1
|
Chang M, Qian J, Li Z, Cheng X, Wang Y, Fan L, Cao J, Ding L. Ku-Band Mixers Based on Random-Oriented Carbon Nanotube Films. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:450. [PMID: 38470780 DOI: 10.3390/nano14050450] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/31/2023] [Revised: 02/21/2024] [Accepted: 02/27/2024] [Indexed: 03/14/2024]
Abstract
Carbon nanotubes (CNTs) are a type of nanomaterial that have excellent electrical properties such as high carrier mobility, high saturation velocity, and small inherent capacitance, showing great promise in radio frequency (RF) applications. Decades of development have been made mainly on cut-off frequency and amplification; however, frequency conversion for RF transceivers, such as CNT-based mixers, has been rarely reported. In this work, based on randomly oriented carbon nanotube films, we focused on exploring the frequency conversion capability of CNT-based RF mixers. CNT-based RF transistors were designed and fabricated with a gate length of 50 nm and gate width of 100 μm to obtain nearly 30 mA of total current and 34 mS of transconductance. The Champion RF transistor has demonstrated cut-off frequencies of 78 GHz and 60 GHz for fT and fmax, respectively. CNT-based mixers achieve high conversion gain from -11.4 dB to -17.5 dB at 10 to 15 GHz in the X and Ku bands. Additionally, linearity is achieved with an input third intercept (IIP3) of 18 dBm. It is worth noting that the results from this work have no matching technology or tuning instrument assistance, which lay the foundations for the application of Ku band transceivers integrated with CNT amplifiers.
Collapse
Affiliation(s)
- Mengnan Chang
- Key Laboratory of Luminescence & Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China
| | - Jiale Qian
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan 411105, China
| | - Zhaohui Li
- Key Laboratory of Luminescence & Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China
| | - Xiaohan Cheng
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Ying Wang
- Key Laboratory of Luminescence & Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China
| | - Ling Fan
- Key Laboratory of Luminescence & Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China
| | - Juexian Cao
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan 411105, China
| | - Li Ding
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, School of Electronics, Peking University, Beijing 100871, China
| |
Collapse
|
2
|
Lu P, Zhu M, Zhao P, Fan C, Zhu H, Gao J, Yang C, Han Z, Li B, Liu J, Zhang Z. Heavy Ion Displacement Damage Effect in Carbon Nanotube Field Effect Transistors. ACS APPLIED MATERIALS & INTERFACES 2023; 15:10936-10946. [PMID: 36791232 DOI: 10.1021/acsami.2c20005] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Recent advances in carbon nanotube (CNT)-based integrated circuits have shown their potential in deep space exploration. In this work, the mechanism governing the heavy-ion-induced displacement damage (DD) effect in semiconducting single-walled CNT field effect transistors (FETs), which is one of the factors limiting device robustness in space, was first and thoroughly investigated. CNT FETs irradiated by a Xe ion fluence of 1012 ions/cm2 can maintain a high on/off current ratio, while transistors' performance failure is observed as the ion fluence increased to 5 × 1012 ions/cm2. Controllable experiments combined with numerical simulations revealed that the degradation mechanism changed as the nonionizing radiation energy built up. The trap generation in the gate dielectric, instead of the CNT channel, was identified as the dominating factor for the high-energy-radiation-induced device failure. Therefore, CNT FETs exhibited a >10× higher DD tolerance than that of Si devices, which was limited by the channel damage under irradiation. More importantly, the distinct failure mechanism determined that CNT FETs can maintain a high DD tolerance of 2.8 × 1013 MeV/g as the technology node scales down to 45 nm node, suggesting the potential of CNT-based VLSI for high-performance and high-robustness space applications.
Collapse
Affiliation(s)
- Peng Lu
- Institute of Microelectronics, Chinese Academy of Science, Beijing 100029, China
| | - Maguang Zhu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China
- School of Integrated Circuits, Nanjing University, Qixia District, Nanjing, Jiangsu 210023, China
| | - Peixiong Zhao
- Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China
| | - Chenwei Fan
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China
| | - Huiping Zhu
- Institute of Microelectronics, Chinese Academy of Science, Beijing 100029, China
| | - Jiantou Gao
- Institute of Microelectronics, Chinese Academy of Science, Beijing 100029, China
| | - Can Yang
- Institute of Microelectronics, Chinese Academy of Science, Beijing 100029, China
| | - Zhengsheng Han
- Institute of Microelectronics, Chinese Academy of Science, Beijing 100029, China
| | - Bo Li
- Institute of Microelectronics, Chinese Academy of Science, Beijing 100029, China
| | - Jie Liu
- Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China
| | - Zhiyong Zhang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China
| |
Collapse
|
3
|
Li Z, Xiao M, Jin C, Zhang Z. Toward the Commercialization of Carbon Nanotube Field Effect Transistor Biosensors. BIOSENSORS 2023; 13:326. [PMID: 36979538 PMCID: PMC10046102 DOI: 10.3390/bios13030326] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/05/2023] [Revised: 02/21/2023] [Accepted: 02/24/2023] [Indexed: 06/18/2023]
Abstract
The development of biosensors based on field-effect transistors (FETs) using atomically thick carbon nanotubes (CNTs) as a channel material has the potential to revolutionize the related field due to their small size, high sensitivity, label-free detection, and real-time monitoring capabilities. Despite extensive research efforts to improve the sensitivity, selectivity, and practicality of CNT FET-based biosensors, their commercialization has not yet been achieved due to the non-uniform and unstable device performance, difficulties in their fabrication, the immaturity of sensor packaging processes, and a lack of reliable modification methods. This review article focuses on the practical applications of CNT-based FET biosensors for the detection of ultra-low concentrations of biologically relevant molecules. We discuss the various factors that affect the sensors' performance in terms of materials, device architecture, and sensor packaging, highlighting the need for a robust commercial process that prioritizes product performance. Additionally, we review recent advances in the application of CNT FET biosensors for the ultra-sensitive detection of various biomarkers. Finally, we examine the key obstacles that currently hinder the large-scale deployment of these biosensors, aiming to identify the challenges that must be addressed for the future industrialization of CNT FET sensors.
Collapse
Affiliation(s)
- Zhongyu Li
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan 411105, China
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, School of Electronics, Peking University, Beijing 100871, China
- Jihua Laboratory, Foshan 528200, China
| | - Mengmeng Xiao
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan 411105, China
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, School of Electronics, Peking University, Beijing 100871, China
| | - Chuanhong Jin
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan 411105, China
- Jihua Laboratory, Foshan 528200, China
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Zhiyong Zhang
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan 411105, China
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, School of Electronics, Peking University, Beijing 100871, China
- Jihua Laboratory, Foshan 528200, China
| |
Collapse
|
4
|
Liu C, Cao Y, Wang B, Zhang Z, Lin Y, Xu L, Yang Y, Jin C, Peng LM, Zhang Z. Complementary Transistors Based on Aligned Semiconducting Carbon Nanotube Arrays. ACS NANO 2022; 16:21482-21490. [PMID: 36416375 DOI: 10.1021/acsnano.2c10007] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
High-density semiconducting aligned carbon nanotube (A-CNT) arrays have been demonstrated with wafer-scale preparation of materials and have shown high performance in P-type field-effect transistors (FETs) and great potential for applications in future digital integrated circuits (ICs). However, high-performance N-type FETs (N-FETs) have not yet been implemented with A-CNTs, making development of complementary metal-oxide-semiconductor (CMOS) technology, a necessary component for modern digital ICs, impossible. In this work, we reveal the mechanism hindering the realization of A-CNT N-FETs contacted by low-work-function metals and develop corresponding solutions to promote the performance of N-FETs to that of P-type FETs (P-FETs). The fabricated scandium (Sc)-contacted A-CNT N-FET with a 100 nm gate length exhibits an on-state current (Ion) of 800 μA/μm and a peak transconductance (gm) of 250 μS/μm, representing the highest performance of CNT-based N-FETs to date. Moreover, CMOS technology has been developed to realize N- and P-FETs with symmetric high performance based on A-CNTs. The fabricated A-CNT CMOS FETs show electron and hole mobilities of 325 and 241 cm2 V-1 s-1, respectively, which are slightly higher than the corresponding values of Si CMOS transistors. Our scalable fabrication of A-CNT CMOS FETs with comparable electronic performance to Si CMOS will promote the application of CNT-based electronics in digital ICs.
Collapse
Affiliation(s)
- Chenchen Liu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China
- Jihua Laboratory, Foshan, Guangdong 528200, China
| | - Yu Cao
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China
| | - Bo Wang
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Zixuan Zhang
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Yanxia Lin
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Lin Xu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China
| | - Yingjun Yang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China
- Beijing Institute of Carbon-based Integrated Circuits, Beijing 100195, China
| | - Chuanhong Jin
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
- Jihua Laboratory, Foshan, Guangdong 528200, China
| | - Lian-Mao Peng
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
- Beijing Institute of Carbon-based Integrated Circuits, Beijing 100195, China
- Jihua Laboratory, Foshan, Guangdong 528200, China
| | - Zhiyong Zhang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
- Beijing Institute of Carbon-based Integrated Circuits, Beijing 100195, China
- Jihua Laboratory, Foshan, Guangdong 528200, China
| |
Collapse
|
5
|
Zou J, Cai W, Zhang Q. Subthreshold Schottky-contacted carbon nanotube network film field-effect transistors for ultralow-power electronic applications. NANOTECHNOLOGY 2022; 33:505206. [PMID: 36130528 DOI: 10.1088/1361-6528/ac9392] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/17/2022] [Accepted: 09/20/2022] [Indexed: 06/15/2023]
Abstract
Ultralow-power electronics is critical to wearable, portable, and implantable applications where the systems could only have access to very limited electrical power supply or even be self-powered. Here, we report on a type of Schottky barrier (SB) contacted single-walled carbon nanotube (SWCNT) network film field-effect-transistors (FETs) that are operated in the subthreshold region to achieve ultralow-power applications. The thin high-k gate dielectric and the overlap between the gate and the source electrodes offer highly efficient gate electrostatic control over the SWCNT channel and the SB at the source contact, resulting in steep subthreshold switching characteristics with a small subthreshold swing (∼67 mV dec-1), a large current on/off ratio (∼106), and a low off-state current (∼0.5 pA). Ap-channel metal-oxide-semiconductor inverter built with the subthreshold SB-SWCNT-FETs exhibits a well-defined logic functionality and small-signal amplification capability under a low supply voltage (∼0.5 V) and an ultralow power (∼0.05 pWμm-1). The low-voltage and deep subthreshold operations reported here could lay an essential foundation for high-performance and ultralow-power SWCNTs-based electronics.
