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Wan J, Zhang J, Liu F, Sa Z, Li P, Wang M, Wang G, Zang Z, Chen F, Yip S, Yang ZX. Toward High-Performance Self-Powered Near-Ultraviolet Photodetection by Constructing a Unipolar Heterojunction. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 39049155 DOI: 10.1021/acsami.4c07333] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/27/2024]
Abstract
Constructing a unipolar heterojunction is an effective energy band engineering strategy to improve the performance of photoelectric devices, which could suppress dark current and enhance detectivity by modulating the transfer of carriers. In this work, unipolar heterojunctions of Si/PbI2 and GaSb/PbI2 are constructed successfully for high-performance self-powered near-ultraviolet photodetection. Owing to the unique band offset of unipolar heterojunctions, the transport of holes is blocked, and only photogenerated electrons in PbI2 can flow unimpeded under the driving force of the built-in electric field. Thus, the recombination of photogenerated electron-hole pairs is suppressed, contributing to high-performance near-ultraviolet photodetection. The as-fabricated Si/PbI2 self-powered near-ultraviolet photodetector exhibits a low dark current of 10-13 A, a high Ilight/Idark ratio of 104, and fast response times of 26/24 ms, which are much better than those of the PbI2 metal-semiconductor-metal photodetector. Furthermore, the as-fabricated GaSb/PbI2 unipolar heterojunction photodetector also exhibits impressive self-powered near-ultraviolet photodetection behaviors. Evidently, this work shows the potential of unipolar heterojunctions for next-generation Si-based and GaSb-based high-performance photodetection.
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Affiliation(s)
- Junchen Wan
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Jie Zhang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Fengjing Liu
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Zixu Sa
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Pengsheng Li
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Mingxu Wang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Guangcan Wang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Zeqi Zang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - Feng Chen
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
| | - SenPo Yip
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka 8168580, Japan
| | - Zai-Xing Yang
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
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2
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Wan Z, Chen Z, Shi L, Zheng A, Min J, Shen C, Du B, Guo Y, Gao X, Yin J, Ge H, Niu S, Lu H, Yin K, Wu D, Liu Z, Xia Y. Room-Temperature Growth of Square-Millimeter Single-Crystalline Two-Dimensional Metal Halides on Silicon. ACS NANO 2024; 18:15096-15106. [PMID: 38810232 DOI: 10.1021/acsnano.4c02336] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2024]
Abstract
Silicon is the cornerstone of electronics and photonics. In this context, almost all integrated devices derived from two-dimensional (2D) materials stay rooted in silicon technology. However, as the growth substrate, silicon has long been thought to be a hindrance for growing 2D materials through bottom-up methods that require high growth temperatures, and thus, indirect routes are usually considered instead. Although promising growth of large-area 2D materials on silicon has been demonstrated, the direct growth of single-crystalline materials using low-thermal-budget synthesis methods remains challenging. Here, we report the room-temperature growth of millimeter-scale single-crystal 2D metal halides on silicon substrates with a hydroxyl-terminated surface. Theoretical calculations reveal that the activation energy for surface diffusion can be reduced by an order of magnitude by terminating the surface with hydroxyl groups, from which on-silicon growth is greatly facilitated at room temperature and enables a 4-order-of-magnitude increase in area. The high quality and uniformity of the resulting single crystals are further evidenced. The optoelectronic devices employing the as-grown materials show an ultralow dark current of 10-13 A and a high detectivity of 1013 Jones, thereby corroborating a weak-light detection ability. These results would point to a rich space of surface modulation that can be used to surmount current limitations and demonstrate a promising strategy for growing 2D materials directly on silicon at room temperature to produce large single crystals.
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Affiliation(s)
- Zuteng Wan
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Zhiwen Chen
- Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S3E4, Canada
| | - Lei Shi
- Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Anqi Zheng
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096, China
| | - Jin Min
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Cong Shen
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Bingfeng Du
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Yanhua Guo
- College of Materials Science and Engineering, Tech Institute for Advanced Materials, Nanjing Tech University, Nanjing 211816, China
| | - Xu Gao
- Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou 215123, China
| | - Jiang Yin
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Haixiong Ge
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Shanyuan Niu
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Haiming Lu
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Kuibo Yin
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096, China
| | - Di Wu
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Zhiguo Liu
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Yidong Xia
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
- National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
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3
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Tang J, Ge F, Chen J, Zhou D, Zhan G, Liu J, Yuan J, Shi X, Zhao P, Fan X, Su Y, Liu Z, He J, Tang J, Zha C, Zhang L, Song X, Wang L. A Droplet Method for Synthesis of Multiclass Ultrathin Metal Halides. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2301573. [PMID: 37365697 DOI: 10.1002/smll.202301573] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/21/2023] [Revised: 05/28/2023] [Indexed: 06/28/2023]
Abstract
2D metal halides have attracted increasing research attention in recent years; however, it is still challenging to synthesize them via liquid-phase methods. Here it is demonstrated that a droplet method is simple and efficient for the synthesis of multiclass 2D metal halides, including trivalent (BiI3 , SbI3 ), divalent (SnI2 , GeI2 ), and monovalent (CuI) ones. In particular, 2D SbI3 is first experimentally achieved, of which the thinnest thickness is ≈6 nm. The nucleation and growth of these metal halide nanosheets are mainly determined by the supersaturation of precursor solutions that are dynamically varying during the solution evaporation. After solution drying, the nanosheets can fall on the surface of many different substrates, which further enables the feasible fabrication of related heterostructures and devices. With SbI3 /WSe2 being a good demonstration, the photoluminescence intensity and photo responsivity of WSe2 is obviously enhanced after interfacing with SbI3 . The work opens a new pathway for 2D metal halides toward widespread investigation and applications.
