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Yang L, Yuan Y, Fu B, Yang J, Dai D, Shi S, Yan S, Zhu R, Han X, Li H, Zuo Z, Wang C, Huang Y, Jin K, Gong Q, Xu X. Revealing broken valley symmetry of quantum emitters in WSe 2 with chiral nanocavities. Nat Commun 2023; 14:4265. [PMID: 37460549 DOI: 10.1038/s41467-023-39972-7] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/05/2023] [Accepted: 07/05/2023] [Indexed: 07/20/2023] Open
Abstract
Single photon emission of quantum emitters (QEs) carrying internal degrees of freedom such as spin and angular momentum plays an important role in quantum optics. Recently, QEs in two-dimensional semiconductors have attracted great interest as promising quantum light sources. However, whether those QEs are characterized by the same valley physics as delocalized valley excitons is still under debate. Moreover, the potential applications of such QEs still need to be explored. Here we show experimental evidence of valley symmetry breaking for neutral QEs in WSe2 monolayer by interacting with chiral plasmonic nanocavities. The anomalous magneto-optical behaviour of the coupled QEs suggests that the polarization state of emitted photon is modulated by the chiral nanocavity instead of the valley-dependent optical selection rules. Calculations of cavity quantum electrodynamics further show the absence of intrinsic valley polarization. The cavity-dependent circularly polarized single-photon output also offers a strategy for future applications in chiral quantum optics.
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Affiliation(s)
- Longlong Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yu Yuan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Bowen Fu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China
| | - Jingnan Yang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China
| | - Danjie Dai
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Shushu Shi
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Sai Yan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Rui Zhu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xu Han
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, 100081, China
| | - Hancong Li
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China
| | - Zhanchun Zuo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Can Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China.
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China.
| | - Yuan Huang
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, 100081, China.
| | - Kuijuan Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Qihuang Gong
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu, 226010, China
| | - Xiulai Xu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China.
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu, 226010, China.
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Stevens CE, Chuang HJ, Rosenberger MR, McCreary KM, Dass CK, Jonker BT, Hendrickson JR. Enhancing the Purity of Deterministically Placed Quantum Emitters in Monolayer WSe 2. ACS NANO 2022; 16:20956-20963. [PMID: 36445838 DOI: 10.1021/acsnano.2c08553] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
We present a method utilizing an applied electrostatic potential for suppressing the broad defect bound excitonic emission in two-dimensional materials (2DMs) which otherwise inhibits the purity of strain induced single photon emitters (SPEs). Our heterostructure consists of a WSe2 monolayer on a polymer in which strain has been deterministically introduced via an atomic force microscope (AFM) tip. We show that by applying an electrostatic potential, the broad defect bound background is suppressed at cryogenic temperatures, resulting in a substantial improvement in single photon purity demonstrated by a 10-fold reduction of the correlation function g(2)(0) value from 0.73 to 0.07. In addition, we see a 2-fold increase in the intensity of the SPEs as well as the ability to activate/deactivate the emitters at certain wavelengths. Finally, we present an increase in the operating temperature of the SPE up to 110 K, a 50 K increase when compared with the results when no electrostatic potential is present.
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Affiliation(s)
| | - Hsun-Jen Chuang
- Materials Science & Technology Division, Naval Research Laboratory, Washington, D.C. 20375, United States
| | - Matthew R Rosenberger
- Materials Science & Technology Division, Naval Research Laboratory, Washington, D.C. 20375, United States
| | - Kathleen M McCreary
- Materials Science & Technology Division, Naval Research Laboratory, Washington, D.C. 20375, United States
| | - Chandriker Kavir Dass
- Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433, United States
| | - Berend T Jonker
- Materials Science & Technology Division, Naval Research Laboratory, Washington, D.C. 20375, United States
| | - Joshua R Hendrickson
- Sensors Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433, United States
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3
