Highly Efficient and Super Stable Full-Color Quantum Dots Light-Emitting Diodes with Solution-Processed All-Inorganic Charge Transport Layers

Dipole Modulation Engineering Enhances Structural Order of PEDOT:PSS for Efficient and Stable InP-Based QLEDs

Indium phosphide (InP)-based quantum dot light-emitting diodes (QLEDs) are promising for future lighting and display applications due to their high color purity and brightness. However, their efficiency and stability are often limited by the disordered structure of the widely used poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS), which impairs charge transport. Herein, we present a strategy to enhance the performance of InP-based QLEDs by modifying PEDOT:PSS through interfacial dipole modulation using molybdenum oxide (MoOx) nanoparticles. The strong hydrogen bonding between MoOx and PSS creates strong dipole-dipole interactions, reducing the separation of PEDOT-rich regions, enhancing π-π stacking and conductivity. This optimization facilitates balanced electron and hole injection, increasing external quantum efficiency (EQE) from 12.2% in control devices to 17.8% in the treated devices, along with a brightness enhancement from 32,998 to 43,567 cd m-2. Notably, our treated devices exhibit a reduction in efficiency attenuation compared to other reported InP-based QLEDs, particularly at high brightness levels of 5000 and 10,000 cd m-2, with EQE attenuation of only 4 and 9%, respectively, compared to 16 and 30% for controls. This work highlights the potential of dipole engineering in advancing InP-based QLED technology, providing a pathway for developing high-performance, stable, and eco-friendly lighting and displays.

Recent progresses and challenges in colloidal quantum dot light-emitting diodes: a focus on electron transport layers with metal oxide nanoparticles and organic semiconductors

Colloidal quantum dots (QDs) are highly promising for display technologies due to their distinctive optical characteristics, such as tunable emission wavelengths, narrow emission spectra, and superb photoluminescence quantum yields. Over the last decade, both academic and industrial research have substantially advanced quantum dot light-emitting diode (QLED) technology, primarily through the development of higher-quality QDs and more refined device structures. A key element of these advancements includes progress in the electron transport layer (ETL) technology, with metal oxide (MO) nanoparticles (NPs) like ZnO and ZnMgO emerging as superior choices due to their robust performance. Nevertheless, scalability challenges, such as particle agglomeration and positive aging, have prompted research into organic semiconductors that match the performance of MO NPs. This review aims to provide a detailed examination and comprehensive understanding of recent advances and challenges in ETLs based on both MO NPs and organic semiconductors, guiding future commercialization efforts for QLEDs.

Spatial Control of Nickel Vacancies in Colloidal NiMgO Nanocrystals for Efficient and Stable All-inorganic Quantum Dot Light-Emitting Diodes

Colloidal quantum dot (QD)-based light-emitting diodes (QD-LEDs) have reached the pinnacle of quantum efficiency and are now being actively developed for next-generation displays and brighter light sources. Previous research has suggested utilizing inorganic hole-transport layers (HTLs) to explore brighter and more stable QD-LEDs. However, the performance metrics of such QD-LEDs with inorganic HTLs generally lag behind those of organic-inorganic hybrid QD-LEDs employing organic HTLs. In this study, colloidal NiMgO nanocrystals (NCs) with spatially controlled Mg are introduced as HTLs for realizing efficient and stable all-inorganic QD-LEDs. During the co-condensation of Ni and Mg precursors to produce valence band-lowered NiMgO NCs, incorporating ≈2% Mg into the NiO lattice creates additional Ni vacancies (VNi) within and on the NCs, influencing the hole concentration and mobility of the NiMgO NC films. Passivating the VNi exposed on the surface with magnesium hydroxide allows for tuning the electrical properties of the NiMgO NCs relative to those of an electron transport layer, allowing for a balanced charge supply and suppressed negative charging of the QDs. Optimized all-inorganic QD-LEDs employing NiMgO NCs achieved a peak external quantum efficiency of 16.4%, peak luminance of 269 455 cd m⁻2, and a half-life of 462 690 h at 100 nit.

