Resistive Switching Memory Performance of Two-Dimensional Polyimide Covalent Organic Framework Films

A carbonyl-decorated two-dimensional polymer as a charge-trapping layer for non-volatile memory storage devices with a high endurance and wide memory window

The charge-trapping mechanism in conjugated polymers is a performance obstacle in many optoelectronic devices harnessed for non-volatile memory applications. Herein, a carbonyl-decorated organic 2D-polymer (TpDb)-based charge-trapping memory device has been developed with a wide memory window (3.2 V) with low programming and erasing voltages of +3/-2 and -3/+2. The TpDb was synthesized by a potentially scalable solid-state aldol condensation reaction. The inherent structural defects and the semi-conjugated nature of the enone network in TpDb offer effective charge-trapping through the localization of charges in specific functional groups (CO). The interlayer hydrogen bonding enhances the packing density of the 2D-polymer layers thereby improving the memory storage properties of the material. Furthermore, the TpDb exhibits excellent features for non-volatile memory applications including over 10 000 cycles of write/read endurance and a prolonged retention performance of 104 seconds at high temperatures (100 °C).

One-Dimensional Covalent Organic Framework-Based Multilevel Memristors for Neuromorphic Computing

Memristors are essential components of neuromorphic systems that mimic the synaptic plasticity observed in biological neurons. In this study, a novel approach employing one-dimensional covalent organic framework (1D COF) films was explored to enhance the performance of memristors. The unique structural and electronic properties of two 1D COF films (COF-4,4'-methylenedianiline (MDA) and COF-4,4'-oxydianiline (ODA)) offer advantages for multilevel resistive switching, which is a key feature in neuromorphic computing applications. By further introducing a TiO2 layer on the COF-ODA film, a built-in electric field between the COF-TiO2 interfaces could be generated, demonstrating the feasibility of utilizing COFs as a platform for constructing memristors with tunable resistive states. The 1D nanochannels of these COF structures contributed to the efficient modulation of electrical conductance, enabling precise control over synaptic weights in neuromorphic circuits. This study also investigated the potential of these COF-based memristors to achieve energy-efficient and high-density memory devices.

Resistive Memristors Using Robust Electropolymerized Porous Organic Polymer Films as Switchable Materials

Porous organic polymers (POPs) with inherent porosity, tunable pore environment, and semiconductive property are ideally suitable for application in various advanced semiconductor-related devices. However, owing to the lack of processability, POPs are usually prepared in powder forms, which limits their application in advanced devices. Herein, we demonstrate an example of information storage application of POPs with film form prepared by an electrochemical method. The growth process of the electropolymerized films in accordance with the Volmer-Weber model was proposed by observation of atomic force microscopy. Given the mechanism of the electron transfer system, we verified and mainly emphasized the importance of porosity and interfacial properties of porous polymer films for memristor. As expected, the as-fabricated memristors exhibit good performance on low turn-on voltage (0.65 ± 0.10 V), reliable data storage, and high on/off current ratio (104). This work offers inspiration for applying POPs in the form of electropolymerized films in various advanced semiconductor-related devices.

3D Covalent Organic Frameworks from Design, Synthesis to Applications in Optoelectronics

Covalent organic frameworks (COFs), a new class of crystalline materials connected by covalent bonds, have been developed rapidly in the past decades. However, the research on COFs is mainly focused on two-dimensional (2D) COFs, and the research on three-dimensional (3D) COFs is still in the initial stage. In 2D COFs, the covalent bonds exist only in the 2D flakes and can form 1D channels, which hinder the charge transport to some extent. In contrast, 3D COFs have a more complex pore structure and thus exhibit higher specific surface area and richer active sites, which greatly enhance the 3D charge carrier transport. Therefore, compared to 2D COFs, 3D COFs have stronger applicability in energy storage and conversion, sensing, and optoelectronics. In this review, it is first introduced the design principles for 3D COFs, and in particular summarize the development of conjugated building blocks in 3D COFs, with a special focus on their application in optoelectronics. Subsequently, the preparation of 3D COF powders and thin films and methods to improve the stability and functionalization of 3D COFs are summarized. Moreover, the applications of 3D COFs in electronics are outlined. Finally, conclusions and future research directions for 3D COFs are presented.