Collapse
Affiliation(s)
- Jianping Zou
- Centre for Micro- & Nano-Electronics, School of Electrical and Electronic Engineering, Nanyang Technological University, 639798 Singapore
| | - Weifan Cai
- Centre for Micro- & Nano-Electronics, School of Electrical and Electronic Engineering, Nanyang Technological University, 639798 Singapore
| | - Qing Zhang
- Centre for Micro- & Nano-Electronics, School of Electrical and Electronic Engineering, Nanyang Technological University, 639798 Singapore
| |
Collapse
|
6
|
Wei X, Li S, Wang W, Zhang X, Zhou W, Xie S, Liu H. Recent Advances in Structure Separation of Single-Wall Carbon Nanotubes and Their Application in Optics, Electronics, and Optoelectronics. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2200054. [PMID: 35293698 PMCID: PMC9108629 DOI: 10.1002/advs.202200054] [Citation(s) in RCA: 19] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/04/2022] [Revised: 02/10/2022] [Indexed: 05/04/2023]
Abstract
Structural control of single-wall carbon nanotubes (SWCNTs) with uniform properties is critical not only for their property modulation and functional design but also for applications in electronics, optics, and optoelectronics. To achieve this goal, various separation techniques have been developed in the past 20 years through which separation of high-purity semiconducting/metallic SWCNTs, single-chirality species, and even their enantiomers have been achieved. This progress has promoted the property modulation of SWCNTs and the development of SWCNT-based optoelectronic devices. Here, the recent advances in the structure separation of SWCNTs are reviewed, from metallic/semiconducting SWCNTs, to single-chirality species, and to enantiomers by several typical separation techniques and the application of the corresponding sorted SWCNTs. Based on the separation procedure, efficiency, and scalability, as well as, the separable SWCNT species, purity, and quantity, the advantages and disadvantages of various separation techniques are compared. Combined with the requirements of SWCNT application, the challenges, prospects, and development direction of structure separation are further discussed.
Collapse
Affiliation(s)
- Xiaojun Wei
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
- Center of Materials Science and Optoelectronics Engineeringand School of Physical SciencesUniversity of Chinese Academy of SciencesBeijing100049China
- Beijing Key Laboratory for Advanced Functional Materials and Structure ResearchBeijing100190China
- Songshan Lake Materials LaboratoryDongguanGuangdong523808China
| | - Shilong Li
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
- Beijing Key Laboratory for Advanced Functional Materials and Structure ResearchBeijing100190China
| | - Wenke Wang
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
- Center of Materials Science and Optoelectronics Engineeringand School of Physical SciencesUniversity of Chinese Academy of SciencesBeijing100049China
- Beijing Key Laboratory for Advanced Functional Materials and Structure ResearchBeijing100190China
| | - Xiao Zhang
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
- Center of Materials Science and Optoelectronics Engineeringand School of Physical SciencesUniversity of Chinese Academy of SciencesBeijing100049China
- Beijing Key Laboratory for Advanced Functional Materials and Structure ResearchBeijing100190China
- Songshan Lake Materials LaboratoryDongguanGuangdong523808China
| | - Weiya Zhou
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
- Center of Materials Science and Optoelectronics Engineeringand School of Physical SciencesUniversity of Chinese Academy of SciencesBeijing100049China
- Beijing Key Laboratory for Advanced Functional Materials and Structure ResearchBeijing100190China
- Songshan Lake Materials LaboratoryDongguanGuangdong523808China
| | - Sishen Xie
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
- Center of Materials Science and Optoelectronics Engineeringand School of Physical SciencesUniversity of Chinese Academy of SciencesBeijing100049China
- Beijing Key Laboratory for Advanced Functional Materials and Structure ResearchBeijing100190China
- Songshan Lake Materials LaboratoryDongguanGuangdong523808China
| | - Huaping Liu
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
- Center of Materials Science and Optoelectronics Engineeringand School of Physical SciencesUniversity of Chinese Academy of SciencesBeijing100049China
- Beijing Key Laboratory for Advanced Functional Materials and Structure ResearchBeijing100190China
- Songshan Lake Materials LaboratoryDongguanGuangdong523808China
| |
Collapse
|
7
|
Zou J, Zhang Q. Advances and Frontiers in Single-Walled Carbon Nanotube Electronics. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2102860. [PMID: 34687177 PMCID: PMC8655197 DOI: 10.1002/advs.202102860] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/05/2021] [Revised: 08/21/2021] [Indexed: 06/13/2023]
Abstract
Single-walled carbon nanotubes (SWCNTs) have been considered as one of the most promising electronic materials for the next-generation electronics in the more Moore era. Sub-10 nm SWCNT-field effect transistors (FETs) have been realized with several performances exceeding those of Si-based FETs at the same feature size. Several industrial initiatives have attempted to implement SWCNT electronics in integrated circuit (IC) chips. Here, the recent advances in SWCNT electronics are reviewed from in-depth understanding of the fundamental electronic structures, the carrier transport mechanisms, and the metal/SWCNT contact properties. In particular, the subthreshold switching properties are highlighted for low-power, energy-efficient device operations. State-of-the-art low-power SWCNT-based electronics and the key strategies to realize low-voltage and low-power operations are outlined. Finally, the essential challenges and prospects from the material preparation, device fabrication, and large-scale ICs integration for future SWCNT-based electronics are foregrounded.
Collapse
Affiliation(s)
- Jianping Zou
- Centre for Micro‐ & Nano‐ElectronicsSchool of Electrical and Electronic EngineeringNanyang Technological UniversitySingapore639798Singapore
| | - Qing Zhang
- Centre for Micro‐ & Nano‐ElectronicsSchool of Electrical and Electronic EngineeringNanyang Technological UniversitySingapore639798Singapore
| |
Collapse
|
8
|
Zhu M, Zhou J, Sun P, Peng LM, Zhang Z. Analyzing Gamma-Ray Irradiation Effects on Carbon Nanotube Top-Gated Field-Effect Transistors. ACS APPLIED MATERIALS & INTERFACES 2021; 13:47756-47763. [PMID: 34581560 DOI: 10.1021/acsami.1c13651] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Carbon nanotube (CNT) field-effect transistors (FETs) and integrated circuits (ICs) have been predicted and demonstrated to be some of the most promising candidates for radiation-hardened electronics. The studies mainly focused on the radiation response of the whole transistors, and experiments or analyses to reveal the detailed radiation responses of different components of the FET were absent. Here, we use a controllable experimental method to decouple the total ionizing dose (TID) radiation effects on different individual components of top-gate CNT FETs, including the CNT channel, gate dielectric, and substrate. The substrate is found to be more vulnerable to radiation damage than the gate dielectric and CNT film in FETs. Furthermore, the CNT film not only acts as a radiation-hardened semiconducting channel but also protects the channel/substrate interface by partially shielding the substrate from radiation damage. On the basis of the experimental data, a model is built to predict the irradiation resistance limit of CNT top-gated FETs, which can withstand at least 155 kGy irradiation.
Collapse
Affiliation(s)
- Maguang Zhu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Jianshuo Zhou
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Pengkun Sun
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Lian-Mao Peng
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Zhiyong Zhang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| |
Collapse
|
9
|
Chen X, Xie Y, Sheng Y, Tang H, Wang Z, Wang Y, Wang Y, Liao F, Ma J, Guo X, Tong L, Liu H, Liu H, Wu T, Cao J, Bu S, Shen H, Bai F, Huang D, Deng J, Riaud A, Xu Z, Wu C, Xing S, Lu Y, Ma S, Sun Z, Xue Z, Di Z, Gong X, Zhang DW, Zhou P, Wan J, Bao W. Wafer-scale functional circuits based on two dimensional semiconductors with fabrication optimized by machine learning. Nat Commun 2021; 12:5953. [PMID: 34642325 PMCID: PMC8511068 DOI: 10.1038/s41467-021-26230-x] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/21/2021] [Accepted: 09/17/2021] [Indexed: 11/28/2022] Open
Abstract
Triggered by the pioneering research on graphene, the family of two-dimensional layered materials (2DLMs) has been investigated for more than a decade, and appealing functionalities have been demonstrated. However, there are still challenges inhibiting high-quality growth and circuit-level integration, and results from previous studies are still far from complying with industrial standards. Here, we overcome these challenges by utilizing machine-learning (ML) algorithms to evaluate key process parameters that impact the electrical characteristics of MoS2 top-gated field-effect transistors (FETs). The wafer-scale fabrication processes are then guided by ML combined with grid searching to co-optimize device performance, including mobility, threshold voltage and subthreshold swing. A 62-level SPICE modeling was implemented for MoS2 FETs and further used to construct functional digital, analog, and photodetection circuits. Finally, we present wafer-scale test FET arrays and a 4-bit full adder employing industry-standard design flows and processes. Taken together, these results experimentally validate the application potential of ML-assisted fabrication optimization for beyond-silicon electronic materials. Here, the authors demonstrate the application of machine learning to optimize the device fabrication process for wafer-scale 2D semiconductors, and eventually fabricate digital, analog, and optoelectrical circuits.
Collapse
Affiliation(s)
- Xinyu Chen
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, P. R. China
| | - Yufeng Xie
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, P. R. China
| | - Yaochen Sheng
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, P. R. China
| | - Hongwei Tang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, P. R. China
| | - Zeming Wang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, P. R. China
| | - Yu Wang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, P. R. China
| | - Yin Wang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, P. R. China
| | - Fuyou Liao
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, P. R. China
| | - Jingyi Ma
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, P. R. China
| | - Xiaojiao Guo
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, P. R. China
| | - Ling Tong
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, P. R. China
| | - Hanqi Liu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, P. R. China
| | - Hao Liu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, P. R. China
| | - Tianxiang Wu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, P. R. China
| | - Jiaxin Cao
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, P. R. China
| | - Sitong Bu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, P. R. China
| | - Hui Shen
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, P. R. China
| | - Fuyu Bai
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, P. R. China
| | - Daming Huang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, P. R. China
| | - Jianan Deng
- State Key Laboratory of ASIC and System, School of Information Science and Technology, Fudan University, Shanghai, 200433, P. R. China
| | - Antoine Riaud
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, P. R. China
| | - Zihan Xu
- Shenzhen Six Carbon Technology, Shenzhen, 518055, P. R. China
| | - Chenjian Wu
- School of Electronic and Information Engineering, Soochow University, Suzhou, 215006, P. R. China
| | - Shiwei Xing
- School of Electronic and Information Engineering, Soochow University, Suzhou, 215006, P. R. China
| | - Ye Lu
- State Key Laboratory of ASIC and System, School of Information Science and Technology, Fudan University, Shanghai, 200433, P. R. China
| | - Shunli Ma
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, P. R. China
| | - Zhengzong Sun
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, P. R. China
| | - Zhongyin Xue
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, P. R. China
| | - Zengfeng Di
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, P. R. China
| | - Xiao Gong
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore
| | - David Wei Zhang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, P. R. China
| | - Peng Zhou
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, P. R. China.
| | - Jing Wan
- State Key Laboratory of ASIC and System, School of Information Science and Technology, Fudan University, Shanghai, 200433, P. R. China.
| | - Wenzhong Bao
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, P. R. China.
| |
Collapse
|
10
|
Sun J, Zhuang X, Fan Y, Guo S, Cheng Z, Liu D, Yin Y, Tian Y, Pang Z, Wei Z, Song X, Liao L, Chen F, Ho JC, Yang ZX. Toward Unusual-High Hole Mobility of p-Channel Field-Effect-Transistors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2102323. [PMID: 34288454 DOI: 10.1002/smll.202102323] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2021] [Revised: 06/27/2021] [Indexed: 06/13/2023]
Abstract
The relative low hole mobility of p-channel building block device challenges the continued miniaturization of modern electronic chips. Metal-semiconductor junction is always an efficient strategy to control the carrier concentration of channel semiconductor, benefiting the carrier mobility regulation of building block device. In this work, complementary metal oxide semiconductor (CMOS)-compatible metals are selected to deposit on the surface of the important p-channel building block of GaSb nanowire field-effect-transistors (NWFETs), demonstrating the efficient strategy of hole mobility enhancement by metal-semiconductor junction. When deposited with lower work function metal of Al, the peak hole mobility of GaSb NWFET can be enhanced to as high as ≈3372 cm2 V-1 s-1 , showing three times than the un-deposited one. The as-studied metal-semiconductor junction is also efficient for the hole mobility enhancement of other p-channel devices, such as GaAs NWFET, GaAs film FET, and WSe2 FET. With the enhanced mobility, the as-constructed CMOS inverter shows good invert characteristics, showing a relatively high gain of ≈18.1. All results may be regarded as important advances to the next-generation electronics.
