1
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Zhang Y, Grünewald L, Cao X, Abdelbarey D, Zheng X, Rugeramigabo EP, Verbeeck J, Zopf M, Ding F. Unveiling the 3D Morphology of Epitaxial GaAs/AlGaAs Quantum Dots. NANO LETTERS 2024; 24:10106-10113. [PMID: 39053013 PMCID: PMC11342363 DOI: 10.1021/acs.nanolett.4c02182] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/08/2024] [Revised: 07/23/2024] [Accepted: 07/23/2024] [Indexed: 07/27/2024]
Abstract
Strain-free GaAs/AlGaAs semiconductor quantum dots (QDs) grown by droplet etching and nanohole infilling (DENI) are highly promising candidates for the on-demand generation of indistinguishable and entangled photon sources. The spectroscopic fingerprint and quantum optical properties of QDs are significantly influenced by their morphology. The effects of nanohole geometry and infilled material on the exciton binding energies and fine structure splitting are well-understood. However, a comprehensive understanding of GaAs/AlGaAs QD morphology remains elusive. To address this, we employ high-resolution scanning transmission electron microscopy (STEM) and reverse engineering through selective chemical etching and atomic force microscopy (AFM). Cross-sectional STEM of uncapped QDs reveals an inverted conical nanohole with Al-rich sidewalls and defect-free interfaces. Subsequent selective chemical etching and AFM measurements further reveal asymmetries in element distribution. This study enhances the understanding of DENI QD morphology and provides a fundamental three-dimensional structural model for simulating and optimizing their optoelectronic properties.
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Affiliation(s)
- Yiteng Zhang
- Institut
für Festkörperphysik, Leibniz
Universität Hannover, Appelstraße 2, 30167 Hannover, Germany
| | - Lukas Grünewald
- EMAT, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
| | - Xin Cao
- Institut
für Festkörperphysik, Leibniz
Universität Hannover, Appelstraße 2, 30167 Hannover, Germany
| | - Doaa Abdelbarey
- Institut
für Festkörperphysik, Leibniz
Universität Hannover, Appelstraße 2, 30167 Hannover, Germany
| | - Xian Zheng
- Institut
für Festkörperphysik, Leibniz
Universität Hannover, Appelstraße 2, 30167 Hannover, Germany
| | | | - Johan Verbeeck
- EMAT, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
| | - Michael Zopf
- Institut
für Festkörperphysik, Leibniz
Universität Hannover, Appelstraße 2, 30167 Hannover, Germany
- Laboratorium
für Nano- und Quantenengineering, Leibniz Universität Hannover, Schneiderberg 39, 30167 Hannover, Germany
| | - Fei Ding
- Institut
für Festkörperphysik, Leibniz
Universität Hannover, Appelstraße 2, 30167 Hannover, Germany
- Laboratorium
für Nano- und Quantenengineering, Leibniz Universität Hannover, Schneiderberg 39, 30167 Hannover, Germany
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2
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Larocque H, Buyukkaya MA, Errando-Herranz C, Papon C, Harper S, Tao M, Carolan J, Lee CM, Richardson CJK, Leake GL, Coleman DJ, Fanto ML, Waks E, Englund D. Tunable quantum emitters on large-scale foundry silicon photonics. Nat Commun 2024; 15:5781. [PMID: 38987545 PMCID: PMC11237125 DOI: 10.1038/s41467-024-50208-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/05/2024] [Accepted: 07/02/2024] [Indexed: 07/12/2024] Open
Abstract
Controlling large-scale many-body quantum systems at the level of single photons and single atomic systems is a central goal in quantum information science and technology. Intensive research and development has propelled foundry-based silicon-on-insulator photonic integrated circuits to a leading platform for large-scale optical control with individual mode programmability. However, integrating atomic quantum systems with single-emitter tunability remains an open challenge. Here, we overcome this barrier through the hybrid integration of multiple InAs/InP microchiplets containing high-brightness infrared semiconductor quantum dot single photon emitters into advanced silicon-on-insulator photonic integrated circuits fabricated in a 300 mm foundry process. With this platform, we achieve single-photon emission via resonance fluorescence and scalable emission wavelength tunability. The combined control of photonic and quantum systems opens the door to programmable quantum information processors manufactured in leading semiconductor foundries.
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Affiliation(s)
- Hugo Larocque
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
| | - Mustafa Atabey Buyukkaya
- Department of Electrical and Computer Engineering and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD, 20742, USA
| | - Carlos Errando-Herranz
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
- Institute of Physics, University of Münster, 48149, Münster, Germany
| | - Camille Papon
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Samuel Harper
- Department of Electrical and Computer Engineering and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD, 20742, USA
| | - Max Tao
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Jacques Carolan
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
- Wolfson Institute for Biomedical Research, University College London, London, UK
| | - Chang-Min Lee
- Department of Electrical and Computer Engineering and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD, 20742, USA
| | | | - Gerald L Leake
- State University of New York Polytechnic Institute, Albany, NY, 12203, USA
| | - Daniel J Coleman
- State University of New York Polytechnic Institute, Albany, NY, 12203, USA
| | - Michael L Fanto
- Air Force Research Laboratory, Information Directorate, Rome, NY, 13441, USA
| | - Edo Waks
- Department of Electrical and Computer Engineering and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, MD, 20742, USA
| | - Dirk Englund
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
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3
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Hornung F, Pfister U, Bauer S, Cyrlyson's DR, Wang D, Vijayan P, Garcia AJ, Covre da Silva SF, Jetter M, Portalupi SL, Rastelli A, Michler P. Highly Indistinguishable Single Photons from Droplet-Etched GaAs Quantum Dots Integrated in Single-Mode Waveguides and Beamsplitters. NANO LETTERS 2024; 24:1184-1190. [PMID: 38230641 DOI: 10.1021/acs.nanolett.3c04010] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/18/2024]
Abstract
Integration of on-demand quantum emitters into photonic integrated circuits (PICs) has drawn much attention in recent years, as it promises a scalable implementation of quantum information schemes. A central property for several applications is the indistinguishability of the emitted photons. In this regard, GaAs quantum dots (QDs) obtained by droplet etching epitaxy show excellent performances, making the realization of these QDs into PICs highly appealing. Here, we show the first implementation in this direction, realizing the key passive elements needed in PICs, i.e., single-mode waveguides (WGs) with integrated GaAs-QDs and beamsplitters. We study the statistical distribution of wavelength, linewidth, and decay time of the excitonic line, as well as the quantum optical properties of individual emitters under resonant excitation. We achieve single-photon purities as high as 1 - g(2)(0) = 0.929 ± 0.009 and two-photon interference visibilities of up to VTPI = 0.953 ± 0.032 for consecutively emitted photons.
