1
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Lei Y, Ma J, Luo J, Huang S, Yu B, Song C, Xing Q, Wang F, Xie Y, Zhang J, Mu L, Ma Y, Wang C, Yan H. Layer-dependent exciton polarizability and the brightening of dark excitons in few-layer black phosphorus. Nat Commun 2023; 14:5314. [PMID: 37658093 PMCID: PMC10474117 DOI: 10.1038/s41467-023-41126-8] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/09/2022] [Accepted: 08/24/2023] [Indexed: 09/03/2023] Open
Abstract
The evolution of excitons from 2D to 3D is of great importance in photo-physics, yet the layer-dependent exciton polarizability hasn't been investigated in 2D semiconductors. Here, we determine the exciton polarizabilities for 3- to 11-layer black phosphorus-a direct bandgap semiconductor regardless of the thickness-through frequency-resolved photocurrent measurements on dual-gate devices and unveil the carrier screening effect in relatively thicker samples. By taking advantage of the broadband photocurrent spectra, we are also able to reveal the exciton response for higher-index subbands under the gate electrical field. Surprisingly, dark excitons are brightened with intensity even stronger than the allowed transitions above certain electrical field. Our study not only sheds light on the exciton evolution with sample thickness, but also paves a way for optoelectronic applications of few-layer BP in modulators, tunable photodetectors, emitters and lasers.
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Affiliation(s)
- Yuchen Lei
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai, 200433, China
| | - Junwei Ma
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai, 200433, China
| | - Jiaming Luo
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai, 200433, China
| | - Shenyang Huang
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai, 200433, China
| | - Boyang Yu
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai, 200433, China
| | - Chaoyu Song
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai, 200433, China
| | - Qiaoxia Xing
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai, 200433, China
| | - Fanjie Wang
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai, 200433, China
| | - Yuangang Xie
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai, 200433, China
| | - Jiasheng Zhang
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai, 200433, China
| | - Lei Mu
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai, 200433, China
| | - Yixuan Ma
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai, 200433, China
| | - Chong Wang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Hugen Yan
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai, 200433, China.
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2
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Margot F, Lisi S, Cucchi I, Cappelli E, Hunter A, Gutiérrez-Lezama I, Ma K, von Rohr F, Berthod C, Petocchi F, Poncé S, Marzari N, Gibertini M, Tamai A, Morpurgo AF, Baumberger F. Electronic Structure of Few-Layer Black Phosphorus from μ-ARPES. NANO LETTERS 2023; 23:6433-6439. [PMID: 37460109 PMCID: PMC10375583 DOI: 10.1021/acs.nanolett.3c01226] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/27/2023]
Abstract
Black phosphorus (BP) stands out among two-dimensional (2D) semiconductors because of its high mobility and thickness dependent direct band gap. However, the quasiparticle band structure of ultrathin BP has remained inaccessible to experiment thus far. Here we use a recently developed laser-based microfocus angle resolved photoemission (μ-ARPES) system to establish the electronic structure of 2-9 layer BP from experiment. Our measurements unveil ladders of anisotropic, quantized subbands at energies that deviate from the scaling observed in conventional semiconductor quantum wells. We quantify the anisotropy of the effective masses and determine universal tight-binding parameters, which provide an accurate description of the electronic structure for all thicknesses.
