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Pham T, Reidy K, Thomsen JD, Wang B, Deshmukh N, Filler MA, Ross FM. Salt-Assisted Vapor-Liquid-Solid Growth of 1D van der Waals Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2309360. [PMID: 38479025 DOI: 10.1002/adma.202309360] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/11/2023] [Revised: 11/27/2023] [Indexed: 03/20/2024]
Abstract
The method of salt-assisted vapor-liquid-solid (VLS) growth is introduced to synthesize 1D nanostructures of trichalcogenide van der Waals (vdW) materials, exemplified by niobium trisulfide (NbS3). The method uses a unique catalyst consisting of an alloy of Au and an alkali metal halide (NaCl) to enable rapid and directional growth. High yields of two types of NbS3 1D nanostructures, nanowires and nanoribbons, each with sub-ten nanometer diameter, tens of micrometers length, and distinct 1D morphology and growth orientation are demonstrated. Strategies to control the location, size, and morphology of growth, and extend the growth method to synthesize other transition metal trichalcogenides, NbSe3 and TiS3, as nanowires are demonstrated. Finally, the role of the Au-NaCl alloy catalyst in guiding VLS synthesis is described and the growth mechanism based on the relationships measured between structure (growth orientation, morphology, and dimensions) and growth conditions (catalyst volume and growth time) is discussed. These results introduce opportunities to expand the library of emerging 1D vdW materials to make use of their unique properties through controlled growth at nanoscale dimensions.
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Affiliation(s)
- Thang Pham
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Kate Reidy
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Joachim D Thomsen
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Baoming Wang
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Nishant Deshmukh
- School of Chemical and Biomolecular Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Michael A Filler
- School of Chemical and Biomolecular Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Frances M Ross
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
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2
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Lozano MS, Gómez VJ. Epitaxial growth of crystal phase quantum dots in III-V semiconductor nanowires. NANOSCALE ADVANCES 2023; 5:1890-1909. [PMID: 36998660 PMCID: PMC10044505 DOI: 10.1039/d2na00956k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/30/2022] [Accepted: 03/06/2023] [Indexed: 06/19/2023]
Abstract
Crystal phase quantum dots (QDs) are formed during the axial growth of III-V semiconductor nanowires (NWs) by stacking different crystal phases of the same material. In III-V semiconductor NWs, both zinc blende (ZB) and wurtzite (WZ) crystal phases can coexist. The band structure difference between both crystal phases can lead to quantum confinement. Thanks to the precise control in III-V semiconductor NW growth conditions and the deep knowledge on the epitaxial growth mechanisms, it is nowadays possible to control, down to the atomic level, the switching between crystal phases in NWs forming the so-called crystal phase NW-based QDs (NWQDs). The shape and size of the NW bridge the gap between QDs and the macroscopic world. This review is focused on crystal phase NWQDs based on III-V NWs obtained by the bottom-up vapor-liquid-solid (VLS) method and their optical and electronic properties. Crystal phase switching can be achieved in the axial direction. In contrast, in the core/shell growth, the difference in surface energies between different polytypes can enable selective shell growth. One reason for the very intense research in this field is motivated by their excellent optical and electronic properties both appealing for applications in nanophotonics and quantum technologies.
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Affiliation(s)
- Miguel Sinusia Lozano
- Nanophotonics Technology Center, Universitat Politècnica de València, Camino de Vera s/n Building 8F, 2a Floor 46022 Valencia Spain
| | - Víctor J Gómez
- Nanophotonics Technology Center, Universitat Politècnica de València, Camino de Vera s/n Building 8F, 2a Floor 46022 Valencia Spain
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3
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Nebol’sin V, Levchenko EV, Yuryev V, Swaikat N. About the Shape of the Crystallization Front of the Semiconductor Nanowires. ACS OMEGA 2023; 8:8263-8275. [PMID: 36910933 PMCID: PMC9996779 DOI: 10.1021/acsomega.2c06475] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/07/2022] [Accepted: 02/08/2023] [Indexed: 06/18/2023]
Abstract
During the nanowire (NW) formation, the growth steps reaching the crystallization front (CF) under the catalytic drop are either absorbed by the three-phase line or accumulated in front of it, curving the surface of the front. In this paper, we have analyzed the conditions leading to a change of shape of the crystallization front of the NWs under the catalyst drop as well as the reasons for the formation of atomically smooth (singular) and curved (nonsingular) regions. A model explaining the curvature of the crystallization front under the drop in the process of NW growth is proposed. The model demonstrates that under conditions of good wettability of the crystalline surface with a catalytic liquid and nucleation at regular places of the growing NW face, a metastable equilibrium at the CF near the three-phase line is achieved due to the thermodynamic size effect of reduction of overcooling (supersaturation). This metastable equilibrium results in the curvature of the CF. The CF curvature depends on the NW radius and the level of overcooling (supersaturation) in the droplet. During this process, the low-index inclined facets adjacent to the wetting perimeter of the catalyst drop may appear on the curved CF.
