1
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Chai Y, Jiang J, Wu L, Sun Z, Fang S, Shen L, Yao K. Surface Engineering of Perovskite Single Crystals by Atomic Layer Deposited Tin Oxide for Optical Communication. J Phys Chem Lett 2024; 15:3859-3865. [PMID: 38557200 DOI: 10.1021/acs.jpclett.4c00547] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/04/2024]
Abstract
Perovskite single crystals with excellent physical properties have broad prospects in the field of optoelectronics. However, the presence of dangling bonds, surface dislocations, and chemical impurities results in high surface defect density and sensitivity to humidity. Unfortunately, there are relatively few surface engineering strategies for single perovskite single crystals. We present a strategy utilizing atomic layer deposited SnOx to passivate surface defects in perovskite single crystals. The photodetector prepared based on the modified FAPbBr3 single crystals exhibits a low dark current of 1.89 × 10-9 A at a 5 V bias, close to 4 times lower with respect to the pristine device, a high detectivity of 2.3 × 1010 jones, and a fast response time of 27 μs. Moreover, the photodetectors feature long-term operational stability because the presence of a dense SnOx capping layer hinders the ingress of moisture and diffusion of ions. We further demonstrate the promise of our perovskite single crystal detectors for real-time subaqueous optical communication.
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Affiliation(s)
- Yalin Chai
- Institute of Photovoltaics, School of Physics and Materials Science, Nanchang University, Nanchang 330031, China
| | - Jizhong Jiang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, International Center of Future Science, Jilin University, Changchun 130012, China
| | - Long Wu
- Institute of Photovoltaics, School of Physics and Materials Science, Nanchang University, Nanchang 330031, China
| | - Zaicheng Sun
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, International Center of Future Science, Jilin University, Changchun 130012, China
| | - Shanshan Fang
- Institute of Photovoltaics, School of Physics and Materials Science, Nanchang University, Nanchang 330031, China
| | - Liang Shen
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, International Center of Future Science, Jilin University, Changchun 130012, China
| | - Kai Yao
- Institute of Photovoltaics, School of Physics and Materials Science, Nanchang University, Nanchang 330031, China
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2
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García-Fernández A, Kammlander B, Riva S, Rensmo H, Cappel UB. Composition dependence of X-ray stability and degradation mechanisms at lead halide perovskite single crystal surfaces. Phys Chem Chem Phys 2024; 26:1000-1010. [PMID: 38090991 DOI: 10.1039/d3cp05061k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/04/2024]
Abstract
The multiple applications of lead halide perovskite materials and the extensive use of X-ray based techniques to characterize them highlight a need to understand their stability under X-ray irradiation. Here, we present a study where the X-ray stability of five different lead halide perovskite compositions (MAPbI3, MAPbCl3, MAPbBr3, FAPbBr3, CsPbBr3) was investigated using photoelectron spectroscopy. To exclude effects of thin film formation on the observed degradation behaviors, we studied clean surfaces of single crystals. Different X-ray resistance and degradation mechanisms were observed depending on the crystal composition. Overall, perovskites based on the MA+ cation were found to be less stable than those based on FA+ or Cs+. Metallic lead formed most easily in the chloride perovskite, followed by bromide, and only very little metallic lead formation was observed for MAPbI3. MAPbI3 showed one main degradation process, which was the radiolysis of MAI. Multiple simultaneous degradation processes were identified for the bromide compositions. These processes include ion migration towards the perovskite surface and the formation of volatile and solid products in addition to metallic lead. Lastly, CsBr formed as a solid degradation product on the surface of CsPbBr3.
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Affiliation(s)
- Alberto García-Fernández
- Division of Applied Physical Chemistry, Department of Chemistry, KTH - Royal Institute of Technology, 100 44 Stockholm, Sweden.
| | - Birgit Kammlander
- Division of Applied Physical Chemistry, Department of Chemistry, KTH - Royal Institute of Technology, 100 44 Stockholm, Sweden.
