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Cheng Z, Wang Y, Zheng R, Mu W. The prediction of two-dimensional PbN: opened bandgap in heterostructure with CdO. Front Chem 2024; 12:1382850. [PMID: 38698935 PMCID: PMC11063369 DOI: 10.3389/fchem.2024.1382850] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/06/2024] [Accepted: 03/27/2024] [Indexed: 05/05/2024] Open
Abstract
The development of two-dimensional (2D) materials has received wide attention as a generation of optoelectronics, thermoelectric, and other applications. In this study, a novel 2D material, PbN, is proposed as an elemental method using the prototype of a recent reported nitride (J. Phys. Chem. C 2023, 127, 43, 21,006-21014). Based on first-principle calculations, the PbN monolayer is investigated as stable at 900 K, and the isotropic mechanical behavior is addressed by the Young's modulus and Poisson's ratio at 67.4 N m-1 and 0.15, respectively. The PbN monolayer also presents excellent catalytic performance with Gibbs free energy of 0.41 eV. Zero bandgap is found for the PbN monolayer, and it can be opened at about 0.128 eV by forming a heterostructure with CdO. Furthermore, the PbN/CdO is constructed by Van der Waals interaction, while the apparent potential drop and charge transfer are investigated at the interface. The PbN/CdO heterostructure also possesses excellent light absorption properties. The results provide theoretical guidance for the design of layered functional materials.
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Affiliation(s)
- Zhang Cheng
- Department of Automotive and Mechanical Engineering, Anhui Communications Vocational & Technical College, Hefei, China
| | - Yuelei Wang
- Faculty of Mechanical and Electrical Engineering, Hainan Vocational University of Science and Technology, Haikou, China
| | - Ruxin Zheng
- School of Mechanical Engineering, Southeast University, Nanjing, China
| | - Weihua Mu
- Wenzhou Institute, University of Chinese Academy of Sciences, Wenzhou, China
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2
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Zhang S, Huo S, Song X, Zhang X. Surface Stability and Exfoliability of Non-van der Waals Magnetic Chromium Tellurides. J Phys Chem Lett 2023; 14:10609-10616. [PMID: 37982382 DOI: 10.1021/acs.jpclett.3c02439] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2023]
Abstract
Exfoliation of two-dimensional (2D) magnetic materials from non-van der Waals (non-vdW) materials has attracted increasing attention because it provides a great platform for the construction of 2D magnetic materials. For non-vdW magnetic chromium tellurides with high Curie temperatures, their few-layer samples show promising applications in the field of spintronics. However, there is still no consensus on whether the surface structures of few-layer chromium tellurides should be terminated by Cr or Te atoms. By calculating the surface and exfoliation energy, we find that which structure is more stable depends greatly on the value of the chemical potential of Te atoms, and the few-layer sample with a Cr-terminated surface is easier to exfoliate than that with both Te-terminated surfaces. Finally, we propose that different exfoliated structures can be identified by using the atomic number ratio of Cr to Te and the average magnetic moment of Cr atoms in few-layer samples.
