constructing non-volatile organic field effect memory devices is presented.
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Affiliation(s)
- Ying-Hsuan Chou
- Department of Chemical Engineering
- National Taiwan University
- Taipei 10617
- Taiwan
| | - Hsuan-Chun Chang
- Department of Chemical Engineering
- National Taiwan University
- Taipei 10617
- Taiwan
| | - Cheng-Liang Liu
- Department of Chemical and Materials Engineering
- National Central University
- Taoyuan
- 32001 Taiwan
| | - Wen-Chang Chen
- Department of Chemical Engineering
- National Taiwan University
- Taipei 10617
- Taiwan
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18
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Chiu YC, Chen TY, Chen Y, Satoh T, Kakuchi T, Chen WC. High-performance nonvolatile organic transistor memory devices using the electrets of semiconducting blends. ACS APPLIED MATERIALS & INTERFACES 2014; 6:12780-12788. [PMID: 24998629 DOI: 10.1021/am502732d] [Citation(s) in RCA: 31] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
Organic nonvolatile transistor memory devices of the n-type semiconductor N,N'-bis(2-phenylethyl)-perylene-3,4:9,10-tetracarboxylic diimide (BPE-PTCDI) were prepared using various electrets (i.e., three-armed star-shaped poly[4-(diphenylamino)benzyl methacrylate] (N(PTPMA)3) and its blends with 6,6-phenyl-C61-butyric acid methyl ester (PCBM), 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pen) or ferrocene). In the device using the PCBM:N(PTPMA)3 blend electret, it changed its memory feature from a write-once-read-many (WORM) type to a flash type as the PCBM content increased and could be operated repeatedly based on a tunneling process. The large shifts on the reversible transfer curves and the hysteresis after implementing a gate bias indicated the considerable charge storage in the electret layer. On the other hand, the memory characteristics showed a flash type and a WORM characteristic, respectively, using the donor/donor electrets TIPS-pen:N(PTPMA)3 and ferrocene:N(PTPMA)3. The variation on the memory characteristics was attributed to the difference of energy barrier at the interface when different types of electret materials were employed. All the studied memory devices exhibited a long retention over 10(4) s with a highly stable read-out current. In addition, the afore-discussed memory devices by inserting another electret layer of poly(methacrylic acid) (PMAA) between the BPE-PTCDI layer and the semiconducting blend layer enhanced the write-read-erase-read (WRER) operation cycle as high as 200 times. This study suggested that the energy level and charge transfer in the blend electret had a significant effect on tuning the characteristics of nonvolatile transistor memory devices.
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Affiliation(s)
- Yu-Cheng Chiu
- Department of Chemical Engineering, National Taiwan University , Taipei 10617, Taiwan
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Dong L, Chiu YC, Chueh CC, Yu AD, Chen WC. Semi-conjugated acceptor-based polyimides as electrets for nonvolatile transistor memory devices. Polym Chem 2014. [DOI: 10.1039/c4py00988f] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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