1
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Chai Y, Liang Y, Xiao C, Wang Y, Li B, Jiang D, Pal P, Tang Y, Chen H, Zhang Y, Bai H, Xu T, Jiang W, Skowroński W, Zhang Q, Gu L, Ma J, Yu P, Tang J, Lin YH, Yi D, Ralph DC, Eom CB, Wu H, Nan T. Voltage control of multiferroic magnon torque for reconfigurable logic-in-memory. Nat Commun 2024; 15:5975. [PMID: 39013854 PMCID: PMC11252438 DOI: 10.1038/s41467-024-50372-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/07/2024] [Accepted: 07/09/2024] [Indexed: 07/18/2024] Open
Abstract
Magnons, bosonic quasiparticles carrying angular momentum, can flow through insulators for information transmission with minimal power dissipation. However, it remains challenging to develop a magnon-based logic due to the lack of efficient electrical manipulation of magnon transport. Here we show the electric excitation and control of multiferroic magnon modes in a spin-source/multiferroic/ferromagnet structure. We demonstrate that the ferroelectric polarization can electrically modulate the magnon-mediated spin-orbit torque by controlling the non-collinear antiferromagnetic structure in multiferroic bismuth ferrite thin films with coupled antiferromagnetic and ferroelectric orders. In this multiferroic magnon torque device, magnon information is encoded to ferromagnetic bits by the magnon-mediated spin torque. By manipulating the two coupled non-volatile state variables-ferroelectric polarization and magnetization-we further present reconfigurable logic operations in a single device. Our findings highlight the potential of multiferroics for controlling magnon information transport and offer a pathway towards room-temperature voltage-controlled, low-power, scalable magnonics for in-memory computing.
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Affiliation(s)
- Yahong Chai
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China
| | - Yuhan Liang
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China
- School of Materials Science and Engineering, Tsinghua University, Beijing, China
| | - Cancheng Xiao
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China
| | - Yue Wang
- School of Materials Science and Engineering, Tsinghua University, Beijing, China
| | - Bo Li
- Institute for Advanced Study, Tsinghua University, Beijing, China
| | - Dingsong Jiang
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China
| | - Pratap Pal
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, USA
| | - Yongjian Tang
- Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY, USA
| | - Hetian Chen
- School of Materials Science and Engineering, Tsinghua University, Beijing, China
| | - Yuejie Zhang
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China
| | - Hao Bai
- Department of Physics, Tsinghua University, Beijing, China
| | - Teng Xu
- Department of Physics, Tsinghua University, Beijing, China
| | - Wanjun Jiang
- Department of Physics, Tsinghua University, Beijing, China
| | - Witold Skowroński
- Institute of Electronics, AGH University of Science and Technology, Kraków, Poland
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Lin Gu
- School of Materials Science and Engineering, Tsinghua University, Beijing, China
| | - Jing Ma
- School of Materials Science and Engineering, Tsinghua University, Beijing, China
| | - Pu Yu
- Department of Physics, Tsinghua University, Beijing, China
| | - Jianshi Tang
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China
| | - Yuan-Hua Lin
- School of Materials Science and Engineering, Tsinghua University, Beijing, China.
| | - Di Yi
- School of Materials Science and Engineering, Tsinghua University, Beijing, China.
| | - Daniel C Ralph
- Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, USA
| | - Chang-Beom Eom
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, USA
| | - Huaqiang Wu
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China
| | - Tianxiang Nan
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, China.
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2
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Jo Y, Kim Y, Kim S, Ryoo E, Noh G, Han GJ, Lee JH, Cho WJ, Lee GH, Choi SY, Lee D. Field-Free Spin-Orbit Torque Magnetization Switching in a Single-Phase Ferromagnetic and Spin Hall Oxide. NANO LETTERS 2024; 24:7100-7107. [PMID: 38810235 DOI: 10.1021/acs.nanolett.4c01788] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2024]
Abstract
Current-induced spin-orbit torque (SOT) offers substantial promise for the development of low-power, nonvolatile magnetic memory. Recently, a single-phase material concurrently exhibiting magnetism and the spin Hall effect has emerged as a scientifically and technologically interesting platform for realizing efficient and compact SOT systems. Here, we demonstrate external-magnetic-field-free switching of perpendicular magnetization in a single-phase ferromagnetic and spin Hall oxide SrRuO3. We delicately altered the local lattices of the top and bottom surface layers of SrRuO3, while retaining a quasi-homogeneous, single-crystalline nature of the SrRuO3 bulk. This leads to unbalanced spin Hall effects between the top and bottom layers, enabling net SOT performance within single-layer ferromagnetic SrRuO3. Notably, our SrRuO3 exhibits the highest SOT efficiency and lowest power consumption among all known single-layer systems under field-free conditions. Our method of artificially manipulating the local atomic structures will pave the way for advances in spin-orbitronics and the exploration of new SOT materials.
