1
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Wu C, Yan X, Li Y, Li Y, Zhang J, Yuan X, Zhang Y, Zhang X. Low-threshold single-mode nanowire array flat-band photonic-crystal surface-emitting lasers with high-reflectivity bottom mirrors. OPTICS EXPRESS 2024; 32:652-661. [PMID: 38175089 DOI: 10.1364/oe.511175] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/08/2023] [Accepted: 12/10/2023] [Indexed: 01/05/2024]
Abstract
A Si-based nanowire array photonic-crystal surface-emitting laser based on a flat band is designed and simulated. By introducing an air gap between the nanowire and substrate, the bottom reflectivity is significantly enhanced, resulting in much lower threshold and smaller cutoff diameter. Through adjusting the lattice constant (the distance between neighboring nanowires) and nanowire diameter, a photonic crystal structure with a flat band is achieved, in which strong interaction between light and matter occurs in the flat band mode. For the device with a small size, single-mode lasing is obtained with a side-mode suppression ratio of 21 dB, high quality factor of 3940, low threshold gain of 624 cm-1, and small beam divergency angle of ∼7.5°. This work may pave the way for the development of high-performance Si-based surface-emitting nanolasers and high-density photonic integrated circuits.
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2
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Patel N, Fonseka HA, Zhang Y, Church S, Al-Abri R, Sanchez A, Liu H, Parkinson P. Improving Quantum Well Tube Homogeneity Using Strained Nanowire Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2023; 15:10958-10964. [PMID: 36779871 PMCID: PMC9982810 DOI: 10.1021/acsami.2c22591] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/15/2022] [Accepted: 01/28/2023] [Indexed: 06/18/2023]
Abstract
Bottom-up grown nanostructures often suffer from significant dimensional inhomogeneity, and for quantum confined heterostructures, this can lead to a corresponding large variation in electronic properties. A high-throughput characterization methodology is applied to >15,000 nanoskived sections of highly strained GaAsP/GaAs radial core/shell quantum well heterostructures revealing high emission uniformity. While scanning electron microscopy shows a wide nanowire diameter spread of 540-60+60 nm, photoluminescence reveals a tightly bounded band-to-band transition energy of 1546-3+4 meV. A highly strained core/shell nanowire design is shown to reduce the dependence of emission on the quantum well width variation significantly more than in the unstrained case.
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Affiliation(s)
- Nikesh Patel
- Department
of Physics & Astronomy, Photon Science Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, United Kingdom
| | - H. Aruni Fonseka
- Department
of Physics, University of Warwick, Coventry, CV4 7AL, United Kingdom
| | - Yunyan Zhang
- Department
of Electronic and Electrical Engineering, University College London, London, WC1E 6BT, United Kingdom
- School
of Micro-Nano Electronics, Zhejiang University, Hangzhou, Zhejiang 311200, China
| | - Stephen Church
- Department
of Physics & Astronomy, Photon Science Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, United Kingdom
| | - Ruqaiya Al-Abri
- Department
of Physics & Astronomy, Photon Science Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, United Kingdom
| | - Ana Sanchez
- Department
of Physics, University of Warwick, Coventry, CV4 7AL, United Kingdom
| | - Huiyun Liu
- Department
of Electronic and Electrical Engineering, University College London, London, WC1E 6BT, United Kingdom
| | - Patrick Parkinson
- Department
of Physics & Astronomy, Photon Science Institute, The University of Manchester, Oxford Road, Manchester, M13 9PL, United Kingdom
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3
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Hill MO, Schmiedeke P, Huang C, Maddali S, Hu X, Hruszkewycz SO, Finley JJ, Koblmüller G, Lauhon LJ. 3D Bragg Coherent Diffraction Imaging of Extended Nanowires: Defect Formation in Highly Strained InGaAs Quantum Wells. ACS NANO 2022; 16:20281-20293. [PMID: 36378999 DOI: 10.1021/acsnano.2c06071] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
InGaAs quantum wells embedded in GaAs nanowires can serve as compact near-infrared emitters for direct integration onto Si complementary metal oxide semiconductor technology. While the core-shell geometry in principle allows for a greater tuning of composition and emission, especially farther into the infrared, the practical limits of elastic strain accommodation in quantum wells on multifaceted nanowires have not been established. One barrier to progress is the difficulty of directly comparing the emission characteristics and the precise microstructure of a single nanowire. Here we report an approach to correlating quantum well morphology, strain, defects, and emission to understand the limits of elastic strain accommodation in nanowire quantum wells specific to their geometry. We realize full 3D Bragg coherent diffraction imaging (BCDI) of intact quantum wells on vertically oriented epitaxial nanowires, which enables direct correlation with single-nanowire photoluminescence. By growing In0.2Ga0.8As quantum wells of distinct thicknesses on different facets of the same nanowire, we identified the critical thickness at which defects are nucleated. A correlation with a traditional transmission electron microscopy analysis confirms that BCDI can image the extended structure of defects. Finite element simulations of electron and hole states explain the emission characteristics arising from strained and partially relaxed regions. This approach, imaging the 3D strain and microstructure of intact nanowire core-shell structures with application-relevant dimensions, can aid the development of predictive models that enable the design of new compact infrared emitters.
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Affiliation(s)
- Megan O Hill
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois60208, United States
| | - Paul Schmiedeke
- Walter Schottky Institute and Physics Department, Technical University of Munich, Garching85748, Germany
| | - Chunyi Huang
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois60208, United States
| | - Siddharth Maddali
- Materials Science Division, Argonne National Laboratory, Argonne, Illinois60439, United States
| | - Xiaobing Hu
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois60208, United States
- The NUANCE Center, Northwestern University, Evanston, Illinois60208, United States
| | - Stephan O Hruszkewycz
- Materials Science Division, Argonne National Laboratory, Argonne, Illinois60439, United States
| | - Jonathan J Finley
- Walter Schottky Institute and Physics Department, Technical University of Munich, Garching85748, Germany
| | - Gregor Koblmüller
- Walter Schottky Institute and Physics Department, Technical University of Munich, Garching85748, Germany
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois60208, United States
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4
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Güniat L, Tappy N, Balgarkashi A, Charvin T, Lemerle R, Morgan N, Dede D, Kim W, Piazza V, Leran JB, Tizei LHG, Kociak M, Fontcuberta i Morral A. Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for Dual Light-Emitting Devices. ACS APPLIED NANO MATERIALS 2022; 5:5508-5515. [PMID: 35492438 PMCID: PMC9039963 DOI: 10.1021/acsanm.2c00507] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/02/2022] [Accepted: 04/04/2022] [Indexed: 06/14/2023]
Abstract
III-V semiconductors outperform Si in many optoelectronics applications due to their high carrier mobility, efficient light emission and absorption processes, and the possibility to engineer their band gap through alloying. However, complementing Si technology with III-V semiconductors by integration on Si(100) remains a challenge still today. Vertical nanospades (NSPDs) are quasi-bi-crystal III-V nanostructures that grow on Si(100). Here, we showcase the potential of these structures in optoelectronics application by demonstrating InGaAs heterostructures on GaAs NSPDs that exhibit bright emission in the near-infrared region. Using cathodoluminescence hyperspectral imaging, we are able to study light emission properties at a few nanometers of spatial resolution, well below the optical diffraction limit. We observe a symmetric spatial luminescence splitting throughout the NSPD. We correlate this characteristic to the structure's crystal nature, thus opening new perspectives for dual wavelength light-emitting diode structures. This work paves the path for integrating optically active III-V structures on the Si(100) platform.
