Thick-Shell CuInS2/ZnS Quantum Dots with Suppressed "Blinking" and Narrow Single-Particle Emission Line Widths

Ultranarrow Deep-Blue Luminescence of Perovskite Nanocrystals by A-Site Cation Control

Metal-halide perovskite nanocrystals (NCs) are one of the most promising emitters for the application of display and nanolight sources. The full width at half-maximum (FWHM) of photoluminescence (PL) emission is essential for color purity, which however remains a difficulty to further reduce the FWHM of the perovskite NCs at room temperature. Here, we show the quasi-sphere perovskite NCs with narrow PL emission at a deep-blue wavelength of ∼430 nm; its PL FWHM reaches ∼11 nm at room temperature, owing to the monodispersion in size distribution as well as the symmetric quasi-sphere morphology of NCs releasing the fine structure splitting-induced inhomogeneous broadening. Through regulating A cations with respect to the ratio of FA (or MA)-to-Cs and Cs-to-Pb, the PL emission of the NCs could be tuned from ∼505 to ∼430 nm combined with varied morphologies from large cube to small quasi-sphere. Such spectroscopic and morphological discrepancies are supposed to be attributed to the different crystalline kinetics that is strongly dependent on the synthetic condition. To be specific, in the case of increasing FA (or MA)-to-Cs, the growth rate of CsPbBr3 and FAPbBr3 (or MAPbBr3) perovskites is determined by the reactivity of transient species, while in the case of decreasing the Cs-to-Pb ratio, the growth rate of perovskites is slowed down by the serious reduction of Cs+ in the precursor. This study provides an effective strategy to adjust the emission across from green to deep-blue color and promotes the perovskite NCs with a narrow FWHM, and tunable PL emission facilitates in application of optoelectronic devices.

Inkjet printing of heavy-metal-free quantum dots-based devices: a review

Inkjet printing (IJP) has become a versatile, cost-effective technology for fabricating organic and hybrid electronic devices. Heavy-metal-based quantum dots (HM QDs) play a significant role in these inkjet-printed devices due to their excellent optoelectrical properties. Despite their utility, the intrinsic toxicity of HM QDs limits their applications in commercial products. To address this limitation, developing alternative HM-free quantum dots (HMF QDs) that have equivalent optoelectronic properties to HM QD is a promising approach to reduce toxicity and environmental impact. This article comprehensively reviews HMF QD-based devices fabricated using IJP methods. The discussion includes the basics of IJP technology, the formulation of printable HMF QD inks, and solutions to the coffee ring effect. Additionally, this review briefly explores the performance of typical state-of-the-art HMF QDs and cutting-edge characterization techniques for QD inks and printed QD films. The performance of printed devices based on HMF QDs is discussed and compared with those fabricated by other techniques. In the conclusion, the persisting challenges are identified, and perspectives on potential avenues for further progress in this rapidly developing research field are provided.

Rigid CuInS2/ZnS Core/Shell Quantum Dots for High Performance Infrared Light-Emitting Diodes

CuInS2 (CIS) quantum dots (QDs) represent an important class of colloidal materials with broad application potential, owing to their low toxicity and unique optical properties. Although coating with a ZnS shell has been identified as a crucial method to enhance optical performance, the occurrence of cation exchange has historically resulted in the unintended formation of Cu-In-Zn-S alloyed QDs, causing detrimental blueshifts in both absorption and photoluminescence (PL) spectral profiles. In this study, we present a facile one-pot synthetic strategy aimed at impeding the cation exchange process and promoting ZnS shell growth on CIS core QDs. The suppression of both electron-phonon interaction and Auger recombination by the rigid ZnS shell results in CIS/ZnS core/shell QDs that exhibit a wide near-infrared (NIR) emission coverage and a remarkable PL quantum yield of 92.1%. This effect boosts the fabrication of high-performance, QD-based NIR light-emitting diodes with the best stability of such materials so far.

Recent advances in photoelectrochemical hydrogen production using I-III-VI quantum dots

Photoelectrochemical (PEC) water splitting, recognized for its potential in producing solar hydrogen through clean and sustainable methods, has gained considerable interest, particularly with the utilization of semiconductor nanocrystal quantum dots (QDs). This minireview focuses on recent advances in PEC hydrogen production using I-III-VI semiconductor QDs. The outstanding optical and electrical properties of I-III-VI QDs, which can be readily tuned by modifying their size, composition, and shape, along with an inherent non-toxic nature, make them highly promising for PEC applications. The performance of PEC devices using these QDs can be enhanced by various strategies, including ligand modification, defect engineering, doping, alloying, and core/shell heterostructure engineering. These approaches have notably improved the photocurrent densities for hydrogen production, achieving levels comparable to those of conventional heavy-metal-based counterparts. Finally, this review concludes by addressing the present challenges and future prospects of these QDs, underlining crucial steps for their practical applications in solar hydrogen production.

Seed-mediated growth synthesis and tunable narrow-band luminescence of quaternary Ag-In-Ga-S alloyed nanocrystals

Silver-based I-III-VI-type semiconductor nanocrystals have received extensive attention due to their narrow-band luminescence properties. Herein, we demonstrated a seed-mediated growth of quaternary Ag-In-Ga-S (AIGS) nanocrystals (NCs) with narrow-band luminescence. By conducting partial cation exchange with In3+ and Ga3+ based on Ag2S NCs and controlling the Ag/In feeding ratios (0.25 to 2) of Ag-In-S seeds as well as the inventory of 1-dodecanethiol, we achieved optimized luminescence performance in the synthesized AIGS NCs, characterized by a narrow full width at half maximum of less than 40 nm. Meanwhile, narrow-band luminescent AIGS NCs exhibit a tetragonal AgGaS2 crystal structure and a gradient alloy structure, rather than a core-shell structure. Most importantly, the kinetics decay curves of time-resolved photoluminescence and the ground state bleaching in transient absorption generally agree with each other regarding the lifetime of the second decay component, which indicates that the narrow-band luminescence is due to the slow radiative recombination between trapped electrons and trapped holes located at the edge of the conduction band and the deep silver-related trap states (e.g., silver vacancy), respectively. This study provides new insights into the correlation between the narrow-band luminescence properties and the structural characteristics of AIGS NCs.

Enhancement mechanism of quantum yield in core/shell/shell quantum dots of ZnS-AgIn5S8/ZnIn2S4/ZnS

To achieve a high quantum yield (QY) of nanomaterials suitable for optical applications, we improved the optical properties of AgIn5S8 (AIS) quantum dots (QDs) by employing an alloyed-core/inner-shell/outer-shell (ZAIS/ZIS/ZnS) structure. We also investigated the mechanism of optical transitions to clarify the improvement of QYs. In AIS, the low-energy absorption near the band edge region is attributed to the weakly allowed band gap transition, which gains oscillator strength through state intermixing and electron-phonon coupling. The main photoluminescence is also ascribed to the weakly allowed band gap transition with characteristics of self-trapped excitonic emission. With alloying/shelling processes, the weakly allowed transition is enhanced by the evolution of the electronic structures in the alloyed core, which improves the band gap emission. In shelled structures, the nonradiative process is reduced by the reconstructed lattice and passivated surface, ultimately leading to a high QY of 85% in ZAIS/ZIS/ZnS. These findings provide new insights into the optical transitions of AIS because they challenge previous conclusions. In addition, our work elucidates the mechanism behind the enhancement of QY accomplished through alloying/shelling processes, providing strategies to optimize nontoxic QDs for various applications using a green chemistry approach.

