Spectro-electrochemical Probing of Intrinsic and Extrinsic Processes in Exciton Recombination in I-III-VI2 Nanocrystals

Structural Ordering in Ultrasmall Multicomponent Chalcogenides: The Case of Quaternary Cu-Zn-In-Se Nanocrystals

The compositional tunability of non-isovalent multicomponent chalcogenide thin films and the extent of atomic ordering of their crystal structure is key to the performance of many modern technologies. In contrast, the effects of ordering are rarely studied for quantum-confined materials, such as colloidal nanocrystals. In this paper, the possibilities around composition tunability and atomic ordering are explored in ultrasmall ternary and quaternary quantum dots, taking I-III-VI-group Cu-Zn-In-Se semiconductor as a case study. A quantitative synthesis for 3.3 nm quaternary chalcogenide nanocrystals is developed and shown that cation and cationic vacancy ordering can be achieved in these systems consisting of only 100s of atoms. Combining experiment and theoretical calculations, the relationship between structural ordering and optical properties of the materials are demonstrated. It is found that the arrangement and ordering of cationic sublattice plays an important role in the luminescent efficiency. Specifically, the concentration of Cu-vacancy couples in the nanocrystal correlates with luminescence quantum yield, while structure ordering increases the occurrence of such optically active Cu-vacancy units. On the flip side, the detrimental impact of cationic site disorder in I-III-VI nanocrystals can be mitigated by introducing a cation of intermediate valence, such as Zn (II).

Carrier Dynamics and Recombination Pathways in Ag-In-Zn-S Quantum Dots

Strong tolerance to off-stoichiometry of group I-III-VI semiconductors in their nanocrystal form allows fabrication of multinary, alloyed structures of desired properties. In particular, alloyed Cu-In-Zn-S and Ag-In-Zn-S quantum dots (QDs) have recently emerged as efficient fluorophors, in which tailoring the composition allows tuning the optical properties, and achieving photoluminescence (PL) quantum yields approaching unity. However, poor understanding of the carrier recombination mechanism in these materials limits their further development. In this work, by studying transient absorption and temperature dependent PL on bare QDs and QDs conjugated with electron scavenger molecules, we obtain a detailed picture of carrier dynamics. Our results challenge the prevailing assumption that the PL is due to a donor-acceptor-pair transition. We show that the PL occurs as a result of a recombination of a delocalized electron with a localized hole.

Heavy-Metal-Free Colloidal Quantum Dots: Progress and Opportunities in Solar Technologies

Colloidal quantum dots (QDs) hold great promise as building blocks in solar technologies owing to their remarkable photostability and adjustable properties through the rationale involving size, atomic composition of core and shell, shapes, and surface states. However, most high-performing QDs in solar conversion contain hazardous metal elements, including Cd and Pb, posing significant environmental risks. Here, a comprehensive review of heavy-metal-free colloidal QDs for solar technologies, including photovoltaic (PV) devices, solar-to-chemical fuel conversion, and luminescent solar concentrators (LSCs), is presented. Emerging synthetic strategies to optimize the optical properties by tuning the energy band structure and manipulating charge dynamics within the QDs and at the QDs/charge acceptors interfaces, are analyzed. A comparative analysis of different synthetic methods is provided, structure-property relationships in these materials are discussed, and they are correlated with the performance of solar devices. This work is concluded with an outlook on challenges and opportunities for future work, including machine learning-based design, sustainable synthesis, and new surface/interface engineering.

Rigid CuInS2/ZnS Core/Shell Quantum Dots for High Performance Infrared Light-Emitting Diodes

CuInS2 (CIS) quantum dots (QDs) represent an important class of colloidal materials with broad application potential, owing to their low toxicity and unique optical properties. Although coating with a ZnS shell has been identified as a crucial method to enhance optical performance, the occurrence of cation exchange has historically resulted in the unintended formation of Cu-In-Zn-S alloyed QDs, causing detrimental blueshifts in both absorption and photoluminescence (PL) spectral profiles. In this study, we present a facile one-pot synthetic strategy aimed at impeding the cation exchange process and promoting ZnS shell growth on CIS core QDs. The suppression of both electron-phonon interaction and Auger recombination by the rigid ZnS shell results in CIS/ZnS core/shell QDs that exhibit a wide near-infrared (NIR) emission coverage and a remarkable PL quantum yield of 92.1%. This effect boosts the fabrication of high-performance, QD-based NIR light-emitting diodes with the best stability of such materials so far.

