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Qin Y, Gao Y, Lv F, Huang F, Liu F, Zhong T, Cui Y, Tian X. Multilevel resistive switching memory in lead-free double perovskite La[Formula: see text]NiFeO[Formula: see text] films. DISCOVER NANO 2023; 18:107. [PMID: 37644377 PMCID: PMC10465475 DOI: 10.1186/s11671-023-03885-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/06/2023] [Accepted: 08/08/2023] [Indexed: 08/31/2023]
Abstract
Dense and flat La[Formula: see text]NiFeO[Formula: see text] (LNFO) films were fabricated on the indium tin oxide-coated glass (ITO/glass) substrate by sol-gel method. The bipolar resistive switching behavior (BRS) could be maintained in 100 cycles and remained after 30 days, indicating that the LNFO-based RS device owned good memory stability. Surprisingly, the multilevel RS characteristics were firstly observed in the Au/LNFO/ITO/glass device. The high resistance states (HRSs) and low resistance state (LRS) with the maximum ratio of [Formula: see text] 500 could be remained stably in 900 s and 130 cycles, demonstrating the fine retention and endurance ability of this LNFO-based RS device. The BRS behavior of Au/LNFO/ITO/glass devices primarily obeyed the SCLC mechanism controlled by oxygen vacancies (OVs) dispersed in the LNFO layer. Under the external electric field, injected electrons were captured or discharged by OVs during trapping or detrapping process in the LNFO layer. Thus, the resistive state switched between HRS and LRS reversibly. Moreover, the modulation of Schottky-like barrier formed at the Au/LNFO interface was contributed to the resistive states switchover. It was related to the change in OVs located at the dissipative region near the Au/LNFO interface. The multilevel RS ability of LNFO-based devices in this work provides an opportunity for researching deeply on the high density RS memory in lead-free double perovskite oxides-based devices.
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Affiliation(s)
- Yongfu Qin
- College of Physical Science and Technology and Guangxi Key Laboratory of Nuclear Physics and Technology, Guangxi Normal University, Yucai Road, Guilin, 541000 China
| | - Yuan Gao
- College of Physical Science and Technology and Guangxi Key Laboratory of Nuclear Physics and Technology, Guangxi Normal University, Yucai Road, Guilin, 541000 China
| | - Fengzhen Lv
- College of Physical Science and Technology and Guangxi Key Laboratory of Nuclear Physics and Technology, Guangxi Normal University, Yucai Road, Guilin, 541000 China
| | - Fangfang Huang
- College of Physical Science and Technology and Guangxi Key Laboratory of Nuclear Physics and Technology, Guangxi Normal University, Yucai Road, Guilin, 541000 China
| | - Fuchi Liu
- College of Physical Science and Technology and Guangxi Key Laboratory of Nuclear Physics and Technology, Guangxi Normal University, Yucai Road, Guilin, 541000 China
| | - Tingting Zhong
- College of Physical Science and Technology and Guangxi Key Laboratory of Nuclear Physics and Technology, Guangxi Normal University, Yucai Road, Guilin, 541000 China
| | - Yuhang Cui
- College of Physical Science and Technology and Guangxi Key Laboratory of Nuclear Physics and Technology, Guangxi Normal University, Yucai Road, Guilin, 541000 China
| | - Xuedong Tian
- College of Physical Science and Technology and Guangxi Key Laboratory of Nuclear Physics and Technology, Guangxi Normal University, Yucai Road, Guilin, 541000 China
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2
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Zhang K, Li Y, Fu Z, Chi X, Xiong Y, Yao Y, Wang X, Tang Z, Wang J, Nie K, Yang Z, Yan YM. Regulation of the Work Function Difference Promotes In Situ Phase Transition of WO 3-x for Efficient Formate Electrooxidation. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 36881479 DOI: 10.1021/acsami.3c01260] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Direct formate fuel cells (DFFCs) have drawn tremendous attention because they are environmentally benign and have good safety. However, the lack of advanced catalysts for formate electrooxidation hinders the development and applications of DFFCs. Herein, we report a strategy of regulating the metal-substrate work function difference to effectively promote the transfer of adsorbed hydrogen (Had), thus enhancing formate electrooxidation in alkaline solutions. By introducing rich oxygen vacancies, the obtained catalysts of Pd/WO3-x-R show outstanding formate electrooxidation activity, exhibiting an extremely high peak current of 15.50 mA cm-2 with a lower peak potential of 0.63 V. In situ electrochemical Fourier transform infrared and in situ Raman measurements verify an enhanced in situ phase transition from WO3-x to HxWO3-x during the formate oxidation reaction process over the Pd/WO3-x-R catalyst. The results of experimental and density functional theory (DFT) calculations confirm that the work function difference (ΔΦ) between the metal (Pd) and substrate (WO3-x) would be regulated by inducing oxygen vacancies in the substrate, resulting in improved hydrogen spillover at the interface of the catalyst, which is essentially responsible for the observed high performance of formate oxidation. Our findings provide a novel strategy of rationally designing efficient formate electrooxidation catalysts.
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Affiliation(s)
- Kaixin Zhang
- State Key Lab of Organic-Inorganic Composites, Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing 100029, China
| | - Yongjia Li
- State Key Lab of Organic-Inorganic Composites, Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing 100029, China
| | - Zhenzhen Fu
- State Key Lab of Organic-Inorganic Composites, Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing 100029, China
| | - Xinyue Chi
- State Key Lab of Organic-Inorganic Composites, Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing 100029, China
| | - Yuanyuan Xiong
- State Key Lab of Organic-Inorganic Composites, Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing 100029, China
| | - Yebo Yao
- State Key Lab of Organic-Inorganic Composites, Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing 100029, China
| | - Xiaoxuan Wang
- State Key Lab of Organic-Inorganic Composites, Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing 100029, China
| | - Zheng Tang
- State Key Lab of Organic-Inorganic Composites, Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing 100029, China
| | - Jiaou Wang
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Kaiqi Nie
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Zhiyu Yang
- State Key Lab of Organic-Inorganic Composites, Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing 100029, China
| | - Yi-Ming Yan
- State Key Lab of Organic-Inorganic Composites, Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing 100029, China
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3
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Nirmal KA, Nhivekar GS, Khot AC, Dongale TD, Kim TG. Unraveling the Effect of the Water Content in the Electrolyte on the Resistive Switching Properties of Self-Assembled One-Dimensional Anodized TiO 2 Nanotubes. J Phys Chem Lett 2022; 13:7870-7880. [PMID: 35979996 DOI: 10.1021/acs.jpclett.2c01075] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The applied potential, time, and water content are crucial factors in the electrochemical anodization process because the growth of one-dimensional nanotubes can be accelerated by enhancing the corrosive effect. We investigated the effect of the water content on the resistive switching (RS) properties of Ti foils by anodizing the foils and varying the water content in an electrolyte (1-10 vol %). By increasing the water content, we facilitated a slow transition from nanopores to nanotubes and realized an increase in the tube wall diameter and tube length. All of the fabricated memristive devices exhibited a reliable and reproducible bipolar resistive switching effect. The optimized device exhibited bipolar RS properties with good dc endurance (104 cycles) and data retention capability (105 s). Our results suggest that as the water content increases to 5 vol %, the RS process improves; further increases in the water content impair the RS process.
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Affiliation(s)
- Kiran A Nirmal
- School of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Ganesh S Nhivekar
- Department of Electronics, Yashavantrao Chavan Institute of Science, Satara 415 001, India
| | - Atul C Khot
- School of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Tukaram D Dongale
- Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416 004, India
| | - Tae Geun Kim
- School of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul 02841, Republic of Korea
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4
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Ren W, Jin K, Ma C, Ge C, Guo E, Wang C, Xu X, Yang G. Manipulating the electronic structure and physical properties in monolayer Mo 2I 3Br 3via strain and doping. NANOSCALE 2022; 14:8934-8943. [PMID: 35642506 DOI: 10.1039/d2nr01002j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Identifying new two-dimensional intrinsic ferromagnets with high transition temperatures is a key step of improving device performance. Here we used first-principles calculations to demonstrate that the monolayer Janus Mo2I3Br3 is an intrinsic ferromagnetic bipolar semiconductor with a large out-of-plane spin orientation. The calculated phonon dispersion and ab initio molecular dynamic simulations indicate the stability dynamically and thermally. Furthermore, we investigated the effect of electrostatic doping or in-plane biaxial strain on the electronic structures and magnetic and optical properties of monolayer Mo2I3Br3. We find that the magnetic anisotropy energy and Curie temperature are enhanced more than 4 and 2 times with the hole doping compared with those in the pristine monolayer Mo2I3Br3, respectively. The calculated electronic structures show that the stable half-metallic states are formed by electron or hole doping due to the strong spin polarization of the electronic states around the Fermi level. Furthermore, the spin orientation in the metallic channel of the doped monolayer Mo2I3Br3 can be flipped with the increase of electron doping concentration. In addition, the magnetic anisotropy energy and Curie temperature can also be effectively manipulated by in-plane biaxial strain. The spin polarization of the conduction band minimum can be reversed by the tensile strain of 3% for the monolayer Mo2I3Br3, transforming it into an indirect band gap semiconductor. Finally, the calculated large and tunable optical absorption coefficient indicates that monolayer Mo2I3Br3 is a promising candidate for potential optoelectronic applications. Our results may open up more opportunities for few-layer van der Waals crystals in magnetic storage, spintronics, and optoelectronic devices.
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Affiliation(s)
- Wenning Ren
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Kuijuan Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Cheng Ma
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Chen Ge
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Erjia Guo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Can Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Xiulai Xu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Guozhen Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
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5
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Electric-Field-Tunable Transport and Photo-Resistance Properties in LaMnO3−x/PMN-PT Heterostructures. COATINGS 2022. [DOI: 10.3390/coatings12070890] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/04/2023]
Abstract
Multiferroic heterojunctions are promising for application in low-power storage and spintronics due to their magnetoelectric coupling properties. Controlling the magnetic and transport properties of magnetic materials by external stimuli and then realizing advanced devices constitute the key mission in this field. We fabricated a multiferroic heterostructure consisting of a ferroelectric single-crystal (001)-0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 substrate and an epitaxial 40 nm LaMnO3−x film. By applying dc electric fields to the ferroelectric substrate, the resistance and the photo-resistance of the LaMnO3−x film could be significantly modulated. With the electric field increasing from 0 to +4.8 kV/cm, the photo-resistance increased by ~4.1% at room temperature. The curve of photo-resistance versus the cycling electric field has a butterfly shape due to the piezoelectric strain effect. Using in situ X-ray diffraction measurements, the linear relationship of the strain and the electric field was quantitatively studied.
