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Ye H, Kwon HJ, Ryu KY, Wu K, Park J, Babita G, Kim I, Yang C, Kong H, Kim SH. Surface engineering of high- k polymeric dielectric layers with a fluorinated organic crosslinker for use in flexible-platform electronics. NANOSCALE ADVANCES 2024; 6:4119-4127. [PMID: 39114159 PMCID: PMC11302166 DOI: 10.1039/d3na01018j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/19/2023] [Accepted: 05/20/2024] [Indexed: 08/10/2024]
Abstract
High-k polymeric layers were prepared by combining various functional groups and were applied as gate dielectrics for practical organic field-effect transistors (OFETs). Crosslinking of the polymeric layers through UV-assisted organic azide fluorine-based crosslinkers induced dramatic improvements in the electrical performance of the OFET, such as field-effect mobility and bias-stress stability. Our synthesis and manufacturing method can be a useful technique for ensuring device operation stability and electrical property enhancement. With this analysis, we further applied our polymer-dielectric OFETs to flexible-platform-based electronic components, including unit OFETs and simple logic devices (NOT, NAND, and NOR gates). The outcomes of this research and development suggest a suitable method for the low-cost mass production of large-area flexible and printable devices, using a printing-based approach to replace current processes.
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Affiliation(s)
- Heqing Ye
- School of Flexible Electronics (SoFE), Henan Institute of Flexible Electronics (HIFE), Henan University 379 Mingli Road Zhengzhou 450046 China
- School of Chemical Engineering, Konkuk University Seoul 05029 Korea
| | - Hyeok-Jin Kwon
- Department of Industrial Chemistry, Pukyong National University Busan 48513 Republic of Korea
| | - Ka Yeon Ryu
- Department of Chemistry, Research Institute of Nature Science, Gyeongsang National University Jinju 52828 Republic of Korea
| | - Kaibin Wu
- School of Chemical Engineering, Konkuk University Seoul 05029 Korea
| | - Jeongwan Park
- Department of Chemistry, Research Institute of Nature Science, Gyeongsang National University Jinju 52828 Republic of Korea
| | - Giri Babita
- Department of Chemistry, Research Institute of Nature Science, Gyeongsang National University Jinju 52828 Republic of Korea
| | - Inae Kim
- Advanced Nano-Surface & Wearable Electronics Research Laboratory, Heat and Surface Technology R&D Department, Korea Institute of Industrial Technology Incheon 21999 Korea
| | - Chanwoo Yang
- Advanced Nano-Surface & Wearable Electronics Research Laboratory, Heat and Surface Technology R&D Department, Korea Institute of Industrial Technology Incheon 21999 Korea
| | - Hoyoul Kong
- Department of Chemistry, Research Institute of Nature Science, Gyeongsang National University Jinju 52828 Republic of Korea
| | - Se Hyun Kim
- School of Chemical Engineering, Konkuk University Seoul 05029 Korea
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2
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Tan ZS, Jamal Z, Teo DWY, Ko HC, Seah ZL, Phua HY, Ho PKH, Png RQ, Chua LL. Optimization of fluorinated phenyl azides as universal photocrosslinkers for semiconducting polymers. Nat Commun 2024; 15:6354. [PMID: 39069548 PMCID: PMC11284223 DOI: 10.1038/s41467-024-50257-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/05/2023] [Accepted: 07/03/2024] [Indexed: 07/30/2024] Open
Abstract
Fluorinated phenyl azides (FPA) enable photo-structuring of π-conjugated polymer films for electronic device applications. Despite their potential, FPAs have faced limitations regarding their crosslinking efficiency, and more importantly, their impact on critical semiconductor properties, such as charge-carrier mobility. Here, we report that azide photolysis and photocrosslinking can achieve unity quantum efficiencies for specific FPAs. This suggests preferential nitrene insertion into unactivated C‒H bonds over benzazirine and ketenimine reactions, which we attribute to rapid interconversion between the initially formed hot states. Furthermore, we establish a structure‒activity relationship for carrier mobility quenching. The binding affinity of FPA crosslinker to polymer π-stacks governs its propensity for mobility quenching in both PM6 and PBDB-T used as model conjugated polymers. This binding affinity can be suppressed by FPA ring substitution, but varies in a non-trivial way with π-stack order. Utilizing the optimal FPA, photocrosslinking enables the fabrication of morphology-stabilized, acceptor-infiltrated donor polymer networks (that is, PBDB-T: ITIC and PM6: Y6) for solar cells. Our findings demonstrate the exceptional potential of the FPA photochemistry and offer a promising approach to address the challenges of modelling realistic molecular interactions in complex polymer morphologies, moving beyond the limitations of Flory‒Huggins mean field theory.