Collapse
Affiliation(s)
- Jiamin Sun
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, P. R. China
| | - Xinming Zhuang
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Yibo Fan
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Shuai Guo
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, 130022, P. R. China
| | - Zichao Cheng
- Institute of Optoelectronics and Nanomaterials, MIIT Key Laboratory of Advanced Display Materials and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Dong Liu
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, P. R. China
| | - Yanxue Yin
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Yufeng Tian
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Zhiyong Pang
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Zhipeng Wei
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, 130022, P. R. China
| | - Xiufeng Song
- Institute of Optoelectronics and Nanomaterials, MIIT Key Laboratory of Advanced Display Materials and Devices, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Lei Liao
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, P. R. China
| | - Feng Chen
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, 999077, P. R. China
| | - Zai-Xing Yang
- School of Physics, School of Microelectronics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, P. R. China
| |
Collapse
|
11
|
Zhou J, Liu L, Shi H, Zhu M, Cheng X, Ren L, Ding L, Peng LM, Zhang Z. Carbon Nanotube Based Radio Frequency Transistors for K-Band Amplifiers. ACS APPLIED MATERIALS & INTERFACES 2021; 13:37475-37482. [PMID: 34340306 DOI: 10.1021/acsami.1c07782] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Owing to the combination of high carrier mobility and saturation velocity, low intrinsic capacitance, and excellent stability, the carbon nanotube (CNT) has been considered as a perfect semiconductor to construct radio frequency (RF) field-effect transistors (FETs) and circuits with an ultrahigh frequency band. However, the reported CNT RF FETs usually exhibited poor real performance indicated by the as-measured maximum oscillation frequency (fmax), and then the amplifiers, which are the most important and fundamental RF circuits, suffered from a low power gain and a low frequency band. In this work, we build RF transistors on solution-derived randomly orientated CNT films with improved quality and uniformity. The randomly orientated CNT film FETs exhibit the record as-measured maximum fmax of 90 GHz, demonstrating the potential for over 28 GHz (at least one-third of 90 GHz) 5G mmWave (frequency range 2) applications. Benefiting from the large-scale uniformity of CNT films, FETs are designed and fabricated with a large channel width to present low internal resistance for the standard 50 Ω impedance matching guide line, which is critical to construct an RF amplifier. Furthermore, we first demonstrate amplifiers with a maximum power gain up to 11 dB and output third-order intercept point (OIP3) of 15 dBm, both at the K-band, which represents the record of a CNT amplifier and is even comparable with a commercial amplifier based on III-V RF transistors.
Collapse
Affiliation(s)
- Jianshuo Zhou
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Lijun Liu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Huiwen Shi
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, Department of Electronics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Maguang Zhu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Xiaohan Cheng
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, Department of Electronics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Li Ren
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Li Ding
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Lian-Mao Peng
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, Department of Electronics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Zhiyong Zhang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| |
Collapse
|
12
|
Du C, Ren Y, Qu Z, Gao L, Zhai Y, Han ST, Zhou Y. Synaptic transistors and neuromorphic systems based on carbon nano-materials. NANOSCALE 2021; 13:7498-7522. [PMID: 33928966 DOI: 10.1039/d1nr00148e] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Carbon-based materials possessing a nanometer size and unique electrical properties perfectly address the two critical issues of transistors, the low power consumption and scalability, and are considered as a promising material in next-generation synaptic devices. In this review, carbon-based synaptic transistors were systematically summarized. In the carbon nanotube section, the synthesis of carbon nanotubes, purification of carbon nanotubes, the effect of architecture on the device performance and related carbon nanotube-based devices for neuromorphic computing were discussed. In the graphene section, the synthesis of graphene and its derivative, as well as graphene-based devices for neuromorphic computing, was systematically studied. Finally, the current challenges for carbon-based synaptic transistors were discussed.
Collapse
Affiliation(s)
- Chunyu Du
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yanyun Ren
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China.
| | - Zhiyang Qu
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China.
| | - Lili Gao
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yongbiao Zhai
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Su-Ting Han
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China.
| |
Collapse
|
13
|
Zhao C, Zhong D, Liu L, Yang Y, Shi H, Peng LM, Zhang Z. Strengthened Complementary Metal-Oxide-Semiconductor Logic for Small-Band-Gap Semiconductor-Based High-Performance and Low-Power Application. ACS NANO 2020; 14:15267-15275. [PMID: 33124414 DOI: 10.1021/acsnano.0c05554] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Silicon-based complementary metal-oxide-semiconductor (CMOS) has been the mainstream logic style for modern digital integrated circuits (ICs) for decades but will meet its performance limits soon. Extensive investigations have thus been carried out using other semiconductors, especially those with extremely high carrier mobility. However, these materials usually have small or even zero band gap, which leads inevitably to large leakage current or voltage loss in ICs based on these semiconductors. In this work, we propose and demonstrate a strengthened CMOS (SCMOS) logic style using modified field-effect transistors (FETs) to solve this problem, that is, to achieve high performance, utilizing the high carrier mobility in these materials, and to reduce the current leakage resulting from their small band gap. Conventional CMOS FETs are modified to have an asymmetric structure where an additional assistant gate is introduced near the drain to further lower the potential barrier in on-state and to increase the barrier in off-state. SCMOS ICs are constructed using these modified asymmetric CMOS FETs, which demonstrate perfect rail-to-rail output with negligible voltage loss and 3 orders of magnitude suppression of the static power consumption and an operating speed similar to or even higher than that of CMOS ICs. Here, SCMOS is demonstrated using carbon nanotubes, but, in principle, this logic style can be used in ICs based on any small-band-gap semiconductors to provide simultaneously high performance and low power consumption.
Collapse
Affiliation(s)
- Chenyi Zhao
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Donglai Zhong
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Lijun Liu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Yingjun Yang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Huiwen Shi
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Lian-Mao Peng
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Zhiyong Zhang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-Based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| |
Collapse
|
14
|
Liang Y, Xiao M, Wu D, Lin Y, Liu L, He J, Zhang G, Peng LM, Zhang Z. Wafer-Scale Uniform Carbon Nanotube Transistors for Ultrasensitive and Label-Free Detection of Disease Biomarkers. ACS NANO 2020; 14:8866-8874. [PMID: 32574035 DOI: 10.1021/acsnano.0c03523] [Citation(s) in RCA: 77] [Impact Index Per Article: 19.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/20/2023]
Abstract
Carbon nanotube (CNT) field-effect transistor (FET)-based biosensors have shown great potential for ultrasensitive biomarker detection, but challenges remain, which include unsatisfactory sensitivity, difficulty in stable functionalization, incompatibility with scalable fabrication, and nonuniform performance. Here, we describe ultrasensitive, label-free, and stable FET biosensors built on polymer-sorted high-purity semiconducting CNT films with wafer-scale fabrication and high uniformity. With a floating gate (FG) structure using an ultrathin Y2O3 high-κ dielectric layer, the CNT FET biosensors show amplified response and improved sensitivity compared with those sensors without Y2O3, which is attributed to the chemical gate-coupling effect dominating the sensor response. The CNT FG-FETs are modified to selectively detect specific disease biomarkers, namely, DNA sequences and microvesicles, with theoretical record detection limits as low as 60 aM and 6 particles/mL, respectively. Furthermore, the biosensors exhibit highly uniform performance over the 4 in. wafer as well as superior bias stress stability. The FG CNT FET biosensors could be extended as a universal biosensor platform for the ultrasensitive detection of multiple biological molecules and applied in highly integrated and multiplexed all CNT-FET-based sensor architectures.
Collapse
Affiliation(s)
- Yuqi Liang
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Hunan 411105, China
| | - Mengmeng Xiao
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Ding Wu
- School of Laboratory Medicine, Hubei University of Chinese Medicine, Huangjia Lake West Road, Wuhan 430065, China
| | - Yanxia Lin
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Lijun Liu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Jianping He
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Hunan 411105, China
| | - Guojun Zhang
- School of Laboratory Medicine, Hubei University of Chinese Medicine, Huangjia Lake West Road, Wuhan 430065, China
| | - Lian-Mao Peng
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Hunan 411105, China
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Zhiyong Zhang
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Hunan 411105, China
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| |
Collapse
|
15
|
Sun Y, Dong T, Yu L, Xu J, Chen K. Planar Growth, Integration, and Applications of Semiconducting Nanowires. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1903945. [PMID: 31746050 DOI: 10.1002/adma.201903945] [Citation(s) in RCA: 19] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/21/2019] [Revised: 10/05/2019] [Indexed: 06/10/2023]
Abstract
Silicon and other inorganic semiconductor nanowires (NWs) have been extensively investigated in the last two decades for constructing high-performance nanoelectronics, sensors, and optoelectronics. For many of these applications, these tiny building blocks have to be integrated into the existing planar electronic platform, where precise location, orientation, and layout controls are indispensable. In the advent of More-than-Moore's era, there are also emerging demands for a programmable growth engineering of the geometry, composition, and line-shape of NWs on planar or out-of-plane 3D sidewall surfaces. Here, the critical technologies established for synthesis, transferring, and assembly of NWs upon planar surface are examined; then, the recent progress of in-plane growth of horizontal NWs directly upon crystalline or patterned substrates, constrained by using nanochannels, an epitaxial interface, or amorphous thin film precursors is discussed. Finally, the unique capabilities of planar growth of NWs in achieving precise guided growth control, programmable geometry, composition, and line-shape engineering are reviewed, followed by their latest device applications in building high-performance field-effect transistors, photodetectors, stretchable electronics, and 3D stacked-channel integration.