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Affiliation(s)
- Valery
A. Nebol’sin
- Department
of Radio Engineering and Electronics, Voronezh
State Technical University, 14 Moskovsky Pr., 394026 Voronezh, Russia
| | - Elena V. Levchenko
- School
of Information and Physical Sciences, College of Engineering, Science
and Environment, University of Newcastle, Callaghan, NSW 2308, Australia
| | - Vladimir Yuryev
- Department
of Radio Engineering and Electronics, Voronezh
State Technical University, 14 Moskovsky Pr., 394026 Voronezh, Russia
| | - Nada Swaikat
- Department
of Radio Engineering and Electronics, Voronezh
State Technical University, 14 Moskovsky Pr., 394026 Voronezh, Russia
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Abstract
Nucleation and growth are critical steps in crystallization, which plays an important role in determining crystal structure, size, morphology, and purity. Therefore, understanding the mechanisms of nucleation and growth is crucial to realize the controllable fabrication of crystalline products with desired and reproducible properties. Based on classical models, the initial crystal nucleus is formed by the spontaneous aggregation of ions, atoms, or molecules, and crystal growth is dependent on the monomer's diffusion and the surface reaction. Recently, numerous in situ investigations on crystallization dynamics have uncovered the existence of nonclassical mechanisms. This review provides a summary and highlights the in situ studies of crystal nucleation and growth, with a particular emphasis on the state-of-the-art research progress since the year 2016, and includes technological advances, atomic-scale observations, substrate- and temperature-dependent nucleation and growth, and the progress achieved in the various materials: metals, alloys, metallic compounds, colloids, and proteins. Finally, the forthcoming opportunities and challenges in this fascinating field are discussed.
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Affiliation(s)
- Junjie Li
- Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Xinjiang Key Laboratory of Electronic Information Materials and Devices, 40-1 South Beijing Road, Urumqi830011, China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing100049, China
| | - Francis Leonard Deepak
- Nanostructured Materials Group, International Iberian Nanotechnology Laboratory (INL), Av. Mestre Jose Veiga, 4715-330Braga, Portugal
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5
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Gómez VJ, Marnauza M, Dick KA, Lehmann S. Growth selectivity control of InAs shells on crystal phase engineered GaAs nanowires. NANOSCALE ADVANCES 2022; 4:3330-3341. [PMID: 36131713 PMCID: PMC9417278 DOI: 10.1039/d2na00109h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/16/2022] [Accepted: 03/23/2022] [Indexed: 06/15/2023]
Abstract
In this work we demonstrate a two-fold selectivity control of InAs shells grown on crystal phase and morphology engineered GaAs nanowire (NW) core templates. This selectivity occurs driven by differences in surface energies of the NW core facets. The occurrence of the different facets itself is controlled by either forming different crystal phases or additional tuning of the core NW morphology. First, in order to study the crystal phase selectivity, GaAs NW cores with an engineered crystal phase in the axial direction were employed. A crystal phase selective growth of InAs on GaAs was found for high growth rates and short growth times. Secondly, the facet-dependant selectivity of InAs growth was studied on crystal phase controlled GaAs cores which were additionally morphology-tuned by homoepitaxial overgrowth. Following this route, the original hexagonal cores with {110} sidewalls were converted into triangular truncated NWs with ridges and predominantly {112}B facets. By precisely tuning the growth parameters, the growth of InAs is promoted over the ridges and reduced over the {112}B facets with indications of also preserving the crystal phase selectivity. In all cases (different crystal phase and facet termination), selectivity is lost for extended growth times, thus, limiting the total thickness of the shell grown under selective conditions. To overcome this issue we propose a 2-step growth approach, combining a high growth rate step followed by a low growth rate step. The control over the thickness of the InAs shells while maintaining the selectivity is demonstrated by means of a detailed transmission electron microscopy analysis. This proposed 2-step growth approach enables new functionalities in 1-D structures formed by using bottom-up techniques, with a high degree of control over shell thickness and deposition selectivity.
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Affiliation(s)
- Víctor J Gómez
- Nanophotonics Technology Center, Universidad Politécnica de Valencia Camino de Vera, s/n Building 8F | 2a Floor 46022 Valencia Spain
- Solid State Physics and NanoLund, Lund University Box 118 S-221 00 Lund Sweden
| | - Mikelis Marnauza
- Centre for Analysis and Synthesis and NanoLund, Lund University Box 124 221 00 Lund Sweden
| | - Kimberly A Dick
- Solid State Physics and NanoLund, Lund University Box 118 S-221 00 Lund Sweden
- Centre for Analysis and Synthesis and NanoLund, Lund University Box 124 221 00 Lund Sweden
| | - Sebastian Lehmann
- Solid State Physics and NanoLund, Lund University Box 118 S-221 00 Lund Sweden
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Maliakkal CB, Jacobsson D, Tornberg M, Dick KA. Post-nucleation evolution of the liquid-solid interface in nanowire growth. NANOTECHNOLOGY 2021; 33:105607. [PMID: 34847548 DOI: 10.1088/1361-6528/ac3e8d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/01/2021] [Accepted: 11/30/2021] [Indexed: 06/13/2023]
Abstract
We study usingin situtransmission electron microscopy the birth of GaAs nanowires from liquid Au-Ga catalysts on amorphous substrates. Lattice-resolved observations of the starting stages of growth are reported here for the first time. It reveals how the initial nanostructure evolves into a nanowire growing in a zincblende 〈111〉 or the equivalent wurtzite〈0001〉 direction. This growth direction(s) is what is typically observed in most III-V and II-VI nanowires. However, the reason for this preferential nanowire growth along this direction is still a dilemma. Based on the videos recorded shortly after the nucleation of nanowires, we argue that the lower catalyst droplet-nanowire interface energy of the {111} facet when zincblende (or the equivalent {0001} facet in wurtzite) is the reason for this direction selectivity in nanowires.
