Making Graphene Nanoribbons Photoluminescent

On-surface synthesis of porous graphene nanoribbons mediated by phenyl migration

Advancements in the on-surface synthesis of atomically precise graphene nanostructures are propelled by the introduction of innovative precursor designs and reaction types. Until now, the latter has been confined to cross-coupling and cyclization reactions that involve the cleavage of specific atoms or groups. In this article, we elucidate how the migration of phenyl substituents attached to graphene nanoribbons can be harnessed to generate arrays of [18]-annulene pores at the edges of the nanostructures. This sequential pathway is revealed through a comprehensive study employing bond-resolved scanning tunneling microscopy and ab-initio computational techniques. The yield of pore formation is maximized by anchoring the graphene nanoribbons at steps of vicinal surfaces, underscoring the potential of these substrates to guide reaction paths. Our study introduces a new reaction to the on-surface synthesis toolbox along with a sequential route, altogether enabling the extension of this strategy towards the formation of other porous nanostructures.

Tuneable Current Rectification Through a Designer Graphene Nanoribbon

Unimolecular current rectifiers are fundamental building blocks in organic electronics. Rectifying behavior has been identified in numerous organic systems due to electron-hole asymmetries of orbital levels interfaced by a metal electrode. As a consequence, the rectifying ratio (RR) determining the diode efficiency remains fixed for a chosen molecule-metal interface. Here, a mechanically tunable molecular diode exhibiting an exceptionally large rectification ratio (>105) and reversible direction is presented. The molecular system comprises a seven-armchair graphene nanoribbon (GNR) doped with a single unit of substitutional diboron within its structure, synthesized with atomic precision on a gold substrate by on-surface synthesis. The diboron unit creates half-populated in-gap bound states and splits the GNR frontier bands into two segments, localizing the bound state in a double barrier configuration. By suspending these GNRs freely between the tip of a low-temperature scanning tunneling microscope and the substrate, unipolar hole transport is demonstrated through the boron in-gap state's resonance. Strong current rectification is observed, associated with the varying widths of the two barriers, which can be tuned by altering the distance between tip and substrate. This study introduces an innovative approach for the precise manipulation of molecular electronic functionalities, opening new avenues for advanced applications in organic electronics.

Electrically induced net magnetization in FePSe3 nanoribbons: the role of edge reconstructions

Magnetized edge states of nanoribbon systems open a new path for designing functional spintronic devices. Here, we introduce a general mechanism for electrically generating nonzero net magnetization in antiferromagnetic (AFM) semiconducting nanoribbons. In the proposed spin configuration, in which the empty and occupied edge states of one side close to the Fermi energy are in the same spin channel, the Zeeman-type spin splitting between the states of opposite edges arising from the electric field allow the system to be tuned from the AFM semiconducting phase to the ferromagnetic (FM) metallic phase, yielding nonzero net magnetization. Our ab initio calculations show that this strategy is realizable in the example of the FePSe3 nanoribbon, in which self-passivation-driven reconstruction at the Se termination edge gives rise to the key spin configuration. Moreover, we demonstrate that an electric field could trigger a series of electronic phase transitions among AFM semiconductor, AFM half-metal, and FM metal phases, based on which we were able to design an electronically controllable versatile spintronics device.

On-surface synthesis and characterization of teranthene and hexanthene: ultrashort graphene nanoribbons with mixed armchair and zigzag edges

Graphene nanoribbons (GNRs) exhibit a broad range of physicochemical properties that critically depend on their width and edge topology. GNRs with armchair edges (AGNRs) are usually more stable than their counterparts with zigzag edges (ZGNRs) where the low-energy spin-polarized edge states render the ribbons prone to being altered by undesired chemical reactions. On the other hand, such edge-localized states make ZGNRs highly appealing for applications in spintronic and quantum technologies. For GNRs fabricated via on-surface synthesis under ultrahigh vacuum conditions on metal substrates, the expected reactivity of zigzag edges is a serious concern in view of substrate transfer and device integration under ambient conditions, but corresponding investigations are scarce. Using 10-bromo-9,9':10',9''-teranthracene as a precursor, we have thus synthesized hexanthene (HA) and teranthene (TA) as model compounds for ultrashort GNRs with mixed armchair and zigzag edges, characterized their chemical and electronic structure by means of scanning probe methods, and studied their chemical reactivity upon air exposure by Raman spectroscopy. We present a detailed identification of molecular orbitals and vibrational modes, assign their origin to armchair or zigzag edges, and discuss the chemical reactivity of these edges based on characteristic Raman spectral features.