2D Conjugated Polymer Thin Films for Organic Electronics: Opportunities and Challenges

2D conjugated polymers (2DCPs) possess extended in-plane π-conjugated lattice and out-of-plane π-π stacking, which results in enhanced electronic performance and potentially unique band structures. These properties, along with predesignability, well-defined channels, easy postmodification, and order structure attract extensive attention from material science to organic electronics. In this review, the recent advance in the interfacial synthesis and conductivity tuning strategies of 2DCP thin films, as well as their application in organic electronics is summarized. Furthermore, it is shown that, by combining topology structure design and targeted conductivity adjustment, researchers have fabricated 2DCP thin films with predesigned active groups, highly ordered structures, and enhanced conductivity. These films exhibit great potential for various thin-film organic electronics, such as organic transistors, memristors, electrochromism, chemiresistors, and photodetectors. Finally, the future research directions and perspectives of 2DCPs are discussed in terms of the interfacial synthetic design and structure engineering for the fabrication of fully conjugated 2DCP thin films, as well as the functional manipulation of conductivity to advance their applications in future organic electronics.

COF-Based Photocatalysts for Enhanced Synthesis of Hydrogen Peroxide

Covalent Organic Frameworks (COFs), with their intrinsic structural regularity and modifiable chemical functionality, have burgeoned as a pivotal material in the realm of photocatalytic hydrogen peroxide (H2O2) synthesis. This article reviews the recent advancements and multifaceted approaches employed in using the unique properties of COFs for high-efficient photocatalytic H2O2 production. We first introduced COFs and their advantages in the photocatalytic synthesis of H2O2. Subsequently, we spotlight the principles and evaluation of photocatalytic H2O2 generation, followed by various strategies for the incorporation of active sites aiming to optimize the separation and transfer of photoinduced charge carriers. Finally, we explore the challenges and future prospects, emphasizing the necessity for a deeper mechanistic understanding and the development of scalable and economically viable COF-based photocatalysts for sustainable H2O2 production.

Overcoming the Unfavorable Effects of "Boltzmann Tyranny:" Ultra-Low Subthreshold Swing in Organic Phototransistors via One-Transistor-One-Memristor Architecture

Organic phototransistors (OPTs), as photosensitive organic field-effect transistors (OFETs), have gained significant attention due to their pivotal roles in imaging, optical communication, and night vision. However, their performance is fundamentally limited by the Boltzmann distribution of charge carriers, which constrains the average subthreshold swing (SSave ) to a minimum of 60 mV/decade at room temperature. In this study, an innovative one-transistor-one-memristor (1T1R) architecture is proposed to overcome the Boltzmann limit in conventional OFETs. By replacing the source electrode in an OFET with a memristor, the 1T1R device exploits the memristor's sharp resistance state transitions to achieve an ultra-low SSave of 18 mV/decade. Consequently, the 1T1R devices demonstrate remarkable sensitivity to photo illumination, with a high specific detectivity of 3.9 × 109  cm W-1 Hz1/2 , outperforming conventional OPTs (4.9 × 104  cm W-1 Hz1/2 ) by more than four orders of magnitude. The 1T1R architecture presents a potentially universal solution for overcoming the detrimental effects of "Boltzmann tyranny," setting the stage for the development of ultra-low SSave devices in various optoelectronic applications.

Recent advances of pure/independent covalent organic framework membrane materials: preparation, properties and separation applications

Covalent organic frameworks (COF) are porous crystalline polymers connected by covalent bonds. Due to their inherent high specific surface area, tunable pore size, and good stability, they have attracted extensive attention from researchers. In recent years, COF membrane materials developed rapidly, and a large amount of research work has been presented on the preparation methods, properties, and applications of COF membranes. This review focuses on the research on independent/pure continuous COF membranes. First, based on the membrane formation mechanism, COF membrane preparation methods are categorized into two main groups: bottom-up and top-down. Four methods are presented, namely, solvothermal, interfacial polymerization, steam-assisted conversion, and layer by layer. Then, the aperture, hydrophilicity/hydrophobicity and surface charge properties of COF membranes are summarized and outlined. According to the application directions of gas separation, water treatment, organic solvent nanofiltration, pervaporation and energy, the latest research results of COF membranes are presented. Finally, the challenges and future directions of COF membranes are summarized and an outlook provided. It is hoped that this work will inspire and motivate researchers in related fields.