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6
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Sun B, Zhou G, Sun L, Zhao H, Chen Y, Yang F, Zhao Y, Song Q. ABO 3 multiferroic perovskite materials for memristive memory and neuromorphic computing. NANOSCALE HORIZONS 2021; 6:939-970. [PMID: 34652346 DOI: 10.1039/d1nh00292a] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The unique electron spin, transfer, polarization and magnetoelectric coupling characteristics of ABO3 multiferroic perovskite materials make them promising candidates for application in multifunctional nanoelectronic devices. Reversible ferroelectric polarization, controllable defect concentration and domain wall movement originated from the ABO3 multiferroic perovskite materials promotes its memristive effect, which further highlights data storage, information processing and neuromorphic computing in diverse artificial intelligence applications. In particular, ion doping, electrode selection, and interface modulation have been demonstrated in ABO3-based memristive devices for ultrahigh data storage, ultrafast information processing, and efficient neuromorphic computing. These approaches presented today including controlling the dopant in the active layer, altering the oxygen vacancy distribution, modulating the diffusion depth of ions, and constructing the interface-dependent band structure were believed to be efficient methods for obtaining unique resistive switching (RS) behavior for various applications. In this review, internal physical dynamics, preparation technologies, and modulation methods are systemically examined as well as the progress, challenges, and possible solutions are proposed for next generation emerging ABO3-based memristive application in artificial intelligence.
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Affiliation(s)
- Bai Sun
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials (Ministry of Education of China), Southwest Jiaotong University, Chengdu, Sichuan 610031, China.
- Superconductivity and New Energy R&D Center, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
| | - Guangdong Zhou
- School of Artificial Intelligence and School of Materials and Energy, Southwest University, Chongqing 400715, China.
| | - Linfeng Sun
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Hongbin Zhao
- State Key Laboratory of Advanced Materials for Smart Sensing, General Research Institute for Nonferrous Metals, Beijing, 100088, China
| | - Yuanzheng Chen
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials (Ministry of Education of China), Southwest Jiaotong University, Chengdu, Sichuan 610031, China.
| | - Feng Yang
- Superconductivity and New Energy R&D Center, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
| | - Yong Zhao
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials (Ministry of Education of China), Southwest Jiaotong University, Chengdu, Sichuan 610031, China.
- Superconductivity and New Energy R&D Center, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
| | - Qunliang Song
- School of Artificial Intelligence and School of Materials and Energy, Southwest University, Chongqing 400715, China.
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7
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Yang M, Jin K, Yao H, Zhang Q, Ji Y, Gu L, Ren W, Zhao J, Wang J, Guo E, Ge C, Wang C, Xu X, Wu Q, Yang G. Emergent Magnetic Phenomenon with Unconventional Structure in Epitaxial Manganate Thin Films. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:2100177. [PMID: 34258162 PMCID: PMC8261492 DOI: 10.1002/advs.202100177] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/18/2021] [Revised: 02/25/2021] [Indexed: 06/13/2023]
Abstract
A variety of emergent phenomena are enabled by interface engineering in the complex oxides heterostructures. While extensive attention is attracted to LaMnO3 (LMO) thin films for observing the control of functionalities at its interface with substrate, the nature of the magnetic phases in the thin film is, however, controversial. Here, it is reported that the ferromagnetism in two and five unit cells thick LMO films epitaxially deposited on (001)-SrTiO3 substrates, a ferromagnetic/ferromagnetic coupling in eight and ten unit cells ones, and a striking ferromagnetic/antiferromagnetic pinning effect with apparent positive exchange bias in 15 and 20 unit cells ones are observed. This novel phenomenon in both 15 and 20 unit cells films indicates a coexistence of three magnetic orderings in a single LMO film. The high-resolution scanning transmission electron microscopy suggests a P21/n to Pbnm symmetry transition from interface to surface, with the spatial stratification of MnO6 octahedral morphology, corresponding to different magnetic orderings. These results can shed some new lights on manipulating the functionality of oxides by interface engineering.
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Affiliation(s)
- Mingwei Yang
- Institute of PhysicsChinese Academy of SciencesBeijing100190China
- School of Physical Sciences, University of Chinese Academy of SciencesBeijing100049China
| | - Kuijuan Jin
- Institute of PhysicsChinese Academy of SciencesBeijing100190China
- School of Physical Sciences, University of Chinese Academy of SciencesBeijing100049China
- Songshan Lake Materials LaboratoryDongguanGuangdong523808China
| | - Hongbao Yao
- Institute of PhysicsChinese Academy of SciencesBeijing100190China
- School of Physical Sciences, University of Chinese Academy of SciencesBeijing100049China
| | - Qinghua Zhang
- Institute of PhysicsChinese Academy of SciencesBeijing100190China
| | - Yiru Ji
- Institute of PhysicsChinese Academy of SciencesBeijing100190China
- School of Physical Sciences, University of Chinese Academy of SciencesBeijing100049China
| | - Lin Gu
- Institute of PhysicsChinese Academy of SciencesBeijing100190China
- School of Physical Sciences, University of Chinese Academy of SciencesBeijing100049China
| | - Wenning Ren
- Institute of PhysicsChinese Academy of SciencesBeijing100190China
- School of Physical Sciences, University of Chinese Academy of SciencesBeijing100049China
| | - Jiali Zhao
- Beijing Synchrotron Radiation FacilityInstitute of High Energy PhysicsChinese Academy of SciencesBeijing100039China
| | - Jiaou Wang
- Beijing Synchrotron Radiation FacilityInstitute of High Energy PhysicsChinese Academy of SciencesBeijing100039China
| | - Er‐Jia Guo
- Institute of PhysicsChinese Academy of SciencesBeijing100190China
- School of Physical Sciences, University of Chinese Academy of SciencesBeijing100049China
- Songshan Lake Materials LaboratoryDongguanGuangdong523808China
| | - Chen Ge
- Institute of PhysicsChinese Academy of SciencesBeijing100190China
- School of Physical Sciences, University of Chinese Academy of SciencesBeijing100049China
| | - Can Wang
- Institute of PhysicsChinese Academy of SciencesBeijing100190China
- School of Physical Sciences, University of Chinese Academy of SciencesBeijing100049China
- Songshan Lake Materials LaboratoryDongguanGuangdong523808China
| | - Xiulai Xu
- Institute of PhysicsChinese Academy of SciencesBeijing100190China
- School of Physical Sciences, University of Chinese Academy of SciencesBeijing100049China
- Songshan Lake Materials LaboratoryDongguanGuangdong523808China
| | - Qiong Wu
- International Center for Quantum MaterialsSchool of PhysicsPeking UniversityBeijing100871China
| | - Guozhen Yang
- Institute of PhysicsChinese Academy of SciencesBeijing100190China
- School of Physical Sciences, University of Chinese Academy of SciencesBeijing100049China
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8
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Zhou Z, López-Domínguez P, Abdullah M, Barber DM, Meng X, Park J, Van Driessche I, Schiffman JD, Crosby AJ, Kittilstved KR, Nonnenmann SS. Memristive Behavior of Mixed Oxide Nanocrystal Assemblies. ACS APPLIED MATERIALS & INTERFACES 2021; 13:21635-21644. [PMID: 33938727 DOI: 10.1021/acsami.1c03722] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Recent advances in memristive nanocrystal assemblies leverage controllable colloidal chemistry to induce a broad range of defect-mediated electrochemical reactions, switching phenomena, and modulate active parameters. The sample geometry of virtually all resistive switching studies involves thin film layers comprising monomodal diameter nanocrystals. Here we explore the evolution of bipolar and threshold resistive switching across highly ordered, solution-processed nanoribbon assemblies and mixtures comprising BaZrO3 (BZO) and SrZrO3 (SZO) nanocrystals. The effects of nanocrystal size, packing density, and A-site substitution on operating voltage (VSET and VTH) and switching mechanism were studied through a systematic comparison of nanoribbon heterogeneity (i.e., BZO-BZO vs BZO-SZO) and monomodal vs bimodal size distributions (i.e., small-small and small-large). Analysis of the current-voltage response confirms that tip-induced, trap-mediated space-charge-limited current and trap-assisted tunneling processes drive the low- and high-resistance states, respectively. Our results demonstrate that both smaller nanocrystals and heavier alkaline earth substitution decrease the onset voltage and improve stability and state retention of monomodal assemblies and bimodal nanocrystal mixtures, thus providing a base correlation that informs fabrication of solution-processed, memristive nanocrystal assemblies.
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Affiliation(s)
- Zimu Zhou
- Department of Mechanical and Industrial Engineering, University of Massachusetts Amherst, Amherst, Massachusetts 01003, United States
| | | | - Muhammad Abdullah
- Department of Chemistry, University of Massachusetts Amherst, Amherst, Massachusetts 01003, United States
| | - Dylan M Barber
- Department of Polymer Science and Engineering, University of Massachusetts Amherst, Amherst, Massachusetts 01003, United States
| | - Xiangxi Meng
- Department of Chemical Engineering, University of Massachusetts Amherst, Amherst, Massachusetts 01003, United States
| | - Jieun Park
- Department of Mechanical and Industrial Engineering, University of Massachusetts Amherst, Amherst, Massachusetts 01003, United States
| | | | - Jessica D Schiffman
- Department of Chemical Engineering, University of Massachusetts Amherst, Amherst, Massachusetts 01003, United States
| | - Alfred J Crosby
- Department of Polymer Science and Engineering, University of Massachusetts Amherst, Amherst, Massachusetts 01003, United States
| | - Kevin R Kittilstved
- Department of Chemistry, University of Massachusetts Amherst, Amherst, Massachusetts 01003, United States
| | - Stephen S Nonnenmann
- Department of Mechanical and Industrial Engineering, University of Massachusetts Amherst, Amherst, Massachusetts 01003, United States
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9
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Chen S, Huang H, Zhao D, Zhou J, Yu J, Qu B, Liu Q, Sun H, Zhao J. Direct Growth of Polycrystalline GaN Porous Layer with Rich Nitrogen Vacancies: Application to Catalyst-Free Electrochemical Detection. ACS APPLIED MATERIALS & INTERFACES 2020; 12:53807-53815. [PMID: 33206499 DOI: 10.1021/acsami.0c15824] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/09/2023]
Abstract
It has been demonstrated that defect engineering is an effective strategy to enhance the activity of materials. Herein, a polycrystalline GaN porous layer (PGP) with high catalytic activity was grown by self-assembly on GaN-coated sapphire substrate by using low-temperature (LT) MOCVD growth. Without doping, LT growth can significantly improve the activity and electrical conductivity of PGP, owing to the presence of rich N-vacancies (∼1020 cm-3). Identification of rich N-vacancies in the PGP material was realized by using atomically resolved STEM (AR-STEM) characterization. The optimized PGP was applied to catalyst-free electrochemical detection of H2O2 with a limit of detection (LOD) of 50 nM, a fast response speed of 3 s, a wide linear detection range (50 nM to 12 mM), and a high stability. The LOD is exceeding 40 fold lower than that of reported metal-catalyst decorated GaN. Moreover, a quantitative relationship between the sensing performances and N-vacancy of PGP was established. To our knowledge, it is the first time that intrinsic GaN materials can exhibit high catalytic activity.