Hydrogenation of Hexa-peri-hexabenzocoronene: An Entry to Nanographanes and Nanodiamonds

The fabrication of atomically precise nanographanes is a largely unexplored frontier in carbon-sp3 nanomaterials, enabling potential applications in phononics, photonics and electronics. One strategy is the hydrogenation of prototypical nanographene monolayers and multilayers under vacuum conditions. Here, we study the interaction of atomic hydrogen, generated by a hydrogen source and hydrogen plasma, with hexa-peri-hexabenzocoronene on gold using integrated time-of-flight mass spectrometry, scanning tunneling microscopy and Raman spectroscopy. Density functional tight-binding molecular dynamics is employed to rationalize the conversion to sp3 carbon atoms. The resulting hydrogenation of hexa-peri-hexabenzocoronene molecules is demonstrated computationally and experimentally, and the potential for atomically precise hexa-peri-hexabenzocoronene-derived nanodiamond fabrication is proposed.

On-Surface Synthesis of Graphene Nanoribbons with Atomically Precise Structural Heterogeneities and On-Site Characterizations

Graphene nanoribbons (GNRs) are strips of graphene, with widths of a few nanometers, that are promising candidates for future applications in nanodevices and quantum information processing due to their highly tunable structure-dependent electronic, spintronic, topological, and optical properties. Implantation of periodic structural heterogeneities, such as heteroatoms, nanopores, and non-hexagonal rings, has become a powerful manner for tailoring the designer properties of GNRs. The bottom-up synthesis approach, by combining on-surface chemical reactions based on rationally designed molecular precursors and in situ tip-based microscopic and spectroscopic techniques, promotes the construction of atomically precise GNRs with periodic structural modulations. However, there are still obstacles and challenges lying on the way toward the understanding of the intrinsic structure-property relations, such as the strong screening and Fermi level pinning effect of the normally used transition metal substrates and the lack of collective tip-based techniques that can cover multi-internal degrees of freedom of the GNRs. In this Perspective, we briefly review the recent progress in the on-surface synthesis of GNRs with diverse structural heterogeneities and highlight the structure-property relations as characterized by the noncontact atomic force microscopy and scanning tunneling microscopy/spectroscopy. We furthermore motivate to deliver the need for developing strategies to achieve quasi-freestanding GNRs and for exploiting multifunctional tip-based techniques to collectively probe the intrinsic properties.

Contacting individual graphene nanoribbons using carbon nanotube electrodes

Graphene nanoribbons synthesized using bottom-up approaches can be structured with atomic precision, allowing their physical properties to be precisely controlled. For applications in quantum technology, the manipulation of single charges, spins or photons is required. However, achieving this at the level of single graphene nanoribbons is experimentally challenging due to the difficulty of contacting individual nanoribbons, particularly on-surface synthesized ones. Here we report the contacting and electrical characterization of on-surface synthesized graphene nanoribbons in a multigate device architecture using single-walled carbon nanotubes as the electrodes. The approach relies on the self-aligned nature of both nanotubes, which have diameters as small as 1 nm, and the nanoribbon growth on their respective growth substrates. The resulting nanoribbon-nanotube devices exhibit quantum transport phenomena-including Coulomb blockade, excited states of vibrational origin and Franck-Condon blockade-that indicate the contacting of individual graphene nanoribbons.

Small Size, Big Impact: Recent Progress in Bottom-Up Synthesized Nanographenes for Optoelectronic and Energy Applications

Bottom-up synthesized graphene nanostructures, including 0D graphene quantum dots and 1D graphene nanoribbons, have recently emerged as promising candidates for efficient, green optoelectronic, and energy storage applications. The versatility in their molecular structures offers a large and novel library of nanographenes with excellent and adjustable optical, electronic, and catalytic properties. In this minireview, recent progress on the fundamental understanding of the properties of different graphene nanostructures, and their state-of-the-art applications in optoelectronics and energy storage are summarized. The properties of pristine nanographenes, including high emissivity and intriguing blinking effect in graphene quantum dots, superior charge transport properties in graphene nanoribbons, and edge-specific electrochemistry in various graphene nanostructures, are highlighted. Furthermore, it is shown that emerging nanographene-2D material-based van der Waals heterostructures provide an exciting opportunity for efficient green optoelectronics with tunable characteristics. Finally, challenges and opportunities of the field are highlighted by offering guidelines for future combined efforts in the synthesis, assembly, spectroscopic, and electrical studies as well as (nano)fabrication to boost the progress toward advanced device applications.