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Affiliation(s)
- Lucas Güniat
- Laboratory
of Semiconductor Materials, Institute of Materials, School of Engineering, École Polytechnique Fédérale
de Lausanne, Route Cantonale, 1015 Lausanne, Switzerland
| | - Nicolas Tappy
- Laboratory
of Semiconductor Materials, Institute of Materials, School of Engineering, École Polytechnique Fédérale
de Lausanne, Route Cantonale, 1015 Lausanne, Switzerland
| | - Akshay Balgarkashi
- Laboratory
of Semiconductor Materials, Institute of Materials, School of Engineering, École Polytechnique Fédérale
de Lausanne, Route Cantonale, 1015 Lausanne, Switzerland
| | - Titouan Charvin
- Laboratory
of Semiconductor Materials, Institute of Materials, School of Engineering, École Polytechnique Fédérale
de Lausanne, Route Cantonale, 1015 Lausanne, Switzerland
| | - Raphaël Lemerle
- Laboratory
of Semiconductor Materials, Institute of Materials, School of Engineering, École Polytechnique Fédérale
de Lausanne, Route Cantonale, 1015 Lausanne, Switzerland
| | - Nicholas Morgan
- Laboratory
of Semiconductor Materials, Institute of Materials, School of Engineering, École Polytechnique Fédérale
de Lausanne, Route Cantonale, 1015 Lausanne, Switzerland
| | - Didem Dede
- Laboratory
of Semiconductor Materials, Institute of Materials, School of Engineering, École Polytechnique Fédérale
de Lausanne, Route Cantonale, 1015 Lausanne, Switzerland
| | - Wonjong Kim
- Laboratory
of Semiconductor Materials, Institute of Materials, School of Engineering, École Polytechnique Fédérale
de Lausanne, Route Cantonale, 1015 Lausanne, Switzerland
| | - Valerio Piazza
- Laboratory
of Semiconductor Materials, Institute of Materials, School of Engineering, École Polytechnique Fédérale
de Lausanne, Route Cantonale, 1015 Lausanne, Switzerland
| | - Jean-Baptiste Leran
- Laboratory
of Semiconductor Materials, Institute of Materials, School of Engineering, École Polytechnique Fédérale
de Lausanne, Route Cantonale, 1015 Lausanne, Switzerland
| | - Luiz H. G. Tizei
- Université
Paris-Saclay, CNRS, Laboratoire de Physique
des Solides, 91405 Orsay, France
| | - Mathieu Kociak
- Université
Paris-Saclay, CNRS, Laboratoire de Physique
des Solides, 91405 Orsay, France
| | - Anna Fontcuberta i Morral
- Laboratory
of Semiconductor Materials, Institute of Materials, School of Engineering, École Polytechnique Fédérale
de Lausanne, Route Cantonale, 1015 Lausanne, Switzerland
- Institute
of Physics, School of Basic Sciences, École
Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
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5
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Tiwari P, Fischer A, Scherrer M, Caimi D, Schmid H, Moselund KE. Single-Mode Emission in InP Microdisks on Si Using Au Antenna. ACS PHOTONICS 2022; 9:1218-1225. [PMID: 35480488 PMCID: PMC9026291 DOI: 10.1021/acsphotonics.1c01677] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/31/2021] [Indexed: 06/14/2023]
Abstract
An important building block for on-chip photonic applications is a scaled emitter. Whispering gallery mode cavities based on III-Vs on Si allow for small device footprints and lasing with low thresholds. However, multimodal emission and wavelength stability over a wider range of temperature can be challenging. Here, we explore the use of Au nanorod antennae on InP whispering gallery mode lasers on Si for single-mode emission. We show that by proper choice of the antenna size and positioning, we can suppress the side modes of a cavity and achieve single-mode emission over a wide excitation range. We establish emission trends by varying the size of the antenna and show that the far-field radiation pattern differs significantly for devices with and without antenna. Furthermore, the antenna-induced single-mode emission is dominant from room temperature (300 K) down to 200 K, whereas the cavity without an antenna is multimodal and its dominant emission wavelength is highly temperature-dependent.
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6
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Küpers H, Lewis RB, Corfdir P, Niehle M, Flissikowski T, Grahn HT, Trampert A, Brandt O, Geelhaar L. Drastic Effect of Sequential Deposition Resulting from Flux Directionality on the Luminescence Efficiency of Nanowire Shells. ACS APPLIED MATERIALS & INTERFACES 2021; 13:50220-50227. [PMID: 34643384 DOI: 10.1021/acsami.1c12371] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Core-shell nanowire heterostructures form the basis for many innovative devices. When compound nanowire shells are grown by directional deposition techniques, the azimuthal position of the sources for the different constituents in the growth reactor, substrate rotation, and nanowire self-shadowing inevitably lead to sequential deposition. Here, we uncover for In0.15Ga0.85As/GaAs shell quantum wells grown by molecular beam epitaxy a drastic impact of this sequentiality on the luminescence efficiency. The photoluminescence intensity of shell quantum wells grown with a flux sequence corresponding to migration enhanced epitaxy, that is, when As and the group-III metals essentially do not impinge at the same time, is more than 2 orders of magnitude higher than for shell quantum wells prepared with substantially overlapping fluxes. Transmission electron microscopy does not reveal any extended defects explaining this difference. Our analysis of photoluminescence transients shows that co-deposition has two detrimental microscopic effects. First, a higher density of electrically active point defects leads to internal electric fields reducing the electron-hole wave function overlap. Second, more point defects form that act as nonradiative recombination centers. Our study demonstrates that the source arrangement of the growth reactor, which is of mere technical relevance for planar structures, can have drastic consequences for the material properties of nanowire shells. We expect that this finding holds good also for other alloy nanowire shells.
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Affiliation(s)
- Hanno Küpers
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Ryan B Lewis
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Pierre Corfdir
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Michael Niehle
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Timur Flissikowski
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Holger T Grahn
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Achim Trampert
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Oliver Brandt
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Lutz Geelhaar
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany
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7
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Zeng L, Holmér J, Dhall R, Gammer C, Minor AM, Olsson E. Tuning Hole Mobility of Individual p-Doped GaAs Nanowires by Uniaxial Tensile Stress. NANO LETTERS 2021; 21:3894-3900. [PMID: 33914543 PMCID: PMC8289290 DOI: 10.1021/acs.nanolett.1c00353] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/30/2021] [Revised: 04/21/2021] [Indexed: 06/12/2023]
Abstract
Strain engineering provides an effective way of tailoring the electronic and optoelectronic properties of semiconductor nanomaterials and nanodevices, giving rise to novel functionalities. Here, we present direct experimental evidence of strain-induced modifications of hole mobility in individual gallium arsenide (GaAs) nanowires, using in situ transmission electron microscopy (TEM). The conductivity of the nanowires varied with applied uniaxial tensile stress, showing an initial decrease of ∼5-20% up to a stress of 1-2 GPa, subsequently increasing up to the elastic limit of the nanowires. This is attributed to a hole mobility variation due to changes in the valence band structure caused by stress and strain. The corresponding lattice strain in the nanowires was quantified by in situ four dimensional scanning TEM and showed a complex spatial distribution at all stress levels. Meanwhile, a significant red shift of the band gap induced by the stress and strain was unveiled by monochromated electron energy loss spectroscopy.
