Area- and Thickness-Dependent Biexciton Auger Recombination in Colloidal CdSe Nanoplatelets: Breaking the "Universal Volume Scaling Law"

Charge Transfer from Quantum-Confined 0D, 1D, and 2D Nanocrystals

The properties of colloidal quantum-confined semiconductor nanocrystals (NCs), including zero-dimensional (0D) quantum dots, 1D nanorods, 2D nanoplatelets, and their heterostructures, can be tuned through their size, dimensionality, and material composition. In their photovoltaic and photocatalytic applications, a key step is to generate spatially separated and long-lived electrons and holes by interfacial charge transfer. These charge transfer properties have been extensively studied recently, which is the subject of this Review. The Review starts with a summary of the electronic structure and optical properties of 0D-2D nanocrystals, followed by the advances in wave function engineering, a novel way to control the spatial distribution of electrons and holes, through their size, dimension, and composition. It discusses the dependence of NC charge transfer on various parameters and the development of the Auger-assisted charge transfer model. Recent advances in understanding multiple exciton generation, decay, and dissociation are also discussed, with an emphasis on multiple carrier transfer. Finally, the applications of nanocrystal-based systems for photocatalysis are reviewed, focusing on the photodriven charge separation and recombination processes that dictate the function and performance of these materials. The Review ends with a summary and outlook of key remaining challenges and promising future directions in the field.

Monolayer-like Exciton Recombination Dynamics of Multilayer MoSe2 Observed by Pump-Probe Microscopy

Transition metal dichalcogenides (TMDCs) have garnered considerable interest over the past decade as a class of semiconducting layered materials. Most studies on the carrier dynamics in these materials have focused on the monolayer due to its direct bandgap, strong photoluminescence, and strongly bound excitons. However, a comparative understanding of the carrier dynamics in multilayer (e.g., >10 layers) flakes is still absent. Recent computational studies have suggested that excitons in bulk TMDCs are confined to individual layers, leading to room-temperature stable exciton populations. Using this new context, we explore the carrier dynamics in MoSe2 flakes that are between ∼16 and ∼125 layers thick. We assign the kinetics to exciton-exciton annihilation (EEA) and Shockley-Read-Hall recombination of free carriers. Interestingly, the average observed EEA rate constant (0.003 cm2/s) is nearly independent of flake thickness and 2 orders of magnitude smaller than that of an unencapsulated monolayer (0.33 cm2/s) but very similar to values observed in encapsulated monolayers. Thus, we posit that strong intralayer interactions minimize the effect of layer thickness on recombination dynamics, causing the multilayer to behave like the monolayer and exhibit an apparent EEA rate intrinsic to MoSe2.

Long-Lived and Bright Biexcitons in Quantum Dots with Parabolic Band Potentials

Multiple exciton physics in semiconductor nanocrystals play an important role in optoelectronic devices. This work investigates radially alloyed CdZnSe/CdS nanocrystals with suppressed Auger recombination due to the spatial separation of carriers, which also underpins their performance in optical gain and scintillation experiments. Due to suppressed Auger recombination, the biexciton lifetime is greater than 10 ns, much longer than most nanocrystals. The samples show optical gain, amplified spontaneous emission, and lasing at thresholds <2 excitons per particle. They also show broad gain bandwidth (>500 meV) encompassing 4 amplified spontaneous emission bands. Similarly enabled by slowed multiple exciton relaxation, the samples display strong performance in scintillating films under X-ray illumination. The CdZnSe/CdS samples have fast radioluminescence rise (<80 ps) and decay times (<5 ns), light yields up to 6700 photons·MeV-1, and the demonstrated capacity for incorporation into large area films for scintillation imaging.

Gain enhancement of perovskite nanosheets by a patterned waveguide: excitation and temperature dependence of gain saturation

Optical gain enhancement of two-dimensional CsPbBr3 nanosheets was studied when the amplified spontaneous emission is guided by a patterned structure of polyurethane-acrylate. Given the uncertainties and pitfalls in retrieving a gain coefficient from the variable stripe length method, a gain contour [Formula: see text] was obtained in the plane of spectrum energy (ℏω) and stripe length (x), whereby an average gain was obtained, and gain saturation was analysed. Excitation and temperature dependence of the gain contour show that the waveguide enhances both gain and thermal stability due to the increased optical confinement and heat dissipation, and the gain origins were attributed to the two-dimensional excitons and the localized states.

Slow Auger Recombination in Ag2Se Colloidal Quantum Dots

Efficient Auger recombination (AR) presents a significant challenge for the advancement of colloidal quantum dot (QD)-based devices involving multiexcitons. Here, the AR dynamics of near-infrared Ag2Se QDs were studied through transient absorption experiments. As the QD radius increases from 0.9 to 2.5 nm, the biexciton lifetime (τ2) of Ag2Se QDs increases from 35 to 736 ps, which is approximately 10 times longer than that of comparable-sized CdSe and PbSe QDs. A qualitative analysis based on observables indicates that the slow Auger rate is primarily attributed to the low density of the final states. The biexciton lifetime and triexciton lifetime (τ3) of Ag2Se QDs follow R3 and R2.6 dependence, respectively. Moreover, the ratio of τ2/τ3 is ∼2.3-3.2, which is markedly lower than the value expected from statistical scaling (4.5). These findings suggest that environmentally friendly Ag2Se QDs can serve as excellent candidates for low-threshold lasers and third-generation photovoltaics utilizing carrier multiplication.

Expanding the color palette of bicolor-emitting nanocrystals

Owing to their bright and tunable luminescence spectra, nanocrystals appear as a unique playground for light source design. Displays and lighting require white light sources that combine several narrow lines. As Kasha's rule prevents the emission of hot carriers, blends of multiple nanocrystal populations are currently the obvious strategy for broad-band source design. However, a few reports suggest that bicolor emission can also be obtained from a single particle even under weak excitation if a careful design of the exciton scattering mechanism sufficiently slows down its relaxation pathways. A key challenge remains to maintain quantum confinement for color tunability in the same structure, while simultaneously achieving a large size to leverage the critical, slower exciton diffusion or relaxation down to the ground state. Herein, we demonstrate that 2D nanoplatelets offer an original opportunity for the design of confined and large heterostructures. We demonstrate that bicolor emission is not limited to green-red pair and show that blue-yellow and purple-green emissions can be obtained from CdSe/CdTe/CdSe core/crown/crown and CdSe/CdS core/crown heterostructures, respectively.

Lateral surface passivation of CdSe nanoplatelets through crown management

Two-dimensional colloidal CdSe nanoplatelets (NPLs) have been considered as ideal emitting materials for high performance light-emitting devices due to their excellent optical properties. However, the understanding of defect related radiative and nonradiative recombination centers in CdSe NPLs is still far from sufficient, especially their physical distribution locations. In this work, CdSe core and CdSe/CdS core/crown NPLs have been successfully synthesized and their optical properties have been characterized by laser spectroscopies. It is found that the photoluminescence quantum yield of CdSe NPLs is improved by a factor of 4 after the growth of the CdS crown. At low temperatures, the change in the ratio of low and high energy emission intensities from NPLs suggests that the radiative recombination centers are mainly located on the lateral surface of the samples. This finding is further confirmed by the surface passivation experiment. Meanwhile, the nonradiative recombination centers of NPLs located on the lateral surface are also confirmed by ligand exchange. These results demonstrate the importance of understanding the optical properties of the lateral surface of NPLs, which are important for the design of material structures for optoelectronic applications.

