1
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Han H, Zhang B, Zhang Z, Wang Y, Liu C, Singh AK, Song A, Li Y, Jin J, Zhang J. Light-Triggered Anti-ambipolar Transistor Based on an In-Plane Lateral Homojunction. NANO LETTERS 2024; 24:8602-8608. [PMID: 38954477 DOI: 10.1021/acs.nanolett.4c01679] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/04/2024]
Abstract
Currently, the construction of anti-ambipolar transistors (AATs) is primarily based on asymmetric heterostructures, which are challenging to fabricate. AATs used for photodetection are accompanied by dark currents that prove difficult to suppress, resulting in reduced sensitivity. This work presents light-triggered AATs based on an in-plane lateral WSe2 homojunction without van der Waals heterostructures. In this device, the WSe2 channel is partially electrically controlled by the back gate due to the screening effect of the bottom electrode, resulting in a homojunction that is dynamically modulated with gate voltage, exhibiting electrostatically reconfigurable and light-triggered anti-ambipolar behaviors. It exhibits high responsivity (188 A/W) and detectivity (8.94 × 1014 Jones) under 635 nm illumination with a low power density of 0.23 μW/cm2, promising a new approach to low-power, high-performance photodetectors. Moreover, the device demonstrates efficient self-driven photodetection. Furthermore, ternary inverters are realized using monolithic WSe2, simplifying the manufacturing of multivalued logic devices.
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Affiliation(s)
- Hecheng Han
- Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuit, Shandong University, Jinan 250101, China
| | - Baoqing Zhang
- Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuit, Shandong University, Jinan 250101, China
| | - Zihao Zhang
- Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuit, Shandong University, Jinan 250101, China
| | - Yiming Wang
- Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuit, Shandong University, Jinan 250101, China
| | - Chuan Liu
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China
| | - Arun Kumar Singh
- Department of Electronics and Communications Engineering, Punjab Engineering College (Deemed to be University), Chandigarh 160012, India
| | - Aimin Song
- Department of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL, United Kingdom
- Institute of Nanoscience and Applications, Southern University of Science and Technology, Shenzhen 518055, China
| | - Yuxiang Li
- Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuit, Shandong University, Jinan 250101, China
| | - Jidong Jin
- Department of Photonics and Nanoelectronics, Hanyang University, Ansan 15588, Republic of Korea
| | - Jiawei Zhang
- Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuit, Shandong University, Jinan 250101, China
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2
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Ma H, Chen X, Han Y, Zhang J, Wen K, Cheng S, Zhao Q, Wang Y, Wu J, Shao J. Ice-Enabled Transfer of Graphene on Copper Substrates Enhanced by Electric Field and Cu 2O. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2402319. [PMID: 38924683 DOI: 10.1002/advs.202402319] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/04/2024] [Revised: 06/02/2024] [Indexed: 06/28/2024]
Abstract
Graphene films grown by the chemical vapor deposition (CVD) method suffer from contamination and damage during transfer. Herein, an innovative ice-enabled transfer method under an applied electric field and in the presence of Cu2O (or Cu2O-Electric-field Ice Transfer, abbreviated as CEIT) is developed. Ice serves as a pollution-free transfer medium while water molecules under the electric field fully wet the graphene surface for a bolstered adhesion force between the ice and graphene. Cu2O is used to reduce the adhesion force between graphene and copper. The combined methodology in CEIT ensures complete separation and clean transfer of graphene, resulting in successfully transferred graphene to various substrates, including polydimethylsiloxane (PDMS), Teflon, and C4F8 without pollution. The graphene obtained via CEIT is utilized to fabricate field-effect transistors with electrical performances comparable to that of intrinsic graphene characterized by small Dirac points and high carrier mobility. The carrier mobility of the transferred graphene reaches 9090 cm2 V-1 s-1, demonstrating a superior carrier mobility over that from other dry transfer methods. In a nutshell, the proposed clean and efficient transfer method holds great potential for future applications of graphene.
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Affiliation(s)
- Hechuan Ma
- Micro- and Nanotechnology Research Center, State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, Shannxi, 710049, China
| | - Xiaoming Chen
- Micro- and Nanotechnology Research Center, State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, Shannxi, 710049, China
- XJTU-POLIMI Joint School of Design and Innovation, Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
| | - Yufei Han
- Micro- and Nanotechnology Research Center, State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, Shannxi, 710049, China
| | - Jie Zhang
- Electronic Materials Research Lab, Key Laboratory of the Ministry of Education, Xi'an Jiaotong University, Xi'an, Shaanxi, 710049, China
| | - Kaiqiang Wen
- Micro- and Nanotechnology Research Center, State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, Shannxi, 710049, China
| | - Siyi Cheng
- Micro- and Nanotechnology Research Center, State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, Shannxi, 710049, China
| | - Quanyi Zhao
- Micro- and Nanotechnology Research Center, State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, Shannxi, 710049, China
| | - Yijie Wang
- Micro- and Nanotechnology Research Center, State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, Shannxi, 710049, China
| | - Jianyang Wu
- Department of Physics, Jiujiang Research Institute and Research Institute for Biomimetics and Soft Matter, Fujian Provincial Key Laboratory for Soft Functional Materials Research, Xiamen University, Xiamen, 361005, China
| | - Jinyou Shao
- Micro- and Nanotechnology Research Center, State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, Shannxi, 710049, China
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3
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Pham PV, Mai TH, Dash SP, Biju V, Chueh YL, Jariwala D, Tung V. Transfer of 2D Films: From Imperfection to Perfection. ACS NANO 2024; 18:14841-14876. [PMID: 38810109 PMCID: PMC11171780 DOI: 10.1021/acsnano.4c00590] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/14/2024] [Revised: 04/03/2024] [Accepted: 04/12/2024] [Indexed: 05/31/2024]
Abstract
Atomically thin 2D films and their van der Waals heterostructures have demonstrated immense potential for breakthroughs and innovations in science and technology. Integrating 2D films into electronics and optoelectronics devices and their applications in electronics and optoelectronics can lead to improve device efficiencies and tunability. Consequently, there has been steady progress in large-area 2D films for both front- and back-end technologies, with a keen interest in optimizing different growth and synthetic techniques. Parallelly, a significant amount of attention has been directed toward efficient transfer techniques of 2D films on different substrates. Current methods for synthesizing 2D films often involve high-temperature synthesis, precursors, and growth stimulants with highly chemical reactivity. This limitation hinders the widespread applications of 2D films. As a result, reports concerning transfer strategies of 2D films from bare substrates to target substrates have proliferated, showcasing varying degrees of cleanliness, surface damage, and material uniformity. This review aims to evaluate, discuss, and provide an overview of the most advanced transfer methods to date, encompassing wet, dry, and quasi-dry transfer methods. The processes, mechanisms, and pros and cons of each transfer method are critically summarized. Furthermore, we discuss the feasibility of these 2D film transfer methods, concerning their applications in devices and various technology platforms.
