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Li X, Wan J, Tang Y, Wang C, Zhang Y, Lv D, Guo M, Ma Y, Yang Y. Boosting the UV-vis-NIR Photodetection Performance of MoS 2 through the Cavity Enhancement Effect and Bulk Heterojunction Strategy. ACS APPLIED MATERIALS & INTERFACES 2024; 16:29003-29015. [PMID: 38788155 DOI: 10.1021/acsami.4c01823] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2024]
Abstract
Navigating more effective methods to enhance the photon utilization of photodetectors poses a significant challenge. This study initially investigates the impact of morphological alterations in 2H-MoS2 on photodetector (PD) performance. The results reveal that compared to layered MoS2 (MoS2 NLs), MoS2 nanotubes (MoS2 NTs) impart a cavity enhancement effect through multiple light reflections. This structural feature significantly enhances the photodetection performance of the MoS2-based PDs. We further employ the heterojunction strategy to construct Y-TiOPc NPs:MoS2 NTs, utilizing Y-TiOPc NPs (Y-type titanylphthalocyanine) as the vis-NIR photosensitizer and MoS2 NTs as the photon absorption enhancer. This approach not only addresses the weak absorption of MoS2 NTs in the near-infrared region but also enhances carrier generation, separation, and transport efficiency. Additionally, the band bending phenomenon induced by trapped-electrons at the interface between ITO and the photoactive layer significantly enhances the hole tunneling injection capability from the external circuit. By leveraging the synergistic effects of the aforementioned strategies, the PD based on Y-TiOPc NPs:MoS2 NTs (Y:MT-PD) exhibits superior photodetection performance in the wavelength range of 365-940 nm compared to MoS2 NLs-based PD and MoS2 NTs-based PD. Particularly noteworthy are the peak values of key metrics for Y:MT-PD, such as EQE, R, and D* that are 4947.6%, 20588 mA/W, and 1.94 × 1012 Jones, respectively. The multiperiod time-resolved photocurrent response curves of Y:MT-PD also surpass those of the other two PDs, displaying rapid, stable, and reproducible responses across all wavelengths. This study provides valuable insights for the further development of photoactive materials with a high photon utilization efficiency.
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Affiliation(s)
- Xiaolong Li
- College of Chemistry and Chemical Engineering, Shaanxi University of Science and Technology, Xi'an 710021, China
- Shaanxi Key Laboratory of Chemical Additives for Industry, Shaanxi University of Science and Technology, Xi'an 710021, China
| | - Jundi Wan
- College of Chemistry and Chemical Engineering, Shaanxi University of Science and Technology, Xi'an 710021, China
- Shaanxi Key Laboratory of Chemical Additives for Industry, Shaanxi University of Science and Technology, Xi'an 710021, China
| | - Yulu Tang
- College of Chemistry and Chemical Engineering, Shaanxi University of Science and Technology, Xi'an 710021, China
- Shaanxi Key Laboratory of Chemical Additives for Industry, Shaanxi University of Science and Technology, Xi'an 710021, China
| | - Chenyu Wang
- College of Chemistry and Chemical Engineering, Shaanxi University of Science and Technology, Xi'an 710021, China
- Shaanxi Key Laboratory of Chemical Additives for Industry, Shaanxi University of Science and Technology, Xi'an 710021, China
| | - Yahui Zhang
- College of Chemistry and Chemical Engineering, Shaanxi University of Science and Technology, Xi'an 710021, China
- Shaanxi Key Laboratory of Chemical Additives for Industry, Shaanxi University of Science and Technology, Xi'an 710021, China
| | - Dongjun Lv
- Department of Chemical Engineering, School of Chemistry and Chemical Engineering, De Zhou University, Dezhou 253023, China
| | - Mingyuan Guo
- College of Chemistry and Materials Science, Weinan Normal University, Weinan 714099, China
| | - Yongning Ma
- College of Chemistry and Chemical Engineering, Shaanxi University of Science and Technology, Xi'an 710021, China
- Shaanxi Key Laboratory of Chemical Additives for Industry, Shaanxi University of Science and Technology, Xi'an 710021, China
| | - Yuhao Yang
- College of Chemistry and Chemical Engineering, Shaanxi University of Science and Technology, Xi'an 710021, China
- Shaanxi Key Laboratory of Chemical Additives for Industry, Shaanxi University of Science and Technology, Xi'an 710021, China
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2
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Zhou N, Dang Z, Li H, Sun Z, Deng S, Li J, Li X, Bai X, Xie Y, Li L, Zhai T. Low-Symmetry 2D t-InTe for Polarization-Sensitive UV-Vis-NIR Photodetection. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2400311. [PMID: 38804863 DOI: 10.1002/smll.202400311] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/13/2024] [Revised: 03/23/2024] [Indexed: 05/29/2024]
Abstract
Polarization-sensitive photodetection grounded on low-symmetry 2D materials has immense potential in improving detection accuracy, realizing intelligent detection, and enabling multidimensional visual perception, which has promising application prospects in bio-identification, optical communications, near-infrared imaging, radar, military, and security. However, the majority of the reported polarized photodetection are limited by UV-vis response range and low anisotropic photoresponsivity factor, limiting the achievement of high-performance anisotropic photodetection. Herein, 2D t-InTe crystal is introduced into anisotropic systems and developed to realize broadband-response and high-anisotropy-ratio polarized photodetection. Stemming from its narrow band gap and intrinsic low-symmetry lattice characteristic, 2D t-InTe-based photodetector exhibits a UV-vis-NIR broadband photoresponse and significant photoresponsivity anisotropy behavior, with an exceptional in-plane anisotropic factor of 1.81@808 nm laser, surpassing the performance of most reported 2D counterparts. This work expounds the anisotropic structure-activity relationship of 2D t-InTe crystal, and identifies 2D t-InTe as a prospective candidate for high-performance polarization-sensitive optoelectronics, laying the foundation for future multifunctional device applications.
