Low-Temperature and Large-Scale Production of a Transition Metal Sulfide Vertical Heterostructure and Its Application for Photodetectors

Robust Growth of 2D Transition Metal Dichalcogenide Vertical Heterostructures via Ammonium-Assisted CVD Strategy

Two dimension (2D) transition metal dichalcogenides (TMD) heterostructures have opened unparalleled prospects for next-generation electronic and optoelectronic applications due to their atomic-scale thickness and distinct physical properties. The chemical vapor deposition (CVD) method is the most feasible approach to prepare 2D TMD heterostructures. However, the synthesis of 2D vertical heterostructures faces competition between in-plane and out-of-plane growth, which makes it difficult to precisely control the growth of vertical heterostructures. Here, a universal and controllable strategy is reported to grow various 2D TMD vertical heterostructures through an ammonium-assisted CVD process. The ammonium-assisted strategy shows excellent controllability and operational simplicity to prevent interlayer diffusion/alloying and thermal decomposition of the existed TMD templates. Ab initio simulations demonstrate that the reaction between NH4Cl and MoS2 leads to the formation of MoS3 clusters, promoting the nucleation and growth of 2D MoS2 on existed 2D WS2 layer, thereby leading to the growth of vertical heterostructure. The resulting 2D WSe2/WS2 vertical heterostructure photodetectors demonstrate an outstanding optoelectronic performance, which are comparable to the performances of photodetectors fabricated from mechanically exfoliated and stacked vertical heterostructures. The ammonium-assisted strategy for robust growth of high-quality vertical van der Waals heterostructures will facilitate fundamental physics investigations and device applications in electronics and optoelectronics.

2D compounds with heterolayered architecture for infrared photodetectors

Compounds with heterolayered architecture, as a family of two-dimensional (2D) materials, are composed of alternating positive and negative layers. Their physical properties are determined not only by the charged constituents, but also by the interaction between the two layers. This kind of material has been widely used for superconductivity, thermoelectricity, energy storage, etc. In recent years, heterolayered compounds have been found as an encouraging choice for infrared photodetectors with high sensitivity, fast response, and remarkable reliability. In this review, we summarize the research progress of heterolayered materials for infrared photodetectors. A simple development history of the materials with three-dimensional (3D) or 2D structures, which are suitable for infrared photodetectors, is introduced firstly. Then, we compare the differences between van der Waals layered 2D materials and heterolayered 2D cousins and explain the advantages of heterolayered 2D compounds. Finally, we present our perspective on the future direction of heterolayered 2D materials as an emerging class of materials for infrared photodetectors.

Electron Release via Internal Polarization Fields for Optimal S-H Bonding States

Transition metal dichalcogenides (TMDs) have received considerable attention as promising electrocatalysts for the hydrogen evolution reaction (HER), yet their potential is often constrained by the inertness of the basal planes arising from their poor hydrogen adsorption ability. Here, the relationship between the electronic structure of the WS2 basal plane and HER activity is systemically analyzed to establish a clear insight. The valance state of the sulfur atoms on the basal plane has been tuned to enhance hydrogen adsorption through sequential engineering processes, including direct phase transition and heterostructure that induces work function-difference-induced unidirectional electron transfer. Additionally, an innovative synthetic approach, harnessing the built-in internal polarization field at the W-graphene heterointerface, triggers the in-situ formation of sulfur vacancies in the bottom WSx (x < 2) layers. The resultant modulation of the valance state of the sulfur atom stabilizes the W-S bond, while destabilizing the S-H bond. The electronic structural changes are further amplified by the release and transfer of surplus electrons via sulfur vacancies, filling the valance state of W and S atoms. Consequently, this work provides a comprehensive understanding of the interplay between the electronic structure of the WS2 basal plane and the HER activity, focusing on optimizing S-H bonding state.

Versatile Papertronics: Photo-Induced Synapse and Security Applications on Papers

Paper is a readily available material in nature. Its recyclability, eco-friendliness, portability, flexibility, and affordability make it a favored substrate for researchers seeking cost-effective solutions. Electronic devices based on solution process are fabricated on paper and banknotes using PVK and SnO2 nanoparticles. The devices manufactured on paper substrates exhibit photosynaptic behavior under ultraviolet pulse illumination, stemming from numerous interactions on the surface of the SnO2 nanoparticles. A light-modulated artificial synapse device is realized on a paper at a low voltage bias of -0.01 V, with an average recognition rate of 91.7% based on the Yale Face Database. As a security device on a banknote, 400 devices in a 20 × 20 array configuration exhibited random electrical characteristics owing to the local morphology of the SnO2 nanoparticles and differences in the depletion layer width at the SnO2/PVK interface. The security Physically Unclonable Functions (PUF) key based on the current distribution extracted at -1 V show unpredictable reproducibility with 50% uniformity, 48.7% inter-Hamming distance, and 50.1% bit-aliasing rates. Moreover, the device maintained its properties for more than 210 days under a curvature radius of 8.75 mm and bias and UV irradiation stress conditions.

