1
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Holewa P, Vajner DA, Zięba-Ostój E, Wasiluk M, Gaál B, Sakanas A, Burakowski M, Mrowiński P, Krajnik B, Xiong M, Yvind K, Gregersen N, Musiał A, Huck A, Heindel T, Syperek M, Semenova E. High-throughput quantum photonic devices emitting indistinguishable photons in the telecom C-band. Nat Commun 2024; 15:3358. [PMID: 38637520 PMCID: PMC11026509 DOI: 10.1038/s41467-024-47551-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/25/2023] [Accepted: 04/05/2024] [Indexed: 04/20/2024] Open
Abstract
Single indistinguishable photons at telecom C-band wavelengths are essential for quantum networks and the future quantum internet. However, high-throughput technology for single-photon generation at 1550 nm remained a missing building block to overcome present limitations in quantum communication and information technologies. Here, we demonstrate the high-throughput fabrication of quantum-photonic integrated devices operating at C-band wavelengths based on epitaxial semiconductor quantum dots. Our technique enables the deterministic integration of single pre-selected quantum emitters into microcavities based on circular Bragg gratings. Respective devices feature the triggered generation of single photons with ultra-high purity and record-high photon indistinguishability. Further improvements in yield and coherence properties will pave the way for implementing single-photon non-linear devices and advanced quantum networks at telecom wavelengths.
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Affiliation(s)
- Paweł Holewa
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370, Wrocław, Poland.
- DTU Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark, Ørsteds Plads 343, DK-2800, Kongens Lyngby, Denmark.
- NanoPhoton - Center for Nanophotonics, Technical University of Denmark, Ørsteds Plads 345A, DK-2800, Kongens Lyngby, Denmark.
| | - Daniel A Vajner
- Institute of Solid State Physics, Technische Universität Berlin, 10623, Berlin, Germany
| | - Emilia Zięba-Ostój
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370, Wrocław, Poland
| | - Maja Wasiluk
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370, Wrocław, Poland
| | - Benedek Gaál
- DTU Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark, Ørsteds Plads 343, DK-2800, Kongens Lyngby, Denmark
| | - Aurimas Sakanas
- DTU Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark, Ørsteds Plads 343, DK-2800, Kongens Lyngby, Denmark
| | - Marek Burakowski
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370, Wrocław, Poland
| | - Paweł Mrowiński
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370, Wrocław, Poland
| | - Bartosz Krajnik
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370, Wrocław, Poland
| | - Meng Xiong
- DTU Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark, Ørsteds Plads 343, DK-2800, Kongens Lyngby, Denmark
- NanoPhoton - Center for Nanophotonics, Technical University of Denmark, Ørsteds Plads 345A, DK-2800, Kongens Lyngby, Denmark
| | - Kresten Yvind
- DTU Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark, Ørsteds Plads 343, DK-2800, Kongens Lyngby, Denmark
- NanoPhoton - Center for Nanophotonics, Technical University of Denmark, Ørsteds Plads 345A, DK-2800, Kongens Lyngby, Denmark
| | - Niels Gregersen
- DTU Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark, Ørsteds Plads 343, DK-2800, Kongens Lyngby, Denmark
| | - Anna Musiał
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370, Wrocław, Poland
| | - Alexander Huck
- Center for Macroscopic Quantum States (bigQ), Department of Physics, Technical University of Denmark, DK-2800, Kongens Lyngby, Denmark
| | - Tobias Heindel
- Institute of Solid State Physics, Technische Universität Berlin, 10623, Berlin, Germany
| | - Marcin Syperek
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370, Wrocław, Poland.
| | - Elizaveta Semenova
- DTU Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark, Ørsteds Plads 343, DK-2800, Kongens Lyngby, Denmark.
- NanoPhoton - Center for Nanophotonics, Technical University of Denmark, Ørsteds Plads 345A, DK-2800, Kongens Lyngby, Denmark.
