Vapor Phase Growth of Semiconductor Nanowires: Key Developments and Open Questions

High Relative Humidity-Induced Growth of Perovskite Nanowires from Glass toward Single-Mode Photonic Nanolasers at Sub-100-nm Scale

Metal halide perovskites (MHPs) have achieved substantial progress in their applications; however, their ionic crystal character and low formation energy result in poor structural stability and limited morphological tunability. In particular, high relative humidity (RH) commonly causes severe MHP degradation, which poses a major obstacle to long-term device operation. Herein, high RH-induced growth of anisotropic MHP structures on glass surfaces is reported under 25 °C and atmospheric conditions on a basis of glass corrosion by moisture. Nanowires (NWs) with tunable length and composition are obtained under 85% RH air, and water molecule-induced facet engineering of perovskite is established for anisotropic growth. Importantly, single-mode photonic lasing in these MHP NWs with thickness at sub-100-nm scale (down to 75 nm ∼ 1/7 lasing wavelength) is achieved via both one-photon and multiphoton pumping. These nanowire lasers exhibited high quality factor (>3000), high degree of polarization (≈0.9), and excellent stability under laser irradiation. The work not only presents a distinctive technique for the growth of MHPs but also endows MHP NWs with new opportunities for nonlinear optics, strong light-matter interactions, and active photonic integrated devices.

Single Crystalline GeSe Van Der Waals Ribbons With Uniform Layer Stacking, High Carrier Mobility, and Adjustable Edge Morphology

Performance of the group IV monochalcogenide GeSe in solar cells, electronic, and optoelectronic devices is expected to improve when high-quality single crystalline material is used rather than polycrystalline films. Crystalline flakes represent an attractive alternative to bulk single crystals as their synthesis may be developed to be scalable, faster, and with higher overall yield. However, large - and especially large and thin - single crystal flakes are notoriously hard to synthesize. Here it is demonstrated that vapor-liquid-solid growth combined with direct lateral vapor-solid incorporation produces high-quality single crystalline GeSe ribbons with tens of micrometers size and controllable thickness. Electron microscopy shows that the ribbons exhibit perfect equilibrium (AB) van der Waals stacking order without extended defects across the entire thickness, in contrast to the conventional case of substrate-supported flakes where material is added via layer-by-layer nucleation and growth on the basal plane. Electrical measurements show anisotropic transport and a high Hall mobility of 85 cm2 V-1 s-1, on par with the best single crystals to date. Growth from mixed GeSe and SnSe vapors, finally, yields ribbons with unchanged structure and composition but with jagged edges, promising for applications that rely on ample chemically active edge sites, such as catalysis or photocatalysis.

Topotaxial mutual-exchange growth of magnetic Zintl Eu3In2As4 nanowires with axion insulator classification

Due to quasi-one-dimensional confinement, nanowires possess unique electronic properties, which can promote specific device architectures. However, nanowire growth presents paramount challenges, limiting the accessible crystal structures and elemental compositions. Here we demonstrate solid-state topotactic exchange that converts wurtzite InAs nanowires into Zintl Eu3In2As4. Molecular-beam-epitaxy-based in situ evaporation of Eu and As onto InAs nanowires results in the mutual exchange of Eu from the shell and In from the core. Therefore, a single-phase Eu3In2As4 shell grows, which gradually consumes the InAs core. The mutual exchange is supported by the substructure of the As matrix, which is similar across the wurtzite InAs and Zintl Eu3In2As4 and therefore is topotactic. The Eu3In2As4 nanowires undergo an antiferromagnetic transition at a Néel temperature of ~6.5 K. Ab initio calculations confirm the antiferromagnetic ground state and classify Eu3In2As4 as a C2T axion insulator, hosting both chiral hinge modes and unpinned Dirac surface states. The topotactic mutual-exchange nanowire growth will, thus, enable the exploration of intricate magneto-topological states in Eu3In2As4 and potentially in other exotic compounds.

Cells have the ability to break and chemically modify GaP(As) nanowires

Semiconductor nanowires are known for their unusual geometry, providing unique electronic and optical properties. Substrates with vertical nanowires have highly non-uniform surfaces, which are attractive in terms of the study of live cells that can interact and be labeled with the wires. Despite several previous works studying cells cultivated over nanowires, questions regarding cell rupture and interaction with the wires remain open. Here, we demonstrate that nanowires can not only penetrate the cell membrane, but even be broken by a cell and trapped inside it. Even after mechanical poration of the membrane manifested by the efficient transfection and delivery of a fluorescent protein encoding plasmid, the cells are found to be viable for 7 days of incubation. The endocytosed wires are then aligned along the nucleus periphery and ousted to pseudopodia with the formation of nanowire-rich fibrils as a result of complex intracellular processes. We demonstrate that endocytosis of the wires may lead to their chemical modification manifested by the red shift of the luminescence spectra. Analysis of the wires' breakdown reveals that the cells can generate forces as high as several hundreds of nN. Using this work, we demonstrate several phenomena with the potential to be used in intriguing methods for intracellular visualization and the development of biointerfaces.

Elucidating the Mechanism of Iron-Catalyzed Graphitization: The First Observation of Homogeneous Solid-State Catalysis

Carbon is a critical material for existing and emerging energy applications and there is considerable global effort in generating sustainable carbons. A particularly promising area is iron-catalyzed graphitization, which is the conversion of organic matter to graphitic carbon nanostructures by an iron catalyst. In this paper, it is reported that iron-catalyzed graphitization occurs via a new type of mechanism that is called homogeneous solid-state catalysis. Dark field in situ transmission electron microscopy is used to demonstrate that crystalline iron nanoparticles "burrow" through amorphous carbon to generate multiwalled graphitic nanotubes. The process is remarkably fast, particularly given the solid phase of the catalyst, and in situ synchrotron X-ray diffraction is used to demonstrate that graphitization is complete within a few minutes.

3D Shape Reconstruction of Ge Nanowires during Vapor-Liquid-Solid Growth under Modulating Electric Field

Bottom-up growth offers precise control over the structure and geometry of semiconductor nanowires (NWs), enabling a wide range of possible shapes and seamless heterostructures for applications in nanophotonics and electronics. The most common vapor-liquid-solid (VLS) growth method features a complex interaction between the liquid metal catalyst droplet and the anisotropic structure of the crystalline NW, and the growth is mainly orchestrated by the triple-phase line (TPL). Despite the intrinsic mismatch between the droplet and the NW symmetries, its discussion has been largely avoided because of its complexity, which has led to the situation when multiple observed phenomena such as NW axial asymmetry or the oscillating truncation at the TPL still lack detailed explanation. The introduction of an electric field control of the droplet has opened even more questions, which cannot be answered without properly addressing three-dimensional (3D) structure and morphology of the NW and the droplet. This work describes the details of electric-field-controlled VLS growth of germanium (Ge) NWs using environmental transmission electron microscopy (ETEM). We perform TEM tomography of the droplet-NW system during an unperturbed growth, then track its evolution while modulating the bias potential. Using 3D finite element method (FEM) modeling and crystallographic considerations, we provide a detailed and consistent mechanism for VLS growth, which naturally explains the observed asymmetries and features of a growing NW based on its crystal structure. Our findings provide a solid framework for the fabrication of complex 3D semiconductor nanostructures with ultimate control over their morphology.