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Affiliation(s)
- Lunjie Zeng
- Department
of Physics, Chalmers University of Technology, 412 96 Gothenburg, Sweden
| | - Jonatan Holmér
- Department
of Physics, Chalmers University of Technology, 412 96 Gothenburg, Sweden
| | - Rohan Dhall
- National
Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Christoph Gammer
- Erich
Schmid Institute of Materials Science, Austrian Academy of Sciences, 8700 Leoben, Austria
| | - Andrew M. Minor
- National
Center for Electron Microscopy, Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Department
of Materials Science and Engineering, University
of California, Berkeley, California 94720, United States
| | - Eva Olsson
- Department
of Physics, Chalmers University of Technology, 412 96 Gothenburg, Sweden
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8
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Ruhstorfer D, Lang A, Matich S, Döblinger M, Riedl H, Finley JJ, Koblmüller G. Growth dynamics and compositional structure in periodic InAsSb nanowire arrays on Si (111) grown by selective area molecular beam epitaxy. NANOTECHNOLOGY 2021; 32:135604. [PMID: 33238260 DOI: 10.1088/1361-6528/abcdca] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We report a comprehensive study of the growth dynamics in highly periodic, composition tunable InAsSb nanowire (NW) arrays using catalyst-free selective area molecular beam epitaxy. Employing periodically patterned SiO2-masks on Si (111) with various mask opening sizes (20-150 nm) and pitches (0.25-2 μm), high NW yield of >90% (irrespective of the InAsSb alloy composition) is realized by the creation of an As-terminated 1 × 1-Si(111) surface prior to NW nucleation. While the NW aspect ratio decreases continually with increasing Sb content (x Sb from 0% to 30%), we find a remarkable dependence of the aspect ratio on the mask opening size yielding up to ∼8-fold increase for openings decreasing from 150 to 20 nm. The effects of the interwire separation (pitch) on the NW aspect ratio are strongest for pure InAs NWs and gradually vanish for increasing Sb content, suggesting that growth of InAsSb NW arrays is governed by an In surface diffusion limited regime even for the smallest investigated pitches. Compositional analysis using high-resolution x-ray diffraction reveals a substantial impact of the pitch on the alloy composition in homogeneous InAsSb NW arrays, leading to much larger x Sb as the pitch increases due to decreasing competition for Sb adatoms. Scanning transmission electron microscopy and associated energy-dispersive x-ray spectroscopy performed on the cross-sections of individual NWs reveal an interesting growth-axis dependent core-shell like structure with a discontinuous few-nm thick Sb-deficient coaxial boundary layer and six Sb-deficient corner bands. Further analysis evidences the presence of a nanoscale facet at the truncation of the (111)B growth front and {1-10} sidewall surfaces that is found responsible for the formation of the characteristic core-shell structure.
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Affiliation(s)
- Daniel Ruhstorfer
- Walter Schottky Institute and Physics Department, Technical University of Munich, Garching, Germany
| | - Armin Lang
- Walter Schottky Institute and Physics Department, Technical University of Munich, Garching, Germany
| | - Sonja Matich
- Walter Schottky Institute and Physics Department, Technical University of Munich, Garching, Germany
| | - Markus Döblinger
- Department of Chemistry, Ludwig-Maximilians-University Munich, Munich, Germany
| | - Hubert Riedl
- Walter Schottky Institute and Physics Department, Technical University of Munich, Garching, Germany
| | - Jonathan J Finley
- Walter Schottky Institute and Physics Department, Technical University of Munich, Garching, Germany
| | - Gregor Koblmüller
- Walter Schottky Institute and Physics Department, Technical University of Munich, Garching, Germany
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9
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Goktas NI, Dubrovskii VG, LaPierre RR. Conformal Growth of Radial InGaAs Quantum Wells in GaAs Nanowires. J Phys Chem Lett 2021; 12:1275-1283. [PMID: 33497239 DOI: 10.1021/acs.jpclett.0c03712] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
GaAs-InGaAs-GaAs core-shell-shell nanowire (NW) structures were grown by gas source molecular beam epitaxy using the selective-area, self-assisted, vapor-liquid-solid method. The structural, morphological, and optical properties of the NWs were examined for different growth conditions of the InGaAs shell. With increasing In concentration of the InGaAs shell, the growth transitioned from preferential deposition at the NW base to the Stranski-Krastanov growth mode where InGaAs islands formed along the NW length. This trend is explained within a nucleation model where there is a critical In flux below which the conformal growth is suppressed and the shell forms only at the NW base. Low growth temperature produced a more uniform In distribution along the NW length but resulted in quenching of the photoluminescence (PL) emission. Alternatively, reducing the shell thickness and increasing the V/III flux ratio resulted in conformal InGaAs shell growth and quantum dot-like PL emission. Our results indicate a pathway toward the conditions for conformal InGaAs shell growth required for satisfactory optoelectronic performance.
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Affiliation(s)
- Nebile Isik Goktas
- Department of Engineering Physics, McMaster University, Hamilton, ON L8S 4L7, Canada
| | - Vladimir G Dubrovskii
- Department of Physics, St. Petersburg State University, Universitetskaya Emb. 13B, 199034 St. Petersburg, Russia
| | - Ray R LaPierre
- Department of Engineering Physics, McMaster University, Hamilton, ON L8S 4L7, Canada
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10
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Boras G, Yu X, Fonseka HA, Zhang D, Zeng H, Sanchez AM, Liu H. Checked patterned elemental distribution in AlGaAs nanowire branches via vapor-liquid-solid growth. NANOSCALE 2020; 12:15711-15720. [PMID: 32672269 DOI: 10.1039/d0nr02577a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Morphology, crystal defects and crystal phase can significantly affect the elemental distribution of ternary nanowires (NWs). Here, we report the synergic impact of the structure and crystal phase on the composition of branched self-catalyzed AlxGa1-xAs NWs. Branching events were confirmed to increase with Al incorporation rising, while twinning and polytypism were observed to extend from the trunk to the branches, confirming the epitaxial nature of the latter. The growth mechanism of these structures has been ascribed to Ga accumulation at the concave sites on the rough shell. This is in agreement with the ab initio calculations which reveal Ga atoms tend to segregate at the trunk/branch interface. Notably, uncommon, intricate compositional variations are exposed in these branched NWs, where Ga-rich stripes parallel to the growth direction of the branches intersect with another set of periodic arrangements of Ga-rich stripes which are perpendicular to them, leading to the realization of an elemental checked pattern. The periodic variations perpendicular to the growth direction of the branches are caused by the constant rotation of the sample during growth whilst Ga-rich stripes along the growth direction of the branches are understood to be driven by the different nucleation energies and polarities on facets of different crystal phase at the interface between the catalyst droplets and the branched NW tip. These results lead to further comprehension of phase segregation and could assist in the compositional engineering in ternary NWs via harnessing this interesting phenomenon.