Understanding Heterogeneities in Quantum Materials

Quantum materials are usually heterogeneous, with structural defects, impurities, surfaces, edges, interfaces, and disorder. These heterogeneities are sometimes viewed as liabilities within conventional systems; however, their electronic and magnetic structures often define and affect the quantum phenomena such as coherence, interaction, entanglement, and topological effects in the host system. Therefore, a critical need is to understand the roles of heterogeneities in order to endow materials with new quantum functions for energy and quantum information science applications. In this article, several representative examples are reviewed on the recent progress in connecting the heterogeneities to the quantum behaviors of real materials. Specifically, three intertwined topic areas are assessed: i) Reveal the structural, electronic, magnetic, vibrational, and optical degrees of freedom of heterogeneities. ii) Understand the effect of heterogeneities on the behaviors of quantum states in host material systems. iii) Control heterogeneities for new quantum functions. This progress is achieved by establishing the atomistic-level structure-property relationships associated with heterogeneities in quantum materials. The understanding of the interactions between electronic, magnetic, photonic, and vibrational states of heterogeneities enables the design of new quantum materials, including topological matter and quantum light emitters based on heterogenous 2D materials.

Directional copper dewetting to grow graphene ribbon arrays

The V-groove confines the anisotropic dewetting of Cu film to form ribbons. The influence mechanism of film thickness and annealing procedure on the confined dewetting, structural and morphological evolution has been investigated. Thus, the synthesized graphene ribbons by CVD have uniform width, regular edges and good crystallinity, and deliver obvious room-temperature PL emission.

Photoluminescent Semiconducting Graphene Nanoribbons via Longitudinally Unzipping Single-Walled Carbon Nanotubes

The lack of a sizeable band gap has so far prevented graphene from building effective electronic and optoelectronic devices despite its numerous exceptional properties. Intensive theoretical research reveals that a band gap larger than 1 eV can only be achieved in sub-3 nm wide graphene nanoribbons (GNRs), but real fabrication of such ultranarrow GNRs still remains a critical challenge. Herein, we demonstrate an approach for the synthesis of ultranarrow and photoluminescent semiconducting GNRs by longitudinally unzipping single-walled carbon nanotubes. Atomic force microscopy reveals the unzipping process, and the resulting 2.2 nm wide GNRs are found to emit strong and sharp photoluminescence at ∼685 nm, demonstrating a very desirable semiconducting nature. This band gap of 1.8 eV is further confirmed by follow-up photoconductivity measurements, where a considerable photocurrent is generated, as the excitation wavelength becomes shorter than 700 nm. More importantly, our fabricated GNR field-effect transistors (FETs), by employing the hexagonal boron nitride-encapsulated heterostructure to achieve edge-bonded contacts, demonstrate a high current on/off ratio beyond 105 and carrier mobility of 840 cm2/V s, approaching the theoretical scattering limit in semiconducting GNRs at room temperature. Especially, highly aligned GNR bundles with lengths up to a millimeter are also achieved by prepatterning a template, and the fabricated GNR bundle FETs show a high on/off ratio reaching 105, well-defined saturation currents, and strong light-emitting properties. Therefore, GNRs produced by this method open a door for promising applications in graphene-based electronics and optoelectronics.

Atomically precise graphene nanoribbons: interplay of structural and electronic properties

Graphene nanoribbons hold great promise for future applications in nanoelectronic devices, as they may combine the excellent electronic properties of graphene with the opening of an electronic band gap - not present in graphene but required for transistor applications. With a two-step on-surface synthesis process, graphene nanoribbons can be fabricated with atomic precision, allowing precise control over width and edge structure. Meanwhile, a decade of research has resulted in a plethora of graphene nanoribbons having various structural and electronic properties. This article reviews not only the on-surface synthesis of atomically precise graphene nanoribbons but also how their electronic properties are ultimately linked to their structure. Current knowledge and considerations with respect to precursor design, which eventually determines the final (electronic) structure, are summarized. Special attention is dedicated to the electronic properties of graphene nanoribbons, also in dependence on their width and edge structure. It is exactly this possibility of precisely changing their properties by fine-tuning the precursor design - offering tunability over a wide range - which has generated this vast research interest, also in view of future applications. Thus, selected device prototypes are presented as well.