AgInS2-Embedded Photocatalytic Membrane: Insights into the Excited State and Electron Transfer Dynamics

Photocatalytic reactions at semiconductor nanocrystal surfaces are useful for synthesizing value-added chemicals using sunlight. Semiconductor nanocrystals dispersed in a rigid framework, such as polymer film, can mitigate issues such as aggregation, product separation, and other challenges that are usually encountered in suspensions or slurries. Using a cation exchange technique, we successfully embedded AgInS2 nanoparticles into a Nafion matrix, termed AgInS2-Nafion. This was achieved through a galvanic exchange between In and Ag in In2S3 present within the Nafion film, enabling an adjustable Ag:In ratio for optimized photophysical properties. As in the case of colloidal suspension, the AgInS2 particles embedded in Nafion exhibit a long absorption tail, a broad emission band with a large Stokes shift, and emission lifetimes extending into the microseconds that are characteristic of donor-acceptor pairs, DAP. Remediation of surface states with the treatment of 3-mercaptopropionic acid resulted in significant enhancement in the emission yield. Charge carrier generation through bandgap excitation as well as activation of DAP states which reside within the bandgap is probed through transient absorption spectroscopy. The photocatalytic activity of AgInS2-Nafion was probed by using thionine as an electron acceptor. The electron transfer rate constant from excited AgInS2 to thionine as observed from transient absorption spectroscopy was determined to be ∼6.3 × 1010 s-1. The design of a photoactive membrane offers new ways to carry out photocatalytic processes with greater selectivity.

Enhanced Stability and Highly Bright Electroluminescence of AgInZnS/CdS/ZnS Quantum Dots through Complete Isolation of Core and Shell via a CdS Interlayer

An approach for synthesizing AgInZnS/CdS/ZnS core-shell-shell quantum dots (QDs) that demonstrate exceptional stability and electroluminescence (EL) performance is introduced. This approach involves incorporating a cadmium sulfide (CdS) interlayer between an AgInZnS (AIZS) core and a zinc sulfide (ZnS) shell to prevent the diffusion of Zn ions into the AIZS core and the cation exchange at the core-shell interface. Consequently, a uniform and thick ZnS shell, with a thickness of 2.9 nm, is formed, which significantly enhances the stability and increases the photoluminescence quantum yield (87.5%) of the QDs. The potential for AIZS/CdS/ZnS QDs in electroluminescent devices is evaluated, and an external quantum efficiency of 9.6% in the 645 nm is achieved. These findings highlight the importance of uniform and thick ZnS shells in improving the stability and EL performance of QDs.

Chiroptically Active Multi-Modal Calcium Carbonate-Based Nanocomposites

The development of multimodal nano- and micro-structures has become an increasingly popular area of research in recent years. In particular, the combination of two or more desirable properties within a single structure opens multiple opportunities from biomedicine, sensing, and catalysis, to a variety of optical applications. Here, for the first time, we report the synthesis and characterization of multimodal chiroptically active CaCO3 nanocomposites. These composites have been prepared by a modified microemulsion method in the presence of an amino acid (cysteine). Following this, additional modalities have been introduced by loading the composites with luminescent nanoparticles or doping with Eu3+ ions. The luminescent composites have been produced by the incorporation of CuInZnS/ZnS or CdSe@ZnS/ZnS core/shell quantum dots, or via doping with trivalent europium. In this manner, we have produced chiroptically active composites with orange, green, and red luminescence. Overall, this work demonstrates the unique advantage and potential of our approach and new class of chiroptically active CaCO3 nanocomposites, which display tunable functionality to specific requirements via the incorporation of desired ions, nanoparticles, and chirality of the structure.

Highly efficient and stable tandem luminescent solar concentrators based on carbon dots and CuInSe2-xSx/ZnS quantum dots

Semi-transparent large-area luminescent solar concentrators (LSCs) have been considered an essential part of zero-energy or low-energy consuming buildings in the future. Inorganic colloidal quantum dots (QDs) are promising candidates for LSCs due to the advantages of a tunable bandgap, engineered large Stokes shift, and relatively high photoluminescence (PL) quantum yield. However, LSCs that are fabricated using colloidal quantum dots exhibited an inferior stability under long-term illumination, demanding great efforts to explore the highly stable LSCs. Herein, we fabricated large-area (∼100 cm2) tandem LSCs based on highly stable carbon dots (CDs) and highly luminescent near-infrared emitting CuInSe2-xSx/ZnS (CuInSeS/ZnS) QDs. Coupled with a Si diode as a reference, the power conversion efficiency of the corresponding tandem (dimensions: 10 × 10 × 0.5 cm3) and single LSCs (dimensions: 10 × 10 × 0.3 cm3) based on CuInSeS/ZnS QDs under one sun illumination are 0.46% and 0.5%, respectively. For single CuInSeS/ZnS QD based LSCs at a low concentration (0.039 wt%), external and internal quantum efficiencies reach up to 2.87% and 36.37%, respectively. After UV illumination for 8 h, bottom LSCs based on CuInSeS/ZnS QDs retain 93.22% of the initial PL emission, which is higher than that of LSCs (∼80%) without the CD protection. The highly efficient and stable tandem LSCs employing green CDs and NIR CuInSeS/ZnS QDs as PL emitters pave the way for the realization of large area building-integrated photovoltaic (BIPV) devices.

Synthesis and hybridization of CuInS2 nanocrystals for emerging applications

Copper indium sulfide (CuInS2) is a ternary A(I)B(III)X(VI)2-type semiconductor featuring a direct bandgap with a high absorption coefficient. In attempts to explore their practical applications, nanoscale CuInS2 has been synthesized with crystal sizes down to the quantum confinement regime. The merits of CuInS2 nanocrystals (NCs) include wide emission tunability, a large Stokes shift, long decay time, and eco-friendliness, making them promising candidates in photoelectronics and photovoltaics. Over the past two decades, advances in wet-chemistry synthesis have achieved rational control over cation-anion reactivity during the preparation of colloidal CuInS2 NCs and post-synthesis cation exchange. The precise nano-synthesis coupled with a series of hybridization strategies has given birth to a library of CuInS2 NCs with highly customizable photophysical properties. This review article focuses on the recent development of CuInS2 NCs enabled by advanced synthetic and hybridization techniques. We show that the state-of-the-art CuInS2 NCs play significant roles in optoelectronic and biomedical applications.

The impact of spatially heterogeneous chemical doping on the electronic properties of CdSe quantum dots: insights from ab initio computation

The introduction of copper (Cu) impurity in semiconductor CdSe quantum dots (QDs) gives rise to unique photoluminescence (PL) bands exhibiting distinctive characteristics, like broad line width, significant Stokes shift, and complex temporal decay. The atomistic origins of these spectral features are yet to be understood comprehensively. We employed multiple computational techniques to systematically study the impact of the spatial heterogeneity of Cu atoms on the stability and photophysical properties, including the emission linewidth of doped QDs under ambient conditions. The Cu substitution introduces a spin-polarized intragap state, the energetic position of which is strongly dependent on the dopant location and causes spectral broadening in QD ensembles. Furthermore, the dopant dynamics under ambient conditions are significantly influenced by the specific arrangement of Cu within the QDs. The dynamic electronic structures of surface-doped CdSe illustrate more pronounced perturbations and vary the mid-gap state position more drastically than those of the core-doped QDs. Vibronic coupling broadens the photoluminescence peaks associated with the conduction band-to-defect level transition for individual QDs. These insights into the dynamic structure-photophysical property relationship suggest viable approaches, such as tuning the operational temperature and selective co-doping, to enhance the functional performances of doped CdSe QDs strategically.