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Affiliation(s)
- Nan Zhou
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
- Guangzhou Institute of Technology, Xidian University, Guangzhou, 710068, P. R. China
| | - Ziwei Dang
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
| | - Haoran Li
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
| | - Zongdong Sun
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Shijie Deng
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
| | - Junhao Li
- Institute of Information Sensing, Xidian University, Xi'an, 710126, P. R. China
| | - Xiaobo Li
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
- Guangzhou Institute of Technology, Xidian University, Guangzhou, 710068, P. R. China
| | - Xiaoxia Bai
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
| | - Yong Xie
- Shaanxi Joint Key Laboratory of Graphene, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710126, P. R. China
| | - Liang Li
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
- Optics Valley Laboratory, Hubei, 430074, P. R. China
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3
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Cao F, Liu Y, Liu M, Han Z, Xu X, Fan Q, Sun B. Wide Bandgap Semiconductors for Ultraviolet Photodetectors: Approaches, Applications, and Prospects. RESEARCH (WASHINGTON, D.C.) 2024; 7:0385. [PMID: 38803505 PMCID: PMC11128649 DOI: 10.34133/research.0385] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/20/2024] [Accepted: 04/21/2024] [Indexed: 05/29/2024]
Abstract
Ultraviolet (UV) light, invisible to the human eye, possesses both benefits and risks. To harness its potential, UV photodetectors (PDs) have been engineered. These devices can convert UV photons into detectable signals, such as electrical impulses or visible light, enabling their application in diverse fields like environmental monitoring, healthcare, and aerospace. Wide bandgap semiconductors, with their high-efficiency UV light absorption and stable opto-electronic properties, stand out as ideal materials for UV PDs. This review comprehensively summarizes recent advancements in both traditional and emerging wide bandgap-based UV PDs, highlighting their roles in UV imaging, communication, and alarming. Moreover, it examines methods employed to enhance UV PD performance, delving into the advantages, challenges, and future research prospects in this area. By doing so, this review aims to spark innovation and guide the future development and application of UV PDs.
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Affiliation(s)
- Fa Cao
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
| | - Ying Liu
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
| | - Mei Liu
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
| | - Zeyao Han
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
| | - Xiaobao Xu
- School of Electronic Science and Engineering,
Southeast University, Nanjing 210000, P. R. China
| | - Quli Fan
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
| | - Bin Sun
- State Key Laboratory of Organic Electronics and Information Displays,
Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunication (NJUPT), Nanjing210023, P. R. China
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4
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Sharma M, Mazumder N, Ajayan PM, Deb P. Quantum enhanced efficiency and spectral performance of paper-based flexible photodetectors functionalized with two dimensional materials. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:283001. [PMID: 38574668 DOI: 10.1088/1361-648x/ad3abf] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/10/2023] [Accepted: 04/04/2024] [Indexed: 04/06/2024]
Abstract
Flexible photodetectors (PDs) have exotic significance in recent years due to their enchanting potential in future optoelectronics. Moreover, paper-based fabricated PDs with outstanding flexibility unlock new avenues for future wearable electronics. Such PD has captured scientific interest for its efficient photoresponse properties due to the extraordinary assets like significant absorptive efficiency, surface morphology, material composition, affordability, bendability, and biodegradability. Quantum-confined materials harness the unique quantum-enhanced properties and hold immense promise for advancing both fundamental scientific understanding and practical implication. Two-dimensional (2D) materials as quantum materials have been one of the most extensively researched materials owing to their significant light absorption efficiency, increased carrier mobility, and tunable band gaps. In addition, 2D heterostructures can trap charge carriers at their interfaces, leading increase in photocurrent and photoconductivity. This review represents comprehensive discussion on recent developments in such PDs functionalized by 2D materials, highlighting charge transfer mechanism at their interface. This review thoroughly explains the mechanism behind the enhanced performance of quantum materials across a spectrum of figure of merits including external quantum efficiency, detectivity, spectral responsivity, optical gain, response time, and noise equivalent power. The present review studies the intricate mechanisms that reinforce these improvements, shedding light on the intricacies of quantum materials and their significant capabilities. Moreover, a detailed analysis of the technical applicability of paper-based PDs has been discussed with challenges and future trends, providing comprehensive insights into their practical usage in the field of future wearable and portable electronic technologies.
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Affiliation(s)
- Monika Sharma
- Advanced Functional Material Laboratory (AFML), Department of Physics, Tezpur University, (Central University), Tezpur 784028, India
| | - Nirmal Mazumder
- Manipal School of Life Sciences, Manipal Academy of Higher Education, Manipal, Karnataka 576104, India
| | - Pulickel M Ajayan
- Department of Materials Science and Nano Engineering, Rice University, Houston, TX 77005, United States of America
| | - Pritam Deb
- Advanced Functional Material Laboratory (AFML), Department of Physics, Tezpur University, (Central University), Tezpur 784028, India
- Manipal School of Life Sciences, Manipal Academy of Higher Education, Manipal, Karnataka 576104, India
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5
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Debnath S, Meyyappan M, Giri PK. Printed MoSe 2/GaAs Photodetector Enabling Ultrafast and Broadband Photodetection up to 1.5 μm. ACS APPLIED MATERIALS & INTERFACES 2024; 16:9039-9050. [PMID: 38324453 DOI: 10.1021/acsami.3c17477] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/09/2024]
Abstract
The development of high-performance and low-cost photodetectors (PDs) capable of detecting a broad range of wavelengths, from ultraviolet (UV) to near-infrared (NIR), is crucial for applications in sensing, imaging, and communication systems. This work presents a novel approach for printing a broadband PD based on a heterostructure of two-dimensional (2D) molybdenum diselenide (MoSe2) and gallium arsenide (GaAs). The fabrication process involves a precise technique to print MoSe2 nanoflower (NF) ink onto a prepatterned GaAs substrate. The resulting heterostructure exhibits unique properties, leveraging the exceptional electronic and optical characteristics of both GaAs and 2D MoSe2. The fabricated PD achieves an astounding on-off ratio of ∼105 at 5 V bias while demonstrating an exceptional on-off ratio of ∼104 at 0 V. The depletion region between GaAs and MoSe2 facilitates efficient charge generation and separation and collection of photogenerated carriers. This significantly improves the performance of the PD, resulting in a notably high responsivity across the spectrum. The peak responsivity of the device is 5.25 A/W at 5 V bias under 808 nm laser excitation, which is more than an order of magnitude higher than that of any commercial NIR PDs. Furthermore, the device demonstrates an exceptional responsivity of 0.36 A/W under an external bias of 0 V. The printing technology used here offers several advantages including simplicity, scalability, and compatibility with large-scale production. Additionally, it enables precise control over the placement and integration of the MoSe2 NF onto the GaAs substrate, ensuring uniformity and reliability in device performance. The exceptional responsivity across a broad spectral range (360-1550 nm) and the success of the printing technique make our MoSe2/GaAs heterostructure PD promising for future low-cost and efficient optoelectronic devices.