Synthesis and hybridization of CuInS2 nanocrystals for emerging applications

Copper indium sulfide (CuInS2) is a ternary A(I)B(III)X(VI)2-type semiconductor featuring a direct bandgap with a high absorption coefficient. In attempts to explore their practical applications, nanoscale CuInS2 has been synthesized with crystal sizes down to the quantum confinement regime. The merits of CuInS2 nanocrystals (NCs) include wide emission tunability, a large Stokes shift, long decay time, and eco-friendliness, making them promising candidates in photoelectronics and photovoltaics. Over the past two decades, advances in wet-chemistry synthesis have achieved rational control over cation-anion reactivity during the preparation of colloidal CuInS2 NCs and post-synthesis cation exchange. The precise nano-synthesis coupled with a series of hybridization strategies has given birth to a library of CuInS2 NCs with highly customizable photophysical properties. This review article focuses on the recent development of CuInS2 NCs enabled by advanced synthetic and hybridization techniques. We show that the state-of-the-art CuInS2 NCs play significant roles in optoelectronic and biomedical applications.

Photoexcited Carrier Transfer in CuInS2 Nanocrystal Assembly by Suppressing Resonant-Energy Transfer

High-density assemblies or superlattice structures composed of colloidal semiconductor nanocrystals have attracted attention as key materials for next-generation photoelectric conversion devices such as quantum-dot solar cells. In these nanocrystal solids, unique transport and optical phenomena occur due to quantum coupling of localized energy states, charge-carrier hopping, and electromagnetic interactions among closely arranged nanocrystals. In particular, the photoexcited carrier dynamics in nanocrystal solids is important because it significantly affects various device parameters. In this study, we report the photoexcited carrier dynamics in a solid film of CuInS2 nanocrystals, which is one of the potential nontoxic substitutes with Cd- and Pb-free compositions. Meanwhile, these subjects have been extensively studied in nanocrystal solids formed by CdSe and PbS systems. A carrier-hopping mechanism was confirmed using temperature-dependent photoluminescence spectroscopy, which yielded a typical value of the photoexcited carrier-transfer rate of (2.2±0.6)×107  s-1 by suppressing the influence of the excitation-energy transfer.

Optically detected magnetic resonance spectroscopic analyses on the role of magnetic ions in colloidal nanocrystals

Incorporating magnetic ions into semiconductor nanocrystals has emerged as a prominent research field for manipulating spin-related properties. The magnetic ions within the host semiconductor experience spin-exchange interactions with photogenerated carriers and are often involved in the recombination routes, stimulating special magneto-optical effects. The current account presents a comparative study, emphasizing the impact of engineering nanostructures and selecting magnetic ions in shaping carrier-magnetic ion interactions. Various host materials, including the II-VI group, halide perovskites, and I-III-VI2 in diverse structural configurations such as core/shell quantum dots, seeded nanorods, and nanoplatelets, incorporated with magnetic ions such as Mn2+, Ni2+, and Cu1+/2+ are highlighted. These materials have recently been investigated by us using state-of-the-art steady-state and transient optically detected magnetic resonance (ODMR) spectroscopy to explore individual spin-dynamics between the photogenerated carriers and magnetic ions and their dependence on morphology, location, crystal composition, and type of the magnetic ion. The information extracted from the analyses of the ODMR spectra in those studies exposes fundamental physical parameters, such as g-factors, exchange coupling constants, and hyperfine interactions, together providing insights into the nature of the carrier (electron, hole, dopant), its local surroundings (isotropic/anisotropic), and spin dynamics. The findings illuminate the importance of ODMR spectroscopy in advancing our understanding of the role of magnetic ions in semiconductor nanocrystals and offer valuable knowledge for designing magnetic materials intended for various spin-related technologies.

Electrochemical Control over the Optical Properties of II-VI Colloidal Nanoplatelets by Tailoring the Station of Extra Charge Carriers

An electrochemical (EC) method has been successfully applied to regulate the optical properties of nanocrystals, such as reducing their gain threshold by EC doping and enhancing their photoluminescence intensity by EC filling of trap states. However, the processes of EC doping and filling are rarely reported simultaneously in a single study, hindering the understanding of their underlying interactions. Here, we report the spectroelectrochemical (SEC) studies of quasi-two-dimensional nanoplatelets (NPLs), intending to clarify the above issues. EC doping is successfully achieved in CdSe/CdZnS core/shell NPLs, with red-shifted photoluminescence and a reversal of the emission intensity trend. The injection of extra electrons (holes) into the conduction (valence) band edges needs high bias voltages, while the passivation/activation process of trap states with the shift of Fermi level starts at lower EC potentials. Then, we explore the role of excitation light conditions in these processes, different from existing SEC research studies. Interestingly, increasing the laser power density can hinder EC electron injection, whereas decreasing the excitation energy evades the passivation process of trap states. Moreover, we demonstrate that EC control strategies can be used to realize color display and anti-counterfeiting applications via simultaneously tailoring the photoluminescence intensity of red- and green-emitting NPLs.