Temperature- and Size-Dependent Photoluminescence of CuInS2 Quantum Dots

We present the results of a temperature-dependent photoluminescence (PL) spectroscopy study on CuInS2 quantum dots (QDs). In order to elucidate the influence of QD size on PL temperature dependence, size-selective precipitation was used to obtain several nanoparticle fractions. Additionally, the nanoparticles' morphology and chemical composition were studied using transmission electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. The obtained QDs showed luminescence in the visible-near infrared range. The PL energy, linewidth, and intensity were studied within an 11-300 K interval. For all fractions, a temperature decrease led to a shift in the emission maximum to higher energies and pronounced growth of the PL intensity down to 75-100 K. It was found that for large particle fractions, the PL intensity started to decrease, with temperature decreasing below 75 K, while the PL intensity of small nanoparticles remained stable.

Selected I-III-VI2 Semiconductors: Synthesis, Properties and Applications in Photovoltaic Cells

I-III-VI2 group quantum dots (QDs) have attracted high attention in photoelectronic conversion applications, especially for QD-sensitized solar cells (QDSSCs). This group of QDs has become the mainstream light-harvesting material in QDSSCs due to the ability to tune their electronic properties through size, shape, and composition and the ability to assemble the nanocrystals on the surface of TiO2. Moreover, these nanocrystals can be produced relatively easily via cost-effective solution-based synthetic methods and are composed of low-toxicity elements, which favors their integration into the market. This review describes the methods developed to prepare I-III-VI2 QDs (AgInS2 and CuInS2 were excluded) and control their optoelectronic properties to favor their integration into QDSSCs. Strategies developed to broaden the optoelectronic response and decrease the surface-defect states of QDs in order to promote the fast electron injection from QDs into TiO2 and achieve highly efficient QDSSCs will be described. Results show that heterostructures obtained after the sensitization of TiO2 with I-III-VI2 QDs could outperform those of other QDSSCs. The highest power-conversion efficiency (15.2%) was obtained for quinary Cu-In-Zn-Se-S QDs, along with a short-circuit density (JSC) of 26.30 mA·cm-2, an open-circuit voltage (VOC) of 802 mV and a fill factor (FF) of 71%.

A Review on Multiple I-III-VI Quantum Dots: Preparation and Enhanced Luminescence Properties

I-III-VI type QDs have unique optoelectronic properties such as low toxicity, tunable bandgaps, large Stokes shifts and a long photoluminescence lifetime, and their emission range can be continuously tuned in the visible to near-infrared light region by changing their chemical composition. Moreover, they can avoid the use of heavy metal elements such as Cd, Hg and Pb and highly toxic anions, i.e., Se, Te, P and As. These advantages make them promising candidates to replace traditional binary QDs in applications such as light-emitting diodes, solar cells, photodetectors, bioimaging fields, etc. Compared with binary QDs, multiple QDs contain many different types of metal ions. Therefore, the problem of different reaction rates between the metal ions arises, causing more defects inside the crystal and poor fluorescence properties of QDs, which can be effectively improved by doping metal ions (Zn²⁺, Mn²⁺ and Cu⁺) or surface coating. In this review, the luminous mechanism of I-III-VI type QDs based on their structure and composition is introduced. Meanwhile, we focus on the various synthesis methods and improvement strategies like metal ion doping and surface coating from recent years. The primary applications in the field of optoelectronics are also summarized. Finally, a perspective on the challenges and future perspectives of I-III-VI type QDs is proposed as well.

Coherent heteroepitaxial growth of I-III-VI2 Ag(In,Ga)S2 colloidal nanocrystals with near-unity quantum yield for use in luminescent solar concentrators

Colloidal Ag(In,Ga)S₂ nanocrystals (AIGS NCs) with the band gap tunability by their size and composition within visible range have garnered surging interest. High absorption cross-section and narrow emission linewidth of AIGS NCs make them ideally suited to address the challenges of Cd-free NCs in wide-ranging photonic applications. However, AIGS NCs have shown relatively underwhelming photoluminescence quantum yield (PL QY) to date, primarily because coherent heteroepitaxy has not been realized. Here, we report the heteroepitaxy for AIGS-AgGaS₂ (AIGS-AGS) core-shell NCs bearing near-unity PL QYs in almost full visible range (460 to 620 nm) and enhanced photochemical stability. Key to the successful growth of AIGS-AGS NCs is the use of the Ag-S-Ga(OA)₂ complex, which complements the reactivities among cations for both homogeneous AIGS cores in various compositions and uniform AGS shell growth. The heteroepitaxy between AIGS and AGS results in the Type I heterojunction that effectively confines charge carriers within the emissive core without optically active interfacial defects. AIGS-AGS NCs show higher extinction coefficient and narrower spectral linewidth compared to state-of-the-art heavy metal-free NCs, prompting their immediate use in practicable applications including displays and luminescent solar concentrators (LSCs).

Dye-induced photoluminescence quenching of quantum dots: role of excited state lifetime and confinement of charge carriers

We investigate the role of quantum confinement and photoluminescence (PL) lifetime of photoexcited charge carriers in semiconductor core/shell quantum dots (QDs) via PL quenching due to surface modification. Surface modification is controlled by varying the number of dye molecules adsorbed onto the QD shell surface forming QD-dye nanoassemblies. We selected CuInS₂/ZnS (CIS) and InP/ZnS (InP) core/shell QDs exhibiting relatively weak (664 meV) and strong (1194 meV) confinement potentials for the conduction band electron. Moreover, the difference in the emission mechanism gives rise to a long and short excited state lifetime of CIS (ca. 290 ns) and InP (ca. 37 ns) QDs. Dye molecules of different ionic characters (rhodamine 575: zwitterionic and rhodamine 560: cationic) are used as quenchers. A detailed analysis of Stern-Volmer data shows that (i) quenching is generally more pronounced in CIS-dye assemblies as compared to InP-dye assemblies, (ii) dynamic quenching is dominating in all QD-dye assemblies with only a minor contribution from static quenching and (iii) the cationic dye shows a stronger interaction with the QD shell surface than the zwitterionic dye. Observations (i) and (ii) can be explained by the differences in the amplitude of the electronic component of the exciton wavefunction near the dye binding sites in both QDs, which results in the breaking up of the electron-hole pair and favors charge trapping. Observation (iii) can be attributed to the variations in electrostatic interactions between the negatively charged QD shell surface and the cationic and zwitterionic dyes, with the former exhibiting a stronger interaction. Moreover, the long lifetime of CIS QDs facilitates us to easily probe different time scales of the trapping processes and thus differentiate the origins of static and dynamic quenching components that appear in the Stern-Volmer analysis.