Multistate structures in a hydrogen-bonded polycatenation non-covalent organic framework with diverse resistive switching behaviors

The inherent structural flexibility and reversibility of non-covalent organic frameworks have enabled them to exhibit switchable multistate structures under external stimuli, providing great potential in the field of resistive switching (RS), but not well explored yet. Herein, we report the 0D+1D hydrogen-bonded polycatenation non-covalent organic framework (HOF-FJU-52), exhibiting diverse and reversible RS behaviors with the high performance. Triggered by the external stimulus of electrical field E at room temperature, HOF-FJU-52 has excellent resistive random-access memory (RRAM) behaviors, comparable to the state-of-the-art materials. When cooling down below 200 K, it was transferred to write-once-read-many-times memory (WORM) behaviors. The two memory behaviors exhibit reversibility on a single crystal device through the temperature changes. The RS mechanism of this non-covalent organic framework has been deciphered at the atomic level by the detailed single-crystal X-ray diffraction analyses, demonstrating that the structural dual-flexibility both in the asymmetric hydrogen bonded dimers within the 0D loops and in the infinite π-π stacking column between the loops and chains contribute to reversible structure transformations between multi-states and thus to its dual RS behaviors.

Emerging Robust Polymer Materials for High-Performance Two-Terminal Resistive Switching Memory

Facing the era of information explosion and the advent of artificial intelligence, there is a growing demand for information technologies with huge storage capacity and efficient computer processing. However, traditional silicon-based storage and computing technology will reach their limits and cannot meet the post-Moore information storage requirements of ultrasmall size, ultrahigh density, flexibility, biocompatibility, and recyclability. As a response to these concerns, polymer-based resistive memory materials have emerged as promising candidates for next-generation information storage and neuromorphic computing applications, with the advantages of easy molecular design, volatile and non-volatile storage, flexibility, and facile fabrication. Herein, we first summarize the memory device structures, memory effects, and memory mechanisms of polymers. Then, the recent advances in polymer resistive switching materials, including single-component polymers, polymer mixtures, 2D covalent polymers, and biomacromolecules for resistive memory devices, are highlighted. Finally, the challenges and future prospects of polymer memory materials and devices are discussed. Advances in polymer-based memristors will open new avenues in the design and integration of high-performance switching devices and facilitate their application in future information technology.

Carborane-Based Three-Dimensional Covalent Organic Frameworks

The predesignable porous structure and high structural flexibility of covalent organic frameworks (COFs) render this material desirable as a platform for addressing various cutting-edge issues. Precise control over their composition, topological structure, porosity, and stability to realize tailor-made functionality still remains a great challenge. In this work, we developed a new kind of three-dimensional (3D) carborane-based COF with a 7-fold interpenetrating dia topological diagram. The resulting COFs exhibited high crystallinity, exceptional porosity, and strong robustness. The slightly lower electronegativity of boron (2.04) than that of hydrogen (2.20) can lead to the polarization of the B-H bond into a Bδ+-Hδ- mode, which renders these COFs as high-performance materials for the adsorption and separation of hexane isomers through the B-Hδ-···Hδ+-C interaction. Significantly, the carborane content of obtained COFs reached up to 54.2 wt %, which gets the highest rank among all the reported porous materials. Combining high surface area, strong robustness, and high content of carborane, the obtained COFs can work as efficient adsorbents for the separation of the five hexane isomers with high separation factors. This work not only enhances the diversity of 3D functional COFs but also constitutes a further step toward the efficient separation of alkane isomers.

Research Progress in Donor-Acceptor Type Covalent Organic Frameworks

Covalent organic frameworks (COFs) are new organic porous materials constructed by covalent bonds, with the advantages of pre-designable topology, adjustable pore size, and abundant active sites. Many research studies have shown that COFs exhibit great potential in gas adsorption, molecular separation, catalysis, drug delivery, energy storage, etc. However, the electrons and holes of intrinsic COF are prone to compounding in transport, and the carrier lifetime is short. The donor-acceptor (D-A) type COFs, which are synthesized by introducing D and A units into the COFs backbone, combine separated electron and hole migration pathway, tunable band gap and optoelectronic properties of D-A type polymers with the unique advantages of COFs and have made great progress in related research in recent years. Here, the synthetic strategies of D-A type COFs are first outlined, including the rational design of linkages and D-A units as well as functionalization approaches. Then the applications of D-A type COFs in catalytic reactions, photothermal therapy, and electronic materials are systematically summarized. In the final section, the current challenges, and new directions for the development of D-A type COFs are presented.