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Affiliation(s)
- Shuqing Zhang
- Institute of Information Photonics Technology, Faculty of Science, Beijing University of Technology, Beijing 100124, China
| | - Sitong Huo
- Institute of Information Photonics Technology, Faculty of Science, Beijing University of Technology, Beijing 100124, China
| | - Xiaoyan Song
- Faculty of Materials and Manufacturing, Key Laboratory of Advanced Functional Materials, Education Ministry of China, Beijing University of Technology, Beijing 100124, China
| | - Xinping Zhang
- Institute of Information Photonics Technology, Faculty of Science, Beijing University of Technology, Beijing 100124, China
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3
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Qi Y, Sadi MA, Hu D, Zheng M, Wu Z, Jiang Y, Chen YP. Recent Progress in Strain Engineering on Van der Waals 2D Materials: Tunable Electrical, Electrochemical, Magnetic, and Optical Properties. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2205714. [PMID: 35950446 DOI: 10.1002/adma.202205714] [Citation(s) in RCA: 24] [Impact Index Per Article: 24.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/22/2022] [Revised: 08/01/2022] [Indexed: 06/15/2023]
Abstract
Strain engineering is a promising way to tune the electrical, electrochemical, magnetic, and optical properties of 2D materials, with the potential to achieve high-performance 2D-material-based devices ultimately. This review discusses the experimental and theoretical results from recent advances in the strain engineering of 2D materials. Some novel methods to induce strain are summarized and then the tunable electrical and optical/optoelectronic properties of 2D materials via strain engineering are highlighted, including particularly the previously less-discussed strain tuning of superconducting, magnetic, and electrochemical properties. Also, future perspectives of strain engineering are given for its potential applications in functional devices. The state of the survey presents the ever-increasing advantages and popularity of strain engineering for tuning properties of 2D materials. Suggestions and insights for further research and applications in optical, electronic, and spintronic devices are provided.
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Affiliation(s)
- Yaping Qi
- Department of Engineering Science, Faculty of Innovation Engineering, Macau University of Science and Technology, Av. Wai Long, Macao SAR, China
| | - Mohammad A Sadi
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, USA
| | - Dan Hu
- Department of Engineering Science, Faculty of Innovation Engineering, Macau University of Science and Technology, Av. Wai Long, Macao SAR, China
| | - Ming Zheng
- School of Materials Science and Physics, China University of Mining and Technology, Xuzhou, 221116, China
| | - Zhenping Wu
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing, 100876, China
| | - Yucheng Jiang
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu, 215009, P. R. China
| | - Yong P Chen
- Department of Engineering Science, Faculty of Innovation Engineering, Macau University of Science and Technology, Av. Wai Long, Macao SAR, China
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, USA
- Department of Physics and Astronomy and Birck Nanotechnology Center and Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, IN, 47907, USA
- Institute of Physics and Astronomy and Villum Center for Hybrid Quantum Materials and Devices, Aarhus University, Aarhus-C, 8000, Denmark
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4
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Hovančík D, Pospíšil J, Carva K, Sechovský V, Piamonteze C. Large Orbital Magnetic Moment in VI 3. NANO LETTERS 2023; 23:1175-1180. [PMID: 36722374 PMCID: PMC9951247 DOI: 10.1021/acs.nanolett.2c04045] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/14/2022] [Revised: 01/10/2023] [Indexed: 06/18/2023]
Abstract
The existence of the V3+-ion orbital moment is an open issue of the nature of magnetism in the van der Waals ferromagnet VI3. The huge magnetocrystalline anisotropy in conjunction with the significantly reduced ordered magnetic moment compared to the spin-only value provides strong but indirect evidence of a large V orbital moment. We used the unique capability of X-ray magnetic circular dichroism to determine the orbital component of the total magnetic moment and provide a direct proof of an exceptionally sizable orbital moment of the V3+ ion in VI3. Our ligand field multiplet simulations of the XMCD spectra in synergy with the results of DFT calculations agree with the existence of two V sites with different orbital occupations and OM magnitudes in the ground state.
