Two-Dimensional Transition Metal Dichalcogenides and Their Charge Carrier Mobilities in Field-Effect Transistors

In Situ Studies on the Influence of Surface Symmetry on the Growth of MoSe2 Monolayer on Sapphire Using Reflectance Anisotropy Spectroscopy and Differential Reflectance Spectroscopy

The surface symmetry of the substrate plays an important role in the epitaxial high-quality growth of 2D materials; however, in-depth and in situ studies on these materials during growth are still limited due to the lack of effective in situ monitoring approaches. In this work, taking the growth of MoSe2 as an example, the distinct growth processes on Al2O3 (112¯0) and Al2O3 (0001) are revealed by parallel monitoring using in situ reflectance anisotropy spectroscopy (RAS) and differential reflectance spectroscopy (DRS), respectively, highlighting the dominant role of the surface symmetry. In our previous study, we found that the RAS signal of MoSe2 grown on Al2O3 (112¯0) initially increased and decreased ultimately to the magnitude of bare Al2O3 (112¯0) when the first layer of MoSe2 was fully merged, which is herein verified by the complementary DRS measurement that is directly related to the film coverage. Consequently, the changing rate of reflectance anisotropy (RA) intensity at 2.5 eV is well matched with the dynamic changes in differential reflectance (DR) intensity. Moreover, the surface-dominated uniform orientation of MoSe2 islands at various stages determined by RAS was further investigated by low-energy electron diffraction (LEED) and atomic force microscopy (AFM). By contrast, the RAS signal of MoSe2 grown on Al2O3 (0001) remains at zero during the whole growth, implying that the discontinuous MoSe2 islands have no preferential orientations. This work demonstrates that the combination of in situ RAS and DRS can provide valuable insights into the growth of unidirectional aligned islands and help optimize the fabrication process for single-crystal transition metal dichalcogenide (TMDC) monolayers.

X-ray Characterizations of Exfoliated MoS2 Produced by Microwave-Assisted Liquid-Phase Exfoliation

An X-ray analysis of exfoliated MoS2, produced by means of microwave-assisted liquid-phase exfoliation (LPE) from bulk powder in 1-methyl-2-pyrrolidone (NMP) or acetonitrile (ACN) + 1-methyl-2-pyrrolidone (NMP) solvents, has revealed distinct structural differences between the bulk powder and the microwave-exfoliated samples. Specifically, we performed X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) measurements to identify the elements of our exfoliated sample deposited on a Si substrate by drop-casting, as well as their chemical state and its structural crystalline phase. In the exfoliated sample, the peaks pattern only partially resemble the theoretical Miller indices for MoS2. In contrast, the bulk powder's spectrum shows the characteristic peaks of the 2H polytype of MoS2, but with some broadening. Notable is the retention of partial crystallinity in the post-exfoliation phases, specifically in the normal-to-plane orientation, thus demonstrating the effectiveness of microwave-assisted techniques in producing 2D MoS2 and attaining desirable properties for the material. XPS measurements confirm the success of the exfoliation procedure and that the exfoliated sample retains its original structure. The exfoliation process has been optimized to maintain the structural integrity of MoS2 while enhancing its surface area and electrochemical performance, thereby making it a promising material for advanced electronic and optoelectronic applications ranging from energy storage to sensing devices under ambient conditions.

A new In Situ Oxidized 2D Layered MnBi2Te4 Cathode for High-Performance Aqueous Zinc-Ion Battery

Recently, aqueous zinc ion batteries (AZIBs) with the superior theoretical capacity, high safety, low prices, and environmental protection, have emerged as a contender for advanced energy storage. However, challenges related to cathode materials, such as dissolution, instability, and structural collapse, have hindered the progress of AZIBs. Here, a novel AZIB is constructed using an oxidized 2D layered MnBi2Te4 cathode for the first time. The oxidized MnBi2Te4 cathode with large interlayer spacing and low energy barrier for zinc ion diffusion at 240 °C, exhibited impressive characteristics, including a high reversibility capacity of 393.1 mAh g-1 (0.4 A g-1), outstanding rate performance, and long cycle stability. Moreover, the corresponding aqueous button cell also exhibits excellent electrochemical performance. To demonstrate the application in practice in the realm of flexible wearable electronics, a quasi-solid-state micro ZIB (MZIB) is constructed and shows excellent flexibility and high-temperature stability (the capacity does not significantly degrade when the temperature reaches 100 °C and the bending angle exceeds 150°). This research offers effective tactics for creating high-performance cathode materials for AZIBs.

Polytelluride square planar chain-induced anharmonicity results in ultralow thermal conductivity and high thermoelectric efficiency in Al2Te5 monolayers

Two-dimensional (2D) metal chalcogenides provide rich ground for the development of nanoscale thermoelectrics, although achieving optimal thermoelectric efficiency is still a challenge. Here, we leverage the unique chemistry of tellurium (Te), renowned for its hypervalent bonding and catenation abilities, to tackle this challenge as manifested in Al2Te3 and Al2Te5 monolayers. While the former forms a straightforward covalent Al-Te network, the latter adopts a more intricate bonding mechanism, enabled by eccentric features of Te chemistry, to maintain charge balance. In Al2Te5, a square planar chain (SPC) known as polytelluride [Te3]2- is neutralized by the covalently bonded [Al2Te2]2+ framework. The hypervalent nature of Te results in bizarre Born effective charges of 7 and -4 for adjacent Te atoms within the square planar chain, a feature that induces significant anharmonicity in Al2Te5 monolayers. Enhanced anharmonic lattice vibrations and the accordion pattern bestow glass-like, strongly anisotropic thermal conductivity to the Al2Te5 monolayer. The calculated κL values of 1.8 and 0.5 W m-1 K-1 along the a- and b-axes at 600 K are one order of magnitude lower than those of Al2Te3, and even lower than monolayers that contain heavy cations like Bi2Te3. Moreover, the tellurium chain dominates the valence band maximum and conduction band minimum of Al2Te5, leading to a high valley degeneracy of 10, and thus a high power factor and figure of merit (zT). Using rigorous first-principles calculations of electron relaxation time, the estimated hole-doped and electron-doped zT of, respectively, 1.5 and 0.5 at 600 K is achieved for Al2Te5. The pioneering zT of Al2Te5 compared to that of Al2Te3 is rooted merely in its amorphous-like lattice thermal transport and its polytelluride chain. These findings underscore the importance of aluminum telluride and polymeric-based inorganic compounds as practical and cost-effective thermoelectric materials, pending further experimental validation.