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2
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Burakowski M, Holewa P, Mrowiński P, Sakanas A, Musiał A, Sȩk G, Yvind K, Semenova E, Syperek M. Heterogeneous integration of single InAs/InP quantum dots with the SOI chip using direct bonding. Opt Express 2024; 32:10874-10886. [PMID: 38570950 DOI: 10.1364/oe.515223] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/08/2023] [Accepted: 02/09/2024] [Indexed: 04/05/2024]
Abstract
Quantum information processing with photons in small-footprint and highly integrated silicon-based photonic chips requires incorporating non-classical light sources. In this respect, self-assembled III-V semiconductor quantum dots (QDs) are an attractive solution, however, they must be combined with the silicon platform. Here, by utilizing the large-area direct bonding technique, we demonstrate the hybridization of InP and SOI chips, which allows for coupling single photons to the SOI chip interior, offering cost-effective scalability in setting up a multi-source environment for quantum photonic chips. We fabricate devices consisting of self-assembled InAs QDs embedded in the tapered InP waveguide (WG) positioned over the SOI-defined Si WG. Focusing on devices generating light in the telecom C-band compatible with the low-loss optical fiber networks, we demonstrate the light coupling between InP and SOI platforms by observing photons outcoupled at the InP-made circular Bragg grating outcoupler fabricated at the end of an 80 µm-long Si WG, and at the cleaved edge of the Si WG. Finally, for a device with suppressed multi-photon generation events exhibiting 80% single photon generation purity, we measure the photon number outcoupled at the cleaved facet of the Si WG. We estimate the directional on-chip photon coupling between the source and the Si WG to 5.1%.
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3
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Vajner D, Holewa P, Zięba-Ostój E, Wasiluk M, von Helversen M, Sakanas A, Huck A, Yvind K, Gregersen N, Musiał A, Syperek M, Semenova E, Heindel T. On-Demand Generation of Indistinguishable Photons in the Telecom C-Band Using Quantum Dot Devices. ACS Photonics 2024; 11:339-347. [PMID: 38405394 PMCID: PMC10885198 DOI: 10.1021/acsphotonics.3c00973] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/11/2023] [Revised: 12/22/2023] [Accepted: 12/26/2023] [Indexed: 02/27/2024]
Abstract
Semiconductor quantum dots (QDs) enable the generation of single and entangled photons, which are useful for various applications in photonic quantum technologies. Specifically for quantum communication via fiber-optical networks, operation in the telecom C-band centered around 1550 nm is ideal. The direct generation of QD-photons in this spectral range with high quantum-optical quality, however, remained challenging. Here, we demonstrate the coherent on-demand generation of indistinguishable photons in the telecom C-band from single QD devices consisting of InAs/InP QD-mesa structures heterogeneously integrated with a metallic reflector on a silicon wafer. Using pulsed two-photon resonant excitation of the biexciton-exciton radiative cascade, we observe Rabi rotations up to pulse areas of 4π and a high single-photon purity in terms of g(2)(0) = 0.005(1) and 0.015(1) for exciton and biexciton photons, respectively. Applying two independent experimental methods, based on fitting Rabi rotations in the emission intensity and performing photon cross-correlation measurements, we consistently obtain preparation fidelities at the π-pulse exceeding 80%. Finally, performing Hong-Ou-Mandel-type two-photon interference experiments, we obtain a photon-indistinguishability of the full photon wave packet of up to 35(3)%, representing a significant advancement in the photon-indistinguishability of single photons emitted directly in the telecom C-band.
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Affiliation(s)
- Daniel
A. Vajner
- Institute
of Solid State Physics, Technical University
of Berlin, 10623 Berlin, Germany
| | - Paweł Holewa
- Department
of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370 Wrocław, Poland
- DTU
Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark, Kongens Lyngby 2800, Denmark
- NanoPhoton
− Center for Nanophotonics, Technical
University of Denmark, 2800 Kongens Lyngby, Denmark
| | - Emilia Zięba-Ostój
- Department
of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Maja Wasiluk
- Department
of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Martin von Helversen
- Institute
of Solid State Physics, Technical University
of Berlin, 10623 Berlin, Germany
| | - Aurimas Sakanas
- DTU
Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark, Kongens Lyngby 2800, Denmark
| | - Alexander Huck
- Center
for Macroscopic Quantum States (bigQ), Department of Physics, Technical University of Denmark, 2800 Kongens Lyngby, Denmark
| | - Kresten Yvind
- DTU
Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark, Kongens Lyngby 2800, Denmark
- NanoPhoton
− Center for Nanophotonics, Technical
University of Denmark, 2800 Kongens Lyngby, Denmark
| | - Niels Gregersen
- DTU
Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark, Kongens Lyngby 2800, Denmark
| | - Anna Musiał
- Department
of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Marcin Syperek
- Department
of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Elizaveta Semenova
- DTU
Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark, Kongens Lyngby 2800, Denmark
- NanoPhoton
− Center for Nanophotonics, Technical
University of Denmark, 2800 Kongens Lyngby, Denmark
| | - Tobias Heindel
- Institute
of Solid State Physics, Technical University
of Berlin, 10623 Berlin, Germany
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4
