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Bellet-Amalric E, Panciera F, Patriarche G, Travers L, den Hertog M, Harmand JC, Glas F, Cibert J. Regulated Dynamics with Two Monolayer Steps in Vapor-Solid-Solid Growth of Nanowires. ACS NANO 2022; 16:4397-4407. [PMID: 35276038 DOI: 10.1021/acsnano.1c10666] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The growth of ZnTe nanowires and ZnTe-CdTe nanowire heterostructures is studied by in situ transmission electron microscopy. We describe the shape and the change of shape of the solid gold nanoparticle during vapor-solid-solid growth. We show the balance between one monolayer and two monolayer steps, which characterizes the vapor-liquid-solid and vapor-solid-solid growth modes of ZnTe. We discuss the likely role of the mismatch strain and lattice coincidence between gold and ZnTe on the predominance of two monolayer steps during vapor-solid-solid growth and on the subsequent self-regulation of the step dynamics. Finally, the formation of an interface between CdTe and ZnTe is described.
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Affiliation(s)
- Edith Bellet-Amalric
- Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, 38054 cedex 09 Grenoble, France
| | - Federico Panciera
- Univ. Paris-Saclay, CNRS, Centre for Nanoscience and Nanotechnology, 91120 Palaiseau, France
| | - Gilles Patriarche
- Univ. Paris-Saclay, CNRS, Centre for Nanoscience and Nanotechnology, 91120 Palaiseau, France
| | - Laurent Travers
- Univ. Paris-Saclay, CNRS, Centre for Nanoscience and Nanotechnology, 91120 Palaiseau, France
| | - Martien den Hertog
- Univ. Grenoble-Alpes, CNRS, Grenoble INP, Inst. NEEL, BP 166, 38042 cedex 9, Grenoble, France
| | - Jean-Christophe Harmand
- Univ. Paris-Saclay, CNRS, Centre for Nanoscience and Nanotechnology, 91120 Palaiseau, France
| | - Frank Glas
- Univ. Paris-Saclay, CNRS, Centre for Nanoscience and Nanotechnology, 91120 Palaiseau, France
| | - Joël Cibert
- Univ. Grenoble-Alpes, CNRS, Grenoble INP, Inst. NEEL, BP 166, 38042 cedex 9, Grenoble, France
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Dahiya AS, Shakthivel D, Kumaresan Y, Zumeit A, Christou A, Dahiya R. High-performance printed electronics based on inorganic semiconducting nano to chip scale structures. NANO CONVERGENCE 2020; 7:33. [PMID: 33034776 PMCID: PMC7547062 DOI: 10.1186/s40580-020-00243-6] [Citation(s) in RCA: 19] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/13/2020] [Accepted: 09/15/2020] [Indexed: 05/05/2023]
Abstract
The Printed Electronics (PE) is expected to revolutionise the way electronics will be manufactured in the future. Building on the achievements of the traditional printing industry, and the recent advances in flexible electronics and digital technologies, PE may even substitute the conventional silicon-based electronics if the performance of printed devices and circuits can be at par with silicon-based devices. In this regard, the inorganic semiconducting materials-based approaches have opened new avenues as printed nano (e.g. nanowires (NWs), nanoribbons (NRs) etc.), micro (e.g. microwires (MWs)) and chip (e.g. ultra-thin chips (UTCs)) scale structures from these materials have been shown to have performances at par with silicon-based electronics. This paper reviews the developments related to inorganic semiconducting materials based high-performance large area PE, particularly using the two routes i.e. Contact Printing (CP) and Transfer Printing (TP). The detailed survey of these technologies for large area PE onto various unconventional substrates (e.g. plastic, paper etc.) is presented along with some examples of electronic devices and circuit developed with printed NWs, NRs and UTCs. Finally, we discuss the opportunities offered by PE, and the technical challenges and viable solutions for the integration of inorganic functional materials into large areas, 3D layouts for high throughput, and industrial-scale manufacturing using printing technologies.
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Affiliation(s)
- Abhishek Singh Dahiya
- Bendable Electronics and Sensing Technologies (BEST) Group, University of Glasgow, Glasgow, G12 8QQ, UK
| | - Dhayalan Shakthivel
- Bendable Electronics and Sensing Technologies (BEST) Group, University of Glasgow, Glasgow, G12 8QQ, UK
| | - Yogeenth Kumaresan
- Bendable Electronics and Sensing Technologies (BEST) Group, University of Glasgow, Glasgow, G12 8QQ, UK
| | - Ayoub Zumeit
- Bendable Electronics and Sensing Technologies (BEST) Group, University of Glasgow, Glasgow, G12 8QQ, UK
| | - Adamos Christou
- Bendable Electronics and Sensing Technologies (BEST) Group, University of Glasgow, Glasgow, G12 8QQ, UK
| | - Ravinder Dahiya
- Bendable Electronics and Sensing Technologies (BEST) Group, University of Glasgow, Glasgow, G12 8QQ, UK.