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Affiliation(s)
- Yongjoo Jo
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea
| | - Younji Kim
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea
| | - Sanghyeon Kim
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea
| | - Eunjo Ryoo
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea
| | - Gahee Noh
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea
| | - Gi-Jeong Han
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea
| | - Ji Hye Lee
- Center for Correlated Electron Systems, Institute of Basic Science, Seoul 08826, Korea
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea
- Advanced Institute of Convergence Technology, Seoul National University, Suwon 16229, Korea
| | - Won Joon Cho
- Material Research Center, Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Suwon 16678, Korea
| | - Gil-Ho Lee
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea
| | - Si-Young Choi
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea
- Center for van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang 37673, Korea
- Department of Semiconductor Engineering, Pohang University of Science and Technology, Pohang 37673, Korea
| | - Daesu Lee
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Korea
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3
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Wang Q, Gu Y, Chen C, Pan F, Song C. Oxide Spintronics as a Knot of Physics and Chemistry: Recent Progress and Opportunities. J Phys Chem Lett 2022; 13:10065-10075. [PMID: 36264651 DOI: 10.1021/acs.jpclett.2c02634] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Transition-metal oxides (TMOs) constitute a key material family in spintronics because of mutually coupled degrees of freedom and tunable magneto-ionic properties. In this Perspective, we consider oxide spintronics as a knot of physics and chemistry and mainly discuss two current hot topics: spin-charge interconversion and magneto-ionics. First, spin-charge interconversion is focused on oxide films and heterostructures including 4d/5d heavy metal oxides (e.g., SrIrO3) and two-dimensional electron gases. Based on spin-charge interconversion, charge currents can be transformed to spin currents and generate spin-orbit torque in oxide/metal and all-oxide heterostructures. Additionally, the voltage control of magnetism in TMOs by the magneto-ionic pathway has rapidly accelerated during the past few years due to the versatile advantages of effective control, nonvolatile nature, low power cost, etc. Typical magneto-ionic oxide systems and corresponding physicochemical mechanisms will be discussed. Finally, further developments of oxide spintronics are envisioned, including material discovery, physics exploration, device design, and manipulation methods.
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Affiliation(s)
- Qian Wang
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing100084, China
| | - Youdi Gu
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing100084, China
| | - Chong Chen
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing100084, China
| | - Feng Pan
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing100084, China
| | - Cheng Song
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing100084, China
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4
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Ramachandran R, Chen TW, Veerakumar P, Anushya G, Chen SM, Kannan R, Mariyappan V, Chitra S, Ponmurugaraj N, Boominathan M. Recent development and challenges in fuel cells and water electrolyzer reactions: an overview. RSC Adv 2022; 12:28227-28244. [PMID: 36320254 PMCID: PMC9531000 DOI: 10.1039/d2ra04853a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/04/2022] [Accepted: 09/01/2022] [Indexed: 11/07/2022] Open
Abstract
Water electrolysis is the most promising method for the production of large scalable hydrogen (H2), which can fulfill the global energy demand of modern society. H2-based fuel cell transportation has been operating with zero greenhouse emission to improve both indoor and outdoor air quality, in addition to the development of economically viable sustainable green energy for widespread electrochemical applications. Many countries have been eagerly focusing on the development of renewable as well as H2-based energy storage infrastructure to fulfill their growing energy demands and sustainable goals. This review article mainly discusses the development of different kinds of fuel cell electrocatalysts, and their application in H2 production through various processes (chemical, refining, and electrochemical). The fuel cell parameters such as redox properties, cost-effectiveness, ecofriendlyness, conductivity, and better electrode stability have also been highlighted. In particular, a detailed discussion has been carried out with sufficient insights into the sustainable development of future green energy economy.