Electrochemical control of emission enhancement in solid-state nitrogen-doped carbon quantum dots

Because of their excellent optical and electrical properties, doped carbon quantum dots (CQDs) are expected to be used in novel film optoelectronic devices such as light-emitting diodes and solar cells. However, these device advancements are currently hindered by the elusive photophysical process of doped CQDs in solid-state films. Here, the optical properties of nitrogen-doped CQD (N-CQD) films are studied using spectro-electrochemical (SEC) methods. A distinctive photoluminescence (PL) enhancement phenomenon is observed, in which the PL intensity of the N-CQD film can be increased in both positive and negative electrochemical potential sweeps. The effect of positive potential on PL enhancement is greater (∼340% at +1.4 V), while that of negative potential is slightly weaker (∼10% at -1.4 V). To the best of our knowledge, no similar brightening process has been reported in all previous SEC studies on a variety of QDs, wherein the emission intensity can only exhibit enhancement under positive or negative potential at most. We propose that the above PL brightening is related to the weakened π-π stacking effect after electrochemical charge injection and nitrogen doping plays a crucial role in it. Finally, a low hysteresis reversible electrochemistry regulation of the PL spectrum can be achieved by increasing electrolyte fluidity with argon gas bubbling to reduce local charge aggregation.

Optically Detected Magnetic Resonance Spectroscopy of Cu-Doped CdSe/CdS and CuInS2 Colloidal Quantum Dots

Copper-doped II-VI and copper-based I-III-VI₂ colloidal quantum dots (CQDs) have been at the forefront of interest in nanocrystals over the past decade, attributable to their optically activated copper states. However, the related recombination mechanisms are still unclear. The current work elaborates on recombination processes in such materials by following the spin properties of copper-doped CdSe/CdS (Cu@CdSe/CdS) and of CuInS₂ and CuInS₂/(CdS, ZnS) core/shell CQDs using continuous-wave and time-resolved optically detected magnetic resonance (ODMR) spectroscopy. The Cu@CdSe/CdS ODMR showed two distinct resonances with different g factors and spin relaxation times. The best fit by a spin Hamiltonian simulation suggests that emission comes from recombination of a delocalized electron at the conduction band edge with a hole trapped in a Cu²⁺ site with a weak exchange coupling between the two spins. The ODMR spectra of CuInS₂ CQDs (with and without shells) differ significantly from those of the copper-doped II-VI CQDs. They are comprised of a primary resonance accompanied by another resonance at half-field, with a strong correlation between the two, indicating the involvement of a triplet exciton and hence stronger electron-hole exchange coupling than in the doped core/shell CQDs. The spin Hamiltonian simulation shows that the hole is again associated with a photogenerated Cu²⁺ site. The electron resides near this Cu²⁺ site, and its ODMR spectrum shows contributions from superhyperfine coupling to neighboring indium atoms. These observations are consistent with the occurrence of a self-trapped exciton associated with the copper site. The results presented here support models under debate for over a decade and help define the magneto-optical properties of these important materials.

Managing Photoinduced Electron Transfer in AgInS2-CdS Heterostructures

Ternary semiconductors such as AgInS2 with their interesting photocatalytic properties can serve as building blocks to design light harvesting assemblies. The intraband transitions created by the metal ions extend the absorption well beyond the bandgap transition. The interfacial electron transfer of AgInS2 with surface bound ethyl viologen under bandgap and sub band gap irradiation as probed by steady state photolysis and transient absorption spectroscopy offers new insights into the participation of conduction band and trapped electrons. Capping AgInS2 with CdS shifts emission maximum to the blue and increases the emission yield as the surface defects are remediated. CdS capping also promotes charge separation as evident from the efficiency of electron transfer to ethyl viologen, which increased from 14% to 29%. The transient absorption measurements which elucidate the kinetic aspects of electron transfer processes in AgInS2 and CdS capped AgInS2 are presented. The improved performance of CdS capped AgInS2 offers new opportunities to employ them as photocatalysts.