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Huang L, Krasnok A, Alú A, Yu Y, Neshev D, Miroshnichenko AE. Enhanced light-matter interaction in two-dimensional transition metal dichalcogenides. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2022; 85:046401. [PMID: 34939940 DOI: 10.1088/1361-6633/ac45f9] [Citation(s) in RCA: 31] [Impact Index Per Article: 15.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/19/2021] [Accepted: 12/16/2021] [Indexed: 05/27/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenide (TMDC) materials, such as MoS2, WS2, MoSe2, and WSe2, have received extensive attention in the past decade due to their extraordinary electronic, optical and thermal properties. They evolve from indirect bandgap semiconductors to direct bandgap semiconductors while their layer number is reduced from a few layers to a monolayer limit. Consequently, there is strong photoluminescence in a monolayer (1L) TMDC due to the large quantum yield. Moreover, such monolayer semiconductors have two other exciting properties: large binding energy of excitons and valley polarization. These properties make them become ideal materials for various electronic, photonic and optoelectronic devices. However, their performance is limited by the relatively weak light-matter interactions due to their atomically thin form factor. Resonant nanophotonic structures provide a viable way to address this issue and enhance light-matter interactions in 2D TMDCs. Here, we provide an overview of this research area, showcasing relevant applications, including exotic light emission, absorption and scattering features. We start by overviewing the concept of excitons in 1L-TMDC and the fundamental theory of cavity-enhanced emission, followed by a discussion on the recent progress of enhanced light emission, strong coupling and valleytronics. The atomically thin nature of 1L-TMDC enables a broad range of ways to tune its electric and optical properties. Thus, we continue by reviewing advances in TMDC-based tunable photonic devices. Next, we survey the recent progress in enhanced light absorption over narrow and broad bandwidths using 1L or few-layer TMDCs, and their applications for photovoltaics and photodetectors. We also review recent efforts of engineering light scattering, e.g., inducing Fano resonances, wavefront engineering in 1L or few-layer TMDCs by either integrating resonant structures, such as plasmonic/Mie resonant metasurfaces, or directly patterning monolayer/few layers TMDCs. We then overview the intriguing physical properties of different van der Waals heterostructures, and their applications in optoelectronic and photonic devices. Finally, we draw our opinion on potential opportunities and challenges in this rapidly developing field of research.
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Affiliation(s)
- Lujun Huang
- School of Engineering and Information Technology, University of New South Wales, Canberra, ACT, 2600, Australia
| | - Alex Krasnok
- Department of Electrical and Computer Engineering, Florida International University, Miami, FL 33174, United States of America
| | - Andrea Alú
- Photonics Initiative, Advanced Science Research Center, City University of New York, New York, NY 10031, United States of America
- Physics Program, Graduate Center, City University of New York, New York, NY 10016, United States of America
| | - Yiling Yu
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, United States of America
| | - Dragomir Neshev
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Andrey E Miroshnichenko
- School of Engineering and Information Technology, University of New South Wales, Canberra, ACT, 2600, Australia
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4
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Garai M, Zhu Z, Shi J, Li S, Xu QH. Single-particle studies on plasmon enhanced photoluminescence of monolayer MoS 2 by gold nanoparticles of different shapes. J Chem Phys 2021; 155:234201. [PMID: 34937371 DOI: 10.1063/5.0073754] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/15/2023] Open
Abstract
Plasmon-exciton interactions between noble metal nanostructures and two-dimensional transition metal dichalcogenides have drawn great interest due to their significantly enhanced optical properties. Plasmon resonance of noble metal nanoparticles and plasmon-exciton interactions are strongly dependent on the particle morphology. Single-particle spectroscopic studies can overcome the ensemble average effects of sample inhomogeneity to unambiguously reveal the effects of the particle morphology. In this work, plasmon modulated emission of MoS2 in various plasmon-MoS2 hybrid structures has been studied on the single-particle level. Gold (Au) nanoantennas of different shapes including nanosphere, nanorod, nanocube, and nanotriangle with similar overall dimensions, which have different sharp tips and contact areas with MoS2, have been chosen to explore the particle shape effects. Different extent of enhancement in photoluminescence (PL) of MoS2 was observed for Au nanoantennas of different shapes. It was found that Au nanotriangles gave the highest enhancement factor, while Au nanospheres gave the lowest enhancement factor. The numerical simulation results show that the dominant contribution arises from an increased quantum yield, while enhanced excitation efficiency just plays a minor role. The quantum yield enhancement is affected by both the sharp tips and contact mode of the Au nanoantenna with MoS2. Polarization of the MoS2 emission was also found to be modulated by the plasmon mode of the Au nanoantenna. These single-particle spectroscopic studies allow us to unambiguously reveal the effects of the particle morphology on plasmon enhanced PL in these nanohybrids to provide a better understanding of the plasmon-exciton interactions.