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Affiliation(s)
- Jin Tang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Feixiang Ge
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Jinlian Chen
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Dawei Zhou
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Guixiang Zhan
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Jing Liu
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Jiaxiao Yuan
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Xinyu Shi
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Peiyi Zhao
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Xinlin Fan
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Yu Su
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Zicong Liu
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Jiahao He
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Jiaqi Tang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Chenyang Zha
- Institute of Applied Physics and Materials Engineering (IAPME), Zhuhai UM Science & Technology Research Institute (ZUMRI), University of Macau, Taipa, Macau SAR, 999078, China
| | - Linghai Zhang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Xuefen Song
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Lin Wang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
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4
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Su L, Zeng Q, Tan Z, Liu F, Ma H. A photodetector fabricated from 2H-PbI 2 micro-crystals recycled from waste lead acid batteries. OPTICS LETTERS 2023; 48:872-875. [PMID: 36790963 DOI: 10.1364/ol.480972] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/14/2022] [Accepted: 01/09/2023] [Indexed: 06/18/2023]
Abstract
Recycling Pb from lead acid batteries is rather important in environmental protection, but current strategies need a high temperature or produce secondary pollution. Herein, we present a green reactant recycling method to synthesize PbI2 micro-crystals by extracting the Pb from waste lead acid batteries. Systematical characterizations indicate that the as-prepared PbI2 micro-crystals show high purity, high crystal quality with a 2H-hexagonal crystal structure, and excellent optical properties with a bandgap of 2.3 eV. Based on the recycled 2H-PbI2 micro-crystals, a symmetrically structured ITO/PbI2/ITO photodetector is fabricated. Under 10 V bias voltage, the device reveals a distinct photo-response to UV-visible light and superior performance, with a dark current of 1.06 nA, an on-off ratio of 103, a responsivity of 15.5 mA/W, and a detectivity of 4.7 × 1010 Hz1/2 W-1. In addition, the photodetector also exhibits relatively rapid response speeds of 69 ms (rise time) and 64 ms (decay time). Our study provides an innovative and green strategy for producing a UV-visible photodetector based on recycled lead acid batteries, which is significant in environmental protection and the recycling economy.
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5
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Liu S, Li H, Lu H, Wang Y, Wen X, Deng S, Li MY, Liu S, Wang C, Li X. High Performance 0D ZnO Quantum Dot/2D (PEA) 2PbI 4 Nanosheet Hybrid Photodetectors Fabricated via a Facile Antisolvent Method. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:4217. [PMID: 36500840 PMCID: PMC9738548 DOI: 10.3390/nano12234217] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/07/2022] [Revised: 11/23/2022] [Accepted: 11/24/2022] [Indexed: 06/17/2023]
Abstract
Two-dimensional (2D) organic-inorganic perovskites have great potential for the fabrication of next-generation photodetectors owing to their outstanding optoelectronic features, but their utilization has encountered a bottleneck in anisotropic carrier transportation induced by the unfavorable continuity of the thin films. We propose a facile approach for the fabrication of 0D ZnO quantum dot (QD)/2D (PEA)2PbI4 nanosheet hybrid photodetectors under the atmospheric conditions associated with the ZnO QD chloroform antisolvent. Profiting from the antisolvent, the uniform morphology of the perovskite thin films is obtained owing to the significantly accelerated nucleation site formation and grain growth rates, and ZnO QDs homogeneously decorate the surface of (PEA)2PbI4 nanosheets, which spontaneously passivate the defects on perovskites and enhance the carrier separation by the well-matched band structure. By varying the ZnO QD concentration, the Ion/Ioff ratio of the photodetectors radically elevates from 78.3 to 1040, and a 12-fold increase in the normalized detectivity is simultaneously observed. In addition, the agglomeration of perovskite grains is governed by the annealing temperature, and the photodetector fabricated at a relatively low temperature of 120 °C exhibits excellent stability after a 50-cycle test in the air condition without any encapsulation.
