Effects of Anisotropic Strain on Spin-Orbit Torque Produced by the Dirac Nodal Line Semimetal IrO2

High-Mobility Carriers in Epitaxial IrO2 Films Grown using Hybrid Molecular Beam Epitaxy

Binary rutile oxides of 5d metals such as IrO2 stand out in comparison to their 3d and 4d counterparts due to limited experimental studies, despite rich predicted quantum phenomena. Here, we investigate the electrical transport properties of IrO2 by engineering epitaxial thin films grown using hybrid molecular beam epitaxy. Our findings reveal phonon-limited carrier transport and thickness-dependent anisotropic in-plane resistance in IrO2 (110) films, the latter suggesting a complex relationship between strain relaxation and orbital hybridization. Magnetotransport measurements reveal a previously unobserved nonlinear Hall effect. A two-carrier analysis of this effect shows the presence of minority carriers with mobility exceeding 3000 cm2/(V s) at 1.8 K. These results point toward emergent properties in 5d metal oxides that can be controlled using dimensionality and epitaxial strain.

Antisymmetric planar Hall effect in rutile oxide films induced by the Lorentz force

The conventional Hall effect is linearly proportional to the field component or magnetization component perpendicular to a film. Despite the increasing theoretical proposals on the Hall effect to the in-plane field or magnetization in various special systems induced by the Berry curvature, such an unconventional Hall effect has only been experimentally reported in Weyl semimetals and in a heterodimensional superlattice. Here, we report an unambiguous experimental observation of the antisymmetric planar Hall effect (APHE) with respect to the in-plane magnetic field in centrosymmetric rutile RuO2 and IrO2 single-crystal films. The measured Hall resistivity is found to be linearly proportional to the component of the applied in-plane magnetic field along a particular crystal axis and to be independent of the current direction or temperature. Both the experimental observations and theoretical calculations confirm that the APHE in rutile oxide films is induced by the Lorentz force. Our findings can be generalized to ferromagnetic materials for the discovery of anomalous Hall effects and quantum anomalous Hall effects induced by in-plane magnetization. In addition to significantly expanding knowledge of the Hall effect, this work opens the door to explore new members in the Hall effect family.

Separation of Inverse Altermagnetic Spin-Splitting Effect from Inverse Spin Hall Effect in RuO_{2}

Recently, a significant amount of attention has been attracted toward a third classification of magnetism, altermagnetism, due to the unique physical properties of altermagnetic materials, which are compensated collinear antiferromagnets that host time-reversal symmetry-breaking phenomena like a ferromagnet. In an altermagnetic material, through the nonrelativistic altermagnetic spin-splitting effect (ASSE), a transverse spin current is generated upon charge current injection. However, it is very challenging to experimentally establish the ASSE since it is inevitably mixed with the spin Hall effect due to the relativistic spin-orbit coupling of the material. Additionally, the dependence on the hard-to-probe and hard-to-control Néel vectors makes it even more difficult to observe and establish the ASSE. In this Letter, we utilize the thermal spin injection from the ferrimagnetic insulator yttrium iron garnet and detect an inverse altermagnetic spin-splitting effect (IASSE) in the high-quality epitaxial altermagnetic RuO_{2} thin films. We observe an opposite sign for the spin-to-charge conversion through the IASSE compared to the inverse spin Hall effect (ISHE). The efficiency of the IASSE is approximately 70% of the ISHE in RuO_{2}. Moreover, we demonstrate that the ASSE or IASSE effect is observable only when the Néel vectors are well aligned. By modifying the Néel vector domains via RuO_{2} crystallinity, we study the ASSE or IASSE unequivocally and quantitatively. Our Letter provides significant insight into the spin-splitting effect in altermagnetic materials.

Inverse Spin Hall Effect Dominated Spin-Charge Conversion in (101) and (110)-Oriented RuO_{2} Films

Utilizing spin pumping, we present a comparative study of the spin-charge conversion in RuO_{2}(101) and RuO_{2}(110) films. RuO_{2}(101) shows a robust in-plane crystal-axis dependence, whereas RuO_{2}(110) exhibits an isotropic but stronger one. Symmetry-based analysis and first-principles calculations reveal that the spin-charge conversion in RuO_{2}(110) originates from the inverse spin Hall effect (ISHE) due to nodal lines splitting. In RuO_{2}(101), the ISHE also dominates although the inverse spin splitting effect (ISSE) may coexist. These findings, in sharp contrast to previously attributed ISSE, are further corroborated by the reciprocal relation between the spin pumping and the spin-torque ferromagnetic resonance measurements.

