1
|
Holewa P, Vajner DA, Zięba-Ostój E, Wasiluk M, Gaál B, Sakanas A, Burakowski M, Mrowiński P, Krajnik B, Xiong M, Yvind K, Gregersen N, Musiał A, Huck A, Heindel T, Syperek M, Semenova E. High-throughput quantum photonic devices emitting indistinguishable photons in the telecom C-band. Nat Commun 2024; 15:3358. [PMID: 38637520 PMCID: PMC11026509 DOI: 10.1038/s41467-024-47551-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/25/2023] [Accepted: 04/05/2024] [Indexed: 04/20/2024] Open
Abstract
Single indistinguishable photons at telecom C-band wavelengths are essential for quantum networks and the future quantum internet. However, high-throughput technology for single-photon generation at 1550 nm remained a missing building block to overcome present limitations in quantum communication and information technologies. Here, we demonstrate the high-throughput fabrication of quantum-photonic integrated devices operating at C-band wavelengths based on epitaxial semiconductor quantum dots. Our technique enables the deterministic integration of single pre-selected quantum emitters into microcavities based on circular Bragg gratings. Respective devices feature the triggered generation of single photons with ultra-high purity and record-high photon indistinguishability. Further improvements in yield and coherence properties will pave the way for implementing single-photon non-linear devices and advanced quantum networks at telecom wavelengths.
Collapse
Affiliation(s)
- Paweł Holewa
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370, Wrocław, Poland.
- DTU Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark, Ørsteds Plads 343, DK-2800, Kongens Lyngby, Denmark.
- NanoPhoton - Center for Nanophotonics, Technical University of Denmark, Ørsteds Plads 345A, DK-2800, Kongens Lyngby, Denmark.
| | - Daniel A Vajner
- Institute of Solid State Physics, Technische Universität Berlin, 10623, Berlin, Germany
| | - Emilia Zięba-Ostój
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370, Wrocław, Poland
| | - Maja Wasiluk
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370, Wrocław, Poland
| | - Benedek Gaál
- DTU Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark, Ørsteds Plads 343, DK-2800, Kongens Lyngby, Denmark
| | - Aurimas Sakanas
- DTU Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark, Ørsteds Plads 343, DK-2800, Kongens Lyngby, Denmark
| | - Marek Burakowski
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370, Wrocław, Poland
| | - Paweł Mrowiński
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370, Wrocław, Poland
| | - Bartosz Krajnik
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370, Wrocław, Poland
| | - Meng Xiong
- DTU Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark, Ørsteds Plads 343, DK-2800, Kongens Lyngby, Denmark
- NanoPhoton - Center for Nanophotonics, Technical University of Denmark, Ørsteds Plads 345A, DK-2800, Kongens Lyngby, Denmark
| | - Kresten Yvind
- DTU Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark, Ørsteds Plads 343, DK-2800, Kongens Lyngby, Denmark
- NanoPhoton - Center for Nanophotonics, Technical University of Denmark, Ørsteds Plads 345A, DK-2800, Kongens Lyngby, Denmark
| | - Niels Gregersen
- DTU Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark, Ørsteds Plads 343, DK-2800, Kongens Lyngby, Denmark
| | - Anna Musiał
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370, Wrocław, Poland
| | - Alexander Huck
- Center for Macroscopic Quantum States (bigQ), Department of Physics, Technical University of Denmark, DK-2800, Kongens Lyngby, Denmark
| | - Tobias Heindel
- Institute of Solid State Physics, Technische Universität Berlin, 10623, Berlin, Germany
| | - Marcin Syperek
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370, Wrocław, Poland.
| | - Elizaveta Semenova
- DTU Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark, Ørsteds Plads 343, DK-2800, Kongens Lyngby, Denmark.