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Gidey A, Haruta Y, Herman AP, Grodzicki M, Melnychenko AM, Majchrzak D, Mahato S, Rogowicz E, Syperek M, Kudrawiec R, Saidaminov MI, Abdelhady AL. Surface Engineering of Methylammonium Lead Bromide Perovskite Crystals for Enhanced X-ray Detection. J Phys Chem Lett 2023; 14:9136-9144. [PMID: 37795957 PMCID: PMC10577767 DOI: 10.1021/acs.jpclett.3c02061] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/25/2023] [Accepted: 09/28/2023] [Indexed: 10/06/2023]
Abstract
The surface quality of lead halide perovskite crystals can extremely influence their optoelectronic properties and device performance. Here, we report a surface engineering crystallization technique in which we in situ grow a polycrystalline methylammonium lead tribromide (MAPbBr3) film on top of bulk mm-sized single crystals. Such MAPbBr3 crystals with a MAPbBr3 passivating film display intense green emission under UV light. X-ray photoelectron spectroscopy demonstrates that these crystals with emissive surfaces are compositionally different from typical MAPbBr3 crystals that show no emission under UV light. Time-resolved photoluminescence and electrical measurements indicate that the MAPbBr3 film/MAPbBr3 crystals possess less surface defects compared to the bare MAPbBr3 crystals. Therefore, X-ray detectors fabricated using the surface-engineered MAPbBr3 crystals provide an almost 5 times improved sensitivity to X-rays and a more stable baseline drift with respect to the typical MAPbBr3 crystals.
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Affiliation(s)
- Abraha
Tadese Gidey
- ŁUKASIEWICZ
Research Network PORT-Polish Center for Technology Development, 54-066 Wrocław, Poland
| | - Yuki Haruta
- Department
of Chemistry, University of Victoria, 3800 Finnerty Road, Victoria, British Columbia V8P 5C2, Canada
| | - Artur P. Herman
- Department
of Semiconductor Materials Engineering, Faculty of Fundamental Problems
of Technology, Wrocław University
of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Miłosz Grodzicki
- ŁUKASIEWICZ
Research Network PORT-Polish Center for Technology Development, 54-066 Wrocław, Poland
- Department
of Semiconductor Materials Engineering, Faculty of Fundamental Problems
of Technology, Wrocław University
of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Anna M. Melnychenko
- ŁUKASIEWICZ
Research Network PORT-Polish Center for Technology Development, 54-066 Wrocław, Poland
- Department
of Semiconductor Materials Engineering, Faculty of Fundamental Problems
of Technology, Wrocław University
of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Dominika Majchrzak
- ŁUKASIEWICZ
Research Network PORT-Polish Center for Technology Development, 54-066 Wrocław, Poland
| | - Somnath Mahato
- ŁUKASIEWICZ
Research Network PORT-Polish Center for Technology Development, 54-066 Wrocław, Poland
| | - Ernest Rogowicz
- Department
of Experimental Physics, Wrocław University
of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Marcin Syperek
- Department
of Experimental Physics, Wrocław University
of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Robert Kudrawiec
- ŁUKASIEWICZ
Research Network PORT-Polish Center for Technology Development, 54-066 Wrocław, Poland
- Department
of Semiconductor Materials Engineering, Faculty of Fundamental Problems
of Technology, Wrocław University
of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Makhsud I. Saidaminov
- Department
of Chemistry, University of Victoria, 3800 Finnerty Road, Victoria, British Columbia V8P 5C2, Canada
- Department
of Electrical & Computer Engineering, University of Victoria, 3800 Finnerty Road, Victoria, British Columbia V8P 5C2, Canada
- Centre for
Advanced Materials and Related Technologies (CAMTEC), University of Victoria, 3800 Finnerty Road, Victoria, British Columbia V8P 5C2, Canada
| | - Ahmed L. Abdelhady
- ŁUKASIEWICZ
Research Network PORT-Polish Center for Technology Development, 54-066 Wrocław, Poland
- Department
of Chemistry, Khalifa University, P.O. Box 127788, Abu Dhabi, United Arab Emirates
- Advanced
Materials Chemistry Center (AMCC), Khalifa
University, P.O. Box 127788, Abu Dhabi, United Arab Emirates
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5
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Mrowiński P, Holewa P, Sakanas A, Sęk G, Semenova E, Syperek M. Optimization of heterogeneously integrated InP-Si on-chip photonic components. Opt Express 2023; 31:1541-1556. [PMID: 36785187 DOI: 10.1364/oe.474259] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/29/2022] [Accepted: 12/12/2022] [Indexed: 06/18/2023]
Abstract
We demonstrate comprehensive numerical studies on a hybrid III-V/Si-based waveguide system, serving as a platform for efficient light coupling between an integrated III-V quantum dot emitter to an on-chip quantum photonic integrated circuit defined on a silicon substrate. We propose a platform consisting of a hybrid InP/Si waveguide and an InP-embedded InAs quantum dot, emitting at the telecom C-band near 1550 nm. The platform can be fabricated using existing semiconductor processing technologies. Our numerical studies reveal nearly 87% of the optical field transfer efficiency between geometrically-optimized InP/Si and Si waveguides, considering propagating field along a tapered geometry. The coupling efficiency of a directional dipole emission to the hybrid InP/Si waveguide is evaluated to ∼38%, which results in more than 33% of the total on-chip optical field transfer efficiency from the dipole to the Si waveguide. We also consider the off-chip outcoupling efficiency of the propagating photon field along the Si waveguide by examining the normal to the chip plane and in-plane outcoupling configurations. In the former case, the outcoupling amounts to ∼26% when using the circular Bragg grating outcoupler design. In the latter case, the efficiency reaches up to 8%. Finally, we conclude that the conceptual device's performance is weakly susceptible to the transferred photon wavelength, offering a broadband operation within the 1.5-1.6 µm spectral range.