Recent progress on topological semimetal IrO2: electronic structures, synthesis, and transport properties

5dtransition metal oxides, such as iridates, have attracted significant interest in condensed matter physics throughout the past decade owing to their fascinating physical properties that arise from intrinsically strong spin-orbit coupling (SOC) and its interplay with other interactions of comparable energy scales. Among the rich family of iridates, iridium dioxide (IrO2), a simple binary compound long known as a promising catalyst for water splitting, has recently been demonstrated to possess novel topological states and exotic transport properties. The strong SOC and the nonsymmorphic symmetry that IrO2possesses introduce symmetry-protected Dirac nodal lines (DNLs) within its band structure as well as a large spin Hall effect in the transport. Here, we review recent advances pertaining to the study of this unique SOC oxide, with an emphasis on the understanding of the topological electronic structures, syntheses of high crystalline quality nanostructures, and experimental measurements of its fundamental transport properties. In particular, the theoretical origin of the presence of the fourfold degenerate DNLs in band structure and its implications in the angle-resolved photoemission spectroscopy measurement and in the spin Hall effect are discussed. We further introduce a variety of synthesis techniques to achieve IrO2nanostructures, such as epitaxial thin films and single crystalline nanowires, with the goal of understanding the roles that each key parameter plays in the growth process. Finally, we review the electrical, spin, and thermal transport studies. The transport properties under variable temperatures and magnetic fields reveal themselves to be uniquely sensitive and modifiable by strain, dimensionality (bulk, thin film, nanowire), quantum confinement, film texture, and disorder. The sensitivity, stemming from the competing energy scales of SOC, disorder, and other interactions, enables the creation of a variety of intriguing quantum states of matter.

Engineering metal oxidation using epitaxial strain

The oxides of platinum group metals are promising for future electronics and spintronics due to the delicate interplay of spin-orbit coupling and electron correlation energies. However, their synthesis as thin films remains challenging due to their low vapour pressures and low oxidation potentials. Here we show how epitaxial strain can be used as a control knob to enhance metal oxidation. Using Ir as an example, we demonstrate the use of epitaxial strain in engineering its oxidation chemistry, enabling phase-pure Ir or IrO2 films despite using identical growth conditions. The observations are explained using a density-functional-theory-based modified formation enthalpy framework, which highlights the important role of metal-substrate epitaxial strain in governing the oxide formation enthalpy. We also validate the generality of this principle by demonstrating epitaxial strain effect on Ru oxidation. The IrO2 films studied in our work further revealed quantum oscillations, attesting to the excellent film quality. The epitaxial strain approach we present could enable growth of oxide films of hard-to-oxidize elements using strain engineering.

Symmetry Control of Unconventional Spin-Orbit Torques in IrO2

Spin-orbit torques generated by a spin current are key to magnetic switching in spintronic applications. The polarization of the spin current dictates the direction of switching required for energy-efficient devices. Conventionally, the polarizations of these spin currents are restricted to be along a certain direction due to the symmetry of the material allowing only for efficient in-plane magnetic switching. Unconventional spin-orbit torques arising from novel spin current polarizations, however, have the potential to switch other magnetization orientations such as perpendicular magnetic anisotropy, which is desired for higher density spintronic-based memory devices. Here, it is demonstrated that low crystalline symmetry is not required for unconventional spin-orbit torques and can be generated in a nonmagnetic high symmetry material, iridium dioxide (IrO2 ), using epitaxial design. It is shown that by reducing the relative crystalline symmetry with respect to the growth direction large unconventional spin currents can be generated and hence spin-orbit torques. Furthermore, the spin polarizations detected in (001), (110), and (111) oriented IrO2 thin films are compared to show which crystal symmetries restrict unconventional spin transport. Understanding and tuning unconventional spin transport generation in high symmetry materials can provide a new route towards energy-efficient magnetic switching in spintronic devices.