Enhance Carrier Diffusion of Monolayer MoSe2 by Interface Engineering

Two-dimensional materials hold great potentials for beyond-CMOS (complementary metal-oxide-semiconductor) electronical and optoelectrical applications, and the development of field effect transistors (FET) with excellent performance using such materials is of particular interest. How to improve the performance of devices thus becomes an urgent issue. The performance of FETs depends greatly on the intrinsic electrical properties of the channel materials, meanwhile the device interface quality, such as extrinsic scattering of charged impurities, charge traps, and substrate surface roughness have a great influence on the performance. In this paper, the impact of the interface quality on the carrier diffusion behaviors of monolayer (ML) MoSe2 has been investigated by using an in situ ultrafast laser technique to avoid the surface contamination during device fabrication process. Two types of self-assembled monolayers (SAMs) are introduced to modify the gate dielectric surface through an interface engineering approach to obtain chemical-stable interfaces. The results showed that the transport properties of ML MoSe2 were enhanced after interface engineering, for example, the carrier mobility of ML MoSe2 was improved from ∼59.4 to ∼166.5 cm2 V-1 s-1 after the SAM modification. Meanwhile, the photocarrier dynamics of ML MoSe2 before and after interfacial engineering were also carefully studied. Our studies provide a feasible method for improving the carrier diffusion behaviors of such materials, and making them suited for application in future integrated circuit.

Ultrafast Charge Transfer Cascade in a Mixed-Dimensionality Nanoscale Trilayer

Innovation in optoelectronic semiconductor devices is driven by a fundamental understanding of how to move charges and/or excitons (electron-hole pairs) in specified directions for doing useful work, e.g., for making fuels or electricity. The diverse and tunable electronic and optical properties of two-dimensional (2D) transition metal dichalcogenides (TMDCs) and one-dimensional (1D) semiconducting single-walled carbon nanotubes (s-SWCNTs) make them good quantum confined model systems for fundamental studies of charge and exciton transfer across heterointerfaces. Here we demonstrate a mixed-dimensionality 2D/1D/2D MoS2/SWCNT/WSe2 heterotrilayer that enables ultrafast photoinduced exciton dissociation, followed by charge diffusion and slow recombination. Importantly, the heterotrilayer serves to double charge carrier yield relative to a MoS2/SWCNT heterobilayer and also demonstrates the ability of the separated charges to overcome interlayer exciton binding energies to diffuse from one TMDC/SWCNT interface to the other 2D/1D interface, resulting in Coulombically unbound charges. Interestingly, the heterotrilayer also appears to enable efficient hole transfer from SWCNTs to WSe2, which is not observed in the identically prepared WSe2/SWCNT heterobilayer, suggesting that increasing the complexity of nanoscale trilayers may modify dynamic pathways. Our work suggests "mixed-dimensionality" TMDC/SWCNT based heterotrilayers as both interesting model systems for mechanistic studies of carrier dynamics at nanoscale heterointerfaces and for potential applications in advanced optoelectronic systems.

Strong Room-Temperature Ferromagnetism of MoS2 Compound Produced by Defect Generation

Ferromagnetic materials have been attracting great interest in the last two decades due to their application in spintronics devices. One of the hot research areas in magnetism is currently the two-dimensional materials, transition metal dichalcogenides (TMDCs), which have unique physical properties. The origins and mechanisms of transition metal dichalcogenides (TMDCs), especially the correlation between magnetism and defects, have been studied recently. We investigate the changes in magnetic properties with a variation in annealing temperature for the nanoscale compound MoS2. The pristine MoS2 exhibits diamagnetic properties from low-to-room temperature. However, MoS2 compounds annealed at different temperatures showed that the controllable magnetism and the strongest ferromagnetic results were obtained for the 700 °C-annealed sample. These magnetizations are attributed to the unpaired electrons of vacancy defects that are induced by annealing, which are confirmed using Raman spectroscopy and electron paramagnetic resonance spectroscopy (EPR).

Miniature Ultrasonic Spatial Localization Module in the Lightweight Interactive

The advancement of spatial interaction technology has greatly enriched the domain of consumer electronics. Traditional solutions based on optical technologies suffers high power consumption and significant costs, making them less ideal in lightweight implementations. In contrast, ultrasonic solutions stand out due to their lower power consumption and cost-effectiveness, capturing widespread attention and interest. This paper addresses the challenges associated with the application of ultrasound sensors in spatial localization. Traditional ultrasound systems are hindered by blind spots, large physical dimensions, and constrained measurement ranges, limiting their practical applicability. To overcome these limitations, this paper proposes a miniature ultrasonic spatial localization module employing piezoelectric micromechanical ultrasonic transducers (PMUTs). The module is comprised of three devices each with dimension of 1.2 mm × 1.2 mm × 0.5 mm, operating at a frequency of around 180 kHz. This configuration facilitates a comprehensive distance detection range of 0-800 mm within 80° directivity, devoid of blind spot. The error rate and failure range of measurement as well as their relationship with the SNR (signal-to-noise ratio) are also thoroughly investigated. This work heralds a significant enhancement in hand spatial localization capabilities, propelling advancements in acoustic sensor applications of the meta-universe.

Increased Mobility and Reduced Hysteresis of MoS2 Field-Effect Transistors via Direct Surface Precipitation of CsPbBr3-Nanoclusters for Charge Transfer Doping

Transition-metal dichalcogenides (TMDs) and metal halide perovskites (MHPs) have been investigated for various applications, owing to their unique physical properties and excellent optoelectronic functionalities. TMD monolayers synthesized via chemical vapor deposition (CVD), which are advantageous for large-area synthesis, exhibit low mobility and prominent hysteresis in the electrical signals of field-effect transistors (FETs) because of their native defects. In this study, we demonstrate an increase in electrical mobility by ∼170 times and reduced hysteresis in the current-bias curves of MoS2 FETs hybridized with CsPbBr3 for charge transfer doping, which is implemented via solution-based CsPbBr3-nanocluster precipitation on CVD-grown MoS2 monolayer FETs. Electrons injected from CsPbBr3 into MoS2 induce heavy n-doping and heal point defects in the MoS2 channel layer, thus significantly increasing mobility and reducing hysteresis in the hybrid FETs. Our results provide a foundation for improving the reliability and performance of TMD-based FETs by hybridizing them with solution-based perovskites.