Indium(II) Chloride as a Precursor in the Synthesis of Ternary (Ag-In-S) and Quaternary (Ag-In-Zn-S) Nanocrystals

A new indium precursor, namely, indium(II) chloride, was tested as a precursor in the synthesis of ternary Ag-In-S and quaternary Ag-In-Zn-S nanocrystals. This new precursor, being in fact a dimer of Cl2In-InCl2 chemical structure, is significantly more reactive than InCl3, typically used in the preparation of these types of nanocrystals. This was evidenced by carrying out comparative syntheses under the same reaction conditions using these two indium precursors in combination with the same silver (AgNO3) and zinc (zinc stearate) precursors. In particular, the use of indium(II) chloride in combination with low concentrations of the zinc precursor yielded spherical-shaped (D = 3.7-6.2 nm) Ag-In-Zn-S nanocrystals, whereas for higher concentrations of this precursor, rodlike nanoparticles (L = 9-10 nm) were obtained. In all cases, the resulting nanocrystals were enriched in indium (In/Ag = 1.5-10.3). Enhanced indium precursor conversion and formation of anisotropic, longitudinal nanoparticles were closely related to the presence of thiocarboxylic acid type of ligands in the reaction mixture. These ligands were generated in situ and subsequently bound to surfacial In(III) cations in the growing nanocrystals. The use of the new precursor of enhanced reactivity facilitated precise tuning of the photoluminescence color of the resulting nanocrystals in the spectral range from ca. 730 to 530 nm with photoluminescence quantum yield (PLQY) varying from 20 to 40%. The fabricated Ag-In-S and Ag-In-Zn-S nanocrystals exhibited the longest, reported to date, photoluminescence lifetimes of ∼9.4 and ∼1.4 μs, respectively. It was also demonstrated for the first time that ternary (Ag-In-S) and quaternary (Ag-In-Zn-S) nanocrystals could be applied as efficient photocatalysts, active under visible light (green) illumination, in the reaction of aldehydes reduction to alcohols.

Synthetic Ligand Selection Affects Stoichiometry, Carrier Dynamics, and Trapping in CuInSe2 Nanocrystals

CuInSe₂ nanocrystals exhibit tunable near-infrared bandgaps that bolster utility in photovoltaic applications as well as offer potential as substitutes for more toxic Cd- and Pb-based semiconductor compositions. However, they can present a variety of defect states and unusual photophysics. Here, we examine the effects of ligand composition (oleylamine, diphenylphosphine, and tributylphosphine) on carrier dynamics in these materials. Via spectroscopic measurements such as photoluminescence and transient absorption, we find that ligands present during the synthesis of CuInSe₂ nanocrystals impart nonradiative electronic states which compete with radiative recombination and give rise to low photoluminescence quantum yields. We characterize the nature of these defect states (hole vs electron traps) and investigate whether they exist at the surface or interior of the nanocrystals. Carrier lifetimes are highly dependent on ligand identity where oleylamine-capped nanocrystals exhibit rapid trapping (<20 ps) followed by diphenylphosphine (<500 ps) and finally tributylphosphine (>2 ns). A majority of carrier population localizes at indium copper antisites (electrons), copper vacancies (holes), or surface traps (electrons and/or holes), all of which are nonemissive.

Optical and Magneto-Optical Properties of Donor-Bound Excitons in Vacancy-Engineered Colloidal Nanocrystals

Controlled insertion of electronic states within the band gap of semiconductor nanocrystals (NCs) is a powerful tool for tuning their physical properties. One compelling example is II-VI NCs incorporating heterovalent coinage metals in which hole capture produces acceptor-bound excitons. To date, the opposite donor-bound exciton scheme has not been realized because of the unavailability of suitable donor dopants. Here, we produce a model system for donor-bound excitons in CdSeS NCs engineered with sulfur vacancies (V_S) that introduce a donor state below the conduction band (CB), resulting in long-lived intragap luminescence. V_S-localized electrons are almost unaffected by trapping, and suppression of thermal quenching boosts the emission efficiency to 85%. Magneto-optical measurements indicate that the V_S are not magnetically coupled to the NC bands and that the polarization properties are determined by the spin of the valence-band photohole, whose spin flip is massively slowed down due to suppressed exchange interaction with the donor-localized electron.