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6
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Syperek M, Stühler R, Consiglio A, Holewa P, Wyborski P, Dusanowski Ł, Reis F, Höfling S, Thomale R, Hanke W, Claessen R, Di Sante D, Schneider C. Observation of room temperature excitons in an atomically thin topological insulator. Nat Commun 2022; 13:6313. [PMID: 36274087 PMCID: PMC9588767 DOI: 10.1038/s41467-022-33822-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/05/2022] [Accepted: 10/04/2022] [Indexed: 11/23/2022] Open
Abstract
Optical spectroscopy of ultimately thin materials has significantly enhanced our understanding of collective excitations in low-dimensional semiconductors. This is particularly reflected by the rich physics of excitons in atomically thin crystals which uniquely arises from the interplay of strong Coulomb correlation, spin-orbit coupling (SOC), and lattice geometry. Here we extend the field by reporting the observation of room temperature excitons in a material of non-trivial global topology. We study the fundamental optical excitation spectrum of a single layer of bismuth atoms epitaxially grown on a SiC substrate (hereafter bismuthene or Bi/SiC) which has been established as a large-gap, two-dimensional (2D) quantum spin Hall (QSH) insulator. Strongly developed optical resonances are observed to emerge around the direct gap at the K and K’ points of the Brillouin zone, indicating the formation of bound excitons with considerable oscillator strength. These experimental findings are corroborated, concerning both the character of the excitonic resonances as well as their energy scale, by ab-initio GW and Bethe-Salpeter equation calculations, confirming strong Coulomb interaction effects in these optical excitations. Our observations provide evidence of excitons in a 2D QSH insulator at room temperature, with excitonic and topological physics deriving from the very same electronic structure. Here, the authors report the observation of room temperature excitons in a single layer of bismuth atoms epitaxially grown on a SiC substrate - a material of non-trivial global topology - with excitonic and topological physics deriving from the very same electronic structure.
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7
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Holewa P, Sakanas A, Gür UM, Mrowiński P, Huck A, Wang BY, Musiał A, Yvind K, Gregersen N, Syperek M, Semenova E. Bright Quantum Dot Single-Photon Emitters at Telecom Bands Heterogeneously Integrated on Si. ACS Photonics 2022; 9:2273-2279. [PMID: 35880068 PMCID: PMC9306001 DOI: 10.1021/acsphotonics.2c00027] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Whereas the Si photonic platform is highly attractive for scalable optical quantum information processing, it lacks practical solutions for efficient photon generation. Self-assembled semiconductor quantum dots (QDs) efficiently emit photons in the telecom bands (1460-1625 nm) and allow for heterogeneous integration with Si. In this work, we report on a novel, robust, and industry-compatible approach for achieving single-photon emission from InAs/InP QDs heterogeneously integrated with a Si substrate. As a proof of concept, we demonstrate a simple vertical emitting device, employing a metallic mirror beneath the QD emitter, and experimentally obtained photon extraction efficiencies of ∼10%. Nevertheless, the figures of merit of our structures are comparable with values previously only achieved for QDs emitting at shorter wavelength or by applying technically demanding fabrication processes. Our architecture and the simple fabrication procedure allows for the demonstration of high-purity single-photon generation with a second-order correlation function at zero time delay, g (2)(τ = 0) < 0.02, without any corrections at continuous wave excitation at the liquid helium temperature and preserved up to 50 K. For pulsed excitation, we achieve the as-measured g (2)(0) down to 0.205 ± 0.020 (0.114 ± 0.020 with background coincidences subtracted).