Strain Engineering for Enhancing Carrier Mobility in MoTe2 Field-Effect Transistors

Molybdenum ditelluride (MoTe2 ) exhibits immense potential in post-silicon electronics due to its bandgap comparable to silicon. Unlike other 2D materials, MoTe2 allows easy phase modulation and efficient carrier type control in electrical transport. However, its unstable nature and low-carrier mobility limit practical implementation in devices. Here, a deterministic method is proposed to improve the performance of MoTe2 devices by inducing local tensile strain through substrate engineering and encapsulation processes. The approach involves creating hole arrays in the substrate and using atomic layer deposition grown Al2 O3 as an additional back-gate dielectric layer on SiO2 . The MoTe2 channel is passivated with a thick layer of Al2 O3 post-fabrication. This structure significantly improves hole and electron mobilities in MoTe2 field-effect transistors (FETs), approaching theoretical limits. Hole mobility up to 130 cm-2  V-1 s-1 and electron mobility up to 160 cm-2  V-1 s-1 are achieved. Introducing local tensile strain through the hole array enhances electron mobility by up to 6 times compared to the unstrained devices. Remarkably, the devices exhibit metal-insulator transition in MoTe2 FETs, with a well-defined critical point. This study presents a novel technique to enhance carrier mobility in MoTe2 FETs, offering promising prospects for improving 2D material performance in electronic applications.

Nb2S2C Monolayers with Transition Metal Atoms Embedded at the S Vacancy Are Promising Single-Atom Catalysts for CO Oxidation

Single atoms anchored on stable and robust two-dimensional (2D) materials are attractive catalysts for carbon monoxide (CO) oxidation. Here, 3d (Fe-Zn), 4d (Ru-Cd), and 5d (Os-Hg) transition metal-decorated Nb2S2C monolayers were systematically studied as potential single-atom catalysts for low-temperature CO oxidation reactions by performing first-principles calculations. Sulfur vacancies are essential for stabilizing the transition metals anchored on the surface of defective Nb2S2C. After estimating the structure stability, the aggregation trend of the embedded metal atoms, and adsorption strength of reactants and products, Zn-decorated defective Nb2S2C is predicted to be a promising catalyst to facilitate CO oxidation through the Langmuir-Hinshelwood (LH) mechanism with an energy barrier of only 0.25 eV. Our investigation indicates that defective carbosulfides can be promising substrates to generate efficient and low-cost single-atom catalysts for low-temperature CO oxidation.

Fabrication of AIE Polymer-Functionalized Reduced Graphene Oxide for Information Storage

Reduced graphene oxide (RGO) has been extensively studied and applied in optoelectronic systems, but its unstable dispersion in organic solvents has limited its application. To overcome this problem, the newly designed and developed aggregation-induced emission (AIE) material poly[(9,9-bis(6-azidohexyl)-9H-fluorene)-alt-(9-(4-(1,2,2-triphenylvinyl)phenyl)-9H-carbazole)] (PAFTC) was covalently grafted onto RGO to produce (PFTC-g-RGO). The solubility of two-dimensional graphene was improved by incorporating it into the backbone of PAFTC to form new functional materials. In resistive random access memory (RRAM) devices, PFTC-g-RGO was used as the active layer material after it was characterized. The fabricated Al/PFTC-g-RGO/ITO device exhibited nonvolatile bistable resistive switching performances with a long retention time of over 104 s, excellent endurance of over 200 switching cycles, and an impressively low turn-ON voltage. This study provides important insights into the future development of AIE polymer-functionalized nanomaterials for information storage.

Non-volatile resistive switching mechanism in single-layer MoS2 memristors: insights from ab initio modelling of Au and MoS2 interfaces

Non-volatile memristive devices based on two-dimensional (2D) layered materials provide an attractive alternative to conventional flash memory chips. Single-layer semiconductors, such as monolayer molybdenum disulphide (ML-MoS2), enable the aggressive downscaling of devices towards greater system integration density. The "atomristor", the most compact device to date, has been shown to undergo a resistive switching between its high-resistance (HRS) and low-resistance (LRS) states of several orders of magnitude. The main hypothesis behind its working mechanism relies on the migration of sulphur vacancies in the proximity of the metal contact during device operation, thus inducing the variation of the Schottky barrier at the metal-semiconductor interface. However, the interface physics is not yet fully understood: other hypotheses were proposed, involving the migration of metal atoms from the electrode. In this work, we aim to elucidate the mechanism of the resistive switching in the atomristor. We carry out density functional theory (DFT) simulations on model Au and ML-MoS2 interfaces with and without the presence of point defects, either vacancies or substitutions. To construct realistic interfaces, we combine DFT with Green's function surface simulations. Our findings reveal that it is not the mere presence of S vacancies but rather the migration of Au atoms from the electrode to MoS2 that modulate the interface barrier. Indeed, Au atoms act as conductive "bridges", thus facilitating the flow of charge between the two materials.

Escalating Catalytic Activity for Hydrogen Evolution Reaction on MoSe2@Graphene Functionalization

Developing highly efficient and durable hydrogen evolution reaction (HER) electrocatalysts is crucial for addressing the energy and environmental challenges. Among the 2D-layered chalcogenides, MoSe₂ possesses superior features for HER catalysis. The van der Waals attractions and high surface energy, however, stack the MoSe₂ layers, resulting in a loss of edge active catalytic sites. In addition, MoSe₂ suffers from low intrinsic conductivity and weak electrical contact with active sites. To overcome the issues, this work presents a novel approach, wherein the in situ incorporated diethylene glycol solvent into the interlayers of MoSe₂ during synthesis when treated thermally in an inert atmosphere at 600 °C transformed into graphene (Gr). This widened the interlayer spacing of MoSe₂, thereby exposing more HER active edge sites with high conductivity offered by the incorporated Gr. The resulting MoSe₂-Gr composite exhibited a significantly enhanced HER catalytic activity compared to the pristine MoSe₂ in an acidic medium and demonstrated a superior HER catalytic activity compared to the state-of-the-art Pt/C catalyst, particularly at a high current density beyond ca. 55 mA cm^-2. Additionally, the MoSe₂-Gr catalyst demonstrated long-term electrochemical stability during HER. This work, thus, presents a facile and novel approach for obtaining an efficient MoSe₂ electrocatalyst applicable in green hydrogen production.