PEDOT:PSS-Free Quantum-Dot Light-Emitting Diode with Enhanced Efficiency and Stability

Although high-performance quantum-dot light-emitting diodes (QLEDs) have been achieved, their stability is still limited due to the use of unstable PEDOT:PSS as the hole injection layer (HIL). Here, we developed a PEDOT:PSS-free QLED by using a binary PTAA:F4-TCNQ HIL. Because the PTAA, with a highest occupied molecular orbital (HOMO) level of ∼5.20 eV, can facilitate hole injection from ITO to the hole transport layer, and the F4-TCNQ can act as the electron acceptor dopant to improve the hole density and hole mobility of PTAA, the PTAA:F4-TCNQ HIL can exhibit excellent hole injection capability. As a result, the PEDOT:PSS-free QLED can exhibit a high EQE of 24.19% and an impressive brightness of 367,200 cd/m2, which are significantly higher than those of conventional QLEDs. Moreover, due to the improvement of device performance and the removal of PEDOT:PSS, the PEDOT:PSS-free QLED can also exhibit a high T95 operational lifetime of 4206 h at 1000 cd/m2 and an excellent T80 shelf lifetime of 207.41 h at 136400 cd/m2, which are about 1.6- and 3.3-fold those of conventional QLEDs, respectively. We believe that the demonstrated PEDOT:PSS-free QLED, with higher performance and stability, will promote the practical application of QLEDs in displays.

Inverted All-Inorganic Nanorod-Based Light-Emitting Diodes via Electrophoretic Deposition

High performance and high stability in all-inorganic solution processed nanocrystal-based light-emitting diodes (LEDs) are highly attractive for large area devices compared to organic material-based LEDs. In this work, an inverted all-inorganic LED structure is designed to have an easy integration with thin-film transistors. Adopting robust inorganic materials such as Ni1-x O nanoparticle films as a hole transport layer (HTL) is beneficial for the performance of LED. Herein, we have optimized the HTL by introducing Mg into Ni1-x O to bridge the difference in energy offset between the nanorod emissive layer and the HTL, in addition to the advantages of low temperature solubility of Ni1-x O:Mg nanoparticles. Furthermore, CdSe/CdS-based nanorods via electrophoretic deposition (EPD) are amassed in a vertically aligned (VA-NR) fashion as an emissive layer to facilitate the carrier transportation. Fostering these approaches enabled an EQE of 1.2% of the fabricated device, establishing the viability for further development of efficient and highly stable nanocrystal-based LEDs.

Improvement of the Stability of Quantum-Dot Light Emitting Diodes Using Inorganic HfOx Hole Transport Layer

One of the major challenges in QLED research is improving the stability of the devices. In this study, we fabricated all inorganic quantum-dot light emitting diodes (QLEDs) using hafnium oxide (HfOx) as the hole transport layer (HTL), a material commonly used for insulator. Oxygen vacancies in HfOx create defect states below the Fermi level, providing a pathway for hole injection. The concentration of these oxygen vacancies can be controlled by the annealing temperature. We optimized the all-inorganic QLEDs with HfOx as the HTL by changing the annealing temperature. The optimized QLEDs with HfOx as the HTL showed a maximum luminance and current efficiency of 66,258 cd/m2 and 9.7 cd/A, respectively. The fabricated all-inorganic QLEDs exhibited remarkable stability, particularly when compared to devices using organic materials for the HTL. Under extended storage in ambient conditions, the all-inorganic device demonstrated a significantly enhanced operating lifetime (T50) of 5.5 h, which is 11 times longer than that of QLEDs using an organic HTL. These results indicate that the all-inorganic QLEDs structure, with ITO/MoO3/HfOx/QDs/ZnMgO/Al, exhibits superior stability compared to organic-inorganic hybrid QLEDs.