Unusual Spectral Diffusion of Single CuInS2 Quantum Dots Sheds Light on the Mechanism of Radiative Decay

The luminescence of CuInS₂ quantum dots (QDs) is slower and spectrally broader than that of many other types of QDs. The origin of this anomalous behavior is still under debate. Single-QD experiments could help settle this debate, but studies by different groups have yielded conflicting results. Here, we study the photophysics of single core-only CuInS₂ and core/shell CuInS₂/CdS QDs. Both types of single QDs exhibit broad PL spectra with fluctuating peak position and single-exponential photoluminescence decay with a slow but fluctuating lifetime. Spectral diffusion of CuInS₂-based QDs is qualitatively and quantitatively different from CdSe-based QDs. The differences reflect the dipole moment of the CuInS₂ excited state and hole localization on a preferred site in the QD. Our results unravel the highly dynamic photophysics of CuInS₂ QDs and highlight the power of the analysis of single-QD property fluctuations.

Recent research on the luminous mechanism, synthetic strategies, and applications of CuInS2 quantum dots

We discuss the synthesis and luminescence mechanisms of CuInS₂ QDs, the strategies to improve their luminous performance and their potential application in light-emitting devices, solar energy conversion, and the biomedical field.

FRET-Based Analysis of AgInS2/ZnAgInS/ZnS Quantum Dot Recombination Dynamics

Ternary quantum dots (QDs) are very promising nanomaterials with a range of potential applications in photovoltaics, light-emitting devices, and biomedicine. Despite quite intensive studies of ternary QDs over the last years, the specific relaxation channels involved in their emission mechanisms are still poorly understood, particularly in the corresponding core-shell nanostructures. In the present work, we have studied the recombination pathways of AgInS₂ QDs stabilized with the ZnAgInS alloy layer and the ZnS shell (AIS/ZAIS/ZnS QDs) using time-resolved fluorescence spectroscopy. We have also investigated FRET in complexes of AIS/ZAIS/ZnS QDs and cyanine dyes with the absorption bands overlapping in the different regions of the QD emission spectrum, which allowed us to selectively quench the radiative transitions of the QDs. Our studies have demonstrated that FRET from QDs to dyes results in decreasing of all QD PL decay components with the shortest lifetime decreasing the most and the longest one decreasing the least. This research presents important approaches for the investigation of ternary QD luminescence mechanisms by the selective quenching of recombination pathways. These studies are also essential for potential applications of ternary QDs in photodynamic therapy, multiplex analysis, and time-resolved FRET sensing.

Ligand-Induced Luminescence Transformation in AgInS2 Nanoparticles: From Defect Emission to Band-Edge Emission

I-III-VI₂ semiconductor nanoparticles are strong candidates for fluorescent materials composed of nontoxic elements substituting highly fluorescent CdSe nanoparticles. Photoluminescence of I-III-VI₂ nanoparticles essentially arise due to defect emission characterized by a broad spectral feature. Band-edge emission exhibits radiation with high monochromaticity, which can drastically expand its application range. Hence, numerous studies were conducted to realize band-edge emission. A successful observation of the band-edge emission was reported only when fabricating GaS_x or InS_x shells around AgInS₂ nanoparticles via surface trap site passivation. This study demonstrates a much easier method of providing band-edge emission from AgInS₂ nanoparticles using organic ligands of trioctylphosphine (TOP). Along with the TOP ligand formation around AgInS₂ nanoparticles, the defect emission increases once and then decreases in conjunction with the appearance of the band-edge emission. Therefore, TOP ligands can passivate carrier trapping sites for radiative recombination as well as fluorescence quenching sites.

Spectroscopic and Magneto-Optical Signatures of Cu1+ and Cu2+ Defects in Copper Indium Sulfide Quantum Dots

Colloidal quantum dots (QDs) of I-III-VI ternary compounds such as copper indium sulfide (CIS) and copper indium selenide (CISe) have been under intense investigation due to both their unusual photophysical properties and considerable technological utility. These materials feature a toxic-element-free composition, a tunable bandgap that covers near-infrared and visible spectral energies, and a highly efficient photoluminescence (PL) whose spectrum is located in the reabsorption-free intragap region. These properties make them attractive for light-emission and light-harvesting applications including photovoltaics and luminescent solar concentrators. Despite a large body of literature on device-related studies of CISe(S) QDs, the understanding of their fundamental photophysical properties is surprisingly poor. Two particular subjects that are still heavily debated in the literature include the mechanism(s) for strong intragap emission and the reason(s) for a poorly defined (featureless) absorption edge, which often "tails" below the nominal bandgap. Here, we address these questions by conducting comprehensive spectroscopic studies of CIS QD samples with varied Cu-to-In ratios using resonant PL and PL excitation, femtosecond transient absorption, and magnetic circular dichroism measurements. These studies reveal a strong effect of stoichiometry on the concentration of Cu¹⁺ vs Cu²⁺ defects (occurring as Cu_In^″ and Cu_Cu^• species, respectively), and their effects on QD optical properties. In particular, we demonstrate that the increase in the relative amount of Cu²⁺ vs Cu¹⁺ centers suppresses intragap absorption associated with Cu¹⁺ states and sharpens band-edge absorption. In addition, we show that both Cu¹⁺ and Cu²⁺ centers are emissive but are characterized by distinct activation mechanisms and slightly different emission energies due to different crystal lattice environments. An important overall conclusion of this study is that the relative importance of the Cu²⁺ vs Cu¹⁺ emission/absorption channels can be controlled by tuning the Cu-to-In ratio, suggesting that the control of sample stoichiometry represents a powerful tool for achieving functionalities (e.g., strong intragap emission) that are not accessible with ideal, defect-free materials.