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Affiliation(s)
- Subhankar Debnath
- Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781039, India
| | - M Meyyappan
- Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati 781039, India
| | - P K Giri
- Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781039, India
- Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati 781039, India
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6
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Chen T, Zhang X, Zhang L, Zeng C, Li S, Yang A, Hu Y, Li B, Jiang M, Huang Z, Li Y, Guo G, Fan Y, Shi W, Cai Y, Zeng Z, Zhang B. High-Speed and Ultrasensitive Solar-Blind Ultraviolet Photodetectors Based on In Situ Grown β-Ga 2O 3 Single-Crystal Films. ACS APPLIED MATERIALS & INTERFACES 2024; 16:6068-6077. [PMID: 38258520 DOI: 10.1021/acsami.3c15561] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/24/2024]
Abstract
Deep-level defects in β-Ga2O3 that worsen the response speed and dark current (Id) of photodetectors (PDs) have been a long-standing issue for its application. Herein, an in situ grown single-crystal Ga2O3 nanoparticle seed layer (NPSL) was used to shorten the response time and reduce the Id of metal-semiconductor-metal (MSM) PDs. With the NPSL, the Id was reduced by 4 magnitudes from 0.389 μA to 81.03 pA, and the decay time (τd1/τd2) decreased from 258/1690 to 62/142 μs at -5 V. In addition, the PDs with the NPSL also exhibit a high responsivity (43.5 A W-1), high specific detectivity (2.81 × 1014 Jones), and large linear dynamic range (61 dB) under 254 nm illumination. The mechanism behind the performance improvement can be attributed to the suppression of the deep-level defects (i.e., self-trapped holes) and increase of the Schottky barrier. The barrier height extracted is increased by 0.18 eV compared with the case without the NPSL. Our work contributes to understanding the relationship between defects and the performance of PDs based on heteroepitaxial β-Ga2O3 thin films and provides an important reference for the development of high-speed and ultrasensitive deep ultraviolet PDs.
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Affiliation(s)
- Tiwei Chen
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, 230026 Hefei, China
- Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
| | - Xiaodong Zhang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, 230026 Hefei, China
- Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
| | - Li Zhang
- Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
| | - Chunhong Zeng
- Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
| | - Shaojuan Li
- State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin 130033, China
| | - An Yang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, 230026 Hefei, China
| | - Yu Hu
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, 230026 Hefei, China
| | - Botong Li
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, 230026 Hefei, China
| | - Ming Jiang
- Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
| | - Zijing Huang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, 230026 Hefei, China
| | - Yifei Li
- Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
| | - Gaofu Guo
- Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
| | - Yaming Fan
- Nanchang Nano-Devices and Technologies Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Nanchang 330200, China
| | - Wenhua Shi
- Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
| | - Yong Cai
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, 230026 Hefei, China
| | - Zhongming Zeng
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, 230026 Hefei, China
- Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
- Nanchang Nano-Devices and Technologies Division, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Nanchang 330200, China
| | - Baoshun Zhang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, 230026 Hefei, China
- Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
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7
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Bach TPA, Cho S, Kim H, Nguyen DA, Im H. 2D van der Waals Heterostructure with Tellurene Floating-Gate for Wide Range and Multi-Bit Optoelectronic Memory. ACS NANO 2024; 18:4131-4139. [PMID: 38206068 DOI: 10.1021/acsnano.3c08567] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/12/2024]
Abstract
Intensive research on optoelectronic memory (OEM) devices based on two-dimensional (2D) van der Waals heterostructures (vdWhs) is being conducted due to their distinctive advantages for electrical-optical writing and multilevel storage. These features make OEM a promising candidate for the logic of reconfigurable operations. However, the realization of nonvolatile OEM with broadband absorption (from visible to infrared) and a high switching ratio remains challenging. Herein, we report a nonvolatile OEM based on a heterostructure consisting of rhenium disulfide (ReS2), hexagonal boron nitride (hBN) and tellurene (2D Te). The 2D Te-based floating-gate (FG) device exhibits excellent performance metrics, including a high switching on/off ratio (∼106), significant endurance (>1000 cycles) and impressive retention (>104 s). In addition, the narrow band gap of 2D Te endows the device with broadband optical programmability from the visible to near-infrared regions at room temperature. Moreover, by applying different gate voltages, light wavelengths, and laser powers, multiple bits can be successfully generated. Additionally, the device is specifically designed to enable reconfigurable inverter logic circuits (including AND and OR gates) through controlled electrical and optical inputs. These significant findings demonstrate that the 2D vdWhs with a 2D Te FG are a valuable approach in the development of high-performance OEM devices.