Nickel Oxide Hole Injection Layers for Balanced Charge Injection in Quantum Dot Light-Emitting Diodes

Quantum dot (QD) light-emitting diodes (QLEDs) are promising for next-generation displays, but suffer from carrier imbalance arising from lower hole injection compared to electron injection. A defect engineering strategy is reported to tackle transport limitations in nickel oxide-based inorganic hole-injection layers (HILs) and find that hole injection is able to enhance in high-performance InP QLEDs using the newly designed material. Through optoelectronic simulations, how the electronic properties of NiOx affect hole injection efficiency into an InP QD layer, finding that efficient hole injection depends on lowering the hole injection barrier and enhancing the acceptor density of NiOx is explored. Li doping and oxygen enriching are identified as effective strategies to control intrinsic and extrinsic defects in NiOx, thereby increasing acceptor density, as evidenced by density functional theory calculations and experimental validation. With fine-tuned inorganic HIL, InP QLEDs exhibit a luminance of 45 200 cd m-2 and an external quantum efficiency of 19.9%, surpassing previous inorganic HIL-based QLEDs. This study provides a path to designing inorganic materials for more efficient and sustainable lighting and display technologies.

Real-Time Ultraviolet Monitoring System with Low-Temperature Solution-Processed High-Transparent p-n Junction Photodiode with a Fast Responsive and High Rectification Ratio

We introduce an enhanced performance organic-inorganic hybrid p-n junction photodiode, utilizing poly[bis(4-phenyl) (2,4,6-trimethylphenyl)amine] (PTAA) and ZnO, fabricated through a solution-based process at a low temperature under 100 °C. Improved interfacial electronic structure, characterized by shallower Gaussian standard deviation of the density-of-state distribution and a larger interface dipole, has resulted in a remarkable fold increase of ∼102 in signal-to-noise ratio for the device. This photodiode exhibits a high specific detectivity (2.32 × 1011 Jones, cm × Hz × W - 1 ) and exceptional rectification ratio (5.47 × 104 at ±1 V). The primary light response, concentrated in the optimal thickness of the PTAA layer, contributes to response over the entire UVA region and rapid response speed, with rise and fall times of 0.24 and 0.64 ms, respectively. Furthermore, this work demonstrates immense potential of our device for health monitoring applications by enabling real-time and continuous measurements of UV intensity.

Impact of Alternating-Current Operation on All-Inorganic Quantum Dot Light-Emitting Diodes

In colloidal quantum dot light-emitting diodes (QD-LEDs), replacing organic hole transport layers (HTLs) with their inorganic counterparts is expected to yield distinct advantages due to their inherent material robustness. However, despite the promising characteristics of all-inorganic QD-LEDs, some challenges persist in achieving stable operation; for example, the electron overflow toward the inorganic HTL and charge accumulation within working devices return a temporal inconsistency in device characteristics. To address these challenges, we propose an operational approach that employs an alternating-current (AC) in all-inorganic QD-LEDs. We carry out comprehensive studies on the optoelectrical characteristics of all-inorganic QD-LEDs under direct-current (DC) or AC operation and demonstrate that AC operation can facilitate efficient charge carrier recombination within the QD emissive layer, leading to improved device efficiency and temporally invariant optoelectronic characteristics. Leveraging the intrinsic material robustness of inorganic charge transport layers (CTLs), our current study suggests a promising pathway toward enhancing the performance and stability of QD-LEDs, particularly for futuristic display applications.

Flexible Substrate-Compatible and Efficiency-Improved Quantum-Dot Light-Emitting Diodes with Reduced Annealing Temperature of NiOx Hole-Injecting Layer

The growing demand for wearable and attachable displays has sparked significant interest in flexible quantum-dot light-emitting diodes (QLEDs). However, the challenges of fabricating and operating QLEDs on flexible substrates persist due to the lack of stable and low-temperature processable charge-injection/-transporting layers with aligned energy levels. In this study, we utilized NiOx nanoparticles that are compatible with flexible substrates as a hole-injection layer (HIL). To enhance the work function of the NiOx HIL, we introduced a self-assembled dipole modifier called 4-(trifluoromethyl)benzoic acid (4-CF3-BA) onto the surface of the NiOx nanoparticles. The incorporation of the dipole molecules through adsorption treatment has significantly changed the wettability and electronic characteristics of NiOx nanoparticles, resulting in the formation of NiO(OH) at the interface and a shift in vacuum level. The alteration of surface electronic states of the NiOx nanoparticles not only improves the carrier balance by reducing the hole injection barrier but also prevents exciton quenching by passivating defects in the film. Consequently, the NiOx-based red QLEDs with interfacial modification demonstrate a maximum current efficiency of 16.1 cd/A and a peak external quantum efficiency of 10.3%. This represents a nearly twofold efficiency enhancement compared to control devices. The mild fabrication requirements and low annealing temperatures suggest potential applications of dipole molecule-modified NiOx nanoparticles in flexible optoelectronic devices.