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Affiliation(s)
- Florian Margot
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Simone Lisi
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Irène Cucchi
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Edoardo Cappelli
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Andrew Hunter
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Ignacio Gutiérrez-Lezama
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
- Group of Applied Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - KeYuan Ma
- Department of Chemistry, University of Zürich, Winterthurerstrasse 190, CH-8057 Zürich, Switzerland
| | - Fabian von Rohr
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Christophe Berthod
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Francesco Petocchi
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Samuel Poncé
- Institute of Condensed Matter and Nanosciences, Université catholique de Louvain, BE-1348 Louvain-la-Neuve, Belgium
| | - Nicola Marzari
- Laboratory of Theory and Simulation of Materials, École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
| | - Marco Gibertini
- Dipartimento di Scienze Fisiche, Informatiche e Matematiche, University of Modena and Reggio Emilia, 41125 Modena, Italy
| | - Anna Tamai
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Alberto F Morpurgo
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
- Group of Applied Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
| | - Felix Baumberger
- Department of Quantum Matter Physics, University of Geneva, 24 quai Ernest Ansermet, CH-1211 Geneva, Switzerland
- Swiss Light Source, Paul Scherrer Institute, CH-5232 Villigen, Switzerland
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3
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Li YX, Liu ZK, Cao J, Tao J, Yao ZS. Stress-Induced Inversion of Linear Dichroism by 4,4'-Bipyridine Rotation in a Superelastic Organic Single Crystal. Angew Chem Int Ed Engl 2023; 62:e202217977. [PMID: 36647773 DOI: 10.1002/anie.202217977] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/06/2022] [Revised: 01/13/2023] [Accepted: 01/16/2023] [Indexed: 01/18/2023]
Abstract
The molecular crystals that manifest unusual mechanical properties have attracted growing attention. Herein, we prepared an organic single crystal that shows bidirectional superelastic transformation in response to shear stress. Single-crystal X-ray diffractions revealed this crystal-twinning related shape change is owed to a stress-controlled 90° rotation of 4,4'-bipyridine around the hydrogen bonds of a chiral organic trimer. As a consequence of the 90° shift in the aromatic plane, an interconversion of crystallographic a-, b-axes (a→b' and b→a') was detected. The molecular rotations changed the anisotropic absorption of linearly polarized light. Therefore, a stress-induced inversion of linear dichroism spectra was demonstrated for the first time. This study reveals the superior mechanical flexibilities of single crystals can be realized by harnessing the molecular rotations and this superelastic crystal may find applications in optical switching and communications.
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Affiliation(s)
- Yu-Xia Li
- Key Laboratory of Cluster Science of Ministry of Education, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Zhi-Kun Liu
- Key Laboratory of Cluster Science of Ministry of Education, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Jie Cao
- School of Optoelectronics, Beijing Institute of Technology, Key Laboratory of Biomimetic Robots and Systems, Ministry of Education, Beijing, 100081, P. R. China
| | - Jun Tao
- Key Laboratory of Cluster Science of Ministry of Education, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Zi-Shuo Yao
- Key Laboratory of Cluster Science of Ministry of Education, School of Chemistry and Chemical Engineering, Beijing Institute of Technology, Beijing, 100081, P. R. China
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4
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Shi Z, Zhang H, Khan K, Cao R, Zhang Y, Ma C, Tareen AK, Jiang Y, Jin M, Zhang H. Two-dimensional materials toward Terahertz optoelectronic device applications. JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY C: PHOTOCHEMISTRY REVIEWS 2022. [DOI: 10.1016/j.jphotochemrev.2021.100473] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/09/2023]
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5
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Yang J, Gurung S, Bej S, Ni P, Howard Lee HW. Active optical metasurfaces: comprehensive review on physics, mechanisms, and prospective applications. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2022; 85:036101. [PMID: 35244609 DOI: 10.1088/1361-6633/ac2aaf] [Citation(s) in RCA: 25] [Impact Index Per Article: 12.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/30/2020] [Accepted: 09/28/2021] [Indexed: 06/14/2023]
Abstract
Optical metasurfaces with subwavelength thickness hold considerable promise for future advances in fundamental optics and novel optical applications due to their unprecedented ability to control the phase, amplitude, and polarization of transmitted, reflected, and diffracted light. Introducing active functionalities to optical metasurfaces is an essential step to the development of next-generation flat optical components and devices. During the last few years, many attempts have been made to develop tunable optical metasurfaces with dynamic control of optical properties (e.g., amplitude, phase, polarization, spatial/spectral/temporal responses) and early-stage device functions (e.g., beam steering, tunable focusing, tunable color filters/absorber, dynamic hologram, etc) based on a variety of novel active materials and tunable mechanisms. These recently-developed active metasurfaces show significant promise for practical applications, but significant challenges still remain. In this review, a comprehensive overview of recently-reported tunable metasurfaces is provided which focuses on the ten major tunable metasurface mechanisms. For each type of mechanism, the performance metrics on the reported tunable metasurface are outlined, and the capabilities/limitations of each mechanism and its potential for various photonic applications are compared and summarized. This review concludes with discussion of several prospective applications, emerging technologies, and research directions based on the use of tunable optical metasurfaces. We anticipate significant new advances when the tunable mechanisms are further developed in the coming years.
