Toward Full-Color Electroluminescent Quantum Dot Displays

Potassium Iodide Doping for Vacancy Substitution and Dangling Bond Repair in InP Core-Shell Quantum Dots

This work highlights the novel approach of incorporating potassium iodide (KI) doping during the synthesis of In0.53P0.47 core quantum dots (QDs) to significantly reduce the concentration of vacancies (i.e., In vacancies; VIn-) within the bulk of the core QD and inhibit the formation of InPOx at the core QD-Zn0.6Se0.4 shell interfaces. The photoluminescence quantum yield (PLQY) of ~97% and full width at half maximum (FWHM) of ~40 nm were achieved for In0.53P0.47/Zn0.6Se0.4/Zn0.6Se0.1S0.3/Zn0.5S0.5 core/multi-shell QDs emitting red light, which is essential for a quantum-dot organic light-emitting diode (QD-OLED) without red, green, and blue crosstalk. KI doping eliminated VIn- in the core QD bulk by forming K+-VIn- substitutes and effectively inhibited the formation of InPO4(H2O)2 at the core QD-Zn0.6Se0.4 shell interface through the passivation of phosphorus (P)-dangling bonds by P-I bonds. The elimination of vacancies in the core QD bulk was evidenced by the decreased relative intensity of non-radiative unpaired electrons, measured by electron spin resonance (ESR). Additionally, the inhibition of InPO4(H2O)2 formation at the core QD and shell interface was confirmed by the absence of the {210} X-ray diffraction (XRD) peak intensity for the core/multi-shell QDs. By finely tuning the doping concentration, the optimal level was achieved, ensuring maximum K-VIn- substitution, minimal K+ and I- interstitials, and maximum P-dangling bond passivation. This resulted in the smallest core QD diameter distribution and maximized optical properties. Consequently, the maximum PLQY (~97%) and minimum FWHM (~40 nm) were observed at 3% KI doping. Furthermore, the color gamut of a QD-OLED display using R-, G-, and B-QD functional color filters (i.e., ~131.1%@NTSC and ~98.2@Rec.2020) provided a nearly perfect color representation, where red-light-emitting KI-doped QDs were applied.

A high temperature in situ optical probe for colloidal nanocrystal synthesis

We report on the fabrication and utilization of a robust high-temperature (>300 °C), adjustable-path-length, vacuum-tolerant, configurable, in situ optical probe, which interfaces with widely used chemical glassware via a 14/20 ground glass joint. This probe allows for high-speed reaction monitoring of colloidal semiconductor nanocrystal solutions at temperatures that were previously inaccessible. We demonstrate this capability by monitoring the hot-injection synthesis of CdSe quantum dots via UV-Vis absorption spectroscopy at 380 °C with a time resolution of ∼10 ms, with the primary limitation being the acquisition and data saving rate of the commercial spectrometer used. We further demonstrate that this probe can also be used for in situ photoluminescence measurements. This system is generally applicable to harsh solution environments where optical monitoring of reaction progress is desirable and/or necessary.

Low-Temperature Cross-Linked Hole Transport Layer for High-Performance Blue Quantum-Dot Light-Emitting Diodes

Quantum-dot light-emitting diodes (QLEDs), a kind of promising optoelectronic device, demonstrate potential superiority in next-generation display technology. Thermal cross-linked hole transport materials (HTMs) have been employed in solution-processed QLEDs due to their excellent thermal stability and solvent resistance, whereas the unbalanced charge injection and high cross-linking temperature of cross-linked HTMs can inhibit the efficiency of QLEDs and limit their application. Herein, a low-temperature cross-linked HTM of 4,4'-bis(3-(((4-vinylbenzyl)oxy)methyl)-9H-carbazol-9-yl)-1,1'-biphenyl (DV-CBP) with a flexible styrene side chain is introduced, which reduces the cross-linking temperature to 150 °C and enhances the hole mobility up to 1.01 × 10-3 cm2 V-1 s-1. More importantly, the maximum external quantum efficiency of 21.35% is successfully obtained on the basis of the DV-CBP as a cross-linked hole transport layer (HTL) for blue QLEDs. The low-temperature cross-linked high-mobility HTL using flexible side chains could be an excellent alternative for future HTL development.

Recent advances in photoelectrochemical hydrogen production using I-III-VI quantum dots

Photoelectrochemical (PEC) water splitting, recognized for its potential in producing solar hydrogen through clean and sustainable methods, has gained considerable interest, particularly with the utilization of semiconductor nanocrystal quantum dots (QDs). This minireview focuses on recent advances in PEC hydrogen production using I-III-VI semiconductor QDs. The outstanding optical and electrical properties of I-III-VI QDs, which can be readily tuned by modifying their size, composition, and shape, along with an inherent non-toxic nature, make them highly promising for PEC applications. The performance of PEC devices using these QDs can be enhanced by various strategies, including ligand modification, defect engineering, doping, alloying, and core/shell heterostructure engineering. These approaches have notably improved the photocurrent densities for hydrogen production, achieving levels comparable to those of conventional heavy-metal-based counterparts. Finally, this review concludes by addressing the present challenges and future prospects of these QDs, underlining crucial steps for their practical applications in solar hydrogen production.

Spectrally narrow band-edge photoluminescence from AgInS2-based core/shell quantum dots for electroluminescence applications

This study presents a facile synthesis of cadmium-free ternary and quaternary quantum dots (QDs) and their application to light-emitting diode (LED) devices. AgInS2 ternary QDs, developed as a substitute for cadmium chalcogenide QDs, exhibited spectrally broad photoluminescence due to intrinsic defect levels. Our group has successfully achieved narrow band-edge PL by a coating with gallium sulfide shell. Subsequently, an intrinsic difficulty in the synthesis of multinary compound QDs, which often results in unnecessary byproducts, was surmounted by a new approach involving the nucleation of silver sulfide followed by material conversion to the intended composition (silver indium gallium sulfide). By fine-tuning this reaction and bringing the starting material closer to stoichiometric compositional ratios, atom economy was further improved. These QDs have been tested in LED applications, but the standard device encountered a significant defective emission that would have been eliminated by the gallium sulfide shells. This problem is addressed by introducing gallium oxide as a new electron transport layer.

Flexible and Stretchable Light-Emitting Diodes and Photodetectors for Human-Centric Optoelectronics

Optoelectronic devices with unconventional form factors, such as flexible and stretchable light-emitting or photoresponsive devices, are core elements for the next-generation human-centric optoelectronics. For instance, these deformable devices can be utilized as closely fitted wearable sensors to acquire precise biosignals that are subsequently uploaded to the cloud for immediate examination and diagnosis, and also can be used for vision systems for human-interactive robotics. Their inception was propelled by breakthroughs in novel optoelectronic material technologies and device blueprinting methodologies, endowing flexibility and mechanical resilience to conventional rigid optoelectronic devices. This paper reviews the advancements in such soft optoelectronic device technologies, honing in on various materials, manufacturing techniques, and device design strategies. We will first highlight the general approaches for flexible and stretchable device fabrication, including the appropriate material selection for the substrate, electrodes, and insulation layers. We will then focus on the materials for flexible and stretchable light-emitting diodes, their device integration strategies, and representative application examples. Next, we will move on to the materials for flexible and stretchable photodetectors, highlighting the state-of-the-art materials and device fabrication methods, followed by their representative application examples. At the end, a brief summary will be given, and the potential challenges for further development of functional devices will be discussed as a conclusion.