Tunneling current modulation in atomically precise graphene nanoribbon heterojunctions

Lateral heterojunctions of atomically precise graphene nanoribbons (GNRs) hold promise for applications in nanotechnology, yet their charge transport and most of the spectroscopic properties have not been investigated. Here, we synthesize a monolayer of multiple aligned heterojunctions consisting of quasi-metallic and wide-bandgap GNRs, and report characterization by scanning tunneling microscopy, angle-resolved photoemission, Raman spectroscopy, and charge transport. Comprehensive transport measurements as a function of bias and gate voltages, channel length, and temperature reveal that charge transport is dictated by tunneling through the potential barriers formed by wide-bandgap GNR segments. The current-voltage characteristics are in agreement with calculations of tunneling conductance through asymmetric barriers. We fabricate a GNR heterojunctions based sensor and demonstrate greatly improved sensitivity to adsorbates compared to graphene based sensors. This is achieved via modulation of the GNR heterojunction tunneling barriers by adsorbates.

"Broken-hearted" carbon bowl via electron shuttle reaction: energetics and electron coupling

Unprecedented one-step C[double bond, length as m-dash]C bond cleavage leading to opening of the buckybowl (π-bowl), that could provide access to carbon-rich structures with previously inaccessible topologies, is reported; highlighting the possibility to implement drastically different synthetic routes to π-bowls in contrast to conventional ones applied for polycyclic aromatic hydrocarbons. Through theoretical modeling, we evaluated the mechanistic pathways feasible for π-bowl planarization and factors that could affect such a transformation including strain and released energies. Through employment of Marcus theory, optical spectroscopy, and crystallographic analysis, we estimated the possibility of charge transfer and electron coupling between "open" corannulene and a strong electron acceptor such as 7,7,8,8-tetracyanoquinodimethane. Alternative to a one-pot solid-state corannulene "unzipping" route, we reported a nine-step solution-based approach for preparation of novel planar "open" corannulene-based derivatives in which electronic structures and photophysical profiles were estimated through the energies and isosurfaces of the frontier natural transition orbitals.

Transfer-Free Synthesis of Atomically Precise Graphene Nanoribbons on Insulating Substrates

The rational bottom-up synthesis of graphene nanoribbons (GNRs) provides atomically precise control of widths and edges that give rise to a wide range of electronic properties promising for electronic devices such as field-effect transistors (FETs). Since the bottom-up synthesis commonly takes place on catalytic metallic surfaces, the integration of GNRs into such devices requires their transfer onto insulating substrates, which remains one of the bottlenecks in the development of GNR-based electronics. Herein, we report on a method for the transfer-free placement of GNRs on insulators. This involves growing GNRs on a gold film deposited onto an insulating layer followed by gentle wet etching of the gold, which leaves the nanoribbons to settle in place on the underlying insulating substrate. Scanning tunneling microscopy and Raman spectroscopy confirm that atomically precise GNRs of high density uniformly grow on the gold films deposited onto SiO₂/Si substrates and remain structurally intact after the etching process. We have also demonstrated transfer-free fabrication of ultrashort channel GNR FETs using this process. A very important aspect of the present work is that the method can scale up well to 12 in. wafers, which is extremely difficult for previous techniques. Our work here thus represents an important step toward large-scale integration of GNRs into electronic devices.

Photothermal Bottom-up Graphene Nanoribbon Growth Kinetics

We present laser-induced photothermal synthesis of atomically precise graphene nanoribbons (GNRs). The kinetics of photothermal bottom-up GNR growth are unravelled by in situ Raman spectroscopy carried out in ultrahigh vacuum. We photothermally drive the reaction steps by short periods of laser irradiation and subsequently analyze the Raman spectra of the reactants in the irradiated area. Growth kinetics of chevron GNRs (CGNRs) and seven atoms wide armchair GNRs (7-AGNRs) is investigated. The reaction rate constants for polymerization, cyclodehydrogenation, and interribbon fusion are experimentally determined. We find that the limiting rate constants for CGNR growth are several hundred times smaller than for 7-AGNR growth and that interribbon fusion is an important elementary reaction occurring during 7-AGNR growth. Our work highlights that photothermal synthesis and in situ Raman spectroscopy are a powerful tandem for the investigation of on-surface reactions.