High precision orientation mapping from 4D-STEM precession electron diffraction data through quantitative analysis of diffracted intensities

The association of scanning transmission electron microscopy (STEM) and detection of a diffraction pattern at each probe position (so-called 4D-STEM) represents one of the most promising approaches to analyze structural properties of materials with nanometric resolution and low irradiation levels. This is widely used for texture analysis of materials using automated crystal orientation mapping (ACOM). Herein, we perform orientation mapping in InP nanowires exploiting precession electron diffraction (PED) patterns acquired by an axial CMOS camera. Crystal orientation is determined at each probe position by the quantitative analysis of diffracted intensities minimizing a residue comparing experiments and simulations in analogy to x-ray structural refinement. Our simulations are based on the two-beam dynamical diffraction approximation and yield a high angular precision (∼0.03°), much lower than the traditional ACOM based on pattern matching algorithms (∼1°). We anticipate that simultaneous exploration of both spot positions and high precision crystal misorientation will allow the exploration of the whole potentiality provided by PED-based 4D-STEM for the characterization of deformation fields in nanomaterials.

Stress-induced ordering evolution of 1D segmented heteronanostructures and their chemical post-transformations

Investigations of one-dimensional segmented heteronanostructures (1D-SHs) have recently attracted much attention due to their potentials for applications resulting from their structure and synergistic effects between compositions and interfaces. Unfortunately, developing a simple, versatile and controlled synthetic method to fabricate 1D-SHs is still a challenge. Here we demonstrate a stress-induced axial ordering mechanism to describe the synthesis of 1D-SHs by a general under-stoichiometric reaction strategy. Using the continuum phase-field simulations, we elaborate a three-stage evolution process of the regular segment alternations. This strategy, accompanied by easy chemical post-transformations, enables to synthesize 25 1D-SHs, including 17 nanowire-nanowire and 8 nanowire-nanotube nanostructures with 13 elements (Ag, Te, Cu, Pt, Pb, Cd, Sb, Se, Bi, Rh, Ir, Ru, Zn) involved. This ordering evolution-driven synthesis will help to investigate the ordering reconstruction and potential applications of 1D-SHs.

Seeded growth of single-crystal black phosphorus nanoribbons

Two-dimensional materials have emerged as an important research frontier for overcoming the challenges in nanoelectronics and for exploring new physics. Among them, black phosphorus, with a combination of a tunable bandgap and high mobility, is one of the most promising systems. In particular, black phosphorus nanoribbons show excellent electrostatic gate control, which can mitigate short-channel effects in nanoscale transistors. Controlled synthesis of black phosphorus nanoribbons, however, has remained an outstanding problem. Here we report large-area growth of black phosphorus nanoribbons directly on insulating substrates. We seed the chemical vapour transport growth with black phosphorus nanoparticles and obtain uniform, single-crystal nanoribbons oriented exclusively along the [100] crystal direction. With comprehensive structural calculations, we discover that self-passivation at the zigzag edges holds the key to the preferential one-dimensional growth. Field-effect transistors based on individual nanoribbons exhibit on/off ratios up to ~104, confirming the good semiconducting behaviour of the nanoribbons. These results demonstrate the potential of black phosphorus nanoribbons for nanoelectronic devices and also provide a platform for investigating the exotic physics in black phosphorus.

Control of Ge island coalescence for the formation of nanowires on silicon

Germanium nanowires could be the building blocks of hole-spin qubit quantum computers. Selective area epitaxy enables the direct integration of Ge nanowires on a silicon chip while controlling the device design, density, and scalability. For this to become a reality, it is essential to understand and control the initial stages of the epitaxy process. In this work, we highlight the importance of surface treatment in the reactor prior to growth to achieve high crystal quality and connected Ge nanowire structures. In particular, we demonstrate that exposure to AsH3 during the high-temperature treatment enhances lateral growth of initial Ge islands and promotes faster formation of continuous Ge nanowires in trenches. The Kolmogorov-Johnson-Mehl-Avrami crystallization model supports our explanation of Ge coalescence. These results provide critical insight into the selective epitaxy of horizontal Ge nanowires on lattice-mismatched Si substrates, which can be translated to other material systems.

Solution-Processed 1D Wurtzite ZnS Nanostructures with Controlled Crystallographic Orientation and Tunable Band-Edge Emission

1D compound semiconductor nanomaterials possess unique physicochemical properties that strongly depend on their size, composition, and structures. ZnS has been widely investigated as one of the most important semiconductors, and the control of crystallographic orientation of 1D ZnS nanostructures is still challenging and crucial to exploring their anisotropic properties. Herein, a solution-processed strategy is developed to synthesize 1D wurtzite (w-)ZnS nanostructures with the specific <002> and <210> orientations by co-decomposing the copper dibutyldithiocarbamate {[(C4 H9 )2 NCS2 ]2 Cu, i.e., R2 Cu} and zinc dibutyldithiocarbamate (R2 Zn) precursors in the mixed solvents of oleylamine and 1-dodecanethoil. A solution-solid-solid (SSS)-Oriented growth mechanism is proposed, which includes oriented nucleation dominated and SSS growth dominated stages. The crystallographic orientation mainly depends on the interfacial energy and ligand effect. The 1D w-ZnS nanostructures with controlled crystallographic orientation display unique morphologies, i.e., <002>-oriented w-ZnS nanorod enclosed with {110} facets while <210>-oriented w-ZnS nanobelt enclosed with wide (002) and narrow (110) facets. The bandgap of 1D w-ZnS nanostructures can be tuned from 3.94 to 3.82 eV with the crystallographic growth direction varied from <002> to <210>, thus leading to the tunable band-edge emission from ≈338 to ≈345 nm.

A Review on 1-D Nanomaterials: Scaling-Up with Gas-Phase Synthesis

Nanowire-like materials exhibit distinctive properties comprising optical polarisation, waveguiding, and hydrophobic channelling, amongst many other useful phenomena. Such 1-D derived anisotropy can be further enhanced by arranging many similar nanowires into a coherent matrix, known as an array superstructure. Manufacture of nanowire arrays can be scaled-up considerably through judicious use of gas-phase methods. Historically, the gas-phase approach however has been extensively used for the bulk and rapid synthesis of isotropic 0-D nanomaterials such as carbon black and silica. The primary goal of this review is to document recent developments, applications, and capabilities in gas-phase synthesis methods of nanowire arrays. Secondly, we elucidate the design and use of the gas-phase synthesis approach; and finally, remaining challenges and needs are addressed to advance this field.

