1
|
Shi J, Lin Y, Wang Z, Shan X, Tao Y, Zhao X, Xu H, Liu Y. Adaptive Processing Enabled by Sodium Alginate Based Complementary Memristor for Neuromorphic Sensory System. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2314156. [PMID: 38822705 DOI: 10.1002/adma.202314156] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/25/2023] [Revised: 05/20/2024] [Indexed: 06/03/2024]
Abstract
Adaptive processing allows sensory systems to autonomically adjust their sensitivity with exposure to a constant sensory stimulus and thus organisms to adapt to environmental variations. Bioinspired electronics with adaptive functions are highly desirable for the development of neuromorphic sensory systems (NSSs). Herein, the functions of desensitization and sensitivity changing with background intensity (i.e., Weber's law), as two fundamental cues of sensory adaptation, are biorealistically demonstrated in an Ag nanowire (NW)-embedded sodium alginate (SA) based complementary memristor. In particular, Weber's law is experimentally emulated in a single complementary memristor. Furthermore, three types of adaptive NSS unit are constructed to realize a multiple perceptual capability that processes the stimuli of illuminance, temperature, and pressure signals. Taking neuromorphic vision as an example, scotopic and photopic adaptation functions are well reproduced for image enhancement against dark and bright backgrounds. Importantly, an NSS system with multisensory integration function is demonstrated by combining light and pressure spikes, where the accuracy of pattern recognition is obviously enhanced relative to that of an individual sense. This work offers a new strategy for developing neuromorphic electronics with adaptive functions and paves the way toward developing a highly efficient NSS.
Collapse
Affiliation(s)
- Jiajuan Shi
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, P. R. China
| | - Ya Lin
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, P. R. China
| | - Zhongqiang Wang
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, P. R. China
| | - Xuanyu Shan
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, P. R. China
| | - Ye Tao
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, P. R. China
| | - Xiaoning Zhao
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, P. R. China
| | - Haiyang Xu
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, P. R. China
| | - Yichun Liu
- Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun, 130024, P. R. China
| |
Collapse
|
2
|
Yan J, Armstrong JPK, Scarpa F, Perriman AW. Hydrogel-Based Artificial Synapses for Sustainable Neuromorphic Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2403937. [PMID: 39087845 DOI: 10.1002/adma.202403937] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/17/2024] [Revised: 06/16/2024] [Indexed: 08/02/2024]
Abstract
Hydrogels find widespread applications in biomedicine because of their outstanding biocompatibility, biodegradability, and tunable material properties. Hydrogels can be chemically functionalized or reinforced to respond to physical or chemical stimulation, which opens up new possibilities in the emerging field of intelligent bioelectronics. Here, the state-of-the-art in functional hydrogel-based transistors and memristors is reviewed as potential artificial synapses. Within these systems, hydrogels can serve as semisolid dielectric electrolytes in transistors and as switching layers in memristors. These synaptic devices with volatile and non-volatile resistive switching show good adaptability to external stimuli for short-term and long-term synaptic memory effects, some of which are integrated into synaptic arrays as artificial neurons; although, there are discrepancies in switching performance and efficacy. By comparing different hydrogels and their respective properties, an outlook is provided on a new range of biocompatible, environment-friendly, and sustainable neuromorphic hardware. How potential energy-efficient information storage and processing can be achieved using artificial neural networks with brain-inspired architecture for neuromorphic computing is described. The development of hydrogel-based artificial synapses can significantly impact the fields of neuromorphic bionics, biometrics, and biosensing.
Collapse
Affiliation(s)
- Jiongyi Yan
- School of Cellular and Molecular Medicine, University of Bristol, Bristol, BS8 1TD, UK
| | - James P K Armstrong
- Department of Translational Health Sciences, Bristol Medical School, University of Bristol, Bristol, BS1 3NY, UK
| | - Fabrizio Scarpa
- Bristol Composites Institute, School of Civil, Aerospace and Design Engineering (CADE), University of Bristol, University Walk, Bristol, BS8 1TR, UK
| | - Adam W Perriman
- School of Cellular and Molecular Medicine, University of Bristol, Bristol, BS8 1TD, UK
- Research School of Chemistry, Australian National University, Canberra, Australian Capital Territory, 2601, Australia
- John Curtin School of Medical Research, Australian National University, Canberra, Australian Capital Territory, 2601, Australia
| |
Collapse
|
3
|
Liu L, Ji W, He W, Cheng Y, Hao R, Hao P, Dong H, Ding X, Lei S, Han B, Hu W. Rational Design of Fluorinated 2D Polymer Film Based on Donor-Accepter Architecture toward Multilevel Memory Device for Neuromorphic Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2405328. [PMID: 39021267 DOI: 10.1002/adma.202405328] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/15/2024] [Revised: 06/26/2024] [Indexed: 07/20/2024]
Abstract
Fluorine-containing 2D polymer (F-2DP) film is a desired system to regulate the charge transport in organic electronics but rather rarely reports due to the limited fluorine-containing building blocks and difficulties in synthesis. Herein, a novel polar molecule with antiparallel columnar stacking is synthesized and further embedded into an F-2DP system to control over the crystallinity of F-2DP film through self-complementary π-electronic forces. The donor-accepter-accepter'-donor' (D-A-A'-D') structure regulates the charge transportation efficiently, inducing multilevel memory behavior through stepwise charge capture and transfer processes. Thus, the device exhibits ternary memory behavior with low threshold voltage (Vth1 of 1.1 V, Vth2 of 2.0 V), clearly distinguishable resistance states (1:102:104) and ternary yield (83%). Furthermore, the stepwise formation of the charge complex endows the device with a wider range to regulate the conductive state, which allows its application in brain-inspired neuromorphic computing. Modified National Institute of Standards and Technology recognition can reach an accuracy of 86%, showing great potential in neuromorphic computing applications in the post-Moore era.
Collapse
Affiliation(s)
- Lei Liu
- Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science & Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin University, Tianjin, 300072, P. R. China
- Beijing National Laboratory for Molecular Science, Key Laboratory of Organic Solids, Institution of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Wenyan Ji
- Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science & Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin University, Tianjin, 300072, P. R. China
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Weixin He
- Joint School of the National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou, 350207, China
| | - Yuanzhe Cheng
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Ruisha Hao
- Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science & Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin University, Tianjin, 300072, P. R. China
| | - Pengyuan Hao
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Huanli Dong
- Beijing National Laboratory for Molecular Science, Key Laboratory of Organic Solids, Institution of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xuesong Ding
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Shengbin Lei
- Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science & Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin University, Tianjin, 300072, P. R. China
- School of Chemistry and Chemical Engineering, Lanzhou Jiaotong University, Lanzhou, 730070, China
| | - Baohang Han
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Wenping Hu
- Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science & Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin University, Tianjin, 300072, P. R. China
| |
Collapse
|
4
|
Diao Y, Yang F, Jia Y, Su M, Hu J, Sun J, Jiang D, Wang D, Pu Y, Zhao Y, Sun B. Transmission Mechanism and Logical Operation of Graphene-Doped Poly(vinyl alcohol) Composite-Based Memristor. ACS APPLIED MATERIALS & INTERFACES 2024; 16:2477-2488. [PMID: 38185994 DOI: 10.1021/acsami.3c14581] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/09/2024]
Abstract
Memristors are considered the best candidates for nonvolatile memory and advanced computing technologies, and polymer and two-dimensional (2D) materials have been developed as functional layer materials in memristors with high-performance resistive switching characteristics. In this work, a polymer memristor with a graphene (Gr)-doped poly(vinyl alcohol) (PVA) composite acting as the functional layer was prepared. The memristor device exhibited superior performance with good retention and a comparatively large ON/OFF ratio at room temperature. Additionally, excellent logic operations were achieved. These satisfactory properties can be attributed to trap-induced carrier trapping and detrapping. In addition, the device exhibited stable bipolar resistive switching behavior over a moderate temperature range. This work provides insight into the transmission mechanism of polymer-based memristors and the reasons why they become unstable at high temperatures, demonstrating the potential applications of PVA-Gr-based polymer memristors as logic circuit units in integrated chips and artificial intelligence.
Collapse
Affiliation(s)
- Yangmin Diao
- School of Materials Science and Engineering, Key Laboratory of Advanced Technology of Materials (Ministry of Education of China), Southwest Jiaotong University, Chengdu 610031, China
| | - Feng Yang
- Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle (Ministry of Education of China), School of Electrical Engineering, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
| | - Yongfang Jia
- School of Materials Science and Engineering, Key Laboratory of Advanced Technology of Materials (Ministry of Education of China), Southwest Jiaotong University, Chengdu 610031, China
| | - Minghui Su
- School of Materials Science and Engineering, Key Laboratory of Advanced Technology of Materials (Ministry of Education of China), Southwest Jiaotong University, Chengdu 610031, China
| | - Junda Hu
- Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle (Ministry of Education of China), School of Electrical Engineering, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
| | - Jianwei Sun
- School of Materials Science and Engineering, Key Laboratory of Advanced Technology of Materials (Ministry of Education of China), Southwest Jiaotong University, Chengdu 610031, China
| | - Dongheng Jiang
- School of Materials Science and Engineering, Key Laboratory of Advanced Technology of Materials (Ministry of Education of China), Southwest Jiaotong University, Chengdu 610031, China
| | - Dan Wang
- State Key Laboratory of Organic - Inorganic Composites, Beijing University of Chemical Technology, Beijing 100029, China
| | - Yuan Pu
- State Key Laboratory of Organic - Inorganic Composites, Beijing University of Chemical Technology, Beijing 100029, China
| | - Yong Zhao
- Key Laboratory of Magnetic Suspension Technology and Maglev Vehicle (Ministry of Education of China), School of Electrical Engineering, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
- Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian 350117, China
| | - Bai Sun
- Frontier Institute of Science and Technology (FIST), Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
| |
Collapse
|
5
|
Shaikh MTAS, Nguyen THV, Jeon HJ, Prasad CV, Kim KJ, Jo ES, Kim S, Rim YS. Multilevel Reset Dependent Set of a Biodegradable Memristor with Physically Transient. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2306206. [PMID: 38032140 PMCID: PMC10811477 DOI: 10.1002/advs.202306206] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2023] [Revised: 10/23/2023] [Indexed: 12/01/2023]
Abstract
The electronic device, with its biocompatibility, biodegradability, and ease of fabrication process, shows great potential to embed into health monitoring and hardware data security systems. Herein, polyvinylpyrrolidone (PVP) biopolymer is presented as an active layer, electrochemically active magnesium (Mg) as a metal electrode, and chitosan-based substrate (CHS) to fabricate biocompatible and biodegradable physically transient neuromorphic device (W/Mg/PVP/Mg/CHS). The I-V curve of device is non-volatile bipolar in nature and shows a unique compliance-induced multilevel RESET-dependent-SET behavior while sweeping the compliance current from a few microamperes to milliamperes. Non-volatile and stable switching properties are demonstrated with a long endurance test (100 sweeps) and retention time of over 104 s. The physically transient memristor (PTM) has remarkably high dynamic RON /ROFF (ON/OFF state resistance) ratio (106 Ω), and when placed in deionized (DI) water, the device is observed to completely dissolve within 10 min. The pulse transient measurements demonstrate the neuromorphic computation capabilities of the device in the form of excitatory post synaptic current (EPSC), potentiation, depression, and learning behavior, which resemble the biological function of neurons. The results demonstrate the potential of W/Mg/PVP/Mg/CHS device for use in future healthcare and physically transient electronics.