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Affiliation(s)
- Monalisa Garai
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543
| | - Ziyu Zhu
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543
| | - Jia Shi
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543
| | - Shisheng Li
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551
| | - Qing-Hua Xu
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543
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5
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Zhao S, Li X, Dong B, Wang H, Wang H, Zhang Y, Han Z, Zhang H. Valley manipulation in monolayer transition metal dichalcogenides and their hybrid systems: status and challenges. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2021; 84:026401. [PMID: 33440363 DOI: 10.1088/1361-6633/abdb98] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Recently, the emerging conceptual valley-related devices have attracted much attention due to the progress on generating, controlling, and detecting the valley degree of freedom in the transition metal dichalcogenide (TMD) monolayers. In general, it is known that achieving valley degree of freedom with long valley lifetime is crucial in the implementation of valleytronic devices. Here, we provide a brief introduction of the basic understandings of valley degree of freedom. We as well review the recent experimental advancement in the modulation of valley degree of freedom. The strategies include optical/magnetic/electric field tuning, moiré patterns, plasmonic metasurface, defects and strain engineering. In addition, we summarize the corresponding mechanisms, which can help to obtain large degree of polarization and long valley lifetimes in monolayer TMDs. Based on these methods, two-dimensional valley-optoelectronic systems based on TMD heterostructures can be constructed, providing opportunities for such as the new paradigm in data processing and transmission. Challenges and perspectives on the development of valleytronics are highlighted as well.
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Affiliation(s)
- Siwen Zhao
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Xiaoxi Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, People's Republic of China
- School of Material Science and Engineering, University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - Baojuan Dong
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, Taiyuan 030006, People's Republic of China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, People's Republic of China
| | - Huide Wang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Hanwen Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, People's Republic of China
- School of Material Science and Engineering, University of Science and Technology of China, Hefei 230026, People's Republic of China
| | - Yupeng Zhang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Zheng Han
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, Taiyuan 030006, People's Republic of China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, People's Republic of China
| | - Han Zhang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, People's Republic of China
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6
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Fonseca JJ, Yeats AL, Blue B, Zalalutdinov MK, Brintlinger T, Simpkins BS, Ratchford DC, Culbertson JC, Grim JQ, Carter SG, Ishigami M, Stroud RM, Cress CD, Robinson JT. Enabling remote quantum emission in 2D semiconductors via porous metallic networks. Nat Commun 2020; 11:5. [PMID: 31911592 PMCID: PMC6946668 DOI: 10.1038/s41467-019-13857-0] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/13/2019] [Accepted: 11/26/2019] [Indexed: 11/09/2022] Open
Abstract
Here we report how two-dimensional crystal (2DC) overlayers influence the recrystallization of relatively thick metal films and the subsequent synergetic benefits this provides for coupling surface plasmon-polaritons (SPPs) to photon emission in 2D semiconductors. We show that annealing 2DC/Au films on SiO2 results in a reverse epitaxial process where initially nanocrystalline Au films gain texture, crystallographically orient with the 2D crystal overlayer, and form an oriented porous metallic network (OPEN) structure in which the 2DC can suspend above or coat the inside of the metal pores. Both laser excitation and exciton recombination in the 2DC semiconductor launch propagating SPPs in the OPEN film. Energy in-/out- coupling occurs at metal pore sites, alleviating the need for dielectric spacers between the metal and 2DC layer. At low temperatures, single-photon emitters (SPEs) are present across an OPEN-WSe2 film, and we demonstrate remote SPP-mediated excitation of SPEs at a distance of 17 μm. Here, the authors develop a reverse epitaxial process whereby a nanocrystalline Au film becomes highly textured and support a suspended 2D WSe2 overlayer. Surface plasmon polaritons are launched in nanostructured Au by laser excitation and couple remotely to single photon emitters present in WSe2.
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Affiliation(s)
- Jose J Fonseca
- U.S. Naval Research Laboratory, Washington, DC, 20375, USA.