Growth kinetics of crumb-like structure formation on SnO2 nanowires during direct oxidation

A facile AAO (anodic aluminum oxide) template-assisted vacuum die-casting technique was used to create Sn nanowires and convert them into SnO2 without degrading the wires nanostructure. As a function of time and temperature, the controlled oxidation on the Sn nanowires of two different spatial configurations (100 and 250 nm in diameter) revealed distinct oxidation mechanisms. The 250-SnO2 nanowires exhibits a peculiar crumb-like structure formation over the surface due to the higher level of Sn atom dislocation. Conversely, the sub-100 nm SnO2 nanowires shows a highly crystalline, homogenous, and defect-free surfaces. The optical properties of the sub-100 nm SnO2 nanowires were characterized using UV-Vis spectroscopy. The heat-treated tin oxides nanowires samples at temperatures of 300, 500, and 700 °C for 7 h exhibited optical energy bandgaps of 1.8, 2.6, and 3.3 eV, respectively. The observed variation in bandgap is attributed to the unique phase compositions achieved in each of the heat-treated samples. Moreover, the obtained results showed exceptional structural integrity and optical properties that are inherently interconnected with the diverse phases achieved under precise heat treatment conditions.

Metal Oxide Nanowires Grown by a Vapor-Liquid-Solid Growth Mechanism for Resistive Gas-Sensing Applications: An Overview

Metal oxide nanowires (NWs) with a high surface area, ease of fabrication, and precise control over diameter and chemical composition are among the best candidates for the realization of resistive gas sensors. Among the different techniques used for the synthesis of materials with NW morphology, approaches based on the vapor-liquid-solid (VLS) mechanism are very popular due to the ease of synthesis, low price of starting materials, and possibility of branching. In this review article, we discuss the gas-sensing features of metal oxide NWs grown by the VLS mechanism, with emphasis on the growth conditions and sensing mechanism. The growth and sensing performance of SnO2, ZnO, In2O3, NiO, CuO, and WO3 materials with NW morphology are discussed. The effects of the catalyst type, growth temperature, and other variables on the morphology and gas-sensing performance of NWs are discussed.

From Layer-by-Layer Growth to Nanoridge Formation: Selective Area Epitaxy of GaAs by MOVPE

Selective area epitaxy at the nanoscale enables fabrication of high-quality nanostructures in regular arrays with predefined geometry. Here, we investigate the growth mechanisms of GaAs nanoridges on GaAs (100) substrates in selective area trenches by metal-organic vapor-phase epitaxy (MOVPE). It is found that pre-growth annealing results in the formation of valley-like structures of GaAs with atomic terraces inside the trenches. MOVPE growth of GaAs nanoridges consists of three distinct stages. Filling the trench in the first stage exhibits a step-flow growth behavior. Once the structure grows above the mask surface, it enters the second stage of growth by forming {101} side facets as the (100) flat top facet progressively shrinks. In the third stage, the fully formed nanoridge begins to overgrow onto the mask with a significantly reduced growth rate. We develop a kinetic model that accurately describes the width-dependent evolution of the nanoridge morphology through all three stages. MOVPE growth of fully formed nanoridges takes only about 1 min, which is 60 times faster than in our set of molecular beam epitaxy (MBE) experiments reported recently, and with a more regular, triangular cross-sectional geometry defined solely by the {101} facets. In contrast to MBE, no material loss due to Ga adatom diffusion onto the mask surface is observed in MOVPE until the third stage of growth. These results are useful for the fabrication of GaAs nanoridges of different dimensions on the same substrate for various applications and can be extended to other material systems.

In-Situ Growth of ZnO Whiskers on Ti2ZnC MAX Phases

ZnO whiskers have many applications, such as in medical and photocatalysis fields. In this study, an unconventional preparation approach is reported, realizing the in-situ growth of ZnO whiskers on Ti₂ZnC. The weak bonding between the layer of Ti₆C-octahedron and the Zn-atom layers leads to the easy extraction of Zn atoms from Ti₂ZnC lattice points, resulting in the formation of ZnO whiskers on the Ti₂ZnC surface. This is the first time that ZnO whiskers have been found to grow in-situ on Ti₂ZnC substrate. Further, this phenomenon is amplified when the size of the Ti₂ZnC grains is mechanically reduced by ball-milling, which bodes a promising route to prepare ZnO in-situ on a large scale. Additionally, this finding can also help us better understand the stability of Ti₂ZnC and the whiskering mechanism of MAX phases.

Revolutionizing Drug Delivery and Therapeutics: The Biomedical Applications of Conductive Polymers and Composites-Based Systems

The first conductive polymers (CPs) were developed during the 1970s as a unique class of organic substances with properties that are electrically and optically comparable to those of inorganic semiconductors and metals while also exhibiting the desirable traits of conventional polymers. CPs have become a subject of intensive research due to their exceptional qualities, such as high mechanical and optical properties, tunable electrical characteristics, ease of synthesis and fabrication, and higher environmental stability than traditional inorganic materials. Although conducting polymers have several limitations in their pure state, coupling with other materials helps overcome these drawbacks. Owing to the fact that various types of tissues are responsive to stimuli and electrical fields has made these smart biomaterials attractive for a range of medical and biological applications. For various applications, including the delivery of drugs, biosensors, biomedical implants, and tissue engineering, electrical CPs and composites have attracted significant interest in both research and industry. These bimodalities can be programmed to respond to both internal and external stimuli. Additionally, these smart biomaterials have the ability to deliver drugs in various concentrations and at an extensive range. This review briefly discusses the commonly used CPs, composites, and their synthesis processes. Further highlights the importance of these materials in drug delivery along with their applicability in various delivery systems.

Wafer-scale integration of GaAs/AlGaAs core-shell nanowires on silicon by the single process of self-catalyzed molecular beam epitaxy

GaAs/AlGaAs core-shell nanowires, typically having 250 nm diameter and 6 μm length, were grown on 2-inch Si wafers by the single process of molecular beam epitaxy using constituent Ga-induced self-catalysed vapor-liquid-solid growth. The growth was carried out without specific pre-treatment such as film deposition, patterning, and etching. The outermost Al-rich AlGaAs shells form a native oxide surface protection layer, which provides efficient passivation with elongated carrier lifetime. The 2-inch Si substrate sample exhibits a dark-colored feature due to the light absorption of the nanowires where the reflectance in the visible wavelengths is less than 2%. Homogeneous and optically luminescent and adsorptive GaAs-related core-shell nanowires were prepared over the wafer, showing the prospect for large-volume III-V heterostructure devices available with this approach as complementary device technologies for integration with silicon.