- Division of X-ray Photon Science, Department of Physics and Astronomy, Uppsala University, Box 516, 751 20 Uppsala, Sweden
| | - Stefania Riva
- Division of X-ray Photon Science, Department of Physics and Astronomy, Uppsala University, Box 516, 751 20 Uppsala, Sweden
| | - Håkan Rensmo
- Division of X-ray Photon Science, Department of Physics and Astronomy, Uppsala University, Box 516, 751 20 Uppsala, Sweden
| | - Ute B Cappel
- Division of Applied Physical Chemistry, Department of Chemistry, KTH - Royal Institute of Technology, 100 44 Stockholm, Sweden.
- Division of X-ray Photon Science, Department of Physics and Astronomy, Uppsala University, Box 516, 751 20 Uppsala, Sweden
- Wallenberg Initiative Materials Science for Sustainability, Department of Physics and Astronomy, Uppsala University, 751 20 Uppsala, Sweden
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3
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Gui P, Sun Y, Yang L, Xia Z, Wang S, Wang Z, Chen Z, Zeng W, Ren X, Wang S, Fang G. Surface Microstructure Engineering in MAPbBr 3 Microsheets for Performance-Enhanced Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2023; 15:59955-59963. [PMID: 38085577 DOI: 10.1021/acsami.3c15029] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Metal halide-perovskite-based photodetectors have recently emerged as a class of promising optoelectronic devices in various fields. Meanwhile, nano/microstructuring perovskite-based photodetectors are a facile integration with complementary metal-oxide semiconductors for miniaturized imaging systems. However, there are still challenges to be overcome in reducing the losses caused by light reflection on the surface of microstructural perovskites. In this work, surface microstructure engineering is employed in MAPbBr3 microsheets for reducing light reflection and improving light absorption, resulting in high-performance perovskite photodetectors. MAPbBr3 microsheets, which possess different surface morphologies of flat, upright hemisphere arrays and inverted hemisphere arrays (IHAs), are fabricated by a simple microstructure template-assisted space confinement process. The light absorption capacity of IHA MAPbBr3 is significantly higher than that of the other two structures. Hence, IHA photodetectors with excellent figures of merit, including low dark current, decent responsivity, and fast speed, are achieved. Furthermore, the noise of the IHA photodetectors is only ∼10-13 A/H z , which results in the superior sensitivity for weak light detection with a specific detectivity up to 1011 Jones. Our results demonstrate that surface engineering is a simple, low-cost, yet effective approach to improve the performance of nano-/micro-optoelectronic devices.
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Affiliation(s)
- Pengbin Gui
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits, School of Electronic and Information Engineering, Anhui University, Hefei, Anhui 230601, People's Republic of China
| | - Yanming Sun
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits, School of Electronic and Information Engineering, Anhui University, Hefei, Anhui 230601, People's Republic of China
| | - Liangpan Yang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits, School of Electronic and Information Engineering, Anhui University, Hefei, Anhui 230601, People's Republic of China
| | - Zhaosheng Xia
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits, School of Electronic and Information Engineering, Anhui University, Hefei, Anhui 230601, People's Republic of China
| | - Shuxin Wang
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, People's Republic of China
| | - Zhouyin Wang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits, School of Electronic and Information Engineering, Anhui University, Hefei, Anhui 230601, People's Republic of China
| | - Zhiliang Chen
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits, School of Electronic and Information Engineering, Anhui University, Hefei, Anhui 230601, People's Republic of China
| | - Wei Zeng
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits, School of Electronic and Information Engineering, Anhui University, Hefei, Anhui 230601, People's Republic of China
| | - Xingang Ren
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits, School of Electronic and Information Engineering, Anhui University, Hefei, Anhui 230601, People's Republic of China