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Affiliation(s)
- Carina B Maliakkal
- Centre for Analysis and Synthesis, Lund University, Box 124, 22100, Lund, Sweden
- Solid State Physics, Lund University, Box 118, 22100, Lund, Sweden
- NanoLund, Lund University, Box 118, 22100, Lund, Sweden
| | - Daniel Jacobsson
- Centre for Analysis and Synthesis, Lund University, Box 124, 22100, Lund, Sweden
- NanoLund, Lund University, Box 118, 22100, Lund, Sweden
- National Center for High Resolution Electron Microscopy, Lund University, Box 124, 22100, Lund, Sweden
| | - Marcus Tornberg
- Centre for Analysis and Synthesis, Lund University, Box 124, 22100, Lund, Sweden
- NanoLund, Lund University, Box 118, 22100, Lund, Sweden
| | - Kimberly A Dick
- Centre for Analysis and Synthesis, Lund University, Box 124, 22100, Lund, Sweden
- NanoLund, Lund University, Box 118, 22100, Lund, Sweden
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7
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Maliakkal CB, Tornberg M, Jacobsson D, Lehmann S, Dick KA. Vapor-solid-solid growth dynamics in GaAs nanowires. NANOSCALE ADVANCES 2021; 3:5928-5940. [PMID: 36132677 PMCID: PMC9418180 DOI: 10.1039/d1na00345c] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/12/2021] [Accepted: 08/05/2021] [Indexed: 05/17/2023]
Abstract
Semiconductor nanowires are promising material systems for coming-of-age nanotechnology. The usage of the vapor-solid-solid (VSS) route, where the catalyst used for promoting axial growth of nanowires is a solid, offers certain advantages compared to the common vapor-liquid-solid (VLS) route (using a liquid catalyst). The VSS growth of group-IV elemental nanowires has been investigated by other groups in situ during growth in a transmission electron microscope (TEM). Though it is known that compound nanowire growth has different dynamics compared to elemental semiconductors, the layer growth dynamics of VSS growth of compound nanowires have not been studied yet. Here we investigate for the first time controlled VSS growth of compound nanowires by in situ microscopy, using Au-seeded GaAs as a model system. The ledge-flow growth kinetics and dynamics at the wire-catalyst interface are studied and compared for liquid and solid catalysts under similar growth conditions. Here the temperature and thermal history of the system are manipulated to control the catalyst phase. In the first experiment discussed here we reduce the growth temperature in steps to solidify the initially liquid catalyst, and compare the dynamics between VLS and VSS growth observed at slightly different temperatures. In the second experiment we exploit thermal hysteresis of the system to obtain both VLS and VSS at the same temperature. The VSS growth rate is comparable or slightly slower than the VLS growth rate. Unlike in the VLS case, during VSS growth we frequently observe that a new layer starts before the previous layer is completely grown, i.e., 'multilayer growth'. Understanding the VSS growth mode enables better control of nanowire properties by widening the range of usable nanowire growth parameters.
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Affiliation(s)
- Carina B Maliakkal
- Centre for Analysis and Synthesis, Lund University Box 124 22100 Lund Sweden
- Solid State Physics, Lund University Box 118 22100 Lund Sweden
- NanoLund, Lund University Box 118 22100 Lund Sweden
| | - Marcus Tornberg
- Centre for Analysis and Synthesis, Lund University Box 124 22100 Lund Sweden
- Solid State Physics, Lund University Box 118 22100 Lund Sweden
- NanoLund, Lund University Box 118 22100 Lund Sweden
| | - Daniel Jacobsson
- Centre for Analysis and Synthesis, Lund University Box 124 22100 Lund Sweden
- NanoLund, Lund University Box 118 22100 Lund Sweden
- National Center for High Resolution Electron Microscopy, Lund University Box 124 22100 Lund Sweden
| | - Sebastian Lehmann
- Solid State Physics, Lund University Box 118 22100 Lund Sweden
- NanoLund, Lund University Box 118 22100 Lund Sweden
| | - Kimberly A Dick
- Centre for Analysis and Synthesis, Lund University Box 124 22100 Lund Sweden
- Solid State Physics, Lund University Box 118 22100 Lund Sweden
- NanoLund, Lund University Box 118 22100 Lund Sweden
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8
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Garcia-Gil A, Biswas S, Holmes JD. A Review of Self-Seeded Germanium Nanowires: Synthesis, Growth Mechanisms and Potential Applications. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:2002. [PMID: 34443831 PMCID: PMC8398625 DOI: 10.3390/nano11082002] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/02/2021] [Revised: 07/23/2021] [Accepted: 07/30/2021] [Indexed: 12/14/2022]
Abstract
Ge nanowires are playing a big role in the development of new functional microelectronic modules, such as gate-all-around field-effect transistor devices, on-chip lasers and photodetectors. The widely used three-phase bottom-up growth method utilising a foreign catalyst metal or metalloid is by far the most popular for Ge nanowire growth. However, to fully utilise the potential of Ge nanowires, it is important to explore and understand alternative and functional growth paradigms such as self-seeded nanowire growth, where nanowire growth is usually directed by the in situ-formed catalysts of the growth material, i.e., Ge in this case. Additionally, it is important to understand how the self-seeded nanowires can benefit the device application of nanomaterials as the additional metal seeding can influence electron and phonon transport, and the electronic band structure in the nanomaterials. Here, we review recent advances in the growth and application of self-seeded Ge and Ge-based binary alloy (GeSn) nanowires. Different fabrication methods for growing self-seeded Ge nanowires are delineated and correlated with metal seeded growth. This review also highlights the requirement and advantage of self-seeded growth approach for Ge nanomaterials in the potential applications in energy storage and nanoelectronic devices.