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Affiliation(s)
- Zhao-Siu Tan
- Department of Chemistry, National University of Singapore, Lower Kent Ridge Road, S117552, Singapore, Singapore
| | - Zaini Jamal
- Department of Chemistry, National University of Singapore, Lower Kent Ridge Road, S117552, Singapore, Singapore
| | - Desmond W Y Teo
- Department of Chemistry, National University of Singapore, Lower Kent Ridge Road, S117552, Singapore, Singapore
| | - Hor-Cheng Ko
- Department of Chemistry, National University of Singapore, Lower Kent Ridge Road, S117552, Singapore, Singapore
| | - Zong-Long Seah
- Department of Physics, National University of Singapore, Lower Kent Ridge Road, S117550, Singapore, Singapore
| | - Hao-Yu Phua
- Department of Physics, National University of Singapore, Lower Kent Ridge Road, S117550, Singapore, Singapore
| | - Peter K H Ho
- Department of Physics, National University of Singapore, Lower Kent Ridge Road, S117550, Singapore, Singapore
| | - Rui-Qi Png
- Department of Physics, National University of Singapore, Lower Kent Ridge Road, S117550, Singapore, Singapore.
| | - Lay-Lay Chua
- Department of Chemistry, National University of Singapore, Lower Kent Ridge Road, S117552, Singapore, Singapore.
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3
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Yoon TW, Park H, Lee J, Yoo S, Kim YH, Weon BM, Kim J, Kim YY, Kang B. Controlling Fluorination Density of Soluble Polyimide Gate Dielectrics and its Influence on Organic Crystal Growth and Device Operational Stability. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38669100 DOI: 10.1021/acsami.4c01767] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/28/2024]
Abstract
Fluorinated polyimides (PIs) are among the most promising candidates for gate dielectric materials in organic electronic devices because of their solution processability and outstanding chemical, mechanical, and thermal stabilities. Additionally, fluorine (F) substitution improves the electrical properties of PI thin films, such as enhanced dielectric properties and reduced surface trap densities. However, the relationship between the fluorination density of PIs and crystal growth modes of vacuum-deposited conjugated molecules on PI thin films, which is directly related to the lateral charge transport along the PI-organic semiconductor interface, has not been systematically studied. Herein, five different soluble PIs with different F densities were synthesized, and the correlation between fluorination and thin-film properties was systematically investigated. Not only were their dielectric properties modulated, but the growth modes of the organic molecules deposited on the PI thin films also changed with increasing surface F density. This phenomenon was observed by both surface and crystallographic analyses, which resulted in extremely high operational stability of field-effect transistors and the successful fabrication of organic complementary circuits. We believe that the correlation between PI backbone fluorination and its thin-film properties will provide practical insights into the material design based on controlled molecular directed surface assembly on fluorinated polymer dielectrics.
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Affiliation(s)
- Tae Woong Yoon
- SKKU Advanced Institute of Nanotechnology (SAINT) and Department of Nano Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Hyunjin Park
- Chemical Materials Solutions Center, Korea Research Institute of Chemical Technology (KRICT), Daejeon 34114, Republic of Korea
| | - Jaehoon Lee
- SKKU Advanced Institute of Nanotechnology (SAINT) and Department of Nano Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Sungmi Yoo
- Advanced Functional Polymers Center, KRICT, Daejeon 34114, Republic of Korea
| | - Yun Ho Kim
- Advanced Functional Polymers Center, KRICT, Daejeon 34114, Republic of Korea
| | - Byung Mook Weon
- School of Advanced Materials Science and Engineering and SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Junki Kim
- SKKU Advanced Institute of Nanotechnology (SAINT) and Department of Nano Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
- Department of Nano Engineering, SKKU, Suwon 16419, Republic of Korea
| | - Young Yong Kim
- Beamline Division, Pohang Accelerator Laboratory, POSTECH, Pohang 37673, Republic of Korea
| | - Boseok Kang
- SKKU Advanced Institute of Nanotechnology (SAINT) and Department of Nano Science and Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
- Department of Nano Engineering, SKKU, Suwon 16419, Republic of Korea
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Ko TY, Ye H, Murali G, Lee SY, Park YH, Lee J, Lee J, Yun DJ, Gogotsi Y, Kim SJ, Kim SH, Jeong YJ, Park SJ, In I. Functionalized MXene ink enables environmentally stable printed electronics. Nat Commun 2024; 15:3459. [PMID: 38658566 PMCID: PMC11043420 DOI: 10.1038/s41467-024-47700-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/10/2023] [Accepted: 04/08/2024] [Indexed: 04/26/2024] Open
Abstract
Establishing dependable, cost-effective electrical connections is vital for enhancing device performance and shrinking electronic circuits. MXenes, combining excellent electrical conductivity, high breakdown voltage, solution processability, and two-dimensional morphology, are promising candidates for contacts in microelectronics. However, their hydrophilic surfaces, which enable spontaneous environmental degradation and poor dispersion stability in organic solvents, have restricted certain electronic applications. Herein, electrohydrodynamic printing technique is used to fabricate fully solution-processed thin-film transistors with alkylated 3,4-dihydroxy-L-phenylalanine functionalized Ti3C2Tx (AD-MXene) as source, drain, and gate electrodes. The AD-MXene has excellent dispersion stability in ethanol, which is required for electrohydrodynamic printing, and maintains high electrical conductivity. It outperformed conventional vacuum-deposited Au and Al electrodes, providing thin-film transistors with good environmental stability due to its hydrophobicity. Further, thin-film transistors are integrated into logic gates and one-transistor-one-memory cells. This work, unveiling the ligand-functionalized MXenes' potential in printed electrical contacts, promotes environmentally robust MXene-based electronics (MXetronics).