Energy transfer and charge transfer between semiconducting nanocrystals and transition metal dichalcogenide monolayers

Nowadays, as a result of the emergence of low-dimensional hybrid structures, the scientific community is interested in their interfacial carrier dynamics, including charge transfer and energy transfer. By combining the potential of transition metal dichalcogenides (TMDs) and nanocrystals (NCs) with low-dimensional extension, hybrid structures of semiconducting nanoscale matter can lead to fascinating new technological scenarios. Their characteristics make them intriguing candidates for electronic and optoelectronic devices, like transistors or photodetectors, bringing with them challenges but also opportunities. Here, we will review recent research on the combined TMD/NC hybrid system with an emphasis on two major interaction mechanisms: energy transfer and charge transfer. With a focus on the quantum well nature in these hybrid semiconductors, we will briefly highlight state-of-the-art protocols for their structure formation and discuss the interaction mechanisms of energy versus charge transfer, before concluding with a perspective section that highlights novel types of interactions between NCs and TMDs.

Identification of Ubiquitously Present Polymeric Adlayers on 2D Transition Metal Dichalcogenides

The interest in 2D materials continues to grow across numerous scientific disciplines as compounds with unique electrical, optical, chemical, and thermal characteristics are being discovered. All these properties are governed by an all-surface nature and nanoscale confinement, which can easily be altered by extrinsic influences, such as defects, dopants or strain, adsorbed molecules, and contaminants. Here, we report on the ubiquitous presence of polymeric adlayers on top of layered transition metal dichalcogenides (TMDs). The atomically thin layers, not evident from common analytic methods, such as Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), or scanning electron microscopy (SEM), could be identified with highly resolved time-of-flight secondary ion mass spectrometry (TOF-SIMS). The layers consist of hydrocarbons, which preferentially adsorb to the hydrophobic van der Waals surfaces of TMDs, derived from the most common methods. Fingerprint fragmentation patterns enable us to identify certain polymers and link them to those used during preparation and storage of the TMDs. The ubiquitous presence of polymeric films on 2D materials has wide reaching implications for their investigation, processing, and applications. In this regard, we reveal the nature of polymeric residues after commonly used transfer procedures on MoS₂ films and investigate several annealing procedures for their removal.

Triboelectric Nanogenerators Based on 2D Materials: From Materials and Devices to Applications

Recently, there has been an increasing consumption of fossil fuels such as oil and natural gas in both industrial production and daily life. This high demand for non-renewable energy sources has prompted researchers to investigate sustainable and renewable energy alternatives. The development and production of nanogenerators provide a promising solution to address the energy crisis. Triboelectric nanogenerators, in particular, have attracted significant attention due to their portability, stability, high energy conversion efficiency, and compatibility with a wide range of materials. Triboelectric nanogenerators (TENGs) have many potential applications in various fields, such as artificial intelligence (AI) and the Internet of Things (IoT). Additionally, by virtue of their remarkable physical and chemical properties, two-dimensional (2D) materials, such as graphene, transition metal dichalcogenides (TMDs), hexagonal boron nitride (h-BN), MXenes, and layered double hydroxides (LDHs), have played a crucial role in the advancement of TENGs. This review summarizes recent research progress on TENGs based on 2D materials, from materials to their practical applications, and provides suggestions and prospects for future research.

Advances in the Field of Two-Dimensional Crystal-Based Photodetectors

Two-dimensional (2D) materials have sparked intense interest among the scientific community owing to their extraordinary mechanical, optical, electronic, and thermal properties. In particular, the outstanding electronic and optical properties of 2D materials make them show great application potential in high-performance photodetectors (PDs), which can be applied in many fields such as high-frequency communication, novel biomedical imaging, national security, and so on. Here, the recent research progress of PDs based on 2D materials including graphene, transition metal carbides, transition-metal dichalcogenides, black phosphorus, and hexagonal boron nitride is comprehensively and systematically reviewed. First, the primary detection mechanism of 2D material-based PDs is introduced. Second, the structure and optical properties of 2D materials, as well as their applications in PDs, are heavily discussed. Finally, the opportunities and challenges of 2D material-based PDs are summarized and prospected. This review will provide a reference for the further application of 2D crystal-based PDs.

Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications

The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.

Multilayer In-Plane Heterostructures Based on Transition Metal Dichalcogenides for Advanced Electronics

In-plane heterostructures of transition metal dichalcogenides (TMDCs) have attracted much attention for high-performance electronic and optoelectronic devices. To date, mainly monolayer-based in-plane heterostructures have been prepared by chemical vapor deposition (CVD), and their optical and electrical properties have been investigated. However, the low dielectric properties of monolayers prevent the generation of high concentrations of thermally excited carriers from doped impurities. To solve this issue, multilayer TMDCs are a promising component for various electronic devices due to the availability of degenerate semiconductors. Here, we report the fabrication and transport properties of multilayer TMDC-based in-plane heterostructures. The multilayer in-plane heterostructures are formed through CVD growth of multilayer MoS₂ from the edges of mechanically exfoliated multilayer flakes of WSe₂ or Nb_xMo_1-xS₂. In addition to the in-plane heterostructures, we also confirmed the vertical growth of MoS₂ on the exfoliated flakes. For the WSe₂/MoS₂ sample, an abrupt composition change is confirmed by cross-sectional high-angle annular dark-field scanning transmission electron microscopy. Electrical transport measurements reveal that a tunneling current flows at the Nb_xMo_1-xS₂/MoS₂ in-plane heterointerface, and the band alignment is changed from a staggered gap to a broken gap by electrostatic electron doping of MoS₂. The formation of a staggered gap band alignment of Nb_xMo_1-xS₂/MoS₂ is also supported by first-principles calculations.