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Affiliation(s)
- Adrià Garcia-Gil
- School of Chemistry, Tyndall National Institute, University College Cork, T12 YN60 Cork, Ireland; (A.G.-G.); (J.D.H.)
- AMBER Centre, Environmental Research Institute, University College Cork, T23 XE10 Cork, Ireland
| | - Subhajit Biswas
- School of Chemistry, Tyndall National Institute, University College Cork, T12 YN60 Cork, Ireland; (A.G.-G.); (J.D.H.)
- AMBER Centre, Environmental Research Institute, University College Cork, T23 XE10 Cork, Ireland
| | - Justin D. Holmes
- School of Chemistry, Tyndall National Institute, University College Cork, T12 YN60 Cork, Ireland; (A.G.-G.); (J.D.H.)
- AMBER Centre, Environmental Research Institute, University College Cork, T23 XE10 Cork, Ireland
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9
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Izquierdo N, Myers JC, Golani P, De Los Santos A, Seaton NCA, Koester SJ, Campbell SA. Growth of black arsenic phosphorus thin films and its application for field-effect transistors. NANOTECHNOLOGY 2021; 32:325601. [PMID: 33906169 DOI: 10.1088/1361-6528/abfc09] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/26/2020] [Accepted: 04/27/2021] [Indexed: 06/12/2023]
Abstract
Black arsenic phosphorus single crystals were grown using a short-way transport technique resulting in crystals up to 12 × 110μmand ranging from 200 nm to 2μmthick. The reaction conditions require tin, tin (IV) iodide, gray arsenic, and red phosphorus placed in an evacuated quartz ampule and ramped up to a maximum temperature of 630 °C. The crystal structure and elemental composition were characterized using Raman spectroscopy, x-ray diffraction, and x-ray photoelectron spectroscopy, cross-sectional transmission microscopy, and electron backscatter diffraction. The data provides valuable insight into the growth mechanism. A previously developed b-P thin film growth technique can be adapted to b-AsP film growth with slight modifications to the reaction duration and reactant mass ratios. Devices fabricated from exfoliated bulk-b-AsP grown in the same reaction condition as the thin film growth process are characterized, showing an on-off current ratio of 102, a threshold voltage of -60 V, and a peak field-effect hole mobility of 23 cm2V-1s-1atVd= -0.9 V andVg= -60 V.
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Affiliation(s)
- Nezhueyotl Izquierdo
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, United States of America
| | - Jason C Myers
- Characterization Facility, University of Minnesota, Minneapolis, United States of America
| | - Prafful Golani
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, United States of America
| | - Adonica De Los Santos
- Department of Mechanical Engineering, University of Texas Rio Grande Valley, Edinburg, United States of America
| | - Nicholas C A Seaton
- Characterization Facility, University of Minnesota, Minneapolis, United States of America
| | - Steven J Koester
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, United States of America
| | - Stephen A Campbell
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, United States of America
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10
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Self-inhibition effect of metal incorporation in nanoscaled semiconductors. Proc Natl Acad Sci U S A 2021; 118:2010642118. [PMID: 33468669 DOI: 10.1073/pnas.2010642118] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
There has been a persistent effort to understand and control the incorporation of metal impurities in semiconductors at nanoscale, as it is important for semiconductor processing from growth, doping to making contact. Previously, the injection of metal atoms into nanoscaled semiconductor, with concentrations orders of magnitude higher than the equilibrium solid solubility, has been reported, which is often deemed to be detrimental. Here our theoretical exploration reveals that this colossal injection is because gold or aluminum atoms tend to substitute Si atoms and thus are not mobile in the lattice of Si. In contrast, the interstitial atoms in the Si lattice such as manganese (Mn) are expected to quickly diffuse out conveniently. Experimentally, we confirm the self-inhibition effect of Mn incorporation in nanoscaled silicon, as no metal atoms can be found in the body of silicon (below 1017 atoms per cm-3) by careful three-dimensional atomic mappings using highly focused ultraviolet-laser-assisted atom-probe tomography. As a result of self-inhibition effect of metal incorporation, the corresponding field-effect devices demonstrate superior transport properties. This finding of self-inhibition effect provides a missing piece for understanding the metal incorporation in semiconductor at nanoscale, which is critical not only for growing nanoscale building blocks, but also for designing and processing metal-semiconductor structures and fine-tuning their properties at nanoscale.