| | - Andrew L Yeats
- U.S. Naval Research Laboratory, Washington, DC, 20375, USA
| | - Brandon Blue
- Department of Physics and Nanoscience Technology Center, University of Central Florida, Orlando, FL, 32816, USA
| | | | | | | | | | | | - Joel Q Grim
- U.S. Naval Research Laboratory, Washington, DC, 20375, USA
| | | | - Masa Ishigami
- Department of Physics and Nanoscience Technology Center, University of Central Florida, Orlando, FL, 32816, USA
| | | | - Cory D Cress
- U.S. Naval Research Laboratory, Washington, DC, 20375, USA
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7
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Yang Z, Aghaeimeibodi S, Waks E. Chiral light-matter interactions using spin-valley states in transition metal dichalcogenides. OPTICS EXPRESS 2019; 27:21367-21379. [PMID: 31510216 DOI: 10.1364/oe.27.021367] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/12/2019] [Accepted: 06/25/2019] [Indexed: 06/10/2023]
Abstract
Chiral light-matter interactions can enable polarization to control the direction of light emission in a photonic device. Most realizations of chiral light-matter interactions require external magnetic fields to break time-reversal symmetry of the emitter. One way to eliminate this requirement is to utilize strong spin-orbit coupling present in transition metal dichalcogenides that exhibit a valley-dependent polarized emission. Such interactions were previously reported using plasmonic waveguides, but these structures exhibit short propagation lengths due to loss. Chiral dielectric structures exhibit much lower loss levels and could therefore solve this problem. We demonstrate chiral light-matter interactions using spin-valley states of transition metal dichalcogenide monolayers coupled to a dielectric waveguide. We use a photonic crystal glide-plane waveguide that exhibits chiral modes with high field intensity, coupled to monolayer WSe2. We show that the circularly polarized emission of the monolayer preferentially couples to one direction of the waveguide, with a directionality as high as 0.35, limited by the polarization purity of the bare monolayer emission. This system enables on-chip directional control of light and could provide new ways to control spin and valley degrees of freedom in a scalable photonic platform.
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8
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Abstract
A plasmonic modulator is a device that controls the amplitude or phase of propagating plasmons. In a pure plasmonic modulator, the presence or absence of a plasmonic pump wave controls the amplitude of a plasmonic probe wave through a channel. This control has to be mediated by an interaction between disparate plasmonic waves, typically requiring the integration of a nonlinear material. In this work, we demonstrate a 2D semiconductor nonlinear plasmonic modulator based on a WSe2 monolayer integrated on top of a lithographically defined metallic waveguide. We utilize the strong interaction between the surface plasmon polaritons (SPPs) and excitons in the WSe2 to give a 73 % change in transmission through the device. We demonstrate control of the propagating SPPs using both optical and SPP pumps, realizing a 2D semiconductor nonlinear plasmonic modulator, with an ultrafast response time of 290 fs.
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9
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Zhang Z, Liu Y, Fang Y, Cao B, Huang J, Liu K, Dong B. Near-Infrared-Plasmonic Energy Upconversion in a Nonmetallic Heterostructure for Efficient H 2 Evolution from Ammonia Borane. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2018; 5:1800748. [PMID: 30250807 PMCID: PMC6145233 DOI: 10.1002/advs.201800748] [Citation(s) in RCA: 29] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/14/2018] [Revised: 06/03/2018] [Indexed: 05/19/2023]
Abstract
Plasmonic metal nanostructures have been widely used to enhance the upconversion efficiency of the near-infrared (NIR) photons into the visible region via the localized surface plasmon resonance (LSPR) effect. However, the direct utilization of low-cost nonmetallic semiconductors to both concentrate and transfer the NIR-plasmonic energy in the upconversion system remains a significant challenge. Here, a fascinating process of NIR-plasmonic energy upconversion in Yb3+/Er3+-doped NaYF4 nanoparticles (NaYF4:Yb-Er NPs)/W18O49 nanowires (NWs) heterostructures, which can selectively enhance the upconversion luminescence by two orders of magnitude, is demonstrated. Combined with theoretical calculations, it is proposed that the NIR-excited LSPR of W18O49 NWs is the primary reason for the enhanced upconversion luminescence of NaYF4:Yb-Er NPs. Meanwhile, this plasmon-enhanced upconversion luminescence can be partly absorbed by the W18O49 NWs to re-excite its higher energy LSPR, thus leading to the selective enhancement of upconversion luminescence for the NaYF4:Yb-Er/W18O49 heterostructures. More importantly, based on this process of plasmonic energy transfer, an NIR-driven catalyst of NaYF4:Yb-Er NPs@W18O49 NWs quasi-core/shell heterostructure, which exhibits a ≈35-fold increase in the catalytic H2 evolution from ammonia borane (BH3NH3) is designed and synthesized. This work provides insight on the development of nonmetallic plasmon-sensitized optical materials that can potentially be applied in photocatalysis, optoelectronic, and photovoltaic devices.