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Affiliation(s)
- Tae Yun Ko
- Materials Architecturing Research Center, Korea Institute of Science and Technology, 5, Hwarang-ro 14-gil, Seongbuk-gu, Seoul, 02792, South Korea
- Convergence Research Center for Solutions to Electromagnetic Interference in Future-mobility, Korea Institute of Science and Technology, 5, Hwarang-ro 14-gil, Seongbuk-gu, Seoul, 02792, South Korea
- Nanoplexus Solutions Ltd, Graphene Engineering Innovation Centre, Masdar Building, Sackville Street, Manchester, M1 3BB, UK
| | - Heqing Ye
- School of Flexible Electronics (SoFE) and Henan Institute of Flexible Electronics (HIFE), Henan University, 379 Mingli Road, Zhengzhou, 450046, China
- School of Chemical Engineering, Konkuk University, Seoul, 05029, South Korea
| | - G Murali
- Department of Polymer Science and Engineering, Chemical Industry Institute, Korea National University of Transportation, Chungju, 27469, South Korea
- Department of IT-Energy Convergence (BK21 FOUR), Korea National University of Transportation, Chungju, 27469, South Korea
| | - Seul-Yi Lee
- Department of Chemistry, Inha University, Inharo 100, Incheon, 22212, South Korea
| | - Young Ho Park
- Department of Polymer Science and Engineering, Chemical Industry Institute, Korea National University of Transportation, Chungju, 27469, South Korea
- Department of IT-Energy Convergence (BK21 FOUR), Korea National University of Transportation, Chungju, 27469, South Korea
| | - Jihoon Lee
- Department of Polymer Science and Engineering, Chemical Industry Institute, Korea National University of Transportation, Chungju, 27469, South Korea
- Department of IT-Energy Convergence (BK21 FOUR), Korea National University of Transportation, Chungju, 27469, South Korea
| | - Juyun Lee
- Materials Architecturing Research Center, Korea Institute of Science and Technology, 5, Hwarang-ro 14-gil, Seongbuk-gu, Seoul, 02792, South Korea
- Convergence Research Center for Solutions to Electromagnetic Interference in Future-mobility, Korea Institute of Science and Technology, 5, Hwarang-ro 14-gil, Seongbuk-gu, Seoul, 02792, South Korea
- Department of Materials Science and Engineering, Korea University, 145, Anam-ro, Seongbuk-gu, Seoul, 02841, South Korea
| | - Dong-Jin Yun
- Analytical Science Laboratory of Samsung Advanced Institute of Technology (SAIT), Suwon, 16678, South Korea
| | - Yury Gogotsi
- Department of Materials Science and Engineering and A. J. Drexel Nanomaterials Institute, Drexel University, Philadelphia, Pennsylvania, 19104, US
| | - Seon Joon Kim
- Materials Architecturing Research Center, Korea Institute of Science and Technology, 5, Hwarang-ro 14-gil, Seongbuk-gu, Seoul, 02792, South Korea.
- Convergence Research Center for Solutions to Electromagnetic Interference in Future-mobility, Korea Institute of Science and Technology, 5, Hwarang-ro 14-gil, Seongbuk-gu, Seoul, 02792, South Korea.
- Division of Nanoscience and Technology, KIST School, University of Science and Technology, 5, Hwarang-ro 14-gil, Seongbuk-gu, Seoul, 02792, South Korea.
| | - Se Hyun Kim
- School of Chemical Engineering, Konkuk University, Seoul, 05029, South Korea.
| | - Yong Jin Jeong
- Department of IT-Energy Convergence (BK21 FOUR), Korea National University of Transportation, Chungju, 27469, South Korea.
- Department of Materials Science and Engineering, Korea National University of Transportation, Chungju, 27469, South Korea.
| | - Soo-Jin Park
- Department of Chemistry, Inha University, Inharo 100, Incheon, 22212, South Korea.
| | - Insik In
- Department of Polymer Science and Engineering, Chemical Industry Institute, Korea National University of Transportation, Chungju, 27469, South Korea.
- Department of IT-Energy Convergence (BK21 FOUR), Korea National University of Transportation, Chungju, 27469, South Korea.
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Katiyar AK, Hoang AT, Xu D, Hong J, Kim BJ, Ji S, Ahn JH. 2D Materials in Flexible Electronics: Recent Advances and Future Prospectives. Chem Rev 2024; 124:318-419. [PMID: 38055207 DOI: 10.1021/acs.chemrev.3c00302] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.