Janus MoSH/WSi2N4 van der Waals Heterostructure: Two-Dimensional Metal/Semiconductor Contact

Constructing heterostructures from already synthesized two-dimensional materials is of significant importance. We performed a first-principles study to investigate the electronic properties and interfacial characteristics of Janus MoSH/WSi2N4 van der Waals heterostructure (vdWH) contacts. We demonstrate that the p-type Schottky formed by MoSH/WSi2N4 and MoHS/WSi2N4 has extremely low Schottky barrier heights (SBHs). Due to its excellent charge injection efficiency, Janus MoSH may be regarded as an effective metal contact for WSi2N4 semiconductors. Furthermore, the interfacial characteristics and electronic structure of Janus MoSH/WSi2N4 vdWHs can not only reduce/eliminate SBH, but also forms the transition from p-ShC to n-ShC type and from Schottky contact (ShC) to Ohmic contact (OhC) through the layer spacing and electric field. Our results can offer a fresh method for optoelectronic applications based on metal/semiconductor Janus MoSH/WSi2N4 vdW heterostructures, which have strong potential in optoelectronic applications.

Recent Excellent Optoelectronic Applications Based on Two-Dimensional WS2 Nanomaterials: A Review

Tungsten disulfide (WS2) is a promising material with excellent electrical, magnetic, optical, and mechanical properties. It is regarded as a key candidate for the development of optoelectronic devices due to its high carrier mobility, high absorption coefficient, large exciton binding energy, polarized light emission, high surface-to-volume ratio, and tunable band gap. These properties contribute to its excellent photoluminescence and high anisotropy. These characteristics render WS2 an advantageous material for applications in light-emitting devices, memristors, and numerous other devices. This article primarily reviews the most recent advancements in the field of optoelectronic devices based on two-dimensional (2D) nano-WS2. A variety of advanced devices have been considered, including light-emitting diodes (LEDs), sensors, field-effect transistors (FETs), photodetectors, field emission devices, and non-volatile memory. This review provides a guide for improving the application of 2D WS2 through improved methods, such as introducing defects and doping processes. Moreover, it is of great significance for the development of transition-metal oxides in optoelectronic applications.

Ni0.5Co0.5S nano-chains: a high-performing intercalating pseudocapacitive electrode in asymmetric supercapacitor (ASC) mode for the development of large-scale energy storage devices

Grid-scale energy storage solutions are necessary for using renewable energy sources efficiently. A supercapattery (supercapacitor + battery) has recently been introduced as a new variety of hybrid devices that engage both capacitive and faradaic charge storage processes. Nano-chain architectures of Ni0.5Co0.5S electrode materials consisting of interconnected nano-spheres are rationally constructed by tailoring the surface structure. Nano-chains of the bimetallic sulfide Ni0.5Co0.5S are presented to have a superior charge storage capacity. The Ni0.5Co0.5S nano-chain electrode presents a capacitance of 2001.6 F g-1 at 1 mV s-1, with a specific capacity of 267 mA h g-1 (1920 F g-1) at 1 A g-1 in 4 M KOH aqueous electrolyte through the galvanostatic charge-discharge (GCD) method. The reason behind the high charge storage capacity of the materials is the predominant redox-mediated diffusion-controlled pseudocapacitive mechanism coupled with surface capacitance (electrosorption), as the surface (outer) and intercalative (inner) charges stored by the Ni0.5Co0.5S electrodes are close to 46.0% and 54.0%, respectively. Additionally, a Ni0.5Co0.5S//AC two electrode full cell operating in asymmetric supercapacitor cell (ASCs) mode in 4 M KOH electrolyte exhibits an impressive energy density equivalent to 257 W h kg-1 and a power density of 0.73 kW kg-1 at a current rate of 1 A g-1.