Auger effect in weakly confined nanocrystals

An extensive analysis of biexciton luminescence in high-quality, large perovskite CsPbBr₃ nanocrystals shows how the biexciton Auger decay rate deviates from the "universal" volume scaling as the exciton confinement becomes weaker.

Luminescence Dynamics of Single Self-Assembled Chains of Förster (FRET)-Coupled CdSe Nanoplatelets

Self-assembled linear chains of CdSe nanoplatelets are known to exhibit highly efficient Förster resonant energy transfer (FRET) leading to fast exciton diffusion between platelets. Here, we compare the luminescence decay dynamics of single nanoplatelets, clusters of a few platelets, and self-assembled chains. As the number of stacked platelets is increased, we show that the luminescence decay becomes faster, which can be interpreted as the FRET-mediated effect of quenchers: excitons may diffuse to nearby quenchers so that their decay rate is increased. On the other hand, a minor slow decay component is also observed for single platelets, corresponding to trapping-detrapping mechanisms in nearby trap states. The contribution of the slow component is enhanced for the platelet chains. This is consistent with a FRET-mediated trapping mechanism where the excitons would diffuse from platelet to platelet until they reach a trap state. Finally, we develop toy models for the FRET-mediated quenching and trapping effects on the decay curves and analyze the relevant parameters.

Colloidal Semiconductor Nanocrystal Lasers and Laser Diodes

Lasers and optical amplifiers based on solution-processable materials have been long-desired devices for their compatibility with virtually any substrate, scalability, and ease of integration with on-chip photonics and electronics. These devices have been pursued across a wide range of materials including polymers, small molecules, perovskites, and chemically prepared colloidal semiconductor nanocrystals, also commonly referred to as colloidal quantum dots. The latter materials are especially attractive for implementing optical-gain media as in addition to being compatible with inexpensive and easily scalable chemical techniques, they offer multiple advantages derived from a zero-dimensional character of their electronic states. These include a size-tunable emission wavelength, low optical gain thresholds, and weak sensitivity of lasing characteristics to variations in temperature. Here we review the status of colloidal nanocrystal lasing devices, most recent advances in this field, outstanding challenges, and the ongoing progress toward technological viable devices including colloidal quantum dot laser diodes.

Resolving the Emission Transition Dipole Moments of Single Doubly Excited Seeded Nanorods via Heralded Defocused Imaging

Semiconductor nanocrystal emission polarization is a crucial probe of nanocrystal physics and an essential factor for nanocrystal-based technologies. While the transition dipole moment for the lowest excited state to ground state transition is well characterized, the dipole moment of higher multiexcitonic transitions is inaccessible via most spectroscopy techniques. Here, we realize direct characterization of the doubly excited-state relaxation transition dipole by heralded defocused imaging. Defocused imaging maps the dipole emission pattern onto a fast single-photon avalanche diode detector array, allowing the postselection of photon pairs emitted from the biexciton-exciton emission cascade and resolving the differences in transition dipole moments. Type-I¹/₂ seeded nanorods exhibit higher anisotropy of the biexciton-to-exciton transition compared to the exciton-to-ground state transition. In contrast, type-II seeded nanorods display a reduction of biexciton emission anisotropy. These findings are rationalized in terms of an interplay between the transient dynamics of the refractive index and the excitonic fine structure.

Electronic Structure and Excited State Dynamics of Cadmium Chalcogenide Nanorods

The cylindrical quasi-one-dimensional shape of colloidal semiconductor nanorods (NRs) gives them unique electronic structure and optical properties. In addition to the band gap tunability common to nanocrystals, NRs have polarized light absorption and emission and high molar absorptivities. NR-shaped heterostructures feature control of electron and hole locations as well as light emission energy and efficiency. We comprehensively review the electronic structure and optical properties of Cd-chalcogenide NRs and NR heterostructures (e.g., CdSe/CdS dot-in-rods, CdSe/ZnS rod-in-rods), which have been widely investigated over the last two decades due in part to promising optoelectronic applications. We start by describing methods for synthesizing these colloidal NRs. We then detail the electronic structure of single-component and heterostructure NRs and follow with a discussion of light absorption and emission in these materials. Next, we describe the excited state dynamics of these NRs, including carrier cooling, carrier and exciton migration, radiative and nonradiative recombination, multiexciton generation and dynamics, and processes that involve trapped carriers. Finally, we describe charge transfer from photoexcited NRs and connect the dynamics of these processes with light-driven chemistry. We end with an outlook that highlights some of the outstanding questions about the excited state properties of Cd-chalcogenide NRs.

Effects of Pump Photon Energy on Generation and Ultrafast Relaxation of Excitons and Charge Carriers in CdSe Nanoplatelets

We studied the initial nature and relaxation of photoexcited electronic states in CdSe nanoplatelets (NPLs). Ultrafast transient optical absorption (TA) measurements were combined with the theoretical analysis of the formation and decay of excitons, biexcitons, free charge carriers, and trions. In the latter, photons and excitons were treated as bosons and free charge carriers as fermions. The initial quantum yields of heavy-hole (HH) excitons, light-hole (LH) excitons, and charge carriers vary strongly with photon energy, while thermal relaxation occurs always within 1 ps. After that, the population of LH excitons is negligible due to relaxation to HH excitons or decay into free electrons and holes. Up to the highest average number of about four absorbed photons per NPL in our experiments, we found no signatures of the presence of biexcitons or larger complexes. Biexcitons were only observed due to the interaction of a probe-generated exciton with an exciton produced previously by the pump pulse. For higher pump photon energies, the initial presence of more free charge carriers leads to formation of trions by probe photons. On increasing the number of absorbed pump photons in an NPL, the yield of excitons becomes higher as compared to free charge carriers, since electron-hole recombination becomes more likely. In addition to a TA absorption feature at energy below the HH exciton peak, we also observed a TA signal at the high-energy side of this peak, which we attribute to formation of LH-HH biexcitons or trions consisting of a charge and LH exciton.