Color Revolution: Prospects and Challenges of Quantum-Dot Light-Emitting Diode Display Technologies

Light-emitting diodes (LEDs) based on colloidal quantum-dots (QDs) such as CdSe, InP, and ZnSeTe feature a unique advantage of narrow emission linewidth of ≈20 nm, which can produce highly accurate colors, making them a highly promising technology for the realization of displays with Rec. 2020 color gamut. With the rapid development in the past decades, the performances of red and green QLEDs have been remarkably improved, and their efficiency and lifetime can almost meet industrial requirements. However, the industrialization of QLED displays still faces many challenges; for example, (1) the device mechanisms including the charge injection/transport/leakage, exciton quenching, and device degradation are still unclear, which fundamentally limit QLED performance improvement; (2) the blue performances including the efficiency, chromaticity, and stability are relatively low, which are still far from the requirements of practical applications; (3) the color patterning processes including the ink-jet printing, transfer printing, and photolithography are still immature, which restrict the manufacturing of high resolution full-color QLED displays. Here, the recent advancements attempting to address the above challenges of QLED displays are specifically reviewed. After a brief overview of QLED development history, device structure/principle, and performances, the main focus is to investigate the recent discoveries on device mechanisms with an emphasis on device degradation. Then recent progress is introduced in blue QLEDs and color patterning. Finally, the opportunities, challenges, solutions, and future research directions of QLED displays are summarized.

Dual-Resonance Nanostructures for Color Downconversion of Colloidal Quantum Emitters

We present a dual-resonance nanostructure made of a titanium dioxide (TiO2) subwavelength grating to enhance the color downconversion efficiency of CdxZn1-xSeyS1-y colloidal quantum dots (QDs) emitting at ∼530 nm when excited with a blue light at ∼460 nm. A large mode volume can be created within the QD layer by the hybridization of the grating resonances and waveguide modes, resulting in large absorption and emission enhancements. Particularly, we achieved polarized light emission with a maximum photoluminescence enhancement of ∼140 times at a specific angular direction and a total enhancement of ∼34 times within a 0.55 numerical aperture (NA) of the collecting objective. The enhancement encompasses absorption, Purcell and outcoupling enhancements. We achieved a total absorption of 35% for green QDs with a remarkably thin color conversion layer of ∼400 nm. This work provides a guideline for designing large-volume cavities for absorption/fluorescence enhancement in microLED display, detector, or photovoltaic applications.

Integrated PbS Colloidal Quantum Dot Photodiodes on Silicon Nitride Waveguides

Colloidal quantum dots (QDs) have become a versatile optoelectronic material for emitting and detecting light that can overcome the limitations of a range of electronic and photonic technology platforms. Photonic integrated circuits (PICs), for example, face the persistent challenge of combining active materials with passive circuitry ideally suited for guiding light. Here, we demonstrate the integration of photodiodes (PDs) based on PbS QDs on silicon nitride waveguides (WG). Analyzing planar QDPDs first, we argue that the main limitation WG-coupled QDPDs face is detector saturation induced by the high optical power density of the guided light. Using the cladding thickness and waveguide width as design parameters, we mitigate this issue, and we demonstrate WG-QDPDs with an external quantum efficiency of 67.5% at 1275 nm that exhibit a linear photoresponse for input powers up to 400 nW. In the next step, we demonstrate a compact infrared spectrometer by integrating these WG-QDPDs on the output channels of an arrayed waveguide grating demultiplexer. This work provides a path toward a low-cost PD solution for PICs, which are attractive for large-scale production.

Recent Advances in Patterning Strategies for Full-Color Perovskite Light-Emitting Diodes

Metal halide perovskites have emerged as promising light-emitting materials for next-generation displays owing to their remarkable material characteristics including broad color tunability, pure color emission with remarkably narrow bandwidths, high quantum yield, and solution processability. Despite recent advances have pushed the luminance efficiency of monochromic perovskite light-emitting diodes (PeLEDs) to their theoretical limits, their current fabrication using the spin-coating process poses limitations for fabrication of full-color displays. To integrate PeLEDs into full-color display panels, it is crucial to pattern red-green-blue (RGB) perovskite pixels, while mitigating issues such as cross-contamination and reductions in luminous efficiency. Herein, we present state-of-the-art patterning technologies for the development of full-color PeLEDs. First, we highlight recent advances in the development of efficient PeLEDs. Second, we discuss various patterning techniques of MPHs (i.e., photolithography, inkjet printing, electron beam lithography and laser-assisted lithography, electrohydrodynamic jet printing, thermal evaporation, and transfer printing) for fabrication of RGB pixelated displays. These patterning techniques can be classified into two distinct approaches: in situ crystallization patterning using perovskite precursors and patterning of colloidal perovskite nanocrystals. This review highlights advancements and limitations in patterning techniques for PeLEDs, paving the way for integrating PeLEDs into full-color panels.

Wafer-scale patterning of high-resolution quantum dot films with a thickness over 10 μm for improved color conversion

Quantum dots (QDs) are promising color conversion materials for efficient full-color micro light-emitting diode (micro-LED) displays owing to their high color purity and wide color gamut. However, achieving high-resolution QD patterns with enough thickness for efficient color conversion is challenging. Here, we demonstrate a facile and compatible approach by combining replicate molding, plasma etching and transfer printing to produce QD patterns with a sufficient thickness over ten micrometers in a wide range of resolutions. Our technique can remarkably simplify the preparation of QD inks and minimize optical damage to QD materials. The pixel resolution and thickness of QD patterns can be controlled by well-defining the microstructures of the molding template and the etching process. The transfer printing process allows QD patterns to be assembled sequentially onto a receiving substrate, which will further improve the original pixel resolution and avoid repetitive optical damage to QDs during the patterning process. Consequently, various QD patterns can be fabricated in this work, including perovskite quantum dot (PQD) patterns with a pixel resolution of up to 669 pixels per inch (ppi) and a maximum thickness of up to 19.74 μm, a wafer-scale high-resolution PQD pattern with sufficient thickness on a flexible substrate, and a dual-color pattern comprising green PQDs and red CdSe QDs. Furthermore, these fabricated QD films with a thickness of over 10 μm show improved color conversion when integrated onto a blue micro-LED, revealing the potential of our technique for full-color micro-LED displays.