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Affiliation(s)
- Shunji Chen
- Key Lab of Liaoning IC Technology, School of Biomedical Engineer, Faculty of Electronic Information and Electrical Engineering, Dalian University of Technology, Dalian 116024, China
| | - Hui Huang
- Key Lab of Liaoning IC Technology, School of Biomedical Engineer, Faculty of Electronic Information and Electrical Engineering, Dalian University of Technology, Dalian 116024, China
| | - Danna Zhao
- Key Lab of Liaoning IC Technology, School of Biomedical Engineer, Faculty of Electronic Information and Electrical Engineering, Dalian University of Technology, Dalian 116024, China
| | - Jialing Zhou
- Key Lab of Liaoning IC Technology, School of Biomedical Engineer, Faculty of Electronic Information and Electrical Engineering, Dalian University of Technology, Dalian 116024, China
| | - Jun Yu
- Key Lab of Liaoning IC Technology, School of Biomedical Engineer, Faculty of Electronic Information and Electrical Engineering, Dalian University of Technology, Dalian 116024, China
| | - Bo Qu
- Bruker (Beijing) Scientific Technology Co. Ltd., Beijing 100081, China
| | - Qiunan Liu
- Clean Nano Energy Center, State Key Laboratory of Metastable Materials Science and Technology, YanshanUniversity, Qinhuangdao 066004, P. R. China
| | - Haiming Sun
- Clean Nano Energy Center, State Key Laboratory of Metastable Materials Science and Technology, YanshanUniversity, Qinhuangdao 066004, P. R. China
| | - Jun Zhao
- Clean Nano Energy Center, State Key Laboratory of Metastable Materials Science and Technology, YanshanUniversity, Qinhuangdao 066004, P. R. China
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10
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Synthesis, characterizations, and utilization of oxygen-deficient metal oxides for lithium/sodium-ion batteries and supercapacitors. Coord Chem Rev 2019. [DOI: 10.1016/j.ccr.2019.06.015] [Citation(s) in RCA: 125] [Impact Index Per Article: 25.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/06/2023]
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11
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Sun B, Chen Y, Xiao M, Zhou G, Ranjan S, Hou W, Zhu X, Zhao Y, Redfern SAT, Zhou YN. A Unified Capacitive-Coupled Memristive Model for the Nonpinched Current-Voltage Hysteresis Loop. NANO LETTERS 2019; 19:6461-6465. [PMID: 31434487 DOI: 10.1021/acs.nanolett.9b02683] [Citation(s) in RCA: 26] [Impact Index Per Article: 5.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The concept of the memristor, a resistor with memory, was proposed by Chua in 1971 as the fourth basic element of electric circuitry. Despite a significant amount of effort devoted to the understanding of memristor theory, our understanding of the nonpinched current-voltage (I-V) hysteresis loop in memristors remains incomplete. Here we propose a physical model of a memristor, with a capacitor connected in parallel, which explains how the nonpinched I-V hysteresis behavior originates from the capacitive-coupled memristive effect. Our model replicates eight types of characteristic nonlinear I-V behavior, which explains all observed nonpinched I-V curves seen in experiments. Furthermore, a reversible transition from a nonpinched I-V hysteresis loop to an ideal pinched I-V hysteresis loop is found, which explains the experimental data obtained in C15H11O6-based devices when subjected to an external stimulus (e.g., voltage, moisture, or temperature). Our results provide the vital physics models and materials insights for elucidating the origins of nonpinched I-V hysteresis loops ascribed to capacitive-coupled memristive behavior.
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Affiliation(s)
- Bai Sun
- Department of Mechanics and Mechatronics Engineering, Centre for Advanced Materials Joining , Waterloo Institute for Nanotechnology, University of Waterloo , Waterloo , Ontario N2L 3G1 , Canada
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials (Ministry of Education of China) , Southwest Jiaotong University , Chengdu , Sichuan 610031 , China
| | - Yuanzheng Chen
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials (Ministry of Education of China) , Southwest Jiaotong University , Chengdu , Sichuan 610031 , China
| | - Ming Xiao
- Department of Mechanics and Mechatronics Engineering, Centre for Advanced Materials Joining , Waterloo Institute for Nanotechnology, University of Waterloo , Waterloo , Ontario N2L 3G1 , Canada
| | - Guangdong Zhou
- Scholl of Artificial Intelligence , Southwest University , Chongqing 400715 , China
| | - Shubham Ranjan
- Department of Electrical and Computer Engineering , University of Waterloo , Waterloo , Ontario N2L 3G1 , Canada
| | - Wentao Hou
- Department of Mechanics and Mechatronics Engineering, Centre for Advanced Materials Joining , Waterloo Institute for Nanotechnology, University of Waterloo , Waterloo , Ontario N2L 3G1 , Canada
| | - Xiaoli Zhu
- Department of Electrical and Computer Engineering , University of Waterloo , Waterloo , Ontario N2L 3G1 , Canada
| | - Yong Zhao
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials (Ministry of Education of China) , Southwest Jiaotong University , Chengdu , Sichuan 610031 , China
| | - Simon A T Redfern
- Department of Earth Sciences , University of Cambridge , Downing Street , Cambridge CB2 3EQ , United Kingdom
| | - Y Norman Zhou
- Department of Mechanics and Mechatronics Engineering, Centre for Advanced Materials Joining , Waterloo Institute for Nanotechnology, University of Waterloo , Waterloo , Ontario N2L 3G1 , Canada
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12
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Resistive Switching Memory Devices Based on Body Fluid of Bombyx mori L. MICROMACHINES 2019; 10:mi10080540. [PMID: 31426438 PMCID: PMC6723076 DOI: 10.3390/mi10080540] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/15/2019] [Revised: 08/10/2019] [Accepted: 08/13/2019] [Indexed: 11/21/2022]
Abstract
Resistive switching memory devices are strong candidates for next-generation data storage devices. Biological memristors made from renewable natural biomaterials are very promising due to their biocompatibility, biodegradability, and ecological benignity. In this study, a nonvolatile memristor was fabricated using the body fluid of Bombyx mori as the dielectric layer. The developed Al/Bombyx mori body fluid film/indium tin oxide (ITO) biomemristor exhibited bipolar resistive switching characteristics with a maximum on/off current ratio greater than 104. The device showed a retention time of more than 1 × 104 s without any signs of deterioration, thus proving its good stability and reliability. The resistive switching behavior of the Al/Bombyx mori body fluid film/ITO biological memristor is driven by the formation and breakage of conductive filaments formed by the migration of oxygen ions. This study confirms that Bombyx mori body fluid, a 100% natural, inexpensive, and abundant material, is a potential candidate as a nonvolatile biomemristor material with broad application prospects.
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13
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Sun X, Mo X, Liu L, Sun H, Pan C. Voltage-Driven Room-Temperature Resistance and Magnetization Switching in Ceramic TiO 2/PAA Nanoporous Composite Films. ACS APPLIED MATERIALS & INTERFACES 2019; 11:21661-21667. [PMID: 31136140 DOI: 10.1021/acsami.9b02593] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Voltage control of room-temperature ferromagnetism has remained a big challenge which will greatly influence the multifunctional memory devices. In this paper, porous TiO2 thin films were deposited by dc-reactive magnetron sputtering onto ordered porous anodic alumina (PAA) substrates. Voltage-driving room-temperature resistance and magnetization switching without external magnetic field are simultaneously found in an Ag/TiO2/PAA/Al (Ag/TP/Al) device. Further analysis indicates that the formation/rupture of oxygen vacancy defect-based conductive filaments would be responsible for the changes of resistivity and magnetization. Our present results suggest that the TP nanoporous composite film material may therefore be used to achieve voltage control of magnetism and resistance switching in the future multifunctional memory devices. The Ag/TP/Al devices can also be used for new spintronic devices, neuromorphic operations, and alternative logic circuits and computing.
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Affiliation(s)
- Xidi Sun
- Center on Nanoenergy Research, College of Physical Science and Technology , Guangxi University , Nanning 530004 , Guangxi , PR China
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , PR China
| | - Xiaoming Mo
- Center on Nanoenergy Research, College of Physical Science and Technology , Guangxi University , Nanning 530004 , Guangxi , PR China
| | - Lihu Liu
- College of Physics Science & Information Engineering and Hebei Advanced Thin Film Laboratory , Hebei Normal University , Shijiazhuang , Hebei 050024 , China
| | - Huiyuan Sun
- College of Physics Science & Information Engineering and Hebei Advanced Thin Film Laboratory , Hebei Normal University , Shijiazhuang , Hebei 050024 , China
| | - Caofeng Pan
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , PR China
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14
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Liu S, Jin C, Zheng D, Pang X, Wang Y, Wang P, Zheng W, Bai H. Ferroelectric field manipulated nonvolatile resistance switching in Al:ZnO/Pb(Mg 1/3Nb 2/3) 0.7Ti 0.3O 3 heterostructures at room temperature. Phys Chem Chem Phys 2019; 21:10784-10790. [PMID: 31086927 DOI: 10.1039/c9cp01809c] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/04/2023]
Abstract
Resistance switching was obtained in Al:ZnO/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 heterostructures at room temperature by applying an external electric field. The modulation of the resistance is more pronounced in the thinner samples, indicating that it is an interfacial effect. In addition, the resistance of Al:ZnO films is significantly reduced by the photoexcited carriers when illumination is applied. The results indicate that the carrier density in the Al:ZnO films is modulated under external electric fields, due to the accumulation and depletion of charge at the interface between Al:ZnO and Pb(Mg1/3Nb2/3)0.7Ti0.3O3. Hence, reversible and nonvolatile resistance states can be achieved by the ferroelectric field effect, and it is expected that multilevel storage will be realized.
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Affiliation(s)
- Shasha Liu
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, School of Science, Tianjin University, Tianjin 300350, P. R. China.
| | - Chao Jin
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, School of Science, Tianjin University, Tianjin 300350, P. R. China.
| | - Dongxing Zheng
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, School of Science, Tianjin University, Tianjin 300350, P. R. China.
| | - Xin Pang
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, School of Science, Tianjin University, Tianjin 300350, P. R. China.
| | - Yuchen Wang
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, School of Science, Tianjin University, Tianjin 300350, P. R. China.
| | - Ping Wang
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, School of Science, Tianjin University, Tianjin 300350, P. R. China.
| | - Wanchao Zheng
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, School of Science, Tianjin University, Tianjin 300350, P. R. China.
| | - Haili Bai
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, School of Science, Tianjin University, Tianjin 300350, P. R. China.
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15
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Wlaźlak E, Marzec M, Zawal P, Szaciłowski K. Memristor in a Reservoir System-Experimental Evidence for High-Level Computing and Neuromorphic Behavior of PbI 2. ACS APPLIED MATERIALS & INTERFACES 2019; 11:17009-17018. [PMID: 30986023 DOI: 10.1021/acsami.9b01841] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Lead halides in an asymmetric layered structure form memristive devices which are controlled by the electronic structure of the PbX2|metal interface. In this paper, we explain the mechanism that stands behind the I- V pinched hysteresis loop of the device and shortly present its synaptic-like plasticity (spike-timing-dependent plasticity and spike-rate-dependent plasticity) and nonvolatile memory effects. This memristive element was incorporated into a reservoir system, in particular, the echo-state network with delayed feedback, which exhibits brain-like recurrent behavior and demonstrates metaplasticity as one of the available learning mechanisms. It can serve as a classification system that classifies input signals according to their amplitude.