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Affiliation(s)
- Paweł Holewa
- Laboratory
for Optical Spectroscopy of Nanostructures, Faculty of Fundamental
Problems of Technology, Department of Experimental Physics, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370 Wrocław, Poland
- DTU
Fotonik, Technical University of Denmark, Kongens Lyngby 2800, Denmark
| | - Aurimas Sakanas
- DTU
Fotonik, Technical University of Denmark, Kongens Lyngby 2800, Denmark
| | - Ugur M. Gür
- DTU
Electrical Engineering, Technical University
of Denmark, Kongens Lyngby 2800, Denmark
| | - Paweł Mrowiński
- Laboratory
for Optical Spectroscopy of Nanostructures, Faculty of Fundamental
Problems of Technology, Department of Experimental Physics, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Alexander Huck
- Center
for Macroscopic Quantum States (bigQ), Department of Physics, Technical University of Denmark, Kongens Lyngby 2800, Denmark
| | - Bi-Ying Wang
- DTU
Fotonik, Technical University of Denmark, Kongens Lyngby 2800, Denmark
- Hefei
National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Anna Musiał
- Laboratory
for Optical Spectroscopy of Nanostructures, Faculty of Fundamental
Problems of Technology, Department of Experimental Physics, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Kresten Yvind
- DTU
Fotonik, Technical University of Denmark, Kongens Lyngby 2800, Denmark
- NanoPhoton-Center
for Nanophotonics, Technical University
of Denmark, Kongens Lyngby 2800, Denmark
| | - Niels Gregersen
- DTU
Fotonik, Technical University of Denmark, Kongens Lyngby 2800, Denmark
| | - Marcin Syperek
- Laboratory
for Optical Spectroscopy of Nanostructures, Faculty of Fundamental
Problems of Technology, Department of Experimental Physics, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Elizaveta Semenova
- DTU
Fotonik, Technical University of Denmark, Kongens Lyngby 2800, Denmark
- NanoPhoton-Center
for Nanophotonics, Technical University
of Denmark, Kongens Lyngby 2800, Denmark
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8
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Pieczarka M, Biegańska D, Schneider C, Höfling S, Klembt S, Sęk G, Syperek M. Crossover from exciton-polariton condensation to photon lasing in an optical trap. Opt Express 2022; 30:17070-17079. [PMID: 36221537 DOI: 10.1364/oe.452918] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/03/2022] [Accepted: 04/12/2022] [Indexed: 06/16/2023]
Abstract
Optical trapping has been proven to be an effective method of separating exciton-polariton condensates from the incoherent high-energy excitonic reservoir located at the pumping laser position. This technique has significantly improved the coherent properties of exciton-polariton condensates, when compared to a quasi-homogeneous spot excitation scheme. Here, we compare two experimental methods on a sample, where a single spot excitation experiment allowed us only to observe photonic lasing in the weak coupling regime. In contrast, the ring-shaped excitation resulted in the two-threshold behavior, where an exciton-polariton condensate manifests itself at the first and photon lasing at the second threshold. Both lasing regimes are trapped in an optical potential created by the pump. We interpret the origin of this confining potential in terms of repulsive interactions of polaritons with the reservoir at the first threshold and as a result of the excessive free-carrier induced refractive index change of the microcavity at the second threshold. This observation offers a way to achieve multiple phases of photonic condensates in samples, e.g., containing novel materials as an active layer, where two-threshold behavior is impossible to achieve with a single excitation spot.
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9
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Biegańska D, Pieczarka M, Estrecho E, Steger M, Snoke DW, West K, Pfeiffer LN, Syperek M, Truscott AG, Ostrovskaya EA. Collective Excitations of Exciton-Polariton Condensates in a Synthetic Gauge Field. Phys Rev Lett 2021; 127:185301. [PMID: 34767383 DOI: 10.1103/physrevlett.127.185301] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/03/2020] [Revised: 07/24/2021] [Accepted: 09/21/2021] [Indexed: 06/13/2023]
Abstract
Collective (elementary) excitations of quantum bosonic condensates, including condensates of exciton polaritons in semiconductor microcavities, are a sensitive probe of interparticle interactions. In anisotropic microcavities with momentum-dependent transverse-electric-transverse-magnetic splitting of the optical modes, the excitations' dispersions are predicted to be strongly anisotropic, which is a consequence of the synthetic magnetic gauge field of the cavity, as well as the interplay between different interaction strengths for polaritons in the singlet and triplet spin configurations. Here, by directly measuring the dispersion of the collective excitations in a high-density optically trapped exciton-polariton condensate, we observe excellent agreement with the theoretical predictions for spinor polariton excitations. We extract the interaction constants for polaritons of the same and opposite spin and map out the characteristic spin textures in an interacting spinor condensate of exciton polaritons.