Solution-Processed Hydrogen-Bonded Organic Framework Nanofilms for High-Performance Resistive Memory Devices

The integration of hydrogen-bonded organic frameworks (HOFs) into electronic devices holds great promise due to their high crystallinity, intrinsic porosity, and easy regeneration. However, despite their potential, the utilization of HOFs in electronic devices remains largely unexplored, primarily due to the challenges associated with fabricating high-quality films. Herein, a controlled synthesis of HOF nanofilms with smooth surface, good crystallinity, and high orientation is achieved using a solution-processed approach. The memristors exhibit outstanding bipolar switching performance with a low set voltage of 0.86 V, excellent retention of 1.64 × 104 s, and operational endurance of 60 cycles. Additionally, these robust memristors display remarkable thermal stability, maintaining their performance even at elevated temperatures of up to 200 °C. More strikingly, scratched HOF films can be readily regenerated through a simple solvent rinsing process, enabling their reuse for the fabrication of new memristors, which is difficult to achieve with traditional resistive switching materials. Additionally, a switching mechanism based on the reversible formation and annihilation of conductive filaments is revealed. This work provides novel and invaluable insights that have a significant impact on advancing the widespread adoption of HOFs as active layers in electronic devices.

Porous crystalline materials for memories and neuromorphic computing systems

Porous crystalline materials usually include metal-organic frameworks (MOFs), covalent organic frameworks (COFs), hydrogen-bonded organic frameworks (HOFs) and zeolites, which exhibit exceptional porosity and structural/composition designability, promoting the increasing attention in memory and neuromorphic computing systems in the last decade. From both the perspective of materials and devices, it is crucial to provide a comprehensive and timely summary of the applications of porous crystalline materials in memory and neuromorphic computing systems to guide future research endeavors. Moreover, the utilization of porous crystalline materials in electronics necessitates a shift from powder synthesis to high-quality film preparation to ensure high device performance. This review highlights the strategies for preparing porous crystalline materials films and discusses their advancements in memory and neuromorphic electronics. It also provides a detailed comparative analysis and presents the existing challenges and future research directions, which can attract the experts from various fields (e.g., materials scientists, chemists, and engineers) with the aim of promoting the applications of porous crystalline materials in memory and neuromorphic computing systems.

Covalent Organic Frameworks for Neuromorphic Devices

Neuromorphic computing could enable the potential to break the inherent limitations of conventional von Neumann architectures, which has led to widespread research interest in developing novel neuromorphic memory devices, such as memristors and bioinspired artificial synaptic devices. Covalent organic frameworks (COFs), as crystalline porous polymers, have tailorable skeletons and pores, providing unique platforms for the interplay with photons, excitons, electrons, holes, ions, spins, and molecules. Such features encourage the rising research interest in COF materials in neuromorphic electronics. To develop high-performance COF-based neuromorphic memory devices, it is necessary to comprehensively understand materials, devices, and applications. Therefore, this Perspective focuses on discussing the use of COF materials for neuromorphic memory devices in terms of molecular design, thin-film processing, and neuromorphic applications. Finally, we provide an outlook for future directions and potential applications of COF-based neuromorphic electronics.

Pore partition in two-dimensional covalent organic frameworks

Covalent organic frameworks (COFs) have emerged as a kind of crystalline polymeric materials with high compositional and geometric tunability. Most COFs are currently designed and synthesized as mesoporous (2-50 nm) and microporous (1-2 nm) materials, while the development of ultramicroporous (<1 nm) COFs remains a daunting challenge. Here, we develop a pore partition strategy into COF chemistry, which allows for the segmentation of a mesopore into multiple uniform ultramicroporous domains. The pore partition is implemented by inserting an additional rigid building block with suitable symmetries and dimensions into a prebuilt parent framework, leading to the partitioning of one mesopore into six ultramicropores. The resulting framework features a wedge-shaped pore with a diameter down to 6.5 Å, which constitutes the smallest pore among COFs. The wedgy and ultramicroporous one-dimensional channels enable the COF to be highly efficient for the separation of five hexane isomers based on the sieving effect. The obtained average research octane number (RON) values of those isomer blends reach up to 99, which is among the highest records for zeolites and other porous materials. Therefore, this strategy constitutes an important step in the pore functional exploitation of COFs to implement pre-designed compositions, components, and functions.

