1
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Droseros N, Ferdowsi P, Martinez EO, Saliba M, Banerji N, Tsokkou D. Excited-State Dynamics of MAPbBr 3: Coexistence of Excitons and Free Charge Carriers at Ultrafast Times. THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2024; 128:8637-8648. [PMID: 38835933 PMCID: PMC11145650 DOI: 10.1021/acs.jpcc.3c08509] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/31/2023] [Revised: 02/20/2024] [Accepted: 03/25/2024] [Indexed: 06/06/2024]
Abstract
Methylammonium lead tribromide perovskite (MAPbBr3) is an important material, for example, for light-emitting applications and tandem solar cells. The relevant photophysical properties are governed by a plethora of phenomena resulting from the complex and relatively poorly understood interplay of excitons and free charge carriers in the excited state. In this study, we combine transient spectroscopies in the visible and terahertz range to investigate the presence and evolution of excitons and free charge carriers at ultrafast times upon excitation at various photon energies and densities. For above- and resonant band-gap excitation, we find that free charges and excitons coexist and that both are mainly promptly generated within our 50-100 fs experimental time resolution. However, the exciton-to-free charge ratio increases upon decreasing the phonon energy toward resonant band gap excitation. The free charge signatures dominate the transient absorption response for above-band-gap excitation and low excitation densities, masking the excitonic features. With resonant band gap excitation and low excitation densities, we find that although the exciton density increases, free charges remain. We show evidence that the excitons localize into shallow trap and/or Urbach tail states to form localized excitons (within tens of picoseconds) that subsequently get detrapped. Using high excitation densities, we demonstrate that many-body interactions become pronounced and effects such as the Moss-Burstein shift, band gap renormalization, excitonic repulsion, and the formation of Mahan excitons are evident. The coexistence of excitons and free charges that we demonstrate here for photoexcited MAPbBr3 at ultrafast time scales confirms the high potential of the material for both light-emitting diode and tandem solar cell applications.
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Affiliation(s)
- Nikolaos Droseros
- Department
of Chemistry, Biochemistry and Pharmaceutical Sciences, University of Bern, Freiestrasse 3, Bern CH-3012, Switzerland
| | - Parnian Ferdowsi
- Adolphe
Merkle Institute, Chemin des Verdiers 4, Fribourg CH-1700, Switzerland
| | | | - Michael Saliba
- Helmholtz
Young Investigator Group FRONTRUNNER, IEK5-Photovoltaics,
Forschungszentrum Jülich, Jülich 52428, Germany
- Institute
for Photovoltaics, University of Stuttgart, Stuttgart 70569, Germany
| | - Natalie Banerji
- Department
of Chemistry, Biochemistry and Pharmaceutical Sciences, University of Bern, Freiestrasse 3, Bern CH-3012, Switzerland
| | - Demetra Tsokkou
- Department
of Chemistry, Biochemistry and Pharmaceutical Sciences, University of Bern, Freiestrasse 3, Bern CH-3012, Switzerland
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2
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Zhu X, Xiong W, Hu C, Mo K, Yang M, Li Y, Li R, Shen C, Liu Y, Liu X, Wang S, Lin Q, Yuan S, Liu Z, Wang Z. Constructing Ultra-Shallow Near-Edge States for Efficient and Stable Perovskite Solar Cells. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2309487. [PMID: 38174652 DOI: 10.1002/adma.202309487] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/13/2023] [Revised: 11/28/2023] [Indexed: 01/05/2024]
Abstract
Electronic band structure engineering of metal-halide perovskites (MHP) lies at the core of fundamental materials research and photovoltaic applications. However, reconfiguring the band structures in MHP for optimized electronic properties remains challenging. This article reports a generic strategy for constructing near-edge states to improve carrier properties, leading to enhanced device performances. The near-edge states are designed around the valence band edge using theoretical prediction and constructed through tailored material engineering. These states are experimentally revealed with activation energies of around 23 milli-electron volts by temperature-dependent time-resolved spectroscopy. Such small activation energies enable prolonged carrier lifetime with efficient carrier transition dynamics and low non-radiative recombination losses, as corroborated by the millisecond lifetimes of microwave conductivity. By constructing near-edge states in positive-intrinsic-negative inverted cells, a champion efficiency of 25.4% (25.0% certified) for a 0.07-cm2 cell and 23.6% (22.7% certified) for a 1-cm2 cell is achieved. The most stable encapsulated cell retains 90% of its initial efficiency after 1100 h of maximum power point tracking under one sun illumination (100 mW cm-2) at 65 °C in ambient air.
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Affiliation(s)
- Xueliang Zhu
- School of Physics and Technology, Hubei Luojia Laboratory, Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Microelectronics Wuhan University, Wuhan, 430072, China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China
| | - Wenqi Xiong
- School of Physics and Technology, Hubei Luojia Laboratory, Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Microelectronics Wuhan University, Wuhan, 430072, China
| | - Chong Hu
- School of Physics and Technology, Hubei Luojia Laboratory, Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Microelectronics Wuhan University, Wuhan, 430072, China
| | - Kangwei Mo
- School of Physics and Technology, Hubei Luojia Laboratory, Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Microelectronics Wuhan University, Wuhan, 430072, China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China
| | - Man Yang
- School of Physics and Technology, Hubei Luojia Laboratory, Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Microelectronics Wuhan University, Wuhan, 430072, China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China
| | - Yanyan Li
- School of Physics and Technology, Hubei Luojia Laboratory, Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Microelectronics Wuhan University, Wuhan, 430072, China
| | - Ruiming Li
- School of Physics and Technology, Hubei Luojia Laboratory, Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Microelectronics Wuhan University, Wuhan, 430072, China
| | - Chen Shen
- School of Physics and Technology, Hubei Luojia Laboratory, Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Microelectronics Wuhan University, Wuhan, 430072, China
| | - Yong Liu
- School of Physics and Technology, Hubei Luojia Laboratory, Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Microelectronics Wuhan University, Wuhan, 430072, China
| | - Xiaoze Liu
- School of Physics and Technology, Hubei Luojia Laboratory, Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Microelectronics Wuhan University, Wuhan, 430072, China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China
| | - Sheng Wang
- School of Physics and Technology, Hubei Luojia Laboratory, Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Microelectronics Wuhan University, Wuhan, 430072, China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China
| | - Qianqian Lin
- School of Physics and Technology, Hubei Luojia Laboratory, Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Microelectronics Wuhan University, Wuhan, 430072, China
| | - Shengjun Yuan
- School of Physics and Technology, Hubei Luojia Laboratory, Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Microelectronics Wuhan University, Wuhan, 430072, China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China
| | - Zhengyou Liu
- School of Physics and Technology, Hubei Luojia Laboratory, Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Microelectronics Wuhan University, Wuhan, 430072, China
| | - Zhiping Wang
- School of Physics and Technology, Hubei Luojia Laboratory, Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Microelectronics Wuhan University, Wuhan, 430072, China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China
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3
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Wang X, Xu Y, Pan Y, Chai S, Wu J, Zhao J, Li Y, Zhao Z, Li Q, Wu J, Chen J, Bae BS, Zhou J, Zhu Y, Lei W, Xu X. Using N-I-N Photodiodes Made of Perovskite Single Crystals for Low Noise Gamma-Ray Spectroscopy. ACS APPLIED MATERIALS & INTERFACES 2024; 16:12106-12114. [PMID: 38410909 DOI: 10.1021/acsami.4c00432] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/28/2024]
Abstract
Solution-processed lead halide perovskite single crystals (LHPSCs) are believed to have great potential in gamma-ray spectroscopy. However, obtaining low-defect LHPSCs from a solution at low temperatures is difficult compared to obtaining Bridgman single crystals such as CdTe and Si. Herein, noise from the intrinsic defects of LHPSCs is considered as the main problem hindering their gamma-ray detection performance. By isolating the defect-induced holes in LHPSCs via energy barriers, we show that NIN photodiodes based on three types of LHPSCs, i.e., MAPbBr3 (MA = CH3NH3), MAPbBr2.5Cl0.5, and cascade LHPSCs, have demonstrated good energy resolution in the range of 6.7-10.3% for 662 keV 137Cs gamma-ray photons. The noise for >10 mm3 devices is low, in the order of 340-860 electrons, and the electron collection efficiency reaches 23-43%. These results pave the way for obtaining low-cost, large, high energy-resolution gamma-ray detectors at room temperature (300 K).