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Affiliation(s)
- E Wlaźlak
- Faculty of Chemistry , Jagiellonian University , ul. Gronostajowa 2 , 30-060 Kraków , Poland
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16
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Rodriguez-Lamas R, Pla D, Chaix-Pluchery O, Meunier B, Wilhelm F, Rogalev A, Rapenne L, Mescot X, Rafhay Q, Roussel H, Boudard M, Jiménez C, Burriel M. Integration of LaMnO 3+δ films on platinized silicon substrates for resistive switching applications by PI-MOCVD. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2019; 10:389-398. [PMID: 30800578 PMCID: PMC6369995 DOI: 10.3762/bjnano.10.38] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/10/2018] [Accepted: 01/08/2019] [Indexed: 06/09/2023]
Abstract
The next generation of electronic devices requires faster operation velocity, higher storage capacity and reduction of the power consumption. In this context, resistive switching memory chips emerge as promising candidates for developing new non-volatile memory modules. Manganites have received increasing interest as memristive material as they exhibit a remarkable switching response. Nevertheless, their integration in CMOS-compatible substrates, such as silicon wafers, requires further effort. Here the integration of LaMnO3+δ as memristive material in a metal-insulator-metal structure is presented using a silicon-based substrate and the pulsed injection metal organic chemical vapour deposition technique. We have developed three different growth strategies with which we are able to tune the oxygen content and Mn oxidation state moving from an orthorhombic to a rhombohedral structure for the active LaMnO3+δ material. Furthermore, a good resistive switching response has been obtained for LaMnO3+δ-based devices fabricated using optimized growth strategies.
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Affiliation(s)
- Raquel Rodriguez-Lamas
- Univ. Grenoble Alpes, CNRS, Grenoble INP (Institute of Engineering Univ. Grenoble Alpes), LMGP, F-38000 Grenoble, France
| | - Dolors Pla
- Univ. Grenoble Alpes, CNRS, Grenoble INP (Institute of Engineering Univ. Grenoble Alpes), LMGP, F-38000 Grenoble, France
| | - Odette Chaix-Pluchery
- Univ. Grenoble Alpes, CNRS, Grenoble INP (Institute of Engineering Univ. Grenoble Alpes), LMGP, F-38000 Grenoble, France
| | - Benjamin Meunier
- Univ. Grenoble Alpes, CNRS, Grenoble INP (Institute of Engineering Univ. Grenoble Alpes), LMGP, F-38000 Grenoble, France
| | - Fabrice Wilhelm
- European Synchrotron Radiation Facility (ESRF), F-38054 Grenoble, France
| | - Andrei Rogalev
- European Synchrotron Radiation Facility (ESRF), F-38054 Grenoble, France
| | - Laetitia Rapenne
- Univ. Grenoble Alpes, CNRS, Grenoble INP (Institute of Engineering Univ. Grenoble Alpes), LMGP, F-38000 Grenoble, France
| | - Xavier Mescot
- Univ. Grenoble Alpes, CNRS, IMEP-LAHC, F-38000 Grenoble, France
| | - Quentin Rafhay
- Univ. Grenoble Alpes, CNRS, IMEP-LAHC, F-38000 Grenoble, France
| | - Hervé Roussel
- Univ. Grenoble Alpes, CNRS, Grenoble INP (Institute of Engineering Univ. Grenoble Alpes), LMGP, F-38000 Grenoble, France
| | - Michel Boudard
- Univ. Grenoble Alpes, CNRS, Grenoble INP (Institute of Engineering Univ. Grenoble Alpes), LMGP, F-38000 Grenoble, France
| | - Carmen Jiménez
- Univ. Grenoble Alpes, CNRS, Grenoble INP (Institute of Engineering Univ. Grenoble Alpes), LMGP, F-38000 Grenoble, France
| | - Mónica Burriel
- Univ. Grenoble Alpes, CNRS, Grenoble INP (Institute of Engineering Univ. Grenoble Alpes), LMGP, F-38000 Grenoble, France
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17
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Analog Memristive Characteristics and Conditioned Reflex Study Based on Au/ZnO/ITO Devices. ELECTRONICS 2018. [DOI: 10.3390/electronics7080141] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
As the fourth basic electronic component, the application fields of the memristive devices are diverse. The digital resistive switching with sudden resistance change is suitable for the applications of information storage, while the analog memristive devices with gradual resistance change are required in the neural system simulation. In this paper, a transparent device of ZnO films deposited by the magnetron sputtering on indium tin oxides (ITO) glass was firstly prepared and found to show typical analog memristive switching behaviors, including an I–V curve that exhibits a ‘pinched hysteresis loops’ fingerprint. The conductive mechanism of the device was discussed, and the LTspice model was built to emulate the pinched hysteresis loops of the I–V curve. Based on the LTspice model and the Pavlov training circuit, a conditioned reflex experiment has been successfully completed both in the computer simulation and the physical analog circuits. The prepared device also displayed synapses-like characteristics, in which resistance decreased and gradually stabilized with time under the excitation of a series of voltage pulse signals.
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18
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Kaya P, Gregori G, Baiutti F, Yordanov P, Suyolcu YE, Cristiani G, Wrobel F, Benckiser E, Keimer B, van Aken PA, Habermeier HU, Logvenov G, Maier J. High-Temperature Thermoelectricity in LaNiO 3-La 2CuO 4 Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2018; 10:22786-22792. [PMID: 29927575 DOI: 10.1021/acsami.8b02153] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Transition metal oxides exhibit a high potential for application in the field of electronic devices, energy storage, and energy conversion. The ability of building these types of materials by atomic layer-by-layer techniques provides a possibility to design novel systems with favored functionalities. In this study, by means of the atomic layer-by-layer oxide molecular beam epitaxy technique, we designed oxide heterostructures consisting of tetragonal K2NiF4-type insulating La2CuO4 (LCO) and perovskite-type conductive metallic LaNiO3 (LNO) layers with different thicknesses to assess the heterostructure-thermoelectric property-relationship at high temperatures. We observed that the transport properties depend on the constituent layer thickness, interface intermixing, and oxygen-exchange dynamics in the LCO layers, which occurs at high temperatures. As the thickness of the individual layers was reduced, the electrical conductivity decreased and the sign of the Seebeck coefficient changed, revealing the contribution of the individual layers where possible interfacial contributions cannot be ruled out. High-resolution scanning transmission electron microscopy investigations showed that a substitutional solid solution of La2(CuNi)O4 was formed when the thickness of the constituent layers was decreased.
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Affiliation(s)
- Pinar Kaya
- Max Planck Institute for Solid State Research , Heisenbergstr. 1 , D-70569 Stuttgart , Germany
| | - Giuliano Gregori
- Max Planck Institute for Solid State Research , Heisenbergstr. 1 , D-70569 Stuttgart , Germany
| | - Federico Baiutti
- Max Planck Institute for Solid State Research , Heisenbergstr. 1 , D-70569 Stuttgart , Germany
| | - Petar Yordanov
- Max Planck Institute for Solid State Research , Heisenbergstr. 1 , D-70569 Stuttgart , Germany
| | - Y Eren Suyolcu
- Max Planck Institute for Solid State Research , Heisenbergstr. 1 , D-70569 Stuttgart , Germany
| | - Georg Cristiani
- Max Planck Institute for Solid State Research , Heisenbergstr. 1 , D-70569 Stuttgart , Germany
| | - Friederike Wrobel
- Max Planck Institute for Solid State Research , Heisenbergstr. 1 , D-70569 Stuttgart , Germany
| | - Eva Benckiser
- Max Planck Institute for Solid State Research , Heisenbergstr. 1 , D-70569 Stuttgart , Germany
| | - Bernhard Keimer
- Max Planck Institute for Solid State Research , Heisenbergstr. 1 , D-70569 Stuttgart , Germany
| | - Peter A van Aken
- Max Planck Institute for Solid State Research , Heisenbergstr. 1 , D-70569 Stuttgart , Germany
| | - Hanns-Ulrich Habermeier
- Max Planck Institute for Solid State Research , Heisenbergstr. 1 , D-70569 Stuttgart , Germany
| | - Gennady Logvenov
- Max Planck Institute for Solid State Research , Heisenbergstr. 1 , D-70569 Stuttgart , Germany
| | - Joachim Maier
- Max Planck Institute for Solid State Research , Heisenbergstr. 1 , D-70569 Stuttgart , Germany
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19
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Wen J, Zhao X, Li Q, Xiong Y, Wang D, Du Y. Nonvolatile Control of Magnetocaloric Operating Temperature by Low Voltage. ACS APPLIED MATERIALS & INTERFACES 2018; 10:15298-15303. [PMID: 29658269 DOI: 10.1021/acsami.8b03088] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/14/2023]
Abstract
The limited operating temperature is the main obstacle for the practical applications of magnetic refrigeration. In this work, the voltage control of magnetocaloric effect (MCE) is investigated in a La0.7Sr0.3MnO3 (LSMO)/CeO2/Pt device. Different from the conventional method of volatile manipulating MCE by large-voltage-induced strain, nonvolatile manipulation of magnetocaloric operating temperature with good stability is realized in the LSMO film by applying low voltages of less than 2.3 V. The experimental results demonstrate that the magnetic entropy change peak temperature for the LSMO film can be extended from 302 to 312 K by voltage. This nonvolatile effect can be well-understood with the resistive switching mechanism and has potential in promoting microscale refrigeration technology.
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Affiliation(s)
- Jiahong Wen
- National Laboratory of Solid State Microstructures and Jiangsu Key Laboratory for Nano Technology , Nanjing University , Nanjing 210093 , P.R. China
| | - Xiaoyu Zhao
- National Laboratory of Solid State Microstructures and Jiangsu Key Laboratory for Nano Technology , Nanjing University , Nanjing 210093 , P.R. China
| | - Qian Li
- National Laboratory of Solid State Microstructures and Jiangsu Key Laboratory for Nano Technology , Nanjing University , Nanjing 210093 , P.R. China
| | - Yuanqiang Xiong
- College of Physics and Electronic Engineering , Chongqing Normal University , Chongqing 400047 , P.R. China
| | - Dunhui Wang
- National Laboratory of Solid State Microstructures and Jiangsu Key Laboratory for Nano Technology , Nanjing University , Nanjing 210093 , P.R. China
| | - Youwei Du
- National Laboratory of Solid State Microstructures and Jiangsu Key Laboratory for Nano Technology , Nanjing University , Nanjing 210093 , P.R. China
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20
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Ting YH, Chen JY, Huang CW, Huang TK, Hsieh CY, Wu WW. Observation of Resistive Switching Behavior in Crossbar Core-Shell Ni/NiO Nanowires Memristor. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14. [PMID: 29205791 DOI: 10.1002/smll.201703153] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/11/2017] [Revised: 10/06/2017] [Indexed: 05/04/2023]
Abstract
The crossbar structure of resistive random access memory (RRAM) is the most promising technology for the development of ultrahigh-density devices for future nonvolatile memory. However, only a few studies have focused on the switching phenomenon of crossbar RRAM in detail. The main purpose of this study is to understand the formation and disruption of the conductive filament occurring at the crossbar center by real-time transmission electron microscope observation. Core-shell Ni/NiO nanowires are utilized to form a cross-structure, which restrict the position of the conductive filament to the crosscenter. A significant morphological change can be observed near the crossbar center, which results from the out-diffusion and backfill of oxygen ions. Energy dispersive spectroscopy and electron energy loss spectroscopy demonstrate that the movement of the oxygen ions leads to the evolution of the conductive filament, followed by redox reactions. Moreover, the distinct reliability of the crossbar device is measured via ex situ experiments. In this work, the switching mechanism of the crossbar core-shell nanowire structure is beneficial to overcome the problem of nanoscale minimization. The experimental method shows high potential to fabricate high-density RRAM devices, which can be applied to 3D stacked package technology and neuromorphic computing systems.