Tailoring the Resistive Switching WORM Memory Behavior of Functionalized Bis(triphenylamine)

To better understand the structure-property relationship and the significance of the donor-acceptor (D-A) system in resistive memory devices, a series of new organic small molecules with A-π-D-π-A- and D-π-D-π-D-based architecture comprising a bis(triphenylamine) core unit and ethynyl-linked electron donor/acceptor arms were designed and synthesized. The devices with A-π-D-π-A structures exhibited write-once-read-many memory behavior with a good retention time of 1000 s while those based on D-π-D-π-D molecules presented only conductor property. The compound with nitrophenyl substitution resulted in a higher ON/OFF current ratio of 10⁴, and the fluorophenyl substitution exhibited the lowest threshold voltage of -1.19 V. Solubility of the compounds in common organic solvents suggests that they are promising candidates for economic solution-processable techniques. Density functional theory calculations were used to envision the frontier molecular orbitals and to support the proposed resistive switching mechanisms. It is inferred that the presence of donor/acceptor substituents has a significant impact on the highest occupied molecular orbital-lowest unoccupied molecular orbital energy levels of the molecules, which affects their memory-switching behavior and thus suggests that a D-A architecture is ideal for memory device resistance switching characteristics.

Adaptive 2D and Pseudo-2D Systems: Molecular, Polymeric, and Colloidal Building Blocks for Tailored Complexity

Two-dimensional and pseudo-2D systems come in various forms. Membranes separating protocells from the environment were necessary for life to occur. Later, compartmentalization allowed for the development of more complex cellular structures. Nowadays, 2D materials (e.g., graphene, molybdenum disulfide) are revolutionizing the smart materials industry. Surface engineering allows for novel functionalities, as only a limited number of bulk materials have the desired surface properties. This is realized via physical treatment (e.g., plasma treatment, rubbing), chemical modifications, thin film deposition (using both chemical and physical methods), doping and formulation of composites, or coating. However, artificial systems are usually static. Nature creates dynamic and responsive structures, which facilitates the formation of complex systems. The challenge of nanotechnology, physical chemistry, and materials science is to develop artificial adaptive systems. Dynamic 2D and pseudo-2D designs are needed for future developments of life-like materials and networked chemical systems in which the sequences of the stimuli would control the consecutive stages of the given process. This is crucial to achieving versatility, improved performance, energy efficiency, and sustainability. Here, we review the advancements in studies on adaptive, responsive, dynamic, and out-of-equilibrium 2D and pseudo-2D systems composed of molecules, polymers, and nano/microparticles.

Novel ternary organic resistive switching memory doped with bipolar materials

Organic resistive switching memory (ORSM) shows great potential for neotype memory devices due to the preponderances of simple architecture, low power consumption, high switching speed and feasibility of large-area fabrication. Herein, solution-processed ternary ORSM devices doped with bipolar materials were achieved with high ON/OFF ratio and outstanding device stability. The resistive switching performance was effectively ameliorated by doping two bipolar materials (DpAn-InAc and DpAn-5BzAc) in different blending concentration into the PVK:OXD-7 donor-accepter system. Compared with the binary system (PVK: 30 wt% OXD-7), the ON/OFF ratios of the ternary devices doped with 6 wt% DpAn-5BzAc were greatly increased from 7.91 × 10²to 4.98 × 10⁴, with the operating voltage (∣V_set-V_reset∣) declined from 4.90 V to 2.25 V, respectively. Additionally, the stability of resistance state and uniformity of operating voltage were also significantly optimized for the ternary devices. For comparison, ternary devices doped with DpAn-InAc have been explored, which also achieved improved resistive switching behavior. A detailed analysis of electrical characteristics and the internal charge transfer properties of ORSM was performed to unveil the performance enhancement in ternary devices. Results indicate that the use of bipolar materials favors the efficient operation of OSRMs with proper energy level alignment and effective charge transfer.

The effect of enantioselective chiral covalent organic frameworks and cysteine sacrificial donors on photocatalytic hydrogen evolution

Covalent organic frameworks (COFs) have constituted an emerging class of organic photocatalysts showing enormous potential for visible photocatalytic H₂ evolution from water. However, suffering from sluggish reaction kinetics, COFs often cooperate with precious metal co-catalysts for essential proton-reducing capability. Here, we synthesize a chiral β-ketoenamine-linked COF coordinated with 10.51 wt% of atomically dispersed Cu(II) as an electron transfer mediator. The enantioselective combination of the chiral COF-Cu(II) skeleton with L-/D-cysteine sacrificial donors remarkably strengthens the hole extraction kinetics, and in turn, the photoinduced electrons accumulate and rapidly transfer via the coordinated Cu ions. Also, the parallelly stacking sequence of chiral COFs provides the energetically favorable arrangement for the H-adsorbed sites. Thus, without precious metal, the visible photocatalytic H₂ evolution rate reaches as high as 14.72 mmol h⁻¹ g⁻¹ for the enantiomeric mixtures. This study opens up a strategy for optimizing the reaction kinetics and promises the exciting potential of chiral COFs for photocatalysis.