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Affiliation(s)
- Shijie Liu
- School of Science, Wuhan University of Technology, Wuhan 430070, China
| | - Hao Li
- School of Science, Wuhan University of Technology, Wuhan 430070, China
| | - Haifei Lu
- School of Science, Wuhan University of Technology, Wuhan 430070, China
| | - Yanran Wang
- School of Science, Wuhan University of Technology, Wuhan 430070, China
| | - Xiaoyan Wen
- School of Science, Wuhan University of Technology, Wuhan 430070, China
| | - Shuo Deng
- School of Science, Wuhan University of Technology, Wuhan 430070, China
| | - Ming-Yu Li
- School of Science, Wuhan University of Technology, Wuhan 430070, China
| | - Sisi Liu
- School of Science, Wuhan University of Technology, Wuhan 430070, China
| | - Cong Wang
- School of Electronics and Information Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Xiao Li
- Hisense Visual Technology Co., Ltd., Qingdao 266555, China
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6
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Liu D, Chen R, Liu F, Zhang J, Zhuang X, Yin Y, Wang M, Sa Z, Wang P, Sun L, Pang Z, Tan Y, Jia Z, Chen M, Yang ZX. Flexible Omnidirectional Self-Powered Photodetectors Enabled by Solution-Processed Two-Dimensional Layered PbI 2 Nanoplates. ACS APPLIED MATERIALS & INTERFACES 2022; 14:46748-46755. [PMID: 36196627 DOI: 10.1021/acsami.2c13373] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Realizing omnidirectional self-powered photodetectors is central to advancing next-generation portable and smart photodetector systems. However, the traditional omnidirectional photodetector is typically achieved by integrating complex hemispherical microlens on multiple photodetectors, which makes the detection system cumbersome and restricts its application in the portable field. Here, facile and high-performance flexible omnidirectional self-powered photodetectors are achieved by solution-processed two-dimensional (2D) layered PbI2 nanoplates on transparent conducting substrates. Characterization of PbI2 nanoplates microstructural/compositional and their photodetection properties have been systematically characterized. Under the irradiation of a 405 nm laser, the photodetectors exhibit an impressively low dark current of 10-13 A, a high light on/off ratio up to 106, and a fast rise/decay response time of 2/3 ms. Importantly, when light irradiates the photodetector at 5°, it can still maintain high photodetection properties, realizing almost 360° omnidirectional self-powered photodetection. What is more, these self-powered photodetectors exhibit robust omnidirectional photoresponse stability of flexibility even after bending for 1200 cycles. Thus, this work broadens the applicability of 2D layered nanoplates for further extending its applications in advanced optoelectronic devices.
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Affiliation(s)
- Dong Liu
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Ruichang Chen
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Fengjing Liu
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Jie Zhang
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Xinming Zhuang
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Yanxue Yin
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Mingxu Wang
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Zixu Sa
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Peng Wang
- College of Electronic and Information Engineering, Shandong University of Science and Technology, Qingdao 266590, China
| | - Li Sun
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Zhiyong Pang
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Yang Tan
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Zhitai Jia
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Ming Chen
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250100, China
| | - Zai-Xing Yang
- School of Physics, State Key Laboratory of Crystal Materials, School of Microelectronics, Shandong University, Jinan 250100, China
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7
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Hadia NMA, Shaban M, Mohamed SH, Al‐Ghamdi AF, Alzaid M, Elsayed AM, Mourad AHI, Amin MA, Boukherroub R, Abdelazeez AAA, Rabia M. Highly crystalline hexagonal
PbI
2
sheets on polyaniline/antimony tin oxide surface as a novel and highly efficient photodetector in
UV
, Vis, and near
IR
regions. POLYM ADVAN TECHNOL 2022. [DOI: 10.1002/pat.5829] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
Affiliation(s)
- Nomery M. A. Hadia
- Physics Department, College of Science Jouf University Sakaka Saudi Arabia
- Basic Sciences Research Unit Jouf University Sakaka Saudi Arabia
| | - Mohamed Shaban