Blue Light Emitting Defective Nanocrystals Composed of Earth-Abundant Elements

Copper-based ternary (I-III-VI) chalcogenide nanocrystals (NCs) are compositionally-flexible semiconductors that do not contain lead (Pb) or cadmium (Cd). Cu-In-S NCs are the dominantly studied member of this important materials class and have been reported to contain optically-active defect states. However, there are minimal reports of In-free compositions that exhibit efficient photoluminescence (PL). Here, we report a novel solution-phase synthesis of ≈4 nm defective nanocrystals (DNCs) composed of copper, aluminum, zinc, and sulfur with ≈20 % quantum yield and an attractive PL maximum of 450 nm. Extensive spectroscopic characterization suggests the presence of highly localized electronic states resulting in reasonably fast PL decays (≈1 ns), large vibrational energy spacing, small Stokes shift, and temperature-independent PL linewidth and PL lifetime (between room temperature and ≈5 K). Furthermore, density functional theory (DFT) calculations suggest PL transitions arise from defects within a CuAl₅ S₈ crystal lattice, which supports the experimental observation of highly-localized states. The results reported here provide a new material with unique optoelectronic characteristics that is an important analog to well-explored Cu-In-S NCs.

Optoelectronic Properties of Ternary I-III-VI2 Semiconductor Nanocrystals: Bright Prospects with Elusive Origins

Colloidal nanocrystals of ternary I-III-VI₂ semiconductors are emerging as promising alternatives to Cd- and Pb-chalcogenide nanocrystals because of their inherently lower toxicity, while still offering widely tunable photoluminescence. These properties make them promising materials for a variety of applications. However, the realization of their full potential has been hindered by both their underdeveloped synthesis and the poor understanding of their optoelectronic properties, whose origins are still under intense debate. In this Perspective, we provide novel insights on the latter aspect by critically discussing the accumulated body of knowledge on I-III-VI₂ nanocrystals. From our analysis, we conclude that the luminescence in these nanomaterials most likely originates from the radiative recombination of a delocalized conduction band electron with a hole localized at the group-I cation, which results in broad bandwidths, large Stokes shifts, and long exciton lifetimes. Finally, we highlight the remaining open questions and propose experiments to address them.

Opportunities and challenges for electrochemistry in studying the electronic structure of nanocrystals

We review the state-of-the-art of determining the electronic structure of nanocrystals in thin films by electrochemistry and emphasize the benefits of correlating electrochemical with spectroscopic methods to this end.

Tuning and Probing the Distribution of Cu+ and Cu2+ Trap States Responsible for Broad-Band Photoluminescence in CuInS2 Nanocrystals

The processes that govern radiative recombination in ternary CuInS₂ (CIS) nanocrystals (NCs) have been heavily debated, but recently, several research groups have come to the same conclusion that a photoexcited electron recombines with a localized hole on a Cu-related trap state. Furthermore, it has been observed that single CIS NCs display narrower photoluminescence (PL) line widths than the ensemble, which led to the conclusion that within the ensemble there is a distribution of Cu-related trap states responsible for PL. In this work, we probe this trap-state distribution with in situ photoluminescence spectroelectrochemistry. We find that Cu²⁺ states result in individual "dark" nanocrystals, whereas Cu⁺ states result in "bright" NCs. Furthermore, we show that we can tune the PL position, intensity, and line width in a cyclic fashion by injecting or removing electrons from the trap-state distribution, thereby converting a subset of "dark" Cu²⁺ containing NCs into "bright" Cu⁺ containing NCs and vice versa. The electrochemical injection of electrons results in brightening, broadening, and a red shift of the PL, in line with the activation of a broad distribution of "dark" NCs (Cu²⁺ states) into "bright" NCs (Cu⁺ states) and a rise of the Fermi level within the ensemble trap-state distribution. The opposite trend is observed for electrochemical oxidation of Cu⁺ states into Cu²⁺. Our work shows that there is a direct correlation between the line width of the ensemble Cu⁺/Cu²⁺ trap-state distribution and the characteristic broad-band PL feature of CIS NCs and between Cu²⁺ cations in the photoexcited state (bright) and in the electrochemically oxidized ground state (dark).