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Affiliation(s)
- Ajit Kumar Katiyar
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Anh Tuan Hoang
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Duo Xu
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Juyeong Hong
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Beom Jin Kim
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Seunghyeon Ji
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
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6
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Perinot A, Scuratti F, Scaccabarozzi AD, Tran K, Salazar-Rios JM, Loi MA, Salvatore G, Fabiano S, Caironi M. Solution-Processed Polymer Dielectric Interlayer for Low-Voltage, Unipolar n-Type Organic Field-Effect Transistors. ACS APPLIED MATERIALS & INTERFACES 2023; 15:56095-56105. [PMID: 37990398 DOI: 10.1021/acsami.3c11285] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/23/2023]
Abstract
The integration of organic electronic circuits into real-life applications compels the fulfillment of a range of requirements, among which the ideal operation at a low voltage with reduced power consumption is paramount. Moreover, these performance factors should be achieved via solution-based fabrication schemes in order to comply with the promise of cost- and energy-efficient manufacturing offered by an organic, printed electronic technology. Here, we propose a solution-based route for the fabrication of low-voltage organic transistors, encompassing ideal device operation at voltages below 5 V and exhibiting n-type unipolarization. This process is widely applicable to a variety of semiconducting and dielectric materials. We achieved this through the use of a photo-cross-linked, low-k dielectric interlayer, which is used to fabricate multilayer dielectric stacks with areal capacitances of up to 40 nF/cm2 and leakage currents below 1 nA/cm2. Because of the chosen azide-based cross-linker, the dielectric promotes n-type unipolarization of the transistors and demonstrated to be compatible with different classes of semiconductors, from conjugated polymers to carbon nanotubes and low-temperature metal oxides. Our results demonstrate a general applicability of our unipolarizing dielectric, facilitating the implementation of complementary circuitry of emerging technologies with reduced power consumption.
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Affiliation(s)
- Andrea Perinot
- Center for Nano Science and Technology, Istituto Italiano di Tecnologia, Via Raffaele Rubattino 81, 20134 Milan, Italy
| | - Francesca Scuratti
- Center for Nano Science and Technology, Istituto Italiano di Tecnologia, Via Raffaele Rubattino 81, 20134 Milan, Italy
| | - Alberto D Scaccabarozzi
- Center for Nano Science and Technology, Istituto Italiano di Tecnologia, Via Raffaele Rubattino 81, 20134 Milan, Italy
| | - Karolina Tran
- Photophysics and OptoElectronics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
| | - Jorge Mario Salazar-Rios
- Photophysics and OptoElectronics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
| | - Maria Antonietta Loi
- Photophysics and OptoElectronics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
| | - Giovanni Salvatore
- Department of Molecular Sciences and Nanosystems, Ca' Foscari University of Venice, Via Torino, 155─Alfa Building, 30172 Mestre Venice, Italy
| | - Simone Fabiano
- Laboratory of Organic Electronics, Department of Science and Technology, Linköping University, 60 174 Norrköping, Sweden
| | - Mario Caironi
- Center for Nano Science and Technology, Istituto Italiano di Tecnologia, Via Raffaele Rubattino 81, 20134 Milan, Italy
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Ye H, Ryu KY, Kwon HJ, Lee H, Wang R, Hong J, Choi HH, Nam SY, Lee J, Kong H, Kim SH. Amorphous Fluorinated Acrylate Polymer Dielectrics for Flexible Transistors and Logic Gates with High Operational Stability. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37376772 DOI: 10.1021/acsami.3c02010] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/29/2023]
Abstract
Fluorinated amorphous polymeric gate-insulating materials for organic thin-film transistors (OTFTs) not only form hydrophobic surfaces but also significantly reduce traps at the interface between the organic semiconductor and gate insulator. Therefore, these polymeric materials can enhance the OTFT's operation stability. In this study, we synthesized a new polymeric insulating material series composed of acrylate and fluorinated functional groups (with different ratios) named MBHCa-F and used them as gate insulators for OTFTs and in other applications. The insulating features of the MBHCa-F polymers, including surface energy, surface atomic content properties, dielectric constant, and leakage current, were clearly analyzed with respect to the content of the fluorinated functional groups. At higher fluorine-based functional group content, the polymeric series exhibited higher fluorine-based contents at the surface and superior electrical properties, such as field-effect mobility and driving stability, at OTFTs. Therefore, we believe that this study provides a substantial method for synthesizing polymeric insulating materials to enhance the operational stability and electrical performance of OTFTs.
