1
|
Huang J, Li Z, Bi X, Tang M, Qiu C, Qin F, Yuan H. Manipulation of Cooper-Pair Tunneling via Domain Structure in a van der Waals Ferromagnetic Josephson Junction. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2314190. [PMID: 38885314 DOI: 10.1002/adma.202314190] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/26/2023] [Revised: 06/08/2024] [Indexed: 06/20/2024]
Abstract
Ferromagnetic Josephson junctions play a key role in understanding the interplay between superconductivity and ferromagnetism in condensed matter physics. The magnetic domain structures of the ferromagnet in such junctions can significantly affect the tunneling of the superconducting Cooper pairs due to the strong interactions between Cooper pairs and local magnetic moments in the ferromagnetic tunnel barrier. However, the underlying microscopic mechanism of relevant quasiparticle tunneling processes with magnetic domain structures remains largely unexplored. Here, the manipulation of Cooper-pair tunneling in the NbSe2/Cr2Ge2Te6/NbSe2 ferromagnetic Josephson junction is demonstrated by using a multidomain ferromagnetic barrier with anisotropic magnetic moments. The evolution of up-, down-magnetized domain and Bloch domain structures in Cr2Ge2Te6 barrier under external magnetic fields leads to the enhancement of the critical tunneling supercurrent and an unconventional dual-peak feature with two local maxima in the field-dependent critical current curve. The phenomenon of magnetic-field-modulated critical tunneling supercurrent can be well explained by the competition between the coherence length of tunneling Cooper pairs and the size of magnetic domain walls in Cr2Ge2Te6 barrier. This kind of ferromagnetic Josephson junction provides an intriguing material system for manipulating Cooper-pair tunneling by tuning the local magnetic moments within magnetic Josephson junction devices.
Collapse
Affiliation(s)
- Junwei Huang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210000, China
| | - Zeya Li
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210000, China
| | - Xiangyu Bi
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210000, China
| | - Ming Tang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210000, China
| | - Caiyu Qiu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210000, China
| | - Feng Qin
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210000, China
| | - Hongtao Yuan
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210000, China
| |
Collapse
|
2
|
Pham PV, Mai TH, Dash SP, Biju V, Chueh YL, Jariwala D, Tung V. Transfer of 2D Films: From Imperfection to Perfection. ACS NANO 2024; 18:14841-14876. [PMID: 38810109 PMCID: PMC11171780 DOI: 10.1021/acsnano.4c00590] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/14/2024] [Revised: 04/03/2024] [Accepted: 04/12/2024] [Indexed: 05/31/2024]
Abstract
Atomically thin 2D films and their van der Waals heterostructures have demonstrated immense potential for breakthroughs and innovations in science and technology. Integrating 2D films into electronics and optoelectronics devices and their applications in electronics and optoelectronics can lead to improve device efficiencies and tunability. Consequently, there has been steady progress in large-area 2D films for both front- and back-end technologies, with a keen interest in optimizing different growth and synthetic techniques. Parallelly, a significant amount of attention has been directed toward efficient transfer techniques of 2D films on different substrates. Current methods for synthesizing 2D films often involve high-temperature synthesis, precursors, and growth stimulants with highly chemical reactivity. This limitation hinders the widespread applications of 2D films. As a result, reports concerning transfer strategies of 2D films from bare substrates to target substrates have proliferated, showcasing varying degrees of cleanliness, surface damage, and material uniformity. This review aims to evaluate, discuss, and provide an overview of the most advanced transfer methods to date, encompassing wet, dry, and quasi-dry transfer methods. The processes, mechanisms, and pros and cons of each transfer method are critically summarized. Furthermore, we discuss the feasibility of these 2D film transfer methods, concerning their applications in devices and various technology platforms.
Collapse
Affiliation(s)
- Phuong V. Pham
- Department
of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - The-Hung Mai
- Department
of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - Saroj P. Dash
- Department
of Microtechnology and Nanoscience, Chalmers
University of Technology, Gothenburg 41296, Sweden
| | - Vasudevanpillai Biju
- Research
Institute for Electronic Science, Hokkaido
University, Hokkaido 001-0020, Japan
| | - Yu-Lun Chueh
- Department
of Materials Science and Engineering, National
Tsing Hua University, Hsinchu 30013, Taiwan
| | - Deep Jariwala
- Department
of Electrical and Systems Engineering, University
of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Vincent Tung
- Department
of Chemical System Engineering, School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| |
Collapse
|
3
|
Liu A, Zhang X, Liu Z, Li Y, Peng X, Li X, Qin Y, Hu C, Qiu Y, Jiang H, Wang Y, Li Y, Tang J, Liu J, Guo H, Deng T, Peng S, Tian H, Ren TL. The Roadmap of 2D Materials and Devices Toward Chips. NANO-MICRO LETTERS 2024; 16:119. [PMID: 38363512 PMCID: PMC10873265 DOI: 10.1007/s40820-023-01273-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Accepted: 10/30/2023] [Indexed: 02/17/2024]
Abstract
Due to the constraints imposed by physical effects and performance degradation, silicon-based chip technology is facing certain limitations in sustaining the advancement of Moore's law. Two-dimensional (2D) materials have emerged as highly promising candidates for the post-Moore era, offering significant potential in domains such as integrated circuits and next-generation computing. Here, in this review, the progress of 2D semiconductors in process engineering and various electronic applications are summarized. A careful introduction of material synthesis, transistor engineering focused on device configuration, dielectric engineering, contact engineering, and material integration are given first. Then 2D transistors for certain electronic applications including digital and analog circuits, heterogeneous integration chips, and sensing circuits are discussed. Moreover, several promising applications (artificial intelligence chips and quantum chips) based on specific mechanism devices are introduced. Finally, the challenges for 2D materials encountered in achieving circuit-level or system-level applications are analyzed, and potential development pathways or roadmaps are further speculated and outlooked.
Collapse
Affiliation(s)
- Anhan Liu
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China
| | - Xiaowei Zhang
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China
| | - Ziyu Liu
- School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China
| | - Yuning Li
- School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing, 100044, People's Republic of China
| | - Xueyang Peng
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China
- School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Xin Li
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Yue Qin
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Chen Hu
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China
- School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Yanqing Qiu
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China
- School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Han Jiang
- School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China
| | - Yang Wang
- School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China
| | - Yifan Li
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China
| | - Jun Tang
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Jun Liu
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Hao Guo
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China.
| | - Tao Deng
- School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing, 100044, People's Republic of China.
| | - Songang Peng
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China.