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Affiliation(s)
- Phuong V. Pham
- Department
of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - The-Hung Mai
- Department
of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - Saroj P. Dash
- Department
of Microtechnology and Nanoscience, Chalmers
University of Technology, Gothenburg 41296, Sweden
| | - Vasudevanpillai Biju
- Research
Institute for Electronic Science, Hokkaido
University, Hokkaido 001-0020, Japan
| | - Yu-Lun Chueh
- Department
of Materials Science and Engineering, National
Tsing Hua University, Hsinchu 30013, Taiwan
| | - Deep Jariwala
- Department
of Electrical and Systems Engineering, University
of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Vincent Tung
- Department
of Chemical System Engineering, School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan
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4
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Naito H, Makino Y, Zhang W, Ogawa T, Endo T, Sannomiya T, Kaneda M, Hashimoto K, Lim HE, Nakanishi Y, Watanabe K, Taniguchi T, Matsuda K, Miyata Y. High-throughput dry transfer and excitonic properties of twisted bilayers based on CVD-grown transition metal dichalcogenides. NANOSCALE ADVANCES 2023; 5:5115-5121. [PMID: 37705802 PMCID: PMC10496764 DOI: 10.1039/d3na00371j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/30/2023] [Accepted: 08/21/2023] [Indexed: 09/15/2023]
Abstract
van der Waals (vdW) layered materials have attracted much attention because their physical properties can be controlled by varying the twist angle and layer composition. However, such twisted vdW assemblies are often prepared using mechanically exfoliated monolayer flakes with unintended shapes through a time-consuming search for such materials. Here, we report the rapid and dry fabrication of twisted multilayers using chemical vapor deposition (CVD) grown transition metal chalcogenide (TMDC) monolayers. By improving the adhesion of an acrylic resin stamp to the monolayers, the single crystals of various TMDC monolayers with desired grain size and density on a SiO2/Si substrate can be efficiently picked up. The present dry transfer process demonstrates the one-step fabrication of more than 100 twisted bilayers and the sequential stacking of a twisted 10-layer MoS2 single crystal. Furthermore, we also fabricated hBN-encapsulated TMDC monolayers and various twisted bilayers including MoSe2/MoS2, MoSe2/WSe2, and MoSe2/WS2. The interlayer interaction and quality of dry-transferred, CVD-grown TMDCs were characterized by using photoluminescence (PL), cathodoluminescence (CL) spectroscopy, and cross-sectional electron microscopy. The prominent PL peaks of interlayer excitons can be observed for MoSe2/MoS2 and MoSe2/WSe2 with small twist angles at room temperature. We also found that the optical spectra were locally modulated due to nanosized bubbles, which are formed by the presence of interface carbon impurities. The present findings indicate the widely applicable potential of the present method and enable an efficient search of the emergent optical and electrical properties of TMDC-based vdW heterostructures.
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Affiliation(s)
- Hibiki Naito
- Department of Physics, Tokyo Metropolitan University Hachioji 192-0397 Japan
| | - Yasuyuki Makino
- Department of Physics, Tokyo Metropolitan University Hachioji 192-0397 Japan
| | - Wenjin Zhang
- Department of Physics, Tokyo Metropolitan University Hachioji 192-0397 Japan
| | - Tomoya Ogawa
- Department of Physics, Tokyo Metropolitan University Hachioji 192-0397 Japan
| | - Takahiko Endo
- Department of Physics, Tokyo Metropolitan University Hachioji 192-0397 Japan
| | - Takumi Sannomiya
- Department of Materials Science and Engineering, Tokyo Institute of Technology Yokohama 226-8503 Japan
| | - Masahiko Kaneda
- Department of Physics, Tokyo Metropolitan University Hachioji 192-0397 Japan
| | - Kazuki Hashimoto
- Department of Physics, Tokyo Metropolitan University Hachioji 192-0397 Japan
| | - Hong En Lim
- Department of Chemistry, Saitama University Saitama 338-8570 Japan
| | - Yusuke Nakanishi
- Department of Physics, Tokyo Metropolitan University Hachioji 192-0397 Japan
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, NIMS Tsukuba 305-0044 Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, NIMS Tsukuba 305-0044 Japan
| | - Kazunari Matsuda
- Institute of Advanced Energy, Kyoto University Kyoto 611-0011 Japan
| | - Yasumitsu Miyata
- Department of Physics, Tokyo Metropolitan University Hachioji 192-0397 Japan
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5
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Sheng Z, Dong J, Hu W, Wang Y, Sun H, Zhang DW, Zhou P, Zhang Z. Reconfigurable Logic-in-Memory Computing Based on a Polarity-Controllable Two-Dimensional Transistor. NANO LETTERS 2023. [PMID: 37235483 DOI: 10.1021/acs.nanolett.3c01248] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Logic-in-memory architecture holds great promise to meet the high-performance and energy-efficient requirements of data-intensive scenarios. Two-dimensional compacted transistors embedded with logic functions are expected to extend Moore's law toward advanced nodes. Here we demonstrate that a WSe2/h-BN/graphene based middle-floating-gate field-effect transistor can perform under diverse current levels due to the controllable polarity by the control gate, floating gate, and drain voltages. Such electrical tunable characteristics are employed for logic-in-memory architectures and can behave as reconfigurable logic functions of AND/XNOR within a single device. Compared to the conventional devices like floating-gate field-effect transistors, our design can greatly decrease the consumption of transistors. For AND/NAND, it can save 75% transistors by reducing the transistor number from 4 to 1; for XNOR/XOR, it is even up to 87.5% with the number being reduced from 8 to 1.