Controlled Quantum Dot Formation in Atomically Engineered Graphene Nanoribbon Field-Effect Transistors

Graphene nanoribbons (GNRs) have attracted strong interest from researchers worldwide, as they constitute an emerging class of quantum-designed materials. The major challenges toward their exploitation in electronic applications include reliable contacting, complicated by their small size (<50 nm), and the preservation of their physical properties upon device integration. In this combined experimental and theoretical study, we report on the quantum dot behavior of atomically precise GNRs integrated in a device geometry. The devices consist of a film of aligned five-atom-wide GNRs (5-AGNRs) transferred onto graphene electrodes with a sub 5 nm nanogap. We demonstrate that these narrow-bandgap 5-AGNRs exhibit metal-like behavior at room temperature and single-electron transistor behavior for temperatures below 150 K. By performing spectroscopy of the molecular levels at 13 K, we obtain addition energies in the range of 200-300 meV. DFT calculations predict comparable addition energies and reveal the presence of two electronic states within the bandgap of infinite ribbons when the finite length of the 5-AGNR is accounted for. By demonstrating the preservation of the 5-AGNRs' molecular levels upon device integration, as demonstrated by transport spectroscopy, our study provides a critical step forward in the realization of more exotic GNR-based nanoelectronic devices.

Engineering Edge States of Graphene Nanoribbons for Narrow-Band Photoluminescence

Solid-state narrow-band light emitters are on-demand for quantum optoelectronics. Current approaches based on defect engineering in low-dimensional materials usually introduce a broad range of emission centers. Here, we report narrow-band light emission from covalent heterostructures fused to the edges of graphene nanoribbons (GNRs) by controllable on-surface reactions from molecular precursors. Two types of heterojunction (HJ) states are realized by sequentially synthesizing GNRs and graphene nanodots (GNDs) and then coupling them together. HJs between armchair GNDs and armchair edges of the GNR are coherent and give rise to narrow-band photoluminescence. In contrast, HJs between the armchair GNDs and the zigzag ends of GNRs are defective and give rise to nonradiative states near the Fermi level. At low temperatures, sharp photoluminescence emissions with peak energy range from 2.03 to 2.08 eV and line widths of 2-5 meV are observed. The radiative HJ states are uniform, and the optical transition energy is controlled by the band gaps of GNRs and GNDs. As these HJs can be synthesized in a large quantity with atomic precision, this finding highlights a route to programmable and deterministic creation of quantum light emitters.

Optical Imaging and Spectroscopy of Atomically Precise Armchair Graphene Nanoribbons

We report the optical imaging and absorption spectroscopy on atomically precise armchair graphene nanoribbons (GNRs) on insulating fused silica substrates. This is achieved by controlling light polarization on macroscopically aligned GNRs which greatly enhances the optical contrast of the submonolayer GNRs on the insulating substrates. We measure the linear absorption spectra of 7-armchair and 9-armchair GNRs in this study, and the experimental data agree qualitatively with ab inito calculation results. The polarization spectroscopy technique enables an unambiguous optical identification of GNRs and provides a rapid tool to characterize the transferred film over a large area.

An efficient flexible graphene-based light-emitting device

In recent years, flexible light-emitting devices (LEDs) have become the main focus in the field of display technology. Graphene, a two-dimensional layered material, has attracted great interest in LEDs due to its excellent properties. However, there are many problems such as efficiency, lifetime, and flexibility not well solved. Herein, we have successfully prepared a flexible LED using laser-induced reduced graphene oxide (LIRGO). The LIRGO LED achieves a luminescence lifetime of over 60 hours and a wall plug efficiency of up to 1.4% in a vacuum environment of 0.02 Pa. There are many small luminescent spots randomly distributed on 3.5 × 5 mm2 of LIRGO. LIRGO's luminous behavior can be controlled by modifying the supply voltage and laser reduction intensity. We also explore LIRGO's applications by testing it in different packages and customizable bulbs. Furthermore, as an interesting demo, the LIRGO device can be used to mimic constellations with visual shapes. This work demonstrates LIRGO's great potential in many fields, such as flexible and miniature light sources and displays.