Single-Particle Dynamics of ZnS Shelling Induced Replenishment of Carrier Diffusion for Individual Emission Centers in CuInS2 Quantum Dots

Insights into blinking and photoactivation of aqueous copper indium sulfide (CIS) quantum dots have been obtained using fluorescence correlation spectroscopy (FCS) and fluorescence lifetime correlation spectroscopy (FLCS). An unusual excitation wavelength-dependence of photoactivation/photocorrosion is manifested in an increase in the initial correlation amplitude G(0) for λ_ex = 532 nm, but a decrease for λ_ex = 405 nm. This has been rationalized in terms of different contributions from surface-assisted recombination in the two cases. Blinking times obtained from the autocorrelation functions (ACFs) of the 100-200 ns lifetime component (core Cu-mediated recombination) are almost unaffected by shelling, but those from the ACF for the 10-30 ns lifetime (surface states) increase significantly. Absence of cross-correlation between the two recombinative states of bare CIS QDs and the emergence of an anticorrelation with the introduction of the ZnS shell are observed, indicating the diffusive nature of the two states for CIS-ZnS. The diffusion is inhibited in bare CIS QDs due to the preponderance of surface states.

Direct Observation of Off-Stoichiometry-Induced Phase Transformation of 2D CdSe Quantum Nanosheets

Crystal structures determine material properties, suggesting that crystal phase transformations have the potential for application in a variety of systems and devices. Phase transitions are more likely to occur in smaller crystals; however, in quantum-sized semiconductor nanocrystals, the microscopic mechanisms by which phase transitions occur are not well understood. Herein, the phase transformation of 2D CdSe quantum nanosheets caused by off-stoichiometry is revealed, and the progress of the transformation is directly observed by in situ transmission electron microscopy. The initial hexagonal wurtzite-CdSe nanosheets with atomically uniform thickness are transformed into cubic zinc blende-CdSe nanosheets. A combined experimental and theoretical study reveals that electron-beam irradiation can change the stoichiometry of the nanosheets, thereby triggering phase transformation. The loss of Se atoms induces the reconstruction of surface atoms, driving the transformation from wurtzite-CdSe(11 2 ¯ $\bar{2}$ 0) to zinc blende-CdSe(001) 2D nanocrystals. Furthermore, during the phase transformation, unconventional dynamic phenomena occur, including domain separation. This study contributes to the fundamental understanding of the phase transformations in 2D quantum-sized semiconductor nanocrystals.

Fabrication of CuInZnS/ZnS Quantum Dot Microbeads by a Two-Step Approach of Emulsification-Solvent Evaporation and Surfactant Substitution and Its Application for Quantitative Detection

CuInS2 quantum dots (CIS QDs) are considered to be promising alternatives for Cd-based QDs in the fields of biology and medicine. However, high-quality hydrophobic CIS QDs are difficult to be transferred to water due to their 1-dodecylmercaptan (DDT) ligands. Therefore, the fluorescence and stability of the prepared aqueous CIS QDs is not enough to meet the requirement for sensitive detection. Here, as large as 13 nm CuInZnS/ZnS QDs with DDT ligands were first synthesized, and then, CuInZnS/ZnS microbeads (QBs) containing thousands of QDs were successfully fabricated by a two-step approach of emulsion-solvent evaporation and surfactant substitution. Through emulsion-solvent evaporation, the CuInZnS/ZnS QDs formed microbeads in the microemulsion with dodecyl trimethylammonium bromide (DTAB), and the Förster resonance energy transfer (FRET) has been effectively overcome. Then, CO-520 was introduced to substitute DTAB to improve the stability and water solubility. Lastly, the microbeads were coated with a SiO2 shell and carboxylated. Subsequently, the constructed QBs (∼210 nm) were used as labels in a fluorescence immunosorbent assay (FLISA) for quantitative detection of heart type fatty acid binding protein (H-FABP), and the limit of detection was 0.48 ng mL-1, which indicated a greatly improved detection sensitivity compared to that of the Cd-free QDs. The highly fluorescent and stable CuInZnS/ZnS QBs will have great application prospects in many biological fields.

Beneficial Intrinsic Hole Trapping and Its Amplitude Variation in a Highly Photoluminescent Toxic-Metal-Free Quantum Dot

Intrinsic hole trapping as well as hole detrapping have not been observed for any quantum dot (QD) or perovskite nanocrystal (PNC) system. Moreover, amplitude variation of intrinsic hole trapping (or detrapping) has not been reported at all for any QD or PNC system. However, for a CuInS₂-based core/alloy-shell (CAS) QD system, (a) both intrinsic hole trapping and detrapping have been observed and (b) very significant amplitude variations of hole trapping (∼16 to ∼42%) and hole detrapping (∼44 to 23%) have been observed. Unlike detrimental electron trapping, hole trapping has been shown to be beneficial, having a direct correlation toward increasing PLQY to 96%. Simultaneous electron and hole trapping has been shown to be quite beneficial for the CuInS₂-based CAS QD system leading to the longest ON time (∼130 s) for which a nontoxic metal-based QD remains only in the ON-state without blinking.

Narrow-Bandwidth Blue-Emitting Ag-Ga-Zn-S Semiconductor Nanocrystals for Quantum-Dot Light-Emitting Diodes

I-III-VI type semiconductor nanocrystals (NCs) have attracted considerable attention in the display field. Herein, we realized the synthesis of narrow-bandwidth blue-emitting Ag-Ga-Zn-S (AGZS) NCs via a facile one-pot method. Intriguingly, the Ag/Zn feeding ratio and Ag/Ga feeding ratio are crucial for the realization of narrow-bandwidth AGZS NCs. By choosing a Ag/Zn feeding ratio of 4:1 and Ag/Ga feeding ratio of 1:8, AGZS NCs demonstrate a typical blue emission at 470 nm with a narrow full width at half-maximum (fwhm) of 48 nm, which is mainly generated from the band-to-hole recombination rather than the donor-acceptor pair (DAP) recombination. Furthermore, a solution-processed quantum-dot light-emitting device based on AGZS NCs exhibits a narrow electroluminescent bandwidth of 53 nm and high luminance over 123.1 cd m^-2, as well as a high external quantum efficiency (EQE) of 0.40%. Our work highlights AGZS NCs with high color purity as an important candidate for blue-light-emitting devices.

Impact of Morphological Inhomogeneity on Excitonic States in Highly Mismatched Alloy ZnSe1-XTeX Nanocrystals

ZnSe_1-XTe_X nanocrystals (NCs) are promising photon emitters with tunable emission across the violet to orange range and near-unity quantum yields. However, these NCs suffer from broad emission line widths and multiple exciton decay dynamics, which discourage their practicable use. Here, we explore the excitonic states in ZnSe_1-XTe_X NCs and their photophysical characteristics in relation to the morphological inhomogeneity of highly mismatched alloys. Ensemble and single-dot spectroscopic analysis of a series of ZnSe_1-XTe_X NC samples with varying Te ratios coupled with computational calculations shows that, due to the distinct electronegativity between Se and Te, nearest-neighbor Te pairs in ZnSe_1-XTe_X alloys create localized hole states spectrally distributed approximately 130 meV above the 1S_h level of homogeneous ZnSe_1-XTe_X NCs. This forms spatially separated excitons (delocalized electron and localized hole in trap), accounting for both inhomogeneous and homogeneous line width broadening with delayed recombination dynamics. Our results identify photophysical characteristics of excitonic states in NCs made of highly mismatched alloys and provide future research directions with potential implications for photonic applications.