- IMECAS-HKUST-Joint Laboratory of Microelectronics, Beijing, 100029, People's Republic of China.
| | - He Tian
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China.
| | - Tian-Ling Ren
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China.
| |
Collapse
|
4
|
Jin G, Kim SH, Han HJ. Synthesis and Future Electronic Applications of Topological Nanomaterials. Int J Mol Sci 2023; 25:400. [PMID: 38203574 PMCID: PMC10779379 DOI: 10.3390/ijms25010400] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/27/2023] [Revised: 12/19/2023] [Accepted: 12/22/2023] [Indexed: 01/12/2024] Open
Abstract
Over the last ten years, the discovery of topological materials has opened up new areas in condensed matter physics. These materials are noted for their distinctive electronic properties, unlike conventional insulators and metals. This discovery has not only spurred new research areas but also offered innovative approaches to electronic device design. A key aspect of these materials is now that transforming them into nanostructures enhances the presence of surface or edge states, which are the key components for their unique electronic properties. In this review, we focus on recent synthesis methods, including vapor-liquid-solid (VLS) growth, chemical vapor deposition (CVD), and chemical conversion techniques. Moreover, the scaling down of topological nanomaterials has revealed new electronic and magnetic properties due to quantum confinement. This review covers their synthesis methods and the outcomes of topological nanomaterials and applications, including quantum computing, spintronics, and interconnects. Finally, we address the materials and synthesis challenges that need to be resolved prior to the practical application of topological nanomaterials in advanced electronic devices.
Collapse
Affiliation(s)
- Gangtae Jin
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853, USA;
| | - Seo-Hyun Kim
- Department of Environment and Energy Engineering, Sungshin Women’s University, Seoul 01133, Republic of Korea;
| | - Hyeuk-Jin Han
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853, USA;
- Department of Environment and Energy Engineering, Sungshin Women’s University, Seoul 01133, Republic of Korea;
| |
Collapse
|
5
|
Zhou Z, Hou F, Huang X, Wang G, Fu Z, Liu W, Yuan G, Xi X, Xu J, Lin J, Gao L. Stack growth of wafer-scale van der Waals superconductor heterostructures. Nature 2023; 621:499-505. [PMID: 37674075 DOI: 10.1038/s41586-023-06404-x] [Citation(s) in RCA: 13] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/05/2022] [Accepted: 07/05/2023] [Indexed: 09/08/2023]
Abstract
Two-dimensional (2D) van der Waals (vdW) heterostructures have attracted considerable attention in recent years1-5. The most widely used method of fabrication is to stack mechanically exfoliated micrometre-sized flakes6-18, but this process is not scalable for practical applications. Despite thousands of 2D materials being created, using various stacking combinations1-3,19-21, hardly any large 2D superconductors can be stacked intact into vdW heterostructures, greatly restricting the applications for such devices. Here we report a high-to-low temperature strategy for controllably growing stacks of multiple-layered vdW superconductor heterostructure (vdWSH) films at a wafer scale. The number of layers of 2D superconductors in the vdWSHs can be precisely controlled, and we have successfully grown 27 double-block, 15 triple-block, 5 four-block and 3 five-block vdWSH films (where one block represents one 2D material). Morphological, spectroscopic and atomic-scale structural analyses reveal the presence of parallel, clean and atomically sharp vdW interfaces on a large scale, with very little contamination between neighbouring layers. The intact vdW interfaces allow us to achieve proximity-induced superconductivity and superconducting Josephson junctions on a centimetre scale. Our process for making multiple-layered vdWSHs can easily be generalized to other situations involving 2D materials, potentially accelerating the design of next-generation functional devices and applications22-24.
Collapse
Affiliation(s)
- Zhenjia Zhou
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Fuchen Hou
- Department of Physics and Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen, China
- Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong), Shenzhen, China
| | - Xianlei Huang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Gang Wang
- Department of Physics and Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen, China
- Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong), Shenzhen, China
| | - Zihao Fu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Weilin Liu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Guowen Yuan
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Xiaoxiang Xi
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Jie Xu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
| | - Junhao Lin
- Department of Physics and Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen, China.
- Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong), Shenzhen, China.
| | - Libo Gao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
| |
Collapse
|
6
|
Zhao C, Yi X, Chen Q, Yan C, Wang S. Josephson Effect in NbS 2 van der Waals Junctions. J Phys Chem Lett 2022; 13:10811-10815. [PMID: 36378687 DOI: 10.1021/acs.jpclett.2c02927] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
van der Waals (vdW) Josephson junctions can possibly accelerate the development of an advanced superconducting device that utilizes the unique properties of two-dimensional (2D) transition metal dichalcogenide (TMD) superconductors such as spin-orbit coupling and spin-valley locking. Here, we fabricate vertically stacked NbS2/NbS2 Josephson junctions using a modified all-dry transfer technique and characterize the device performance via systematic low-temperature transport measurements. The experimental results show that the superconducting transition temperature of the NbS2/NbS2 Josephson junction is 5.84 K, and the critical current density reaches 3975 A/cm2 at 2 K. Moreover, we extract a superconducting energy gap Δ = 0.58 meV, which is considerably smaller than that expected from the single band s-wave Bardeen-Cooper-Schrieffer (BCS) model (Δ = 0.89 meV).
Collapse
Affiliation(s)
- Chuanwen Zhao
- MOE Key Laboratory of Fundamental Physical Quantities Measurement & Hubei Key Laboratory of Gravitation and Quantum Physics, PGMF and School of Physics, Huazhong University of Science and Technology, Wuhan430074, China
| | - Xin Yi
- MOE Key Laboratory of Fundamental Physical Quantities Measurement & Hubei Key Laboratory of Gravitation and Quantum Physics, PGMF and School of Physics, Huazhong University of Science and Technology, Wuhan430074, China
| | - Qiao Chen
- MOE Key Laboratory of Fundamental Physical Quantities Measurement & Hubei Key Laboratory of Gravitation and Quantum Physics, PGMF and School of Physics, Huazhong University of Science and Technology, Wuhan430074, China
| | - Chengyu Yan
- MOE Key Laboratory of Fundamental Physical Quantities Measurement & Hubei Key Laboratory of Gravitation and Quantum Physics, PGMF and School of Physics, Huazhong University of Science and Technology, Wuhan430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan430074, China
| | - Shun Wang
- MOE Key Laboratory of Fundamental Physical Quantities Measurement & Hubei Key Laboratory of Gravitation and Quantum Physics, PGMF and School of Physics, Huazhong University of Science and Technology, Wuhan430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan430074, China
| |
Collapse
|
7
|
Jian Y, Feng Q, Zhong J, Peng H, Duan J. Superconducting quantum interference effect in NbSe 2/NbSe 2van der Waals junctions. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:405702. [PMID: 35853445 DOI: 10.1088/1361-648x/ac825f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/21/2022] [Accepted: 07/19/2022] [Indexed: 06/15/2023]
Abstract
Layered materials with exotic properties, such as superconducting, ferromagnetic, and so on, have attracted broad interest. The advances in van der Waals (vdW) stacking technology have enabled the fabrication of numerous types of junction structures. The dangling-bond-free interface provides an ideal platform to generate and probe various physics phenomena. Typical progress is the realization of vdW Josephson junctions with high supercurrent transparency constructed of two NbSe2layers. Here we report the observation of periodic oscillations of the voltage drop across a NbSe2/NbSe2vdW junctions under an in-plane magnetic field. The voltage-drop oscillations come from the interface and the magnitude of the oscillations has a non-monotonic temperature dependence which increases first with increasing temperature. These features make the oscillations different from the modulation of the critical current of a Josephson junction by the magnetic field and the Little-Parks effect. The oscillations are determined to be generated by the quantum interference effect between two superconducting junctions formed between the two NbSe2layers. Our results thus provide a unique way to make an in-plane superconducting quantum interference device that can survive under a high magnetic field utilizing the Ising-paring nature of the NbSe2.