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Affiliation(s)
- Xin Wang
- School of Electronic Science and Engineering, Southeast University, Nanjing 210000, China
| | - Yubing Xu
- School of Electronic Science and Engineering, Southeast University, Nanjing 210000, China
| | - Yuzhu Pan
- School of Electronic Science and Engineering, Southeast University, Nanjing 210000, China
| | - Shunjie Chai
- School of Electronic Science and Engineering, Southeast University, Nanjing 210000, China
| | - Jie Wu
- School of Electronic Science and Engineering, Southeast University, Nanjing 210000, China
| | - Jingda Zhao
- School of Electronic Science and Engineering, Southeast University, Nanjing 210000, China
| | - Yuwei Li
- School of Electronic Science and Engineering, Southeast University, Nanjing 210000, China
| | - Zhiwei Zhao
- School of Electronic Science and Engineering, Southeast University, Nanjing 210000, China
| | - Qing Li
- School of Electronic Science and Engineering, Southeast University, Nanjing 210000, China
| | - Jun Wu
- School of Electronic Science and Engineering, Southeast University, Nanjing 210000, China
| | - Jing Chen
- School of Electronic Science and Engineering, Southeast University, Nanjing 210000, China
| | - Byung Seong Bae
- Department of Electronics &Display Engineering, Hoseo University, Hoseo Ro 79, Asan City, Chungnam 31499, Republic of Korea
| | | | - Ying Zhu
- E-spectrum Optoelectronic Co. Ltd., Suzhou 215111, China
| | - Wei Lei
- School of Electronic Science and Engineering, Southeast University, Nanjing 210000, China
| | - Xiaobao Xu
- School of Electronic Science and Engineering, Southeast University, Nanjing 210000, China
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4
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Vlk A, Remes Z, Landova L, Ridzonova K, Hlavac R, Fejfar A, Ledinsky M. Spatial Localization of Defects in Halide Perovskites Using Photothermal Deflection Spectroscopy. J Phys Chem Lett 2024; 15:1273-1278. [PMID: 38278141 PMCID: PMC10860124 DOI: 10.1021/acs.jpclett.3c02966] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/24/2023] [Revised: 01/16/2024] [Accepted: 01/23/2024] [Indexed: 01/28/2024]
Abstract
Photothermal deflection spectroscopy (PDS) emerges as a highly sensitive noncontact technique for measuring absorption spectra and serves for studying defect states within semiconductor thin films. In our study, we applied PDS to methylammonium lead bromide single crystals. By analyzing the frequency dependence of the PDS spectra and the phase difference of the signal, we can differentiate between surface and bulk deep defect absorption states. This methodology allowed us to investigate the effects of bismuth doping and light-induced degradation. The identified absorption states are attributed to MA+ vibrational states and structural defects, and their influence on the nonradiative recombination probability is discussed. This distinction significantly enhances our capability to characterize and analyze perovskite materials at a deeper level.
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Affiliation(s)
- Ales Vlk
- Institute of Physics of
the Czech Academy of Sciences, Cukrovarnicka 10, 16200 Prague, Czech
Republic
| | - Zdenek Remes
- Institute of Physics of
the Czech Academy of Sciences, Cukrovarnicka 10, 16200 Prague, Czech
Republic
| | - Lucie Landova
- Institute of Physics of
the Czech Academy of Sciences, Cukrovarnicka 10, 16200 Prague, Czech
Republic
| | - Katarina Ridzonova
- Institute of Physics of
the Czech Academy of Sciences, Cukrovarnicka 10, 16200 Prague, Czech
Republic
| | - Robert Hlavac
- Institute of Physics of
the Czech Academy of Sciences, Cukrovarnicka 10, 16200 Prague, Czech
Republic
| | - Antonin Fejfar
- Institute of Physics of
the Czech Academy of Sciences, Cukrovarnicka 10, 16200 Prague, Czech
Republic
| | - Martin Ledinsky
- Institute of Physics of
the Czech Academy of Sciences, Cukrovarnicka 10, 16200 Prague, Czech
Republic
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5
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Zhang Z, Liang W, Xue J, Li X, Wu K, Lu H. Induced Circularly Polarized Luminescence and Exciton Fine Structure Splitting in Magnetic-Doped Chiral Perovskites. ACS NANO 2024. [PMID: 38324334 DOI: 10.1021/acsnano.3c12851] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/08/2024]
Abstract
Magnetic impurity doping in semiconductors has emerged as an important strategy to endow exotic photophysical and magnetic properties. While most reported hosts are centrosymmetric semiconductors, doping magnetic ions into a noncentrosymmetric chiral semiconductor can offer additional control of photonic and spin polarization. In this work, we synthesized a Mn2+-doped chiral two-dimensional (2D) perovskite, Mn2+:(R-MPA)2PbBr4 (R-MPA+ = R-methyl phenethylammonium). We found that the optical activity of chiral 2D perovskites is enhanced with an increased concentration of Mn2+ ions. Additionally, efficient energy transfer from the chiral host to the Mn2+ dopants is observed. This energy transfer process gives rise to circularly polarized luminescence from the excited state of Mn2+ (4T1 → 6A1), exhibiting a photoluminescence quantum yield up to 24% and a dissymmetry factor of 11%. The exciton fine structures of undoped and Mn2+-doped (R-MPA)2PbBr4 are further studied through magnetic circular dichroism (MCD) spectroscopy. Our analysis shows that chiral organic cations lead to an exciton fine structure splitting energy as large as 5.0 meV, and the splitting is further increased upon Mn2+ doping. Our results reveal the strong impacts of molecular chirality and magnetic dopants on the exciton structures of halide perovskites.