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Affiliation(s)
- Thi Phuong Anh Bach
- Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Republic of Korea
| | - Sangeun Cho
- Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Republic of Korea
| | - Hyungsang Kim
- Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Republic of Korea
| | - Duc Anh Nguyen
- Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Republic of Korea
| | - Hyunsik Im
- Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Republic of Korea
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8
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Panda J, Sahu S, Haider G, Thakur MK, Mosina K, Velický M, Vejpravova J, Sofer Z, Kalbáč M. Polarization-Resolved Position-Sensitive Self-Powered Binary Photodetection in Multilayer Janus CrSBr. ACS APPLIED MATERIALS & INTERFACES 2024; 16:1033-1043. [PMID: 38147583 PMCID: PMC10788859 DOI: 10.1021/acsami.3c13552] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/11/2023] [Revised: 12/10/2023] [Accepted: 12/10/2023] [Indexed: 12/28/2023]
Abstract
Recent progress in polarization-resolved photodetection based on low-symmetry 2D materials has formed the basis of cutting-edge optoelectronic devices, including quantum optical communication, 3D image processing, and sensing applications. Here, we report an optical polarization-resolving photodetector (PD) fabricated from multilayer semiconducting CrSBr single crystals with high structural anisotropy. We have demonstrated self-powered photodetection due to the formation of Schottky junctions at the Au-CrSBr interfaces, which also caused the photocurrent to display a position-sensitive and binary nature. The self-biased CrSBr PD showed a photoresponsivity of ∼0.26 mA/W with a detectivity of 3.4 × 108 Jones at 514 nm excitation of fluency (0.42 mW/cm2) under ambient conditions. The optical polarization-induced photoresponse exhibits a large dichroic ratio of 3.4, while the polarization is set along the a- and the b-axes of single-crystalline CrSBr. The PD also showed excellent stability, retaining >95% of the initial photoresponsivity in ambient conditions for more than five months without encapsulation. Thus, we demonstrate CrSBr as a fascinating material for ultralow-powered optical polarization-resolving optoelectronic devices for cutting-edge technology.
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Affiliation(s)
- Jaganandha Panda
- J.
Heyrovský Institute of Physical Chemistry, Dolejskova 3, 182 23 Prague 8, Czech Republic
| | - Satyam Sahu
- J.
Heyrovský Institute of Physical Chemistry, Dolejskova 3, 182 23 Prague 8, Czech Republic
- Department
of Biophysics, Chemical and Macromolecular Physics, Faculty of Mathematics
and Physics, Charles University, Ke Karlovu 3, 121 16 Prague 2, Czech Republic
| | - Golam Haider
- J.
Heyrovský Institute of Physical Chemistry, Dolejskova 3, 182 23 Prague 8, Czech Republic
| | - Mukesh Kumar Thakur
- J.
Heyrovský Institute of Physical Chemistry, Dolejskova 3, 182 23 Prague 8, Czech Republic
| | - Kseniia Mosina
- Department
of Inorganic Chemistry, University of Chemistry
and Technology Prague, Technicka 5, 166 28 Prague 6, Czech Republic
| | - Matěj Velický
- J.
Heyrovský Institute of Physical Chemistry, Dolejskova 3, 182 23 Prague 8, Czech Republic
| | - Jana Vejpravova
- Department
of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, 121 16 Prague 2, Czech Republic
| | - Zdeněk Sofer
- Department
of Inorganic Chemistry, University of Chemistry
and Technology Prague, Technicka 5, 166 28 Prague 6, Czech Republic
| | - Martin Kalbáč
- J.
Heyrovský Institute of Physical Chemistry, Dolejskova 3, 182 23 Prague 8, Czech Republic
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9
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Xu Z, Xu M, Chen F, Zhai R, Wu Y, Zhao Z, Pan S. Ultrahigh UV Responsivity Quasi-Two-Dimensional Bi xSn 1-xO 2 Films Achieved through Surface Reaction. MATERIALS (BASEL, SWITZERLAND) 2023; 16:6988. [PMID: 37959584 PMCID: PMC10648401 DOI: 10.3390/ma16216988] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/18/2023] [Revised: 10/18/2023] [Accepted: 10/26/2023] [Indexed: 11/15/2023]
Abstract
In this study, quasi-two-dimensional BixSn1-xO2 (BTO) thin films were fabricated using a liquid metal transfer method. The ultraviolet (UV) photodetector based on BTO thin films was constructed, and the ultrahigh responsivity of 589 A/W was observed at 300 nm UV light illumination. Interestingly, by dropping ethanol during light-off period, the recovery time induced by the persistent photoconductivity (PPC) effect is reduced from 1.65 × 103 s to 5.71 s. Furthermore, the recovery time can also be reduced by dropping methanol, propylene glycol, NaNO2, and Na2SO3 after light termination. The working mechanisms are attributed to the rapid consumption of holes stored in BTO thin films by reaction with those solutions. This work demonstrates that the BTO thin films have potential applications in high-performance UV detectors and present an innovation route to weaken the PPC effects in semiconductors by introducing chemical liquids on their surface.
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Affiliation(s)
- Zhihao Xu
- School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, China; (Z.X.); (M.X.); (F.C.); (R.Z.); (Y.W.)
- Research Center for Advanced Information Materials (CAIM), Huangpu Research and Graduate School of Guangzhou University, Guangzhou 510006, China
| | - Miao Xu
- School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, China; (Z.X.); (M.X.); (F.C.); (R.Z.); (Y.W.)
- Research Center for Advanced Information Materials (CAIM), Huangpu Research and Graduate School of Guangzhou University, Guangzhou 510006, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Fang Chen
- School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, China; (Z.X.); (M.X.); (F.C.); (R.Z.); (Y.W.)
- Research Center for Advanced Information Materials (CAIM), Huangpu Research and Graduate School of Guangzhou University, Guangzhou 510006, China
| | - Rui Zhai
- School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, China; (Z.X.); (M.X.); (F.C.); (R.Z.); (Y.W.)
- Research Center for Advanced Information Materials (CAIM), Huangpu Research and Graduate School of Guangzhou University, Guangzhou 510006, China
| | - You Wu
- School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, China; (Z.X.); (M.X.); (F.C.); (R.Z.); (Y.W.)