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11
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Shi J, Clayton C, Tian B. Nano-enabled cellular engineering for bioelectric studies. NANO RESEARCH 2020; 13:1214-1227. [PMID: 34295455 PMCID: PMC8294124 DOI: 10.1007/s12274-019-2580-8] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/30/2019] [Accepted: 11/24/2019] [Indexed: 06/13/2023]
Abstract
Engineered cells have opened up a new avenue for scientists and engineers to achieve specialized biological functions. Nanomaterials, such as silicon nanowires and quantum dots, can establish tight interfaces with cells either extra- or intracellularly, and they have already been widely used to control cellular functions. The future exploration of nanomaterials in cellular engineering may reveal numerous opportunities in both fundamental bioelectric studies and clinic applications. In this review, we highlight several nanomaterials-enabled non-genetic approaches to fabricating engineered cells. First, we briefly review the latest progress in engineered or synthetic cells, such as protocells that create cell-like behaviors from nonliving building blocks, and cells made by genetic or chemical modifications. Next, we illustrate the need for non-genetic cellular engineering with semiconductors and present some examples where chemical synthesis yields complex morphology or functions needed for biointerfaces. We then provide discussions in detail about the semiconductor nanostructure-enabled neural, cardiac, and microbial modulations. We also suggest the need to integrate tissue engineering with semiconductor devices to carry out more complex functions. We end this review by providing our perspectives for future development in non-genetic cellular engineering.
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Affiliation(s)
- Jiuyun Shi
- Department of Chemistry, University of Chicago, Chicago, IL 60637, USA
| | | | - Bozhi Tian
- Department of Chemistry, University of Chicago, Chicago, IL 60637, USA
- The James Franck Institute, University of Chicago, Chicago, IL 60637, USA
- The Institute for Biophysical Dynamics, University of Chicago, Chicago, IL 60637, USA
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12
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Maliakkal CB, Mårtensson EK, Tornberg MU, Jacobsson D, Persson AR, Johansson J, Wallenberg LR, Dick KA. Independent Control of Nucleation and Layer Growth in Nanowires. ACS NANO 2020; 14:3868-3875. [PMID: 32049491 PMCID: PMC7307954 DOI: 10.1021/acsnano.9b09816] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/13/2019] [Accepted: 02/12/2020] [Indexed: 05/10/2023]
Abstract
Control of the crystallization process is central to developing nanomaterials with atomic precision to meet the demands of electronic and quantum technology applications. Semiconductor nanowires grown by the vapor-liquid-solid process are a promising material system in which the ability to form components with structure and composition not achievable in bulk is well-established. Here, we use in situ TEM imaging of Au-catalyzed GaAs nanowire growth to understand the processes by which the growth dynamics are connected to the experimental parameters. We find that two sequential steps in the crystallization process-nucleation and layer growth-can occur on similar time scales and can be controlled independently using different growth parameters. Importantly, the layer growth process contributes significantly to the growth time for all conditions and will play a major role in determining material properties such as compositional uniformity, dopant density, and impurity incorporation. The results are understood through theoretical simulations correlating the growth dynamics, liquid droplet, and experimental parameters. The key insights discussed here are not restricted to Au-catalyzed GaAs nanowire growth but can be extended to most compound nanowire growths in which the different growth species has very different solubility in the catalyst particle.