Collapse
Affiliation(s)
- Yu Jian
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, People's Republic of China
- Micronano Center, Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Qi Feng
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, People's Republic of China
- Micronano Center, Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Jinrui Zhong
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, People's Republic of China
- Micronano Center, Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Huimin Peng
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, People's Republic of China
- Micronano Center, Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Junxi Duan
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, People's Republic of China
- Micronano Center, Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, People's Republic of China
| |
Collapse
|
8
|
Baidoo JK, Choi SH, Agyapong-Fordjour FOT, Boandoh S, Yun SJ, Adofo LA, Ben-Smith A, Kim YI, Jin JW, Jung MH, Jeong HY, Kim YM, Lee YH, Kim SM, Kim KK. Sequential Growth of Vertical Transition-Metal Dichalcogenide Heterostructures on Rollable Aluminum Foil. ACS NANO 2022; 16:8851-8859. [PMID: 35713417 DOI: 10.1021/acsnano.1c10233] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Vertical van der Waals heterostructures (vdWhs), which are made by layer-by-layer stacking of two-dimensional (2D) materials, offer great opportunities for the development of extraordinary physics and devices such as topological superconductivity, robust quantum Hall phenomenon, electron-hole pair condensation, Coulomb drag, and tunneling devices. However, the size of vdWhs is still limited to the order of a few micrometers, which restricts the large-scale roll-to-roll processes for industrial applications. Herein, we report the sequential growth of a 14 in. vertical vdWhs on a rollable Al foil via chemical vapor deposition. By supplying chalcogen precursors to liquid transition-metal precursor-coated Al foils, we grew a wide range of individual 2D transition-metal dichalcogenide (TMD) films, including MoS2, VS2, ReS2, WS2, SnS2, WSe2, and vanadium-doped MoS2. Additionally, by repeating the growth process, we successfully achieved the layer-by-layer growth of ReS2/MoS2 and SnS2/ReS2/MoS2 vdWhs. The chemically inert Al native oxide layer inhibits the diffusion of chalcogen and metal atoms into Al foils, allowing for the growth of diverse TMDs and their vdWhs. The conductive Al substrate enables the effective use of vdWhs/Al as a hydrogen evolution reaction electrocatalyst with a transfer-free process. This work provides a robust route for the commercialization of 2D TMDs and their vdWhs at a low cost.
Collapse
Affiliation(s)
- Joseph Kojo Baidoo
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Soo Ho Choi
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
| | | | - Stephen Boandoh
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
| | - Seok Joon Yun
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
| | - Laud Anim Adofo
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Andrew Ben-Smith
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Yong In Kim
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Jeong Won Jin
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Min-Hyoung Jung
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Hu Young Jeong
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Young-Min Kim
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Soo Min Kim
- Department of Chemistry, Sookmyung Women's University, Seoul 14072, Republic of Korea
| | - Ki Kang Kim
- Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| |
Collapse
|
9
|
The field-free Josephson diode in a van der Waals heterostructure. Nature 2022; 604:653-656. [PMID: 35478238 DOI: 10.1038/s41586-022-04504-8] [Citation(s) in RCA: 53] [Impact Index Per Article: 26.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/29/2021] [Accepted: 02/02/2022] [Indexed: 11/08/2022]
Abstract
The superconducting analogue to the semiconducting diode, the Josephson diode, has long been sought with multiple avenues to realization being proposed by theorists1-3. Showing magnetic-field-free, single-directional superconductivity with Josephson coupling, it would serve as the building block for next-generation superconducting circuit technology. Here we realized the Josephson diode by fabricating an inversion symmetry breaking van der Waals heterostructure of NbSe2/Nb3Br8/NbSe2. We demonstrate that even without a magnetic field, the junction can be superconducting with a positive current while being resistive with a negative current. The ΔIc behaviour (the difference between positive and negative critical currents) with magnetic field is symmetric and Josephson coupling is proved through the Fraunhofer pattern. Also, stable half-wave rectification of a square-wave excitation was achieved with a very low switching current density, high rectification ratio and high robustness. This non-reciprocal behaviour strongly violates the known Josephson relations and opens the door to discover new mechanisms and physical phenomena through integration of quantum materials with Josephson junctions, and provides new avenues for superconducting quantum devices.
Collapse
|
10
|
Wu Y, Francisco B, Chen Z, Wang W, Zhang Y, Wan C, Han X, Chi H, Hou Y, Lodesani A, Yin G, Liu K, Cui YT, Wang KL, Moodera JS. A Van der Waals Interface Hosting Two Groups of Magnetic Skyrmions. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2110583. [PMID: 35218078 DOI: 10.1002/adma.202110583] [Citation(s) in RCA: 16] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/27/2021] [Revised: 01/26/2022] [Indexed: 06/14/2023]
Abstract
Multiple magnetic skyrmion phases add an additional degree of freedom for skyrmion-based ultrahigh-density spin memory devices. Extending the field to 2D van der Waals magnets is a rewarding challenge, where the realizable degree of freedoms (e.g., thickness, twist angle, and electrical gating) and high skyrmion density result in intriguing new properties and enhanced functionality. In this work, a van der Waals interface, formed by two 2D ferromagnets Cr2 Ge2 Te6 and Fe3 GeTe2 with a Curie temperature of ≈65 and ≈205 K, respectively, hosting two groups of magnetic skyrmions, is reported. Two sets of topological Hall effect signals are observed below 6s0 K when Cr2 Ge2 Te6 is magnetically ordered. These two groups of skyrmions are directly imaged using magnetic force microscopy, and supported by micromagnetic simulations. Interestingly, the magnetic skyrmions persist in the heterostructure with zero applied magnetic field. The results are promising for the realization of skyrmionic devices based on van der Waals heterostructures hosting multiple skyrmion phases.