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Affiliation(s)
- Jingyi Yang
- Department of Physics & Astronomy, University of California, Irvine, CA 92697, United States of America
- Department of Physics, Baylor University, Waco, TX 76798, United States of America
| | - Sudip Gurung
- Department of Physics & Astronomy, University of California, Irvine, CA 92697, United States of America
- Department of Physics, Baylor University, Waco, TX 76798, United States of America
| | - Subhajit Bej
- Department of Physics, Baylor University, Waco, TX 76798, United States of America
| | - Peinan Ni
- Department of Physics, Baylor University, Waco, TX 76798, United States of America
| | - Ho Wai Howard Lee
- Department of Physics & Astronomy, University of California, Irvine, CA 92697, United States of America
- Department of Physics, Baylor University, Waco, TX 76798, United States of America
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6
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Huang S, Lu Y, Wang F, Lei Y, Song C, Zhang J, Xing Q, Wang C, Xie Y, Mu L, Zhang G, Yan H, Chen B, Yan H. Layer-Dependent Pressure Effect on the Electronic Structure of 2D Black Phosphorus. PHYSICAL REVIEW LETTERS 2021; 127:186401. [PMID: 34767429 DOI: 10.1103/physrevlett.127.186401] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/29/2021] [Accepted: 09/21/2021] [Indexed: 06/13/2023]
Abstract
Through infrared spectroscopy, we systematically study the pressure effect on electronic structures of few-layer black phosphorus (BP) with layer number ranging from 2 to 13. We reveal that the pressure-induced shift of optical transitions exhibits strong layer dependence. In sharp contrast to the bulk counterpart which undergoes a semiconductor to semimetal transition under ∼1.8 GPa, the band gap of 2 L increases with increasing pressure until beyond 2 GPa. Meanwhile, for a sample with a given layer number, the pressure-induced shift also differs for transitions with different indices. Through the tight-binding model in conjunction with a Morse potential for the interlayer coupling, this layer- and transition-index-dependent pressure effect can be fully accounted. Our study paves a way for versatile van der Waals engineering of two-dimensional BP.
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Affiliation(s)
- Shenyang Huang
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Yang Lu
- Center for High Pressure Science & Technology Advanced Research, Shanghai 201203, China
| | - Fanjie Wang
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Yuchen Lei
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Chaoyu Song
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Jiasheng Zhang
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Qiaoxia Xing
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Chong Wang
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Yuangang Xie
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Lei Mu
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai 200433, China
| | - Guowei Zhang
- Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an 710072, China
| | - Hao Yan
- CAS Key Laboratory of Experimental Study under Deep-sea Extreme Conditions, Institute of Deep-Sea Science and Engineering, Chinese Academy of Sciences, Sanya 572000, China
| | - Bin Chen
- Center for High Pressure Science & Technology Advanced Research, Shanghai 201203, China
| | - Hugen Yan
- State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), and Department of Physics, Fudan University, Shanghai 200433, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
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7
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Li M, Biswas S, Hail CU, Atwater HA. Refractive Index Modulation in Monolayer Molybdenum Diselenide. NANO LETTERS 2021; 21:7602-7608. [PMID: 34468150 DOI: 10.1021/acs.nanolett.1c02199] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional transition metal dichalcogenides are promising candidates for ultrathin light modulators due to their highly tunable excitonic resonances at visible and near-infrared wavelengths. At cryogenic temperatures, large excitonic reflectivity in monolayer molybdenum diselenide (MoSe2) has been shown, but the permittivity and index modulation have not been studied. Here, we demonstrate large gate-tunability of complex refractive index in monolayer MoSe2 by Fermi level modulation and study the doping dependence of the A and B excitonic resonances for temperatures between 4 and 150 K. By tuning the charge density, we observe both temperature- and carrier-dependent epsilon-near-zero response in the permittivity and transition from metallic to dielectric near the A exciton energy. We attribute the dynamic control of the refractive index to the interplay between radiative and non-radiative decay channels that are tuned upon gating. Our results suggest the potential of monolayer MoSe2 as an active material for emerging photonics applications.