- Research Center for Advanced Information Materials (CAIM), Huangpu Research and Graduate School of Guangzhou University, Guangzhou 510006, China
| | - Zhuan Zhao
- School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, China; (Z.X.); (M.X.); (F.C.); (R.Z.); (Y.W.)
- Research Center for Advanced Information Materials (CAIM), Huangpu Research and Graduate School of Guangzhou University, Guangzhou 510006, China
- Key Lab of Si-Based Information Materials & Devices and Integrated Circuits Design, Department of Education of Guangdong Province, Guangzhou 510006, China
| | - Shusheng Pan
- School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, China; (Z.X.); (M.X.); (F.C.); (R.Z.); (Y.W.)
- Research Center for Advanced Information Materials (CAIM), Huangpu Research and Graduate School of Guangzhou University, Guangzhou 510006, China
- Key Lab of Si-Based Information Materials & Devices and Integrated Circuits Design, Department of Education of Guangdong Province, Guangzhou 510006, China
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10
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Shlapa Y, Siposova K, Veltruska K, Maraloiu VA, Garcarova I, Rajnak M, Musatov A, Belous A. Design of Magnetic Fe 3O 4/CeO 2 "Core/Shell"-Like Nanocomposites with Pronounced Antiamyloidogenic and Antioxidant Bioactivity. ACS APPLIED MATERIALS & INTERFACES 2023; 15:49346-49361. [PMID: 37826912 DOI: 10.1021/acsami.3c10845] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/14/2023]
Abstract
"Core/shell" nanocomposites based on magnetic magnetite (Fe3O4) and redox-active cerium dioxide (CeO2) nanoparticles (NPs) are promising in the field of biomedical interests because they can combine the ability of magnetic NPs to heat up in an alternating magnetic field (AMF) with the pronounced antioxidant activity of CeO2 NPs. Thus, this report is devoted to Fe3O4/CeO2 nanocomposites (NCPs) synthesized by precipitation of the computed amount of "CeO2-shell" on the surface of prefabricated Fe3O4 NPs. The X-ray diffraction, X-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy data validated the formation of Fe3O4/CeO2 "core/shell"-like NCPs, in which ultrafine CeO2 NPs with an average size of approximately 3-3.5 nm neatly surround Fe3O4 NPs. The presence of a CeO2 "shell" significantly increased the stability of Fe3O4/CeO2 NCPs in aqueous suspensions: Fe3O4/CeO2 NCPs with "shell thicknesses" of 5 and 7 nm formed highly stable magnetic fluids with ζ-potential values of >+30 mV. The magnetization values of Fe3O4/CeO2 NCPs decreased with a growing CeO2 "shell" around the magnetic NPs; however, the resulting composites retained the ability to heat efficiently in an AMF. The presence of a CeO2 "shell" generates a possibility to precisely regulate tuning of the maximum heating temperature of magnetic NCPs in the 42-50 °C range and stabilize it after a certain time of exposure to an AMF by changing the thickness of the "CeO2-shell". A great improvement was observed in both antioxidant and antiamyloidogenic activities. It was found that inhibition of insulin amyloid formation, expressed in IC50 concentration, using NCPs with a "shell thickness" of 7 nm was approximately 10 times lower compared to that of pure CeO2. For these NCPs, more than 2 times higher superoxide dismutase-like activity was observed. The coupling of both Fe3O4 and CeO2 results in higher bioactivity than either of them individually, probably due to a synergistic catalytic mechanism.
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Affiliation(s)
- Yuliia Shlapa
- V. I. Vernadsky Institute of General and Inorganic Chemistry of the National Academy of Sciences of Ukraine, 32/34 Palladina Avenue, Kyiv 03142, Ukraine
| | - Katarina Siposova
- Institute of Experimental Physics, Slovak Academy of Sciences, Watsonova 47, Kosice 04001, Slovakia
| | - Katerina Veltruska
- Department of Surface and Plasma Science, Faculty of Mathematics and Physics, Charles University, V. Holesovickach 2, Prague 8 18000, Czech Republic
| | | | - Ivana Garcarova
- Institute of Experimental Physics, Slovak Academy of Sciences, Watsonova 47, Kosice 04001, Slovakia
| | - Michal Rajnak
- Institute of Experimental Physics, Slovak Academy of Sciences, Watsonova 47, Kosice 04001, Slovakia
| | - Andrey Musatov
- Institute of Experimental Physics, Slovak Academy of Sciences, Watsonova 47, Kosice 04001, Slovakia
| | - Anatolii Belous
- V. I. Vernadsky Institute of General and Inorganic Chemistry of the National Academy of Sciences of Ukraine, 32/34 Palladina Avenue, Kyiv 03142, Ukraine
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11
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Tran MH, Nguyen TMH, Bark CW. Toward Industrial Production of a High-Performance Self-Powered Ultraviolet Photodetector Using Nanoporous Al-Doped ZnO Thin Films. ACS OMEGA 2023; 8:35343-35350. [PMID: 37779960 PMCID: PMC10536242 DOI: 10.1021/acsomega.3c05266] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/21/2023] [Accepted: 09/01/2023] [Indexed: 10/03/2023]
Abstract
Al-doped ZnO (AZO) thin films are effective n-type semiconductors for ultraviolet (UV) detection because of their low cost, high electron mobility, and high sensitivity to UV light, especially in the UVA spectrum. However, a reasonable compromise between performance (such as sensitivity, detectivity, and response time) and fabrication ease remains an obstacle to the practicability of AZO-based UV photodetectors. To address this issue, we propose an efficient strategy to achieve a large AZO photoactive area for outstanding performance, along with a facile sol-gel method. Consequently, the device exhibits a superb on/off ratio of >104, a high detectivity of 1.85 × 1012 Jones, and a fast response speed under 365 nm UVA illumination without external energy consumption. Hence, this study suggests a self-powered and high-performance nanoporous AZO-based UVA detector with an environmentally friendly scalable process that satisfies industrial production requirements for numerous practical UV-detection applications.