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Affiliation(s)
- Zhenyi Zhang
- Key Laboratory of New Energy and Rare Earth Resource Utilization of State Ethnic Affairs CommissionKey Laboratory of Photosensitive Materials & Devices of Liaoning ProvinceSchool of Physics and Materials EngineeringDalian Minzu University18 Liaohe West RoadDalian116600P. R. China
| | - Yang Liu
- Key Laboratory of New Energy and Rare Earth Resource Utilization of State Ethnic Affairs CommissionKey Laboratory of Photosensitive Materials & Devices of Liaoning ProvinceSchool of Physics and Materials EngineeringDalian Minzu University18 Liaohe West RoadDalian116600P. R. China
- School of Materials Science and EngineeringDalian University of TechnologyDalian116024P. R. China
| | - Yurui Fang
- Key Laboratory of Materials Modification by LaserElectronand Ion Beams (Ministry of Education)School of PhysicsDalian University of TechnologyDalian116024P. R. China
| | - Baosheng Cao
- Key Laboratory of New Energy and Rare Earth Resource Utilization of State Ethnic Affairs CommissionKey Laboratory of Photosensitive Materials & Devices of Liaoning ProvinceSchool of Physics and Materials EngineeringDalian Minzu University18 Liaohe West RoadDalian116600P. R. China
| | - Jindou Huang
- Key Laboratory of New Energy and Rare Earth Resource Utilization of State Ethnic Affairs CommissionKey Laboratory of Photosensitive Materials & Devices of Liaoning ProvinceSchool of Physics and Materials EngineeringDalian Minzu University18 Liaohe West RoadDalian116600P. R. China
| | - Kuichao Liu
- Key Laboratory of New Energy and Rare Earth Resource Utilization of State Ethnic Affairs CommissionKey Laboratory of Photosensitive Materials & Devices of Liaoning ProvinceSchool of Physics and Materials EngineeringDalian Minzu University18 Liaohe West RoadDalian116600P. R. China
| | - Bin Dong
- Key Laboratory of New Energy and Rare Earth Resource Utilization of State Ethnic Affairs CommissionKey Laboratory of Photosensitive Materials & Devices of Liaoning ProvinceSchool of Physics and Materials EngineeringDalian Minzu University18 Liaohe West RoadDalian116600P. R. China
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10
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Valley-Selective Response of Nanostructures Coupled to 2D Transition-Metal Dichalcogenides. APPLIED SCIENCES-BASEL 2018. [DOI: 10.3390/app8071157] [Citation(s) in RCA: 20] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
Abstract
Monolayer (1L) transition-metal dichalcogenides (TMDCs) are attractive materials for several optoelectronic applications because of their strong excitonic resonances and valley-selective response. Valley excitons in 1L-TMDCs are formed at opposite points of the Brillouin zone boundary, giving rise to a valley degree of freedom that can be treated as a pseudospin, and may be used as a platform for information transport and processing. However, short valley depolarization times and relatively short exciton lifetimes at room temperature prevent using valley pseudospins in on-chip integrated valley devices. Recently, it was demonstrated how coupling these materials to optical nanoantennas and metasurfaces can overcome this obstacle. Here, we review the state-of-the-art advances in valley-selective directional emission and exciton sorting in 1L-TMDC mediated by nanostructures and nanoantennas. We briefly discuss the optical properties of 1L-TMDCs paying special attention to their photoluminescence/absorption spectra, dynamics of valley depolarization, and the valley Hall effect. Then, we review recent works on nanostructures for valley-selective directional emission from 1L-TMDCs.
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11
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Krasnok A, Lepeshov S, Alú A. Nanophotonics with 2D transition metal dichalcogenides [Invited]. OPTICS EXPRESS 2018; 26:15972-15994. [PMID: 30114850 DOI: 10.1364/oe.26.015972] [Citation(s) in RCA: 22] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/09/2018] [Accepted: 04/17/2018] [Indexed: 06/08/2023]
Abstract
Two-dimensional semiconducting transition metal dichalcogenides (TMDCs) have recently become attractive materials for several optoelectronic applications, such as photodetection, light harvesting, phototransistors, light-emitting diodes, and lasers. Their bandgap lies in the visible and near-IR range, and they possess strong excitonic resonances, high oscillator strengths, and valley-selective response. Coupling these materials to optical nanocavities enhances the quantum yield of exciton emission, enabling advanced quantum optics and nanophotonics devices. Here, we review the state-of-the-art advances of hybrid exciton-polariton structures based on monolayer TMDCs coupled to plasmonic and dielectric nanocavities. We discuss the optical properties of 2D WS2, WSe2, MoS2 and MoSe2 materials, paying special attention to their energy bands, photoluminescence/absorption spectra, excitonic fine structure, and to the dynamics of exciton formation and valley depolarization. We also discuss light-matter interactions in such hybrid exciton-polariton structures. Finally, we focus on weak and strong coupling regimes in monolayer TMDCs-based exciton-polariton systems, envisioning research directions and future opportunities for this material platform.
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