Collapse
Affiliation(s)
- Ying Sun
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Taige Dong
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Linwei Yu
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Jun Xu
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Kunji Chen
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| |
Collapse
|
16
|
Ma Z, Yang L, Liu L, Wang S, Peng LM. Silicon-Waveguide-Integrated Carbon Nanotube Optoelectronic System on a Single Chip. ACS NANO 2020; 14:7191-7199. [PMID: 32422043 DOI: 10.1021/acsnano.0c02139] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Monolithic optoelectronic integration based on a single material is a major pursuit in the fields of nanophotonics and nanoelectronics in order to meet the requirements of future fiber-optic telecommunication systems and on-chip optical interconnection systems. However, the incompatibility between silicon-based electronics and germanium or compound semiconductor-based photonics makes it very challenging to realize optoelectronic integration based on a single material. Here, the integration between silicon waveguides and a carbon nanotube (CNT) optoelectronic system is demonstrated. Waveguide-integrated photodetectors based on the CNT exhibit 12.5 mA/W photoresponsivity at 1530 nm, which presents an improvement of 97.6 times enhanced absorption efficiency compared to that without the waveguide. Multiplied output signals of cascading photodetectors are used to control the output of CNT-based logic gates, thereby demonstrating that the CNT-based optoelectronic integration system is compatible with silicon photonics. Our work indicates that carbon nanotubes have the potential for future integration between nanophotonics and nanoelectronics on a single chip.
Collapse
Affiliation(s)
- Ze Ma
- Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics and Research Center for Carbon-based Electronics, Peking University, Beijing 100871, China
| | - Leijing Yang
- State Key Laboratory of Information Photonics and Optical Communications and School of Electronic Engineering, Beijing University of Posts and Telecommunications (BUPT), Beijing 100876, China
| | - Lijun Liu
- Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics and Research Center for Carbon-based Electronics, Peking University, Beijing 100871, China
| | - Sheng Wang
- Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics and Research Center for Carbon-based Electronics, Peking University, Beijing 100871, China
- State Key Laboratory of Advanced Optical Communication Systems and Networks, Department of Electronics, Peking University, Beijing 100871, China
| | - Lian-Mao Peng
- Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics and Research Center for Carbon-based Electronics, Peking University, Beijing 100871, China
| |
Collapse
|
17
|
Liu L, Han J, Xu L, Zhou J, Zhao C, Ding S, Shi H, Xiao M, Ding L, Ma Z, Jin C, Zhang Z, Peng LM. Aligned, high-density semiconducting carbon nanotube arrays for high-performance electronics. Science 2020; 368:850-856. [DOI: 10.1126/science.aba5980] [Citation(s) in RCA: 167] [Impact Index Per Article: 41.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/16/2019] [Accepted: 04/09/2020] [Indexed: 01/22/2023]
Affiliation(s)
- Lijun Liu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Jie Han
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Lin Xu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Jianshuo Zhou
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Chenyi Zhao
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Sujuan Ding
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Hunan 411105, China
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Huiwen Shi
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Mengmeng Xiao
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Li Ding
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Ze Ma
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, China
| | - Chuanhong Jin
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Hunan 411105, China
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Zhiyong Zhang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, China
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Hunan 411105, China
- Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China
| | - Lian-Mao Peng
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Department of Electronics, Peking University, Beijing 100871, China
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Hunan 411105, China
- Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China
| |
Collapse
|
18
|
Zhao C, Tan C, Lien DH, Song X, Amani M, Hettick M, Nyein HYY, Yuan Z, Li L, Scott MC, Javey A. Evaporated tellurium thin films for p-type field-effect transistors and circuits. NATURE NANOTECHNOLOGY 2020; 15:53-58. [PMID: 31844286 DOI: 10.1038/s41565-019-0585-9] [Citation(s) in RCA: 82] [Impact Index Per Article: 20.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/26/2019] [Accepted: 11/04/2019] [Indexed: 05/07/2023]
Abstract
There is an emerging need for semiconductors that can be processed at near ambient temperature with high mobility and device performance. Although multiple n-type options have been identified, the development of their p-type counterparts remains limited. Here, we report the realization of tellurium thin films through thermal evaporation at cryogenic temperatures for fabrication of high-performance wafer-scale p-type field-effect transistors. We achieve an effective hole mobility of ~35 cm2 V-1 s-1, on/off current ratio of ~104 and subthreshold swing of 108 mV dec-1 on an 8-nm-thick film. High-performance tellurium p-type field-effect transistors are fabricated on a wide range of substrates including glass and plastic, further demonstrating the broad applicability of this material. Significantly, three-dimensional circuits are demonstrated by integrating multi-layered transistors on a single chip using sequential lithography, deposition and lift-off processes. Finally, various functional logic gates and circuits are demonstrated.
Collapse
Affiliation(s)
- Chunsong Zhao
- Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Department of Materials Science and Engineering, University of California at Berkeley, Berkeley, CA, USA
| | - Chaoliang Tan
- Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Der-Hsien Lien
- Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Xiaohui Song
- Department of Materials Science and Engineering, University of California at Berkeley, Berkeley, CA, USA
- The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Matin Amani
- Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Mark Hettick
- Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Hnin Yin Yin Nyein
- Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Department of Materials Science and Engineering, University of California at Berkeley, Berkeley, CA, USA
| | - Zhen Yuan
- Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Lu Li
- Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Mary C Scott
- Department of Materials Science and Engineering, University of California at Berkeley, Berkeley, CA, USA
- The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Ali Javey
- Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
| |
Collapse
|
19
|
Corletto A, Shapter JG. Nanoscale Patterning of Carbon Nanotubes: Techniques, Applications, and Future. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 8:2001778. [PMID: 33437571 PMCID: PMC7788638 DOI: 10.1002/advs.202001778] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/13/2020] [Revised: 07/30/2020] [Indexed: 05/09/2023]
Abstract
Carbon nanotube (CNT) devices and electronics are achieving maturity and directly competing or surpassing devices that use conventional materials. CNTs have demonstrated ballistic conduction, minimal scaling effects, high current capacity, low power requirements, and excellent optical/photonic properties; making them the ideal candidate for a new material to replace conventional materials in next-generation electronic and photonic systems. CNTs also demonstrate high stability and flexibility, allowing them to be used in flexible, printable, and/or biocompatible electronics. However, a major challenge to fully commercialize these devices is the scalable placement of CNTs into desired micro/nanopatterns and architectures to translate the superior properties of CNTs into macroscale devices. Precise and high throughput patterning becomes increasingly difficult at nanoscale resolution, but it is essential to fully realize the benefits of CNTs. The relatively long, high aspect ratio structures of CNTs must be preserved to maintain their functionalities, consequently making them more difficult to pattern than conventional materials like metals and polymers. This review comprehensively explores the recent development of innovative CNT patterning techniques with nanoscale lateral resolution. Each technique is critically analyzed and applications for the nanoscale-resolution approaches are demonstrated. Promising techniques and the challenges ahead for future devices and applications are discussed.
Collapse
Affiliation(s)
- Alexander Corletto
- Australian Institute for Bioengineering and NanotechnologyThe University of QueenslandBrisbaneQueensland4072Australia
| | - Joseph G. Shapter
- Australian Institute for Bioengineering and NanotechnologyThe University of QueenslandBrisbaneQueensland4072Australia
| |
Collapse
|
20
|
Koo JH, Song JK, Kim DH. Solution-processed thin films of semiconducting carbon nanotubes and their application to soft electronics. NANOTECHNOLOGY 2019; 30:132001. [PMID: 30605897 DOI: 10.1088/1361-6528/aafbbe] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Semiconducting single-walled carbon nanotube (SWNT) networks are promising for use as channel materials in field-effect transistors (FETs) in next-generation soft electronics, owing to their high intrinsic carrier mobility, mechanical flexibility, potential for low-cost production, and good processability. In this article, we review the recent progress related to carbon nanotube (CNT) devices in soft electronics by describing the materials and devices, processing methods, and example applications in soft electronic systems. First, solution-processed semiconducting SWNT deposition methods along with doping techniques used to achieve stable complementary metal-oxide-semiconductor devices are discussed. Various strategies for developing high-performance SWNT-based FETs, such as the proper material choices for the gates, dielectrics, and sources/drains of FETs, and methods of improving FET performance, such as hysteresis repression in SWNT-based FETs, are described next. These SWNT-based FETs have been used in flexible, stretchable, and wearable electronic devices to realize functionalities that could not be achieved using conventional silicon-based devices. We conclude this review by discussing the challenges faced by and outlook for CNT-based soft electronics.
Collapse
Affiliation(s)
- Ja Hoon Koo
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea. Interdisciplinary Program for Bioengineering, Seoul National University, Seoul 08826, Republic of Korea
| | | | | |
Collapse
|
21
|
Ma Z, Han J, Yao S, Wang S, Peng LM. Improving the Performance and Uniformity of Carbon-Nanotube-Network-Based Photodiodes via Yttrium Oxide Coating and Decoating. ACS APPLIED MATERIALS & INTERFACES 2019; 11:11736-11742. [PMID: 30855129 DOI: 10.1021/acsami.8b21325] [Citation(s) in RCA: 16] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Semiconducting single-walled carbon nanotube thin films can be obtained by conjugated polymer wrapping sorting technique followed by solution deposition and can be utilized as channel materials of field-effect transistors and absorbing layers of photodiodes. However, after the deposition process, there are still polymer molecules wrapping around nanotubes, remaining between nanotubes, and remaining on the thin-film surface, which will cause large nanotube-electrode resistance and tube-tube resistance. Here, we demonstrate an yttrium oxide coating-and-decoating technique that can remove polymers only around electrodes and thus improve the performance of photodiodes without inducing new defects in the device channel. After the treatment of only the contact area, the average short-circuit current of a photodiode increases from 9.1 to 10.7 nA, whereas the average open-circuit voltage increases from 0.25 to 0.30 V. This method also improves device uniformity significantly.
Collapse
Affiliation(s)
- Ze Ma
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics , Peking University , Beijing 100871 , China
| | - Jie Han
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics , Peking University , Beijing 100871 , China
| | - Shuo Yao
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics , Peking University , Beijing 100871 , China
| | - Sheng Wang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics , Peking University , Beijing 100871 , China
| | - Lian-Mao Peng
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics , Peking University , Beijing 100871 , China
| |
Collapse
|
22
|
Qiu S, Wu K, Gao B, Li L, Jin H, Li Q. Solution-Processing of High-Purity Semiconducting Single-Walled Carbon Nanotubes for Electronics Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1800750. [PMID: 30062782 DOI: 10.1002/adma.201800750] [Citation(s) in RCA: 56] [Impact Index Per Article: 11.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/02/2018] [Revised: 04/14/2018] [Indexed: 06/08/2023]
Abstract
High-purity semiconducting single-walled carbon nanotubes (s-SWCNTs) are of paramount significance for the construction of next-generation electronics. Until now, a number of elaborate sorting and purification techniques for s-SWCNTs have been developed, among which solution-based sorting methods show unique merits in the scale production, high purity, and large-area film formation. Here, the recent progress in the solution processing of s-SWCNTs and their application in electronic devices is systematically reviewed. First, the solution-based sorting and purification of s-SWCNTs are described, and particular attention is paid to the recent advance in the conjugated polymer-based sorting strategy. Subsequently, the solution-based deposition and morphology control of a s-SWCNT thin film on a surface are introduced, which focus on the strategies for network formation and alignment of SWCNTs. Then, the recent advances in electronic devices based on s-SWCNTs are reviewed with emphasis on nanoscale s-SWCNTs' high-performance integrated circuits and s-SWCNT-based thin-film transistors (TFT) array and circuits. Lastly, the existing challenges and development trends for the s-SWCNTs and electronic devices are briefly discussed. The aim is to provide some useful information and inspiration for the sorting and purification of s-SWCNTs, as well as the construction of electronic devices with s-SWCNTs.