About the Shape of the Crystallization Front of the Semiconductor Nanowires

During the nanowire (NW) formation, the growth steps reaching the crystallization front (CF) under the catalytic drop are either absorbed by the three-phase line or accumulated in front of it, curving the surface of the front. In this paper, we have analyzed the conditions leading to a change of shape of the crystallization front of the NWs under the catalyst drop as well as the reasons for the formation of atomically smooth (singular) and curved (nonsingular) regions. A model explaining the curvature of the crystallization front under the drop in the process of NW growth is proposed. The model demonstrates that under conditions of good wettability of the crystalline surface with a catalytic liquid and nucleation at regular places of the growing NW face, a metastable equilibrium at the CF near the three-phase line is achieved due to the thermodynamic size effect of reduction of overcooling (supersaturation). This metastable equilibrium results in the curvature of the CF. The CF curvature depends on the NW radius and the level of overcooling (supersaturation) in the droplet. During this process, the low-index inclined facets adjacent to the wetting perimeter of the catalyst drop may appear on the curved CF.

Electrical and Structural Properties of Si1-xGex Nanowires Prepared from a Single-Source Precursor

Si_1-xGe_x nanowires (NWs) were prepared by gold-supported chemical vapor deposition (CVD) using a single-source precursor with preformed Si-Ge bonds. Besides the tamed reactivity of the precursor, the approach reduces the process parameters associated with the control of decomposition characteristics and the dosing of individual precursors. The group IV alloy NWs are single crystalline with a constant diameter along their axis. During the wire growth by low pressure CVD, an Au-containing surface layer on the NWs forms by surface diffusion from the substrate, which can be removed by a combination of oxidation and etching. The electrical properties of the Si_1-xGe_x/Au core-shell NWs are compared to the Si_1-xGe_x NWs after Au removal. Core-shell NWs show signatures of metal-like behavior, while the purely semiconducting NWs reveal typical signatures of intrinsic Si_1-xGe_x. The synthesized materials should be of high interest for applications in nano- and quantum-electronics.

Metal Halide Perovskite Nanowires: Controllable Synthesis, Mechanism, and Application in Optoelectronic Devices

Metal halide perovskites are promising energy materials because of their high absorption coefficients, long carrier lifetimes, strong photoluminescence, and low cost. Low-dimensional halide perovskites, especially one-dimensional (1D) halide perovskite nanowires (NWs), have become a hot research topic in optoelectronics owing to their excellent optoelectronic properties. Herein, we review the synthetic strategies and mechanisms of halide perovskite NWs in recent years, such as hot injection, vapor phase growth, selfassembly, and solvothermal synthesis. Furthermore, we summarize their applications in optoelectronics, including lasers, photodetectors, and solar cells. Finally, we propose possible perspectives for the development of halide perovskite NWs.

Ultrafast synthesis of SiC nanowire webs by floating catalysts rationalised through in situ measurements and thermodynamic calculations

This work presents the synthesis of SiC nanowires floating in a gas stream through the vapour-liquid-solid (VLS) mechanism using an aerosol of catalyst nanoparticles. These conditions lead to ultrafast growth at 8.5 μm s^-1 (maximum of 50 μm s^-1), which is up to 3 orders of magnitude above conventional substrate-based chemical vapour deposition. The high aspect ratio of the nanowires (up to 2200) favours their entanglement and the formation of freestanding network materials consisting entirely of SiCNWs. The floating catalyst chemical vapour deposition growth process is rationalised through in situ sampling of reaction products and catalyst aerosol from the gas phase, and thermodynamic calculations of the bulk ternary Si-C-Fe phase diagram. The phase diagram suggests a description of the mechanistic path for the selective growth of SiCNWs, consistent with the observation that no other types of nanowires (Si or C) are grown by the catalyst. SiCNW growth occurs at 1130 °C, close to the calculated eutectic. According to the calculated phase diagram, upon addition of Si and C, the Fe-rich liquid segregates a carbon shell, and later enrichment of the liquid in Si leads to the formation of SiC. The exceptionally fast growth rate relative to substrate-based processes is attributed to the increased availability of precursors for incorporation into the catalyst due to the high collision rate inherent to this new synthesis mode.

Submicron-Size Emitters of the 1.2-1.55 μm Spectral Range Based on InP/InAsP/InP Nanostructures Integrated into Si Substrate

We study photoluminescence of InP/InAsP/InP nanostructures monolithically integrated to a Si(100) substrate. The InP/InAsP/InP nanostructures were grown in pre-formed pits in the silicon substrate using an original approach based on selective area growth and driven by a molten alloy in metal-organic vapor epitaxy method. This approach provides the selective-area synthesis of the ordered emitters arrays on Si substrates. The obtained InP/InAsP/InP nanostructures have a submicron size. The individual InP/InAsP/InP nanostructures were investigated by photoluminescence spectroscopy at room temperature. The tuning of the emission line in the spectral range from 1200 nm to 1550 nm was obtained depending on the growth parameters. These results provide a path for the growth on Si(100) substrate of position-controlled heterojunctions based on InAs_1-xP_x for nanoscale optical devices operating at the telecom band.

Low-Dimensional Organic Crystals: From Precise Synthesis to Advanced Applications

Low-dimensional organic crystals (LOCs) have attracted increasing attention recently for their potential applications in miniaturized optoelectronics and integrated photonics. Such applications are possible owing to their tunable physicochemical properties and excellent charge/photon transport features. As a result, the precise synthesis of LOCs has been examined in terms of morphology modulation, large-area pattern arrays, and complex architectures, and this has led to a series of appealing structure-dependent properties for future optoelectronic applications. This review summarizes the recent advances in the precise synthesis of LOCs in addition to discussing their structure-property relationships in the context of optoelectronic applications. It also presents the current challenges related to organic crystals with specific structures and desired performances, and the outlook regarding their use in next-generation integrated optoelectronic applications.

Selective area epitaxy of GaAs: the unintuitive role of feature size and pitch

Selective area epitaxy (SAE) provides the path for scalable fabrication of semiconductor nanostructures in a device-compatible configuration. In the current paradigm, SAE is understood as localized epitaxy, and is modelled by combining planar and self-assembled nanowire growth mechanisms. Here we use GaAs SAE as a model system to provide a different perspective. First, we provide evidence of the significant impact of the annealing stage in the calculation of the growth rates. Then, by elucidating the effect of geometrical constraints on the growth of the semiconductor crystal, we demonstrate the role of adatom desorption and resorption beyond the direct-impingement and diffusion-limited regime. Our theoretical model explains the effect of these constraints on the growth, and in particular why the SAE growth rate is highly sensitive to the pattern geometry. Finally, the disagreement of the model at the largest pitch points to non-negligible multiple adatom recycling between patterned features. Overall, our findings point out the importance of considering adatom diffusion, adsorption and desorption dynamics in designing the SAE pattern to create pre-determined nanoscale structures across a wafer. These results are fundamental for the SAE process to become viable in the semiconductor industry.