Boosting Cu─In─Zn─S-based Quantum-Dot Light-Emitting Diodes Enabled by Engineering Cu─NiOx/PEDOT:PSS Bilayered Hole-Injection Layer

The imbalance of charge injection is considered to be a major factor that limits the device performance of cadmium-free quantum-dot light-emitting diodes (QLEDs). In this work, high-performance cadmium-free Cu─In─Zn─S(CIZS)-based QLEDs are designed and fabricated through tailoring interfacial energy level alignment and improving the balance of charge injection. This is achieved by introducing a bilayered hole-injection layer (HIL) of Cu-doped NiOx (Cu─NiOx)/Poly(3,4-ethylenedioxythiophene): poly (styrene sulfonate) (PEDOT:PSS). High-quality Cu─NiOx film is prepared through a novel and straightforward sol-gel procedure. Multiple experimental characterizations and theoretical calculations show that the incorporation of Cu2+ ions can regulate the energy level structure of NiOx and enhance the hole mobility. The state-of-art CIZS-based QLEDs with Cu─NiOx/PEDOT:PSS bilayered HIL exhibit the maximum external quantum efficiency of 6.04% and half-life time of 48 min, which is 1.3 times and four times of the device with only PEDOT:PSS HIL. The work provides a new pathway for developing high-performance cadmium-free QLEDs.

Charge Carrier Regulation for Efficient Blue Quantum-Dot Light-Emitting Diodes Via a High-Mobility Coplanar Cyclopentane[b]thiopyran Derivative

The performance of blue quantum dot light-emitting diodes (QLEDs) is limited by unbalanced charge injection, resulting from insufficient holes caused by low mobility or significant energy barriers. Here, we introduce an angular-shaped heteroarene based on cyclopentane[b]thiopyran (C8-SS) to modify the hole transport layer poly-N-vinylcarbazole (PVK), in blue QLEDs. C8-SS exhibits high hole mobility and conductivity due to the π···π and S···π interactions. Introducing C8-SS to PVK significantly enhanced hole mobility, increasing it by 2 orders of magnitude from 2.44 × 10-6 to 1.73 × 10-4 cm2 V-1 s-1. Benefiting from high mobility and conductivity, PVK:C8-SS-based QLEDs exhibit a low turn-on voltage (Von) of 3.2 V. More importantly, the optimized QLEDs achieve a high peak power efficiency (PE) of 7.13 lm/W, which is 2.65 times that of the control QLEDs. The as-proposed interface engineering provides a novel and effective strategy for achieving high-performance blue QLEDs in low-energy consumption lighting applications.

Record high external quantum efficiency of 20% achieved in fully solution-processed quantum dot light-emitting diodes based on hole-conductive metal oxides

Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) has been widely used as a hole injection material in quantum dot (QD) light-emitting diodes (QLEDs). However, it degrades the organic materials and electrodes in QLEDs due to its strong hydroscopicity and acidity. Although hole-conductive metal oxides have a great potential to solve this disadvantage, it is still a challenge to achieve efficient and stable QLEDs by using these solution-processed metal oxides. Herein, the state-of-the-art QLEDs fabricated by using hole-conductive MoOx QDs are achieved. The α-phase MoOx QDs exhibit a monodispersed size distribution with clear and regular crystal lattices, corresponding to high-quality nanocrystals. Meanwhile, the MoOx film owns an excellent transmittance, suitable valence band, good morphology and impressive hole-conductivity, demonstrating that the MoOx film could be used as a hole injection layer in QLEDs. Moreover, the rigid and flexible red QLEDs made by MoOx exhibit peak external quantum efficiencies of over 20%, representing a new record for the hole-conductive metal oxide based QLEDs. Most importantly, the MoOx QDs afford their QLEDs with a longer T95 lifetime than these devices made by PEDOT:PSS. As a result, we believe that the MoOx QDs could be used as efficient and stable hole injection materials used in QLEDs.