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Affiliation(s)
- Manh Hoang Tran
- Department of Electrical
Engineering, Gachon University, 1342 Seongnam-daero, Sujeong-gu, Seongnam-si, Gyeonggi-do 13120, South Korea
| | - Thi My Huyen Nguyen
- Department of Electrical
Engineering, Gachon University, 1342 Seongnam-daero, Sujeong-gu, Seongnam-si, Gyeonggi-do 13120, South Korea
| | - Chung Wung Bark
- Department of Electrical
Engineering, Gachon University, 1342 Seongnam-daero, Sujeong-gu, Seongnam-si, Gyeonggi-do 13120, South Korea
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12
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Han S, Sun R, Zhao L, Yan C, Chu H. Molecularly imprinted electrochemical sensor based on synergistic interaction of honeycomb-like Ni-MOF decorated with AgNPs and N-GQDs for ultra-sensitive detection of olaquindox in animal-origin food. Food Chem 2023; 418:136001. [PMID: 36989645 DOI: 10.1016/j.foodchem.2023.136001] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/19/2022] [Revised: 03/11/2023] [Accepted: 03/19/2023] [Indexed: 03/29/2023]
Abstract
Olaquindox (OLA) in food from its illegal use possesses great harmful effects on humans, making it important to develop sensitive, inexpensive, and convenient methods for OLA detection. This study innovatively presented a molecularly imprinted electrochemical sensor based on the synergistic effects of nitrogen-doped graphene quantum dots (N-GQDs) and a nickel-based metal-organic framework functionalized with silver nanoparticles (Ag/Ni-MOF) for OLA detection. N-GQDs and Ag/Ni-MOF with unique honeycomb structures were sequentially modified on the glassy carbon electrode (GCE) surface to accelerate the electron transfer rate and increase the available region of the electrode. Molecularly imprinted polymers were further grown on the Ag/Ni-MOF/N-GQDs/GCE by electropolymerization to significantly enhance the selective recognition of OLA. The constructed sensor showed excellent performance for selective OLA determination, with a wide linear range (5-600 nmol·L-1) and exceedingly low detection limit (2.2 nmol·L-1). The sensor was successfully applied to detect OLA in animal-origin food with satisfactory recoveries (96.22-101.02%).
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Affiliation(s)
- Shuang Han
- College of Chemistry and Chemical Engineering, Qiqihar University, Qiqihar 161006, China; Heilongjiang Provincial Key Laboratory of Catalytic Synthesis for Fine Chemicals, Qiqihar University, Qiqihar 161006, China.
| | - Ruonan Sun
- College of Chemistry and Chemical Engineering, Qiqihar University, Qiqihar 161006, China
| | - Le Zhao
- College of Chemistry and Chemical Engineering, Qiqihar University, Qiqihar 161006, China
| | - Chen Yan
- College of Chemistry and Chemical Engineering, Qiqihar University, Qiqihar 161006, China
| | - Hongtao Chu
- College of Chemistry and Chemical Engineering, Qiqihar University, Qiqihar 161006, China
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13
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Fu M, Dou H, Zhai W, Hou B, Wu C, Meng W, Wu N, Zhang Z, Weng TC, Yu Y, Wang HT. Enhancing UV-C Photoelectron Lifetimes for Avalanche-like Photocurrents in Carbon-Doped Bi 3O 4Cl Nanosheets. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37377206 DOI: 10.1021/acsami.3c03331] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/29/2023]
Abstract
Interlayer electric fields in two-dimensional (2D) materials create photoelectron protecting barriers useful to mitigate electron-hole recombination. However, tuning the interlayer electric field remains challenging. Here, carbon-doped Bi3O4Cl (C:Bi3O4Cl) nanosheets are synthesized using a gas phase protocol, and n-type carriers are acquired as confirmed by the transconductance polarity of nanosheet field effect transistors. Thin C:Bi3O4Cl nanosheets show excellent 266 nm photodetector figures of merit, and an avalanche-like photocurrent is demonstrated. Decaying behaviors of photoelectrons pumped by a 266 nm laser pulse (266 nm photoelectrons) are observed using transient absorption spectroscopy, and a significant 266 nm photoelectron lifetime quality in C:Bi3O4Cl is presented. Built C:Bi3O4Cl models suggest that the interlayer electric field can be boosted by two different carbon substitutions at the inner and outer bismuth sites. This work reports a facile approach to increase the interlayer electric field in Bi3O4Cl for future UV-C photodetector applications.
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Affiliation(s)
- Minghui Fu
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong, Shanghai 201210, China
| | - Hongbin Dou
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong, Shanghai 201210, China
| | - Wenbo Zhai
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong, Shanghai 201210, China
| | - Bingsen Hou
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong, Shanghai 201210, China
| | - Congcong Wu
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong, Shanghai 201210, China
| | - Wei Meng
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong, Shanghai 201210, China
| | - Nan Wu
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong, Shanghai 201210, China
| | - Zhuo Zhang
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong, Shanghai 201210, China
| | - Tsu-Chien Weng
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong, Shanghai 201210, China
| | - Yi Yu
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong, Shanghai 201210, China
| | - Hung-Ta Wang
- School of Physical Science and Technology, ShanghaiTech University, 393 Middle Huaxia Road, Pudong, Shanghai 201210, China
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14
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Roy PK, Hartman T, Šturala J, Luxa J, Melle-Franco M, Sofer Z. Hydrogen-Terminated Two-Dimensional Germanane/Silicane Alloys as Self-Powered Photodetectors and Sensors. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37192133 DOI: 10.1021/acsami.3c01971] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/18/2023]
Abstract
2D monoelemental materials, particularly germanene and silicene (the single layer of germanium and silicon), which are the base materials for modern electronic devices demonstrated tremendous attraction for their 2D layer structure along with the tuneable electronics and optical band gap. The major shortcoming of synthesized thermodynamically very unstable layered germanene and silicene with their inclination toward oxidation was overcome by topochemical deintercalation of a Zintl phase (CaGe2, CaGe1.5Si0.5, and CaGeSi) in a protic environment. The exfoliated Ge-H, Ge0.75Si0.25H, and Ge0.5Si0.5H were successfully synthesized and employed as the active layer for photoelectrochemical photodetectors, which showed broad response (420-940 nm), unprecedented responsivity, and detectivity on the order of 168 μA W-1 and 3.45 × 108 cm Hz1/2 W-1, respectively. The sensing capability of exfoliated germanane and silicane composites was explored using electrochemical impedance spectroscopy with ultrafast response and recovery time of less than 1 s. These positive findings serve as the application of exfoliated germanene and silicene composites and can pave a new path to practical applications in efficient future devices.