- NanoPhoton - Center for Nanophotonics, Technical University of Denmark, Ørsteds Plads 345A, DK-2800, Kongens Lyngby, Denmark.
| |
Collapse
|
2
|
Burakowski M, Holewa P, Mrowiński P, Sakanas A, Musiał A, Sȩk G, Yvind K, Semenova E, Syperek M. Heterogeneous integration of single InAs/InP quantum dots with the SOI chip using direct bonding. Opt Express 2024; 32:10874-10886. [PMID: 38570950 DOI: 10.1364/oe.515223] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/08/2023] [Accepted: 02/09/2024] [Indexed: 04/05/2024]
Abstract
Quantum information processing with photons in small-footprint and highly integrated silicon-based photonic chips requires incorporating non-classical light sources. In this respect, self-assembled III-V semiconductor quantum dots (QDs) are an attractive solution, however, they must be combined with the silicon platform. Here, by utilizing the large-area direct bonding technique, we demonstrate the hybridization of InP and SOI chips, which allows for coupling single photons to the SOI chip interior, offering cost-effective scalability in setting up a multi-source environment for quantum photonic chips. We fabricate devices consisting of self-assembled InAs QDs embedded in the tapered InP waveguide (WG) positioned over the SOI-defined Si WG. Focusing on devices generating light in the telecom C-band compatible with the low-loss optical fiber networks, we demonstrate the light coupling between InP and SOI platforms by observing photons outcoupled at the InP-made circular Bragg grating outcoupler fabricated at the end of an 80 µm-long Si WG, and at the cleaved edge of the Si WG. Finally, for a device with suppressed multi-photon generation events exhibiting 80% single photon generation purity, we measure the photon number outcoupled at the cleaved facet of the Si WG. We estimate the directional on-chip photon coupling between the source and the Si WG to 5.1%.
Collapse
|
3
|
Vajner D, Holewa P, Zięba-Ostój E, Wasiluk M, von Helversen M, Sakanas A, Huck A, Yvind K, Gregersen N, Musiał A, Syperek M, Semenova E, Heindel T. On-Demand Generation of Indistinguishable Photons in the Telecom C-Band Using Quantum Dot Devices. ACS Photonics 2024; 11:339-347. [PMID: 38405394 PMCID: PMC10885198 DOI: 10.1021/acsphotonics.3c00973] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/11/2023] [Revised: 12/22/2023] [Accepted: 12/26/2023] [Indexed: 02/27/2024]
Abstract
Semiconductor quantum dots (QDs) enable the generation of single and entangled photons, which are useful for various applications in photonic quantum technologies. Specifically for quantum communication via fiber-optical networks, operation in the telecom C-band centered around 1550 nm is ideal. The direct generation of QD-photons in this spectral range with high quantum-optical quality, however, remained challenging. Here, we demonstrate the coherent on-demand generation of indistinguishable photons in the telecom C-band from single QD devices consisting of InAs/InP QD-mesa structures heterogeneously integrated with a metallic reflector on a silicon wafer. Using pulsed two-photon resonant excitation of the biexciton-exciton radiative cascade, we observe Rabi rotations up to pulse areas of 4π and a high single-photon purity in terms of g(2)(0) = 0.005(1) and 0.015(1) for exciton and biexciton photons, respectively. Applying two independent experimental methods, based on fitting Rabi rotations in the emission intensity and performing photon cross-correlation measurements, we consistently obtain preparation fidelities at the π-pulse exceeding 80%. Finally, performing Hong-Ou-Mandel-type two-photon interference experiments, we obtain a photon-indistinguishability of the full photon wave packet of up to 35(3)%, representing a significant advancement in the photon-indistinguishability of single photons emitted directly in the telecom C-band.