- Nanophotonics and Applications Lab, Physics Department, Faculty of Science Beni‐Suef University Beni‐Suef Egypt
- Physics Department, Faculty of Science Islamic University of Madinah Madinah Saudi Arabia
| | - S. H. Mohamed
- Physics Department, Faculty of Science Sohag University Sohag Egypt
| | - Ali F. Al‐Ghamdi
- Chemistry Department, Faculty of Science Taibah University Al‐Madinah Saudi Arabia
| | - Meshal Alzaid
- Physics Department, College of Science Jouf University Sakaka Saudi Arabia
| | - Asmaa M. Elsayed
- Nanophotonics and Applications Lab, Physics Department, Faculty of Science Beni‐Suef University Beni‐Suef Egypt
| | | | - Mohammed A. Amin
- Materials and Corrosion Group, Department of Chemistry, Faculty of Science Taif University Hawiya Saudi Arabia
| | - Rabah Boukherroub
- University of Lille, CNRS, Centrale Lille Université Polytechnique Hauts‐de‐France, UMR 8520 – IEMN Lille France
| | - Ahmed Adel A. Abdelazeez
- Nanoscale Science, Chemistry Department University of North Carolina at Charlotte Charlotte North Carolina USA
| | - Mohamed Rabia
- Nanophotonics and Applications Lab, Physics Department, Faculty of Science Beni‐Suef University Beni‐Suef Egypt
- Nanomaterials Science Research Laboratory, Chemistry Department, Faculty of Science Beni‐Suef University Beni‐Suef Egypt
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8
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Liu JY, Wang JJ, Lin DH, Wang J, Fu C, Liang FX, Li X, Gu ZP, Wu D, Luo LB. Sensitive Silicon Nanowire Ultraviolet B Photodetector Induced by Leakage Mode Resonances. ACS APPLIED MATERIALS & INTERFACES 2022; 14:32341-32349. [PMID: 35797443 DOI: 10.1021/acsami.2c04606] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Ultraviolet photodetectors (UVPDs) have played an important role both in civil and military applications. While various studies have shown that traditional UVPDs based on wide-band-gap semiconductors (WBSs) have excellent device performances, it is, however, undeniable that the practical application of WBS-based UVPDs is largely limited by the relatively high fabrication cost. In this work, we propose a new silicon nanowire (Si NW) UVPD that is very sensitive to UVB light illumination. The Si NWs with a diameter of about 36 nm are fabricated by a metal-assisted chemical etching method. Performance analysis revealed that the Si NW device was only sensitive to UVB light and almost blind to illumination in the visible and near-infrared regions. Such abnormal spectral selectivity was associated with the leakage mode resonances (LMRs) of the small diameter, according to our theoretical simulation. Under 300 nm illumination, the responsivity, external quantum efficiency, and specific detectivity were estimated to be 10.2 AW-1, 4.22 × 103%, and 2.14 × 1010 Jones, respectively, which were comparable to or even higher than those of some WBS-based UVPDs. These results illustrate that the small dimension Si NWs are potential building blocks for low-cost and high-performance UVPDs in the future.
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Affiliation(s)
- Jia-Yin Liu
- School of Microelectronics, Hefei University of Technology, Hefei 230009, China
| | - Jun-Jie Wang
- School of Microelectronics, Hefei University of Technology, Hefei 230009, China
| | - Di-Hua Lin
- School of Physics, Hefei University of Technology, Hefei 230009, China
| | - Jiang Wang
- School of Microelectronics, Hefei University of Technology, Hefei 230009, China
| | - Can Fu
- School of Microelectronics, Hefei University of Technology, Hefei 230009, China
| | - Feng-Xia Liang
- School of Microelectronics, Hefei University of Technology, Hefei 230009, China
| | - Xiang Li
- School of Microelectronics, Hefei University of Technology, Hefei 230009, China
| | - Zi-Peng Gu
- School of Microelectronics, Hefei University of Technology, Hefei 230009, China
| | - Di Wu
- Key Laboratory of Materials Physics of Ministry of Education, Department of Physics and Engineering, Zhengzhou University, Zhengzhou 450052, China
| | - Lin-Bao Luo
- School of Microelectronics, Hefei University of Technology, Hefei 230009, China
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9
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Dang Y, Kutsukake K, Liu X, Inoue Y, Liu X, Seki S, Zhu C, Harada S, Tagawa M, Ujihara T. A Transfer Learning‐Based Method for Facilitating the Prediction of Unsteady Crystal Growth. ADVANCED THEORY AND SIMULATIONS 2022. [DOI: 10.1002/adts.202200204] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
Affiliation(s)
- Yifan Dang
- Graduate School of Engineering Nagoya University Furo‐cho Chikusa‐ku Nagoya 464‐8603 Japan
| | - Kentaro Kutsukake
- Institute of Materials and Systems for Sustainability (IMaSS) Nagoya University Furo‐cho Chikusa‐ku Nagoya 464‐8603 Japan