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Affiliation(s)
- Florian Hornung
- Institut für Halbleiteroptik und Funktionelle Grenzflächen, Center for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart, Germany
| | - Ulrich Pfister
- Institut für Halbleiteroptik und Funktionelle Grenzflächen, Center for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart, Germany
| | - Stephanie Bauer
- Institut für Halbleiteroptik und Funktionelle Grenzflächen, Center for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart, Germany
| | - Dee Rocking Cyrlyson's
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, 4040 Linz, Austria
| | - Dongze Wang
- Institut für Halbleiteroptik und Funktionelle Grenzflächen, Center for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart, Germany
| | - Ponraj Vijayan
- Institut für Halbleiteroptik und Funktionelle Grenzflächen, Center for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart, Germany
| | - Ailton J Garcia
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, 4040 Linz, Austria
| | | | - Michael Jetter
- Institut für Halbleiteroptik und Funktionelle Grenzflächen, Center for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart, Germany
| | - Simone L Portalupi
- Institut für Halbleiteroptik und Funktionelle Grenzflächen, Center for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart, Germany
| | - Armando Rastelli
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, 4040 Linz, Austria
| | - Peter Michler
- Institut für Halbleiteroptik und Funktionelle Grenzflächen, Center for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart, Germany
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4
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Descamps T, Schetelat T, Gao J, Poole PJ, Dalacu D, Elshaari AW, Zwiller V. Dynamic Strain Modulation of a Nanowire Quantum Dot Compatible with a Thin-Film Lithium Niobate Photonic Platform. ACS PHOTONICS 2023; 10:3691-3699. [PMID: 37869556 PMCID: PMC10588554 DOI: 10.1021/acsphotonics.3c00821] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/14/2023] [Indexed: 10/24/2023]
Abstract
The integration of indistinguishable single photon sources in photonic circuits is a major prerequisite for on-chip quantum applications. Among the various high-quality sources, nanowire quantum dots can be efficiently coupled to optical waveguides because of their preferred emission direction along their growth direction. However, local tuning of the emission properties remains challenging. In this work, we transfer a nanowire quantum dot onto a bulk lithium niobate substrate and show that its emission can be dynamically tuned by acousto-optical coupling with surface acoustic waves. The purity of the single photon source is preserved during the strain modulation. We further demonstrate that the transduction is maintained even with a SiO2 encapsulation layer deposited on top of the nanowire acting as the cladding of a photonic circuit. Based on these experimental findings and numerical simulations, we introduce a device architecture consisting of a nanowire quantum dot efficiently coupled to a thin-film lithium niobate rib waveguide and strain-tunable by surface acoustic waves.
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Affiliation(s)
- Thomas Descamps
- Department
of Applied Physics, KTH Royal Institute
of Technology, Roslagstullsbacken
21, 10691 Stockholm, Sweden
| | - Tanguy Schetelat
- Department
of Applied Physics, KTH Royal Institute
of Technology, Roslagstullsbacken
21, 10691 Stockholm, Sweden
| | - Jun Gao
- Department
of Applied Physics, KTH Royal Institute
of Technology, Roslagstullsbacken
21, 10691 Stockholm, Sweden
| | - Philip J. Poole
- National
Research Council of Canada, Ottawa, Ontario K1A 0R6, Canada
| | - Dan Dalacu
- National
Research Council of Canada, Ottawa, Ontario K1A 0R6, Canada
| | - Ali W. Elshaari
- Department
of Applied Physics, KTH Royal Institute
of Technology, Roslagstullsbacken
21, 10691 Stockholm, Sweden
| | - Val Zwiller
- Department
of Applied Physics, KTH Royal Institute
of Technology, Roslagstullsbacken
21, 10691 Stockholm, Sweden
- Single
Quantum BV, Rotterdamseweg
394, 2629HH Delft, The Netherlands
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5
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Gao J, Santos L, Krishna G, Xu ZS, Iovan A, Steinhauer S, Gühne O, Poole PJ, Dalacu D, Zwiller V, Elshaari AW. Scalable Generation and Detection of on-Demand W States in Nanophotonic Circuits. NANO LETTERS 2023. [PMID: 37224010 DOI: 10.1021/acs.nanolett.3c01551] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
Quantum physics phenomena, entanglement and coherence, are crucial for quantum information protocols, but understanding these in systems with more than two parts is challenging due to increasing complexity. The W state, a multipartite entangled state, is notable for its robustness and benefits in quantum communication. Here, we generate eight-mode on-demand single-photon W states, using nanowire quantum dots and a silicon nitride photonic chip. We demonstrate a reliable and scalable technique for reconstructing the W state in photonic circuits using Fourier and real-space imaging, supported by the Gerchberg-Saxton phase retrieval algorithm. Additionally, we utilize an entanglement witness to distinguish between mixed and entangled states, thereby affirming the entangled nature of our generated state. The study provides a new imaging approach of assessing multipartite entanglement in W states, paving the way for further progress in image processing and Fourier-space analysis techniques for complex quantum systems.