2D II-VI Semiconductor Nanoplatelets: From Material Synthesis to Optoelectronic Integration

The field of colloidal synthesis of semiconductors emerged 40 years ago and has reached a certain level of maturity thanks to the use of nanocrystals as phosphors in commercial displays. In particular, II-VI semiconductors based on cadmium, zinc, or mercury chalcogenides can now be synthesized with tailored shapes, composition by alloying, and even as nanocrystal heterostructures. Fifteen years ago, II-VI semiconductor nanoplatelets injected new ideas into this field. Indeed, despite the emergence of other promising semiconductors such as halide perovskites or 2D transition metal dichalcogenides, colloidal II-VI semiconductor nanoplatelets remain among the narrowest room-temperature emitters that can be synthesized over a wide spectral range, and they exhibit good material stability over time. Such nanoplatelets are scientifically and technologically interesting because they exhibit optical features and production advantages at the intersection of those expected from colloidal quantum dots and epitaxial quantum wells. In organic solvents, gram-scale syntheses can produce nanoparticles with the same thicknesses and optical properties without inhomogeneous broadening. In such nanoplatelets, quantum confinement is limited to one dimension, defined at the atomic scale, which allows them to be treated as quantum wells. In this review, we discuss the synthetic developments, spectroscopic properties, and applications of such nanoplatelets. Covering growth mechanisms, we explain how a thorough understanding of nanoplatelet growth has enabled the development of nanoplatelets and heterostructured nanoplatelets with multiple emission colors, spatially localized excitations, narrow emission, and high quantum yields over a wide spectral range. Moreover, nanoplatelets, with their large lateral extension and their thin short axis and low dielectric surroundings, can support one or several electron-hole pairs with large exciton binding energies. Thus, we also discuss how the relaxation processes and lifetime of the carriers and excitons are modified in nanoplatelets compared to both spherical quantum dots and epitaxial quantum wells. Finally, we explore how nanoplatelets, with their strong and narrow emission, can be considered as ideal candidates for pure-color light emitting diodes (LEDs), strong gain media for lasers, or for use in luminescent light concentrators.

Atomically flat semiconductor nanoplatelets for light-emitting applications

The last decade has witnessed extensive breakthroughs and significant progress in atomically flat two-dimensional (2D) semiconductor nanoplatelets (NPLs) in terms of synthesis, growth mechanisms, optical and electronic properties and practical applications. Such NPLs have electronic structures similar to those of quantum wells in which excitons are predominantly confined along the vertical direction, while electrons are free to move in the lateral directions, resulting in unique optical properties, such as extremely narrow emission line width, short photoluminescence (PL) lifetime, high gain coefficient, and giant oscillator strength transition (GOST). These unique optical properties make NPLs favorable for high color purity light-emitting applications, in particular in light-emitting diodes (LEDs), backlights for liquid crystal displays (LCDs) and lasers. This review article first introduces the intrinsic characteristics of 2D semiconductor NPLs with atomic flatness. Subsequently, the approaches and mechanisms for the controlled synthesis of atomically flat NPLs are summarized followed by an insight on recent progress in the mediation of core/shell, core/crown and core/crown@shell structures by selective epitaxial growth of passivation layers on different planes of NPLs. Moreover, an overview of the unique optical properties and the associated light-emitting applications is elaborated. Despite great progress in this research field, there are some issues relating to heavy metal elements such as Cd²⁺ in NPLs, and the ambiguous gain mechanisms of NPLs and others are the main obstacles that prevent NPLs from widespread applications. Therefore, a perspective is included at the end of this review article, in which the current challenges in this stimulating research field are discussed and possible solutions to tackle these challenges are proposed.

Optical and Scintillation Properties of Record-Efficiency CdTe Nanoplatelets toward Radiation Detection Applications

Colloidal CdTe nanoplatelets featuring a large absorption coefficient and ultrafast tunable luminescence coupled with heavy-metal-based composition present themselves as highly desirable candidates for radiation detection technologies. Historically, however, these nanoplatelets have suffered from poor emission efficiency, hindering progress in exploring their technological potential. Here, we report the synthesis of CdTe nanoplatelets possessing a record emission efficiency of 9%. This enables us to investigate their fundamental photophysics using ultrafast transient absorption, temperature-controlled photoluminescence, and radioluminescence measurements, elucidating the origins of exciton- and defect-related phenomena under both optical and ionizing excitation. For the first time in CdTe nanoplatelets, we report the cumulative effects of a giant oscillator strength transition and exciton fine structure. Simultaneously, thermally stimulated luminescence measurements reveal the presence of both shallow and deep trap states and allow us to disclose the trapping and detrapping dynamics and their influence on the scintillation properties.

Acceleration of Biexciton Radiative Recombination at Low Temperature in CdSe Nanoplatelets

Colloidal semiconductor nanocrystals offer bandgap tunability, high photoluminescence quantum yield, and colloidal processing of benefit to optoelectronics, however rapid nonradiative Auger recombination (AR) deleteriously affects device efficiencies at elevated excitation intensities. AR is understood to transition from temperature-dependent behavior in bulk semiconductors to temperature-independent behavior in zero-dimensional quantum dots (QDs) as a result of discretized band structure that facilitates satisfaction of linear momentum conservation. For nanoplatelets (NPLs), two-dimensional morphology renders prediction of photophysical behaviors challenging. Here, we investigate and compare the temperature dependence of excited-stated lifetime and fluence-dependent emission of CdSe NPLs and QDs. For NPLs, upon temperature reduction, biexciton lifetime surprisingly decreases (even becoming shorter lived than trion emission) and emission intensity increases nearly linearly with fluence rather than saturating, consistent with dominance of radiative recombination rather than AR. CdSe NPLs thus differ fundamentally from core-only QDs and foster increased utility of photogenerated excitons and multiexcitons at low temperatures.

Simulations of nonradiative processes in semiconductor nanocrystals

The description of carrier dynamics in spatially confined semiconductor nanocrystals (NCs), which have enhanced electron-hole and exciton-phonon interactions, is a great challenge for modern computational science. These NCs typically contain thousands of atoms and tens of thousands of valence electrons with discrete spectra at low excitation energies, similar to atoms and molecules, that converge to the continuum bulk limit at higher energies. Computational methods developed for molecules are limited to very small nanoclusters, and methods for bulk systems with periodic boundary conditions are not suitable due to the lack of translational symmetry in NCs. This perspective focuses on our recent efforts in developing a unified atomistic model based on the semiempirical pseudopotential approach, which is parameterized by first-principle calculations and validated against experimental measurements, to describe two of the main nonradiative relaxation processes of quantum confined excitons: exciton cooling and Auger recombination. We focus on the description of both electron-hole and exciton-phonon interactions in our approach and discuss the role of size, shape, and interfacing on the electronic properties and dynamics for II-VI and III-V semiconductor NCs.

Biexcitons in CdSe nanoplatelets: geometry, binding energy and radiative rate

Biexciton properties in semiconductor nanostructures are highly sensitive to quantum confinement, relative electron-hole masses, dielectric environment and Coulomb correlations. Here we present a variational Quantum Monte Carlo model which, coupled to effective mass Hamiltonians, takes into account all of the above effects. The model is used to provide theoretical assessment on the biexciton ground state properties in colloidal CdSe nanoplatelets. A number of characteristic features is observed: (i) the finite thickness of these systems makes the biexciton geometry depart from the planar square expected in the two-dimensional (2D) limit, and form a distorted tetrahedron instead; (ii) the strong dielectric confinement enhances not only Coulomb attractions but also repulsions, which lowers the ratio of the biexciton-to-exciton binding energy down to EXXb/EXb = 0.07. (iii) EXXb is less sensitive than EXb to lateral confinement, and yet it can reach values above 30 meV, thus granting room temperature stability; (iv) the ratio of biexciton-to-exciton radiative rates, kradXX/kradX, decreases from 3.5 to ∼1 as the platelet area increases. These results pave the way for the rational design of biexciton properties in metal chalcogenide nanoplatelets.