First-principles study on the electronic structure and photocatalytic property of a novel two-dimensional ZrS2/InSe heterojunction

Photocatalytic water cracking technology provides a broad prospect for solving the current energy crisis using solar energy and water resources. In this paper, a two-dimensional ZrS2/InSe heterojunction for accelerating the process of hydrogen production from water decomposition was constructed, and its electronic structure and photocatalytic property were studied using first-principles calculation. The results show that the lattice mismatch rate of the heterojunction from monolayer ZrS2 and monolayer InSe is 2.48%, and its binding energy is -1.696 eV, indicating that the structure of the heterojunction is stable. The ZrS2/InSe heterojunction is an indirect bandgap with a bandgap value of 1.41 eV and a typical type-II band arrangement. Importantly, the ZrS2/InSe heterostructure has a Z-scheme structure, which is beneficial to the separation of photogenerated electron hole pairs. Moreover, the ZrS2/InSe heterojunction has a strong absorption ability for visible light (up to 3.84 × 105 cm-1), which is helpful for improving its photocatalytic efficiency. The two-dimensional ZrS2/InSe heterojunction is a very promising photocatalyst, as concluded from the above studies.

Infrared Photodetection from 2D/3D van der Waals Heterostructures

An infrared photodetector is a critical component that detects, identifies, and tracks complex targets in a detection system. Infrared photodetectors based on 3D bulk materials are widely applied in national defense, military, communications, and astronomy fields. The complex application environment requires higher performance and multi-dimensional capability. The emergence of 2D materials has brought new possibilities to develop next-generation infrared detectors. However, the inherent thickness limitations and the immature preparation of 2D materials still lead to low quantum efficiency and slow response speeds. This review summarizes 2D/3D hybrid van der Waals heterojunctions for infrared photodetection. First, the physical properties of 2D and 3D materials related to detection capability, including thickness, band gap, absorption band, quantum efficiency, and carrier mobility, are summarized. Then, the primary research progress of 2D/3D infrared detectors is reviewed from performance improvement (broadband, high-responsivity, fast response) and new functional devices (two-color detectors, polarization detectors). Importantly, combining low-doped 3D and flexible 2D materials can effectively improve the responsivity and detection speed due to a significant depletion region width. Furthermore, combining the anisotropic 2D lattice structure and high absorbance of 3D materials provides a new strategy in high-performance polarization detectors. This paper offers prospects for developing 2D/3D high-performance infrared detection technology.

Salt-Assisted Low-Temperature Growth of 2D Bi2 O2 Se with Controlled Thickness for Electronics

Bi₂ O₂ Se is the most promising 2D material due to its semiconducting feature and high mobility, making it propitious channel material for high-performance electronics that demands highly crystalline Bi₂ O₂ Se at low-growth temperature. Here, a low-temperature salt-assisted chemical vapor deposition approach for growing single-domain Bi₂ O₂ Se on a millimeter scale with thicknesses of multilayer to monolayer is presented. Because of the advantage of thickness-dependent growth, systematical scrutiny of layer-dependent Raman spectroscopy of Bi₂ O₂ Se from monolayer to bulk is investigated, revealing a redshift of the A_1g mode at 162.4 cm^-1 . Moreover, the long-term environmental stability of ≈2.4 nm thick Bi₂ O₂ Se is confirmed after exposing the sample for 1.5 years to air. The backgated field effect transistor (FET) based on a few-layered Bi₂ O₂ Se flake represents decent carrier mobility (≈287 cm²  V^-1 s^-1 ) and an ON/OFF ratio of up to 10⁷ . This report indicates a technique to grow large-domain thickness controlled Bi₂ O₂ Se single crystals for electronics.

Graphene-Based Microwave Circuits: A Review

Over the past two decades, research on 2D materials has received much interest. Graphene is the most promising candidate regarding high-frequency applications thus far due to is high carrier mobility. Here, the research about the employment of graphene in micro- and millimeter-wave circuits is reviewed. The review starts with the different methodologies to grow and transfer graphene, before discussing the way graphene-based field-effect-transistors (GFETs) and diodes are built. A review on different approaches for realizing these devices is provided before discussing the employment of both GFETs and graphene diodes in different micro- and millimeter-wave circuits, showing the possibilities but also the limitations of this 2D material for high-frequency applications.

Engineered 2D materials for optical bioimaging and path toward therapy and tissue engineering

Two-dimensional (2D) layered materials as a new class of nanomaterial are characterized by a list of exotic properties. These layered materials are investigated widely in several biomedical applications. A comprehensive understanding of the state-of-the-art developments of 2D materials designed for multiple nanoplatforms will aid researchers in various fields to broaden the scope of biomedical applications. Here, we review the advances in 2D material-based biomedical applications. First, we introduce the classification and properties of 2D materials. Next, we summarize surface and structural engineering methods of 2D materials where we discuss surface functionalization, defect, and strain engineering, and creating heterostructures based on layered materials for biomedical applications. After that, we discuss different biomedical applications. Then, we briefly introduced the emerging role of machine learning (ML) as a technological advancement to boost biomedical platforms. Finally, the current challenges, opportunities, and prospects on 2D materials in biomedical applications are discussed.

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Hydrazine Hydrate Intercalated 1T-Dominant MoS2 with Superior Ambient Stability for Highly Efficient Electrocatalytic Applications

Metallic 1T-phase MoS₂ exhibits superior hydrogen evolution reaction (HER) performance than natural 2H-phase MoS₂ owing to its higher electrical conductivity and abundance of active sites. However, the reported 1T-MoS₂ catalysts usually suffer from extreme instability, which results in quick phase transformation at ambient conditions. Herein, we present a facile approach to engineer the phase of MoS₂ by introducing intercalated hydrazine. Interestingly, the as-synthesized 1T-dominant MoS₂ sample demonstrates excellent ambient stability without noticeable degradation for 3 months. Additionally, the 1T-dominant MoS₂ exhibits superior electrical conductivity (∼700 times higher than that of 2H-MoS₂) and improved electrochemical catalytic performance (current density ∼12 times larger than that of 2H-MoS₂ at an overpotential of 300 mV vs the reversible hydrogen electrode, RHE). Through experimental characterizations and density functional theory (DFT) calculation, we conclude that the stabilization of the metallic phase could be attributed to the electron donation from hydrazine molecules to the adjacent Mo atoms. The phase control strategy in this work provides a guideline to develop other highly efficient and stable two-dimensional (2D) electrocatalysts.

Role of tilt grain boundaries on the structural integrity of WSe2 monolayers

Grain boundaries in transition metal dichalcogenides have a profound effect on their characteristics.

Selective and sensitive toxic gas sensors mechanism in 2D Janus MoSSe monolayer

With an inspiration of sensing toxic gases, this paper aims to explore potential of Janus MoSSe monolayer as gas sensor. Here, we focused on adsorption mechanism after the exposure of...