Collapse
Affiliation(s)
- Mohammad Tauquir Alam Shamim Shaikh
- Department of Semiconductor Systems Engineering and Institute of Semiconductor and System ICSejong UniversitySeoul05006Republic of Korea
- Department of Intelligent Mechatronics Engineering and Convergence Engineering for Intelligent DroneSejong UniversitySeoul05006Republic of Korea
| | - Tan Hoang Vu Nguyen
- Department of Intelligent Mechatronics Engineering and Convergence Engineering for Intelligent DroneSejong UniversitySeoul05006Republic of Korea
| | - Ho Jung Jeon
- Department of Semiconductor Systems Engineering and Institute of Semiconductor and System ICSejong UniversitySeoul05006Republic of Korea
- Department of Intelligent Mechatronics Engineering and Convergence Engineering for Intelligent DroneSejong UniversitySeoul05006Republic of Korea
| | - Chowdam Venkata Prasad
- Department of Intelligent Mechatronics Engineering and Convergence Engineering for Intelligent DroneSejong UniversitySeoul05006Republic of Korea
| | - Kyong Jae Kim
- Department of Intelligent Mechatronics Engineering and Convergence Engineering for Intelligent DroneSejong UniversitySeoul05006Republic of Korea
| | - Eun Seo Jo
- Department of Semiconductor Systems Engineering and Institute of Semiconductor and System ICSejong UniversitySeoul05006Republic of Korea
| | - Sangmo Kim
- Department of Intelligent Mechatronics Engineering and Convergence Engineering for Intelligent DroneSejong UniversitySeoul05006Republic of Korea
| | - You Seung Rim
- Department of Semiconductor Systems Engineering and Institute of Semiconductor and System ICSejong UniversitySeoul05006Republic of Korea
- Department of Intelligent Mechatronics Engineering and Convergence Engineering for Intelligent DroneSejong UniversitySeoul05006Republic of Korea
| |
Collapse
|
6
|
Kim Y, An JS, Lee D, Ryu SY, Hwang YC, Kim DH, Kim TW. Biocompatible memristive device based on an agarose@gold nanoparticle-nanocomposite layer obtained from nature for neuromorphic computing. Sci Rep 2023; 13:6491. [PMID: 37081006 PMCID: PMC10119280 DOI: 10.1038/s41598-023-32860-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/16/2022] [Accepted: 04/04/2023] [Indexed: 04/22/2023] Open
Abstract
Natural, organic, materials-based artificial synaptic devices have been in the spotlight for wearable/flexible devices due to their lightweight, biocompatibility, and scalability. In this study, an electronic memristive device based on agarose extracted from plants in the Rhodophyceae class was fabricated, and its memory characteristics and analog data processing capabilities were evaluated. The Al/agarose@gold nanoparticle (AuNP) film/indium-tin-oxide (ITO)-structured memristive device exhibited reliable resistive switching characteristics with excellent retention with a large Ron/Roff ratio of 104. Also, analog conductance changes in our device were achieved with power consumption at the pJ level. This notable behavior could be maintained under mechanical deformations from a flat to a 4-mm bent state. In the recognition simulation based on the device's performance, an 91% accuracy and clear digit classification were achieved.
Collapse
Affiliation(s)
- Youngjin Kim
- Research Institute of Industrial Science, Hanyang University, Seoul, 04763, Republic of Korea
| | - Jun Seop An
- Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea
| | - Donghee Lee
- Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea
| | - Seong Yeon Ryu
- Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea
| | - Yoon-Chul Hwang
- Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea
| | - Dae Hun Kim
- Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea
| | - Tae Whan Kim
- Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea.
| |
Collapse
|
7
|
Xie L, Zhang Z, Wu Q, Gao Z, Mi G, Wang R, Sun HB, Zhao Y, Du Y. Intelligent wearable devices based on nanomaterials and nanostructures for healthcare. NANOSCALE 2023; 15:405-433. [PMID: 36519286 DOI: 10.1039/d2nr04551f] [Citation(s) in RCA: 12] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Emerging classes of flexible electronic sensors as alternatives to conventional rigid sensors offer a powerful set of capabilities for detecting and quantifying physiological and physical signals from human skin in personal healthcare. Unfortunately, the practical applications and commercialization of flexible sensors are generally limited by certain unsatisfactory aspects of their performance, such as biocompatibility, low sensing range, power supply, or single sensory function. This review intends to provide up-to-date literature on wearable devices for smart healthcare. A systematic review is provided, from sensors based on nanomaterials and nanostructures, algorithms, to multifunctional integrated devices with stretchability, self-powered performance, and biocompatibility. Typical electromechanical sensors are investigated with a specific focus on the strategies for constructing high-performance sensors based on nanomaterials and nanostructures. Then, the review emphasizes the importance of tailoring the fabrication techniques in order to improve stretchability, biocompatibility, and self-powered performance. The construction of wearable devices with high integration, high performance, and multi-functionalization for multiparameter healthcare is discussed in depth. Integrating wearable devices with appropriate machine learning algorithms is summarized. After interpretation of the algorithms, intelligent predictions are produced to give instructions or predictions for smart implementations. It is desired that this review will offer guidance for future excellence in flexible wearable sensing technologies and provide insight into commercial wearable sensors.
Collapse
Affiliation(s)
- Liping Xie
- College of Medicine and Biological Information Engineering, Northeastern University, Shenyang, 110169, China.
| | - Zelin Zhang
- College of Medicine and Biological Information Engineering, Northeastern University, Shenyang, 110169, China.
| | - Qiushuo Wu
- College of Medicine and Biological Information Engineering, Northeastern University, Shenyang, 110169, China.
| | - Zhuxuan Gao
- College of Medicine and Biological Information Engineering, Northeastern University, Shenyang, 110169, China.
| | - Gaotian Mi
- College of Medicine and Biological Information Engineering, Northeastern University, Shenyang, 110169, China.
| | - Renqiao Wang
- College of Medicine and Biological Information Engineering, Northeastern University, Shenyang, 110169, China.
| | - Hong-Bin Sun
- Department of Chemistry, Northeastern University, Shenyang, 110819, China
| | - Yue Zhao
- College of Medicine and Biological Information Engineering, Northeastern University, Shenyang, 110169, China.
| | - Yanan Du
- Department of Biomedical Engineering, School of Medicine, Tsinghua University, Beijing, 100084, China
| |
Collapse
|
8
|
Yuan Y, Wang Y, Tang X, Zhang N, Zhang W. Enhanced Resistive Switching Performance through Air-Stable Cu 2AgSbI 6 Thin Films for Flexible and Multilevel Storage Application. ACS APPLIED MATERIALS & INTERFACES 2022; 14:53990-53998. [PMID: 36413801 DOI: 10.1021/acsami.2c15332] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Herein, the lead-free halide perovskite films with different Cu-to-Ag ratios (Cu3-xAgxSbI6, x = 0, 1, 2, or 3) have been prepared by a spin-coating method at low temperature. The enhanced resistive switching (RS) performance of more uniform SET/RESET voltages and the endurance up to at least 1600 cycles are found in the RS memory with a device structure of Ag/PMMA/Cu2AgSbI6/ITO. The device performance is not degraded under different bending angles and after 103 bending cycles, which is beneficial for flexible memory applications. The appropriately increased activation energy of the perovskites with the partial substitution of Ag atoms, which would lead to a more robust filament formed, is proposed to explain the enhanced RS mechanism. Importantly, the effective size and number of filaments measured by conductive AFM are introduced to confirm the multilevel storage effect of Cu2AgSbI6. The multilevel storage characteristics with four resistance levels are demonstrated by various compliance currents. Moreover, the Cu2AgSbI6 memory devices still exhibit enhanced RS properties and multilevel storage after 75 days of exposure to ambient conditions. Our study provides a strategy for improving the stability and high-density storage applications of halide perovskite RS memory devices.
Collapse
Affiliation(s)
- Yiming Yuan
- Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
| | - Yuchan Wang
- Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
| | - Xiaosheng Tang
- Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
| | - Nan Zhang
- Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
| | - Wenxia Zhang
- Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
| |
Collapse
|
9
|
Zhang K, Jiang W, Li X, Gao X. Highly stretchable and sensitive strain sensors based on modified PDMS and hybrid particles of AgNWs/graphene. NANOTECHNOLOGY 2022; 34:06LT01. [PMID: 36356306 DOI: 10.1088/1361-6528/aca1ca] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/12/2022] [Accepted: 11/09/2022] [Indexed: 06/16/2023]
Abstract
High-performance strain sensors have received extensive attention due to their wide range of applications in pulsebeat detection, speech recognition, motion detection, and blood pressure monitoring. However, it is difficult to simultaneously attain high sensitivity and excellent stretchability. In this work, a strain sensor based on modified polydimethylsiloxane (PDMS) and conductive hybrid particles of silver nanowires (AgNWs)/graphene was successfully fabricated. A facile solvothermal polymerization process was used to change the structure of cross-linking networks and to obtain the PDMS elastomer with excellent stretchability. The application of the modified PDMS endows the strain sensor with a large strain range (∼20%), which is 100% higher than that of the strain sensor with unmodified PDMS. The AgNWs/graphene hybrid particles were prepared by a simple coprecipitation, reduction, and drying method. AgNWs serve as bridges between graphene sheets, endowing the strain sensor with a large gauge factor (GF = 400). The stability of the strain sensor was also verified. Besides, the strain sensor was successfully used in fields such as finger bending and speech recognition. Considering its high sensitivity, excellent stretchability, and high working stability, the sensor has great potential in health monitoring and motion detection.