Collapse
Affiliation(s)
- Yingying Wu
- Francis Bitter Magnet Laboratory and Plasma Science and Fusion Center, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Brian Francisco
- Department of Physics and Astronomy, University of California, Riverside, CA, 92521, USA
| | - Zhijie Chen
- Department of Physics, Georgetown University, Washington, D.C., 20057, USA
| | - Wei Wang
- Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing, 211816, China
| | - Yu Zhang
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Caihua Wan
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Xiufeng Han
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Hang Chi
- Francis Bitter Magnet Laboratory and Plasma Science and Fusion Center, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
- U.S. Army CCDC Army Research Laboratory, Adelphi, MD, 20783, USA
| | - Yasen Hou
- Francis Bitter Magnet Laboratory and Plasma Science and Fusion Center, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Alessandro Lodesani
- Francis Bitter Magnet Laboratory and Plasma Science and Fusion Center, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Gen Yin
- Department of Physics, Georgetown University, Washington, D.C., 20057, USA
| | - Kai Liu
- Department of Physics, Georgetown University, Washington, D.C., 20057, USA
| | - Yong-Tao Cui
- Department of Physics and Astronomy, University of California, Riverside, CA, 92521, USA
| | - Kang L Wang
- Department of Electrical and Computer Engineering, University of California, Los Angeles, Los Angeles, CA, 90095, USA
| | - Jagadeesh S Moodera
- Francis Bitter Magnet Laboratory and Plasma Science and Fusion Center, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
- Physics Department, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| |
Collapse
|
11
|
Alfieri A, Anantharaman SB, Zhang H, Jariwala D. Nanomaterials for Quantum Information Science and Engineering. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2109621. [PMID: 35139247 DOI: 10.1002/adma.202109621] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2021] [Revised: 02/04/2022] [Indexed: 06/14/2023]
Abstract
Quantum information science and engineering (QISE)-which entails the use of quantum mechanical states for information processing, communications, and sensing-and the area of nanoscience and nanotechnology have dominated condensed matter physics and materials science research in the 21st century. Solid-state devices for QISE have, to this point, predominantly been designed with bulk materials as their constituents. This review considers how nanomaterials (i.e., materials with intrinsic quantum confinement) may offer inherent advantages over conventional materials for QISE. The materials challenges for specific types of qubits, along with how emerging nanomaterials may overcome these challenges, are identified. Challenges for and progress toward nanomaterials-based quantum devices are condidered. The overall aim of the review is to help close the gap between the nanotechnology and quantum information communities and inspire research that will lead to next-generation quantum devices for scalable and practical quantum applications.
Collapse
Affiliation(s)
- Adam Alfieri
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Surendra B Anantharaman
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Huiqin Zhang
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Deep Jariwala
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| |
Collapse
|
12
|
Lee J, Lee W, Kim GY, Choi YB, Park J, Jang S, Gu G, Choi SY, Cho GY, Lee GH, Lee HJ. Twisted van der Waals Josephson Junction Based on a High- Tc Superconductor. NANO LETTERS 2021; 21:10469-10477. [PMID: 34881903 DOI: 10.1021/acs.nanolett.1c03906] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Stacking two-dimensional van der Waals (vdW) materials rotated with respect to each other show versatility for studying exotic quantum phenomena. In particular, anisotropic layered materials have great potential for such twistronics applications, providing high tunability. Here, we report anisotropic superconducting order parameters in twisted Bi2Sr2CaCu2O8+x (Bi-2212) vdW junctions with an atomically clean vdW interface, achieved using the microcleave-and-stack technique. The vdW junctions with twist angles of 0° and 90° showed the maximum Josephson coupling, comparable to that of intrinsic Josephson junctions. As the twist angle approaches 45°, Josephson coupling is suppressed, and eventually disappears at 45°. The observed twist angle dependence of the Josephson coupling can be explained quantitatively by theoretical calculation with the d-wave superconducting order parameter of Bi-2212 and finite tunneling incoherence of the junction. Our results revealed the anisotropic nature of Bi-2212 and provided a novel fabrication technique for vdW-based twistronics platforms compatible with air-sensitive vdW materials.
Collapse
Affiliation(s)
- Jongyun Lee
- Department of Physics, Pohang University of Science and Technology, Pohang 37673, Korea
| | - Wonjun Lee
- Department of Physics, Pohang University of Science and Technology, Pohang 37673, Korea
| | - Gi-Yeop Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 37673, Korea
- Materials Imaging & Analysis Center, Pohang University of Science and Technology, Pohang 37673, Korea
| | - Yong-Bin Choi
- Department of Physics, Pohang University of Science and Technology, Pohang 37673, Korea
| | - Jinho Park
- Department of Physics, Pohang University of Science and Technology, Pohang 37673, Korea
| | - Seong Jang
- Department of Physics, Pohang University of Science and Technology, Pohang 37673, Korea
| | - Genda Gu
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Si-Young Choi
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 37673, Korea
- Materials Imaging & Analysis Center, Pohang University of Science and Technology, Pohang 37673, Korea
| | - Gil Young Cho
- Department of Physics, Pohang University of Science and Technology, Pohang 37673, Korea
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Korea
- Asia Pacific Center for Theoretical Physics, Pohang 37673, Korea
| | - Gil-Ho Lee
- Department of Physics, Pohang University of Science and Technology, Pohang 37673, Korea
- Asia Pacific Center for Theoretical Physics, Pohang 37673, Korea
| | - Hu-Jong Lee
- Department of Physics, Pohang University of Science and Technology, Pohang 37673, Korea
| |
Collapse
|
13
|
Zhao Y, Gobbi M, Hueso LE, Samorì P. Molecular Approach to Engineer Two-Dimensional Devices for CMOS and beyond-CMOS Applications. Chem Rev 2021; 122:50-131. [PMID: 34816723 DOI: 10.1021/acs.chemrev.1c00497] [Citation(s) in RCA: 25] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/27/2022]
Abstract
Two-dimensional materials (2DMs) have attracted tremendous research interest over the last two decades. Their unique optical, electronic, thermal, and mechanical properties make 2DMs key building blocks for the fabrication of novel complementary metal-oxide-semiconductor (CMOS) and beyond-CMOS devices. Major advances in device functionality and performance have been made by the covalent or noncovalent functionalization of 2DMs with molecules: while the molecular coating of metal electrodes and dielectrics allows for more efficient charge injection and transport through the 2DMs, the combination of dynamic molecular systems, capable to respond to external stimuli, with 2DMs makes it possible to generate hybrid systems possessing new properties by realizing stimuli-responsive functional devices and thereby enabling functional diversification in More-than-Moore technologies. In this review, we first introduce emerging 2DMs, various classes of (macro)molecules, and molecular switches and discuss their relevant properties. We then turn to 2DM/molecule hybrid systems and the various physical and chemical strategies used to synthesize them. Next, we discuss the use of molecules and assemblies thereof to boost the performance of 2D transistors for CMOS applications and to impart diverse functionalities in beyond-CMOS devices. Finally, we present the challenges, opportunities, and long-term perspectives in this technologically promising field.