Temperature-induced polymorphism of a benzothiophene derivative: reversibility and impact on the thin film morphology

We report the formation of a high temperature polymorph when C8O–BTBT–OC8 films are annealed, with different scenarios after cooling.

Adjusting the electronic properties and contact types of graphene/F-diamane-like C4F2 van der Waals heterostructure: a first principles study

Motivated by the successful exfoliation of two-dimensional F-diamane-like C4F2 monolayer and the superior properties of graphene-based vdW heterostructures, in this work, we perform a first principles study to investigate the atomic structure, electronic properties and contact types of the graphene/F-diamane-like C4F2 heterostructure. The graphene/C4F2 vdW heterostructure is structurally stable at room temperature. In the ground state, the graphene/C4F2 heterostructure forms n-type Schottky contact with a Schottky barrier height of 0.46/1.03 eV given by PBE/HSE06. The formation of the graphene/C4F2 heterostructure tends to decrease in the band gap of the semiconducting C4F2 layer, suggesting that such a heterostructure may have strong optical absorption. Furthermore, the electronic properties and contact types of the graphene/C4F2 heterostructure can be adjusted by applying an external electric field, which leads to the change in the Schottky barrier height and the transformation from Schottky to ohmic contact. Our findings reveal the potential of the graphene/C4F2 heterostructure as a tunable hybrid material with strong potential in electronic applications.

Electrical and optical properties of transition metal dichalcogenides on talc dielectrics

Advanced van der Waals (vdW) heterostructure devices rely on the incorporation of high quality dielectric materials which need to possess a low defect density as well as being atomically smooth and uniform. In this work we explore the use of talc dielectrics as a potentially clean alternative substrate to hexagonal boron nitride (hBN) for few-layer transition metal dichalcogenide (TMDC) transistors and excitonic TMDC monolayers. We find that talc dielectric transistors show small hysteresis which does not depend strongly on sweep rate and show negligible leakage current for our studied dielectric thicknesses. We also show narrow photoluminescence linewidths down to 10 meV for different TMDC monolayers on talc which highlights that talc is a promising material for future van der Waals devices.

Low-Temperature Fabrication of IZO Thin Film for Flexible Transistors

Solution-processed thin film transistors (TFTs) used in flexible electronics require them to be fabricated under low temperature. Ultraviolet (UV) treatment is an effective method to transform the solution precursors into dense semiconductor films. In our work, high-quality indium zinc oxide (IZO) thin films were prepared from nitrate-based precursors after UV treatment at room temperature. After UV treatment, the structure of IZO thin films was gradually rearranged, resulting in good M–O–M network formation and bonds. TFTs using IZO as a channel layer were also fabricated on Si and Polyimide (PI) substrate. The field effect mobility, threshold voltage (V_th), and subthreshold swing (SS) for rigid and flexible IZO TFTs are 14.3 and 9.5 cm²/Vs, 1.1 and 1.7 V, and 0.13 and 0.15 V/dec., respectively. This low-temperature processed route will definitely contribute to flexible electronics fabrication.

Deep learning enabled classification of real-time respiration signals acquired by MoSSe quantum dot-based flexible sensors

Respiration rate is a vital parameter which is useful for the earlier identification of diseases. In this context, various types of devices have been fabricated and developed to monitor different breath rates. However, the disposability and biocompatibility of such sensors and the poor classification of different breath rates from sensor data are significant issues in medical services. This report attempts to focus on two important things: the classification of respiration signals from sensor data using deep learning and the disposability of devices. The use of the novel Janus MoSSe quantum dot (MoSSe QD) structure allows for stable respiration sensing because of unchanged wear rates under humid conditions, and also, the electron affinity and work function values suggest that MoSSe has a higher tendency to donate electrons and interact with the hydrogen molecule. Furthermore, for the real-time classification of different respiration signals, a 1D convolutional neural network (1D CNN) was incorporated. This algorithm was applied to four different breath patterns which achieved a state-of-the-art 10-trial accuracy of 98.18% for normal, 95.25% for slow, 97.64% for deep, and 98.18% for fast breaths. The successful demonstration of a stable, low-cost, and disposable respiration sensor with a highly accurate classification of signals is a major step ahead in developing wearable respiration sensors for future personal healthcare monitoring systems.

Self-Powered Sensors: New Opportunities and Challenges from Two-Dimensional Nanomaterials

Nanomaterials have gained considerable attention over the last decade, finding applications in emerging fields such as wearable sensors, biomedical care, and implantable electronics. However, these applications require miniaturization operating with extremely low power levels to conveniently sense various signals anytime, anywhere, and show the information in various ways. From this perspective, a crucial field is technologies that can harvest energy from the environment as sustainable, self-sufficient, self-powered sensors. Here we revisit recent advances in various self-powered sensors: optical, chemical, biological, medical, and gas. A timely overview is provided of unconventional nanomaterial sensors operated by self-sufficient energy, focusing on the energy source classification and comparisons of studies including self-powered photovoltaic, piezoelectric, triboelectric, and thermoelectric technology. Integration of these self-operating systems and new applications for neuromorphic sensors are also reviewed. Furthermore, this review discusses opportunities and challenges from self-powered nanomaterial sensors with respect to their energy harvesting principles and sensing applications.

Recent Advances in Two-Dimensional Transition Metal Dichalcogenide Nanocomposites Biosensors for Virus Detection before and during COVID-19 Outbreak

The deadly Severe Acute Respiratory Syndrome Coronavirus 2 (SARS-CoV-2) outbreak has become one of the most challenging pandemics in the last century. Clinical diagnosis reports a high infection rate within a large population and a rapid mutation rate upon every individual infection. The polymerase chain reaction has been a powerful and gold standard molecular diagnostic technique over the past few decades and hence a promising tool to detect the SARS-CoV-2 nucleic acid sequences. However, it can be costly and involved in complicated processes with a high demand for on-site tests. This pandemic emphasizes the critical need for designing cost-effective and fast diagnosis strategies to prevent a potential viral source by ultrasensitive and selective biosensors. Two-dimensional (2D) transition metal dichalcogenide (TMD) nanocomposites have been developed with unique physical and chemical properties crucial for building up nucleic acid and protein biosensors. In this review, we cover various types of 2D TMD biosensors available for virus detection via the mechanisms of photoluminescence/optical, field-effect transistor, surface plasmon resonance, and electrochemical signals. We summarize the current state-of-the-art applications of 2D TMD nanocomposite systems for sensing proteins/nucleic acid from different types of lethal viruses. Finally, we identify and discuss the advantages and limitations of TMD-based nanocomposites biosensors for viral recognition.