Reducing Emission Linewidth of Pure-Blue ZnSeTe Quantum Dots through Shell Engineering toward High Color Purity Light-Emitting Diodes

High color purity blue quantum dot light-emitting diodes (QLEDs) have great potential applications in the field of ultra-high-definition display. However, the realization of eco-friendly pure-blue QLEDs with a narrow emission linewidth for high color purity remains a significant challenge. Herein, a strategy for fabricating high color purity and efficient pure-blue QLEDs based on ZnSeTe/ZnSe/ZnS quantum dots (QDs) is presented. It is found that by finely controlling the internal ZnSe shell thickness of the QDs, the emission linewidth can be narrowed by reducing the exciton-longitudinal optical phonon coupling and trap states in the QDs. Additionally, the regulation of the QD shell thickness can suppress the Förster energy transfer between QDs in the QLED emission layer, which will help to reduce the emission linewidth of the device. As a result, the fabricated pure-blue (452 nm) ZnSeTe QLED with ultra-narrow electroluminescence linewidth (22 nm) exhibit high color purity with the Commission Internationale de l'Eclairage chromatic coordinates of (0.148, 0.042) and considerable external quantum efficiency (18%). This work provides a demonstration of the preparation of pure-blue eco-friendly QLEDs with both high color purity and efficiency, and it is believed that it will accelerate the application process of eco-friendly QLEDs in ultra-high-definition displays.

Progress in the Synthesis and Application of Transparent Conducting Film of AZO (ZnO:Al)

Due to the excellent performance and low cost of the new aluminum-doped zinc oxide (AZO) film, it is expected to replace the mature indium-doped tin oxide (ITO) film. The research status and progress of AZO transparent conductive films are summarized in this review. Moreover, the structure, optoelectronic properties, and conductive mechanism of AZO thin films are also detailed. The thin films' main preparation processes and the advantages and disadvantages of each process method are mainly discussed, and their application fields are expounded. AZO thin films with multicomponent composite structures are one of the promising development directions in transparent conductive oxide (TCO) thin films. The development of various preparation processes has promoted the production and application of thin films on a broad scale. Finally, some improvement schemes have been proposed to improve the comprehensive performance of the film. The industrialization prospects of the AZO film, as well as its great development potential in the digital world, are discussed.

Improving the performance of quantum dot light-emitting diodes by tailoring QD emitters

As the emitters of quantum dots (QDs) light-emitting diodes (QLEDs), QDs, which are responsible for the charge injection, charge transportation, and especially exciton recombination, play a significant role in QLEDs. With the crucial advances made in QDs, such as the advancement of synthetic methods and the understanding of luminescence mechanisms, QLEDs also demonstrate a dramatic improvement. Until now, efficiencies of 30.9%, 28.7% and 21.9% have been achieved in red, green and blue devices, respectively. However, in QLEDs, some issues are still to be solved, such as the imbalance of charge injection and exciton quenching processes (defect-assisted recombination, Auger recombination, energy transfer and exciton dissociation under a high electric field). In this review, we will provide an overview of recent advances in the study and understanding of the working mechanism of QLEDs and the exciton quenching mechanism of QDs in devices. Particular emphasis is placed on improving charge injection and suppressing exciton quenching. An in-depth understanding of this progress may help develop guidelines to direct QLED development.

Review: Quantum Dot Light-Emitting Diodes

Quantum dot light-emitting diodes (QD-LEDs) are one of the most promising self-emissive displays in terms of light-emitting efficiency, wavelength tunability, and cost. Future applications using QD-LEDs can cover a range from a wide color gamut and large panel displays to augmented/virtual reality displays, wearable/flexible displays, automotive displays, and transparent displays, which demand extreme performance in terms of contrast ratio, viewing angle, response time, and power consumption. The efficiency and lifetime have been improved by tailoring the QD structures and optimizing the charge balance in charge transport layers, resulting in theoretical efficiency for unit devices. Currently, longevity and inkjet-printing fabrication of QD-LEDs are being tested for future commercialization. In this Review, we summarize significant progress in the development of QD-LEDs and describe their potential compared to other displays. Furthermore, the critical elements to determine the performance of QD-LEDs, such as emitters, hole/electron transport layers, and device structures, are discussed comprehensively, and the degradation mechanisms of the devices and the issues of the inkjet-printing process were also investigated.