| | - Siliang Wang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits, School of Electronic and Information Engineering, Anhui University, Hefei, Anhui 230601, People's Republic of China
| | - Guojia Fang
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, People's Republic of China
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4
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Chen Z, Wang H, Li F, Zhang W, Shao Y, Yang S. Ultrasensitive and Robust CsPbBr 3 Single-Crystal X-ray Detectors Based on Interface Engineering. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37883685 DOI: 10.1021/acsami.3c11409] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/28/2023]
Abstract
Halide lead perovskites have shown great development in recent years for ionizing radiation detection. However, the bias-induced interfacial electrochemical reaction between the perovskite and electrode severely deteriorates detector performance. We report that BCP strongly interacts with Al and constructs a stable Al-BCP chelating interface, resulting in the suppression of a detrimental electrochemical reaction. The fabricated Au/Al/BCP/C60/CsPbBr3/Au detector shows a low dark current of 3 nA with a stable baseline at an extremely high bias of 100 V (∼100 V mm-1). The superior high-bias stability enables a high sensitivity of 7.3 × 104 μC Gyair-1 cm-2 at 100 V. Meanwhile, a low detection limit of 15 nGyair s-1 at 40 V is achieved due to the reduced noise. The outstanding performance of our device exceeds that of most advanced detectors based on CsPbBr3 single crystals. Besides, X-ray imaging with 1 mm spatial resolution is well demonstrated at a low dose rate of 200 nGyair s-1. The interfacial chelating strategy overcomes the technical limitation of bias-induced instability of perovskite radiation detectors and can be anticipated to operate under an extremely high electrical field.
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Affiliation(s)
- Zhilong Chen
- Key Laboratory for Ultrafine Materials of Ministry of Education, Shanghai Engineering Research Center of Hierarchical Nanomaterials, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai 201800, China
| | - Hu Wang
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai 201800, China
| | - Fenghua Li
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai 201800, China
| | - Wenqing Zhang
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai 201800, China
| | - Yuchuan Shao
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Key Laboratory of Materials for High Power Laser, Chinese Academy of Sciences, Shanghai 201800, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
| | - Shuang Yang
- Key Laboratory for Ultrafine Materials of Ministry of Education, Shanghai Engineering Research Center of Hierarchical Nanomaterials, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China
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5
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Gidey A, Haruta Y, Herman AP, Grodzicki M, Melnychenko AM, Majchrzak D, Mahato S, Rogowicz E, Syperek M, Kudrawiec R, Saidaminov MI, Abdelhady AL. Surface Engineering of Methylammonium Lead Bromide Perovskite Crystals for Enhanced X-ray Detection. J Phys Chem Lett 2023; 14:9136-9144. [PMID: 37795957 PMCID: PMC10577767 DOI: 10.1021/acs.jpclett.3c02061] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/25/2023] [Accepted: 09/28/2023] [Indexed: 10/06/2023]
Abstract
The surface quality of lead halide perovskite crystals can extremely influence their optoelectronic properties and device performance. Here, we report a surface engineering crystallization technique in which we in situ grow a polycrystalline methylammonium lead tribromide (MAPbBr3) film on top of bulk mm-sized single crystals. Such MAPbBr3 crystals with a MAPbBr3 passivating film display intense green emission under UV light. X-ray photoelectron spectroscopy demonstrates that these crystals with emissive surfaces are compositionally different from typical MAPbBr3 crystals that show no emission under UV light. Time-resolved photoluminescence and electrical measurements indicate that the MAPbBr3 film/MAPbBr3 crystals possess less surface defects compared to the bare MAPbBr3 crystals. Therefore, X-ray detectors fabricated using the surface-engineered MAPbBr3 crystals provide an almost 5 times improved sensitivity to X-rays and a more stable baseline drift with respect to the typical MAPbBr3 crystals.