Gain roll-off in cadmium selenide colloidal quantum wells under intense optical excitation

Colloidal quantum wells, or nanoplatelets, show among the lowest thresholds for amplified spontaneous emission and lasing among solution-cast materials and among the highest modal gains of any known materials. Using solution measurements of colloidal quantum wells, this work shows that under photoexcitation, optical gain increases with pump fluence before rolling off due to broad photoinduced absorption at energies lower than the band gap. Despite the common occurrence of gain induced by an electron–hole plasma found in bulk materials and epitaxial quantum wells, under no measurement conditions was the excitonic absorption of the colloidal quantum wells extinguished and gain arising from a plasma observed. Instead, like gain, excitonic absorption reaches a minimum intensity near a photoinduced carrier sheet density of 2 × 10¹³ cm⁻² above which the absorption peak begins to recover. To understand the origins of these saturation and reversal effects, measurements were performed with different excitation energies, which deposit differing amounts of excess energy above the band gap. Across many samples, it was consistently observed that less energetic excitation results in stronger excitonic bleaching and gain for a given carrier density. Transient and static optical measurements at elevated temperatures, as well as transient X-ray diffraction of the samples, suggest that the origin of gain saturation and reversal is a heating and disordering of the colloidal quantum wells which produces sub-gap photoinduced absorption.

Suppressed Blinking and Polarization-Dependent Emission Enhancement of Single ZnCdSe/ZnS Dot Coupled with Au Nanorods

Fluorescent quantum dots (QDs) have attracted extensive attention because of their promising applications in many fields such as quantum optics, optoelectronics, solid-state lighting, and bioimaging. However, photo-blinking, low emission efficiency, and instability are the drawbacks of fluorescent QD-based devices, affecting their optical properties and practical applications. Here, we report suppressed blinking, enhanced radiative rate, and polarization-dependent emission properties of single ZnCdSe/ZnS QDs assembled on the surface of Au nanorods (NRs). We found that the local surface plasmon (LSP) of Au NRs significantly regulates the excitation and emission properties of the composite ZnCdSe/ZnS QD-Au NRs (QD-Au NRs). The average number of photons emitted per unit time from single QD-Au NRs has been significantly enhanced compared with that of single ZnCdSe/ZnS QDs on the coverslip, accompanied by a drastically shortened lifetime and suppressed blinking. According to the experimental and simulation analysis, the photogenerated LSP field of Au NRs remarkably increases the excitation transition and the radiative rates of QD-Au NRs. Although the emission efficiency is slightly increased, the synergetic enhancement of excitation and radiative rates sufficiently competes with the nonradiative process to compensate for the low emission efficiency of QDs and ultimately suppress the photo-blinking of QD-Au NRs. Moreover, the polarization-dependent emission enhancement has also been observed and theoretically analyzed, demonstrating good consistency and confirming the contribution of excitation enhancement. Our findings present a practical strategy to improve the optical properties and stability of single QD-Au NR composite and provide essential information for a deep understanding of the interaction between emitters and the LSP field of metal nanoparticles.

Broadband Optical Phase Modulation by Colloidal CdSe Quantum Wells

Two-dimensional (2D) semiconductors are primed to realize a variety of photonic devices that rely on the transient properties of photogenerated charges, yet little is known on the change of the refractive index. The associated optical phase changes can be beneficial or undesired depending on the application, but require proper quantification. Measuring optical phase modulation of dilute 2D materials is, however, not trivial with common methods. Here, we demonstrate that 2D colloidal CdSe quantum wells, a useful model system, can modulate the phase of light across a broad spectrum using a femtosecond interferometry method. Next, we develop a toolbox to calculate the time-dependent refractive index of colloidal 2D materials from widely available transient absorption experiments using a modified effective medium algorithm. Our results show that the excitonic features of 2D materials result in broadband, ultrafast, and sizable phase modulation, even extending to the near infrared because of intraband transitions.

Stimulated Emission through an Electron-Hole Plasma in Colloidal CdSe Quantum Rings

Colloidal CdSe quantum rings (QRs) are a recently developed class of nanomaterials with a unique topology. In nanocrystals with more common shapes, such as dots and platelets, the photophysics is consistently dominated by strongly bound electron-hole pairs, so-called excitons, regardless of the charge carrier density. Here, we show that charge carriers in QRs condense into a hot uncorrelated plasma state at high density. Through strong band gap renormalization, this plasma state is able to produce broadband and sizable optical gain. The gain is limited by a second-order, yet radiative, recombination process, and the buildup is counteracted by a charge-cooling bottleneck. Our results show that weakly confined QRs offer a unique system to study uncorrelated electron-hole dynamics in nanoscale materials.

Origin of Low Temperature Trion Emission in CdSe Nanoplatelets

Colloidal semiconductor nanoplatelets (NPLs) are a scalable materials platform for optoelectronic applications requiring fast and narrow emission, including spin-to-photon transduction within quantum information networks. In particular, three-particle negative trions of NPLs are appealing emitters since, unlike excitons, they do not have an optically "dark" sublevel. In CdSe NPLs, trion emission dominates the photoluminescence (PL) spectrum at low temperature but using them as single photon-emitting states requires more knowledge about their preparation, since trions in these materials are not directly optically accessible from the ground state. This work demonstrates, using power-dependent time-resolved transient absorptions (TA) of CdSe NPLs, that trions form via biexciton decay in 1.6 ps. The scaling of the trion population and formation lifetime with excitation power indicates that they do not form through collisional mechanisms typical for 2D materials, but rather by a unimolecular hole transfer. This work is a step toward deterministic single photon emission from trions.

Slow Auger Recombination of Trapped Excitons Enables Efficient Multiple Electron Transfer in CdS-Pt Nanorod Heterostructures

Solar-to-fuel conversion reaction often requires multiple proton-coupled electron transfer (PCET) processes powered by the energetic electrons and/or holes generated by the absorption of multiple photons. The effective coupling of multiple electron transfer from the light absorber with the multiple PCET reactions at the catalytic center is one of the key challenges in efficient and selective conversion of solar energy to chemical fuels. In this paper, we examine the dynamics of multiple electron transfer in quantum confined CdS nanorods with a Pt tip, in which the CdS rod functions as the light absorber and the Pt tip the catalytic center. By excitation-fluence-dependent transient absorption spectroscopic measurements, we show that the multiexciton Auger recombination rate in CdS rods follows a carrier-collision model, k_n^A = n²(n - 1)/4k₂^A, with a biexciton lifetime (1/k₂^A) of 2.0 ± 0.2 ns. In CdS-Pt nanorods, electron transfer kinetics from the CdS conduction band edge to the Pt show negligible dependence on the excitation fluence, occurring with a half-life time of 5.6 ± 0.6 ps. The efficiency of multiple exciton dissociation by multiple electron transfer to Pt decreases from 100% in biexciton states to ∼41% at 22 exciton state due to the competition with Auger recombination. The half-lifetime of the n-charge separated state recombination (with n electrons in the Pt and n holes in the CdS) decreases from 10 μs in the single charge separated state to 42 ns in nine charge separated states. Our findings suggest the possibility of driving multielectron photocatalytic reactions under intense illumination and controlling product selectivity through multielectron transfer.