Enhanced Electron Correlation and Significantly Suppressed Thermal Conductivity in Dirac Nodal-Line Metal Nanowires by Chemical Doping

Enhancing electron correlation in a weakly interacting topological system has great potential to promote correlated topological states of matter with extraordinary quantum properties. Here, the enhancement of electron correlation in a prototypical topological metal, namely iridium dioxide (IrO₂ ), via doping with 3d transition metal vanadium is demonstrated. Single-crystalline vanadium-doped IrO₂ nanowires are synthesized through chemical vapor deposition where the nanowire yield and morphology are improved by creating rough surfaces on substrates. Vanadium doping leads to a dramatic decrease in Raman intensity without notable peak broadening, signifying the enhancement of electron correlation. The enhanced electron correlation is further evidenced by transport studies where the electrical resistivity is greatly increased and follows an unusual T $\sqrt T $ dependence on the temperature (T). The lattice thermal conductivity is suppressed by an order of magnitude via doping even at room temperature where phonon-impurity scattering becomes less important. Density functional theory calculations suggest that the remarkable reduction of thermal conductivity arises from the complex phonon dispersion and reduced energy gap between phonon branches, which greatly enhances phase space for phonon-phonon Umklapp scattering. This work demonstrates a unique system combining 3d and 5d transition metals in isostructural materials to enrich the system with various types of interactions.

Recent development and challenges in fuel cells and water electrolyzer reactions: an overview

Water electrolysis is the most promising method for the production of large scalable hydrogen (H2), which can fulfill the global energy demand of modern society. H2-based fuel cell transportation has been operating with zero greenhouse emission to improve both indoor and outdoor air quality, in addition to the development of economically viable sustainable green energy for widespread electrochemical applications. Many countries have been eagerly focusing on the development of renewable as well as H2-based energy storage infrastructure to fulfill their growing energy demands and sustainable goals. This review article mainly discusses the development of different kinds of fuel cell electrocatalysts, and their application in H2 production through various processes (chemical, refining, and electrochemical). The fuel cell parameters such as redox properties, cost-effectiveness, ecofriendlyness, conductivity, and better electrode stability have also been highlighted. In particular, a detailed discussion has been carried out with sufficient insights into the sustainable development of future green energy economy.

Efficient Tuning of the Spin-Orbit Torque via the Magnetic Phase Transition of FeRh

The understanding and control of the spin-orbit torque (SOT) are central to antiferromagnetic spintronics. Despite the fact that a giant SOT efficiency has been achieved in numerous materials, its efficient tuning in a given material has not been established. Materials with magnetic phase transitions (MPTs) offer a new perspective, as the SOT efficiency may vary significantly for the different magnetic orderings across the transition, and the transition itself can be readily tuned by various control parameters. This work reports that the SOT efficiency of a FeRh-based perpendicular magnetized heterostructure can be significantly tuned by varying the temperature across the MPT. The SOT efficiency exhibits a temperature hysteresis associated with the first-order nature of the MPT, and its value in the ferromagnetic phase is seen to be enhanced by ∼450%, simply by a lowering of temperature to drive FeRh into the antiferromagnetic phase. Furthermore, current-induced magnetization switching can be achieved without an assistant magnetic field for both ferromagnetic and antiferromagnetic FeRh, with a low critical switching current density for the latter. These results not only directly establish FeRh as an efficient spin generator but also present a strategy to dynamically tune SOT via varying the temperature across MPTs.

Observation of Spin Splitting Torque in a Collinear Antiferromagnet RuO_{2}

Current-induced spin torques provide efficient data writing approaches for magnetic memories. Recently, the spin splitting torque (SST) was theoretically predicted, which combines advantages of conventional spin transfer torque (STT) and spin-orbit torque (SOT) as well as enables controllable spin polarization. Here we provide the experimental evidence of SST in collinear antiferromagnet RuO_{2} films. The spin current direction is found to be correlated to the crystal orientation of RuO_{2} and the spin polarization direction is dependent on (parallel to) the Néel vector. These features are quite characteristic for the predicted SST. Our finding not only presents a new member for the spin torques besides traditional STT and SOT, but also proposes a promising spin source RuO_{2} for spintronics.