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Affiliation(s)
- Dávid Hovančík
- Department
of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, 121
16Prague 2, Czech Republic
| | - Jiří Pospíšil
- Department
of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, 121
16Prague 2, Czech Republic
| | - Karel Carva
- Department
of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, 121
16Prague 2, Czech Republic
| | - Vladimír Sechovský
- Department
of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, 121
16Prague 2, Czech Republic
| | - Cinthia Piamonteze
- Swiss
Light Source, Paul Scherrer Institut, CH-5232Villigen PSI, Switzerland
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5
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Jenkins S, Rózsa L, Atxitia U, Evans RFL, Novoselov KS, Santos EJG. Breaking through the Mermin-Wagner limit in 2D van der Waals magnets. Nat Commun 2022; 13:6917. [PMCID: PMC9663506 DOI: 10.1038/s41467-022-34389-0] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/21/2022] [Accepted: 10/24/2022] [Indexed: 11/16/2022] Open
Abstract
AbstractThe Mermin-Wagner theorem states that long-range magnetic order does not exist in one- (1D) or two-dimensional (2D) isotropic magnets with short-ranged interactions. Here we show that in finite-size 2D van der Waals magnets typically found in lab setups (within millimetres), short-range interactions can be large enough to allow the stabilisation of magnetic order at finite temperatures without any magnetic anisotropy. We demonstrate that magnetic ordering can be created in 2D flakes independent of the lattice symmetry due to the intrinsic nature of the spin exchange interactions and finite-size effects. Surprisingly we find that the crossover temperature, where the intrinsic magnetisation changes from superparamagnetic to a completely disordered paramagnetic regime, is weakly dependent on the system length, requiring giant sizes (e.g., of the order of the observable universe ~ 1026 m) to observe the vanishing of the magnetic order as expected from the Mermin-Wagner theorem. Our findings indicate exchange interactions as the main ingredient for 2D magnetism.
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6
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Wang J, Wang D. Two-dimensional spin-gapless semiconductors: A mini-review. Front Chem 2022; 10:996344. [PMID: 36092680 PMCID: PMC9452911 DOI: 10.3389/fchem.2022.996344] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/17/2022] [Accepted: 07/26/2022] [Indexed: 11/13/2022] Open
Abstract
In the past decade, two-dimensional (2D) materials and spintronic materials have been rapidly developing in recent years. 2D spin-gapless semiconductors (SGSs) are a novel class of ferromagnetic 2D spintronic materials with possible high Curie temperature, 100% spin-polarization, possible one-dimensional or zero-dimensional topological signatures, and other exciting spin transport properties. In this mini-review, we summarize a series of ideal 2D SGSs in the last 3 years, including 2D oxalate-based metal-organic frameworks, 2D single-layer Fe2I2, 2D Cr2X3 (X = S, Se, and Te) monolayer with the honeycomb kagome (HK) lattice, 2D CrGa2Se4 monolayer, 2D HK Mn-cyanogen lattice, 2D MnNF monolayer, and 2D Fe4N2 pentagon crystal. The mini-review also discusses the unique magnetic, electronic, topological, and spin-transport properties and the possible application of these 2D SGSs. The mini-review can be regarded as an improved understanding of the current state of 2D SGSs in recent 3 years.
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Affiliation(s)
| | - Dandan Wang
- School of Physical Science and Technology, Southwest University, Chongqing, China
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7
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Gan Y, Miao N, Lan P, Zhou J, Elliott SR, Sun Z. Robust Design of High-Performance Optoelectronic Chalcogenide Crystals from High-Throughput Computation. J Am Chem Soc 2022; 144:5878-5886. [PMID: 35238543 DOI: 10.1021/jacs.1c12620] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
High-performance functional materials are the cornerstones of the continuous advance of modern science and technology, but the development of new materials is still challenging. Here, we propose a robust design strategy for novel crystalline solids based on group-theory classification and high-throughput computation, as demonstrated by the successful identification of new optoelectronic semiconductors. First, by means of theoretical group analysis and composition engineering, we obtained 78 prototypical crystal structures and built a computational materials database containing 21,060 ternary chalcogenide compounds. Our high-throughput screening of the coordination characteristics, phase stability, and electronic structures provided 97 candidate semiconductors, including 93 completely new compounds. Among them, 22 crystals with excellent dynamical and thermal stability are predicted to show high photovoltaic conversion efficiency (>30%), comparable to the currently most efficient single-junction GaAs solar cell, owing to their optimal electronic properties and outstanding optical absorption. This discovery of new chalcogenide crystals offers excellent candidates for optoelectronic applications and suggests that our design strategy is a promising way to search for unknown high-performance functional materials.