Ultrathin Self-Powered Heavy-Metal-Free Cu-In-Se Quantum Dot Photodetectors for Wearable Health Monitoring

Mechanically deformable photodetectors (PDs) are key device components for wearable health monitoring systems based on photoplethysmography (PPG). Achieving high detectivity, fast response time, and an ultrathin form factor in the PD is highly needed for next-generation wearable PPG systems. Self-powered operation without a bulky power-supply unit is also beneficial for point-of-care application. Here, we propose ultrathin self-powered PDs using heavy-metal-free Cu-In-Se quantum dots (QDs), which enable high-performance wearable PPG systems. Although the light-absorbing QD layer is extremely thin (∼40 nm), the developed PD exhibits excellent performance (specific detectivity: 2.10 × 1012 Jones, linear dynamic range: 102 dB, and spectral range: 250-1050 nm at zero bias), which is comparable to that of conventional rigid QD-PDs employing thick Pb-chalcogenide QD layers. This is attributed to material and device strategies─materials that include Cu-In-Se QDs, a MoS2-nanosheet-blended poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) hole transport layer, a ZnO nanoparticle electron transport layer, Ag and ITO electrodes, and an ultrathin form factor (∼120 nm except the electrodes) that enable excellent mechanical deformability. These allow the successful application of QD-PDs to a wearable system for real-time PPG monitoring, expanding their potential in the field of mobile bioelectronics.

Patterning Quantum Dots via Photolithography: A Review

Pixelating patterns of red, green, and blue quantum dots (QDs) is a critical challenge for realizing high-end displays with bright and vivid images for virtual, augmented, and mixed reality. Since QDs must be processed from a solution, their patterning process is completely different from the conventional techniques used in the organic light-emitting diode and liquid crystal display industries. Although innovative QD patterning technologies are being developed, photopatterning based on the light-induced chemical conversion of QD films is considered one of the most promising methods for forming micrometer-scale QD patterns that satisfy the precision and fidelity required for commercialization. Moreover, the practical impact will be significant as it directly exploits mature photolithography technologies and facilities that are widely available in the semiconductor industry. This article reviews recent progress in the effort to form QD patterns via photolithography. The review begins with a general description of the photolithography process. Subsequently, different types of photolithographical methods applicable to QD patterning are introduced, followed by recent achievements using these methods in forming high-resolution QD patterns. The paper also discusses prospects for future research directions.

Current Confinement Effect on the Performance of Blue Light Micro-LEDs with 10 μm Dimension

The current confinement effect on the micro-LED (μLED) with a 10 μm dimension was simulated using SpeCLED software. In this study, three p-contact sizes were considered: 2 μm × 2 μm, 5 μm × 5 μm, and 8 μm × 8 μm dimensions for μLEDs with a 10 μm dimension. According to the simulation data, the highest external quantum efficiency (EQE) of 13.24% was obtained with a 5 μm × 5 μm contact size. The simulation data also showed that the μLEDs with narrow contact sizes experienced higher operating temperatures due to the current crowding effect. The experimental data revealed a red-shift effect in narrow contact sizes, indicating higher heat generation in those devices. As the contact sizes increased from 2 to 8 μm, the turn-on voltage decreased due to lower equivalent resistance. Additionally, the leakage current increased from 44 pA to 1.6 nA at a reverse voltage of -5 V. The study found that the best performance was achieved with a contact ratio of 0.5, which resulted in the highest EQE at 9.95%. This superior performance can be attributed to the better current confinement of the μLED compared to the μLED with a contact ratio of 0.8, resulting in lower leakage current and improved current spreading when compared to the μLED with a contact ratio of 0.2.

Quantum shells versus quantum dots: suppressing Auger recombination in colloidal semiconductors

Colloidal semiconductor nanocrystals (NCs) have attracted a great deal of attention in recent decades. The quantum efficiency of many optoelectronic processes based on these nanomaterials, however, declines with increasing optical or electrical excitation intensity. This issue is caused by Auger recombination of multiple excitons, which converts the NC energy into excess heat, whereby reducing the efficiency and lifespan of NC-based devices, including lasers, photodetectors, X-ray scintillators, and high-brightness LEDs. Recently, semiconductor quantum shells (QSs) have emerged as a viable nanoscale architecture for the suppression of Auger decay. The spherical-shell geometry of these nanostructures leads to a significant reduction of Auger decay rates, while exhibiting a near unity photoluminescence quantum yield. Here, we compare the optoelectronic properties of quantum shells against other low-dimensional semiconductors and discuss their emerging opportunities in solid-state lighting and energy-harvesting applications.

Direct Optical Patterning of Quantum Dots: One Strategy, Different Chemical Processes

Patterning, stability, and dispersion of the semiconductor quantum dots (scQDs) are three issues strictly interconnected for successful device manufacturing. Recently, several authors adopted direct optical patterning (DOP) as a step forward in photolithography to position the scQDs in a selected area. However, the chemistry behind the stability, dispersion, and patterning has to be carefully integrated to obtain a functional commercial device. This review describes different chemical strategies suitable to stabilize the scQDs both at a single level and as an ensemble. Special attention is paid to those strategies compatible with direct optical patterning (DOP). With the same purpose, the scQDs' dispersion in a matrix was described in terms of the scQD surface ligands' interactions with the matrix itself. The chemical processes behind the DOP are illustrated and discussed for five different approaches, all together considering stability, dispersion, and the patterning itself of the scQDs.

Design Rules for Obtaining Narrow Luminescence from Semiconductors Made in Solution

Solution-processed semiconductors are in demand for present and next-generation optoelectronic technologies ranging from displays to quantum light sources because of their scalability and ease of integration into devices with diverse form factors. One of the central requirements for semiconductors used in these applications is a narrow photoluminescence (PL) line width. Narrow emission line widths are needed to ensure both color and single-photon purity, raising the question of what design rules are needed to obtain narrow emission from semiconductors made in solution. In this review, we first examine the requirements for colloidal emitters for a variety of applications including light-emitting diodes, photodetectors, lasers, and quantum information science. Next, we will delve into the sources of spectral broadening, including "homogeneous" broadening from dynamical broadening mechanisms in single-particle spectra, heterogeneous broadening from static structural differences in ensemble spectra, and spectral diffusion. Then, we compare the current state of the art in terms of emission line width for a variety of colloidal materials including II-VI quantum dots (QDs) and nanoplatelets, III-V QDs, alloyed QDs, metal-halide perovskites including nanocrystals and 2D structures, doped nanocrystals, and, finally, as a point of comparison, organic molecules. We end with some conclusions and connections, including an outline of promising paths forward.