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Affiliation(s)
- Rasu Ramachandran
- Department of Chemistry, The Madura College (Madurai Kamaraj University) Vidhya Nagar, T.P.K. Road Madurai 625011 India
| | - Tse-Wei Chen
- Department of Materials, Imperial College London London SW7 2AZ UK
| | | | - Ganesan Anushya
- Department of Physics, St. Joseph College of Engineering Sriperumbudur Chennai 602117 India
| | - Shen-Ming Chen
- Electroanalysis and Bio-electrochemistry Laboratory, Department of Chemical Engineering and Biotechnology, National Taipei University of Technology Taipei 106 Taiwan
| | - Ramanjam Kannan
- Department of Chemistry, Sri KumaraguruparaSwamigal Arts College Srivaikuntam Thoothukudi-628619 India
| | - Vinitha Mariyappan
- Electroanalysis and Bio-electrochemistry Laboratory, Department of Chemical Engineering and Biotechnology, National Taipei University of Technology Taipei 106 Taiwan
| | - Selvam Chitra
- Department of Chemistry, Alagappa Government Arts College Karaikudi 630003 India
| | | | - Muthusamy Boominathan
- Department of Chemistry, The Madura College (Madurai Kamaraj University) Vidhya Nagar, T.P.K. Road Madurai 625011 India
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5
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Xie Q, Lin W, Liang J, Zhou H, Waqar M, Lin M, Teo SL, Chen H, Lu X, Shu X, Liu L, Chen S, Zhou C, Chai J, Yang P, Loh KP, Wang J, Jiang W, Manchon A, Yang H, Chen J. Rashba-Edelstein Effect in the h-BN Van Der Waals Interface for Magnetization Switching. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2109449. [PMID: 35751473 DOI: 10.1002/adma.202109449] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/21/2021] [Revised: 06/20/2022] [Indexed: 06/15/2023]
Abstract
Van der Waals materials are attracting great attention in the field of spintronics due to their novel physical properties. For example, they are utilized as spin-current generating materials in spin-orbit torque (SOT) devices, which offers an electrical way to control the magnetic state and is promising for future low-power electronics. However, SOTs have mostly been demonstrated in vdW materials with strong spin-orbit coupling (SOC). Here, the observation of a current-induced SOT in the h-BN/SrRuO3 bilayer structure is reported, where the vdW material (h-BN) is an insulator with negligible SOC. Importantly, this SOT is strong enough to induce the switching of the perpendicular magnetization in SrRuO3 . First-principles calculations suggest a giant Rashba effect at the interface between vdW material and SrRuO3 (110)pc thin film, which leads to the observed SOT based on a simplified tight-binding model. Furthermore, it is demonstrated that the current-induced magnetization switching can be modulated by the electric field. This study paves the way for exploring the current-induced SOT and magnetization switching by integrating vdW materials with ferromagnets.
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Affiliation(s)
- Qidong Xie
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Weinan Lin
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
- Department of physics, Xiamen University, Xiamen, 361005, China
| | - Jinghua Liang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Hengan Zhou
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, China
| | - Moaz Waqar
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
- NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, Singapore, 119077, Singapore
| | - Ming Lin
- Institute of Materials Research and Engineering, Agency for Science, Technology, and Research (A*STAR), 2 Fusionopolis Way, Innovis, #08-03, Singapore, 138634, Singapore
| | - Siew Lang Teo
- Institute of Materials Research and Engineering, Agency for Science, Technology, and Research (A*STAR), 2 Fusionopolis Way, Innovis, #08-03, Singapore, 138634, Singapore
| | - Hao Chen
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
| | - Xiufang Lu
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
| | - Xinyu Shu
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Liang Liu
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Shaohai Chen
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Chenghang Zhou
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Jianwei Chai
- Institute of Materials Research and Engineering, Agency for Science, Technology, and Research (A*STAR), 2 Fusionopolis Way, Innovis, #08-03, Singapore, 138634, Singapore
| | - Ping Yang
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
- Singapore Synchrotron Light Source (SSLS), National University of Singapore, 5 Research Link, Singapore, 117603, Singapore
| | - Kian Ping Loh
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
| | - John Wang
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Wanjun Jiang
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, China
| | | | - Hongxin Yang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jingsheng Chen
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
- Institute of Materials Research and Engineering, Agency for Science, Technology, and Research (A*STAR), 2 Fusionopolis Way, Innovis, #08-03, Singapore, 138634, Singapore
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6
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Yamanouchi M, Araki Y, Sakai T, Uemura T, Ohta H, Ieda J. Observation of topological Hall torque exerted on a domain wall in the ferromagnetic oxide SrRuO 3. SCIENCE ADVANCES 2022; 8:eabl6192. [PMID: 35427155 PMCID: PMC9012465 DOI: 10.1126/sciadv.abl6192] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/25/2021] [Accepted: 02/25/2022] [Indexed: 06/14/2023]
Abstract
In a ferromagnetic Weyl metal SrRuO3, a large effective magnetic field Heff exerted on a magnetic domain wall (DW) by current has been reported. We show that the ratio of Heff to current density exhibits nonmonotonic temperature dependence and surpasses those of conventional spin-transfer torques and spin-orbit torques. This enhancement is described well by topological Hall torque (THT), which is exerted on a DW by Weyl electrons emerging around Weyl points when an electric field is applied across the DW. The ratio of the Heff arising from the THT to current density is over one order of magnitude higher than that originating from spin-transfer torques and spin-orbit torques reported in metallic systems, showing that the THT may provide a better way for energy-efficient manipulation of magnetization in spintronics devices.