Optically Detected Magnetic Resonance Spectroscopy of Cu-Doped CdSe/CdS and CuInS2 Colloidal Quantum Dots

Copper-doped II-VI and copper-based I-III-VI₂ colloidal quantum dots (CQDs) have been at the forefront of interest in nanocrystals over the past decade, attributable to their optically activated copper states. However, the related recombination mechanisms are still unclear. The current work elaborates on recombination processes in such materials by following the spin properties of copper-doped CdSe/CdS (Cu@CdSe/CdS) and of CuInS₂ and CuInS₂/(CdS, ZnS) core/shell CQDs using continuous-wave and time-resolved optically detected magnetic resonance (ODMR) spectroscopy. The Cu@CdSe/CdS ODMR showed two distinct resonances with different g factors and spin relaxation times. The best fit by a spin Hamiltonian simulation suggests that emission comes from recombination of a delocalized electron at the conduction band edge with a hole trapped in a Cu²⁺ site with a weak exchange coupling between the two spins. The ODMR spectra of CuInS₂ CQDs (with and without shells) differ significantly from those of the copper-doped II-VI CQDs. They are comprised of a primary resonance accompanied by another resonance at half-field, with a strong correlation between the two, indicating the involvement of a triplet exciton and hence stronger electron-hole exchange coupling than in the doped core/shell CQDs. The spin Hamiltonian simulation shows that the hole is again associated with a photogenerated Cu²⁺ site. The electron resides near this Cu²⁺ site, and its ODMR spectrum shows contributions from superhyperfine coupling to neighboring indium atoms. These observations are consistent with the occurrence of a self-trapped exciton associated with the copper site. The results presented here support models under debate for over a decade and help define the magneto-optical properties of these important materials.

Highly efficient near-infrared light-emitting diodes based on Zn:CuInSe2/ZnS//ZnS quantum dots with double shell engineering

Near-infrared (NIR) quantum dot-based light-emitting diodes (QLEDs) developed rapidly in the fields of biomedical applications, telecommunications, sensing and diagnostics. However, it remains an enormous challenge for the synthesis of high-quality NIR QD materials with low toxicity or non-toxicity, high photoluminescence (PL) quantum yields (QYs) and high stability. Herein, we used a facile method to synthesize large-sized (8 nm) and thick-shell NIR Zn:CuInSe₂/ZnS//ZnS QDs by engineering a double ZnS shell. The resulting NIR QDs exhibited high PL QYs of 80%, and excellent photochemical stability, which could be ascribed to the decreased lattice mismatch of the core/shell interface by the introduced Zn element into CuInSe₂ cores and the energetic defect passivation of the double ZnS shell engineering. Furthermore, the high-quality Zn:CuInSe₂/ZnS//ZnS QDs based LEDs exhibited the maximum external quantum efficiency (EQE) of 3.0%, 4.0% and 2.5% for PL peaks located at 705, 719 and 728 nm, respectively. This efficiency is comparable to that of the outstanding PbS- and InAs-based NIR QLEDs, as well as the avoidance of toxic heavymetal and/or hazardous reagents in this work. The synthesized high-quality Zn:CuInSe₂/ZnS//ZnS QDs could be expected to promote the potential applications of heavy-metal-free QDs in the NIR fields.

Bright, Magnetic NIR-II Quantum Dot Probe for Sensitive Dual-Modality Imaging and Intensive Combination Therapy of Cancer

Improving the effectiveness of cancer therapy will require tools that enable more specific cancer targeting and improved tumor visualization. Theranostics have the potential for improving cancer care because of their ability to serve as both diagnostics and therapeutics; however, their diagnostic potential is often limited by tissue-associated light absorption and scattering. Herein, we develop CuInSe₂@ZnS:Mn quantum dots (QDs) with intrinsic multifunctionality that both enable the accurate localization of small metastases and act as potent tumor ablation agents. By leveraging the growth kinetics of a ZnS shell on a biocompatible CuInSe₂ core, Mn doping, and folic acid functionalization, we produce biocompatible QDs with high near-infrared (NIR)-II fluorescence efficiency up to 31.2%, high contrast on magnetic resonance imaging (MRI), and preferential distribution in 4T1 breast cancer tumors. MRI-enabled contrast of these nanoprobes is sufficient to timely identify small metastases in the lungs, which is critically important for preventing cancer spreading and recurrence. Further, exciting tumor-resident QDs with NIR light produces both fluorescence for tumor visualization through radiative recombination pathways as well as heat and radicals through nonradiative recombination pathways that kill cancer cells and initiate an anticancer immune response, which eliminates tumor and prevents tumor regrowth in 80% of mice.

Engineered Environment-Friendly Colloidal Core/Shell Quantum Dots for High-Efficiency Solar-Driven Photoelectrochemical Hydrogen Evolution

"Green" colloidal quantum dots (QDs)-based photoelectrochemical (PEC) cells are promising solar energy conversion systems possessing environmental friendliness, cost-effectiveness, and highly efficient solar-to-hydrogen conversion. In this work, eco-friendly AgInSe (AISe)/ZnSe core/shell QDs with wurtzite (WZ) phase were synthesized for solar hydrogen production. It was demonstrated that appropriately engineering the ZnSe shell thickness resulted in effective surface defects passivation of the AISe core for suppressed charge recombination in the consequent core/shell AISe/ZnSe QDs. The fabricated environmentally friendly core/shell QDs-based PEC device exhibited improved photo-excited electrons extraction efficiency under optimized conditions and delivered a maximum photocurrent density as high as 7.5 mA cm^-2 and long-term durability under standard AM 1.5G illumination (100 mW cm^-2 ). These findings suggest that AISe/ZnSe core/shell QDs with tailored optoelectronic properties are potential light sensitizers for eco-friendly, cost-effective, and highly efficient solar energy conversion applications.

Ultrafast dynamics and ultrasensitive single particle spectroscopy of optically robust core/alloy shell semiconductor quantum dots

A "one-pot one-step" synthesis method of Core/Alloy Shell (CAS) quantum dots (QDs) offers the scope of large scale synthesis in a less time consuming, more economical, highly reproducible and high-throughput manner in comparison to "multi-pot multi-step" synthesis for Core/Shell (CS) QDs. Rapid initial nucleation, and smooth & uniform shell growth lead to the formation of a compositionally-gradient alloyed hetero-structure with very significantly reduced interfacial trap density in CAS QDs. Thus, interfacial strain gets reduced in a much smoother manner leading to enhanced confinement for the photo-generated charge carriers in CAS QDs. Convincing proof of alloy-shelling for a CAS QD has been provided from HRTEM images at the single particle level. The band gap could be tuned as a function of composition, temperature, reactivity difference of precursors, etc. and a high PLQY and improved photochemical stability could be achieved for a small sized CAS QD. From the ultrafast exciton dynamics in CdSe and InP CAS QDs, it has been shown that (a) the hot exciton thermalization/relaxation happens in <500 fs, (b) hot electron trapping dynamics occurs within a ∼1 ps time scale, (c) band edge exciton trapping occurs within a 10-25 ps timescale and (d) for CdSe CAS QDs the hot hole gets trapped in about 35 ps. From fast PL decay dynamics, it has been shown that the amplitude of the intermediate time constant can be correlated with the PLQY. A model has been provided to understand these ultrafast to fast exciton dynamical processes. At the ultrasensitive single particle level, unlike CS QDs, CdSe CAS QDs have been shown to exhibit (a) constancy of PL_max (i.e. no bluing) and (b) constancy of PL intensity (i.e. no bleaching) of the single CAS QDs for continuous irradiation for one hour under an air atmosphere. Thus, CAS QDs hold the promise of being a superior optical probe in comparison to CS QDs both at the ensemble and at the single particle level, leading to enhanced flexibility of the CAS QDs towards designing and developing next generation application devices.