Increasing the Energy Gap between Band-Edge and Trap States Slows Down Picosecond Carrier Trapping in Highly Luminescent InP/ZnSe/ZnS Quantum Dots

Non-toxic InP-based nanocrystals have been developed for promising candidates for commercial optoelectronic applications and they still require further improvement on photophysical properties, compared to Cd-based quantum dots (QDs), for better device efficiency and long-term stability. It is, therefore, essential to understand the precise mechanism of carrier trapping even in the state-of-the-art InP-based QD with near-unity luminescence. Here, it is shown that using time-resolved spectroscopic measurements of systematically size-controlled InP/ZnSe/ZnS core/shell/shell QDs with the quantum yield close to one, carrier trapping decreases with increasing the energy difference between band-edge and trap states, indicating that the process follows the energy gap law, well known in molecular photochemistry for nonradiative internal conversion between two electronic states. Similar to the molecular view of the energy gap law, it is found that the energy gap between the band-edge and trap states is closely associated with ZnSe phonons that assist carrier trapping into defects in highly luminescent InP/ZnSe/ZnS QDs. These findings represent a striking departure from the generally accepted view of carrier trapping mechanism in QDs in the Marcus normal region, providing a step forward understanding how excitons in nanocrystals interact with traps, and offering valuable guidance for making highly efficient and stable InP-based QDs.

Multicolor Patterning of 2D Semiconductor Nanoplatelets

Nanocrystal micro/nanoarrays with multiplexed functionalities are of broad interest in the field of nanophotonics, cellular dynamics, and biosensing due to their tunable electrical and optical properties. This work focuses on the multicolor patterning of two-dimensional nanoplatelets (NPLs) via two sequential self-assembly and direct electron-beam lithography steps. By using scanning electron microscopy, atomic force microscopy, and fluorescence microscopy, we demonstrate the successful fabrication of fluorescent nanoarrays with a thickness of only two or three monolayers (7-11 nm) and a feature line width of ∼40 nm, which is three to four NPLs wide. To this end, first, large-area thin films of red-emitting CdSe/Zn_yCd_1-yS and green-emitting CdSe_1-xS_x/Zn_yCd_1-yS core/shell NPLs are fabricated based on Langmuir-type self-assembly at the liquid/air interface. By varying the concentration of ligands in the subphase, we investigate the effect of interaction potential on the film's final characteristics to prepare thin superlattices suitable for the patterning step. Equipped with the ability to fabricate a uniform superlattice with a controlled thickness, we next perform nanopatterning on a thin film of NPLs utilizing a direct electron-beam lithography (EBL) technique. The effect of acceleration voltage, aperture size, and e-beam dosage on the nanopattern's resolution and fidelity is investigated for both of the presented NPLs. After successfully optimizing EBL parameters to fabricate single-color nanopatterns, we finally focus on fabricating multicolor patterns. The obtained micro/nanoarrays provide us with an innovative experimental platform to investigate biological interactions as well as Förster resonance energy transfer.

Zone-Folded Longitudinal Acoustic Phonons Driving Self-Trapped State Emission in Colloidal CdSe Nanoplatelet Superlattices

Colloidal CdSe nanoplatelets (NPLs) have substantial potential in light-emitting applications because of their quantum-well-like characteristics. The self-trapped state (STS), originating from strong electron-phonon coupling (EPC), is promising in white light luminance because of its broadband emission. However, achieving STS in CdSe NPLs is extremely challenging because of their intrinsic weak EPC nature. Herein, we developed a strong STS emission in the spectral range of 450-600 nm by building superlattice (SL) structures with colloidal CdSe NPLs. We demonstrated that STS is generated via strong coupling of excitons and zone-folded longitudinal acoustic phonons with formation time of ∼450 fs and localization length of ∼0.56 nm. The Huang-Rhys factor, describing the EPC strength in SL structure, is estimated to be ∼19.9, which is much larger than that (∼0.1) of monodispersed CdSe NPLs. Our results provide an in-depth understanding of STS and a platform for generating and manipulating STS by designing SL structures.

Enhancing Dielectric Screening for Auger Suppression in CdSe/CdS Quantum Dots by Epitaxial Growth of ZnS Shell

Auger recombination is the main nonradiative process in multicarrier states of high-quality quantum dots (QDs). For the most-studied CdSe/CdS core/shell QDs, we effectively reduce the biexciton Auger rate by enhancing dielectric screening of band-edge carriers via epitaxial growth of additional ZnS shells. Super volume scaling of negative-trion Auger lifetime for CdSe/CdS core/shell QDs is achieved with the outermost ZnS shells. The volume of CdSe/CdS/ZnS QDs can be less than half that of CdSe/CdS QDs with the same negative-trion Auger lifetime. Auger suppression by the ZnS shells is more pronounced for QDs with wave functions of band-edge carriers spreading close to the inorganic-organic interface, such as CdSe/CdS QDs with small cores. A maximum drop of biexciton Auger rate of ∼50% and a maximum enhancement of biexciton emission quantum yield of 75% are achieved. Auger engineering by dielectric screening opens up new opportunities to improve the emission properties of multicarrier states in QDs.

Influence of Shape Anisotropy on the Emission of Low-Dimensional Semiconductors

The emergence of precise and scalable synthetic methods for producing anisotropic semiconductor nanostructures provides opportunities to tune the photophysical properties of these particles beyond their band gaps, and to incorporate them into higher-order structures with macroscopic anisotropic responses to electric and optical fields. This perspective article discusses some of these opportunities in the context of colloidal semiconductor nanoplatelets, with a focus on the influence of confinement anisotropy on processes that dictate the emission.

Anisotropic Transient Disordering of Colloidal, Two-Dimensional CdSe Nanoplatelets upon Optical Excitation

Nanoplatelets (NPLs)-colloidally synthesized, spatially anisotropic, two-dimensional semiconductor quantum wells-are of intense interest owing to exceptionally narrow transition line widths, coupled with solution processability and bandgap tunability. However, given large surface areas and undercoordinated bonding at facet corners and edges, excitation under sufficient intensities may induce anisotropic structural instabilities that impact desired properties. We employ time-resolved X-ray diffraction to study the crystal structure of CdSe NPLs in response to optical excitation. Photoexcitation induces greater out-of-plane than in-plane disordering in 4 and 5 monolayer (ML) NPLs, while 3 ML NPLs display the opposite behavior. Recovery dynamics suggest that out-of-plane cooling slightly outpaces in-plane cooling in 5 ML NPLs with recrystallization occurring on indistinguishable time scales. In comparison, for zero-dimensional CdSe nanocrystals, disordering is isotropic and recovery is faster. These results favor the use of NPLs in optoelectronic applications, where they are likely to exhibit superior performance over traditional, zero-dimensional nanocrystals.