Collapse
Affiliation(s)
- Daniel
A. Vajner
- Institute
of Solid State Physics, Technical University
of Berlin, 10623 Berlin, Germany
| | - Paweł Holewa
- Department
of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370 Wrocław, Poland
- DTU
Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark, Kongens Lyngby 2800, Denmark
- NanoPhoton
− Center for Nanophotonics, Technical
University of Denmark, 2800 Kongens Lyngby, Denmark
| | - Emilia Zięba-Ostój
- Department
of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Maja Wasiluk
- Department
of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Martin von Helversen
- Institute
of Solid State Physics, Technical University
of Berlin, 10623 Berlin, Germany
| | - Aurimas Sakanas
- DTU
Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark, Kongens Lyngby 2800, Denmark
| | - Alexander Huck
- Center
for Macroscopic Quantum States (bigQ), Department of Physics, Technical University of Denmark, 2800 Kongens Lyngby, Denmark
| | - Kresten Yvind
- DTU
Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark, Kongens Lyngby 2800, Denmark
- NanoPhoton
− Center for Nanophotonics, Technical
University of Denmark, 2800 Kongens Lyngby, Denmark
| | - Niels Gregersen
- DTU
Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark, Kongens Lyngby 2800, Denmark
| | - Anna Musiał
- Department
of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Marcin Syperek
- Department
of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Elizaveta Semenova
- DTU
Electro, Department of Electrical and Photonics Engineering, Technical University of Denmark, Kongens Lyngby 2800, Denmark
- NanoPhoton
− Center for Nanophotonics, Technical
University of Denmark, 2800 Kongens Lyngby, Denmark
| | - Tobias Heindel
- Institute
of Solid State Physics, Technical University
of Berlin, 10623 Berlin, Germany
| |
Collapse
|
4
|
Dong G, Xiong M, Dimopoulos E, Sakanas A, Semenova E, Yvind K, Yu Y, Mørk J. Experimental demonstration of a nanobeam Fano laser. Opt Express 2024; 32:5242-5251. [PMID: 38439256 DOI: 10.1364/oe.511425] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/10/2023] [Accepted: 01/16/2024] [Indexed: 03/06/2024]
Abstract
Microscopic single-mode lasers with low power consumption, large modulation bandwidth, and ultra-narrow linewidth are essential for numerous applications, such as on-chip photonic networks. A recently demonstrated microlaser using an optical Fano resonance between a discrete mode and a continuum of modes to form one of the mirrors, i.e., the so-called Fano laser, holds great promise for meeting these requirements. Here, we suggest and experimentally demonstrate what we believe is a new configuration of the Fano laser based on a nanobeam geometry. Compared to the conventional two-dimensional photonic crystal geometry, the nanobeam structure makes it easier to engineer the phase-matching condition that facilitates the realization of a bound-state-in-the-continuum (BIC). We investigate the laser threshold in two scenarios based on the new nanobeam geometry. In the first, classical case, the gain is spatially located in the part of the cavity that supports a continuum of modes. In the second case, instead, the gain is located in the region that supports a discrete mode. We find that the laser threshold for the second case can be significantly reduced compared to the conventional Fano laser. These results pave the way for the practical realization of high-performance microlasers.
Collapse
|
5
|
Mrowiński P, Holewa P, Sakanas A, Sęk G, Semenova E, Syperek M. Optimization of heterogeneously integrated InP-Si on-chip photonic components. Opt Express 2023; 31:1541-1556. [PMID: 36785187 DOI: 10.1364/oe.474259] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/29/2022] [Accepted: 12/12/2022] [Indexed: 06/18/2023]
Abstract
We demonstrate comprehensive numerical studies on a hybrid III-V/Si-based waveguide system, serving as a platform for efficient light coupling between an integrated III-V quantum dot emitter to an on-chip quantum photonic integrated circuit defined on a silicon substrate. We propose a platform consisting of a hybrid InP/Si waveguide and an InP-embedded InAs quantum dot, emitting at the telecom C-band near 1550 nm. The platform can be fabricated using existing semiconductor processing technologies. Our numerical studies reveal nearly 87% of the optical field transfer efficiency between geometrically-optimized InP/Si and Si waveguides, considering propagating field along a tapered geometry. The coupling efficiency of a directional dipole emission to the hybrid InP/Si waveguide is evaluated to ∼38%, which results in more than 33% of the total on-chip optical field transfer efficiency from the dipole to the Si waveguide. We also consider the off-chip outcoupling efficiency of the propagating photon field along the Si waveguide by examining the normal to the chip plane and in-plane outcoupling configurations. In the former case, the outcoupling amounts to ∼26% when using the circular Bragg grating outcoupler design. In the latter case, the efficiency reaches up to 8%. Finally, we conclude that the conceptual device's performance is weakly susceptible to the transferred photon wavelength, offering a broadband operation within the 1.5-1.6 µm spectral range.