Spectroelectrochemical Signatures of Surface Trap Passivation on CdTe Nanocrystals

The photoluminescence (PL) quantum yield of semiconductor nanocrystals (NCs) is hampered by in-gap trap states due to dangling orbitals on the surface of the nanocrystals. While crucial for the rational design of nanocrystals, the understanding of the exact origin of trap states remains limited. Here, we treat CdTe nanocrystal films with different metal chloride salts and we study the effect on their optical properties with in situ spectroelectrochemistry, recording both changes in absorption and photoluminescence. For untreated CdTe NC films we observe a strong increase in the PL intensity as the Fermi-level is raised electrochemically and trap states in the bandgap become occupied with electrons. Upon passivation of these in-gap states we observe an increase in the steady state PL and, for the best treatments, we observe that the PL no longer depends on the position of the Fermi level in the band gap, demonstrating the effective removal of trap states. The most effective treatment is obtained for Z-type passivation with CdCl₂, for which the steady state PL increased by a factor 40 and the PL intensity became nearly unaffected by the applied potential. X-ray Photoelectron Spectroscopy measurements show that treatment with ZnCl₂ mainly leads to X-type passivation with chloride ions, which increased the PL intensity by a factor four and made the PL less susceptible to modulation by applying a potential with respect to unpassivated nanocrystal films. We elucidate the spectroelectrochemical signatures of trap states within the bandgap and conclude that undercoordinated Te at the surface constitutes the largest contribution to in-gap trap states, but that other surface states that likely originate on Cd atoms should also be considered.

Effect of surface/interfacial defects on photo-stability of thick-shell CdZnSeS/ZnS quantum dots

High color-purity CdZnSeS alloy cores and CdZnSeS/ZnS core/shell quantum dots (QDs) with 3, 11 and 17 monolayer (ML) ZnS shells are synthesized, and the narrow emission (full-width at half-maximum: ∼21 nm) is ascribed to the high size uniformity of QDs and the narrow linewidth of single QD spectra. Ultraviolet (UV) irradiation experiments show that the photo-stabilities of the samples improve remarkably with increasing shell thickness, but the photo-stability clearly decreases when the shell thickness is further increased to 17 MLs. Spectroelectrochemical (SEC) measurements indicate that the exciton recombination of QDs is mainly affected by surface electronic traps, and the interaction between exciton recombination centers and surface traps is significantly weakened with the increase in shell thickness due to the decreased wave function overlap of the exciton and surface traps. In the case of the 17 ML shell, the reduced photo-stability is due to increased interfacial defects caused by stress release during UV illumination, which can be proved by high-resolution transmission electron microscopy images and X-ray diffraction patterns. Furthermore, based on QDs' theoretical mass calculations, a photo-stable white light-emitting diode is fabricated by encapsulating with a thick-shell QD, and an exceptional color gamut of 130% relative to the National Television Systems Committee color space can be achieved. Also, its colorimetry and photometry are discussed in detail.

Size-Dependent Band-Gap and Molar Absorption Coefficients of Colloidal CuInS2 Quantum Dots

The knowledge of the quantum dot (QD) concentration in a colloidal suspension and the quantitative understanding of the size-dependence of the band gap of QDs are of crucial importance from both applied and fundamental viewpoints. In this work, we investigate the size-dependence of the optical properties of nearly spherical wurtzite (wz) CuInS₂ (CIS) QDs in the 2.7 to 6.1 nm diameter range (polydispersity ≤10%). The QDs are synthesized by partial Cu⁺ for In³⁺ cation exchange in template Cu_{2- x}S nanocrystals, which yields CIS QDs with very small composition variations (In/Cu = 0.91 ± 0.11), regardless of their sizes. These well-defined QDs are used to investigate the size-dependence of the band gap of wz CIS QDs. A sizing curve is also constructed for chalcopyrite CIS QDs by collecting and reanalyzing literature data. We observe that both sizing curves follow primarily a 1/ d dependence. Moreover, the molar absorption coefficients and the absorption cross-section per CIS formula unit, both at 3.1 eV and at the band gap, are analyzed. The results demonstrate that the molar absorption coefficients of CIS QDs follow a power law at the first exciton transition energy (ε _E1 = 5208 d^2.45) and scale with the QD volume at 3.1 eV. This latter observation implies that the absorption cross-section per unit cell at 3.1 eV is size-independent and therefore can be estimated from bulk optical constants. These results also demonstrate that the molar absorption coefficients at 3.1 eV are more reliable for analytical purposes, since they are less sensitive to size and shape dispersion.