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Affiliation(s)
- Jun Gao
- Department of Applied Physics, KTH Royal Institute of Technology, Albanova University Centre, Roslagstullsbacken 21, 106 91 Stockholm, Sweden
| | - Leonardo Santos
- Naturwissenschaftlich-Technische Fakultät, Universität Siegen, Walter-Flex-Straße 3, D-57068 Siegen, Germany
| | - Govind Krishna
- Department of Applied Physics, KTH Royal Institute of Technology, Albanova University Centre, Roslagstullsbacken 21, 106 91 Stockholm, Sweden
| | - Ze-Sheng Xu
- Department of Applied Physics, KTH Royal Institute of Technology, Albanova University Centre, Roslagstullsbacken 21, 106 91 Stockholm, Sweden
| | - Adrian Iovan
- Department of Applied Physics, KTH Royal Institute of Technology, Albanova University Centre, Roslagstullsbacken 21, 106 91 Stockholm, Sweden
| | - Stephan Steinhauer
- Department of Applied Physics, KTH Royal Institute of Technology, Albanova University Centre, Roslagstullsbacken 21, 106 91 Stockholm, Sweden
| | - Otfried Gühne
- Naturwissenschaftlich-Technische Fakultät, Universität Siegen, Walter-Flex-Straße 3, D-57068 Siegen, Germany
| | - Philip J Poole
- National Research Council of Canada, Ottawa, Ontario K1A 0R6, Canada
| | - Dan Dalacu
- National Research Council of Canada, Ottawa, Ontario K1A 0R6, Canada
| | - Val Zwiller
- Department of Applied Physics, KTH Royal Institute of Technology, Albanova University Centre, Roslagstullsbacken 21, 106 91 Stockholm, Sweden
| | - Ali W Elshaari
- Department of Applied Physics, KTH Royal Institute of Technology, Albanova University Centre, Roslagstullsbacken 21, 106 91 Stockholm, Sweden
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6
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Finazzer M, Tanos R, Curé Y, Artioli A, Kotal S, Bleuse J, Genuist Y, Gérard JM, Donatini F, Claudon J. On-Chip Electrostatic Actuation of a Photonic Wire Antenna Embedding Quantum Dots. NANO LETTERS 2023; 23:2203-2209. [PMID: 36888899 DOI: 10.1021/acs.nanolett.2c04813] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
A photonic wire antenna embedding individual quantum dots (QDs) constitutes a promising platform for both quantum photonics and hybrid nanomechanics. We demonstrate here an integrated device in which on-chip electrodes can apply a static or oscillating bending force to the upper part of the wire. In the static regime, we achieve control over the bending direction and apply at will tensile or compressive mechanical stress on any QD. This results in a blue shift or red shift of their emission, with direct application to the realization of broadly tunable sources of quantum light. As a first illustration of operation in the dynamic regime, we excite the wire fundamental flexural mode and use the QD emission to detect the mechanical vibration. With an estimated operation bandwidth in the GHz range, electrostatic actuation opens appealing perspectives for the exploration of QD-nanowire hybrid mechanics with high-frequency vibrational modes.
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Affiliation(s)
- Matteo Finazzer
- Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, "Nanophysique et Semiconducteurs" Group, F-38000 Grenoble, France
| | - Rana Tanos
- Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, "Nanophysique et Semiconducteurs" Group, F-38000 Grenoble, France
| | - Yoann Curé
- Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, "Nanophysique et Semiconducteurs" Group, F-38000 Grenoble, France
| | - Alberto Artioli
- Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, "Nanophysique et Semiconducteurs" Group, F-38000 Grenoble, France
| | - Saptarshi Kotal
- Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, "Nanophysique et Semiconducteurs" Group, F-38000 Grenoble, France
| | - Joël Bleuse
- Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, "Nanophysique et Semiconducteurs" Group, F-38000 Grenoble, France
| | - Yann Genuist
- Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, "Nanophysique et Semiconducteurs" Group, F-38000 Grenoble, France
| | - Jean-Michel Gérard
- Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, "Nanophysique et Semiconducteurs" Group, F-38000 Grenoble, France
| | - Fabrice Donatini
- Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, "Nanophysique et Semiconducteurs" Group, F-38000 Grenoble, France
| | - Julien Claudon
- Univ. Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, "Nanophysique et Semiconducteurs" Group, F-38000 Grenoble, France
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7
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Simone G. Trends of Biosensing: Plasmonics through Miniaturization and Quantum Sensing. Crit Rev Anal Chem 2023:1-26. [PMID: 36601882 DOI: 10.1080/10408347.2022.2161813] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/06/2023]
Abstract
Despite being extremely old concepts, plasmonics and surface plasmon resonance-based biosensors have been increasingly popular in the recent two decades due to the growing interest in nanooptics and are now of relevant significance in regards to applications associated with human health. Plasmonics integration into point-of-care devices for health surveillance has enabled significant levels of sensitivity and limit of detection to be achieved and has encouraged the expansion of the fields of study and market niches devoted to the creation of quick and incredibly sensitive label-free detection. The trend reflects in wearable plasmonic sensor development as well as point-of-care applications for widespread applications, demonstrating the potential impact of the new generation of plasmonic biosensors on human well-being through the concepts of personalized medicine and global health. In this context, the aim here is to discuss the potential, limitations, and opportunities for improvement that have arisen as a result of the integration of plasmonics into microsystems and lab-on-chip over the past five years. Recent applications of plasmonic biosensors in microsystems and sensor performance are analyzed. The final analysis focuses on the integration of microfluidics and lab-on-a-chip with quantum plasmonics technology prospecting it as a promising solution for chemical and biological sensing. Here it is underlined how the research in the field of quantum plasmonic sensing for biological applications has flourished over the past decade with the aim to overcome the limits given by quantum fluctuations and noise. The significant advances in nanophotonics, plasmonics and microsystems used to create increasingly effective biosensors would continue to benefit this field if harnessed properly.