Efficient ReSe2 Photodetectors with CVD Single-Crystal Graphene Contacts

Rhenium-based 2D transition metal dichalcogenides such as ReSe₂ are suitable candidates as photoactive materials for optoelectronic devices. Here, photodetectors based on mechanically exfoliated ReSe₂ crystals were fabricated using chemical vapor deposited (CVD) graphene single-crystal (GSC) as lateral contacts. A “pick & place” method was adopted to transfer the desired crystals to the intended position, easing the device fabrication while reducing potential contaminations. A similar device with Au was fabricated to compare contacts’ performance. Lastly, a CVD hexagonal boron nitride (hBN) substrate passivation layer was designed and introduced in the device architecture. Raman spectroscopy was carried out to evaluate the device materials’ structural and electronic properties. Kelvin probe force measurements were done to calculate the materials’ work function, measuring a minimal Schottky barrier height for the GSC/ReSe₂ contact (0.06 eV). Regarding the electrical performance, I-V curves showed sizable currents in the GSC/ReSe₂ devices in the dark and under illumination. The devices presented high photocurrent and responsivity, along with an external quantum efficiency greatly exceeding 100%, confirming the non-blocking nature of the GSC contacts at high bias voltage (above 2 V). When introducing the hBN passivation layer, the device under white light reached a photo-to-dark current ratio up to 10⁶.

Air-stable and efficient electron doping of monolayer MoS2 by salt-crown ether treatment

To maximize the potential of transition-metal dichalcogenides (TMDCs) in device applications, the development of a sophisticated technique for stable and highly efficient carrier doping is critical. Here, we report the efficient n-type doping of monolayer MoS2 using KOH/benzo-18-crown-6, resulting in a doped TMDC that is air-stable. MoS2 field-effect transistors show an increase in on-current of three orders of magnitude and degenerate the n-type behaviour with high air-stability for ∼1 month as the dopant concentration increases. Transport measurements indicate a high electron density of 3.4 × 1013 cm-2 and metallic-type temperature dependence for highly doped MoS2. First-principles calculations support electron doping via surface charge transfer from the K/benzo-18-crown-6 complex to monolayer MoS2. Patterned doping is demonstrated to improve the contact resistance in MoS2-based devices.

MoS2/WSe2nanohybrids for flexible paper-based photodetectors

Flexible photodetectors functionalized by transition metal dichalcogenides have attracted great attention due to their excellent photo-harvesting efficiency. However, the field of optoelectronics still requires advancement in the production of large-area, broad band and flexible photodetectors. Here we report a flexible, stable, broad band and fast photodetector based on a MoS₂/WSe₂heterostructure on ordinary photocopy paper with pencil-drawn graphite electrodes. Ultrathin MoS₂/WSe₂nanohybrids have been synthesized by an ultrahigh yield liquid-phase exfoliation technique. The thin sheets of WSe₂, and MoS₂contain two to four layers with a highly c-oriented crystalline structure. Subsequently, the photodetector was exploited under ultra-broad spectral range from 400 to 780 nm. The photodetector exhibits excellent figure of merit such as on/off ratio of the order of 10³, photoresponsivity of 124 mA W^-1and external quantum efficiency of 23.1%. Encouragingly, rise/decay time of about 0.1/0.3 s was realized, which is better than in previous reports on paper-based devices.

Superconductivity and strong anharmonicity in novel Nb-S phases

In this work we explore the phase diagram of the binary Nb-S system from ambient pressures up to 250 GPa usingab initioevolutionary crystal structure prediction. We find several new stable compositions and phases, especially in the high-pressure regime, and investigate their electronic, vibrational, and superconducting properties. Our calculations show that all materials, besides the low-pressure phases of pure sulfur, are metals with low electron-phonon (ep) coupling strengths and critical superconducting temperatures below 15 K. Furthermore, we investigate the effects of phonon anharmonicity on lattice dynamics, ep interactions, and superconductivity for the novel high-pressure phase of Nb₂S, demonstrating that the inclusion of anharmonicity stabilizes the lattice and enhances the ep interaction.

A bio-syncretic phototransistor based on optogenetically engineered living cells

Human eyes rely on photosensitive receptors to convert light intensity into action potentials for visual perception, and thus bio-inspired photodetectors with bioengineered photoresponsive elements for visual prostheses have received considerable attention by virtue of superior biological functionality and better biocompatibility. However, the current bioengieered photodetectors based on biological elements face a lot of challenges such as slow response time and lack of effective detection of weak bioelectrical signals, resulting in difficulty to perform imaging. Here, we report a human eye-inspired phototransistor by integrating optogenetically engineered living cells and a graphene-based transistor. The living cells, engineered with photosensitive ion channels, channelrhodopsin-2 (ChR2), and thus endowed with the capability of transducing light intensity into bioelectrical signals, are coupled with the graphene layer of the transistor and can regulate the transistor's output. The results show that the photosensitive ion channels enable the phototransistor to output stronger photoelectrical currents with relatively fast response (~25 ms) and wider dynamic range, and demonstrate the transistor owns optical and biological gating with a significant large on/off ratio of 197.5 and high responsivity of 1.37 mA W^-1. An artificial imaging system, which mimics the pathway of human visual information transmission from the retina through the lateral geniculate nucleus to the visual cortex, is constructed with the transistor and demonstrate the feasibility of imaging using the bioengineered cells. This work shows a potential that optogenetically engineered cells can be used to develop novel visual prostheses and paves a new avenue for engineering bio-syncretic sensing devices.

Evolution of low-dimensional material-based field-effect transistors

Field-effect transistors (FETs) have tremendous applications in the electronics industry due to their outstanding features such as small size, easy fabrication, compatibility with integrated electronics, high sensitivity, rapid detection and easy measuring procedures. However, to meet the increasing demand of the electronics industry, efficient FETs with controlled short channel effects, enhanced surface stability, reduced size, and superior performances based on low-dimensional materials are desirable. In this review, we present the developmental roadmap of FETs from conventional to miniaturized devices and highlight their prospective applications in the field of optoelectronic devices. Initially, a detailed study of the general importance of bulk and low-dimensional materials is presented. Then, recent advances in low-dimensional material heterostructures, classification of FETs, and the applications of low-dimensional materials in field-effect transistors and photodetectors are presented in detail. In addition, we also describe current issues in low-dimensional material-based FETs and propose potential approaches to address these issues, which are crucial for developing electronic and optoelectronic devices. This review will provide guidelines for low-dimensional material-based FETs with high performance and advanced applications in the future.