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Affiliation(s)
- D Biegańska
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies and Nonlinear Physics Centre, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
- Department of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - M Pieczarka
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies and Nonlinear Physics Centre, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
- Department of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - E Estrecho
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies and Nonlinear Physics Centre, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - M Steger
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, USA
| | - D W Snoke
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, USA
| | - K West
- Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
| | - L N Pfeiffer
- Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
| | - M Syperek
- Department of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - A G Truscott
- Laser Physics Centre, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - E A Ostrovskaya
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies and Nonlinear Physics Centre, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
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10
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Rudno-Rudziński W, Syperek M, Andrzejewski J, Rogowicz E, Eisenstein G, Bauer S, Sichkovskyi VI, Reithmaier JP, Sęk G. Carrier transfer efficiency and its influence on emission properties of telecom wavelength InP-based quantum dot - quantum well structures. Sci Rep 2018; 8:12317. [PMID: 30120329 PMCID: PMC6098019 DOI: 10.1038/s41598-018-30950-4] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/02/2018] [Accepted: 08/08/2018] [Indexed: 11/30/2022] Open
Abstract
We investigate a hybrid system containing an In0.53Ga0.47As quantum well (QW), separated by a thin 2 nm In0.53Ga0.23Al0.24As barrier from 1.55 µm emitting InAs quantum dots (QDs), grown by molecular beam epitaxy on an InP substrate. Photoreflectance and photoluminescence (PL) spectroscopies are used to identify optical transitions in the system, with support of 8-band kp modelling. The main part of the work constitute the measurements and analysis of thermal quenching of PL for a set of samples with different QW widths (3–6 nm). Basing on Arrhenius plots, carrier escape channels from the dots are identified, pointing at the importance of carrier escape into the QW. A simple two level rate equations model is proposed and solved, exhibiting qualitative agreement with experimental observations. We show that for a narrow QW the escape process is less efficient than carrier supply via the QW due to the narrow barrier, resulting in improved emission intensity at room temperature. It proves that with carefully designed energy level structure, a hybrid QW/QD system can be used as an active region in telecom lasers with improved efficiencies.
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Affiliation(s)
- Wojciech Rudno-Rudziński
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, St. Wyspiańskiego 27, 50-370, Wrocław, Poland.
| | - Marcin Syperek
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, St. Wyspiańskiego 27, 50-370, Wrocław, Poland
| | - Janusz Andrzejewski
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, St. Wyspiańskiego 27, 50-370, Wrocław, Poland
| | - Ernest Rogowicz
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, St. Wyspiańskiego 27, 50-370, Wrocław, Poland
| | - Gadi Eisenstein
- Department of Electrical Engineering and Russell Berrie Nanotechnology Institute, Technion-Israel Institute of Technology, Haifa, 32000, Israel
| | - Sven Bauer
- Technische Physik, Institute of Nanostructure Technology and Analytics, CINSaT, University of Kassel, Heinrich Plett-Str. 40, D-34132, Kassel, Germany
| | - Vitalii I Sichkovskyi
- Technische Physik, Institute of Nanostructure Technology and Analytics, CINSaT, University of Kassel, Heinrich Plett-Str. 40, D-34132, Kassel, Germany
| | - Johann P Reithmaier
- Technische Physik, Institute of Nanostructure Technology and Analytics, CINSaT, University of Kassel, Heinrich Plett-Str. 40, D-34132, Kassel, Germany
| | - Grzegorz Sęk
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, St. Wyspiańskiego 27, 50-370, Wrocław, Poland
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11
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Pieczarka M, Syperek M, Dusanowski Ł, Misiewicz J, Langer F, Forchel A, Kamp M, Schneider C, Höfling S, Kavokin A, Sęk G. Ghost Branch Photoluminescence From a Polariton Fluid Under Nonresonant Excitation. Phys Rev Lett 2015; 115:186401. [PMID: 26565478 DOI: 10.1103/physrevlett.115.186401] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/23/2015] [Indexed: 06/05/2023]
Abstract
An expanding polariton condensate is investigated under pulsed nonresonant excitation with a small laser pump spot. Far above the condensation threshold we observe a pronounced increase in the dispersion curvature, with a subsequent linearization of the spectrum and strong luminescence from a ghost branch orthogonally polarized with respect to the linearly polarized condensate emission. Polarization of both branches is understood in terms of spin-dependent polariton-polariton scattering. The presence of the ghost branch has been confirmed in time-resolved measurements. The effects of disorder and dissipation in the photoluminescence of polariton condensates and their excitations are discussed.