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Affiliation(s)
- Giorgos Boras
- Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK.
| | - Xuezhe Yu
- Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK.
| | - H Aruni Fonseka
- Department of Physics, University of Warwick, Coventry CV4 7AL, UK
| | - Dong Zhang
- SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
| | - Haotian Zeng
- Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK.
| | - Ana M Sanchez
- Department of Physics, University of Warwick, Coventry CV4 7AL, UK
| | - Huiyun Liu
- Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK.
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11
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Gustafsson A, Jiang N, Zheng C, Etheridge J, Gao Q, Tan HH, Jagadish C, Wong-Leung J. Cathodoluminescence visualisation of local thickness variations of GaAs/AlGaAs quantum-well tubes on nanowires. NANOTECHNOLOGY 2020; 31:424001. [PMID: 32583811 DOI: 10.1088/1361-6528/ab9fb3] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We present spatially and spectrally resolved emission from nanowires with a thin radial layer of GaAs embedded in AlGaAs barriers, grown radially around taper-free GaAs cores. The GaAs layers are thin enough to show quantization, and are quantum wells. Due to their shape, they are referred to as quantum well tubes (QWTs). We have investigated three different nominal QWT thicknesses: 1.5, 2.0, and 6.0 nm. They all show average emission spectra from the QWT with an energy spread corresponding to a thickness variation of ±30%. We observe no thickness gradient along the length of the nanowires. Individual NWs show a number of peaks, corresponding to different QW thicknesses. Apart from the thinnest QWT, the integrated emission from the QWTs shows homogeneous emission intensity along the NW. The thinnest QWTs show patchy emission patterns due to the incomplete coverage of the QWT. We observe a few NWs with larger diameters. The QWTs in these NWs show spatially resolved variations across the NW. An increase in the local thickness of the QWT at the corners blocks the diffusion of carriers from facet to facet, thereby enabling us to visualise the thickness variations of the radial quantum wells.
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Affiliation(s)
- Anders Gustafsson
- Solid State Physics and NanoLund, Lund University, Box 118, SE-221 00, Lund, Sweden
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12
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Yang X, Shan Z, Luo Z, Hu X, Liu H, Liu Q, Zhang Y, Zhang X, Shoaib M, Qu J, Yi X, Wang X, Zhu X, Liu Y, Liao L, Wang X, Chen S, Pan A. An Electrically Controlled Wavelength-Tunable Nanoribbon Laser. ACS NANO 2020; 14:3397-3404. [PMID: 32052962 DOI: 10.1021/acsnano.9b09301] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Nanoscale laser sources with downscaled device footprint, high energy efficiency, and high operation speed are pivotal for a wide array of optoelectronic and nanophotonic applications ranging from on-chip interconnects, nanospectroscopy, and sensing to optical communication. The capability of on-demand lasing output with reversible and continuous wavelength tunability over a broad spectral range enables key functionalities in wavelength-division multiplexing and finely controlled light-matter interaction, which remains an important subject under intense research. In this study, we demonstrate an electrically controlled wavelength-tunable laser based on a CdS nanoribbon (NR) structure. Typical "S"-shaped characteristics of pump power dependence were observed for dominant lasing lines, with concomitant line width narrowing. By applying an increased bias voltage across the NR device, the lasing resonance exhibits a continuous tuning from 510 to 520 nm for a bias field in the range 0-15.4 kV/cm. Systematic bias-dependent absorption and time-resolved photoluminescence (PL) measurements were performed, revealing a red-shifted band edge of gain medium and prolonged PL lifetime with increased electric field over the device. Both current-induced thermal reduction of the band gap and the Franz-Keldysh effect were identified to account for the modification of the lasing profile, with the former factor playing the leading role. Furthermore, dynamical switching of NR lasing was successfully demonstrated, yielding a modulation ratio up to ∼21 dB. The electrically tuned wavelength-reversible CdS NR laser in this work, therefore, presents an important step toward color-selective coherent emitters for future chip-based nanophotonic and optoelectronic circuitry.
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Affiliation(s)
- Xin Yang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Zhengping Shan
- Computer and Information Engineering College, Central South University of Forestry and Technology, Changsha 410004, Hunan, People's Republic of China
| | - Ziyu Luo
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Xuelu Hu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Huawei Liu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Qingbo Liu
- College of Physics and Electronics, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Yushuang Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Xuehong Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Muhammad Shoaib
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Junyu Qu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Xiao Yi
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Xiao Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Xiaoli Zhu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Yuan Liu
- College of Physics and Electronics, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Lei Liao
- College of Physics and Electronics, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Xingjun Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China
| | - Shula Chen
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People's Republic of China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, Hunan, People's Republic of China
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13
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Stehr JE, Balagula RM, Jansson M, Yukimune M, Fujiwara R, Ishikawa F, Chen WM, Buyanova IA. Effects of growth temperature and thermal annealing on optical quality of GaNAs nanowires emitting in the near-infrared spectral range. NANOTECHNOLOGY 2020; 31:065702. [PMID: 31658456 DOI: 10.1088/1361-6528/ab51cd] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
We report on optimization of growth conditions of GaAs/GaNAs/GaAs core/shell/shell nanowire (NW) structures emitting at ∼1 μm, aiming to increase their light emitting efficiency. A slight change in growth temperature is found to critically affect optical quality of the active GaNAs shell and is shown to result from suppressed formation of non-radiative recombination (NRR) centers under the optimum growth temperature. By employing the optically detected magnetic resonance spectroscopy, we identify gallium vacancies and gallium interstitials as being among the dominant NRR defects. The radiative efficiency of the NWs can be further improved by post-growth annealing at 680 °C, which removes the gallium interstitials.
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Affiliation(s)
- J E Stehr
- Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden
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14
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Fust S, Faustmann A, Carrad DJ, Bissinger J, Loitsch B, Döblinger M, Becker J, Abstreiter G, Finley JJ, Koblmüller G. Quantum-Confinement-Enhanced Thermoelectric Properties in Modulation-Doped GaAs-AlGaAs Core-Shell Nanowires. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1905458. [PMID: 31814176 DOI: 10.1002/adma.201905458] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/22/2019] [Revised: 11/19/2019] [Indexed: 06/10/2023]
Abstract
Nanowires (NWs) hold great potential in advanced thermoelectrics due to their reduced dimensions and low-dimensional electronic character. However, unfavorable links between electrical and thermal conductivity in state-of-the-art unpassivated NWs have, so far, prevented the full exploitation of their distinct advantages. A promising model system for a surface-passivated one-dimensional (1D)-quantum confined NW thermoelectric is developed that enables simultaneously the observation of enhanced thermopower via quantum oscillations in the thermoelectric transport and a strong reduction in thermal conductivity induced by the core-shell heterostructure. High-mobility modulation-doped GaAs/AlGaAs core-shell NWs with thin (sub-40 nm) GaAs NW core channel are employed, where the electrical and thermoelectric transport is characterized on the same exact 1D-channel. 1D-sub-band transport at low temperature is verified by a discrete stepwise increase in the conductance, which coincided with strong oscillations in the corresponding Seebeck voltage that decay with increasing sub-band number. Peak Seebeck coefficients as high as ≈65-85 µV K-1 are observed for the lowest sub-bands, resulting in equivalent thermopower of S2 σ ≈ 60 µW m-1 K-2 and S2 G ≈ 0.06 pW K-2 within a single sub-band. Remarkably, these core-shell NW heterostructures also exhibit thermal conductivities as low as ≈3 W m-1 K-1 , about one order of magnitude lower than state-of-the-art unpassivated GaAs NWs.