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Affiliation(s)
- Michihiko Yamanouchi
- Division of Electronics for Informatics, Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814, Japan
| | - Yasufumi Araki
- Advanced Science Research Center, Japan Atomic Energy Agency, Tokai, Ibaraki 319-1195, Japan
| | - Takaki Sakai
- Division of Electronics for Informatics, Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814, Japan
| | - Tetsuya Uemura
- Division of Electronics for Informatics, Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814, Japan
| | - Hiromichi Ohta
- Research Institute for Electronic Science, Hokkaido University, N20W10, Kita-ku, Sapporo 001-0020, Japan
| | - Jun’ichi Ieda
- Advanced Science Research Center, Japan Atomic Energy Agency, Tokai, Ibaraki 319-1195, Japan
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7
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Zhou J, Shu X, Lin W, Shao DF, Chen S, Liu L, Yang P, Tsymbal EY, Chen J. Modulation of Spin-Orbit Torque from SrRuO 3 by Epitaxial-Strain-Induced Octahedral Rotation. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2007114. [PMID: 34145647 DOI: 10.1002/adma.202007114] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/19/2020] [Revised: 03/30/2021] [Indexed: 06/12/2023]
Abstract
Spin-orbit torque (SOT), which arises from the spin-orbit coupling of conduction electrons, is believed to be the key route for developing low-power, high-speed, and nonvolatile memory devices. Despite the theoretical prediction of pronounced Berry phase curvatures in certain transition-metal perovskite oxides, which lead to considerable intrinsic spin Hall conductivity, SOT from this class of materials has rarely been reported until recently. Here, the SOT generated by epitaxial SrRuO3 of three different crystal structures is systematically studied. The results of both spin-torque ferromagnetic resonance and in-plane harmonic Hall voltage measurements concurrently reveal that the intrinsic SOT efficiency of SrRuO3 decreases when the epitaxial strain changes from tensile to compressive. The X-ray diffraction data demonstrate a strong correlation between the magnitude of SOT and octahedral rotation around the in-plane axes of SrRuO3 , consistent with the theoretical prediction. This work offers new possibilities of tuning SOT with crystal structures and novel opportunities of integrating the unique properties of perovskite oxides with spintronic functionalities.
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Affiliation(s)
- Jing Zhou
- Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore, 117575, Singapore
| | - Xinyu Shu
- Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore, 117575, Singapore
| | - Weinan Lin
- Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore, 117575, Singapore
| | - Ding Fu Shao
- Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE, 68588, USA
| | - Shaohai Chen
- Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore, 117575, Singapore
| | - Liang Liu
- Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore, 117575, Singapore
| | - Ping Yang
- Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore, 117575, Singapore
- Singapore Synchrotron Light Source (SSLS), National University of Singapore, 5 Research Link, Singapore, 117603, Singapore
| | - Evgeny Y Tsymbal
- Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, NE, 68588, USA
| | - Jingsheng Chen
- Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore, 117575, Singapore
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8
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Huang X, Sayed S, Mittelstaedt J, Susarla S, Karimeddiny S, Caretta L, Zhang H, Stoica VA, Gosavi T, Mahfouzi F, Sun Q, Ercius P, Kioussis N, Salahuddin S, Ralph DC, Ramesh R. Novel Spin-Orbit Torque Generation at Room Temperature in an All-Oxide Epitaxial La 0.7 Sr 0.3 MnO 3 /SrIrO 3 System. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2008269. [PMID: 33960025 DOI: 10.1002/adma.202008269] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/07/2020] [Revised: 02/27/2021] [Indexed: 06/12/2023]
Abstract
Spin-orbit torques (SOTs) that arise from materials with large spin-orbit coupling offer a new pathway for energy-efficient and fast magnetic information storage. SOTs in conventional heavy metals and topological insulators are explored extensively, while 5d transition metal oxides, which also host ions with strong spin-orbit coupling, are a relatively new territory in the field of spintronics. An all-oxide, SrTiO3 (STO)//La0.7 Sr0.3 MnO3 (LSMO)/SrIrO3 (SIO) heterostructure with lattice-matched crystal structure is synthesized, exhibiting an epitaxial and atomically sharp interface between the ferromagnetic LSMO and the high spin-orbit-coupled metal SIO. Spin-torque ferromagnetic resonance (ST-FMR) is used to probe the effective magnetization and the SOT efficiency in LSMO/SIO heterostructures grown on STO substrates. Remarkably, epitaxial LSMO/SIO exhibits a large SOT efficiency, ξ|| = 1, while retaining a reasonably low shunting factor and increasing the effective magnetization of LSMO by ≈50%. The findings highlight the significance of epitaxy as a powerful tool to achieve a high SOT efficiency, explore the rich physics at the epitaxial interface, and open up a new pathway for designing next-generation energy-efficient spintronic devices.