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Affiliation(s)
- Yi-Hsin Ting
- Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, 30010, Hsinchu, Taiwan
| | - Jui-Yuan Chen
- Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, 30010, Hsinchu, Taiwan
| | - Chun-Wei Huang
- Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, 30010, Hsinchu, Taiwan
| | - Ting-Kai Huang
- Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, 30010, Hsinchu, Taiwan
| | - Cheng-Yu Hsieh
- Material and Chemical Research Laboratories, Industrial Technology Research Institute, 31040, Hsinchu, Taiwan
| | - Wen-Wei Wu
- Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, 30010, Hsinchu, Taiwan
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21
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Wu L, Li C, Chen M, Zhang Y, Han K, Zeng S, Liu X, Ma J, Liu C, Chen J, Zhang J, Venkatesan TV, Pennycook SJ, Coey JMD, Shen L, Ma J, Wang XR, Nan CW. Interface-Induced Enhancement of Ferromagnetism in Insulating LaMnO 3 Ultrathin Films. ACS APPLIED MATERIALS & INTERFACES 2017; 9:44931-44937. [PMID: 29236463 DOI: 10.1021/acsami.7b15364] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Engineering ferromagnetism, by modulating its magnitude or anisotropy, is an important topic in the field of magnetism and spintronics. Among different types of magnetic materials, ferromagnetic insulators, in which magnetic moment unusually coexists with localized electrons, are of particular interest. Here, we report a remarkable interfacial enhancement of the ferromagnetism by adding one unit-cell LaAlO3 adjacent to an insulating LaMnO3 ultrathin film. The enhancement of ferromagnetism is explained in terms of charge transfer at the interface, as evidenced by X-ray absorption spectroscopy and ab initio calculations. This study demonstrates an effective and dramatic approach to modulate the functionality of ferromagnetic insulators, contributing to the arsenal of engineering techniques for future spintronics.
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Affiliation(s)
- Liang Wu
- School of Materials Science and Engineering, State Key Lab of New Ceramics and Fine Processing, Tsinghua University , Beijing 100084, China
| | | | - Mingfeng Chen
- School of Materials Science and Engineering, State Key Lab of New Ceramics and Fine Processing, Tsinghua University , Beijing 100084, China
| | - Yujun Zhang
- School of Materials Science and Engineering, State Key Lab of New Ceramics and Fine Processing, Tsinghua University , Beijing 100084, China
| | - Kun Han
- NUSNNI-NanoCore, National University of Singapore , Singapore 117411, Singapore
- Department of Physics, National University of Singapore , Singapore 117542, Singapore
| | - Shengwei Zeng
- NUSNNI-NanoCore, National University of Singapore , Singapore 117411, Singapore
- Department of Physics, National University of Singapore , Singapore 117542, Singapore
| | - Xin Liu
- Department of Physics, Beijing Normal University , Beijing 100875, China
| | - Ji Ma
- School of Materials Science and Engineering, State Key Lab of New Ceramics and Fine Processing, Tsinghua University , Beijing 100084, China
| | - Chen Liu
- School of Materials Science and Engineering, State Key Lab of New Ceramics and Fine Processing, Tsinghua University , Beijing 100084, China
| | - Jiahui Chen
- School of Materials Science and Engineering, State Key Lab of New Ceramics and Fine Processing, Tsinghua University , Beijing 100084, China
| | - Jinxing Zhang
- Department of Physics, Beijing Normal University , Beijing 100875, China
| | - T Venky Venkatesan
- NUSNNI-NanoCore, National University of Singapore , Singapore 117411, Singapore
- Department of Physics, National University of Singapore , Singapore 117542, Singapore
| | | | - J M D Coey
- School of Physics, Trinity College , Dublin 2, Ireland
- Faculty of Materials Science and Engineering, Beihang University , Beijing 100191, China
| | | | - Jing Ma
- School of Materials Science and Engineering, State Key Lab of New Ceramics and Fine Processing, Tsinghua University , Beijing 100084, China
| | - X Renshaw Wang
- School of Physical and Mathematical Sciences & School of Electrical and Electronic Engineering, Nanyang Technological University , Singapore 637371, Singapore
| | - Ce-Wen Nan
- School of Materials Science and Engineering, State Key Lab of New Ceramics and Fine Processing, Tsinghua University , Beijing 100084, China
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22
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Elsiddig ZA, Xu H, Wang D, Zhang W, Guo X, Zhang Y, Sun Z, Chen J. Modulating Mn4+ Ions and Oxygen Vacancies in Nonstoichiometric LaMnO3 Perovskite by a Facile Sol-Gel Method as High-Performance Supercapacitor Electrodes. Electrochim Acta 2017. [DOI: 10.1016/j.electacta.2017.09.076] [Citation(s) in RCA: 54] [Impact Index Per Article: 7.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/18/2022]
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23
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Lü W, Li C, Zheng L, Xiao J, Lin W, Li Q, Wang XR, Huang Z, Zeng S, Han K, Zhou W, Zeng K, Chen J, Cao W, Venkatesan T. Multi-Nonvolatile State Resistive Switching Arising from Ferroelectricity and Oxygen Vacancy Migration. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29:1606165. [PMID: 28439926 DOI: 10.1002/adma.201606165] [Citation(s) in RCA: 31] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/15/2016] [Revised: 03/18/2017] [Indexed: 06/07/2023]
Abstract
Resistive switching phenomena form the basis of competing memory technologies. Among them, resistive switching, originating from oxygen vacancy migration (OVM), and ferroelectric switching offer two promising approaches. OVM in oxide films/heterostructures can exhibit high/low resistive state via conducting filament forming/deforming, while the resistive switching of ferroelectric tunnel junctions (FTJs) arises from barrier height or width variation while ferroelectric polarization reverses between asymmetric electrodes. Here the authors demonstrate a coexistence of OVM and ferroelectric induced resistive switching in a BaTiO3 FTJ by comparing BaTiO3 with SrTiO3 based tunnel junctions. This coexistence results in two distinguishable loops with multi-nonvolatile resistive states. The primary loop originates from the ferroelectric switching. The second loop emerges at a voltage close to the SrTiO3 switching voltage, showing OVM being its origin. BaTiO3 based devices with controlled oxygen vacancies enable us to combine the benefits of both OVM and ferroelectric tunneling to produce multistate nonvolatile memory devices.
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Affiliation(s)
- Weiming Lü
- Condensed Matter Science and Technology Institute, Department of Physics, Harbin Institute of Technology, Harbin, 150001, China
| | - Changjian Li
- Department of Material Science & Engineering, National University of Singapore, Singapore, 117575, Singapore
- NUSNNI-Nanocore, National University of Singapore, Singapore, 117411, Singapore
| | - Limei Zheng
- Condensed Matter Science and Technology Institute, Department of Physics, Harbin Institute of Technology, Harbin, 150001, China
| | - Juanxiu Xiao
- Department of Material Science & Engineering, National University of Singapore, Singapore, 117575, Singapore
- State Key Laboratory of Marine Resource Utilization in South China Sea, Hainan University, Haikou, 570228, China
- Department of Mechanical Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Weinan Lin
- Department of Material Science & Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Qiang Li
- Condensed Matter Science and Technology Institute, Department of Physics, Harbin Institute of Technology, Harbin, 150001, China
| | - Xiao Renshaw Wang
- School of Physical and Mathematical Sciences & School of Electrical and Electronic Engineering, Nayang Technological University, Singapore, 637371, Singapore
| | - Zhen Huang
- NUSNNI-Nanocore, National University of Singapore, Singapore, 117411, Singapore
| | - Shengwei Zeng
- NUSNNI-Nanocore, National University of Singapore, Singapore, 117411, Singapore
| | - Kun Han
- NUSNNI-Nanocore, National University of Singapore, Singapore, 117411, Singapore
- Department of Physics, National University of Singapore, Singapore, 117571, Singapore
| | - Wenxiong Zhou
- NUSNNI-Nanocore, National University of Singapore, Singapore, 117411, Singapore
- Department of Physics, National University of Singapore, Singapore, 117571, Singapore
| | - Kaiyang Zeng
- Department of Mechanical Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Jingsheng Chen
- Department of Material Science & Engineering, National University of Singapore, Singapore, 117575, Singapore
- NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, Singapore, 117456, Singapore
| | - Wenwu Cao
- Condensed Matter Science and Technology Institute, Department of Physics, Harbin Institute of Technology, Harbin, 150001, China
| | - Thirumalai Venkatesan
- Department of Material Science & Engineering, National University of Singapore, Singapore, 117575, Singapore
- NUSNNI-Nanocore, National University of Singapore, Singapore, 117411, Singapore
- Department of Physics, National University of Singapore, Singapore, 117571, Singapore
- NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, Singapore, 117456, Singapore
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
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24
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Hao YJ, Liu B, Tian LG, Li FT, Ren J, Liu SJ, Liu Y, Zhao J, Wang XJ. Synthesis of {111} Facet-Exposed MgO with Surface Oxygen Vacancies for Reactive Oxygen Species Generation in the Dark. ACS APPLIED MATERIALS & INTERFACES 2017; 9:12687-12693. [PMID: 28339179 DOI: 10.1021/acsami.6b16856] [Citation(s) in RCA: 56] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Seeking a simple and moderate route to generate reactive oxygen species (ROS) for antibiosis is of great interest and challenge. This work demonstrates that molecule transition and electron rearrangement processes can directly occur only through chemisorption interaction between the adsorbed O2 and high-energy {111} facet-exposed MgO with abundant surface oxygen vacancies (SOVs), hence producing singlet oxygen and superoxide anion radicals without light irradiation. These ROS were confirmed by electron paramagnetic resonance, in situ Raman, and scavenger experiments. Furthermore, heat plays a crucial role for the electron transfer process to accelerate the formation of ·O2-, which is verified by temperature kinetic experiments of nitro blue tetrazolium reduction in the dark. Therefore, the presence of oxygen vacancy can be considered as an intensification of the activation process. The designed MgO is acquired in one step via constructing a reduction atmosphere during the combustion reaction process, which has an ability similar to that of noble metal Pd to activate molecular oxygen and can be used as an effective bacteriocide in the dark.