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Affiliation(s)
- Abraha
Tadese Gidey
- ŁUKASIEWICZ
Research Network PORT-Polish Center for Technology Development, 54-066 Wrocław, Poland
| | - Yuki Haruta
- Department
of Chemistry, University of Victoria, 3800 Finnerty Road, Victoria, British Columbia V8P 5C2, Canada
| | - Artur P. Herman
- Department
of Semiconductor Materials Engineering, Faculty of Fundamental Problems
of Technology, Wrocław University
of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Miłosz Grodzicki
- ŁUKASIEWICZ
Research Network PORT-Polish Center for Technology Development, 54-066 Wrocław, Poland
- Department
of Semiconductor Materials Engineering, Faculty of Fundamental Problems
of Technology, Wrocław University
of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Anna M. Melnychenko
- ŁUKASIEWICZ
Research Network PORT-Polish Center for Technology Development, 54-066 Wrocław, Poland
- Department
of Semiconductor Materials Engineering, Faculty of Fundamental Problems
of Technology, Wrocław University
of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Dominika Majchrzak
- ŁUKASIEWICZ
Research Network PORT-Polish Center for Technology Development, 54-066 Wrocław, Poland
| | - Somnath Mahato
- ŁUKASIEWICZ
Research Network PORT-Polish Center for Technology Development, 54-066 Wrocław, Poland
| | - Ernest Rogowicz
- Department
of Experimental Physics, Wrocław University
of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Marcin Syperek
- Department
of Experimental Physics, Wrocław University
of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Robert Kudrawiec
- ŁUKASIEWICZ
Research Network PORT-Polish Center for Technology Development, 54-066 Wrocław, Poland
- Department
of Semiconductor Materials Engineering, Faculty of Fundamental Problems
of Technology, Wrocław University
of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Makhsud I. Saidaminov
- Department
of Chemistry, University of Victoria, 3800 Finnerty Road, Victoria, British Columbia V8P 5C2, Canada
- Department
of Electrical & Computer Engineering, University of Victoria, 3800 Finnerty Road, Victoria, British Columbia V8P 5C2, Canada
- Centre for
Advanced Materials and Related Technologies (CAMTEC), University of Victoria, 3800 Finnerty Road, Victoria, British Columbia V8P 5C2, Canada
| | - Ahmed L. Abdelhady
- ŁUKASIEWICZ
Research Network PORT-Polish Center for Technology Development, 54-066 Wrocław, Poland
- Department
of Chemistry, Khalifa University, P.O. Box 127788, Abu Dhabi, United Arab Emirates
- Advanced
Materials Chemistry Center (AMCC), Khalifa
University, P.O. Box 127788, Abu Dhabi, United Arab Emirates
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6
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Park B, Ko J, Byun J, Pandey S, Park B, Kim J, Lee MJ. Solution-Grown MAPbBr 3 Single Crystals for Self-Powered Detection of X-rays with High Energies above One Megaelectron Volt. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2157. [PMID: 37570475 PMCID: PMC10421116 DOI: 10.3390/nano13152157] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/10/2023] [Revised: 07/21/2023] [Accepted: 07/22/2023] [Indexed: 08/13/2023]
Abstract
Perovskite single crystals are actively studied as X-ray detection materials with enhanced sensitivity. Moreover, the feasibility of using perovskites for self-powered devices such as photodetectors, UV detectors, and X-ray detectors can significantly expand their application range. In this work, the charge carrier transport and photocurrent properties of MAPbBr3 single crystals (MSCs) are improved by the mechanochemical surface treatment using glycerin combined with an additional electrode design that forms an ohmic contact. The sensitivity of MSC-based detectors and pulse shape generated by X-rays are enhanced at various bias voltages. The synthesized MSC detectors generate direction-dependent photocurrents, which indicate the presence of a polarization-induced internal electric field. In addition, photocurrent signals are produced by X-rays with energies greater than 1 MeV under a zero-bias voltage. This work demonstrates a high application potential of perovskites as self-powered detectors for X-rays with energies exceeding 1 MeV.