Collapse
Affiliation(s)
- Kaili Zhang
- Shanxi Bethune Hospital, Shanxi Academy of medical Sciences, Tongji Shanxi Hospital, Third Hospital of Shanxi Medical University, Taiyuan, 030032, People's Republic of China
- Tongji Hospital, Tongji Medical College, Huazhong University of Science and Technology, Wuhan, 430030, People's Republic of China
| | - Wenshuai Jiang
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Nankai University, Tianjin, 300071 People's Republic of China
| | - Xiaokuan Li
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Nankai University, Tianjin, 300071 People's Republic of China
| | - Xiaoguang Gao
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, Nankai University, Tianjin, 300071 People's Republic of China
| |
Collapse
|
10
|
Wang L, Zhang Y, Zhang P, Wen D. Physical Transient Photoresistive Variable Memory Based on Graphene Quantum Dots. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3976. [PMID: 36432261 PMCID: PMC9695640 DOI: 10.3390/nano12223976] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/18/2022] [Revised: 10/30/2022] [Accepted: 11/09/2022] [Indexed: 06/16/2023]
Abstract
Biomaterials have attracted attention as a major material for biodegradable and transient electronic devices. In this work, biocompatible gelatin-doped graphene quantum dot films are reported as active layer switching memories with good electrical properties and physical transient properties. Such nonvolatile memory devices have write-once-read-many electrical properties and a concentrated distribution of low-resistance and high-resistance states. It provides a solution for the current obstacle of resistive memory storage and computing integration. Based on the sensitivity of the device to ultraviolet light, the "OR gate" logic operation is completed. Furthermore, the active layer can be dissolved in deionized water within 15 min, and the gelatin substrate-based device can be destroyed immediately in water, indicating the potential biodegradation and physical transient properties of our fabricated device. Biocompatible memory devices are environmentally friendly, sustainable for safe storage, and low-cost, making them ideal for storage applications.
Collapse
Affiliation(s)
- Lu Wang
- Heilongjiang Provincial Key Laboratory of Micronano Sensitive Devices and Systems, School of Electronic Engineering, Heilongjiang University, Harbin 150080, China
| | | | | | | |
Collapse
|
11
|
Tanim MMH, Sueoka B, Xiao Z, Cheong KY, Zhao F. Study of carbon nanotube embedded honey as a resistive switching material. NANOTECHNOLOGY 2022; 33:495705. [PMID: 36063797 DOI: 10.1088/1361-6528/ac8f51] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/17/2022] [Accepted: 09/04/2022] [Indexed: 06/15/2023]
Abstract
In this paper, natural organic honey embedded with carbon nanotubes (CNTs) was studied as a resistive switching material for biodegradable nonvolatile memory in emerging neuromorphic systems. CNTs were dispersed in a honey-water solution with the concentration of 0.2 wt% CNT and 30 wt% honey. The final honey-CNT-water mixture was spin-coated and dried into a thin film sandwiched in between Cu bottom electrode and Al top electrode to form a honey-CNT based resistive switching memory (RSM). Surface morphology, electrical characteristics and current conduction mechanism were investigated. The results show that although CNTs formed agglomerations in the dried honey-CNT film, both switching speed and the stability in SET and RESET process of honey-CNT RSM were improved. The mechanism of current conduction in CNT is governed by Ohm's law in low-resistance state and the low-voltage range in high-resistance state, but transits to the space charge limited conduction at high voltages approaching the SET voltage.
Collapse
Affiliation(s)
- Md Mehedi Hasan Tanim
- Micro/Nanoelectronics and Energy Laboratory, School of Engineering and Computer Science, Washington State University, Vancouver, WA 98686, United States of America
| | - Brandon Sueoka
- Micro/Nanoelectronics and Energy Laboratory, School of Engineering and Computer Science, Washington State University, Vancouver, WA 98686, United States of America
| | - Zhigang Xiao
- Department of Electrical Engineering, Alabama A&M University, Normal, AL 35762, United States of America
| | - Kuan Yew Cheong
- School of Materials and Mineral Resources Engineering, Engineering Campus, Universiti Sains Malaysia, 14300 Nibong Tebal, Penang, Malaysia
| | - Feng Zhao
- Micro/Nanoelectronics and Energy Laboratory, School of Engineering and Computer Science, Washington State University, Vancouver, WA 98686, United States of America
| |
Collapse
|
12
|
Zhang K, Xue Q, Zhou C, Mo W, Chen CC, Li M, Hang T. Biopolymer based artificial synapses enable linear conductance tuning and low-power for neuromorphic computing. NANOSCALE 2022; 14:12898-12908. [PMID: 36040454 DOI: 10.1039/d2nr01996e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Neuromorphic computing is considered a promising method for resolving the traditional von Neumann bottleneck. Natural biomaterial-based artificial synapses are popular units for constructing neuromorphic computing systems while suffering from poor linearity and limited conduction states. In this work, a AgNO3 doped iota-carrageenan (ι-car) based memristor is proposed to resolve the non-linear limitation. The memristor presents linear conductance tuning with a higher endurance (∼104), more enriched conduction states (>2000), and much lower power consumption (∼3.6 μW) than previously reported biomaterial-based analog memristors. AgNO3 is doped to ι-car to suppress the formation of Ag filaments, thereby eliminating uneven Joule heating. Using deep learning of hand-written digits as an application, a doping-enhanced recognition accuracy (93.8%) is achieved, close to that of an ideal synaptic device (95.7%). This work verifies the feasibility of using biopolymers for future high-performance computational and wearable/implantable electronic applications.
Collapse
Affiliation(s)
- Ke Zhang
- State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering Shanghai Jiao Tong University, Shanghai, 200240, China.
| | - Qi Xue
- State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering Shanghai Jiao Tong University, Shanghai, 200240, China.
| | - Chao Zhou
- Key Laboratory of Thin Film and Microfabrication Technology (Ministry of Education), School of Electronics, Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Wanneng Mo
- School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Chun-Chao Chen
- State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering Shanghai Jiao Tong University, Shanghai, 200240, China.
| | - Ming Li
- State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering Shanghai Jiao Tong University, Shanghai, 200240, China.
| | - Tao Hang
- State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering Shanghai Jiao Tong University, Shanghai, 200240, China.
| |
Collapse
|
13
|
Zhang X, Wu C, Lv Y, Zhang Y, Liu W. High-Performance Flexible Polymer Memristor Based on Stable Filamentary Switching. NANO LETTERS 2022; 22:7246-7253. [PMID: 35984717 DOI: 10.1021/acs.nanolett.2c02765] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Polymer-based atomic switch memristors via the formation/dissolution of atomic-scale conductive filaments are considered as the leading candidate for next-generation nonvolatile memory. However, the instability of conductive filaments of incomplete bridge makes their switching performances unsatisfied. In this work, we report a flexible polymeric memristor using polyethylenimine incorporated with silver salt. The memristor device exhibited superior performances at room temperature with a favorable endurance, high ON/OFF ratio, good retention, and low operating voltage. These satisfactory performances are attributed to the pre-existing Ag ions in the polymer, guiding the formation of a robust Ag filament. In addition, the device shows stable bipolar switching behavior in bending conditions or after hundreds of bending cycles. In our work, we provide a simple and efficient method to construct robust filament-based memristors for flexible electronics.
Collapse
Affiliation(s)
- Xinshui Zhang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Cong Wu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Yinjie Lv
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Yue Zhang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Wei Liu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| |
Collapse
|
14
|
Xu J, Zhao X, Zhao X, Wang Z, Tang Q, Xu H, Liu Y. Memristors with Biomaterials for Biorealistic Neuromorphic Applications. SMALL SCIENCE 2022. [DOI: 10.1002/smsc.202200028] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022] Open
Affiliation(s)
- Jiaqi Xu
- Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Education Northeast Normal University Changchun 130024 China
| | - Xiaoning Zhao
- Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Education Northeast Normal University Changchun 130024 China
| | - Xiaoli Zhao
- Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Education Northeast Normal University Changchun 130024 China
| | - Zhongqiang Wang
- Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Education Northeast Normal University Changchun 130024 China
| | - Qingxin Tang
- Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Education Northeast Normal University Changchun 130024 China
| | - Haiyang Xu
- Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Education Northeast Normal University Changchun 130024 China
| | - Yichun Liu
- Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Education Northeast Normal University Changchun 130024 China
| |
Collapse
|
15
|
Gao D, Lv J, Lee PS. Natural Polymer in Soft Electronics: Opportunities, Challenges, and Future Prospects. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2105020. [PMID: 34757632 DOI: 10.1002/adma.202105020] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2021] [Revised: 08/20/2021] [Indexed: 05/21/2023]
Abstract
Pollution caused by nondegradable plastics has been a serious threat to environmental sustainability. Natural polymers, which can degrade in nature, provide opportunities to replace petroleum-based polymers, meanwhile driving technological advances and sustainable practices. In the research field of soft electronics, regenerated natural polymers are promising building blocks for passive dielectric substrates, active dielectric layers, and matrices in soft conductors. Here, the natural-polymer polymorphs and their compatibilization with a variety of inorganic/organic conductors through interfacial bonding/intermixing and surface functionalization for applications in various device modalities are delineated. Challenges that impede the broad utilization of natural polymers in soft electronics, including limited durability, compromises between conductivity and deformability, and limited exploration in controllable degradation, etc. are explicitly inspected, while the potential solutions along with future prospects are also proposed. Finally, integrative considerations on material properties, device functionalities, and environmental impact are addressed to warrant natural polymers as credible alternatives to synthetic ones, and provide viable options for sustainable soft electronics.