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Affiliation(s)
- Carina B. Maliakkal
- Centre
for Analysis and Synthesis, Lund University, Box 124, 22100 Lund, Sweden
- Solid
State Physics, Lund University, Box 118, 22100 Lund, Sweden
- NanoLund, Lund University, 22100 Lund, Sweden
| | - Erik K. Mårtensson
- Solid
State Physics, Lund University, Box 118, 22100 Lund, Sweden
- NanoLund, Lund University, 22100 Lund, Sweden
| | - Marcus Ulf Tornberg
- Solid
State Physics, Lund University, Box 118, 22100 Lund, Sweden
- NanoLund, Lund University, 22100 Lund, Sweden
| | - Daniel Jacobsson
- Centre
for Analysis and Synthesis, Lund University, Box 124, 22100 Lund, Sweden
- NanoLund, Lund University, 22100 Lund, Sweden
- National
Center for High Resolution Electron Microscopy, Lund University, Box 124, 22100 Lund, Sweden
| | - Axel R. Persson
- Centre
for Analysis and Synthesis, Lund University, Box 124, 22100 Lund, Sweden
- NanoLund, Lund University, 22100 Lund, Sweden
- National
Center for High Resolution Electron Microscopy, Lund University, Box 124, 22100 Lund, Sweden
| | - Jonas Johansson
- Solid
State Physics, Lund University, Box 118, 22100 Lund, Sweden
- NanoLund, Lund University, 22100 Lund, Sweden
| | - Lars Reine Wallenberg
- Centre
for Analysis and Synthesis, Lund University, Box 124, 22100 Lund, Sweden
- NanoLund, Lund University, 22100 Lund, Sweden
- National
Center for High Resolution Electron Microscopy, Lund University, Box 124, 22100 Lund, Sweden
| | - Kimberly A. Dick
- Centre
for Analysis and Synthesis, Lund University, Box 124, 22100 Lund, Sweden
- Solid
State Physics, Lund University, Box 118, 22100 Lund, Sweden
- NanoLund, Lund University, 22100 Lund, Sweden
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13
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Mohabir AT, Tutuncuoglu G, Weiss T, Vogel EM, Filler MA. Bottom-Up Masking of Si/Ge Surfaces and Nanowire Heterostructures via Surface-Initiated Polymerization and Selective Etching. ACS NANO 2020; 14:282-288. [PMID: 31854980 DOI: 10.1021/acsnano.9b04363] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The fully bottom-up and scalable synthesis of complex micro/nanoscale materials and functional devices requires masking methods to define key features and direct the deposition of various coatings and films. Here, we demonstrate selective coaxial lithography via etching of surfaces (SCALES), an enabling bottom-up process to add polymer masks to micro/nanoscale objects. SCALES is a three-step process, including (1) bottom-up synthesis of compositionally modulated structures, (2) surface-initiated polymerization of a conformal mask, and (3) selective removal of the mask only from regions whose underlying surface is susceptible to an etchant. We demonstrate the key features of and characterize the SCALES process with a series of model Si/Ge systems: Si and Ge wafers, Si and Ge nanowires, and Si/Ge heterostructure nanowires.
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Affiliation(s)
- Amar T Mohabir
- School of Chemical & Biomolecular Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 , United States
| | - Gozde Tutuncuoglu
- School of Chemical & Biomolecular Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 , United States
| | - Trent Weiss
- School of Chemical & Biomolecular Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 , United States
| | - Eric M Vogel
- School of Materials Science & Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 , United States
| | - Michael A Filler
- School of Chemical & Biomolecular Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 , United States
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14
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She G, Cai T, Mu L, Shi W. Template-free electrochemical synthesis of Cd/CdTe core/shell nanowires and CdTe nanotubes. CrystEngComm 2020. [DOI: 10.1039/d0ce00519c] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Abstract
Template-free electrodeposition was utilized to prepare Cd/CdTe nanowires and CdTe nanotubes for the first time, where the formation of one-dimensional structures was due to the highly anisotropic crystal structure and the Kirkendall effect.
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Affiliation(s)
- Guangwei She
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials
- Technical Institute of Physics and Chemistry, Chinese Academy of Sciences
- Beijing 100190
- China
| | - Tong Cai
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials
- Technical Institute of Physics and Chemistry, Chinese Academy of Sciences
- Beijing 100190
- China
- University of Chinese Academy of Sciences
| | - Lixuan Mu
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials
- Technical Institute of Physics and Chemistry, Chinese Academy of Sciences
- Beijing 100190
- China
| | - Wensheng Shi
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials
- Technical Institute of Physics and Chemistry, Chinese Academy of Sciences
- Beijing 100190
- China
- University of Chinese Academy of Sciences
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15
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In situ analysis of catalyst composition during gold catalyzed GaAs nanowire growth. Nat Commun 2019; 10:4577. [PMID: 31594930 PMCID: PMC6783420 DOI: 10.1038/s41467-019-12437-6] [Citation(s) in RCA: 22] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/22/2019] [Accepted: 09/10/2019] [Indexed: 11/16/2022] Open
Abstract
Semiconductor nanowires offer the opportunity to incorporate novel structures and functionality into electronic and optoelectronic devices. A clear understanding of the nanowire growth mechanism is essential for well-controlled growth of structures with desired properties, but the understanding is currently limited by a lack of empirical measurements of important parameters during growth, such as catalyst particle composition. However, this is difficult to accurately determine by investigating post-growth. We report direct in situ measurement of the catalyst composition during nanowire growth for the first time. We study Au-seeded GaAs nanowires inside an electron microscope as they grow and measure the catalyst composition using X-ray energy dispersive spectroscopy. The Ga content in the catalyst during growth increases with both temperature and Ga precursor flux. Semiconductor nanowires are promising materials for miniaturized devices, but a thorough understanding of their growth mechanism is necessary for controlled synthesis. Here, the authors use in situ spectroscopy and microscopy to measure the composition of the catalyst droplet as a function of different growth parameters during Au-seeded GaAs nanowire growth.