Characterizing the Semiconductor Nanocrystal Surface through Chemical Reactivity

ConspectusMany desirable and undesirable properties of semiconductor nanocrystals (NCs) can be traced to the NC surface due to the large surface-to-volume ratio. Therefore, precise control of the NC surface is imperative to achieve NCs with the desired qualities. Ligand-specific reactivity and surface heterogeneity make it difficult to accurately control and tune the NC surface. Without a molecular-level appreciation of the NC surface chemistry, modulating the NC surface is impossible and the risk of introducing deleterious surface defects is imminent. To gain a more comprehensive understanding of the surface reactivity, we have utilized a variety of spectroscopic techniques and analytical methods in concert.This Account describes our use of robust characterization techniques and ligand exchange reactions in effort to establish a molecular-level understanding of NC surface reactivity. The utility of NCs in target applications such as catalysis and charge transfer hangs on precise tunability of NC ligands. Modulating the NC surface requires the necessary tools to monitor chemical reactions. One commonly utilized analytical method to achieve targeted surface compositions is ¹H nuclear magnetic resonance (NMR) spectroscopy. Here we describe our use of ¹H NMR spectroscopy to monitor chemical reactions at CdSe and PbS NC surfaces to identify ligand specific reactivity. However, seemingly straightforward ligand exchange reactions can vary widely depending on the NC materials and anchoring group. Some non-native X-type ligands will irreversibly displace native ligands. Other ligands exist in equilibrium with native ligands. Depending on the application, it is important to understand the nature of exchange reactions. This level of understanding can be obtained by extracting exchange ratios, exchange equilibrium, and reaction mechanism information from ¹H NMR spectroscopy to establish precise NC reactivity.Reactivity that occurs through multiple, parallel ligand exchange mechanisms can involve both the liberation of metal-based Z-type ligands in addition to reactivity of X-type ligands. In these reactions, ¹H NMR spectroscopy fails to discern between an X-type oleate or a Z-type Pb(oleate)₂ because only the alkene resonance of the organic constituent is probed by this method. Multiple, parallel reaction pathways occur when thiol ligands are introduced to oleate-capped PbS NCs. This necessitated the use of synergistic characterization methods including ¹H NMR spectroscopy, Fourier-transform infrared (FTIR) spectroscopy, and inductively coupled plasma mass spectrometry (ICP-MS) to characterize both surface-bound and liberated ligands.Similar analytical methods have been employed to probe the NC topology, which is an important, but often overlooked, component to NC reactivity given the facet-specific reactivity of PbS NCs. Through the tandem use of NMR spectroscopy and ICP-MS, we have monitored the liberation of Pb(oleate)₂ as an L-type ligand is titrated to the NC to determine the quantity and equilibrium of Z-type ligands. By studying a variety of NC sizes, we correlated the number of liberated ligands with the size-dependent topology of PbS NCs.Lastly, we incorporate redox-active chemical probes into our toolbox to study NC surface defects. We describe how the site-specific reactivity and relative energetics of redox-active surface-based defects are elucidated using redox probes and show that this reactivity is highly dependent on the surface composition. This Account is designed to encourage readers to consider the necessary characterization techniques needed establish a molecular-level understanding of NC surfaces in their own work.

Thermal Effect on Photoelectrochemical Water Splitting Toward Highly Solar to Hydrogen Efficiency

Photoelectrochemical (PEC) hydrogen production is an emerging technology that uses renewable solar light aimed to establish a sustainable carbon-neutral society. The barriers to commercialization are low efficiency and high cost. To date, researchers have focused on materials and systems. However, recent studies have been conducted to utilize thermal effects in PEC hydrogen production. This Review provides a fresh perspective to utilize the thermal effects for PEC performance enhancement while delineating the underlying principles and equations associated with efficiency. The fundamentals of the thermal effect on the PEC system are summarized from various perspectives: kinetics, thermodynamics, and empirical equations. Based on this, materials are classified as plasmonic metals, quantum dot-based semiconductors, and photothermal organic materials, which have an inherent response to photothermal irradiation. Finally, the economic viability and challenges of these strategies for PEC are explained, which can pave the way for the future progress in the field.

Degradation phenomena of quantum dot light-emitting diodes induced by high electric field

Quantum dots possess exceptional optoelectronic properties, such as narrow bandwidth, controllable wavelength, and compatibility with solution-based processing. However, for efficient and stable operation in electroluminescence mode, several issues require resolution. Particularly, as device dimensions decrease, a higher electric field may be applied through next-generation quantum dot light-emitting diode (QLED) devices, which could further degrade the device. In this study, we conduct a systematic analysis of the degradation phenomena of a QLED device induced by a high electric field, using scanning probe microscopy (SPM) and transmission electron microscopy (TEM). We apply a local high electric field to the surface of a QLED device using an atomic force microscopy (AFM) tip, and we investigate changes in morphology and work function in the Kelvin probe force microscopy mode. After the SPM experiments, we perform TEM measurements on the same degraded sample area affected by the electric field of the AFM tip. The results indicate that a QLED device could be mechanically degraded by a high electric field, and work function changes significantly in degraded areas. In addition, the TEM measurements reveal that In ions migrate from the indium tin oxide (ITO) bottom electrode to the top of the QLED device. The ITO bottom electrode also deforms significantly, which could induce work function variation. The systematic approach adopted in this study can provide a suitable methodology for investigating the degradation phenomena of various optoelectronic devices.

Orthogonal Trichromatic Upconversion with High Color Purity in Core-Shell Nanoparticles for a Full-Color Display

Materials with tunable emission colors has attracted increasing interest in both fundamental research and applications. As a key member of light-emitting materials family, lanthanide doped upconversion nanoparticles (UCNPs) have been intensively demonstrated to emit light in any color upon near-infrared excitation. However, realizing the trichromatic emission in UCNPs with a fixed composition remains a great challenge. Here, without excitation pulsed modulation and three different near-infrared pumping, we report an experimental design to fine-control emission in the full color gamut from core-shell-structured UCNPs by manipulating the energy migration through dual-channel pump scheme. We also demonstrate their potential application in full-color display. These findings may benefit the future development of convenient and versatile optical methos for multicolor tuning and open up the possibility of constructing full-color volumetric display systems with high spatiotemporal resolution.

Direct Photo-Patterning of Efficient and Stable Quantum Dot Light-Emitting Diodes via Light-Triggered, Carbocation-Enabled Ligand Stripping

Next generation displays based on quantum dot light-emitting diodes (QLEDs) require robust patterning methods for quantum dot layers. However, existing patterning methods mostly yield QLEDs with performance far inferior to the state-of-the-art individual devices. Here, we report a light-triggered, carbocation-enabled ligand stripping (CELS) approach to pattern QLEDs with high efficiency and stability. During CELS, photogenerated carbocations from triphenylmethyl chlorides remove native ligands of quantum dots, thereby producing patterns at microscale precision. Chloride anions passivate surface defects and endow patterned quantum dots with preserved photoluminescent quantum yields. It works for both cadmium-based and heavy-metal-free quantum dots. CELS-patterned QLEDs show remarkable external quantum efficiencies (19.1%, 17.5%, 12.0% for red, green, blue, respectively) and a long operation lifetime (T₉₅ at 1000 nits up to 8700 h). Both are among the highest for patterned QLEDs and approach the records for nonpatterned devices, which makes CELS promising for building high-performance QLED displays and related integrated devices.