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Affiliation(s)
- Zhe Sheng
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Jianguo Dong
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Wennan Hu
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Yue Wang
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Haoran Sun
- School of Microelectronics, Fudan University, Shanghai 200433, China
| | - David Wei Zhang
- School of Microelectronics, Fudan University, Shanghai 200433, China
- National Integrated Circuit Innovation Center, No.825 Zhangheng Road, Shanghai 201203, China
| | - Peng Zhou
- School of Microelectronics, Fudan University, Shanghai 200433, China
- National Integrated Circuit Innovation Center, No.825 Zhangheng Road, Shanghai 201203, China
| | - Zengxing Zhang
- School of Microelectronics, Fudan University, Shanghai 200433, China
- National Integrated Circuit Innovation Center, No.825 Zhangheng Road, Shanghai 201203, China
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6
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Lu Z, Chen Y, Dang W, Kong L, Tao Q, Ma L, Lu D, Liu L, Li W, Li Z, Liu X, Wang Y, Duan X, Liao L, Liu Y. Wafer-scale high-κ dielectrics for two-dimensional circuits via van der Waals integration. Nat Commun 2023; 14:2340. [PMID: 37095079 PMCID: PMC10125989 DOI: 10.1038/s41467-023-37887-x] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/08/2022] [Accepted: 04/04/2023] [Indexed: 04/26/2023] Open
Abstract
The practical application of two-dimensional (2D) semiconductors for high-performance electronics requires the integration with large-scale and high-quality dielectrics-which however have been challenging to deposit to date, owing to their dangling-bonds-free surface. Here, we report a dry dielectric integration strategy that enables the transfer of wafer-scale and high-κ dielectrics on top of 2D semiconductors. By utilizing an ultra-thin buffer layer, sub-3 nm thin Al2O3 or HfO2 dielectrics could be pre-deposited and then mechanically dry-transferred on top of MoS2 monolayers. The transferred ultra-thin dielectric film could retain wafer-scale flatness and uniformity without any cracks, demonstrating a capacitance up to 2.8 μF/cm2, equivalent oxide thickness down to 1.2 nm, and leakage currents of ~10-7 A/cm2. The fabricated top-gate MoS2 transistors showed intrinsic properties without doping effects, exhibiting on-off ratios of ~107, subthreshold swing down to 68 mV/dec, and lowest interface states of 7.6×109 cm-2 eV-1. We also show that the scalable top-gate arrays can be used to construct functional logic gates. Our study provides a feasible route towards the vdW integration of high-κ dielectric films using an industry-compatible ALD process with well-controlled thickness, uniformity and scalability.
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Affiliation(s)
- Zheyi Lu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Yang Chen
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Weiqi Dang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Lingan Kong
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Quanyang Tao
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Likuan Ma
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Donglin Lu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Liting Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Wanying Li
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Zhiwei Li
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Xiao Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Yiliu Wang
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Xidong Duan
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
| | - Lei Liao
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Yuan Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China.
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7
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Yang SJ, Choi MY, Kim CJ. Engineering Grain Boundaries in Two-Dimensional Electronic Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2203425. [PMID: 35777352 DOI: 10.1002/adma.202203425] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/15/2022] [Revised: 06/30/2022] [Indexed: 06/15/2023]
Abstract
Engineering the boundary structures in 2D materials provides an unprecedented opportunity to program the physical properties of the materials with extensive tunability and realize innovative devices with advanced functionalities. However, structural engineering technology is still in its infancy, and creating artificial boundary structures with high reproducibility remains difficult. In this review, various emergent properties of 2D materials with different grain boundaries, and the current techniques to control the structures, are introduced. The remaining challenges for scalable and reproducible structure control and the outlook on the future directions of the related techniques are also discussed.
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Affiliation(s)
- Seong-Jun Yang
- Center for Epitaxial van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, Gyeongbuk, 37673, Republic of Korea
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, 37673, Republic of Korea
| | - Min-Yeong Choi
- Center for Epitaxial van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, Gyeongbuk, 37673, Republic of Korea
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, 37673, Republic of Korea
| | - Cheol-Joo Kim
- Center for Epitaxial van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, Gyeongbuk, 37673, Republic of Korea
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, 37673, Republic of Korea
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8
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Li H, Xiong X, Hui F, Yang D, Jiang J, Feng W, Han J, Duan J, Wang Z, Sun L. Constructing van der Waals heterostructures by dry-transfer assembly for novel optoelectronic device. NANOTECHNOLOGY 2022; 33:465601. [PMID: 35313295 DOI: 10.1088/1361-6528/ac5f96] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/07/2021] [Accepted: 03/21/2022] [Indexed: 06/14/2023]
Abstract
Since the first successful exfoliation of graphene, the superior physical and chemical properties of two-dimensional (2D) materials, such as atomic thickness, strong in-plane bonding energy and weak inter-layer van der Waals (vdW) force have attracted wide attention. Meanwhile, there is a surge of interest in novel physics which is absent in bulk materials. Thus, vertical stacking of 2D materials could be critical to discover such physics and develop novel optoelectronic applications. Although vdW heterostructures have been grown by chemical vapor deposition, the available choices of materials for stacking is limited and the device yield is yet to be improved. Another approach to build vdW heterostructure relies on wet/dry transfer techniques like stacking Lego bricks. Although previous reviews have surveyed various wet transfer techniques, novel dry transfer techniques have been recently been demonstrated, featuring clean and sharp interfaces, which also gets rid of contamination, wrinkles, bubbles formed during wet transfer. This review summarizes the optimized dry transfer methods, which paves the way towards high-quality 2D material heterostructures with optimized interfaces. Such transfer techniques also lead to new physical phenomena while enable novel optoelectronic applications on artificial vdW heterostructures, which are discussed in the last part of this review.