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Affiliation(s)
- Giuseppina Simone
- Chemical Engineering, University of Naples 'Federico II', Naples, Italy
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8
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Laorenza DW, Freedman DE. Could the Quantum Internet Be Comprised of Molecular Spins with Tunable Optical Interfaces? J Am Chem Soc 2022; 144:21810-21825. [DOI: 10.1021/jacs.2c07775] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/22/2022]
Affiliation(s)
- Daniel W. Laorenza
- Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts02139, United States
| | - Danna E. Freedman
- Department of Chemistry, Massachusetts Institute of Technology, Cambridge, Massachusetts02139, United States
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9
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Wu X, Wang R, Zou H, Song B, Wen S, Frauenheim T, Yam C. First-Principles Nonequilibrium Green's Function Approach to Energy Conversion in Nanoscale Optoelectronics. J Chem Theory Comput 2022; 18:5502-5512. [PMID: 36005397 DOI: 10.1021/acs.jctc.2c00547] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
Understanding photon-electron conversion on the nanoscale is essential for future innovations in nano-optoelectronics. In this article, based on nonequilibrium Green's function (NEGF) formalism, we develop a quantum-mechanical method for modeling energy conversion in nanoscale optoelectronic devices. The method allows us to study photoinduced charge transport and electroluminescence processes in realistic devices. First, we investigate the electroluminescence properties of a two-level model with two different treatments of inelastic scatterings. We show the regime where self-consistency between electron and photon is important for correct description of the inelastic scatterings. The method is then applied to model single-molecule junctions based on the density-functional tight-binding approach. The predicted emission spectra are found to be in very good agreement with experimental measurements. For nanostructured materials, the method is further applied to study the photoresponse of a two-dimensional graphene/graphite-C3N4 heterojunction photovoltaic device. The simulations demonstrate clearly the impact of atomistic details on the optoelectronic properties of nanodevices. This work provides a practical theoretical framework that can be applied to model and design realistic nanodevices.
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Affiliation(s)
- Xiaoyan Wu
- Shenzhen JL Computational Science and Applied Research Institute, Longhua District, Shenzhen 518110, China
| | - Rulin Wang
- College of Physics, Qingdao University, Qingdao 266071, China
| | - Hao Zou
- Beijing Computational Science Research Center, Beijing 100193, China
| | - Bowen Song
- Beijing Computational Science Research Center, Beijing 100193, China
| | - Shizheng Wen
- Jiangsu Province Key Laboratory of Modern Measurement Technology and Intelligent Systems, School of Physics and Electrical Engineering, Huaiyin Normal University, Huaian 223300, China
| | - Thomas Frauenheim
- Shenzhen JL Computational Science and Applied Research Institute, Longhua District, Shenzhen 518110, China
| | - ChiYung Yam
- Shenzhen Institute for Advanced Study, University of Electronic Science and Technology of China, Shenzhen 518000, China.,Hong Kong Quantum AI Lab Limited, Unit 909-915 of 17W Building, Science Park, NT, Hong Kong, China
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10
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Jin T, Li X, Liu R, Ou W, Zhu Y, Wang X, Liu J, Huo Y, Ou X, Zhang J. Generation of Polarization-Entangled Photons from Self-Assembled Quantum Dots in a Hybrid Quantum Photonic Chip. NANO LETTERS 2022; 22:586-593. [PMID: 35025517 DOI: 10.1021/acs.nanolett.1c03226] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Integration of entangled photon sources in a quantum photonic chip has enabled the most envisioned quantum photonic technologies to be performed in a compact platform with enhanced complexity and stability as compared to bulk optics. However, the technology to generate entangled photon states in a quantum photonic chip that are neither probabilistic nor restricted to low efficiency is still missing. Here, we introduce a hybrid quantum photonic chip where waveguide-coupled self-assembled quantum dots (QDs) are heterogeneously integrated onto a piezoelectric actuator. By exerting an anisotropic stress, we experimentally show that the fine structure splitting of waveguide-coupled quantum dots can be effectively eliminated. This allows for the demonstration of chip-integrated self-assembled QDs for generating and routing polarization-entangled photon pairs. Our results presented here would open up an avenue for implementing on-demand quantum information processing in a quantum photonic chip by employing all-solid-state self-assembled quantum dot emitters.