Chiral covalent organic frameworks are demonstrated to enable the docking of sacrificial electron donors via enantioselective combination, thereby improving oxidative half-reaction kinetics and boosting visible photocatalytic H₂ production.

Nanofiber Architecture Engineering Implemented by Electrophoretic-Induced Self-Assembly Deposition Technology for Flash-Type Memristors

Electrophoretic deposition (EPD) has been recognized as a promising large-scale film preparation technology for industrial application. Inspired by the conventional EPD method and the crystal diffusion growth strategy, we propose a modified electrophoretic-induced self-assembly deposition (EPAD) technique to control the morphologies of organic functional materials. Here, an ionic-type dye with a conjugated skeleton and strong noncovalent interactions, celestine blue (CB), is chosen as a module molecule for EPAD investigation. As expected, CB molecules can assemble into different nanostructures, dominated by applied voltage, concentration effect, and duration. Compared to a nanopillar layered packing structure formed by the traditional spin-coating method, the EPAD approach can produce a nanofiber structure under a fixed condition of 10 V/10 min. Intriguingly, a memristor device based on a pillar-like nanostructure exhibits WORM-type behavior, while a device based on nanofibers presents Flash memory performance. The assemble process and the memory mechanism are uncovered by molecular dynamics simulations and density-functional theory (DFT) calculations. This work endows the typical EPD technique with a fresh application scenario, where an in-depth study on the growth mechanism of nanofibers and the positive effect of unique morphologies on memristor performance are offered.

Mechanochemically-Assisted Synthesis of Polyimides

Polyimides were obtained in 99 % yield in under 1 h through the "beat and heat" approach, involving solvent-free vibrational ball milling and a thermal treatment step. The influence of a plethora of additives was explored, such as Lewis acids, Lewis bases, and dehydrating agents, and the mechanochemical reaction was identified to run via a polyamic acid intermediate. The protocol was adopted to a range of substrates inaccessible through solution-based processes, including perylene tetracarboxylic acid dianhydride and melamine. Furthermore, quantum chemical calculations were conducted to identify the water removal as the crucial step in the reaction mechanism. The presented method is substantially faster and more versatile than the solution-based process.

Resistive Memory Devices Based on Reticular Materials for Electrical Information Storage

Recently, reticular materials, such as metal-organic frameworks and covalent organic frameworks, have been proposed as an active insulating layer in resistive switching memory systems through their chemically tunable porous structure. A resistive random access memory (RRAM) cell, a digital memristor, is one of the most outstanding emergent memory devices that achieves high-density electrical information storage with variable electrical resistance states between two terminals. The overall design of the RRAM devices comprises an insulating layer sandwiched between two metal electrodes (metal/insulator/metal). RRAM devices with fast switching speeds and enhanced storage density have the potential to be manufactured with excellent scalability owing to their relatively simple device architecture. In this review, recent progress on the development of reticular material-based RRAM devices and the study of their operational mechanisms are reviewed, and new challenges and future perspectives related to reticular material-based RRAM are discussed.

Embedding Azobenzol-Decorated Tetraphenylethylene into the Polymer Matrix to Implement a Ternary Memory Device with High Working Temperature/Humidity

The development of new high-density memories that can work in harsh environments such as high temperature and humidity will be significant for some special occasions such as oil and geothermal industries. Herein, a facial strategy for implementing a ternary memory device with high working temperature/humidity was executed. In detail, an asymmetric aggregation-induced-emission active molecule (azobenzol-decorated tetraphenylethylene, i.e., TPE-Azo) was embedded into flexible poly(ethylene-alt-maleic anhydride) (PEM) to prepare a TPE-Azo@PEM composite, which served as an active layer to fabricate the FTO/TPE-Azo@PEM/Ag device. This device can demonstrate excellent ternary memory performances with a current ratio of 1:10^4.2:10^1.6 for "OFF", "ON1", and "ON2" states. Specially, it can exhibit good environmental endurance at high working temperature (350 °C) and humidity (RH = 90%). The ternary memory mechanism can be explained as the combination of aggregation-induced current/conductance and conformational change-induced charge transfer in the TPE-Azo molecule, which was verified by Kelvin probe force microscopy, UV-vis spectra, X-ray diffraction, and single-crystal structural analysis. This strategy can be used as a universal method for the construction of high-density multilevel memristors with good environmental tolerance.