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Affiliation(s)
- Maciej Pieczarka
- Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Marcin Syperek
- Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Łukasz Dusanowski
- Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Jan Misiewicz
- Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Fabian Langer
- Technische Physik, University of Würzburg and Wilhelm-Conrad-Röntgen-Research Center for Complex Material Systems (RCCM), Am Hubland, D-97074 Würzburg, Germany
| | - Alfred Forchel
- Technische Physik, University of Würzburg and Wilhelm-Conrad-Röntgen-Research Center for Complex Material Systems (RCCM), Am Hubland, D-97074 Würzburg, Germany
| | - Martin Kamp
- Technische Physik, University of Würzburg and Wilhelm-Conrad-Röntgen-Research Center for Complex Material Systems (RCCM), Am Hubland, D-97074 Würzburg, Germany
| | - Christian Schneider
- Technische Physik, University of Würzburg and Wilhelm-Conrad-Röntgen-Research Center for Complex Material Systems (RCCM), Am Hubland, D-97074 Würzburg, Germany
| | - Sven Höfling
- Technische Physik, University of Würzburg and Wilhelm-Conrad-Röntgen-Research Center for Complex Material Systems (RCCM), Am Hubland, D-97074 Würzburg, Germany
- SUPA, School of Physics and Astronomy, University of St. Andrews, St. Andrews KY16 9SS, United Kingdom
| | - Alexey Kavokin
- Spin Optics Laboratory, Saint Petersburg State University, 1 Ulianovskaya, 198504 St. Petersburg, Russia
- Physics and Astronomy School, University of Southampton, Highfield, Southampton SO17 1BJ, United Kingdom
| | - Grzegorz Sęk
- Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
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Baranowski M, Kudrawiec R, Syperek M, Misiewicz J, Sarmiento T, Harris JS. Time-resolved photoluminescence studies of annealed 1.3-μm GaInNAsSb quantum wells. Nanoscale Res Lett 2014; 9:81. [PMID: 24533740 PMCID: PMC3942105 DOI: 10.1186/1556-276x-9-81] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/14/2013] [Accepted: 02/03/2014] [Indexed: 06/03/2023]
Abstract
Time-resolved photoluminescence (PL) was applied to study the dynamics of carrier recombination in GaInNAsSb quantum wells (QWs) emitting near 1.3 μm and annealed at various temperatures. It was observed that the annealing temperature has a strong influence on the PL decay time, and hence, it influences the optical quality of GaInNAsSb QWs. At low temperatures, the PL decay time exhibits energy dependence (i.e., the decay times change for different energies of emitted photons), which can be explained by the presence of localized states. This energy dependence of PL decay times was fitted by a phenomenological formula, and the average value of E0, which describes the energy distribution of localized states, was extracted from this fit and found to be smallest (E0 = 6 meV) for the QW annealed at 700°C. In addition, the value of PL decay time at the peak energy was compared for all samples. The longest PL decay time (600 ps) was observed for the sample annealed at 700°C. It means that based on the PL dynamics, the optimal annealing temperature for this QW is approximately 700°C.
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Affiliation(s)
- Michal Baranowski
- Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, Wroclaw 50-370, Poland
| | - Robert Kudrawiec
- Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, Wroclaw 50-370, Poland
| | - Marcin Syperek
- Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, Wroclaw 50-370, Poland
| | - Jan Misiewicz
- Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, Wroclaw 50-370, Poland
| | - Tomas Sarmiento
- Solid State and Photonics Laboratory, Stanford University, Stanford, CA 94305-4075, USA
| | - James S Harris
- Solid State and Photonics Laboratory, Stanford University, Stanford, CA 94305-4075, USA
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Baranowski M, Kudrawiec R, Latkowska M, Syperek M, Misiewicz J, Sarmiento T, Harris JS. Enhancement of photoluminescence from GaInNAsSb quantum wells upon annealing: improvement of material quality and carrier collection by the quantum well. J Phys Condens Matter 2013; 25:065801. [PMID: 23306016 DOI: 10.1088/0953-8984/25/6/065801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2023]
Abstract
In this study we apply time resolved photoluminescence and contactless electroreflectance to study the carrier collection efficiency of a GaInNAsSb/GaAs quantum well (QW). We show that the enhancement of photoluminescence from GaInNAsSb quantum wells annealed at different temperatures originates not only from (i) the improvement of the optical quality of the GaInNAsSb material (i.e., removal of point defects, which are the source of nonradiative recombination) but it is also affected by (ii) the improvement of carrier collection by the QW region. The total PL efficiency is the product of these two factors, for which the optimal annealing temperatures are found to be ~700 °C and ~760 °C, respectively, whereas the optimal annealing temperature for the integrated PL intensity is found to be between the two temperatures and equals ~720 °C. We connect the variation of the carrier collection efficiency with the modification of the band bending conditions in the investigated structure due to the Fermi level shift in the GaInNAsSb layer after annealing.