Complex diffusion-based kinetics of photoluminescence in semiconductor nanoplatelets

We present a diffusion-based simulation and theoretical models for explanation of the photoluminescence (PL) emission intensity in semiconductor nanoplatelets. It is shown that the shape of the PL intensity curves can be reproduced by the interplay of recombination, diffusion and trapping of excitons. The emission intensity at short times is purely exponential and is defined by recombination. At long times, it is governed by the release of excitons from surface traps and is characterized by a power-law tail. We show that the crossover from one limit to another is controlled by diffusion properties. This intermediate region exhibits a rich behaviour depending on the value of diffusivity. The proposed approach reproduces all the features of experimental curves measured for different nanoplatelet systems.

Temperature Dependence of Excitonic and Biexcitonic Decay Rates in Colloidal Nanoplatelets by Time-Gated Photon Correlation

Excitons in colloidal semiconductor nanoplatelets (NPLs) are weakly confined in the lateral dimensions. This results in significantly smaller Auger rates and, consequently, larger biexciton quantum yields, when compared to spherical quantum dots (QDs). Here we report a study of the temperature dependence of the biexciton Auger rate in individual CdSe/CdS core-shell NPLs, through the measurement of time-gated second-order photon correlations in the photoluminescence. We also utilize this method to directly estimate the single-exciton radiative rate. We find that whereas the radiative lifetime of NPLs increases with temperature, the Auger lifetime is almost temperature-independent. Our findings suggest that Auger recombination in NPLs is qualitatively similar to that of semiconductor quantum wells. Time-gated photon correlation measurements offer the unique ability to study multiphoton emission events, while excluding effects of competing fast processes, and can provide significant insight into the photophysics of a variety of nanocrystal multiphoton emitters.

How Exciton and Single Carriers Block the Excitonic Transition in Two-Dimensional Cadmium Chalcogenide Nanoplatelets

Cadmium chalcogenide nanoplatelets (NPLs) possess unique properties and have shown great potential in lasing, light-emitting diodes, and photocatalytic applications. However, the exact natures of the band-edge exciton and single carrier (electron and hole) states remain unclear, even though they affect the key properties and applications of these materials. Herein, we study the contribution of a single carrier (electron or hole) state to phase space filling of single exciton states of cadmium chalcogenide NPLs. With pump fluence dependent TA study and selective electron removal, we determine that a single electron and hole states contribute 85% and 12%, respectively, to the blocking of the excitonic transition in CdSe/ZnS core/shell NPLs. These observations can be rationalized by a model of band-edge exciton and single carrier states of 2D NPLs that differs significantly from that of quantum dots.

Area and thickness dependence of Auger recombination in nanoplatelets

The ability to control both the thickness and the lateral dimensions of colloidal nanoplatelets offers a test-bed for area and thickness dependent properties in 2D materials. An important example is Auger recombination, which is typically the dominant process by which multiexcitons decay in nanoplatelets. Herein, we uncover fundamental properties of biexciton decay in nanoplatelets by comparing the Auger recombination lifetimes based on interacting and noninteracting formalisms with measurements based on transient absorption spectroscopy. Specifically, we report that electron-hole correlations in the initial biexcitonic state must be included in order to obtain Auger recombination lifetimes in agreement with experimental measurements and that Auger recombination lifetimes depend nearly linearly on the lateral area and somewhat more strongly on the thickness of the nanoplatelet. We also connect these scalings to those of the area and thickness dependencies of single exciton radiative recombination lifetimes, exciton coherence areas, and exciton Bohr radii in these quasi-2D materials.

Sub-single exciton optical gain threshold in colloidal semiconductor quantum wells with gradient alloy shelling

Colloidal semiconductor quantum wells have emerged as a promising material platform for use in solution-processable lasers. However, applications relying on their optical gain suffer from nonradiative Auger decay due to multi-excitonic nature of light amplification in II-VI semiconductor nanocrystals. Here, we show sub-single exciton level of optical gain threshold in specially engineered CdSe/CdS@CdZnS core/crown@gradient-alloyed shell quantum wells. This sub-single exciton ensemble-averaged gain threshold of (Ng)≈ 0.84 (per particle) resulting from impeded Auger recombination, along with a large absorption cross-section of quantum wells, enables us to observe the amplified spontaneous emission starting at an ultralow pump fluence of ~ 800 nJ cm-2, at least three-folds better than previously reported values among all colloidal nanocrystals. Finally, using these gradient shelled quantum wells, we demonstrate a vertical cavity surface-emitting laser operating at a low lasing threshold of 7.5 μJ cm-2. These results represent a significant step towards the realization of solution-processable electrically-driven colloidal lasers.

Auger Recombination Lifetime Scaling for Type I and Quasi-Type II Core/Shell Quantum Dots

Having already achieved near-unity quantum yields, with promising properties for light-emitting diode, lasing, and charge separation applications, colloidal core/shell quantum dots have great technological potential. The shell thickness and band alignment of the shell and core materials are known to influence the efficiency of these devices. In many such applications, improving the efficiency requires a deep understanding of multiexcitonic states. Herein, we elucidate the shell thickness and band alignment dependencies of the biexciton Auger recombination lifetime for quasi-type II CdSe/CdS and type I CdSe/ZnS core/shell quantum dots. We find that the biexciton Auger recombination lifetime increases with the total nanocrystal volume for quasi-type II CdSe/CdS core/shell quantum dots and is independent of the shell thickness for type I CdSe/ZnS core/shell quantum dots. To perform these calculations and compute Auger recombination lifetimes, we developed a low-scaling approach based on the stochastic resolution of identity. The numerical approach provided a framework for studying the scaling of the biexciton Auger recombination lifetimes in terms of the shell thickness dependencies of the exciton radii, Coulomb couplings, and density of final states in quasi-type II CdSe/CdS and type I CdSe/ZnS core/shell quantum dots.

Thickness-Dependence of Exciton-Exciton Annihilation in Halide Perovskite Nanoplatelets

Exciton-exciton annihilation (EEA) and Auger recombination are detrimental processes occurring in semiconductor optoelectronic devices at high carrier densities. Despite constituting one of the main obstacles for realizing lasing in semiconductor nanocrystals (NCs), the dependencies on NC size are not fully understood, especially for those with both weakly and strongly confined dimensions. Here, we use differential transmission spectroscopy to investigate the dependence of EEA on the physical dimensions of thickness-controlled 2D halide perovskite nanoplatelets (NPls). We find the EEA lifetimes to be extremely short on the order of 7-60 ps. Moreover, they are strongly determined by the NPl thickness with a power law dependence according to τ₂ ∝ d^5.3. Additional measurements show that the EEA lifetimes also increase for NPls with larger lateral dimensions. These results show that a precise control of the physical dimensions is critical for deciphering the fundamental laws governing the process especially in 1D and 2D NCs.