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Affiliation(s)
- Tingting Jin
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200092, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xueshi Li
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, China
| | - Runze Liu
- Shanghai Research Center for Quantum Sciences, Shanghai 201315, China
- Shanghai Branch, CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Shanghai 201315, China
| | - Weiwen Ou
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200092, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yifan Zhu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200092, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xudong Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200092, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jin Liu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, China
| | - Yongheng Huo
- Shanghai Research Center for Quantum Sciences, Shanghai 201315, China
- Shanghai Branch, CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Shanghai 201315, China
- Hefei National Laboratory for Physical Sciences at Microscale and Department of Engineering and Applied Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Xin Ou
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200092, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jiaxiang Zhang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200092, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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11
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Uppu R, Midolo L, Zhou X, Carolan J, Lodahl P. Quantum-dot-based deterministic photon-emitter interfaces for scalable photonic quantum technology. NATURE NANOTECHNOLOGY 2021; 16:1308-1317. [PMID: 34663948 DOI: 10.1038/s41565-021-00965-6] [Citation(s) in RCA: 25] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/01/2021] [Accepted: 07/21/2021] [Indexed: 05/26/2023]
Abstract
The scale-up of quantum hardware is fundamental to realize the full potential of quantum technology. Among a plethora of hardware platforms, photonics stands out: it provides a modular approach where the main challenges lie in the construction of high-quality building blocks and in the development of methods to interface the modules. The subsequent scale-up could exploit mature integrated photonics foundry technology to produce small-footprint quantum processors of immense complexity. Solid-state quantum emitters can realize a deterministic photon-emitter interface and enable key quantum photonic resources and functionalities, including on-demand single- and multi-photon-entanglement sources, as well as photon-photon nonlinear quantum gates. In this Review, we use the example of quantum dot devices to present the physics of deterministic photon-emitter interfaces, including the main photonic building blocks required to scale up, and discuss quantitative performance benchmarks. While our focus is on quantum dot devices, the presented methods also apply to other quantum-emitter platforms such as atoms, vacancy centres, molecules and superconducting qubits. We also identify applications within quantum communication and computing, presenting a route towards photonics with a genuine quantum advantage.
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Affiliation(s)
- Ravitej Uppu
- Center for Hybrid Quantum Networks (Hy-Q), Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
- Department of Physics & Astronomy, University of Iowa, Iowa City, IA, USA
| | - Leonardo Midolo
- Center for Hybrid Quantum Networks (Hy-Q), Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
| | - Xiaoyan Zhou
- Center for Hybrid Quantum Networks (Hy-Q), Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
| | - Jacques Carolan
- Center for Hybrid Quantum Networks (Hy-Q), Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
| | - Peter Lodahl
- Center for Hybrid Quantum Networks (Hy-Q), Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark.
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12
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Katsumi R, Ota Y, Tajiri T, Kakuda M, Iwamoto S, Akiyama H, Arakawa Y. Unidirectional output from a quantum-dot single-photon source hybrid integrated on silicon. OPTICS EXPRESS 2021; 29:37117-37127. [PMID: 34808790 DOI: 10.1364/oe.440218] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/11/2021] [Accepted: 10/12/2021] [Indexed: 06/13/2023]
Abstract
We report a quantum-dot single-photon source (QD SPS) hybrid integrated on a silicon waveguide embedding a photonic crystal mirror, which reflects photons and enables efficient unidirectional output from the waveguide. The silicon waveguide is constituted of a subwavelength grating so as to maintain the high efficiency even under the presence of stacking misalignment accompanied by hybrid integration processes. Experimentally, we assembled the hybrid photonic structure by transfer printing and demonstrated single-photon generation from a QD and its unidirectional output from the waveguide. These results point out a promising approach toward scalable integration of SPSs on silicon quantum photonics platforms.
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13
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Magno G, Grande M, D'Orazio A. Multifunctional and reconfigurable graphene/liquid crystal-assisted asymmetrical Fabry-Pérot cavity for reflected light control. OPTICS EXPRESS 2021; 29:27816-27829. [PMID: 34615190 DOI: 10.1364/oe.432166] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/21/2021] [Accepted: 07/04/2021] [Indexed: 06/13/2023]
Abstract
Multifunctional and reconfigurable devices are crucial for compact and smart optoelectronic devices. In this paper, we propose a multifunctional and spectrally reconfigurable asymmetric 1D PhC Fabry-Pérot cavity filled with nematic liquid crystal and bounded by two graphene monolayers. Due to the large number of available degrees of freedom, such a structure can behave as either a notch filter, an absorber, an amplitude modulator, or a phase shifter for the reflected electromagnetic waves. The chemical potential of one or both graphene monolayers can be exploited to modulate the amplitude and phase-shift angle of the reflected electromagnetic waves. Furthermore, all functions are narrowband (1 nm linewidth) and are spectrally tunable over a range of about 200 nm around the working wavelength of 1550 nm by controlling the orientation of the elongated molecules of the liquid crystal. This structure may be advantageously exploited for the realization of optical modulators and beamsteering systems.