Managing Photoinduced Electron Transfer in AgInS2-CdS Heterostructures

Ternary semiconductors such as AgInS2 with their interesting photocatalytic properties can serve as building blocks to design light harvesting assemblies. The intraband transitions created by the metal ions extend the absorption well beyond the bandgap transition. The interfacial electron transfer of AgInS2 with surface bound ethyl viologen under bandgap and sub band gap irradiation as probed by steady state photolysis and transient absorption spectroscopy offers new insights into the participation of conduction band and trapped electrons. Capping AgInS2 with CdS shifts emission maximum to the blue and increases the emission yield as the surface defects are remediated. CdS capping also promotes charge separation as evident from the efficiency of electron transfer to ethyl viologen, which increased from 14% to 29%. The transient absorption measurements which elucidate the kinetic aspects of electron transfer processes in AgInS2 and CdS capped AgInS2 are presented. The improved performance of CdS capped AgInS2 offers new opportunities to employ them as photocatalysts.

Photoluminescent, "ice-cream cone" like Cu-In-(Zn)-S/ZnS nanoheterostructures

Copper based ternary and quaternary quantum confined nanostructures have attracted huge attention over recent years due to their potential applications in photonics, photovoltaics, imaging, sensing and other areas. However, anisotropic nanoheterostructures of this type are still poorly explored to date, despite numerous predictions of the distinctive optical properties of these highly fluorescent heavy metal free nanostructures. Here, we report new fluorescent multicomponent Cu-In-(Zn)-S/ZnS nanoheterostructures with a unique anisotropic "ice-cream cone" like morphology. These nanostructures have been prepared with a seeded growth technique and exhibit distinct photophysical properties with maximum emission in the visible range (≈ 640 nm) and long photoluminescence lifetimes (τ_average ≥ 300 ns). In depth time interval studies have been carried out to better understand the step by step growth mechanism of this distinct "ice-cream cone" like geometry. We have demonstrated that the crystal structure evolution from the zinc blende Cu-In-S core to the wurtzite "ice cream cone" like Cu-In-(Zn)-S/ZnS nanocrystals plays a key role in the origin of this morphology. This research opens new possibilities to produce unique fluorescent Cu-based multicomponent anisotropic heteronanostructures, while also offering a distinctive insight into the design of bespoke nanostructures, which could find a range of potential applications.

Excitation-Energy-Dependent Photoluminescence Quantum Yield is Inherent to Optically Robust Core/Alloy-Shell Quantum Dots in a Vast Energy Landscape

The importance of alloy-shelling in optically robust Core/Alloy-Shell (CAS) QDs has been described from structural and energetic aspects. Unlike fluorescent dyes, both Core/Shell (CS) and CAS QDs exhibit excitation-energy-dependent photoluminescence quantum yield (PLQY). For both CdSe and InP CAS QDs (with metal- and nonmetal-based alloy-shelling, respectively), with increasing excitation energy, (a) the ultrafast rise-time or relaxation-time to the band-edge increases and (b) the magnitude of the normalized bleach signal decreases. Ultrasensitive single-particle spectroscopic investigation results showed that with decreasing excitation energy, (a) the fraction of ON events increases, (b) the ratio of exciton-detrapping rate/trapping rate increases, and (c) the extent of beneficial hole trapping increases. A relative decrease in PLQY with increasing excitation energy is much less pronounced in CAS QDs than in CS QDs. Unless trap states are removed completely especially in the higher-energy landscape, PLQY will remain inherently dependent on excitation energy for QDs in the vast energy landscape. When reporting the PLQY of QDs, the magnitude of the excitation energy must be mentioned.

Optical Properties of Mn-Doped CuGa(In)S-ZnS Nanocrystals (NCs): Effects of Host NC and Mn Concentration

Time-gated fluorescence measurement (TGFM) using long-life fluorescence probes is a highly sensitive fluorescence-measurement technology due to the inherently high signal-to-background ratio. Although many probes for TGFM such as luminescent-metal-complex probes and lanthanide-doped nanoparticles are in development, they generally need sophisticated/expensive instruments for biosensing/imaging applications. Probes possessing high brightness, low-energy (visible light) excitation, and long lifetimes up to milliseconds of luminescence, are highly desired in order to simplify the optical and electronic design of time-gated instruments (e.g., adopting non-UV-grade optics or low-speed electronics), lower the instrument complexity and cost, and facilitate broader applications of TGFM. In this work, we developed Mn-doped CuGa(In)S-ZnS nanocrystals (NCs) using simple and standard synthetic steps to achieve all the desired optical features in order to investigate how the optical properties (fluorescence/absorption spectra, brightness, and lifetimes) of the Mn-doped NCs are affected by different host NCs and Mn concentrations in host NCs. With optimal synthetic conditions, a library of Mn-doped NCs was achieved that possessed high brightness (up to 47% quantum yield), low-energy excitation (by 405 nm visible light), and long lifetimes (up to 3.67 ms). Additionally, the time-domain fluorescence characteristics of optimal Mn-doped NCs were measured under pulsed 405 nm laser excitation and bandpass-filter-based emission collection. The measurement results indicate the feasibility of these optimal Mn-doped NCs in TGFM-based biosensing/imaging.

Non-excitonic defect-assisted radiative transitions are responsible for new D-type blinking in ternary quantum dots

This work addresses the issue of dark states formation in QDs by cooperative excitonic and intrinsic defect-assisted radiative transitions. Here we refer to the observed blinking as D-type to distinguish it from purely excitonic types. It is shown experimentally that defect-assisted radiative relaxations in a single I-III-VI QD result in atypical blinking characteristics that cannot be explained on the basis of charged exciton models. In addition to the excitonic channel, it has been proposed that defect-assisted kinetics can also form blinking patterns. Two conditions for the formation of dark states have been identified which are related to correlation and competition when considering photons emitted from bright defects. Two transition schemes have therefore been proposed. The first transition scheme includes time-correlated trapping of more than one electron at a single trap centre. This is used to simulate variations in the defect's charge state and switching between radiative/nonradiative transitions. The latter scheme, on the other hand, involves uncorrelated trapping and radiative relaxations from two different types of defects (competition). Both schemes are seen to play an equal role in radiative processes in I-III-VI QDs. Considered together, the proposed models can reflect the experimental data with very good accuracy, providing a better understanding of the underlying physics. An important implication of these schemes is that dark states formation doesn't have to be limited to mechanisms that involve charged excitons, and it may also be observed for independent defect assisted kinetics. This is especially valid for highly defected or multinary QDs.