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Affiliation(s)
- Zixuan Zhang
- Department of Chemistry, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong (SAR) 999077, China
| | - Wenfei Liang
- State Key Laboratory of Molecular Reaction Dynamics and Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, Liaoning 116023, China
| | - Jie Xue
- Department of Chemistry, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong (SAR) 999077, China
| | - Xin Li
- Department of Chemistry, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong (SAR) 999077, China
| | - Kaifeng Wu
- State Key Laboratory of Molecular Reaction Dynamics and Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, Liaoning 116023, China
| | - Haipeng Lu
- Department of Chemistry, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong (SAR) 999077, China
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6
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Guo R, Xiong Q, Ulatowski A, Li S, Ding Z, Xiao T, Liang S, Heger JE, Guan T, Jiang X, Sun K, Reb LK, Reus MA, Chumakov A, Schwartzkopf M, Yuan M, Hou Y, Roth SV, Herz LM, Gao P, Müller-Buschbaum P. Trace Water in Lead Iodide Affecting Perovskite Crystal Nucleation Limits the Performance of Perovskite Solar Cells. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2310237. [PMID: 38009650 DOI: 10.1002/adma.202310237] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/03/2023] [Revised: 11/15/2023] [Indexed: 11/29/2023]
Abstract
The experimental replicability of highly efficient perovskite solar cells (PSCs) is a persistent challenge faced by laboratories worldwide. Although trace impurities in raw materials can impact the experimental reproducibility of high-performance PSCs, the in situ study of how trace impurities affect perovskite film growth is never investigated. Here, light is shed on the impact of inevitable water contamination in lead iodide (PbI2 ) on the replicability of device performance, mainly depending on the synthesis methods of PbI2 . Through synchrotron-based structure characterization, it is uncovered that even slight additions of water to PbI2 accelerate the crystallization process in the perovskite layer during annealing. However, this accelerated crystallization also results in an imbalance of charge-carrier mobilities, leading to a degradation in device performance and reduced longevity of the solar cells. It is also found that anhydrous PbI2 promotes a homogenous nucleation process and improves perovskite film growth. Finally, the PSCs achieve a remarkable certified power conversion efficiency of 24.3%. This breakthrough demonstrates the significance of understanding and precisely managing the water content in PbI2 to ensure the experimental replicability of high-efficiency PSCs.
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Affiliation(s)
- Renjun Guo
- Department of Physics, Chair for Functional Materials, TUM School of Natural Sciences, Technical University of Munich, 85748, Garching, Germany
- Solar Energy Research Institute of Singapore, National University of Singapore, 117574, Singapore, Singapore
| | - Qiu Xiong
- Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, 350002, Fuzhou, China
| | - Aleksander Ulatowski
- Department of Physics, University of Oxford, Clarendon Laboratory, OX1 3PU, Oxford, UK
| | - Saisai Li
- Department of Chemistry, Nankai University, 300071, Tianjin, China
| | - Zijin Ding
- Department of Chemistry, Nankai University, 300071, Tianjin, China
| | - Tianxiao Xiao
- Department of Physics, Chair for Functional Materials, TUM School of Natural Sciences, Technical University of Munich, 85748, Garching, Germany
| | - Suzhe Liang
- Department of Physics, Chair for Functional Materials, TUM School of Natural Sciences, Technical University of Munich, 85748, Garching, Germany
| | - Julian E Heger
- Department of Physics, Chair for Functional Materials, TUM School of Natural Sciences, Technical University of Munich, 85748, Garching, Germany
| | - Tianfu Guan
- Department of Physics, Chair for Functional Materials, TUM School of Natural Sciences, Technical University of Munich, 85748, Garching, Germany
| | - Xinyu Jiang
- Department of Physics, Chair for Functional Materials, TUM School of Natural Sciences, Technical University of Munich, 85748, Garching, Germany
| | - Kun Sun
- Department of Physics, Chair for Functional Materials, TUM School of Natural Sciences, Technical University of Munich, 85748, Garching, Germany
| | - Lennart K Reb
- Department of Physics, Chair for Functional Materials, TUM School of Natural Sciences, Technical University of Munich, 85748, Garching, Germany
| | - Manuel A Reus
- Department of Physics, Chair for Functional Materials, TUM School of Natural Sciences, Technical University of Munich, 85748, Garching, Germany
| | - Andrei Chumakov
- Deutsches Elektronen-Synchrotron, Notkestrasse 85, 22607, Hamburg, Germany
| | | | - Minjian Yuan
- Department of Chemistry, Nankai University, 300071, Tianjin, China
| | - Yi Hou
- Solar Energy Research Institute of Singapore, National University of Singapore, 117574, Singapore, Singapore
- Chemical and Biomolecular Engineering, National University of Singapore, 117585, Singapore, Singapore
| | - Stephan V Roth
- Deutsches Elektronen-Synchrotron, Notkestrasse 85, 22607, Hamburg, Germany
- Department of Fiber and Polymer Technology, KTH Royal Institute of Technology, 10044, Stockholm, Sweden
| | - Laura M Herz
- Department of Physics, University of Oxford, Clarendon Laboratory, OX1 3PU, Oxford, UK
- Institute for Advanced Study, Technical University of Munich, 85748, Garching, Germany
| | - Peng Gao
- Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, 350002, Fuzhou, China
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7
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Wang X, Pan Y, Xu Y, Zhao J, Li Y, Li Q, Chen J, Zhao Z, Zhang X, Bae BS, Onwudiwe DC, Xu X, Lei W. Cascade perovskite single crystal for gamma-ray spectroscopy. iScience 2023; 26:107935. [PMID: 37841587 PMCID: PMC10570118 DOI: 10.1016/j.isci.2023.107935] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/02/2023] [Revised: 07/19/2023] [Accepted: 09/13/2023] [Indexed: 10/17/2023] Open
Abstract
The halide lead perovskite single crystals (HLPSCs) have great potential in gamma-ray detection with high attenuation coefficient, strong defects tolerance, and large mobility-lifetime product. However, mobile halide ions would migrate under high external bias, which would both weaken the gamma-ray response and cause additional noise. Here, we report the gamma-ray PIN photodiodes made of cascade HLPSCs including both ion-formed and electron-hole-formed electrical junctions that could suppress the ions migration and improve the charges collection. Our photodiodes based on cascade HLPSCs (MAPbBr3/MAPbBr2.5Cl0.5/MAPbCl3) show a wide halide-ion-formed depletion layer of ∼52 μm. The built-in potential along the wide ionic-formed junction ensures a high mobility-lifetime product of 1.1 × 10-2 cm2V-1. As a result, our gamma-ray PIN photodiodes exhibit compelling response to 241Am, 137Cs, and 60Co; the energy resolution can reach 9.4%@59.5keV and 5.9%@662keV, respectively. This work provides a new path toward constructing high-performance gamma-ray detectors based on HLPSCs.