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Affiliation(s)
- Yu Gan
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Naihua Miao
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China.,Center for Integrated Computational Materials Engineering, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191, China
| | - Penghua Lan
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Jian Zhou
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Stephen R Elliott
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China.,Center for Integrated Computational Materials Engineering, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191, China.,Department of Chemistry, University of Cambridge, Cambridge CB2 1EW, U.K.,Physical and Theoretical Chemistry Laboratory, University of Oxford, Oxford OX1 3QZ, U.K
| | - Zhimei Sun
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China.,Center for Integrated Computational Materials Engineering, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191, China
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8
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Yu C, Li X, Li X, Yang J. High Curie Temperature and Intrinsic Ferromagnetic Half-Metallicity in Mn 2X 3 (X = S, Se, Te) Nanosheets. J Phys Chem Lett 2021; 12:11790-11794. [PMID: 34860522 DOI: 10.1021/acs.jpclett.1c03444] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) intrinsic half-metallic materials with room-temperature ferromagnetism, sizable magnetic anisotropy energy (MAE), and wide half-metallic gap are excellent candidates for pure spin generation, injection, and transport in nanospintronic applications. However, until now, such 2D half metallicity has been rarely observed in experiment. In this work, by using first-principles calculations, we design a series of such materials, namely, Mn2X3 (X = S, Se, Te) nanosheets, which could be obtained by controlling the thickness of synthesized α-MnX(111) nanofilm to a quintuple X-Mn-X-Mn-X layer. All these nanosheets are dynamically and thermally stable. Electronic and magnetic studies reveal they are intrinsic half metals with high Curie temperatures between 718 and 820 K, sizable MAEs with -1.843 meV/Mn for Mn2Te3 nanosheet, and wide half-metallic gaps from 1.55 to 1.94 eV. Above all, the outstanding features of Mn2X3 nanosheets make them promising in fabricating nanospintronic devices working at room temperature.
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Affiliation(s)
- Cuiju Yu
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Department of Chemical Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Xiangyang Li
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Department of Chemical Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Xingxing Li
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Department of Chemical Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Jinlong Yang
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
- Department of Chemical Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
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9
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Rahman S, Torres JF, Khan AR, Lu Y. Recent Developments in van der Waals Antiferromagnetic 2D Materials: Synthesis, Characterization, and Device Implementation. ACS NANO 2021; 15:17175-17213. [PMID: 34779616 DOI: 10.1021/acsnano.1c06864] [Citation(s) in RCA: 24] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Magnetism in two dimensions is one of the most intriguing and alluring phenomena in condensed matter physics. Atomically thin 2D materials have emerged as a promising platform for exploring magnetic properties, leading to the development of essential technologies such as supercomputing and data storage. Arising from spin and charge dynamics in elementary particles, magnetism has also unraveled promising advances in spintronic devices and spin-dependent optoelectronics and photonics. Recently, antiferromagnetism in 2D materials has received extensive attention, leading to significant advances in their understanding and emerging applications; such materials have zero net magnetic moment yet are internally magnetic. Several theoretical and experimental approaches have been proposed to probe, characterize, and modulate the magnetic states efficiently in such systems. This Review presents the latest developments and current status for tuning the magnetic properties in distinct 2D van der Waals antiferromagnets. Various state-of-the-art optical techniques deployed to investigate magnetic textures and dynamics are discussed. Furthermore, device concepts based on antiferromagnetic spintronics are scrutinized. We conclude with remarks on related challenges and technological outlook in this rapidly expanding field.
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Affiliation(s)
- Sharidya Rahman
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, ACT 2601, Australia
| | - Juan F Torres
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, ACT 2601, Australia
| | - Ahmed Raza Khan
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, ACT 2601, Australia
| | - Yuerui Lu
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, ACT 2601, Australia
- ARC Centre for Quantum Computation and Communication Technology, Department of Quantum Science, Research School of Physics and Engineering, The Australian National University, Acton, ACT 2601, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), ANU node, Canberra, ACT 2601, Australia
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