A Universal Length-Dependent Vibrational Mode in Graphene Nanoribbons

Graphene nanoribbons (GNRs) have attracted considerable interest, as their atomically tunable structure makes them promising candidates for future electronic devices. However, obtaining detailed information about the length of GNRs has been challenging and typically relies on low-temperature scanning tunneling microscopy. Such methods are ill-suited for practical device application and characterization. In contrast, Raman spectroscopy is a sensitive method for the characterization of GNRs, in particular for investigating their width and structure. Here, we report on a length-dependent, Raman-active low-energy vibrational mode that is present in atomically precise, bottom-up-synthesized armchair graphene nanoribbons (AGNRs). Our Raman study demonstrates that this mode is present in all families of AGNRs and provides information on their length. Our spectroscopic findings are corroborated by scanning tunneling microscopy images and supported by first-principles calculations that allow us to attribute this mode to a longitudinal acoustic phonon. Finally, we show that this mode is a sensitive probe for the overall structural integrity of the ribbons and their interaction with technologically relevant substrates.

Nonradiative Excited-State Decay via Conical Intersection in Graphene Nanostructures

Chemical groups are known to tune the luminescent efficiencies of graphene-related nanomaterials, but some species, including the epoxide group (-COC-), are suspected to act as emission-quenching sites. Herein, by performing nonadiabatic excited-state dynamics simulations, we reveal a fast (within 300 fs) nonradiative excited-state decay of a graphene epoxide nanostructure from the lowest excited singlet (S₁ ) state to the ground (S₀ ) state via a conical intersection (CI), at which the energy difference between the S₁ and S₀ states is approximately zero. This CI is induced after breaking one C-O bond at the -COC- moiety during excited-state structural relaxation. This study ascertains the role of epoxide groups in inducing the nonradiative recombination of the excited electron-hole, providing important insights into the CI-promoted nonradiative de-excitations and the luminescence tuning of relevant materials. In addition, it shows the feasibility of utilizing nonadiabatic excited-state dynamics simulations to investigate the photophysical processes of the excited states of graphene nanomaterials.

Single-step growth of graphene and graphene-based nanostructures by plasma-enhanced chemical vapor deposition

The realization of many promising technological applications of graphene and graphene-based nanostructures depends on the availability of reliable, scalable, high-yield and low-cost synthesis methods. Plasma enhanced chemical vapor deposition (PECVD) has been a versatile technique for synthesizing many carbon-based materials, because PECVD provides a rich chemical environment, including a mixture of radicals, molecules and ions from hydrocarbon precursors, which enables graphene growth on a variety of material surfaces at lower temperatures and faster growth than typical thermal chemical vapor deposition. Here we review recent advances in the PECVD techniques for synthesis of various graphene and graphene-based nanostructures, including horizontal growth of monolayer and multilayer graphene sheets, vertical growth of graphene nanostructures such as graphene nanostripes with large aspect ratios, direct and selective deposition of monolayer and multi-layer graphene on nanostructured substrates, and growth of multi-wall carbon nanotubes. By properly controlling the gas environment of the plasma, it is found that no active heating is necessary for the PECVD growth processes, and that high-yield growth can take place in a single step on a variety of surfaces, including metallic, semiconducting and insulating materials. Phenomenological understanding of the growth mechanisms are described. Finally, challenges and promising outlook for further development in the PECVD techniques for graphene-based applications are discussed.

Controlling a Chemical Coupling Reaction on a Surface: Tools and Strategies for On-Surface Synthesis

On-surface synthesis is appearing as an extremely promising research field aimed at creating new organic materials. A large number of chemical reactions have been successfully demonstrated to take place directly on surfaces through unusual reaction mechanisms. In some cases the reaction conditions can be properly tuned to steer the formation of the reaction products. It is thus possible to control the initiation step of the reaction and its degree of advancement (the kinetics, the reaction yield); the nature of the reaction products (selectivity control, particularly in the case of competing processes); as well as the structure, position, and orientation of the covalent compounds, or the quality of the as-formed networks in terms of order and extension. The aim of our review is thus to provide an extensive description of all tools and strategies reported to date and to put them into perspective. We specifically define the different approaches available and group them into a few general categories. In the last part, we demonstrate the effective maturation of the on-surface synthesis field by reporting systems that are getting closer to application-relevant levels thanks to the use of advanced control strategies.