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Affiliation(s)
- Pradip Kumar Roy
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic
| | - Tomáš Hartman
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic
| | - Jiří Šturala
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic
| | - Jan Luxa
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic
| | - Manuel Melle-Franco
- CICECO─Aveiro Institute of Materials, Department of Chemistry, University of Aveiro, 3810-193 Aveiro, Portugal
| | - Zdenek Sofer
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic
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15
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Cho HD, Lee J, Kim DY, Chung SY, Lee JK. Enhanced Photoresponse of High Crystalline Bi 2Se 3 Thin-Films Using Patterned Substrates. ACS APPLIED MATERIALS & INTERFACES 2023; 15:22274-22281. [PMID: 37115789 DOI: 10.1021/acsami.3c02501] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
High-quality Bi2Se3 thin films with topological insulating properties at room temperature have recently attracted much attention as one of the promising materials for realizing innovative electronic and optoelectronic devices. Here, we report the high crystallinity growth of Bi2Se3 thin films on a patterned sapphire substrate (PSS) by using a vapor-phase transport deposition with minimizing thermal dissociation of Se atoms vaporized in Bi2Se3 powder. This PSS not only reduces the large dislocation of heterogeneously grown Bi2Se3 on a sapphire substrate but also induces enhanced light absorption in the visible to near-infrared (IR) ranges compared to Bi2Se3 on planar sapphire substrates. Thus, the Bi2Se3 thin film laterally grown on the PSS reveals uniform surface properties and high crystallinity in the rhombohedral lattice phase with a full width at half maximum of 0.06° for the XRD (003) peak. Also, the photoresponse of the fabricated IR conversion device using Bi2Se3/PSS heterostructure exhibits excellent performance and high reliability with no degradation after continuous switching. As a result, the device constructed with the Bi2Se3/PSS exhibits one order of magnitude higher NIR induced-photocurrent and 1-2 orders of magnitude faster photo-switching than that with Bi2Se3/Al2O3. Such an enhancement in the device performance of Bi2Se3/PSS is confirmed by the increased absorption spectra in visible and NIR ranges and the improved light absorption distribution.
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Affiliation(s)
- Hak Dong Cho
- Quantum Functional Semiconductor Research Center, Dongguk University, Seoul 04620, Korea
| | - Juwon Lee
- Quantum Functional Semiconductor Research Center, Dongguk University, Seoul 04620, Korea
| | - Deuk Young Kim
- Quantum Functional Semiconductor Research Center, Dongguk University, Seoul 04620, Korea
- Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Korea
| | - Sung Yun Chung
- Division of Energy and Optical Technology Convergence, Cheongju University, Cheongju-si, Chungcheongbuk-do 28503, Korea
| | - Jong-Kwon Lee
- Division of Energy and Optical Technology Convergence, Cheongju University, Cheongju-si, Chungcheongbuk-do 28503, Korea
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16
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Kundu S, George SJ, Kulkarni GU. Fabrication of High-Performance Visible-Blind Ultraviolet Photodetectors Using Electro-ionic Conducting Supramolecular Nanofibers. ACS APPLIED MATERIALS & INTERFACES 2023; 15:19270-19278. [PMID: 36996388 DOI: 10.1021/acsami.3c00716] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
The detection of ultraviolet (UV) light is vital for various applications, such as chemical-biological analysis, communications, astronomical studies, and also for its adverse effects on human health. Organic UV photodetectors are gaining much attention in this scenario because they possess properties such as high spectral selectivity and mechanical flexibility. However, the achieved performance parameters are much more inferior than the inorganic counterparts because of the lower mobility of charge carriers in organic systems. Here, we report the fabrication of a high-performance visible-blind UV photodetector, using 1D supramolecular nanofibers. The nanofibers are visibly inactive and exhibit highly responsive behavior mainly for UV wavelengths (275-375 nm), the highest response being at ∼275 nm. The fabricated photodetectors demonstrate desired features, such as high responsivity and detectivity, high selectivity, low power consumption, and good mechanical flexibility, because of their unique electro-ionic behavior and 1D structure. The device performance is shown to be improved by several orders through the tweaking of both electronic and ionic conduction pathways while optimizing the electrode material, external humidity, applied voltage bias, and by introducing additional ions. We have achieved optimum responsivity and detectivity values of around 6265 A W-1 and 1.54 × 1014 Jones, respectively, which stand out compared with the previous organic UV photodetector reports. The present nanofiber system has great potential for integration in future generations of electronic gadgets.