Collapse
Affiliation(s)
- Song Qiu
- Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science, Suzhou, 215123, P.R. China
| | - Kunjie Wu
- Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science, Suzhou, 215123, P.R. China
| | - Bing Gao
- School of Chemical and Material Engineering, Jiangnan University, Wuxi, 214122, P.R. China
| | - Liqiang Li
- Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science, Suzhou, 215123, P.R. China
| | - Hehua Jin
- Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science, Suzhou, 215123, P.R. China
| | - Qingwen Li
- Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science, Suzhou, 215123, P.R. China
| |
Collapse
|
23
|
Hirotani J, Kishimoto S, Ohno Y. Origins of the variability of the electrical characteristics of solution-processed carbon nanotube thin-film transistors and integrated circuits. NANOSCALE ADVANCES 2019; 1:636-642. [PMID: 36132255 PMCID: PMC9473192 DOI: 10.1039/c8na00184g] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/01/2018] [Accepted: 10/15/2018] [Indexed: 05/06/2023]
Abstract
Carbon nanotube (CNT) thin-film transistors based on solution processing have great potential for use in future flexible and wearable device technologies. However, the considerable variability of their electrical characteristics remains a significant obstacle to their practical use. In this work, we investigated the origins of the variability of these electrical characteristics by performing statistical analysis based on spatial autocorrelation and Monte Carlo simulation. The spatial autocorrelation of the on-current decreased with increasing distance on the order of millimetres, showing that macroscopic non-uniformity of the CNT density was one of the causes of the characteristic variability. In addition, even in the local regime where the macroscopic variability is negligible, the variability was greater than that expected based on the Monte Carlo simulation. The CNT aggregation could be attributed to microscopic variability. We also investigated the variability of the properties of integrated circuits such as inverters and ring oscillators fabricated on flexible plastic film. All of the inverters worked well, and their threshold voltage variations were fairly small. As the number of stages in the ring oscillator increased, the yield decreased, although the oscillation frequency variability improved.
Collapse
Affiliation(s)
- Jun Hirotani
- Department of Electronics, Nagoya University Furo-cho, Chikusa-ku Nagoya 464-8603 Japan
| | - Shigeru Kishimoto
- Department of Electronics, Nagoya University Furo-cho, Chikusa-ku Nagoya 464-8603 Japan
| | - Yutaka Ohno
- Department of Electronics, Nagoya University Furo-cho, Chikusa-ku Nagoya 464-8603 Japan
- Institute of Materials and Systems for Sustainability, Nagoya University Furo-cho, Chikusa-ku Nagoya 464-8603 Japan
| |
Collapse
|
24
|
Hirotani J, Ohno Y. Carbon Nanotube Thin Films for High-Performance Flexible Electronics Applications. Top Curr Chem (Cham) 2019; 377:3. [PMID: 30600416 DOI: 10.1007/s41061-018-0227-y] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/18/2018] [Accepted: 12/11/2018] [Indexed: 11/25/2022]
Abstract
Carbon nanotube thin films have attracted considerable attention because of their potential use in flexible/stretchable electronics applications, such as flexible displays and wearable health monitoring devices. Due to recent progress in the post-purification processes of carbon nanotubes, high-purity semiconducting carbon nanotubes can be obtained for thin-film transistor applications. One of the key challenges for the practical use of carbon nanotube thin-film transistors is the thin-film formation technology, which is required for achieving not only high performance but also uniform device characteristics. In this paper, after describing the fundamental thin-film formation techniques, we review the recent progress of thin-film formation technologies for carbon nanotube-based flexible electronics.
Collapse
Affiliation(s)
- Jun Hirotani
- Department of Electronics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8603, Japan
| | - Yutaka Ohno
- Department of Electronics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8603, Japan.
- Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8603, Japan.
| |
Collapse
|
25
|
Xu H, Yi W, Li D, Zhang P, Yoo S, Bai L, Hou J, Hou X. Obtaining high mechanical performance silk fibers by feeding purified carbon nanotube/lignosulfonate composite to silkworms. RSC Adv 2019; 9:3558-3569. [PMID: 35518113 PMCID: PMC9060236 DOI: 10.1039/c8ra09934k] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/03/2018] [Accepted: 01/14/2019] [Indexed: 11/21/2022] Open
Abstract
Silkworm fibers have attracted widespread attention for their superb glossy texture and promising mechanical performance. The mechanical properties can be reinforced with carbon nanofillers, particularly carbon nanotubes (CNTs), depending on the CNT content in the silk fibers. In order to increase the CNT content, lignosulfonate (LGS) was used as a surfactant to ameliorate the CNT solubility, dispersibility, and biocompatibility. The resulting CNT/LGS nano-composite was further processed through an additional purification method to remove excess surfactant and enhance the CNT/LGS ratio. Then the purified biocompatible single and multiple-walled CNTs were fed to silkworms, leading to a large CNT content in the resulting silk fibers. Reinforced silk fibers were produced with a mechanical strength as high as 1.07 GPa and a strain of 16.8%. The toughness modulus is 1.69 times than that of the unpurified group. The CNT-embedded silk fibers were characterized via Raman spectrometry and thermogravimetric analysis (TGA), demonstrating that the CNT content in the silk fibers increased 1.5-fold in comparison to the unpurified group. The increased CNT content not only contributed to the self-assembly into buffering knots of silk fibers, but it also enhanced the conductivity of graphitized silk. Our coating and purification strategies provide a potential facile way to obtain natural silk fibers with high mechanical performance. Silkworm fibers have attracted widespread attention for their superb glossy texture and promising mechanical performance.![]()
Collapse
Affiliation(s)
- Hao Xu
- Key Laboratory for Information Photonic Technology of Shaanxi Province
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education
- School of Electronics and Information Engineering
- Xi'an Jiaotong University
- Xi'an 710049
| | - Wenhui Yi
- Key Laboratory for Information Photonic Technology of Shaanxi Province
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education
- School of Electronics and Information Engineering
- Xi'an Jiaotong University
- Xi'an 710049
| | - Dongfan Li
- Frontier Institute of Science and Technology
- Xi'an Jiaotong University
- Xi'an 710054
- P. R. China
| | - Ping Zhang
- Key Laboratory for Information Photonic Technology of Shaanxi Province
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education
- School of Electronics and Information Engineering
- Xi'an Jiaotong University
- Xi'an 710049
| | - Sweejiang Yoo
- Key Laboratory for Information Photonic Technology of Shaanxi Province
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education
- School of Electronics and Information Engineering
- Xi'an Jiaotong University
- Xi'an 710049
| | - Lei Bai
- Key Laboratory for Information Photonic Technology of Shaanxi Province
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education
- School of Electronics and Information Engineering
- Xi'an Jiaotong University
- Xi'an 710049
| | - Jin Hou
- Department of Pharmacology
- School of Basic Medical Sciences
- Xi'an Medical University
- Xi'an 710021
- People's Republic of China
| | - Xun Hou
- Key Laboratory for Information Photonic Technology of Shaanxi Province
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education
- School of Electronics and Information Engineering
- Xi'an Jiaotong University
- Xi'an 710049
| |
Collapse
|
26
|
Lv Z, Liu D, Yu X, Lv Q, Gao B, Jin H, Qiu S, Men C, Song Q, Li Q. Controllable etching-induced contact enhancement for high-performance carbon nanotube thin-film transistors. RSC Adv 2019; 9:10578-10583. [PMID: 35515320 PMCID: PMC9062493 DOI: 10.1039/c9ra01052a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/09/2019] [Accepted: 03/23/2019] [Indexed: 11/21/2022] Open
Abstract
Semiconducting single-walled carbon nanotubes (s-SWNTs) show great promises in advanced electronics. However, contact resistance between the nanotubes and metal electrode has long been a bottleneck to the development of s-SWNTs in high-performance electronic devices. Here we demonstrate a simple and controllable strategy for enhancing the electrode contact and therefore the performance of s-SWNT thin film transistors by plasma etching treatment, which effectively removes the polymer residues, including the photoresist and the conjugated molecules, adsorbed on the surface of s-SWNTs. As a result, the contact resistance is reduced by 3 times and the carrier mobility rises by up to 70%. Our method is compatible with current silicon semiconductor processing technology, making it a viable effective approach to large-scale application of s-SWNTs in the electronics industry. Controllable plasma etching induced contact enhancement for high-performance carbon nanotube thin-film transistors and analysis of the mechanism.![]()
Collapse
Affiliation(s)
- Zhengxia Lv
- Key Laboratory of Multifuctional Nanomaterials and System Integration
- Suzhou Institute of Nano-Tech and Nano-Bionics
- Chinese Academy of Science
- Suzhou
- P. R. China
| | - Dan Liu
- Key Laboratory of Multifuctional Nanomaterials and System Integration
- Suzhou Institute of Nano-Tech and Nano-Bionics
- Chinese Academy of Science
- Suzhou
- P. R. China
| | - Xiaoqin Yu
- College of Chemical and Material Engineering
- Jiangnan University
- Wuxi 214122
- P. R. China
| | - Qianjin Lv
- School of Energy and Power Engineering
- University of Shanghai for Science and Technology
- Shanghai 200093
- P. R. China
| | - Bing Gao
- College of Chemical and Material Engineering
- Jiangnan University
- Wuxi 214122
- P. R. China
| | - Hehua Jin
- Key Laboratory of Multifuctional Nanomaterials and System Integration
- Suzhou Institute of Nano-Tech and Nano-Bionics
- Chinese Academy of Science
- Suzhou
- P. R. China
| | - Song Qiu
- Key Laboratory of Multifuctional Nanomaterials and System Integration
- Suzhou Institute of Nano-Tech and Nano-Bionics
- Chinese Academy of Science
- Suzhou
- P. R. China
| | - Chuanling Men
- School of Energy and Power Engineering
- University of Shanghai for Science and Technology
- Shanghai 200093
- P. R. China
| | - Qijun Song
- College of Chemical and Material Engineering
- Jiangnan University
- Wuxi 214122
- P. R. China
| | - Qingwen Li
- Key Laboratory of Multifuctional Nanomaterials and System Integration
- Suzhou Institute of Nano-Tech and Nano-Bionics
- Chinese Academy of Science
- Suzhou
- P. R. China
| |
Collapse
|
27
|
Zhu MG, Si J, Zhang Z, Peng LM. Aligning Solution-Derived Carbon Nanotube Film with Full Surface Coverage for High-Performance Electronics Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1707068. [PMID: 29696705 DOI: 10.1002/adma.201707068] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/03/2017] [Revised: 02/17/2018] [Indexed: 06/08/2023]
Abstract
The main challenge for application of solution-derived carbon nanotubes (CNTs) in high performance field-effect transistor (FET) is how to align CNTs into an array with high density and full surface coverage. A directional shrinking transfer method is developed to realize high density aligned array based on randomly orientated CNT network film. Through transferring a solution-derived CNT network film onto a stretched retractable film followed by a shrinking process, alignment degree and density of CNT film increase with the shrinking multiple. The quadruply shrunk CNT films present well alignment, which is identified by the polarized Raman spectroscopy and electrical transport measurements. Based on the high quality and high density aligned CNT array, the fabricated FETs with channel length of 300 nm present ultrahigh performance including on-state current Ion of 290 µA µm-1 (Vds = -1.5 V and Vgs = -2 V) and peak transconductance gm of 150 µS µm-1 , which are, respectively, among the highest corresponding values in the reported CNT array FETs. High quality and high semiconducting purity CNT arrays with high density and full coverage obtained through this method promote the development of high performance CNT-based electronics.