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Affiliation(s)
- M Baranowski
- Institute of Physics, Wroclaw University of Technology, Wroclaw, Poland.
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Baranowski M, Syperek M, Kudrawiec R, Misiewicz J, Gupta JA, Wu X, Wang R. Carrier dynamics in type-II GaAsSb/GaAs quantum wells. J Phys Condens Matter 2012; 24:185801. [PMID: 22481185 DOI: 10.1088/0953-8984/24/18/185801] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
Time-resolved photoluminescence (PL) characteristics of type-II GaAsSb/GaAs quantum wells are presented. The PL kinetics are determined by the dynamic band bending effect and the distribution of localized centers below the quantum well band gap. The dynamic band bending results from the spatially separated electron and hole distribution functions evolving in time. It strongly depends on the optical pump power density and causes temporal renormalization of the quantum well ground-state energy occurring a few nanoseconds after the optical pulse excitation. Moreover, it alters the optical transition oscillator strength. The measured PL lifetime is 4.5 ns. We point out the critical role of the charge transfer processes between the quantum well and localized centers, which accelerate the quantum well photoluminescence decay at low temperature. However, at elevated temperatures the thermally activated back transfer process slows down the quantum well photoluminescence kinetics. A three-level rate equation model is proposed to explain these observations.
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Affiliation(s)
- M Baranowski
- Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland.
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15
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Akhtar J, Afzaal M, Banski M, Podhorodecki A, Syperek M, Misiewicz J, Bangert U, Hardman SJO, Graham DM, Flavell WR, Binks DJ, Gardonio S, O’Brien P. Controlled Synthesis of Tuned Bandgap Nanodimensional Alloys of PbSxSe1−x. J Am Chem Soc 2011; 133:5602-9. [DOI: 10.1021/ja200750s] [Citation(s) in RCA: 55] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Affiliation(s)
- Javeed Akhtar
- School of Chemistry and Materials Science Centre, The University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
| | - Mohammad Afzaal
- Center of Research Excellence in Renewable Energy, King Fahd University of Petroleum and Minerals, Dhahran, 31261 Saudi Arabia
| | - Mateusz Banski
- Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland
| | - Artur Podhorodecki
- Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland
| | - Marcin Syperek
- Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland
| | - Jan Misiewicz
- Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland
| | - Ursel Bangert
- Materials Science Centre, The University of Manchester, Grosvenor Street, Manchester M1 7HS, United Kingdom
| | - Samantha J. O. Hardman
- School of Physics and Astronomy and the Photon Science Institute, The University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
| | - Darren M. Graham
- School of Physics and Astronomy and the Photon Science Institute, The University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
| | - Wendy R. Flavell
- School of Physics and Astronomy and the Photon Science Institute, The University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
| | - David J. Binks
- School of Physics and Astronomy and the Photon Science Institute, The University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
| | - Sandra Gardonio
- SuperESCA beamline, Sincrotrone Trieste S.C.p.A., S.S. 14 Km 163.5, 34012 Basovizza, Trieste, Italy
| | - Paul O’Brien
- School of Chemistry and Materials Science Centre, The University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom
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16
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Syperek M, Yakovlev DR, Greilich A, Misiewicz J, Bayer M, Reuter D, Wieck AD. Spin coherence of holes in GaAs/(Al,Ga)As quantum wells. Phys Rev Lett 2007; 99:187401. [PMID: 17995436 DOI: 10.1103/physrevlett.99.187401] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/05/2007] [Indexed: 05/25/2023]
Abstract
Carrier spin coherence in a p-doped GaAs/(Al,Ga)As quantum well with a diluted hole gas is studied by picosecond pump-probe Kerr rotation. For resonant optical excitation of the positively charged exciton the spin precession shows two types of oscillations: Electron spin beats decaying with the charged exciton radiative lifetime of 50 ps, and long-lived hole spin beats with dephasing times up to 650 ps, which decrease with increasing temperature, underlining the importance of hole localization. The mechanism of hole spin coherence generation is discussed.
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Affiliation(s)
- M Syperek
- Experimentelle Physik II, Universität Dortmund, D-44221 Dortmund, Germany
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