Collapse
Affiliation(s)
- Dace Gao
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Jian Lv
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Pooi See Lee
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| |
Collapse
|
16
|
Dlamini ZW, Vallabhapurapu S, Daramola OA, Tseki PF, Krause RWM, Siwe-Noundou X, Mahule TS, Vallabhapurapu SV. Conduction and Resistive Switching in Dropcast CdTe/CdSe Core-Shell Quantum Dots Embedded Chitosan Composite. IRANIAN JOURNAL OF SCIENCE AND TECHNOLOGY, TRANSACTIONS A: SCIENCE 2022; 46:709-716. [DOI: 10.1007/s40995-022-01272-y] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/09/2021] [Accepted: 02/02/2022] [Indexed: 09/05/2024]
|
17
|
Liu X, Cao J, Qiu J, Zhang X, Wang M, Liu Q. Flexible and Stretchable Memristive Arrays for in-Memory Computing. FRONTIERS IN NANOTECHNOLOGY 2022. [DOI: 10.3389/fnano.2021.821687] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022] Open
Abstract
With the tremendous progress of Internet of Things (IoT) and artificial intelligence (AI) technologies, the demand for flexible and stretchable electronic systems is rapidly increasing. As the vital component of a system, existing computing units are usually rigid and brittle, which are incompatible with flexible and stretchable electronics. Emerging memristive devices with flexibility and stretchability as well as direct processing-in-memory ability are promising candidates to perform data computing in flexible and stretchable electronics. To execute the in-memory computing paradigm including digital and analogue computing, the array configuration of memristive devices is usually required. Herein, the recent progress on flexible and stretchable memristive arrays for in-memory computing is reviewed. The common materials used for flexible memristive arrays, including inorganic, organic and two-dimensional (2D) materials, will be highlighted, and effective strategies used for stretchable memristive arrays, including material innovation and structural design, will be discussed in detail. The current challenges and future perspectives of the in-memory computing utilizing flexible and stretchable memristive arrays are presented. These efforts aim to accelerate the development of flexible and stretchable memristive arrays for data computing in advanced intelligent systems, such as electronic skin, soft robotics, and wearable devices.
Collapse
|
18
|
Zhao X, Xu J, Xie D, Wang Z, Xu H, Lin Y, Hu J, Liu Y. Natural Acidic Polysaccharide-Based Memristors for Transient Electronics: Highly Controllable Quantized Conductance for Integrated Memory and Nonvolatile Logic Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2104023. [PMID: 34958496 DOI: 10.1002/adma.202104023] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/26/2021] [Revised: 09/02/2021] [Indexed: 06/14/2023]
Abstract
As a leading candidate for further memory and computing applications, memristors are being developed in an important direction of transient electronics. Herein, wafer-scale acidic polysaccharide thin films are reported as promising materials for memristors with remarkable transient characteristics. The memristor shows freestanding and lightweight features, and can be fully dissolved in deionized water within 3.5 s. More importantly, the ion-confinement capability of acidic polysaccharides where the cations can interact with the ionizable acid groups enables atomic manipulation of conductive filament. As a result, (i) a single device can produce 16 highly controllable and independent quantized conductance (QC) states with quasi-nonvolatile and nonvolatile characteristics and (ii) QC switching can be performed with ultrafast speed (2-5 ns) and low energy consumption (0.6-16 pJ). These remarkable features make the memristor promising for fast, low-power, and high-density memory and computing applications. Based on QC switching, the encoding/decoding and nonvolatile basic Boolean logic are designed and implemented. More importantly, "stateful" material implication logic which is promising for future in-memory computing is demonstrated with QC switching. These results significantly advance acidic polysaccharides to develop nanodevices with quantum effects.
Collapse
Affiliation(s)
- Xiaoning Zhao
- Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education Northeast Normal University, Changchun, 130024, China
| | - Jiaqi Xu
- Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education Northeast Normal University, Changchun, 130024, China
| | - Dan Xie
- Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education Northeast Normal University, Changchun, 130024, China
| | - Zhongqiang Wang
- Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education Northeast Normal University, Changchun, 130024, China
| | - Haiyang Xu
- Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education Northeast Normal University, Changchun, 130024, China
| | - Ya Lin
- Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education Northeast Normal University, Changchun, 130024, China
| | - Junli Hu
- Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education Northeast Normal University, Changchun, 130024, China
| | - Yichun Liu
- Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education Northeast Normal University, Changchun, 130024, China
| |
Collapse
|
19
|
Abstract
Bio-memristors constitute candidates for the next generation of non-volatile storage and bionic synapses due to their biocompatibility, environmental benignity, sustainability, flexibility, degradability, and impressive memristive performance. Silk fibroin (SF), a natural and abundant biomaterial with excellent mechanical, optical, electrical, and structure-adjustable properties as well as being easy to process, has been utilized and shown to have potential in the construction of bio-memristors. Here, we first summarize the fundamental mechanisms of bio-memristors based on SF. Then, the latest achievements and developments of pristine and composited SF-based memristors are highlighted, followed by the integration of memristive devices. Finally, the challenges and insights associated with SF-based bio-memristors are presented. Advances in SF-based bio-memristors will open new avenues in the design and integration of high-performance bio-integrated systems and facilitate their application in logic operations, complex circuits, and neural networks.
Collapse
Affiliation(s)
- Yi Zhang
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, P. R. China.
| | - Suna Fan
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, P. R. China.
| | - Yaopeng Zhang
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, P. R. China.
| |
Collapse
|
20
|
Taguchi K, Uemura T, Namba N, Petritz A, Araki T, Sugiyama M, Stadlober B, Sekitani T. Heterogeneous Functional Dielectric Patterns for Charge-Carrier Modulation in Ultraflexible Organic Integrated Circuits. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2104446. [PMID: 34545628 DOI: 10.1002/adma.202104446] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/10/2021] [Revised: 08/11/2021] [Indexed: 06/13/2023]
Abstract
Flexible electronics have gained considerable attention for application in wearable devices. Organic transistors are potential candidates to develop flexible integrated circuits (ICs). A primary technique for maximizing their reliability, gain, and operation speed is the modulation of charge-carrier behavior in the respective transistors fabricated on the same substrate. In this work, heterogeneous functional dielectric patterns (HFDP) of ultrathin polymer gate dielectrics of poly((±)endo,exo-bicyclo[2.2.1]hept-ene-2,3-dicarboxylic acid, diphenylester) (PNDPE) are introduced. The HFDP that are obtained via the photo-Fries rearrangement by ultraviolet radiation in the homogeneous PNDPE provide a functional area for charge-carrier modulation. This leads to programmable threshold voltage control over a wide range (-1.5 to +0.2 V) in the transistors with a high patterning resolution, at 2 V operational voltage. The transistors also exhibit high operational stability over 140 days and under the bias-stress duration of 1800 s. With the HFDP, the performance metrics of ICs, for example, the noise margin and gain of the zero-VGS load inverters and the oscillation frequency of ring oscillators are improved to 80%, 1200, and 2.5 kHz, respectively, which are the highest among the previously reported zero-VGS -based organic circuits. The HFDP can be applied to much complex and ultraflexible ICs.
Collapse
Affiliation(s)
- Koki Taguchi
- SANKEN (The Institute of Scientific and Industrial Research), Osaka University, 8-1, Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
- Advanced Photonics and Biosensing Open Innovation Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), 2-1 Yamadaoka, Suita, Osaka, 565-0871, Japan
- Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka, 565-0871, Japan
| | - Takafumi Uemura
- SANKEN (The Institute of Scientific and Industrial Research), Osaka University, 8-1, Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
- Advanced Photonics and Biosensing Open Innovation Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), 2-1 Yamadaoka, Suita, Osaka, 565-0871, Japan
| | - Naoko Namba
- SANKEN (The Institute of Scientific and Industrial Research), Osaka University, 8-1, Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
- Advanced Photonics and Biosensing Open Innovation Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), 2-1 Yamadaoka, Suita, Osaka, 565-0871, Japan
| | - Andreas Petritz
- JOANNEUM RESEARCH Forschungsgesellschaft mbH, MATERIALS-Institute for Surface Technologies and Photonics, Franz-Pichler-Straße 30, Weiz, 8160, Austria
| | - Teppei Araki
- SANKEN (The Institute of Scientific and Industrial Research), Osaka University, 8-1, Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
- Advanced Photonics and Biosensing Open Innovation Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), 2-1 Yamadaoka, Suita, Osaka, 565-0871, Japan
- Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka, 565-0871, Japan
| | - Masahiro Sugiyama
- SANKEN (The Institute of Scientific and Industrial Research), Osaka University, 8-1, Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
- Advanced Photonics and Biosensing Open Innovation Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), 2-1 Yamadaoka, Suita, Osaka, 565-0871, Japan
- Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka, 565-0871, Japan
| | - Barbara Stadlober
- JOANNEUM RESEARCH Forschungsgesellschaft mbH, MATERIALS-Institute for Surface Technologies and Photonics, Franz-Pichler-Straße 30, Weiz, 8160, Austria
| | - Tsuyoshi Sekitani
- SANKEN (The Institute of Scientific and Industrial Research), Osaka University, 8-1, Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
- Advanced Photonics and Biosensing Open Innovation Laboratory, National Institute of Advanced Industrial Science and Technology (AIST), 2-1 Yamadaoka, Suita, Osaka, 565-0871, Japan
- Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka, 565-0871, Japan
| |
Collapse
|
21
|
Xiong H, Ling S, Li Y, Duan F, Zhu H, Lu S, Du M. Flexible and recyclable bio-based transient resistive memory enabled by self-healing polyimine membrane. J Colloid Interface Sci 2021; 608:1126-1134. [PMID: 34735849 DOI: 10.1016/j.jcis.2021.10.126] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/19/2021] [Revised: 10/12/2021] [Accepted: 10/21/2021] [Indexed: 01/12/2023]
Abstract
The recyclable, self-healing and easily-degradable transient electronic technology has aroused tremendous attention in flexible electronic products. However, integrating the above advantages into one single flexible electronic device is still a huge challenge. Herein, we demonstrate a flexible and recyclable bio-based memory device using fish colloid as the resistive switching layer on a polyimine substrate, which affords reliable mechanical and electrical properties under repetitive conformal deformation operation. This flexible bio-based memory device presents potential analog behaviors including memory characteristics and excitatory current response, which undergoes incremental potentiation in conductance under successive electrical pulses. Moreover, this device is expected to greatly alleviate the environmental problems caused by electronic waste. It can be decomposed rapidly in water and well recycled, which is a promising candidate for transient memories and information security. We believe that this study can provide new possibilities to the field of high-performance transient electronics and flexible resistive memory devices.