Chemically Stable Polyarylether-Based Metallophthalocyanine Frameworks with High Carrier Mobilities for Capacitive Energy Storage

Covalent organic frameworks (COFs) with efficient charge transport and exceptional chemical stability are emerging as an import class of semiconducting materials for opto-/electronic devices and energy-related applications. However, the limited synthetic chemistry to access such materials and the lack of mechanistic understanding of carrier mobility greatly hinder their practical applications. Herein, we report the synthesis of three chemically stable polyarylether-based metallophthalocyanine COFs (PAE-PcM, M = Cu, Ni, and Co) and facile in situ growth of their thin films on various substrates (i.e., SiO₂/Si, ITO, quartz) under solvothermal conditions. We show that PAE-PcM COFs thin films with van der Waals layered structures exhibit p-type semiconducting properties with the intrinsic mobility up to ∼19.4 cm² V^-1 s^-1 and 4 orders of magnitude of increase in conductivity for PAE-PcCu film (0.2 S m^-1) after iodine doping. Density functional theory calculations reveal that the carrier transport in the framework is anisotropic, with the out-of-plane hole transport along columnar stacked phthalocyanine more favorable. Furthermore, PAE-PcCo shows the redox behavior maximumly contributes ∼88.5% of its capacitance performance, giving rise to a high surface area normalized capacitance of ∼19 μF cm^-2. Overall, this work not only offers fundamental understandings of electronic properties of polyarylether-based 2D COFs but also paves the way for their energy-related applications.

Towards High-Performance Resistive Switching Behavior through Embedding a D-A System into 2D Imine-Linked Covalent Organic Frameworks

Developing new materials for the fabrication of resistive random-access memory is of great significance in this period of big data. Herein, we present a novel design strategy of embedding donor (D) and acceptor (A) fragments into imine-linked frameworks to construct resistive switching covalent organic frameworks (COFs) for high-performance memristors. Two D-A-type two-dimensional COFs, COF-BT-TT and COF-TT-TVT, were designed and synthesized using a conventional solvothermal approach, and high-quality thin films of these materials deposited on ITO substrate exhibited great potential as an active layer for memristors. Rewritable memristors based on 100 nm thick COF-TT-BT and COF-TT-TVT films showed a high ON/OFF current ratio (ca. 10⁵ and 10⁴ ) and low driving voltage (1.30 and 1.60 V). The cycle period and retention time for COF-TT-BT-based rewritable devices were as high as 319 cycles and 3.3×10⁴  s at a constant voltage of 0.1 V (160 cycles and 1.2×10⁴  s for the COF-TT-TVT memristor).

Effect of a "Zn Bridge" on the Consecutively Tunable Retention Characteristics of Volatile Random Access Memory Materials

Polyimide memory materials with a donor-acceptor structure based on a charge-transfer mechanism exhibit great potential for next-generation information storage technology due to their outstanding high-temperature resistance and good dimensional and chemical stability. Precisely controlling memory performance by limited chemical decoration is one of core challenges in this field. Most reported work mainly focuses on designing novel and elaborate electron donors or acceptors for the expected memory behavior of polyimides; this takes a lot of time and is not always efficacious. Herein, we report a series of porphyrinated copolyimides coPI-Znx (x=5, 10, 20, 50, 80), where x represents the mole percentage of Zn ion in the central core of the porphyrin. Experimental and theoretical analysis indicate that the Zn ion could play a vital bridge role in promoting the formation and stabilization of a charge-transfer complex by enhancing the hybridization of local and charge transfer (HLCT) excitations of porphyrinated polyimides, endowing coPI-Znx with volatile random access memory performance and continuously tunable retention time. This work could provide one simple strategy to precisely regulate memory performance merely by altering the metal content in porphyrinated polyimides.

Emerging new-generation hybrids based on covalent organic frameworks for industrial applications

This review highlights the advancement of COF hybrid-based materials for diverse industrial applications.