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Affiliation(s)
- Melissa Li
- Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, California 91125, United States
| | - Souvik Biswas
- Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, California 91125, United States
| | - Claudio U Hail
- Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, California 91125, United States
| | - Harry A Atwater
- Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, California 91125, United States
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8
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Kim H, Uddin SZ, Lien DH, Yeh M, Azar NS, Balendhran S, Kim T, Gupta N, Rho Y, Grigoropoulos CP, Crozier KB, Javey A. Actively variable-spectrum optoelectronics with black phosphorus. Nature 2021; 596:232-237. [PMID: 34381234 DOI: 10.1038/s41586-021-03701-1] [Citation(s) in RCA: 63] [Impact Index Per Article: 21.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/22/2021] [Accepted: 06/07/2021] [Indexed: 11/09/2022]
Abstract
Room-temperature optoelectronic devices that operate at short-wavelength and mid-wavelength infrared ranges (one to eight micrometres) can be used for numerous applications1-5. To achieve the range of operating wavelengths needed for a given application, a combination of materials with different bandgaps (for example, superlattices or heterostructures)6,7 or variations in the composition of semiconductor alloys during growth8,9 are used. However, these materials are complex to fabricate, and the operating range is fixed after fabrication. Although wide-range, active and reversible tunability of the operating wavelengths in optoelectronic devices after fabrication is a highly desirable feature, no such platform has been yet developed. Here we demonstrate high-performance room-temperature infrared optoelectronics with actively variable spectra by presenting black phosphorus as an ideal candidate. Enabled by the highly strain-sensitive nature of its bandgap, which varies from 0.22 to 0.53 electronvolts, we show a continuous and reversible tuning of the operating wavelengths in light-emitting diodes and photodetectors composed of black phosphorus. Furthermore, we leverage this platform to demonstrate multiplexed nondispersive infrared gas sensing, whereby multiple gases (for example, carbon dioxide, methane and water vapour) are detected using a single light source. With its active spectral tunability while also retaining high performance, our work bridges a technological gap, presenting a potential way of meeting different requirements for emission and detection spectra in optoelectronic applications.
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Affiliation(s)
- Hyungjin Kim
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA.,Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Shiekh Zia Uddin
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA.,Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Der-Hsien Lien
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA.,Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Matthew Yeh
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA.,Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Nima Sefidmooye Azar
- Department of Electrical and Electronic Engineering, University of Melbourne, Melbourne, Victoria, Australia
| | | | - Taehun Kim
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA.,Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Niharika Gupta
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA.,Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Yoonsoo Rho
- Department of Mechanical Engineering, University of California, Berkeley, CA, USA
| | | | - Kenneth B Crozier
- Department of Electrical and Electronic Engineering, University of Melbourne, Melbourne, Victoria, Australia.,School of Physics, University of Melbourne, Melbourne, Victoria, Australia.,Australian Research Council (ARC) Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Melbourne, Melbourne, Victoria, Australia
| | - Ali Javey
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA. .,Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
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9
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Biswas S, Whitney WS, Grajower MY, Watanabe K, Taniguchi T, Bechtel HA, Rossman GR, Atwater HA. Tunable intraband optical conductivity and polarization-dependent epsilon-near-zero behavior in black phosphorus. SCIENCE ADVANCES 2021; 7:7/2/eabd4623. [PMID: 33523990 PMCID: PMC7793587 DOI: 10.1126/sciadv.abd4623] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/22/2020] [Accepted: 11/18/2020] [Indexed: 06/12/2023]
Abstract
Black phosphorus (BP) offers considerable promise for infrared and visible photonics. Efficient tuning of the bandgap and higher subbands in BP by modulation of the Fermi level or application of vertical electric fields has been previously demonstrated, allowing electrical control of its above-bandgap optical properties. Here, we report modulation of the optical conductivity below the bandgap (5 to 15 μm) by tuning the charge density in a two-dimensional electron gas induced in BP, thereby modifying its free carrier-dominated intraband response. With a moderate doping density of 7 × 1012 cm-2, we were able to observe a polarization-dependent epsilon-near-zero behavior in the dielectric permittivity of BP. The intraband polarization sensitivity is intimately linked to the difference in effective fermionic masses along the two crystallographic directions, as confirmed by our measurements. Our results suggest the potential of multilayer BP to allow new optical functions for emerging photonics applications.