Collapse
Affiliation(s)
- Hanli Xiong
- Key Laboratory of Synthetic and Biological Colloids, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, Wuxi, Jiangsu 214122, China
| | - Songtao Ling
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, China
| | - Yang Li
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, China.
| | - Fang Duan
- Key Laboratory of Synthetic and Biological Colloids, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, Wuxi, Jiangsu 214122, China
| | - Han Zhu
- Key Laboratory of Synthetic and Biological Colloids, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, Wuxi, Jiangsu 214122, China
| | - Shuanglong Lu
- Key Laboratory of Synthetic and Biological Colloids, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, Wuxi, Jiangsu 214122, China.
| | - Mingliang Du
- Key Laboratory of Synthetic and Biological Colloids, Ministry of Education, School of Chemical and Material Engineering, Jiangnan University, Wuxi, Jiangsu 214122, China.
| |
Collapse
|
22
|
Otoni CG, Azeredo HMC, Mattos BD, Beaumont M, Correa DS, Rojas OJ. The Food-Materials Nexus: Next Generation Bioplastics and Advanced Materials from Agri-Food Residues. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2102520. [PMID: 34510571 DOI: 10.1002/adma.202102520] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/01/2021] [Revised: 06/14/2021] [Indexed: 06/13/2023]
Abstract
The most recent strategies available for upcycling agri-food losses and waste (FLW) into functional bioplastics and advanced materials are reviewed and the valorization of food residuals are put in perspective, adding to the water-food-energy nexus. Low value or underutilized biomass, biocolloids, water-soluble biopolymers, polymerizable monomers, and nutrients are introduced as feasible building blocks for biotechnological conversion into bioplastics. The latter are demonstrated for their incorporation in multifunctional packaging, biomedical devices, sensors, actuators, and energy conversion and storage devices, contributing to the valorization efforts within the future circular bioeconomy. Strategies are introduced to effectively synthesize, deconstruct and reassemble or engineer FLW-derived monomeric, polymeric, and colloidal building blocks. Multifunctional bioplastics are introduced considering the structural, chemical, physical as well as the accessibility of FLW precursors. Processing techniques are analyzed within the fields of polymer chemistry and physics. The prospects of FLW streams and biomass surplus, considering their availability, interactions with water and thermal stability, are critically discussed in a near-future scenario that is expected to lead to next-generation bioplastics and advanced materials.
Collapse
Affiliation(s)
- Caio G Otoni
- Department of Materials Engineering (DEMa), Federal University of São Carlos (UFSCar), Rod. Washington Luiz, km 235, São Carlos, SP, 13565-905, Brazil
| | - Henriette M C Azeredo
- Embrapa Agroindústria Tropical, Rua Dra. Sara Mesquita 2270, Fortaleza, CE, 60511-110, Brazil
- Nanotechnology National Laboratory for Agriculture (LNNA), Embrapa Instrumentação, Rua XV de Novembro 1452, São Carlos, SP, 13560-970, Brazil
| | - Bruno D Mattos
- Department of Bioproducts and Biosystems, School of Chemical Engineering, Aalto University, P.O. Box 16300, Aalto, Espoo, FIN-00076, Finland
| | - Marco Beaumont
- Department of Chemistry, University of Natural Resources and Life Sciences, Vienna (BOKU), Konrad-Lorenz-Str. 24, Tulln, A-3430, Austria
| | - Daniel S Correa
- Nanotechnology National Laboratory for Agriculture (LNNA), Embrapa Instrumentação, Rua XV de Novembro 1452, São Carlos, SP, 13560-970, Brazil
| | - Orlando J Rojas
- Department of Bioproducts and Biosystems, School of Chemical Engineering, Aalto University, P.O. Box 16300, Aalto, Espoo, FIN-00076, Finland
- Bioproducts Institute, Departments of Chemical & Biological Engineering, Chemistry and Wood Science, The University of British Columbia, 2360 East Mall, Vancouver, BC, V6T 1Z3, Canada
| |
Collapse
|
23
|
Wang L, Zhu H, Wen D. Bioresistive Random-Access Memory with Gold Nanoparticles that Generate the Coulomb Blocking Effect Can Realize Multilevel Data Storage and Synapse Simulation. J Phys Chem Lett 2021; 12:8956-8962. [PMID: 34505773 DOI: 10.1021/acs.jpclett.1c02815] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Gold nanoparticles (Au NPs) have good biocompatibility and special quantum effects. In this Letter, we embedded Au NPs into silkworm hemolymph (SH) to improve the performance of the device and fabricated Al/SH:Au NPs/indium tin oxide (ITO)/glass resistive random access memory. The device exhibits a bipolar switching behavior with a retention time of 104 s. Compared with the Al/SH/ITO device without Au NPs, the device has a higher ON/OFF current ratio (>105) and a smaller Vreset. The improvement in device performance is attributed to the fact that Au NPs act as the electron-trapping center in the device; a Coulomb blockade occurs after electrons are trapped, thereby increasing the resistance of the device in the high-resistance state. Using optimized devices can realize multilevel data storage and can also simulate synaptic characteristics such as potentiation and depression. The device is expected to be applied to high-density, low-cost, degradable, and biocompatible storage devices and neuromorphic computing in the future.
Collapse
Affiliation(s)
- Lu Wang
- School of Electronic Engineering, HLJ Province Key Laboratory of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin 150080, China
| | - Hongyu Zhu
- School of Electronic Engineering, HLJ Province Key Laboratory of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin 150080, China
| | - Dianzhong Wen
- School of Electronic Engineering, HLJ Province Key Laboratory of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin 150080, China
| |
Collapse
|
24
|
Wang L, Zhang Y, Wen D. Flexible Nonvolatile Bioresistive Random Access Memory with an Adjustable Memory Mode Capable of Realizing Logic Functions. NANOMATERIALS 2021; 11:nano11081973. [PMID: 34443804 PMCID: PMC8401196 DOI: 10.3390/nano11081973] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/25/2021] [Revised: 07/27/2021] [Accepted: 07/28/2021] [Indexed: 01/24/2023]
Abstract
In this study, a flexible bioresistive memory with an aluminum/tussah hemolymph/indium tin oxide/polyethylene terephthalate structure is fabricated by using a natural biological material, tussah hemolymph (TH), as the active layer. When different compliance currents (Icc) are applied to the device, it exhibits different resistance characteristics. When 1 mA is applied in the positive voltage range and 100 mA is applied in the negative voltage range, the device exhibits bipolar resistive switching behavior. Additionally, when 1 mA is applied in both the positive- and negative-voltage ranges, the device exhibits write-once-read-many-times (WORM) characteristics. The device has good endurance, with a retention time exceeding 104 s. After 104 bending cycles, the electrical characteristics remain constant. This memory device can be applied for “AND” and “OR” logic operations in programmable logic circuits. The prepared flexible and transparent biomemristor made of pure natural TH provides a promising new approach for realizing environmentally friendly and biocompatible flexible memory, nerve synapses, and wearable electronic devices.
Collapse
Affiliation(s)
- Lu Wang
- Correspondence: ; Tel.: +86-188-4502-5666
| | | | | |
Collapse
|
25
|
Zhang X, Zhao X, Shan X, Tian Q, Wang Z, Lin Y, Xu H, Liu Y. Humidity Effect on Resistive Switching Characteristics of the CH 3NH 3PbI 3 Memristor. ACS APPLIED MATERIALS & INTERFACES 2021; 13:28555-28563. [PMID: 34101436 DOI: 10.1021/acsami.1c05590] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Organic-inorganic hybrid halide perovskites (OIHPs) with inherent mixed ionic-electronic conduction ability have been proposed as promising candidates for memristors with unique optoelectronic characteristics. Despite the great achievements toward understanding the working mechanism and exploring their functionality as water-sensitive materials, the humidity effect on the resistive switching (RS) characteristics still remains to be studied. This study investigates the humidity effect on the RS characteristics of Au/CH3NH3PbI3/FTO memristor. The memristor works well at moderate relative humidity (RH, <75%) and degrades rapidly at higher RH of 90%. An obvious decrease in low resistance states on increasing the RH level is observed, which could be attributed to water-induced reduction of the iodide migration barrier. Raman and X-ray diffraction analyses indicate that the migration barrier reduction possibly originated from the weakening of the Pb-I bond caused by the intercalation of water molecules into the crystal lattice. The humidity-sensitive RS characteristics of the memristor could extend the scope of OIHP application for sensing and security applications and also prompt researchers to pay attention to the humidity effect on memristor devices with OIHPs.