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Affiliation(s)
- Ying-Juan Hao
- College of Science, Hebei University of Science and Technology , Shijiazhuang 050018, China
| | - Bing Liu
- School of Chemical and Material Engineering, Jiangnan University , Wuxi 214122, China
| | - Li-Gang Tian
- College of Science, Hebei University of Science and Technology , Shijiazhuang 050018, China
| | - Fa-Tang Li
- College of Science, Hebei University of Science and Technology , Shijiazhuang 050018, China
| | - Jie Ren
- College of Science, Hebei University of Science and Technology , Shijiazhuang 050018, China
| | - Shao-Jia Liu
- College of Science, Hebei University of Science and Technology , Shijiazhuang 050018, China
| | - Ying Liu
- College of Science, Hebei University of Science and Technology , Shijiazhuang 050018, China
| | - Jun Zhao
- College of Science, Hebei University of Science and Technology , Shijiazhuang 050018, China
| | - Xiao-Jing Wang
- College of Science, Hebei University of Science and Technology , Shijiazhuang 050018, China
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25
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Study of the Surface Oxygen Vacancies Evolvement on the Single and Bi-Components Manganese Oxide Precursors and their Catalytic Performance. Catal Letters 2017. [DOI: 10.1007/s10562-017-1973-0] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/20/2022]
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26
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Ge C, Jin KJ, Zhang QH, Du JY, Gu L, Guo HZ, Yang JT, Gu JX, He M, Xing J, Wang C, Lu HB, Yang GZ. Toward Switchable Photovoltaic Effect via Tailoring Mobile Oxygen Vacancies in Perovskite Oxide Films. ACS APPLIED MATERIALS & INTERFACES 2016; 8:34590-34597. [PMID: 27936535 DOI: 10.1021/acsami.6b13203] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
The defect chemistry of perovskite oxides involves the cause to most of their abundant functional properties, including interface magnetism, charge transport, ionic exchange, and catalytic activity. The possibility to achieve dynamic control over oxygen anion vacancies offers a unique opportunity for the development of appealing switchable devices, which at present are commonly based on ferroelectric materials. Herein, we report the discovery of a switchable photovoltaic effect, that the sign of the open voltage and the short circuit current can be reversed by inverting the polarity of the applied field, upon electrically tailoring the distribution of oxygen vacancies in perovskite oxide films. This phenomenon is demonstrated in lateral photovoltaic devices based on both ferroelectric BiFeO3 and paraelectric SrTiO3 films, under a reversed applied field whose magnitude is much smaller than the coercivity value of BiFeO3. The migration of oxygen vacancies was directly observed by employing an advanced annular bright-field scanning transmission electron microscopy technique with in situ biasing equipment. We conclude that the band bending induced by the motion of oxygen vacancies is the driving force for the reversible switching between two photovoltaic states. The present work can provide an active path for the design of novel switchable photovoltaic devices with a wide range of transition metal oxides in terms of the ionic degrees of freedom.
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Affiliation(s)
- Chen Ge
- Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China
| | - Kui-Juan Jin
- Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100190, China
| | - Qing-Hua Zhang
- School of Materials Science and Engineering, State Key Lab of New Ceramics and Fine Processing, Tsinghua University , Beijing 100084, China
| | - Jian-Yu Du
- Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China
- School of Science, China University of Geosciences , Beijing 100083, China
| | - Lin Gu
- Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100190, China
| | - Hai-Zhong Guo
- Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China
| | - Jing-Ting Yang
- Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China
| | - Jun-Xing Gu
- Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China
| | - Meng He
- Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China
| | - Jie Xing
- School of Science, China University of Geosciences , Beijing 100083, China
| | - Can Wang
- Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China
| | - Hui-Bin Lu
- Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China
| | - Guo-Zhen Yang
- Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100190, China
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27
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Wang X, Hu C, Song Y, Zhao X, Zhang L, Lv Z, Wang Y, Liu Z, Wang Y, Zhang Y, Sui Y, Song B. Effect of Oxygen-deficiencies on Resistance Switching in Amorphous YFe0.5Cr0.5O3-d films. Sci Rep 2016; 6:30335. [PMID: 27452114 PMCID: PMC4959013 DOI: 10.1038/srep30335] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/17/2016] [Accepted: 07/04/2016] [Indexed: 01/02/2023] Open
Abstract
Herein, we demonstrate the contribution of the oxygen-deficiencies on the bipolar resistance switching (RS) properties of amorphous-YFe0.5Cr0.5O3-d (a-YFCO) films. The a-YFCO films were prepared under various oxygen pressures to tune the concentration of oxygen-deficiencies in the films. The XPS data verify that the oxygen-deficiencies increase with decreasing oxygen pressure. The RS property becomes more pronounced with more oxygen-deficiencies in a-YFCO films. Based on the Ohmic conduction measurements in the low resistance state, we confirm that the RS mechanism is related to the migration of oxygen-deficiencies. The enhanced RS and long retention in a-YFCO suggest a great potential for applications in nonvolatile memory devices.
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Affiliation(s)
- Xianjie Wang
- Department of Physics, Harbin Institute of Technology, Harbin 150001, China
| | - Chang Hu
- Department of Physics, Harbin Institute of Technology, Harbin 150001, China
| | - Yongli Song
- Department of Physics, Harbin Institute of Technology, Harbin 150001, China
| | - Xiaofeng Zhao
- Department of Physics, Harbin Institute of Technology, Harbin 150001, China
| | - Lingli Zhang
- Department of Physics, Harbin Institute of Technology, Harbin 150001, China
| | - Zhe Lv
- Department of Physics, Harbin Institute of Technology, Harbin 150001, China
| | - Yang Wang
- Department of Physics, Harbin Institute of Technology, Harbin 150001, China
- Academy of Fundamental and Interdisciplinary Sciences, Harbin Institute of Technology, Harbin 150001, China
| | - Zhiguo Liu
- Department of Physics, Harbin Institute of Technology, Harbin 150001, China
| | - Yi Wang
- Department of Physics, Harbin Institute of Technology, Harbin 150001, China
- Academy of Fundamental and Interdisciplinary Sciences, Harbin Institute of Technology, Harbin 150001, China
| | - Yu Zhang
- Department of Physics, Harbin Institute of Technology, Harbin 150001, China
| | - Yu Sui
- Department of Physics, Harbin Institute of Technology, Harbin 150001, China
| | - Bo Song
- Department of Physics, Harbin Institute of Technology, Harbin 150001, China
- Academy of Fundamental and Interdisciplinary Sciences, Harbin Institute of Technology, Harbin 150001, China
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28
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Switching of magnetic easy-axis using crystal orientation for large perpendicular coercivity in CoFe2O4 thin film. Sci Rep 2016; 6:30074. [PMID: 27435010 PMCID: PMC4951806 DOI: 10.1038/srep30074] [Citation(s) in RCA: 103] [Impact Index Per Article: 12.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/04/2016] [Accepted: 06/28/2016] [Indexed: 11/12/2022] Open
Abstract
Perpendicular magnetization and precise control over the magnetic easy axis in magnetic thin film is necessary for a variety of applications, particularly in magnetic recording media. A strong (111) orientation is successfully achieved in the CoFe2O4 (CFO) thin film at relatively low substrate temperature of 100 °C, whereas the (311)-preferred randomly oriented CFO is prepared at room temperature by the DC magnetron sputtering technique. The oxygen-deficient porous CFO film after post-annealing gives rise to compressive strain perpendicular to the film surface, which induces large perpendicular coercivity. We observe the coercivity of 11.3 kOe in the 40-nm CFO thin film, which is the highest perpendicular coercivity ever achieved on an amorphous SiO2/Si substrate. The present approach can guide the systematic tuning of the magnetic easy axis and coercivity in the desired direction with respect to crystal orientation in the nanoscale regime. Importantly, this can be achieved on virtually any type of substrate.
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29
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Sun Z, Zhao Y, He M, Gu L, Ma C, Jin K, Zhao D, Luo N, Zhang Q, Wang N, Duan W, Nan CW. Deterministic Role of Concentration Surplus of Cation Vacancy over Anion Vacancy in Bipolar Memristive NiO. ACS APPLIED MATERIALS & INTERFACES 2016; 8:11583-11591. [PMID: 27096884 DOI: 10.1021/acsami.6b01400] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Migration of oxygen vacancies has been proposed to play an important role in the bipolar memristive behaviors because oxygen vacancies can directly determine the local conductivity in many systems. However, a recent theoretical work demonstrated that both migration of oxygen vacancies and coexistence of cation and anion vacancies are crucial to the occurrence of bipolar memristive switching, normally observed in the small-sized NiO. So far, experimental work addressing this issue is still lacking. In this work, with conductive atomic force microscopy and combined scanning transmission electron microscopy and electron energy loss spectroscopy, we reveal that concentration surplus of Ni vacancy over O vacancy determines the bipolar memristive switching of NiO films. Our work supports the dual-defects-based model, which is of fundamental importance for understanding the memristor mechanisms beyond the well-established oxygen-vacancy-based model. Moreover, this work provides a methodology to investigate the effect of dual defects on memristive behaviors.
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Affiliation(s)
- Zhong Sun
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University , Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100084, China
| | - Yonggang Zhao
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University , Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100084, China
| | - Min He
- Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences , Beijing 100190, China
| | - Lin Gu
- Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences , Beijing 100190, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100084, China
| | - Chao Ma
- Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences , Beijing 100190, China
| | - Kuijuan Jin
- Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences , Beijing 100190, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100084, China
| | - Diyang Zhao
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University , Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100084, China
| | - Nannan Luo
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University , Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100084, China
| | - Qinghua Zhang
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University , Beijing 100084, China
| | - Na Wang
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University , Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100084, China
| | - Wenhui Duan
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University , Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100084, China
| | - Ce-Wen Nan
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University , Beijing 100084, China
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30
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Wang H, Zhu B, Ma X, Hao Y, Chen X. Physically Transient Resistive Switching Memory Based on Silk Protein. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2016; 12:2715-9. [PMID: 27028213 DOI: 10.1002/smll.201502906] [Citation(s) in RCA: 58] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/24/2015] [Revised: 01/17/2016] [Indexed: 05/21/2023]
Abstract
Physically transient resistive switching devices based on silk protein are successfully demonstrated. The devices can be absolutely dissolved in deionized water or in phosphate-buffered saline in 2 h. At the same time, a reasonable resistance OFF/ON ratio of larger than 10(2) and a retention time of more than 10(4) s are achieved for nonvolatile memory applications.