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Affiliation(s)
- Sergej Fust
- Walter Schottky Institut and Physik Department, Technical University of Munich, Am Coulombwall 4, 85748, Garching, Germany
| | - Anton Faustmann
- Walter Schottky Institut and Physik Department, Technical University of Munich, Am Coulombwall 4, 85748, Garching, Germany
| | - Damon J Carrad
- Walter Schottky Institut and Physik Department, Technical University of Munich, Am Coulombwall 4, 85748, Garching, Germany
| | - Jochen Bissinger
- Walter Schottky Institut and Physik Department, Technical University of Munich, Am Coulombwall 4, 85748, Garching, Germany
| | - Bernhard Loitsch
- Walter Schottky Institut and Physik Department, Technical University of Munich, Am Coulombwall 4, 85748, Garching, Germany
| | - Markus Döblinger
- Department of Chemistry, Ludwig-Maximilians-University Munich, Butenandtstr. 11, 81377, Munich, Germany
| | - Jonathan Becker
- Walter Schottky Institut and Physik Department, Technical University of Munich, Am Coulombwall 4, 85748, Garching, Germany
| | - Gerhard Abstreiter
- Walter Schottky Institut and Physik Department, Technical University of Munich, Am Coulombwall 4, 85748, Garching, Germany
| | - Jonathan J Finley
- Walter Schottky Institut and Physik Department, Technical University of Munich, Am Coulombwall 4, 85748, Garching, Germany
| | - Gregor Koblmüller
- Walter Schottky Institut and Physik Department, Technical University of Munich, Am Coulombwall 4, 85748, Garching, Germany
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15
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Alanis JA, Chen Q, Lysevych M, Burgess T, Li L, Liu Z, Tan HH, Jagadish C, Parkinson P. Threshold reduction and yield improvement of semiconductor nanowire lasers via processing-related end-facet optimization. NANOSCALE ADVANCES 2019; 1:4393-4397. [PMID: 36134418 PMCID: PMC9417496 DOI: 10.1039/c9na00479c] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/05/2019] [Accepted: 10/01/2019] [Indexed: 06/01/2023]
Abstract
Both gain medium design and cavity geometry are known to be important for low threshold operation of semiconductor nanowire lasers. For many applications nanowire lasers need to be transferred from the growth substrate to a low-index substrate; however, the impact of the transfer process on optoelectronic performance has not been studied. Ultrasound, PDMS-assisted and mechanical rubbing are the most commonly used methods for nanowire transfer; each method may cause changes in the fracture point of the nanowire which can potentially affect both length and end-face mirror quality. Here we report on four common approaches for nanowire transfer. Our results show that brief ultrasound and PDMS-assisted transfer lead to optimized optoelectronic performance, as confirmed by ensemble median lasing threshold values of 98 and 104 μJ cm-2 respectively, with nanowires transferred by ultrasound giving a high lasing yield of 72%. The mean threshold difference between samples is shown to be statistically significant: while a significant difference in mean length from different transfer methods is seen, it is shown by SEM that end-facet quality is also affected and plays an important role on threshold gain for this nanowire architecture.
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Affiliation(s)
- Juan Arturo Alanis
- Department of Physics and Astronomy and the Photon Science Institute, The University of Manchester Manchester UK
| | - Qian Chen
- Department of Materials, The University of Manchester Manchester UK
| | - Mykhaylo Lysevych
- Australian National Fabrication Facility, The Australian National University Canberra Australia
| | - Tim Burgess
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University Canberra Australia
| | - Li Li
- Australian National Fabrication Facility, The Australian National University Canberra Australia
| | - Zhu Liu
- Department of Materials, The University of Manchester Manchester UK
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University Canberra Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University Canberra Australia
| | - Patrick Parkinson
- Department of Physics and Astronomy and the Photon Science Institute, The University of Manchester Manchester UK
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16
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Lähnemann J, Hill MO, Herranz J, Marquardt O, Gao G, Al Hassan A, Davtyan A, Hruszkewycz SO, Holt MV, Huang C, Calvo-Almazán I, Jahn U, Pietsch U, Lauhon LJ, Geelhaar L. Correlated Nanoscale Analysis of the Emission from Wurtzite versus Zincblende (In,Ga)As/GaAs Nanowire Core-Shell Quantum Wells. NANO LETTERS 2019; 19:4448-4457. [PMID: 31141672 DOI: 10.1021/acs.nanolett.9b01241] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
While the properties of wurtzite GaAs have been extensively studied during the past decade, little is known about the influence of the crystal polytype on ternary (In,Ga)As quantum well structures. We address this question with a unique combination of correlated, spatially resolved measurement techniques on core-shell nanowires that contain extended segments of both the zincblende and wurtzite polytypes. Cathodoluminescence hyperspectral imaging reveals a blue-shift of the quantum well emission energy by 75 ± 15 meV in the wurtzite polytype segment. Nanoprobe X-ray diffraction and atom probe tomography enable k·p calculations for the specific sample geometry to reveal two comparable contributions to this shift. First, there is a 30% drop in In mole fraction going from the zincblende to the wurtzite segment. Second, the quantum well is under compressive strain, which has a much stronger impact on the hole ground state in the wurtzite than in the zincblende segment. Our results highlight the role of the crystal structure in tuning the emission of (In,Ga)As quantum wells and pave the way to exploit the possibilities of three-dimensional band gap engineering in core-shell nanowire heterostructures. At the same time, we have demonstrated an advanced characterization toolkit for the investigation of semiconductor nanostructures.