Low-Temperature Synthesis of Wafer-Scale MoS2-WS2 Vertical Heterostructures by Single-Step Penetrative Plasma Sulfurization

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted considerable attention owing to their synergetic effects with other 2D materials, such as graphene and hexagonal boron nitride, in TMD-based heterostructures. Therefore, it is important to understand the physical properties of TMD-TMD vertical heterostructures for their applications in next-generation electronic devices. However, the conventional synthesis process of TMD-TMD heterostructures has some critical limitations, such as nonreproducibility and low yield. In this paper, we synthesize wafer-scale MoS₂-WS₂ vertical heterostructures (MWVHs) using plasma-enhanced chemical vapor deposition (PE-CVD) via penetrative single-step sulfurization discovered by time-dependent analysis. This method is available for fabricating uniform large-area vertical heterostructures (4 in.) at a low temperature (300 °C). MWVHs were characterized using various spectroscopic and microscopic techniques, which revealed their uniform nanoscale polycrystallinity and the presence of vertical layers of MoS₂ and WS₂. In addition, wafer-scale MWVHs diodes were fabricated and demonstrated uniform performance by current mapping. Furthermore, mode I fracture tests were performed using large double cantilever beam specimens to confirm the separation of the MWVHs from the SiO₂/Si substrate. Therefore, this study proposes a synthesis mechanism for TMD-TMD heterostructures and provides a fundamental understanding of the interfacial properties of TMD-TMD vertical heterostructures.

The effect of 2D tungsten disulfide nanoparticles on Lewis lung carcinoma cells in vitro

The unique physicochemical properties of modern two-dimensional (2D) nanomaterials with graphene-like structures make them promising candidates for biology and medicine purposes. In this article, we investigate the influence of the two-dimensional tungsten disulfide (2D WS₂) water suspension nanoparticles obtained by an improved mechanochemical method from powdered WS₂ on morphological and structural characteristics of Lewis lung carcinoma cells using FT-IR, Raman spectroscopy, and confocal microscopy. The characterization of the 2D WS₂ nanoparticles by different physical methods is given also. We have highlighted that 2D WS₂ does not exert cytotoxic activity in the case of 1 day incubation with tumor cells. Prolongation of the incubation period up to 2 days has caused a statistically significant (p < 0.05) concentration-dependent decrease of the number of viable cells by more than 30% with the maximum cytotoxic effect at concentrations of 2D WS₂ close to 2 μg ml⁻¹. In the Raman spectra of 2D WS₂ treated cells the bands centered at 354 cm⁻¹ and 419 cm⁻¹, which are assigned to characteristics and modes of WS₂ nanoparticles were observed. The obtained data indicate, that the cytotoxic effect of 2D WS₂ on tumor cells in the case of long-term incubation is realized particularly through the ability of 2D WS₂ to enter tumor cells and/or accumulate on their surface, which gives a rationale to conduct further studies of their antitumor efficacy in vitro and in vivo when combined with chemotherapeutic drugs.

WS₂ 2D nanoparticles show no cytotoxic and/or cytostatic effect on Lewis lung carcinoma cells after one day incubation. Only after two days incubation we registered cytotoxic effect. Cells incubated with 2D WS₂ nanoparticles have luminescence in the blue spectral region.

Recent Advances in the Carrier Mobility of Two-Dimensional Materials: A Theoretical Perspective

Since the breakthrough of graphene, 2D materials have engrossed tremendous research attention due to their extraordinary properties and potential applications in electronic and optoelectronic devices. The high carrier mobility in the semiconducting material is critical to guarantee a high switching speed and low power dissipation in the corresponding device. Here, we review significant recent advances and important new developments in the carrier mobility of 2D materials based on theoretical investigations. We focus on some of the most widely studied 2D materials, their development, and future applications. Based on the current progress in this field, we conclude the review by providing challenges and an outlook in this field.

Transition Metal Dichalcogenides for the Application of Pollution Reduction: A Review

The material characteristics and properties of transition metal dichalcogenide (TMDCs) have gained research interest in various fields, such as electronics, catalytic, and energy storage. In particular, many researchers have been focusing on the applications of TMDCs in dealing with environmental pollution. TMDCs provide a unique opportunity to develop higher-value applications related to environmental matters. This work highlights the applications of TMDCs contributing to pollution reduction in (i) gas sensing technology, (ii) gas adsorption and removal, (iii) wastewater treatment, (iv) fuel cleaning, and (v) carbon dioxide valorization and conversion. Overall, the applications of TMDCs have successfully demonstrated the advantages of contributing to environmental conversation due to their special properties. The challenges and bottlenecks of implementing TMDCs in the actual industry are also highlighted. More efforts need to be devoted to overcoming the hurdles to maximize the potential of TMDCs implementation in the industry.

Gas-Phase Formation of Highly Luminescent 2D GaSe Nanoparticle Ensembles in a Nonequilibrium Laser Ablation Process

Interest in layered two-dimensional (2D) materials has been escalating rapidly over the past few decades due to their promising optoelectronic and photonic properties emerging from their atomically thin 2D structural confinements. When these 2D materials are further confined in lateral dimensions toward zero-dimensional (0D) structures, 2D nanoparticles and quantum dots with new properties can be formed. Here, we report a nonequilibrium gas-phase synthesis method for the stoichiometric formation of gallium selenide (GaSe) nanoparticles ensembles that can potentially serve as quantum dots. We show that the laser ablation of a target in an argon background gas condenses the laser-generated plume, resulting in the formation of metastable nanoparticles in the gas phase. The deposition of these nanoparticles onto the substrate results in the formation of nanoparticle ensembles, which are then post-processed to crystallize or sinter the nanoparticles. The effects of background gas pressures, in addition to crystallization/sintering temperatures, are systematically studied. Scanning electron microscopy (SEM), transmission electron microscopy (TEM), photoluminescence (PL) spectroscopy, and time-correlated single-photon counting (TCSPC) measurements are used to study the correlations between growth parameters, morphology, and optical properties of the fabricated 2D nanoparticle ensembles.