Surface passivation extends single and biexciton lifetimes of InP quantum dots

Indium phosphide quantum dots (InP QDs) are nontoxic nanomaterials with potential applications in photocatalytic and optoelectronic fields. Post-synthetic treatments of InP QDs are known to be essential for improving their photoluminescence quantum efficiencies (PLQEs) and device performances, but the mechanisms remain poorly understood. Herein, by applying ultrafast transient absorption and photoluminescence spectroscopies, we systematically investigate the dynamics of photogenerated carriers in InP QDs and how they are affected by two common passivation methods: HF treatment and the growth of a heterostructure shell (ZnS in this study). The HF treatment is found to improve the PLQE up to 16-20% by removing an intrinsic fast hole trapping channel (τ h,non = 3.4 ± 1 ns) in the untreated InP QDs while having little effect on the band-edge electron decay dynamics (τ e = 26-32 ns). The growth of the ZnS shell, on the other hand, is shown to improve the PLQE up to 35-40% by passivating both electron and hole traps in InP QDs, resulting in both a long-lived band-edge electron (τ e > 120 ns) and slower hole trapping lifetime (τ h,non > 45 ns). Furthermore, both the untreated and the HF-treated InP QDs have short biexciton lifetimes (τ xx ∼ 1.2 ± 0.2 ps). The growth of an ultra-thin ZnS shell (∼0.2 nm), on the other hand, can significantly extend the biexciton lifetime of InP QDs to 20 ± 2 ps, making it a passivation scheme that can improve both the single and multiple exciton lifetimes. Based on these results, we discuss the possible trap-assisted Auger processes in InP QDs, highlighting the particular importance of trap passivation for reducing the Auger recombination loss in InP QDs.

Nanoplatelet-Based Light-Emitting Diode and Its Use in All-Nanocrystal LiFi-like Communication

Now that colloidal nanocrystals (NCs) have been integrated as green and red sources for liquid crystal displays, the next challenge for quantum dots is their use in electrically driven light-emitting diodes (LEDs). Among various colloidal NCs, nanoplatelets (NPLs) have appeared as promising candidates for light-emitting devices because their two-dimensional shape allows a narrow luminescence spectrum, directional emission, and high light extraction. To reach high quantum efficiency, it is critical to grow core/shell structures. High temperature growth of the shells seems to be a better strategy than previously reported low-temperature approaches to obtain bright NPLs. Here, we synthesize CdSe/CdZnS core/shell NPLs whose shell alloy content is tuned to optimize the charge injection in the LED structure. The obtained LED has exceptionally low turn-on voltage, long-term stability (>3100 h at 100 cd m^-2), external quantum efficiency above 5%, and luminance up to 35,000 cd m^-2. We study the low-temperature performance of the LED and find that there is a delay of droop in terms of current density as temperature decreases. In the last part of the paper, we design a large LED (56 mm² emitting area) and test its potential for LiFi-like communication. In such an approach, the LED is not only a lightning source but also used to transmit a communication signal to a PbS quantum dot solar cell used as a broadband photodetector. Operating conditions compatible with both lighting and information transfer have been identified. This work paves the way toward an all NC-based communication setup.

Tunable Metal Oxide Shell as a Spacer to Study Energy Transfer in Semiconductor Nanocrystals

Colloidal semiconductor nanocrystals (NCs) are promising components in various optoelectronic and photocatalytic devices; however, the mechanism of energy transport in these materials remains to be further understood. Here, we investigate the distance dependence of the electronic interactions between CsPbBr₃ nanocubes and CdSe nanoplateles using an alumina (AlO_x) shell as a spacer. CsPbBr₃@AlO_x core@shell NCs are synthesized via colloidal atomic layer deposition (c-ALD), which allows us to fine-tune the oxide thickness and thus the distance d between the two NCs. This versatile material platform shows that the electronic interactions between the CsPbBr₃ NCs and the CdSe nanoplatelets can be tuned from electron to energy transfer by increasing the shell thickness, whereas previous studies on the same system had been limited to the former. Considering the applicability of the c-ALD to different NCs, we suggest that metal oxide shell spacers synthesized by this approach can generally be used to study energy-transfer mechanisms at the nanoscale.

Nanoshell quantum dots: Quantum confinement beyond the exciton Bohr radius

Nanoshell quantum dots (QDs) represent a novel class of colloidal semiconductor nanocrystals (NCs), which supports tunable optoelectronic properties over the extended range of particle sizes. Traditionally, the ability to control the bandgap of colloidal semiconductor NCs is limited to small-size nanostructures, where photoinduced charges are confined by Coulomb interactions. A notorious drawback of such a restricted size range concerns the fact that assemblies of smaller nanoparticles tend to exhibit a greater density of interfacial and surface defects. This presents a potential problem for device applications of semiconductor NCs where the charge transport across nanoparticle films is important, as in the case of solar cells, field-effect transistors, and photoelectrochemical devices. The morphology of nanoshell QDs addresses this issue by enabling the quantum-confinement in the shell layer, where two-dimensional excitons can exist, regardless of the total particle size. Such a geometry exhibits one of the lowest surface-to-volume ratios among existing QD architectures and, therefore, could potentially lead to improved charge-transport and multi-exciton characteristics. The expected benefits of the nanoshell architecture were recently demonstrated by a number of reports on the CdS_bulk/CdSe nanoshell model system, showing an improved photoconductivity of solids and increased lifetime of multi-exciton populations. Along these lines, this perspective will summarize the recent work on CdS_bulk/CdSe nanoshell colloids and discuss the possibility of employing other nanoshell semiconductor combinations in light-harvesting and lasing applications.

Pressure-Tuned Core/Shell Configuration Transition of Shell Thickness-Dependent CdSe/CdS Nanocrystals

Pressure is adopted as a "clean" tool to achieve a core/shell configuration transition of CdSe/CdS nanocrystals (NCs) from quasi-type II to type I. The pressure-dependent photoluminescence (PL) spectra demonstrate a sudden decrease in PL intensity, because of the enhanced rate of exciton-exciton annihilation of type I structured CdSe/CdS NCs. Likewise, the large decrease in the PL lifetime with pressure confirms that the electron wave function mainly localizes into the CdSe core, indicating the decreased separation of electrons and holes in type I band alignment. We propose that pressure increases the conduction band energy of the CdS shell but hardly changes that of the CdSe core with almost both unchanged valence band energies, thus ultimately increasing the conduction band offsets between the CdSe core and CdS shell to form the type I core/shell configuration. Our studies elucidate the significance of external pressure in determining the electronic and optical properties of core/shell nanomaterials.