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Affiliation(s)
- Xiaoxi Huang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Shehrin Sayed
- Department of Electrical Engineering and Computer Science, University of California, Berkeley, CA, 94720, USA
| | | | - Sandhya Susarla
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Saba Karimeddiny
- Department of Physics, Cornell University, Ithaca, NY, 14853, USA
| | - Lucas Caretta
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Hongrui Zhang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Vladimir A Stoica
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, 16802, USA
| | - Tanay Gosavi
- Components Research, Intel Corporation, Hillsboro, OR, 97124, USA
| | - Farzad Mahfouzi
- Department of Physics, California State University Northridge, Northridge, CA, 91330, USA
| | - Qilong Sun
- Department of Physics, California State University Northridge, Northridge, CA, 91330, USA
| | - Peter Ercius
- National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Nicholas Kioussis
- Department of Physics, California State University Northridge, Northridge, CA, 91330, USA
| | - Sayeef Salahuddin
- Department of Electrical Engineering and Computer Science, University of California, Berkeley, CA, 94720, USA
| | - Daniel C Ralph
- Department of Physics, Cornell University, Ithaca, NY, 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, 14853, USA
| | - Ramamoorthy Ramesh
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Department of Physics, University of California, Berkeley, CA, 94720, USA
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9
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Varotto S, Cosset-Chéneau M, Grèzes C, Fu Y, Warin P, Brenac A, Jacquot JF, Gambarelli S, Rinaldi C, Baltz V, Attané JP, Vila L, Noël P. Independence of the Inverse Spin Hall Effect with the Magnetic Phase in Thin NiCu Films. PHYSICAL REVIEW LETTERS 2020; 125:267204. [PMID: 33449788 DOI: 10.1103/physrevlett.125.267204] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/15/2020] [Revised: 09/08/2020] [Accepted: 11/20/2020] [Indexed: 06/12/2023]
Abstract
Large spin Hall angles have been observed in 3d ferromagnets, but their origin, and especially their link with the ferromagnetic order, remain unclear. Here, we investigate the evolution of the inverse spin Hall effect of Ni_{60}Cu_{40} and Ni_{50}Cu_{50} across their Curie temperatures using spin-pumping experiments. We show that the inverse spin Hall effect in these samples is comparable to that of platinum, and that it is insensitive to the magnetic order. These results point toward a Heisenberg localized model of the transition and suggest that the large spin Hall effects in 3d ferromagnets can be independent of the magnetic phase.