Collapse
Affiliation(s)
- Xiaohan Zhang
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, P.R. China
| | - Xiaoning Zhao
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, P.R. China
| | - Xuanyu Shan
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, P.R. China
| | - Qiaoling Tian
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, P.R. China
| | - Zhongqiang Wang
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, P.R. China
| | - Ya Lin
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, P.R. China
| | - Haiyang Xu
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, P.R. China
| | - Yichun Liu
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, P.R. China
| |
Collapse
|
26
|
Wen DL, Sun DH, Huang P, Huang W, Su M, Wang Y, Han MD, Kim B, Brugger J, Zhang HX, Zhang XS. Recent progress in silk fibroin-based flexible electronics. MICROSYSTEMS & NANOENGINEERING 2021; 7:35. [PMID: 34567749 PMCID: PMC8433308 DOI: 10.1038/s41378-021-00261-2] [Citation(s) in RCA: 50] [Impact Index Per Article: 16.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/25/2020] [Accepted: 02/16/2021] [Indexed: 05/04/2023]
Abstract
With the rapid development of the Internet of Things (IoT) and the emergence of 5G, traditional silicon-based electronics no longer fully meet market demands such as nonplanar application scenarios due to mechanical mismatch. This provides unprecedented opportunities for flexible electronics that bypass the physical rigidity through the introduction of flexible materials. In recent decades, biological materials with outstanding biocompatibility and biodegradability, which are considered some of the most promising candidates for next-generation flexible electronics, have received increasing attention, e.g., silk fibroin, cellulose, pectin, chitosan, and melanin. Among them, silk fibroin presents greater superiorities in biocompatibility and biodegradability, and moreover, it also possesses a variety of attractive properties, such as adjustable water solubility, remarkable optical transmittance, high mechanical robustness, light weight, and ease of processing, which are partially or even completely lacking in other biological materials. Therefore, silk fibroin has been widely used as fundamental components for the construction of biocompatible flexible electronics, particularly for wearable and implantable devices. Furthermore, in recent years, more attention has been paid to the investigation of the functional characteristics of silk fibroin, such as the dielectric properties, piezoelectric properties, strong ability to lose electrons, and sensitivity to environmental variables. Here, this paper not only reviews the preparation technologies for various forms of silk fibroin and the recent progress in the use of silk fibroin as a fundamental material but also focuses on the recent advanced works in which silk fibroin serves as functional components. Additionally, the challenges and future development of silk fibroin-based flexible electronics are summarized. (1) This review focuses on silk fibroin serving as active functional components to construct flexible electronics. (2) Recent representative reports on flexible electronic devices that applied silk fibroin as fundamental supporting components are summarized. (3) This review summarizes the current typical silk fibroin-based materials and the corresponding advanced preparation technologies. (4) The current challenges and future development of silk fibroin-based flexible electronic devices are analyzed.
Collapse
Affiliation(s)
- Dan-Liang Wen
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731 China
| | - De-Heng Sun
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731 China
| | - Peng Huang
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731 China
| | - Wen Huang
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731 China
| | - Meng Su
- CIRMM, Institute of Industrial Science, The University of Tokyo, Tokyo, 153-8505 Japan
| | - Ya Wang
- Microsystems Laboratory, École Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland
| | - Meng-Di Han
- Institute of Microelectronics, Peking University, 100087 Beijing, China
| | - Beomjoon Kim
- CIRMM, Institute of Industrial Science, The University of Tokyo, Tokyo, 153-8505 Japan
| | - Juergen Brugger
- Microsystems Laboratory, École Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland
| | - Hai-Xia Zhang
- Institute of Microelectronics, Peking University, 100087 Beijing, China
| | - Xiao-Sheng Zhang
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731 China
| |
Collapse
|
27
|
Li Y, Zhang C, Ling S, Ma C, Zhang J, Jiang Y, Zhao R, Li H, Lu J, Zhang Q. Toward Highly Robust Nonvolatile Multilevel Memory by Fine Tuning of the Nanostructural Crystalline Solid-State Order. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2100102. [PMID: 33788423 DOI: 10.1002/smll.202100102] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/07/2021] [Revised: 02/01/2021] [Indexed: 06/12/2023]
Abstract
Organic resistive memory (ORM) offers great promise for next-generation high-density multilevel-cell (MLC) data storage. However, the fine tuning of crystalline order among its active layer still remains challenging, which largely restricts ORM behavior. Here, an exceptional solid-state transition from disordered orientations to highly-uniform orientation within the ORM layer is facilely triggered via molecular strategic tailoring. Two diketopyrrolopyrrole-based small molecular analogues (NI1 TDPP and NI2 TDPP) are demonstrated to display different symmetry. The asymmetric NI1 TDPP shows an irregular solid-state texture, while the centro-symmetric NI2 TDPP conforms to an ordered out-of-plane single-crystalline pattern that aligns with the foremost charge transportation along the substrate normal, and exhibits excellent MLC memory characteristics. Moreover, this highly oriented pattern guarantees the large-area film uniformity, leading to the twofold increase in the yield of as-fabricated ORM devices. This study reveals that the solid-state crystalline nanostructural order of organic materials can be controlled by reasonable molecular design to actuate high-performance organic electronic circuits.
Collapse
Affiliation(s)
- Yang Li
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu, 215009, China
- College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, Jiangsu, 215123, China
| | - Cheng Zhang
- College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, Jiangsu, 215123, China
| | - Songtao Ling
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu, 215009, China
| | - Chunlan Ma
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu, 215009, China
| | - Jinlei Zhang
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu, 215009, China
| | - Yucheng Jiang
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu, 215009, China
| | - Run Zhao
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu, 215009, China
| | - Hua Li
- College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, Jiangsu, 215123, China
| | - Jianmei Lu
- College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, Jiangsu, 215123, China
| | - Qichun Zhang
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| |
Collapse
|
28
|
Sun F, Lu Q, Feng S, Zhang T. Flexible Artificial Sensory Systems Based on Neuromorphic Devices. ACS NANO 2021; 15:3875-3899. [PMID: 33507725 DOI: 10.1021/acsnano.0c10049] [Citation(s) in RCA: 51] [Impact Index Per Article: 17.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
Emerging flexible artificial sensory systems using neuromorphic electronics have been considered as a promising solution for processing massive data with low power consumption. The construction of artificial sensory systems with synaptic devices and sensing elements to mimic complicated sensing and processing in biological systems is a prerequisite for the realization. To realize high-efficiency neuromorphic sensory systems, the development of artificial flexible synapses with low power consumption and high-density integration is essential. Furthermore, the realization of efficient coupling between the sensing element and the synaptic device is crucial. This Review presents recent progress in the area of neuromorphic electronics for flexible artificial sensory systems. We focus on both the recent advances of artificial synapses, including device structures, mechanisms, and functions, and the design of intelligent, flexible perception systems based on synaptic devices. Additionally, key challenges and opportunities related to flexible artificial perception systems are examined, and potential solutions and suggestions are provided.
Collapse
Affiliation(s)
- Fuqin Sun
- i -Lab, Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), 398 Ruoshui Road, Suzhou 215123, P. R. China
- School of Nano Technology and Nano Bionics, University of Science and Technology of China, 96 Jinzhai Road, Hefei, Anhui 230026, P. R. China
| | - Qifeng Lu
- i -Lab, Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), 398 Ruoshui Road, Suzhou 215123, P. R. China
| | - Simin Feng
- i -Lab, Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), 398 Ruoshui Road, Suzhou 215123, P. R. China
| | - Ting Zhang
- i -Lab, Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), 398 Ruoshui Road, Suzhou 215123, P. R. China
- School of Nano Technology and Nano Bionics, University of Science and Technology of China, 96 Jinzhai Road, Hefei, Anhui 230026, P. R. China
- Center for Excellence in Brain Science and Intelligence Technology, Chinese Academy of Sciences, Shanghai 200031, China
| |
Collapse
|
29
|
Arshad N, Irshad MS, Abbasi MS, Ur Rehman S, Ahmed I, Javed MQ, Ahmad S, Sharaf M, Al Firdausi MD. Green thin film for stable electrical switching in a low-cost washable memory device: proof of concept. RSC Adv 2021; 11:4327-4338. [PMID: 35424390 PMCID: PMC8694386 DOI: 10.1039/d0ra08784j] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/15/2020] [Accepted: 12/26/2020] [Indexed: 11/21/2022] Open
Abstract
Low-cost and washable resistive switching (RS) memory devices with stable retention and low operational voltage are important for higher speed and denser non-volatile memories. In the case of green electronics, pectin has emerged as a suitable alternative to toxic metal oxides for resistive switching applications. Herein, a pectin-based thin film was fabricated on a fluorine-doped tin oxide glass substrate for RS mechanism. The presence of sp3-C groups with low binding energy corresponds to tunable charged defects and the oxygen vacancies confirmed by the O 1s spectra that plays a decisive role in the resistive switching mechanism, as revealed by X-ray photoemission spectroscopy (XPS). The surface morphology of the pectin film shows homogeneous growth and negligible surface roughness (38.98 ± 9.09). The pectin film can dissolve in DI water (10 minutes) owing to its ionization of carboxylic groups, that meet the trends of transient electronics. The developed Ag/pectin/FTO-based memory cell exhibits stable and reproducible bipolar resistive switching behavior along with an excellent ON/OFF ratio (104) and negligible electrical degradation was observed over 30 repeated cycles. Hence, it appears to be a valuable application for green electronics. Indeed, biocompatible storage devices derived from natural pectin are promising for high-density safe applications for information storage systems, flexible electronics, and green electronics.
Collapse
Affiliation(s)
- Naila Arshad
- Institute of Quantum Optics and Quantum Information, School of Science, Xi'an Jiaotong University (XJTU) 710049 P. R. China
| | - Muhammad Sultan Irshad
- Ministry-of-Education Key Laboratory for the Green Preparation and Application of Functional Materials, School of Materials Science and Engineering, Hubei University Wuhan 430062 P. R. China +86-156-23138982
| | - Misbah Sehar Abbasi
- School of Energy and Power Engineering, Xi'an Jiaotong University (XJTU) 710049 P. R. China
| | - Saif Ur Rehman
- Clean Energy Technology Research Lab (CERL, ), Department of Physics, COMSATS University Islamabad Lahore Campus 54000 Pakistan
| | - Iftikhar Ahmed
- Energy Research Centre, COMSATS University Islamabad Lahore Campus 54000 Lahore Pakistan +92-321-8856761
| | - M Qasim Javed
- Food and Biotechnology Research Center (FBRC), Pakistan Council of Scientific and Industrial Research Lahore 54000 Pakistan
| | - Shafiq Ahmad
- Department of Industrial Engineering, College of Engineering, King Saud University Riyadh Saudi Arabia
| | - Mohamed Sharaf
- Department of Industrial Engineering, College of Engineering, King Saud University Riyadh Saudi Arabia
| | | |
Collapse
|
30
|
Jiang T, Meng X, Zhou Z, Wu Y, Tian Z, Liu Z, Lu G, Eginlidil M, Yu HD, Liu J, Huang W. Highly flexible and degradable memory electronics comprised of all-biocompatible materials. NANOSCALE 2021; 13:724-729. [PMID: 33393574 DOI: 10.1039/d0nr05858k] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Biocompatible materials have received increasing attention as one of the most important building blocks for flexible and transient memories. Herein, a fully biocompatible resistive switching (RS) memory electronic composed of a carbon dot (CD)-polyvinyl pyrrolidone (PVP) nanocomposite and a silver nanowire (Ag NW) network buried in a flexible gelatin film is introduced with promising nonvolatile RS characteristics for flexible and transient memory applications. The fabricated device exhibited a rewritable flash-type memory behavior, such as low operation voltage (≈-1.12 V), high ON/OFF ratio (>102), long retention time (over 104 s), and small bending radius (15 mm). As a proof of degradability, this transient memory can dissolve completely within 90 s after being immersed into deionized water at 55 °C; it can decompose naturally in soil within 6 days. This fully biocompatible memory electronic paves a novel way for flexible and wearable green electronics.