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Affiliation(s)
- Beomjun Park
- Department of Chemistry, Konkuk University, Seoul 05029, Republic of Korea
- Advanced Crystal Material/Device Research Center, Konkuk University, Seoul 05029, Republic of Korea
| | - Juyoung Ko
- Department of Chemistry, Konkuk University, Seoul 05029, Republic of Korea
| | - Jangwon Byun
- Department of Chemistry, Konkuk University, Seoul 05029, Republic of Korea
| | - Sandeep Pandey
- Department of Chemistry, Konkuk University, Seoul 05029, Republic of Korea
- Advanced Crystal Material/Device Research Center, Konkuk University, Seoul 05029, Republic of Korea
| | - Byungdo Park
- Department of Radiation Oncology, Samsung Changwon Hospital, Sungkyunkwan University School of Medicine, Changwon 51353, Republic of Korea
| | - Jeongho Kim
- Department of Radiation Oncology, Samsung Changwon Hospital, Sungkyunkwan University School of Medicine, Changwon 51353, Republic of Korea
| | - Man-Jong Lee
- Department of Chemistry, Konkuk University, Seoul 05029, Republic of Korea
- Advanced Crystal Material/Device Research Center, Konkuk University, Seoul 05029, Republic of Korea
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7
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Zhang Z, Kim W, Ko MJ, Li Y. Perovskite single-crystal thin films: preparation, surface engineering, and application. NANO CONVERGENCE 2023; 10:23. [PMID: 37212959 PMCID: PMC10203094 DOI: 10.1186/s40580-023-00373-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/18/2023] [Accepted: 05/08/2023] [Indexed: 05/23/2023]
Abstract
Perovskite single-crystal thin films (SCTFs) have emerged as a significant research hotspot in the field of optoelectronic devices owing to their low defect state density, long carrier diffusion length, and high environmental stability. However, the large-area and high-throughput preparation of perovskite SCTFs is limited by significant challenges in terms of reducing surface defects and manufacturing high-performance devices. This review focuses on the advances in the development of perovskite SCTFs with a large area, controlled thickness, and high quality. First, we provide an in-depth analysis of the mechanism and key factors that affect the nucleation and crystallization process and then classify the methods of preparing perovskite SCTFs. Second, the research progress on surface engineering for perovskite SCTFs is introduced. Third, we summarize the applications of perovskite SCTFs in photovoltaics, photodetectors, light-emitting devices, artificial synapse and field-effect transistor. Finally, the development opportunities and challenges in commercializing perovskite SCTFs are discussed.
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Affiliation(s)
- Zemin Zhang
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology (MoE), Nankai University, Tianjin, 300350, China
| | - Wooyeon Kim
- Department of Chemical Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea
| | - Min Jae Ko
- Department of Chemical Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea.
| | - Yuelong Li
- Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Optoelectronics Technology (MoE), Nankai University, Tianjin, 300350, China.
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8
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Xue Z, Wei Y, Li H, Peng J, Yao F, Liu Y, Wang S, Zhou Q, Lin Q, Wang Z. Additive-Enhanced Crystallization of Inorganic Perovskite Single Crystals for High-Sensitivity X-Ray Detection. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2207588. [PMID: 36721070 DOI: 10.1002/smll.202207588] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2022] [Revised: 01/03/2023] [Indexed: 05/04/2023]
Abstract
Inorganic cesium lead halide perovskite single crystals are particularly intriguing to ionizing radiation detection by virtue of their material stability and high attenuation coefficients. However, the growth of high-quality inorganic perovskite single crystals remains challenging, mainly due to the limited solubility. In this work, an additive-enhanced crystallization method is proposed for cesium lead perovskites. The additive can remarkably increase the solubility of cesium bromide in dimethyl sulfoxide (DMSO) forming a balanced stoichiometric precursor solution, which prevents the formation of impurity phases. In addition, the additives would react with DMSO generating glyoxylic acid (GLA) via nucleophilic substitution and Kornblum oxidation reactions. The GLA can form stable PbBr2 -DMSO-GLA complexes, which enables better crystallinity, uniformity and much longer carrier lifetimes for the grown single crystals. The X-ray detectors using the additive-enhanced crystals exhibit an ultra-high sensitivity of 3.0 × 104 µC Gyair -1 cm-2 which is more than two orders of magnitude higher than that for the control devices.