Collapse
|
6
|
Holewa P, Sakanas A, Gür UM, Mrowiński P, Huck A, Wang BY, Musiał A, Yvind K, Gregersen N, Syperek M, Semenova E. Bright Quantum Dot Single-Photon Emitters at Telecom Bands Heterogeneously Integrated on Si. ACS Photonics 2022; 9:2273-2279. [PMID: 35880068 PMCID: PMC9306001 DOI: 10.1021/acsphotonics.2c00027] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Whereas the Si photonic platform is highly attractive for scalable optical quantum information processing, it lacks practical solutions for efficient photon generation. Self-assembled semiconductor quantum dots (QDs) efficiently emit photons in the telecom bands (1460-1625 nm) and allow for heterogeneous integration with Si. In this work, we report on a novel, robust, and industry-compatible approach for achieving single-photon emission from InAs/InP QDs heterogeneously integrated with a Si substrate. As a proof of concept, we demonstrate a simple vertical emitting device, employing a metallic mirror beneath the QD emitter, and experimentally obtained photon extraction efficiencies of ∼10%. Nevertheless, the figures of merit of our structures are comparable with values previously only achieved for QDs emitting at shorter wavelength or by applying technically demanding fabrication processes. Our architecture and the simple fabrication procedure allows for the demonstration of high-purity single-photon generation with a second-order correlation function at zero time delay, g (2)(τ = 0) < 0.02, without any corrections at continuous wave excitation at the liquid helium temperature and preserved up to 50 K. For pulsed excitation, we achieve the as-measured g (2)(0) down to 0.205 ± 0.020 (0.114 ± 0.020 with background coincidences subtracted).
Collapse
Affiliation(s)
- Paweł Holewa
- Laboratory
for Optical Spectroscopy of Nanostructures, Faculty of Fundamental
Problems of Technology, Department of Experimental Physics, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370 Wrocław, Poland
- DTU
Fotonik, Technical University of Denmark, Kongens Lyngby 2800, Denmark
| | - Aurimas Sakanas
- DTU
Fotonik, Technical University of Denmark, Kongens Lyngby 2800, Denmark
| | - Ugur M. Gür
- DTU
Electrical Engineering, Technical University
of Denmark, Kongens Lyngby 2800, Denmark
| | - Paweł Mrowiński
- Laboratory
for Optical Spectroscopy of Nanostructures, Faculty of Fundamental
Problems of Technology, Department of Experimental Physics, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Alexander Huck
- Center
for Macroscopic Quantum States (bigQ), Department of Physics, Technical University of Denmark, Kongens Lyngby 2800, Denmark
| | - Bi-Ying Wang
- DTU
Fotonik, Technical University of Denmark, Kongens Lyngby 2800, Denmark
- Hefei
National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Anna Musiał
- Laboratory
for Optical Spectroscopy of Nanostructures, Faculty of Fundamental
Problems of Technology, Department of Experimental Physics, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Kresten Yvind
- DTU
Fotonik, Technical University of Denmark, Kongens Lyngby 2800, Denmark
- NanoPhoton-Center
for Nanophotonics, Technical University
of Denmark, Kongens Lyngby 2800, Denmark
| | - Niels Gregersen
- DTU
Fotonik, Technical University of Denmark, Kongens Lyngby 2800, Denmark
| | - Marcin Syperek
- Laboratory
for Optical Spectroscopy of Nanostructures, Faculty of Fundamental
Problems of Technology, Department of Experimental Physics, Wrocław University of Science and Technology, Wyb. Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Elizaveta Semenova
- DTU
Fotonik, Technical University of Denmark, Kongens Lyngby 2800, Denmark
- NanoPhoton-Center
for Nanophotonics, Technical University
of Denmark, Kongens Lyngby 2800, Denmark
| |
Collapse
|