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Affiliation(s)
- Jonas Lähnemann
- Paul-Drude-Institut für Festkörperelektronik , Leibniz-Institut im Forschungsverbund Berlin e.V. , Hausvogteiplatz 5-7 , 10117 Berlin , Germany
| | - Megan O Hill
- Department of Materials Science and Engineering , Northwestern University , Evanston , Illinois 60208 , United States
| | - Jesús Herranz
- Paul-Drude-Institut für Festkörperelektronik , Leibniz-Institut im Forschungsverbund Berlin e.V. , Hausvogteiplatz 5-7 , 10117 Berlin , Germany
| | - Oliver Marquardt
- Weierstraß-Institut für Angewandte Analysis und Stochastik , Leibniz-Institut im Forschungsverbund Berlin e.V. , Mohrenstr. 39 , 10117 Berlin , Germany
| | - Guanhui Gao
- Paul-Drude-Institut für Festkörperelektronik , Leibniz-Institut im Forschungsverbund Berlin e.V. , Hausvogteiplatz 5-7 , 10117 Berlin , Germany
| | - Ali Al Hassan
- Naturwissenschaftlich-Technische Fakultät der Universität Siegen , 57068 Siegen , Germany
| | - Arman Davtyan
- Naturwissenschaftlich-Technische Fakultät der Universität Siegen , 57068 Siegen , Germany
| | - Stephan O Hruszkewycz
- Materials Science Division , Argonne National Laboratory , Argonne , Illinois 60439 , United States
| | - Martin V Holt
- Center for Nanoscale Materials , Argonne National Laboratory , Argonne , Illinois 60439 , United States
| | - Chunyi Huang
- Department of Materials Science and Engineering , Northwestern University , Evanston , Illinois 60208 , United States
| | - Irene Calvo-Almazán
- Materials Science Division , Argonne National Laboratory , Argonne , Illinois 60439 , United States
| | - Uwe Jahn
- Paul-Drude-Institut für Festkörperelektronik , Leibniz-Institut im Forschungsverbund Berlin e.V. , Hausvogteiplatz 5-7 , 10117 Berlin , Germany
| | - Ullrich Pietsch
- Naturwissenschaftlich-Technische Fakultät der Universität Siegen , 57068 Siegen , Germany
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering , Northwestern University , Evanston , Illinois 60208 , United States
| | - Lutz Geelhaar
- Paul-Drude-Institut für Festkörperelektronik , Leibniz-Institut im Forschungsverbund Berlin e.V. , Hausvogteiplatz 5-7 , 10117 Berlin , Germany
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17
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Zhang Y, Davis G, Fonseka HA, Velichko A, Gustafsson A, Godde T, Saxena D, Aagesen M, Parkinson PW, Gott JA, Huo S, Sanchez AM, Mowbray DJ, Liu H. Highly Strained III-V-V Coaxial Nanowire Quantum Wells with Strong Carrier Confinement. ACS NANO 2019; 13:5931-5938. [PMID: 31067033 PMCID: PMC7007272 DOI: 10.1021/acsnano.9b01775] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/05/2019] [Accepted: 05/08/2019] [Indexed: 06/01/2023]
Abstract
Coaxial quantum wells (QWs) are ideal candidates for nanowire (NW) lasers, providing strong carrier confinement and allowing close matching of the cavity mode and gain medium. We report a detailed structural and optical study and the observation of lasing for a mixed group-V GaAsP NW with GaAs QWs. This system offers a number of potential advantages in comparison to previously studied common group-V structures ( e. g., AlGaAs/GaAs) including highly strained binary GaAs QWs, the absence of a lower band gap core region, and deep carrier potential wells. Despite the large lattice mismatch (∼1.7%), it is possible to grow defect-free GaAs coaxial QWs with high optical quality. The large band gap difference results in strong carrier confinement, and the ability to apply a high degree of compressive strain to the GaAs QWs is also expected to be beneficial for laser performance. For a non-fully optimized structure containing three QWs, we achieve low-temperature lasing with a low external (internal) threshold of 20 (0.9) μJ/cm2/pulse. In addition, a very narrow lasing line width of ∼0.15 nm is observed. These results extend the NW laser structure to coaxial III-V-V QWs, which are highly suitable as the platform for NW emitters.
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Affiliation(s)
- Yunyan Zhang
- Department
of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom
| | - George Davis
- Department
of Physics and Astronomy and the Photon Science Institute, University of Sheffield, Sheffield S3 7RH, United Kingdom
| | - H. Aruni Fonseka
- Department
of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
| | - Anton Velichko
- Department
of Physics and Astronomy and the Photon Science Institute, University of Sheffield, Sheffield S3 7RH, United Kingdom
| | - Anders Gustafsson
- Solid
State Physics and NanoLund, Lund University, Box 118, SE-221 00 Lund, Sweden
| | - Tillmann Godde
- Department
of Physics and Astronomy and the Photon Science Institute, University of Sheffield, Sheffield S3 7RH, United Kingdom
| | - Dhruv Saxena
- The
Blackett Laboratory, Department of Physics, Imperial College London, London SW7 2AZ, United Kingdom
| | - Martin Aagesen
- Danish
Defence Research Center, Lautrupbjerg 1-5, 2750 Ballerup, Denmark
| | - Patrick W. Parkinson
- School
of Physics and Astronomy and the Photon Science Institute, University of Manchester, Manchester M13 9PL, United Kingdom
| | - James A. Gott
- Department
of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
| | - Suguo Huo
- London
Centre for Nanotechnology, University College
London, London WC1H 0AH, United Kingdom
| | - Ana M. Sanchez
- Department
of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
| | - David J. Mowbray
- Department
of Physics and Astronomy and the Photon Science Institute, University of Sheffield, Sheffield S3 7RH, United Kingdom
| | - Huiyun Liu
- Department
of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom
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18
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Zhang Y, Saxena D, Aagesen M, Liu H. Toward electrically driven semiconductor nanowire lasers. NANOTECHNOLOGY 2019; 30:192002. [PMID: 30658345 DOI: 10.1088/1361-6528/ab000d] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Semiconductor nanowire (NW) lasers are highly promising for making new-generation coherent light sources with the advantages of ultra-small size, high efficiency, easy integration and low cost. Over the past 15 years, this area of research has been developing rapidly, with extensive reports of optically pumped lasing in various inorganic and organic semiconductor NWs. Motivated by these developments, substantial efforts are being made to make NW lasers electrically pumped, which is necessary for their practical implementation. In this review, we first categorize NW lasers according to their lasing wavelength and wavelength tunability. Then, we summarize the methods used for achieving single-mode lasing in NWs. After that, we review reports on lasing threshold reduction and the realization of electrically pumped NW lasers. Finally, we offer our perspective on future improvements and trends.
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Affiliation(s)
- Yunyan Zhang
- Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom
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19
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Sonner MM, Sitek A, Janker L, Rudolph D, Ruhstorfer D, Döblinger M, Manolescu A, Abstreiter G, Finley JJ, Wixforth A, Koblmüller G, Krenner HJ. Breakdown of Corner States and Carrier Localization by Monolayer Fluctuations in Radial Nanowire Quantum Wells. NANO LETTERS 2019; 19:3336-3343. [PMID: 31013103 DOI: 10.1021/acs.nanolett.9b01028] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
We report a comprehensive study of the impact of the structural properties in radial GaAs-Al0.3Ga0.7As nanowire-quantum well heterostructures on the optical recombination dynamics and electrical transport properties, emphasizing particularly the role of the commonly observed variations of the quantum well thickness at different facets. Typical thickness fluctuations of the radial quantum well observed by transmission electron microscopy lead to pronounced localization. Our optical data exhibit clear spectral shifts and a multipeak structure of the emission for such asymmetric ring structures resulting from spatially separated, yet interconnected quantum well systems. Charge carrier dynamics induced by a surface acoustic wave are resolved and prove efficient carrier exchange on native, subnanosecond time scales within the heterostructure. Experimental findings are corroborated by theoretical modeling, which unambiguously show that electrons and holes localize on facets where the quantum well is the thickest and that even minute deviations of the perfect hexagonal shape strongly perturb the commonly assumed 6-fold symmetric ground state.