- Center for Advanced Intelligence Project RIKEN Nihonbashi Chuo‐ku Tokyo 103‐0027 Japan
| | - Xin Liu
- Institute of Materials and Systems for Sustainability (IMaSS) Nagoya University Furo‐cho Chikusa‐ku Nagoya 464‐8603 Japan
| | - Yoshiki Inoue
- Graduate School of Engineering Nagoya University Furo‐cho Chikusa‐ku Nagoya 464‐8603 Japan
| | - Xinbo Liu
- Graduate School of Engineering Nagoya University Furo‐cho Chikusa‐ku Nagoya 464‐8603 Japan
| | - Shota Seki
- Graduate School of Engineering Nagoya University Furo‐cho Chikusa‐ku Nagoya 464‐8603 Japan
| | - Can Zhu
- Institute of Materials and Systems for Sustainability (IMaSS) Nagoya University Furo‐cho Chikusa‐ku Nagoya 464‐8603 Japan
| | - Shunta Harada
- Graduate School of Engineering Nagoya University Furo‐cho Chikusa‐ku Nagoya 464‐8603 Japan
- Institute of Materials and Systems for Sustainability (IMaSS) Nagoya University Furo‐cho Chikusa‐ku Nagoya 464‐8603 Japan
| | - Miho Tagawa
- Graduate School of Engineering Nagoya University Furo‐cho Chikusa‐ku Nagoya 464‐8603 Japan
- Institute of Materials and Systems for Sustainability (IMaSS) Nagoya University Furo‐cho Chikusa‐ku Nagoya 464‐8603 Japan
| | - Toru Ujihara
- Graduate School of Engineering Nagoya University Furo‐cho Chikusa‐ku Nagoya 464‐8603 Japan
- Institute of Materials and Systems for Sustainability (IMaSS) Nagoya University Furo‐cho Chikusa‐ku Nagoya 464‐8603 Japan
- GaN Advanced Device Open Innovation Laboratory (GaN‐OIL) National Institute of Advanced Industrial Science and Technology (AIST) Nagoya University Furo‐cho Chikusa‐ku Nagoya 464‐8601 Japan
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10
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Yan J, Ou Q, Vincenti MA, De Angelis C, Bao Q, Neshev DN. Nonlinear microscopy of lead iodide nanosheets. OPTICS EXPRESS 2022; 30:4793-4805. [PMID: 35209453 DOI: 10.1364/oe.451214] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/16/2021] [Accepted: 01/17/2022] [Indexed: 06/14/2023]
Abstract
Lead iodide (PbI2) is a van der Waals layered semiconductor with a direct bandgap in its bulk form and a hexagonal layered crystalline structure. The recently developed PbI2 nanosheets have shown great promise for high-performance optoelectronic devices, including nanolasers and photodetectors. However, despite being widely used as a precursor for perovskite materials, the optical properties of PbI2 nanomaterials remain largely unexplored. Here, we determine the nonlinear optical properties of PbI2 nanosheets by utilising nonlinear microscopy as a non-invasive optical technique. We demonstrate the nonlinearity enhancement dependent on excitonic resonances, crystalline orientation, thickness, and influence of the substrate. Our results allow for estimating the second- and third-order nonlinear susceptibilities of the nanosheets, opening new opportunities for the use of PbI2 nanosheets as nonlinear and quantum light sources.
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11
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Yao J, Yang G. 2D Layered Material Alloys: Synthesis and Application in Electronic and Optoelectronic Devices. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2103036. [PMID: 34719873 PMCID: PMC8728821 DOI: 10.1002/advs.202103036] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/15/2021] [Revised: 09/01/2021] [Indexed: 05/12/2023]
Abstract
2D layered materials (2DLMs) have come under the limelight of scientific and engineering research and broke new ground across a broad range of disciplines in the past decade. Nevertheless, the members of stoichiometric 2DLMs are relatively limited. This renders them incompetent to fulfill the multitudinous scenarios across the breadth of electronic and optoelectronic applications since the characteristics exhibited by a specific material are relatively monotonous and limited. Inspiringly, alloying of 2DLMs can markedly broaden the 2D family through composition modulation and it has ushered a whole new research domain: 2DLM alloy nano-electronics and nano-optoelectronics. This review begins with a comprehensive survey on synthetic technologies for the production of 2DLM alloys, which include chemical vapor transport, chemical vapor deposition, pulsed-laser deposition, and molecular beam epitaxy, spanning their development, as well as, advantages and disadvantages. Then, the up-to-date advances of 2DLM alloys in electronic devices are summarized. Subsequently, the up-to-date advances of 2DLM alloys in optoelectronic devices are summarized. In the end, the ongoing challenges of this emerging field are highlighted and the future opportunities are envisioned, which aim to navigate the coming exploration and fully exert the pivotal role of 2DLMs toward the next generation of electronic and optoelectronic devices.