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Affiliation(s)
- Zexu Xue
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Hubei Luojia Laboratory, Wuhan University, Wuhan, 430072, China
| | - Yingrui Wei
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Hubei Luojia Laboratory, Wuhan University, Wuhan, 430072, China
| | - Hao Li
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Hubei Luojia Laboratory, Wuhan University, Wuhan, 430072, China
| | - Jiali Peng
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Hubei Luojia Laboratory, Wuhan University, Wuhan, 430072, China
| | - Fang Yao
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Hubei Luojia Laboratory, Wuhan University, Wuhan, 430072, China
| | - Yong Liu
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Hubei Luojia Laboratory, Wuhan University, Wuhan, 430072, China
| | - Sheng Wang
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Hubei Luojia Laboratory, Wuhan University, Wuhan, 430072, China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China
| | - Qianghui Zhou
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan, 430072, China
| | - Qianqian Lin
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Hubei Luojia Laboratory, Wuhan University, Wuhan, 430072, China
| | - Zhiping Wang
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Hubei Luojia Laboratory, Wuhan University, Wuhan, 430072, China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China
- School of Microelectronics, Wuhan University, Wuhan, 430072, China
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9
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Jiang W, Ren J, Li H, Liu D, Yang L, Xiong Y, Zhao Y. Improving the Performance and High-Field Stability of FAPbBr 3 Single Crystals in X-Ray Detection with Chenodeoxycholic Acid Additive. SMALL METHODS 2023; 7:e2201636. [PMID: 36732853 DOI: 10.1002/smtd.202201636] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/09/2022] [Revised: 01/12/2023] [Indexed: 06/18/2023]
Abstract
Organometal halide perovskite single crystals are one of the most promising radiation detection materials due to their unique advantages of high absorption coefficient, long carrier diffusion length, and low defect density. However, the severe ion migration in perovskites deteriorates the X-ray detection performance under longtime and high-field operating conditions. This work reports an effective additive of chenodeoxycholic acid (CDCA), which can suppress the ion migration and improve the performance and the operational stability of FAPbBr3 single crystals (SCs) in X-ray detection significantl. The CDCA molecules in precursors effectively suppress the decomposition of FA ions, resulting in a better crystal orientation and stoichiometry. The trace amounts of CDCA residues in FAPbBr3 SCs improve the thermal stability and effectively suppress the ion migration. The resulting detector shows an impressive X-ray sensitivity up to 21 386.88 µC Gyair -1 cm-2 under -500 V and a detection limit of 15.23 nGyair s-1 . The response current of the detector at 225 V cm-1 field is barely changed under the 7200 s irradiation with a dose rate of 1.949 mGyair s-1 . This work provides insights for the additive selection and improving the operational stability of perovskite single crystals for commercial applications.