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16
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Abstract
Semiconductor nanowires have attracted extensive interest as one of the best-defined classes of nanoscale building blocks for the bottom-up assembly of functional electronic and optoelectronic devices over the past two decades. The article provides a comprehensive review of the continuing efforts in exploring semiconductor nanowires for the assembly of functional nanoscale electronics and macroelectronics. Specifically, we start with a brief overview of the synthetic control of various semiconductor nanowires and nanowire heterostructures with precisely controlled physical dimension, chemical composition, heterostructure interface, and electronic properties to define the material foundation for nanowire electronics. We then summarize a series of assembly strategies developed for creating well-ordered nanowire arrays with controlled spatial position, orientation, and density, which are essential for constructing increasingly complex electronic devices and circuits from synthetic semiconductor nanowires. Next, we review the fundamental electronic properties and various single nanowire transistor concepts. Combining the designable electronic properties and controllable assembly approaches, we then discuss a series of nanoscale devices and integrated circuits assembled from nanowire building blocks, as well as a unique design of solution-processable nanowire thin-film transistors for high-performance large-area flexible electronics. Last, we conclude with a brief perspective on the standing challenges and future opportunities.
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Affiliation(s)
- Chuancheng Jia
- Department of Chemistry and Biochemistry , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Zhaoyang Lin
- Department of Chemistry and Biochemistry , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Yu Huang
- Department of Materials Science and Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States.,California NanoSystems Institute , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry , University of California, Los Angeles , Los Angeles , California 90095 , United States.,California NanoSystems Institute , University of California, Los Angeles , Los Angeles , California 90095 , United States
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17
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Meng Y, Lan C, Li F, Yip S, Wei R, Kang X, Bu X, Dong R, Zhang H, Ho JC. Direct Vapor-Liquid-Solid Synthesis of All-Inorganic Perovskite Nanowires for High-Performance Electronics and Optoelectronics. ACS NANO 2019; 13:6060-6070. [PMID: 31067402 DOI: 10.1021/acsnano.9b02379] [Citation(s) in RCA: 38] [Impact Index Per Article: 7.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
Controlled synthesis of lead halide perovskite (LHP) nanostructures not only benefits fundamental research but also offers promise for applications. Among many synthesis techniques, although catalytic vapor-liquid-solid (VLS) growth is recognized as an effective route to achieve high-quality nanostructures, until now, there is no detailed report on VLS grown LHP nanomaterials due to the emerging challenges in perovskite synthesis. Here, we develop a direct VLS growth for single-crystalline all-inorganic lead halide perovskite ( i.e., CsPbX3; X = Cl, Br, or I) nanowires (NWs). These NWs exhibit high-performance photodetection with the responsivity exceeding 4489 A/W and detectivity over 7.9 × 1012 Jones toward the visible light regime. Field-effect transistors (FET) based on individual CsPbX3 NWs are also fabricated, where they show the superior hole mobility of up to 3.05 cm2/(V s), higher than other all-inorganic LHP devices. This work provides important guidelines for the further improvement of these perovskite nanostructures for utilizations.
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Affiliation(s)
| | - Changyong Lan
- School of Optoelectronic Science and Engineering , University of Electronic Science and Technology of China , Chengdu 610054 , P. R. China
| | | | | | | | | | | | | | | | - Johnny C Ho
- Shenzhen Research Institute , City University of Hong Kong , Shenzhen 518057 , P. R. China
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18
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Yuan W, Tutuncuoglu G, Mohabir A, Liu L, Feldman LC, Filler MA, Shan JW. Contactless Electrical and Structural Characterization of Semiconductor Nanowires with Axially Modulated Doping Profiles. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2019; 15:e1805140. [PMID: 30884159 DOI: 10.1002/smll.201805140] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/04/2018] [Revised: 02/14/2019] [Indexed: 06/09/2023]
Abstract
Efficient characterization of semiconductor nanowires having complex dopant profiles or heterostructures is critical to fully understand these materials and the devices built from them. Existing electrical characterization techniques are slow and laborious, particularly for multisegment nanowires, and impede the statistical understanding of highly variable samples. Here, it is shown that electro-orientation spectroscopy (EOS)-a high-throughput, noncontact method for statistically characterizing the electrical properties of entire nanowire ensembles-can determine the conductivity and dimensions of two distinct segments in individual Si nanowires with axially encoded dopant profiles. This analysis combines experimental measurements and computational simulations to determine the electrical conductivity of the nominally undoped segment of two-segment Si nanowires, as well as the ratio of the segment lengths. The efficacy of this approach is demonstrated by comparing results generated by EOS with conventional four-point-probe measurements. This work provides new insights into the control and variability of semiconductor nanowires for electronic applications and is a critical first step toward the high-throughput interrogation of complete nanowire-based devices.