Quantum Dots, Passivation Layer and Cocatalysts for Enhanced Photoelectrochemical Hydrogen Production

Solar-driven photoelectrochemical (PEC) hydrogen production is one potential pathway to establish a carbon-neutral society. Nowadays, quantum dots (QDs)-sensitized semiconductors have emerged as promising materials for PEC hydrogen production due to their tunable bandgap by size or morphology control, displaying excellent optical and electrical properties. Nevertheless, they still suffer from anodic corrosion during long-term cycling, offering poor stability. This Review discussed advancements to improve long-term stability of QDs particularly in terms of cocatalysts and passivation layers. The working principle of PEC cells was reviewed, along with all important configurations adopted over recent years. The equations to assess PEC performance were also described. A greater emphasized was placed on QDs and incorporation of cocatalysts or passivation layers that could enhance the PEC performance by influencing the charge transfer and surface recombination processes.

Recent Progresses in Solution-Processed Tandem Organic and Quantum Dots Light-Emitting Diodes

Solution processes have promising advantages of low manufacturing cost and large-scale production, potentially applied for the fabrication of organic and quantum dot light-emitting diodes (OLEDs and QLEDs). To meet the expected lifespan of OLEDs/QLEDs in practical display and lighting applications, tandem architecture by connecting multiple light-emitting units (LEUs) through a feasible intermediate connection layer (ICL) is preferred. However, the combination of tandem architecture with solution processes is still limited by the choices of obtainable ICLs due to the unsettled challenges, such as orthogonal solubility, surface wettability, interfacial corrosion, and charge injection. This review focuses on the recent progresses of solution-processed tandem OLEDs and tandem QLEDs, covers the design and fabrication of various ICLs by solution process, and provides suggestions on the future challenges of corresponding materials and devices, which are anticipated to stimulate the exploitation of the emerging light technologies.

Direct in situ photolithography of perovskite quantum dots based on photocatalysis of lead bromide complexes

Photolithography has shown great potential in patterning solution-processed nanomaterials for integration into advanced optoelectronic devices. However, photolithography of perovskite quantum dots (PQDs) has so far been hindered by the incompatibility of perovskite with traditional optical lithography processes where lots of solvents and high-energy ultraviolet (UV) light exposure are required. Herein, we report a direct in situ photolithography technique to pattern PQDs based on the photopolymerization catalyzed by lead bromide complexes. By combining direct photolithography with in situ fabrication of PQDs, this method allows to directly photolithograph perovskite precursors, avoiding the complicated lift-off processes and the destruction of PQDs by solvents or high-energy UV light, as PQDs are produced after lithography exposure. We further demonstrate that the thiol-ene free-radical photopolymerization is catalyzed by lead bromide complexes in the perovskite precursor solution, while no external initiators or catalysts are needed. Using direct in situ photolithography, PQD patterns with high resolution up to 2450 pixels per inch (PPI), excellent fluorescence uniformity, and good stability, are successfully demonstrated. This work opens an avenue for non-destructive direct photolithography of high-efficiency light-emitting PQDs, and potentially expands their application in various integrated optoelectronic devices.

Perovskite nanomaterials may suffer degradation during conventional photolithography. Here, the authors report a non-destructive method for patterning perovskite quantum dots based on direct photopolymerization catalyzed by lead bromide complexes.

Freestanding High-Resolution Quantum Dot Color Converters with Small Pixel Sizes

Designing the next generation of high-resolution displays requires high pixel density per area and small pixel sizes without compromising the optical quality. Quantum dots (QDs) have been demonstrated as a promising material system for down-conversion of blue emission as they provide pure colors on the wide color gamut. However, for high color-conversion efficiency, the required QD film thickness has not been compatible with small pixel sizes. In this work, we develop a new type of freestanding QD-based color converter for efficient optical down-conversion from inorganic blue light-emitting diodes (LEDs) in a color-by-blue configuration. CdSe/ZnS core-shell QDs in a UV-curable polymer matrix are encapsulated within cavities formed by patterning and bonding a pair of patterned quartz substrates. By controlling the required QD thickness and the pixel size independently, we demonstrate freestanding monochrome red and green converters with small pixel sizes down to 5 × 5 μm² and a high resolution of >3600 ppi. The optical studies show that the QD film thickness required for efficient color conversion can be successfully realized even for the small pixel sizes. We further combine green and red pixels in a single converter to achieve white emission when combined with blue LED emission. The QD color converter design and processing are decoupled from the LED fabrication and can be easily scaled to wafer-size integration with arbitrary pixel sizes for QD-based RGB displays with ultrahigh resolution.

Reduced Graphene Oxide Quantum Dot Light Emitting Diodes Fabricated Using an Ultraviolet Light Emitting Diode Photolithography Technique

Graphene quantum dots usually suffer from serious fluorescence quenching in aggregates and the solid state due to easy agglomeration and aggregation-induced quenching, which seriously restrict their practical applications. An ingenious strategy to kill three birds with one stone, the ultraviolet (UV) photolithography technique, was studied, and blue-emitting reduced graphene oxide quantum dot (rGOQD)-based light emitting diodes (LEDs) with efficient solid state emission were first fabricated using UV photolithography. First, rGOQDs were prepared by the in situ photoreduction of GOQDs by using the photoinitiator phenyl bis(2,4,6-trimethylbenzoyl)phosphine oxide with 395 nm UV LED exposure. Furthermore, rGOQD/photoresist patterns were prepared under the same conditions. Meanwhile, the in situ photoreduction of GO in the aforementioned photoresist to rGO was realized by UV photolithography to improve the conductivity of the rGOQD/photoresist films. Additionally, the in situ photoreduction of GOQDs in different surroundings was studied, with the results showing that GOQDs are more easily photoreduced in ionic liquids and that the photoluminescence spectrum obtained for rGOQDs exhibits a 70 nm blueshift with a narrow full-width at half-maximum compared to GOQDs.

Ultrahigh-resolution full-color perovskite nanocrystal patterning for ultrathin skin-attachable displays

High-definition red/green/blue (RGB) pixels and deformable form factors are essential for the next-generation advanced displays. Here, we present ultrahigh-resolution full-color perovskite nanocrystal (PeNC) patterning for ultrathin wearable displays. Double-layer transfer printing of the PeNC and organic charge transport layers is developed, which prevents internal cracking of the PeNC film during the transfer printing process. This results in RGB pixelated PeNC patterns of 2550 pixels per inch (PPI) and monochromic patterns of 33,000 line pairs per inch with 100% transfer yield. The perovskite light-emitting diodes (PeLEDs) with transfer-printed active layers exhibit outstanding electroluminescence characteristics with remarkable external quantum efficiencies (15.3, 14.8, and 2.5% for red, green, and blue, respectively), which are high compared to the printed PeLEDs reported to date. Furthermore, double-layer transfer printing enables the fabrication of ultrathin multicolor PeLEDs that can operate on curvilinear surfaces, including human skin, under various mechanical deformations. These results highlight that PeLEDs are promising for high-definition full-color wearable displays.