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Affiliation(s)
- Wei Jiang
- Institute of Materials, China Academy of Engineering Physics, Jiangyou, 621908, China
| | - Jiwei Ren
- Institute of Materials, China Academy of Engineering Physics, Jiangyou, 621908, China
| | - Haibin Li
- Institute of Materials, China Academy of Engineering Physics, Jiangyou, 621908, China
| | - Dan Liu
- Institute of Materials, China Academy of Engineering Physics, Jiangyou, 621908, China
| | - Lijun Yang
- Institute of Materials, China Academy of Engineering Physics, Jiangyou, 621908, China
| | - Ying Xiong
- State Key Laboratory for Environment-Friendly Energy Materials, Southwest University of Science & Technology, Mianyang, 621010, China
| | - Yiying Zhao
- Institute of Materials, China Academy of Engineering Physics, Jiangyou, 621908, China
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10
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Ma F, Huang Z, Ziółek M, Yue S, Han X, Rong D, Guo Z, Chu K, Jia X, Wu Y, Zhao J, Liu K, Xing J, Wang Z, Qu S. Template-Assisted Synthesis of a Large-Area Ordered Perovskite Nanowire Array for a High-Performance Photodetector. ACS APPLIED MATERIALS & INTERFACES 2023; 15:12024-12031. [PMID: 36812095 DOI: 10.1021/acsami.2c20887] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
One-dimensional (1D) organic-inorganic hybrid perovskite nanowires (NWs) with well-defined structures possess superior optical and electrical properties for optoelectronic applications. However, most of the perovskite NWs are synthesized in air, which makes the NWs susceptible to water vapor, resulting in large amounts of grain boundaries or surface defects. Here, a template-assisted antisolvent crystallization (TAAC) method is designed to fabricate CH3NH3PbBr3 NWs and arrays. It is found that the as-synthesized NW array has designable shapes, low crystal defects, and ordered alignment, which is attributed to the sequestration of water and oxygen in air by the introduction of acetonitrile vapor. The photodetector based on the NWs exhibits an excellent response to light illumination. Under the illumination of a 532 nm laser with 0.1 μW and a bias of -1 V, the responsivity and detectivity of the device reach 1.55 A/W and 1.21 × 1012 Jones, respectively. The transient absorption spectrum (TAS) shows a distinct ground state bleaching signal only at 527 nm, which corresponds to the absorption peak induced by the interband transition of CH3NH3PbBr3. Narrow absorption peaks (a few nanometers) indicate that the energy-level structures of CH3NH3PbBr3 NWs only have a few impurity-level-induced transitions leading to additional optical loss. This work provides an effective and simple strategy to achieve high-quality CH3NH3PbBr3 NWs, which exhibit potential application in photodetection.
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Affiliation(s)
- Fangyuan Ma
- School of Science, China University of Geosciences, Beijing 100083, China
- Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
| | - Zhitao Huang
- Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Marcin Ziółek
- Faculty of Physics, Adam Mickiewicz University Poznan, 61-614 Poznan, Poland
| | - Shizhong Yue
- Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xu Han
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Dongke Rong
- School of Science, China University of Geosciences, Beijing 100083, China
| | - Zihao Guo
- School of Science, China University of Geosciences, Beijing 100083, China
| | - Kaiwen Chu
- Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiaohao Jia
- Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yulin Wu
- Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jing Zhao
- Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Kong Liu
- Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jie Xing
- School of Science, China University of Geosciences, Beijing 100083, China
| | - Zhijie Wang
- Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shengchun Qu
- Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China
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Ning S, Duan F, Zhang N, Dai K, He J, Liu Z, Wang S, Zhang F. High-performance all-inorganic CsPbBr 3 quantum dots with a low-threshold amplified spontaneous emission. OPTICS EXPRESS 2023; 31:301-312. [PMID: 36606968 DOI: 10.1364/oe.477912] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/11/2022] [Accepted: 11/29/2022] [Indexed: 06/17/2023]
Abstract
All-inorganic halide perovskite CsPbX3(X = Br/Cl/I)quantum dots have gained a considerable attention in the optoelectronic fields. However, the high cost and poor stability of the prepared CsPbX3 quantum dots (QDs) are inevitable challenges for their future practical applications. And the high-performance CsPbX3 QDs are always needed. Herein, a facile and low-cost synthesis scheme was adopted to prepare the CsPbBr3 QDs modified by lead bromide (PbBr2) and tetraoctylammonium bromide (TOAB) ligands at room temperature in open air. The prepared CsPbBr3 QDs exhibited a high photoluminescence quantum yield (PLQY) of 96.6% and a low amplified spontaneous emission (ASE) threshold of 12.6 µJ/cm2. Stable ASE intensity with little degradation was also realized from the CsPbBr3 QDs doped with PMMA. Furthermore, the enhanced ASE properties of the CsPbBr3 QDs-doped PMMA based on distributed feedback (DFB) substrate was achieved with a lower threshold of 3.6 µJ/cm2, which is 28.6% of that of the (PbBr2 + TOAB)-treated CsPbBr3 QDs without PMMA. This work exhibits a promising potential in the on-chip light source.