Collapse
Affiliation(s)
- Ma-Guang Zhu
- Key Laboratory for the Physics and Chemistry of Nanodevices, and Department of Electronics, Peking University, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China
| | - Jia Si
- Key Laboratory for the Physics and Chemistry of Nanodevices, and Department of Electronics, Peking University, Beijing, 100871, China
| | - Zhiyong Zhang
- Key Laboratory for the Physics and Chemistry of Nanodevices, and Department of Electronics, Peking University, Beijing, 100871, China
| | - Lian-Mao Peng
- Key Laboratory for the Physics and Chemistry of Nanodevices, and Department of Electronics, Peking University, Beijing, 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, China
| |
Collapse
|
28
|
Si J, Zhong D, Xu H, Xiao M, Yu C, Zhang Z, Peng LM. Scalable Preparation of High-Density Semiconducting Carbon Nanotube Arrays for High-Performance Field-Effect Transistors. ACS NANO 2018; 12:627-634. [PMID: 29303553 DOI: 10.1021/acsnano.7b07665] [Citation(s) in RCA: 24] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
Although chemical vapor deposition (CVD)-grown carbon nanotube (CNT) arrays are considered ideal materials for constructing high-performance field-effect transistors (FETs) and integrated circuits (ICs), a significant gap remains between the required and achieved densities and purities of CNT arrays. Here, we develop a directional shrinking transfer method to realize up to 10-fold density amplification of CNT array films without introducing detectable damage or defects. In addition, the method improves the film uniformity while retaining the perfect alignment and high carrier mobility of 1600 cm2 V-1 s-1 of CVD-grown CNT arrays. By combining the density amplification method with the thermocapillary flow method developed by Rogers et al., semiconducting CNT arrays with high densities and high qualities are obtained. High-performance FETs with a channel length of 200 nm are demonstrated using these high-density semiconducting CNT arrays, yielding a record-high on-state current density of 150 μA/μm, a peak transconductance of 80 μS/μm, and a current on/off ratio of more than 104 among the CVD-grown CNT-based FETs.
Collapse
Affiliation(s)
- Jia Si
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University , Beijing 100871, China
| | - Donglai Zhong
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University , Beijing 100871, China
| | - Haitao Xu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University , Beijing 100871, China
| | - Mengmeng Xiao
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University , Beijing 100871, China
| | - Chenxi Yu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University , Beijing 100871, China
| | - Zhiyong Zhang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University , Beijing 100871, China
| | - Lian-Mao Peng
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University , Beijing 100871, China
| |
Collapse
|
29
|
Koo JH, Jeong S, Shim HJ, Son D, Kim J, Kim DC, Choi S, Hong JI, Kim DH. Wearable Electrocardiogram Monitor Using Carbon Nanotube Electronics and Color-Tunable Organic Light-Emitting Diodes. ACS NANO 2017; 11:10032-10041. [PMID: 28837773 DOI: 10.1021/acsnano.7b04292] [Citation(s) in RCA: 91] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/14/2023]
Abstract
With the rapid advances in wearable electronics, the research on carbon-based and/or organic materials and devices has become increasingly important, owing to their advantages in terms of cost, weight, and mechanical deformability. Here, we report an effective material and device design for an integrative wearable cardiac monitor based on carbon nanotube (CNT) electronics and voltage-dependent color-tunable organic light-emitting diodes (CTOLEDs). A p-MOS inverter based on four CNT transistors allows high amplification and thereby successful acquisition of the electrocardiogram (ECG) signals. In the CTOLEDs, an ultrathin exciton block layer of bis[2-(diphenylphosphino)phenyl]ether oxide is used to manipulate the balance of charges between two adjacent emission layers, bis[2-(4,6-difluorophenyl)pyridinato-C2,N](picolinato)iridium(III) and bis(2-phenylquinolyl-N,C(2'))iridium(acetylacetonate), which thereby produces different colors with respect to applied voltages. The ultrathin nature of the fabricated devices supports extreme wearability and conformal integration of the sensor on human skin. The wearable CTOLEDs integrated with CNT electronics are used to display human ECG changes in real-time using tunable colors. These materials and device strategies provide opportunities for next generation wearable health indicators.
Collapse
Affiliation(s)
- Ja Hoon Koo
- Center for Nanoparticle Research, Institute for Basic Science (IBS) , Seoul 08826, Republic of Korea
| | | | - Hyung Joon Shim
- Center for Nanoparticle Research, Institute for Basic Science (IBS) , Seoul 08826, Republic of Korea
| | - Donghee Son
- Center for Nanoparticle Research, Institute for Basic Science (IBS) , Seoul 08826, Republic of Korea
| | - Jaemin Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS) , Seoul 08826, Republic of Korea
| | - Dong Chan Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS) , Seoul 08826, Republic of Korea
| | - Suji Choi
- Center for Nanoparticle Research, Institute for Basic Science (IBS) , Seoul 08826, Republic of Korea
| | | | - Dae-Hyeong Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS) , Seoul 08826, Republic of Korea
| |
Collapse
|
30
|
Chortos A, Zhu C, Oh JY, Yan X, Pochorovski I, To JWF, Liu N, Kraft U, Murmann B, Bao Z. Investigating Limiting Factors in Stretchable All-Carbon Transistors for Reliable Stretchable Electronics. ACS NANO 2017; 11:7925-7937. [PMID: 28745872 DOI: 10.1021/acsnano.7b02458] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Stretchable form factors enable electronic devices to conform to irregular 3D structures, including soft and moving entities. Intrinsically stretchable devices have potential advantages of high surface coverage of active devices, improved durability, and reduced processing costs. This work describes intrinsically stretchable transistors composed of single-walled carbon nanotube (SWNT) electrodes and semiconductors and a dielectric that consists of a nonpolar elastomer. The use of a nonpolar elastomer dielectric enabled hysteresis-free device characteristics. Compared to devices on SiO2 dielectrics, stretchable devices with nonpolar dielectrics showed lower mobility in ambient conditions because of the absence of doping from water. The effect of a SWNT band gap on device characteristics was investigated by using different SWNT sources as the semiconductor. Large-band-gap SWNTs exhibited trap-limited behavior caused by the low capacitance of the dielectric. In contrast, high-current devices based on SWNTs with smaller band gaps were more limited by contact resistance. Of the tested SWNT sources, SWNTs with a maximum diameter of 1.5 nm performed the best, with a mobility of 15.4 cm2/Vs and an on/off ratio >103 for stretchable transistors. Large-band-gap devices showed increased sensitivity to strain because of a pronounced dependence on the dielectric thickness, whereas contact-limited devices showed substantially less strain dependence.
Collapse
Affiliation(s)
- Alex Chortos
- Department of Materials Science & Engineering, ‡Department of Electrical Engineering, and §Department of Chemical Engineering, Stanford University , Stanford, California 94305, United States
| | - Chenxin Zhu
- Department of Materials Science & Engineering, ‡Department of Electrical Engineering, and §Department of Chemical Engineering, Stanford University , Stanford, California 94305, United States
| | - Jin Young Oh
- Department of Materials Science & Engineering, ‡Department of Electrical Engineering, and §Department of Chemical Engineering, Stanford University , Stanford, California 94305, United States
| | - Xuzhou Yan
- Department of Materials Science & Engineering, ‡Department of Electrical Engineering, and §Department of Chemical Engineering, Stanford University , Stanford, California 94305, United States
| | - Igor Pochorovski
- Department of Materials Science & Engineering, ‡Department of Electrical Engineering, and §Department of Chemical Engineering, Stanford University , Stanford, California 94305, United States
| | - John W-F To
- Department of Materials Science & Engineering, ‡Department of Electrical Engineering, and §Department of Chemical Engineering, Stanford University , Stanford, California 94305, United States
| | - Nan Liu
- Department of Materials Science & Engineering, ‡Department of Electrical Engineering, and §Department of Chemical Engineering, Stanford University , Stanford, California 94305, United States
| | - Ulrike Kraft
- Department of Materials Science & Engineering, ‡Department of Electrical Engineering, and §Department of Chemical Engineering, Stanford University , Stanford, California 94305, United States
| | - Boris Murmann
- Department of Materials Science & Engineering, ‡Department of Electrical Engineering, and §Department of Chemical Engineering, Stanford University , Stanford, California 94305, United States
| | - Zhenan Bao
- Department of Materials Science & Engineering, ‡Department of Electrical Engineering, and §Department of Chemical Engineering, Stanford University , Stanford, California 94305, United States
| |
Collapse
|
31
|
Kumar B, Falk AL, Afzali A, Tulevski GS, Oida S, Han SJ, Hannon JB. Spatially Selective, High-Density Placement of Polyfluorene-Sorted Semiconducting Carbon Nanotubes in Organic Solvents. ACS NANO 2017; 11:7697-7701. [PMID: 28749135 DOI: 10.1021/acsnano.7b00088] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
High-performance logic based on carbon nanotubes (CNTs) requires high-density arrays of selectively placed semiconducting CNTs. Although polymer-wrapping methods can allow CNTs to be sorted to a >99.9% semiconducting purity, patterning these polymer-wrapped CNTs is an outstanding problem. We report the directed self-assembly of polymer-coated semiconducting CNTs using self-assembled monolayers that bind CNTs into arrays of patterned trenches. We demonstrate that CNTs can be placed into 100 nm wide HfO2 trenches with an electrical connection yield as high as 90% and into 50 nm wide trenches with a yield as high as 70%. Our directed self-assembly method is an important step forward in pitch scaling.