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Affiliation(s)
- Souvik Biswas
- Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125, USA
| | - William S Whitney
- Department of Physics, California Institute of Technology, Pasadena, CA 91125, USA
| | - Meir Y Grajower
- Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125, USA
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials, Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Hans A Bechtel
- Advanced Light Source Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - George R Rossman
- Division of Geological and Planetary Sciences, California Institute of Technology, Pasadena, CA 91125, USA
| | - Harry A Atwater
- Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125, USA.
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10
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Song C, Noh G, Kim TS, Kang M, Song H, Ham A, Jo MK, Cho S, Chai HJ, Cho SR, Cho K, Park J, Song S, Song I, Bang S, Kwak JY, Kang K. Growth and Interlayer Engineering of 2D Layered Semiconductors for Future Electronics. ACS NANO 2020; 14:16266-16300. [PMID: 33301290 DOI: 10.1021/acsnano.0c06607] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Layered materials that do not form a covalent bond in a vertical direction can be prepared in a few atoms to one atom thickness without dangling bonds. This distinctive characteristic of limiting thickness around the sub-nanometer level allowed scientists to explore various physical phenomena in the quantum realm. In addition to the contribution to fundamental science, various applications were proposed. Representatively, they were suggested as a promising material for future electronics. This is because (i) the dangling-bond-free nature inhibits surface scattering, thus carrier mobility can be maintained at sub-nanometer range; (ii) the ultrathin nature allows the short-channel effect to be overcome. In order to establish fundamental discoveries and utilize them in practical applications, appropriate preparation methods are required. On the other hand, adjusting properties to fit the desired application properly is another critical issue. Hence, in this review, we first describe the preparation method of layered materials. Proper growth techniques for target applications and the growth of emerging materials at the beginning stage will be extensively discussed. In addition, we suggest interlayer engineering via intercalation as a method for the development of artificial crystal. Since infinite combinations of the host-intercalant combination are possible, it is expected to expand the material system from the current compound system. Finally, inevitable factors that layered materials must face to be used as electronic applications will be introduced with possible solutions. Emerging electronic devices realized by layered materials are also discussed.
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Affiliation(s)
- Chanwoo Song
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Gichang Noh
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
- Center for Electronic Materials, Korea Institute of Science and Technology (KIST), Seoul 02792, Korea
| | - Tae Soo Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Minsoo Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Hwayoung Song
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Ayoung Ham
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Min-Kyung Jo
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
- Operando Methodology and Measurement Team, Interdisciplinary Materials Measurement Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Korea
| | - Seorin Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Hyun-Jun Chai
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Seong Rae Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Kiwon Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Jeongwon Park
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Seungwoo Song
- Operando Methodology and Measurement Team, Interdisciplinary Materials Measurement Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Korea
| | - Intek Song
- Department of Applied Chemistry, Andong National University, Andong 36728, Korea
| | - Sunghwan Bang
- Materials & Production Engineering Research Institute, LG Electronics, Pyeongtaek-si 17709, Korea
| | - Joon Young Kwak
- Center for Electronic Materials, Korea Institute of Science and Technology (KIST), Seoul 02792, Korea
| | - Kibum Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
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11
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Dereshgi SA, Liu Z, Aydin K. Anisotropic localized surface plasmons in borophene. OPTICS EXPRESS 2020; 28:16725-16739. [PMID: 32549488 DOI: 10.1364/oe.392011] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/06/2020] [Accepted: 05/10/2020] [Indexed: 06/11/2023]
Abstract
We present a theoretical study on the plasmonic response of borophene, a monolayer 2D material that is predicted to exhibit metallic response and anisotropic plasmonic behavior in visible wavelengths. We investigate plasmonic properties of borophene thin films as well as borophene nanoribbons and nanopatches where polarization-sensitive absorption values in the order of 50% is obtained with monolayer borophene. It is demonstrated that by adding a metal layer, this absorption can be enhanced to 100%. We also examine giant dichroism in monolayer borophene which can be tuned passively (patterning) and actively (electrostatic gating) and our simulations yield 20% reflected light with significant polarization rotation. These findings reveal the potential of borophene in the manipulation of phase, amplitude and polarization of light at the extreme subwavelength scales.