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Affiliation(s)
- Sara Varotto
- Université Grenoble Alpes, CEA, CNRS, Grenoble INP, SPINTEC, F-38000 Grenoble, France
- Department of Physics, Politecnico di Milano, 20133 Milano, Italy
| | - Maxen Cosset-Chéneau
- Université Grenoble Alpes, CEA, CNRS, Grenoble INP, SPINTEC, F-38000 Grenoble, France
| | - Cécile Grèzes
- Université Grenoble Alpes, CEA, CNRS, Grenoble INP, SPINTEC, F-38000 Grenoble, France
| | - Yu Fu
- Université Grenoble Alpes, CEA, CNRS, Grenoble INP, SPINTEC, F-38000 Grenoble, France
| | - Patrick Warin
- Université Grenoble Alpes, CEA, CNRS, Grenoble INP, SPINTEC, F-38000 Grenoble, France
| | - Ariel Brenac
- Université Grenoble Alpes, CEA, CNRS, Grenoble INP, SPINTEC, F-38000 Grenoble, France
| | | | - Serge Gambarelli
- Université Grenoble Alpes, CEA, SYMMES, F-38000 Grenoble, France
| | | | - Vincent Baltz
- Université Grenoble Alpes, CEA, CNRS, Grenoble INP, SPINTEC, F-38000 Grenoble, France
| | - Jean-Philippe Attané
- Université Grenoble Alpes, CEA, CNRS, Grenoble INP, SPINTEC, F-38000 Grenoble, France
| | - Laurent Vila
- Université Grenoble Alpes, CEA, CNRS, Grenoble INP, SPINTEC, F-38000 Grenoble, France
| | - Paul Noël
- Université Grenoble Alpes, CEA, CNRS, Grenoble INP, SPINTEC, F-38000 Grenoble, France
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10
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Bose A, Nelson JN, Zhang XS, Jadaun P, Jain R, Schlom DG, Ralph DC, Muller DA, Shen KM, Buhrman RA. Effects of Anisotropic Strain on Spin-Orbit Torque Produced by the Dirac Nodal Line Semimetal IrO 2. ACS APPLIED MATERIALS & INTERFACES 2020; 12:55411-55416. [PMID: 33232102 DOI: 10.1021/acsami.0c16485] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We report spin-torque ferromagnetic resonance studies of the efficiency of the damping-like (ξDL) spin-orbit torque exerted on an adjacent ferromagnet film by current flowing in epitaxial (001) and (110) IrO2 thin films. IrO2 possesses Dirac nodal lines (DNLs) in the band structure that are gapped by spin-orbit coupling, which could enable a very high spin Hall conductivity, σSH. We find that the (001) films do exhibit exceptionally high ξDL ranging from 0.45 at 293 K to 0.65 at 30 K, which sets the lower bounds of σSH to be 1.9 × 105 and 3.75 × 105 Ω-1 m-1, respectively, 10 times higher and of opposite sign than the theoretical prediction. Furthermore, ξDL and σSH are substantially reduced in anisotropically strained (110) films. We suggest that this high sensitivity to anisotropic strain is because of changes in contributions to σSH near the DNLs.
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Affiliation(s)
- Arnab Bose
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, United States
| | - Jocienne N Nelson
- Department of Physics, Cornell University, Ithaca, New York 14853, United States
| | - Xiyue S Zhang
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, United States
| | - Priyamvada Jadaun
- Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712, United States
| | - Rakshit Jain
- Department of Physics, Cornell University, Ithaca, New York 14853, United States
| | - Darrell G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, United States
| | - Daniel C Ralph
- Department of Physics, Cornell University, Ithaca, New York 14853, United States
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, United States
| | - David A Muller
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, United States
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, United States
| | - Kyle M Shen
- Department of Physics, Cornell University, Ithaca, New York 14853, United States
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, United States
| | - Robert A Buhrman
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, United States
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11
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Huang H, Lee SJ, Kim B, Sohn B, Kim C, Kao CC, Lee JS. Detection of the Chiral Spin Structure in Ferromagnetic SrRuO 3 Thin Film. ACS APPLIED MATERIALS & INTERFACES 2020; 12:37757-37763. [PMID: 32696641 DOI: 10.1021/acsami.0c10545] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
SrRuO3 (SRO) thin films and their heterostructure have attracted much attention because of the recently demonstrated fascinating properties, such as topological Hall effect and skyrmions. Critical to the understanding of those SRO properties is the study of the spin configuration. Here, we conduct resonant soft X-ray scattering (RSXS) at the oxygen K edge to investigate the spin configuration of a four-unit-cell SRO film that was grown epitaxially on a single-crystal SrTiO3. The RSXS signal under a magnetic field (∼0.4 tesla) clearly shows a magnetic dichroism pattern around the specular reflection. Model calculations on the RSXS signal demonstrate that the magnetic dichroism pattern originates from a Néel-type chiral spin structure in this SRO thin film. We believe that the observed spin structure of the SRO system is a critical piece of information for understanding its intriguing magnetic and transport properties.
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Affiliation(s)
- Hai Huang
- Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Sang-Jun Lee
- Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Bongju Kim
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, South Korea
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul 08826, South Korea
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, South Korea
| | - Byungmin Sohn
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, South Korea
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul 08826, South Korea
| | - Changyoung Kim
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, South Korea
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul 08826, South Korea
| | - Chi-Chang Kao
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Jun-Sik Lee
- Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
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