Alignment of semiconducting graphene nanoribbons on vicinal Ge(001)

Chemical vapor deposition of CH4 on Ge(001) can enable anisotropic growth of narrow, semiconducting graphene nanoribbons with predominately smooth armchair edges and high-performance charge transport properties. However, such nanoribbons are not aligned in one direction but instead grow perpendicularly, which is not optimal for integration into high-performance electronics. Here, it is demonstrated that vicinal Ge(001) substrates can be used to synthesize armchair nanoribbons, of which ∼90% are aligned within ±1.5° perpendicular to the miscut. When the growth rate is slow, graphene crystals evolve as nanoribbons. However, as the growth rate increases, the uphill and downhill crystal edges evolve asymmetrically. This asymmetry is consistent with stronger binding between the downhill edge and the Ge surface, for example due to different edge termination as shown by density functional theory calculations. By tailoring growth rate and time, nanoribbons with sub-10 nm widths that exhibit excellent charge transport characteristics, including simultaneous high on-state conductance of 8.0 μS and a high on/off conductance ratio of 570 in field-effect transistors, are achieved. Large-area alignment of semiconducting ribbons with promising charge transport properties is an important step towards understanding the anisotropic nanoribbon growth and integrating these materials into scalable, future semiconductor technologies.

Step edge-mediated assembly of periodic arrays of long graphene nanoribbons on Au(111)

Step edges on Au(111) surface are found to promote the assembly of compact polymer arrays with enhanced interchain π–π interactions, which in turn lead to periodic arrays of graphene nanoribbons with enhanced average length near step edges.

Observation of Room-Temperature Photoluminescence Blinking in Armchair-Edge Graphene Nanoribbons

By enhancing the photoluminescence from aligned seven-atom wide armchair-edge graphene nanoribbons using plasmonic nanoantennas, we are able to observe blinking of the emission. The on- and off-times of the blinking follow power law statistics. In time-resolved spectra, we observe spectral diffusion. These findings together are a strong indication of the emission originating from a single quantum emitter. The room temperature photoluminescence displays a narrow spectral width of less than 50 meV, which is significantly smaller than the previously observed ensemble line width of 0.8 eV. From spectral time traces, we identify three optical transitions, which are energetically situated below the lowest bulk excitonic state E₁₁ of the nanoribbons. We attribute the emission to transitions involving Tamm states localized at the end of the nanoribbon. The photoluminescence from a single ribbon is strongly enhanced when its end is in the antenna hot spot resulting in the observed single molecule characteristics of the emission. Our findings illustrate the essential role of the end termination of graphene nanoribbons in light emission and allow us to construct a model for photoluminescence from nanoribbons.

Exciton and phonon dynamics in highly aligned 7-atom wide armchair graphene nanoribbons as seen by time-resolved spontaneous Raman scattering

The opening of a band gap in graphene nanoribbons induces novel optical and electronic properties, strongly enhancing their application potential in nanoscale devices. Knowledge of the optical excitations and associated relaxation dynamics are essential for developing and optimizing device designs and functionality. Here we report on the optical excitations and associated relaxation dynamics in surface aligned 7-atom wide armchair graphene nanoribbons as seen by time-resolved spontaneous Stokes and anti-Stokes Raman scattering spectroscopy. On the anti-Stokes side we observe an optically induced increase of the scattering intensity of the Raman active optical phonons which we assign to changes in the optical phonon populations. The optical phonon population decays with a lifetime of ∼2 ps, indicating an efficient optical-acoustic phonon cooling mechanism. On the Stokes side we observe a substantial decrease of the phonon peak intensities which we relate to the dynamics of the optically induced exciton population. The exciton population shows a multi-exponential relaxation on the hundreds of ps time scale and is independent of the excitation intensity, indicating that exciton-exciton annihilation processes are not important and the exsistence of dark and trapped exciton states. Our results shed light on the optically induced phonon and exciton dynamics in surface aligned armchair graphene nanoribbons and demonstrate that time-resolved spontaneous Raman scattering spectroscopy is a powerful method for exploring quasi-particle dynamics in low dimensional materials.