Collapse
Affiliation(s)
- Yuda Zhao
- University of Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, F-67000 Strasbourg, France.,School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, 310027 Hangzhou, People's Republic of China
| | - Marco Gobbi
- Centro de Fisica de Materiales (CSIC-UPV/EHU), Paseo Manuel de Lardizabal 5, E-20018 Donostia-San Sebastián, Spain.,CIC nanoGUNE, E-20018 Donostia-San Sebastian, Basque Country, Spain.,IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Spain
| | - Luis E Hueso
- CIC nanoGUNE, E-20018 Donostia-San Sebastian, Basque Country, Spain.,IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Spain
| | - Paolo Samorì
- University of Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, F-67000 Strasbourg, France
| |
Collapse
|
14
|
Chou YZ, Wu F, Sau JD, Das Sarma S. Correlation-Induced Triplet Pairing Superconductivity in Graphene-Based Moiré Systems. PHYSICAL REVIEW LETTERS 2021; 127:217001. [PMID: 34860110 DOI: 10.1103/physrevlett.127.217001] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/08/2021] [Accepted: 10/12/2021] [Indexed: 06/13/2023]
Abstract
Motivated by the possible non-spin-singlet superconductivity in the magic-angle twisted trilayer graphene experiment, we investigate the triplet-pairing superconductivity arising from a correlation-induced spin-fermion model of Dirac fermions with spin, valley, and sublattice degrees of freedom. We find that the f-wave pairing is favored due to the valley-sublattice structure, and the superconducting state is time-reversal symmetric, fully gapped, and nontopological. With a small in-plane magnetic field, the superconducting state becomes partially polarized, and the transition temperature can be slightly enhanced. Our results apply qualitatively to Dirac fermions for the triplet-pairing superconductivity in graphene-based moiré systems, which is fundamentally distinct from triplet superconductivity in ^{3}He and ferromagnetic superconductors.
Collapse
Affiliation(s)
- Yang-Zhi Chou
- Condensed Matter Theory Center and Joint Quantum Institute, Department of Physics, University of Maryland, College Park, Maryland 20742, USA
| | - Fengcheng Wu
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Jay D Sau
- Condensed Matter Theory Center and Joint Quantum Institute, Department of Physics, University of Maryland, College Park, Maryland 20742, USA
| | - Sankar Das Sarma
- Condensed Matter Theory Center and Joint Quantum Institute, Department of Physics, University of Maryland, College Park, Maryland 20742, USA
| |
Collapse
|
15
|
Ai L, Zhang E, Yang J, Xie X, Yang Y, Jia Z, Zhang Y, Liu S, Li Z, Leng P, Cao X, Sun X, Zhang T, Kou X, Han Z, Xiu F, Dong S. Van der Waals ferromagnetic Josephson junctions. Nat Commun 2021; 12:6580. [PMID: 34772912 PMCID: PMC8589954 DOI: 10.1038/s41467-021-26946-w] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/12/2021] [Accepted: 10/25/2021] [Indexed: 11/17/2022] Open
Abstract
Superconductor-ferromagnet interfaces in two-dimensional heterostructures present a unique opportunity to study the interplay between superconductivity and ferromagnetism. The realization of such nanoscale heterostructures in van der Waals (vdW) crystals remains largely unexplored due to the challenge of making atomically-sharp interfaces from their layered structures. Here, we build a vdW ferromagnetic Josephson junction (JJ) by inserting a few-layer ferromagnetic insulator Cr2Ge2Te6 into two layers of superconductor NbSe2. The critical current and corresponding junction resistance exhibit a hysteretic and oscillatory behavior against in-plane magnetic fields, manifesting itself as a strong Josephson coupling state. Also, we observe a central minimum of critical current in some JJ devices as well as a nontrivial phase shift in SQUID structures, evidencing the coexistence of 0 and π phase in the junction region. Our study paves the way to exploring sensitive probes of weak magnetism and multifunctional building-blocks for phase-related superconducting circuits using vdW heterostructures.
Collapse
Affiliation(s)
- Linfeng Ai
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
- Shanghai Qi Zhi Institute, 41th Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, 200232, Shanghai, China
| | - Enze Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
| | - Jinshan Yang
- State Key Laboratory of High Performance Ceramics & Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 200050, Shanghai, China
| | - Xiaoyi Xie
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
- Shanghai Qi Zhi Institute, 41th Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, 200232, Shanghai, China
| | - Yunkun Yang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
| | - Zehao Jia
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
- Shanghai Qi Zhi Institute, 41th Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, 200232, Shanghai, China
| | - Yuda Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
- Shanghai Qi Zhi Institute, 41th Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, 200232, Shanghai, China
| | - Shanshan Liu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
| | - Zihan Li
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
| | - Pengliang Leng
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
- Shanghai Qi Zhi Institute, 41th Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, 200232, Shanghai, China
| | - Xiangyu Cao
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
- Shanghai Qi Zhi Institute, 41th Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, 200232, Shanghai, China
| | - Xingdan Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang, China
| | - Tongyao Zhang
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, 030006, Taiyuan, China
| | - Xufeng Kou
- School of Information Science and Technology, ShanghaiTech University, 201210, Shanghai, China
| | - Zheng Han
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang, China
- State Key Laboratory of Quantum Optics and Quantum Optics Devices, Institute of Opto-Electronics, Shanxi University, 030006, Taiyuan, China
| | - Faxian Xiu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China.
- Shanghai Qi Zhi Institute, 41th Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, 200232, Shanghai, China.
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, 200433, Shanghai, China.
- Shanghai Research Center for Quantum Sciences, 201315, Shanghai, China.
| | - Shaoming Dong
- State Key Laboratory of High Performance Ceramics & Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 200050, Shanghai, China.
| |
Collapse
|
16
|
Putungan DB, Kuo JL. Lithium and sodium intercalation in a 2D NbSe 2 bilayer-stacked homostructure: comparative study of ionic adsorption and diffusion behavior. Phys Chem Chem Phys 2021; 23:19811-19818. [PMID: 34525136 DOI: 10.1039/d1cp02290c] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/28/2022]
Abstract
In this work, we probed the lithium and sodium intercalation properties in monolayer-stacked NbSe2 bilayer homostructure configurations for their potential application as anode materials in lithium and sodium ion batteries. Similar to known monolayer transition metal dichalcogenides, such as VS2, the structural phase transition barrier of NbSe2 from 1H to 1T is strengthened by lithium and sodium adsorption, implying that it is robust under multiple charging and discharging processes. As multi-layer, stacked 2D materials are more relevant to experiments and their intended applications, four bilayer homostructure stackings were constructed based on the alignment of Nb and Se. All four bilayer homostructure stackings were found to significantly enhance the binding of lithium and sodium at the van der Waals interface, and thus potentially increase the theoretical specific energy capacity of NbSe2via bilayer stacking. In terms of ionic diffusion, it is observed that for all of the bilayer homostructure configurations the diffusion energy barrier for lithium and sodium generally increased compared to the monolayer case. The nature of the stacking appears to affect the diffusion energy barrier with a value of as high as 1.94 eV in the case of sodium for the AB full stacking (compared to 0.08 eV for the monolayer). It is inferred that although the bilayer homostructure stacking of NbSe2 could significantly increase the theoretical specific energy capacity for both lithium and sodium, its drawback is the slowing down of the ion kinetics at the van der Waals interface, which are also important in the charging and discharging processes of a battery system.