Exciton, Biexciton, and Hot Exciton Dynamics in CsPbBr3 Colloidal Nanoplatelets

Lead halide perovskites have emerged as promising materials for light-emitting devices. Here, we report the preparation of colloidal CsPbBr₃ nanoplatelets (3 × 4 × 23 nm³) experiencing a strong quasi-one-dimensional quantum confinement. Ultrafast transient absorption and broadband fluorescence up-conversion spectroscopies were employed to scrutinize the carrier and quasiparticle dynamics and to obtain a full description of the spectroscopic properties of the material. An exciton binding energy of 350 meV, an absorption cross section at 3.2 eV of 5.0 ± 0.3 × 10^-15 cm^-2, an efficient biexciton Auger recombination lifetime of 9 ± 1 ps, and a biexciton binding energy of 74 ± 4 meV were determined. Moreover, a short-lived emission from hot excitons was observed, which is related to the formation of band-edge excitons. The time constant of both processes is 300 ± 50 fs. These results show that CsPbBr₃ nanoplatelets are indeed quite promising for light-emitting technological applications.

Higher-Order Photon Correlation as a Tool To Study Exciton Dynamics in Quasi-2D Nanoplatelets

Colloidal semiconductor nanoplatelets, in which carriers are strongly confined only along one dimension, present fundamentally different excitonic properties than quantum dots, which support strong confinement in all three dimensions. In particular, multiple excitons strongly confined in just one dimension are free to rearrange in the lateral plane, reducing the probability for multibody collisions. Thus, while simultaneous multiple photon emission is typically quenched in quantum dots, in nanoplatelets its probability can be tuned according to size and shape. Here, we focus on analyzing multiexciton dynamics in individual CdSe/CdS nanoplatelets of various sizes through the measurement of second-, third-, and fourth-order photon correlations. For the first time, we can directly probe the dynamics of the two, three, and four exciton states at the single nanocrystal level. Remarkably, although higher orders of correlation vary substantially among the synthesis' products, they strongly correlate with the value of second order antibunching. The scaling of the higher-order moments with the degree of antibunching presents a small yet clear deviation from the accepted model of Auger recombination through binary collisions. Such a deviation suggests that many-body contributions are present already at the level of triexcitons. These findings highlight the benefit of high-order photon correlation spectroscopy as a technique to study multiexciton dynamics in colloidal semiconductor nanocrystals.

Effect of Lateral Size and Surface Passivation on the Near-Band-Edge Excitonic Emission from Quasi-Two-Dimensional CdSe Nanoplatelets

As a new type of quasi-two-dimensional nanomaterial, CdSe nanoplatelets (NPLs) possess excellent properties such as narrow emission peak, large absorption cross section, and a low threshold of amplified spontaneous emission. However, the origin of emission especially at low temperatures has not been studied clearly up till now. Here, we study the temperature-dependent photoluminescence of CdSe NPLs which show two emission peaks at low temperatures. It is interesting to note that the intensity of the low-energy peak shows a correlation with laser irradiation time. Moreover, the low-temperature PL spectra of four CdSe NPLs with different lateral sizes demonstrate the relationship of low-energy peaks with the surface. It has been confirmed that CdSe NPLs with larger surface areas to volume ratio have stronger low-energy emissions, which is ascribed to the surface-state-related emission. Finally, surface passivation of CdSe NPLs attenuates the intensity of the low-energy peak, which further verifies our model. Our results demonstrate the critical significance of surface in CdSe NPLs for their optical properties, which is crucial for the application of optoelectronic devices.

Giant Alloyed Hot Injection Shells Enable Ultralow Optical Gain Threshold in Colloidal Quantum Wells

As an attractive materials system for high-performance optoelectronics, colloidal nanoplatelets (NPLs) benefit from atomic-level precision in thickness, minimizing emission inhomogeneous broadening. Much progress has been made to enhance their photoluminescence quantum yield (PLQY) and photostability. However, to date, layer-by-layer growth of shells at room temperature has resulted in defects that limit PLQY and thus curtail the performance of NPLs as an optical gain medium. Here, we introduce a hot-injection method growing giant alloyed shells using an approach that reduces core/shell lattice mismatch and suppresses Auger recombination. Near-unity PLQY is achieved with a narrow full-width-at-half-maximum (20 nm), accompanied by emission tunability (from 610 to 650 nm). The biexciton lifetime exceeds 1 ns, an order of magnitude longer than in conventional colloidal quantum dots (CQDs). Reduced Auger recombination enables record-low amplified spontaneous emission threshold of 2.4 μJ cm^-2 under one-photon pumping. This is lower by a factor of 2.5 than the best previously reported value in nanocrystals (6 μJ cm^-2 for CdSe/CdS NPLs). Here, we also report single-mode lasing operation with a 0.55 mJ cm^-2 threshold under two-photoexcitation, which is also the best among nanocrystals (compared to 0.76 mJ cm^-2 from CdSe/CdS CQDs in the Fabry-Pérot cavity). These findings indicate that hot-injection growth of thick alloyed shells makes ultrahigh performance NPLs.

Exciton Spatial Coherence and Optical Gain in Colloidal Two-Dimensional Cadmium Chalcogenide Nanoplatelets

Two-dimensional (2D) cadmium chalcogenide (CdX, X = Se, S, Te) colloidal nanoplatelets (NPLs) make up an emerging class of quantum well materials that exhibit many unique properties including uniform quantum confinement, narrow thickness distribution, large exciton binding energy, giant oscillator strength, long Auger lifetime, and high photoluminescence quantum yield. These properties have led to their great performances in optoelectrical applications such as lasing materials with a low threshold and large gain coefficient. Many of these properties are determined by the structure and dynamics of band-edge excitons in these 2D materials. Motivated by fundamental understanding of both 2D nanomaterials and their applications, the properties of 2D excitons have received intense recent interest. This Account provides an overview of three key properties of 2D excitons: how big is the 2D exciton (i.e., exciton center-of-mass coherent area); how the exciton moves in 2D NPLs (i.e., exciton in-plane transport mechanism); how multiple excitons interact with each other (i.e., biexciton Auger recombination); and their effects on the optical gain mechanism and threshold of colloidal NPLs. After a brief introduction in Section 1, the current understandings of 2D electronic structures of cadmium chalcogenide NPLs, and type-I CdSe/CdS and type-II CdSe/CdTe core/crown NPL heterostructures are summarized in Section 2. Section 3 discusses the direct measurement of exciton center-of-mass coherent area in 2D CdSe NPLs, its dependence on NPL parameters (thickness, lateral area, dielectric environment, and temperature), and the resulting giant oscillator strength transition (GOST) effect in 2D NPLs. 2D exciton diffusive in-plane transport in CdX NPLs and the comparison of exciton transport mechanisms in 2D NPLs and 1D nanorods are reviewed in Section 4. How Auger recombination lifetime depends on nanocrystal dimensions in NPLs, quantum dots, and nanorods is discussed in Section 5. The lateral area and thickness dependent Auger recombination rates of NPLs are shown to be well described by a model that accounts for the different dependence of the Auger recombination rates on the quantum confined and nonconfined dimensions. It is shown that Auger recombination rates do not follow the "universal volume scaling" law in 1D and 2D nanocrystals. Section 6 describes optical gain mechanisms in CdSe NPLs and the dependence of optical gain threshold on NPL lateral size, optical density, and temperature. The differences of optical gain properties in 0D-2D and the bulk materials are also discussed, highlighting the unique gain properties of 2D NPLs. At last, the Account ends with a summary and perspective of key remaining challenges in this field in Section 7.