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Gong Y, Ye F, Zhu Q, Yan W, Shen J, Xue KH, Zhu Y, Li C. Highly stable halide perovskites for photocatalysis via multi-dimensional structure design and in situ phase transition. Dalton Trans 2022; 51:11316-11324. [PMID: 35833651 DOI: 10.1039/d2dt01639g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Lead halide perovskite CsPbBr3 quantum dots (QDs) possess several desirable features which enable them to be promising candidates for photocatalysis. However, the instability caused by their inherent liquid-like ionic properties hampers their further development. Herein, this work employs the surficial molecular modification strategy and a multi-dimensional structure design to ease the instability issue. The additive 2-phenylethanamine bromide (PEABr) can serve as a ligand to compensate for stripping the amine ligands and passivate the surficial bromide vacancy defects of CsPbBr3 QDs in photocatalysis. In addition, PEABr acts as a reactant to form 2D and quasi-2D perovskite nanosheets. The addition of a small amount of these nanosheets into QDs can enhance their general stability due to their unique layered structures. Moreover, PEABr can trigger the phase transition of cubic CsPbBr3 into tetragonal CsPb2Br5. The newly formed Z-scheme homologous heterojunctions further improve the catalytic performance. Simulated photocatalytic dynamics reveals that our multi-dimensional structure favors decreasing the reaction barrier energy and then facilitating the photocatalytic reaction. Therefore, the electron consumption rate of our multi-dimensional perovskites doubles that of pristine CsPbBr3 QDs and also has superior long-term stability.
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Affiliation(s)
- Yiqin Gong
- Shanghai Engineering Research Centre of Hierarchical Nanomaterials, Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China.
| | - Fan Ye
- School of Optical and Electronic Information, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Qiliang Zhu
- Shanghai Engineering Research Centre of Hierarchical Nanomaterials, Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China.
| | - Wei Yan
- Shanghai Engineering Research Centre of Hierarchical Nanomaterials, Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China.
| | - Jianhua Shen
- Shanghai Engineering Research Centre of Hierarchical Nanomaterials, Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China.
| | - Kan-Hao Xue
- School of Optical and Electronic Information, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Yihua Zhu
- Shanghai Engineering Research Centre of Hierarchical Nanomaterials, Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China.
| | - Chunzhong Li
- Shanghai Engineering Research Centre of Hierarchical Nanomaterials, Key Laboratory for Ultrafine Materials of Ministry of Education, School of Materials Science and Engineering, East China University of Science and Technology, Shanghai 200237, China.
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13
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Defect Healing of MAPbI3 Perovskite Single Crystal Surface by Benzylamine. Symmetry (Basel) 2022. [DOI: 10.3390/sym14061099] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022] Open
Abstract
Controlling the surface traps in metal halide perovskites (MHPs) is essential for device performance, stability, and commercialization. Here, a facile approach is introduced to passivate the methylammonium lead iodide (MAPbI3) perovskite single crystal (PSC) surface defects by benzylamine (BA) ligand treatment, and the natural crystallographic (100) facets surface of PSC is chosen as the research platform to provide a deeper understanding of the passivation process. The confocal photoluminescence (PL) results show that the pristine three-dimensional (3D) MAPbI3 PSC surface with a symmetric emission spectrum is normally converted to a pure two-dimensional (2D) BA2PbI4, and also forms a quasi-2D Ruddlesden–Popper perovskite (RPP) BA2MAn−1PbnI3n+1 (n = 2, 3, 4, … ∞) after BA exchange with cation defects. The blue shift in the PL peak, as well as the extended exciton lifetimes of time-resolved photoluminescence (TRPL), indicate the realization of surface defect passivation. Additionally, changes in surface morphology are also investigated. The reaction starts with the formation of small, layered crystallites over the surface; as time elapses, the layered crystallites spread and merge in contact with each other, eventually resulting in smooth features. Our findings present a simple approach for MAPbI3 PSC surface defect passivation, which aims to advance MHP optimization processes toward practical perovskite device applications.
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