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Affiliation(s)
- Heqing Ye
- Department of Chemical Engineering, Yeungnam University, Gyeongsan 38541, Korea
| | - Ka Yeon Ryu
- Research Institute for Green Energy Convergence Techonology, Gyeongsang National University, Jinju 52828, Republic of Korea
- Department of Chemistry and Research Institute of Nature Science, Gyeongsang National University, Jinju 52828, Republic of Korea
| | - Hyeok-Jin Kwon
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 37673, Korea
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, United States
| | - Hyunji Lee
- Research Center for Advanced Specialty Chemicals, Korea Research Institute of Chemical Technology, Ulsan 44412 Republic of Korea
| | - Rixuan Wang
- Department of Chemical Engineering, Yeungnam University, Gyeongsan 38541, Korea
| | - Jisu Hong
- Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, United States
| | - Hyun Ho Choi
- Research Institute for Green Energy Convergence Techonology, Gyeongsang National University, Jinju 52828, Republic of Korea
| | - Sang Yong Nam
- Research Institute for Green Energy Convergence Techonology, Gyeongsang National University, Jinju 52828, Republic of Korea
| | - Jihoon Lee
- Department of Polymer Science and Engineering, Korea National University of Transportation, Chungju 27469, Republic of Korea
| | - Hoyoul Kong
- Department of Chemistry and Research Institute of Nature Science, Gyeongsang National University, Jinju 52828, Republic of Korea
| | - Se Hyun Kim
- School of Chemical Engineering, Konkuk University, Seoul 05029, Korea
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8
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Combination of Polymer Gate Dielectric and Two-Dimensional Semiconductor for Emerging Field-Effect Transistors. Polymers (Basel) 2023; 15:polym15061395. [PMID: 36987175 PMCID: PMC10051946 DOI: 10.3390/polym15061395] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/01/2023] [Revised: 03/04/2023] [Accepted: 03/08/2023] [Indexed: 03/16/2023] Open
Abstract
Two-dimensional (2D) materials are considered attractive semiconducting layers for emerging field-effect transistors owing to their unique electronic and optoelectronic properties. Polymers have been utilized in combination with 2D semiconductors as gate dielectric layers in field-effect transistors (FETs). Despite their distinctive advantages, the applicability of polymer gate dielectric materials for 2D semiconductor FETs has rarely been discussed in a comprehensive manner. Therefore, this paper reviews recent progress relating to 2D semiconductor FETs based on a wide range of polymeric gate dielectric materials, including (1) solution-based polymer dielectrics, (2) vacuum-deposited polymer dielectrics, (3) ferroelectric polymers, and (4) ion gels. Exploiting appropriate materials and corresponding processes, polymer gate dielectrics have enhanced the performance of 2D semiconductor FETs and enabled the development of versatile device structures in energy-efficient ways. Furthermore, FET-based functional electronic devices, such as flash memory devices, photodetectors, ferroelectric memory devices, and flexible electronics, are highlighted in this review. This paper also outlines challenges and opportunities in order to help develop high-performance FETs based on 2D semiconductors and polymer gate dielectrics and realize their practical applications.
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Poly(glycidyl azide) as Photo-Crosslinker for Polymers. Polymers (Basel) 2022; 14:polym14245451. [PMID: 36559818 PMCID: PMC9787972 DOI: 10.3390/polym14245451] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/13/2022] [Revised: 12/04/2022] [Accepted: 12/09/2022] [Indexed: 12/14/2022] Open
Abstract
Crosslinking polymers to form networks is a universal and routinely applied strategy to improve their stability and endow them with solvent resistance, adhesion properties, etc. However, the chemical crosslinking of common commercial polymers, especially for those without functional groups, cannot be achieved readily. In this study, we utilized low-molecular weight poly(glycidyl azide) (GAP) as polymeric crosslinkers to crosslink various commercial polymers via simple ultraviolet light irradiation. The azide groups were shown to decompose upon photo-irradiation and be converted to highly reactive nitrene species, which are able to insert into carbon-hydrogen bonds and thus crosslink the polymeric matrices. This strategy was demonstrated successfully in several commercial polymers. In particular, it was found that the crosslinking is highly localized, which could endow the polymeric matrices with a decent degree of crosslinking without significantly influencing other properties, suggesting a novel and robust method to crosslink polymeric materials.
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10
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Kwon HJ, Tang X, Kim S, Li Z, Wang R, Park BH, Kim C, Kim S, Hong J, Ryu KY, Choi HH, An TK, Lee J, Kim SH. Molecular Engineering of Printed Semiconducting Blends to Develop Organic Integrated Circuits: Crystallization, Charge Transport, and Device Application Analyses. ACS APPLIED MATERIALS & INTERFACES 2022; 14:23678-23691. [PMID: 35544719 DOI: 10.1021/acsami.2c02032] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Solution-based printing has contributed to the facile deposition of various types of materials, including the building blocks of printed electronics. In particular, solution-processable organic semiconductors (OSCs) are regarded as one of the most fascinating candidates for the fabrication of printed electronics. Herein, we report electrohydrodynamic (EHD) jet-printed p- and n-type OSCs, namely 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-PEN) and 6,13-bis((triisopropylsilyl)ethynyl)-5,7,12,14-tetraazapentacene (TIPS-TAP), and their use as single-OSC layers and as OSC mixed p-n layers to fabricate solution-processed p-, n-, and ambipolar-type organic field-effect transistors (OFETs). Use of the dragging mode of EHD jet printing, a process driven under a low electrostatic field with a short nozzle-to-substrate distance, was found to provide favorable conditions for growth of TIPS-PEN and TIPS-TAP crystals. In this way, the similar molecular structures of TIPS-PEN and TIPS-TAP yielded a homogeneous solid solution and showed ambipolar transport properties in OFETs. Therefore, the combination of single- and mixed-OSC layers enabled the preparation of various charge-transported devices from unit to integrated devices (NOT, NAND, NOR, and multivalued logic). Therefore, this fabrication technology can be useful for assisting in the production of OSC layers for practical applications in the near future.