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Affiliation(s)
- Maximilian M Sonner
- Lehrstuhl für Experimentalphysik 1, Institut für Physik and Augsburg Centre for Innovative Technologies (ACIT) , Universität Augsburg , Universitätsstr. 1 , 86159 Augsburg , Germany
- Nanosystems Initiative Munich (NIM) , Schellingstr. 4 , 80799 München , Germany
| | - Anna Sitek
- School of Science and Engineering , Reykjavik University , Menntavegur 1 , 101 Reykjavik , Iceland
- Department of Theoretical Physics, Faculty of Fundamental Problems of Technology , Wroclaw University of Science and Technology , Wybrzeże Wyspiańskiego 27 , 50-370 Wroclaw , Poland
| | - Lisa Janker
- Lehrstuhl für Experimentalphysik 1, Institut für Physik and Augsburg Centre for Innovative Technologies (ACIT) , Universität Augsburg , Universitätsstr. 1 , 86159 Augsburg , Germany
- Nanosystems Initiative Munich (NIM) , Schellingstr. 4 , 80799 München , Germany
| | - Daniel Rudolph
- Nanosystems Initiative Munich (NIM) , Schellingstr. 4 , 80799 München , Germany
- Walter Schottky Institut and Physik Department , Technische Universität München , Am Coulombwall 4 , 85748 Garching , Germany
| | - Daniel Ruhstorfer
- Nanosystems Initiative Munich (NIM) , Schellingstr. 4 , 80799 München , Germany
- Walter Schottky Institut and Physik Department , Technische Universität München , Am Coulombwall 4 , 85748 Garching , Germany
| | - Markus Döblinger
- Nanosystems Initiative Munich (NIM) , Schellingstr. 4 , 80799 München , Germany
- Department of Chemistry , Ludwig-Maximilians-Universität München , Butenandtstr. 5-13(E) , 81377 München , Germany
| | - Andrei Manolescu
- School of Science and Engineering , Reykjavik University , Menntavegur 1 , 101 Reykjavik , Iceland
| | - Gerhard Abstreiter
- Nanosystems Initiative Munich (NIM) , Schellingstr. 4 , 80799 München , Germany
- Walter Schottky Institut and Physik Department , Technische Universität München , Am Coulombwall 4 , 85748 Garching , Germany
| | - Jonathan J Finley
- Nanosystems Initiative Munich (NIM) , Schellingstr. 4 , 80799 München , Germany
- Walter Schottky Institut and Physik Department , Technische Universität München , Am Coulombwall 4 , 85748 Garching , Germany
| | - Achim Wixforth
- Lehrstuhl für Experimentalphysik 1, Institut für Physik and Augsburg Centre for Innovative Technologies (ACIT) , Universität Augsburg , Universitätsstr. 1 , 86159 Augsburg , Germany
- Nanosystems Initiative Munich (NIM) , Schellingstr. 4 , 80799 München , Germany
| | - Gregor Koblmüller
- Nanosystems Initiative Munich (NIM) , Schellingstr. 4 , 80799 München , Germany
- Walter Schottky Institut and Physik Department , Technische Universität München , Am Coulombwall 4 , 85748 Garching , Germany
| | - Hubert J Krenner
- Lehrstuhl für Experimentalphysik 1, Institut für Physik and Augsburg Centre for Innovative Technologies (ACIT) , Universität Augsburg , Universitätsstr. 1 , 86159 Augsburg , Germany
- Nanosystems Initiative Munich (NIM) , Schellingstr. 4 , 80799 München , Germany
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20
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Adams MJ, Jevtics D, Strain MJ, Henning ID, Hurtado A. High-frequency dynamics of evanescently-coupled nanowire lasers. Sci Rep 2019; 9:6126. [PMID: 30992501 PMCID: PMC6467891 DOI: 10.1038/s41598-019-42526-x] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/27/2018] [Accepted: 04/02/2019] [Indexed: 11/30/2022] Open
Abstract
We analyse the dynamics and conditions for stability in an array of two laterally-coupled nanowire lasers in terms of their separation, difference in resonant frequencies and pumping rate under conditions of weak coupling. We find that the regions of stability are very small and are found close to zero frequency offset between the lasers. Outside these regions various forms of instability including periodic oscillation, chaos and complex dynamics are predicted. Importantly, the analysis of the frequency of periodic oscillations for realistic laser separations and pumping yields values of order 100 GHz thus underlining the significant potential of nanowire laser arrays for ultra-high frequency on-chip systems with very low foot-print and energy requirements.
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Affiliation(s)
- M J Adams
- School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, Colchester, CO4 3SQ, UK
| | - D Jevtics
- Institute of Photonics, SUPA Department of Physics, University of Strathclyde, TIC Centre, 99 George Street, Glasgow, G1 1RD, UK
| | - M J Strain
- Institute of Photonics, SUPA Department of Physics, University of Strathclyde, TIC Centre, 99 George Street, Glasgow, G1 1RD, UK
| | - I D Henning
- School of Computer Science and Electronic Engineering, University of Essex, Wivenhoe Park, Colchester, CO4 3SQ, UK
| | - A Hurtado
- Institute of Photonics, SUPA Department of Physics, University of Strathclyde, TIC Centre, 99 George Street, Glasgow, G1 1RD, UK.
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21
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Wang LB, Pan D, Huang GY, Zhao J, Kang N, Xu HQ. Crossover from Coulomb blockade to ballistic transport in InAs nanowire devices. NANOTECHNOLOGY 2019; 30:124001. [PMID: 30566928 DOI: 10.1088/1361-6528/aaf9d4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
We report on the observation of a crossover from the single electron Coulomb blockade regime to the ballistic transport in individual InAs semiconducting nanowire devices. The InAs nanowires studied here were grown by molecular-beam epitaxy (MBE), which provides a clean system to study the intrinsic electrons transport in a quasi-one-dimensional system. Quantized conductance plateaus are observed for an InAs nanowire-based device by changing the Fermi level with a global back gate at low temperature, suggesting the ballistic transport of electrons. Further lowering the temperature, we observe the Coulomb blockade phenomenon with the formation of the quantum dot between the two normal metal contacts. By increasing the electron density, the characteristic Fabry-Pérot oscillations are observed, which further provides evidence for the ballistic nature of transport in the InAs nanowire device. Our observations indicate that high-quality InAs nanowires grown by MBE behave as clean quantum wires at low temperatures, which enables us to investigate novel phenomena in the quasi-one-dimensional system.
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Affiliation(s)
- L B Wang
- Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People's Republic of China
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22
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Chen S, Yukimune M, Fujiwara R, Ishikawa F, Chen WM, Buyanova IA. Near-Infrared Lasing at 1 μm from a Dilute-Nitride-Based Multishell Nanowire. NANO LETTERS 2019; 19:885-890. [PMID: 30608174 DOI: 10.1021/acs.nanolett.8b04103] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
A coherent photon source emitting at near-infrared (NIR) wavelengths is at the heart of a wide variety of applications ranging from telecommunications and optical gas sensing to biological imaging and metrology. NIR-emitting semiconductor nanowires (NWs), acting both as a miniaturized optical resonator and as a photonic gain medium, are among the best-suited nanomaterials to achieve such goals. In this study, we demonstrate the NIR lasing at 1 μm from GaAs/GaNAs/GaAs core/shell/cap dilute nitride nanowires with only 2.5% nitrogen. The achieved lasing is characterized by an S-shape pump-power dependence and narrowing of the emission line width. Through examining the lasing performance from a set of different single NWs, a threshold gain, gth, of 4100-4800 cm-1, was derived with a spontaneous emission coupling factor, β, up to 0.8, which demonstrates the great potential of such nanophotonic material. The lasing mode was found to arise from the fundamental HE11a mode of the Fabry-Perot cavity from a single NW, exhibiting optical polarization along the NW axis. Based on temperature dependence of the lasing emission, a high characteristic temperature, T0, of 160 (±10) K is estimated. Our results, therefore, demonstrate a promising alternative route to achieve room-temperature NIR NW lasers thanks to the excellent alloy tunability and superior optical performance of such dilute nitride materials.