Fabrication of ZnO dual electron transport layer via atomic layer deposition for highly stable and efficient CsPbBr3perovskite nanocrystals light-emitting diodes

Electron transport layers (ETLs) are important components of high-performance all-inorganic perovskite nanocrystals light-emitting diodes (PNCs-LED). Herein, atomic layer deposition (ALD) of inorganic ZnO layer is combined to the organic 1,3,5-Tris(1-phenyl-1H-benzimidazol-2-yl)benzene (TPBi) to form dual ETLs to enhance both the efficiency and stability of PNCs-LED simultaneously. Optimization of ZnO thickness suggested that 10 cycles ALD yields the best performance of the devices. The external quantum efficiency of the device reaches to 7.21% with a low turn-on voltage (2.4 V). Impressively, the dual ETL PNCs-LED realizes maximumT₅₀lifetime of 761 h at the initial luminance of 100 nit, which is one of the top lifetimes among PNCs-LEDs up to now. The improved performance of dual ETL PNCs-LED is mainly due to the improved charge transport balance with favorable energy level matching. These findings present a promising strategy to modify the function layer via ALD to achieve both highly efficient and stable PNCs-LED.

Multi-bandgap colloidal quantum dot mixing for optoelectronic devices

This article discusses the current status and future prospects of multi-bandgap colloidal quantum dot-based optoelectronic devices.

Steering Interface Dipoles for Bright and Efficient All-Inorganic Quantum Dot Based Light-Emitting Diodes

The state-of-the-art quantum dot (QD) based light-emitting diodes (QD-LEDs) reach near-unity internal quantum efficiency thanks to organic materials used for efficient hole transportation within the devices. However, toward high-current-density LEDs, such as augmented reality, virtual reality, and head-up display, thermal vulnerability of organic components often results in device instability or breakdown. The adoption of a thermally robust inorganic hole transport layer (HTL), such as NiO, becomes a promising alternative, but the large energy offset between the NiO HTL and the QD emissive layer impedes the efficient operation of QD-LEDs. Here, we demonstrate bright and stable all-inorganic QD-LEDs by steering the orientation of molecular dipoles at the surfaces of both the NiO HTL and QDs. We show that the molecular dipoles not only induce the vacuum level shift that helps alleviate the energy offset between the NiO HTL and QDs but also passivate the surface trap states of the NiO HTL that act as nonradiative recombination centers. With the facilitated hole injection into QDs and suppressed electron leakage toward trap sites in the NiO HTL, we achieve all-inorganic QD-LEDs with high external quantum efficiency (6.5% at peak) and brightness (peak luminance exceeding 77 000 cd/m²) along with prolonged operational stability. The approaches and results in the present study provide the design principles for high-performance all-inorganic QD-LEDs suited for next-generation light sources.

Effect of Air Exposure of ZnMgO Nanoparticle Electron Transport Layer on Efficiency of Quantum-Dot Light-Emitting Diodes

We demonstrate the effect of air exposure on optical and electrical properties of ZnMgO nanoparticles (NPs) typically exploited as an electron transport layer in Cd-based quantum-dot light-emitting diodes (QLEDs). We analyze the roles of air components in modifying the electrical properties of ZnMgO NPs, which reveals that H2O enables the reduction of hole leakage while O2 alters the character of charge transport due to its ability to trap electrons. As a result, the charge balance in the QDs layer is improved, which is confirmed by voltage-dependent measurements of photoluminescence quantum yield. The maximum external quantum efficiency is improved over 2-fold and reaches the value of 9.5% at a luminance of 104 cd/m2. In addition, we investigate the problem of electron leakage into the hole transport layer and show that trap-mediated electron transport in the ZnMgO layer caused by adsorbed O2 ensures a higher leakage threshold. This work also provides an insight into the possible disadvantages of device contact with air as well as problems and challenges that might occur during open-air fabrication of QLEDs.