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Affiliation(s)
- Hong Wang
- School of Advanced Materials and Nanotechnology, Key Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, China
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798
| | - Bowen Zhu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798
| | - Xiaohua Ma
- School of Advanced Materials and Nanotechnology, Key Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, China
| | - Yue Hao
- School of Advanced Materials and Nanotechnology, Key Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, China
| | - Xiaodong Chen
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798
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31
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Wang L, Dash S, Chang L, You L, Feng Y, He X, Jin KJ, Zhou Y, Ong HG, Ren P, Wang S, Chen L, Wang J. Oxygen Vacancy Induced Room-Temperature Metal-Insulator Transition in Nickelate Films and Its Potential Application in Photovoltaics. ACS APPLIED MATERIALS & INTERFACES 2016; 8:9769-9776. [PMID: 27025257 DOI: 10.1021/acsami.6b00650] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Oxygen vacancy is intrinsically coupled with magnetic, electronic, and transport properties of transition-metal oxide materials and directly determines their multifunctionality. Here, we demonstrate reversible control of oxygen content by postannealing at temperature lower than 300 °C and realize the reversible metal-insulator transition in epitaxial NdNiO₃ films. Importantly, over 6 orders of magnitude in the resistance modulation and a large change in optical bandgap are demonstrated at room temperature without destroying the parent framework and changing the p-type conductive mechanism. Further study revealed that oxygen vacancies stabilized the insulating phase at room temperature is universal for perovskite nickelate films. Acting as electron donors, oxygen vacancies not only stabilize the insulating phase at room temperature, but also induce a large magnetization of ∼50 emu/cm³ due to the formation of strongly correlated Ni²⁺ t(2g)⁶e(g)² states. The bandgap opening is an order of magnitude larger than that of the thermally driven metal-insulator transition and continuously tunable. Potential application of the newly found insulating phase in photovoltaics has been demonstrated in the nickelate-based heterojunctions. Our discovery opens up new possibilities for strongly correlated perovskite nickelates.
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Affiliation(s)
- Le Wang
- School of Materials Science and Engineering, Nanyang Technological University , 639798, Singapore
| | - Sibashisa Dash
- School of Materials Science and Engineering, Nanyang Technological University , 639798, Singapore
| | - Lei Chang
- School of Materials Science and Engineering, Nanyang Technological University , 639798, Singapore
| | - Lu You
- School of Materials Science and Engineering, Nanyang Technological University , 639798, Singapore
| | - Yaqing Feng
- Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China
| | - Xu He
- Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China
| | - Kui-juan Jin
- Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100190, China
| | - Yang Zhou
- School of Materials Science and Engineering, Nanyang Technological University , 639798, Singapore
| | - Hock Guan Ong
- Temasek Laboratories@NTU, Nanyang Technological University , 637553, Singapore
| | - Peng Ren
- School of Materials Science and Engineering, Nanyang Technological University , 639798, Singapore
| | - Shiwei Wang
- School of Materials Science and Engineering, Nanyang Technological University , 639798, Singapore
| | - Lang Chen
- Department of Physics, South University of Science and Technology of China , Shen Zhen 518055, China
| | - Junling Wang
- School of Materials Science and Engineering, Nanyang Technological University , 639798, Singapore
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32
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Tian Y, Zhang J, Guo CF, Zhang B, Liu Q. Photoconductive probing of the trap distribution in switchable interfaces. NANOSCALE 2016; 8:915-920. [PMID: 26660900 DOI: 10.1039/c5nr06231d] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Interfacial resistive switching features are highly dependent on the distribution of the carrier traps in the interface. However, the lack of probing seriously restricts ways of offering physical insights into its mechanism and improving interfacial resistors. In this work, we investigated a resistive switching interface that consists of Bi2S3 nano networks (BSNN) and F-doped SnO2 (FTO), uncovering the relationship between the decay of the photoconductance in BSNN and interfacial trap distribution. Based on this, we suggest a general method to probe the distribution of various interface traps. This method provides us with a new tool to study the interfacial trap distribution in an interfacial resistor, and it might also be used to understand other interface problems.
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Affiliation(s)
- Ye Tian
- Suzhou Institute of Nano-tech and Nano-bionics (SINANO), Chinese Academy of Sciences, 212213, Suzhou, China. and School of communication and electronics engineering, Hunan City University, 413000, Yiyang, China
| | - Jianming Zhang
- Suzhou Institute of Nano-tech and Nano-bionics (SINANO), Chinese Academy of Sciences, 212213, Suzhou, China. and Suzhou HWN Nanotec.Co., LTD, 212213, Suzhou, China
| | - Chuan Fei Guo
- Department of Physics and TcSUH, University of Houston, Houston, Texas 77204, USA
| | - Baoshun Zhang
- Suzhou Institute of Nano-tech and Nano-bionics (SINANO), Chinese Academy of Sciences, 212213, Suzhou, China.
| | - Qian Liu
- National Center for Nanoscience and Technology (NCNST), No. 11, Beiyitiao, Zhongguancun, 100190, Beijing, China.
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33
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You T, Ou X, Niu G, Bärwolf F, Li G, Du N, Bürger D, Skorupa I, Jia Q, Yu W, Wang X, Schmidt OG, Schmidt H. Engineering interface-type resistive switching in BiFeO3 thin film switches by Ti implantation of bottom electrodes. Sci Rep 2015; 5:18623. [PMID: 26692104 PMCID: PMC4686890 DOI: 10.1038/srep18623] [Citation(s) in RCA: 20] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/28/2015] [Accepted: 10/30/2015] [Indexed: 11/09/2022] Open
Abstract
BiFeO3 based MIM structures with Ti-implanted Pt bottom electrodes and Au top electrodes have been fabricated on Sapphire substrates. The resulting metal-insulator-metal (MIM) structures show bipolar resistive switching without an electroforming process. It is evidenced that during the BiFeO3 thin film growth Ti diffuses into the BiFeO3 layer. The diffused Ti effectively traps and releases oxygen vacancies and consequently stabilizes the resistive switching in BiFeO3 MIM structures. Therefore, using Ti implantation of the bottom electrode, the retention performance can be greatly improved with increasing Ti fluence. For the used raster-scanned Ti implantation the lateral Ti distribution is not homogeneous enough and endurance slightly degrades with Ti fluence. The local resistive switching investigated by current sensing atomic force microscopy suggests the capability of down-scaling the resistive switching cell to one BiFeO3 grain size by local Ti implantation of the bottom electrode.
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Affiliation(s)
- Tiangui You
- State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 20050, P. R. China.,Material Systems for Nanoelectronics, Technische Universität Chemnitz, Chemnitz 09126, Germany
| | - Xin Ou
- State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 20050, P. R. China
| | - Gang Niu
- IHP, Im Technologiepark 25, Frankfurt (Oder) 15236, Germany
| | | | - Guodong Li
- Material Systems for Nanoelectronics, Technische Universität Chemnitz, Chemnitz 09126, Germany.,Institute for Integrative Nanosciences, IFW Dresden, Dresden 01069, Germany
| | - Nan Du
- Material Systems for Nanoelectronics, Technische Universität Chemnitz, Chemnitz 09126, Germany
| | - Danilo Bürger
- Material Systems for Nanoelectronics, Technische Universität Chemnitz, Chemnitz 09126, Germany
| | - Ilona Skorupa
- Material Systems for Nanoelectronics, Technische Universität Chemnitz, Chemnitz 09126, Germany.,HZDR Innovation GmbH, Dresden 01328, Germany
| | - Qi Jia
- State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 20050, P. R. China
| | - Wenjie Yu
- State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 20050, P. R. China
| | - Xi Wang
- State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 20050, P. R. China
| | - Oliver G Schmidt
- Material Systems for Nanoelectronics, Technische Universität Chemnitz, Chemnitz 09126, Germany.,Institute for Integrative Nanosciences, IFW Dresden, Dresden 01069, Germany
| | - Heidemarie Schmidt
- Material Systems for Nanoelectronics, Technische Universität Chemnitz, Chemnitz 09126, Germany
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34
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Guo Z, Li MQ, Liu JH, Huang XJ. Cation Exchange Synthesis and Unusual Resistive Switching Behaviors of Ag2Se Nanobelts. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2015; 11:6285-6294. [PMID: 26509434 DOI: 10.1002/smll.201501689] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/13/2015] [Revised: 08/08/2015] [Indexed: 06/05/2023]
Abstract
Ag2Se nanobelts are prepared through employing ZnSe nanobelts as templates via a facile cation exchange approach. The templates are derived from precursor ZnSe·0.5N2 H4 nanobelts, which are synthesized by a simple hydrothermal method. As-synthesized precursor nanobelts are with 200 nm in width and several hundreds of micrometers in length. Annealed in N2 , they are transformed into ZnSe nanobelts with preserving their initial morphology. Following with a complete replacement of Zn(2+) by Ag(+), Ag2Se nanobelts with single crystalline are obtained via a cation-exchange reaction. Combined with the Langmuir-Blodgett assembly technique, regular films of ZnSe nanobelts can be achieved on transparent glass substrates and Si wafers with interdigital Au electrode arrays. Further, the optical and electrical evolutions are investigated from ZnSe nanobelts to Ag2 Se nanobelts. Finally, the resistive switching characteristic are carefully explored for Ag2Se nanobelts regularly arranged on interdigital Au microelectrodes. The results indicate that it is analogous to complementary resistive switching behaviors, which is different from that of traditional two terminal devices about previously reported Ag2Se. In order to clarify this phenomenon, a possible mechanism has been proposed and indirectly demonstrated through in situ SEM (scanning electron microscropy) observation.
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Affiliation(s)
- Zheng Guo
- Nanomaterials and Environmental Detection Laboratory, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Min-Qiang Li
- Nanomaterials and Environmental Detection Laboratory, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Jin-Huai Liu
- Nanomaterials and Environmental Detection Laboratory, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Xing-Jiu Huang
- Nanomaterials and Environmental Detection Laboratory, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, P. R. China
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35
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Xiong YQ, Zhou WP, Li Q, Cao QQ, Tang T, Wang DH, Du YW. Electric field modification of magnetism in Au/La2/3Ba1/3MnO3/Pt device. Sci Rep 2015; 5:12766. [PMID: 26238932 PMCID: PMC4523834 DOI: 10.1038/srep12766] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/13/2015] [Accepted: 07/07/2015] [Indexed: 11/09/2022] Open
Abstract
The La2/3Ba1/3MnO3 film is deposited in a CMOS-compatible Pt/Ti/SiO2/Si substrate with the oxygen pressure of 10 Pa for investigating magnetoelectric effect. Bipolar resistive switching effect with excellent endurance and retention is observed in this Au/La2/3Ba1/3MnO3/Pt device. Through this effect, a significant nonvolatile change of magnetization is obtained in this device as well. The change of magnetization can be understood by the break and repair of the -Mn3+-O2−-Mn4+- chains induced by the electric field through the oxygen vacancies migration. The resistance and magnetization of the Au/La2/3Ba1/3MnO3/Pt device can be simultaneously manipulated by the electric field, which makes it to be a promising candidate for the multifunctional memory devices.