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Affiliation(s)
- Shula Chen
- Department of Physics, Chemistry and Biology , Linköping University , 58183 Linköping , Sweden
| | - Mitsuki Yukimune
- Graduate School of Science and Engineering , Ehime University , Matsuyama 790-8577 , Japan
| | - Ryo Fujiwara
- Graduate School of Science and Engineering , Ehime University , Matsuyama 790-8577 , Japan
| | - Fumitaro Ishikawa
- Graduate School of Science and Engineering , Ehime University , Matsuyama 790-8577 , Japan
| | - Weimin M Chen
- Department of Physics, Chemistry and Biology , Linköping University , 58183 Linköping , Sweden
| | - Irina A Buyanova
- Department of Physics, Chemistry and Biology , Linköping University , 58183 Linköping , Sweden
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23
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Zhang G, Takiguchi M, Tateno K, Tawara T, Notomi M, Gotoh H. Telecom-band lasing in single InP/InAs heterostructure nanowires at room temperature. SCIENCE ADVANCES 2019; 5:eaat8896. [PMID: 30801006 PMCID: PMC6386577 DOI: 10.1126/sciadv.aat8896] [Citation(s) in RCA: 27] [Impact Index Per Article: 5.4] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/16/2018] [Accepted: 12/28/2018] [Indexed: 05/28/2023]
Abstract
Telecom-band single nanowire lasers made by the bottom-up vapor-liquid-solid approach, which is technologically important in optical fiber communication systems, still remain challenging. Here, we report telecom-band single nanowire lasers operating at room temperature based on multi-quantum-disk InP/InAs heterostructure nanowires. Transmission electron microscopy studies show that highly uniform multi-quantum-disk InP/InAs structure is grown in InP nanowires by self-catalyzed vapor-liquid-solid mode using indium particle catalysts. Optical excitation of individual nanowires yielded lasing in telecom band operating at room temperature. We show the tunability of laser wavelength range in telecom band by modulating the thickness of single InAs quantum disks through quantum confinement along the axial direction. The demonstration of telecom-band single nanowire lasers operating at room temperature is a major step forward in providing practical integrable coherent light sources for optoelectronics and data communication.
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Affiliation(s)
- Guoqiang Zhang
- NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
- NTT Nanophotonics Center, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
| | - Masato Takiguchi
- NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
- NTT Nanophotonics Center, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
| | - Kouta Tateno
- NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
- NTT Nanophotonics Center, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
| | - Takehiko Tawara
- NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
- NTT Nanophotonics Center, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
| | - Masaya Notomi
- NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
- NTT Nanophotonics Center, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
| | - Hideki Gotoh
- NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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24
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Alanis JA, Lysevych M, Burgess T, Saxena D, Mokkapati S, Skalsky S, Tang X, Mitchell P, Walton AS, Tan HH, Jagadish C, Parkinson P. Optical Study of p-Doping in GaAs Nanowires for Low-Threshold and High-Yield Lasing. NANO LETTERS 2019; 19:362-368. [PMID: 30525674 DOI: 10.1021/acs.nanolett.8b04048] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
Semiconductor nanowires suffer from significant non-radiative surface recombination; however, heavy p-type doping has proven to be a viable option to increase the radiative recombination rate and, hence, quantum efficiency of emission, allowing the demonstration of room-temperature lasing. Using a large-scale optical technique, we have studied Zn-doped GaAs nanowires to understand and quantify the effect of doping on growth and lasing properties. We measure the non-radiative recombination rate ( knr) to be (0.14 ± 0.04) ps-1 by modeling the internal quantum efficiency (IQE) as a function of doping level. By applying a correlative method, we identify doping and nanowire length as key controllable parameters determining lasing behavior, with reliable room-temperature lasing occurring for p ≳ 3 × 1018 cm-3 and lengths of ≳4 μm. We report a best-in-class core-only near-infrared nanowire lasing threshold of ∼10 μJ cm-2, and using a data-led filtering step, we present a method to simply identify subsets of nanowires with over 90% lasing yield.
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Affiliation(s)
| | | | | | - Dhruv Saxena
- The Blackett Laboratory, Department of Physics , Imperial College London , London SW7 2AZ , United Kingdom
| | - Sudha Mokkapati
- School of Physics and Astronomy and the Institute for Compound Semiconductors , Cardiff University , Cardiff , CF10 3AT , United Kingdom
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25
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Li H, Tang J, Pang G, Wang D, Fang X, Chen R, Wei Z. Optical characteristics of GaAs/GaAsSb/GaAs coaxial single quantum-well nanowires with different Sb components. RSC Adv 2019; 9:38114-38118. [PMID: 35541770 PMCID: PMC9075889 DOI: 10.1039/c9ra08451g] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/16/2019] [Accepted: 11/13/2019] [Indexed: 12/26/2022] Open
Abstract
III–V ternary alloy quantum-wells have become a hot topic in recent years. Especially, GaAs/GaAsSb quantum wells have attracted increasing attention due to their numerous applications in the field of near-infrared optoelectronic devices. With the further reduction of dimensions, GaAs/GaAsSb nanowires show many special properties compared to their quantum well structures. In this work, GaAs/GaAs1−xSbx/GaAs coaxial single quantum-well nanowires with different Sb composition were grown by molecular beam epitaxy. The band structure and the optical properties were investigated through power-dependent and temperature-dependent photoluminescence measurement. It has been found that a deeper quantum well is created with the increase of Sb component. Thanks to the deeper quantum well, more effective electron confinement has been realized, the emission from the sample can still be detected up to room temperature. The different trend of peak position and shape at various temperatures also supports the improved temperature stability of the samples. These results will be beneficial for the design of alloy quantum wells, and will facilitate the development of alloy quantum-well based devices. GaAs/GaAs1−xSbx/GaAs coaxial single quantum-well nanowires with larger Sb content result in better electron confinement, which greatly improves their thermal stability.![]()
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Affiliation(s)
- Haolin Li
- State Key Laboratory of High Power Semiconductor Laser
- School of Science
- Changchun University of Science and Technology
- Changchun 130022
- P. R. China
| | - Jilong Tang
- State Key Laboratory of High Power Semiconductor Laser
- School of Science
- Changchun University of Science and Technology
- Changchun 130022
- P. R. China
| | - Guotao Pang
- Department of Electrical and Electronic Engineering
- Southern University of Science and Technology
- Shenzhen
- P. R. China
| | - Dengkui Wang
- State Key Laboratory of High Power Semiconductor Laser
- School of Science
- Changchun University of Science and Technology
- Changchun 130022
- P. R. China
| | - Xuan Fang
- State Key Laboratory of High Power Semiconductor Laser
- School of Science
- Changchun University of Science and Technology
- Changchun 130022
- P. R. China
| | - Rui Chen
- Department of Electrical and Electronic Engineering
- Southern University of Science and Technology
- Shenzhen
- P. R. China
| | - Zhipeng Wei
- State Key Laboratory of High Power Semiconductor Laser
- School of Science
- Changchun University of Science and Technology
- Changchun 130022
- P. R. China
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