Colloidal Synthesis of γ-MnS Nanorods with Uniform Controlled Size and Pure ⟨002⟩ Growth Direction

One dimensional (1D) compound semiconductor nanostructures have unique anisotropic optical, electrical, and physical properties. Synthesis of large scale 1D nanostructures with pure crystallographic growth direction by a colloidal route and finding an easy method to prove it were significant for further exploring their unique anisotropic properties. Additionally, MnS is one of the most important optoelectronic and magnetic semiconductors. Herein, the large scale γ-MnS nanorods with completely pure ⟨002⟩ growth direction were first synthesized and convinced by solid evidence using the X-ray diffraction method. Compared with the standard diffraction pattern of γ-MnS powder, the ⟨002⟩ oriented long γ-MnS nanorods showed only the (100),(110), (200), and (210) peaks while other diffraction peaks disappeared. This study opened a door for the synthesis of the 1D colloidal nanostructures with pure crystallographic growth direction at large scale, benefiting the manufacture of a novel apparatus based on their anisotropic properties.

Nanosensor Based on Thermal Gradient and Machine Learning for the Detection of Methanol Adulteration in Alcoholic Beverages and Methanol Poisoning

Methanol, naturally present in small quantities in the distillation of alcoholic beverages, can lead to serious health problems. When it exceeds a certain concentration, it causes blindness, organ failure, and even death if not recognized in time. Analytical techniques such as chromatography are used to detect dangerous concentrations of methanol, which are very accurate but also expensive, cumbersome, and time-consuming. Therefore, a gas sensor that is inexpensive and portable and capable of distinguishing methanol from ethanol would be very useful. Here, we present a resistive gas sensor, based on tin oxide nanowires, that works in a thermal gradient. By combining responses at various temperatures and using machine learning algorithms (PCA, SVM, LDA), the device can distinguish methanol from ethanol in a wide range of concentrations (1–100 ppm) in both dry air and under different humidity conditions (25–75% RH). The proposed sensor, which is small and inexpensive, demonstrates the ability to distinguish methanol from ethanol at different concentrations and could be developed both to detect the adulteration of alcoholic beverages and to quickly recognize methanol poisoning.

Polarization Control in Integrated Silicon Waveguides Using Semiconductor Nanowires

In this work, we show the design of a silicon photonic-based polarization converting device based on the integration of semiconduction InP nanowires on the silicon photonic platform. We present a comprehensive numerical analysis showing that full polarization conversion (from quasi-TE modes to quasi-TM modes, and vice versa) can be achieved in devices exhibiting small footprints (total device lengths below 20 µm) with minimal power loss (<2 dB). The approach described in this work can pave the way to the realization of complex and re-configurable photonic processors based on the manipulation of the state of polarization of guided light beams.

MOCVD Growth and Structural Properties of ZnS Nanowires: A Case Study of Polytypism

Controlling the morphology, orientation, and crystal phase of semiconductor nanowires is crucial for their future applications in nanodevices. In this work, zinc sulfide (ZnS) nanowires have been grown by metalorganic chemical vapor deposition (MOCVD), using gold or gold-gallium alloys as catalyst. At first, basic studies on MOCVD growth regimes (mass-transport, zinc- or sulfur- rich conditions) have been carried out for ZnS thin films. Subsequently, the growth of ZnS nanowires was investigated, as a function of key parameters such as substrate temperature, S/Zn ratio, physical state and composition of the catalyst droplet, and supersaturation. A detailed analysis of the structural properties by transmission electron microscopy (TEM) is given. Depending on the growth conditions, a variety of polytypes is observed: zinc-blende (3C), wurtzite (2H) as well as an uncommon 15R crystal phase. It is demonstrated that twinning superlattices, i.e., 3C structures with periodic twin defects, can be achieved by increasing the Ga concentration of the catalyst. These experimental results are discussed in the light of growth mechanisms reported for semiconductor nanowires. Hence, in this work, the control of ZnS nanowire structural properties appears as a case study for the better understanding of polytypism in semiconductor 1D nanostructures.

Lattice-mismatch-free growth of organic heterostructure nanowires from cocrystals to alloys

Organic heterostructure nanowires, such as multiblock, core/shell, branch-like and related compounds, have attracted chemists’ extensive attention because of their novel physicochemical properties. However, owing to the difficulty in solving the lattice mismatch of distinct molecules, the construction of organic heterostructures at large scale remains challenging, which restricts its wide use in future applications. In this work, we define a concept of lattice-mismatch-free for hierarchical self-assembly of organic semiconductor molecules, allowing for the large-scale synthesis of organic heterostructure nanowires composed of the organic alloys and cocrystals. Thus, various types of organic triblock nanowires are prepared in large scale, and the length ratio of different segments of the triblock nanowires can be precisely regulated by changing the stoichiometric ratio of different components. These results pave the way towards fine synthesis of heterostructures in a large scale and facilitate their applications in organic optoelectronics at micro/nanoscale.

The large-scale synthesis of organic heterostructure nanowires is challenging. Here, the authors report the synthesis of organic triblock nanowires via a lattice mismatch-free strategy.

Nanoscale Growth Initiation as a Pathway to Improve the Earth-Abundant Absorber Zinc Phosphide

Growth approaches that limit the interface area between layers to nanoscale regions are emerging as a promising pathway to limit the interface defect formation due to mismatching lattice parameters or thermal expansion coefficient. Interfacial defect mitigation is of great interest in photovoltaics as it opens up more material combinations for use in devices. Herein, an overview of the vapor-liquid-solid and selective area epitaxy growth approaches applied to zinc phosphide (Zn3P2), an earth-abundant absorber material, is presented. First, we show how different morphologies, including nanowires, nanopyramids, and thin films, can be achieved by tuning the growth conditions and growth mechanisms. The growth conditions are also shown to greatly impact the defect structure and composition of the grown material, which can vary considerably from the ideal stoichiometry (Zn3P2). Finally, the functional properties are characterized. The direct band gap could accurately be determined at 1.50 ± 0.1 eV, and through complementary density functional theory calculations, we can identify a range of higher-order band gap transitions observed through valence electron energy loss spectroscopy and cathodoluminescence. Furthermore, we outline the formation of rotated domains inside of the material, which are a potential origin of defect transitions that have been long observed in zinc phosphide but not yet explained. The basic understanding provided reinvigorates the potential use of earth-abundant II-V semiconductors in photovoltaic technology. Moreover, the transferrable nanoscale growth approaches have the potential to be applied to other material systems, as they mitigate the constraints of substrate-material combinations causing interface defects.

Tuning nanowire lasers via hybridization with two-dimensional materials

Mixed-dimensional hybrid structures have recently gained increasing attention as promising building blocks for novel electronic and optoelectronic devices. In this context, hybridization of semiconductor nanowires with two-dimensional materials could offer new ways to control and modulate lasing at the nanoscale. In this work, we deterministically fabricate hybrid mixed-dimensional heterostructures composed of ZnO nanowires and MoS₂ monolayers with micrometer control over their relative position. First, we show that our deterministic fabrication method does not degrade the optical properties of the ZnO nanowires. Second, we demonstrate that the lasing wavelength of ZnO nanowires can be tuned by several nanometers by hybridization with CVD-grown MoS₂ monolayers. We assign this spectral shift of the lasing modes to an efficient carrier transfer at the heterointerface and the subsequent increase of the optical band gap in ZnO (Moss-Burstein effect).

Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for Dual Light-Emitting Devices

III-V semiconductors outperform Si in many optoelectronics applications due to their high carrier mobility, efficient light emission and absorption processes, and the possibility to engineer their band gap through alloying. However, complementing Si technology with III-V semiconductors by integration on Si(100) remains a challenge still today. Vertical nanospades (NSPDs) are quasi-bi-crystal III-V nanostructures that grow on Si(100). Here, we showcase the potential of these structures in optoelectronics application by demonstrating InGaAs heterostructures on GaAs NSPDs that exhibit bright emission in the near-infrared region. Using cathodoluminescence hyperspectral imaging, we are able to study light emission properties at a few nanometers of spatial resolution, well below the optical diffraction limit. We observe a symmetric spatial luminescence splitting throughout the NSPD. We correlate this characteristic to the structure's crystal nature, thus opening new perspectives for dual wavelength light-emitting diode structures. This work paves the path for integrating optically active III-V structures on the Si(100) platform.

α-BaF2 Nanoparticle Substrate-Enabled γ-CsPbI3 Heteroepitaxial Growth for Efficient and Bright Deep-Red Light-Emitting Diodes

All-inorganic CsPbI₃ perovskite is attractive for deep-red light-emitting diodes (LEDs) because of its excellent carrier mobility, high color purity, and solution processability. However, the high phase transition energy barrier of optically active CsPbI₃ black phase hinders the fabrication of efficient and bright LEDs. Here, we report a novel α-BaF₂ nanoparticle substrate-promoted solution-processable heteroepitaxial growth to overcome this hindrance and obtain high-quality optically active γ-CsPbI₃ thin films, achieving efficient and bright deep-red LEDs. We unravel that the highly exposed planes on the α-BaF₂ nanoparticle-based heteroepitaxial growth substrate have a 99.5% lattice matching degree with the (110) planes of γ-CsPbI₃. This ultrahigh lattice matching degree initiates solution-processed interfacial strain-free epitaxial growth of low-defect and highly oriented γ-CsPbI₃ thin films on the substrate. The obtained γ-CsPbI₃ thin films are uniform, smooth, and highly luminescent, based on which we fabricate efficient and bright deep-red LEDs with a high peak external quantum efficiency of 14.1% and a record luminance of 1325 cd m^-2.

Particle swarm optimization of GaAs-AlGaAS nanowire photonic crystals as two-dimensional diffraction gratings for light trapping

Semiconductor nanowire ordered arrays represent a class of bi-dimensional photonic crystals that can be engineered to obtain functional metamaterials. Here is proposed a novel approach, based on a particle swarm optimization algorithm, for using such a photonic crystal concept to design a semiconductor nanowire-based two-dimensional diffraction grating able to guarantee an in-plane coupling for light trapping. The method takes into account the experimental constraints associated to the bottom-up growth of nanowire arrays, by processing as input dataset all relevant geometrical and morphological features of the array, and returns as output the optimised set of parameters according to the desired electromagnetic functionality of the metamaterial. A case of study based on an array of tapered GaAs-AlGaAs core-shell nanowire heterostructures is discussed.

Review on 3D growth engineering and integration of nanowires for advanced nanoelectronics and sensor applications

Recent years have witnessed increasing efforts devoted to the growth, assembly and integration of quasi-one dimensional (1D) nanowires (NWs), as fundamental building blocks in advanced three-dimensional (3D) architecture, to explore a series of novel nanoelectronic and sensor applications. An important motivation behind is to boost the integration density of the electronic devices by stacking more functional units in theout-of-plane z-direction, where the NWs are supposed to be patterned or grown as vertically standing or laterally stacked channels to minimize their footprint area. The other driving force is derived from the unique possibility of engineering the 1D NWs into more complex, as well as more functional, 3D nanostructures, such as helical springs and kinked probes, which are ideal nanostructures for developping advanced nanoelectromechanical system (NEMS), bio-sensing and manipulation applications. This Review will first examine the recent progresses made in the construction of 3D nano electronic devices, as well as the new fabrication and growth technologies established to enable an efficient 3D integration of the vertically standing or laterally stacked NW channels. Then, the different approaches to produce and tailor more sophisticated 3D helical springs or purposely-designed nanoprobes will be revisited, together with their applications in NEMS resonators, bio sensors and stimulators in neural system.

GaAs nanowires on Si nanopillars: towards large scale, phase-engineered arrays

Large-scale patterning for vapor-liquid-solid growth of III-V nanowires is a challenge given the required feature size for patterning (45 to 60 nm holes). In fact, arrays are traditionally manufactured using electron-beam lithography,for which processing times increase greatly when expanding the exposure area. In order to bring nanowire arrays one step closer to the wafer-scale we take a different approach and replace patterned nanoscale holes with Si nanopillar arrays. The method is compatible with photolithography methods such as phase-shift lithography or deep ultraviolet (DUV) stepper lithography. We provide clear evidence on the advantage of using nanopillars as opposed to nanoscale holes both for the control on the growth mechanisms and for the scalability. We identify the engineering of the contact angle as the key parameter to optimize the yield. In particular, we demonstrate how nanopillar oxidation is key to stabilize the Ga catalyst droplet and engineer the contact angle. We demonstrate how the position of the triple phase line at the SiO₂/Si as opposed to the SiO₂/vacuum interface is central for a successful growth. We compare our experiments with simulations performed in surface evolver™ and observe a strong correlation. Large-scale arrays using phase-shift lithography result in a maximum local vertical yield of 67% and a global chip-scale yield of 40%. We believe that, through a greater control over key processing steps typically achieved in a semiconductor fab it is possible to push this yield to 90+% and open perspectives for deterministic nanowire phase engineering at the wafer-scale.

Controlling reaction paths for ultra-fast growth of inorganic nanowires floating in the gas phase

Synthesis of inorganic nanowires/nanotubes suspended in the gas through floating catalyst chemical vapour deposition (FCCVD) produces exceptional growth rates of 5-1000 micron per second, several orders of magnitude faster than conventional substrate processes. It leads to nanowire lengths >100 microns and thus to the possibility of direct assembly into freestanding macroscopic networks as a continuous process. This work studies the different reaction paths controlling conversion and selectivity in FCCVD applied to the synthesis of silicon nanowires (SiNWs) from silane, grown through an aerosol of gold catalyst nanoparticles. There are two main competing reactions: catalysed growth of SiNWs and non-catalysed formation of amorphous Si nanoparticles. The mass fraction of the two populations can be precisely determined by XRD and Raman spectroscopy, enabling high-throughput screening of reaction parameter space. The experimental data and accompanying analytical model show that selectivity is kinetically controlled by the ratio of precursor/hydrogen carrier gas, through its inhibition of the pyrolisis of silane into silylene. In contrast, the rate of SiNW growth is largely unaffected by hydrogen and not limited by precursor availability. These results provide a framework to describe the kinetics of nanomaterials growth by FCCVD.