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Affiliation(s)
- Suman Kundu
- Centre for Nano and Soft Matter Sciences, Shivanapura, Bengaluru 562162, India
| | - Subi J George
- Supramolecular Chemistry Laboratory, New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru 560064, India
| | - Giridhar U Kulkarni
- Centre for Nano and Soft Matter Sciences, Shivanapura, Bengaluru 562162, India
- Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru 560064, India
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17
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Lu C, Dong W, Zou Y, Wang Z, Tan J, Bai X, Ma N, Ge Y, Zhao Q, Xu X. Direct Z-Scheme SnSe 2/SnSe Heterostructure Passivated by Al 2O 3 for Highly Stable and Sensitive Photoelectrochemical Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2023; 15:6156-6168. [PMID: 36669150 DOI: 10.1021/acsami.2c19762] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
To mimic the natural photosynthesis system, a Z-scheme heterostructure is proposed as a viable and effective strategy for efficient solar energy utilization such as photocatalysis and photoelectrochemical (PEC) water splitting due to the high carrier separation efficiency, fast charge transport, strong redox, and wide light absorption. However, it remains a huge challenge to form a direct Z-scheme heterostructure due to the internal electric-field restriction and vital band-alignment at the interface. Herein, the van der Waals heterostructure based on the allotrope SnSe2 and SnSe is designed and synthesized by a two-step vapor phase deposition method to overcome the limitation in the formation of the Z-scheme heterostructure for the first time. The Z-scheme heterostructure of SnSe2/SnSe is confirmed by X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, PEC measurement, density functional theory calculations, and water splitting. Strikingly, the PEC photodetectors based on the Z-scheme heterostructure show a synergistic effect of superior stability from SnSe and fast photoresponse from SnSe2. As such, the SnSe2/SnSe Z-scheme heterostructure shows a good photodetection performance in the ultraviolet to visible wavelength range. Furthermore, the photodetector shows a faster response/recovery time of 13/14 ms, a higher photosensitivity of 529.13 μA/W, and a higher detectivity of 4.94 × 109 Jones at 475 nm compared with those of single components. Furthermore, the photodetection stability of the SnSe2/SnSe is also greatly improved by a-thin-Al2O3-layer passivation. The results imply the promising rational design of a direct Z-scheme heterostructure with efficient charge transfer for high performance of optoelectronic devices.
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Affiliation(s)
- Chunhui Lu
- Shaanxi Joint Lab of Graphene, State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon-Technology, Northwest University, Xi'an, 710069, China
| | - Wen Dong
- Shaanxi Joint Lab of Graphene, State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon-Technology, Northwest University, Xi'an, 710069, China
| | - Yongqiang Zou
- Shaanxi Joint Lab of Graphene, State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon-Technology, Northwest University, Xi'an, 710069, China
| | - Zeyun Wang
- Shaanxi Joint Lab of Graphene, State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon-Technology, Northwest University, Xi'an, 710069, China
| | - Jiayu Tan
- Shaanxi Joint Lab of Graphene, State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon-Technology, Northwest University, Xi'an, 710069, China
| | - Xing Bai
- School of Mechanical and Precision Instrument Engineering, Xi'an University of Technology, Xi'an, 710048, China
| | - Nan Ma
- Shaanxi Joint Lab of Graphene, State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon-Technology, Northwest University, Xi'an, 710069, China
| | - Yanqing Ge
- Shaanxi Joint Lab of Graphene, State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon-Technology, Northwest University, Xi'an, 710069, China
| | - Qiyi Zhao
- School of Science, Xi'an University of Posts &Telecommunications, Xi'an, 710121, China
| | - Xinlong Xu
- Shaanxi Joint Lab of Graphene, State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon-Technology, Northwest University, Xi'an, 710069, China
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18
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Xue M, Peng W, Tang X, Cai Y, Li F, He Y. Pyro-Phototronic Effect Enhanced Pyramid Structured p-Si/n-ZnO Nanowires Heterojunction Photodetector. ACS APPLIED MATERIALS & INTERFACES 2023; 15:4677-4689. [PMID: 36625530 DOI: 10.1021/acsami.2c18011] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
The emergence of nanomaterials has brought about the development of miniature photodetectors into a new stage, and ZnO nanomaterials are currently one of the most popular research objects. Here, the performance of a photodetector consisting of micropyramid structured p-Si/n-ZnO NWs heterojunction constructed by an anisotropic chemical etching and hydrothermal method is optimized by using the pyro-phototronic effect, and the photoresponses of the device to 405 and 648 nm lasers are investigated. The results show that, with the introduction of pyro-phototronic effect, the photoresponsivity Rpyro increases to 208 times that of Rphoto when the wavelength is 405 nm and the optical power density is 0.0693 mW/cm2. Moreover, with the increase of the chopper frequency, the photocurrent increases by more than 3 times, and the photoresponsivity is also increased by a factor of 4.5, making it possible to detect ultrafast pulsed light. In addition, in order to increase the current collection efficiency, a thin film Al layer was deposited as the back electrode on the basis of the device, and the photocurrent and photoresponsivity are significantly improved. Finally, the coupling between the pyro-phototronic effect and the piezo-phototronic effect is analyzed by applying compressive strain to the photodetector. When the compressive strain is -1.02%, the photocurrent decreases by 31.4% and the photoresponsivity decreases by 27.9% due to the opposite direction between laser illumination induced pyroelectric polarization charges and compressive strain induced piezoelectric polarization charges. This work not only demonstrates the great potential of pyro-phototronic effect in enhancing the silicon-based heterojunction photodetectors for high-performance photodetection and ultrafast pulsed light detection but also provides assistance for a better understanding of the coupling mechanism between pyro-phototronic and piezo-phototronic effects.
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Affiliation(s)
- Mingyan Xue
- School of Microelectronics, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
- The Key Lab of Micro-Nano Electronics and System Integration of Xi'an City, Xi'an, Shaanxi 710049, China
| | - Wenbo Peng
- School of Microelectronics, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
- The Key Lab of Micro-Nano Electronics and System Integration of Xi'an City, Xi'an, Shaanxi 710049, China
| | - Xuefeng Tang
- School of Microelectronics, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
- The Key Lab of Micro-Nano Electronics and System Integration of Xi'an City, Xi'an, Shaanxi 710049, China
| | - Yahui Cai
- School of Microelectronics, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
- The Key Lab of Micro-Nano Electronics and System Integration of Xi'an City, Xi'an, Shaanxi 710049, China
| | - Fangpei Li
- State Key Laboratory of Solidification Processing, Key Laboratory of Radiation Detection Materials and Devices, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, Shaanxi 710072, China
| | - Yongning He
- School of Microelectronics, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
- The Key Lab of Micro-Nano Electronics and System Integration of Xi'an City, Xi'an, Shaanxi 710049, China
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