Exciton Self-Trapping in sp2 Carbon Nanostructures Induced by Edge Ether Groups

Recent experiments have suggested that exciton self-trapping plays an important role in governing the optical properties of graphene quantum dots (GQDs) and carbon dots (CDs), while the molecular structures related to this phenomenon remain unclear. This theoretical study reports exciton self-trapping induced by edge-bonded ether (C-O-C) groups in graphene nanosheets. Density functional theory (DFT) and time-dependent DFT calculations show that the initially delocalized electron and hole are trapped in the vicinity of the edge ether groups on graphene nanosheets upon excited-state (S1) relaxation, accompanied by structural planarization of the seven-membered cyclic ether rings in the same region. The resulted significant structural deformation leads to large Stokes shift energies, which are comparable to the magnitudes of the notably large emission shift observed in experiments. This study provides a feasible explanation of the origin of exciton self-trapping and offers guidance for experiments to investigate and engineer exciton self-trapping in relevant materials.

Boron-Doped Graphene Nanoribbons: Electronic Structure and Raman Fingerprint

We investigate the electronic and vibrational properties of bottom-up synthesized aligned armchair graphene nanoribbons of N = 7 carbon atoms width periodically doped by substitutional boron atoms (B-7AGNRs). Using angle-resolved photoemission spectroscopy and density functional theory calculations, we find that the dopant-derived valence and conduction band states are notably hybridized with electronic states of Au substrate and spread in energy. The interaction with the substrate leaves the bands with pure carbon character rather unperturbed. This results in an identical effective mass of ≈0.2 m₀ for the next-highest valence band compared with pristine 7AGNRs. We probe the phonons of B-7AGNRs by ultrahigh-vacuum (UHV) Raman spectroscopy and reveal the existence of characteristic splitting and red shifts in Raman modes due to the presence of substitutional boron atoms. Comparing the Raman spectra for three visible lasers (red, green, and blue), we find that interaction with gold suppresses the Raman signal from B-7AGNRs and the energy of the green laser (2.33 eV) is closer to the resonant E₂₂ transition. The hybridized electronic structure of the B-7AGNR-Au interface is expected to improve electrical characteristics of contacts between graphene nanoribbon and Au. The Raman fingerprint allows the easy identification of B-7AGNRs, which is particularly useful for device fabrication.

Field-Effect Transistors Based on Networks of Highly Aligned, Chemically Synthesized N = 7 Armchair Graphene Nanoribbons

We report on the experimental demonstration and electrical characterization of N = 7 armchair graphene nanoribbon (7-AGNR) field effect transistors. The back-gated transistors are fabricated from atomically precise and highly aligned 7-AGNRs, synthesized with a bottom-up approach. The large area transfer process holds the promise of scalable device fabrication with atomically precise nanoribbons. The channels of the FETs are approximately 30 times longer than the average nanoribbon length of 30 nm to 40 nm. The density of the GNRs is high, so that transport can be assumed well-above the percolation threshold. The long channel transistors exhibit a maximum I_ON/ I_OFF current ratio of 87.5.

Bright Electroluminescence from Single Graphene Nanoribbon Junctions

Thanks to their highly tunable band gaps, graphene nanoribbons (GNRs) with atomically precise edges are emerging as mechanically and chemically robust candidates for nanoscale light emitting devices of modulable emission color. While their optical properties have been addressed theoretically in depth, only few experimental studies exist, limited to ensemble measurements and without any attempt to integrate them in an electronic-like circuit. Here we report on the electroluminescence of individual GNRs suspended between the tip of a scanning tunneling microscope (STM) and a Au(111) substrate, constituting thus a realistic optoelectronic circuit. Emission spectra of such GNR junctions reveal a bright and narrow band emission of red light, whose energy can be tuned with the bias voltage applied to the junction, but always lying below the gap of infinite GNRs. Comparison with ab initio calculations indicates that the emission involves electronic states localized at the GNR termini. Our results shed light on unpredicted optical transitions in GNRs and provide a promising route for the realization of bright, robust, and controllable graphene-based light-emitting devices.

Probing optical excitations in chevron-like armchair graphene nanoribbons

The bottom-up fabrication of graphene nanoribbons (GNRs) has opened new opportunities to specifically tune their electronic and optical properties by precisely controlling their atomic structure. Here, we address excitation in GNRs with periodic structural wiggles, the so-called chevron GNRs. Based on reflectance difference and high-resolution electron energy loss spectroscopies together with ab initio simulations, we demonstrate that their excited-state properties are of excitonic nature. The spectral fingerprints corresponding to different reaction stages in their bottom-up fabrication are also unequivocally identified, allowing us to follow the exciton build-up from the starting monomer precursor to the final GNR structure.