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12
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Pan J, Zhu W, Zheng H, Yu J, Chen Y, Guan H, Lu H, Zhong Y, Luo Y, Chen Z. Exploiting black phosphorus based-Tamm plasmons in the terahertz region. OPTICS EXPRESS 2020; 28:13443-13454. [PMID: 32403819 DOI: 10.1364/oe.391709] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/28/2020] [Accepted: 04/12/2020] [Indexed: 06/11/2023]
Abstract
Polarization-sensitive Tamm plasmons are investigated in a multi-layer photonic configuration where a monolayer black phosphorus (BP) is coated on a Bragg mirror separated by a dielectric. Owing to the in-plane anisotropy of BP, the Tamm plasmon can be excited selectively by tuning the BP carrier density. Cross-polarization conversion occurs when the armchair direction of BP makes an angle with the incident plan, i.e., ϕ≠0 or 90°. The BP-based Tamm device can be used as an intensity modulator with a modulation depth up to ∼100% and an insertion loss smaller than -0.55 dB. By analyzing the polarization evolution carefully, a multichannel polarization division multiplexing scheme is proposed and discussed. These findings open a new avenue for exploiting versatile tunable THz devices based on the monolayer of BP.
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13
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Wang D, Shen A, Lv JP, Jin G. Unique Landau-level structure of monolayer black phosphorus under an exponentially decaying magnetic field. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:095301. [PMID: 31711054 DOI: 10.1088/1361-648x/ab561a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
We study the Landau-level spectrum of a monolayer black phosphorus under an exponentially decaying magnetic field along one spatial dimension. The results show that unlike the case in a constant magnetic field, the number of Landau levels in the inhomogeneous magnetic field is finite, and the Landau-level structure of the system is strongly dependent on the inhomogeneity of the magnetic field. In particular, the crossing of some Landau levels apparently occurs, and the accidental degeneracy points between the levels for the conduction and valence bands are highly anisotropic due to the anisotropic effective masses in monolayer black phosphorus. The above unique characteristics of the Landau-level structure in an exponentially decaying magnetic field could be directly confirmed by the magneto-absorption and transport measurements.
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Affiliation(s)
- Dali Wang
- Department of Physics, Anhui Normal University, Wuhu 241000, People's Republic of China. National Laboratory of Solid State Microstructures, Department of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
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14
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Ma W, Lu J, Wan B, Peng D, Xu Q, Hu G, Peng Y, Pan C, Wang ZL. Piezoelectricity in Multilayer Black Phosphorus for Piezotronics and Nanogenerators. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1905795. [PMID: 31930641 DOI: 10.1002/adma.201905795] [Citation(s) in RCA: 27] [Impact Index Per Article: 6.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/05/2019] [Revised: 11/27/2019] [Indexed: 05/23/2023]
Abstract
Recently, piezoelectric characteristics have been a research focus for 2D materials because of their broad potential applications. Black phosphorus (BP) is a monoelemental 2D material predicted to be piezoelectric because of its highly directional properties and non-centrosymmetric lattice structure. However, piezoelectricity is hardly reported in monoelemental materials owing to their lack of ionic polarization, but piezoelectric generation is consistent with the non-centrosymmetric structure of BP. Theoretical calculations of phosphorene have explained the origin of piezoelectric polarization among P atoms. However, the disappearance of piezoelectricity in multilayer 2D material generally arises from the opposite orientations of adjacent atomic layers, whereas this effect is limited in BP lattices due to their spring-shaped space structure. Here, the existence of in-plane piezoelectricity is experimentally reported for multilayer BP along the armchair direction. Current-voltage measurements demonstrate a piezotronic effect in this orientation, and cyclic compression and release of BP flakes show an intrinsic current output as large as 4 pA under a compressive strain of -0.72%. The discovery of piezoelectricity in multilayer BP can lead to further understanding of this mechanism in monoelemental materials.