Unraveling the Emission Pathways in Copper Indium Sulfide Quantum Dots

Semiconductor copper indium sulfide quantum dots are emerging as promising alternatives to cadmium- and lead-based chalcogenides in solar cells, luminescent solar concentrators, and deep-tissue bioimaging due to their inherently lower toxicity and outstanding photoluminescence properties. However, the nature of their emission pathways remains a subject of debate. Using low-temperature single quantum dot spectroscopy on core-shell copper indium sulfide nanocrystals, we observe two subpopulations of particles with distinct spectral features. The first class shows sharp resolution-limited emission lines that are attributed to zero-phonon recombination lines of a long-lived band-edge exciton. Such emission results from the perfect passivation of the copper indium sulfide core by the zinc sulfide shell and points to an inversion in the band-edge hole levels. The second class exhibits ultrabroad spectra regardless of the temperature, which is a signature of the extrinsic self-trapping of the hole assisted by defects in imperfectly passivated quantum dots.

Synthesis and Optical Properties of In2S3-Hosted Colloidal Zn-Cu-In-S Nanoplatelets

High-efficiency photoluminescence quaternary hexagon Zn-Cu-In-S (ZCIS) nanoplatelets (NPls) have been synthesized by a two-step cation exchange method, which starts with the In₂S₃ NPls followed by the addition of Cu and Zn. It is the first time that In₂S₃ NPls are used as templates to synthesize ZCIS NPls. In this paper, the reaction temperature of In₂S₃ is essential for the formation of NPls. The photoluminescence wavelength of NPls can be tuned by adjusting the temperature of Cu addition. To enhance the stability of the resulting NPls and to improve their optical properties, we introduced Zn²⁺ and obtained ZCIS NPls by cation exchange on the surface. It is worth noting that the obtained ZCIS NPls show a shorter fluorescence lifetime than other ternary copper sulfide-based NPls. This work provides a new way to synthesize high-efficiency, nontoxic, and no byproduct ZCIS NPls.

Near-infrared emitting Cu-In-Se/ZnS core/shell quantum dots: aqueous synthesis and sulfur source effects

The present study reports an aqueous synthesis approach towards Cu-In-Se/ZnS quantum dots with emission in the near-infrared spectral range. The photoluminescence of the dots can be effectively controlled by adjusting the sulfur source, to achieve increased quantum yields (four times higher) and red-shifted emission peaks (from 809 nm to 830 nm).

Quo Vadis, Nanoparticle-Enabled In Vivo Fluorescence Imaging?

The exciting advancements that we are currently witnessing in terms of novel materials and synthesis approaches are leading to the development of colloidal nanoparticles (NPs) with increasingly greater tunable properties. We have now reached a point where it is possible to synthesize colloidal NPs with functionalities tailored to specific societal demands. The impact of this new wave of colloidal NPs has been especially important in the field of biomedicine. In that vein, luminescent NPs with improved brightness and near-infrared working capabilities have turned out to be optimal optical probes that are capable of fast and high-resolution in vivo imaging. However, luminescent NPs have thus far only reached a limited portion of their potential. Although we believe that the best is yet to come, the future might not be as bright as some of us think (and have hoped!). In particular, translation of NP-based fluorescence imaging from preclinical studies to clinics is not straightforward. In this Perspective, we provide a critical assessment and highlight promising research avenues based on the latest advances in the fields of luminescent NPs and imaging technologies. The disillusioned outlook we proffer herein might sound pessimistic at first, but we consider it necessary to avoid pursuing "pipe dreams" and redirect the efforts toward achievable-yet ambitious-goals.

Near-infrared heavy-metal-free SnSe/ZnSe quantum dots for efficient photoelectrochemical hydrogen generation

Solar-driven photoelectrochemical (PEC) hydrogen production is one of the most effective strategies for solar-to-hydrogen energy conversion. Among various types of semiconductors used for PEC anodes, colloidal quantum dots (QDs) have been widely used as new and promising absorbers for PEC and other optoelectronic devices. However, currently, most efficient optoelectronic devices contain toxic Pb/Cd elements or non-earth-abundant elements (In/Ag). It is still a challenge to produce Pb/Cd-free QDs without using any toxic and non-earth-abundant elements. Here, we synthesized SnSe QDs via a diffusion-controlled hot injection approach and further stabilized the as-prepared SnSe QDs via a cation exchange reaction. The as-synthesized Zn-stabilized SnSe QDs (SnSe/ZnSe) have an orthorhombic crystal structure with indirect bandgaps ranging from 1 to 1.37 eV. Zn stabilization can significantly decrease the number of QD surface metallic Sn bonds, thereby decreasing the number of recombination centers of defects/traps. As a proof-of-concept, SnSe/ZnSe QDs are used as light absorbers for PEC hydrogen production, leading to a saturated photocurrent density of 7 mA cm^-2, which is comparable to best values reported for PEC devices based on toxic-metal-free QDs. Our results indicate that Zn-stabilized SnSe QDs have great potential for use in emerging optoelectronic devices.

Near-Unity Photoluminescence Quantum Yield and Highly Suppressed Blinking in a Toxic-Metal-Free Quantum Dot

There is no literature report of simultaneously achieving near-unity PLQY (ensemble level) and highly suppressed blinking (ultrasensitive single-particle spectroscopy (SPS) level) in a toxic-metal-free QD. In this Letter we report accomplishing near-unity PLQY (96%) and highly suppressed blinking (>80% ON fraction) in a toxic-metal-free CuInS₂/ZnSeS Core/Alloy-Shell (CAS) QD. In addition, (i) gigantic enhancement of PLQY (from 15% (Core) to 96% (CAS QD)), (ii) ultrahigh stability over 1 year without significant reduction of PLQY at the ensemble level, (iii) high magnitude (nearly 3 times) of electron detrapping/trapping rate, and (iv) very long ON duration (∼2 min) without blinking at the SPS level enable this ultrasmall (∼3.3 nm) CAS QD to be quite suitable for single-particle tracking/bioimaging. A model explaining all these excellent optical properties has been provided. This ultrabright CAS QD has been successfully utilized toward fabrication of low-cost microcontroller-based stable and bright yellow and white QD-LEDs.

Optimizing spectral quality with quantum dots to enhance crop yield in controlled environments

Bioregenerative life-support systems (BLSS) involving plants will be required to realize self-sustaining human settlements beyond Earth. To improve plant productivity in BLSS, the quality of the solar spectrum can be modified by lightweight, luminescent films. CuInS2/ZnS quantum dot (QD) films were used to down-convert ultraviolet/blue photons to red emissions centered at 600 and 660 nm, resulting in increased biomass accumulation in red romaine lettuce. All plant growth parameters, except for spectral quality, were uniform across three production environments. Lettuce grown under the 600 and 660 nm-emitting QD films respectively increased edible dry mass (13 and 9%), edible fresh mass (11% each), and total leaf area (8 and 13%) compared with under a control film containing no QDs. Spectral modifications by the luminescent QD films improved photosynthetic efficiency in lettuce and could enhance productivity in greenhouses on Earth, or in space where, further conversion is expected from greater availability of ultraviolet photons.