Synthesis of multiphase MoS2 heterostructures using temperature-controlled plasma-sulfurization for photodetector applications

Two-dimensional (2D) materials exhibit outstanding performance in photodetectors because of their excellent optical and electronic properties. Specifically, 2D-MoS2, a transition metal dichalcogenide, is a prominent candidate for flexible and portable photodetectors based on its inherent phase-dependent tunable optical band gap properties. This research focused on creating high-performance photodetectors by carefully arranging out-of-plane 2D heterostructures. The process involved stacking different phases of MoS2 (1T and 2H) using controlled temperature during plasma-enhanced chemical vapor deposition. Among the various phase combinations, the best photocurrent response was obtained for the 1T/2H-MoS2 heterostructure, which exhibited an approximately two-fold higher photocurrent than the 2H/1T-MoS2 heterostructure and 2H/2H-MoS2 monostructure. The 1T/2H-MoS2 heterostructure exhibited a higher photoresponse than the monostructured MoS2 of the same thickness (1T/1T- and 2H/2H-MoS2, respectively). The effect of the stacking sequences of different phases was examined, and their photoperformances were investigated. This study demonstrates that phase engineering in 2D-MoS2 van der Waals heterostructures has significant potential for developing high-performance photodetectors.

Determining Band Splitting and Spin-Flip Dynamics in Monolayer MoS2

Femtosecond helicity-resolved pump-probe spectroscopy is performed to study the spin and valley dynamics in monolayer (ML) MoS2. Both the bright to dark intravalley exciton transition (∼50 fs) and the reverse transition process (<50 fs) are directly monitored. It suggests that the bright exciton state of ML MoS2 is lower in energy than the dark one, which is also confirmed by observing the temperature-dependent co-polarized photobleaching dynamics of A and B excitons. Furthermore, the band splitting in the conduction band of ML MoS2 with a value of 15 ± 0.3 meV is determined by fitting the temperature-dependent ratios of the population in bright and dark states using the Boltzmann distribution law. Such minor band splitting allows the phonon-mediated intravalley spin-flip to even occur from the lower to the upper conduction band within tens of femtoseconds, which will have non-negligible effects on the performance of these ML MoS2-based optoelectronic and photonic devices.

Temperature-Dependent Phonon Scattering and Photoluminescence in Vertical MoS2/WSe2 Heterostructures

Transition metal dichalcogenide (TMD) monolayers and their heterostructures have attracted considerable attention due to their distinct properties. In this work, we performed a systematic investigation of MoS2/WSe2 heterostructures, focusing on their temperature-dependent Raman and photoluminescence (PL) characteristics in the range of 79 to 473 K. Our Raman analysis revealed that both the longitudinal and transverse modes of the heterostructure exhibit linear shifts towards low frequencies with increasing temperatures. The peak position and intensity of PL spectra also showed pronounced temperature dependency. The activation energy of thermal-quenching-induced PL emissions was estimated as 61.5 meV and 82.6 meV for WSe2 and MoS2, respectively. Additionally, we observed that the spectral full width at half maximum (FWHM) of Raman and PL peaks increases as the temperature increases, and these broadenings can be attributed to the phonon interaction and the expansion of the heterostructure's thermal coefficients. This work provides valuable insights into the interlayer coupling of van der Waals heterostructures, which is essential for understanding their potential applications in extreme temperatures.

Research Process on Photodetectors based on Group-10 Transition Metal Dichalcogenides

Rapidly evolving group-10 transition metal dichalcogenides (TMDCs) offer remarkable electronic, optical, and mechanical properties, making them promising candidates for advanced optoelectronic applications. Compared to most TMDCs semiconductors, group-10-TMDCs possess unique structures, narrow bandgap, and influential physical properties that motivate the development of broadband photodetectors, specifically infrared photodetectors. This review presents the latest developments in the fabrication of broadband photodetectors based on conventional 2D TMDCs. It mainly focuses on the recent developments in group-10 TMDCs from the perspective of the lattice structure and synthesis techniques. Recent progress in group-10 TMDCs and their heterostructures with different dimensionality of materials-based broadband photodetectors is provided. Moreover, this review accounts for the latest applications of group-10 TMDCs in the fields of nanoelectronics and optoelectronics. Finally, conclusions and outlooks are summarized to provide perspectives for next-generation broadband photodetectors based on group-10 TMDCs.

Recent advances in metal sulfide nanoparticle-added bionanocomposite films for food packaging applications

Metal sulfide nanoparticles have recently attracted much attention due to their unique physical and functional properties. Metal sulfide nanoparticles used as optoelectronic and biomedical materials in the past decades are promising for making functional nanocomposite films due to their low toxicity and strong antibacterial activity. Recently, copper sulfide and zinc sulfide nanomaterials have been used to produce food packaging films for active packaging. Metal sulfide nanoparticles added as nanofillers are attracting attention in packaging applications due to their excellent potential to improve mechanical, barrier properties, and antibacterial activity. This review covers the fabrication process and important applications of metal sulfide nanoparticles. The development of metal sulfides reinforcing mainly copper sulfide and zinc sulfide nanomaterials as multifunctional nanofillers in bio-based films for active packaging applications has been comprehensively reviewed. As the recognition of metal sulfide nanoparticles as a functional filler increases, the development and application potential of active packaging films using them is expected to increase.