Collapse
Affiliation(s)
- Bharat Kumar
- IBM T. J. Watson Research Center , 1101 Kitchawan Road, Yorktown Heights, New York 10598, United States
| | - Abram L Falk
- IBM T. J. Watson Research Center , 1101 Kitchawan Road, Yorktown Heights, New York 10598, United States
| | - Ali Afzali
- IBM T. J. Watson Research Center , 1101 Kitchawan Road, Yorktown Heights, New York 10598, United States
| | - George S Tulevski
- IBM T. J. Watson Research Center , 1101 Kitchawan Road, Yorktown Heights, New York 10598, United States
| | - Satoshi Oida
- IBM T. J. Watson Research Center , 1101 Kitchawan Road, Yorktown Heights, New York 10598, United States
| | - Shu-Jen Han
- IBM T. J. Watson Research Center , 1101 Kitchawan Road, Yorktown Heights, New York 10598, United States
| | - James B Hannon
- IBM T. J. Watson Research Center , 1101 Kitchawan Road, Yorktown Heights, New York 10598, United States
| |
Collapse
|
32
|
Wei L, Flavel BS, Li W, Krupke R, Chen Y. Exploring the upper limit of single-walled carbon nanotube purity by multiple-cycle aqueous two-phase separation. NANOSCALE 2017; 9:11640-11646. [PMID: 28770923 DOI: 10.1039/c7nr03302h] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
Ultrahigh purity semiconducting single-walled carbon nanotubes (S-SWCNTs) are required for high-performance transistors. Aqueous two-phase (ATP) separation is an attractive method to obtain such SWCNTs due to its simplicity and scalability. This work targeted two questions; namely what is the upper limit of S-SWCNT purity that can be achieved by multiple cycles of ATP separation from the most commonly used polyethylene glycol and dextran system and how accurately can commonly used methods characterize the improvement in purity? SWCNT purity in nanotube dispersions obtained by multi-cycle ATP separation (2, 4, 6 and 8 cycles) was evaluated by three methods, including UV-vis-NIR absorption spectroscopy analysis, performance of thin-film field effect transistors (FETs) prepared by drop casting and short-channel FET devices prepared by dielectrophoresis deposition. Absorption spectroscopic analysis and the performance of the thin-film FET devices can hardly differentiate metallic SWCNT residues in the dispersions obtained after 4 cycles with the purity above 99.5%, and the short channel FET devices prepared by dielectrophoresis deposition are more sensitive towards tiny metallic SWCNT residues. A new method was also demonstrated to visualize the minor metallic content in the nanotube suspension using voltage contrast imaging in a scanning electron microscope, which enables rapid screening of many devices and the accurate obtainment of metallic content without performing a large number of individual transconductance measurements.
Collapse
Affiliation(s)
- Li Wei
- The University of Sydney, School of Chemical and Biomolecular Engineering, NSW 2006, Australia.
| | | | | | | | | |
Collapse
|
33
|
Cao Y, Cong S, Cao X, Wu F, Liu Q, Amer MR, Zhou C. Review of Electronics Based on Single-Walled Carbon Nanotubes. Top Curr Chem (Cham) 2017; 375:75. [DOI: 10.1007/s41061-017-0160-5] [Citation(s) in RCA: 34] [Impact Index Per Article: 4.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/06/2017] [Accepted: 07/11/2017] [Indexed: 10/19/2022]
|
34
|
Chortos A, Pochorovski I, Lin P, Pitner G, Yan X, Gao TZ, To JWF, Lei T, Will JW, Wong HSP, Bao Z. Universal Selective Dispersion of Semiconducting Carbon Nanotubes from Commercial Sources Using a Supramolecular Polymer. ACS NANO 2017; 11:5660-5669. [PMID: 28528552 DOI: 10.1021/acsnano.7b01076] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Selective extraction of semiconducting carbon nanotubes is a key step in the production of high-performance, solution-processed electronics. Here, we describe the ability of a supramolecular sorting polymer to selectively disperse semiconducting carbon nanotubes from five commercial sources with diameters ranging from 0.7 to 2.2 nm. The sorting purity of the largest-diameter nanotubes (1.4 to 2.2 nm; from Tuball) was confirmed by short channel measurements to be 97.5%. Removing the sorting polymer by acid-induced disassembly increased the transistor mobility by 94 and 24% for medium-diameter and large-diameter carbon nanotubes, respectively. Among the tested single-walled nanotube sources, the highest transistor performance of 61 cm2/V·s and on/off ratio >104 were realized with arc discharge carbon nanotubes with a diameter range from 1.2 to 1.7 nm. The length and quality of nanotubes sorted from different sources is compared using measurements from atomic force microscopy and Raman spectroscopy. The transistor mobility is found to correlate with the G/D ratio extracted from the Raman spectra.
Collapse
Affiliation(s)
- Alex Chortos
- Department of Materials Science & Engineering, ‡Department of Chemical Engineering, and §Department of Electrical Engineering, Stanford University , Stanford, California 94305, United States
| | - Igor Pochorovski
- Department of Materials Science & Engineering, ‡Department of Chemical Engineering, and §Department of Electrical Engineering, Stanford University , Stanford, California 94305, United States
| | - Pei Lin
- Department of Materials Science & Engineering, ‡Department of Chemical Engineering, and §Department of Electrical Engineering, Stanford University , Stanford, California 94305, United States
| | - Gregory Pitner
- Department of Materials Science & Engineering, ‡Department of Chemical Engineering, and §Department of Electrical Engineering, Stanford University , Stanford, California 94305, United States
| | - Xuzhou Yan
- Department of Materials Science & Engineering, ‡Department of Chemical Engineering, and §Department of Electrical Engineering, Stanford University , Stanford, California 94305, United States
| | - Theodore Z Gao
- Department of Materials Science & Engineering, ‡Department of Chemical Engineering, and §Department of Electrical Engineering, Stanford University , Stanford, California 94305, United States
| | - John W F To
- Department of Materials Science & Engineering, ‡Department of Chemical Engineering, and §Department of Electrical Engineering, Stanford University , Stanford, California 94305, United States
| | - Ting Lei
- Department of Materials Science & Engineering, ‡Department of Chemical Engineering, and §Department of Electrical Engineering, Stanford University , Stanford, California 94305, United States
| | - John W Will
- Department of Materials Science & Engineering, ‡Department of Chemical Engineering, and §Department of Electrical Engineering, Stanford University , Stanford, California 94305, United States
| | - H-S Philip Wong
- Department of Materials Science & Engineering, ‡Department of Chemical Engineering, and §Department of Electrical Engineering, Stanford University , Stanford, California 94305, United States
| | - Zhenan Bao
- Department of Materials Science & Engineering, ‡Department of Chemical Engineering, and §Department of Electrical Engineering, Stanford University , Stanford, California 94305, United States
| |
Collapse
|
35
|
Zhao Y, Xiao X, Huo Y, Wang Y, Zhang T, Jiang K, Wang J, Fan S, Li Q. Influence of Asymmetric Contact Form on Contact Resistance and Schottky Barrier, and Corresponding Applications of Diode. ACS APPLIED MATERIALS & INTERFACES 2017; 9:18945-18955. [PMID: 28505402 DOI: 10.1021/acsami.7b04076] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We have fabricated carbon nanotube and MoS2 field-effect transistors with asymmetric contact forms of source-drain electrodes, from which we found the current directionality of the devices and different contact resistances under the two current directions. By designing various structures, we can conclude that the asymmetric electrical performance was caused by the difference in the effective Schottky barrier height (ΦSB) caused by the different contact forms. A detailed temperature-dependent study was used to extract and compare the ΦSB for both contact forms of CNT and MoS2 devices; we found that the ΦSB for the metal-on-semiconductor form was much lower than that of the semiconductor-on-metal form and is suitable for all p-type, n-type, or ambipolar semiconductors. This conclusion is meaningful with respect to the design and application of nanomaterial electronic devices. Additionally, using the difference in barrier height caused by the contact forms, we have also proposed and fabricated Schottky barrier diodes with a current ratio up to 104; rectifying circuits consisting of these diodes were able to work in a wide frequency range. This design avoided the use of complex chemical doping or heterojunction methods to achieve fundamental diodes that are relatively simple and use only a single material; these may be suitable for future application in nanoelectronic radio frequency or integrated circuits.
Collapse
Affiliation(s)
- Yudan Zhao
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University , Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100084, China
| | - Xiaoyang Xiao
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University , Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100084, China
| | - Yujia Huo
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University , Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100084, China
| | - Yingcheng Wang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University , Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100084, China
| | - Tianfu Zhang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University , Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100084, China
| | - Kaili Jiang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University , Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100084, China
| | - Jiaping Wang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University , Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100084, China
| | - Shoushan Fan
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University , Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100084, China
| | - Qunqing Li
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University , Beijing 100084, China
- Collaborative Innovation Center of Quantum Matter , Beijing 100084, China
| |
Collapse
|
36
|
Zhong D, Zhang Z, Peng LM. Carbon nanotube radio-frequency electronics. NANOTECHNOLOGY 2017; 28:212001. [PMID: 28362635 DOI: 10.1088/1361-6528/aa6a9e] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Carbon nanotube (CNT) is considered a promising material for radio-frequency (RF) applications, owing to its high carrier mobility and saturated drift velocity, as well as ultra-small intrinsic gate capacitance. Here, we review progress on CNT-based devices and integrated circuits for RF applications, including theoretical projection of RF performance of CNT-based devices, preparation of CNT materials, fabrication, optimization of RF field-effect transistors (FETs) structures, and ambipolar FET-based RF applications, and we outline challenges and prospects of CNT-based RF applications.
Collapse
Affiliation(s)
- Donglai Zhong
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People's Republic of China
| | | | | |
Collapse
|
37
|
Park RS, Hills G, Sohn J, Mitra S, Shulaker MM, Wong HSP. Hysteresis-Free Carbon Nanotube Field-Effect Transistors. ACS NANO 2017; 11:4785-4791. [PMID: 28463503 DOI: 10.1021/acsnano.7b01164] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
While carbon nanotube (CNT) field-effect transistors (CNFETs) promise high-performance and energy-efficient digital systems, large hysteresis degrades these potential CNFET benefits. As hysteresis is caused by traps surrounding the CNTs, previous works have shown that clean interfaces that are free of traps are important to minimize hysteresis. Our previous findings on the sources and physics of hysteresis in CNFETs enabled us to understand the influence of gate dielectric scaling on hysteresis. To begin with, we validate through simulations how scaling the gate dielectric thickness results in greater-than-expected benefits in reducing hysteresis. Leveraging this insight, we experimentally demonstrate reducing hysteresis to <0.5% of the gate-source voltage sweep range using a very large-scale integration compatible and solid-state technology, simply by fabricating CNFETs with a thin effective oxide thickness of 1.6 nm. However, even with negligible hysteresis, large subthreshold swing is still observed in the CNFETs with multiple CNTs per transistor. We show that the cause of large subthreshold swing is due to threshold voltage variation between individual CNTs. We also show that the source of this threshold voltage variation is not explained solely by variations in CNT diameters (as is often ascribed). Rather, other factors unrelated to the CNTs themselves (i.e., process variations, random fixed charges at interfaces) are a significant factor in CNT threshold voltage variations and thus need to be further improved.