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Affiliation(s)
- Y Q Xiong
- 1] Jiangsu Key Laboratory for Nano Technology and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China [2] Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - W P Zhou
- 1] Jiangsu Key Laboratory for Nano Technology and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China [2] Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Q Li
- 1] Jiangsu Key Laboratory for Nano Technology and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China [2] Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Q Q Cao
- 1] Jiangsu Key Laboratory for Nano Technology and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China [2] Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - T Tang
- Jiangsu Key Laboratory for Nano Technology and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - D H Wang
- 1] Jiangsu Key Laboratory for Nano Technology and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China [2] Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Y W Du
- 1] Jiangsu Key Laboratory for Nano Technology and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China [2] Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
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36
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Lei W, Zhang T, Gu L, Liu P, Rodriguez JA, Liu G, Liu M. Surface-Structure Sensitivity of CeO2 Nanocrystals in Photocatalysis and Enhancing the Reactivity with Nanogold. ACS Catal 2015. [DOI: 10.1021/acscatal.5b00620] [Citation(s) in RCA: 139] [Impact Index Per Article: 15.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/19/2022]
Affiliation(s)
- Wanying Lei
- National Center
for Nanoscience and Technology, Beijing 100190, China
| | - Tingting Zhang
- National Center
for Nanoscience and Technology, Beijing 100190, China
| | - Lin Gu
- Beijing
National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Ping Liu
- Chemistry
Department, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - José A. Rodriguez
- Chemistry
Department, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Gang Liu
- National Center
for Nanoscience and Technology, Beijing 100190, China
| | - Minghua Liu
- National Center
for Nanoscience and Technology, Beijing 100190, China
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37
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Liu M, Ren S, Lu J, Ma C, Xu X, Chen C. Surface-step-terrace tuned magnetic properties of epitaxial LaBaCo 2O 5.5+δthin films on vicinal (La,Sr)(Al,Ta)O 3substrates. CrystEngComm 2015. [DOI: 10.1039/c5ce01575h] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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38
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You T, Du N, Slesazeck S, Mikolajick T, Li G, Bürger D, Skorupa I, Stöcker H, Abendroth B, Beyer A, Volz K, Schmidt OG, Schmidt H. Bipolar electric-field enhanced trapping and detrapping of mobile donors in BiFeO3 memristors. ACS APPLIED MATERIALS & INTERFACES 2014; 6:19758-19765. [PMID: 25366867 DOI: 10.1021/am504871g] [Citation(s) in RCA: 17] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Pulsed laser deposited Au-BFO-Pt/Ti/Sapphire MIM structures offer excellent bipolar resistive switching performance, including electroforming free, long retention time at 358 K, and highly stable endurance. Here we develop a model on modifiable Schottky barrier heights and elucidate the physical origin underlying resistive switching in BiFeO3 memristors containing mobile oxygen vacancies. Increased switching speed is possible by applying a large amplitude writing pulse as the resistive switching is tunable by both the amplitude and length of the writing pulse. The local resistive switching has been investigated by conductive atomic force microscopy and exhibits the capability of down-scaling the resistive switching cell to the grain size.
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Affiliation(s)
- Tiangui You
- Material Systems for Nanoelectronics, Technische Universität Chemnitz , Chemnitz 09126, Germany
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39
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Yao L, Majumdar S, Äkäslompolo L, Inkinen S, Qin QH, van Dijken S. Electron-beam-induced Perovskite-Brownmillerite-Perovskite structural phase transitions in epitaxial La2/3Sr1/3MnO3 films. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2014; 26:2789-2793. [PMID: 24554587 DOI: 10.1002/adma.201305656] [Citation(s) in RCA: 35] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/15/2013] [Revised: 12/17/2013] [Indexed: 06/03/2023]
Abstract
Structural phase transitions driven by oxygen-vacancy ordering can drastically affect the properties of transition metal oxides. The focused electron beam of a transmission electron microscope (TEM) can be used to control structural phase transitions in epitaxial La2/3Sr1/3MnO3. The ability to induce and characterize oxygen-deficient structural phases simultaneously in a continuous and controllable manner opens up new pathways for atomic-scale studies of transition metal oxides and other complex materials.
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Affiliation(s)
- Lide Yao
- NanoSpin, Department of Applied Physics, Aalto University School of Science, P.O. Box, 15100, FI-00076, Aalto, Finland
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40
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Yang Y, Lü W, Yao Y, Sun J, Gu C, Gu L, Wang Y, Duan X, Yu R. In situ TEM observation of resistance switching in titanate based device. Sci Rep 2014; 4:3890. [PMID: 24463532 PMCID: PMC3902442 DOI: 10.1038/srep03890] [Citation(s) in RCA: 28] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/12/2013] [Accepted: 01/06/2014] [Indexed: 11/08/2022] Open
Abstract
After decades of efforts, the research on resistance switching (RS) behavior in transition metal oxides has shifted to the stage of verifying the proposed models by direct experimental evidences. In this paper, RS behavior and oxygen content variation of La0.85Sr0.15TiO3/SrTiO3:Nb (LSTO/STON) were investigated by in situ transmission electron microscopy observation and in situ electron energy loss spectrum characterization under external electric field. The oxygen content fluctuation adjusted by applied bias has been investigated and the observed results imply the conductive channels should be formed by the oxygen vacancy at the Pt/LSTO interface. Moreover, in situ TEM characterization displays the advantage - to reveal the origin of various RS behaviors.
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Affiliation(s)
- Yang Yang
- Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Weiming Lü
- Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Yuan Yao
- Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Jirong Sun
- Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Changzhi Gu
- Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Lin Gu
- Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Yanguo Wang
- Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Xiaofeng Duan
- Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Richeng Yu
- Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China
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41
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Ruiz-Zepeda F, Ma C, Bahena Uribe D, Cantu-Valle J, Wang H, Xu X, Yacaman MJ, Chen C, Lorenz B, Jacobson AJ, Chu PCW, Ponce A. Nanodomain induced anomalous magnetic and electronic transport properties of LaBaCo 2O 5.5+δ highly epitaxial thin films. JOURNAL OF APPLIED PHYSICS 2014; 115:24301. [PMID: 24453381 PMCID: PMC3888456 DOI: 10.1063/1.4861406] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/30/2013] [Accepted: 12/20/2013] [Indexed: 06/01/2023]
Abstract
A giant magnetoresistance effect (∼46% at 20 K under 7 T) and anomalous magnetic properties were found in a highly epitaxial double perovskite LaBaCo2O5.5+δ (LBCO) thin film on (001) MgO. Aberration-corrected Electron Microscopy and related analytical techniques were employed to understand the nature of these unusual physical properties. The as-grown film is epitaxial with the c-axis of the LBCO structure lying in the film plane and with an interface relationship given by (100)LBCO || (001)MgO and [001]LBCO || [100]MgO or [010]MgO. Orderly oxygen vacancies were observed by line profile electron energy loss spectroscopy and by atomic resolution imaging. Especially, oxygen vacancy and nanodomain structures were found to have a crucial effect on the electronic transport and magnetic properties.
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42
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Wang J, Leroy J, Niu G, Saint-Girons G, Gautier B, Vilquin B, Barrett N. Chemistry and structure of BaTiO3 ultra-thin films grown by different O2 plasma power. Chem Phys Lett 2014. [DOI: 10.1016/j.cplett.2013.12.030] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/25/2022]
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43
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Findlay S, Kohno Y, Cardamone L, Ikuhara Y, Shibata N. Enhanced light element imaging in atomic resolution scanning transmission electron microscopy. Ultramicroscopy 2014; 136:31-41. [DOI: 10.1016/j.ultramic.2013.07.019] [Citation(s) in RCA: 33] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/28/2013] [Revised: 07/21/2013] [Accepted: 07/25/2013] [Indexed: 11/27/2022]
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44
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Huang H, Luo Z, Yang Y, Yang M, Wang H, Pan G, Lu Y, Gao C. The effect of growth oxygen pressure on the metal–insulator transition of ultrathin Sm0.6Nd0.4NiO3−δepitaxial films. RSC Adv 2014. [DOI: 10.1039/c4ra09535a] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Ultrathin Sm0.6Nd0.4NiO3−δepitaxial films were deposited by pulsed laser deposition (PLD) onto LaAlO3(LAO) single crystal substrates. TheTMIof the SNNO films remarkably decreases with the decrease of the growth oxygen pressure, while the strain state varied slightly.
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Affiliation(s)
- Haoliang Huang
- Department of Physics
- University of Science and Technology of China
- Hefei, China
- National Synchrotron Radiation Laboratory & Collaborative Innovation Centre of Chemistry for Energy Materials
- University of Science and Technology of China
| | - Zhenlin Luo
- National Synchrotron Radiation Laboratory & Collaborative Innovation Centre of Chemistry for Energy Materials
- University of Science and Technology of China
- Hefei, China
- CAS Key Laboratory of Materials for Energy Conversion
- Department of Materials Science and Engineering
| | - Yuanjun Yang
- National Synchrotron Radiation Laboratory & Collaborative Innovation Centre of Chemistry for Energy Materials
- University of Science and Technology of China
- Hefei, China
- CAS Key Laboratory of Materials for Energy Conversion
- Department of Materials Science and Engineering
| | - Mengmeng Yang
- National Synchrotron Radiation Laboratory & Collaborative Innovation Centre of Chemistry for Energy Materials
- University of Science and Technology of China
- Hefei, China
- CAS Key Laboratory of Materials for Energy Conversion
- Department of Materials Science and Engineering
| | - Haibo Wang
- National Synchrotron Radiation Laboratory & Collaborative Innovation Centre of Chemistry for Energy Materials
- University of Science and Technology of China
- Hefei, China
- CAS Key Laboratory of Materials for Energy Conversion
- Department of Materials Science and Engineering
| | - Guoqiang Pan
- National Synchrotron Radiation Laboratory & Collaborative Innovation Centre of Chemistry for Energy Materials
- University of Science and Technology of China
- Hefei, China
| | - Yalin Lu
- CAS Key Laboratory of Materials for Energy Conversion
- Department of Materials Science and Engineering
- University of Science and Technology of China
- Hefei, China
| | - Chen Gao
- Department of Physics
- University of Science and Technology of China
- Hefei, China
- National Synchrotron Radiation Laboratory & Collaborative Innovation Centre of Chemistry for Energy Materials
- University of Science and Technology of China
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45
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Zoolfakar AS, Ab Kadir R, Rani RA, Balendhran S, Liu X, Kats E, Bhargava SK, Bhaskaran M, Sriram S, Zhuiykov S, O'Mullane AP, Kalantar-Zadeh K. Engineering electrodeposited ZnO films and their memristive switching performance. Phys Chem Chem Phys 2013; 15:10376-84. [PMID: 23680815 DOI: 10.1039/c3cp44451a] [Citation(s) in RCA: 46] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
We report the influence of zinc oxide (ZnO) seed layers on the performance of ZnO-based memristive devices fabricated using an electrodeposition approach. The memristive element is based on a sandwich structure using Ag and Pt electrodes. The ZnO seed layer is employed to tune the morphology of the electrodeposited ZnO films in order to increase the grain boundary density as well as construct highly ordered arrangements of grain boundaries. Additionally, the seed layer also assists in optimizing the concentration of oxygen vacancies in the films. The fabricated devices exhibit memristive switching behaviour with symmetrical and asymmetrical hysteresis loops in the absence and presence of ZnO seed layers, respectively. A modest concentration of oxygen vacancy in electrodeposited ZnO films as well as an increase in the ordered arrangement of grain boundaries leads to higher switching ratios in Ag/ZnO/Pt devices.
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Affiliation(s)
- Ahmad Sabirin Zoolfakar
- School of Electrical and Computer Engineering, RMIT University, Melbourne, VIC 3001, Australia.
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