Recent Progress in Fabrication and Physical Properties of 2D TMDC-Based Multilayered Vertical Heterostructures

Two-dimensional (2D) vertical heterojunctions (HSs), which are usually fabricated by vertically stacking two layers of transition metal dichalcogenide (TMDC), have been intensively researched during the past years. However, it is still an enormous challenge to achieve controllable preparation of the TMDC trilayer or multilayered van der Waals (vdWs) HSs, which have important effects on physical properties and device performance. In this review, we will introduce fundamental features and various fabrication methods of diverse TMDC-based multilayered vdWs HSs. This review focuses on four fabrication methods of TMDC-based multilayered vdWs HSs, such as exfoliation, chemical vapor deposition (CVD), metal-organic chemical vapor deposition (MOCVD), and pulsed laser deposition (PLD). The latest progress in vdWs HS-related novel physical phenomena are summarized, including interlayer excitons, long photocarrier lifetimes, upconversion photoluminescence, and improved photoelectrochemical catalysis. At last, current challenges and prospects in this research field are provided.

The first progress of plasma-based transition metal dichalcogenide synthesis: a stable 1T phase and promising applications

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted attention as polymorphs depending on their phases (1T and 2H) when applying typical synthesis methods. The 2H phase is generally synthesised through chemical vapour deposition (CVD) on a wafer-scale at high temperatures, and many synthesis methods have been reported owing to their thermodynamic stability and semiconductor properties. By contrast, although the 1T phase is meta-stable with an octahedral coordination, thereby limiting the use of synthesis methods, the recent structural advantage in terms of the hydrogen evolution reaction (HER) has been emphasised. Despite this demand, no large-area thin-film synthesis method for 1T-TMDs has been developed. Among several strategies of synthesizing metallic-phase (1T) TMDs, chemical exfoliation (alkali metal intercalation) is a major strategy and others have been used for electron-beam irradiation, laser irradiation, defects, plasma hot electron transfer, and mechanical strain. Therefore, we suggest an innovative synthesis method using plasma-enhanced CVD (PECVD) for both the 1T and 2H phases of TMDs (MoS2 and WS2). Because ions and radicals are accelerated to the substrate within the sheath region, a high-temperature source is not needed for vapour ionisation, and thus the process temperature can be significantly lowered (150 °C). Moreover, a 4-inch wafer-scale of a thin film is an advantage and can be synthesised on arbitrary substrates (SiO2/Si wafer, glassy carbon electrode, Teflon, and polyimide). Furthermore, the PECVD method was applied to TMD-graphene heterostructure films with a graphene-transferred substrate, and for the first time, sequential metal seed layer depositions of W (1 nm) and Mo (1 nm) were sulfurized to MoS2-WS2 vertical heterostructures with Ar + H2S plasma. We considered the prospects and challenges of the new PECVD method in the development of practical applications in next-generation integrated electronics, HER catalysts, and flexible biosensors.

Synthesis of transition metal dichalcogenide van der Waals heterostructures through chemical vapor deposition

Transition metal dichalcogenide (TMD) van der Waals (vdW) heterostructures show great potential in the exploration of novel physical phenomena and practical applications. Compared to the traditional mechanical stacking techniques, chemical vapor deposition (CVD) method exhibits more advantages in preparing TMD vdW heterostructures. CVD enables the large-scale production of high-quality materials with clean interfaces in the future. Herein, CVD methods for the synthesis of TMD vdW heterostructures are summarized. These methods are categorized in two major strategies, multi-step process and one-step process. The effects of various factors are demonstrated, including the temperature, nucleation, and precursors. Finally, the remaining challenges are discussed.

Transition Metal Dichalcogenides (TMDCs) Heterostructures: Synthesis, Excitons and Photoelectric Properties

Transition metal dichalcogenides (TMDCs) have good flexibility, light absorption, and carrier mobility, and can be used to fabricate wearable devices and photodetectors. In addition, the band gaps of these materials are adjustable, which are related to the number of stacking layers. The the material properties can be changed by vertically stacking TMDCs to form van der Waals (vdW) heterostructures. Compared with single-layer TMDC, the vdW heterostructure has better light response and more efficient photoelectric conversion. Interlayer excitons formed in vdW heterostructure have a longer exciton lifetime and unique valley selectivity compared with intralayer excitons, which promotes the research on TMDCs materials in photoelectric field, valley electronics, carrier dynamics, etc. In this paper, the methods of synthesizing heterostructures are introduced. Photoelectric properties, valley dynamics, electronic properties and related applications of TMDCs vdW heterostructures are also discussed. Heterostructures stacked with different materials, stacking modes, and twist angles all can affect the properties. Hence, it brings more creativity and research direction to the material field.