Collapse
Affiliation(s)
- Darwin Barayang Putungan
- Physics Division, Institute of Mathematical Sciences and Physics, University of the Philippines Los Baños, College, Los Baños, Laguna, Philippines.
| | - Jer-Lai Kuo
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan
| |
Collapse
|
17
|
Idzuchi H, Pientka F, Huang KF, Harada K, Gül Ö, Shin YJ, Nguyen LT, Jo NH, Shindo D, Cava RJ, Canfield PC, Kim P. Unconventional supercurrent phase in Ising superconductor Josephson junction with atomically thin magnetic insulator. Nat Commun 2021; 12:5332. [PMID: 34504077 PMCID: PMC8429564 DOI: 10.1038/s41467-021-25608-1] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/24/2021] [Accepted: 08/22/2021] [Indexed: 11/23/2022] Open
Abstract
In two-dimensional (2D) NbSe2 crystal, which lacks inversion symmetry, strong spin-orbit coupling aligns the spins of Cooper pairs to the orbital valleys, forming Ising Cooper pairs (ICPs). The unusual spin texture of ICPs can be further modulated by introducing magnetic exchange. Here, we report unconventional supercurrent phase in van der Waals heterostructure Josephson junctions (JJs) that couples NbSe2 ICPs across an atomically thin magnetic insulator (MI) Cr2Ge2Te6. By constructing a superconducting quantum interference device (SQUID), we measure the phase of the transferred Cooper pairs in the MI JJ. We demonstrate a doubly degenerate nontrivial JJ phase (ϕ), formed by momentum-conserving tunneling of ICPs across magnetic domains in the barrier. The doubly degenerate ground states in MI JJs provide a two-level quantum system that can be utilized as a new dissipationless component for superconducting quantum devices. Our work boosts the study of various superconducting states with spin-orbit coupling, opening up an avenue to designing new superconducting phase-controlled quantum electronic devices. Van der Waals structures provide a new platform to explore novel physics of superconductor/ferromagnet interfaces. Here, NbSe2 Josephson junction with Cr2Ge2Te6 enables non-trivial Josephson phase by spin-dependent interaction, boosting the study of superconducting states with spin-orbit coupling and phase-controlled quantum electronic device.
Collapse
Affiliation(s)
- H Idzuchi
- Department of Physics, Harvard University, Cambridge, MA, USA.,WPI Advanced Institute for Materials Research and Center for Science and Innovation in Spintronics, Tohoku University, Sendai, Japan
| | - F Pientka
- Department of Physics, Harvard University, Cambridge, MA, USA.,Institut für Theoretische Physik, Goethe-Universität, Frankfurt am Main, Germany
| | - K-F Huang
- Department of Physics, Harvard University, Cambridge, MA, USA
| | - K Harada
- Center for Emergent Matter Science (CEMS), RIKEN, Hatoyama, Saitama, Japan
| | - Ö Gül
- Department of Physics, Harvard University, Cambridge, MA, USA
| | - Y J Shin
- Department of Physics, Harvard University, Cambridge, MA, USA.,Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY, USA
| | - L T Nguyen
- Department of Chemistry, Princeton University, Princeton, NJ, USA
| | - N H Jo
- Department of Physics and Astronomy, Iowa State University, Ames, IA, USA.,Ames Laboratory, Iowa State University, Ames, IA, USA
| | - D Shindo
- Center for Emergent Matter Science (CEMS), RIKEN, Hatoyama, Saitama, Japan
| | - R J Cava
- Department of Chemistry, Princeton University, Princeton, NJ, USA
| | - P C Canfield
- Department of Physics and Astronomy, Iowa State University, Ames, IA, USA.,Ames Laboratory, Iowa State University, Ames, IA, USA
| | - P Kim
- Department of Physics, Harvard University, Cambridge, MA, USA.
| |
Collapse
|
18
|
Murthy AA, Ribet SM, Stanev TK, Liu P, Watanabe K, Taniguchi T, Stern NP, Reis RD, Dravid VP. Spatial Mapping of Electrostatic Fields in 2D Heterostructures. NANO LETTERS 2021; 21:7131-7137. [PMID: 34448396 PMCID: PMC9416602 DOI: 10.1021/acs.nanolett.1c01636] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
In situ electron microscopy is an effective tool for understanding the mechanisms driving novel phenomena in 2D structures. However, due to practical challenges, it is difficult to address these technologically relevant 2D heterostructures with electron microscopy. Here, we use the differential phase contrast (DPC) imaging technique to build a methodology for probing local electrostatic fields during electrical operation with nanoscale spatial resolution in such materials. We find that, by combining a traditional DPC setup with a high-pass filter, we can largely eliminate electric fluctuations emanating from short-range atomic potentials. Using a method based on this filtering algorithm, a priori electric field expectations can be directly compared with experimentally derived values to readily identify inhomogeneities and potentially problematic regions. We use this platform to analyze the electric field and charge density distribution across layers of hBN and MoS2.
Collapse
Affiliation(s)
- Akshay A Murthy
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- International Institute of Nanotechnology, Northwestern University, Evanston, Illinois 60208, United States
| | - Stephanie M Ribet
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- International Institute of Nanotechnology, Northwestern University, Evanston, Illinois 60208, United States
| | - Teodor K Stanev
- Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208, United States
| | - Pufan Liu
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Nathaniel P Stern
- Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208, United States
| | - Roberto Dos Reis
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- The NUANCE Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Vinayak P Dravid
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- International Institute of Nanotechnology, Northwestern University, Evanston, Illinois 60208, United States
- The NUANCE Center, Northwestern University, Evanston, Illinois 60208, United States
| |
Collapse
|
19
|
Joseph NB, Narayan A. Topological properties of bulk and bilayer 2M WS 2: a first-principles study. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:465001. [PMID: 34399421 DOI: 10.1088/1361-648x/ac1de1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/24/2021] [Accepted: 08/16/2021] [Indexed: 06/13/2023]
Abstract
Recently discovered 2M phase of bulk WS2was observed to exhibit superconductivity with a critical temperature of 8.8 K, the highest reported among superconducting transition metal dichalcogenides. Also predicted to support protected surface states, it could be a potential topological superconductor. In the present study, we perform a detailed first-principles analysis of bulk and bilayer 2M WS2. We report a comprehensive investigation of the bulk phase, comparing structural and electronic properties obtained from different exchange correlation functionals to the experimentally reported values. By calculation of theZ2invariant and surface states, we give support for its non-trivial band nature. Based on the insights gained from the analysis of the bulk phase, we predict bilayer 2M WS2as a new two-dimensional topological material. We demonstrate its dynamical stability from first-principles phonon computations and present its electronic properties, highlighting the band inversions between the Wdand Spstates. By means ofZ2invariant computations and a calculation of the edge states, we show that bilayer 2M WS2exhibits protected, robust edge states. The broken inversion symmetry in this newly proposed bilayer also leads to the presence of Berry curvature dipole and resulting non-linear responses. We compute the Berry curvature distribution and the dipole as a function of Fermi energy. We propose that Berry curvature dipole signals, which are absent in the centrosymmetric bulk 2M WS2, can be signatures of the bilayer. We hope our predictions lead to the experimental realization of this as-yet-undiscovered two-dimensional topological material.