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Affiliation(s)
- Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
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12
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Zhu Q, Ye P, Tang Y, Zhu X, Cheng Z, Xu J, Xu M. High-performance broadband photoresponse of self-powered Mg 2Si/Si photodetectors. NANOTECHNOLOGY 2021; 33:115202. [PMID: 34874315 DOI: 10.1088/1361-6528/ac3f53] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/29/2021] [Accepted: 12/02/2021] [Indexed: 06/13/2023]
Abstract
Infrared optoelectronic devices are capable of operating in harsh environments with outstanding confidentiality and reliability. Nevertheless, suffering from the large band gap value, most semiconductor materials are difficult to detect infrared light signals. Here, Mg2Si/Si heterojunction photodetectors (PDs), which possess the advantages of low-cost, easy process, environmental friendliness, and compatibility with silicon CMOS technology, have been reported with a broadband spectral response as tested from 532 to 1550 nm under zero-bias. When the incident light wavelength is 808 nm, the Mg2Si/Si photodetector (PD) has a responsivity of 1.04 A W-1and a specific detectivity of 1.51 × 1012Jones. Furthermore, we find that the Ag nanoparticles (Ag_NPs) assembled on the Mg2Si layer can greatly improve the performance of the Mg2Si/Si PD. The responsivity and specific detectivity of Mg2Si/Si device with Ag_NPs under 808 nm illumination are 2.55 A W-1and 2.60 × 1012Jones, respectively. These excellent photodetection performances can be attributed to the high-quality of our grown Mg2Si material and the strong built-in electric field effect in the heterojunction, which can be further enhanced by the local surface plasmon effect and local electromagnetic field induced by Ag_NPs. Our study would provide significant guidance for the development of new self-powered infrared PDs based on silicon materials.
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Affiliation(s)
- Qinghai Zhu
- School of Micro-Nano Electronics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Peng Ye
- School of Micro-Nano Electronics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Youmei Tang
- School of Micro-Nano Electronics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Xiaodong Zhu
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Zhiyuan Cheng
- School of Micro-Nano Electronics, Zhejiang University, Hangzhou 311200, People's Republic of China
| | - Jing Xu
- Optical Communications Laboratory, Ocean College, Zhejiang University, Zheda Road 1, Zhoushan, Zhejiang 316021 People's Republic of China
| | - Mingsheng Xu
- School of Micro-Nano Electronics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
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13
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Ham A, Kim TS, Kang M, Cho H, Kang K. Strategies for chemical vapor deposition of two-dimensional organic-inorganic halide perovskites. iScience 2021; 24:103486. [PMID: 34927028 PMCID: PMC8649807 DOI: 10.1016/j.isci.2021.103486] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/06/2021] [Revised: 10/06/2021] [Accepted: 11/19/2021] [Indexed: 11/08/2022] Open
Abstract
Two-dimensional (2D) organic-inorganic halide perovskites (OIHPs) with an alternating stacked structure of an organic layer and an inorganic layer draw significant attention for photovoltaics, multiple quantum-well, and passivation of three-dimensional perovskites. Although the low-cost and simple spin-coating process of these materials offers a vast platform to study fundamental properties and help them achieve rapid progress in electronics and optoelectronics, chemical vapor deposition (CVD) growth is also necessary for large-area, epitaxial, selective, and conformal growth. Here, one-step CVD strategies for 2D OIHP growth are proposed, and the growth trends depending on the precursor and substrate conditions are discussed. We report a CVD-grown nontoxic, lead-free 2D tin-OIHP flake to show the system offering a universal route to synthesize perovskite crystals based on arbitrary organic and inorganic components.
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Affiliation(s)
- Ayoung Ham
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Tae Soo Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Minsoo Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Himchan Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Kibum Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
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14
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Ma H, Wu X, Du W, Zhao L, Zhong Y, Chen S, Gao P, Yue S, Zhang Q, Liu W, Liu X. Edge Raman enhancement at layered PbI 2platelets induced by laser waveguide effect. NANOTECHNOLOGY 2021; 33:035203. [PMID: 34627132 DOI: 10.1088/1361-6528/ac2e5a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/13/2021] [Accepted: 10/09/2021] [Indexed: 06/13/2023]
Abstract
As a two-dimensional (2D) layered semiconductor, lead iodide (PbI2) has been widely used in optoelectronics owing to its unique crystal structure and distinctive optical and electrical properties. A comprehensive understanding of its optical performance is essential for further application and progress. Here, we synthesized regularly shaped PbI2platelets using the chemical vapor deposition method. Raman scattering spectroscopy of PbI2platelets was predominantly enhanced when the laser radiated at the edge according to Raman mapping spectroscopy. Combining the outcome of polarized Raman scattering spectroscopy and finite-difference time domain simulation analysis, the Raman enhancement was proven to be the consequence of the enhancement effects inherent to the high refractive index contrast waveguide, which is naturally formed in well-defined PbI2platelets. Because of the enlarged excited area determined by the increased propagation length of the laser in the PbI2platelet formed waveguide, the total Raman enhancements are acquired rather than a localized point enhancement. Finally, the Raman enhancement factor is directly related to the thickness of the PbI2platelet, which further confirms the waveguide-enhanced edge Raman. Our investigation of the optical properties of PbI2platelets offers reference for potential 2D layered-related optoelectronic applications.