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Affiliation(s)
- Xin Wang
- School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing, China
| | - Yuzhu Pan
- School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing, China
| | - Yubing Xu
- School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing, China
| | - Jingda Zhao
- School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing, China
| | - Yuwei Li
- School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing, China
| | - Qing Li
- School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing, China
| | - Jing Chen
- School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing, China
| | - Zhiwei Zhao
- School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing, China
| | - Xiaobing Zhang
- School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing, China
| | - Byung Seong Bae
- Department of Electronics &Display Engineering, Hoseo University, Hoseo Ro 79, Asan City, Chungnam 31499, Korea
| | - Damian C. Onwudiwe
- Department of Chemistry, School of Mathematics and Physical Sciences, Faculty of Natural and Agricultural Sciences, North-West University, Mafikeng Campus, Private Bag X2046, Mmabatho 2735, South Africa
| | - Xiaobao Xu
- School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing, China
| | - Wei Lei
- School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing, China
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8
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Vinçon I, Barfüßer A, Feldmann J, Akkerman QA. Quantum Dot Metal Salt Interactions Unraveled by the Sphere of Action Model. J Am Chem Soc 2023. [PMID: 37267531 DOI: 10.1021/jacs.3c03582] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Postsynthetic metal salt treatments are frequently employed in the luminescence enhancement of quantum dots (QDs); however, its microscopic picture remains unclear. CsPbBr3-QDs, featuring strong excitonic absorption and high photoluminescence (PL) quantum yield, are ideal QDs to unravel the intricate interaction between QDs and such surface-bound metal salts. Herein, we study this interaction based on the controlled PL quenching of CsPbBr3-QDs with BiBr3. Upon the addition of BiBr3, an instant and complete PL quenching is observed, which can be fully recovered after the addition of an excess of PbBr2. This, together with the complete preservation of the excitonic absorption suggests a surface-driven adsorption equilibrium. Additionally, time-resolved studies reveal a non-homogeneous surface trap formation. Based on the so-called sphere of action model for the adsorption process, we show that already a single BiBr3 adsorption suffices to completely quench a QD's luminescence. This approach is expanded to analyze size-, ligand-, and metal-dependent quenching dynamics. Facet junctions are identified as regions of enhanced surface reactivity. A Langmuir-type ligand coverage is exposed with a strong impact on adsorption. Our results provide a detailed mechanistic insight into postsynthetic interaction of QDs with metal salts, opening pathways for future surface manipulations.
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Affiliation(s)
- Ilka Vinçon
- Chair for Photonics and Optoelectronics, Nano-Institute Munich, Department of Physics, Ludwig-Maximilians-University Munich, 80539 Munich, Germany
| | - Anja Barfüßer
- Chair for Photonics and Optoelectronics, Nano-Institute Munich, Department of Physics, Ludwig-Maximilians-University Munich, 80539 Munich, Germany
| | - Jochen Feldmann
- Chair for Photonics and Optoelectronics, Nano-Institute Munich, Department of Physics, Ludwig-Maximilians-University Munich, 80539 Munich, Germany
| | - Quinten A Akkerman
- Chair for Photonics and Optoelectronics, Nano-Institute Munich, Department of Physics, Ludwig-Maximilians-University Munich, 80539 Munich, Germany
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9
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Kashtiban RJ, Patrick CE, Ramasse Q, Walton RI, Sloan J. Picoperovskites: The Smallest Conceivable Isolated Halide Perovskite Structures Formed within Carbon Nanotubes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2208575. [PMID: 36528852 DOI: 10.1002/adma.202208575] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/18/2022] [Revised: 11/24/2022] [Indexed: 06/17/2023]
Abstract
Halide perovskite structures are revolutionizing the design of optoelectronic materials, including solar cells, light-emitting diodes, and photovoltaics when formed at the quantum scale. Four isolated sub-nanometer, or picoscale, halide perovskite structures formed inside ≈1.2-1.6 nm single-walled carbon nanotubes (SWCNTs) by melt insertion from CsPbBr3 and lead-free CsSnI3 are reported. Three directly relate to the ABX3 perovskite archetype while a fourth is a perovskite-like lamellar structure with alternating Cs4 and polyhedral Sn4 Ix layers. In ≈1.4 nm-diameter SWCNTs, CsPbBr3 forms Cs3 PbII Br5 nanowires, one ABX3 unit cell in cross section with the Pb2+ oxidation state maintained by ordered Cs+ vacancies. Within ≈1.2 nm-diameter SWCNTs, CsPbBr3 and CsSnI3 form inorganic-polymer-like bilayer structures, one-fourth of an ABX3 unit cell in cross section with systematically reproduced ABX3 stoichiometry. Producing these smallest halide perovskite structures at their absolute synthetic cross-sectional limit enables quantum confinement effects with first-principles calculations demonstrating bandgap widening compared to corresponding bulk structural forms.
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Affiliation(s)
- Reza J Kashtiban
- Department of Physics, University of Warwick, Coventry, CV4 7AL, UK
| | | | - Quentin Ramasse
- SuperSTEM Laboratory, SciTech Daresbury Campus, Daresbury, WA44AD, UK
- School of Chemical and Process Engineering, University of Leeds, Leeds, LS2 9JT, UK
| | - Richard I Walton
- Department of Chemistry, University of Warwick, Coventry, CV4 7AL, UK
| | - Jeremy Sloan
- Department of Physics, University of Warwick, Coventry, CV4 7AL, UK
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10
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Xiao Z, Tao T, Shu J, Pan R, Dang W, Zhao N, Pan S, Zhang W. Charge Carrier Recombination Dynamics in MAPb(Br xCl 1-x) 3 Single Crystals. J Phys Chem Lett 2023; 14:245-252. [PMID: 36594895 DOI: 10.1021/acs.jpclett.2c03606] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Understanding carrier recombination processes in MAPb(BrxCl1-x)3 crystals is essential for their photoelectrical applications. In this work, carrier recombination dynamics in MAPb(BrxCl1-x)3 single crystals were studied by steady-state photoluminescence (PL), time-resolved photoluminescence (TRPL), and time-resolved microwave photoconductivity (TRMC). By comparing TRPL and TRMC, we find TRPL of MAPb(BrxCl1-x)3 (x < 0.98) single crystals is dominated by a hole trapping process while the long-lived component of TRMC is dominated by an electron trapping process. We also find both electron and hole trapping rates of MAPb(BrxCl1-x)3 (x < 0.98) crystals decrease with an increase in Br content. A temperature-dependent PL study shows there are shallow trap states besides the deep level trap states in the MAPb(Br0.82Cl0.18)3 crystal. The activation energy for holes in shallow trap states detrapped into the valence band is ∼0.1 eV, while the activation energy for free holes to be trapped into deep trap states is ∼0.4 eV. This work provides insight into carrier recombination processes in MAPb(BrxCl1-x)3 single crystals.