Collapse
Affiliation(s)
- Nesta Benno Joseph
- Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore 560012, India
| | - Awadhesh Narayan
- Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore 560012, India
| |
Collapse
|
20
|
Farrar LS, Nevill A, Lim ZJ, Balakrishnan G, Dale S, Bending SJ. Superconducting Quantum Interference in Twisted van der Waals Heterostructures. NANO LETTERS 2021; 21:6725-6731. [PMID: 34428907 PMCID: PMC8397396 DOI: 10.1021/acs.nanolett.1c00152] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/13/2021] [Revised: 07/21/2021] [Indexed: 06/13/2023]
Abstract
We demonstrate the formation of both Josephson junctions and superconducting quantum interference devices (SQUIDs) using a dry transfer technique to stack and deterministically misalign mechanically exfoliated flakes of NbSe2. The current-voltage characteristics of the resulting twisted NbSe2-NbSe2 junctions are found to be sensitive to the misalignment angle of the crystallographic axes, opening up a new control parameter for optimization of the device performance, which is not available in thin-film-deposited junctions. A single lithographic process has then been implemented to shape Josephson junctions into SQUID geometries with typical loop areas of ∼25 μm2 and weak links ∼600 nm wide. At T = 3.75 K in an applied magnetic field, these devices display large stable current and voltage modulation depths of up to ΔIc ∼ 75% and ΔV ∼ 1.4 mV, respectively.
Collapse
Affiliation(s)
- Liam S. Farrar
- Department
of Physics, University of Bath, Bath BA2 7AY, United Kingdom
| | - Aimee Nevill
- Department
of Physics, University of Bath, Bath BA2 7AY, United Kingdom
| | - Zhen Jieh Lim
- Department
of Physics, University of Bath, Bath BA2 7AY, United Kingdom
| | - Geetha Balakrishnan
- Department
of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
| | - Sara Dale
- Department
of Physics, University of Bath, Bath BA2 7AY, United Kingdom
| | - Simon J. Bending
- Department
of Physics, University of Bath, Bath BA2 7AY, United Kingdom
| |
Collapse
|
21
|
Shrivastava M, Ramgopal Rao V. A Roadmap for Disruptive Applications and Heterogeneous Integration Using Two-Dimensional Materials: State-of-the-Art and Technological Challenges. NANO LETTERS 2021; 21:6359-6381. [PMID: 34342450 DOI: 10.1021/acs.nanolett.1c00729] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
This Mini Review attempts to establish a roadmap for two-dimensional (2D) material-based microelectronic technologies for future/disruptive applications with a vision for the semiconductor industry to enable a universal technology platform for heterogeneous integration. The heterogeneous integration would involve integrating orthogonal capabilities, such as different forms of computing (classical, neuromorphic, and quantum), all forms of sensing, digital and analog memories, energy harvesting, and so forth, all in a single chip using a universal technology platform. We have reviewed the state-of-the-art 2D materials such as graphene, transition metal dichalcogenides, phosphorene and hexagonal boron nitride, and so forth, and how they offer unique possibilities for a range of futuristic/disruptive applications. Besides, we have discussed the technological and fundamental challenges in enabling such a universal technology platform, where the world stands today, and what gaps are required to be filled.
Collapse
Affiliation(s)
- Mayank Shrivastava
- Department of Electronic Systems Engineering, Indian Institute of Science, Bangalore 560012, India
| | - V Ramgopal Rao
- Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 40076, India
| |
Collapse
|
22
|
Joshi J, Zhou T, Krylyuk S, Davydov AV, Zutic I, Vora PM. Localized Excitons in NbSe 2-MoSe 2 Heterostructures. ACS NANO 2020; 14:8528-8538. [PMID: 32639717 PMCID: PMC8171581 DOI: 10.1021/acsnano.0c02803] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/29/2023]
Abstract
Neutral and charged excitons (trions) in atomically thin materials offer important capabilities for photonics, from ultrafast photodetectors to highly efficient light-emitting diodes and lasers. Recent studies of van der Waals (vdW) heterostructures comprised of dissimilar monolayer materials have uncovered a wealth of optical phenomena that are predominantly governed by interlayer interactions. Here, we examine the optical properties in NbSe2-MoSe2 vdW heterostructures, which provide an important model system to study metal-semiconductor interfaces, a common element in optoelectronics. Through low-temperature photoluminescence (PL) microscopy, we discover a sharp emission feature, L1, that is localized at the NbSe2-capped regions of MoSe2. L1 is observed at energies below the commonly studied MoSe2 excitons and trions and exhibits temperature- and power-dependent PL consistent with exciton localization in a confining potential. This PL feature is robust, observed in a variety of samples fabricated with different stacking geometries and cleaning procedures. Using first-principles calculations, we reveal that the confinement potential required for exciton localization naturally arises from the in-plane band bending due to the changes in the electron affinity between pristine MoSe2 and NbSe2-MoSe2 heterostructure. We discuss the implications of our studies for atomically thin optoelectronics devices with atomically sharp interfaces and tunable electronic structures.
Collapse
Affiliation(s)
- Jaydeep Joshi
- Department of Physics and Astronomy, George Mason University, Fairfax, Virginia 22030, United States
- Quantum Science and Engineering Center, George Mason University, Fairfax, Virginia 22030, United States
| | - Tong Zhou
- Department of Physics, University at Buffalo, Buffalo, New York 14260, United States
| | - Sergiy Krylyuk
- Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Albert V. Davydov
- Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Igor Zutic
- Department of Physics, University at Buffalo, Buffalo, New York 14260, United States
| | - Patrick M. Vora
- Department of Physics and Astronomy, George Mason University, Fairfax, Virginia 22030, United States
- Quantum Science and Engineering Center, George Mason University, Fairfax, Virginia 22030, United States
| |
Collapse
|
23
|
Wakafuji Y, Moriya R, Masubuchi S, Watanabe K, Taniguchi T, Machida T. 3D Manipulation of 2D Materials Using Microdome Polymer. NANO LETTERS 2020; 20:2486-2492. [PMID: 32155082 DOI: 10.1021/acs.nanolett.9b05228] [Citation(s) in RCA: 18] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
We demonstrate 3D mechanical manipulations, such as sliding, rotating, folding, flipping, and exfoliating, of 2D materials using a microdome polymer (MDP) via in situ real-time observation with an optical microscope. A dimethylpolysiloxane (PDMS)-based MDP is covered with a poly(vinyl chloride) (PVC) adhesion layer. This PVC-MDP structure enables us to achieve small and adjustable contact areas between the PVC-MDP and a 2D-material flake, which is typically between ∼10 and ∼100 μm in diameter. The adhesion between the PVC polymer and 2D materials is fully tunable with temperature: Strong adhesion at ∼70 °C allows pick-up of the 2D material, and release occurs at ∼130 °C when the adhesion is weak. Thus the PVC-MDP functions as a point-of-contact manipulator for 2D materials, permitting the 3D manipulation of 2D-material flakes. Our method could facilitate the expansion of van der Waals heterostructure fabrication technology and the development of preparation techniques for more complex 3D structures.