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Chang S, Lee GJ, Song YM. Recent Advances in Vertically Aligned Nanowires for Photonics Applications. MICROMACHINES 2020; 11:mi11080726. [PMID: 32722655 PMCID: PMC7465648 DOI: 10.3390/mi11080726] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/29/2020] [Revised: 07/22/2020] [Accepted: 07/25/2020] [Indexed: 12/13/2022]
Abstract
Over the past few decades, nanowires have arisen as a centerpiece in various fields of application from electronics to photonics, and, recently, even in bio-devices. Vertically aligned nanowires are a particularly decent example of commercially manufacturable nanostructures with regard to its packing fraction and matured fabrication techniques, which is promising for mass-production and low fabrication cost. Here, we track recent advances in vertically aligned nanowires focused in the area of photonics applications. Begin with the core optical properties in nanowires, this review mainly highlights the photonics applications such as light-emitting diodes, lasers, spectral filters, structural coloration and artificial retina using vertically aligned nanowires with the essential fabrication methods based on top-down and bottom-up approaches. Finally, the remaining challenges will be briefly discussed to provide future directions.
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Sun Q, Pan D, Li M, Zhao J, Chen P, Lu W, Zou J. In situ TEM observation of the vapor-solid-solid growth of <001[combining macron]> InAs nanowires. NANOSCALE 2020; 12:11711-11717. [PMID: 32452500 DOI: 10.1039/d0nr02892d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
In situ transmission electron microscopy characterization is a powerful method in investigating the growth mechanism of catalyst-induced semiconductor nanowires. By providing direct evidence on the crystal growth at the atomic level, a real-time in situ heating investigation was carried out on Au-catalyzed <001[combining macron]> InAs nanowires. It was found that the Au catalyst maintained itself in the solid form during the nanowire growth, and maintained a fixed epitaxial relationship with its underlying InAs nanowire, indicating the vapor-solid-solid mechanism. Importantly, the growth of <001[combining macron]> InAs nanowires through a layer-by-layer manner at the catalyst/nanowire interface is evident. This study provides direct insights into the vapor-solid-solid growth and clarified the growth mechanism of <001[combining macron]> III-V nanowires, which provides pathways in controlling the growth of <001[combining macron]> semiconductor nanowires.
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Affiliation(s)
- Qiang Sun
- Materials Engineering, The University of Queensland, St. Lucia, Queensland 4072, Australia.
| | - Dong Pan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Meng Li
- Materials Engineering, The University of Queensland, St. Lucia, Queensland 4072, Australia.
| | - Jianhua Zhao
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Pingping Chen
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Wei Lu
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Jin Zou
- Materials Engineering, The University of Queensland, St. Lucia, Queensland 4072, Australia. and Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072, Australia
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Sun Y, Sun B, He J, Yang G, Wang C. Millimeters long super flexible Mn 5Si 3@SiO 2 electrical nanocables applicable in harsh environments. Nat Commun 2020; 11:647. [PMID: 32005830 PMCID: PMC6994472 DOI: 10.1038/s41467-019-14244-5] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/08/2019] [Accepted: 12/18/2019] [Indexed: 12/22/2022] Open
Abstract
Providing high performance electrical nano-interconnects for micro-nano electronics that are robust in harsh environments is highly demanded. Today, electrical nano-interconnects based on metallic nanowires, e.g. Ag and Cu, are limited by their positive physicochemical reactivity and ductility under large strain (i.e. irreversible dislocations and local necking-down elongation) at high temperatures or in strong oxidizing and acidic environments. Herein, to overcome these limitations, high-quality millimetre-sized soft manganese-based silicide (Mn5Si3@SiO2) nanowire nanocables are designed via a glassy Si–Mn–O matrix assisted growth. The proposed nanocables exhibit good electrical performance (resistivity of 1.28 to 3.84×10-6 Ωm and maximum current density 1.22 to 3.54×107 A cm−2) at temperatures higher than 317°C in air atmosphere, strongly acidic (HCl, PH=1.0) and oxidizing (H2O2, 10%) ambient, and under complex electric field. The proposed Mn5Si3@SiO2 nanocables, which withstand a strain of 16.7% free of failure, could be exploited for diverse applications in flexible electronics and complex wiring configurations. Though high performance electrical interconnects are required for micro/nano electronics, existing metallic nanowires lack structural and electrical stability. Here, the authors report soft manganese-based silicide nanowires with high electrical and structural performance in harsh environments.