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Affiliation(s)
- Hyeok-Jin Kwon
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 37673, Korea
| | - Xiaowu Tang
- College of Material and Chemical Engineering, Zhengzhou University of Light Industry, Zhengzhou, Henan 450002, China
| | - Seonghyeon Kim
- Department of IT·Energy Convergence (BK21 Four), Korea National University of Transportation, Chungju 27469, Republic of Korea
| | - Zhijun Li
- School of Chemical Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea
| | - Rixuan Wang
- School of Chemical Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea
| | - Byung Ho Park
- EMNI Co., Ltd., 14, Seocheon-ro 201beon-gil, Yongin 17111, Republic of Korea
| | - Cheulhwan Kim
- Department of IT·Energy Convergence (BK21 Four), Korea National University of Transportation, Chungju 27469, Republic of Korea
| | - Soyeon Kim
- Department of IT·Energy Convergence (BK21 Four), Korea National University of Transportation, Chungju 27469, Republic of Korea
| | - Jisu Hong
- Research Institute for Green Energy Convergence Techonology, Gyeongsang National University, Jinju 52828, Republic of Korea
- Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, United States
| | - Ka Yeon Ryu
- Research Institute for Green Energy Convergence Techonology, Gyeongsang National University, Jinju 52828, Republic of Korea
| | - Hyun Ho Choi
- Research Institute for Green Energy Convergence Techonology, Gyeongsang National University, Jinju 52828, Republic of Korea
- Department of Materials Engineering and Convergence Technology, Gyeongsang National University, Jinju 52828, Korea
| | - Tae Kyu An
- Department of IT·Energy Convergence (BK21 Four), Korea National University of Transportation, Chungju 27469, Republic of Korea
- Department of Polymer Science and Engineering, Korea National University of Transportation, Chungju 27469, Republic of Korea
- Chemical Industry Institute, Korea National University of Transportation, Chungju 27469, Republic of Korea
| | - Jihoon Lee
- Department of IT·Energy Convergence (BK21 Four), Korea National University of Transportation, Chungju 27469, Republic of Korea
- Department of Polymer Science and Engineering, Korea National University of Transportation, Chungju 27469, Republic of Korea
- Chemical Industry Institute, Korea National University of Transportation, Chungju 27469, Republic of Korea
| | - Se Hyun Kim
- School of Chemical Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea
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11
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An S, Hassan SZ, Jung JW, Cha H, Cho CH, Chung DS. Covalent Networking of a Conjugated-Polymer Photocatalyst to Promote Exciton Diffusion in the Aqueous Phase for Efficient Hydrogen Production. SMALL METHODS 2022; 6:e2200010. [PMID: 35253408 DOI: 10.1002/smtd.202200010] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/04/2022] [Revised: 01/28/2022] [Indexed: 06/14/2023]
Abstract
A conjugated polymer particle in an aqueous phase is covalently networked in 3D by crosslinking with azide groups, leading to significantly enhanced activity-a high photocatalytic H2 evolution rate (11 024 µmol g-1 h-1 (λ > 420 nm)) and a high apparent quantum yield (up to 0.8%). The reaction between the photoactive azide and the alkyl chains of the conjugated polymer provides more intact intermolecular polymeric interactions in the colloidal state, thus preventing physical swelling and inhibiting the recombination of photoproduced carriers. The covalent network efficiently promotes exciton diffusion, which greatly facilitates charge separation and transfer. The azide photo-crosslinking also leads to more compact and better-packed nanoparticles in the aqueous phase and efficient transfer of excitons to the outer surface of the nanoparticles, where photocatalytic reactions occur. These results show that photo-crosslinking can suppress the adverse effects of alkyl chains which inhibit photocatalytic performance. Therefore, covalent crosslinking is a promising strategy for the development of solar and hydrogen energy.
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Affiliation(s)
- Sanghyeok An
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37363, Republic of Korea
| | - Syed Zahid Hassan
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37363, Republic of Korea
| | - Jin-Woo Jung
- Department of Emerging Materials Science, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea
| | - Hyojung Cha
- Department of Hydrogen & Renewable Energy, Kyungpook National University, Daegu, 41566, Republic of Korea
| | - Chang-Hee Cho
- Department of Emerging Materials Science, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea
| | - Dae Sung Chung
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37363, Republic of Korea
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12
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Cheon HJ, An TK, Kim YH. Diketopyrrolopyrrole (DPP)-Based Polymers and Their Organic Field-Effect Transistor Applications: A Review. Macromol Res 2022. [DOI: 10.1007/s13233-022-0015-y] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/18/2022]
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13
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Mass-Synthesized Solution-Processable Polyimide Gate Dielectrics for Electrically Stable Operating OFETs and Integrated Circuits. Polymers (Basel) 2021; 13:polym13213715. [PMID: 34771272 PMCID: PMC8586921 DOI: 10.3390/polym13213715] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/27/2021] [Revised: 10/25/2021] [Accepted: 10/26/2021] [Indexed: 11/17/2022] Open
Abstract
Polyimides (PIs) are widely utilized polymeric materials for high-temperature plastics, adhesives, dielectrics, nonlinear optical materials, flexible hard-coating films, and substrates for flexible electronics. PIs can be facilely mass-produced through factory methods, so the industrial application value is limitless. Herein, we synthesized a typical poly(amic acid) (PAA) precursor-based solution through an industrialized reactor for mass production and applied the prepared solution to form thin films of PI using thermal imidization. The deposited PI thin films were successfully applied as gate dielectrics for organic field-effect transistors (OFETs). The PI layers showed suitable characteristics for dielectrics, such as a smooth surface, low leakage current density, uniform dielectric constant (k) values regardless of frequency, and compatibility with organic semiconductors. Utilizing this PI layer, we were able to fabricate electrically stable operated OFETs, which exhibited a threshold voltage shift lower than 1 V under bias-stress conditions and a field-effect mobility of 4.29 cm2 V-1 s-1. Moreover, integrated logic gates were manufactured using these well-operated OFETs and displayed suitable operation behavior.