Correlation between morphology and local mechanical and electrical properties of van der Waals heterostructures

Properties of van der Waals (vdW) heterostructures strongly depend on the quality of the interface between two dimensional (2D) layers. Instead of having atomically flat, clean, and chemically inert interfaces without dangling bonds, top-down vdW heterostructures are associated with bubbles and intercalated layers (ILs) which trap contaminations appeared during fabrication process. We investigate their influence on local electrical and mechanical properties of MoS₂/WS₂heterostructures using atomic force microscopy (AFM) based methods. It is demonstrated that domains containing bubbles and ILs are locally softer, with increased friction and energy dissipation. Since they prevent sharp interfaces and efficient charge transfer between 2D layers, electrical current and contact potential difference are strongly decreased. In order to reestablish a close contact between MoS₂and WS₂layers, vdW heterostructures were locally flattened by scanning with AFM tip in contact mode or just locally pressed with an increased normal load. Subsequent electrical measurements reveal that the contact potential difference between two layers strongly increases due to enabled charge transfer, while localI/Vcurves exhibit increased conductivity without undesired potential barriers.

Concurrent and Selective Determination of Dopamine and Serotonin with Flexible WS2 /Graphene/Polyimide Electrode Using Cold Plasma

Makers of point-of-care devices and wearable diagnostics prefer flexible electrodes over conventional electrodes. In this study, a flexible electrode platform is introduced with a WS₂ /graphene heterostructure on polyimide (WGP) for the concurrent and selective determination of dopamine and serotonin. The WGP is fabricated directly via plasma-enhanced chemical vapor deposition (PECVD) at 150 °C on a flexible polyimide substrate. Owing to the limitations of existing fabrication methods from physical transfer or hydrothermal methods, many studies are not conducted despite excellent graphene-based heterostructures. The PECVD synthesis method can provide an innovative WS₂ /graphene heterostructure of uniform quality and sufficient size (4 in.). This unique heterostructure affords excellent electrical conductivity in graphene and numerous electrochemically active sites in WS₂ . A large number of uniform qualities of WGP electrodes show reproducible and highly sensitive electrochemical results. The synergistic effect enabled well-separated voltammetric signals for dopamine and serotonin with a potential gap of 188 mV. Moreover, the practical application of the flexible sensor is successfully evaluated by using artificial cerebrospinal fluid.

Lattice Defect Engineering Enables Performance-Enhanced MoS2 Photodetection through a Paraelectric BaTiO3 Dielectric

Carrier mobility and density are intrinsically important in nanophoto/electronic devices. High-dielectric-constant coupled polarization-field gate ferroelectrics are frequently studied and partially capable in achieving large-scale tuning of photoresponse, but their light absorption and carrier density seem generally ineffective. This raises questions about whether a similarly high-dielectric-constant paraelectric gate dielectric could enable tuning and how the principles involved could be established. In this study, by deliberately introducing lattice defects in high-dielectric-constant paraelectric, cubic BaTiO₃ (c-BTO) was explored to fabricate MoS₂ photodetectors with ultrahigh detection ability and outstanding field-effect traits. An organic-metal-based spin-coating cum annealing method was used for the c-BTO synthesis, with an optimized thickness (300 nm), by introducing lattice defects properly but maintaining a large dielectric constant (55 at 1k Hz) and low dielectric loss (0.06 at 1k Hz), which renders the enhanced visible-light region absorption. As a result of the synergistically enhanced mobility and photoabsorption, the MoS₂/BTO FET exhibits promising merits, for example, on/off ratio, subthreshold swing, and mobilities for high-performance photodetectors with excellent responsivity (600 AW^-1) and detectivity (1.25 × 10¹² Jones). Thus, this work facilitates the establishment of a lattice defect induced sub-bandgap absorption landmap for synergistically enhanced photoresponse for high-performance photodetector exploration.

Exploring the electronic band gap of Janus MoSeO and WSeO monolayers and their heterostructures

Electronic band structure of TMSeO monolayers.

Recent progress in the CVD growth of 2D vertical heterostructures based on transition-metal dichalcogenides

This review summarizes recent advances in the controllable CVD growth of 2D TMDC vertical heterostructures under four different strategies.