Unusual Spectral Diffusion of Single CuInS2 Quantum Dots Sheds Light on the Mechanism of Radiative Decay

The luminescence of CuInS₂ quantum dots (QDs) is slower and spectrally broader than that of many other types of QDs. The origin of this anomalous behavior is still under debate. Single-QD experiments could help settle this debate, but studies by different groups have yielded conflicting results. Here, we study the photophysics of single core-only CuInS₂ and core/shell CuInS₂/CdS QDs. Both types of single QDs exhibit broad PL spectra with fluctuating peak position and single-exponential photoluminescence decay with a slow but fluctuating lifetime. Spectral diffusion of CuInS₂-based QDs is qualitatively and quantitatively different from CdSe-based QDs. The differences reflect the dipole moment of the CuInS₂ excited state and hole localization on a preferred site in the QD. Our results unravel the highly dynamic photophysics of CuInS₂ QDs and highlight the power of the analysis of single-QD property fluctuations.

Recent research on the luminous mechanism, synthetic strategies, and applications of CuInS2 quantum dots

We discuss the synthesis and luminescence mechanisms of CuInS₂ QDs, the strategies to improve their luminous performance and their potential application in light-emitting devices, solar energy conversion, and the biomedical field.

FRET-Based Analysis of AgInS2/ZnAgInS/ZnS Quantum Dot Recombination Dynamics

Ternary quantum dots (QDs) are very promising nanomaterials with a range of potential applications in photovoltaics, light-emitting devices, and biomedicine. Despite quite intensive studies of ternary QDs over the last years, the specific relaxation channels involved in their emission mechanisms are still poorly understood, particularly in the corresponding core-shell nanostructures. In the present work, we have studied the recombination pathways of AgInS₂ QDs stabilized with the ZnAgInS alloy layer and the ZnS shell (AIS/ZAIS/ZnS QDs) using time-resolved fluorescence spectroscopy. We have also investigated FRET in complexes of AIS/ZAIS/ZnS QDs and cyanine dyes with the absorption bands overlapping in the different regions of the QD emission spectrum, which allowed us to selectively quench the radiative transitions of the QDs. Our studies have demonstrated that FRET from QDs to dyes results in decreasing of all QD PL decay components with the shortest lifetime decreasing the most and the longest one decreasing the least. This research presents important approaches for the investigation of ternary QD luminescence mechanisms by the selective quenching of recombination pathways. These studies are also essential for potential applications of ternary QDs in photodynamic therapy, multiplex analysis, and time-resolved FRET sensing.

Controllable modulation of precursor reactivity using chemical additives for systematic synthesis of high-quality quantum dots

The optical and electronic performance of quantum dots (QDs) are affected by their size distribution and structural quality. Although the synthetic strategies for size control are well established and widely applicable to various QD systems, the structural characteristics of QDs, such as morphology and crystallinity, are tuned mostly by trial and error in a material-specific manner. Here, we show that reaction temperature and precursor reactivity, the two parameters governing the surface-reaction kinetics during growth, govern the structural quality of QDs. For conventional precursors, their reactivity is determined by their chemical structure. Therefore, a variation of precursor reactivity requires the synthesis of different precursor molecules. As a result, existing precursor selections often have significant gaps in reactivity or require synthesis of precursor libraries comprising a large number of variants. We designed a sulfur precursor employing a boron-sulfur bond, which enables controllable modulation of their reactivity using commercially available Lewis bases. This precursor chemistry allows systematic optimization of the reaction temperature and precursor reactivity using a single precursor and grows high-quality QDs from cores of various sizes and materials. This work provides critical insights into the nanoparticle growth process and precursor designs, enabling the systematic preparation of high-quality QD of any sizes and materials.

Synthesis of high crystal quality quantum dots (QDs) requires optimization of reaction temperature and precursor reactivity. Here, the authors report precursor chemistry that enables controllable modulation of precursor reactivity using chemical additives, and systematically grow high-quality QDs from cores of various sizes and materials.

Solution-processable integrated CMOS circuits based on colloidal CuInSe2 quantum dots

The emerging technology of colloidal quantum dot electronics provides an opportunity for combining the advantages of well-understood inorganic semiconductors with the chemical processability of molecular systems. So far, most research on quantum dot electronic devices has focused on materials based on Pb- and Cd chalcogenides. In addition to environmental concerns associated with the presence of toxic metals, these quantum dots are not well suited for applications in CMOS circuits due to difficulties in integrating complementary n- and p-channel transistors in a common quantum dot active layer. Here, we demonstrate that by using heavy-metal-free CuInSe₂ quantum dots, we can address the problem of toxicity and simultaneously achieve straightforward integration of complimentary devices to prepare functional CMOS circuits. Specifically, utilizing the same spin-coated layer of CuInSe₂ quantum dots, we realize both p- and n-channel transistors and demonstrate well-behaved integrated logic circuits with low switching voltages compatible with standard CMOS electronics.

Designing efficient toxic-element-free technologies in solution-processable CMOS electronics remains a challenge. Here, the authors demonstrate integrated logic CMOS circuits based on heavy-metal-free colloidal CuInSe₂ quantum dots with low switching voltages and with degradation-free performance on month-long time scales.

Controlled Photoinduced Electron Transfer from InP/ZnS Quantum Dots through Cu Doping: A New Prototype for the Visible-Light Photocatalytic Hydrogen Evolution Reaction

Photoexcited electron extraction from semiconductors can be useful for converting solar energy into useful forms of energy. Although InP quantum dots (QDs) are considered alternative materials for solar energy conversion, the inherent instability of bare InP QDs demands the use of passivation layers such as ZnS for practical applications, which impedes carrier extraction from the QDs. Here, we demonstrate that Cu-doped InP/ZnS (InP/Cu:ZnS) QDs improve the electron transfer ability due to hole capture by Cu dopants. Steady-state and time-resolved photoluminescence studies confirmed that electrons were effectively transferred from the InP/Cu:ZnS QDs to a benzoquinone acceptor by retarding the electron-hole recombination within the QD. We evaluated the photocatalytic H₂ evolution performance of InP/Cu:ZnS QDs under visible light, which showed outstanding photocatalytic H₂ evolution activity and stability under visible light illumination. The photocatalytic activity was preserved even in the absence of a cocatalyst.

Near-infrared-emitting CIZSe/CIZS/ZnS colloidal heteronanonail structures

Multicomponent quantum nanostructures have attracted significant attention due to their potential applications in photovoltaics, optoelectronics and bioimaging. However, the preparation of anisotropic quaternary nanoheterostructures such as Cu-In-Zn-S(Se) (CIZS and CIZSe) is still very poorly explored and understood. Here, we report the synthesis and studies of NIR emissive CIZSe/CIZS/ZnS core/shell/shell nanoheterostructures with a unique hetero-nanonail (HNN) morphology. In our approach, wurtzite (WZ) CIZSe/CIZS core/shell QDs have been prepared by depositing a CIZS shell onto a previously synthesized chalcopyrite CIZSe QD core using a seeded growth technique. Following careful control of the ZnS shell growth resulted in the formation of the distinct nail-like CIZSe/CIZS/ZnS nanoheterostructure, where the CIZSe/CIZS core/shell QD is located near the "head" of the nail. The emission in the NIR region of the CIZSe/CIZS/ZnS nanocrystals is assigned to the CIZSe/CIZS core/shell quantum nanostructure. The CIZSe/CIZS/ZnS HNNs are particularly interesting due to a range of potential applications including bioimaging, biosensing, energy harvesting and NIR photodetectors. Finally, we also report the successful controlled growth of gold nanoparticles on the surface of the CIZSe/CIZS/ZnS nanonail-like heterostructure and the investigation of the resulting multimodal nanocomposites.