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14
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Biesold GM, Liang S, Brettmann B, Thadhani N, Kang Z, Lin Z. Tailoring Optical Properties of Luminescent Semiconducting Nanocrystals through Hydrostatic, Anisotropic Static, and Dynamic Pressures. Angew Chem Int Ed Engl 2021. [DOI: 10.1002/ange.202008395] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- Gill M. Biesold
- School of Materials Science and Engineering Georgia Institute of Technology Atlanta Georgia 30332 USA
| | - Shuang Liang
- School of Materials Science and Engineering Georgia Institute of Technology Atlanta Georgia 30332 USA
| | - Blair Brettmann
- School of Materials Science and Engineering Georgia Institute of Technology Atlanta Georgia 30332 USA
- School of Chemical and Biomedical Engineering Georgia Institute of Technology Atlanta Georgia 30332 USA
| | - Naresh Thadhani
- School of Materials Science and Engineering Georgia Institute of Technology Atlanta Georgia 30332 USA
| | - Zhitao Kang
- School of Materials Science and Engineering Georgia Institute of Technology Atlanta Georgia 30332 USA
- Georgia Tech Research Institute Georgia Institute of Technology Atlanta Georgia 30332 USA
| | - Zhiqun Lin
- School of Materials Science and Engineering Georgia Institute of Technology Atlanta Georgia 30332 USA
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15
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Gyger S, Zichi J, Schweickert L, Elshaari AW, Steinhauer S, Covre da Silva SF, Rastelli A, Zwiller V, Jöns KD, Errando-Herranz C. Reconfigurable photonics with on-chip single-photon detectors. Nat Commun 2021; 12:1408. [PMID: 33658495 PMCID: PMC7930283 DOI: 10.1038/s41467-021-21624-3] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/15/2020] [Accepted: 02/04/2021] [Indexed: 11/14/2022] Open
Abstract
Integrated quantum photonics offers a promising path to scale up quantum optics experiments by miniaturizing and stabilizing complex laboratory setups. Central elements of quantum integrated photonics are quantum emitters, memories, detectors, and reconfigurable photonic circuits. In particular, integrated detectors not only offer optical readout but, when interfaced with reconfigurable circuits, allow feedback and adaptive control, crucial for deterministic quantum teleportation, training of neural networks, and stabilization of complex circuits. However, the heat generated by thermally reconfigurable photonics is incompatible with heat-sensitive superconducting single-photon detectors, and thus their on-chip co-integration remains elusive. Here we show low-power microelectromechanical reconfiguration of integrated photonic circuits interfaced with superconducting single-photon detectors on the same chip. We demonstrate three key functionalities for photonic quantum technologies: 28 dB high-extinction routing of classical and quantum light, 90 dB high-dynamic range single-photon detection, and stabilization of optical excitation over 12 dB power variation. Our platform enables heat-load free reconfigurable linear optics and adaptive control, critical for quantum state preparation and quantum logic in large-scale quantum photonics applications.
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Affiliation(s)
- Samuel Gyger
- Department of Applied Physics, KTH Royal Institute of Technology, Stockholm, Sweden.
| | - Julien Zichi
- Department of Applied Physics, KTH Royal Institute of Technology, Stockholm, Sweden
| | - Lucas Schweickert
- Department of Applied Physics, KTH Royal Institute of Technology, Stockholm, Sweden
| | - Ali W Elshaari
- Department of Applied Physics, KTH Royal Institute of Technology, Stockholm, Sweden
| | - Stephan Steinhauer
- Department of Applied Physics, KTH Royal Institute of Technology, Stockholm, Sweden
| | - Saimon F Covre da Silva
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Linz, Austria
| | - Armando Rastelli
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Linz, Austria
| | - Val Zwiller
- Department of Applied Physics, KTH Royal Institute of Technology, Stockholm, Sweden
| | - Klaus D Jöns
- Department of Applied Physics, KTH Royal Institute of Technology, Stockholm, Sweden
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16
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Biesold GM, Liang S, Brettmann B, Thadhani N, Kang Z, Lin Z. Tailoring Optical Properties of Luminescent Semiconducting Nanocrystals through Hydrostatic, Anisotropic Static, and Dynamic Pressures. Angew Chem Int Ed Engl 2021; 60:9772-9788. [PMID: 32621404 DOI: 10.1002/anie.202008395] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/13/2020] [Indexed: 12/25/2022]
Abstract
Luminescent semiconductor nanocrystals are a fascinating class of materials because of their size-dependent emissions. Numerous past studies have demonstrated that semiconductor nanoparticles with radii smaller than their Bohr radius experience quantum confinement and thus size-dependent emissions. Exerting pressure on these nanoparticles represents an additional, more dynamic, strategy to alter their size and shift their emission. The application of pressure results in the lattices becoming strained and the electronic structure altered. In this Minireview, colloidal semiconductor nanocrystals are first introduced. The effects of uniform hydrostatic pressure on the optical properties of metal halide perovskite (ABX3 ), II-VI, III-V, and IV-VI semiconductor nanocrystals are then examined. The optical properties of semiconductor nanocrystals under static and dynamic anisotropic pressure are then summarized. Finally, future research directions and applications utilizing the pressure-dependent optical properties of semiconductor nanocrystals are discussed.
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Affiliation(s)
- Gill M Biesold
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia, 30332, USA
| | - Shuang Liang
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia, 30332, USA
| | - Blair Brettmann
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia, 30332, USA.,School of Chemical and Biomedical Engineering, Georgia Institute of Technology, Atlanta, Georgia, 30332, USA
| | - Naresh Thadhani
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia, 30332, USA
| | - Zhitao Kang
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia, 30332, USA.,Georgia Tech Research Institute, Georgia Institute of Technology, Atlanta, Georgia, 30332, USA
| | - Zhiqun Lin
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia, 30332, USA
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17
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Dusanowski Ł, Köck D, Shin E, Kwon SH, Schneider C, Höfling S. Purcell-Enhanced and Indistinguishable Single-Photon Generation from Quantum Dots Coupled to On-Chip Integrated Ring Resonators. NANO LETTERS 2020; 20:6357-6363. [PMID: 32706592 DOI: 10.1021/acs.nanolett.0c01771] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Integrated photonic circuits provide a versatile toolbox of functionalities for advanced quantum optics applications. Here, we demonstrate an essential component of such a system in the form of a Purcell-enhanced single-photon source based on a quantum dot coupled to a robust on-chip integrated resonator. For that, we develop GaAs monolithic ring cavities based on distributed Bragg reflector ridge waveguides. Under resonant excitation conditions, we observe an over 2-fold spontaneous emission rate enhancement using Purcell effect and gain a full coherent optical control of a QD-two-level system via Rabi oscillations. Furthermore, we demonstrate an on-demand single-photon generation with strongly suppressed multiphoton emission probability as low as 1% and two-photon interference with visibility up to 95%. This integrated single-photon source can be readily scaled up, promising a realistic pathway for scalable on-chip linear optical quantum simulation, quantum computation, and quantum networks.