Post-nucleation evolution of the liquid-solid interface in nanowire growth

We study usingin situtransmission electron microscopy the birth of GaAs nanowires from liquid Au-Ga catalysts on amorphous substrates. Lattice-resolved observations of the starting stages of growth are reported here for the first time. It reveals how the initial nanostructure evolves into a nanowire growing in a zincblende 〈111〉 or the equivalent wurtzite〈0001〉 direction. This growth direction(s) is what is typically observed in most III-V and II-VI nanowires. However, the reason for this preferential nanowire growth along this direction is still a dilemma. Based on the videos recorded shortly after the nucleation of nanowires, we argue that the lower catalyst droplet-nanowire interface energy of the {111} facet when zincblende (or the equivalent {0001} facet in wurtzite) is the reason for this direction selectivity in nanowires.

Epitaxially Integrated Hierarchical ZnO/Au/SrTiO3 and ZnO/Ag/Al2O3 Heterostructures: Three-Dimensional Plasmo-Photonic Nanoarchitecturing

In this study, we fabricated three-dimensional (3D) hierarchical plasmo-photonic nanoarchitectures by epitaxially integrating semiconducting zinc oxide (ZnO) nanowires with vertically oriented plasmonic gold (Au) and silver (Ag) nanoplatforms and investigated their growth mechanisms in detail. We synthesized 3D hierarchical Au–ZnO nanostructures via a vapor–solid mechanism leading to the epitaxial growth of ZnO nanowires on vertically oriented single-crystalline Au nanowires on a strontium titanate (SrTiO₃) substrate. The elongated half-octahedral Au nanowires with a rhombus cross-section were transformed into thermodynamically stable elongated cuboctahedral Au nanowires with a hexagonal cross-section during the reaction. After the transformation, ZnO thin films with six twinned domains were formed on the side planes of the elongated cuboctahedral Au nanowire trunks, and six ZnO nanowire branches were grown on the ZnO thin films. Further, 3D hierarchical Ag–ZnO nanostructures were obtained via the same vapor–solid mechanism leading to the epitaxial growth of ZnO nanowires on vertically oriented Ag nanoplates on an aluminum oxide (Al₂O₃) substrate. Therefore, the growth mechanism developed herein can be generally employed to fabricate 3D hierarchical plasmo-photonic nanoarchitectures.

Rotated domains in selective area epitaxy grown Zn3P2: formation mechanism and functionality

Zinc phosphide (Zn3P2) is an ideal absorber candidate for solar cells thanks to its direct bandgap, earth-abundance, and optoelectronic characteristics, albeit it has been insufficiently investigated due to limitations in the fabrication of high-quality material. It is possible to overcome these factors by obtaining the material as nanostructures, e.g. via the selective area epitaxy approach, enabling additional strain relaxation mechanisms and minimizing the interface area. We demonstrate that Zn3P2 nanowires grow mostly defect-free when growth is oriented along the [100] and [110] of the crystal, which is obtained in nanoscale openings along the [110] and [010] on InP(100). We detect the presence of two stable rotated crystal domains that coexist in the structure. They are due to a change in the growth facet, which originates either from the island formation and merging in the initial stages of growth or lateral overgrowth. These domains have been visualized through 3D atomic models and confirmed with image simulations of the atomic scale electron micrographs. Density functional theory simulations describe the rotated domains' formation mechanism and demonstrate their lattice-matched epitaxial relation. In addition, the energies of the shallow states predicted closely agree with transition energies observed by experimental studies and offer a potential origin for these defect transitions. Our study represents an important step forward in the understanding of Zn3P2 and thus for the realisation of solar cells to respond to the present call for sustainable photovoltaic technology.

Recent trends in the applications of thermally expanded graphite for energy storage and sensors - a review

Carbon nanomaterials such as carbon dots (0D), carbon nanotubes (1D), graphene (2D), and graphite (3D) have been exploited as electrode materials for various applications because of their high active surface area, thermal conductivity, high chemical stability and easy availability. In addition, due to the strong affinity between carbon nanomaterials and various catalysts, they can easily form metal carbides (examples: ionic, covalent, interstitial and intermediate transition metal carbides) and also help in the stable dispersion of catalysts on the surface of carbon nanomaterials. Thermally expanded graphite (TEG) is a vermicular-structured carbon material that can be prepared by heating expandable graphite up to 1150 °C using a muffle or tubular furnace. At high temperatures, the thermal expansion of graphite occurred by the intercalation of ions (examples: SO4 2-, NO3 -, Li+, Na+, K+, etc.) and oxidizing agents (examples: ammonium persulfate, H2O2, potassium nitrate, potassium dichromate, potassium permanganate, etc.) which helped in the exfoliation process. Finally, the obtained TEG, an intumescent form of graphite, has been used in the preparation of composite materials with various conducting polymers (examples: epoxy, poly(styrene-co-acrylonitrile), polyaniline, etc.) and metal chlorides (examples: FeCl3, CuCl2, and ZnCl2) for hydrogen storage, thermal energy storage, fuel cells, batteries, supercapacitors, sensors, etc. The main features of TEG include a highly porous structure, very lightweight with an apparent density (0.002-0.02 g cm-3), high mechanical properties (10 MPa), thermal conductivity (25-470 W m-1 K-1), high electrical conductivity (106-108 S cm-1) and low-cost. The porosity and expansion ratio of graphite layers could be customized by controlling the temperature and selection of intercalation ions according to the demand. Recently, TEG based composites prepared with metal oxides, chlorides and polymers have been demonstrated for their use in energy production, energy storage, and electrochemical (bio-) sensors (examples: urea, organic pollutants, Cd2+, Pb2+, etc.). In this review, we have highlighted and summarized the recent developments in TEG-based composites and their potential applications in energy storage, fuel cells and sensors with hand-picked examples.

Chemical Vapor Transport Route toward Black Phosphorus Nanobelts and Nanoribbons

Chemical vapor transport (CVT) method is widely used for bulk black phosphorus (BP) fabrication. In this work, we demonstrate that CVT provides a route for the fabrication of BP nanoribbons and nanobelts. This method consists of a two-step procedure, including initial BP column growth using the CVT technique, followed by ultrasonic treatment and centrifugation. The obtained nanostructures preserve BP column dimensions, forming ultralong ribbon-like structures with the length to the width aspect ratio of up to 500. Computational modeling of the growth mechanism of a BP flake is also presented in support of the observed columnar growth. Calculation of the average energy of the molecule in the asymmetric flakes shows that the growth of the structure in the zigzag direction is more energetically favorable than in the armchair direction.