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Affiliation(s)
- Huihan Li
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Xiaolu Xiong
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Fei Hui
- School of Materials Science and Engineering, The Key Laboratory of Material Processing and Mold of Ministry of Education, Henan Key Laboratory of Advanced Nylon Materials and Application, Zhengzhou University, Zhengzhou, 450001, People's Republic of China
| | - Dongliang Yang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Jinbao Jiang
- School of Microelectronic Science and Technology, Sun Yat-Sen University, Zhuhai, 519082, People's Republic of China
| | - Wanxiang Feng
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Junfeng Han
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Junxi Duan
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Zhongrui Wang
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, People's Republic of China
| | - Linfeng Sun
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
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9
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Li N, Okmi A, Jabegu T, Zheng H, Chen K, Lomashvili A, Williams W, Maraba D, Kravchenko I, Xiao K, He K, Lei S. van der Waals Semiconductor Empowered Vertical Color Sensor. ACS NANO 2022; 16:8619-8629. [PMID: 35436098 DOI: 10.1021/acsnano.1c09875] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Biomimetic artificial vision is receiving significant attention nowadays, particularly for the development of neuromorphic electronic devices, artificial intelligence, and microrobotics. Nevertheless, color recognition, the most critical vision function, is missed in the current research due to the difficulty of downscaling of the prevailing color sensing devices. Conventional color sensors typically adopt a lateral color sensing channel layout and consume a large amount of physical space, whereas compact designs suffer from an unsatisfactory color detection accuracy. In this work, we report a van der Waals semiconductor-empowered vertical color sensing structure with the emphasis on compact device profile and precise color recognition capability. More attractive, we endow color sensor hardware with the function of chromatic aberration correction, which can simplify the design of an optical lens system and, in turn, further downscales the artificial vision systems. Also, the dimension of a multiple pixel prototype device in our study confirms the scalability and practical potentials of our developed device architecture toward the above applications.
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Affiliation(s)
- Ningxin Li
- Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, United States
| | - Aisha Okmi
- Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, United States
- Department of Physics, Jazan University, Jazan 45142, Saudi Arabia
| | - Tara Jabegu
- Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, United States
| | - Hongkui Zheng
- Department of Materials Science and Engineering, Clemson University, Clemson, South Carolina 29634, United States
| | - Kuangcai Chen
- Department of Chemistry, Georgia State University, Atlanta, Georgia 30303, United States
| | - Alexander Lomashvili
- Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, United States
| | - Westley Williams
- Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, United States
| | - Diren Maraba
- Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, United States
| | - Ivan Kravchenko
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830, United States
| | - Kai Xiao
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830, United States
| | - Kai He
- Department of Materials Science and Engineering, Clemson University, Clemson, South Carolina 29634, United States
- Department of Material Science and Engineering, University of California, Irvine, California 92697, United States
| | - Sidong Lei
- Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, United States
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10
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Li J, Liang J, Yang X, Li X, Zhao B, Li B, Duan X. Controllable Preparation of 2D Vertical van der Waals Heterostructures and Superlattices for Functional Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2107059. [PMID: 35297544 DOI: 10.1002/smll.202107059] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/15/2021] [Revised: 01/27/2022] [Indexed: 06/14/2023]
Abstract
2D van der Waals heterostructures (vdWHs) and superlattices (SLs) with exotic physical properties and applications for new devices have attracted immense interest. Compared to conventionally bonded heterostructures, the dangling-bond-free surface of 2D layered materials allows for the feasible integration of various materials to produce vdWHs without the requirements of lattice matching and processing compatibility. The quality of interfaces in artificially stacked vdWHs/vdWSLs and scalability of production remain among the major challenges in the field of 2D materials. Fortunately, bottom-up methods exhibit relatively high controllability and flexibility. The growth parameters, such as the temperature, precursors, substrate, and carrier gas, can be carefully and comprehensively controlled to produce high-quality interfaces and wafer-scale products of vdWHs/vdWSLs. This review focuses on three types of bottom-up methods for the assembly of vdWHs and vdWSLs with atomically clean and electronically sharp interfaces: chemical/physical vapor deposition, metal-organic chemical vapor deposition, and ultrahigh vacuum growth. These methods can intuitively illustrate the great flexibility and controllability of bottom-up methods for the preparation of vdWHs/vdWSLs. The latest progress in vdWHs and vdWSLs, related physical phenomena, and (opto)electronic devices are summarized. Finally, the authors discuss current challenges and future perspectives in the synthesis and application of vdWHs and vdWSLs.
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Affiliation(s)
- Jia Li
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Jingyi Liang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Xiangdong Yang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Xin Li
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Bei Zhao
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Bo Li
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
- School of Physics and Electronics, Hunan University, Changsha, P. R. China
| | - Xidong Duan
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
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11
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Yang SJ, Jung JH, Lee E, Han E, Choi MY, Jung D, Choi S, Park JH, Oh D, Noh S, Kim KJ, Huang PY, Hwang CC, Kim CJ. Wafer-Scale Programmed Assembly of One-Atom-Thick Crystals. NANO LETTERS 2022; 22:1518-1524. [PMID: 35119873 DOI: 10.1021/acs.nanolett.1c04139] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Crystalline films offer various physical properties based on the modulation of their thicknesses and atomic structures. The layer-by-layer assembly of atomically thin crystals provides a powerful means to arbitrarily design films at the atomic level, which are unattainable with existing growth technologies. However, atomically clean assembly of the materials with high scalability and reproducibility remains challenging. We report programmed crystal assembly of graphene and monolayer hexagonal boron nitride, assisted by van der Waals interactions, to form wafer-scale films of pristine interfaces with near-unity yield. The atomic configurations of the films are tailored with layer-resolved compositions and in-plane crystalline orientations. We demonstrate batch-fabricated tunnel device arrays with modulation of the resistance over orders of magnitude by thickness control of the hexagonal boron nitride barrier with single-atom precision and large-scale, twisted multilayer graphene with programmable electronic band structures and crystal symmetries. Our results constitute an important development in the artificial design of large-scale films.