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Affiliation(s)
- Zijie Xiao
- School of Physics and Materials Science, Guangzhou University, Guangzhou510006, China
| | - Tingting Tao
- Hebei Key Lab of Optic-electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding071002, China
| | - Jingting Shu
- Hebei Key Lab of Optic-electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding071002, China
| | - Runhui Pan
- School of Physics and Materials Science, Guangzhou University, Guangzhou510006, China
| | - Wei Dang
- Hebei Key Lab of Optic-electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding071002, China
| | - Ningjiu Zhao
- Songshan Lake Materials Laboratory, Dongguan523808, China
| | - Shusheng Pan
- School of Physics and Materials Science, Guangzhou University, Guangzhou510006, China
- Research Center for Advanced Information Materials (CAIM), Huangpu Research and Graduate School of Guangzhou University, Guangzhou510006, China
| | - Wei Zhang
- School of Physics and Materials Science, Guangzhou University, Guangzhou510006, China
- Research Center for Advanced Information Materials (CAIM), Huangpu Research and Graduate School of Guangzhou University, Guangzhou510006, China
- Guangzhou University-Linköping University Research Center on Urban Sustainable Development, Guangzhou University, Guangzhou510006, China
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11
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Pan Y, Wang X, Liao Y, Xu Y, Li Y, Li Q, Zhang X, Chen J, Zhu Z, Zhao Z, Elemike EE, Furuta M, Lei W. Epitaxial Perovskite Single-Crystalline Heterojunctions for Filter-Free Ultra-Narrowband Detection with Tunable Spectral Responses. ACS APPLIED MATERIALS & INTERFACES 2022; 14:50331-50342. [PMID: 36300824 DOI: 10.1021/acsami.2c13126] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Narrowband photodetectors (NPDs) with the capability of detecting light within a selective wavelength range are in high demand for numerous emerging applications such as imaging systems, machine vision, and optical communication. Halide perovskite materials have been developed for eliminating the current complex filtering systems in NPDs due to their beneficial properties, while currently NPDs using perovskite materials are limited by hardly fully eliminated short wavelength response, low charge collection efficiency (CCE), complex fabrication process, and so forth. Herein, a series of perovskite single-crystalline heterojunctions (PSCHs) with a structure of Bi-MAPbX3/MAPbY3 are fabricated by liquid phase epitaxy for filter-free narrowband detection. By varying the halide component in the PSCH, the PSCH-based NPDs can realize continuously tunable spectral response range from blue to NIR regions and ultra-narrow full width at half-maximum (FWHM) of <20 nm. Specifically, the PSCH-based NPD with a high CCE under a large electric filed shows a high spectra rejection ratio of >1000, a fast response speed with rise/fall time of ∼160/∼225 μs, and long-term stability more than 3 months in ambient air. This work provides a simple strategy for designing low-cost and high-performance filter-free NPDs with a tunable spectral response.
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Affiliation(s)
- Yuzhu Pan
- State Key Laboratory of Nuclear Power Safety Monitoring Technology and Equipment, China Nuclear Power Engineering Co. Ltd., Shenzhen, Guangdong518045, China
- School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing210096, China
| | - Xin Wang
- School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing210096, China
| | - Yuhan Liao
- School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing210096, China
| | - Yubing Xu
- School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing210096, China
| | - Yuwei Li
- School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing210096, China
| | - Qing Li
- School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing210096, China
| | - Xiaobing Zhang
- School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing210096, China
| | - Jing Chen
- School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing210096, China
| | - Zhuoya Zhu
- School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing210096, China
| | - Zhiwei Zhao
- School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing210096, China
| | - Elias Emeka Elemike
- Department of Chemistry, School of Physical and Chemical Sciences, Faculty of Natural and Agricultural Sciences, North-West University, Mafikeng, Private Bag X2046, Mmabatho2735, South Africa
| | - Mamoru Furuta
- Department of Environmental Science and Engineering, Kochi University of Technology, Kami, Kochi782-8502, Japan
| | - Wei Lei
- School of Electronic Science and Engineering, Joint International Research Laboratory of Information Display and Visualization, Southeast University, Nanjing210096, China
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12
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Gong W, Yan J, Gao F, Ding S, He G, Li L. High-Performance UV-Vis Broad-Spectra Photodetector Based on a β-Ga 2O 3/Au/MAPbBr 3 Sandwich Structure. ACS APPLIED MATERIALS & INTERFACES 2022; 14:47853-47862. [PMID: 36251575 DOI: 10.1021/acsami.2c11681] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The UV-vis photodetector (PD), a detector that can simultaneously detect light in the ultraviolet region and the visible region, has a wide range of applications in military and civilian fields. Currently, it is very difficult to obtain good detection performance in the UV region (especially in the solar-blind range) like in the visible region with most UV-vis PDs. This severely affects the practical application of UV-vis broad-spectra PDs. Here, a simple sandwich structure PD (SSPD) composed of β-Ga2O3, Au electrodes, and the MAPbBr3 perovskite is designed and fabricated to simultaneous enhance the detection performance in the UV and visible light regions. The β-Ga2O3/Au/MAPbBr3 SSPD exhibits enhanced optoelectronic performance with high responsivities of 0.47 and 1.43 A W-1 at 240 and 520 nm under a bias of 6 voltage (V), respectively, which are 8.5 and 23 times than that of the metal-semiconductor-metal (MSM) structure MAPbBr3 PD at 6 V, respectively. The enhanced performance was attributed to the effective suppression of carrier recombination due to the efficient interface charge separation in the device structure. In addition, the self-powered response characteristic is also realized by forming a type-II heterojunction between β-Ga2O3 and MAPbBr3, which gives the β-Ga2O3/Au/MAPbBr3 SSPD superior single-pixel photo-imaging ability without an external power supply. This work provides a simple and effective method for the preparation of high-performance self-powered imaging PDs in the UV-visible region.
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Affiliation(s)
- Weiqiang Gong
- Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin150025, China
| | - Jun Yan
- Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin150025, China
| | - Feng Gao
- Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin150025, China
| | - Sunan Ding
- School of Microelectronics, Southern University of Science and Technology, Shenzhen518055, China
| | - Gaohang He
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou215123, China
| | - Lin Li
- Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin150025, China
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13
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Perovskite superlattices with efficient carrier dynamics. Nature 2022; 608:317-323. [PMID: 35948711 DOI: 10.1038/s41586-022-04961-1] [Citation(s) in RCA: 40] [Impact Index Per Article: 20.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/04/2021] [Accepted: 06/09/2022] [Indexed: 11/09/2022]
Abstract
Compared with their three-dimensional (3D) counterparts, low-dimensional metal halide perovskites (2D and quasi-2D; B2An-1MnX3n+1, such as B = R-NH3+, A = HC(NH2)2+, Cs+; M = Pb2+, Sn2+; X = Cl-, Br-, I-) with periodic inorganic-organic structures have shown promising stability and hysteresis-free electrical performance1-6. However, their unique multiple-quantum-well structure limits the device efficiencies because of the grain boundaries and randomly oriented quantum wells in polycrystals7. In single crystals, the carrier transport through the thickness direction is hindered by the layered insulating organic spacers8. Furthermore, the strong quantum confinement from the organic spacers limits the generation and transport of free carriers9,10. Also, lead-free metal halide perovskites have been developed but their device performance is limited by their low crystallinity and structural instability11. Here we report a low-dimensional metal halide perovskite BA2MAn-1SnnI3n+1 (BA, butylammonium; MA, methylammonium; n = 1, 3, 5) superlattice by chemical epitaxy. The inorganic slabs are aligned vertical to the substrate and interconnected in a criss-cross 2D network parallel to the substrate, leading to efficient carrier transport in three dimensions. A lattice-mismatched substrate compresses the organic spacers, which weakens the quantum confinement. The performance of a superlattice solar cell has been certified under the quasi-steady state, showing a stable 12.36% photoelectric conversion efficiency. Moreover, an intraband exciton relaxation process may have yielded an unusually high open-circuit voltage (VOC).