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Affiliation(s)
- Yong Sun
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen (Zhongshan) University, Guangzhou, 510275, People's Republic of China
| | - Bo Sun
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen (Zhongshan) University, Guangzhou, 510275, People's Republic of China
| | - Jingbo He
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen (Zhongshan) University, Guangzhou, 510275, People's Republic of China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen (Zhongshan) University, Guangzhou, 510275, People's Republic of China
| | - Chengxin Wang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen (Zhongshan) University, Guangzhou, 510275, People's Republic of China.
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Gao Z, Sun J, Han M, Yin Y, Gu Y, Yang ZX, Zeng H. Recent advances in Sb-based III-V nanowires. NANOTECHNOLOGY 2019; 30:212002. [PMID: 30708362 DOI: 10.1088/1361-6528/ab03ee] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Owing to the high mobility, narrow bandgap, strong spin-orbit coupling and large g-factor, Sb-based III-V nanowires (NWs) attracted significant interests in high speed electronics, long-wavelength photodetectors and quantum superconductivity in the past decade. In this review, we aim to give an integrated summarization about the recent advances in binary as well as ternary Sb-based III-V NWs, starting from the fundamental properties, NWs growth mechanism, typical synthetic methods to their applications in transistors, photodetectors, and Majorana fermions detection. Up to now, famous NWs growth techniques of solid-source chemical vapor deposition (CVD), molecular beam epitaxy, metal organic vapor phase epitaxy and metal organic CVD etc have been adopted and developed for the controllable growth of Sb-based III-V NWs. Several parameters including heating temperature, III/V ratio of source materials, growth temperature, catalyst size and kinds, and growth substrate play important roles on the morphology, position, diameter distribution, growth orientation and crystal phase of Sb-based III-V NWs. Furthermore, we discuss the photoelectrical applications of Sb-based III-V NWs such as field-effect-transistors, tunnel diode, low-power inverter, and infrared detectors etc. Importantly, due to the strongest spin-orbit interaction and giant g-factor among all III-V semiconductors, InSb with the geometry of one-dimension NW is considered as the most promising candidate for the detection of Majorana fermions. In the end, we also summarize the main challenges remaining in the field and put forward some suggestions for the future development of Sb-based III-V NWs.
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Affiliation(s)
- Zhaofeng Gao
- Shenzhen Research Institute of Shandong University, Shenzhen, 518057, People's Republic of China. School of Microelectronics, Shandong University, Jinan, 250100, People's Republic of China
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Chiang YT, Chou Y, Huang CH, Lin WT, Chou YC. Dependence of the structure and orientation of VSS grown Si nanowires on an epitaxy process. CrystEngComm 2019. [DOI: 10.1039/c9ce00539k] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/24/2023]
Abstract
We investigated the vapor–solid–solid growth of Si nanowires from Ni silicides on Si(111), Si(110), and GaN substrates.
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Affiliation(s)
- Yi-Ting Chiang
- Department of Electrophysics
- National Chiao Tung University
- Hsinchu 300
- Taiwan
| | - Yi Chou
- Department of Electrophysics
- National Chiao Tung University
- Hsinchu 300
- Taiwan
| | - Chang-Hsun Huang
- Department of Electrophysics
- National Chiao Tung University
- Hsinchu 300
- Taiwan
| | - Wei-Ting Lin
- Department of Electrophysics
- National Chiao Tung University
- Hsinchu 300
- Taiwan
| | - Yi-Chia Chou
- Department of Electrophysics
- National Chiao Tung University
- Hsinchu 300
- Taiwan
- Center for the Intelligent Semiconductor Nano-system Technology Research
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Zhuang C, Li L, Liu Y, Ban C, Liu X. Boron-assisted growth of silica nanowire arrays and silica microflowers for bendable capacitor application. CHINESE CHEM LETT 2018. [DOI: 10.1016/j.cclet.2017.09.039] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/27/2022]
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Chen R, Dayeh SA. Recordings and Analysis of Atomic Ledge and Dislocation Movements in InGaAs to Nickelide Nanowire Phase Transformation. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2017; 13:1604117. [PMID: 28597611 DOI: 10.1002/smll.201604117] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/12/2016] [Revised: 04/06/2017] [Indexed: 06/07/2023]
Abstract
The formation of low resistance and self-aligned contacts with thermally stable alloyed phases is a prerequisite for realizing reliable functionality in ultrascaled semiconductor transistors. Detailed structural analysis of the phase transformation accompanying contact alloying can facilitate contact engineering as transistor channels approach a few atoms across. Original in situ heating transmission electron microscopy studies are carried out to record and analyze the atomic scale dynamics of contact alloy formation between Ni and In0.53 Ga0.47 As nanowire channels. It is observed that the nickelide reacts on the In0.53 Ga0.47 As (111) || Ni2 In0.53 Ga0.47 As (0001) interface with atomic ledge propagation along the Ni2 In0.53 Ga0.47 As [101¯0] direction. Ledges nucleate as a train of strained single-bilayers and propagate in-plane as double-bilayers that are associated with a misfit dislocation of b→=2c3[0001]. The atomic structure is reconstructed to explain this phase transformation that involves collective gliding of three Shockley partials in In0.53 Ga0.47 As lattice to cancel out shear stress and the formation of misfit dislocations to compensate the large lattice mismatch in the newly formed nickelide phase and the In0.53 Ga0.47 As layers. This work demonstrates the applicability of interfacial disconnection (ledge + dislocation) theory in a nanowire channel during thermally induced phase transformation that is typical in metal/III-V semiconductor reactions.