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Affiliation(s)
- Seong-Jun Yang
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk 37673, Republic of Korea
| | - Ju-Hyun Jung
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk 37673, Republic of Korea
| | - Eunsook Lee
- Beamline Research Division, Pohang Accelerator Laboratory, Pohang, Gyeongbuk 37673, Republic of Korea
| | - Edmund Han
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Min-Yeong Choi
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk 37673, Republic of Korea
| | - Daesung Jung
- Convergence Research Center for Energy and Environmental Sciences, Sungkyunkwan University, Suwon, Gyeonggi 16419, Republic of Korea
| | - Shinyoung Choi
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk 37673, Republic of Korea
| | - Jun-Ho Park
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk 37673, Republic of Korea
| | - Dongseok Oh
- Beamline Research Division, Pohang Accelerator Laboratory, Pohang, Gyeongbuk 37673, Republic of Korea
| | - Siwoo Noh
- Beamline Research Division, Pohang Accelerator Laboratory, Pohang, Gyeongbuk 37673, Republic of Korea
| | - Ki-Jeong Kim
- Beamline Research Division, Pohang Accelerator Laboratory, Pohang, Gyeongbuk 37673, Republic of Korea
| | - Pinshane Y Huang
- Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Chan-Cuk Hwang
- Beamline Research Division, Pohang Accelerator Laboratory, Pohang, Gyeongbuk 37673, Republic of Korea
| | - Cheol-Joo Kim
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk 37673, Republic of Korea
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12
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Liu M, Wang L, Yu G. Developing Graphene-Based Moiré Heterostructures for Twistronics. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2103170. [PMID: 34723434 PMCID: PMC8728823 DOI: 10.1002/advs.202103170] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/23/2021] [Revised: 09/08/2021] [Indexed: 06/13/2023]
Abstract
Graphene-based moiré heterostructures are strongly correlated materials, and they are considered to be an effective platform to investigate the challenges of condensed matter physics. This is due to the distinct electronic properties that are unique to moiré superlattices and peculiar band structures. The increasing research on strongly correlated physics via graphene-based moiré heterostructures, especially unconventional superconductors, greatly promotes the development of condensed matter physics. Herein, the preparation methods of graphene-based moiré heterostructures on both in situ growth and assembling monolayer 2D materials are discussed. Methods to improve the quality of graphene and optimize the transfer process are presented to mitigate the limitations of low-quality graphene and damage caused by the transfer process during the fabrication of graphene-based moiré heterostructures. Then, the topological properties in various graphene-based moiré heterostructures are reviewed. Furthermore, recent advances regarding the factors that influence physical performances via a changing twist angle, the exertion of strain, and regulation of the dielectric environment are presented. Moreover, various unique physical properties in graphene-based moiré heterostructures are demonstrated. Finally, the challenges faced during the preparation and characterization of graphene-based moiré heterostructures are discussed. An outlook for the further development of moiré heterostructures is also presented.
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Affiliation(s)
- Mengya Liu
- School of Materials Science and EngineeringUniversity of Science and Technology BeijingBeijing100083P. R. China
- Beijing National Laboratory for Molecular SciencesCAS Research/Education Center for Excellence in Molecular SciencesInstitute of ChemistryChinese Academy of SciencesBeijing100190P. R. China
| | - Liping Wang
- School of Materials Science and EngineeringUniversity of Science and Technology BeijingBeijing100083P. R. China
| | - Gui Yu
- Beijing National Laboratory for Molecular SciencesCAS Research/Education Center for Excellence in Molecular SciencesInstitute of ChemistryChinese Academy of SciencesBeijing100190P. R. China
- School of Chemical SciencesUniversity of Chinese Academy of SciencesBeijing100049P. R. China
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13
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Gao Y, Chen J, Chen G, Fan C, Liu X. Recent Progress in the Transfer of Graphene Films and Nanostructures. SMALL METHODS 2021; 5:e2100771. [PMID: 34928026 DOI: 10.1002/smtd.202100771] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/07/2021] [Revised: 10/13/2021] [Indexed: 06/14/2023]
Abstract
The one-atom-thick graphene has excellent electronic, optical, thermal, and mechanical properties. Currently, chemical vapor deposition (CVD) graphene has received a great deal of attention because it provides access to large-area and uniform films with high-quality. This allows the fabrication of graphene based-electronics, sensors, photonics, and optoelectronics for practical applications. Zero bandgap, however, limits the application of a graphene film as electronic transistor. The most commonly used bottom-up approaches have achieved efficient tuning of the electronic bandgap by customizing well-defined graphene nanostructures. The postgrowth transfer of graphene films/nanostructures to a certain substrate is crucial in utilizing graphene in applicable devices. In this review, the basic growth mechanism of CVD graphene is first introduced. Then, recent advances in various transfer methods of as-grown graphene to target substrates are presented. The fabrication and transfer methods of graphene nanostructures are also provided, and then the transfer-related applications are summarized. At last, the challenging issues and the potential transfer-free approaches are discussed.
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Affiliation(s)
- Yanjing Gao
- School of Chemistry and Chemical Engineering, Frontiers Science Centre for Transformative Molecules, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Jielin Chen
- School of Chemistry and Chemical Engineering, Frontiers Science Centre for Transformative Molecules, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Guorui Chen
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Chunhai Fan
- School of Chemistry and Chemical Engineering, Frontiers Science Centre for Transformative Molecules, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Xiaoguo Liu
- School of Chemistry and Chemical Engineering, Frontiers Science Centre for Transformative Molecules, Shanghai Jiao Tong University, Shanghai, 200240, China
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14
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Song Y, Zou W, Lu Q, Lin L, Liu Z. Graphene Transfer: Paving the Road for Applications of Chemical Vapor Deposition Graphene. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2007600. [PMID: 33661572 DOI: 10.1002/smll.202007600] [Citation(s) in RCA: 32] [Impact Index Per Article: 10.7] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/02/2020] [Revised: 01/07/2021] [Indexed: 06/12/2023]
Abstract
Owing to the fascinating properties of graphene, fulfilling the promising characteristics of graphene in applications has ignited enormous scientific and industrial interest. Chemical vapor deposition (CVD) growth of graphene on metal substrates provides tantalizing opportunities for the large-area synthesis of graphene in a controllable manner. However, the tedious transfer of graphene from metal substrates onto desired substrates remains inevitable, and cracks of graphene membrane, transfer-induced doping, wrinkles as well as surface contamination can be incurred during the transfer, which highly degrade the performance of graphene. Furthermore, new issues can arise when moving to large-scale transfer at an industrial scale, thus cost-efficient and environment-friendly transfer techniques also become imperative. The aim of this review is to provide a comprehensive understanding of transfer-related issues and the corresponding experimental solutions and to provide an outlook for future transfer techniques of CVD graphene films on an industrial scale.