Collapse
Affiliation(s)
- Tongfen Jiang
- Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China.
| | | | | | | | | | | | | | | | | | | | | |
Collapse
|
31
|
Guo T, Sun B, Ranjan S, Jiao Y, Wei L, Zhou YN, Wu YA. From Memristive Materials to Neural Networks. ACS APPLIED MATERIALS & INTERFACES 2020; 12:54243-54265. [PMID: 33232112 DOI: 10.1021/acsami.0c10796] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The information technologies have been increasing exponentially following Moore's law over the past decades. This has fundamentally changed the ways of work and life. However, further improving data process efficiency is facing great challenges because of physical and architectural limitations. More powerful computational methodologies are crucial to fulfill the technology gap in the post-Moore's law period. The memristor exhibits promising prospects in information storage, high-performance computing, and artificial intelligence. Since the memristor was theoretically predicted by L. O. Chua in 1971 and experimentally confirmed by HP Laboratories in 2008, it has attracted great attention from worldwide researchers. The intrinsic properties of memristors, such as simple structure, low power consumption, compatibility with the complementary metal oxide-semiconductor (CMOS) process, and dual functionalities of the data storage and computation, demonstrate great prospects in many applications. In this review, we cover the memristor-relevant computing technologies, from basic materials to in-memory computing and future prospects. First, the materials and mechanisms in the memristor are discussed. Then, we present the development of the memristor in the domains of the synapse simulating, in-memory logic computing, deep neural networks (DNNs) and spiking neural networks (SNNs). Finally, the existent technology challenges and outlook of the state-of-art applications are proposed.
Collapse
Affiliation(s)
- Tao Guo
- Department of Mechanical and Mechatronics Engineering, Waterloo Institute of Nanotechnology, Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - Bai Sun
- Department of Mechanical and Mechatronics Engineering, Waterloo Institute of Nanotechnology, Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials (Ministry of Education of China), Southwest Jiaotong University, Chengdu, Sichuan 610031, China
| | - Shubham Ranjan
- Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - Yixuan Jiao
- Department of Mechanical and Mechatronics Engineering, Waterloo Institute of Nanotechnology, Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
- Department of Chemical Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - Lan Wei
- Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - Y Norman Zhou
- Department of Mechanical and Mechatronics Engineering, Waterloo Institute of Nanotechnology, Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - Yimin A Wu
- Department of Mechanical and Mechatronics Engineering, Waterloo Institute of Nanotechnology, Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| |
Collapse
|
32
|
Zhou HL, Jiang YP, Tang XG, Liu QX, Li WH, Tang ZH. Excellent Bidirectional Adjustable Multistage Resistive Switching Memory in Bi 2FeCrO 6 Thin Film. ACS APPLIED MATERIALS & INTERFACES 2020; 12:54168-54173. [PMID: 33201657 DOI: 10.1021/acsami.0c16040] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
As an important method to further improve the storage density of resistive memory, multistage resistive switching devices have become an important research direction. However, no stable and controllable multistage resistive switching device has been prepared, and the working mechanism is still unclear. Here, a sandwich-structured device is simply prepared by spin coating, with the work layer is the Bi2FeCrO6 thin film. The device can realize bidirectional controllable multistage resistive switching behavior, the biggest on/off ratio is 104, and it can maintain stability without attenuation at 100 times slow loop and 104 times pulse cycle. The analyzes showed that the charged ions formed by defects in the device migrated under the action of an external electric field lead to the Schottky barrier height reversible changed. Which is the key to cause multistage resistive switching behavior. This work is the first report about the voltage control of bidirectional adjustable multistage resistive switching behavior in the Bi2FeCrO6 thin film. The principle of generation is analyzed, and important ideas and insights are provided for the preparation and treatment of related multistage resistive problems.
Collapse
Affiliation(s)
- Hang-Lv Zhou
- School of Physics & Optoelectric Engineering, Guangdong University of Technology, Guangzhou Higher Education Mega Center, Guangzhou 510006, P. R. China
| | - Yan-Ping Jiang
- School of Physics & Optoelectric Engineering, Guangdong University of Technology, Guangzhou Higher Education Mega Center, Guangzhou 510006, P. R. China
| | - Xin-Gui Tang
- School of Physics & Optoelectric Engineering, Guangdong University of Technology, Guangzhou Higher Education Mega Center, Guangzhou 510006, P. R. China
| | - Qiu-Xiang Liu
- School of Physics & Optoelectric Engineering, Guangdong University of Technology, Guangzhou Higher Education Mega Center, Guangzhou 510006, P. R. China
| | - Wen-Hua Li
- School of Physics & Optoelectric Engineering, Guangdong University of Technology, Guangzhou Higher Education Mega Center, Guangzhou 510006, P. R. China
| | - Zhen-Hua Tang
- School of Physics & Optoelectric Engineering, Guangdong University of Technology, Guangzhou Higher Education Mega Center, Guangzhou 510006, P. R. China
| |
Collapse
|
33
|
Guo J, Geng J, Tian G, Ji D, Qi S, Wu D. Zinc Ion Triggered Controllable Binary/Ternary Memory Conversion Behaviors in Polyimides Containing Pendant Porphyrin Group. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2005659. [PMID: 33201592 DOI: 10.1002/smll.202005659] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/11/2020] [Revised: 10/09/2020] [Indexed: 06/11/2023]
Abstract
Compared with typical binary polymeric memory materials, functional polymers with ternary memory performance possess significant potential to achieve ultra-high-density data storage. The reported ternary memory polymers are normally driven by dual-mechanism. However, the involved thermodynamically unstable mechanisms (field-induced conformation change or conductive filament formation/fracture) may result in the poor reliability of memory devices under high-temperature working atmosphere. Another strategy to realize ternary memory is introducing charge trapping/de-trapping mechanism by attaching charge trap atom/group at electron donor, which is proved not always effective. Moreover, the synergistic two mechanisms may have difficulty for clarifying the relationship between memory performance and chemical structures, which is the core issue of polymer memory materials. Besides, some multi-level memory materials need the cooperative participation of artificially setting compliance current, which is the extension of typical binary memory and may cause a more complicated technique and logic circuit. Herein, based on charge-transfer mechanism, a concise and effective strategy to realize ternary memory application is proposed. By inserting a Zn ion, the charge-transfer process occurring in electron donors can lead to the novel electrical tri-stability memory behaviors. This work can provide a novel idea for achieving reliable and intrinsic ternary high-density data storage applications.
Collapse
Affiliation(s)
- Jiacong Guo
- State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing, 100029, China
| | - Jianzhao Geng
- State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing, 100029, China
| | - Guofeng Tian
- State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing, 100029, China
| | - Deyang Ji
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, Institute of Molecular Aggregation Science, Tianjin University, Tianjin, 300072, China
- Beijing National Laboratory for Molecular Sciences, Beijing, 100190, China
| | - Shengli Qi
- State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing, 100029, China
- Changzhou Institute of Advanced Materials, Beijing University of Chemical Technology, Beijing, 213164, China
| | - Dezhen Wu
- State Key Laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing, 100029, China
- Changzhou Institute of Advanced Materials, Beijing University of Chemical Technology, Beijing, 213164, China
| |
Collapse
|
34
|
Islam MR, Mollik SI. Enhanced electrochemical performance of flexible and eco-friendly starch/graphene oxide nanocomposite. Heliyon 2020; 6:e05292. [PMID: 33102876 PMCID: PMC7575802 DOI: 10.1016/j.heliyon.2020.e05292] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/16/2020] [Revised: 08/14/2020] [Accepted: 10/14/2020] [Indexed: 02/07/2023] Open
Abstract
In this work, flexible plasticized starch/graphene oxide (PS/GO) nanocomposites are synthesized by a simple and economic solution cast technique. The structural and surface morphological study of the nanocomposite demonstrates an increased degree of interaction between PS and GO which in turn improves the mechanical strength and thermal stability of the nanocomposite. The influence of GO loading on the capacitive performance of the nanocomposite was evaluated by studying the electrochemical properties. The PS/GO nanocomposite showed an improved capacitive behavior with a specific capacitance of 115 F/g compared to that of pure starch (2.20 F/g) and GO (10.42 F/g) at a current density 0.1 mA/cm2. The electrochemical impedance analysis indicates that the incorporation of GO enhances the conductivity of the nanocomposite in the charge transfer resistance at the electrode/electrolyte interface due to the incorporation of GO. The large surface areas provided by the GO sheets allow faster transport of charge carriers into the electrode and improve the electrochemical properties of the PS/GO nanocomposite. Considering the simplicity and effectiveness of the synthesis proses, the result indicates that the PS/GO nanocomposite could be a potential alternative for bio-friendly, flexible energy-storage applications.
Collapse
Affiliation(s)
- Muhammad Rakibul Islam
- Department of Physics, Bangladesh University of Engineering and Technology (BUET), Dhaka, Bangladesh
| | - Shafiqul I. Mollik
- Department of Physics, Bangladesh University of Engineering and Technology (BUET), Dhaka, Bangladesh
| |
Collapse
|
35
|
Multi-Bit Biomemory Based on Chitosan: Graphene Oxide Nanocomposite with Wrinkled Surface. MICROMACHINES 2020; 11:mi11060580. [PMID: 32531883 PMCID: PMC7344448 DOI: 10.3390/mi11060580] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/08/2020] [Revised: 06/04/2020] [Accepted: 06/05/2020] [Indexed: 01/17/2023]
Abstract
Chitosan (CS) is one of the commonly affluent polysaccharides that are attractive biomaterials as they are easily found in different organisms and are biocompatible. An environment-friendly multi-bit biomemory was successfully achieved on the basis of CS as a favorable candidate for resistive-switching memory applications. By incorporating graphene oxide (GO) into CS, the multi-bit biomemory device (indium tin oxide (ITO)/CS:GO/Ni) was obtained through the solution-processable method, which had a high current ratio among a high, intermediate, and low resistance state as well as a low SET/RESET voltage. GO acting as trapping sites in the active layer might be responsible for the biomemory mechanism. This research opens up a new avenue towards renewable and environmentally benign CS-based materials for biodegradable electronic devices.