Dimensionality-driven metal-insulator transition in spin-orbit-coupled IrO2

A metal-insulator transition is observed in spin-orbit-coupled IrO₂ thin films upon reduction of the film thickness. In the epitaxially grown samples, the critical thickness (t ∼ 1.5-2.2 nm) is found to depend on growth orientation (001), (100) or (110). Interestingly from the applied point of view, the insulating behavior is found even in polycrystalline ultrathin films. By analyzing the experimental electrical response with various theoretical models, we find good fits to the Efros-Shklovskii-VRH and the Arrhenius-type behaviors, which suggests an important role of electron correlations in determining the electrical properties of IrO₂. Our magnetic measurements also point to a significant role of magnetic order. Altogether, our results would point to a mixed Slater- and Mott-type of insulator.

Modulation of Spin-Orbit Torque from SrRuO3 by Epitaxial-Strain-Induced Octahedral Rotation

Spin-orbit torque (SOT), which arises from the spin-orbit coupling of conduction electrons, is believed to be the key route for developing low-power, high-speed, and nonvolatile memory devices. Despite the theoretical prediction of pronounced Berry phase curvatures in certain transition-metal perovskite oxides, which lead to considerable intrinsic spin Hall conductivity, SOT from this class of materials has rarely been reported until recently. Here, the SOT generated by epitaxial SrRuO₃ of three different crystal structures is systematically studied. The results of both spin-torque ferromagnetic resonance and in-plane harmonic Hall voltage measurements concurrently reveal that the intrinsic SOT efficiency of SrRuO₃ decreases when the epitaxial strain changes from tensile to compressive. The X-ray diffraction data demonstrate a strong correlation between the magnitude of SOT and octahedral rotation around the in-plane axes of SrRuO₃ , consistent with the theoretical prediction. This work offers new possibilities of tuning SOT with crystal structures and novel opportunities of integrating the unique properties of perovskite oxides with spintronic functionalities.

Strong Crystallographic Influence on Spin Hall Mechanism in PLD-Grown IrO2 Thin Films

Spin-to-charge conversion is a central process in the emerging field of spintronics. One of its main applications is the electrical detection of spin currents, and for this, the inverse spin Hall effect (ISHE) has become one of the preferred methods. We studied the thickness dependence of the ISHE in iridium oxide (IrO2) thin films, producing spin currents by means of the spin Seebeck effect in γ−Fe2O3/IrO2 bilayers prepared by pulsed laser deposition (PLD). The observed ISHE charge current density, which features a maximum as a consequence of the spin diffusion length scale, follows the typical behaviour of spin-Hall-related phenomena. By fitting to the theory developed by Castel et al., we find that the spin Hall angle θSH scales proportionally to the thin film resistivity, θSH∝ρc, and obtains a value for the spin diffusion length λIrO2 of λIrO2=3.3(7) nm. In addition, we observe a negative θSH for every studied thickness and temperature, unlike previously reported works, which brings the possibility of tuning the desired functionality of high-resistance spin-Hall-based devices. We attribute this behaviour to the textured growth of the sample in the context of a highly anisotropic value of the spin Hall conductivity in this material.

Efficient Spin-Orbit Torque Generation in Semiconducting WTe2 with Hopping Transport

Spin-orbit torques (SOTs) from transition metal dichalcogenide systems (TMDs) in conjunction with ferromagnetic materials are recently found to be attractive in spintronics for their versatile features. However, most of the previously studied crystalline TMDs are prepared by mechanical exfoliation, which limits their potentials for industrial applications. Here, we show that amorphous WTe₂ heterostructures deposited by magnetron sputtering possess a sizable damping-like SOT efficiency of ξ_DL^WTe₂ ≈ 0.20 and low damping constant of α = 0.009 ± 0.001. Only an extremely low critical switching current density of J_c≈ 7.05 × 10⁹ A/m² is required to achieve SOT-driven magnetization switching. The SOT efficiency is further proved to depend on the W and Te relative compositions in the co-sputtered W_100-xTe_x samples, from which a sign change of ξ_DL^WTe₂ is observed. In addition, the electronic transport in amorphous WTe₂ is found to be semiconducting and is governed by a hopping mechanism. With the above advantages and rich tunability, amorphous and semiconducting WTe₂ serves as a unique SOT source for future spintronics applications.