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Affiliation(s)
- Heyi Ma
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Xianxin Wu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Wenna Du
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
| | - Liyun Zhao
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Yangguang Zhong
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Shulin Chen
- Electron Microscopy Laboratory, International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Peng Gao
- Electron Microscopy Laboratory, International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Shuai Yue
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Qing Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Wei Liu
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Xinfeng Liu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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15
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Yu H, Liao Q, Kang Z, Wang Z, Liu B, Zhang X, Du J, Ou Y, Hong M, Xiao J, Zhang Z, Zhang Y. Atomic-Thin ZnO Sheet for Visible-Blind Ultraviolet Photodetection. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2005520. [PMID: 33136343 DOI: 10.1002/smll.202005520] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/05/2020] [Indexed: 06/11/2023]
Abstract
The atomic-thin 2D semiconductors have emerged as plausible candidates for future optoelectronics with higher performance in terms of the scaling process. However, currently reported 2D photodetectors still have huge shortcomings in ultraviolet and especially visible-blind wavelengths. Here, a simple and nontoxic surfactant-assisted synthesis strategy is reported for the controllable growth of atomically thin (1.5 to 4 nm) ZnO nanosheets with size ranging from 3 to 30 µm. Benefit from the short carbon chains and the water-soluble ability of sodium dodecyl sulfate (SDS), the synthesized ZnO nanosheets possess high crystal quality and clean surface, leading to good compatibility with traditional micromanufacturing technology and high sensitivity to UV light. The photodetectors constructed with ZnO demonstrate the highest responsivity (up to 2.0 × 104 A W-1 ) and detectivity (D* = 6.83 × 1014 Jones) at a visible-blind wavelength of 254 nm, and the photoresponse speed is optimized by the 400 °C annealing treatment (τR = 3.97 s, τD = 5.32 s), thus the 2D ZnO can serve as a promising material to fill in the gap for deep-UV photodetection. The method developed here opens a new avenue to controllably synthesize 2D nonlayered materials and accelerates their applications in high-performance optoelectronic devices.
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Affiliation(s)
- Huihui Yu
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Qingliang Liao
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Zhuo Kang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Zhenyu Wang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Baishan Liu
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Xiankun Zhang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Junli Du
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Yang Ou
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Mengyu Hong
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Jiankun Xiao
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Zheng Zhang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Yue Zhang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
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16
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Zhang D, Liu Y, He M, Zhang A, Chen S, Tong Q, Huang L, Zhou Z, Zheng W, Chen M, Braun K, Meixner AJ, Wang X, Pan A. Room temperature near unity spin polarization in 2D Van der Waals heterostructures. Nat Commun 2020; 11:4442. [PMID: 32895376 PMCID: PMC7477097 DOI: 10.1038/s41467-020-18307-w] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/31/2020] [Accepted: 07/28/2020] [Indexed: 11/09/2022] Open
Abstract
The generation and manipulation of spin polarization at room temperature are essential for 2D van der Waals (vdW) materials-based spin-photonic and spintronic applications. However, most of the high degree polarization is achieved at cryogenic temperatures, where the spin-valley polarization lifetime is increased. Here, we report on room temperature high-spin polarization in 2D layers by reducing its carrier lifetime via the construction of vdW heterostructures. A near unity degree of polarization is observed in PbI2 layers with the formation of type-I and type-II band aligned vdW heterostructures with monolayer WS2 and WSe2. We demonstrate that the spin polarization is related to the carrier lifetime and can be manipulated by the layer thickness, temperature, and excitation wavelength. We further elucidate the carrier dynamics and measure the polarization lifetime in these heterostructures. Our work provides a promising approach to achieve room temperature high-spin polarizations, which contribute to spin-photonics applications.
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Affiliation(s)
- Danliang Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Ying Liu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Mai He
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Ao Zhang
- Key Laboratory for Matter Microstructure and Function of Hunan Province, School of Physics and Electronics, Hunan Normal University, Changsha, 410081, China
| | - Shula Chen
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Qingjun Tong
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Lanyu Huang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Zhiyuan Zhou
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Weihao Zheng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Mingxing Chen
- Key Laboratory for Matter Microstructure and Function of Hunan Province, School of Physics and Electronics, Hunan Normal University, Changsha, 410081, China
| | - Kai Braun
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China
- Institute of Physical and Theoretical Chemistry and LISA+, University of Tübingen, Auf der Morgenstelle 18, 72076, Tübingen, Germany
| | - Alfred J Meixner
- Institute of Physical and Theoretical Chemistry and LISA+, University of Tübingen, Auf der Morgenstelle 18, 72076, Tübingen, Germany
| | - Xiao Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha, 410082, China.
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China.
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17
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Xiao H, Liang T, Zhang X, Zhao P, Pi X, Xie Q, Xu M. Cera alba-assisted ultraclean graphene transfer for high-performance PbI 2 UV photodetectors. NANOTECHNOLOGY 2020; 31:365204. [PMID: 32464614 DOI: 10.1088/1361-6528/ab9789] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Large polymer residues introduced by the graphene transfer process is still a major obstacle limiting the integration of chemical vapor deposition (CVD)-grown graphene into next-generation electronic and photoelectronic devices. Here we use cera alba, a natural and environmental-friendly material that derives from honeycomb, as the supporting layer for ultraclean graphene transfer. The transferred graphene has a low surface roughness with a surface height fluctuation within 5 nm and an only 80.08% average sheet resistance of the polymethyl methacrylate (PMMA)-transferred graphene. Further, the ultraclean graphene is used as electrodes for the PbI2-based UV photodetector and enables a 135% improvement on responsivity. The cera alba assisted transfer method reported here could achieve clean and damage-free graphene transfer, promoting the application of CVD-grown two-dimensional (2D) materials in large-area thin-film electronic and optoelectronic devices.