Surface Nano-Patterning for the Bottom-Up Growth of III-V Semiconductor Nanowire Ordered Arrays

Ordered arrays of vertically aligned semiconductor nanowires are regarded as promising candidates for the realization of all-dielectric metamaterials, artificial electromagnetic materials, whose properties can be engineered to enable new functions and enhanced device performances with respect to naturally existing materials. In this review we account for the recent progresses in substrate nanopatterning methods, strategies and approaches that overall constitute the preliminary step towards the bottom-up growth of arrays of vertically aligned semiconductor nanowires with a controlled location, size and morphology of each nanowire. While we focus specifically on III-V semiconductor nanowires, several concepts, mechanisms and conclusions reported in the manuscript can be invoked and are valid also for different nanowire materials.

Tailoring Morphology and Vertical Yield of Self-Catalyzed GaP Nanowires on Template-Free Si Substrates

Tailorable synthesis of III-V semiconductor heterostructures in nanowires (NWs) enables new approaches with respect to designing photonic and electronic devices at the nanoscale. We present a comprehensive study of highly controllable self-catalyzed growth of gallium phosphide (GaP) NWs on template-free silicon (111) substrates by molecular beam epitaxy. We report the approach to form the silicon oxide layer, which reproducibly provides a high yield of vertical GaP NWs and control over the NW surface density without a pre-patterned growth mask. Above that, we present the strategy for controlling both GaP NW length and diameter independently in single- or two-staged self-catalyzed growth. The proposed approach can be extended to other III-V NWs.

Oriented Halide Perovskite Nanostructures and Thin Films for Optoelectronics

Oriented semiconductor nanostructures and thin films exhibit many advantageous properties, such as directional exciton transport, efficient charge transfer and separation, and optical anisotropy, and hence these nanostructures are highly promising for use in optoelectronics and photonics. The controlled growth of these structures can facilitate device integration to improve optoelectronic performance and benefit in-depth fundamental studies of the physical properties of these materials. Halide perovskites have emerged as a new family of promising and cost-effective semiconductor materials for next-generation high-power conversion efficiency photovoltaics and for versatile high-performance optoelectronics, such as light-emitting diodes, lasers, photodetectors, and high-energy radiation imaging and detectors. In this Review, we summarize the advances in the fabrication of halide perovskite nanostructures and thin films with controlled dimensionality and crystallographic orientation, along with their applications and performance characteristics in optoelectronics. We examine the growth methods, mechanisms, and fabrication strategies for several technologically relevant structures, including nanowires, nanoplates, nanostructure arrays, single-crystal thin films, and highly oriented thin films. We highlight and discuss the advantageous photophysical properties and remarkable performance characteristics of oriented nanostructures and thin films for optoelectronics. Finally, we survey the remaining challenges and provide a perspective regarding the opportunities for further progress in this field.

Prismatic Ge-rich inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires by controlled faceting

Formation of Ge-rich prismatic inclusions in the hexagonal SiGe shell of GaP-Si-SiGe nanowires is reported and discussed in relation to a growth model that explains their origin. An accurate TEM/EDX analysis shows that such prisms develop right on top of any {112[combining macron]0} facet present on the inner GaP-Si surface, with the base matching the whole facet extension, as large as tens of nanometers, and extending within the SiGe shell up to a thickness of comparable size. An enrichment in Ge by around 5% is recognized within such regions. A phase-field growth model, tackling both the morphological and compositional evolution of the SiGe shell during growth, is exploited to assess the mechanism behind the prism formation. A kinetic segregation process, stemming from the difference in surface mobility between Ge (faster) and Si (slower), is shown to take place, in combination with the evolution of the SiGe shell morphology. Actually, the latter moves from the one templated by the underlying GaP-Si core, including both {101[combining macron]0} and {112[combining macron]0} facets, to the more energetically convenient hexagon, bounded by {101[combining macron]0} facets only. Simulations are shown to accurately reproduce the experimental observations for both regular and asymmetric nanowires. It is then discussed how a careful control of the GaP core faceting, as well as a proper modulation of the shell growth rate, allows for direct control of the appearance and size of the Ge-rich prisms. This tunability paves the way for a possible exploitation of these lower-gap regions for advanced designs of band-gap-engineering.

Semiconductor nanowire arrays for optical sensing: a numerical insight on the impact of array periodicity and density

Recent advances in the nanofabrication and modeling of metasurfaces have shown the potential of these systems in providing unprecedented control over light-matter interactions at the nanoscale, enabling immediate and tangible improvement of features and specifications of photonic devices that are becoming always more crucial in enhancing everyday life quality. In this work, we theoretically demonstrate that metasurfaces made of periodic and non-periodic deterministic assemblies of vertically aligned semiconductor nanowires can be engineered to display a tailored effective optical response and provide a suitable route to realize advanced systems with controlled photonic properties particularly interesting for sensing applications. The metasurfaces investigated in this paper correspond to nanowire arrays that can be experimentally realized exploiting nanolithography and bottom-up nanowire growth methods: the combination of these techniques allow to finely control the position and the physical properties of each individual nanowire in complex arrays. By resorting to numerical simulations, we address the near- and far-field behavior of a nanowire ensemble and we show that the controlled design and arrangement of the nanowires on the substrate may introduce unprecedented oscillations of light reflectance, yielding a metasurface which displays an electromagnetic behavior with great potential for sensing. Finite-difference time-domain numerical simulations are carried out to tailor the nanostructure parameters and systematically engineer the optical response in the VIS-NIR spectral range. By exploiting our computational-methods we set-up a complete procedure to design and test metasurfaces able to behave as functional sensors. These results are especially encouraging in the perspective of developing arrays of epitaxially grown semiconductor nanowires, where the suggested design can be easily implemented during the nanostructure growth, opening the way to fully engineered nanowire-based optical metamaterials.

One-Dimensional (1D) Nanostructured Materials for Energy Applications

At present, the world is at the peak of production of traditional fossil fuels. Much of the resources that humanity has been consuming (oil, coal, and natural gas) are coming to an end. The human being faces a future that must necessarily go through a paradigm shift, which includes a progressive movement towards increasingly less polluting and energetically viable resources. In this sense, nanotechnology has a transcendental role in this change. For decades, new materials capable of being used in energy processes have been synthesized, which undoubtedly will be the cornerstone of the future development of the planet. In this review, we report on the current progress in the synthesis and use of one-dimensional (1D) nanostructured materials (specifically nanowires, nanofibers, nanotubes, and nanorods), with compositions based on oxides, nitrides, or metals, for applications related to energy. Due to its extraordinary surface-volume relationship, tunable thermal and transport properties, and its high surface area, these 1D nanostructures have become fundamental elements for the development of energy processes. The most relevant 1D nanomaterials, their different synthesis procedures, and useful methods for assembling 1D nanostructures in functional devices will be presented. Applications in relevant topics such as optoelectronic and photochemical devices, hydrogen production, or energy storage, among others, will be discussed. The present review concludes with a forecast on the directions towards which future research could be directed on this class of nanostructured materials.