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14
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Tang X, Jo Y, Kwon HJ, Wu K, Li Z, Kim S, Park CE, An TK, Lee J, Kim SH. Electrohydrodynamic-Jet-Printed Cinnamate-Fluorinated Cross-Linked Polymeric Dielectrics for Flexible and Electrically Stable Operating Organic Thin-Film Transistors and Integrated Devices. ACS APPLIED MATERIALS & INTERFACES 2021; 13:50149-50162. [PMID: 34636542 DOI: 10.1021/acsami.1c08562] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Herein, printable polymer series containing different portions of cinnamate and perfluorinated phenyl functionalities, namely, polyperfluorostyrene-co-poly(vinylbenzyl cinnamates) (PFS-co-PVBCi (x:y)) copolymers, were synthesized and applied as gate dielectrics for organic thin-film transistors (OTFTs). The polymeric dielectrics were successfully printed via electrostatic force-assisted dispensing mode of electrohydrodynamic jet printing. The dielectric characteristics of the printed polymers, such as surface energy, dielectric constant, leakage current, atomic depth profiles, and deposited semiconducting layer characteristics, were clearly identified. In particular, the difference in driving stability of OTFTs according to the type of polymer was analyzed in detail and a possible mechanism was proposed. Results suggested that PFS-co-PVBCi (3:7) led to optimized consequences, yielding an almost negligible Vth shift under continuous bias stress. Through this, we successfully implemented flexible OTFT and logic devices using printed PFS-co-PVBCi (3:7) dielectrics with stable operation properties. Therefore, we believe that this study will facilitate the printing and synthesis of polymer dielectrics to produce printed and flexible OTFTs.
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Affiliation(s)
- Xiaowu Tang
- Department of Advanced Organic Materials Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea
| | - Yohan Jo
- Department of IT Convergence, Korea National University of Transportation, Chungju 27469, Republic of Korea
| | - Hyeok-Jin Kwon
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
| | - Kaibin Wu
- School of Chemical Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea
| | - Zhijun Li
- School of Chemical Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea
| | - Seonghyeon Kim
- Department of IT Convergence, Korea National University of Transportation, Chungju 27469, Republic of Korea
| | - Chan Eon Park
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
| | - Tae Kyu An
- Department of IT Convergence, Korea National University of Transportation, Chungju 27469, Republic of Korea
- Department of Polymer Science and Engineering, Korea National University of Transportation, Chungju 27469, Republic of Korea
| | - Jihoon Lee
- Department of IT Convergence, Korea National University of Transportation, Chungju 27469, Republic of Korea
- Department of Polymer Science and Engineering, Korea National University of Transportation, Chungju 27469, Republic of Korea
| | - Se Hyun Kim
- School of Chemical Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea
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15
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Zheng Y, Yu Z, Zhang S, Kong X, Michaels W, Wang W, Chen G, Liu D, Lai JC, Prine N, Zhang W, Nikzad S, Cooper CB, Zhong D, Mun J, Zhang Z, Kang J, Tok JBH, McCulloch I, Qin J, Gu X, Bao Z. A molecular design approach towards elastic and multifunctional polymer electronics. Nat Commun 2021; 12:5701. [PMID: 34588448 PMCID: PMC8481247 DOI: 10.1038/s41467-021-25719-9] [Citation(s) in RCA: 42] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/06/2021] [Accepted: 08/24/2021] [Indexed: 11/30/2022] Open
Abstract
Next-generation wearable electronics require enhanced mechanical robustness and device complexity. Besides previously reported softness and stretchability, desired merits for practical use include elasticity, solvent resistance, facile patternability and high charge carrier mobility. Here, we show a molecular design concept that simultaneously achieves all these targeted properties in both polymeric semiconductors and dielectrics, without compromising electrical performance. This is enabled by covalently-embedded in-situ rubber matrix (iRUM) formation through good mixing of iRUM precursors with polymer electronic materials, and finely-controlled composite film morphology built on azide crosslinking chemistry which leverages different reactivities with C-H and C=C bonds. The high covalent crosslinking density results in both superior elasticity and solvent resistance. When applied in stretchable transistors, the iRUM-semiconductor film retained its mobility after stretching to 100% strain, and exhibited record-high mobility retention of 1 cm2 V-1 s-1 after 1000 stretching-releasing cycles at 50% strain. The cycling life was stably extended to 5000 cycles, five times longer than all reported semiconductors. Furthermore, we fabricated elastic transistors via consecutively photo-patterning of the dielectric and semiconducting layers, demonstrating the potential of solution-processed multilayer device manufacturing. The iRUM represents a molecule-level design approach towards robust skin-inspired electronics.