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Affiliation(s)
- Wuhan Yuan
- Department of Mechanical & Aerospace Engineering, Rutgers University, Piscataway, NJ, 08854, USA
| | - Gozde Tutuncuoglu
- School of Chemical & Biomolecular Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Amar Mohabir
- School of Chemical & Biomolecular Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Liping Liu
- Department of Mathematics and Department of Mechanical & Aerospace Engineering, Rutgers University, Piscataway, NJ, 08854, USA
| | - Leonard C Feldman
- Department of Material Science & Engineering and Department of Physics & Astronomy, Rutgers University, Piscataway, NJ, 08854, USA
| | - Michael A Filler
- School of Chemical & Biomolecular Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Jerry W Shan
- Department of Mechanical & Aerospace Engineering, Rutgers University, Piscataway, NJ, 08854, USA
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19
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Qu J, Chen H, Khan M, Yun F, Cui X, Ringer SP, Cairney JM, Zheng R. Quantitative Determination of How Growth Conditions Affect the 3D Composition of InGaAs Nanowires. MICROSCOPY AND MICROANALYSIS : THE OFFICIAL JOURNAL OF MICROSCOPY SOCIETY OF AMERICA, MICROBEAM ANALYSIS SOCIETY, MICROSCOPICAL SOCIETY OF CANADA 2019; 25:524-531. [PMID: 30773161 DOI: 10.1017/s1431927619000114] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
Covering a broad optical spectrum, ternary InxGa1-xAs nanowires, grown by bottom-up methods, have been receiving increasing attention due to the tunability of the bandgap via In composition modulation. However, inadequate knowledge about the correlation between growth and properties restricts our ability to take advantage of this phenomenon for optoelectronic applications. Here, three different InGaAs nanowires were grown under different experimental conditions and atom probe tomography was used to quantify their composition, allowing the direct observation of the nanowire composition associated with the different growth conditions.
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Affiliation(s)
- Jiangtao Qu
- School of Physics,Camperdown, New South Wales,Australia
| | - Hansheng Chen
- School of Physics,Camperdown, New South Wales,Australia
| | - Mansoor Khan
- School of Physics,Camperdown, New South Wales,Australia
| | - Fan Yun
- School of Physics,Camperdown, New South Wales,Australia
| | - Xiangyuan Cui
- Aerospace, Mechanical and Mechatronic Engineering, the University of Sydney,2006 NSW,Australia
| | - Simon P Ringer
- Aerospace, Mechanical and Mechatronic Engineering, the University of Sydney,2006 NSW,Australia
| | - Julie M Cairney
- Aerospace, Mechanical and Mechatronic Engineering, the University of Sydney,2006 NSW,Australia
| | - Rongkun Zheng
- School of Physics,Camperdown, New South Wales,Australia
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20
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Abstract
The field of thermoelectric research has undergone a renaissance and boom in the past two and a half decades, largely fueled by the prospect of engineering electronic and phononic properties in nanostructures, among which semiconductor nanowires (NWs) have served both as an important platform to investigate fundamental thermoelectric transport phenomena and as a promising route for high thermoelectric performance for diverse applications. In this Review, we provide a comprehensive look at various aspects of thermoelectrics of NWs. We start with a brief introduction of basic thermoelectric phenomena, followed by synthetic methods for thermoelectric NWs and a summary of their thermoelectric figures of merit (ZT). We then focus our discussion on charge and heat transport, which dictate thermoelectric power factor and thermal conductivity, respectively. For charge transport, we cover the basic principles governing the power factor and then review several strategies using NWs to enhance it, including earlier theoretical and experimental work on quantum confinement effects and semimetal-to-semiconductor transition, surface engineering and complex heterostructures to enhance the carrier mobility and power factor, and the recent emergence of topological insulator NWs. For phonon transport, we broadly categorize the work on thermal conductivity of NWs into five different effects: classic size effect, acoustic softening, surface roughness, complex NW morphology, and dimensional crossover. Finally, we discuss the integration of NWs for device applications for thermoelectric power generation and cooling. We conclude our review with some outlooks for future research.
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Affiliation(s)
- Renkun Chen
- Department of Mechanical and Aerospace Engineering , The University of California-San Diego , La Jolla , California 92093 , United States
| | - Jaeho Lee
- Department of Mechanical and Aerospace Engineering , The University of California-Irvine , Irvine , California 92697 , United States
| | - Woochul Lee
- Department of Mechanical Engineering , The University of Hawaii at Manoa , Honolulu , Hawaii 96822 , United States
| | - Deyu Li
- Department of Mechanical Engineering , Vanderbilt University , Nashville , Tennessee 37235-1592 , United States
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21
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Han SY, Boebinger MG, Kondekar NP, Worthy TJ, McDowell MT. Seeded Nanowire and Microwire Growth from Lithium Alloys. NANO LETTERS 2018; 18:4331-4337. [PMID: 29860834 DOI: 10.1021/acs.nanolett.8b01334] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Although vapor-liquid-solid (VLS) growth of nanowires from alloy seed particles is common in various semiconductor systems, related wire growth in all-metal systems is rare. Here, we report the spontaneous growth of nano- and microwires from metal seed particles during the cooling of Li-rich bulk alloys containing Au, Ag, or In. The as-grown wires feature Au-, Ag-, or In-rich metal tips and LiOH shafts; the results indicate that the wires grow as Li metal and are converted to polycrystalline LiOH during and/or after growth due to exposure to H2O and O2. This new process is a simple way to create nanostructures, and the findings suggest that metal nanowire growth from alloy seeds is possible in a variety of systems.
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