Advances in Flexible Organic Photodetectors: Materials and Applications

Future electronics will need to be mechanically flexible and stretchable in order to enable the development of lightweight and conformal applications. In contrast, photodetectors, an integral component of electronic devices, remain rigid, which prevents their integration into everyday life applications. In recent years, significant efforts have been made to overcome the limitations of conventional rigid photodetectors, particularly their low mechanical deformability. One of the most promising routes toward facilitating the fabrication of flexible photodetectors is to replace conventional optoelectronic materials with nanomaterials or organic materials that are intrinsically flexible. Compared with other functional materials, organic polymers and molecules have attracted more attention for photodetection applications due to their excellent photodetection performance, cost-effective solution-fabrication capability, flexible design, and adaptable manufacturing processes. This article comprehensively discusses recent advances in flexible organic photodetectors in terms of optoelectronic, mechanical properties, and hybridization with other material classes. Furthermore, flexible organic photodetector applications in health-monitoring sensors, X-ray detection, and imager devices have been surveyed.

Quantum Mechanical Analysis Based on Perturbation Theory of CdSe/ZnS Quantum-Dot Light-Emission Properties

A simulation of quantum dot (QD) energy levels was designed to reproduce a quantum mechanical analytic method based on perturbation theory. A Schrödinger equation describing an electron-hole pair in a QD was solved, in consideration of the heterogeneity of the material parameters of the core and shell. The equation was solved numerically using single-particle basis sets to obtain the eigenstates and energies. This approach reproduced an analytic solution based on perturbation theory, while the calculation was performed using a numerical method. Owing to the effectiveness of the method, QD behavior according to the core diameter and external electric field intensity could be investigated reliably and easily. A 9.2 nm diameter CdSe/ZnS QD with a 4.2 nm diameter core and 2.5 nm thick shell emitted a 530 nm green light, according to an analysis of the effects of core diameter on energy levels. A 4 nm redshift at 5.4×105 V/cm electric field intensity was found while investigating the effects of external electric field on energy levels. These values agree well with previously reported experimental results. In addition to the energy levels and light emission wavelengths, the spatial distributions of wavefunctions were obtained. This analysis method is widely applicable for studying QD characteristics with varying structure and material compositions and should aid the development of high-performance QD technologies.

Direct Patterning of Colloidal Nanocrystals via Thermally Activated Ligand Chemistry

Precise patterning with microscale lateral resolution and widely tunable heights is critical for integrating colloidal nanocrystals into advanced optoelectronic and photonic platforms. However, patterning nanocrystal layers with thickness above 100 nm remains challenging for both conventional and emerging direct photopatterning methods, due to limited light penetration depths, complex mechanical and chemical incompatibilities, and others. Here, we introduce a direct patterning method based on a thermal mechanism, namely, the thermally activated ligand chemistry (or TALC) of nanocrystals. The ligand cross-linking or decomposition reactions readily occur under local thermal stimuli triggered by near-infrared lasers, affording high-resolution and nondestructive patterning of various nanocrystals under mild conditions. Patterned quantum dots fully preserve their structural and photoluminescent quantum yields. The thermal nature allows for TALC to pattern over 10 μm thick nanocrystal layers in a single step, far beyond those achievable in other direct patterning techniques, and also supports the concept of 2.5D patterning. The thermal chemistry-mediated TALC creates more possibilities in integrating nanocrystal layers in uniform arrays or complex hierarchical formats for advanced capabilities in light emission, conversion, and modulation.

Direct patterning of colloidal quantum dots with adaptable dual-ligand surface

Colloidal quantum dots (QDs) stand at the forefront of a variety of photonic applications given their narrow spectral bandwidth and near-unity luminescence efficiency. However, integrating luminescent QD films into photonic devices without compromising their optical or transport characteristics remains challenging. Here we devise a dual-ligand passivation system comprising photocrosslinkable ligands and dispersing ligands to enable QDs to be universally compatible with solution-based patterning techniques. The successful control over the structure of both ligands allows the direct patterning of dual-ligand QDs on various substrates using commercialized photolithography (i-line) or inkjet printing systems at a resolution up to 15,000 pixels per inch without compromising the optical properties of the QDs or the optoelectronic performance of the device. We demonstrate the capabilities of our approach for QD-LED applications. Our approach offers a versatile way of creating various structures of luminescent QDs in a cost-effective and non-destructive manner, and could be implemented in nearly all commercial photonics applications where QDs are used.

Effects of Mono- and Bifunctional Surface Ligands of Cu-In-Se Quantum Dots on Photoelectrochemical Hydrogen Production

Semiconductor nanocrystal quantum dots (QDs) are promising materials for solar energy conversion because of their bandgap tunability, high absorption coefficient, and improved hot-carrier generation. CuInSe₂ (CISe)-based QDs have attracted attention because of their low toxicity and wide light-absorption range, spanning visible to near-infrared light. In this work, we study the effects of the surface ligands of colloidal CISe QDs on the photoelectrochemical characteristics of QD-photoanodes. Colloidal CISe QDs with mono- and bifunctional surface ligands are prepared and used in the fabrication of type-II heterojunction photoanodes by adsorbing QDs on mesoporous TiO₂. QDs with monofunctional ligands are directly attached on TiO₂ through partial ligand detachment, which is beneficial for electron transfer between QDs and TiO₂. In contrast, bifunctional ligands bridge QDs and TiO₂, increasing the amount of QD adsorption. Finally, photoanodes fabricated with oleylamine-passivated QDs show a current density of ~8.2 mA/cm², while those fabricated with mercaptopropionic-acid-passivated QDs demonstrate a current density of ~6.7 mA/cm² (at 0.6 V_RHE under one sun illumination). Our study provides important information for the preparation of QD photoelectrodes for efficient photoelectrochemical hydrogen generation.