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14
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Marjit K, Ghosh G, Biswas RK, Ghosh S, Pati SK, Patra A. Modulating the Carrier Relaxation Dynamics in Heterovalently (Bi 3+) Doped CsPbBr 3 Nanocrystals. J Phys Chem Lett 2022; 13:5431-5440. [PMID: 35679509 DOI: 10.1021/acs.jpclett.2c01270] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Manipulation of intrinsic carrier relaxation is crucial for designing efficient lead halide perovskite nanocrystal (NC) based optoelectronic devices. The influence of heterovalent Bi3+ doping on the ultrafast carrier dynamics and hot carrier (HC) cooling relaxation of CsPbBr3 NCs has been studied using femtosecond transient absorption spectroscopy and first-principles calculations. The initial HC temperature and LO phonon decay time point to a faster HC relaxation rate in the Bi3+-doped CsPbBr3 NCs. The first-principles calculations disclose the acceleration of carrier relaxation in Bi3+-doped CsPbBr3 NCs due to the appearance of localized bands (antitrap states) within the conduction band. The higher Born effective charges (Z*) and higher soft energetic optical phonon density of states cause higher electron-phonon scattering rates in the Bi-doped CsPbBr3 system, which is responsible for the faster HC cooling rate in doped systems.
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Affiliation(s)
- Kritiman Marjit
- School of Materials Sciences, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India
| | - Goutam Ghosh
- School of Materials Sciences, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India
| | - Raju K Biswas
- Theoretical Sciences Unit, School of Advanced Materials (SAMat), Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Bangalore 560064, India
| | - Srijon Ghosh
- School of Materials Sciences, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India
| | - Swapan K Pati
- Theoretical Sciences Unit, School of Advanced Materials (SAMat), Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Bangalore 560064, India
| | - Amitava Patra
- School of Materials Sciences, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India
- Institute of Nano Science and Technology, Knowledge City, Sector 81, Mohali 140306, India
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15
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Zhang Y, Zhang Z, Yu W, He Y, Chen Z, Xiao L, Shi J, Guo X, Wang S, Qu B. Lead-free Double Perovskite Cs 2 AgIn 0.9 Bi 0.1 Cl 6 Quantum Dots for White Light-Emitting Diodes. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2102895. [PMID: 34841731 PMCID: PMC8805553 DOI: 10.1002/advs.202102895] [Citation(s) in RCA: 23] [Impact Index Per Article: 11.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/06/2021] [Revised: 09/17/2021] [Indexed: 05/26/2023]
Abstract
Perovskite-based optoelectronic devices have attracted considerable attention owing to their excellent device performances and facile solution processing. However, the toxicity and intrinsic instability of lead-based perovskites have limited their commercial development. Moreover, the provision of an efficient white emission from a single perovskite layer is challenging. Here, novel electrically excited white light-emitting diodes (WLEDs) based on lead-free double perovskite Cs2 AgIn0.9 Bi0.1 Cl6 quantum dots (QDs) without any phosphor are fabricated for the first time. Density functional theory calculations are carried out to clarify the mechanism of absorption and recombination in Cs2 AgIn0.9 Bi0.1 Cl6 with Bi-doping breaking the parity-forbidden transition of the direct bandgap. Microzone optical and electronic characterizations reveal that the broadband emission of Cs2 AgIn0.9 Bi0.1 Cl6 QDs originates from self-trapped excitons, and luminescent properties are unchanged after the film deposition. The QD-WLED exhibits excellent Commission Internationale de L'Eclairage color coordinates, correlated color temperature and relatively high color rendering index of (0.32, 0.32), 6432 K, and 94.5, respectively. The maximum luminance of 158 cd m-2 is achieved by triphenylphosphine oxide passivation, and this lead-free QD-WLED exhibits a superior stability in ambient air with a long T50 ≈48.53 min. Therefore, lead-free perovskite Cs2 AgIn0.9 Bi0.1 Cl6 QDs are promising candidates for use in WLEDs in the future.
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Affiliation(s)
- Yuqing Zhang
- State Key Laboratory for Artificial Microstructures and Mesoscopic PhysicsDepartment of PhysicsPeking UniversityBeijing100871P. R. China
| | - Zehao Zhang
- State Key Laboratory for Artificial Microstructures and Mesoscopic PhysicsDepartment of PhysicsPeking UniversityBeijing100871P. R. China
| | - Wenjin Yu
- State Key Laboratory for Artificial Microstructures and Mesoscopic PhysicsDepartment of PhysicsPeking UniversityBeijing100871P. R. China
| | - Yong He
- State Key Laboratory for Artificial Microstructures and Mesoscopic PhysicsDepartment of PhysicsPeking UniversityBeijing100871P. R. China
| | - Zhijian Chen
- State Key Laboratory for Artificial Microstructures and Mesoscopic PhysicsDepartment of PhysicsPeking UniversityBeijing100871P. R. China
| | - Lixin Xiao
- State Key Laboratory for Artificial Microstructures and Mesoscopic PhysicsDepartment of PhysicsPeking UniversityBeijing100871P. R. China
| | - Jun‐jie Shi
- State Key Laboratory for Artificial Microstructures and Mesoscopic PhysicsDepartment of PhysicsPeking UniversityBeijing100871P. R. China
| | - Xuan Guo
- State Key Laboratory for Artificial Microstructures and Mesoscopic PhysicsDepartment of PhysicsPeking UniversityBeijing100871P. R. China
- Key Laboratory of Optoelectronic Science and Technology for Medicine of Ministry of EducationFujian Provincial Key Laboratory for Photonics TechnologyFujian Normal UniversityFuzhou350007P. R. China
| | - Shufeng Wang
- State Key Laboratory for Artificial Microstructures and Mesoscopic PhysicsDepartment of PhysicsPeking UniversityBeijing100871P. R. China
| | - Bo Qu
- State Key Laboratory for Artificial Microstructures and Mesoscopic PhysicsDepartment of PhysicsPeking UniversityBeijing100871P. R. China
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16
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Zhao J, Caselli VM, Bus M, Boshuizen B, Savenije TJ. How Deep Hole Traps Affect the Charge Dynamics and Collection in Bare and Bilayers of Methylammonium Lead Bromide. ACS APPLIED MATERIALS & INTERFACES 2021; 13:16309-16316. [PMID: 33787206 PMCID: PMC8045023 DOI: 10.1021/acsami.1c00714] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/09/2023]
Abstract
Wide-band-gap perovskites such as methylammonium lead bromide (MAPB) are promising materials for tandem solar cells because of their potentially high open-circuit voltage, which is yet still far below the maximum limit. The relatively short charge-carrier lifetimes deduced from time-resolved photoluminescence (TRPL) measurements seem in strong contrast with the long lifetimes observed with time-resolved photoconductance measurements. This is explained by a large amount of hole defect states, NT > 1016 cm-3, in spin-coated layers of MAPB residing at or near the grain boundaries. The introduction of hypophosphorous acid (HPA) increases the average grain size by a factor of 3 and reduces the total concentration of the trap states by a factor of 10. The introduction of HPA also increases the fraction of initially generated holes that undergo charge transfer to the selective contact, Spiro-OMeTAD (SO), by an order of magnitude. In contrast to methylammonium lead iodide (MAPI)/SO bilayers, a reduction of the carrier lifetime is observed in MAPB/SO bilayers, which is attributed to the fact that injected holes undergo interfacial recombination via these trap states. Our findings provide valuable insight into the optoelectronic properties of bromide-containing lead halide perovskites essential for designing efficient tandem solar cells.