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Affiliation(s)
- Łukasz Dusanowski
- Technische Physik and Würzburg-Dresden Cluster of Excellence ct.qmat, Physikalisches Institut and Wilhelm-Conrad-Röntgen-Research Center for Complex Material Systems, University of Würzburg, Am Hubland, D-97074 Würzburg, Germany
| | - Dominik Köck
- Technische Physik and Würzburg-Dresden Cluster of Excellence ct.qmat, Physikalisches Institut and Wilhelm-Conrad-Röntgen-Research Center for Complex Material Systems, University of Würzburg, Am Hubland, D-97074 Würzburg, Germany
| | - Eunso Shin
- Department of Physics, Chung-Ang University, 156-756 Seoul, Korea
| | - Soon-Hong Kwon
- Department of Physics, Chung-Ang University, 156-756 Seoul, Korea
| | - Christian Schneider
- Technische Physik and Würzburg-Dresden Cluster of Excellence ct.qmat, Physikalisches Institut and Wilhelm-Conrad-Röntgen-Research Center for Complex Material Systems, University of Würzburg, Am Hubland, D-97074 Würzburg, Germany
- Institute of Physics, University of Oldenburg, D-26129 Oldenburg, Germany
| | - Sven Höfling
- Technische Physik and Würzburg-Dresden Cluster of Excellence ct.qmat, Physikalisches Institut and Wilhelm-Conrad-Röntgen-Research Center for Complex Material Systems, University of Würzburg, Am Hubland, D-97074 Würzburg, Germany
- SUPA, School of Physics and Astronomy, University of St. Andrews, KY16 9SS St Andrews, United Kingdom
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18
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Mendelson N, Doherty M, Toth M, Aharonovich I, Tran TT. Strain-Induced Modification of the Optical Characteristics of Quantum Emitters in Hexagonal Boron Nitride. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1908316. [PMID: 32270896 DOI: 10.1002/adma.201908316] [Citation(s) in RCA: 38] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/18/2019] [Revised: 02/23/2020] [Accepted: 03/11/2020] [Indexed: 06/11/2023]
Abstract
Quantum emitters in hexagonal boron nitride (hBN) are promising building blocks for the realization of integrated quantum photonic systems. However, their spectral inhomogeneity currently limits their potential applications. Here, tensile strain is applied to quantum emitters embedded in few-layer hBN films and both red and blue spectral shifts are realized with tuning magnitudes up to 65 meV, a record for any 2D quantum source. Reversible tuning of the emission and related photophysical properties is demonstrated. Rotation of the optical dipole in response to strain is also observed, suggesting the presence of a second excited state. A theoretical model is derived to describe strain-based tuning in hBN, and the rotation of the optical dipole. The study demonstrates the immense potential for strain tuning of quantum emitters in layered materials to enable their employment in scalable quantum photonic networks.
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Affiliation(s)
- Noah Mendelson
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
| | - Marcus Doherty
- Laser Physics Centre, Research School of Physics, Australian National University, Canberra, ACT, 2601, Australia
| | - Milos Toth
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales, 2007, Australia
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Faculty of Science, University of Technology Sydney, Ultimo, New South Wales, 2007, Australia
| | - Toan Trong Tran
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
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19
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Zhao TM, Chen Y, Yu Y, Li Q, Davanco M, Liu J. Advanced technologies for quantum photonic devices based on epitaxial quantum dots. ADVANCED QUANTUM TECHNOLOGIES 2020; 3:10.1002/qute.201900034. [PMID: 36452403 PMCID: PMC9706462 DOI: 10.1002/qute.201900034] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2019] [Indexed: 05/12/2023]
Abstract
Quantum photonic devices are candidates for realizing practical quantum computers and networks. The development of integrated quantum photonic devices can greatly benefit from the ability to incorporate different types of materials with complementary, superior optical or electrical properties on a single chip. Semiconductor quantum dots (QDs) serve as a core element in the emerging modern photonic quantum technologies by allowing on-demand generation of single-photons and entangled photon pairs. During each excitation cycle, there is one and only one emitted photon or photon pair. QD photonic devices are on the verge of unfolding for advanced quantum technology applications. In this review, we focus on the latest significant progress of QD photonic devices. We first discuss advanced technologies in QD growth, with special attention to droplet epitaxy and site-controlled QDs. Then we overview the wavelength engineering of QDs via strain tuning and quantum frequency conversion techniques. We extend our discussion to advanced optical excitation techniques recently developed for achieving the desired emission properties of QDs. Finally, the advances in heterogeneous integration of active quantum light-emitting devices and passive integrated photonic circuits are reviewed, in the context of realizing scalable quantum information processing chips.
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Affiliation(s)
- Tian Ming Zhao
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Yan Chen
- Institute for Integrative Nanosciences, Leibniz IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany
| | - Ying Yu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Qing Li
- Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, USA
| | - Marcelo Davanco
- Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | - Jin Liu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
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20
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Elshaari AW, Pernice W, Srinivasan K, Benson O, Zwiller V. Hybrid integrated quantum photonic circuits. NATURE PHOTONICS 2020; 14:10.1038/s41566-020-0609-x. [PMID: 34815738 PMCID: PMC8607459 DOI: 10.1038/s41566-020-0609-x] [Citation(s) in RCA: 141] [Impact Index Per Article: 35.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/05/2019] [Accepted: 02/24/2020] [Indexed: 05/06/2023]
Abstract
Recent developments in chip-based photonic quantum circuits has radically impacted quantum information processing. However, it is challenging for monolithic photonic platforms to meet the stringent demands of most quantum applications. Hybrid platforms combining different photonic technologies in a single functional unit have great potential to overcome the limitations of monolithic photonic circuits. Our review summarizes the progress of hybrid quantum photonics integration, discusses important design considerations including optical connectivity and operation conditions, then highlights several successful realizations of key physical resources for building a quantum-teleporter. We conclude by discussing the roadmap for realizing future advanced large-scale hybrid devices, beyond the solid state platform, which hold great potential for quantum information applications.