Collapse
Affiliation(s)
- Yusai Wakafuji
- Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
| | - Rai Moriya
- Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
| | - Satoru Masubuchi
- Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
| | - Kenji Watanabe
- National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
- National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Tomoki Machida
- Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan
| |
Collapse
|
24
|
Hou XY, Zhang F, Tu XH, Gu YD, Zhang MD, Gong J, Tu YB, Wang BT, Lv WG, Weng HM, Ren ZA, Chen GF, Zhu XD, Hao N, Shan L. Inelastic Electron Tunneling in 2H-Ta_{x}Nb_{1-x}Se_{2} Evidenced by Scanning Tunneling Spectroscopy. PHYSICAL REVIEW LETTERS 2020; 124:106403. [PMID: 32216384 DOI: 10.1103/physrevlett.124.106403] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/30/2019] [Revised: 01/29/2020] [Accepted: 02/11/2020] [Indexed: 06/10/2023]
Abstract
We report a detailed study of tunneling spectra measured on 2H-Ta_{x}Nb_{1-x}Se_{2} (x=0∼0.1) single crystals using a low-temperature scanning tunneling microscope. The prominent gaplike feature, which has not been understood for a long time, was found to be accompanied by some "in-gap" fine structures. By investigating the second-derivative spectra and their temperature and magnetic field dependencies, we were able to prove that inelastic electron tunneling is the origin of these features and obtain the Eliashberg function of 2H-Ta_{x}Nb_{1-x}Se_{2} at an atomic scale, providing a potential way to study the local Eliashberg function and the phonon spectra of the related transition-metal dichalcogenides.
Collapse
Affiliation(s)
- Xing-Yuan Hou
- Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Fan Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Xin-Hai Tu
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, China
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
| | - Ya-Dong Gu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Meng-Di Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Jing Gong
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Yu-Bing Tu
- Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
| | - Bao-Tian Wang
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
| | - Wen-Gang Lv
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Hong-Ming Weng
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Zhi-An Ren
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Gen-Fu Chen
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Xiang-De Zhu
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, China
| | - Ning Hao
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, China
| | - Lei Shan
- Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| |
Collapse
|
25
|
Yang SJ, Choi S, Odongo Ngome FO, Kim KJ, Choi SY, Kim CJ. All-Dry Transfer of Graphene Film by van der Waals Interactions. NANO LETTERS 2019; 19:3590-3596. [PMID: 31082260 DOI: 10.1021/acs.nanolett.9b00555] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
We report a method that uses van der Waals interactions to transfer continuous, high-quality graphene films from Ge(110) to a different substrate held by hexagonal boron nitride carriers in a clean, dry environment. The transferred films are uniform and continuous with low defect density and few charge puddles. The transfer is effective because of the weak interfacial adhesion energy between graphene and Ge. Based on the minimum strain energy required for the isolation of film, the upper limit of the interfacial adhesion energy is estimated to be 23 meV per carbon atom, which makes graphene/Ge(110) the first as-grown graphene film that has a substrate adhesion energy lower than that of typical van der Waals interactions between layered materials. Our results suggest that graphene on Ge can serve as an ideal material platform to be integrated with other material systems by a clean assembly process.
Collapse
|
26
|
Lin H, Zhu Q, Shu D, Lin D, Xu J, Huang X, Shi W, Xi X, Wang J, Gao L. Growth of environmentally stable transition metal selenide films. NATURE MATERIALS 2019; 18:602-607. [PMID: 30858568 DOI: 10.1038/s41563-019-0321-8] [Citation(s) in RCA: 51] [Impact Index Per Article: 10.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/29/2018] [Accepted: 02/11/2019] [Indexed: 06/09/2023]
Abstract
Two-dimensional transition metal selenides (TMSs) possess fascinating physical properties. However, many as-prepared TMSs are environmentally unstable and limited in sample size, which greatly hinder their wide applications in high-performance electrical devices. Here we develop a general two-step vapour deposition method and successfully grow different TMS films with controllable thickness, wafer size and high quality. The superconductivity of the grown NbSe2 film is comparable with sheets exfoliated from bulk materials, and can maintain stability after a variety of harsh treatments, which are ascribed to the absence of oxygen during the whole growth process. Such environmental stability can greatly simplify the fabrication procedure for device applications, and should be of both fundamental and technological significance in developing TMS-based devices.
Collapse
Affiliation(s)
- Huihui Lin
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Qi Zhu
- Center of Electron Microscopy and State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China
| | - Dajun Shu
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Dongjing Lin
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Jie Xu
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Xianlei Huang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Wei Shi
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Xiaoxiang Xi
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Jiangwei Wang
- Center of Electron Microscopy and State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China.
| | - Libo Gao
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
| |
Collapse
|
27
|
Lee GH, Lee HJ. Proximity coupling in superconductor-graphene heterostructures. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2018; 81:056502. [PMID: 29451135 DOI: 10.1088/1361-6633/aaafe1] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
This review discusses the electronic properties and the prospective research directions of superconductor-graphene heterostructures. The basic electronic properties of graphene are introduced to highlight the unique possibility of combining two seemingly unrelated physics, superconductivity and relativity. We then focus on graphene-based Josephson junctions, one of the most versatile superconducting quantum devices. The various theoretical methods that have been developed to describe graphene Josephson junctions are examined, together with their advantages and limitations, followed by a discussion on the advances in device fabrication and the relevant length scales. The phase-sensitive properties and phase-particle dynamics of graphene Josephson junctions are examined to provide an understanding of the underlying mechanisms of Josephson coupling via graphene. Thereafter, microscopic transport of correlated quasiparticles produced by Andreev reflections at superconducting interfaces and their phase-coherent behaviors are discussed. Quantum phase transitions studied with graphene as an electrostatically tunable 2D platform are reviewed. The interplay between proximity-induced superconductivity and the quantum-Hall phase is discussed as a possible route to study topological superconductivity and non-Abelian physics. Finally, a brief summary on the prospective future research directions is given.
Collapse
Affiliation(s)
- Gil-Ho Lee
- Department of Physics, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea. Department of Physics, Harvard University, Cambridge, MA 02138, United States of America
| | | |
Collapse
|