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Affiliation(s)
- Yuqing Song
- Beijing Graphene Institute (BGI), Beijing, 100095, P. R. China
- Center for Nanochemistry (CNC), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Wentao Zou
- School of Materials, University of Manchester, Manchester, M13 9PL, UK
| | - Qi Lu
- State Key Laboratory of Heavy Oil Processing, College of Science, China, University of Petroleum, Beijing, 102249, P. R. China
| | - Li Lin
- School of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, UK
| | - Zhongfan Liu
- Beijing Graphene Institute (BGI), Beijing, 100095, P. R. China
- Center for Nanochemistry (CNC), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
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15
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Jin X, Gu TH, Kwon NH, Hwang SJ. Synergetic Advantages of Atomically Coupled 2D Inorganic and Graphene Nanosheets as Versatile Building Blocks for Diverse Functional Nanohybrids. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2005922. [PMID: 33890336 DOI: 10.1002/adma.202005922] [Citation(s) in RCA: 23] [Impact Index Per Article: 7.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2020] [Revised: 10/20/2020] [Indexed: 05/05/2023]
Abstract
2D nanostructured materials, including inorganic and graphene nanosheets, have evoked plenty of scientific research activity due to their intriguing properties and excellent functionalities. The complementary advantages and common 2D crystal shapes of inorganic and graphene nanosheets render their homogenous mixtures powerful building blocks for novel high-performance functional hybrid materials. The nanometer-level thickness of 2D inorganic/graphene nanosheets allows the achievement of unusually strong electronic couplings between sheets, leading to a remarkable improvement in preexisting functionalities and the creation of unexpected properties. The synergetic merits of atomically coupled 2D inorganic-graphene nanosheets are presented here in the exploration of novel heterogeneous functional materials, with an emphasis on their critical roles as hybridization building blocks, interstratified sheets, additives, substrates, and deposited monolayers. The great flexibility and controllability of the elemental compositions, defect structures, and surface natures of inorganic-graphene nanosheets provide valuable opportunities for exploring high-performance nanohybrids applicable as electrodes for supercapacitors and rechargeable batteries, electrocatalysts, photocatalysts, and water purification agents, to give some examples. An outlook on future research perspectives for the exploitation of emerging 2D nanosheet-based hybrid materials is also presented along with novel synthetic strategies to maximize the synergetic advantage of atomically mixed 2D inorganic-graphene nanosheets.
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Affiliation(s)
- Xiaoyan Jin
- Department of Materials Science and Engineering, College of Engineering, Yonsei University, Seoul, 03722, Republic of Korea
| | - Tae-Ha Gu
- Department of Chemistry and Nanoscience, College of Natural Science, Ewha Womans University, Seoul, 03760, Republic of Korea
| | - Nam Hee Kwon
- Department of Materials Science and Engineering, College of Engineering, Yonsei University, Seoul, 03722, Republic of Korea
| | - Seong-Ju Hwang
- Department of Materials Science and Engineering, College of Engineering, Yonsei University, Seoul, 03722, Republic of Korea
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16
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Schranghamer TF, Sharma M, Singh R, Das S. Review and comparison of layer transfer methods for two-dimensional materials for emerging applications. Chem Soc Rev 2021; 50:11032-11054. [PMID: 34397050 DOI: 10.1039/d1cs00706h] [Citation(s) in RCA: 40] [Impact Index Per Article: 13.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/31/2022]
Abstract
Two-dimensional (2D) materials offer immense potential for scientific breakthroughs and technological innovations. While early demonstrations of 2D material-based electronics, optoelectronics, flextronics, straintronics, twistronics, and biomimetic devices exploited micromechanically-exfoliated single crystal flakes, recent years have witnessed steady progress in large-area growth techniques such as physical vapor deposition (PVD), chemical vapor deposition (CVD), and metal-organic CVD (MOCVD). However, use of high growth temperatures, chemically-active growth precursors and promoters, and the need for epitaxy often limit direct growth of 2D materials on the substrates of interest for commercial applications. This has led to the development of a large number of methods for the layer transfer of 2D materials from the growth substrate to the target application substrate with varying degrees of cleanliness, uniformity, and transfer-related damage. This review aims to catalog and discuss these layer transfer methods. In particular, the processes, advantages, and drawbacks of various transfer methods are discussed, as is their applicability to different technological platforms of interest for 2D material implementation.
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Affiliation(s)
- Thomas F Schranghamer
- Department of Engineering Science and Mechanics, Penn State University, University Park, PA 16802, USA.
| | - Madan Sharma
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
| | - Rajendra Singh
- Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India
| | - Saptarshi Das
- Department of Engineering Science and Mechanics, Penn State University, University Park, PA 16802, USA. and Department of Materials Science and Engineering, Penn State University, University Park, PA 16802, USA and Materials Research Institute, Penn State University, University Park, PA 16802, USA
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17
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Park JH, Yang SJ, Choi CW, Choi SY, Kim CJ. Pristine Graphene Insertion at the Metal/Semiconductor Interface to Minimize Metal-Induced Gap States. ACS APPLIED MATERIALS & INTERFACES 2021; 13:22828-22835. [PMID: 33950688 DOI: 10.1021/acsami.1c03299] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Metal (M) contact with a semiconductor (S) introduces metal-induced gap states (MIGS), which makes it difficult to study the intrinsic electrical properties of S. A bilayer of metal with graphene (Gr), i.e., a M/Gr bilayer, may form a contact with S to minimize MIGS. However, it has been challenging to realize the pristine M/Gr/S junctions without interfacial contaminants, which result in additional interfacial states. Here, we successfully demonstrate the atomically clean M/Gr/n-type silicon (Si) junctions via all-dry transfer of M/Gr bilayers onto Si. The fabricated M/Gr/Si junctions significantly increase the current density J at reverse bias, compared to those of M/Si junctions without a Gr interlayer (e.g., by 105 times for M = Au in Si(111)). The increase of the reverse J by a Gr interlayer is more prominent in Si(111) than in Si(100), whereas in M/Si junctions, J is independent of the type of Si surface. The different transport data between M/Gr/Si(111) and M/Gr/Si(100) are consistent with Fermi-level pinning by different surface states of Si(111) and Si(100). Our findings suggest the effective way to suppress MIGS by an introduction of the clean Gr interlayer, which paves the way to study intrinsic electrical properties of various materials.