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17
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Jedlicka E, Wang J, Mutch J, Jung YK, Went P, Mohammed J, Ziffer M, Giridharagopal R, Walsh A, Chu JH, Ginger DS. Bismuth Doping Alters Structural Phase Transitions in Methylammonium Lead Tribromide Single Crystals. J Phys Chem Lett 2021; 12:2749-2755. [PMID: 33705146 DOI: 10.1021/acs.jpclett.1c00334] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
We study the effects of bismuth doping on the crystal structure and phase transitions in single crystals of the perovskite semiconductor methylammonium lead tribromide, MAPbBr3. By measuring the temperature-dependent specific heat capacity (Cp), we find that as the Bi doping increases, the phase transition assigned to the cubic to tetragonal phase boundary decreases in temperature. Furthermore, after doping we observe one phase transition between 135 and 155 K, in contrast to two transitions observed in the undoped single crystal. These results appear strikingly similar to previously reported effects of mechanical pressure on perovskite crystal structure. Using X-ray diffraction, we show that the lattice constant decreases as Bi is incorporated into the crystal, as predicted by density functional theory. We propose that bismuth substitutional doping on the lead site is dominant, resulting in BiPb+ centers that induce compressive chemical strain that alters the crystalline phase transitions.
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Affiliation(s)
- Erin Jedlicka
- Department of Chemistry, University of Washington, Seattle, Washington 98105, United States
| | - Jian Wang
- Department of Chemistry, University of Washington, Seattle, Washington 98105, United States
| | - Joshua Mutch
- Department of Physics, University of Washington, Seattle, Washington 98105, United States
| | - Young-Kwang Jung
- Department of Materials and Science Engineering, Yonsei University, Seoul 03722, Korea
| | - Preston Went
- Department of Physics, University of Washington, Seattle, Washington 98105, United States
| | - Joseph Mohammed
- Department of Chemistry, University of Washington, Seattle, Washington 98105, United States
| | - Mark Ziffer
- Department of Chemistry, University of Washington, Seattle, Washington 98105, United States
| | - Rajiv Giridharagopal
- Department of Chemistry, University of Washington, Seattle, Washington 98105, United States
| | - Aron Walsh
- Department of Materials and Science Engineering, Yonsei University, Seoul 03722, Korea
- Department of Materials, Imperial College London, London SW7 2AZ, United Kingdom
| | - Jiun-Haw Chu
- Department of Physics, University of Washington, Seattle, Washington 98105, United States
| | - David S Ginger
- Department of Chemistry, University of Washington, Seattle, Washington 98105, United States
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18
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Dehnhardt N, Luy J, Klement P, Schipplick L, Chatterjee S, Tonner R, Heine J. Gemischte Gruppe‐14‐15‐Metallate als Modellverbindungen für dotierte Bleihalogenidperowskite. Angew Chem Int Ed Engl 2021. [DOI: 10.1002/ange.202014696] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
Affiliation(s)
- Natalie Dehnhardt
- Fachbereich Chemie und Wissenschaftliches Zentrum für Materialwissenschaften WZMW Philipps-Universität Marburg Hans-Meerwein-Straße 35043 Marburg Deutschland
| | - Jan‐Niclas Luy
- Fakultät für Chemie und Pharmazie Universität Regensburg Universitätsstraße 31 93053 Regensburg Deutschland
| | - Philip Klement
- I. Physikalisches Institut & Zentrum für Materialforschung (ZfM) Justus Liebig Universität Gießen Heinrich-Buff-Ring 16 35392 Gießen Deutschland
| | - Luca Schipplick
- Fachbereich Chemie und Wissenschaftliches Zentrum für Materialwissenschaften WZMW Philipps-Universität Marburg Hans-Meerwein-Straße 35043 Marburg Deutschland
| | - Sangam Chatterjee
- I. Physikalisches Institut & Zentrum für Materialforschung (ZfM) Justus Liebig Universität Gießen Heinrich-Buff-Ring 16 35392 Gießen Deutschland
| | - Ralf Tonner
- Fakultät für Chemie und Pharmazie Universität Regensburg Universitätsstraße 31 93053 Regensburg Deutschland
- Derzeitige Adresse: Wilhelm-Ostwald-Institut für Physikalische und Theoretische Chemie Universität Leipzig Linnéstraße 2 04103 Leipzig Deutschland
| | - Johanna Heine
- Fachbereich Chemie und Wissenschaftliches Zentrum für Materialwissenschaften WZMW Philipps-Universität Marburg Hans-Meerwein-Straße 35043 Marburg Deutschland
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19
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Dehnhardt N, Luy J, Klement P, Schipplick L, Chatterjee S, Tonner R, Heine J. Mixed Group 14–15 Metalates as Model Compounds for Doped Lead Halide Perovskites. Angew Chem Int Ed Engl 2021. [PMCID: PMC7898470 DOI: 10.1002/anie.202014696] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/26/2023]
Abstract
Doping and alloying are valuable tools for modifying and enhancing the properties and performance of lead halide perovskites. However, the effects of heterovalent doping with Sb3+ and Bi3+ cations are still a matter of current investigation. Due to the different charge of the dopants compared to the constituting Pb2+ ions, a simultaneous creation of defects is unavoidable and the influence of these defects and the actual metal substitution become entangled. Herein, we present the first 14–15 iodido metalates, (BED)4PbE2I16 (BED=N‐benzylethylenediammonium; E=Sb (1), Bi (2)), which are model compounds for doped lead iodide perovskites and display surprisingly low band gaps of 2.01 (1) and 1.88 eV (2). Quantum chemical investigations show that this stems from a good electronic match between the PbI6 and EI6 units of the compounds. Our results provide a model system for doped perovskites, but also represent the first examples of a promising new class of metal halide materials.