Enhancing oxygen/moisture resistance of quantum dots by short-chain, densely cross-linked silica glass network

Quantum dots (QDs) are facing significant photoluminescence degradation in moisture environment. In QDs-silicone composites, the poor water resistance of silicone matrix makes it easy for water and oxygen molecules to erode QDs. To tackle this issue, we proposed a new QDs protection strategy by introducing short-chain silica precursors onto the QDs' surface, so that a dense silica passivation layer could be formed onto the QDs nanoparticles. Sol-gel method based on 3-aminopropyl triethoxysilane (APTES), 3-mercaptopropyl trimethoxysilane (MPTMS), and 3-mercaptopropyl triethoxysilane (MPTES) were adopted to prepare the uniform and crack-free QDs-silica glass (QD-glass). Because of the crosslinking of short-chain precursors, the formed silica glass possesses 38.6% smaller pore width and 68.6% lower pore volume than silicone, indicating its denser cross-linked network surrounding QDs. After 360 h water immersion, the QDs-glass demonstrated a 6% enhancement in red-light peak intensity, and maintained a stable full width at half maximum (FWHM) and peak wavelength, proving its excellent water-resistant ability. However, the conventional QDs-silicone composites not only showed a decrease of 75.3% in red-light peak intensity, but also a broadened FWHM and a redshifted peak wavelength after water immersion. QDs-glass also showed superior photostability after 132 h exposure to blue light. Red-light peak intensity of QDs-glass remained 87.3% of the initial while that of QDs-silicone decreased to 19.8%. And the intensity of QDs-glass dropped to 62.3% of that under 20 °C after thermal treatment of 160 °C. Besides, under increasing driving currents, the light conversion efficiency drop of QDs-glass is only one fifth that of QDs-silicone. Based on the QDs-glass, the white light-emitting diodes was achieved with a high luminous efficiency of 126.5 lm W^-1and a high color rendering index of 95.4. Thus, the newly proposed QD-glass has great significance in guaranteeing the working reliability of QDs-converted devices against moisture and high-power environment.

Spectra Stable Quantum Dots Enabled by Band Engineering for Boosting Electroluminescence in Devices

The band level landscape in quantum dots is of great significance toward achieving stable and efficient electroluminescent devices. A series of quantum dots with specific emission and band structure of the intermediate layer is designed, including rich CdS (R-CdS), thick ZnSe (T-ZnSe), thin ZnSe (t-ZnSe) and ZnCdS (R-ZnCdS) intermediate alloy shell layers. These quantum dots in QLEDs show superior performance, including maximum current efficiency, external quantum efficiencies and a T₅₀ lifetime (at 1000 cd/m²) of 47.2 cd/A, 11.2% and 504 h for R-CdS; 61.6 cd/A, 14.7% and 612 h for t-ZnSe; 70.5 cd/A, 16.8% and 924 h for T-ZnSe; and 82.0 cd/A, 19.6% and 1104 h for R-ZnCdS. Among them, the quantum dots with the ZnCdS interlayer exhibit deep electron confinement and shallow hole confinement capabilities, which facilitate the efficient injection and radiative recombination of carriers into the emitting layer. Furthermore, the optimal devices show a superior T₅₀ lifetime of more than 1000 h. The proposed novel methodology of quantum dot band engineering is expected to start a new way for further enhancing QLED exploration.

Materials and design strategies for stretchable electroluminescent devices

Stretchable displays have recently received increasing attention as input and/or output interfaces for next-generation human-friendly electronic systems. Stretchable electroluminescent (EL) devices are a core component of stretchable displays, and they can be classified into two types, structurally stretchable EL devices and intrinsically stretchable EL devices, according to the mechanism for achieving their stretchability. We herein present recent advances in materials and design strategies for stretchable EL devices. First, stretchable devices based on ultrathin EL devices are introduced. Ultrathin EL devices are mechanically flexible like thin paper, and they can become stretchable through various structural engineering methods, such as inducing a buckled structure, employing interconnects with stretchable geometries, and applying origami/kirigami techniques. Secondly, intrinsically stretchable EL devices can be fabricated by using inherently stretchable electronic materials. For example, light-emitting electrochemical cells and EL devices with a simpler structure using alternating current have been developed. Furthermore, novel stretchable semiconductor materials have been presented for the development of intrinsically stretchable light-emitting diodes. After discussing these two types of stretchable EL devices, we briefly discuss applications of deformable EL devices and conclude the review.

Bulk-like emission in the visible spectrum of colloidal LiYF4:Pr nanocrystals downsized to 10 nm

Though Pr³⁺ doped LiYF₄ (LiYF₄:Pr³⁺) bulk crystals are a well-known laser gain material with several radiative transitions, their nanocrystal counterparts have not been investigated with regards to these. Through downsizing to the nanoscale, novel applications are expected, especially in composite photonic devices. For example, nanocrystals in stable colloidal form with narrow size distribution are highly desirable to reduce scattering in such composites. Herein, we synthesized monodispersed LiYF₄:Pr³⁺ nanocrystals having a size of 10 nm resulting in colorless clear stable colloidal dispersions and conducted an extensive optical characterization for the first time. We observed unexpected yet intense emission with excited state lifetimes comparable to bulk crystals in the visible spectrum through excitation at 444 nm and 479 nm. In macroscopic bulk crystals, this emission is only exploitable through excitation of a different, subjacent energy level. A comprehensive comparison to the bulk crystals provides deeper insight into the excitation mechanism and performance of these nanocrystals. The presented results pave the way for developing application-oriented LiYF₄:Pr³⁺ nanocrystals as emitters with tailored properties for quantum optics or biomedical applications.

Full-Spectrum InP-Based Quantum Dots with Near-Unity Photoluminescence Quantum Efficiency

Photoluminescent color conversion by quantum dots (QDs) makes possible the formation of spectrum-on-demand light sources by combining blue LEDs with the light generated by a specific blend of QDs. Such applications, however, require a near-unity photoluminescence quantum efficiency since self-absorption magnifies disproportionally the impact of photon losses on the overall conversion efficiency. Here, we present a synthesis protocol for forming InP-based QDs with +90% quantum efficiency across the full visible spectrum from blue/cyan to red. The central features of our approach are as follows: (1) the formation of InP core QDs through one-batch-one-size reactions based on aminophosphine as the phosphorus precursor, (2) the introduction of a core/shell/shell InP/Zn(Se,S)/ZnS structure, and (3) the use of specific interfacial treatments, most notably the saturation of the ZnSe surface with zinc acetate prior to ZnS shell growth. Moreover, we adapted the composition of the Zn(Se,S) inner shell to attain the intended emission color while minimizing line broadening induced by the InP/ZnS lattice mismatch. The protocol is established by analysis of the QD composition and structure using multiple techniques, including solid-state nuclear magnetic resonance spectroscopy and Raman spectroscopy, and verified for reproducibility by having different researchers execute the same protocol. The realization of full-spectrum, +90% quantum efficiency will strongly facilitate research into light-matter interaction in general and luminescent color conversion in particular through InP-based QDs.

Beyond a Linker: The Role of Photochemistry of Crosslinkers in the Direct Optical Patterning of Colloidal Nanocrystals

Surface chemistry mediated direct optical patterning represents an emerging strategy for incorporating colloidal nanocrystals (NCs) in integrated optoelectronic platforms including displays and image sensors. However, the role of photochemistry of crosslinkers and other photoactive species in patterning remains elusive. Here we show the design of nitrene- and carbene-based photocrosslinkers can strongly affect the patterning capabilities and photophysical properties of NCs, especially quantum dots (QDs). Their role beyond physical linkers stems from structure-dictated electronic configuration, energy alignment and associated reaction kinetics and thermodynamics. Patterned QD layers with designed carbene-based crosslinkers fully preserve their photoluminescent and electroluminescent properties. Patterned light emitting diodes (QLEDs) show a maximum external quantum efficiency of ≈12 % and lifetime over 4800 h, among the highest for reported patterned QLEDs. These results would guide the rational design of photoactive species in NC patterning and create new possibilities in the monolithic integration of NCs in high-performance device platforms.