Collapse
|
36
|
Lv Z, Wang Y, Chen J, Wang J, Zhou Y, Han ST. Semiconductor Quantum Dots for Memories and Neuromorphic Computing Systems. Chem Rev 2020; 120:3941-4006. [DOI: 10.1021/acs.chemrev.9b00730] [Citation(s) in RCA: 114] [Impact Index Per Article: 28.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Affiliation(s)
- Ziyu Lv
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Yan Wang
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Jingrui Chen
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Junjie Wang
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Su-Ting Han
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| |
Collapse
|
37
|
Li L. Biomemristic Behavior for Water-Soluble Chitosan Blended with Graphene Quantum Dot Nanocomposite. NANOMATERIALS (BASEL, SWITZERLAND) 2020; 10:E559. [PMID: 32244863 PMCID: PMC7153374 DOI: 10.3390/nano10030559] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/26/2020] [Revised: 03/14/2020] [Accepted: 03/15/2020] [Indexed: 11/16/2022]
Abstract
Bionanocomposite has promising biomemristic behaviors for data storage inspired by a natural biomaterial matrix. Carboxylated chitosan (CCS), a water-soluble derivative of chitosan avoiding the acidic salt removal, has better biodegradability and bioactivity, and is able to absorb graphene quantum dots (GQDs) employed as charge-trapping centers. In this investigation, biomemristic devices based on water-soluble CCS:GQDs nanocomposites were successfully achieved with the aid of the spin-casting method. The promotion of binary biomemristic behaviors for Ni/CCS:GQDs/indium-tin-oxide (ITO) was evaluated for distinct weight ratios of the chemical components. Fourier transform infrared spectroscopy, Raman spectroscopy (temperature dependence), thermogravimetric analyses and scanning electron microscopy were performed to assess the nature of the CCS:GQDs nanocomposites. The fitting curves on the experimental data further confirmed that the conduction mechanism might be attributed to charge trapping-detrapping in the CCS:GQDs nanocomposite film. Advances in water-soluble CCS-based electronic devices would open new avenues in the biocompatibility and integration of high-performance biointegrated electronics.
Collapse
Affiliation(s)
- Lei Li
- HLJ Province Key Laboratories of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin 150080, China; ; Tel.: +86-136-7462-1831
- Research Center for Fiber Optic Sensing Technology National Local Joint Engineering, Heilongjiang University, Harbin 150080, China
| |
Collapse
|
38
|
Ge J, Li D, Huang C, Zhao X, Qin J, Liu H, Ye W, Xu W, Liu Z, Pan S. Memristive synapses with high reproducibility for flexible neuromorphic networks based on biological nanocomposites. NANOSCALE 2020; 12:720-730. [PMID: 31829372 DOI: 10.1039/c9nr08001e] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Memristive synapses from biomaterials are promising for building flexible and implantable artificial neuromorphic systems due to their remarkable mechanical and biological properties. However, these biological devices have relatively poor memristive switching characteristics, and thus fail to meet the requirement of neuromorphic networks for high learning accuracy. Here, memristive synapses based on carrageenan nanocomposites that possess desirable characteristics are demonstrated. These devices show highly reproducible analog resistive switching behaviors with 250 conductance states, low write noise, good write linearity, high retention of more than 104 s and endurance for at least 106 pulses. The enhanced switching properties are attributed to controllable and confined conductive filament growth, owing to the synergistic effect of self-assembled silver nanocluster doping and nanocone-shaped electrode contact. Moreover, the devices exhibit excellent reliability after 1000 bending cycles. Simulations including the non-ideal factors prove that the synaptic device array can operate with an online learning accuracy of 94.3%. These findings enable broader applications of biomaterials in flexible memristive devices and neuromorphic systems.
Collapse
Affiliation(s)
- Jun Ge
- Solid State Physics & Material Research Laboratory, School of Physics and Electronic Engineering, Guangzhou University, Guangzhou, 510006, China.
| | | | | | | | | | | | | | | | | | | |
Collapse
|
39
|
Tu T, Liang B, Cao Q, Fang L, Zhu Q, Cai Y, Ye X. Fully transient electrochemical testing strips for eco-friendly point of care testing. RSC Adv 2020; 10:7241-7250. [PMID: 35493906 PMCID: PMC9049791 DOI: 10.1039/c9ra09847j] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/25/2019] [Accepted: 02/08/2020] [Indexed: 01/28/2023] Open
Abstract
Transient electrochemical strips with in-time degradability offer possibility for eco-friendly POCT detection.
Collapse
Affiliation(s)
- Tingting Tu
- Biosensor National Special Laboratory
- College of Biomedical Engineering and Instrument Science
- Zhejiang University
- Hangzhou 310027
- PR China
| | - Bo Liang
- Biosensor National Special Laboratory
- College of Biomedical Engineering and Instrument Science
- Zhejiang University
- Hangzhou 310027
- PR China
| | - Qingpeng Cao
- Biosensor National Special Laboratory
- College of Biomedical Engineering and Instrument Science
- Zhejiang University
- Hangzhou 310027
- PR China
| | - Lu Fang
- College of Automation
- Hangzhou Dianzi University
- Hangzhou 310018
- PR China
| | - Qin Zhu
- Biosensor National Special Laboratory
- College of Biomedical Engineering and Instrument Science
- Zhejiang University
- Hangzhou 310027
- PR China
| | - Yu Cai
- Biosensor National Special Laboratory
- College of Biomedical Engineering and Instrument Science
- Zhejiang University
- Hangzhou 310027
- PR China
| | - Xuesong Ye
- Biosensor National Special Laboratory
- College of Biomedical Engineering and Instrument Science
- Zhejiang University
- Hangzhou 310027
- PR China
| |
Collapse
|
40
|
Chen Y, Song J, Wu Y, Ding S, Hou P, Song H, Wang J, Zhong X. The resistive switching behaviors of a flexible device based on a SrTiO3film. ACTA ACUST UNITED AC 2019. [DOI: 10.1209/0295-5075/127/26001] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/20/2022]
|
41
|
Deswal S, Malode RR, Kumar A, Kumar A. Controlled inter-state switching between quantized conductance states in resistive devices for multilevel memory. RSC Adv 2019; 9:9494-9499. [PMID: 35520720 PMCID: PMC9062199 DOI: 10.1039/c9ra00726a] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/27/2019] [Accepted: 03/18/2019] [Indexed: 11/21/2022] Open
Abstract
A detailed understanding of quantization conductance (QC), the correlation with resistive switching phenomena and controlled manipulation of quantized states is crucial for realizing atomic-scale multilevel memory elements. Here, we demonstrate highly stable and reproducible quantized conductance states (QC-states) in Al/niobium oxide/Pt resistive switching devices. Three levels of control over the QC-states, required for multilevel quantized state memories, like, switching ON to different quantized states, switching OFF from quantized states, and controlled inter-state switching among one QC state to another has been demonstrated by imposing limiting conditions of stop-voltage and current compliance. The well-defined multiple QC states along with a working principle for switching among various states show promise for implementation of multilevel memory devices.
Collapse
Affiliation(s)
- Sweety Deswal
- Academy of Scientific and Innovative Research, CSIR-National Physical Laboratory Campus Dr. K. S. Krishnan Marg New Delhi 110012 India
- CSIR-National Physical Laboratory Dr. K. S. Krishnan Marg New Delhi 110012 India
| | - Rupali R Malode
- Maulana Azad National Institute of Technology Bhopal Madhya Pradesh 462003 India
| | - Ashok Kumar
- Academy of Scientific and Innovative Research, CSIR-National Physical Laboratory Campus Dr. K. S. Krishnan Marg New Delhi 110012 India
- CSIR-National Physical Laboratory Dr. K. S. Krishnan Marg New Delhi 110012 India
| | - Ajeet Kumar
- Academy of Scientific and Innovative Research, CSIR-National Physical Laboratory Campus Dr. K. S. Krishnan Marg New Delhi 110012 India
- CSIR-National Physical Laboratory Dr. K. S. Krishnan Marg New Delhi 110012 India
| |
Collapse
|
42
|
Zhou G, Sun B, Ren Z, Wang L, Xu C, Wu B, Li P, Yao Y, Duan S. Resistive switching behaviors and memory logic functions in single MnOx nanorod modulated by moisture. Chem Commun (Camb) 2019; 55:9915-9918. [DOI: 10.1039/c9cc04069b] [Citation(s) in RCA: 41] [Impact Index Per Article: 8.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
Abstract
Reversion between resistor and memristor and memory logic functions induced by moisture.
Collapse
Affiliation(s)
- Guangdong Zhou
- School of Science
- Guizhou institute of Technology
- Guiyang 55003
- China
- School of Artificial Intelligence
| | - Bai Sun
- School of Physical Science and Technology
- Southwest Jiaotong University
- Chengdu
- China
| | - Zhijun Ren
- School of Science
- Guizhou institute of Technology
- Guiyang 55003
- China
| | - Lidan Wang
- School of Physical Science and Technology
- Southwest Jiaotong University
- Chengdu
- China
| | - Cunyun Xu
- School of Artificial Intelligence
- Southwest University
- Chongqing 400715
- China
| | - Bo Wu
- School of Physics and Electronic Science
- Zunyi Normal College
- China
| | - Ping Li
- School of Physics and Electronic Science
- Zunyi Normal College
- China
| | - Yanqing Yao
- School of Artificial Intelligence
- Southwest University
- Chongqing 400715
- China
| | - Shukai Duan
- School of Artificial Intelligence
- Southwest University
- Chongqing 400715
- China
| |
Collapse
|