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Affiliation(s)
- Natalie Dehnhardt
- Department of Chemistry and Material Sciences Center Philipps-Universität Marburg Hans-Meerwein-Strasse 35043 Marburg Germany
| | - Jan‐Niclas Luy
- Faculty of Chemistry and Pharmacy University of Regensburg Universitätsstrasse 31 93053 Regensburg Germany
| | - Philip Klement
- Institute of Experimental Physics I and Center for Materials Research (ZfM) Justus Liebig University Giessen Heinrich-Buff-Ring 16 35392 Giessen Germany
| | - Luca Schipplick
- Department of Chemistry and Material Sciences Center Philipps-Universität Marburg Hans-Meerwein-Strasse 35043 Marburg Germany
| | - Sangam Chatterjee
- Institute of Experimental Physics I and Center for Materials Research (ZfM) Justus Liebig University Giessen Heinrich-Buff-Ring 16 35392 Giessen Germany
| | - Ralf Tonner
- Faculty of Chemistry and Pharmacy University of Regensburg Universitätsstrasse 31 93053 Regensburg Germany
- Current address: Wilhelm-Ostwald-Institut für Physikalische und Theoretische Chemie Universität Leipzig Linnéstrasse 2 04103 Leipzig Germany
| | - Johanna Heine
- Department of Chemistry and Material Sciences Center Philipps-Universität Marburg Hans-Meerwein-Strasse 35043 Marburg Germany
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20
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Chatterjee S, Ghosal M, Tiwari K, Sen P. Potassium-Induced Passivation of Deep Traps in Bismuth-Doped Hybrid Lead Bromide Perovskite Nanocrystals: Massive Amplification of Photoluminescence Quantum Yield. J Phys Chem Lett 2021; 12:546-551. [PMID: 33378209 DOI: 10.1021/acs.jpclett.0c03092] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The low photoluminescence quantum yield of Bi3+-doped lead halide perovskite nanocrystals (NCs) is a big challenge to the scientific community. This makes them a weak candidate in the optoelectronics field in spite of their better stability than the pure lead analogue. Herein, the reason behind this reduction of quantum yield in hybrid mixed lead-bismuth bromide (MPBBr) NC is investigated and proposed to be due to ultrafast trapping transfer in the core of the NC, and not due to the surface trap states. Further, we have successfully boosted the quantum yield of MPBBr NC from 9% to 64% by passivating the deep traps within the crystal core by monovalent potassium ion doping. The stability of the developed Bi3+/K+-doped lead halide perovskite NC was found to be extremely high in atmospheric conditions, and this property is sustained up to 100 °C.
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Affiliation(s)
- Shovon Chatterjee
- Department of Chemistry, Indian Institute of Technology Kanpur, Kanpur 208 016, Uttar Pradesh, India
| | - Mainak Ghosal
- Department of Chemistry, Indian Institute of Technology Kanpur, Kanpur 208 016, Uttar Pradesh, India
| | - Khushubo Tiwari
- Department of Material Science and Engineering, Indian Institute of Technology Kanpur, Kanpur 208 016, Uttar Pradesh, India
| | - Pratik Sen
- Department of Chemistry, Indian Institute of Technology Kanpur, Kanpur 208 016, Uttar Pradesh, India
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Pan Y, Wang X, Zhao J, Xu Y, Li Y, Li Q, Zhang X, Zhao Z, Zhu Z, Jing C, Jun W, Emeka Elemike E, Bae BS, Lei W. Photodiodes based on a MAPbBr 3/Bi 3+-doped MAPbCl 3 single crystals heterojunction for the X-ray detection. CrystEngComm 2021. [DOI: 10.1039/d1ce00406a] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The epitaxially fabricated MAPbBr3/Bi3+-doped MAPbCl3 PSCs pN heterojunction shows advanced X-ray detection performance with decreased dark current density and faster response time under relatively high external reverse voltage.
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Ricciarelli D, Mosconi E, Merabet B, Bizzarri O, De Angelis F. Electronic Properties and Carrier Trapping in Bi and Mn Co-doped CsPbCl 3 Perovskite. J Phys Chem Lett 2020; 11:5482-5489. [PMID: 32551644 PMCID: PMC8008448 DOI: 10.1021/acs.jpclett.0c01567] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/21/2020] [Accepted: 06/17/2020] [Indexed: 06/11/2023]
Abstract
Metal halide perovskites exhibit impressive optoelectronic properties with applications in solar cells and light-emitting diodes. Co-doping the high-band gap CsPbCl3 perovskite with Bi and Mn enhances both material stability and luminescence, providing emission on a wide spectral range. To discuss the role of Bi3+ and Mn2+ dopants in tuning the CsPbCl3 perovskite energy levels and their involvement in carrier trapping, we report state-of-the-art hybrid density functional theory calculations, including spin-orbit coupling. We show that co-doping the perovskite with Bi and Mn delivers essentially the sum of the electronic properties of the single dopants, with no significant interaction or the preferential mutual location of them. Furthermore, we identify the structural features and energetics of transitions of electrons trapped at Bi and holes trapped at Mn dopant ions, respectively, and discuss their possible role in determining the optical properties of the co-doped perovskite.
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Affiliation(s)
- Damiano Ricciarelli
- Department
of Chemistry, Biology and Biotechnology, University of Perugia, Via Elce di Sotto 8, 06123 Perugia, Italy
- Istituto
CNR di Scienze e Tecnologie Chimiche “Giulio Natta”
(CNR-SCITEC), Via Elce di Sotto 8, 06123 Perugia, Italy
| | - Edoardo Mosconi
- Istituto
CNR di Scienze e Tecnologie Chimiche “Giulio Natta”
(CNR-SCITEC), Via Elce di Sotto 8, 06123 Perugia, Italy
| | - Boualem Merabet
- Faculty
of Sciences and Technology, University of
Mustapha Stambouli, Mascara 29000, Algeria
- Laboratoire
de Physique Computationnelle des Materiaux, Faculté de Sciences
Exates, Deṕartement de Physique, Université Djillali Liabes̀, Sidi Bel Abbes̀ 22000, Algeria
| | - Olivia Bizzarri
- Istituto
CNR di Scienze e Tecnologie Chimiche “Giulio Natta”
(CNR-SCITEC), Via Elce di Sotto 8, 06123 Perugia, Italy
| | - Filippo De Angelis
- Department
of Chemistry, Biology and Biotechnology, University of Perugia, Via Elce di Sotto 8, 06123 Perugia, Italy
- Istituto
CNR di Scienze e Tecnologie Chimiche “Giulio Natta”
(CNR-SCITEC), Via Elce di Sotto 8, 06123 Perugia, Italy
- CompuNet, Istituto
Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy
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