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Affiliation(s)
- Renjie Chen
- Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, CA, 92093, USA
| | - Shadi A Dayeh
- Department of Electrical and Computer Engineering, Materials Science and Engineering Program, Department of NanoEngineering, University of California San Diego, La Jolla, CA, 92093, USA
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Roussey A, Martinez E, Copéret C, Thieuleux C, Jousseaume V. Cu Nanoparticles on TiN by Electroless Deposition: Surface-Mediated Diameter Control and Application to Si Nanowires Growth. Helv Chim Acta 2017. [DOI: 10.1002/hlca.201700018] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
Affiliation(s)
- Arthur Roussey
- Univ. Grenoble Alpes; FR-38000 Grenoble France
- CEA, LETI; MINATEC Campus FR-38054 Grenoble France
- University of Lyon; C2P2, UMR 5265 CNRS - ESCPE Lyon; 43 Bd du 11 Novembre 1918 FR-69626 Villeurbanne Cedex France
| | - Eugénie Martinez
- University of Lyon; C2P2, UMR 5265 CNRS - ESCPE Lyon; 43 Bd du 11 Novembre 1918 FR-69626 Villeurbanne Cedex France
| | - Christophe Copéret
- Department of Chemistry and Applied Biosciences; ETH Zürich; Vladimir Prelog Weg 2 CH-8093 Zürich Switzerland
| | - Chloé Thieuleux
- University of Lyon; C2P2, UMR 5265 CNRS - ESCPE Lyon; 43 Bd du 11 Novembre 1918 FR-69626 Villeurbanne Cedex France
| | - Vincent Jousseaume
- Univ. Grenoble Alpes; FR-38000 Grenoble France
- CEA, LETI; MINATEC Campus FR-38054 Grenoble France
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Yin X, Geng D, Wang X. Inverted Wedding Cake Growth Operated by the Ehrlich-Schwoebel Barrier in Two-Dimensional Nanocrystal Evolution. Angew Chem Int Ed Engl 2016. [DOI: 10.1002/ange.201510376] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
Affiliation(s)
- Xin Yin
- Department of Material Sciences and Engineering; University of Wisconsin-Madison; 1500 Engineering Dr. Madison WI 53705 USA
| | - Dalong Geng
- Department of Material Sciences and Engineering; University of Wisconsin-Madison; 1500 Engineering Dr. Madison WI 53705 USA
| | - Xudong Wang
- Department of Material Sciences and Engineering; University of Wisconsin-Madison; 1500 Engineering Dr. Madison WI 53705 USA
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Yin X, Geng D, Wang X. Inverted Wedding Cake Growth Operated by the Ehrlich-Schwoebel Barrier in Two-Dimensional Nanocrystal Evolution. Angew Chem Int Ed Engl 2016; 55:2217-21. [DOI: 10.1002/anie.201510376] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/08/2015] [Revised: 12/06/2015] [Indexed: 11/06/2022]
Affiliation(s)
- Xin Yin
- Department of Material Sciences and Engineering; University of Wisconsin-Madison; 1500 Engineering Dr. Madison WI 53705 USA
| | - Dalong Geng
- Department of Material Sciences and Engineering; University of Wisconsin-Madison; 1500 Engineering Dr. Madison WI 53705 USA
| | - Xudong Wang
- Department of Material Sciences and Engineering; University of Wisconsin-Madison; 1500 Engineering Dr. Madison WI 53705 USA
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