Collapse
Affiliation(s)
| | | | | | | | - Max M Shulaker
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States
| | | |
Collapse
|
38
|
Yu X, Liu D, Kang L, Yang Y, Zhang X, Lv Q, Qiu S, Jin H, Song Q, Zhang J, Li Q. Recycling Strategy for Fabricating Low-Cost and High-Performance Carbon Nanotube TFT Devices. ACS APPLIED MATERIALS & INTERFACES 2017; 9:15719-15726. [PMID: 28426932 DOI: 10.1021/acsami.7b02964] [Citation(s) in RCA: 18] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
High-purity semiconducting single-walled carbon nanotubes (s-SWNTs) can be obtained by conjugated polymer wrapping. However, further purification of sorted s-SWNTs and high costs of raw materials are still challenges to practical applications. It is inevitable that a lot of polymers still cover the surface of s-SWNTs after separation, and the cost of the polymer is relatively higher than that of SWNTs. Here, we demonstrated a facile isolated process to improve the quality of s-SWNT solutions and films significantly. Compared with the untreated s-SWNTs, the contact resistance between the s-SWNT and the electrode is reduced by 20 times, and the thin-film transistors show 300% enhancement of current density. In this process, most of the polymers can be recycled and reused directly without any purification, which can greatly decrease the cost for s-SWNT separation. The results presented herein demonstrate a new scalable and low-cost approach for large-scale application of s-SWNTs in the electronics industry.
Collapse
Affiliation(s)
- Xiaoqin Yu
- School of Chemical and Material Engineering, Jiangnan University , Wuxi 214122, PR China
- Key Laboratory of Nanodevices and Applications Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Science , Ruoshui Road 398, Suzhou 215123, PR China
| | - Dan Liu
- Key Laboratory of Nanodevices and Applications Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Science , Ruoshui Road 398, Suzhou 215123, PR China
- College of Chemistry and Molecular Engineering, Peking University , Beijing 100871, PR China
| | - Lixing Kang
- Key Laboratory of Nanodevices and Applications Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Science , Ruoshui Road 398, Suzhou 215123, PR China
- College of Chemistry and Molecular Engineering, Peking University , Beijing 100871, PR China
| | - Yi Yang
- Key Laboratory of Nanodevices and Applications Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Science , Ruoshui Road 398, Suzhou 215123, PR China
| | - Xiaopin Zhang
- Key Laboratory of Nanodevices and Applications Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Science , Ruoshui Road 398, Suzhou 215123, PR China
| | - Qianjin Lv
- Key Laboratory of Nanodevices and Applications Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Science , Ruoshui Road 398, Suzhou 215123, PR China
| | - Song Qiu
- Key Laboratory of Nanodevices and Applications Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Science , Ruoshui Road 398, Suzhou 215123, PR China
| | - Hehua Jin
- Key Laboratory of Nanodevices and Applications Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Science , Ruoshui Road 398, Suzhou 215123, PR China
| | - Qijun Song
- School of Chemical and Material Engineering, Jiangnan University , Wuxi 214122, PR China
| | - Jin Zhang
- College of Chemistry and Molecular Engineering, Peking University , Beijing 100871, PR China
| | - Qingwen Li
- Key Laboratory of Nanodevices and Applications Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Science , Ruoshui Road 398, Suzhou 215123, PR China
| |
Collapse
|
39
|
Yang Y, Wang Z, Xu Z, Wu K, Yu X, Chen X, Meng Y, Li H, Qiu S, Jin H, Li L, Li Q. Low Hysteresis Carbon Nanotube Transistors Constructed via a General Dry-Laminating Encapsulation Method on Diverse Surfaces. ACS APPLIED MATERIALS & INTERFACES 2017; 9:14292-14300. [PMID: 28375600 DOI: 10.1021/acsami.7b02684] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Electrical hysteresis in carbon nanotube thin-film transistor (CNTTFT) due to surface adsorption of H2O/O2 is a severe obstacle for practical applications. The conventional encapsulation methods based on vacuum-deposited inorganic materials or wet-coated organic materials have some limitations. In this work, we develop a general and highly efficient dry-laminating encapsulation method to reduce the hysteresis of CNTTFTs, which may simultaneously realize the construction and encapsulation of CNTTFT. Furthermore, by virtue of dry procedure and wide compatibility of PMMA, this method is suitable for the construction of CNTTFT on diverse surface including both inorganic and organic dielectric materials. Significantly, the dry-encapsulated CNTTFT exhibits very low or even negligible hysteresis with good repeatability and air stability, which is greatly superior to the nonencapsulated and wet-encapsulated CNTTFT with spin-coated PMMA. The dry-laminating encapsulation strategy, a kind of technological innovation, resolves a significant problem of CNTTFT and therefore will be promising in facile transferring and packaging the CNT films for high-performance optoelectronic devices.
Collapse
Affiliation(s)
- Yi Yang
- Advanced Nano-materials Division, Key Laboratory of Nano-Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , Suzhou 215123, China
- University of Chinese Academy of Sciences , Beijing 100049, China
| | - Zhongwu Wang
- Advanced Nano-materials Division, Key Laboratory of Nano-Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , Suzhou 215123, China
| | - Zeyang Xu
- Advanced Nano-materials Division, Key Laboratory of Nano-Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , Suzhou 215123, China
- Nano Science and Technology Institute, University of Science and Technology of China , Suzhou 215123, China
| | - Kunjie Wu
- Advanced Nano-materials Division, Key Laboratory of Nano-Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , Suzhou 215123, China
| | - Xiaoqin Yu
- Advanced Nano-materials Division, Key Laboratory of Nano-Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , Suzhou 215123, China
| | - Xiaosong Chen
- Advanced Nano-materials Division, Key Laboratory of Nano-Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , Suzhou 215123, China
| | - Yancheng Meng
- Advanced Nano-materials Division, Key Laboratory of Nano-Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , Suzhou 215123, China
- Nano Science and Technology Institute, University of Science and Technology of China , Suzhou 215123, China
| | - Hongwei Li
- Advanced Nano-materials Division, Key Laboratory of Nano-Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , Suzhou 215123, China
| | - Song Qiu
- Advanced Nano-materials Division, Key Laboratory of Nano-Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , Suzhou 215123, China
| | - Hehua Jin
- Advanced Nano-materials Division, Key Laboratory of Nano-Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , Suzhou 215123, China
| | - Liqiang Li
- Advanced Nano-materials Division, Key Laboratory of Nano-Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , Suzhou 215123, China
| | - Qingwen Li
- Advanced Nano-materials Division, Key Laboratory of Nano-Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , Suzhou 215123, China
| |
Collapse
|
40
|
Yang Y, Ding L, Han J, Zhang Z, Peng LM. High-Performance Complementary Transistors and Medium-Scale Integrated Circuits Based on Carbon Nanotube Thin Films. ACS NANO 2017; 11:4124-4132. [PMID: 28333433 DOI: 10.1021/acsnano.7b00861] [Citation(s) in RCA: 20] [Impact Index Per Article: 2.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
Solution-derived carbon nanotube (CNT) network films with high semiconducting purity are suitable materials for the wafer-scale fabrication of field-effect transistors (FETs) and integrated circuits (ICs). However, it is challenging to realize high-performance complementary metal-oxide semiconductor (CMOS) FETs with high yield and stability on such CNT network films, and this difficulty hinders the development of CNT-film-based ICs. In this work, we developed a doping-free process for the fabrication of CMOS FETs based on solution-processed CNT network films, in which the polarity of the FETs was controlled using Sc or Pd as the source/drain contacts to selectively inject carriers into the channels. The fabricated top-gated CMOS FETs showed high symmetry between the characteristics of n- and p-type devices and exhibited high-performance uniformity and excellent scalability down to a gate length of 1 μm. Many common types of CMOS ICs, including typical logic gates, sequential circuits, and arithmetic units, were constructed based on CNT films, and the fabricated ICs exhibited rail-to-rail outputs because of the high noise margin of CMOS circuits. In particular, 4-bit full adders consisting of 132 CMOS FETs were realized with 100% yield, thereby demonstrating that this CMOS technology shows the potential to advance the development of medium-scale CNT-network-film-based ICs.
Collapse
Affiliation(s)
- Yingjun Yang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University , Beijing 100871, China
| | - Li Ding
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University , Beijing 100871, China
| | - Jie Han
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University , Beijing 100871, China
| | - Zhiyong Zhang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University , Beijing 100871, China
| | - Lian-Mao Peng
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University , Beijing 100871, China
| |
Collapse
|
41
|
McMorrow JJ, Cress CD, Gaviria Rojas WA, Geier ML, Marks TJ, Hersam MC. Radiation-Hard Complementary Integrated Circuits Based on Semiconducting Single-Walled Carbon Nanotubes. ACS NANO 2017; 11:2992-3000. [PMID: 28212000 DOI: 10.1021/acsnano.6b08561] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Increasingly complex demonstrations of integrated circuit elements based on semiconducting single-walled carbon nanotubes (SWCNTs) mark the maturation of this technology for use in next-generation electronics. In particular, organic materials have recently been leveraged as dopant and encapsulation layers to enable stable SWCNT-based rail-to-rail, low-power complementary metal-oxide-semiconductor (CMOS) logic circuits. To explore the limits of this technology in extreme environments, here we study total ionizing dose (TID) effects in enhancement-mode SWCNT-CMOS inverters that employ organic doping and encapsulation layers. Details of the evolution of the device transport properties are revealed by in situ and in operando measurements, identifying n-type transistors as the more TID-sensitive component of the CMOS system with over an order of magnitude larger degradation of the static power dissipation. To further improve device stability, radiation-hardening approaches are explored, resulting in the observation that SWNCT-CMOS circuits are TID-hard under dynamic bias operation. Overall, this work reveals conditions under which SWCNTs can be employed for radiation-hard integrated circuits, thus presenting significant potential for next-generation satellite and space applications.
Collapse
Affiliation(s)
| | - Cory D Cress
- U.S. Naval Research Laboratory , Washington, D.C. 20375, United States
| | | | | | | | | |
Collapse
|
42
|
Liang X, Xia J, Dong G, Tian B, Peng L. Carbon Nanotube Thin Film Transistors for Flat Panel Display Application. Top Curr Chem (Cham) 2016; 374:80. [PMID: 27873286 DOI: 10.1007/s41061-016-0083-6] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/22/2016] [Accepted: 11/05/2016] [Indexed: 01/05/2023]
Abstract
Carbon nanotubes (CNTs) are promising materials for both high performance transistors for high speed computing and thin film transistors for macroelectronics, which can provide more functions at low cost. Among macroelectronics applications, carbon nanotube thin film transistors (CNT-TFT) are expected to be used soon for backplanes in flat panel displays (FPDs) due to their superior performance. In this paper, we review the challenges of CNT-TFT technology for FPD applications. The device performance of state-of-the-art CNT-TFTs are compared with the requirements of TFTs for FPDs. Compatibility of the fabrication processes of CNT-TFTs and current TFT technologies are critically examined. Though CNT-TFT technology is not yet ready for backplane production line of FPDs, the challenges can be overcome by close collaboration between research institutes and FPD manufacturers in the short term.
Collapse
Affiliation(s)
- Xuelei Liang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing, 100871, China.
| | - Jiye Xia
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing, 100871, China
| | - Guodong Dong
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing, 100871, China
| | - Boyuan Tian
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing, 100871, China
| | - Lianmao Peng
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing, 100871, China.
| |
Collapse
|