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Affiliation(s)
- Jun-Ho Park
- Department of Chemical Engineering Pohang University of Science and Technology 77 Cheongam-Ro, Nam-Gu, Pohang 37673, Republic of Korea
| | - Seong-Jun Yang
- Department of Chemical Engineering Pohang University of Science and Technology 77 Cheongam-Ro, Nam-Gu, Pohang 37673, Republic of Korea
| | - Chang-Won Choi
- Department of Material Science & Engineering Pohang University of Science and Technology 77 Cheongam-Ro, Nam-Gu, Pohang 37673, Republic of Korea
| | - Si-Young Choi
- Department of Material Science & Engineering Pohang University of Science and Technology 77 Cheongam-Ro, Nam-Gu, Pohang 37673, Republic of Korea
| | - Cheol-Joo Kim
- Department of Chemical Engineering Pohang University of Science and Technology 77 Cheongam-Ro, Nam-Gu, Pohang 37673, Republic of Korea
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18
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Jin Y, Ka D, Jang S, Heo D, Seo JA, Jung H, Jeong K, Lee S. Fabrication of Graphene Based Durable Intelligent Personal Protective Clothing for Conventional and Non-Conventional Chemical Threats. NANOMATERIALS 2021; 11:nano11040940. [PMID: 33917143 PMCID: PMC8067836 DOI: 10.3390/nano11040940] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/05/2021] [Revised: 03/26/2021] [Accepted: 04/02/2021] [Indexed: 11/16/2022]
Abstract
Conventional or non-conventional chemical threat is gaining huge attention due to its unpredictable and mass destructive effects. Typical military protective suits have drawbacks such as high weight, bulky structure, and unpredictable lifetime. A durable, light, and scalable graphene e-fabric was fabricated from CVD-grown graphene by a simple co-lamination method. The sheet resistance was below 1 kΩ/sq over the wide surface area even after 1000 bending cycles. A graphene triboelectric nanogenerator showed the peak VOC of 68 V and the peak ICC of 14.4 μA and 1 μF capacitor was charged successfully in less than 1 s. A wearable chemical sensor was also fabricated and showed a sensitivity up to 53% for nerve chemical warfare agents (GD). DFT calculations were conducted to unveil the fundamental mechanisms underlying the graphene e-fabric sensor. Additionally, protection against chemical warfare agents was tested, and a design concept of graphene-based intelligent protective clothing has been proposed.
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Affiliation(s)
- Youngho Jin
- 4th R&D Institute, Agency for Defense Development, 6th Directorate, Daejeon 34186, Korea; (D.K.); (S.J.); (J.A.S.); (H.J.)
- Correspondence: (Y.J.); (S.L.); Tel.: +82-42-821-2203 (Y.J.); +82-2-820-5071 (S.L.)
| | - Dongwon Ka
- 4th R&D Institute, Agency for Defense Development, 6th Directorate, Daejeon 34186, Korea; (D.K.); (S.J.); (J.A.S.); (H.J.)
| | - Seongon Jang
- 4th R&D Institute, Agency for Defense Development, 6th Directorate, Daejeon 34186, Korea; (D.K.); (S.J.); (J.A.S.); (H.J.)
| | - Deokjae Heo
- School of Mechanical Engineering, Chung-Ang University, Seoul 06911, Korea;
| | - Jin Ah Seo
- 4th R&D Institute, Agency for Defense Development, 6th Directorate, Daejeon 34186, Korea; (D.K.); (S.J.); (J.A.S.); (H.J.)
| | - Hyunsook Jung
- 4th R&D Institute, Agency for Defense Development, 6th Directorate, Daejeon 34186, Korea; (D.K.); (S.J.); (J.A.S.); (H.J.)
| | - Keunhong Jeong
- Department of Chemistry, Korea Military Academy, Seoul 01805, Korea;
| | - Sangmin Lee
- School of Mechanical Engineering, Chung-Ang University, Seoul 06911, Korea;
- Correspondence: (Y.J.); (S.L.); Tel.: +82-42-821-2203 (Y.J.); +82-2-820-5071 (S.L.)
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19
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Saraswat V, Jacobberger RM, Arnold MS. Materials Science Challenges to Graphene Nanoribbon Electronics. ACS NANO 2021; 15:3674-3708. [PMID: 33656860 DOI: 10.1021/acsnano.0c07835] [Citation(s) in RCA: 43] [Impact Index Per Article: 14.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Graphene nanoribbons (GNRs) have recently emerged as promising candidates for channel materials in future nanoelectronic devices due to their exceptional electronic, thermal, and mechanical properties and chemical inertness. However, the adoption of GNRs in commercial technologies is currently hampered by materials science and integration challenges pertaining to synthesis and devices. In this Review, we present an overview of the current status of challenges, recent breakthroughs toward overcoming these challenges, and possible future directions for the field of GNR electronics. We motivate the need for exploration of scalable synthetic techniques that yield atomically precise, placed, registered, and oriented GNRs on CMOS-compatible substrates and stimulate ideas for contact and dielectric engineering to realize experimental performance close to theoretically predicted metrics. We also briefly discuss unconventional device architectures that could be experimentally investigated to harness the maximum potential of GNRs in future spintronic and quantum information technologies.
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Affiliation(s)
- Vivek Saraswat
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Robert M Jacobberger
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Michael S Arnold
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
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20
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Kim G, Yu Y, Lim H, Jeong B, Lee J, Baik J, Mun BS, Kim KJ. AP-XPS beamline, a platform for operando science at Pohang Accelerator Laboratory. JOURNAL OF SYNCHROTRON RADIATION 2020; 27:507-514. [PMID: 32153292 PMCID: PMC7064101 DOI: 10.1107/s160057751901676x] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/11/2019] [Accepted: 12/15/2019] [Indexed: 06/10/2023]
Abstract
Beamline 8A (BL 8A) is an undulator-based soft X-ray beamline at Pohang Accelerator Laboratory. This beamline is aimed at high-resolution ambient-pressure X-ray photoelectron spectroscopy (AP-XPS), soft X-ray absorption spectroscopy (soft-XAS) and scanning photoemission microscopy (SPEM) experiments. BL 8A has two branches, 8A1 SPEM and 8A2 AP-XPS, that share a plane undulator, the first mirror (M1) and the monochromator. The photon beam is switched between the two branches by changing the refocusing mirrors after the monochromator. The acceptance angle of M1 is kept glancing at 1.2°, and Pt is coated onto the mirrors to achieve high reflectance, which ensures a wide photon energy range (100-2000 eV) with high resolution at a photon flux of ∼1013 photons s-1. In this article, the main properties and performance of the beamline are reported, together with selected experiments performed on the new beamline and experimental system.