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Affiliation(s)
- Han Xiao
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China. State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
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18
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Ouyang L, Armstrong JPK, Chen Q, Lin Y, Stevens MM. Void-free 3D Bioprinting for In-situ Endothelialization and Microfluidic Perfusion. ADVANCED FUNCTIONAL MATERIALS 2020; 30:1909009. [PMID: 35677899 DOI: 10.1002/adfm.201909909] [Citation(s) in RCA: 99] [Impact Index Per Article: 24.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/27/2019] [Indexed: 05/21/2023]
Abstract
Two major challenges of 3D bioprinting are the retention of structural fidelity and efficient endothelialization for tissue vascularization. We address both of these issues by introducing a versatile 3D bioprinting strategy, in which a templating bioink is deposited layer-by-layer alongside a matrix bioink to establish void-free multimaterial structures. After crosslinking the matrix phase, the templating phase is sacrificed to create a well-defined 3D network of interconnected tubular channels. This void-free 3D printing (VF-3DP) approach circumvents the traditional concerns of structural collapse, deformation and oxygen inhibition, moreover, it can be readily used to print materials that are widely considered "unprintable". By pre-loading endothelial cells into the templating bioink, the inner surface of the channels can be efficiently cellularized with a confluent endothelial layer. This in-situ endothelialization method can be used to produce endothelium with a far greater uniformity than can be achieved using the conventional post-seeding approach. This VF-3DP approach can also be extended beyond tissue fabrication and towards customized hydrogel-based microfluidics and self-supported perfusable hydrogel constructs.
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Affiliation(s)
- Liliang Ouyang
- Department of Materials, Department of Bioengineering, Institute of Biomedical Engineering, Imperial College London, London, SW7 2AZ, UK
| | - James P K Armstrong
- Department of Materials, Department of Bioengineering, Institute of Biomedical Engineering, Imperial College London, London, SW7 2AZ, UK
| | - Qu Chen
- Department of Materials, Department of Bioengineering, Institute of Biomedical Engineering, Imperial College London, London, SW7 2AZ, UK
| | - Yiyang Lin
- Department of Materials, Department of Bioengineering, Institute of Biomedical Engineering, Imperial College London, London, SW7 2AZ, UK
| | - Molly M Stevens
- Department of Materials, Department of Bioengineering, Institute of Biomedical Engineering, Imperial College London, London, SW7 2AZ, UK
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19
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Du Z, Fu D, Teng J, Wang L, Gao F, Yang W, Zhang H, Fang X. CsPbI 3 Nanotube Photodetectors with High Detectivity. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2019; 15:e1905253. [PMID: 31769610 DOI: 10.1002/smll.201905253] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/15/2019] [Revised: 11/07/2019] [Indexed: 06/10/2023]
Abstract
In the present work, the exploration of photodetectors (PDs) based on CsPbI3 nanotubes are reported. The as-prepared CsPbI3 nanotubes can be stable for more than 2 months under air conditions. It is found that, in comparison to the nanowires, nanobelts, and nanosheets, the nanotubes can be advantageous to be used as the functional units for PDs, which is mainly attributed to the enhanced light absorption ability induced by the light trapping effect within the tube cavity. As a proof of concept, the as-constructed PDs based on CsPbI3 nanotube present an overall excellent performance with a responsivity (Rλ ), external quantum efficiency (EQE) and detectivity of 1.84 × 103 A W-1 , 5.65 × 105 % and 9.99 × 1013 Jones, respectively, which are all comparable to state-of-the-art ones for all-inorganic perovskite PDs.
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Affiliation(s)
- Zhentao Du
- College of Materials Science and Engineering, Hunan University, Changsha, 410082, P. R. China
- Institute of Materials, Ningbo University of Technology, Ningbo, 315016, P. R. China
| | - Dingfa Fu
- College of Materials Science and Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Jie Teng
- College of Materials Science and Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Lin Wang
- Institute of Materials, Ningbo University of Technology, Ningbo, 315016, P. R. China
| | - Fengmei Gao
- Institute of Materials, Ningbo University of Technology, Ningbo, 315016, P. R. China
| | - Weiyou Yang
- Institute of Materials, Ningbo University of Technology, Ningbo, 315016, P. R. China
| | - Hui Zhang
- College of Materials Science and Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Xiaosheng Fang
- Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
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