Promising Anodic Electrochemiluminescence of Nontoxic Core/Shell CuInS2/ZnS Nanocrystals in Aqueous Medium and Its Biosensing Potential

Copper indium sulfide (CuInS₂, CIS) nanocrystals (NCs) are a promising solution to the toxic issue of Cd- and Pb-based NCs. Herein, electrochemiluminescence (ECL) of CIS NCs in aqueous medium is investigated for the first time with l-glutathione and sodium citrate-stabilized water-soluble CIS/ZnS NCs as model. The CIS/ZnS NCs can be oxidized to hole-injected states via electrochemically injecting holes into valence band at 0.55 and 0.94 V (vs Ag/AgCl), respectively. The hole-injected state around 0.94 V can bring out efficient oxidative-reduction ECL with a similar color to Ru(bpy)₃²⁺ in the presence of tri- n-propylamine (TPrA) and enable CIS/ZnS NCs promising ECL tags with l-glutathione as linker for labeling. The ECL of CIS/ZnS NCs/TPrA can be utilized to determine vascular endothelial growth factor (VEGF) from 0.10 to 1000 pM with the limit of detection at 0.050 pM (S/N = 3). Although the hole-injected state around 0.55 V is generated ahead of oxidation of TPrA and fails to bring out coreactant ECL, annihilation ECL proves that both hole-injected states generated, at 0.55 and 0.94 V, can be involved in electrochemical redox-induced radiative charge transfer by directly stepping CIS/ZnS NCs from electron-injecting potential to hole-injecting potential. CIS/ZnS NCs are promising nontoxic electrochemiluminophores with lowered ECL triggering potential around 0.55 V for less electrochemical interference upon the development of coreactant.

Excitonic pathway to photoinduced magnetism in colloidal nanocrystals with nonmagnetic dopants

Electronic doping of colloidal semiconductor nanostructures holds promise for future device concepts in optoelectronic and spin-based technologies. Ag⁺ is an emerging electronic dopant in III-V and II-VI nanostructures, introducing intragap electronic states optically coupled to the host conduction band. With its full 4d shell Ag⁺ is nonmagnetic, and the dopant-related luminescence is ascribed to decay of the conduction-band electron following transfer of the photoexcited hole to Ag⁺. This optical activation process and the associated modification of the electronic configuration of Ag⁺ remain unclear. Here, we trace a comprehensive picture of the excitonic process in Ag-doped CdSe nanocrystals and demonstrate that, in contrast to expectations, capture of the photohole leads to conversion of Ag⁺ to paramagnetic Ag²⁺. The process of exciton recombination is thus inextricably tied to photoinduced magnetism. Accordingly, we observe strong optically activated magnetism and diluted magnetic semiconductor behaviour, demonstrating that optically switchable magnetic nanomaterials can be obtained by exploiting excitonic processes involving nonmagnetic impurities.

From Large-Scale Synthesis to Lighting Device Applications of Ternary I-III-VI Semiconductor Nanocrystals: Inspiring Greener Material Emitters

Quantum dots with fabulous size-dependent and color-tunable emissions remained as one of the most exciting inventories in nanomaterials for the last 3 decades. Even though a large number of such dot nanocrystals were developed, CdSe still remained as unbeatable and highly trusted lighting nanocrystals. Beyond these, the ternary I-III-VI family of nanocrystals emerged as the most widely accepted greener materials with efficient emissions tunable in visible as well as NIR spectral windows. These bring the high possibility of their implementation as lighting materials acceptable to the community and also to the environment. Keeping these in mind, in this Perspective, the latest developments of ternary I-III-VI nanocrystals from their large-scale synthesis to device applications are presented. Incorporating ZnS, tuning the composition, mixing with other nanocrystals, and doping with Mn ions, light-emitting devices of single color as well as for generating white light emissions are also discussed. In addition, the future prospects of these materials in lighting applications are also proposed.