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Affiliation(s)
- Geonhwa Kim
- Department of Physics and Photon Science, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
| | - Youngseok Yu
- Department of Physics and Photon Science, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
| | - Hojoon Lim
- Department of Physics and Photon Science, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
| | - Beomgyun Jeong
- Advanced Nano-Surface Research Group, Korea Basic Science Institute, Daejeon 34133, Republic of Korea
| | - Jouhahn Lee
- Advanced Nano-Surface Research Group, Korea Basic Science Institute, Daejeon 34133, Republic of Korea
| | - Jaeyoon Baik
- Beamline Research Division, Pohang Accelerator Laboratory, Pohang 37674, Republic of Korea
| | - Bongjin Simon Mun
- Department of Physics and Photon Science, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
| | - Ki-jeong Kim
- Beamline Research Division, Pohang Accelerator Laboratory, Pohang 37674, Republic of Korea
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21
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Lim JY, Jang HS, Yoo HJ, Kim SI, Whang D. Pattern Pick and Place Method for Twisted Bi- and Multi-Layer Graphene. MATERIALS 2019; 12:ma12223740. [PMID: 31766213 PMCID: PMC6888300 DOI: 10.3390/ma12223740] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/13/2019] [Revised: 11/06/2019] [Accepted: 11/11/2019] [Indexed: 11/29/2022]
Abstract
Twisted bi-layer graphene (tBLG) has attracted much attention because of its unique band structure and properties. The properties of tBLG vary with small differences in the interlayer twist angle, but it is difficult to accurately adjust the interlayer twist angle of tBLG with the conventional fabrication method. In this study, we introduce a facile tBLG fabrication method that directly picks up a single-crystalline graphene layer from a growth substrate and places it on another graphene layer with a pre-designed twist angle. Using this approach, we stacked single-crystalline graphene layers with controlled twist angles and thus fabricated tBLG and twisted multi-layer graphene (tMLG). The structural, optical and electrical properties depending on the twist angle and number of layers, were investigated using transmission electron microscopy (TEM), micro–Raman spectroscopy, and gate-dependent sheet resistance measurements. The obtained results show that the pick and place approach enables the direct dry transfer of the top graphene layer on the as-grown graphene to fabricate uniform tBLG and tMLG with minimal interlayer contamination and pre-defined twist angles.
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Affiliation(s)
- Jae-Young Lim
- SKKU Advanced Institute of Nanotechnology (SAINT) and School of Advanced Materials Science and Engineering Sungkyunkwan University (SSKU), 2066, Seobu-Ro, Jangan-Gu, Suwon-Si, Gyeonggi-Do 16419, Korea; (J.-Y.L.); (H.-S.J.); (H.-J.Y.)
| | - Hyeon-Sik Jang
- SKKU Advanced Institute of Nanotechnology (SAINT) and School of Advanced Materials Science and Engineering Sungkyunkwan University (SSKU), 2066, Seobu-Ro, Jangan-Gu, Suwon-Si, Gyeonggi-Do 16419, Korea; (J.-Y.L.); (H.-S.J.); (H.-J.Y.)
| | - Hyun-Jae Yoo
- SKKU Advanced Institute of Nanotechnology (SAINT) and School of Advanced Materials Science and Engineering Sungkyunkwan University (SSKU), 2066, Seobu-Ro, Jangan-Gu, Suwon-Si, Gyeonggi-Do 16419, Korea; (J.-Y.L.); (H.-S.J.); (H.-J.Y.)
| | - Seung-il Kim
- Department of Energy Systems Research and Department of Materials Science and Engineering Ajou University, 2016, World cup-Ro, Yeongtong-Gu, Suwon-Si, Gyeonggi-Do 16499, Korea;
| | - Dongmok Whang
- SKKU Advanced Institute of Nanotechnology (SAINT) and School of Advanced Materials Science and Engineering Sungkyunkwan University (SSKU), 2066, Seobu-Ro, Jangan-Gu, Suwon-Si, Gyeonggi-Do 16419, Korea; (J.-Y.L.); (H.-S.J.); (H.-J.Y.)
- Correspondence: ; Tel.: +82-31-290-7399
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Zhang X, Wu Z, Zheng H, Ren Q, Zou Z, Mei L, Zhang Z, Xia Y, Lin CT, Zhao P, Wang H. High-quality graphene transfer via directional etching of metal substrates. NANOSCALE 2019; 11:16001-16006. [PMID: 31424468 DOI: 10.1039/c9nr05315h] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Large-scale applications of graphene require its high-efficiency transfer from growth metal substrates to any other substrates of interest. The wrinkles and folds generated during the transfer process of graphene by the well-known poly(methyl methacrylate) (PMMA)-assisted technique is a critical issue. Here, we report an improvement of this method by applying a directional etching process for the removal of the growth Cu substrates, using a pair of electrodes inserted into the etchant with a constant current to form an electrochemical system. The controlled redox reactions between the Cu and the solution environment result in the etching of Cu in a part-by-part manner strictly from one end to the other. The consistency of the Cu etching direction can avoid the formation of an easily destroyable Cu structure and release the stress concentration that is usually generated during the random etching process, and finally yield significantly improved quality of the transferred graphene film with a lowered density of wrinkles, cracks/folds, adlayers, reduced root-mean-square of surface roughness, and increased performance in sheet resistance and carrier mobility.
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Affiliation(s)
- Xuewei Zhang
- Center for X-Mechanics and Institute of Applied Mechanics, Zhejiang University, Hangzhou 310012, P. R. China.
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