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Affiliation(s)
- Wenda Ma
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Junfeng Lu
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 211106, P. R. China
| | - Bensong Wan
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Dengfeng Peng
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Qian Xu
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Guofeng Hu
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yiyao Peng
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Caofeng Pan
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
- Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning, Guangxi, 530004, P. R. China
| | - Zhong Lin Wang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA
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15
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Chen C, Lu X, Deng B, Chen X, Guo Q, Li C, Ma C, Yuan S, Sung E, Watanabe K, Taniguchi T, Yang L, Xia F. Widely tunable mid-infrared light emission in thin-film black phosphorus. SCIENCE ADVANCES 2020; 6:eaay6134. [PMID: 32110733 PMCID: PMC7021507 DOI: 10.1126/sciadv.aay6134] [Citation(s) in RCA: 26] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/03/2019] [Accepted: 11/25/2019] [Indexed: 05/20/2023]
Abstract
Thin-film black phosphorus (BP) is an attractive material for mid-infrared optoelectronic applications because of its layered nature and a moderate bandgap of around 300 meV. Previous photoconduction demonstrations show that a vertical electric field can effectively reduce the bandgap of thin-film BP, expanding the device operational wavelength range in mid-infrared. Here, we report the widely tunable mid-infrared light emission from a hexagonal boron nitride (hBN)/BP/hBN heterostructure device. With a moderate displacement field up to 0.48 V/nm, the photoluminescence (PL) peak from a ~20-layer BP flake is continuously tuned from 3.7 to 7.7 μm, spanning 4 μm in mid-infrared. The PL emission remains perfectly linear-polarized along the armchair direction regardless of the bias field. Moreover, together with theoretical analysis, we show that the radiative decay probably dominates over other nonradiative decay channels in the PL experiments. Our results reveal the great potential of thin-film BP in future widely tunable, mid-infrared light-emitting and lasing applications.
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Affiliation(s)
- Chen Chen
- Department of Electrical Engineering, Yale University, New Haven, CT 06511, USA
| | - Xiaobo Lu
- Department of Physics, Washington University in St. Louis, St. Louis, MO 63136, USA
| | - Bingchen Deng
- Department of Electrical Engineering, Yale University, New Haven, CT 06511, USA
| | - Xiaolong Chen
- Department of Electrical Engineering, Yale University, New Haven, CT 06511, USA
| | - Qiushi Guo
- Department of Electrical Engineering, Yale University, New Haven, CT 06511, USA
| | - Cheng Li
- Department of Electrical Engineering, Yale University, New Haven, CT 06511, USA
| | - Chao Ma
- Department of Electrical Engineering, Yale University, New Haven, CT 06511, USA
| | - Shaofan Yuan
- Department of Electrical Engineering, Yale University, New Haven, CT 06511, USA
| | - Eric Sung
- Department of Electrical Engineering, Yale University, New Haven, CT 06511, USA
| | - Kenji Watanabe
- National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Li Yang
- Department of Physics, Washington University in St. Louis, St. Louis, MO 63136, USA
| | - Fengnian Xia
- Department of Electrical Engineering, Yale University, New Haven, CT 06511, USA
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16
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Rhee D, Paci JT, Deng S, Lee WK, Schatz GC, Odom TW. Soft Skin Layers Enable Area-Specific, Multiscale Graphene Wrinkles with Switchable Orientations. ACS NANO 2020; 14:166-174. [PMID: 31675210 DOI: 10.1021/acsnano.9b06325] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
This paper reports a method to realize crack-free graphene wrinkles with variable spatial wavelengths and switchable orientations. Graphene supported on a thin fluoropolymer and prestrained elastomer substrate can exhibit conformal wrinkling after strain relief. The wrinkle orientation could be switched beyond the intrinsic fracture limit of graphene for hundreds of cycles of stretching and releasing without forming cracks. Mechanical modeling revealed that the fluoropolymer layer mediated the structural evolution of the graphene wrinkles without crack formation or delamination. Patterned fluoropolymer layers with different thicknesses produced wrinkles with controlled wavelengths and orientations while maintaining the mechanical integrity of graphene under high tensile strain.
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Affiliation(s)
| | - Jeffrey T Paci
- Department of Chemistry , University of Victoria , Victoria , British Columbia V8P 5C2 , Canada
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