Highly Efficient Red Quantum Dot Light-Emitting Diodes by Balancing Charge Injection and Transport

Quantum dot light-emitting diodes (QLEDs) have promising commercial value and application prospects in the fields of displays and lighting. However, a charge-transfer imbalance always exists in the devices. In this work, the high-efficiency red QLEDs were obtained via employing the mixtures of poly[(9,9-dioctylfluorenyl-2,7-diyl)-alt-(4,4'-(N-(4-butylphenyl) (TFB) and 4,4'-bis(carbazole-9-yl)-1,1'-biphenyl (CBP) as hole-transport layers (HTLs) by solution processing. The optimized mixing concentration of CBP is 20 wt %. The corresponding red QLED exhibited a maximum luminance of 963 433 cd m^-2, a maximum current efficiency of 38.7 cd A^-1, an external quantum efficiency of 30.0%, a central wavelength of 628 nm with a narrow full width at half-maximum (fwhm) of 24 nm, and a 5-fold T₅₀ lifetime enhancement at an extremely high luminance of 200 000 cd m^-2. The characteristics of carrier-only devices with QD emissive layers (QD EMLs) and impedance characteristics of QLEDs demonstrate that these advances are chiefly ascribed to the more balanced charge transport and efficient hole-electron recombination in EML. We anticipate that our results could offer a low-cost and simple solution-processed method for preparing high-performance QLEDs.

Three Millennia of Nanocrystals

The broad deployment of nanotechnology and nanomaterials in modern society is increasing day by day to the point that some have seen in this process the transition from the Silicon Age to a new Nano Age. Nanocrystals─a distinct class of nanomaterials─are forecast to play a pivotal role in the next generation of devices such as liquid crystal displays, light-emitting diodes, lasers, and luminescent solar concentrators. However, it is not to be forgotten that this cutting-edge technology is rooted in empirical knowledge and craftsmanship developed over the millennia. This review aims to span the major applications in which nanocrystals were consistently employed by our forebears. Through an analysis of these examples, we show that the modern-age discoveries stem from multimillennial experience passed on from our proto-chemist ancestors to us.

Effects of Structural and Microstructural Features on the Total Scattering Pattern of Nanocrystalline Materials

Atomic- and nanometer-scale features of nanomaterials have a strong influence on their chemical and physical properties and a detailed description of these elements is a crucial step in their characterization. Total scattering methods, in real and reciprocal spaces, have been established as fundamental techniques to retrieve this information. Although the impact of microstructural features, such as defectiveness of different kinds, has been extensively studied in reciprocal space, disentangling these effects from size- and morphology-induced properties, upon downsizing, is not a trivial task. Additionally, once the experimental pattern is Fourier transformed to calculate the pair distribution function, the direct fingerprint of structural and microstructural features is severely lost and no modification of the histogram of interatomic distances derived therefrom is clearly discussed nor considered in the currently available protocols. Hereby, starting from atomistic models of a prototypical system (cadmium selenide), we simulate multiple effects on the atomic pair distribution function, obtained from reciprocal space patterns computed through the Debye scattering equation. Size and size dispersion effects, as well as different structures, morphologies, and their interplay with several kinds of planar defects, are explored, aiming at identifying the main (measurable and informative) fingerprints of these features on the total scattering pattern in real and reciprocal spaces, highlighting how, and how much, they become evident when comparing different cases. The results shown herein have general validity and, as such, can be further extended to other classes of nanomaterials.

Suppressing the Cation Exchange at the Core/Shell Interface of InP Quantum Dots by a Selenium Shielding Layer Enables Efficient Green Light-Emitting Diodes

Indium phosphide (InP) quantum dots (QDs) have demonstrated great potential for light-emitting diode (LED) application because of their excellent optical properties and nontoxicity. However, the over performance of InP QDs still lags behind that of CdSe QDs, and one of main reasons is that the Zn traps in InP lattices can be formed through the cation exchange in the ZnSe shell growth process. Herein, we realized highly luminescent InP/ZnSe/ZnS QDs by constructing Se-rich shielding layers on the surfaces of InP cores, which simultaneously protect the InP cores from the invasion of Zn²⁺ into InP lattices and facilitate the ZnSe shell growth via the reaction between Zn²⁺ precursors and Se^2- shielding layers. The as-synthesized green InP/ZnSe/ZnS QDs had a high photoluminescence quantum yield (PLQY) of up to 87%. The fabricated QLEDs present a peak external quantum efficiency of 6.2% with an improved efficiency roll-off at high luminance, which is 2 times higher than that of control devices.

Quantum Shells Boost the Optical Gain of Lasing Media

Auger decay of multiple excitons represents a significant obstacle to photonic applications of semiconductor quantum dots (QDs). This nonradiative process is particularly detrimental to the performance of QD-based electroluminescent and lasing devices. Here, we demonstrate that semiconductor quantum shells with an "inverted" QD geometry inhibit Auger recombination, allowing substantial improvements to their multiexciton characteristics. By promoting a spatial separation between multiple excitons, the quantum shell geometry leads to ultralong biexciton lifetimes (>10 ns) and a large biexciton quantum yield. Furthermore, the architecture of quantum shells induces an exciton-exciton repulsion, which splits exciton and biexciton optical transitions, giving rise to an Auger-inactive single-exciton gain mode. In this regime, quantum shells exhibit the longest optical gain lifetime reported for colloidal QDs to date (>6 ns), which makes this geometry an attractive candidate for the development of optically and electrically pumped gain media.

Wide color gamut white light-emitting diodes based on two-dimensional semiconductor nanoplatelets

II-VI colloidal semiconductor nanoplatelets (NPLs) are a kind of two-dimensional nanomaterial with uniform thickness at the atomic scale, thus leading to the characteristics of tunable emission wavelength and narrow bandwidth. Here, we report wide color gamut white light-emitting diodes (WLEDs) based on high-performance CdSe-based heterostructure NPLs. The narrow-band CdSe/CdS core/crown and CdSe/ZnCdS core/shell NPLs are chosen as green (∼521 nm) and red (∼653 nm) luminescent materials, respectively. They represent excellent PL properties, such as narrow linewidth, high quantum yields, and high photostability. Importantly, the further fabricated NPL-WLEDs exhibits an ultrawide color gamut covering up ∼141.7% of the NTSC standard in the CIE 1931 color space and excellent stability towards driving currents. These outstanding device performances indicate that the colloidal semiconductor NPLs possess huge potentiality to achieve higher color saturation and wide color gamut for applications in new-generation lightings and displays.

Facilely synthesized carbon dots and configurated light-emitting diodes with efficient electroluminescence

High-quality carbon dots are facilely synthesized and serve as emitters of light-emitting diodes with efficient electroluminescence.