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Affiliation(s)
- Yu Zheng
- Department of Chemical Engineering, Stanford University, Stanford, CA, USA
- Department of Chemistry, Stanford University, Stanford, CA, USA
| | - Zhiao Yu
- Department of Chemical Engineering, Stanford University, Stanford, CA, USA
- Department of Chemistry, Stanford University, Stanford, CA, USA
| | - Song Zhang
- School of Polymer Science and Engineering, The University of Southern Mississippi, Hattiesbury, MS, USA
| | - Xian Kong
- Department of Chemical Engineering, Stanford University, Stanford, CA, USA
| | - Wesley Michaels
- Department of Chemical Engineering, Stanford University, Stanford, CA, USA
| | - Weichen Wang
- Department of Chemical Engineering, Stanford University, Stanford, CA, USA
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, USA
| | - Gan Chen
- Department of Chemical Engineering, Stanford University, Stanford, CA, USA
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, USA
| | - Deyu Liu
- Department of Chemical Engineering, Stanford University, Stanford, CA, USA
| | - Jian-Cheng Lai
- Department of Chemical Engineering, Stanford University, Stanford, CA, USA
| | - Nathaniel Prine
- School of Polymer Science and Engineering, The University of Southern Mississippi, Hattiesbury, MS, USA
| | - Weimin Zhang
- King Abdullah University of Science and Technology (KAUST), Kaust Solar Center (KSC), Thuwal, Saudi Arabia
- Department of Chemistry, Chemistry Research Laboratory, University of Oxford, Oxford, UK
| | - Shayla Nikzad
- Department of Chemical Engineering, Stanford University, Stanford, CA, USA
| | | | - Donglai Zhong
- Department of Chemical Engineering, Stanford University, Stanford, CA, USA
| | - Jaewan Mun
- Department of Chemical Engineering, Stanford University, Stanford, CA, USA
| | - Zhitao Zhang
- Department of Chemical Engineering, Stanford University, Stanford, CA, USA
| | - Jiheong Kang
- Department of Chemical Engineering, Stanford University, Stanford, CA, USA
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
| | - Jeffrey B-H Tok
- Department of Chemical Engineering, Stanford University, Stanford, CA, USA
| | - Iain McCulloch
- King Abdullah University of Science and Technology (KAUST), Kaust Solar Center (KSC), Thuwal, Saudi Arabia
- Department of Chemistry, Chemistry Research Laboratory, University of Oxford, Oxford, UK
| | - Jian Qin
- Department of Chemical Engineering, Stanford University, Stanford, CA, USA
| | - Xiaodan Gu
- School of Polymer Science and Engineering, The University of Southern Mississippi, Hattiesbury, MS, USA
| | - Zhenan Bao
- Department of Chemical Engineering, Stanford University, Stanford, CA, USA.
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16
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Tang X, Kwon HJ, Li Z, Wang R, Kim SJ, Park CE, Jeong YJ, Kim SH. Strategy for Selective Printing of Gate Insulators Customized for Practical Application in Organic Integrated Devices. ACS APPLIED MATERIALS & INTERFACES 2021; 13:1043-1056. [PMID: 33356127 DOI: 10.1021/acsami.0c18477] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Direct drawing techniques have contributed to the ease of patterning soft electronic materials, which are the building blocks of analog and digital integrated circuits. In parallel with the printing of semiconductors and electrodes, selective deposition of gate insulators (GI) is an equally important factor in simplifying the fabrication of integrated devices, such as NAND and NOR gates, and memory devices. This study demonstrates the fabrication of six types of printed GI layers (high/low-k polymer and organic-inorganic hybrid material), which are utilized as GIs in organic field-effect transistors (OFETs), using the electrostatic-force-assisted dispensing printing technique. The selective printing of GIs on the gate electrodes enables us to develop practical integrated devices that go beyond unit OFET devices, exhibiting robust switching performances, non-destructive operations, and high gain values. Moreover, the flexible integrated devices fabricated using this technique exhibit excellent operational behavior. Therefore, this facile fabrication technique can pave a new path for the production of practical integrated device arrays for next-generation devices.
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Affiliation(s)
- Xiaowu Tang
- Department of Advanced Organic Materials Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea
| | - Hyeok-Jin Kwon
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
| | - Zhijun Li
- Department of Advanced Organic Materials Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea
| | - Rixuan Wang
- Department of Advanced Organic Materials Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea
| | - Se Jin Kim
- Department of Materials Science & Engineering, Korea National University of Transportation, Chungju 27469, Republic of Korea
| | - Chan Eon Park
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
| | - Yong Jin Jeong
- Department of Materials Science & Engineering, Korea National University of Transportation, Chungju 27469, Republic of Korea
| | - Se Hyun Kim
- Department of Advanced Organic Materials Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea
- School of Chemical Engineering, Yeungnam University, Gyeongsan 38541, Republic of Korea
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