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Affiliation(s)
- Ali W Elshaari
- Department of Applied Physics, KTH Royal Institute of Technology, SE-100 44 Stockholm, Sweden
| | - Wolfram Pernice
- Institute of Physics, University of Muenster, Heisenbergstr, 11, 48149 Muenster, Germany
| | - Kartik Srinivasan
- Microsystems and Nanotechnology Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
- Joint Quantum Institute, NIST/University of Maryland, College Park, MD 20742, USA
| | - Oliver Benson
- Humboldt Universität zu Berlin & IRIS Adlershof, Nanooptics, Newtonstraße 15, 12489, Berlin, Germany
| | - Val Zwiller
- Department of Applied Physics, KTH Royal Institute of Technology, SE-100 44 Stockholm, Sweden
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21
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Martini F, Gaggero A, Mattioli F, Leoni R. Single photon detection with superconducting nanowires on crystalline silicon carbide. OPTICS EXPRESS 2019; 27:29669-29675. [PMID: 31684224 DOI: 10.1364/oe.27.029669] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2019] [Accepted: 07/24/2019] [Indexed: 06/10/2023]
Abstract
Silicon carbide (SiC) is among the most promising optical materials for the realization of classical and quantum photonics, due to the simultaneous presence of quantum emitters and a non-centrosymmetric crystal structure. In recent years, progress have been made in the development of SiC integrated optical components making this a mature platform for the implementation of quantum experiments on chip. Toward this scope, the fabrication of a single photon detector that can be implemented on top of a photonic circuit is essential to achieve a monolithic integration of all the fundamental building blocks required for photonic quantum technologies. Here we demonstrate for the first time single photon detection with superconducting nanowires on top of a bare 3C SiC layer using a novel approach for the fiber-to-detector coupling that allows the optical characterization of multiple detectors without the use of neither cryogenic positioners nor the micromachining of the substrate.
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22
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Chen Y, Whitehead J, Ryou A, Zheng J, Xu P, Fryett T, Majumdar A. Large thermal tuning of a polymer-embedded silicon nitride nanobeam cavity. OPTICS LETTERS 2019; 44:3058-3061. [PMID: 31199380 DOI: 10.1364/ol.44.003058] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/15/2019] [Accepted: 05/22/2019] [Indexed: 05/26/2023]
Abstract
Tunable silicon nitride nanophotonic resonators are a critical building block for integrated photonic systems in the visible wavelength range. We experimentally demonstrate a thermally tunable polymer-embedded silicon nitride nanobeam cavity with a tuning efficiency of 44 pm/°C and 0.13 nm/mW in the near-visible wavelength range. The large tuning efficiency comes from the high thermo-optic coefficient of the SU-8 polymer and the "air-mode" cavity design, where a large portion of the cavity field is confined inside the polymer region. The demonstrated resonator will enable locally tunable cavity quantum electrodynamic experiments in the silicon nitride platform.
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23
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Aghaeimeibodi S, Kim JH, Lee CM, Buyukkaya MA, Richardson C, Waks E. Silicon photonic add-drop filter for quantum emitters. OPTICS EXPRESS 2019; 27:16882-16889. [PMID: 31252907 DOI: 10.1364/oe.27.016882] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/20/2019] [Accepted: 05/21/2019] [Indexed: 06/09/2023]
Abstract
Integration of single-photon sources and detectors to silicon-based photonics opens the possibility of complex circuits for quantum information processing. In this work, we demonstrate integration of quantum dots with a silicon photonic add-drop filter for on-chip filtering and routing of telecom photons. A silicon microdisk resonator acts as a narrow filter that transfers the quantum dot emission and filters the background over a wide wavelength range. Moreover, by tuning the quantum dot emission wavelength over the resonance of the microdisk, we can control the transmission of the quantum dot emission to the drop and through channels of the add-drop filter. This result is a step toward the on-chip control of single photons using silicon photonics for applications in quantum information processing, such as linear optical quantum computation and boson sampling.
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24
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Gourgues R, Zadeh IE, Elshaari AW, Bulgarini G, Los JWN, Zichi J, Dalacu D, Poole PJ, Dorenbos SN, Zwiller V. Controlled integration of selected detectors and emitters in photonic integrated circuits. OPTICS EXPRESS 2019; 27:3710-3716. [PMID: 30732386 DOI: 10.1364/oe.27.003710] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/01/2018] [Accepted: 12/22/2018] [Indexed: 06/09/2023]
Abstract
Integration of superconducting nanowire single-photon detectors and quantum sources with photonic waveguides is crucial for realizing advanced quantum integrated circuits. However, scalability is hindered by stringent requirements on high-performance detectors. Here we overcome the yield limitation by controlled coupling of photonic channels to pre-selected detectors based on measuring critical current, timing resolution, and detection efficiency. As a proof of concept of our approach, we demonstrate a hybrid on-chip full-transceiver consisting of a deterministically integrated detector coupled to a selected nanowire quantum dot through a filtering circuit made of a silicon nitride waveguide and a ring resonator filter, delivering 100 dB suppression of the excitation laser. In addition, we perform extensive testing of the detectors before and after integration in the photonic circuit and show that the high performance of the superconducting nanowire detectors, including timing jitter down to 23 ± 3 ps, is maintained. Our approach is fully compatible with wafer-level automated testing in a cleanroom environment.
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